Alignment device, alignment method, film deposition device, and manufacturing method

Abstract

Provided is an alignment device used for alignment of a substrate and a mask for forming a pattern on a film formation surface of the substrate, the alignment device characterized by comprising: a substrate holding part for holding the substrate; a mask holding part for holding the mask; and a drive unit for driving at least one of the substrate holding part and the mask holding part so as to change a relative position between the substrate holding part and the mask holding part in a plane along the film formation surface of the substrate held by the substrate holding part, in which one member among the substrate and the mask includes a protrusion provided on surfaces facing each other, the other member among the substrate and the mask includes a recess provided on the surfaces facing each other, and the drive unit drives at least one of the substrate holding part and the mask holding part such that the protrusion and the recess are fitted to each other.

Description

Alignment apparatus, alignment method, film forming apparatus, and manufacturing method

[0001] The present invention relates to an alignment apparatus, an alignment method, a film forming apparatus, and a manufacturing method.

[0002] Organic EL display devices (organic EL displays) are applied to, for example, smartphones, televisions, automotive displays, VR HMDs (Virtual Reality Head Mount Displays), etc. In the process of manufacturing organic EL display devices, a film formation apparatus is generally used when forming organic light-emitting elements (organic EL elements: OLEDs) on a substrate.

[0003] The film forming device deposits a deposition material (film forming material) emitted from a deposition source onto a substrate through a mask on which a pattern corresponding to the pixel pattern is formed, thereby forming (forming) a film such as an organic film or a metal film. During this process, it is necessary to align (align) the substrate and the mask with high precision.

[0004] Techniques for aligning a substrate and a mask have been proposed in the past (see Patent Document 1). Patent Document 1 discloses a technique in which the substrate and the mask are aligned while the substrate is spaced apart from the mask, and then the substrate and the mask are brought into close contact with each other.

[0005] Japanese Patent Application Laid-Open No. 2019-083311

[0006] However, in conventional technology, after aligning the substrate and mask, when the substrate and mask are brought into close contact with each other, the relative positions of the substrate and mask may shift (i.e., a positional shift occurs between the substrate and mask), which may result in a decrease in alignment accuracy.

[0007] The present invention provides an advantageous technique for aligning a substrate and a mask.

[0008] An alignment device according to one aspect of the present invention is an alignment device used to align a substrate with a mask for depositing a pattern on a deposition surface of the substrate, and comprises a substrate holding section for holding the substrate, a mask holding section for holding the mask, and a drive section for driving at least one of the substrate holding section and the mask holding section so as to change the relative position of the substrate holding section and the mask holding section within a plane along the deposition surface of the substrate held by the substrate holding section, wherein one of the substrate and the mask includes a convex portion provided on a surface facing each other, and the other of the substrate and the mask includes a concave portion provided on a surface facing each other, and the drive section drives at least one of the substrate holding section and the mask holding section so that the convex portion and the concave portion fit together.

[0009] According to the present invention, for example, it is possible to provide a technique that is advantageous for aligning a substrate and a mask.

[0010] Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which the same or similar elements are designated by the same reference numerals.

[0011] The accompanying drawings are included in the specification and constitute a part thereof, illustrate embodiments of the present invention, and are used to explain the principles of the present invention together with the description thereof.

[0023] Figure 1 is a diagram schematically illustrating the configuration of a production line to which a film formation apparatus according to one aspect of the present invention can be applied.

[0024] Figure 2 is a diagram schematically illustrating the configuration of a film formation apparatus according to one aspect of the present invention.

[0025] Figure 3 is a plan view illustrating the configuration of a substrate and a mask.

[0026] Figure 4 is a cross-sectional view illustrating a state in which the substrate and the mask are in close contact with each other.

[0027] Figure 5 is a cross-sectional view illustrating an enlarged view of convex portions provided on the substrate and concave portions provided on the mask.

[0028] Figure 6 is a cross-sectional view illustrating an enlarged view of convex portions provided on a bank and concave portions provided on a membrane portion of the mask.

