Substrate treatment system, substrate treatment method, program, and storage medium

Abstract

One example embodiment of the present invention provides a substrate treatment system. The substrate treatment system comprises a process module, a transport module, an imaging unit, an extraction unit, a calculation unit, and a transport control unit. The imaging unit has a field of view that includes a transport path for a substrate. The extraction unit is configured to extract a first feature pattern from an image of a substrate to which substrate treatment has been applied, and to extract a second feature pattern from said image. The calculation unit is configured to calculate, on the basis of the first feature pattern and the second feature pattern, the positional relationship between the position of a substrate support part and the position of the substrate while the substrate treatment is being performed. The transport control unit is configured to correct a transport position for the transport module on the basis of the positional relationship.

Description

SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, PROGRAM, AND STORAGE MEDIUM

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing system, a substrate processing method, a program, and a storage medium.

[0002] A substrate processing system is used to process a substrate. The substrate processing system disclosed in Patent Document 1 includes a process module and a transfer module. The process module includes a chamber and a substrate support disposed in the chamber. The transfer module transfers the substrate onto the substrate support. In the process module, substrate processing is performed on the substrate transferred onto the substrate support.

[0003] Japanese Patent Application Laid-Open No. 2003-264214

[0004] The present disclosure provides a technique for reducing deviation of a substrate's transport position relative to a substrate support.

[0005] In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a process module, a transfer module, an imaging unit, an extraction unit, a calculation unit, and a transfer controller. The process module has a chamber and a substrate support disposed within the chamber. The process module is configured to perform a substrate processing on a substrate on the substrate support. The transfer module is configured to transport the substrate to a transfer position on the substrate support. The imaging unit has a field of view including a transport path of the substrate. The imaging unit is configured to acquire an image of the substrate. The extraction unit is configured to extract a first feature pattern and a second feature pattern from the image of the substrate to which the substrate processing has been applied. The first feature pattern has a center that reflects a central position of the substrate. The second feature pattern has a center that reflects a central position of the substrate support during the substrate processing. The calculation unit is configured to calculate a positional relationship between a position of the substrate support and a position of the substrate during the substrate processing based on the first feature pattern and the second feature pattern. The transfer controller is configured to correct a transfer position relative to the transfer module based on the positional relationship.

[0006] According to one exemplary embodiment, misalignment of the substrate relative to the substrate support is reduced.

[0007] 5 is a diagram showing a substrate processing system according to an exemplary embodiment. FIG. 6 is a diagram for explaining an example of the configuration of a plasma substrate processing system. FIG. 7 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 8 is a top view of an electrostatic chuck according to an exemplary embodiment. FIG. 9 is a partially enlarged view of an exemplary embodiment of the electrostatic chuck shown in FIG. 4. FIG. 10 is a partially enlarged cross-sectional view of a substrate and an electrostatic chuck according to an exemplary embodiment. FIG. 11 is a cross-sectional view of a substrate inspection module according to an exemplary embodiment. FIG. 12 is a diagram showing an example of an image of a substrate to which substrate processing has been applied according to an exemplary embodiment. FIG. 13 is a diagram showing an example of an image of a substrate to which substrate processing has been applied according to another exemplary embodiment. FIG. 14 is a diagram showing an example of an image of a substrate to which substrate processing has been applied according to yet another exemplary embodiment. FIG. 15 is a diagram showing an example of a positional relationship between the center position of a substrate and the center position of a substrate support when substrate processing is performed. FIG. 16 is a diagram showing the configuration of an imaging unit according to another exemplary embodiment. FIG. 17 is a diagram showing an example of an image of a substrate to which substrate processing has been applied according to yet another exemplary embodiment. FIG. 18 is a diagram showing an example of a process for calculating a positional relationship between the position of a substrate and the position of a pattern. FIG. 19 is a diagram showing another example of a process for calculating a positional relationship between the position of a substrate and the position of a pattern. FIG. 19 is a flowchart showing a substrate processing method according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram showing a substrate processing system according to an exemplary embodiment. As shown in FIG. 1, the substrate processing system PS includes at least one transfer module, at least one process module, an imaging unit 60, and a transfer control unit CU. The substrate processing system PS may include a plurality of process modules PM1 to PM12 as the at least one process module, and may include a plurality of transfer modules TM1 and TM2 as the at least one transfer module. The substrate processing system PS may further include a substrate inspection module CM, load ports LP1 to LP4, an aligner AN, load lock modules LL1 and LL2, and a storage unit SR.

[0010] The substrate processing system PS may further include a loader module LM. The loader module LM includes a chamber. The pressure within the chamber of the loader module LM is set to atmospheric pressure. The loader module LM may include a fan filter unit (FFU). The loader module LM is, for example, an equipment front end module (EFEM). The loader module LM is disposed between each of the load ports LP1 to LP4 and each of the load lock modules LL1 and LL2. The load ports LP1 to LP4 are arranged along one of a pair of longitudinal edges of the loader module LM. The load lock modules LL1 and LL2 are arranged along the other of a pair of longitudinal edges of the loader module LM. Each of the load ports LP1 to LP4 is configured to support a cassette CST placed thereon. The cassette CST is a container that accommodates a plurality of substrates W. The cassette CST is, for example, a front-opening unified pod (FOUP).

[0011] The loader module LM includes a transport robot TR3. The transport robot TR3 is provided in a chamber of the loader module LM. The transport robot TR3 may include an articulated arm AR31 and a pick FK31. The pick FK31 is attached to the tip of the articulated arm AR31 and is configured to support a substrate W placed thereon. The transport robot TR3 transports the substrate W based on operation instructions output by a transport control unit CU, which will be described later. The transport robot TR3 transports the substrate W between any two of a cassette CST placed on at least one of the load ports LP1 to LP4, the load lock modules LL1 and LL2, the aligner AN, the storage SR, and a substrate inspection module CM, which will be described later.

[0012] The aligner AN is arranged along one of a pair of edges along the shorter direction of the loader module LM. The aligner AN may be arranged along an edge along the longer direction of the loader module LM. Alternatively, the aligner AN may be arranged inside a chamber of the loader module LM. The aligner AN includes a support table, an optical sensor, etc. The support table of the aligner AN is rotatable and supports the substrate W placed thereon. The aligner AN detects the angular position of a marker (e.g., a notch) of the substrate W on the support table and the center position of the substrate W on the support table using the optical sensor. The transport control unit CU controls the rotation of the support table of the aligner AN to correct the angular position of the marker (e.g., a notch) of the substrate W on the support table to a reference angular position so as to correct the amount of deviation of the angular position of the substrate W. Furthermore, the transport control unit CU controls the position of the pick FK31 when the pick FK31 receives the substrate W from the aligner AN, in order to position the center of the substrate W at a predetermined position on the pick FK31.

[0013] The storage SR is arranged along an edge along the longitudinal direction of the loader module LM. The storage SR may be arranged along an edge along the lateral direction of the loader module LM. Alternatively, the storage SR may be provided inside the loader module LM. The storage SR is configured to accommodate substrates W therein.

