Activation device for plasma, and wafer bonding apparatus and method

Abstract

An activation device (200) for plasma, and a wafer bonding apparatus and method. The activation device (200) for plasma comprises: a reaction chamber (230), the interior of which at least comprises a combination of two first electrodes (210) and one second electrode (220), wherein the first electrodes (210) and the second electrode (220) are arranged alternately, a first electric field area (241) is formed between the second electrode (220) and the first electrode (210) adjacent thereto in a first direction, and a second electric field area (242) is formed between the second electrode (220) and the first electrode (210) adjacent thereto in a second direction; and fixing parts, which are respectively arranged in the electric field areas and are used for fixing a plurality of wafers in the plurality of electric field areas, so that the surfaces of the wafers are subjected to forward bombardment of the plasma. By using the activation device (200) for plasma, the efficiency of wafer activation treatment of a machine can be improved without increasing the occupied area and the number of devices, thereby improving the production capacity of the machine and achieving doubling of the production capacity.

Description

Plasma activation equipment, wafer bonding device and method Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a plasma activation device, a wafer bonding apparatus, a wafer bonding method and a computer-readable storage medium. Background Art

[0002] Among semiconductor packaging equipment, traditional bonding equipment is mostly wire bonding, which has low performance and the chips used are large in size, which cannot meet the current market demand for semiconductor chips.

[0003] In order to improve the performance of bonding equipment, direct bonding equipment is currently used in the advanced packaging field. Direct bonding equipment does not require the use of traditional wires, but completes bonding by directly bonding two wafers together, where the bonding force is the van der Waals force. Furthermore, depending on the material of the film on the surface of the wafer, bonding equipment can also be divided into hybrid bonding equipment and fusion bonding equipment. The difference between these two types of equipment is that hybrid bonding equipment has high requirements for precision, followed by production capacity, while fusion bonding equipment has high requirements for production capacity, followed by precision. Therefore, for fusion bonding equipment with high production capacity requirements, improving the production capacity of each module is still one of the main demands at present.

[0004] Fusion bonding equipment can be composed of multiple modules, including a bonding module, a plasma module, a cleaning module, an equipment front-end module (EFEM), and a track. To increase machine capacity, the number of plasma modules must be multiplied to meet production requirements. However, the overall equipment footprint cannot be extended indefinitely, making it unacceptable for semiconductor fabrication plants (FABs). Furthermore, the track travel cannot support an indefinitely extended wafer transfer process.

[0005] In order to solve the above-mentioned problems existing in the prior art, the field urgently needs a plasma activation technology that can improve the efficiency of the machine for wafer activation processing without increasing the floor space and the number of equipment, thereby increasing the machine production capacity and doubling the production capacity.

[0006] Summary of the Invention

[0007] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0008] In order to overcome the above-mentioned defects of the prior art, the present invention provides a plasma activation device, a wafer bonding device, a wafer bonding method and a computer-readable storage medium, which can improve the efficiency of the machine for wafer activation processing without increasing the floor space and the number of equipment, thereby increasing the machine's production capacity and doubling the production capacity.

[0009] Specifically, the plasma activation device provided according to the first aspect of the present invention includes: a reaction chamber, which includes a combination of at least two first electrodes and one second electrode, wherein the first electrodes and the second electrodes are arranged alternately, a first electric field region is formed between the second electrode and the first electrode adjacent to it in a first direction, and a second electric field region is formed between the second electrode and the first electrode adjacent to it in a second direction; and a fixing component, which is respectively arranged in each electric field region and is used to fix multiple wafers in multiple electric field regions so that the surface of each wafer is bombarded by the plasma in a forward direction.

[0010] Furthermore, in some embodiments of the present invention, at least one of the first electrode and the second electrode is connected to a first radio frequency power source, and the other is grounded or connected to a second radio frequency power source.

[0011] Furthermore, in some embodiments of the present invention, the fixing component includes a clamping mechanism, which is in a relaxed state to receive the wafer, and the clamping mechanism is tightly attached to the first electrode or the second electrode to fix the wafer to the first electrode or the second electrode.

