Solar cell and manufacturing method therefor, photovoltaic module, and photovoltaic device

Abstract

A solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic device. The solar cell comprises a first light absorption layer, a composite layer, and a second light absorption layer which are sequentially arranged in a first direction, wherein the first direction is an incident direction of sunlight, and the composite layer comprises a first metal layer and a first metal diffusion inhibition layer arranged on at least one side of the first metal layer. According to the technical solution, the performance of the solar cell is improved.

Description

Solar cell and preparation method thereof, photovoltaic module and photovoltaic device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application No. 202310943297.4, filed on July 31, 2023, entitled “Solar cells and methods for preparing the same, photovoltaic modules and photovoltaic devices,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present application relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, a photovoltaic module and a photovoltaic device. Background Art

[0004] In recent years, global energy shortages and environmental pollution have become increasingly prominent, and solar cells, as an ideal renewable energy source, have garnered increasing attention. Solar cells, also known as photovoltaic cells, are devices that convert light energy directly into electrical energy through the photoelectric or photochemical effects. Within a few years of their development, they have rapidly achieved high photoelectric conversion efficiencies, demonstrating promising application prospects.

[0005] With the development of solar cell technology, people have higher and higher requirements on the performance of solar cells, such as efficiency and stability of solar cells. Therefore, how to improve the performance of solar cells is a technical problem that needs to be solved urgently.

[0006] Summary of the Invention

[0007] The present application is made in view of the above-mentioned problems, and its purpose is to provide a solar cell and a preparation method thereof, a photovoltaic module and a photovoltaic device to improve the performance of the solar cell.

[0008] In a first aspect, a solar cell is provided, comprising: a first light absorption layer, a composite layer, and a second light absorption layer arranged in sequence along a first direction, wherein the first direction is the incident direction of sunlight; wherein the composite layer comprises a first metal layer and a first metal diffusion inhibition layer located on at least one side of the first metal layer.

[0009] The embodiment of the present application provides a solar cell, comprising a first light absorbing layer, a composite layer, and a second light absorbing layer arranged in sequence along a first direction, the composite layer comprising a first metal layer and a first metal diffusion inhibiting layer located on at least one side of the first metal layer. In the technical solution of the present application, a first metal diffusion inhibiting layer is provided on at least one side of the first metal layer, so that on at least one side of the first metal layer, the first metal diffusion inhibiting layer separates the first metal layer from the first metal layer, and the first metal diffusion inhibiting layer prevents the metal of the first metal layer from diffusing to other film layers, thereby reducing the risk of the other film layers being reduced in function or damaged due to doping with metal materials. The permeability of the composite layer formed by the first metal layer and the first metal diffusion inhibiting layer on at least one side of the first metal layer is improved, and the structural design of the composite layer is conducive to improving the parallel resistance of the solar cell and improving the fill factor of the solar cell. Therefore, the technical solution provided by the embodiment of the present application is conducive to improving the efficiency of the solar cell.

[0010] In one possible implementation, the solar cell also includes a first electrode layer, a first carrier transport layer, a second carrier transport layer, a third carrier transport layer, a fourth carrier transport layer and a second electrode layer, wherein the first electrode layer, the first carrier transport layer, the first light absorption layer, the second carrier transport layer, the composite layer, the third carrier transport layer, the second light absorption layer, the fourth carrier transport layer and the second electrode layer are arranged in sequence along the first direction.

[0011] In the technical solution of the present application, a first metal diffusion inhibition layer is provided on at least one side of the first metal layer. Thus, on at least one side of the first metal layer, the first metal diffusion inhibition layer separates the first metal layer from the carrier transport layer. The first metal diffusion inhibition layer prevents the metal of the first metal layer from diffusing into the carrier transport layer, thereby reducing the risk of damage to the carrier transport layer.

[0012] In one possible implementation, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, and the fourth carrier transport layer is an electron transport layer. The first metal diffusion suppression layer is disposed between the third carrier transport layer and the metal layer. In other words, the first metal diffusion suppression layer is disposed on a side of the first metal layer near the hole transport layer, separating the first metal layer from the hole transport layer and reducing the risk of damage to the hole transport layer.

[0013] In a possible implementation, the thickness d1 of the first metal diffusion inhibition layer satisfies: 0.1 nm≤d1≤100 nm.

[0014] In a possible implementation, the thickness d1 of the first metal diffusion inhibition layer satisfies: 5 nm ≤ d1 ≤ 10 nm.

[0015] In a possible implementation, the thickness d2 of the first metal layer satisfies: 0.1 nm≤d2≤10 nm.

[0016] In a possible implementation, the thickness d2 of the first metal layer satisfies: 0.8 nm ≤ d2 ≤ 1.2 nm.

[0017] In a possible implementation, the thickness d of the composite layer satisfies: 1 nm≤d≤210 nm.

[0018] In a possible implementation, the thickness d of the composite layer satisfies: 10.8 nm ≤ d ≤ 21.2 nm.

[0019] In the above technical solution, the thicknesses of the first metal diffusion inhibition layer, the first metal layer and the composite layer are set within the above ranges, which is beneficial to improving the efficiency of the solar cell.

[0020] In a possible implementation, the material of the first metal layer includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and alloys thereof.

[0021] In a possible implementation, the material of the first metal layer includes at least one of gold, silver, and alloys thereof.

[0022] In a possible implementation, the material of the first metal diffusion inhibition layer includes at least one of a transparent conductive oxide and a carbon element material.

[0023] In one possible implementation, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide; and the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0024] The above-mentioned substance is used as the material of the first metal diffusion inhibition layer, covering at least one side of the first metal layer, and can reduce the risk of the material of the first metal layer diffusing into the carrier transport layer.

[0025] In one possible implementation, the material of the first electrode layer includes: a conductive oxide, and the conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide.

[0026] In the above technical solution, the material of the first electrode layer includes the above conductive oxide, which is beneficial for the solar cell to absorb sunlight.

[0027] In a possible implementation, the second electrode layer includes a second metal layer and a second metal diffusion inhibition layer, and the second metal diffusion inhibition layer is disposed between the second metal layer and the fourth carrier transport layer.

[0028] In the above technical solution, the second metal diffusion inhibition layer of the second electrode layer is arranged between the second metal layer of the second electrode layer and the fourth carrier transport layer, which can block the diffusion of the metal material in the second metal layer to the fourth carrier transport layer, thereby reducing the risk of damage to the fourth carrier transport layer.

[0029] In one possible implementation, the material of the second metal layer includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten and alloys thereof; the second metal diffusion inhibition layer includes at least one of a transparent conductive oxide and a carbon elemental material.