[0014] The substrate inspection module CM is disposed along an edge portion along the longitudinal direction of the loader module LM. The substrate inspection module CM may be disposed along an edge portion along the lateral direction of the loader module LM. The substrate inspection module CM may also be provided inside the loader module LM. In the example shown in FIG. 1 , the imaging unit 60 is included in the substrate inspection module CM. The substrate inspection module CM is configured to perform image inspection on the substrate W. Details of the substrate inspection module CM will be described later.

[0015] Each of the load lock modules LL1 and LL2 is disposed between the transfer module TM1 and the loader module LM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber. Each of the load lock modules LL1 and LL2 and the loader module LM are connected via a gate valve G3. Each of the load lock modules LL1 and LL2 and the transfer module TM1 are connected via a gate valve G2.

[0016] In one embodiment, each of the transfer modules TM1 and TM2 may include a chamber. In the example shown in FIG. 1 , each of the transfer modules TM1 and TM2 is configured to transfer a substrate W through a depressurized space within the chamber. The chamber of the transfer module TM1 is connected to each of the load lock modules LL1 and LL2 via a gate valve G2. The chamber of the transfer module TM1 is connected to the process modules PM1 to PM6 via a gate valve G1. The chamber of the transfer module TM1 is connected to the chamber of the transfer module TM2. The chamber of the transfer module TM2 is connected to the process modules PM7 to PM12 via the gate valve G1.

[0017] In one embodiment, the transport module TM1 may include a transport robot TR1 provided within its chamber. The transport robot TR1 may include articulated arms AR11, AR12 and picks FK11, FK12. The pick FK11 is attached to the tip of the articulated arm AR11 and configured to support a substrate W placed thereon. The pick FK12 is attached to the tip of the articulated arm AR12 and configured to support a substrate W placed thereon. The transport robot TR1 transports the substrate W based on operation instructions output by a transport control unit CU (described later). The transport robot TR1 holds the substrate W using the picks FK11, FK12. The transport robot TR1 transports the substrate W between any two of the load lock modules LL1, LL2, process modules PM1 to PM6, the chambers of the transport module TM1, and the paths between the chambers of the transport modules TM1 and TM2.

[0018] In one embodiment, the transport module TM2 includes a transport robot TR2 provided in its chamber. The transport robot TR2 may include articulated arms AR21, AR22 and picks FK21, FK22. The pick FK21 is attached to the tip of the articulated arm AR21 and is configured to support a substrate W placed thereon. The pick FK22 is attached to the tip of the articulated arm AR22 and is configured to support a substrate W placed thereon. The transport robot TR2 transports the substrate W based on operation instructions output by a transport control unit CU, which will be described later. The transport robot TR2 holds the substrate W using the picks FK21, FK22. The transport robot TR2 transports the substrate W between the path between the chamber of the transport module TM1 and the chamber of the transport module TM2, any two of the process modules PM7 to PM12, and the chamber of the transport module TM2.

[0019] In one embodiment, each of the process modules PM1 to PM12 is configured to perform a dedicated process on a substrate W. At least one of the process modules PM1 to PM12 is a substrate processing system such as the plasma processing apparatus 1 described below.

[0020] The transfer control unit CU is, for example, a computer. The transfer control unit CU may be composed of a central processing unit (CPU), a random access memory (RAM), a read-only memory (ROM), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls each part of the substrate processing system PS.

[0021] The substrate processing system PS is not necessarily limited to that shown in FIG. 1 . For example, the number of process modules and / or the number of transfer modules in the substrate processing system may be different from that shown in FIG. 1 . For example, the number of load ports may be five or more, or any number of load ports may be used. The substrate processing system may also be a system (a so-called loader-type system) in which a plurality of module groups, each including a process module and a load lock module, are connected to a loader module. The substrate processing system may also be a system (a so-called cluster-type system) in which two or more process modules are connected in a row around a transfer module so as to surround the transfer module.

[0022] 2 and 3 will be referred to below. The plasma processing system shown in Fig. 2 is an example of a substrate processing system PS. The example of the plasma processing apparatus shown in Fig. 3 is employed as at least one of the process modules PM1 to PM12.

[0023] FIG. 2 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing system. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface 11a for supporting a substrate.

[0024] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0025] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0026] The substrate processing system PS includes an extraction unit 2b1 and a calculation unit 2b2. In the example shown in FIG. 2, the extraction unit 2b1 and the calculation unit 2b2 are included in a processing unit 2a1. The extraction unit 2b1 and the calculation unit 2b2 will be described in detail later. The extraction unit 2b1 and the calculation unit 2b2 may be included in a transport control unit CU. The control unit 2 may also serve as the transport control unit CU.

[0027] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 3 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0028] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0029] The substrate support 11 includes a main body 5 and a ring assembly 112. The main body 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 5b of the main body 5 surrounds the central region 5a of the main body 5 in a plan view. The substrate W is placed on the central region 5a of the main body 5, and the ring assembly 112 is placed on the annular region 5b of the main body 5 so as to surround the substrate W on the central region 5a of the main body 5. Thus, the central region 5a includes a substrate support surface 11a that supports the substrate W placed thereon, and the annular region 5b includes a ring support surface that supports the ring assembly 112 placed thereon.

[0030] In one embodiment, the main body 5 includes a base 50 and an electrostatic chuck 51. The base 50 includes a conductive member. The conductive member of the base 50 may function as a lower electrode. The electrostatic chuck 51 is disposed on the base 50. The electrostatic chuck 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed within the ceramic member 51a. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Note that another member surrounding the electrostatic chuck 51, such as the annular electrostatic chuck or an annular insulating member, may also have the annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 51 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 (described later) may be disposed within the ceramic member 51a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. The conductive member of the base 50 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 51b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0031] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0032] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 51, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 50a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 50a. In one embodiment, the flow passage 50a is formed in the base 50, and one or more heaters are disposed in the ceramic member 51a of the electrostatic chuck 51. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 5a.

[0033] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0034] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0035] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0036] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0037] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0038] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0039] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0040] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0041] Reference will now be made to Figures 4 to 6. Figure 4 is a top view of an electrostatic chuck according to one example embodiment. Figure 5 is a partial enlarged view of one example embodiment of the electrostatic chuck shown in Figure 4. Figure 6 is a partial enlarged cross-sectional view of a substrate and an electrostatic chuck according to one example embodiment.

[0042] In one embodiment, the electrostatic chuck 51 may include a first protrusion 51c (or a seal ring) and a plurality of second protrusions 51d (or dot portions). The first protrusion 51c and the plurality of second protrusions 51d are included in the surface structure of the electrostatic chuck 51. The first protrusion 51c has a ring shape. The first protrusion 51c has an upper surface that constitutes a part of the substrate support surface 11a. As shown in FIGS. 4 and 6, the first protrusion 51c may have a ring shape that follows the outer edge of the substrate support surface 11a. In this case, the pattern of the first protrusion 51c is a ring shape that follows the outer edge of the substrate support surface 11a.