[0012] Furthermore, in some embodiments of the present invention, the fixing component includes a suction cup and a ejector pin assembly, the suction cup is fixed on the first electrode, a plurality of ejectors in the ejector pin assembly rises to receive the wafer, and the plurality of ejectors descends to allow the wafer to fall on the suction cup.

[0013] Furthermore, in some embodiments of the present invention, the chuck includes a vacuum chuck or an electrostatic chuck.

[0014] Furthermore, in some embodiments of the present invention, the reaction chamber includes a plurality of groups of the two first electrodes and one second electrode arranged at intervals from each other.

[0015] Furthermore, in some embodiments of the present invention, the activation device also includes an air inlet and an air outlet, wherein the air inlet is arranged at the upper end of the electric field region located at the top, and the air outlet is arranged at the lower end of the electric field region located at the bottom, so that the process gas used for plasma surface activation flows through each electric field region.

[0016] In addition, the wafer bonding device provided according to the second aspect of the present invention includes: the plasma activation device provided by the first aspect of the present invention, which provides a plurality of wafers to be bonded with activated surfaces; and a bonding device, which obtains the plurality of wafers to be bonded and bonds the plurality of wafers to be bonded in pairs according to the activated surfaces.

[0017] In addition, the above-mentioned wafer bonding method provided according to the third aspect of the present invention includes the following steps: fixing at least two wafers to be bonded in at least two electric field regions in the reaction chamber respectively; simultaneously performing forward plasma bombardment on the surfaces of the at least two bonded wafers to activate them; and bonding the activated surfaces of the at least two wafers to be bonded after the activation treatment in pairs.

[0018] In addition, according to a fourth aspect of the present invention, there is also provided a computer-readable storage medium having computer instructions stored thereon, wherein when the computer instructions are executed by a processor, the above-mentioned wafer bonding method provided by the third aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above features and advantages of the present invention will be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0020] FIG1 shows a schematic structural diagram of a plasma activation device in the prior art;

[0021] FIG2 shows a schematic structural diagram of a plasma activation device according to some embodiments of the present invention;

[0022] FIG3 shows a cross-sectional view of a plasma activation apparatus according to some embodiments of the present invention; and

[0023] FIG4 shows a flow chart of a wafer bonding method according to some embodiments of the present invention.

[0024] Figure numerals: 100, 200 plasma activation equipment; 110 upper electrode; 120 lower electrode; 130 electric field region; 140, 150, 160 wafer; 210 first electrode; 220 second electrode; 230 reaction chamber; 231 upper cover plate; 241 first electric field region; 242 second electric field region; 251 first fixing component; 252 second fixing component; 2521 ejector pin support plate; 2522 ejector pin; 261 air inlet; 262 air outlet; 270 ejector pin ring; 271, 272 driving mechanism; 280 quartz ring; 281 air vent; 282 bottom ring; 283 bottom plate; 310 first wafer; 320 second wafer; Steps S410 to S430. DETAILED DESCRIPTION

[0025] The following specific embodiments illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0026] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0027] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0028] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0029] As mentioned above, for fusion bonding equipment with high production capacity requirements, increasing the production capacity of each module remains one of the main needs. Fusion bonding equipment can be composed of multiple modules, including a bonding module, a plasma module, a cleaning module, an equipment front end module (EFEM), and a track. In order to increase the production capacity of the machine, the number of plasma modules must be increased exponentially to meet the production capacity requirements. However, the overall equipment footprint cannot be extended indefinitely, which is not acceptable to semiconductor fabrication plants (FABs). The track travel cannot support the indefinite extension of the wafer transfer work.

[0030] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a plasma activation device, a wafer bonding device, a wafer bonding method and a computer-readable storage medium, which can improve the efficiency of the machine for wafer activation processing without increasing the floor space and the number of equipment, thereby increasing the machine's production capacity and doubling the production capacity.

[0031] In some non-limiting embodiments, the plasma activation device provided in the first aspect of the present invention may be configured in the wafer bonding apparatus provided in the second aspect of the present invention. Furthermore, the wafer bonding method provided in the third aspect of the present invention may also be implemented by the wafer bonding apparatus provided in the second aspect of the present invention.

