Substrate processing apparatus

Abstract

A substrate processing apparatus according to an aspect of the present invention may comprise: a process chamber having a reaction space formed therein; a chamber lid for covering the upper part of the process chamber; a substrate support unit disposed in the process chamber; a plasma source assembly including a first plasma source coupled onto the chamber lid and having a first toroidal channel having a first radius, a second plasma source having a second toroidal channel having a second radius, and an insulation member provided between the first and second plasma sources and the chamber lid; a gas injection unit having a gas injection plate for injecting the process gas activated by the plasma source assembly onto the substrate support unit; and a control unit for controlling the operation of a plasma power supply unit and a flow rate controller for controlling the supply amount of the process gas to be supplied.

Description

substrate processing device

[0001] The present invention relates to semiconductor manufacturing, and more particularly, to a substrate processing device using a plasma source.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By utilizing a remote plasma generator in this manner, desired reactants can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage to the substrate can be prevented.

[0003] Furthermore, to reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a structure is being studied that couples the plasma source to the gas injection unit of the process chamber. This structure can increase the activity ratio of radicals supplied from the plasma source to the substrate, thereby enhancing process efficiency.

[0004] However, the aforementioned remote plasma generator or plasma source had a problem in that radicals were not supplied uniformly to the circular substrate. That is, if the radicals supplied to the upper portion of the substrate were not supplied uniformly to the central and edge regions of the substrate, the problem of the uniformity of the thin film deposited on the upper portion of the substrate deteriorating occurred.

[0005] The present invention is intended to solve the aforementioned problems, and provides a substrate processing device capable of controlling the thickness of a thin film by controlling the amount of radicals supplied to each region of the substrate, thereby uniformly supplying radicals supplied to the upper portion of the substrate to the entire region of the substrate or supplying them differently to each region of the substrate. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device comprises: a process chamber having a reaction space formed therein; a chamber lid covering an upper portion of the process chamber; a substrate supporter disposed within the process chamber to support at least one substrate; a plasma source assembly including a first plasma source coupled to the chamber lid to supply an activated process gas to the reaction space and having a first toroidal channel formed therein having a first radius from the center of the chamber lid, a second plasma source having a second toroidal channel formed therein having a second radius smaller than that of the first plasma source, and an insulating member provided between the first plasma source, the second plasma source, and the chamber lid; a gas injection unit formed under the plasma source assembly and facing the substrate supporter, and having a gas injection plate formed therein for injecting a process gas activated by the plasma source assembly onto the substrate supporter; And a control unit for controlling the operation of a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source, and a flow rate controller for controlling the supply amount of process gas supplied from outside the process chamber; wherein the first plasma source is provided with a first opening through which process gas activated through the first plasma source is discharged, and the second plasma source includes a second opening through which process gas activated through the second plasma source is discharged, wherein the first opening and the second opening are formed at the same height.

[0007] According to some aspects of the present invention for solving the technical problem of the present invention, a substrate processing device comprises: a process chamber having a reaction space formed therein; a chamber lid covering an upper portion of the process chamber; a substrate supporter disposed within the process chamber to support at least one substrate; a plasma source assembly including a gas discharge plate coupled to the chamber lid, a first plasma source coupled to the gas discharge plate to supply an activated process gas to the reaction space and having a first toroidal channel formed therein, a second plasma source having a second toroidal channel formed therein, having a second radius smaller than that of the first plasma source, and an insulating member provided between the first plasma source, the second plasma source, and the gas discharge plate; and a gas injection unit formed under the plasma source assembly and facing the substrate supporter, and having a gas injection plate formed therein for injecting a process gas activated by the plasma source assembly onto the substrate supporter. And a control unit for controlling the operation of a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source, and a flow rate controller for controlling the supply amount of process gas supplied from outside the process chamber; wherein the first plasma source is provided with a first opening through which process gas activated through the first plasma source is discharged, and the second plasma source includes a second opening through which process gas activated through the second plasma source is discharged, wherein the first opening and the second opening are formed at the same height.

[0008] According to the substrate processing device, the first plasma source may include a first reaction body including a plurality of first body parts each having a plurality of first gas diffusion spaces formed therein, and a plurality of first insulating parts coupled between the plurality of first body parts, the plurality of first body parts being arranged such that the plurality of first gas diffusion spaces form the first toroidal channel as a whole; a plurality of first magnetic cores each surrounding the first reaction body and spaced apart from each other along the first toroidal channel; and a plurality of first windings arranged to wind the plurality of first magnetic cores, the plurality of first windings receiving power from the plasma power source to induce a magnetic force in the plurality of first magnetic cores; and the insulating member may include a plurality of first insulating members coupled to at least one surface of the first reaction body.

[0009] According to the substrate processing device, the first reaction body may include: a plurality of 1-1 body parts forming at least a portion of the first toroidal channel; a plurality of 1-2 body parts formed on sides of the plurality of 1-1 body parts as another portion of the first toroidal channel and having the plurality of first insulating parts coupled to the outside; a plurality of first gas inlets formed by penetrating at least a portion of the plurality of 1-1 body parts so that a process gas supplied from the outside is introduced into the plurality of first gas diffusion spaces; and a plurality of first openings formed in at least a portion of the plurality of 1-1 body parts and discharging the activated process gas from the first reaction body.

[0010] According to the substrate processing device, the second plasma source may include: a second reaction body formed inside the first reaction body and including a second body part having a second gas diffusion space formed therein, and a second insulating member coupled to the second body part, the second body part being arranged such that the second gas diffusion space forms the second toroidal channel as a whole; a second magnetic core surrounding the second reaction body and arranged in a portion of the second toroidal channel; a second winding arranged to wind the second magnetic core and receiving power from the plasma power source to induce a magnetic force in the second magnetic core; and a second insulating member coupled to at least one surface of the second reaction body.

[0011] According to the substrate processing device, the second reaction body may include: a 2-1 body portion forming a portion of the second toroidal channel; a 2-2 body portion formed to be connected to another portion of the second toroidal channel with the 2-1 body portion and having the second insulating portion coupled to the outside; at least one second gas inlet formed by penetrating at least a portion of the 2-1 body portion so that the process gas is introduced into the second gas diffusion space; and at least one second opening formed in at least a portion of the 2-1 body portion and discharging the activated process gas from the second reaction body.

