Silicon wafer defect measurement method and apparatus

Abstract

A silicon wafer defect measurement method and apparatus, relating to the technical field of semiconductors. The method comprises: bombarding a silicon wafer by means of an electron beam in a vacuum environment to obtain at least two reference marks; using a particle counter to measure the silicon wafer to obtain first reference coordinates of the reference marks; and on the basis of the first reference coordinates, using an atomic force microscope to measure the silicon wafer to obtain feature information of a defect.

Description

Silicon wafer defect measurement method and device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application No. 202311092703.7 filed in China on August 29, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of semiconductor technology, and in particular to a method and device for measuring defects in silicon wafers. Background Art

[0004] Silicon wafers used in advanced manufacturing processes have increasingly stringent requirements for surface particle size, necessitating precise measurement of surface defects to infer defect formation mechanisms, clarify the process flow of defect generation, and provide guidance and reasonable suggestions for process improvement. Among current silicon wafer surface measurement tools, particle counters can measure the location and equivalent size of defects up to 12.5nm on the wafer. Smaller defects (less than 12.5nm) require an atomic force microscope (AFM) for measurement. When measuring small defects, the AFM needs to measure the coordinate position of the defect based on the particle counter and measure the defect information on the wafer. However, there is an inevitable offset during the transfer of the wafer from the particle counter to the AFM, resulting in a deviation between the position measured by the AFM and the actual position of the defect on the wafer, thus affecting the defect measurement accuracy.

[0005] Summary of the Invention

[0006] The present disclosure provides a silicon wafer defect measurement method and device, which can solve the problem of low measurement accuracy of small defects on silicon wafers in related technologies.

[0007] In order to solve the above technical problems, the present disclosure adopts the following technical solutions:

[0008] The present disclosure provides a method for measuring silicon wafer defects, including:

[0009] bombarding the silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks;

[0010] Measuring the reference mark using a particle counter to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter;

[0011] Measuring the silicon wafer using an atomic force microscope according to the first reference coordinates to obtain characteristic information of the defect;

[0012] The characteristic information of the defect at least includes the size of the defect.

[0013] Furthermore, bombarding the silicon wafer with an electron beam in a vacuum environment includes:

[0014] Bombarding any point on the silicon wafer with an electron beam to obtain a first marking point;

[0015] Electron bombardment is performed at preset intervals along the horizontal or vertical direction according to the first marking points to obtain the reference mark including a plurality of the first marking points.

[0016] Furthermore, measuring the silicon wafer using an atomic force microscope according to the first reference coordinate to obtain characteristic information of the defect includes:

[0017] Measuring the reference mark on the silicon wafer using an atomic force microscope optical system to obtain a second reference coordinate of the reference mark in a second coordinate system of the atomic force microscope;

[0018] Comparing the first reference coordinate with the second reference coordinate to obtain a coordinate error value;

[0019] Correcting the second coordinate system according to the coordinate error value;

[0020] The defect is measured using an atomic force microscope according to the corrected second coordinate system to obtain characteristic information of the defect.

[0021] Furthermore, the acceleration voltage of the electron beam has a voltage value ranging from 5 kV to 25 kV;

[0022] The bombardment time of the silicon wafer by the electron beam is in the range of 3 minutes to 10 minutes.

[0023] Furthermore, the length of the reference mark ranges from 100 nm to 300 nm, the width of the reference mark ranges from 100 nm to 300 nm, and the depth of the reference mark is greater than 20 nm.

[0024] Furthermore, the number of the first marking points ranges from 3 to 10.

[0025] Furthermore, the preset distance is less than or equal to the diameter of the electron beam.

[0026] Furthermore, the diameter of the electron beam ranges from 0.1 μm to 5 μm.

[0027] The present disclosure also provides a silicon wafer defect measurement device, comprising:

[0028] a bombardment module, configured to bombard the silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks;

[0029] a first measuring module, configured to measure the reference mark using a particle counter to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter;

[0030] a second measurement module, configured to measure the silicon wafer using an atomic force microscope according to the first reference coordinates to obtain characteristic information of the defect;

[0031] The characteristic information of the defect at least includes the size of the defect.

