Plate-type heating device and manufacturing method therefor
The integration of smile ceramic powder between the heating wire and ceramic substrate in the plate-type heating device addresses cracking and heat transfer efficiency issues, enhancing the device's thermal conductivity and reliability.
Patent Information
- Application Number
- PCT/KR2024/011072
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-08-01
- Filing Date
- 2024-07-30
- Publication Date
- 2025-02-06
AI Technical Summary
Conventional plate-type heating devices for semiconductor manufacturing experience frequent cracking due to stress from heat expansion rate differences between the heating wire and ceramic substrate, and suffer from low heat transfer efficiency between the wire and substrate.
Incorporating smile ceramic powder between the heating wire and ceramic substrate to absorb stress and improve thermal conductivity, with the powder being strategically positioned along the heating wire and filling gaps between the wire and substrate, and using a manufacturing method involving insertion grooves, ceramic powder filling, and sintering steps to ensure effective integration.
Significantly reduces cracking and enhances thermal conductivity between the heating wire and ceramic substrate, improving the overall performance and efficiency of the heating device.
Smart Images

Figure KR2024011072_06022025_PF_FP_ABST
Abstract
Description
Plate type heating device and manufacturing method thereof
[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2023-0100147, filed August 1, 2023, the entire contents of which are incorporated herein by reference.
[0002] The present invention relates to a plate type heating device and a method for manufacturing the same.
[0003] Plate-type heating devices used for purposes such as wafer heating during semiconductor manufacturing processes have a structure in which heating wires are arranged within a ceramic plate substrate. That is, the plate-type heating device bends or curves heating wires that generate heat by receiving power and arranges them within the plate substrate, and supplies power to the heating wires to heat the plate substrate.
[0004] Fig. 10 is a cross-sectional view showing the arrangement of heating wires in a conventional plate-type heating device. Referring to Fig. 10, a method for manufacturing a conventional plate-type heating device is described as follows. First, a groove for arranging heating wires is formed on a ceramic degreasing body (or molded body, sintered body) made of Al2O3 or AlN, and a wire-type heating wire (2) is inserted and arranged in the groove. At this time, a separate coating layer may be formed on the outer periphery of the heating wire (2). Next, a ceramic degreasing body made of Al2O3 or AlN on which the heating wire (2) is arranged is laminated, or Al2O3 or AlN powder is laminated, and then pressure sintered to manufacture a ceramic plate-type sintered body in which the heating wire is embedded.
[0005] The conventional plate-type sintered body described above has the disadvantage of frequently causing cracks due to stress generated by the difference in thermal expansion rates between the ceramic plate substrate and the heating wire material (the heating wire is heated at a temperature approximately 100 to 200°C higher than the ceramic plate substrate). In addition, since the heating wire is inserted by fitting it into the groove, there is a gap between the ceramic plate substrate and the heating wire, which has the disadvantage of reducing heat transfer efficiency.
[0006] Therefore, research is needed to improve the cracking problem of the plate type heating device and the reduced heat transfer efficiency problem between the heating wire and the ceramic plate substrate.
[0007] [Prior Art Literature]
[0008] [Patent Document]
[0009] Republic of Korea Publication Patent No. 10-2014-0023743
[0010] The present invention has been devised to solve the above-mentioned problems of the prior art, and aims to provide a plate-type heating device having excellent performance in absorbing stress generated due to a difference in thermal expansion coefficient between a heating wire and a ceramic plate substrate, thereby minimizing the occurrence of cracks, and having excellent thermal conductivity between a heating wire and a ceramic plate substrate, and a method for manufacturing the same.
[0011] In order to achieve the above purpose, the present invention
[0012] Ceramic plate substrate, and
[0013] It includes a heating wire embedded inside the above ceramic plate substrate,
[0014] A plate type heating device is provided in which a micro-sintered ceramic powder is positioned between the outer peripheral portion of the above-mentioned heating wire and the ceramic plate substrate.
[0015] In one embodiment of the present invention, the unsintered ceramic powder may be positioned continuously or intermittently along the heating wire.
[0016] In one embodiment of the present invention, the unsintered ceramic powder may be located only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the hot wire, or may be located between the entire outer periphery and the ceramic substrate.
[0017] In one embodiment of the present invention, the partial outer circumference may be 20 to 90% of the outer circumference based on the cross-section of the heating wire. In addition, the partial outer circumference may be 55 to 90% of the outer circumference based on the cross-section of the heating wire.