[0012] According to the substrate processing device, the gas discharge plate may include a plurality of first gas discharge ports formed at positions corresponding to the first openings to supply a process gas activated from the first plasma source toward the gas injection unit; and at least one second gas discharge port formed at a position corresponding to the second openings to supply a process gas activated from the second plasma source toward the gas injection unit.

[0013] According to the above substrate processing device, each of the first gas outlet and the second gas outlet may be formed in the form of a plurality of holes.

[0014] According to the above substrate processing device, the control unit can control the operation of a first flow rate controller that controls the supply amount of the process gas flowing into the first plasma source, and a second flow rate controller that controls the supply amount of the process gas flowing into the second plasma source.

[0015] According to the above substrate processing device, the control unit can control the operation of the first flow controller and the second flow controller so that a greater amount of the process gas is activated in the first plasma source than in the second plasma source.

[0016] According to the above substrate processing device, the plasma power supply unit may include a first power supply unit that applies RF power to the first plasma source; and a second power supply unit that applies RF power to the second plasma source.

[0017] According to the substrate processing device, the control unit can control the power applied to the second power source to be greater than the power applied to the second power source so that a greater amount of the process gas is activated in the first plasma source than in the second plasma source.

[0018] According to some embodiments of the present invention, a substrate processing device configured as described above can control the amount of activated radicals supplied to a plasma source for each region, or the amount of radicals supplied to each region, thereby supplying radicals uniformly to the entire region of the substrate, or controlling the thickness of a thin film deposited on the substrate by controlling the amount of radicals supplied to each region, thereby providing a substrate processing device. Of course, the scope of the present invention is not limited by these effects.

[0019] FIG. 1 is a schematic diagram showing a substrate processing device according to one embodiment of the present invention.

[0020] FIG. 2 is a schematic diagram showing a substrate processing device according to another embodiment of the present invention.

[0021] FIG. 3 is a schematic top view showing a plasma source assembly according to one embodiment of the present invention.

[0022] FIG. 4 is a schematic cutaway perspective view showing the plasma source assembly of FIG. 2.

[0023] FIG. 5 is a perspective view showing a first plasma source according to one embodiment of the present invention.

[0024] FIG. 6 is a perspective view showing a second plasma source according to one embodiment of the present invention.

[0025] Figure 7 is a top view showing a gas discharge plate according to one embodiment of the present invention.

[0026] FIG. 8 is a schematic diagram showing power transmission of a first plasma source and a second plasma source in one embodiment of the present invention.

[0027] FIG. 9 is a schematic diagram showing the supply of process gases to a first plasma source and a second plasma source according to another embodiment of the present invention.

[0028] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0029] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0030] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0031] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention, FIG. 2 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention, FIG. 3 is a schematic top view showing a plasma source assembly (3000) according to one embodiment of the present invention, and FIG. 4 is a schematic cutaway perspective view showing the plasma source assembly (3000) of FIG. 2.

[0032] First, a substrate processing device according to one embodiment of the present invention may largely include a process chamber (1000), a chamber lid (1100a, 1100b), a substrate support (2000), a plasma source assembly (3000), a gas injection unit (4000), and a control unit (8000).

[0033] As illustrated in FIG. 1, a process chamber (1000) may have a reaction space (A) formed therein. The process chamber (1000) may be connected to a vacuum pump (1300) through an exhaust unit (1200) so as to form a vacuum atmosphere. Furthermore, the process chamber (1000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (A) and a gate (not shown) for opening and closing the entrance.

[0034] As shown in FIGS. 1 and 2, the chamber lid (1100a, 1100b) can be formed to cover the upper portion of the process chamber (1000).

[0035] Specifically, the chamber lid (1100a, 1100b) is formed to cover at least a portion of the process chamber (1000), and has a plurality of holes, slits, or openings, etc., penetrating at least a portion thereof so that process gas activated in the plasma source assembly (3000) coupled to the upper portion can flow to the lower portion of the chamber lid (1100a, 1100b).

[0036] For example, the chamber lid (1100a) may be coupled to the upper portion of the process chamber (1000) and may be coupled so that a gas injection plate (4100) is positioned between the chamber lid and the process chamber (1000).

[0037] At this time, as illustrated in FIG. 1, the chamber lid (1100a) may be coupled to a first plasma source (3100) and a second plasma source (3200) at the top, and may be formed in the shape of at least one of the plurality of holes, slits, or openings at positions corresponding to the first plasma source (3100) and the second plasma source (3200) so that the process gas activated by the first plasma source (3100) and the second plasma source (3200) can be sprayed downward.

[0038] Alternatively, as illustrated in FIG. 2, the chamber lid (1100b) may have a gas discharge plate (7000) coupled to the upper portion, and a first plasma source (3100) and a second plasma source (3200) may be coupled to the upper portion of the gas discharge plate (7000).

[0039] At this time, the chamber lid (1100b) may be formed with an opening so that the process gas activated from the first plasma source (3100) and the second plasma source (3200) coupled to the upper gas discharge plate (7000) is sprayed toward the gas injection plate (4000).

[0040] As illustrated in FIG. 1, the substrate support (2000) may be coupled to the process chamber (1000) to support at least one substrate (S) within the reaction space (A). For example, the substrate support (2000) may be installed in the process chamber (1000) to face the gas injection unit (4000). Furthermore, the substrate support (2000) may include a heater (not shown) for heating the substrate (S) therein. Since the substrate support (2000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0041] The shape of the upper plate of the substrate support member (2000) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft (1200) is connected to the substrate support member (2000), and the shaft (1200) may be connected to an external motor so as to be able to be raised and lowered. Optionally, a means for maintaining airtightness, such as a bellows pipe, may be connected between the shaft (1200) and the process chamber (1000).

[0042] In some embodiments, the substrate support (2000) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0043] As illustrated in FIG. 1, the gas injection unit (4000) may be coupled to the process chamber (1000) to inject process gas supplied from the outside of the process chamber (1000) into the reaction space (A). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (1000) so as to face the substrate support unit (2000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (A).

[0044] A gas injection unit (4000) may be formed with a gas injection plate (4100) for injecting process gas activated by a plasma source assembly (3000) onto a substrate support unit (2000).

[0045] Specifically, the gas injection plate (4100) may be formed at the lower portion of the plasma source assembly (3000) and may include a gas injection plate (4100) for injecting a process gas activated by the plasma source assembly (3000) onto the substrate support (2000). A plurality of injection holes may be formed downward in the gas injection plate (4100). Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the plasma source and the gas injection plate (4100).