[0032] The beneficial effects of the present disclosure are:

[0033] The silicon wafer defect measurement method disclosed in the present invention bombards a silicon wafer with an electron beam to form a reference mark on the wafer. The reference mark is measured using a particle counter to obtain a first reference coordinate of the reference mark in the particle counter's first coordinate system. When the silicon wafer is measured using an atomic force microscope, the reference mark can be used to correct for deviations caused by transferring the silicon wafer from the particle counter to the atomic force microscope, thereby determining the exact location of the defect and detecting its characteristic information. This method solves the problem of low measurement accuracy for smaller defects on silicon wafers in related technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic diagram showing the steps of a method for measuring silicon wafer defects according to an embodiment of the present disclosure;

[0035] FIG2 is a schematic diagram showing the structure of reference marks in an embodiment of the present disclosure;

[0036] FIG3 is a schematic structural diagram of a silicon wafer defect measurement device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0037] To make the technical problems, technical solutions, and advantages to be solved by the present disclosure more clear, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided only to help fully understand the embodiments of the present disclosure. Therefore, it should be clear to those skilled in the art that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. In addition, for the sake of clarity and brevity, descriptions of known functions and configurations have been omitted.

[0038] It should be understood that references throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic associated with the embodiment is included in at least one embodiment of the present disclosure. Therefore, the appearances of "in one embodiment" or "in an embodiment" throughout this specification do not necessarily refer to the same embodiment. Furthermore, these particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0039] A particle counter can measure the coordinates of defects on a silicon wafer, and can also measure larger defects on the wafer. An atomic force microscope can measure smaller defects, but this requires first measuring the defects on the wafer using a particle counter. The coordinates of the defects measured by the particle counter are then entered into the atomic force microscope, and the atomic force microscope then moves to the corresponding coordinates for measurement.

[0040] Currently, the measurement of small defects on silicon wafers requires the use of an atomic force microscope. Typically, the transfer process of the silicon wafer from the particle counter to the atomic force microscope causes the position of the silicon wafer to change. Although the deviation can be minimized during the transfer operation, it is difficult to avoid. At the microscopic scale, the coordinate deviation of the defect can be as high as hundreds of microns, while the measurement range of the atomic force microscope (taking into account the acceptability of the measurement time) is limited to tens of microns at most. Therefore, at least three defects are often required before the atomic force microscope measurement, so that the optical system can be calibrated to eliminate this coordinate deviation.

[0041] Optical systems can measure large defects, but as defect size decreases, they become incapable of accurate measurement. For example, when a defect is less than 70nm in diameter and 10nm in height, the optical system will not function properly. Atomic force microscopy will be completely unable to measure defects at the 12.5nm level.

[0042] Therefore, it is necessary to artificially create large-sized marking points on the surface of the silicon wafer and complete the marking before the particle counter measurement. After the particle counter measurement, the defect coordinates of the silicon wafer surface (including the artificially created marking points) are obtained. In the atomic force microscope measurement, the defect coordinates of the marking points are used to find the marking points in this area, confirm the true coordinates of the defect, and complete the measurement of the defect after adjusting the coordinate deviation.

[0043] The present disclosure addresses the problem of low measurement accuracy of small defects on silicon wafers in related technologies, and provides a method and device for measuring defects on silicon wafers.

[0044] As shown in FIG1 , an embodiment of the present disclosure provides a method for measuring silicon wafer defects, comprising the following steps:

[0045] For a silicon wafer with Localized Light Scatter (LLS) > 70nm = 0 and LLS > 12.5nm > 0, there are no particles with an equivalent diameter on its surface. They are not visible under the AFM optical system, and the coordinate system cannot be corrected. It is impossible to perform morphological measurement on the number of particles with LLS between 12.5 and 70 on it, and it is impossible to determine the main type of defects and speculate on the source of the defects. Among them, LLS characterizes the surface light point defects of the wafer. After the particle counter equipment irradiates the laser on the wafer surface, it is manifested by its scattering degree. For example, the particles or pits on the wafer surface are relative to the light scattering intensity of the wafer surface. Local light scatterers of sufficient size appear as light spots under high-intensity light irradiation, and these light spots can be visually observed.

[0046] Step 101: bombarding a defect-free position of a silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks;

[0047] Step 102 : Use a particle counter to measure the reference mark to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter; the first coordinate system is the reference coordinate system when the particle counter measures the silicon wafer.

[0048] In step 103, an atomic force microscope is used to measure the silicon wafer according to the first reference coordinates, and the morphology of the LLS particles between 12.5 and 70 nm is mainly linear, with a height between 1 nm and 2 nm and an equivalent size concentrated between 12.5 and 50 nm. Therefore, the defect type is JUT. Based on the process characteristics, it is inferred that the defect is caused by the unevenness of the grinding slurry.