[0043] Each of the multiple second protrusions 51d has an upper surface that constitutes a part of the substrate support surface 11a. The multiple second protrusions 51d are arranged inside the first protrusions 51c. In the example shown in FIG. 4, the multiple second protrusions 51d are arranged inside the outer edge of the substrate support surface 11a. Note that the multiple second protrusions 51d are not shown in FIG. 4. As shown in FIG. 5, the multiple second protrusions 51d may form a pattern centered at the center position 11c of the substrate support portion 11. In the example shown in FIG. 5, the multiple second protrusions 51d are arranged at approximately equal intervals along a circumference centered at the center position 11c of the substrate support portion 11. The multiple second protrusions 51d may be arranged along multiple concentric circles centered at the center position 11c of the substrate support portion 11, or along multiple concentric polygons centered at the center position 11c of the substrate support portion 11.

[0044] In one embodiment, the substrate support 11 may include a plurality of gas holes 5c. The plurality of gas holes 5c are included in the surface structure of the electrostatic chuck 51. In the example shown in FIG. 4 , the plurality of gas holes 5c includes 12 gas holes 5c. The plurality of gas holes 5c communicate with the gap between the substrate W and the electrostatic chuck 51. The gap between the substrate W and the electrostatic chuck 51 corresponds to the gap between the back surface of the substrate W and the central region 5a described above. In one example, each of the plurality of gas holes 5c is formed by a through-hole in the electrostatic chuck 51 and a through-hole in the base 50 that communicate with each other. The heat transfer gas supply unit may be configured to supply a heat transfer gas to the gap between the substrate W and the electrostatic chuck 51 via the plurality of gas holes 5c.

[0045] As shown in Fig. 4, the plurality of gas holes 5c may form a pattern whose center is the central position 11c of the substrate support 11. In the example shown in Fig. 4, the plurality of gas holes 5c are arranged at the vertices of a hexagon whose center is the central position 11c of the substrate support 11. In this case, the pattern of the plurality of gas holes 5c includes a hexagon. More specifically, six of the twelve gas holes 5c are arranged at the vertices of a first regular hexagon, and another six of the twelve gas holes 5c are arranged at the vertices of a second regular hexagon located inside the first regular hexagon.

[0046] In one embodiment, the substrate support portion 11 may include a plurality of pin holes 5d into which a plurality of lifter pins for the substrate W are inserted. The plurality of pin holes 5d are included in the surface structure of the electrostatic chuck 51. In the example shown in Fig. 4, the plurality of pin holes 5d is composed of three pin holes 5d. In one example, each of the plurality of pin holes 5d is composed of a through-hole of the electrostatic chuck 51 and a through-hole of the base 50 that are connected to each other. A lifter pin configured to be able to lift and lower the substrate W is inserted into each of the plurality of pin holes 5d.

[0047] As shown in Fig. 4, the multiple pin holes 5d may form a regular pattern centered at the central position 11c of the substrate support part 11. In the example shown in Fig. 4, the multiple pin holes 5d are arranged at the vertices of an equilateral triangle centered at the central position 11c of the substrate support part 11. In this case, the pattern of the multiple pin holes 5d includes a triangle.

[0048] As described above, the plasma processing apparatus 1 is configured to perform substrate processing on a substrate W placed on the substrate support 11. In one example, the substrate support 11, the electrostatic chuck 51, and the substrate W are disk-shaped. The substrate processing may be an etching process or a process for forming a deposit on the surface of the substrate W (e.g., a plasma CVD method). In the example shown in FIG. 6 , a pattern of deposits Wa formed on the upper surface of the substrate W by the substrate processing and a pattern of deposits Wb formed on the lower surface of the substrate W by the substrate processing are shown. The pattern of deposits Wb has an inner edge on the lower surface of the substrate W that is inward relative to the edge of the substrate W.

[0049] The substrate W is transported to the transport position on the substrate support unit 11 by the transport module TM1 or TM2. Then, in the plasma processing apparatus 1, substrate processing is performed on the substrate W on the electrostatic chuck 51. In one embodiment, the substrate W to which the substrate processing has been applied is transported from the transport position on the substrate support unit 11 to the substrate inspection module CM by the transport module TM1 or TM2.

[0050] Reference will now be made to FIG. 7 , which is a cross-sectional view of a substrate inspection module according to an exemplary embodiment. In the example shown in FIG. 7 , the substrate inspection module CM includes a housing 6. As shown in FIG. 7 , the substrate inspection module CM may further include an imaging unit 60, a substrate chuck 61, a guide rail 62, a light source 63, and a half mirror 64. Each of the imaging unit 60, the substrate chuck 61, the guide rail 62, the light source 63, and the half mirror 64 is disposed within the housing 6.

[0051] The substrate chuck 61 is configured to support a substrate W placed thereon. The substrate chuck 61 is disposed on a guide rail 62. The guide rail 62 is configured to move the substrate chuck 61, which supports the substrate W, within the housing 6. In the example shown in FIG. 7 , the guide rail 62 is configured to move the substrate W supported by the substrate chuck 61 along a transport path P from a first position 6 a to a second position 6 b. The first position 6 a is adjacent to one end of the guide rail 62. The second position 6 b is adjacent to the other end of the guide rail 62. In one example, the distance between the first position 6 a and the second position 6 b is at least equal to or greater than the diameter of the substrate W. The transport path P for the substrate W may be along a straight line connecting one end of the guide rail 62 to the other end of the guide rail 62.

[0052] The imaging unit 60 has a field of view that includes the transport path P of the substrate W. The imaging unit 60 is configured to acquire an image of the substrate W. In one embodiment, the imaging unit 60 may be a line scan camera. The direction of the transport path P in the field of view of the imaging unit 60 and the longitudinal direction of the line scan camera are perpendicular to each other. In the example shown in FIG. 7 , the imaging unit 60 acquires an image of the substrate W by acquiring light L emitted from a light source 63 and reflected by the upper surface of the substrate W via a half mirror 64. The light source 63 and the half mirror 64 may be disposed above the transport path P. The imaging unit 60 may be disposed to face the half mirror 64 in the horizontal direction. In one example, the light source 63 irradiates light L onto the substrate W moving along the transport path P from the first position 6a to the second position 6b. The light L reflected by the upper surface of the substrate W is reflected horizontally by the half mirror 64. The light L reflected horizontally by the half mirror 64 is received by the imaging unit 60.

[0053] Reference will now be made to Figures 8 to 10. Figure 8 is a diagram schematically illustrating an image of a substrate to which a substrate treatment has been applied according to one exemplary embodiment. Figure 9 is a diagram schematically illustrating an image of a substrate to which a substrate treatment has been applied according to another exemplary embodiment. Figure 10 is a diagram schematically illustrating an image of a substrate to which a substrate treatment has been applied according to yet another exemplary embodiment.