[0046] The plasma source assembly (3000) is coupled to the process chamber (1000) above the substrate support (2000) to supply activated process gas to the reaction space (A), and may be coupled to, for example, a chamber lid (1100b) covering the upper portion of the process chamber (1000).

[0047] As illustrated in FIG. 1, the plasma source assembly (3000) may include a first plasma source (3100) coupled to a chamber lid (1100a) and having a first toroidal channel (3114) formed therein and having a first radius from the center of the chamber lid (1100a) to supply an activated process gas to a reaction space (A), a second plasma source (3200) having a second toroidal channel (3214) formed therein and having a second radius smaller than that of the first plasma source (3100), and an insulating member provided between the first plasma source (3100), the second plasma source (3200), and the chamber lid (1100a).

[0048] Alternatively, as illustrated in FIG. 2, the plasma source assembly (3000) may include a gas discharge plate (7000) coupled to a chamber lid (1100b), a first plasma source (3100) having a first toroidal channel (3114) formed therein to supply an activated process gas to a reaction space (A) having a first radius, a second plasma source (3200) having a second toroidal channel (3214) formed therein having a second radius smaller than that of the first plasma source (3100), and an insulating member provided between the first plasma source (3100), the second plasma source (3200), and the gas discharge plate (7000).

[0049] At this time, the insulating member may include first insulating members (3170a, 3170b, 3170c) and second insulating members (3270).

[0050] Specifically, the first plasma source (3100) coupled to the upper portion of the process chamber (1000) may be arranged to surround the second plasma source (3200). For example, the second plasma source (3200) may be coupled to the upper portion of the process chamber (1000) and arranged in a donut shape with the second radius at the center portion of the upper plate of the gas injection unit (4000), and the first plasma source (3100) may be arranged in a donut structure with the first radius surrounding the donut structure of the second plasma source (3200). This plasma source assembly (3000) enables the activated process gas to be injected throughout the entire central region and edge region of the gas injection unit (4000).

[0051] FIG. 5 is a perspective view showing a first plasma source (3100) according to one embodiment of the present invention, FIG. 6 is a perspective view showing a second plasma source (3200) according to one embodiment of the present invention, and FIG. 7 is a top view showing a gas discharge plate (7000) according to one embodiment of the present invention.

[0052] As illustrated in FIGS. 3 and 5, the first plasma source (3100) may include a first reaction body (3110), a plurality of first magnetic cores (3130a, 3130b, 3130c), a plurality of first windings (3150a, 3150b, 3150c), and a plurality of first insulating members (3170a, 3170b, 3170c).

[0053] The first reaction body (3110) may include a first toroidal channel (3114), a plurality of first body parts, and a plurality of first insulating parts (3116a, 3116b, 3116c).

[0054] The first reaction body (3110) may be arranged such that the plurality of first body parts form a first toroidal channel (3114) as a whole, with the plurality of first gas diffusion spaces (3114a, 3114b, 3114c).

[0055] As illustrated in FIG. 4, the first reaction body (3110) may be formed by combining a plurality of first body parts, and the plurality of first body parts may each have first gas diffusion spaces (3114a, 3114b, 3114c) formed therein.

[0056] Specifically, in the first reaction body (3110), the plurality of first body parts may be arranged such that the first gas diffusion spaces (3114a, 3114b, 3114c) form a first toroidal channel (3114) as a whole. More specifically, the plurality of first body parts may be formed to correspond to structures that are formed by carving out the overall shape of the first toroidal channel (3114) so ​​as to define the first toroidal channel (3114) as a whole. For example, when the first toroidal channel (3114) is formed as a whole in a donut shape, the plurality of first body parts may be formed to correspond to structures that are formed by carving out the donut shape into a plurality of pieces.

[0057] For example, as shown in FIG. 5, the first reaction body (3110) may be composed of three first body parts, and a fluid flow path (3114a) may be formed inside one of the plurality of first body parts, a fluid flow path (3114b) may be formed inside another one of the plurality of first body parts, and a fluid flow path (3114c) may be formed inside the remaining one of the plurality of first body parts.

[0058] That is, the first reaction body (3110) can be formed by a plurality of first body parts, and for example, the plurality of first body parts can be formed by combining a plurality of 1-1 body parts (3111a, 3111b, 3111c) and a plurality of 1-2 body parts (3112a, 3112b, 3112c), respectively.

[0059] The cross-sectional shape of the first gas diffusion spaces (3114a, 3114b, 3114c) may have various shapes such as a circle, an ellipse, a semicircle, or a polygon.

[0060] In some embodiments, the interior of the plurality of first body parts may be formed by coating an insulating material on a conductive material. For example, the plurality of first body parts may be formed by coating an insulating material, such as a metal oxide, a metal nitride, or a metal compound such as a nickel alloy, on a metal.

[0061] The first reaction body (3110) may be separated or formed as a single body and may be manufactured using a 3D printer.

[0062] The first reaction body (3110) may include a plurality of first-first body parts (3111a, 3111b, 3111c), a plurality of first-second body parts (3112a, 3112b, 3112c), a plurality of first gas inlets (3118a, 3118b, 3118c), and a plurality of first openings (3119a, 3119b, 3119c).

[0063] As illustrated in FIG. 5, the plurality of first-first body parts (3111a, 3111b, 3111c) can form at least a portion of the first toroidal channel (3114), and are tubular structures that form a flow path therein so as to form a portion of the first toroidal channel (3114).

[0064] A plurality of first-second body parts (3112a, 3112b, 3112c) are formed on the sides of the plurality of first-first body parts (3111a, 3111b, 3111c), and a plurality of first insulating parts (3116a, 3116b, 3116c) are coupled to the outside, and a tubular structure is formed inside to form another part of the first toroidal channel (3114).

[0065] A plurality of first-first body parts (3111a, 3111b, 3111c) may have a first length and a second width, and a plurality of first-second body parts (3112a, 3112b, 3112c) may have a second length and a second width. In this case, the first length may be greater than the second length, and the first width may be greater than the second width. That is, the length and width of the plurality of first-second body parts (3112a, 3112b, 3112c) are formed to be smaller than the length and width of the plurality of first-first body parts (3111a, 3111b, 3111c), so that the plurality of first magnetic cores (3130a, 3130b, 3130c) can be coupled to the outer peripheral surfaces of the plurality of first-second body parts (3112a, 3112b, 3112c).