[0032] First, please refer to FIG1 , which shows a schematic structural diagram of a plasma activation device in the prior art.

[0033] At present, there are three traditional plasma ignition methods, namely electrostatic coupling, inductive coupling, and electromagnetic wave coupling. Based on the location where the plasma is generated, it can also be divided into remote plasma ignition and local plasma ignition. As shown in Figure 1, in the traditional local ignition method, the plasma activation device 100 mostly uses an upper electrode 110 and a lower electrode 120, one of which is connected to high frequency and the other to low frequency, or one of the two electrodes is grounded. An electric field region 130 is formed between the upper electrode 110 and the lower electrode 120, and a uniform plasma is generated in the electric field region 130 to bombard the wafer surface to remove pollutants and oxide layers on the wafer surface, thereby achieving wafer surface activation.

[0034] However, the plasma activation device 100 is generally only capable of igniting a single wafer. This is to ensure that the wafer is not obstructed and that the wafer surface is fully bombarded by the plasma. If, in order to increase production capacity, multiple wafers are directly introduced into a vacuum chamber for ignition, as shown in FIG1 , the plasma activation device 100 includes wafers 140, 150, and 160 at the same time. This will result in the surfaces of the other wafers (e.g., wafers 150 and 160) being not bombarded by the plasma except for wafer 140 exposed to the electric field region 130. This results in the wafers 150 and 160 not being properly activated. Furthermore, as shown in FIG1 , the bottoms of the wafers 140, 150, and 160 are not in contact with the upper electrode 110 or the lower electrode 120, which can also produce unpredictable results on the backs of the wafers 140, 150, and 160.

[0035] For this purpose, please refer to Figures 2 and 3 of the present disclosure. Figure 2 shows a schematic diagram of the structure of a plasma activation device according to some embodiments of the present disclosure, while Figure 3 shows a cross-sectional view of a plasma activation device according to some embodiments of the present disclosure. Please refer to Figure 2 as the primary reference, and Figure 3 as a supplementary reference, to understand the following embodiments.

[0036] As shown in Figures 2 and 3, in some embodiments of the present invention, in a local plasma ignition device using capacitively coupled plasma (CCP), the plasma activation device 200 may include: a reaction chamber 230, which may include at least a combination of two first electrodes 210 and one second electrode 220, wherein the first electrodes 210 and the second electrodes 220 are arranged at intervals from each other, and a first electric field region 241 may be formed between the second electrode 220 and the first electrode 210 adjacent to it in a first direction (for example, above), and a second electric field region 242 may be formed between the second electrode 220 and the first electrode 210 adjacent to it in a second direction (for example, below).

[0037] In some embodiments, at least one of the first electrode 210 and the second electrode 220 can be connected to a first RF power source, and the other can be grounded or connected to a second RF power source. Specifically, optionally, the first electrode 210 can be connected to the first RF power source, and the second electrode 220 can be connected to the second RF power source. Furthermore, the first RF power source can be a high-frequency power source, and the second RF power source can be a low-frequency power source. The first electrode 210 and the second electrode 220 can form a sandwich structure combination with a low-frequency electrode sandwiched between two high-frequency electrodes, thereby forming two independent electric field regions, namely the first electric field region 241 and the second electric field region 242. Through these two electric field regions, the surfaces of the two wafers placed therein can be activated simultaneously.

[0038] In other optional embodiments, the first RF power supply may be a low-frequency power supply, and the second RF power supply may be a high-frequency power supply. Then the first electrode 210 and the second electrode 220 may form a sandwich structure combination of two low-frequency electrodes and a high-frequency electrode.

[0039] In addition, in other optional embodiments, the upper and / or lower first electrodes 210 can be grounded, and the middle second electrode 220 can be connected to a second RF power source, that is, a sandwich structure combination of a ground electrode-second RF electrode-ground electrode, or a sandwich structure combination of a first RF electrode-second RF electrode-ground electrode, or a sandwich structure combination of a ground electrode-second RF electrode-first RF electrode can be formed from top to bottom inside the reaction chamber 230. Optionally, the middle second electrode 220 can also be grounded, and the first electrode 210 can be connected to a first RF power source, that is, a sandwich structure combination of a first RF electrode-ground electrode-first RF electrode can be formed from top to bottom inside the reaction chamber 230.