[0049] Optionally, bombarding the silicon wafer with an electron beam in a vacuum environment includes:

[0050] Creating a vacuum environment: placing the silicon wafer into a vacuum chamber;

[0051] The silicon wafer is bombarded by the electron beam.

[0052] Optionally, measuring the reference mark using a particle counter to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter includes:

[0053] The particle counter is used to measure the reference mark on the silicon wafer to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter.

[0054] It should be noted that the first coordinate system is a reference coordinate system when the particle counter measures the silicon wafer.

[0055] The silicon wafer defect measurement method of the embodiment of the present disclosure can analyze the generation mechanism of the defects by measuring the characteristic information of the defects on the silicon wafer, thereby inferring the process steps where the defects are generated, and providing reference direction and data for improving the process steps.

[0056] Optionally, the characteristic information of the defect includes:

[0057] The type, morphology and equivalent size of the defects.

[0058] The silicon wafer defect measurement method disclosed in the present invention bombards a silicon wafer with an electron beam to form a reference mark on the wafer. The reference mark is measured using a particle counter to obtain a first reference coordinate of the reference mark in the particle counter's first coordinate system. When the silicon wafer is measured using an atomic force microscope, the reference mark can be used to correct for deviations caused by transferring the silicon wafer from the particle counter to the atomic force microscope, thereby determining the exact location of the defect and detecting its characteristic information. This method solves the problem of low measurement accuracy for smaller defects on silicon wafers in related technologies.

[0059] Optionally, bombarding the silicon wafer with an electron beam in a vacuum environment includes:

[0060] Bombarding any point on the silicon wafer with an electron beam to obtain a first marking point;

[0061] Electron bombardment is performed at preset intervals along the horizontal or vertical direction according to the first marking points to obtain the reference mark including a plurality of the first marking points.

[0062] In the embodiment of the present disclosure, the first marking point is obtained by bombarding any point on the silicon wafer with an electron beam. However, the size of the marking point obtained by the electron beam bombardment is small and cannot reach the measurement range of the atomic force microscope.

[0063] According to the first marking points, electron bombardment is performed at preset distances along the horizontal or vertical direction, and multiple first marking points bombarded by the electron beam constitute the reference mark; for example, 4 first marking points are bombarded at preset distances along the horizontal direction to constitute the reference mark.

[0064] It should be noted that, as shown in FIG2 , by bombarding the silicon wafer with electron beams multiple times, the size and depth of the marking points obtained are larger, and a raised wall-like defect is formed on the surface of the silicon wafer. The “wall thickness” is thickened by multiple bombardments, thereby forming a unique optical cavity structure to enhance the reflected signal, which can reach the measurement range of the atomic force microscope.

[0065] The silicon wafer defect measurement method of the disclosed embodiment bombards the silicon wafer with an electron beam at multiple first marking points, forming a raised wall-shaped defect on the surface of the silicon wafer. The "wall thickness" is thickened through multiple bombardments, thereby forming an optical cavity serving as the reference mark, which can reach the measurement range of the atomic force microscope and improve the measurement accuracy.

[0066] Optionally, measuring the silicon wafer using an atomic force microscope according to the first reference coordinate to obtain characteristic information of the defect includes:

[0067] Measuring the reference mark on the silicon wafer using an atomic force microscope optical system to obtain a second reference coordinate of the reference mark in a second coordinate system of the atomic force microscope;

[0068] Comparing the first reference coordinate with the second reference coordinate to obtain a coordinate error value;

[0069] Correcting the second coordinate system according to the coordinate error value;

[0070] The defect is measured using an atomic force microscope according to the corrected second coordinate system to obtain characteristic information of the defect.

[0071] It should be noted that the second coordinate system is a reference coordinate system when the optical system of the atomic force microscope detects the silicon wafer.

[0072] It should be noted that the correction of the second coordinate system includes correction of both the horizontal and vertical directions of the second coordinate system, so at least three points are required, which can be the first reference coordinates of the three marking points; the displacement deviation generated during the transfer of the silicon wafer from the particle counter to the atomic force microscope is calculated through the three points, and then the displacement deviation is compensated and adjusted.