[0066] In some embodiments, flanges (2126, 2127) may be coupled to the ends of the plurality of first-second body parts (3112a, 3112b, 3112c). For example, one side of a plurality of 1-1 body parts (3111a, 3111b, 3111c) may be connected to one side of the flanges (2127) of the plurality of 1-2 body parts (3112a, 3112b, 3112c), and first insulating parts (3116a, 3116b, 3116c) may be connected between the other side of the flanges (2126) of the plurality of 1-2 body parts (3112a, 3112b, 3112c) and the other side of the plurality of 1-1 body parts (3111a, 3111b, 3111c).

[0067] In the first reaction body (3110), the first gas diffusion spaces (3114a, 3114b, 3114c) may be in communication with the flow paths within the flanges (2126, 2127) and the first insulating portions (3116a, 3116b, 3116c) so that the first toroidal channel (3114) is formed entirely in the first reaction body (3110).

[0068] As illustrated in FIGS. 2 and 4, a plurality of first gas inlets (3118a, 3118b, 3118c) may be formed in at least a portion of a plurality of first-first body parts (3111a, 3111b, 3111c).

[0069] Specifically, the plurality of first gas inlets (3118a, 3118b, 3118c) may be formed by penetrating at least a portion of the plurality of 1-1 body parts (3111a, 3111b, 3111c) so that process gas supplied from the outside may flow into the plurality of first gas diffusion spaces (3114a, 3114b, 3114c). For example, the plurality of first gas inlets (3118a, 3118b, 3118c) may be formed on the upper portions of the plurality of 1-1 body parts (3111a, 3111b, 3111c).

[0070] The positions at which the plurality of first gas inlets (3118a, 3118b, 3118c) are formed are not limited, and may be formed on the side of the plurality of first-first body parts (3111a, 3111b, 3111c).

[0071] As illustrated in FIGS. 3 and 4, a plurality of first openings (3119a, 3119b, 3119c) are formed in at least a portion of a plurality of first-first body parts (3111a, 3111b, 3111c) and can discharge the activated process gas from the first reaction body (3110).

[0072] For example, a plurality of first openings (3119a, 3119b, 3119c) may be formed on the lower surfaces of the plurality of first-first body parts (3111a, 3111b, 3111c). The process gas introduced into the first toroidal channel (3114) through the plurality of first gas inlets (3118a, 3118b, 3118c) may be activated and discharged to the lower portion of the first plasma source (3100) through the plurality of first openings (3119a, 3119b, 3119c). For example, the plurality of first openings (3119a, 3119b, 3119c) may be formed in a slit shape.

[0073] For example, a plurality of first openings (3119a, 3119b, 3119c) may be formed on the lower surface of a plurality of first-first body parts (3111a, 3111b, 3111c) so that the activated process gas, i.e., radicals, can be supplied downward from the first plasma source (3100), as shown in FIG. 4.

[0074] As illustrated in FIGS. 4 and 5, a plurality of first insulating members (3170a, 3170b, 3170c) can be coupled to at least one surface of the first reaction body (3110). Specifically, the plurality of first insulating members (3170a, 3170b, 3170c) are formed in a shape capable of covering the plurality of first body parts, and openings corresponding to the plurality of first openings (3119a, 3119b, 3119c) are formed, so that the activated process gas can be discharged through the openings of the plurality of first insulating members (3170a, 3170b, 3170c).

[0075] Additionally, as illustrated in FIGS. 3 and 5, the first reaction body (3110) may include a plurality of first insulating portions (3116a, 3116b, 3116c) coupled between the plurality of first body portions.

[0076] The first insulating portions (3116a, 3116b, 3116c) may be coupled between the plurality of first body portions. The first insulating portions (3116a, 3116b, 3116c) may be interposed between the plurality of first body portions so that the first body portions are not directly electrically connected to each other but are spaced apart from each other.

[0077] The first insulating portions (3116a, 3116b, 3116c) may have a flow path formed therein so that the first gas diffusion spaces (3114a, 3114b, 3114c) within the plurality of first body portions are connected to each other. The first insulating portions (3116a, 3116b, 3116c) may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0078] As illustrated in FIGS. 3 and 5, a plurality of first magnetic cores (3130a, 3130b, 3130c) may be spaced apart from each other along the first toroidal channel (3114) while each surrounding the first reaction body (3110).

[0079] For example, a plurality of first magnetic cores (3130a, 3130b, 3130c) may be respectively disposed on the plurality of first body parts.

[0080] Each of the plurality of first magnetic cores (3130a, 3130b, 3130c) may be formed as a single closed structure or may have a structure in which a plurality of divided parts are combined, and the plurality of first magnetic cores (3130a, 3130b, 3130c) may include a magnetic material, for example, a ferrite material.

[0081] As illustrated in FIG. 5, a plurality of first windings (3150a, 3150b, 3150c) may be arranged to wind a plurality of first magnetic cores (3130a, 3130b, 3130c). For example, a winding (3150a) may be arranged to wind a magnetic core (3130a), a winding (3150b) may be arranged to wind a magnetic core (3130b), and a winding (3150c) may be arranged to wind a magnetic core (3130c).

[0082] The plurality of first windings (3150a, 3150b, 3150c) can receive power from the plasma power source (6000) and induce a magnetic force within the plurality of first magnetic cores (3130a, 3130b, 3130c). For example, when the plurality of first windings (3150a, 3150b, 3150c) are wound in the width direction of the plurality of first magnetic cores (3130a, 3130b, 3130c), when power is applied to the plurality of first windings (3150a, 3150b, 3150c), a magnetic force can be induced within the plurality of first magnetic cores (3130a, 3130b, 3130c) along the circumferential direction thereof.

[0083] As illustrated in FIGS. 3 and 6, the second plasma source (3300) may include a second reaction body (3210), a second magnetic core (3230), a second winding (3250), and a second insulating member (3270).

[0084] The second reaction body (3210) may include a second toroidal channel (3214), a second body portion, and a second insulation portion (3216).

[0085] The second reaction body (3210) may be arranged such that the second body portion forms a second toroidal channel (3214) as a whole in the second gas diffusion space.

[0086] As illustrated in FIG. 6, the second reaction body (3210) may be formed as a second body portion, and the second body portion may be formed inside the first reaction body (3110), and a second gas diffusion space may be formed inside.

[0087] Specifically, in the second reaction body (3210), the second body portion may be arranged so that the second gas diffusion space forms a second toroidal channel (3214) as a whole. More specifically, the second body portion may be formed to correspond to the overall shape of the second toroidal channel (3214) so ​​as to define the second toroidal channel (3214) as a whole, or may be formed to correspond to structures that are carved out of the overall shape of the second toroidal channel (3214), respectively.