[0030] In one possible implementation, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide; and the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0031] The above substance is used as the material of the second metal diffusion inhibition layer and is arranged between the second metal layer and the fourth carrier transport layer, which can reduce the risk of the material of the second metal layer diffusing into the fourth carrier transport layer.

[0032] In a possible implementation, the material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor.

[0033] In a possible implementation, the material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triptycene The core of the present invention comprises triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide; the material of the electron transport layer comprises at least one of the following materials and their derivatives: bathocuproin, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide, where the value of x ranges from 1.5 to 2.

[0034] The above-mentioned materials for the hole transport layer and the materials for the electron transport layer can improve the efficiency of the solar cell.

[0035] In a possible implementation, the material of the first light absorbing layer is perovskite, and the material of the second light absorbing layer is perovskite.

[0036] Perovskite materials have the advantages of high conversion efficiency, low cost, and environmental protection. They can be prepared into very thin films and applied to solar cells, which can effectively improve the efficiency of solar cells.

[0037] In a possible implementation manner, the band gap of the material of the first light absorbing layer is greater than the band gap of the material of the second light absorbing layer.

[0038] The sunlight first irradiates the first light absorbing layer. The band gap of the material of the first light absorbing layer is set to be larger than the band gap of the material of the second light absorbing layer, which is beneficial to improving the efficiency of the solar cell.

[0039] In a possible implementation, the chemical formula of the perovskite in the first light absorbing layer and the second light absorbing layer is ABX3, wherein A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + 、Li + 、Na + , K + , Rb + 、Cs + At least one of, B includes Pb + 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CP - 、CN - 、SeCN - 、N3 - 、NO2 -In this way, it is convenient to flexibly select the specific type of perovskite according to actual needs.

[0040] In a possible implementation, the solar cell further includes a first hole blocking layer, where the first hole blocking layer is located between the first light absorbing layer and the second carrier transporting layer.

[0041] In a possible implementation, the solar cell further includes a second hole blocking layer, where the second hole blocking layer is located between the second light absorbing layer and the fourth carrier transporting layer.

[0042] In the above technical solution, a hole blocking layer is provided between the light absorbing layer and the electron transport layer, which is beneficial to improving the electron transport between the electron transport layer and the light absorbing layer, thereby improving the efficiency of the solar cell.

[0043] In a possible implementation, the material of the first hole blocking layer includes fullerene and its derivatives, SnO x At least one of the following, wherein the value range of x is 1.5 to 2.

[0044] In a possible implementation, the material of the second hole blocking layer includes fullerene and its derivatives, SnO x At least one of the following, wherein the value range of x is 1.5 to 2.

[0045] The use of the above materials for the hole blocking layer can effectively enhance the electron transport between the electron transport layer and the light absorption layer, thereby improving the efficiency of the solar cell.

[0046] In a second aspect, a method for fabricating a solar cell is provided, comprising: providing a first light-absorbing layer, a composite layer, and a second light-absorbing layer arranged in sequence along a first direction, where the first direction is the direction of incident sunlight; wherein the composite layer includes a first metal layer and a first metal diffusion inhibition layer located on at least one side of the first metal layer. The solar cell fabricated using this method has high cell efficiency.

[0047] In one possible implementation, the preparation method further includes: providing a first electrode layer, a first carrier transport layer, the first light absorption layer, a second carrier transport layer, the composite layer, a third carrier transport layer, the second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along the first direction.

[0048] In one possible implementation, the providing of a first electrode layer, a first carrier transport layer, the first light absorption layer, a second carrier transport layer, the composite layer, a third carrier transport layer, the second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along a first direction includes: providing the first electrode layer; preparing the first carrier transport layer on the first electrode layer, the first carrier transport layer being a hole transport layer; preparing the first light absorption layer on the first carrier transport layer; preparing the second carrier transport layer on the first light absorption layer, the second carrier transport layer being an electron transport layer; preparing the first metal layer on the electron transport layer, preparing the first metal diffusion inhibition layer on the metal layer to obtain the composite layer; preparing the third carrier transport layer on the composite layer, the third carrier transport layer being a hole transport layer; preparing the second light absorption layer on the third carrier transport layer; preparing the fourth carrier transport layer on the second light absorption layer, the fourth carrier transport layer being an electron transport layer; and preparing the second electrode layer on the fourth carrier transport layer.

[0049] In one possible implementation, the second electrode layer includes a second metal layer and a second metal diffusion suppression layer, and the preparing the second electrode layer on the fourth carrier transport layer includes: preparing the second metal diffusion suppression layer on the fourth carrier transport layer, and preparing the second metal layer on the second metal diffusion suppression layer to obtain the second electrode layer.

[0050] In a third aspect, a photovoltaic assembly is provided, comprising the solar cell according to the first aspect and any possible implementation thereof, and / or a solar cell manufactured according to the preparation method according to the second aspect and any possible implementation thereof.

[0051] In a fourth aspect, a photovoltaic device is provided, comprising the photovoltaic assembly in the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the drawings without creative work.

[0053] FIG1 is a schematic diagram of a solar cell according to an embodiment of the present application;

[0054] FIG2 is a schematic diagram of a solar cell according to an embodiment of the present application;

[0055] FIG3 is a schematic diagram of a solar cell according to an embodiment of the present application;

[0056] FIG4 is a schematic diagram of a solar cell according to an embodiment of the present application;

[0057] FIG5 is a schematic diagram of a method for preparing a solar cell according to an embodiment of the present application. DETAILED DESCRIPTION

[0058] The following detailed description specifically discloses the embodiments of the solar cell and its preparation method, photovoltaic module, and photovoltaic device of the present application, with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there may be cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structure are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0059] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0060] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0061] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0062] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0063] If there is no special explanation, the "include" and "comprising" mentioned in this application are open-ended. For example, the "include" and "comprising" may mean that other components not listed may also be included or comprised.

[0064] Unless otherwise specified, the term "and / or" is inclusive in this application. For example, the phrase "A and / or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0065] Solar cells have good application prospects due to their high photoelectric conversion efficiency. In solar cells, the arrangement of each film layer is crucial to the performance of the solar cell, such as stability and efficiency. For example, in order to improve the efficiency of solar cells, a composite layer is arranged between two light-absorbing layers in a stacked cell. In the prior art, a layer of 50-100nm ITO is usually prepared as a composite layer, or a layer of about 1nm of single metal is prepared as a composite layer. A single ITO as a composite layer will have a larger lateral conductivity, resulting in a decrease in the parallel resistance of the battery, and the thicker ITO has a higher parasitic absorption, resulting in a decrease in short-circuit current. Although a single single metal as a composite layer can avoid low lateral conductivity, the metal element will diffuse into the carrier transport layer and damage the carrier transport layer. The above-mentioned solutions in the prior art are not conducive to improving the efficiency of solar cells.