[0073] The silicon wafer defect measurement method of the embodiment of the present disclosure corrects the deviation generated during the transfer of the silicon wafer from the particle counter to the atomic force microscope through the at least three reference marks, thereby enabling the atomic force microscope to accurately measure defects on the silicon wafer.

[0074] In another embodiment of the present disclosure, a method for measuring silicon wafer defects includes:

[0075] The silicon wafer was measured using a particle counter;

[0076] When a first defect is measured to exist on the silicon wafer, bombarding a region on the silicon wafer other than the first defect with an electron beam in a vacuum environment to obtain at least one reference mark;

[0077] Measuring the silicon wafer using a particle counter to obtain a first reference coordinate of the reference mark and a third reference coordinate of the first defect in a first coordinate system of the particle counter;

[0078] measuring the silicon wafer using an atomic force microscope according to the third reference coordinate or according to the first reference coordinate and the third reference coordinate to obtain characteristic information of the defect;

[0079] The characteristic information of the defect at least includes the size of the defect.

[0080] It should be noted that the first defect is a defect with a size greater than 12.5 nm.

[0081] Optionally, when the number of the first defects is greater than or equal to three, the silicon wafer is measured using an atomic force microscope according to the third reference coordinate to obtain characteristic information of the defects.

[0082] Specifically, according to the third reference coordinate, the silicon wafer is measured using an atomic force microscope to obtain characteristic information of the defect, including:

[0083] Measuring the first defect using an optical system of an atomic force microscope to obtain a fourth reference coordinate of the first defect in a second coordinate system of the atomic force microscope;

[0084] Comparing the third reference coordinate with the fourth reference coordinate to obtain a coordinate error value;

[0085] Correcting the second coordinate system according to the coordinate error value;

[0086] The defect is measured using an atomic force microscope according to the corrected second coordinate system to obtain characteristic information of the defect.

[0087] Optionally, when the number of the first defects is less than three, the silicon wafer is measured using an atomic force microscope according to the first reference coordinate and the third reference coordinate to obtain characteristic information of the defects.

[0088] Specifically, measuring the silicon wafer using an atomic force microscope according to the first reference coordinate and the third reference coordinate to obtain characteristic information of the defect includes:

[0089] Measuring the reference mark and the first defect using an optical system of an atomic force microscope to obtain a second reference coordinate of the reference mark and a fourth reference coordinate of the first defect in a second coordinate system of the atomic force microscope;

[0090] Comparing the first reference coordinate with the second reference coordinate, and comparing the third reference coordinate with the fourth reference coordinate, to obtain a coordinate error value;

[0091] Correcting the second coordinate system according to the coordinate error value;

[0092] The defect is measured using an atomic force microscope according to the corrected second coordinate system to obtain characteristic information of the defect.

[0093] It should be noted that calibration of the second coordinate system includes calibration in both the horizontal and vertical directions of the second coordinate system. Therefore, at least three points are required, which can be three first defects, two first defects and one reference mark, or one first defect and two reference marks. The displacement deviation generated during the transfer of the silicon wafer from the particle counter to the atomic force microscope is calculated using these three points, and compensation adjustments are then made to the displacement deviation.

[0094] Optionally, the acceleration voltage of the electron beam ranges from 5 kV to 25 kV;

[0095] The bombardment time of the silicon wafer by the electron beam is in the range of 3 minutes to 10 minutes.

[0096] Optionally, the silicon wafer is bombarded to construct the reference mark. Since the required size of the reference mark needs to be large enough, and the greater the acceleration voltage of the electron beam, the better the bombardment effect, and the longer the bombardment time, the better the bombardment effect; therefore, the bombardment time of the silicon wafer bombarded by the electron beam is inversely proportional to the acceleration voltage of the electron beam; the smaller the acceleration voltage of the electron beam, the longer the bombardment time required; the greater the acceleration voltage of the electron beam, the shorter the bombardment time required.

[0097] The silicon wafer defect measurement method of the embodiment of the present disclosure forms the reference mark by bombarding the silicon wafer, and the formation process of the reference mark does not introduce contamination. It can correct the offset during the transfer of the silicon wafer from the particle counter to the atomic force microscope, thereby improving the accuracy of measuring the defects of the silicon wafer.

[0098] In the embodiment of the present disclosure, in a vacuum environment, the silicon wafer is bombarded by an electron beam with an acceleration voltage of 25kV for 3 minutes to obtain a first marking point; and the bombardment is performed continuously multiple times at preset distances to obtain the reference mark.