[0088] For example, if the second toroidal channel (3214) is formed in an overall donut shape, the second body portion may be formed in such a donut shape or may be formed to correspond to structures cut into multiple pieces.

[0089] For example, as illustrated in FIGS. 3 and 6, the second reaction body (3210) is composed of two second body parts, and a fluid path is formed inside the second body parts, so that a second toroidal channel (3214) can be formed.

[0090] That is, the second reaction body (3210) can be formed by the second body part, and for example, the second body part can be formed by combining the 2-1 body part (3211) and the 2-2 body part (3212).

[0091] The cross-sectional shape of the above second gas diffusion space may have various shapes such as a circle, an ellipse, a semicircle, or a polygon.

[0092] In some embodiments, the interior of the second body portion may be formed by coating an insulating material on a conductive material, like the plurality of first body portions, for example, by coating an insulating material, such as a metal oxide, a metal nitride, a metal compound such as a nickel alloy, on a metal.

[0093] The second reaction body (3210) may be separated or formed as a single body and may be manufactured using a 3D printer.

[0094] The second reaction body (3210) may include a second-first body portion (3211), a second-second body portion (3212), a second gas inlet (3218), and a second opening (3219).

[0095] As illustrated in FIG. 6, the 2-1 body portion (3211) is a tubular structure that can form at least a portion of the second toroidal channel (3214) and forms a flow path therein so as to form a portion of the second toroidal channel (3214).

[0096] The 2-2 body part (3212) is a tubular structure formed to be connected to the 2-1 body part (3211), has a second insulating part (3216) coupled to the outside, and forms a flow path inside so as to form another part of the 2-2 toroidal channel (3214).

[0097] The 2-1 body part (3211) may have a third length and a third width, and the 2-2 body part (3212) may have a fourth length and a fourth width. In this case, the third length may be greater than the fourth length, and the third width may be greater than the fourth width. That is, the length and width of the 2-2 body part (3212) may be formed to be smaller than the length and width of the 2-1 body part (3211), so that the second magnetic core (3230) may be coupled to the outer surface of the 2-2 body part (3212).

[0098] In some embodiments, flanges may be coupled to the ends of the second-second body portion (3212).

[0099] In the second reaction body (3210), the second gas diffusion space may be in communication with the flanges and the flow path within the second insulation (3216) so that the second toroidal channel (3214) is formed throughout the second reaction body (3210).

[0100] As illustrated in FIGS. 3 and 6, the second gas inlet (3218) may be formed in at least a portion of the second-first body portion (3211).

[0101] Specifically, the second gas inlet (3218) may be formed by penetrating at least a portion of the 2-1 body portion (3211) so that a process gas supplied from the outside may flow into the second gas diffusion space. For example, the second gas inlet (3218) may be formed at the upper portion of the 2-1 body portion (3211).

[0102] The location where the second gas inlet (3218) is formed is not limited, and may be formed on the side of the 2-1 body part (3211).

[0103] As shown in FIGS. 4 and 6, the second opening (3219) is formed in at least a portion of the second-first body portion (3211) and can discharge the activated process gas from the second reaction body (3210).

[0104] For example, a second opening (3219) may be formed on the lower surface of the second-first body portion (3211). The process gas introduced into the second toroidal channel (3214) through the second gas inlet (3218) may be activated and discharged to the lower portion of the second plasma source (3200) through the second opening (3219). For example, the second opening (3219) may be formed in a slit shape.

[0105] For example, the second opening (3219) may be formed on the lower surface of the second-first body portion (3211) so that the activated process gas, i.e., radicals, can be supplied downward from the second plasma source (3200), as shown in FIG. 5.

[0106] As illustrated in FIGS. 4 and 6, the second insulating member (3270) can be coupled to at least one surface of the second reaction body (3210). Specifically, the second insulating member (3270) is formed in a shape capable of covering the second body portion, and an opening corresponding to the second opening (3219) is formed so that the activated process gas can be discharged through the opening of the second insulating member (3270).

[0107] Additionally, as illustrated in FIGS. 2 and 5, the second reaction body (3210) may include a second insulating portion (3216) coupled to the second body portion.

[0108] A second insulating member (3216) may be interposed between the second body parts so that the ends of the second body parts are not directly electrically connected to each other but are spaced apart from each other.

[0109] The second insulating portion (3216) may have a flow path formed therein so that the second gas diffusion spaces within the second body portion are connected to each other. The second insulating portion (3216) may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0110] As illustrated in FIGS. 2 and 5, the second magnetic core (3230) may be disposed in a portion of the second toroidal channel (3214) while surrounding the second reaction body (3210).

[0111] For example, the second magnetic core 2 (3230) can be placed on the second body part.

[0112] The second magnetic core (3230) may be formed as a single closed structure or may have a structure in which a plurality of segments are combined, and the second magnetic core (3230) may include a magnetic material, for example, a ferrite material.

[0113] As illustrated in FIG. 6, the second winding (3250) can be arranged to wind the second magnetic core (3230).

[0114] The second winding (3250), like the plurality of first windings (3150a, 3150b, 3150c), can receive power from the plasma power source (6000) and induce a magnetic force within the second magnetic core (3230). For example, when the second winding (3250) is wound in the width direction of the second magnetic core (3230), when power is applied to the second winding (3250), a magnetic force can be induced within the second magnetic core (3230) along its circumferential direction.

[0115] In the plasma source assembly (3000) according to the present invention, the number of the plurality of first body parts of the first plasma source (3100) is exemplarily shown, and may be selected as two or more. Furthermore, depending on the number of the plurality of first body parts, the number of the plurality of first magnetic cores (3130a, 3130b, 3130c), the plurality of first windings (3150a, 3150b, 3150c), and the plurality of first insulating parts (3116a, 3116b, 3116c) may vary.

[0116] According to the first plasma source (3100), when power is applied from the plasma power source (6000) to the plurality of first windings (3150a, 3150b, 3150c), a magnetic force is induced in the plurality of first magnetic cores (3130a, 3130b, 3130c), and a current can be induced in the first toroidal channel (3114) penetrating the inside of the plurality of first magnetic cores (3130a, 3130b, 3130c) by this induced magnetic force. The gas can be activated in the first toroidal channel (3114) by this current, thereby forming a plasma atmosphere.