[0054] The extraction unit 2b1 is configured to extract a first feature pattern and a second feature pattern from an image of a substrate W that has been subjected to substrate processing. In the example shown in Fig. 8, the extraction unit 2b1 is configured to extract a first feature pattern 71 and a second feature pattern 72 from an image 7 of a substrate W that has been subjected to substrate processing. Hereinafter, an exemplary embodiment for extracting the first feature pattern 71 and the second feature pattern 72 from image 7 will be described with reference to Fig. 8.

[0055] The first feature pattern 71 has its center reflecting the central position of the substrate W. In one embodiment, the first feature pattern 71 may reflect the edge 70 of the substrate W. In one example, the extraction unit 2b1 extracts the first feature pattern 71 from the difference in brightness between the background BK of the substrate W and the edge 70 in the image 7. In one embodiment, the extraction unit 2b1 may extract the first feature pattern 71 by binarizing the image 7. By binarizing, the pixel values ​​of the region of the background BK of the substrate W in the image 7 are converted to values ​​different from the pixel values ​​of the region of the substrate W in the image 7, and therefore the edge 70 of the substrate W can be extracted as the first feature pattern 71 from the binarized image.

[0056] The second feature pattern 72 has a center that reflects the central position 11c of the substrate support 11 during substrate processing. In an embodiment, the second feature pattern 72 may reflect a pattern of the surface structure of the electrostatic chuck 51. The second feature pattern 72 may have a center that reflects the central position of the electrostatic chuck 51 during substrate processing. In an embodiment, the extractor 2b1 may be configured to extract the second feature pattern 72 based on a difference between the image 7 and an image obtained by performing a blurring process on the image 7. The blurring process is a process of averaging one pixel of multiple pixels that make up the image and pixels adjacent to the one pixel.

[0057] In one embodiment, the second feature pattern 72 may reflect the pattern of the first protrusions 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72 may reflect the pattern of deposits Wa formed on the upper surface of the substrate W. A temperature difference may occur between a first region of the substrate W located on the first protrusions 51c and / or the plurality of second protrusions 51d and a second region of the substrate W not located on the first protrusions 51c and / or the plurality of second protrusions 51d. A difference in the amount of deposits Wa formed on the upper surface of the first region and the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72 may reflect the difference in the amount of deposits Wa. In the example shown in FIG. 8 , the second feature pattern 72 reflects the pattern of deposits Wa formed on the upper surface of the substrate W so as to reflect the pattern 751d of the plurality of second protrusions 51d.

[0058] Calculation unit 2b2 is configured to calculate, based on the first feature pattern and the second feature pattern, the positional relationship between the position of substrate support 11 during substrate processing and the position of the substrate W. In the example shown in Fig. 8, calculation unit 2b2 is configured to calculate, based on first feature pattern 71 and second feature pattern 72, the positional relationship between the position of substrate support 11 during substrate processing and the position of the substrate W.

[0059] In one embodiment, the calculator 2b2 may be configured to calculate the positional relationship between the center position 11c of the substrate support 11 and the center position of the substrate W during substrate processing, based on the first center position 71a identified from the first feature pattern 71 and the second center position 72a identified from the second feature pattern 72. In one example, since the first feature pattern 71 reflects the edge 70 of the substrate W, the center position of the substrate W is calculated as the first center position 71a identified from the first feature pattern 71.

[0060] 8, the second feature pattern 72 reflects a pattern 751d of a plurality of second convex portions 51d, and is arranged at approximately equal intervals along a circle having a center that reflects the center position 11c of the substrate support portion 11 during substrate processing. Therefore, the center position 11c of the substrate support portion 11 during substrate processing is calculated as the second center position 72a, which is the center position of the circle.

[0061] 9, another exemplary embodiment for extracting a first feature pattern 71 and extracting a second feature pattern 72A and / or a second feature pattern 72B from an image 7A will be described below in terms of differences from the above-described exemplary embodiment for extracting the first feature pattern 71 and the second feature pattern 72 from an image 7A.

[0062] The second feature pattern 72A may reflect the pattern of the plurality of gas holes 5c of the electrostatic chuck 51. A temperature difference may occur between a first region of the substrate W located above the plurality of gas holes 5c and a second region not located above the plurality of gas holes 5c. A difference in the amount of deposit Wa formed on the upper surface of the first region and that of the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72A may reflect the difference in the amount of deposit Wa. In the example shown in FIG. 9 , the second feature pattern 72A reflects the pattern of deposit Wa formed on the upper surface of the substrate W so as to reflect the pattern 75c of the plurality of gas holes 5c.

[0063] 9, the second feature pattern 72A reflects a pattern 75c of the plurality of gas holes 5c and is arranged at the vertices of a hexagon having a center that reflects the center position 11c of the substrate support 11 during substrate processing. In one example, the hexagon is a regular hexagon. The center position 11c of the substrate support 11 during substrate processing is calculated as a second center position 72a, which is the center position of the hexagon.

[0064] In one embodiment, the second feature pattern 72B may reflect the pattern of the pin holes 5d of the electrostatic chuck 51. A temperature difference may occur between a first region of the substrate W located over the pin holes 5d and a second region not located over the pin holes 5d. A difference in the amount of deposit Wa formed on the upper surface of the first region and the amount of deposit Wa formed on the upper surface of the second region may occur depending on the temperature difference. Therefore, the second feature pattern 72B may reflect the difference in the amount of deposit Wa. In the example shown in FIG. 9 , the second feature pattern 72B reflects the pattern of deposit Wa formed on the upper surface of the substrate W so as to reflect the pattern 75d of the pin holes 5d.

[0065] 9, the second feature pattern 72B reflects a pattern 75d of a plurality of pinholes 5d and is located at the vertices of a triangle having a center that reflects the center position 11c of the substrate support 11 during substrate processing. In one example, the triangle is an equilateral triangle. The center position 11c of the substrate support 11 during substrate processing is calculated as the second center position 72a, which is the center position of the triangle.

[0066] 10 , a further exemplary embodiment in which a first feature pattern 71 and a second feature pattern 72C are extracted from an image 7C will be described below in terms of differences from the above-described exemplary embodiment in which the first feature pattern 71 and the second feature pattern 72C are extracted from an image 7C.

[0067] The second feature pattern 72C may reflect the pattern of the first protrusions 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72C may reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a substrate processing. In the substrate W, a temperature difference may occur between a first region located on the first protrusions 51c and / or the plurality of second protrusions 51d and a second region not located on the first protrusions 51c and / or the plurality of second protrusions 51d. A difference in etching rate may occur between the first region and the second region depending on the temperature difference. Therefore, the second feature pattern 72C may reflect a difference in the amount of etching processing. In the example shown in FIG. 10 , the second feature pattern 72C reflects a pattern formed on the upper surface of the substrate W by the etching process so as to reflect the pattern 751c of the first protrusions 51c.