[0066] In view of this, an embodiment of the present application provides a solar cell, which includes a first light absorbing layer, a composite layer, and a second light absorbing layer arranged in sequence along a first direction, and the first direction is the incident direction of sunlight. The composite layer includes a first metal layer and a first metal diffusion inhibition layer located on at least one side of the first metal layer. In the technical solution of the present application, a first metal diffusion inhibition layer is provided on at least one side of the first metal layer, so that on at least one side of the first metal layer, the first metal diffusion inhibition layer separates the first metal layer from other layers, and the first metal diffusion inhibition layer prevents the metal of the first metal layer from diffusing to other film layers, thereby reducing the risk of other film layers being reduced in function or damaged due to doping with metal materials. The permeability of the composite layer formed by the first metal layer and the first metal diffusion inhibition layer on at least one side of the first metal layer is improved, and the structural design of the composite layer is conducive to improving the parallel resistance of the solar cell and improving the fill factor of the solar cell. Therefore, the technical solution provided by the embodiment of the present application is conducive to improving the efficiency of the solar cell.

[0067] [Solar Cell]

[0068] Figure 1 is a schematic diagram of a solar cell according to an embodiment of the present application. As shown in Figure 1 , the solar cell 10 includes a first light absorbing layer 103, a composite layer 105, and a second light absorbing layer 107 arranged in sequence along a first direction.

[0069] The first direction is the incident direction of sunlight. For example, as shown in FIG1 , the first direction is the x direction (the direction indicated by the arrow).

[0070] The composite layer 105 includes a first metal layer 1051 and a first metal diffusion inhibiting layer 1052 located on at least one side of the first metal layer 1051. The first metal diffusion inhibiting layer 1052 can inhibit the diffusion of metal in the first metal layer 1051, that is, it can inhibit the diffusion of metal in the first metal layer 1051 into other film layers (e.g., the first light absorbing layer 103 and / or the second light absorbing layer 107).

[0071] The first metal layer 1051 has two surfaces that are opposite to each other along its thickness direction (e.g., the x-direction as shown in FIG1 ), and the first metal diffusion inhibiting layer 1052 can be provided on at least one of the two surfaces that are opposite to each other along the thickness direction of the first metal layer 1051. For example, as shown in FIG1 , the first metal diffusion inhibiting layer 1052 is provided on both surfaces that are opposite to each other along the thickness direction of the first metal layer 1051.

[0072] Optionally, in some embodiments, a first metal diffusion suppression layer 1052 is provided on one of two surfaces of the first metal layer 1051 that are opposite to each other in the thickness direction.

[0073] A first metal diffusion suppression layer 1052 is disposed on at least one side of the first metal layer 1051, forming a composite layer 105 disposed between the second carrier transport layer 104 and the third carrier transport layer 106. Thus, on at least one side of the first metal layer 1051, the first metal diffusion suppression layer 1052 separates the first metal layer 1051 from other film layers. The first metal diffusion suppression layer 1052 prevents the metal from the first metal layer 1051 from diffusing into other film layers, thereby reducing the risk of functional degradation or damage to other film layers due to metal doping. The composite layer 105 formed by the first metal layer 1051 and the first metal diffusion suppression layer 1052 on at least one side of the first metal layer 1051 has improved permeability. The structural design of the composite layer 105 facilitates increasing the parallel resistance of the solar cell 10, thereby improving the fill factor of the solar cell 10.

[0074] The efficiency of the solar cell 10 may refer to the photoelectric conversion efficiency of the solar cell 10 , which refers to the ratio of the maximum output power of the cell when illuminated by light to the power of the incident light irradiating the cell.

[0075] The fill factor of solar cell 10 can be used to measure the photoelectric conversion efficiency of solar cell 10. Generally speaking, a larger fill factor indicates a higher photoelectric conversion efficiency. The fill factor is related to current density, which refers to the current per unit area. A larger current-carrying area indicates a higher fill factor.

[0076] The solar cell 10 provided in an embodiment of the present application includes a first light absorbing layer 103, a composite layer 105, and a second light absorbing layer 107, arranged in sequence along a first direction, where the first direction is the direction of incidence of sunlight. Furthermore, the composite layer includes a first metal layer 1051 and a first metal diffusion inhibiting layer 1052 located on at least one side of the first metal layer 1051. The first metal diffusion inhibiting layer 1052 is disposed on at least one side of the first metal layer 1051. Thus, on at least one side of the first metal layer 1051, the first metal diffusion inhibiting layer 1052 isolates the first metal layer 1051 from other film layers. The first metal diffusion inhibiting layer 1052 prevents the metal in the first metal layer 1051 from diffusing into other film layers, thereby reducing the risk of functional degradation or damage to other film layers due to metal doping. The composite layer 105 formed by the first metal layer 1051 and the first metal diffusion inhibiting layer 1052 on at least one side of the first metal layer 1051 has improved permeability. Furthermore, the structural design of the composite layer 105 facilitates increasing the parallel resistance of the solar cell 10 and the fill factor of the solar cell 10. Therefore, the technical solutions provided in the embodiments of the present application facilitate improving the efficiency of the solar cell 10.

[0077] In some embodiments, as shown in FIG. 2 , the solar cell may further include a first electrode layer 101 , a first carrier transport layer 102 , a second carrier transport layer 104 , a third carrier transport layer 106 , a fourth carrier transport layer 108 and a second electrode layer 109 .

[0078] Specifically, the first electrode layer 101, the first carrier transport layer 102, the first light absorption layer 103, the second carrier transport layer 104, the recombination layer 105, the third carrier transport layer 106, the second light absorption layer 107, the fourth carrier transport layer 108 and the second electrode layer 109 are arranged in sequence along the x direction.

[0079] The first electrode layer 101 and the second electrode layer 109 are conductive film layers. Connecting the first electrode layer 101 and the second electrode layer 109 can generate photocurrent, thereby supplying power to the photovoltaic device.

[0080] Optionally, in some embodiments, the first carrier transport layer 102 is a hole transport layer, the second carrier transport layer 104 is an electron transport layer, the third carrier transport layer 106 is a hole transport layer, the fourth carrier transport layer 108 is an electron transport layer, and a first metal diffusion inhibition layer 1052 is provided between the third carrier transport layer 106 and the metal layer.