[0117] In the first plasma source (3100), a magnetic force is induced from a current flowing in a plurality of first windings (3150a, 3150b, 3150c) to a plurality of first magnetic cores (3130a, 3130b, 3130c), and a structure in which a current is induced in a first toroidal channel (3114) by this induced magnetic force can correspond to the principle of a transformer, and the second plasma source (3200) can be driven in the same manner.

[0118] In this respect, the plasma source of the present invention may be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0119] In some embodiments, the plurality of first windings (3150a, 3150b, 3150c) may function as primary coils, and the first toroidal channel (3114) defined by the plurality of first body parts may function as secondary coils. In this respect, the plurality of first windings (3150a, 3150b, 3150c) may be referred to as primary coils or primary windings, and the current flowing in the plurality of first windings (3150a, 3150b, 3150c) may be referred to as primary current. Furthermore, the current induced in the first toroidal channel (3114) may also be referred to as secondary current.

[0120] When a secondary current is induced in the first toroidal channel (3114), the voltage can be applied mostly to both ends of the first insulators (3116a, 3116b, 3116c). Therefore, ignition of the plasma in the first toroidal channel (3114) can be initiated within the first insulators (3116a, 3116b, 3116c), and the second plasma source (3200) can also be ignited in the same manner.

[0121] In a substrate processing device according to one embodiment of the present invention, a supply surface of a first plasma source (3100) through which the process gas is supplied to a gas injection unit (4000) and a supply surface of a second plasma source (3200) can be formed on the same plane.

[0122] As illustrated in FIGS. 1 and 2, in a plasma source assembly (3000) coupled to the upper portion of a process chamber (1000), a plurality of first openings (3119a, 3119b, 3119c) of a first plasma source (3100) are formed on a lower surface of the first plasma source (3100), and a second opening (3219) of a second plasma source (300) is formed on a lower surface of the second plasma source (300), so that the process gas can be supplied downwardly of the plasma source.

[0123] Specifically, a gas discharge plate (7000) can be coupled to correspond to a plurality of first openings (3119a, 3119b, 3119c) and second openings (3219) at the lower portions of the first plasma source (3100) and the second plasma source (300).

[0124] As shown in FIGS. 2 and 4, the gas discharge plate (7000) can be coupled to the first plasma source (3100) and the second plasma source (3200).

[0125] The gas discharge plate (7000) may have a plurality of discharge ports formed at positions corresponding to the first openings (3119a, 3119b, 3119c) for discharging the process gas activated in the first plasma source (3100) from the first plasma source (3100) and the second openings (3219) for discharging the process gas activated in the second plasma source (3200) from the second plasma source (3200).

[0126] The gas discharge plate (7000) may be formed with a plurality of holes for discharging the activated process gas from the first toroidal channel (3114) and the second toroidal channel (3214).

[0127] The gas discharge plate (7000) can discharge the activated process gas, i.e., radicals, downward through the plurality of holes.

[0128] The gas exhaust plate (7000) may be formed with a plurality of exhaust ports, and the plurality of exhaust ports may include a plurality of first gas exhaust ports (7100) and at least one second gas exhaust port (7200).

[0129] A plurality of first gas outlets (7100) may be formed through the gas outlet plate (7000) and may be formed so that the process gas activated in the first plasma source (3100) can be supplied to the lower portions of the plurality of first body parts from the first gas diffusion spaces (3114a, 3114b, 3114c).

[0130] At least one second gas outlet (7200) may be formed through the gas outlet plate (7000) and may be formed so that a process gas activated from the second plasma source (3200) can be supplied from the second gas diffusion space to the lower portion of the second body portion.

[0131] At this time, a plurality of first gas outlets (7100) and at least one second gas outlet (7200) can be formed at the same height.

[0132] The plurality of first gas outlets (7100a, 7100b, 7100c) and at least one second gas outlet (7200) may be formed in the shape of a cylinder, a cone, a pyramid, or the like. That is, the plurality of first body parts and the second body part may be formed in the same size from the inside to the outside, or the holes may be formed so that they become progressively larger.

[0133] Accordingly, the radicals are discharged to the outside of the plurality of first body parts and the second body part, and particles can be prevented from flowing into the first gas diffusion spaces (3114a, 3114b, 3114c) and the second gas diffusion space on the inside of the plurality of first body parts and the second body part, and the amount of radicals discharged can be controlled according to the size and shape of the plurality of first gas outlets (7100a, 7100b, 7100c) and at least one second gas outlet (7200).

[0134] The control unit (8000) can control at least one plasma power supply unit (6000) to control the formation of plasma in the first plasma source (3100) and the second plasma source (3200). Alternatively, the control unit (8000) can control a flow rate controller and a plurality of control valves to control the supply of the process gas flowing into the first plasma source (3100) and the second plasma source (3200) from the process gas supply unit (5000) formed outside the process chamber (1000). A detailed description of the control unit (8000) that controls the plasma power supply unit (6000) and the plurality of control valves will be described later.

[0135] FIG. 8 is a schematic diagram showing the power transmission of a first plasma source (3100) and a second plasma source (3200) according to one embodiment of the present invention, and FIG. 9 is a schematic diagram showing the supply of process gas of a first plasma source (3100) and a second plasma source (3200) according to another embodiment of the present invention.

[0136] A substrate processing device according to one embodiment of the present invention may include a plasma power supply unit (6000) and an ignition unit.

[0137] As illustrated in FIG. 8, the plasma power supply (6000) may include a power supply device and supply RF power to a plurality of first windings (3150a, 3150b, 3150c) and second windings (3250) via a resonant circuit (not shown). For example, the plasma power supply (6000) may include a switching mode power supply (SMPS).

[0138] The plasma power supply (6000) may include a first power supply (6100) and a second power supply (6200). For example, the first power supply (6100) may supply power to a plurality of first windings (3150a, 3150b, 3150c), and the second power supply (6200) may supply power to the second winding (3250).

[0139] The ignition unit may include a plurality of flanges and a plurality of switches coupled to the plurality of first body parts on both sides of the first insulating parts (3116a, 3116b, 3116c).

[0140] In a substrate processing device according to one embodiment of the present invention, a process gas can be supplied from a process gas supply unit (5000) formed outside a process chamber (1000) to a first plasma source (3100) and a second plasma source (3200).

[0141] For example, as illustrated in FIGS. 1 and 2, the same process gas can be supplied to the first plasma source (3100) through the first flow controller (5110) and to the second plasma source (3200) through the second flow controller (5210) in a single formed process gas supply unit (5000).

