Semiconductor process apparatus and exhaust system thereof

Abstract

The present application relates to the technical field of semiconductors, and discloses a semiconductor process apparatus and an exhaust system thereof. The exhaust system of the semiconductor process apparatus comprises a first vacuum pipe, a second vacuum pipe, a vacuum proportional valve and a first pressure measurement device; an inlet end of the first vacuum pipe is configured to be communicated with a reaction chamber; the first pressure measurement device is arranged in the first vacuum pipe to measure the pressure value of the first vacuum pipe; the vacuum proportional valve is arranged between an outlet end of the first vacuum pipe and an inlet end of the second vacuum pipe; an outlet end of the second vacuum pipe is connected to a vacuum pump; and the opening degree of the vacuum proportional valve can be adjusted on the basis of the pressure value measured by the first pressure measurement device. Thus, under the suction action of the vacuum pump, the air pressure in the reaction chamber can be stably maintained in a high vacuum state by means of the vacuum proportional valve, so that high-activity free radicals are generated by means of hydrogen and oxygen, and an oxide film with high density and process uniformity can be rapidly generated; and the process effect is improved.

Description

Semiconductor process equipment and its exhaust system Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process equipment and an exhaust system thereof. Background Art

[0002] In the field of integrated circuit manufacturing, there are currently two commonly used oxidation technologies under normal or slightly low pressure environments. The first is wet oxygen oxidation, which uses water vapor as the oxidant. This technology has a fast film formation rate, but the film quality is not dense, the insulation performance is slightly poor, and the wafer surface uniformity is also poor. The second is dry oxygen oxidation, which uses oxygen as the oxidant. This technology forms a dense film but has a slow film formation rate and poor uniformity. As process technology develops, the line width requirements are narrower, and the corresponding oxide film needs to be more uniform, the film quality is denser, and the film formation rate is faster.

[0003] Existing semiconductor processing equipment consists of a reaction chamber and an exhaust system. The exhaust system communicates with the reaction chamber and exhausts gases from the reaction chamber. However, existing exhaust systems can only maintain the reaction chamber at atmospheric pressure or slightly reduced pressure. Oxidation techniques employed in these environments result in poor process performance.

[0004] Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor process equipment and an exhaust system thereof, which can solve the problem of poor process effect of semiconductor process equipment in related technologies.

[0006] In a first aspect, an embodiment of the present application provides an exhaust system for semiconductor process equipment, comprising a first vacuum line, a second vacuum line, a vacuum pump, a vacuum proportional valve, and a first pressure detection device, wherein the inlet end of the first vacuum line is used to connect to a reaction chamber, the first pressure detection device is arranged in the first vacuum line to detect the pressure value of the first vacuum line, the vacuum proportional valve is arranged between the outlet end of the first vacuum line and the inlet end of the second vacuum line, the outlet end of the second vacuum line is connected to the vacuum pump, and the opening of the vacuum proportional valve can be adjusted according to the pressure value detected by the first pressure detection device.

[0007] In a second aspect, an embodiment of the present application further provides a semiconductor process equipment, comprising a reaction chamber and the above-mentioned exhaust system, wherein the inlet end of the first vacuum pipeline is connected to the reaction chamber.

[0008] In the embodiment of the present application, a vacuum pump is used to perform suction on the reaction chamber through the first vacuum line and the second vacuum line to reduce the air pressure value of the reaction chamber. In addition, the vacuum proportional valve is more suitable for a high vacuum environment. The opening of the vacuum proportional valve is adjusted according to the pressure value detected by the first pressure detection device. Through the vacuum proportional valve, it can ensure that the vacuum pump applies a stable suction force to the reaction chamber and the pressure value detected by the first pressure detection device is stably maintained at a high vacuum state. The first vacuum line is connected to the reaction chamber, and the pressure value of the first vacuum line is equal to the pressure value of the reaction chamber, so the reaction chamber can also be stably maintained at a high vacuum state. In this way, the reaction chamber can generate highly active free radicals through hydrogen and oxygen in a high vacuum state, and can quickly generate an oxide film with high density and process uniformity. Compared with the oxidation technology used in a normal pressure or slightly low pressure environment, the oxidation technology used in a high vacuum environment can better meet the process requirements and improve the process effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG1 is a schematic structural diagram of a semiconductor process equipment in the related art;

[0010] FIG2 is a schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present application.

[0011] Description of reference numerals:

[0012] 100'-reaction chamber,

[0013] 200'-three-way reversing valve,

[0014] 300'-normal pressure exhaust pipe, 310'-normal pressure control valve,

[0015] 400'- low pressure exhaust pipe, 410'- low pressure control valve, 420'- differential pressure gauge, 430'- large range vacuum gauge, 440'- small range vacuum gauge,

[0016] 500'-vacuum pump,

[0017] 100-reaction chamber,

[0018] 210-first vacuum pipeline, 220-second vacuum pipeline, 221-second pressure detection device, 222-vacuum branch, 223-tenth switch valve, 230-vacuum proportional valve,

[0019] 300-vacuum pump,

[0020] 400-first pressure detection device, 410-first vacuum gauge, 420-second vacuum gauge, 430-differential pressure gauge,

[0021] 500-slow pumping pipeline, 510-first switch valve, 520-first flow limiter, 530-throttle valve,

[0022] 610-first pressure relief pipe, 611-second switch valve, 612-first one-way valve, 620-second pressure relief pipe, 630-third pressure relief pipe, 631-third switch valve,

[0023] 710-first air supply pipeline, 711-fourth switch valve, 712-pressure regulating valve, 713-flow regulating element, 714-second one-way valve, 715-pressure detection element,

[0024] 720-second air supply pipeline, 721-fifth switch valve, 722-second flow limiter, 723-third one-way valve,

[0025] 810-sixth switch valve, 820-seventh switch valve, 830-eighth switch valve, 840-ninth switch valve,

[0026] 910-first branch, 920-second branch, 930-third branch. DETAILED DESCRIPTION

[0027] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0028] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0029] In the related art, as shown in FIG1 , semiconductor process equipment relies on an exhaust system to exhaust the gas in the reaction chamber 100 ′, and the exhaust system is connected to the reaction chamber 100 ′. The exhaust system includes a three-way reversing valve 200 ′, a normal pressure exhaust pipe 300 ′, and a low pressure exhaust pipe 400 ′. The inlet end of the three-way reversing valve 200 ′ is connected to the reaction chamber 100 ′, the three-way reversing valve 200 ′ is provided with a normal pressure outlet and a low pressure outlet, the normal pressure exhaust pipe 300 ′ is connected to the normal pressure outlet, and the normal pressure exhaust pipe 300 ′ is provided with a normal pressure control valve 310 ′. The normal pressure control valve 310 ′ can make the reaction chamber 100 ′ 0' maintains a normal pressure environment of 760Torr; the inlet end of the low-pressure exhaust pipe 400' is connected to the low-pressure outlet, and the outlet end of the low-pressure exhaust pipe 400' is connected to the vacuum pump 500', and the low-pressure exhaust pipe 400' is provided with a low-pressure control valve 410'. Under the suction action of the vacuum pump 500', the low-pressure control valve 410' can make the reaction chamber 100' reach a low pressure environment of 50Torr at the lowest, and the low-pressure environment is unstable.