[0099] In the embodiment of the present disclosure, in a vacuum environment, the silicon wafer is bombarded by an electron beam with an acceleration voltage of 20kV for 4 minutes to obtain a first marking point; and the bombardment is performed continuously multiple times at preset distances to obtain the reference mark.

[0100] In the embodiment of the present disclosure, in a vacuum environment, the silicon wafer is bombarded by an electron beam with an acceleration voltage of 15kV for 6 minutes to obtain a first marking point; and the bombardment is performed continuously multiple times at preset distances to obtain the reference mark.

[0101] In the embodiment of the present disclosure, in a vacuum environment, the silicon wafer is bombarded by an electron beam with an acceleration voltage of 10kV for 8 minutes to obtain a first marking point; and the bombardment is performed multiple times at preset distances to obtain the reference mark.

[0102] In the embodiment of the present disclosure, in a vacuum environment, the silicon wafer is bombarded by an electron beam with an acceleration voltage of 5kV for 10 minutes to obtain a first marking point; and the bombardment is performed continuously multiple times at preset distances to obtain the reference mark.

[0103] Optionally, the length of the reference mark ranges from 100 nm to 300 nm, the width of the reference mark ranges from 100 nm to 300 nm, and the depth of the reference mark is greater than 20 nm.

[0104] It should be noted that if the reference mark is too small, it will be difficult for the particle counter to measure the reference mark. If the reference mark is too large, the particle counter will not measure the reference mark at its center, causing coordinate deviation during the particle counter's measurement process. Therefore, the reference mark needs to be limited to a preset size.

[0105] In the embodiment of the present disclosure, the reference mark has a length range of 200 nm, a width of 100 nm, and a depth of 30 nm, thereby forming an optical cavity.

[0106] In the embodiment of the present disclosure, the reference mark has a length range of 200 nm, a width of 200 nm, and a depth of 40 nm, thereby forming an optical cavity.

[0107] In the embodiment of the present disclosure, the reference mark has a length range of 100 nm, a width of 200 nm, and a depth of 50 nm, thereby forming an optical cavity.

[0108] Optionally, the number of the first marking points ranges from 3 to 10. In the silicon wafer defect measurement method of the disclosed embodiment, the reference mark is formed by a plurality of the first marking points, thereby forming a reference mark of a required size, and the wall thickness of the reference mark is increased to form an optical cavity, thereby improving the measurement accuracy of the atomic force microscope.

[0109] In the embodiment of the present disclosure, the number of the first marking points is 3, which are located at the three vertices of a triangle respectively. The triangle formed by the three first marking points forms an optical cavity, so that the atomic force microscope can accurately determine the position coordinates of the reference mark.

[0110] In the embodiment of the present disclosure, the number of the first marking points is 3, all of which are located in a straight line. The reference mark is formed by the three first marking points, so that the atomic force microscope can accurately determine the position coordinates of the reference mark.

[0111] In the embodiment of the present disclosure, the number of the first marking points is 5, which are respectively located at the five vertices of a pentagon. The pentagon composed of the five first marking points forms an optical cavity, so that the atomic force microscope can accurately determine the position coordinates of the reference mark.

[0112] In the embodiment of the present disclosure, the number of the first marking points is 8, which are evenly distributed in a rectangular area. An optical cavity is formed by a pentagon composed of the eight first marking points, so that the atomic force microscope can accurately determine the position coordinates of the reference mark.

[0113] Optionally, the preset distance is less than or equal to the diameter of the electron beam.

[0114] It should be noted that the distance between each first marking point is less than or equal to the diameter of the electron beam, which enables each first marking point to contact each other, thereby thickening the wall thickness of the optical cavity formed by the reference mark and improving the size of the reference mark.

[0115] It should be noted that, the smaller the diameter of the electron beam is, the greater the number of the first marking points that need to be bombarded, thereby forming the reference marks constituting the optical cavity.

[0116] Optionally, the electron beam has a diameter ranging from 0.1 μm to 5 μm.

[0117] In the embodiment of the present disclosure, the diameter of the electron beam is 0.1 μm, and the number of the first marking points is 10, so as to constitute a sufficiently large first marking point.

[0118] In the embodiment of the present disclosure, the diameter of the electron beam is 2 μm, and the number of the first marking points is 7, so as to constitute a sufficiently large first marking point.