[0029] Figure 7 is a cross-sectional view illustrating an enlarged view of a bank that functions as a convex portion and concave portions provided on a membrane portion of the mask.

[0029] Figure 8 is a diagram for explaining an organic EL display device as an electronic device.

[0030] Figure 9 is a diagram for explaining an organic EL display device as an electronic device.

[0012] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention as claimed, and not all combinations of features described in the embodiments are necessarily essential to the invention. Two or more of the features described in the embodiments may be combined in any desired manner. Furthermore, the same reference numerals are used to designate identical or similar components, and redundant descriptions will be omitted.

[0013] 1 is a diagram schematically illustrating the configuration (layout) of a manufacturing line 100 to which a film formation apparatus according to one aspect of the present invention can be applied. The manufacturing line 100 includes a system that performs a film formation process on a substrate that is carried in and then carries out the substrate after the film formation process, and is configured as, for example, a manufacturing line for electronic devices. In the following drawings, arrow Z indicates the up-down direction (vertical (gravitational) direction), and arrows X and Y indicate horizontal directions that are orthogonal to each other.

[0014] The production line 100 (film forming apparatus) is particularly suitable as a line for producing organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. Examples of electronic devices include light-emitting elements, photoelectric conversion elements, and touch panels. In this embodiment, the electronic devices include display devices (e.g., organic EL display devices) and lighting devices (e.g., organic EL lighting devices) equipped with light-emitting elements, and sensors (e.g., organic CMOS image sensors) equipped with photoelectric conversion elements.

[0015] In this embodiment, the production line 100 is embodied as a line for manufacturing display panels for organic EL display devices for smartphones or for VR HMDs. When manufacturing display panels for smartphones, 4.5-generation substrates (approximately 700 mm x approximately 900 mm), full-size 6th-generation substrates (approximately 1500 mm x approximately 1850 mm), or half-cut substrates (approximately 1500 mm x approximately 925 mm) are used. Films are formed on such substrates to form organic EL elements, and the substrates are then cut out to produce multiple small-sized panels. When manufacturing display panels for VR HMDs, silicon wafers of a predetermined size (e.g., 300 mm) are used. Films are formed on such silicon wafers to form organic EL elements, and the silicon wafer is then cut out along the regions (scribe regions) between the element formation regions to produce multiple small-sized panels. However, the size and type of the substrates are not particularly limited and can be set as appropriate.

[0016] 1, the manufacturing line 100 has a transfer chamber 120 having an octagonal shape in a plan view. A substrate 101 to be subjected to a film formation process is carried into the transfer chamber 120 via a transfer path 110 (carry-in path). After the film formation process, the substrate 101 is carried out from the transfer chamber 120 to a transfer path 111 (carry-out path).

[0017] A plurality of film formation apparatuses 1 that perform film formation processing on substrates 101 are arranged around the transfer chamber 120. A transfer chamber 130 that has an octagonal shape in a plan view is arranged adjacent to each of the film formation apparatuses 1. A storage chamber 140 that stores masks 102 is arranged around the transfer chamber 130.

[0018] The transfer chamber 120 is provided with a transfer unit 121 that transfers the substrate 101. In this embodiment, the transfer unit 121 includes a horizontal articulated robot, and transfers the substrate 101 while holding it in a horizontal position. The transfer unit 121 performs a carry-in operation of transferring the substrate 101, on which a film formation process is to be performed, from the transfer path 110 to the film formation apparatus 1, and a carry-out operation of transferring the substrate 101, on which the film formation process has been performed, from the film formation apparatus 1 to the transfer path 111.

[0019] Each transfer chamber 130 is provided with a transfer unit 131 that transfers the mask 102. In this embodiment, the transfer unit 131 includes a horizontal articulated robot, and transfers the mask 102 while holding it in a horizontal position. The transfer unit 131 performs an operation of transferring the mask 102 from the storage chamber 140 to the film forming apparatus 1, and an operation of transferring the mask 102 from the film forming apparatus 1 to the storage chamber 140.