[0030] In some embodiments, the low-pressure control valve 410' may include a first pneumatic valve, a second pneumatic valve, and a third pneumatic valve. The inlet of the first pneumatic valve, the inlet of the second pneumatic valve, and the inlet of the third pneumatic valve are all connected to the low-pressure exhaust pipe 400'. The outlet of the first pneumatic valve is connected to a differential pressure gauge 420', the outlet of the second pneumatic valve is connected to a large-range vacuum gauge 430', and the outlet of the third pneumatic valve is connected to a small-range vacuum gauge 440'. The large-range vacuum gauge 430' has a range of 1000 Torr, and the small-range vacuum gauge 440' has a range of 100 Torr. The pressure of the low-pressure exhaust pipe 400' is detected using the differential pressure gauge 420', the large-range vacuum gauge 430', and the small-range vacuum gauge 440'.

[0031] However, the exhaust system can only maintain the reaction chamber 100' at atmospheric or slightly low pressure, thus restricting wafer processing to wet oxygen oxidation or dry oxygen oxidation techniques. Wet oxygen oxidation, which uses water vapor as the oxidant, rapidly deposits films, but results in poor film density and process uniformity. Dry oxygen oxidation, which uses oxygen as the oxidant, produces denser films but slows film deposition and also results in poor process uniformity. In short, oxidation techniques used in atmospheric or slightly low pressure environments result in poor process performance.

[0032] Based on this, the present application discloses a semiconductor process equipment and an exhaust system thereof, which can maintain a high vacuum state in the reaction chamber. The oxidation technology used in a high vacuum environment can effectively improve the process effect.

[0033] The semiconductor process equipment and exhaust system thereof provided in the embodiments of the present application are described in detail below with reference to specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0034] Please refer to FIG. 2 . The exhaust system of the semiconductor process equipment disclosed in the embodiment of the present application is used to exhaust the reaction chamber 100 so as to maintain the reaction chamber 100 in a high vacuum state.

[0035] The exhaust system includes a first vacuum line 210, a second vacuum line 220, a vacuum pump 300, a vacuum proportional valve 230 and a first pressure detection device 400, wherein the inlet end of the first vacuum line 210 is used to connect to the reaction chamber 100, and the vacuum proportional valve 230 is arranged between the outlet end of the first vacuum line 210 and the inlet end of the second vacuum line 220, that is, the air inlet of the vacuum proportional valve 230 is connected to the first vacuum line 210, and the air outlet of the vacuum proportional valve 230 is connected to the second vacuum line 220; and the outlet end of the second vacuum line 220 is connected to the vacuum pump 300. Thus, when the vacuum pump 300 is operating, it applies suction to the reaction chamber 100 through the second vacuum line 220 and the first vacuum line 210, discharging gas from the reaction chamber 100 and reducing the pressure therein. Simultaneously, the vacuum proportional valve 230 is suitable for high vacuum environments and serves to stabilize and regulate the flow rate of gas within the first vacuum line 210 and the second vacuum line 220, thereby maintaining the pressure in the reaction chamber 100 at a stable high vacuum state. In some embodiments, the pressure in the reaction chamber 100 can be stably maintained at 1 mTorr.

[0036] A first pressure detection device 400 is disposed in the first vacuum line 210 and is used to detect the pressure value of the first vacuum line 210. The first pressure detection device 400 can be a pressure gauge or other pressure-detecting device. The opening of the vacuum proportional valve 230 can be adjusted based on the pressure value detected by the first pressure detection device 400. In some embodiments, the exhaust system can adjust the opening of the vacuum proportional valve 230 based on the pressure value detected by the first pressure detection device 400. Furthermore, in some embodiments, the exhaust system can include a control device that is in communication with the first pressure detection device 400 and the vacuum proportional valve 230, respectively. The control device automatically adjusts the opening of the vacuum proportional valve 230 based on the pressure value detected by the first pressure detection device 400. Alternatively, the opening of the vacuum proportional valve 230 can be manually adjusted based on the pressure value detected by the first pressure detection device 400.

[0037] In the embodiment of the present application, the vacuum pump 300 applies a suction force to the reaction chamber 100 to reduce the air pressure value of the reaction chamber 100. Moreover, the vacuum proportional valve 230 is more suitable for a high vacuum environment and can achieve stable and accurate adjustment in a high vacuum environment. Therefore, through the vacuum proportional valve 230, it can not only ensure that the vacuum pump 300 applies a stable suction force to the reaction chamber 100, but also ensure that the pressure value detected by the first pressure detection device 400 is stably maintained in a high vacuum state, that is, the air pressure of the reaction chamber 100 is stably maintained in a high vacuum state. In this way, the reaction chamber 100 can generate highly active free radicals through hydrogen and oxygen in a high vacuum state, and can quickly generate an oxide film with high density and process uniformity. Compared with the oxidation technology used in a normal pressure or slightly low pressure environment, the oxidation technology used in a high vacuum environment can better meet process requirements and improve process effects.

[0038] During the initial stage of vacuum pumping gas from reaction chamber 100 by vacuum pump 300, vacuum proportional valve 230 is opened, and the pumped gas passes through first vacuum line 210, vacuum proportional valve 230, and second vacuum line 220 in sequence. The pressure in reaction chamber 100 drops rapidly, accompanied by severe pressure fluctuations. This phenomenon can cause vibration of the wafers in reaction chamber 100, leading to wafer cracking.