[0040] Furthermore, in other optional embodiments, the upper first electrode 210, the middle second electrode 220, and the lower first electrode 210 of the sandwich structure assembly can even be connected to three different RF power sources, as long as the two opposing electrodes are configured as plates that can form a potential difference between each other. Electrons are accelerated in the electric field formed by the two opposing electrodes to generate plasma.

[0041] The plasma activation device 200 may include fixing components respectively disposed in each electric field region for fixing multiple wafers in the multiple electric field regions so that the surface of each wafer can be bombarded by the plasma in a positive direction.

[0042] Specifically, as shown in Figures 2 and 3, the upper chamber of the reaction chamber 230 includes a first electric field region 241 formed by the first electrode 210 as an upper electrode and the second electrode 220 as a lower electrode. In this first electric field region 241, the first wafer 310 can be fixed by the first fixing member 251.

[0043] Optionally, the first fixing component 251 may include a clamping mechanism. When the clamping mechanism is lowered and in a relaxed state, the first wafer 310 can be sent into the gap between the upper first electrode 210 and the clamping mechanism, and placed on the clamping mechanism. The clamping mechanism then rises so that the upper surface of the first wafer 310 is in close contact with the upper first electrode 210, and the first wafer 310 is clamped and fixed in the upper chamber. After the first wafer 310 completes the activation treatment, the clamping mechanism can descend with the first wafer 310 to facilitate the first wafer 310 to be taken out from the gap between the upper first electrode 210 and the clamping mechanism. Optionally, the method of removing the first wafer 310 may include obtaining it by clamping with a robot, or obtaining it by adsorption, etc., so that the first wafer 310 is separated from the clamping mechanism and removed.

[0044] In some optional embodiments, the lower chamber of the reaction chamber 230 includes a second electric field region 242 formed by the second electrode 220 as the upper electrode and the first electrode 210 as the lower electrode. In this second electric field region 242, the second fixing component 252 composed of the clamping mechanism described above can also be used to fix the second wafer 320. Specifically, when the clamping mechanism is in a relaxed state away from the lower first electrode 210, the second wafer 320 can be sent into the gap between the lower first electrode 210 and the clamping mechanism, and the second wafer 320 can be placed directly or indirectly on the upper surface of the lower first electrode 210. Here, indirect placement can be understood as the second wafer 320 being placed on a wafer tray, which is located on the upper surface of the lower first electrode 210. After determining the position of the second wafer 320, the clamping mechanism descends so that the lower surface of the second wafer 320 is in close contact with the lower first electrode 210, thereby completing the clamping and fixing of the second wafer 320. After the second wafer 320 is activated, the clamping mechanism can be raised to facilitate removal of the second wafer 320 from the gap between the lower first electrode 210 and the clamping mechanism. Optionally, the second wafer 320 can be removed by gripping with a robot or by suction, thereby separating the second wafer 320 from the clamping mechanism and removing it.

[0045] Alternatively, in other embodiments, as shown in FIG2 , for the second electric field region 242 formed in the lower chamber of the reaction chamber 230 by the second electrode 220 serving as the upper electrode and the first electrode 210 serving as the lower electrode, the second securing member 252 may also comprise a wafer tray and ejector pin assembly, wherein the ejector pin assembly may include an ejector pin support plate 2521 and a plurality of ejector pins 2522 mounted thereon. The wafer tray may be secured to the lower first electrode 210, with the ejector pin support plate 2521 raising and lowering the plurality of ejector pins 2522. Specifically, the ejector pins 2522 may first rise to receive the second wafer 320, then descend, allowing the second wafer 320 to land on the wafer tray on the upper surface of the lower first electrode 210. After activation of the second wafer 320, the ejector pins 2522 may rise with the second wafer 320, freeing it from the wafer tray below. The lifted second wafer 320 can then be retrieved by a robotic arm and removed from the reaction chamber 230.