[0020] FIG. 2 is a diagram schematically illustrating the configuration of a film forming apparatus 1 according to one aspect of the present invention. The film forming apparatus 1 performs a film forming process in which a deposition material is deposited (deposited) on a substrate 101 to form a film. In this embodiment, the film is formed on the substrate 101 via a mask 102. Specifically, the film forming apparatus 1 forms a thin film of the deposition material in a predetermined pattern on a deposition surface 101A of the substrate 101 via the mask 102. The material of the substrate 101 can be selected appropriately from glass, resin, metal, and the like. In this embodiment, the substrate 101 includes, for example, a glass substrate on which a thin film transistor (TFT) is formed or a silicon wafer (semiconductor wafer) on which a semiconductor element is formed. The mask 102 may be composed of silicon (Si) or a magnetic material such as metal. The deposition material may be an organic material or an inorganic material (e.g., a metal or a metal oxide). Here, an example will be described in which the film forming apparatus 1 performs a film forming process on the substrate 101 by vacuum deposition, but this is not limited to this, and various film forming processes (film forming methods) such as sputtering and CVD can be applied.

[0021] The film forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown) to maintain the internal space in a vacuum atmosphere.

[0022] An evaporation unit 10 is provided in the internal space of the vacuum chamber 2. The evaporation unit 10 includes an evaporation source that emits an evaporation material upward. A shutter 10a is provided above the evaporation unit 10 to restrict and release the evaporation material from the evaporation source. The shutter 10a is opened and closed by an opening / closing mechanism (not shown). FIG. 2 shows a state in which the shutter 10a is closed and the emission of the evaporation material from the evaporation unit 10 is restricted. An adhesion prevention plate 2a is also provided above the evaporation unit 10. The adhesion prevention plate 2a is provided at the top of the internal space of the vacuum chamber 2 and has the function of suppressing (preventing) the evaporation material emitted from the evaporation unit 10 from undesirably adhering to the structure.

[0023] A substrate holder 3 that holds the substrate 101 in a horizontal position is provided in the internal space of the vacuum chamber 2. The substrate holder 3 is located on the opposite side of the mask 102 in the internal space of the vacuum chamber 2. In this embodiment, the substrate holder 3 is configured as an electrostatic chuck that attracts and holds the substrate 101 by electrostatic force. Specifically, the substrate holder 3 attracts the surface of the substrate 101 opposite the film formation surface 101A, thereby holding the substrate 101 with the film formation surface 101A of the substrate 101 facing downward (in the -Z direction). The substrate holder 3 may be provided with a cooling plate 4 that includes, for example, a water cooling mechanism. The cooling plate 4 cools the substrate 101 via the substrate holder 3 during the film formation process.

[0024] The substrate holder 3 and the cooling plate 4 are supported (hanging) by a magnetic plate 5 via a support 5a. The magnetic plate 5 is a plate that applies a magnetic force to the mask 102 to attract the mask 102 when the mask 102 is made of a magnetic material. During the film formation process, the substrate 101 is sandwiched between the magnetic plate 5 and the mask 102 attracted by the magnetic plate 5. The magnetic plate 5 is provided to bring the substrate 101 and the mask 102 close to each other or to bring the substrate 101 and the mask 102 into close contact with each other (to improve contact).

[0025] The film forming apparatus 1 has a mask holding mechanism 6 for holding the mask 102. The mask holding mechanism 6 includes mask holders 6a spaced apart in the X direction and an actuator 6b that drives the mask holders 6a. The mask holders 6a include claws F1 provided at their lower ends, and the mask 102 (its peripheral edge) is placed on the claws F1 to hold the mask 102 in a horizontal position. The actuator 6b includes, for example, an electric cylinder or an electric ball screw mechanism, and raises and lowers the mask holders 6a (driving them in the Z direction).

[0026] The film forming apparatus 1 includes an alignment device 8 used to align the substrate 101 and the mask 102. The alignment device 8 includes a drive mechanism 80 and a plurality of measurement units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stand 83, and a position adjustment unit 84.