[0081] Optionally, in some embodiments, the first carrier transport layer 102 is an electron transport layer, the second carrier transport layer 104 is a hole transport layer, the third carrier transport layer 106 is a hole transport layer, and the fourth carrier transport layer 108 is an electron transport layer. A first metal diffusion suppression layer 1052 is provided on both sides of the first metal layer 1051. In other words, the first metal layer 1051 and the second carrier transport layer 104, and the first metal layer 1051 and the third carrier transport layer 106 are separated by the first metal diffusion suppression layer 1052.

[0082] Optionally, in some embodiments, the first carrier transport layer 102 is a hole transport layer, the second carrier transport layer 104 is an electron transport layer, the third carrier transport layer 106 is an electron transport layer, and the fourth carrier transport layer 108 is a hole transport layer. The first metal layer 1051 may be provided with a first metal diffusion inhibition layer 1052 on one side or on both sides.

[0083] The hole transport layer is used to transport holes. Optionally, the material of the hole transport layer includes a P-type semiconductor; optionally, the material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, and cuprous oxide.

[0084] The electron transport layer is used to transport electrons. Optionally, the material of the electron transport layer includes an N-type semiconductor. Optionally, the material of the electron transport layer includes at least one of the following materials and their derivatives: bathocuproin, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide. Wherein, the value of x ranges from 1.5 to 2. For example, when x is 2, the material of the electron transport layer can be SnO2.

[0085] In the above technical solution, a first metal diffusion suppression layer 1052 is provided on the side of the first metal layer 1051 close to the hole transport layer. The first metal diffusion suppression layer 1052 separates the first metal layer 1051 from the hole transport layer, reducing the risk of damage to the hole transport layer.

[0086] In some embodiments, as shown in FIG. 1 and FIG. 2 , the thickness d1 of the first metal diffusion suppression layer 1052 satisfies: 0.1 nm≤d1≤100 nm. Optionally, d1 satisfies: 5 nm≤d1≤10 nm.

[0087] Specifically, the thickness d1 of the first metal diffusion inhibition layer 1052 may be 0.1 nm, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a value between any two of the above values.

[0088] Setting the thickness d1 of the first metal diffusion inhibiting layer 1052 within the above range is beneficial to improving the efficiency of the solar cell 10 .

[0089] In some embodiments, as shown in FIG. 1 and FIG. 2 , the thickness d2 of the first metal layer 1051 satisfies: 0.1 nm≤d2≤10 nm. Optionally, d2 satisfies: 0.8 nm≤d2≤1.2 nm.

[0090] Specifically, the thickness d2 of the first metal layer 1051 may be 0.1 nm, 0.8 nm, 1 nm, 1.2 nm, 3 nm, 5 nm, 7 nm, 10 nm, or a value between any two of the above values.

[0091] Setting the thickness d2 of the first metal layer 1051 within the above range is beneficial to improving the efficiency of the solar cell 10 .

[0092] In some embodiments, as shown in FIG. 1 and FIG. 2 , the thickness d of the composite layer 105 satisfies: 1 nm ≤ d ≤ 210 nm. Optionally, d satisfies: 10.8 nm ≤ d ≤ 21.2 nm.

[0093] Specifically, the thickness d of the composite layer 105 may be 1 nm, 5 nm, 10 nm, 20 nm, 30 nm, 50 nm, 70 nm, 100 nm, 150 nm, 200 nm, 210 nm, or a value between any two of the above values.

[0094] Setting the thickness d of the composite layer 105 within the above range is beneficial to improving the efficiency of the solar cell 10 .

[0095] In the technical solution of the embodiment of the present application, the thickness of each film layer can be measured by using a step profiler. For the specific measurement method, reference can be made to the known measurement method of the step profiler.

[0096] In some embodiments, the material of the first metal diffusion inhibition layer 1052 includes at least one of a transparent conductive oxide and a carbon element material.

[0097] Optionally, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide.

[0098] Optionally, the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0099] The above-mentioned substance is used as the material of the first metal diffusion inhibition layer 1052 , which covers at least one side of the first metal layer 1051 , and can reduce the risk of the material of the first metal layer 1051 diffusing into the carrier transport layer.

[0100] In some embodiments, the material of the first electrode layer 101 includes conductive oxide.

[0101] Optionally, the conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide.

[0102] In the above technical solution, the material of the first electrode layer 101 includes the above conductive oxide, which is beneficial for the solar cell 10 to absorb sunlight.

[0103] In some embodiments, as shown in FIG3 , the second electrode layer 109 includes a second metal layer 1091 and a second metal diffusion inhibiting layer 1092, wherein the second metal diffusion inhibiting layer 1092 is disposed between the second metal layer 1091 and the fourth carrier transport layer 108. The second metal diffusion inhibiting layer 1092 can inhibit the diffusion of metal in the second metal layer 1091, that is, can inhibit the diffusion of metal in the second metal layer 1091 into the fourth carrier transport layer 108.

[0104] In the above technical solution, the second metal diffusion inhibition layer 1092 of the second electrode layer 109 is arranged between the second metal layer 1091 of the second electrode layer 109 and the fourth carrier transport layer 108, which can block the diffusion of the metal material in the second metal layer 1091 to the fourth carrier transport layer 108, thereby reducing the risk of damage to the fourth carrier transport layer 108.

[0105] In some embodiments, the second metal layer 1091 includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and alloys thereof. The second metal diffusion suppression layer 1092 includes at least one of transparent conductive oxide and single carbon material.

[0106] Optionally, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide.

[0107] Optionally, the carbon elemental material includes at least one of graphite, graphene, and carbon nanotubes.

[0108] The above substances are used as the material of the second metal diffusion inhibition layer 1092 and are arranged between the second metal layer 1091 and the fourth carrier transport layer 108 , which can reduce the risk of the material of the second metal layer 1091 diffusing into the fourth carrier transport layer 108 .

[0109] Optionally, in some embodiments, the material of the first light absorbing layer 103 is perovskite, and the material of the second light absorbing layer 107 is perovskite.

[0110] Perovskite is a light-absorbing material that generates electron-hole pairs when exposed to sunlight. Perovskite materials offer advantages such as high conversion efficiency, low cost, and environmental friendliness. They can be made into very thin films and applied to solar cells 10, effectively improving their efficiency.

[0111] In some embodiments, the band gap of the material of the first light absorbing layer 103 is larger than the band gap of the material of the second light absorbing layer 107 .

[0112] The band gap refers to the energy difference between the lowest point of the conduction band and the highest point of the valence band in a semiconductor material.

[0113] Optionally, the band gap of the material of the first light absorbing layer 103 is 1.6eV-2.3eV, and the band gap of the material of the second light absorbing layer 107 is 1.0eV-1.4eV. For example, the perovskite material of the first light absorbing layer 103 is a bromine-iodine mixed perovskite, and the perovskite material of the second light absorbing layer 107 is a tin-lead mixed perovskite.