[0068] In the example shown in FIG. 10 , the second feature pattern 72C reflects the pattern 751c of the first convex portion 51c and has a ring shape with its center reflecting the center position 11c of the substrate support portion 11 during substrate processing. The pattern 751c of the first convex portion 51c may have a ring shape that follows the outer edge of the substrate support surface 11a, and the second feature pattern 72C may reflect this ring shape. The center position 11c of the substrate support portion 11 during substrate processing is calculated as the second center position 72a, which is the center position of the ring shape of the second feature pattern 72C. Note that the center position 11c of the substrate support portion 11 during substrate processing may be calculated from the second feature pattern 72C that reflects the patterns of multiple second convex portions 51d instead of or in addition to the pattern of the first convex portion 51c.

[0069] 11 is a diagram showing an exemplary embodiment illustrating the positional relationship between the center position of the substrate and the center position of the pattern. The transport controller CU is configured to correct the transfer positions of the transport modules TM1 and TM2 based on the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing. In one embodiment, the transport controller CU may be configured to correct the transfer positions of the transport modules TM1 and TM2 based on the positional relationship between the center position 11c of the substrate support 11 and the center position of the substrate W during substrate processing. In one example, the transport controller CU is configured to correct the transfer positions of the transport modules TM1 and TM2 so that the center position 11c of the substrate support 11 and the center position of the substrate W overlap during substrate processing.

[0070] 11 shows the position of the second center position 72a in an XY Cartesian coordinate system with the first center position 71a as its center. In the X-axis direction, the second center position 72a is shifted by X1 from the first center position 71a. In the Y-axis direction, the second center position 72a is shifted by Y1 from the first center position 71a. In this case, the transfer control unit CU may correct the transfer position on the substrate support unit 11 by X1 in the X-axis direction and by Y1 in the Y-axis direction.

[0071] 12 is a diagram showing the configuration of an imaging unit according to another exemplary embodiment. The substrate inspection module CM may include an imaging unit 65. The imaging unit 65 has a field of view that includes the edge of the substrate W. The imaging unit 65 is configured to acquire an image of the substrate W. In the example shown in FIG. 12, the imaging unit 65 is disposed below the substrate W supported by the substrate chuck 61.

[0072] The substrate chuck 61 is configured to be able to rotate the substrate W supported thereon. In the example shown in Fig. 12, the substrate chuck 61 rotates the substrate W supported thereon clockwise when viewed from above. The imaging unit 65 may have a field of view that is able to image a portion of the edge of the substrate W. In one example, the imaging unit 65 may be a line scan camera. The longitudinal direction of the line scan camera is perpendicular to the tangential direction of the substrate W. In this case, the substrate W is rotated by the substrate chuck 61, so that the imaging unit 65 can include the entire circumference of the edge of the substrate W in its field of view.

[0073] FIG. 13 is a diagram schematically illustrating an image of a substrate according to yet another exemplary embodiment to which substrate processing is applied. Image 7D shown in FIG. 13 is an image acquired by the imaging unit 65 of a substrate W rotating on a substrate chuck 61. In image 7D, the image of the substrate W is acquired in a strip shape. Hereinafter, with reference to FIG. 13 , yet another exemplary embodiment in which a first feature pattern 71 and a second feature pattern 72D are extracted from image 7D will be described. In the following description, this yet another exemplary embodiment will be described from the perspective of differences from the above-described exemplary embodiment in which the first feature pattern 71 and the second feature pattern 72 are extracted from image 7D.

[0074] In one embodiment, the second feature pattern 72D may reflect the pattern of deposits Wb. The deposits Wb are formed on the underside of the substrate W by substrate processing. As described above, the pattern of deposits Wb has an inner edge on the underside of the substrate W that is inward relative to the edge of the substrate W. This inner edge may be reflected on the underside of the substrate W by the outer edge of the first convex portion 51c during substrate processing. In one embodiment, the extractor 2b1 may be configured to extract the second feature pattern 72D by subtracting the image 7D from the image of the substrate W before the substrate processing is applied.

[0075] The substrate W may have a notch Wn at the edge of the substrate W. The notch Wn may be, for example, a notch (a U-shaped, V-shaped groove, etc.). As shown in Fig. 13 , the imaging unit 65 acquires an image 7Wn of the notch Wn as part of an image 7D. The imaging unit 65 acquires an image 7D of the entire periphery of the edge of the substrate W, using the image 7Wn of the notch Wn as a reference.

[0076] Fig. 14 is a diagram showing an example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern. Image 7E shown in Fig. 14 is an image obtained by converting image 7D so that the substrate W in image 7D has a circular shape. Fig. 15 is a diagram showing another example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern.

[0077] In one embodiment, calculator 2b2 may be configured to determine the distance between the inner edge of second feature pattern 72D and edge 70 of first feature pattern 71 in each of three or more radial directions about edge 70 of first feature pattern 71. Calculator 2b2 may be configured to calculate, from the distance in each of the three or more radial directions, the positional relationship between the position of substrate support 11 and the position of substrate W during substrate processing.

[0078] In the example shown in FIG. 14 , the calculation unit 2b2 is configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of eight radial directions of the edge 70. The eight radial directions are radial direction D1, radial direction D2, radial direction D3, radial direction D4, radial direction D5, radial direction D6, radial direction D7, and radial direction D8. The angle between any two adjacent radial directions among the eight radial directions D1 to D8 is 45 degrees. The radial direction D1 and the radial direction D5 are 180 degrees opposite each other. The radial direction D5 is a position corresponding to the image 7Wn of the cutout portion Wn. The radial direction D2 and the radial direction D6 are 180 degrees opposite each other. The radial direction D3 and the radial direction D7 are 180 degrees opposite each other. The radial direction D4 and the radial direction D8 are 180 degrees opposite each other.

[0079] In one embodiment, the calculation unit 2b2 may be configured to calculate an average distance between an inner edge of the second feature pattern 72D and an edge 70 of the first feature pattern 71. In the example shown in Fig. 14, the calculation unit 2b2 may be configured to calculate the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 from each of the radial directions D2, D4, D6, and D8. The transfer control unit CU may be configured to correct the transfer position of the transfer module TM based on the average distance.

[0080] 15 is a diagram showing another example of a process for calculating the positional relationship between the position of the substrate and the position of the pattern. In one embodiment, the calculation unit 2b2 may be configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of three or more radial directions. The calculation unit 2b2 may calculate a first angle and a second angle. The first angle is an angle between a first radial direction and a second radial direction different from the first radial direction, among the three or more radial directions. The second angle is an angle between the second radial direction and a third radial direction different from the second radial direction. The calculation unit 2b2 may calculate a sine wave function using the distances in each of the three or more radial directions, the first angle, and the second angle. The sine wave function interpolates the distance between the inner edge and the edge in the radial direction within the first angle, and the distance between the inner edge and the edge in the radial direction within the second angle. The calculation unit 2b2 may be configured to correct the distance in each of the three or more radial directions using the sine wave function.