[0142] The process gas supply unit (5000) may be individually formed to include each gas so as to be able to supply the source gas, the reaction gas, and the inert gas, respectively. At this time, in the process gas supply unit (5000), when the plasma source is ignited, the process gas may be supplied from a gas supply unit containing an inert gas such as Ar, He, H2, N2, etc.

[0143] In addition, after ignition, while maintaining plasma in the process gas supply unit (5000), the source gas (or reaction gas) and the inert gas may be supplied singly or simultaneously from each gas supply unit.

[0144] A process gas supply unit (5000) of a substrate processing device according to another embodiment of the present invention is composed of a first process gas supply unit (5100) and a second process gas supply unit (5200), which are respectively connected to a first plasma source (3100) and a second plasma source (3200) so that different gases can be supplied.

[0145] For example, as illustrated in FIG. 9, a first process gas may be supplied from a first process gas supply unit (5100) to a first plasma source (3100), and a second process gas different from the first process gas may be supplied from a second process gas supply unit (5200) to a second plasma source (3200).

[0146] At this time, the first process gas supply unit (5100) and the second process gas supply unit (5200) are connected to the first plasma source (3100) and the second plasma source (3200), respectively, so that the first process gas can be supplied to the first plasma source (3100) and the second process gas can be supplied to the second plasma source (3200).

[0147] In addition, the first process gas supply unit (5100) and the second process gas supply unit (5200) may be connected to the first plasma source (3100) and the second plasma source (3200) through the same pipe, and a first flow controller (5110) and a second flow controller (5210) may be installed. Accordingly, the first process gas may be selectively supplied to the first plasma source (3100) and the second plasma source (3200), and the second process gas may be selectively supplied to the first plasma source (3100) and the second plasma source (3200).

[0148] A substrate processing device according to one embodiment of the present invention may include a flow controller and a plurality of control valves that control the supply amount of process gas supplied from a process gas supply unit (5000) formed outside a process chamber.

[0149] Specifically, as illustrated in FIGS. 1, 2 and 9, a plurality of first gas inlets (3118a, 3118b, 3118c) and a second gas inlet (318) of the first plasma source (3100) and the second plasma source (3200) are each connected to a pipe for supplying the process gas from the process gas supply unit (5000), and a valve for controlling the flow of the gas may be formed in each pipe.

[0150] The above plurality of control valves may include a first flow rate controller (5110) formed in a pipe connected to a process gas supply unit (5000) and a first plasma source (3100) to control the supply of process gas flowing into the first plasma source (3100).

[0151] For example, the first flow controller (5110) can control the supply amount of the process gas to the plurality of first gas inlets (3118a, 3118b, 3118c) connected to the first toroidal channel (3114). More specifically, the process gas supplied to the first plasma source (3100) from the process gas supply unit (5000) is controlled as the main by the first flow controller (5110), and the process gas supplied to the plurality of first body parts can be controlled by the first-first control valve (5111a), the first-second control valve (5111b), and the first-third control valve (not shown), which are respectively connected to the plurality of first gas inlets (3118a, 3118b, 3118c) formed in the first reaction body (3110).

[0152] The above plurality of control valves may include a second flow regulator (5210) formed in a pipe connected to the process gas supply unit (5000) and the second plasma source (3200) to control the supply of process gas flowing into the second plasma source (3200). For example, the second flow regulator (5210) may control the supply amount of process gas to the second gas inlet (3218) connected to the second toroidal channel (3214).

[0153] The above plurality of control valves may be flow control valves that control the amount of process gas supplied, or may be mass flow controllers that automatically control the flow rate of the gas.

[0154] As illustrated in FIGS. 1 and 2, the control unit (8000) can control at least one plasma power source (6000) to control the formation of plasma within the first plasma source (3100) and the second plasma source (3200).

[0155] Specifically, the control unit (8000) can control the RF power supplied to the first plasma source (3100) and the second plasma source (3200) so that the process gas is activated faster in the second plasma source (3200) than in the first plasma source (3100).

[0156] For example, the RF power applied to the first plasma source (3100) from the first power supply (6100) can be controlled to be greater than the RF power applied to the second plasma source (3200) from the second power supply (6200).

[0157] Specifically, the control unit (6000) can increase the plasma density within the first toroidal channel (3114) by controlling the RF power supplied to the first plasma source (3100) to be increased more than the RF power supplied to the second plasma source (3200).

[0158] In addition, when the RF power is increased, the RF current increases, and the primary current flowing in the coil increases, so that the size or density of the magnetic field formed in the plurality of first magnetic cores (3130a, 3130b, 3130c) can be relatively increased compared to the second plasma source (3100), and when the voltage applied to the winding is increased by increasing the RF power, the plasma density is relatively increased compared to the plasma density of the second plasma source (3100), so that the activation rate of the process gas can be increased.

[0159] Accordingly, the process gas activated in the first plasma source (3100) formed in the edge region of the substrate (S) can be formed more quickly than the process gas activated in the second plasma source (3200) formed in the center region.

[0160] The control unit (8000) can control the plurality of control valves so as to control the supply of process gas flowing into the first plasma source (3100) and the second plasma source (3200) from the process gas supply unit (5000) formed outside the process chamber (1000).

[0161] Specifically, the control unit (8000) can control the first flow rate controller (5110) and the second flow rate controller (5210) so that a larger amount of process gas is supplied through the first flow rate controller (5110) than the process gas supplied through the second flow rate controller (5210).

[0162] For example, the control unit (8000) can control the opening / closing rate, flow rate, pressure, etc. of the first flow regulator (5110) so that the amount of process gas supplied to the first toroidal channel (3114) is greater than the amount of process gas supplied to the second toroidal channel (3214).

[0163] Thus, a larger amount of process gas can be activated in the second plasma source (3200) than in the first plasma source (3100), and accordingly, a larger amount of radicals can be supplied in the edge region of the substrate (S) where the first plasma source (3100) is formed than in the center region where the second plasma source (3200) is formed.

[0164] At this time, the 1-1 control valve (5111a), the 1-2 control valve (5111b), and the 1-3 control valve (not shown) connected to the plurality of first gas inlets (3118a, 3118b, 3118c) formed in the first reaction body (3110) are individually controlled, thereby individually controlling the supply amount of process gas inside the plurality of first body parts.