[0039] To solve the above problems, the exhaust system also includes a slow pumping pipeline 500, a first switch valve 510, and a flow limiting device. The first end of the slow pumping pipeline 500 is connected to the first vacuum pipeline 210, and the second end of the slow pumping pipeline 500 is connected to the second vacuum pipeline 220. The flow limiting device and the first switch valve 510 are both arranged in the slow pumping pipeline 500. The first switch valve 510 is used to control the on-off of the slow pumping pipeline 500, and the flow limiting device is used to control the flow rate of gas flowing through the slow pumping pipeline 500. The flow limiting device is connected in series with the first switch valve 510, and the flow limiting device is connected in parallel with the vacuum proportional valve 230. Specifically, the slow pumping pipeline 500 includes a first slow pumping pipe section and a second slow pumping pipe section. The first switch valve 510 is arranged between the first slow pumping pipe section and the second slow pumping pipe section. The first slow pumping pipe section is connected to the first vacuum pipeline 210, and the second slow pumping pipe section is connected to the second vacuum pipeline 220. The flow limiting device is arranged in the second slow pumping pipe section. In some embodiments, the first switch valve 510 may be a pneumatic valve or other switch valve that performs an opening and closing function.

[0040] In this embodiment, in the initial stage when the vacuum pump 300 is pumping the gas in the reaction chamber 100, the vacuum proportional valve 230 is closed and the first switch valve 510 is opened, so that the pumped gas passes through the first vacuum line 210, the slow pumping line 500 and the second vacuum line 220 in sequence, and the pumping speed is controlled at a low level by the current limiting device, so that the gas pressure in the reaction chamber 100 can transition from atmospheric pressure to low pressure relatively smoothly, avoiding violent fluctuations in gas pressure due to a high pumping speed, which may cause vibration or even damage to the wafer, thereby ensuring the process effect.

[0041] In some embodiments, the flow limiting device may include only a throttle valve 530, and the range of gas flow through the slow withdrawal pipeline 500 can be controlled by adjusting the throttle valve 530. Furthermore, in some embodiments, the throttle valve 530 may be a needle valve. In other embodiments, the flow limiting device may also include a first flow restrictor 520, which is connected in series with the throttle valve 530 and is used to limit the maximum gas flow through the slow withdrawal pipeline 500. It should be noted that the maximum gas flow limited by the first flow restrictor 520 is less than the maximum value of the gas flow range that can be controlled by the throttle valve 530. In this embodiment, the throttle valve 530 is combined with the first flow restrictor 520 to limit the gas flow range and the maximum gas flow through the slow pumping line 500, thereby avoiding the situation where the gas flow through the slow pumping line 500 is too large due to relying solely on the throttle valve 530. This effectively reduces the gas flow in the slow pumping line 500 and the pumping speed, which is conducive to a smoother transition of the gas pressure in the reaction chamber 100 from atmospheric pressure to low pressure.

[0042] After the reaction chamber 100 is in a vacuum state and the process is completed, the pressure in the reaction chamber 100 needs to be restored to atmospheric pressure. At this time, the vacuum proportional valve 230 is closed and a gas such as nitrogen is introduced into the reaction chamber 100 to increase the pressure in the reaction chamber 100. However, there are cases where the pressure in the reaction chamber 100 is greater than atmospheric pressure due to abnormal gas intake.

[0043] To solve the above problems, the exhaust system also includes a first pressure relief pipe 610, a second pressure relief pipe 620 and a second switch valve 611. The inlet end of the first pressure relief pipe 610 is connected to the first vacuum pipeline 210, and the outlet end of the first pressure relief pipe 610 is connected to the second pressure relief pipe 620. The second switch valve 611 is arranged between the first pressure relief pipe 610 and the second pressure relief pipe 620, that is, the outlet end of the first pressure relief pipe 610 is connected to the inlet end of the second switch valve 611, and the inlet end of the second pressure relief pipe 620 is connected to the outlet end of the second switch valve 611. The second pressure relief pipe 620 can be connected to the plant exhaust system, and the second switch valve 611 can control whether the first pressure relief pipe 610 and the second pressure relief pipe 620 are connected. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value, it means that the air pressure in the reaction chamber 100 is too high at this time, and the second switch valve 611 is in the open state, so that the gas in the reaction chamber 100 can be discharged in sequence through the first vacuum line 210, the first pressure relief pipe 610, and the second pressure relief pipe 620, thereby quickly reducing the air pressure in the reaction chamber 100. Among them, the first pressure value is greater than the atmospheric pressure value. Similarly, when the pressure value detected by the first pressure detection device 400 reaches the atmospheric pressure value, it means that the air pressure in the reaction chamber 100 has returned to the atmospheric pressure state and there is no need to continue exhausting. The second switch valve 611 is in the closed state. With this embodiment, the reaction chamber 100 can be quickly depressurized when overpressure occurs, thereby ensuring the safety of semiconductor process equipment.

[0044] In some embodiments, the second switch valve 611 can be a pneumatic valve or other switch valve that performs an opening and closing function; the second switch valve 611 can be communicatively connected to the first pressure detection device 400. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value, the second switch valve 611 automatically opens. Of course, the second switch valve 611 can also be manually controlled according to the pressure value detected by the first pressure detection device 400.

[0045] Of course, in other embodiments, the exhaust system may not be provided with the first pressure relief pipe 610, the second pressure relief pipe 620 and the second switch valve 611, and exhaust may be performed in other ways when overpressure occurs, such as directly providing a pressure relief device in the reaction chamber 100.

[0046] When the reaction chamber 100 is over-pressurized, the second on-off valve 611 is in an open state. If the first pressure relief pipe 610 is blocked or the second on-off valve 611 malfunctions, the gas in the reaction chamber 100 cannot be discharged through the first pressure relief pipe 610 and the second pressure relief pipe 620, and the pressure cannot be released in time. As a result, the reaction chamber 100 may experience problems due to prolonged over-pressure.