[0081] In the example shown in Fig. 15, calculation unit 2b2 is configured to calculate the distance between the inner edge of second feature pattern 72D and edge 70 of first feature pattern 71 in each of radial directions D1 to D4 and D6 to D8. Nos. 1 to 4 and 6 to 8 in Fig. 15 indicate the distance in each of radial directions D1 to D4 and D6 to D8. Note that the distance in radial direction D5 is not measured because it interferes with image 7Wn of cutout portion Wn.

[0082] 15 , the angle between two adjacent radial directions among the eight radial directions D1 to D8 is 45 degrees. As a result, the calculator 2b2 calculates a sine wave function based on the distance in each of the radial directions D1 to D4 and D6 to D8 and the 45-degree angle. In one example, the calculator 2b2 may calculate the sine wave function using the least squares method from the distance in each of the radial directions D1 to D4 and D6 to D8 and the 45-degree angle. The distance in each of the radial directions D1 to D4 and D6 to D8 can be corrected by the sine wave function. The calculator 2b2 may be configured to calculate the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing, based on the corrected distance and the 45-degree angle.

[0083] 16 is a flow chart showing a substrate processing method according to one exemplary embodiment. An example of performing the substrate processing method (hereinafter referred to as "method MT") will be described below with reference to FIG. 16. The method MT is performed using a substrate processing system PS. The control of each component and part of the substrate processing system PS in the method MT will also be described below. It should be noted that the method MT may also be performed using a substrate processing system other than the substrate processing system PS.

[0084] The method MT starts with step ST1, in which a substrate W is transferred to a transfer position on a substrate support 11 arranged in the chamber 10. In one example, the transfer control unit CU may be configured to control the transfer modules TM1 and TM2 so that the substrate W is transferred to the transfer position on the substrate support 11 arranged in the chamber 10.

[0085] Process ST2 is performed after process ST1. In process ST2, substrate processing is performed on the substrate W on the substrate support 11. In one example, the substrate processing may be an etching process or a process of forming a deposit on the surface of the substrate W.

[0086] The process ST3 is performed after the process ST2. In the process ST2, the substrate W to which the substrate processing has been applied is transported from the transport position. In one example, the transport control unit CU may be configured to control the transport modules TM1 and TM2 so that the substrate W to which the substrate processing has been applied is transported from the transport position.

[0087] Step ST4 is performed after step ST3. In step ST4, an image of the substrate W being transported along the transport path P is acquired. In one embodiment, the imaging unit 60 may be configured to acquire an image of the substrate W being transported along the transport path P in the substrate inspection module CM.

[0088] Step ST5 is performed after step ST4. In step ST5, a first feature pattern 71 having a center reflecting the central position of the substrate W is extracted from an image of the substrate W to which the substrate processing has been applied, and a second feature pattern 72 having a center reflecting the central position 11c of the substrate support 11 at the time of execution of the substrate processing is extracted. In one example, the extraction unit 2b1 may extract the first feature pattern 71 having a center reflecting the central position of the substrate W from any of the images 7, 7A, 7B, 7C, and 7D of the substrate W to which the substrate processing has been applied. In one example, the extraction unit 2b1 may be configured to extract at least one of the second feature patterns 72, 72A, 72B, 72C, and 72D having a center reflecting the central position 11c of the substrate support 11 at the time of execution of the substrate processing from the image of the substrate W to which the substrate processing has been applied.

[0089] Step ST6 is performed after step ST5. In step ST6, a positional relationship between the position of the substrate support part 11 and the position of the substrate W during substrate processing is calculated based on the first feature pattern 71 and the second feature pattern 72. In one example, the calculation unit 2b2 may be configured to calculate the positional relationship between the position of the substrate support part 11 and the position of the substrate W during substrate processing based on the first feature pattern 71 and at least one of the second feature patterns 72, 72A, 72B, 72C, and 72D. In one embodiment, in step ST6, a positional relationship between a first center position 71a identified from the first feature pattern 71 and a second center position 72a identified from any one of the second feature patterns 72, 72A, 72B, 72C, and 72D may be calculated.

[0090] In one embodiment, steps ST7, ST8, ST9, and ST10 may be performed. Step ST7 is performed after step ST6. In step ST7, it is determined whether the difference between the position of the substrate support 11 and the position of the substrate W during substrate processing (hereinafter referred to as the "position difference") is greater than or equal to a first threshold. If it is determined that the position difference is greater than or equal to the first threshold, the transport modules TM1 and TM2 are controlled not to transport the substrate W to the transport position. The position difference may be the difference between the center position 11c of the substrate support 11 and the center position of the substrate W during substrate processing. In the example shown in FIG. 11 , the position difference may be the square root of the sum of the squares of X1 and Y1.

[0091] In one example, the transport controller CU may be configured to determine whether the position difference is greater than or equal to a first threshold value, and to control the transport modules TM1 and TM2 not to transport the substrate W to the transport position when the position difference is greater than or equal to the first threshold value.

[0092] In one embodiment, if it is determined that the position difference is greater than or equal to the first threshold, then step ST9 may be performed. In step ST9, a warning is issued. In one example, the transport control unit CU may issue a warning indicating that the position difference is greater than or equal to the first threshold and therefore the transport of the substrate W to the transport position is stopped. After step ST9, the method MT may end.

[0093] In one embodiment, if it is determined that the position difference is not greater than the first threshold or not equal to or greater than the first threshold, then process ST10 may be performed. In process ST10, it is determined whether the position difference is less than the second threshold or not equal to or less than the second threshold. If the position difference is less than the second threshold or not equal to or less than the second threshold, the transport module is controlled to transport the substrate W to the transport position without correcting the transport position, and then the method MT may end. In one example, the transport control unit CU may be configured to control the transport modules TM1 and TM2 to transport the substrate W to the transport position without correcting the transfer position if the position difference is less than the second threshold or not equal to or less than the second threshold.

[0094] In one embodiment, if it is determined that the position difference is not less than the second threshold or not equal to or less than the second threshold, then process ST11 may be performed. In process ST11, the transfer position is corrected based on the positional relationship. The transfer modules TM1 and TM2 are controlled to transfer the substrate W to the corrected transfer position, after which the method MT may end. In one example, the transfer control unit CU may be configured to correct the transfer position based on the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing.

[0095] It should be noted that, when a plurality of substrates W are processed, the method MT may be performed on some of the substrates W. For example, the method MT may be performed each time a predetermined number of substrates W or two or more substrates W are successively processed. The correction of the transport position may be applied to the substrate W that is processed after the method MT has been performed. In the method MT, the substrate W may be a dummy substrate. For example, the method MT may be performed on the dummy substrate each time a predetermined number of substrates W or two or more substrates W are successively processed. The correction of the transport position may be applied to the substrate W that is processed after the method MT has been performed on the dummy substrate. The method MT may be performed on the dummy substrate to check or correct the transport position during setup of the substrate processing system PS or maintenance of the substrate processing system PS.