[0114] Optionally, in some embodiments, the material of the second light absorbing layer 107 is silicon, copper indium gallium selenide, copper indium selenide, cadmium telluride or gallium arsenide.

[0115] The sunlight first irradiates the first light absorbing layer 103 . The band gap of the material of the first light absorbing layer 103 is set to be larger than the band gap of the material of the second light absorbing layer 107 , which is beneficial to improving the efficiency of the solar cell 10 .

[0116] In some embodiments, the chemical formula of the perovskite in the first light absorbing layer 103 and the second light absorbing layer 107 is ABX3, wherein A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + 、Li + 、Na + , K + , Rb + 、Cs + At least one of, B includes Pb + 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CP - 、CN - 、SeCN - 、N3 - 、NO2 -In this way, it is convenient to flexibly select the specific type of perovskite according to actual needs.

[0117] Optionally, in some embodiments, the solar cell 10 further includes a blocking layer, such as a hole blocking layer and an electron blocking layer. Specifically, the electron blocking layer is disposed between the light absorbing layer and the hole transport layer, and the hole blocking layer is disposed between the light absorbing layer and the electron transport layer.

[0118] The electron blocking layer can transport holes, and the hole blocking layer can transport electrons.

[0119] Optionally, as shown in FIG. 4 , the solar cell 10 further includes a first hole blocking layer 110 . When the second carrier transport layer 104 is an electron transport layer, the first hole blocking layer 110 is located between the first light absorbing layer 103 and the second carrier transport layer 104 .

[0120] Optionally, with continued reference to FIG. 4 , the solar cell 10 further includes a second hole blocking layer 111 . When the fourth carrier transport layer 108 is an electron transport layer, the second hole blocking layer 111 is located between the second light absorbing layer 107 and the fourth carrier transport layer 108 .

[0121] In the above technical solution, a hole blocking layer is provided between the light absorbing layer and the electron transport layer, which is beneficial to improving the electron transport between the electron transport layer and the light absorbing layer, thereby improving the efficiency of the solar cell 10 .

[0122] Optionally, in some embodiments, the materials of the first hole blocking layer 110 and the second hole blocking layer 111 include fullerene and its derivatives, SnO x At least one of the following, wherein the value of x ranges from 1.5 to 2. For example, x can be 2, and the materials of the first hole blocking layer 110 and the second hole blocking layer 111 can include SnO2.

[0123] Using the above materials as the materials for the first hole blocking layer 110 and the second hole blocking layer 111 can improve the efficiency of the solar cell 10 .

[0124] [Method for producing solar cells]

[0125] The solar cell provided in the embodiment of the present application is introduced above. The preparation method of the solar cell provided in the embodiment of the present application is introduced below, in which the parts similar to the above solar cell are not repeated here.

[0126] FIG5 is a diagram illustrating a method for preparing a solar cell according to an embodiment of the present application. As shown in FIG5 , the preparation method 500 includes providing a first light absorbing layer, a composite layer, and a second light absorbing layer sequentially arranged along a first direction.

[0127] The first direction is the incident direction of sunlight, and the composite layer includes a first metal layer and a first metal diffusion inhibition layer located on at least one side of the first metal layer.

[0128] The solar cell prepared by the above method has high cell efficiency.

[0129] Optionally, in some embodiments, the preparation method further includes: providing a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite layer, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer and a second electrode layer arranged in sequence along the first direction.

[0130] Optionally, in some embodiments, the preparation method includes: providing a first electrode layer; preparing a first carrier transport layer on the first electrode layer, the first carrier transport layer being a hole transport layer; preparing a first light absorption layer on the first carrier transport layer; preparing a second carrier transport layer on the first light absorption layer, the second carrier transport layer being an electron transport layer; preparing a first metal layer on the electron transport layer, and preparing a first metal diffusion inhibition layer on the metal layer to obtain a composite layer; preparing a third carrier transport layer on the composite layer, the third carrier transport layer being a hole transport layer; preparing a second light absorption layer on the third carrier transport layer; preparing a fourth carrier transport layer on the second light absorption layer, the fourth carrier transport layer being an electron transport layer; and preparing a second electrode layer on the fourth carrier transport layer.

[0131] Optionally, in some embodiments, the second electrode layer includes a second metal layer and a second metal diffusion inhibition layer, and the second electrode layer is prepared on the fourth carrier transport layer, including: preparing the second metal diffusion inhibition layer on the fourth carrier transport layer, preparing the second metal layer on the second metal diffusion inhibition layer, to obtain the second electrode layer.

[0132] In some embodiments, the thickness d1 of the first metal diffusion inhibition layer satisfies: 0.1 nm≤d1≤100 nm. Optionally, d1 satisfies: 5 nm≤d1≤10 nm.

[0133] In some embodiments, the thickness d2 of the first metal layer satisfies: 0.1 nm≤d2≤10 nm. Optionally, d2 satisfies: 0.8 nm≤d2≤1.2 nm.

[0134] In some embodiments, the thickness d of the composite layer satisfies: 1 nm≤d≤210 nm. Optionally, d satisfies: 10.8 nm≤d≤21.2 nm.

[0135] In some embodiments, the material of the first metal layer includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten and alloys thereof. Optionally, the material of the first metal layer includes at least one of gold and silver.

[0136] In some embodiments, the material of the first metal diffusion inhibition layer includes at least one of a transparent conductive oxide and a carbon element material; optionally, the transparent conductive oxide includes at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide or aluminum-doped zinc oxide; optionally, the carbon element material includes at least one of graphite, graphene and carbon nanotubes.

[0137] Optionally, in some embodiments, the material of the first light absorbing layer is perovskite, and the material of the second light absorbing layer is perovskite.

[0138] In some embodiments, the band gap of the material of the first light absorbing layer is greater than the band gap of the material of the second light absorbing layer.

[0139] The present application also provides a photovoltaic module. Typically, the photovoltaic module includes the aforementioned solar cell, and / or the solar cell manufactured according to the aforementioned manufacturing method, a welding ribbon connecting multiple solar cells, a junction box for current transmission, and a battery packaging component.

[0140] In some embodiments, the battery packaging component includes photovoltaic glass, which covers the solar cells to protect them. Photovoltaic glass has excellent light transmittance and high hardness, making it adaptable to large temperature swings between day and night and adverse weather conditions.

[0141] In some embodiments, the battery packaging component includes an EVA film, which is disposed between the photovoltaic glass and the solar cell and is used to bond the photovoltaic glass and the solar cell.

