Dielectric plasma etching using c 2h 2f 2
The C2H2F2-based plasma etching method for dielectric materials in semiconductor manufacturing reduces CO2 equivalent emissions by at least 10% compared to CF4, while maintaining high etch rates and selectivity, effectively addressing the high GWP issues of traditional etching gases.
WO2025046295A1PCT designated stage expired Publication Date: 2025-03-06LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
Patent Information
- Application Number
- PCT/IB2024/000466
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-08-28
- Filing Date
- 2024-08-28
- Publication Date
- 2025-03-06
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Abstract
An etching method for forming a structure by selectively etching one or more dielectric films in a substrate using a patterned mask layer deposited on top of the one or more dielectric films comprises mounting the substrate in a reaction chamber, introducing an etching gas containing C2H2F2 into the reaction chamber, converting the etching gas to a plasma, and allowing an etching reaction to proceed between the plasma and the one or more dielectric films so that the one or more dielectric films are selectively etched versus the patterned mask layer to form the structure.
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Citation Information
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