[0027] The distance adjustment unit 81 includes, for example, an electric cylinder or an electric ball screw mechanism, and is a mechanism for raising and lowering (driving) the support shaft 82 in the Z direction. A magnet plate 5 is supported (fixed) on the lower end of the support shaft 82. Therefore, when the distance adjustment unit 81 raises and lowers the support shaft 82, the substrate holder 3 is raised and lowered via the magnet plate 5. By raising and lowering the substrate holder 3, the distance between the substrate 101 and the mask 102 in the vertical direction (Z direction) is adjusted, and the substrate 101 and the mask 102 held by the substrate holder 3 are brought closer to or farther apart from each other. In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 closer to or farther apart from each other in the overlapping direction (Z direction). Note that the "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance. Therefore, the distance adjustment unit 81 can also be said to be a unit that adjusts the vertical position of the substrate 101 held by the substrate holder 3. The distance adjustment unit 81 is mounted on a position adjustment unit 84 via a stand 83 .

[0028] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 in the XY plane by displacing (moving) the substrate holding part 3 in the horizontal direction. In this manner, the position adjustment unit 84 functions as a unit that adjusts the relative horizontal positions of the substrate 101 and the mask 102. In this embodiment, the position adjustment unit 84 displaces the substrate holding part 3 in a rotational direction (θ direction) around the X, Y, and Z axes. Note that in this embodiment, the relative positions of the substrate 101 and the mask 102 are adjusted by fixing the position of the mask 102 and displacing the substrate 101, but this is not limited to this. For example, the relative positions of the substrate 101 and the mask 102 may be adjusted by fixing the position of the substrate 101 and displacing the mask 102, or by displacing both the substrate 101 and the mask 102. In other words, the position adjustment unit 84 only needs to function as a drive unit that drives at least one of the substrate holding unit 3 and the mask holding unit 6 a so as to change the relative position of the substrate holding unit 3 and the mask holding unit 6 a within the XY plane. Note that, here, within the XY plane means within a plane along the film formation surface 101A of the substrate 101 held by the substrate holding unit 3.

[0029] The position adjustment unit 84 includes a fixed plate 84a and a movable plate 84b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates. The fixed plate 84a is fixed to the upper wall 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 84a and the movable plate 84b to displace the movable plate 84b in rotational directions around axes in the X, Y, and Z directions relative to the fixed plate 84a.

[0030] A frame-shaped base 83 is placed on the movable plate 84b, and the base 83 supports the distance adjustment unit 81. Therefore, when the movable plate 84b is displaced, the base 83 and the distance adjustment unit 81 are displaced integrally, so that the substrate 101 held by the substrate holder 3 can be displaced in rotational directions around axes in the X, Y, and Z directions. Openings are formed in the upper wall 20 for accommodating the support shaft 82, mask holder 6a, measurement unit SR, etc. These openings are sealed with a sealing member (not shown), such as a bellows, to maintain the airtightness of the internal space of the vacuum chamber 2.

[0031] The measurement unit SR is embodied as an imaging device that captures an image of a measurement target and functions, for example, as a measuring instrument that measures the position of the measurement target. The measurement unit SR is provided, for example, on the upper wall portion 20 of the vacuum chamber 2. In this embodiment, the measurement unit SR detects marks (alignment marks) provided on the substrate 101 and the mask 102, which are placed in the internal space of the vacuum chamber 2, and measures the relative position (misalignment) between the substrate 101 and the mask 102 from these positions. In aligning the substrate 101 and the mask 102, the relative positions of the substrate 101 and the mask 102 are adjusted via the position adjustment unit 84 so that the misalignment between the substrate 101 and the mask 102 measured by the measurement unit SR falls within an allowable range.

[0032] The film forming apparatus 1 includes a control unit 9 configured as a computer (information processing device) that comprehensively controls the operation of each component of the film forming apparatus 1 and controls the entire film forming apparatus 1. The control unit 9 includes a processing unit 90, a storage unit 91, an input / output (I / O) interface 92, and a communication unit 93. The processing unit 90 includes a processor, such as a CPU, and executes programs stored in the storage unit 91 to realize various operations and processes of the film forming apparatus 1. The storage unit 91 includes storage devices such as a ROM, RAM, and HDD, and stores programs executed by the processing unit 90 and various control information. The I / O interface 92 is an interface for communication (transmission and reception of various information and signals) between the processing unit 90 and external devices. The communication unit 93 is a communication device that communicates with higher-level devices, other control devices, and the like via a communication line.