[0142] In some embodiments, the battery packaging component includes a photovoltaic backsheet, which also serves to protect the solar cells.

[0143] Optionally, the material of the photovoltaic backsheet can be a polyvinyl fluoride composite film or a thermoplastic elastic material. The material of the photovoltaic backsheet has the properties of insulation, waterproofness, and aging resistance.

[0144] In some embodiments, the battery packaging component includes a solar aluminum frame, which is made of aluminum alloy and has the characteristics of high strength and good corrosion resistance, and can support and protect the solar cell.

[0145] An embodiment of the present application further provides a photovoltaic device, comprising the photovoltaic assembly provided in the above embodiment.

[0146] In some embodiments, the photovoltaic device may also be a lighting device, an energy storage device, etc., and the embodiments of the present application include but are not limited to the above. For example, the photovoltaic device may be a solar water heater, a solar street light, a solar photovoltaic generator, etc.

[0147] [Example]

[0148] Below, the embodiment of the present application is described. The embodiment described below is exemplary and is only used to explain the present application, and is not to be construed as limiting the present application. Where specific techniques or conditions are not specified in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. Reagents or instruments used that do not specify the manufacturer are conventional products that can be obtained commercially.

[0149] 1. Preparation of solar cells

[0150] [Example 1]

[0151] Example 1 corresponds to the structure of the solar cell shown in FIG. 1 .

[0152] First electrode layer: The first electrode layer is provided on a glass substrate. The material of the first electrode layer is indium tin oxide (ITO). The glass substrate having the first electrode layer is cleaned in sequence with acetone, alcohol, and deionized water, and dried for later use.

[0153] First carrier transport layer (hole transport layer): [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (MeO-4PACz) was added to an ethanol solvent and stirred. The ethanol solution of MeO-4PACz was spin-coated onto the first electrode layer (spin coating speed of 4000 rpm, spin coating time of 30 s), and then transferred to a hot stage and annealed at 100°C for 10 min to form the first carrier transport layer.

[0154] First light absorption layer: 123 mg of CH(NH2)2I, 59 mg of CH(NH2)2Br, 46 mg of CsI, 25 mg of CsBr, 428 mg of PbI2 and 209 mg of PbBr2 were added to 1 mL of a mixed solvent of DMF and DMSO (the volume ratio of DMF and DMSO was 3:1), stirred at 600 rpm on a magnetic stirrer for 8 h, and filtered to obtain a perovskite precursor solution. 100 μL of the above-mentioned perovskite precursor solution was spin-coated onto the above-mentioned first carrier transport layer (first at a spin-coating speed of 2000 rpm and an acceleration of 200 rpm / s for 10 s, then at a spin-coating speed of 4000 rpm and an acceleration of 1000 rpm / s for 25 s), and then 200 μL of chlorobenzene was added dropwise to the spin-coated perovskite precursor solution, followed by spin-coating the above-mentioned perovskite precursor solution (spin-coating speed of 4000 rpm, spin-coating time of 15 s), and then transferred to a hot stage for annealing at 100°C for 15 min to form a first light absorption layer.

[0155] Second carrier transport layer (electron transport layer): A 20 nm layer of SnO2 was prepared on the first light absorption layer using an atomic layer deposition (ALD) device to form a second carrier transport layer.

[0156] Composite layer: Use ALD equipment to prepare a 5nm ITO layer on the above-mentioned second carrier transport layer to form a first metal diffusion inhibition layer with a thickness d1 of 5nm; then use evaporation equipment to evaporate a 1nm layer of elemental gold (Au) on the first metal diffusion inhibition layer to form a first metal layer with a thickness d2 of 1nm; finally, use ALD equipment to prepare a 5nm ITO layer on the first metal layer to form another first metal diffusion inhibition layer with a thickness d1 of 5nm to obtain a composite layer.

[0157] Third carrier transport layer (hole transport layer): Poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid) (PEDOT:PSS) was spin-coated on the above composite layer (spin coating speed was 4000 rpm, spin coating time was 30 s), and then transferred to a hot stage and annealed at 150°C for 10 min to form the third carrier transport layer.

[0158] Second light absorbing layer: 216 mg of CH(NH2)2I, 85 mg of CH3NH2I, 414 mg of PbI2, 335 mg of SnI2, and 0.5 mg of MeO-4PACz were added to 1 mL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO was 3:1), stirred at 600 rpm on a magnetic stirrer for 2 h, and filtered to obtain a perovskite precursor solution; 100 μL of the above perovskite precursor solution was spin-coated onto the The third carrier transport layer was coated (first at a spin coating speed of 1000 rpm and an acceleration of 200 rpm / s for 10 s, then at a spin coating speed of 3000 and an acceleration of 1000 rpm / s for 20 s), and then 350 μL of ethyl acetate was added to the spin-coated perovskite precursor solution, followed by spin coating of the above perovskite precursor solution (spin coating speed of 4000 rpm, spin coating time of 20 s), and then transferred to a hot stage for annealing at 100°C for 10 min to form a second light absorption layer.

[0159] Fourth carrier transport layer (electron transport layer): A layer of 10 μm of bathocuproin (BCP) is evaporated on the second light absorbing layer to form the fourth carrier transport layer.

[0160] Second electrode layer: A 100 nm thick layer of copper (Cu) was evaporated on the fourth carrier transport layer to form a second electrode layer, thereby finally obtaining the solar cell of Example 1.

[0161] [Examples 2-5, 10]

[0162] The preparation of Examples 2-5 and 10 is similar to that of Example 1, except that the thickness d1 of the first metal diffusion inhibiting layer in Examples 2-5 and 10 is 0.1 nm, 1.0 nm, 10 nm, 100 nm, and 120 nm, respectively. See Table 1 for details.

[0163] [Examples 6-9, 11]

[0164] The preparation of Examples 6-9 and 11 is similar to that of Example 1, except that the thickness d2 of the second metal layer in Examples 6-9 and 11 is 0.1 nm, 0.8 nm, 1.2 nm, 10 nm, and 12 nm, respectively. See Table 1 for details.

[0165] [Example 12]

[0166] The preparation of Example 12 is similar to that of Example 1, except that in the preparation of the composite layer in Example 12: a 1 nm layer of elemental Au is evaporated on the second carrier transport layer using an evaporation device to form a first metal layer with a thickness d2 of 1 nm; and then an ALD device is used to prepare a 5 nm layer of ITO on the first metal layer to form a first metal diffusion inhibition layer with a thickness d1 of 5 nm to obtain a composite layer.