[0018] In one embodiment of the present invention, when the unsintered ceramic powder is located only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the hot wire, the unsintered ceramic powder may be filled from the bottom of the hot wire.
[0019] In one embodiment of the present invention, a ceramic plate substrate or unsintered ceramic powder may be placed between the heating wires.
[0020] In one embodiment of the present invention, the unsintered ceramic powder may be a material having a sintering temperature 50°C or higher than that of the ceramic material constituting the ceramic plate substrate.
[0021] In one embodiment of the present invention, the unsintered ceramic powder may have a thermal expansion coefficient that is smaller than or equal to that of a ceramic material constituting the ceramic plate substrate.
[0022] In one embodiment of the present invention, the unsintered ceramic powder may have a thermal conductivity coefficient greater than or equal to that of a ceramic material constituting the ceramic plate substrate.
[0023] In one embodiment of the present invention, the micro-sintered ceramic powder can be arranged to have a thickness of 30 μm or more.
[0024]
[0025] In addition, the present invention
[0026] An insertion groove forming step for forming a heat wire insertion groove on a degreasing body formed with a first ceramic powder;
[0027] A second ceramic powder filling step of filling a second ceramic powder having a sintering temperature 50°C or higher than that of the ceramic powder into the above-mentioned heating wire insertion groove;
[0028] A heating wire wiring step of placing a heating wire in a heating wire insertion groove filled with the second ceramic powder;
[0029] A first ceramic lamination step of laminating a first ceramic powder on a degreasing body through which the above-mentioned heating wires are wired, or laminating a degreasing body formed with the first ceramic powder; and
[0030] A method for manufacturing a plate-type heating device is provided, including a sintering step of sintering a laminated body in which the first ceramic is laminated at a temperature higher than the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.
[0031] In one embodiment of the present invention, the heating wire wiring step may be a step of placing the heating wire on the filled second ceramic powder; placing the heating wire so that it is partially buried in the second ceramic powder; or placing the heating wire so that it is entirely buried in the second ceramic powder.
[0032] In one embodiment of the present invention, when the heating wire is placed on the second ceramic powder filled in the heating wire wiring step or the heating wire is placed so that a portion of the heating wire is buried in the second ceramic powder, a step of applying the second ceramic powder so that the entire heating wire is covered by the second ceramic powder may be further performed before the first ceramic lamination step.
[0033] In one embodiment of the present invention, in the insertion groove forming step, the insertion groove may be formed in a size in which one heating wire can be placed according to the heating wire arrangement configuration; may be formed in a size in which two or more heating wires can be placed per heating wire arrangement area; or may be formed in a size in which all heating wires can be placed.
[0034] The plate type heating device of the present invention provides the effect of significantly reducing the occurrence of cracks, since the unsintered ceramic powder efficiently absorbs stress generated due to the difference in thermal expansion rate between the heating wire and the ceramic plate substrate.
[0035] In addition, since the micro-sintered ceramic powder fills the space between the outer periphery of the heating wire and the ceramic plate substrate without any gaps, it provides the effect of significantly improving the thermal conductivity between the heating wire and the ceramic plate substrate.
[0036] The method for manufacturing a plate type heating device of the present invention provides an effect of improving the production efficiency of a heating device having the above-described structure.
[0037] Figures 1 to 4 are cross-sectional views showing one embodiment of a plate type heating device according to the present invention.
[0038] Figures 5 to 8 are cross-sectional views illustrating one embodiment of a method for manufacturing a plate-type heating device according to the present invention.
[0039] Fig. 9 is a cross-sectional view showing one embodiment of a plate type heating device according to the present invention.
[0040] Fig. 10 is a cross-sectional view showing the arrangement of heating wires in a conventional plate type heating device.
[0041] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. Like reference numerals designate similar parts throughout the specification.
[0042] Figures 1 to 4 are cross-sectional views showing one embodiment of a plate type heating device according to the present invention.
[0043] The plate type heating device (100) of the present invention includes a ceramic plate substrate (10) and a heating wire (20) embedded inside the ceramic plate substrate, and has the characteristic that an unsintered ceramic powder (30) is positioned between the outer periphery of the heating wire (20) and the ceramic plate substrate (10).