[0047] To solve the above problems, the exhaust system also includes a third pressure relief pipe 630 and a third switch valve 631. The inlet end of the third pressure relief pipe 630 is connected to the first vacuum pipeline 210, and the outlet end of the third pressure relief pipe 630 is connected to the second pressure relief pipe 620. The third switch valve 631 is arranged on the third pressure relief pipe 630, that is, the third pressure relief pipe 630 is connected in parallel with the first pressure relief pipe 610. When the first pressure relief pipe 610 cannot exhaust, the gas can be exhausted and pressure relieved through the third pressure relief pipe 630. At this time, the gas flows through the first vacuum pipeline 210, the third pressure relief pipe 630 and the second pressure relief pipe 620 in sequence before being discharged. In some embodiments, when the pressure value detected by the first pressure detection device 400 reaches the first pressure value mentioned above and the second switch valve 611 is in a closed state, it indicates that the reaction chamber 100 is overpressured and the second switch valve 611 is faulty. At this time, the third switch valve 631 is in an open state, and exhaust and pressure relief are performed through the third pressure relief pipe 630. Of course, when the first pressure relief pipe 610 cannot exhaust, the flow rate of the first pressure relief pipe 610 is relatively small, so the flow rate of the first pressure relief pipe 610 can be detected by a flow detection element. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value and the flow rate of the first pressure relief pipe 610 is relatively small, the third switch valve 631 is in an open state.

[0048] In this embodiment, when the first pressure relief pipe 610 is unable to exhaust and relieve pressure, the third switch valve 631 is opened to connect the third pressure relief pipe 630, and the third pressure relief pipe 630 is used for exhaust and pressure relief. In this way, the provision of a two-stage pressure relief pipeline is more secure, ensuring that the reaction chamber 100 can be exhausted and relieved of pressure in a timely manner, ensuring that the semiconductor process equipment is in a safe state.

[0049] In some embodiments, the third switch valve 631 can be a pneumatic valve or other switch valve that performs an opening and closing function; the third switch valve 631 is respectively communicated with the second switch valve 611 and the first pressure detection device 400 (or the flow detection element). When the pressure value detected by the first pressure detection device 400 reaches the first pressure value and the second switch valve 611 is in a closed state (or the flow of the first pressure relief pipe 610 is small), the third switch valve 631 automatically opens. Of course, the third switch valve 631 can also be manually controlled according to the pressure value detected by the first pressure detection device 400 and the opening and closing state of the second switch valve 611 (or the flow value of the first pressure relief pipe 610 detected by the flow detection element).

[0050] In some embodiments, the exhaust system further includes a first one-way valve 612 disposed in the second pressure relief pipe 620. The first one-way valve 612 connects the second pressure relief pipe 620 from its inlet to its outlet. Furthermore, in some embodiments, the first one-way valve 612 is disposed between the second pressure relief pipe 620 and the second on-off valve 611. In this embodiment, the first one-way valve 612 restricts the direction of airflow within the second pressure relief pipe 620, preventing external air from flowing back into the second pressure relief pipe 620 from its outlet, thereby preventing the exhaust from being affected. Of course, in other embodiments, the second pressure relief pipe 620 may not be provided with the first one-way valve 612.

[0051] The outlet end of the second pressure relief pipe 620 is connected to the factory exhaust system, and there are many pollutants inside the factory exhaust system. When the first pressure relief pipe 610 and the second pressure relief pipe 620 are not exhausted, the pollutants in the factory exhaust system will spread to the second pressure relief pipe 620, causing long-term pipe blockage and affecting the pressure relief and exhaust function.

[0052] To address the above issues, the exhaust system further includes a first air supply line 710 and a fourth on-off valve 711. The inlet of the first air supply line 710 is used to introduce a purge gas, which can be nitrogen or other gases capable of achieving a purge effect. The outlet of the first air supply line 710 is connected to the second pressure relief pipe 620 to allow the purge gas to purge the second pressure relief pipe 620. The fourth on-off valve 711 is disposed on the first air supply line 710 to control whether the first air supply line 710 is open or closed. Furthermore, in some embodiments, the fourth on-off valve 711 can be a manual valve that is manually opened or closed. Alternatively, the fourth on-off valve 711 can be another on-off valve that performs an opening and closing function. With this embodiment, when pollutants diffuse into the second pressure relief pipe 620, the fourth switch valve 711 can be opened, and the purge gas can be blown through the first air supply pipeline 710 to purge the second pressure relief pipe 620, gradually blowing the pollutants in the second pressure relief pipe 620 to the outside of the second pressure relief pipe 620, thereby preventing the pollutants from clogging the second pressure relief pipe 620, ensuring that the second pressure relief pipe 620 is unobstructed, and ensuring that the exhaust system can perform pressure relief and exhaust normally.

[0053] In some embodiments, the exhaust system further includes at least one of a pressure regulating valve 712 and a flow regulating element 713, and at least one of the pressure regulating valve 712 and the flow regulating element 713 is disposed in the first air supply line 710. Furthermore, in some embodiments, only the pressure regulating valve 712 may be disposed in the first air supply line 710, only the flow regulating element 713 may be disposed in the first air supply line 710, or both the pressure regulating valve 712 and the flow regulating element 713 may be disposed in the first air supply line 710, i.e., the pressure regulating valve 712 and the flow regulating element 713 are connected in series, the pressure regulating valve 712 can adjust the pressure value of the first air supply line 710 to a first pressure range, and the flow regulating element 713 can adjust the flow rate of the first air supply line 710 to a first flow range. In addition, in some embodiments, the exhaust system also includes a pressure detection element 715, which is arranged in the first air supply pipeline 710 to detect the pressure value of the first air supply pipeline 710. The opening of the pressure regulating valve 712 can be adjusted according to the pressure value detected by the pressure detection element 715, for example, so that the pressure of the first air supply pipeline 710 is maintained at 0.4MPa-0.6MPa; the flow regulating element 713 can include a flow meter, and is adjusted according to the flow value displayed by the flow meter so that the flow of the first air supply pipeline 710 reaches about 0.51L.

[0054] By adopting this embodiment, the pressure of the first air supply pipeline 710 can be maintained within a relatively small range by means of the pressure regulating valve 712, and the flow rate of the first air supply pipeline 710 can be maintained within a relatively small flow rate range by means of the flow regulating element 713, so that the purge gas can stably purge the second pressure relief pipe 620, avoiding excessive flow rate and / or pressure of the purge gas and considering the pressure relief problem of the purge gas.

[0055] Of course, in other embodiments, the first air supply pipeline 710 may not be provided with the pressure regulating valve 712 and / or the flow regulating element 713 .