[0167] [Example 13]

[0168] The preparation of Example 13 is similar to that of Example 1, except that the preparation of the first carrier transport layer and the second carrier transport layer in Example 13 is as follows: in Example 13, the first carrier transport layer is an electron transport layer, and a 20 nm layer of SnO2 is prepared on the first electrode layer using an ALD device to form a first carrier transport layer; the second carrier transport layer is a hole transport layer, and MeO-4PACz is added to an ethanol solvent and stirred, and the ethanol solution of MeO-4PACz is spin-coated onto the first light absorption layer (spin coating speed is 4000 rpm, spin coating time is 30 s), and then transferred to a hot stage and annealed at 100°C for 10 min to form a second carrier transport layer.

[0169] [Example 14]

[0170] The preparation of Example 14 is similar to that of Example 1, except that in Example 14, the second electrode layer is prepared by using an ALD device to prepare a 5 nm ITO layer on the fourth carrier transport layer to form a second metal diffusion inhibition layer, and then a 100 nm metal copper (Cu) layer is evaporated on the second metal diffusion inhibition layer to form a second metal layer to obtain a second electrode layer.

[0171] [Example 15]

[0172] The preparation of Example 15 is similar to that of Example 1, except that in Example 15, the solar cell further includes a first hole blocking layer and a second hole blocking layer. Specifically, a first hole blocking layer is disposed between the first light absorbing layer and the second carrier transport layer. A 25 nm layer of C60 is evaporated on the first light absorbing layer to form the first hole blocking layer. Then, a second carrier transport layer is prepared on the first hole blocking layer (for the preparation process of the second carrier transport layer, see Example 1). A second hole blocking layer is disposed between the second light absorbing layer and the fourth carrier transport layer. A 25 nm layer of C60 is evaporated on the second light absorbing layer to form the second hole blocking layer. Then, a second electrode layer is prepared on the second hole blocking layer (for the preparation process of the second electrode layer, see Example 1).

[0173] [Example 16]

[0174] The preparation of Example 16 is similar to that of Example 1, except that in Example 16, the material of the first metal diffusion inhibition layer is fluorine-doped tin oxide (FTO), as shown in Table 1 for details.

[0175] [Example 17]

[0176] The preparation of Example 17 is similar to that of Example 1, except that in Example 17, the material of the first metal layer is elemental silver (Ag), as shown in Table 1 for details.

[0177] [Example 18]

[0178] The preparation of Example 18 is similar to that of Example 1, except that in Example 18, the material of the second light absorption layer is single-crystalline silicon. Preparation of the second light absorption layer: Use a strong base to clean and texture the single-crystalline silicon to obtain a double-sided textured surface; then use plasma enhanced chemical vapor deposition (PECVD) equipment to prepare a 5nm layer of intrinsic i-type amorphous silicon and a 100nm layer of doped p-type amorphous silicon on one side of the double-sided textured single-crystalline silicon wafer, and then use PECVD equipment to prepare a 5nm layer of intrinsic i-type amorphous silicon and a 100nm layer of doped N-type amorphous silicon on the other side; use physical vapor deposition (PVD) equipment to prepare a 100nm layer of ITO on both sides of the sample of the prepared amorphous silicon to obtain the second light absorption layer.

[0179] [Comparative Examples 1-2]

[0180] Comparative Examples 1 and 2 were prepared similarly to Example 1, except that the composite layer in Comparative Example 1 only included a 1 nm gold layer, and the composite layer in Comparative Example 2 only included a 100 nm ITO layer.

[0181] Next, the test process of solar cell performance is described.

[0182] 2. Performance test of solar cells

[0183] Under standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) irradiation, the battery performance is tested and the IV curve is obtained. According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open-circuit voltage Voc (V), maximum optical output current Jmpp (mA), and maximum optical output voltage Vmpp (V). The cell's fill factor (FF) (in %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The cell's photoelectric conversion efficiency (PCE) (in %) is calculated using the formula PCE = Jsc × Voc × FF / Pin. Pin represents the incident light input power (in mW).

[0184] The battery performance of Examples 1-18 and Comparative Examples 1-2 prepared in accordance with the above method was tested, and the test results are detailed in Table 1. In Table 1, d1 represents the thickness of the first metal diffusion inhibiting layer, d2 represents the thickness of the first metal layer, and d represents the thickness of the composite layer.

[0185] Table 1: Product parameters and performance test results of Examples 1-18 and Comparative Examples 1-2

[0186] From the comparison of the results of Comparative Example 1-2 and Example 1-13, it can be seen that the composite layer arranged between the first light absorption layer and the second light absorption layer in the solar cell adopts a composite structure of a metal layer and a protective layer arranged on at least one side of the metal layer, and the efficiency of the solar cell is improved.

[0187] From the comparison of the results of Examples 1-5 and Example 10, it can be seen that when the thickness of the first metal diffusion inhibition layer is set within an appropriate range, the efficiency improvement effect of the solar cell is more obvious. Under the same other conditions, when the thickness of the first metal diffusion inhibition layer is set within the range of 0.1nm to 100nm, the efficiency improvement effect of the solar cell is more obvious.

[0188] From the comparison of the results of Examples 6-9 and Example 11, it can be seen that when the thickness of the first metal layer is set within an appropriate range, the efficiency improvement effect of the solar cell is more obvious. Under the same other conditions, when the thickness of the first metal layer is set within the range of 0.8nm to 1.2nm, the efficiency improvement effect of the solar cell is more obvious.

[0189] From the comparison of the results of Example 1 and Example 15, it can be seen that providing a hole blocking layer between the light absorbing layer and the electron transport layer is beneficial to improving the efficiency of the solar cell.

[0190] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the present application, any other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A solar cell, characterized in that: include: A first light absorbing layer, a composite layer and a second light absorbing layer are sequentially arranged along a first direction, wherein the first direction is an incident direction of sunlight; The composite layer includes a first metal layer and a first metal diffusion inhibiting layer located on at least one side of the first metal layer.

2. The solar cell according to claim 1, characterized in that: The solar cell also includes a first electrode layer, a first carrier transport layer, a second carrier transport layer, a third carrier transport layer, a fourth carrier transport layer and a second electrode layer, wherein the first electrode layer, the first carrier transport layer, the first light absorption layer, the second carrier transport layer, the composite layer, the third carrier transport layer, the second light absorption layer, the fourth carrier transport layer and the second electrode layer are arranged in sequence along the first direction.

3. The solar cell according to claim 2, characterized in that: The first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, the fourth carrier transport layer is an electron transport layer, and the first metal diffusion inhibition layer is arranged between the third carrier transport layer and the first metal layer.