[0096] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0097] The substrate processing system PS does not have to include a substrate inspection module CM. The imaging unit does not have to be included in the substrate inspection module CM. The imaging unit only needs to be arranged so that the transport path of the substrate W is included in its field of view. The imaging unit may be included in any of the load ports LP1 to LP4, the aligner AN, the load lock modules LL1 and LL2, and the storage SR. The imaging unit may be arranged in the chamber of the loader module LM. The imaging unit may be arranged in the chamber of the transport module TM1 or the chamber of the transport module TM2.

[0098] The second feature pattern 72 shown in Fig. 8 may reflect the pattern of the multiple second protrusions 51d of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a substrate processing. The second feature pattern 72A shown in Fig. 9 may reflect the pattern of the multiple gas holes 5c of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a substrate processing. The second feature pattern 72B shown in Fig. 9 may reflect the pattern of the multiple pin holes 5d of the electrostatic chuck 51 and may also reflect a pattern formed on the upper surface of the substrate W by an etching process, which is a substrate processing. The second feature pattern 72C shown in Fig. 10 may reflect the pattern of the first protrusions 51c of the electrostatic chuck 51 and may also reflect a pattern of deposits Wa formed on the upper surface of the substrate W.

[0099] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E20] below.

[0100] [E1] A substrate processing system comprising: a process module having a chamber and a substrate support part disposed within the chamber, the process module being configured to perform substrate processing on a substrate on the substrate support part; a transport module being configured to transport the substrate to a transport position on the substrate support part; an imaging part having a field of view including a transport path of the substrate, and configured to acquire an image of the substrate; an extraction part configured to extract, from the image of the substrate to which the substrate processing has been applied, a first feature pattern having a center that reflects a central position of the substrate, and to extract a second feature pattern having a center that reflects a central position of the substrate support part at the time of performing the substrate processing; a calculation part configured to calculate a positional relationship between a position of the substrate support part and a position of the substrate at the time of performing the substrate processing, based on the first feature pattern and the second feature pattern; and a transport control part configured to correct the transport position for the transport module based on the positional relationship.

[0101] [E2] The substrate processing system described in [E1], wherein the calculation unit is configured to calculate a positional relationship between the center position of the substrate support part and the center position of the substrate during execution of the substrate processing, based on a first center position identified from the first feature pattern and a second center position identified from the second feature pattern.

[0102] [E3] The substrate processing system according to [E1] or [E2], wherein the substrate support includes an electrostatic chuck, and the second feature pattern reflects a pattern of a surface structure of the electrostatic chuck.

[0103] [E4] The substrate processing system described in [E3], wherein the electrostatic chuck includes: a first convex portion having a ring shape and an upper surface that forms a substrate support surface; and a plurality of second convex portions, each having an upper surface that forms the substrate support surface and arranged inside the first convex portion; and the second characteristic pattern reflects the pattern of the first convex portion and / or the plurality of second convex portions.

[0104] [E5] The substrate processing system according to any one of [E1] to [E4], wherein the second feature pattern reflects a pattern formed on the upper surface of the substrate by an etching process, which is the substrate processing.

[0105] [E6] The substrate processing system according to any one of [E3] to [E5], wherein the substrate support includes a plurality of gas holes communicating with a gap between the substrate and the electrostatic chuck, and the second feature pattern reflects a pattern of the plurality of gas holes.

[0106] [E7] The substrate processing system according to any one of [E1] to [E6], wherein the substrate support includes a plurality of pin holes into which a plurality of lifter pins for the substrate are inserted, and the second feature pattern reflects a pattern of the plurality of pin holes.

[0107] [E8] The substrate processing system according to any one of [E1] to [E7], wherein the second feature pattern reflects a pattern of deposits formed on the upper surface of the substrate by the substrate processing.

[0108] [E9] A substrate processing system described in any one of [E1] to [E8], wherein the second feature pattern reflects a pattern of deposits formed on the underside of the substrate by the substrate processing, and the pattern of deposits has an inner edge on the underside of the substrate that is inward relative to the edge of the substrate.

[0109] [E10] The substrate processing system described in [E9], wherein the first feature pattern is a pattern reflecting an edge of the substrate, and the calculation unit is configured to determine a distance between an inner edge of the second feature pattern and the edge of the first feature pattern in each of three or more radial directions of the edge of the first feature pattern, and to calculate the positional relationship from the distance in each of the three or more radial directions.

[0110] [E11] The substrate processing system according to [E10], wherein the calculation unit is configured to use the distance in each of the three or more radial directions, a first angle between a first radial direction and a second radial direction different from the first radial direction among the three or more radial directions, and a second angle between the second radial direction and a third radial direction different from the second radial direction to calculate a sine wave function that interpolates a distance between the inner edge and the edge in the radial direction within the first angle and a distance between the inner edge and the edge in the radial direction within the second angle, and to correct the distance in each of the three or more radial directions using the sine wave function.

[0111] [E12] The substrate processing system according to any one of [E1] to [E11], wherein the transport control unit is configured to control the transport module so as not to transport the substrate to the transport position when a difference between a position of the substrate support unit and a position of the substrate during the substrate processing is greater than a first threshold value or is equal to or greater than the first threshold value.

[0112] [E13] The substrate processing system according to [E12], wherein the transport control unit is configured to issue a warning when the difference is greater than the first threshold value or equal to or greater than the first threshold value.

[0113] [E14] The substrate processing system according to any one of [E1] to [E13], wherein the transport control unit is configured to control the transport module to transport the substrate to the transport position without correcting the transport position when a difference between a position of the substrate support unit and a position of the substrate during the substrate processing is smaller than a second threshold value or equal to or smaller than the second threshold value.

[0114] [E15] The substrate processing system according to any one of [E1] to [E14], wherein the transport control unit is configured to, when a difference between a position of the substrate support unit and a position of the substrate during the substrate processing is smaller than a first threshold or equal to or less than a first threshold and is larger than a second threshold or equal to or more than a second threshold, correct the transport position based on the positional relationship and control the transport module to transport the substrate to the corrected transport position.

[0115] [E16] The substrate processing system according to any one of [E1] to [E15], wherein the extraction unit is configured to extract the first feature pattern by binarizing the image.

[0116] [E17] The substrate processing system according to any one of [E1] to [E16], wherein the extraction unit is configured to extract the second feature pattern based on a difference between the image and an image obtained by performing a blurring process on the image.

[0117] [E18] A substrate processing method comprising: a step of transporting a substrate to a transport position on a substrate support member arranged in a chamber; a step of performing substrate processing on the substrate on the substrate support member; a step of transporting the substrate to which the substrate processing has been applied from the transport position; a step of acquiring an image of the substrate being transported along a transport path; a step of extracting, from the image of the substrate to which the substrate processing has been applied, a first feature pattern having a center that reflects a central position of the substrate, and a step of extracting a second feature pattern having a center that reflects a central position of the substrate support member at the time of performing the substrate processing, based on the first feature pattern and the second feature pattern; and a step of correcting the transport position based on the positional relationship.