[0056] In some embodiments, the exhaust system further includes a second one-way valve 714 disposed in the first air supply line 710. The second one-way valve 714 directs the flow of air from the inlet of the first air supply line 710 to the outlet of the first air supply line 710. In this embodiment, the second one-way valve 714 restricts the direction of airflow within the first air supply line 710, preventing gas within the second pressure relief pipe 620 from flowing back into the first air supply line 710 from the outlet of the first air supply line 710, thereby preventing the purge effect. Of course, in other embodiments, the first air supply line 710 may not be provided with the second one-way valve 714.

[0057] During the process of the vacuum pump 300 applying suction to the reaction chamber 100, if the vacuum proportional valve 230 fails or malfunctions, the vacuum proportional valve 230 needs to be disassembled for inspection. At this time, the second vacuum line 220 is in a vacuum state. To ensure the safety of the equipment, the air pressure in the second vacuum line 220 needs to be restored to atmospheric pressure before the vacuum proportional valve 230 is disassembled. In order to restore the air pressure of the second vacuum line 220 to atmospheric pressure, in some embodiments, the exhaust system also includes a second air supply line 720, a fifth switch valve 721 and a second pressure detection device 221. The inlet end of the second air supply line 720 is used to introduce gas, and the outlet end of the second air supply line 720 is connected to the second vacuum line 220. The fifth switch valve 721 is arranged on the second air supply line 720. The second pressure detection device 221 is arranged on the second vacuum line 220 to detect the pressure value of the second vacuum line 220. The fifth switch valve 721 changes according to the pressure value detected by the second pressure detection device 221, so as to use the second air supply line 720 to replenish gas to the second vacuum line 220, so that the air pressure of the second vacuum line 220 is restored to the atmospheric pressure value. The fifth on-off valve 721 can be a pneumatic valve or other on-off valve that functions as an open or close valve. The second pressure detection device 221 can be a pressure gauge, vacuum gauge, or other component capable of detecting pressure. Furthermore, in some embodiments, the second pressure detection device 221 can be a vacuum gauge with a range of 0-1000 Torr. In this embodiment, the second air supply line 720 is used to replenish air in the second vacuum line 220, restoring the air pressure in the second vacuum line 220 to atmospheric pressure. This facilitates the removal of the vacuum proportional valve 230 and ensures equipment safety.

[0058] In addition, in some embodiments, the second pressure detection device 221 can be communicatively connected with the fifth switch valve 721. When the pressure detected by the second pressure detection device 221 reaches the atmospheric pressure value, the fifth switch valve 721 is automatically closed, and the second air supply pipeline 720 stops supplying gas to the second vacuum pipeline 220; of course, the fifth switch valve 721 can also be manually controlled according to the pressure value detected by the second pressure detection device 221.

[0059] In some embodiments, the exhaust system further includes a second restrictor 722 disposed in the second air supply line 720. Thus, the second restrictor 722 controls the maximum air flow through the second air supply line 720, thereby preventing excessive air velocity in the second air supply line 720 from causing overpressure in the second vacuum line 220. Of course, in other embodiments, the second air supply line 720 may not be provided with the second restrictor 722, and the air flow in the second air supply line 720 may be controlled by controlling the air flow at the inlet of the second air supply line 720.

[0060] In some embodiments, the exhaust system further includes a third one-way valve 723 disposed in the second air supply line 720. The third one-way valve 723 directs the flow of gas from the inlet of the second air supply line 720 to the outlet of the second air supply line 720. Thus, the third one-way valve 723 restricts the direction of airflow within the second air supply line 720, preventing gas within the second air supply line 720 from flowing backward from the outlet of the second air supply line 720 into the second air supply line 720, thereby preventing the gas from affecting the inflation of the second vacuum line 220. Of course, in other embodiments, the second air supply line 720 may not be provided with the third one-way valve 723.

[0061] In some embodiments, the exhaust system further includes a vacuum branch 222 and a tenth on-off valve 223. The first end of the vacuum branch 222 is in communication with the second vacuum line 220. The second pressure detection device 221 is connected to the second end of the vacuum branch 222. The tenth on-off valve 223 is disposed in the vacuum branch 222. Furthermore, in some embodiments, the tenth on-off valve 223 may be a pneumatic valve or other on-off valve that functions as an opening and closing valve. When the vacuum proportional valve 230 malfunctions, the tenth on-off valve 223 is opened, the second pressure detection device 221 detects the pressure in the second vacuum line 220, and then the fifth on-off valve 721 is opened. The second air supply line 720 begins to supply air to the second vacuum line 220, and the pressure in the second vacuum line 220 gradually increases. When the pressure value detected by the second pressure detection device 221 is within the range of 758 Torr to 762 Torr, indicating that the second vacuum line 220 has returned to atmospheric pressure, the fifth on-off valve 721 is closed, and air supply is stopped. At this point, the vacuum proportional valve 230 can be safely removed.

[0062] In some embodiments, as shown in FIG2 , the inlet of the second air supply line 720 is connected to the first air supply line 710 , meaning that the first air supply line 710 and the second air supply line 720 can share a common gas source (i.e., GN2). Thus, while nitrogen is introduced into the first air supply line 710 , it also flows through the second air supply line 720 . In this manner, the nitrogen can serve as both a purge gas and a pressure-enhancing agent in the second vacuum line 220 . Furthermore, in some embodiments, the connection between the second air supply line 720 and the first air supply line 710 is located between the pressure regulating valve 712 and the outlet of the first air supply line 710 .

[0063] In some embodiments, the exhaust system further includes a sixth on-off valve 810 . The inlet of the sixth on-off valve 810 is connected to the first seal detection device, and the outlet of the sixth on-off valve 810 is connected to the first vacuum line 210 . Furthermore, in some embodiments, the sixth on-off valve 810 can be a manual valve or other on-off valve that functions as an opening and closing valve; the first seal detection device can be a helium mass spectrometer. In this embodiment, the inlet of the sixth on-off valve 810 serves as a seal detection port. After the equipment is installed, the inlet of the sixth on-off valve 810 can be connected to the first seal detection device, which can then be used to test the seal of the first vacuum line 210.

[0064] In some embodiments, the exhaust system further includes a seventh on-off valve 820 . The inlet of the seventh on-off valve 820 is connected to a second seal detection device, and the outlet of the seventh on-off valve 820 is connected to the second vacuum line 220 . Furthermore, in some embodiments, the seventh on-off valve 820 can be a manual valve or other on-off valve that functions as an opening and closing valve; the second seal detection device can be a helium mass spectrometer. In this embodiment, the inlet of the seventh on-off valve 820 serves as a seal detection port. After the equipment is installed, the inlet of the seventh on-off valve 820 can be connected to the second seal detection device, which can then be used to test the seal of the second vacuum line 220.