[0046] Furthermore, in some preferred embodiments, the wafer tray may utilize a suction cup structure, such as a vacuum chuck or an electrostatic chuck. This suction cup structure can be combined with the fixing method of the ejector pin assembly to serve as the first fixing component 251. This structure can be extended to the first electric field region 241 of the upper chamber of the reaction chamber 230, formed by the first electrode 210 as the upper electrode and the second electrode 220 as the lower electrode. In this embodiment, the wafer feeding and transfer process of the suction cup structure in the first fixing component 251 in conjunction with the ejector pin assembly is similar to the wafer feeding and transfer process of the tray structure in conjunction with the ejector pin assembly described above, and will not be further described here. However, since the first wafer 310 must overcome gravity to be adsorbed on the upper first electrode 210 in the first electric field region 241 of the upper chamber, a wafer tray with vacuum or electrostatic adsorption capabilities can be implemented. Furthermore, the multiple ejector pins in the ejector pin assembly may also preferably possess an adsorption function to further enhance the first wafer 310's ability to overcome gravity. Since the film transfer process occurs in an atmospheric environment, the ejector pin may only have vacuum adsorption capability.

[0047] In the above-mentioned embodiments of the fixed components, since plasma is pervasive, each wafer in each electric field region has a single surface exposed in the electric field region, so that the exposed surface of each wafer can be bombarded by the plasma in the positive direction, and the other side of the wafer is as close to the electrode as possible without leaving any gap to avoid unexpected results.

[0048] Furthermore, in some preferred embodiments of the present invention, the reaction chamber 230 in the embodiment shown in FIG. 2 may include a plurality of groups of the above-mentioned two first electrodes 210 and one second electrode 220 arranged at intervals from each other to form a sandwich-like sandwich structure combination, that is, the combination of the two first electrodes 210 and one second electrode 220 is further extended in the longitudinal direction to form a multi-layered sandwich-like sandwich structure combination, for example, 5 layers, 7 layers, etc., thereby further improving the equipment production capacity without changing the floor space.

[0049] 2 , in some optional embodiments, ejector rings 270 (lift rings) may be configured within each electric field region within the reaction chamber 230 where the activation reaction occurs. For example, ejector rings 270 may be configured in the upper and lower chambers within the reaction chamber 230, respectively, with one ejector ring 270 configured within the first electric field region 241 and one within the second electric field region 242. This serves to more evenly distribute the plasma across the surfaces of the first wafer 310 and the second wafer 320, while also protecting other locations from plasma bombardment to a certain extent. As shown in FIG2 , the ejector ring 270 within the first electric field region 241 can be driven into the reaction chamber from above by a drive mechanism 271 located in the upper chamber, while the ejector ring 270 within the second electric field region 242 can be driven into the reaction chamber from below by a drive mechanism 272 located in the lower chamber.

[0050] As shown in FIG2 , in some embodiments, the plasma activation device 200 may further include an air inlet 261 and an air outlet 262 for introducing process gases (such as oxygen, nitrogen, hydrogen, argon, etc.). The air inlet 261 may be provided at the upper end of the first electric field region 241 located at the top, and the air outlet 262 may be provided at the lower end of the second electric field region 242 located at the bottom. This structure of the reaction chamber 230 with airflow entering from top to bottom allows the process gas used for plasma surface activation to flow from top to bottom through each electric field region, thereby enabling the activation process of multiple wafers to be performed in the same vacuum reaction chamber 230. The high-frequency electric field between two electrodes of different frequencies ionizes the process gas (such as oxygen, nitrogen, hydrogen, argon, etc.), generating a uniform plasma in the vacuum reaction chamber 230. At the same time, the charged particles are accelerated by the bias voltage to bombard the surface, which can effectively remove contaminants and oxide layers on the surfaces of multiple wafers and simultaneously activate the surfaces of multiple wafers.

[0051] Optionally, the reaction chamber 230 of the plasma activation device 200 can be configured as a chamber body with an openable and closable upper cover 231. As shown in Figure 2, opening the upper cover 231 allows access to materials in the upper first electric field region 241. Furthermore, removing the middle second electrode 220 also allows access to materials in the lower second electric field region 242. This improves the ease of maintenance of the chamber structure and offers high commercial value.