[0165] The substrate processing device according to the present invention may be coupled to the upper part of a process chamber (1000) so that a first plasma source (3100) is coupled to the upper part of a substrate support on which a plurality of substrates (S) are mounted and rotated, and radicals are supplied toward at least one substrate (S). At this time, the first plasma source (3100) may be formed on the upper part of a substrate (S) among the plurality of substrates (S) that is to be deposited or requires a reaction by radicals, and may be formed on the upper part of two or more substrates (S) among the plurality of substrates (S). For example, the first plasma source (3100) may be formed above a reaction gas supply unit, and the radicals may be discharged to the substrate (S) passing through the lower part of the first plasma source (3100).

[0166] Additionally, a first plasma source (3100) and a second plasma source (3200) may be formed on top of one of the plurality of substrates (S).

[0167] The substrate processing device described above can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0168] According to the above substrate processing device, the amount of gas supplied to the plasma source or the plasma power supplied to each area can be controlled to control the amount of activated radicals supplied according to the area of ​​the substrate, thereby supplying radicals uniformly to the entire area of ​​the substrate, or controlling the amount of radicals supplied to each area to control the thickness of a thin film deposited on the substrate.

[0169] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A process chamber with a reaction space formed inside; A chamber lid covering the upper portion of the process chamber; A substrate support positioned within the process chamber to support at least one substrate; A plasma source assembly including a first plasma source coupled to the chamber lid to supply an activated process gas to the reaction space and having a first toroidal channel formed therein, a second plasma source having a second toroidal channel formed therein having a second radius smaller than that of the first plasma source, and an insulating member provided between the first plasma source, the second plasma source, and the chamber lid; A gas injection unit formed at the lower portion of the plasma source assembly and facing the substrate support, and having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support; and A control unit for controlling the operation of a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source and a flow rate controller for controlling the supply amount of process gas supplied from outside the process chamber; Including, A substrate processing device, wherein the first plasma source includes a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, wherein the first opening and the second opening are formed at the same height.

2. A process chamber with a reaction space formed inside; A chamber lid covering the upper portion of the process chamber; A substrate support positioned within the process chamber to support at least one substrate; A plasma source assembly including a gas discharge plate coupled to the chamber lid, a first plasma source coupled to the gas discharge plate to supply an activated process gas to the reaction space and having a first toroidal channel formed therein, a second plasma source having a second toroidal channel formed therein, having a second radius smaller than that of the first plasma source, and an insulating member provided between the first plasma source, the second plasma source, and the gas discharge plate; and A gas injection unit formed at the lower portion of the plasma source assembly and facing the substrate support, and having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support; and A control unit for controlling the operation of a plasma power supply unit for supplying plasma power to the first plasma source and the second plasma source and a flow rate controller for controlling the supply amount of process gas supplied from outside the process chamber; Including, A substrate processing device, wherein the first plasma source includes a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, wherein the first opening and the second opening are formed at the same height.

3. In paragraph 1 or 2, The above first plasma source is, A first reaction body comprising a plurality of first body parts each having a plurality of first gas diffusion spaces formed therein, and a plurality of first insulating parts coupled between the plurality of first body parts, wherein the plurality of first body parts are arranged such that the plurality of first gas diffusion spaces collectively form the first toroidal channel; A plurality of first magnetic cores spaced apart from each other along the first toroidal channel, each surrounding the first reaction body; and A plurality of first windings arranged to wind the plurality of first magnetic cores and receiving power from the plasma power source to induce a magnetic force in the plurality of first magnetic cores; Including, The above insulating material is, A plurality of first insulating members joined to at least one surface of the first reaction body; A substrate processing device comprising:

4. In paragraph 3, The above first reaction body is, A plurality of first-first body parts forming at least a portion of the first toroidal channel; As another part of the first toroidal channel, a plurality of first-second body parts formed on the side of the plurality of first-first body parts and having the plurality of first insulating parts coupled to the outside; A plurality of first gas inlets formed by penetrating at least a portion of the plurality of first-first body parts so that process gas supplied from the outside flows into the plurality of first gas diffusion spaces; and A plurality of first openings formed in at least a portion of the plurality of first-first body parts and discharging the activated process gas from the first reaction body; A substrate processing device comprising:

5. In paragraph 1 or 2, The second plasma source is, A second reaction body comprising a second body part formed inside the first reaction body and having a second gas diffusion space formed therein, and a second insulating part coupled to the second body part, wherein the second body part is arranged such that the second gas diffusion space forms the second toroidal channel as a whole; A second magnetic core disposed in a portion of the second toroidal channel, surrounding the second reaction body; A second winding arranged to wind the second magnetic core and receiving power from the plasma power source to induce a magnetic force within the second magnetic core; and A second insulating member coupled to at least one surface of the second reaction body; A substrate processing device comprising:

6. In paragraph 5, The second reaction body is, A second body part forming a part of the second toroidal channel; A 2-2 body part formed to be connected to the 2-1 body part through another part of the 2nd toroidal channel, and having the 2nd insulating part coupled to the outside; At least one second gas inlet formed by penetrating at least a portion of the second-1 body part so that the process gas can flow into the second gas diffusion space; and At least one second opening formed in at least a portion of the second-first body portion and discharging the activated process gas from the second reaction body; A substrate processing device comprising:

7. In paragraph 2, The above gas discharge plate, A plurality of first gas discharge ports formed at positions corresponding to the first opening to supply process gas activated from the first plasma source to the gas injection portion; and At least one second gas outlet formed at a position corresponding to the second opening to supply a process gas activated from the second plasma source toward the gas injection portion; A substrate processing device comprising:

8. In paragraph 7, A substrate processing device, characterized in that each of the first gas exhaust port and the second gas exhaust port is formed in the form of a plurality of holes.

9. In paragraph 1 or 2, The above control unit, A substrate processing device that controls the operation of a first flow controller that regulates the supply amount of the process gas flowing into the first plasma source, and a second flow controller that regulates the supply amount of the process gas flowing into the second plasma source.

10. In paragraph 9, The above control unit, A substrate processing apparatus, wherein the operations of the first flow controller and the second flow controller are controlled so that a greater amount of the process gas is activated in the first plasma source than in the second plasma source.

11. In paragraph 1 or 2, The above plasma power supply unit, A first power supply unit for applying RF power to the first plasma source; and A second power supply unit for applying RF power to the second plasma source; A substrate processing device comprising:

12. In paragraph 11, The above control unit, A substrate processing device that controls power applied to the second power source to be greater than power applied to the second power source so that a greater amount of the process gas is activated from the first plasma source than from the second plasma source.

Images