[0044] The above-mentioned unsintered ceramic powder (30) performs the function of absorbing the stress generated due to the difference in thermal expansion rate between the heating wire (20) and the ceramic plate substrate (10). Generally, the heating wire (20) is made of a metal material, and the ceramic plate substrate (10) is made of a ceramic material such as Al2O3, AlN, ALON, etc., and therefore, they have different thermal expansion rates. Therefore, stress is generated due to this difference in thermal expansion rate during heating, and cracks commonly occur on the ceramic plate substrate due to this stress. In particular, when the plate-type heating device (100) is driven, the heating wire (20) is heated to a temperature about 100 to 200°C higher than the ceramic plate substrate (10), and therefore, cracks may occur more frequently due to this heating temperature difference.
[0045] The plate type heating device (100) of the present invention has a micronized ceramic powder (30) positioned between a heating wire (20) and a ceramic plate substrate (10), and since the stress is absorbed by the fluidity of the micronized ceramic powder (30), the occurrence of cracks in the ceramic plate substrate (10) is significantly reduced.
[0046] In addition, since the microporous ceramic powder (30) having fluidity fills the space between the heating wire (20) and the ceramic plate substrate (10) without a gap, the thermal conductivity between the heating wire and the ceramic plate substrate is improved. That is, when the heating wire is inserted into a groove formed in the ceramic plate substrate in a fitting manner as in the past, a gap inevitably occurs between the heating wire and the ceramic plate substrate, but according to the present invention, the occurrence of such a gap is prevented, so that the thermal conductivity performance can be improved.
[0047] In one embodiment of the present invention, the unsintered ceramic powder (30) may be positioned continuously or intermittently along the hot wire (20). Continuously as described above means that the unsintered ceramic powder (30) is positioned continuously from beginning to end along the outer periphery of the hot wire. In addition, intermittently as described above means that the unsintered ceramic powder (30) is positioned along the outer periphery of the hot wire (20), but is not positioned in some outer peripheries of the hot wire (20), so that one or more short circuits are formed based on the unsintered ceramic powder (30).
[0048] In one embodiment of the present invention, the unsintered ceramic powder (30) may be positioned only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the heating wire (10), as shown in FIG. 2, or may be positioned between the entire outer periphery and the ceramic substrate, as shown in FIGS. 1 and 3.
[0049] In one embodiment of the present invention, the outer peripheral portion may be 20 to 90%, 50 to 90%, or 55 to 90% of the outer peripheral portion based on the cross-section of the heating wire (20). In this case, when the unsintered ceramic powder (30) is positioned at 50% or more, when the volume of the heating wire (10) expands, the stress transmitted to the adjacent ceramic plate substrate (10) is minimized, and the stress is smoothly absorbed through the unsintered ceramic powder (30), which may be preferable.
[0050] In one embodiment of the present invention, when the unsintered ceramic powder (30) is located only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the heating wire (20), as shown in FIG. 2, the unsintered ceramic powder may be filled from the bottom of the heating wire.
[0051] In one embodiment of the present invention, a ceramic plate substrate (10) may be placed between the heating wires (20) as shown in FIGS. 1 and 2, or an unsintered ceramic powder (30) may be placed between the heating wires (20) as shown in FIGS. 3 and 4. In the case where the unsintered ceramic powder (30) is placed between the heating wires (20) as shown in FIGS. 3 and 4, the stress absorption capacity of the unsintered ceramic powder (30) may be further increased.
[0052] In one embodiment of the present invention, the unsintered ceramic powder may be a material having a sintering temperature 50°C or higher than that of a ceramic material constituting the ceramic plate substrate, and preferably 100°C or higher.
[0053] Ceramic materials that constitute the above-mentioned substrate may include, but are not limited to, Al2O3, AlN, ALON, etc.
[0054] As a non-sintered ceramic powder material having a sintering temperature 50°C or higher than that of the above ceramic material, oxide-based, carbide-based, nitride-based, or boride-based ceramics may be used, and preferably, MgO, WC, TaC, TiC, CNT, Graphene, SiC, SiC Whisker, BN, TiN, ZrB2, TiB, etc. may be used, but are not limited thereto.
[0055] In one embodiment of the present invention, the unsintered ceramic powder may have a thermal expansion coefficient that is smaller than or equal to that of a ceramic material constituting the ceramic plate substrate.
[0056] In one embodiment of the present invention, the unsintered ceramic powder may have a thermal conductivity coefficient greater than or equal to that of a ceramic material constituting the ceramic plate substrate.
[0057] In one embodiment of the present invention, the micro-sintered ceramic powder may be arranged to have a thickness of, for example, 30 μm or more, but is not limited thereto, and various thicknesses may be applied as long as the thickness exhibits stress absorption capacity.