[0119] In the embodiment of the present disclosure, the diameter of the electron beam is 4 μm, and the number of the first marking points is 4, so as to constitute a sufficiently large first marking point.

[0120] In the embodiment of the present disclosure, the diameter of the electron beam is 5 μm, and the number of the first marking points is 3, so as to constitute a sufficiently large first marking point.

[0121] As shown in FIG3 , the embodiment of the present disclosure further provides a silicon wafer defect measurement device 300 , comprising:

[0122] A bombardment module 301 is used to bombard the silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks;

[0123] A first measurement module 302 is configured to measure the reference mark using a particle counter to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter;

[0124] A second measurement module 303 is configured to measure the silicon wafer using an atomic force microscope according to the first reference coordinates to obtain characteristic information of the defect;

[0125] The characteristic information of the defect at least includes the size of the defect.

[0126] The silicon wafer defect measurement device of the disclosed embodiment bombards a silicon wafer with an electron beam, forming a reference mark on the wafer. The device then measures the reference mark using a particle counter to obtain a first reference coordinate of the reference mark in the particle counter's first coordinate system. When the silicon wafer is measured using an atomic force microscope, the device uses the reference mark to correct for deviations caused by the transfer of the silicon wafer from the particle counter to the atomic force microscope, thereby determining the exact location of the defect and detecting its characteristic information. This device addresses the problem of low measurement accuracy for smaller defects on silicon wafers in related technologies.

[0127] It should be noted that the various embodiments in this specification are described in a progressive manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences from other embodiments. In particular, since the embodiments are generally similar to the product embodiments, the description is relatively simple. For relevant parts, refer to the partial description of the product embodiments.

[0128] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0129] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0130] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0131] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A method for measuring silicon wafer defects, comprising: bombarding the silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks; Using a particle counter to measure the reference mark, to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter; According to the first reference coordinates, measuring the silicon wafer using an atomic force microscope to obtain characteristic information of the defect; The characteristic information of the defect at least includes the size of the defect.

2. The silicon wafer defect measurement method according to claim 1, wherein: The method of bombarding the silicon wafer with an electron beam in a vacuum environment comprises: Bombarding any point on the silicon wafer with an electron beam to obtain a first marking point; Electron bombardment is performed at preset intervals along the horizontal or vertical direction according to the first marking points to obtain the reference mark including a plurality of the first marking points.

3. The silicon wafer defect measurement method according to claim 1, wherein: The step of measuring the silicon wafer using an atomic force microscope according to the first reference coordinate to obtain characteristic information of the defect includes: Measuring the reference mark on the silicon wafer using an atomic force microscope to obtain a second reference coordinate of the reference mark in a second coordinate system of the atomic force microscope; Comparing the first reference coordinate with the second reference coordinate to obtain a coordinate error value; Correcting the second coordinate system according to the coordinate error value; The defect is measured using an atomic force microscope according to the corrected second coordinate system to obtain characteristic information of the defect.

4. The silicon wafer defect measurement method according to claim 1 or 2, wherein: The accelerating voltage of the electron beam has a voltage value ranging from 5 kV to 25 kV.

5. The silicon wafer defect measurement method according to claim 1 or 2, wherein: The bombardment time of the silicon wafer by electron beam is in the range of 3 min to 10 min.

6. The silicon wafer defect measurement method according to claim 1 or 2, wherein: The length of the reference mark ranges from 100 nm to 300 nm, the width of the reference mark ranges from 100 nm to 300 nm, and the depth of the reference mark is greater than 20 nm.

7. The silicon wafer defect measurement method according to claim 2, wherein: The number of the first marking points ranges from 3 to 10.

8. The method for measuring silicon wafer defects according to claim 2, wherein: The preset distance is less than or equal to the diameter of the electron beam.

9. The method for measuring silicon wafer defects according to claim 1, 2 or 8, wherein: The diameter of the electron beam is in the range of 0.1 μm to 5 μm.

10. A silicon wafer defect measurement device, comprising: A bombardment module, used for bombarding the silicon wafer with an electron beam in a vacuum environment to obtain at least three reference marks; A first measuring module, configured to measure the reference mark by using a particle counter to obtain a first reference coordinate of the reference mark in a first coordinate system of the particle counter; A second measurement module is used to measure the silicon wafer using an atomic force microscope according to the first reference coordinate to obtain characteristic information of the defect; The characteristic information of the defect at least includes the size of the defect.

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