[0065] Of course, in other embodiments, the exhaust system may not be provided with the sixth switch valve 810 and / or the seventh switch valve 820, and the first vacuum pipeline 210 and the second vacuum pipeline 220 may be tested for sealing before the equipment is installed, without the need to connect the first sealing detection device and / or the second sealing detection device for sealing testing.

[0066] In some embodiments, the first pressure detection device 400 includes a second vacuum gauge 420, which can have a measurement range of 0-1000 Torr. The exhaust system also includes a second branch 920, a first end of which is connected to the first vacuum line 210, and a second end of which is connected to the second vacuum gauge 420. In this way, the second vacuum gauge 420 detects the pressure of the first vacuum line 210 by detecting the pressure of the second branch 920. Furthermore, the second vacuum gauge 420 has a large measurement range and can effectively measure the pressure of the reaction chamber 100 under vacuum and atmospheric pressure. However, the detection accuracy of the second vacuum gauge 420 is low.

[0067] In other embodiments, the first pressure detection device 400 further includes a first vacuum gauge 410, the range of the first vacuum gauge 410 being smaller than the range of the second vacuum gauge 420, and the exhaust system further includes a first branch 910 and an eighth switch valve 830. The first end of the first branch 910 is connected to the first vacuum line 210, and the second end of the first branch 910 is connected to the first vacuum gauge 410. The eighth switch valve 830 is disposed on the first branch 910, and the eighth switch valve 830 controls whether the first branch 910 is conductive or cutoff. Furthermore, in some embodiments, the eighth switch valve 830 may be a pneumatic valve or other switch valve that performs an opening and closing function. When the pressure value detected by the second vacuum gauge 420 is greater than the second pressure value, the eighth switch valve 830 is in a closed state. At this time, the second vacuum gauge 420 effectively measures the pressure values ​​(10Torr-760Torr) of the first vacuum pipeline 210 under medium vacuum, low vacuum and atmospheric pressure conditions, that is, the pressure value of the reaction chamber 100; when the pressure value detected by the second vacuum gauge 420 is less than or equal to the second pressure value, the eighth switch valve 830 is in an open state. At this time, the first vacuum gauge 410 accurately measures and feeds back the pressure value of the first vacuum pipeline 210 under high vacuum conditions (1mTorr-10Torr), that is, the pressure value of the reaction chamber 100. Among them, the second pressure value is the maximum pressure value under the high vacuum state. In some embodiments, the second pressure value is 10 Torr. The range of the first vacuum gauge 410 can be 0-10 Torr. When the pressure value detected by the second vacuum gauge 420 is greater than 10 Torr, it means that the pressure of the second vacuum line 220 exceeds the maximum pressure value under the high vacuum state. At this time, there is no need to accurately detect the air pressure value of the reaction chamber 100. At the same time, in order to avoid damage to the first vacuum gauge 410, the eighth switch valve 830 is closed, the first vacuum gauge 410 does not perform pressure detection, and only the second vacuum gauge 420 performs pressure detection.

[0068] With this embodiment, when the reaction chamber 100 is in a high vacuum state, the gas pressure in the reaction chamber 100 is relatively low, and the first vacuum gauge 410 is used to accurately detect the gas pressure value of the reaction chamber 100 in the high vacuum state, with high detection accuracy. When the reaction chamber 100 is in a medium vacuum, low vacuum, or atmospheric pressure state, when the gas pressure in the reaction chamber 100 is relatively high, the second vacuum gauge 420 is used to effectively detect the gas pressure value of the reaction chamber 100. At the same time, by providing the eighth switch valve 830, it is possible to prevent the first vacuum gauge 410 from being damaged due to over-range detection.

[0069] In some embodiments, the first pressure detection device 400 further includes a differential pressure gauge 430, and the exhaust system further includes a third branch 930 and a ninth switch valve 840. The first end of the third branch 930 is connected to the first vacuum line 210, the second end of the third branch 930 is connected to the first end of the differential pressure gauge 430, and the second end of the differential pressure gauge 430 is connected to the external atmosphere. The ninth switch valve 840 is arranged on the third branch 930, and the ninth switch valve 840 controls the on and off of the third branch 930. When the difference between the pressure value detected by the second vacuum gauge 420 and the atmospheric pressure value is less than the first difference, it indicates that the pressure of the reaction chamber 100 is close to the atmospheric pressure value, the ninth switch valve 840 is in an open state, the third branch 930 is connected, and the differential pressure gauge 430 begins to detect the difference between the second vacuum line 220 and the atmospheric pressure value. At this time, the opening of the vacuum proportional valve 230 is adjusted according to the pressure difference value of the differential pressure gauge 430 until the pressure difference value of the differential pressure gauge 430 is zero, indicating that the reaction chamber 100 has returned to the atmospheric pressure value. Due to regional variations in environmental conditions, the atmospheric pressure in some areas is lower, while in others it is higher. That is, the atmospheric pressure is not 760 Torr. If the reaction chamber 100 is restored to 760 Torr solely based on the second vacuum gauge 420 , it indicates that the reaction chamber 100 has not yet reached atmospheric pressure. Therefore, the opening of the vacuum proportional valve 230 is adjusted based on the difference between the atmospheric pressure in the reaction chamber 100 and the atmospheric pressure using the differential pressure gauge 430 to ensure that the reaction chamber 100 is accurately restored to atmospheric pressure.

[0070] Of course, in other embodiments, the first pressure detection device 400 may not be provided with a differential pressure gauge 430, and the opening of the vacuum proportional valve 230 may be adjusted according to the pressure value detected by the second vacuum gauge 420 until the pressure value detected by the second vacuum gauge 420 reaches 760 Torr.

[0071] In summary, the use process of the exhaust system of the semiconductor process equipment disclosed in the embodiment of the present application is as follows:

[0072] After the equipment is installed, the sealing of the first vacuum line 210 and the second vacuum line 220 are first tested. Specifically, to test the sealing of the first vacuum line 210, close the vacuum proportional valve 230, connect a first sealing detection device, such as a helium mass spectrometer, to the inlet of the sixth on-off valve 810, and close the eighth on-off valve 830, the ninth on-off valve 840, the first on-off valve 510, the second on-off valve 611, and the third on-off valve 631 to seal the first vacuum line 210. The sixth on-off valve 810 is then opened, and the first sealing detection device is activated to test the leak rate of the first vacuum line 210. If the leak rate meets the set standard, the sealing of the first vacuum line 210 is qualified. The sixth on-off valve 810 is then closed, and the first sealing detection device is removed. If the leak rate does not meet the set standard, it needs to be reinstalled to ensure the sealing.