4. The solar cell according to any one of claims 1 to 3, characterized in that The thickness d1 of the first metal diffusion inhibiting layer satisfies: 0.1 nm≤d1≤100 nm.

5. The solar cell according to claim 4, characterized in that: The thickness d1 of the first metal diffusion inhibiting layer satisfies: 5 nm≤d1≤10 nm.

6. The solar cell according to any one of claims 1 to 5, characterized in that The thickness d2 of the first metal layer satisfies: 0.1 nm≤d2≤10 nm.

7. The solar cell according to claim 6, characterized in that: The thickness d2 of the first metal layer satisfies: 0.8nm≤d2≤1.2nm.

8. The solar cell according to any one of claims 1 to 7, characterized in that The thickness d of the composite layer satisfies: 1nm≤d≤210nm.

9. The solar cell according to claim 8, characterized in that The thickness d of the composite layer satisfies: 10.8nm≤d≤21.2nm.

10. The solar cell according to any one of claims 1 to 9, characterized in that: The material of the first metal layer includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten and alloys thereof.

11. The solar cell according to claim 10, characterized in that The material of the first metal layer includes at least one of gold, silver and alloys thereof.

12. The solar cell according to any one of claims 1 to 11, characterized in that The material of the first metal diffusion inhibition layer includes at least one of a transparent conductive oxide and a carbon single substance material.

13. The solar cell according to claim 12, characterized in that: The transparent conductive oxide comprises at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide; The carbon single substance material includes at least one of graphite, graphene and carbon nanotubes.

14. The solar cell according to claim 2, characterized in that: The material of the first electrode layer includes: a conductive oxide, and the conductive oxide includes at least one of indium tin oxide, lanthanide metal-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide.

15. The solar cell according to claim 2, characterized in that: The second electrode layer includes a second metal layer and a second metal diffusion inhibiting layer, and the second metal diffusion inhibiting layer is disposed between the second metal layer and the fourth carrier transporting layer.

16. The solar cell according to claim 15, characterized in that: The material of the second metal layer includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten and alloys thereof; The second metal diffusion inhibiting layer includes at least one of a transparent conductive oxide and a carbon single substance material.

17. The solar cell according to claim 16, characterized in that: The transparent conductive oxide comprises at least one of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide; The carbon single substance material includes at least one of graphite, graphene and carbon nanotubes.

18. The solar cell according to claim 3, characterized in that: The material of the hole transport layer includes a P-type semiconductor, and the material of the electron transport layer includes an N-type semiconductor.

19. The solar cell according to claim 18, characterized in that The material of the hole transport layer includes at least one of the following materials and their derivatives: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid, [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphoric acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide; The material of the electron transport layer includes at least one of the following materials and their derivatives: bathocuproin, [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl C71-butyric acid methyl ester, C60, C70, SnO x , zinc oxide, where the value of x ranges from 1.5 to 2.

20. The solar cell according to any one of claims 1 to 19, characterized in that The material of the first light absorbing layer is perovskite, and the material of the second light absorbing layer is perovskite.

21. The solar cell according to claim 20, characterized in that The band gap of the material of the first light absorbing layer is greater than the band gap of the material of the second light absorbing layer.

22. The solar cell according to claim 21, characterized in that The chemical formula of the perovskite in the first light absorbing layer and the second light absorbing layer is ABX3, wherein: A includes CH3(NH2)2 + 、CH(NH2)2 + 、CH3NH2 + , Li + 、Na + , K + , Rb + , Cs + At least one of B including Pb + 、Be 2+ Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ 、Zn 2+ ,Ge 2+ , Fe 2+ 、Co 2+ 、Ni 2+ At least one of, X includes Cl - Br - ,I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - , CP - , CN - 、SeCN - 、N3 - 、NO2 - At least one of .

23. The solar cell according to claim 3, characterized in that The solar cell further includes a first hole blocking layer located between the first light absorbing layer and the second carrier transporting layer.

24. The solar cell according to claim 23, characterized in that The material of the first hole blocking layer includes fullerene and its derivatives, SnO x At least one of the following, wherein the value range of x is 1.5 to 2.

25. The solar cell according to claim 3, characterized in that The solar cell further includes a second hole blocking layer located between the second light absorbing layer and the fourth carrier transporting layer.

26. The solar cell according to claim 25, characterized in that The material of the second hole blocking layer includes fullerene and its derivatives, SnO x At least one of the following, wherein the value range of x is 1.5 to 2.

27. A method for preparing a solar cell, characterized in that: include: Providing a first light absorbing layer, a composite layer, and a second light absorbing layer arranged in sequence along a first direction, wherein the first direction is an incident direction of sunlight; The composite layer includes a first metal layer and a first metal diffusion inhibiting layer located on at least one side of the first metal layer.

28. The preparation method according to claim 27, characterized in that: The preparation method further comprises: Provide a first electrode layer, a first carrier transport layer, the first light absorption layer, a second carrier transport layer, the composite layer, a third carrier transport layer, the second light absorption layer, a fourth carrier transport layer and a second electrode layer which are arranged in sequence along the first direction.

29. The preparation method according to claim 28, characterized in that: The first electrode layer, the first carrier transport layer, the first light absorption layer, the second carrier transport layer, the composite layer, the third carrier transport layer, the second light absorption layer, the fourth carrier transport layer and the second electrode layer are sequentially arranged along the first direction, comprising: providing the first electrode layer; preparing the first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer; preparing the first light absorbing layer on the first carrier transport layer; preparing the second carrier transport layer on the first light absorbing layer, wherein the second carrier transport layer is an electron transport layer; preparing the first metal layer on the second carrier transport layer, and preparing the first metal diffusion inhibition layer on the first metal layer, to obtain the composite layer; Preparing the third carrier transport layer on the composite layer, wherein the third carrier transport layer is a hole transport layer; preparing the second light absorbing layer on the third carrier transport layer; Preparing the fourth carrier transport layer on the second light absorbing layer, wherein the fourth carrier transport layer is an electron transport layer; The second electrode layer is formed on the fourth carrier transport layer.

30. The preparation method according to claim 29, characterized in that: The second electrode layer includes a second metal layer and a second metal diffusion inhibition layer, and the second electrode layer is prepared on the fourth carrier transport layer, including: The second metal diffusion inhibiting layer is formed on the fourth carrier transporting layer, and the second metal layer is formed on the second metal diffusion inhibiting layer to obtain the second electrode layer.

31. A photovoltaic module, characterized in that: The invention comprises a solar cell according to any one of claims 1 to 26, and / or a solar cell prepared by the preparation method according to any one of claims 27 to 30.

32. A photovoltaic device, characterized in that: Comprising the photovoltaic module according to claim 31.

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