[0052] Further, the material of the upper cover plate 231 can be selected from quartz glass. Quartz glass can still maintain very high dielectric strength under high temperature, high pressure and high frequency, and its resistivity has almost no loss, so quartz glass is an excellent insulating material. As shown in the partial enlarged view 1 in Fig. 3, the outside of the second electrode 220 in the activation device 200 of plasma can also be provided with a quartz ring 280 of high frequency insulation, and is provided with a plurality of vent holes 281. Process gas enters from the air inlet 261 on the upper cover plate 231, flows into the lower chamber through a plurality of vent holes 281 on the quartz ring 280, and is discharged through the air outlet 262 at the bottom, so that the gas in the cavity can be guaranteed to all flow in and out from the top and bottom, and is sufficiently uniform.

[0053] In some embodiments, RF can be connected to the electrodes via cables or copper tape. If the upper, middle, and lower electrodes in the reaction chamber 230 are all connected to an RF power source, all structures in contact with them need to be insulated with quartz glass. For example, the quartz upper cover plate 231, quartz ring 280, quartz bottom ring 282 surrounding the outer side of the lower first electrode 210, and quartz bottom plate 283 can be used. Alternatively, if several layers of the above electrodes are treated as grounds, they can be directly connected to the reaction chamber 230, which is a simpler design.

[0054] Having now introduced the plasma activation device provided in the first aspect of the present invention, the second aspect of the present invention further provides a wafer bonding apparatus. This wafer bonding apparatus may include: at least one plasma activation device 200 for providing multiple wafers to be bonded having activated surfaces; and a bonding device for receiving the activated wafers to be bonded and bonding these wafers in pairs based on the activated surfaces of the wafers. Since the bonding device does not involve the improvements of the present invention, it will not be described in detail.

[0055] Next, please refer to FIG. 4 , which shows a flow chart of a wafer bonding method provided according to some embodiments of the present invention.

[0056] As shown in FIG. 4 , in some embodiments of the present invention, the wafer bonding method may include step S410 : fixing at least two wafers to be bonded in at least two electric field regions in a reaction chamber, respectively.

[0057] In some embodiments, as shown in FIG. 2 or FIG. 3 , in the reaction chamber 230 of the plasma activation device 200 , the first wafer 310 and the second wafer 320 can be fixed in the upper chamber and the lower chamber respectively by the first fixing component 251 and the second fixing component 252 , so that the first wafer 310 and the second wafer 320 are respectively close to the corresponding first electrode 210 located at the upper portion and the first electrode 210 located at the lower portion.

[0058] Next, as shown in FIG. 4 , the wafer bonding method provided by the present invention may execute step S420 : simultaneously performing forward plasma bombardment on surfaces of at least two bonded wafers to activate them.

[0059] Specifically, in the embodiment shown in FIG. 2 or FIG. 3 , the upper surface of the fixed first wafer 310 is in close contact with the upper first electrode 210, and the lower surface thereof is exposed to the first electric field region 241. Thus, the lower surface of the first wafer 310 is uniformly bombarded by the plasma in the first electric field region 241, thereby activating the wafer surface. The lower surface of the fixed second wafer 320 is in close contact with the lower first electrode 210, and the upper surface thereof is exposed to the second electric field region 242. Thus, the upper surface of the second wafer 320 is uniformly bombarded by the plasma in the second electric field region 242, thereby activating the wafer surface.

[0060] Next, as shown in FIG. 4 , the wafer bonding method provided by the present invention may execute step S430 : bonding the activated surfaces of at least two wafers to be bonded after the activation treatment in pairs.

[0061] Specifically, the first wafer 310 and the second wafer 320 that have been activated simultaneously in the reaction chamber 230 are transferred to a bonding device in a wafer bonding apparatus so that their activated surfaces are brought into contact and a bonding process is performed.

[0062] Those skilled in the art will appreciate that the wafer bonding scheme described above based on the first wafer 310 and the second wafer 320 is merely a non-limiting embodiment of the present invention, intended to clearly illustrate the main concepts of the present invention and provide a specific scheme that is convenient for the public to implement, and is not intended to limit the scope of protection of the present invention. There is no limitation on the number of wafers that can be bonded simultaneously or the bonding method.