[0033] Hereinafter, an example of control of the film forming apparatus 1 executed by the control unit 9 (processing unit 90) will be described, in which the substrate 101 is carried in, undergoes film forming processing, and is then carried out.

[0034] First, the substrate 101 is carried into (the internal space of) the vacuum chamber 2. The substrate 101 is carried below the substrate holding part 3 by the transport unit 121. Then, the substrate 101 carried below the substrate holding part 3 is transferred onto the substrate holding part 3. For example, the transport unit 121 is raised (driven in the +Z direction) to press the substrate 101 against the substrate holding part 3. In this state, the function of the substrate holding part 3 as an electrostatic chuck is activated to attract the substrate 101, and the substrate 101 is held by the substrate holding part 3.

[0035] Next, the mask 102 is carried into (the internal space of) the vacuum chamber 2. The mask 102 is carried by the transport unit 131 from the storage chamber 140 to the vacuum chamber 2, and is carried below the mask holder 6a and below the substrate 101 held by the substrate holder 3. The mask 102, which is located below the mask holder 6a and the substrate 101, is then transferred to the mask holder 6a. For example, by raising the transport unit 131 (driving it in the +Z direction), the mask 102 is placed on the claws F1 of the mask holder 6a, and the mask 102 is held by the mask holder 6a. In addition, the mask holder 6a holding the mask 102 is further raised (driven in the +Z direction) by the actuator 6b, and the mask 102 is positioned at an alignment position for aligning the substrate 101 and the mask 102.

[0036] Next, the substrate 101 held by the substrate holder 3 is aligned with the mask 102 held by the mask holder 6a. The alignment between the substrate 101 and the mask 102 is initially performed when the substrate 101 and the mask 102 overlap when viewed from the Z direction and are not in physical contact with each other. In other words, alignment between the substrate 101 and the mask 102 is started when a gap is provided between the substrate 101 and the mask 102, i.e., when the substrate 101 is spaced apart from the mask 102. In this state, the measurement unit SR provided on the upper wall 20 of the vacuum chamber 2 detects the marks provided on the substrate 101 and the marks provided on the mask 102.

[0037] The measurement unit SR detects marks on the substrate 101 and marks on the mask 102, and measures the relative position (misalignment) between the substrate 101 and the mask 102 from their positions. If the misalignment between the substrate 101 and the mask 102 measured by the measurement unit SR is within the tolerance, the substrate 101 and the mask 102 are brought into close contact with each other. On the other hand, if the misalignment between the substrate 101 and the mask 102 measured by the measurement unit SR is not within the tolerance, the relative positions of the substrate 101 and the mask 102 are adjusted so that the misalignment falls within the tolerance. Specifically, first, based on the misalignment between the substrate 101 and the mask 102 measured by the measurement unit SR, the displacement amount of the substrate 101, which is the control amount required to bring the misalignment within the tolerance, is calculated. The misalignment between the substrate 101 and the mask 102 is defined by the distance and direction (X, Y, θ) of the misalignment. Then, based on the displacement amount (control amount) of the substrate 101, the position adjustment unit 84 drives (displaces) the substrate holder 3 within the XY plane to adjust the relative position of the substrate 101 with respect to the mask 102. Measurement of the relative position between the substrate 101 and the mask 102 by the measurement unit SR and adjustment of the position of the substrate 101 by the position adjustment unit 84 are repeated until the misalignment between the substrate 101 and the mask 102 falls within an allowable range. Whether the misalignment between the substrate 101 and the mask 102 falls within an allowable range can be determined, for example, by comparing the distance (average value or sum of squares) between the marks provided on the substrate 101 and the marks provided on the mask 102 with a threshold value.