[0073] To test the seal of the second vacuum line 220, close the vacuum proportional valve 230, connect a second sealing device, such as a helium mass spectrometer, to the inlet of the seventh on-off valve 820, close the tenth on-off valve 223, the first on-off valve 510, and the fifth on-off valve 721, and shut off the vacuum pump 300, sealing the second vacuum line 220. The seventh on-off valve 820 is then opened, and the second sealing detection device is activated to test the leak rate of the second vacuum line 220. If the leak rate meets the set standard, the seal of the second vacuum line 220 is acceptable. The seventh on-off valve 820 is then closed, and the second sealing detection device is removed. If the leak rate does not meet the set standard, it needs to be reinstalled to ensure the seal.

[0074] After the sealing test of the first vacuum line 210 and the second vacuum line 220 passes, the process step can be entered. At this time, the sixth on-off valve 810, the seventh on-off valve 820, the eighth on-off valve 830, the ninth on-off valve 840, the second on-off valve 611, the third on-off valve 631, and the tenth on-off valve 223 are closed. In the initial stage of the vacuum pump 300 pumping gas from the reaction chamber 100, the pressure in the reaction chamber 100 drops rapidly, which may cause vibration of the wafers in the reaction chamber 100. Therefore, the vacuum proportional valve 230 is first closed, the first on-off valve 510 is opened, the throttle valve 530 is adjusted to a relatively small opening, and the first flow restrictor 520 is used to limit the maximum gas flow of the slow pump line 500. Then, the vacuum pump 300 is turned on. At this time, the gas in the reaction chamber 100 passes through the first vacuum line 210, the slow pump line 500, the second vacuum line 220, and the vacuum pump 300 in sequence, and the pressure in the reaction chamber 100 gradually decreases. During this process, the second vacuum gauge 420 monitors the pressure of the reaction chamber 100 in real time. When the pressure transitions smoothly, the pressure within the reaction chamber 100 no longer fluctuates violently and begins to decrease evenly. At this point, the first on-off valve 510 is closed and the vacuum proportional valve 230 is opened. Gas no longer flows through the slow pump line 500, but instead flows sequentially through the first vacuum line 210, the second vacuum line 220, and the vacuum pump 300. When the pressure within the reaction chamber 100 drops below 10 Torr, the eighth on-off valve 830 is opened. The first vacuum gauge 410 then accurately measures the pressure within the reaction chamber 100 and transmits the measured pressure value to the vacuum proportional valve 230. The valve adjusts the opening of the vacuum proportional valve 230 based on the pressure value, maintaining the pressure within the reaction chamber 100 at a stable level of 1 mTorr, thus providing high vacuum conditions for the subsequent oxidation process within the reaction chamber 100.

[0075] After the oxidation process is completed, the air pressure in the reaction chamber 100 needs to be restored to atmospheric pressure. At this time, the vacuum proportional valve 230 and the eighth switch valve 830 are closed to prevent the first vacuum gauge 410 from being damaged due to pressure exceeding the range. Nitrogen is continuously replenished in the reaction chamber 100, and the second vacuum gauge 420 detects the pressure in real time. When the pressure value returns to 720 Torr, the ninth switch valve 840 is opened. At this time, the differential pressure gauge 430 compares the difference between the pressure of the reaction chamber 100 and the atmospheric pressure in real time. When the difference value of the differential pressure gauge 430 is zero, it indicates that the reaction chamber 100 has returned to atmospheric pressure. At this time, the replenishment of nitrogen into the reaction chamber 100 is stopped.

[0076] If the differential value on the pressure gauge 430 remains above zero due to abnormal air intake into the reaction chamber 100, indicating that the pressure in the reaction chamber 100 exceeds atmospheric pressure, the second on-off valve 611 opens, and the first one-way valve 612 also opens simultaneously. The nitrogen in the reaction chamber 100 is discharged into the facility exhaust system through the first and second pressure relief pipes 610 and 620, thereby promptly relieving the pressure in the reaction chamber 100 and reducing the pressure in the reaction chamber 100 to atmospheric pressure. If the first pressure relief pipe 610 fails and is unable to relieve pressure, the differential value on the pressure gauge 430 will continue to increase. When the differential value reaches a second set value, such as 25 Torr, the third on-off valve 631 opens, and the nitrogen in the reaction chamber 100 is discharged into the facility exhaust system through the third and second pressure relief pipes 630 and 620, ensuring smooth pressure relief in the reaction chamber 100 and ensuring equipment safety.

[0077] In addition, when pollutants in the factory exhaust system diffuse into the second pressure relief pipe 620 and cause blockage, the pressure relief and exhaust function will be affected. At this time, the fourth switch valve 711 is opened, and the purge gas enters the second pressure relief pipe 620 through the first air supply pipeline 710. The purge gas purges the second pressure relief pipe 620, gradually blowing the pollutants in the second pressure relief pipe 620 to the outside of the second pressure relief pipe 620, ensuring that the second pressure relief pipe 620 is unobstructed.

[0078] During the process of the vacuum pump 300 pumping the reaction chamber 100, if the vacuum proportional valve 230 fails or malfunctions, the vacuum proportional valve 230 needs to be disassembled for maintenance. At this time, the second vacuum pipeline 220 is in a vacuum state and the vacuum proportional valve 230 cannot be directly disassembled. To ensure the safety of the equipment, the fifth switch valve 721 and the tenth switch valve 223 are opened, and the second air supply pipeline 720 supplies nitrogen to the second vacuum pipeline 220. At the same time, the second pressure detection device 221 detects the pressure value of the second vacuum pipeline 220. When the pressure value of the second vacuum pipeline 220 reaches the atmospheric pressure value, the fifth switch valve 721 is closed and the nitrogen supply is stopped. At this time, the vacuum proportional valve 230 can be safely disassembled.