[0063] Since the sandwich structure of the first electrode 210, the second electrode 220, and the first electrode 210 arranged in the upper, middle, and lower structures within the plasma activation device 200 of the wafer bonding apparatus can be expanded, that is, the plasma activation device 200 can include a sandwich-like sandwich structure with multiple layers, such as 5 or 7 layers, at least two wafers can be activated in one reaction chamber 230, and more wafers can be activated, thereby improving the production capacity of the machine. This will not be further elaborated here.

[0064] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0065] Another aspect of the present invention further provides a computer-readable storage medium having computer instructions stored thereon, which can be used to implement the above-mentioned wafer bonding method provided in the third aspect of the present invention.

[0066] Those skilled in the art will appreciate that the aforementioned embodiments of the wafer bonding method are merely non-limiting implementations of the present invention, intended to clearly illustrate the main concepts of the present invention and provide specific solutions for easy implementation by the public. They are not intended to limit the entire operating mode or functionality of the wafer bonding apparatus and plasma activation device 200. Similarly, the wafer bonding apparatus and plasma activation device 200 are merely non-limiting implementations of the present invention and do not constitute a limitation on the implementation of the various steps in the wafer bonding method.

[0067] In summary, the present invention provides a plasma activation device, a wafer bonding device, a wafer bonding method and a computer-readable storage medium, which can improve the efficiency of the machine for wafer activation processing without increasing the floor space and the number of equipment, thereby improving the machine's production capacity and doubling the production capacity.

[0068] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A plasma activation device, characterized in that: include: A reaction chamber, comprising at least two first electrodes and one second electrode, wherein the first electrodes and the second electrodes are arranged alternately, a first electric field region is formed between the second electrodes and the first electrodes adjacent to them in a first direction, and a second electric field region is formed between the second electrodes and the first electrodes adjacent to them in a second direction; as well as The fixing components are respectively arranged in each electric field area and used for fixing a plurality of wafers in the plurality of electric field areas so that the surface of each wafer is bombarded forward by the plasma.

2. The activation device according to claim 1, characterized in that At least one of the first electrode and the second electrode is connected to a first radio frequency power source, and the other is grounded or connected to a second radio frequency power source.

3. The activation device according to claim 1, characterized in that The fixing component includes a clamping mechanism, the clamping mechanism is in a relaxed state to receive the wafer, and the clamping mechanism is closely attached to the first electrode or the second electrode to fix the wafer to the first electrode or the second electrode.

4. The activation device according to claim 1, characterized in that The fixing component includes a suction cup and an ejector pin assembly. The suction cup is fixed on the first electrode. A plurality of ejector pins in the ejector pin assembly rise to receive the wafer that is sent in, and the plurality of ejector pins fall back to make the wafer fall on the suction cup.

5. The activation device according to claim 4, characterized in that The chuck includes a vacuum chuck or an electrostatic chuck.

6. The activation device according to claim 1, characterized in that The reaction chamber includes a combination of a plurality of groups of two first electrodes and one second electrode arranged at intervals from each other.

7. The activation device according to claim 1, characterized in that It also includes an air inlet and an air outlet, wherein the air inlet is arranged at the upper end of the electric field region located at the top, and the air outlet is arranged at the lower end of the electric field region located at the bottom, so that the process gas used for plasma surface activation flows through each electric field region.

8. A wafer bonding device, characterized in that: include: The plasma activation device according to any one of claims 1 to 7, providing a plurality of wafers to be bonded having activated surfaces; as well as bonding equipment, obtaining the plurality of wafers to be bonded, and bonding the plurality of wafers to be bonded according to the activated surface Bonding of two wafers.

9. A wafer bonding method, characterized in that: The following steps are involved: Fixing at least two wafers to be bonded in at least two electric field regions in the reaction chamber respectively; Simultaneously performing forward plasma bombardment on the surfaces of the at least two bonded wafers to perform activation treatment on them; and The activated surfaces of at least two wafers to be bonded after the activation treatment are bonded in pairs.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the wafer bonding method as claimed in claim 9 is implemented.

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