[0058]
[0059] The method for manufacturing a plate type heating device of the present invention has the following features:
[0060] An insertion groove forming step of forming a heat wire insertion groove (42) on a degreasing body (40) formed with a first ceramic powder;
[0061] A second ceramic powder filling step of filling a second ceramic powder (50) having a sintering temperature 50°C or higher than that of the first ceramic powder into the above-mentioned heating wire insertion groove (42);
[0062] A heating wire wiring step of placing a heating wire (20) in a heating wire insertion groove filled with the second ceramic powder (50);
[0063] A first ceramic lamination step of laminating a first ceramic powder on a degreasing body on which the above-mentioned heating wire (20) is wired, or laminating a degreasing body (44) formed with the first ceramic powder; and
[0064] A sintering step of sintering a laminate in which the first ceramic is laminated at a temperature higher than the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.
[0065] The above manufacturing method can be applied to all of the above-described aspects of a plate-type heating device. Therefore, descriptions of overlapping aspects are omitted.
[0066] As the first ceramic powder, Al2O3, AlN, ALON, etc. can be used, but are not limited thereto. In addition, as the second ceramic powder, oxide-based, carbide-based, nitride-based, or boride-based ceramics can be used, and preferably, MgO, WC, TaC, TiC, CNT, Graphene, SiC, SiC Whisker, BN, TiN, ZrB2, TiB, etc. can be used, but are not limited thereto.
[0067] In one embodiment of the present invention, the heating wire wiring step may be a step of placing the heating wire (20) on the filled second ceramic powder (50); placing the heating wire (20) so that it is partially buried in the second ceramic powder (50), as shown in (c) of FIG. 5; or placing the heating wire (20) so that it is entirely buried in the second ceramic powder (50), as shown in (c) of FIG. 6 and (c) of FIG. 7.
[0068] In one embodiment of the present invention, when the heating wire (20) is placed on the filled second ceramic powder (50) in the heating wire wiring step, or the heating wire (20) is placed so that a part of the heating wire (20) is buried in the second ceramic powder (50), a step of applying the second ceramic powder so that the entire heating wire (20) is covered by the second ceramic powder may be further performed before the first ceramic lamination step.
[0069] In one embodiment of the present invention, in the insertion groove forming step, the insertion groove (42) may be formed in a size in which one heating wire can be placed according to the heating wire arrangement configuration, as shown in FIGS. 5 and 6; may be formed in a size in which two or more heating wires can be placed per heating wire arrangement area, as shown in FIG. 8; or may be formed in a size in which all heating wires can be placed, as shown in FIG. 7.
[0070] In one embodiment of the present invention, when the first ceramic powder is applied and laminated on the degreased body on which the heating wire (20) is wired, the application process and the sintering process can be performed using a mold.
[0071] In one embodiment of the present invention, the temperature above the sintering temperature of the first ceramic and below the sintering temperature of the second ceramic may be 1,600 to 2,000°C, and preferably 1,650 to 1,750°C.
[0072] In the case of sintering as described above, the first ceramic powder or the degreased body formed with the first ceramic powder is sintered, while the second ceramic powder is not sintered and remains in a powder state, so that the stress generated by the expansion of the heat wire can be effectively absorbed.
[0073]
[0074] In one embodiment of the present invention, the plate type heating device (100) may be in the shape of a circular plate and may further include a power supply line for supplying power to the heating wire.
[0075] In one embodiment of the present invention, the plate-type heating device (100) may further include an RF electrode on the upper or lower surface of the heating wire. The RF electrode may be configured according to a technique known in the art.
[0076] In one embodiment of the present invention, the plate type heating device (100) may further include a hollow type support member (70) that is mounted on the lower portion of the plate type heating device (100) and supports the plate type heating device (100), as illustrated in FIG. 9. At this time, a power supply line (80) may be connected to the plate type heating device (100) through the hollow portion of the support member (70), and may be connected to the heating wire (20). The support member (70) may be manufactured according to a shape or configuration known in the art.
[0077] The plate-type heating device (100) of the present invention can be used, for example, in semiconductor manufacturing processes, and specifically, for performing processes such as thin film deposition and patterning. Accordingly, the device may further include a chamber that provides a space for performing the process. In addition, a showerhead may be further provided within the chamber. The chamber and showerhead may be configured in a form known in the art.