[0118] [E19] A program executed by a computer of a substrate processing system to cause the substrate processing system to perform the substrate processing method according to [E18].

[0119] [E20] A storage medium storing the program according to [E19].

[0120] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0121] 1...plasma processing apparatus, 2b1...extraction unit, 2b2...calculation unit, 5c...gas hole, 5d...pin hole, 7, 7A, 7B, 7C, 7D, 7E...image, 10...chamber, 11...substrate support unit, 11a...substrate support surface, 11c...center position, 71a...first center position, 72a...second center position, 51...electrostatic chuck, 51c...first convex portion, 51d...second convex portion, 60, 65...imaging unit, 70...edge, 71...first feature pattern, 72, 72A, 72B, 72C, 72D...second feature pattern, CU...transfer control unit, D1 to D8...radial direction, P...transfer path, PM1 to PM12...process module, PS...substrate processing system, TM1, TM2...transfer module, W...substrate, Wa, Wb...deposit.

Claims

1. A substrate processing system comprising: a process module having a chamber and a substrate support part disposed within the chamber, the process module being configured to perform substrate processing on a substrate on the substrate support part; a transport module configured to transport the substrate to a transport position on the substrate support part; an imaging part having a field of view including a transport path of the substrate, and configured to acquire an image of the substrate; an extraction part configured to extract a first feature pattern from the image of the substrate to which the substrate processing has been applied, the first feature pattern having a center reflecting a central position of the substrate, and to extract a second feature pattern having a center reflecting a central position of the substrate support part when the substrate processing is performed; a calculation part configured to calculate a positional relationship between a position of the substrate support part and a position of the substrate when the substrate processing is performed based on the first feature pattern and the second feature pattern; and a transport control part configured to correct the transport position with respect to the transport module based on the positional relationship.

2. The substrate processing system of claim 1, wherein the calculation unit is configured to calculate a positional relationship between the center position of the substrate support part and the center position of the substrate when the substrate processing is performed based on a first center position identified from the first feature pattern and a second center position identified from the second feature pattern.

3. The substrate processing system of claim 2, wherein the substrate support includes an electrostatic chuck, and the second feature pattern reflects a pattern of a surface structure of the electrostatic chuck.

4. The substrate processing system of claim 3, wherein the electrostatic chuck includes: a first convex portion having a ring shape and an upper surface that constitutes a substrate support surface; and a plurality of second convex portions, each having an upper surface that constitutes the substrate support surface and arranged inside the first convex portion; and the second characteristic pattern reflects the pattern of the first convex portion and / or the plurality of second convex portions.

5. The substrate processing system according to claim 4, wherein the second feature pattern reflects a pattern formed on the upper surface of the substrate by an etching process which is the substrate processing.

6. The substrate processing system of claim 3, wherein the substrate support includes a plurality of gas holes communicating with a gap between the substrate and the electrostatic chuck, and the second characteristic pattern reflects a pattern of the plurality of gas holes.

7. The substrate processing system of claim 1, wherein the substrate support includes a plurality of pin holes into which a plurality of lifter pins for the substrate are inserted, and the second feature pattern reflects a pattern of the plurality of pin holes.

8. The substrate processing system according to claim 6 or 7, wherein the second feature pattern reflects a pattern of deposits formed on the upper surface of the substrate by the substrate processing.

9. The substrate processing system of claim 1, wherein the second feature pattern reflects a pattern of deposits formed on an underside of the substrate by the substrate processing, the pattern of deposits having an inner edge on the underside of the substrate that is inward relative to an edge of the substrate.

10. The substrate processing system of claim 9, wherein the first feature pattern is a pattern reflecting an edge of the substrate, and the calculation unit is configured to determine a distance between an inner edge of the second feature pattern and the edge of the first feature pattern in each of three or more radial directions of the edge of the first feature pattern, and to calculate the positional relationship from the distance in each of the three or more radial directions.

11. The substrate processing system of claim 10, wherein the calculation unit is configured to use the distance in each of the three or more radial directions, a first angle between a first radial direction and a second radial direction different from the first radial direction among the three or more radial directions, and a second angle between the second radial direction and a third radial direction different from the second radial direction to calculate a sine function that interpolates the distance between the inner edge and the edge in the radial direction within the first angle and the distance between the inner edge and the edge in the radial direction within the second angle, and to correct the distance in each of the three or more radial directions using the sine function.

12. A substrate processing system as described in any one of claims 1 to 7, wherein the transport control unit is configured to control the transport module not to transport the substrate to the transport position when a difference between a position of the substrate support unit and a position of the substrate during execution of the substrate processing is greater than a first threshold value or is equal to or greater than the first threshold value.

13. The substrate processing system of claim 12, wherein the transport control unit is configured to issue an alarm if the difference is greater than or equal to the first threshold value.

14. A substrate processing system as claimed in any one of claims 1 to 7, wherein the transport control unit is configured to control the transport module to transport the substrate to the transport position without correcting the transport position when a difference between a position of the substrate support unit and a position of the substrate during execution of the substrate processing is smaller than a second threshold value or is equal to or smaller than the second threshold value.

15. A substrate processing system as claimed in any one of claims 1 to 7, wherein the transport control unit is configured to, when a difference between a position of the substrate support unit and a position of the substrate during execution of the substrate processing is smaller than a first threshold value or equal to or less than the first threshold value, and is larger than a second threshold value or equal to or more than the second threshold value, correct the transport position based on the positional relationship, and control the transport module to transport the substrate to the corrected transport position.

16. The substrate processing system according to any one of claims 1 to 7, wherein the extraction unit is configured to extract the first characteristic pattern by binarizing the image.

17. A substrate processing system according to any one of claims 1 to 7, wherein the extraction unit is configured to extract the second feature pattern by a difference between the image and an image obtained by performing a blurring process on the image.

18. A substrate processing method comprising the steps of: transporting a substrate to a transport position on a substrate support part arranged in a chamber; performing substrate processing on the substrate on the substrate support part; transporting the substrate after the substrate processing has been applied from the transport position; acquiring an image of the substrate being transported along a transport path; extracting a first feature pattern having a center reflecting a central position of the substrate from the image of the substrate after the substrate processing has been applied, and extracting a second feature pattern having a center reflecting a central position of the substrate support part when the substrate processing is performed, based on the first feature pattern and the second feature pattern, calculating a positional relationship between a position of the substrate support part and a position of the substrate when the substrate processing is performed; and correcting the transport position based on the positional relationship.

19. A program executed by a computer of a substrate processing system to cause the substrate processing system to execute the substrate processing method according to claim 18.

20. A storage medium storing the program according to claim 19.

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