[0079] Based on the exhaust system disclosed in the embodiments of the present application, the embodiments of the present application further provide a semiconductor process apparatus, comprising a reaction chamber 100 and the semiconductor process apparatus of the above embodiments, wherein the inlet end of the first vacuum line 210 is in communication with the reaction chamber 100. In some embodiments, the semiconductor process apparatus may be a vertical furnace apparatus, and the reaction chamber 100 of the vertical furnace apparatus is used to perform a high vacuum oxidation process.

[0080] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. An exhaust system for semiconductor process equipment, characterized in that: It includes a first vacuum pipeline, a second vacuum pipeline, a vacuum pump, a vacuum proportional valve and a first pressure detection device, wherein the inlet end of the first vacuum pipeline is used to connect to the reaction chamber, the first pressure detection device is arranged on the first vacuum pipeline to detect the pressure value of the first vacuum pipeline, the vacuum proportional valve is arranged between the outlet end of the first vacuum pipeline and the inlet end of the second vacuum pipeline, the outlet end of the second vacuum pipeline is connected to the vacuum pump, and the opening of the vacuum proportional valve can be adjusted according to the pressure value detected by the first pressure detection device.

2. The exhaust system according to claim 1, characterized in that The exhaust system also includes a slow pumping pipeline, a first switch valve and a current limiting device. The first end of the slow pumping pipeline is connected to the first vacuum pipeline, and the second end of the slow pumping pipeline is connected to the second vacuum pipeline. The current limiting device and the first switch valve are both arranged in the slow pumping pipeline.

3. The exhaust system according to claim 2, characterized in that: The flow limiting device includes a first flow limiter and a throttle valve.

4. The exhaust system according to claim 1, characterized in that: The exhaust system also includes a first pressure relief pipe, a second pressure relief pipe and a second switch valve, the inlet end of the first pressure relief pipe is connected to the first vacuum pipeline, the outlet end of the first pressure relief pipe is connected to the second pressure relief pipe, and the second switch valve is arranged between the first pressure relief pipe and the second pressure relief pipe.

5. The exhaust system according to claim 4, characterized in that The exhaust system also includes a third pressure relief pipe and a third switch valve, the inlet end of the third pressure relief pipe is connected to the first vacuum pipeline, the outlet end of the third pressure relief pipe is connected to the second pressure relief pipe, and the third switch valve is arranged on the third pressure relief pipe.

6. The exhaust system according to claim 4, characterized in that The exhaust system further includes a first one-way valve, which is disposed on the second pressure relief pipe and connects the second pressure relief pipe in a direction from an inlet end of the second pressure relief pipe to an outlet end of the second pressure relief pipe.

7. The exhaust system according to claim 4, characterized in that The exhaust system also includes a first air supply pipeline and a fourth switch valve. The inlet end of the first air supply pipeline is used to introduce purge gas. The outlet end of the first air supply pipeline is connected to the second pressure relief pipe so that the purge gas can purge the second pressure relief pipe. The fourth switch valve is arranged on the first air supply pipeline. The fourth switch valve controls the first air supply pipeline to be connected or disconnected.

8. The exhaust system according to claim 7, characterized in that The exhaust system further includes at least one of a pressure regulating valve and a flow regulating element, and at least one of the pressure regulating valve and the flow regulating element is disposed in the first air supply pipeline.

9. The exhaust system according to claim 7, characterized in that The exhaust system further includes a second one-way valve, which is disposed on the first air supply pipeline and connects the first air supply pipeline in a direction from an inlet end of the first air supply pipeline to an outlet end of the first air supply pipeline.

10. The exhaust system according to any one of claims 1 to 9, characterized in that The exhaust system also includes a second air supply pipeline, a fifth switch valve and a second pressure detection device. The inlet end of the second air supply pipeline is used to introduce gas, and the outlet end of the second air supply pipeline is connected to the second vacuum pipeline. The fifth switch valve is arranged in the second air supply pipeline. The second pressure detection device is arranged in the second vacuum pipeline to detect the pressure value of the second vacuum pipeline. The state of the fifth switch valve changes according to the pressure value detected by the second pressure detection device.

11. The exhaust system according to claim 10, characterized in that The exhaust system also includes a second restrictor, which is arranged on the second air supply pipeline; and / or the exhaust system also includes a third one-way valve, which is arranged on the second air supply pipeline, and the third one-way valve conducts the second air supply pipeline in a direction from the inlet end of the second air supply pipeline to the outlet end of the second air supply pipeline.

12. The exhaust system according to any one of claims 1 to 9, characterized in that The exhaust system further comprises a sixth switch valve, wherein an inlet end of the sixth switch valve is used to connect to the first sealing detection device, and an outlet end of the sixth switch valve is connected to the first vacuum pipeline; And / or, the exhaust system further comprises a seventh switch valve, an inlet end of the seventh switch valve is used to connect to the second sealing detection device, and an outlet end of the seventh switch valve is connected to the second vacuum pipeline.

13. The exhaust system according to any one of claims 1 to 9, characterized in that The first pressure detection device comprises a first vacuum gauge and a second vacuum gauge, and the measuring range of the first vacuum gauge is smaller than the measuring range of the second vacuum gauge; The exhaust system further includes a first branch, a second branch and an eighth switch valve, wherein the first end of the first branch and the first end of the second branch are both in communication with the first vacuum pipeline, the second end of the first branch is connected to the first vacuum gauge, the eighth switch valve is arranged on the first branch, and the second end of the second branch is connected to the second vacuum gauge; When the pressure value detected by the second vacuum gauge is greater than the second pressure value, the eighth switch valve is in a closed state; when the pressure value detected by the second vacuum gauge is less than or equal to the second pressure value, the eighth switch valve is in an open state.

14. The exhaust system according to claim 13, characterized in that The first pressure detection device further includes a differential pressure gauge, the exhaust system further includes a third branch and a ninth switch valve, the first end of the third branch is communicated with the first vacuum pipeline, the second end of the third branch is connected with the first end of the differential pressure gauge, the second end of the differential pressure gauge is communicated with the external atmosphere, and the ninth switch valve is arranged on the third branch; When the difference between the pressure value detected by the second vacuum gauge and the atmospheric pressure value is smaller than the first difference, the ninth switch valve is in an open state.

15. A semiconductor process equipment, characterized in that: It comprises a reaction chamber and the exhaust system according to any one of claims 1 to 14, wherein the inlet end of the first vacuum pipeline is connected to the reaction chamber.

Images