[0078] The plate type heating device (100) of the present invention can be equipped with any known devices or equipment equipped in a semiconductor device manufacturing device without limitation.
[0079]
[0080] Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims also fall within the scope of the present invention.
[0081] [Explanation of symbols]
[0082] 10: Ceramic plate base 20: Heating wire
[0083] 30: Micro-sintered ceramic powder 40: De-sintered body formed from the first ceramic powder
[0084] 42: Insertion groove 44: Degreased body formed with first ceramic powder
[0085] 50: Second ceramic powder 70: Support member
[0086] 80: Power supply line 100: Plate type heating device
Claims
1. Ceramic plate substrate, and It includes a heating wire embedded inside the above ceramic plate substrate, A plate type heating device in which micro-sintered ceramic powder is positioned between the outer peripheral portion of the above-mentioned heating wire and the ceramic plate substrate.
2. In paragraph 1, A plate type heating device characterized in that the above-mentioned microporous ceramic powder is positioned continuously or intermittently along the heating wire.
3. In paragraph 2, A plate type heating device characterized in that the above-mentioned micro-sintered ceramic powder is located only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the heating wire, or between the entire outer periphery and the ceramic substrate.
4. In paragraph 3, A plate type heating device characterized in that the outer peripheral portion is 20 to 90% of the outer peripheral portion based on the cross-section of the heating wire.
5. In paragraph 3, A plate type heating device characterized in that the outer peripheral portion is 50 to 90% of the outer peripheral portion based on the cross-section of the heating wire.
6. In paragraph 4, A plate type heating device characterized in that the unsintered ceramic powder is located only between a portion of the outer periphery and the ceramic substrate based on the cross-section of the heating wire, and the unsintered ceramic powder is filled from the bottom of the heating wire.
7. In paragraph 1, A plate type heating device characterized in that a ceramic plate substrate is placed between the above heating wires or unsintered ceramic powder is placed between the heating wires.
8. In paragraph 1, A plate type heating device characterized in that the above-mentioned micro-sintered ceramic powder is a material having a sintering temperature 50°C or higher than that of the ceramic material constituting the ceramic plate substrate.
9. In paragraph 8, A plate type heating device characterized in that the above unsintered ceramic powder has a thermal expansion coefficient smaller than or equal to that of the ceramic material constituting the ceramic plate substrate.
10. In paragraph 9, A plate type heating device characterized in that the above-mentioned micro-sintered ceramic powder has a thermal conductivity coefficient greater than or equal to that of the ceramic material constituting the ceramic plate substrate.
11. In paragraph 1, A plate type heating device characterized in that the above micro-sintered ceramic powder is arranged to have a thickness of 30㎛ or more.
12. Insertion groove forming step of forming a heat wire insertion groove on a degreasing body formed with the first ceramic powder; A second ceramic powder filling step of filling a second ceramic powder having a sintering temperature 50°C or higher than that of the first ceramic powder into the above-described heating wire insertion groove; A heating wire wiring step of placing a heating wire in a heating wire insertion groove filled with the second ceramic powder; A first ceramic lamination step of laminating a first ceramic powder on a degreasing body through which the above-mentioned heating wires are wired, or laminating a degreasing body formed with the first ceramic powder; and A method for manufacturing a plate-type heating device, comprising a sintering step of sintering a laminated body in which the first ceramic is laminated at a temperature higher than the sintering temperature of the first ceramic and lower than the sintering temperature of the second ceramic.
13. In paragraph 12, A method for manufacturing a plate-type heating device, characterized in that the above heating wire wiring step is a step of placing the heating wire on a filled second ceramic powder; placing the heating wire so that a portion of the heating wire is buried in the second ceramic powder; or placing the heating wire so that the entire heating wire is buried in the second ceramic powder.
14. In paragraph 13, A method for manufacturing a plate type heating device, characterized in that, in the above-mentioned heating wire wiring step, when the heating wire is placed on the second ceramic powder filled with the second ceramic powder or the heating wire is placed so that a portion of the heating wire is buried in the second ceramic powder, a step of applying the second ceramic powder so that the entire heating wire is covered by the second ceramic powder is further performed before the first ceramic lamination step.
15. In paragraph 12, A method for manufacturing a plate type heating device, characterized in that in the above insertion groove forming step, the insertion groove is formed in a size in which one heating wire can be placed according to the heating wire arrangement configuration; is formed in a size in which two or more heating wires can be placed per heating wire arrangement area; or is formed in a size in which all heating wires can be placed.
Citation Information
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