[0038] When the misalignment between the substrate 101 and the mask 102 falls within the tolerance, for example, the substrate holder 3 is lowered (driven in the −Z direction) to bring the substrate 101 (the entire film formation surface 101A of the substrate 101) into close contact with the mask 102. At this time, physical contact between the substrate 101 and the mask 102 may cause a shift in the relative positions of the substrate 101 and the mask 102, resulting in a misalignment between the substrate 101 and the mask 102. Such misalignment can reduce alignment accuracy, and in particular, if it falls outside the tolerance, it can lead to a decrease in yield.

[0039] Therefore, in this embodiment, the substrate 101 and the mask 102 are provided with a configuration (structure) that is advantageous for reducing misalignment that occurs between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other. Hereinafter, the configuration that is advantageous for reducing misalignment that is provided on the substrate 101 and the mask 102 will be specifically described with reference to Figures 3 and 4. Figure 3 is a plan view showing the configuration of the substrate 101 and the mask 102, and Figure 4 is a cross-sectional view showing the state in which the substrate 101 and the mask 102 are in close contact with each other.

[0040] 3, in this embodiment, the substrate 101 has a film-forming surface 101A (the surface where the substrate 101 and the mask 102 face each other) that is the surface that comes into contact with the mask 102, and a convex portion 1012 that protrudes more than the surrounding area on the side where the mask 102 is placed. Meanwhile, the mask 102 has a facing surface 102A (the surface where the substrate 101 and the mask 102 face each other) that is the surface that comes into contact with the substrate 101, and a concave portion 1022 that is recessed into the facing surface 102A.

[0041] 3, in this embodiment, a plurality of convex portions 1012 are provided on the film formation surface 101A of the substrate 101, and a plurality of concave portions 1022 are provided on the opposing surface 102A of the mask 102, but this is not limiting. It is sufficient that at least one convex portion 1012 and at least one concave portion 1022 are provided on each of the film formation surface 101A of the substrate 101 and the opposing surface 102A of the mask 102.

[0042] Furthermore, in this embodiment, a convex portion 1012 is provided on the film formation surface 101A of the substrate 101, and a concave portion 1022 is provided on the opposing surface 102A of the mask 102. However, a concave portion recessed into the film formation surface 101A of the substrate 101 may be provided, and a convex portion protruding from the surrounding area may be provided on the opposing surface 102A of the mask 102 on the side where the substrate 101 is placed. In other words, it is sufficient that one of the substrate 101 and the mask 102 includes a convex portion provided on the opposing surface, and the other includes a concave portion provided on the opposing surface.

[0043] The convex portions 1012 and the concave portions 1022 are provided on the film formation surface 101A of the substrate 101 and the opposing surface 102A of the mask 102 so as to correspond to each other (in terms of their positions and numbers). Specifically, the convex portions 1012 and the concave portions 1022 are provided so that the convex portions 1012 and the concave portions 1022 directly face each other in a state in which the positional misalignment between the substrate 101 held by the substrate holding unit 3 and the mask 102 held by the mask holding unit 6a is within an allowable range. Furthermore, the convex portions 1012 and the concave portions 1022 are basically provided so that the number of the convex portions 1012 and the number of the concave portions 1022 are the same, but this is not limited thereto, and it is allowable that the number of the concave portions 1022 is smaller than the number of the convex portions 1012.

[0044] In this way, by providing the convex portion 1012 on the substrate 101 side and the concave portion 1022 on the mask 102 side, when the substrate 101 and the mask 102 are brought into close contact with each other, the convex portion 1012 and the concave portion 1022 can be fitted together as shown in Fig. 4. The fitting of the convex portion 1012 and the concave portion 1022 physically aligns the substrate 101 and the mask 102, thereby suppressing misalignment between the substrate 101 and the mask 102 that would otherwise occur when the substrate 101 and the mask 102 are brought into close contact with each other. Therefore, misalignment between the substrate 101 and the mask 102 that occurs when the substrate 101 and the mask 102 are brought into close contact with each other is reduced (minimized), and deterioration in alignment accuracy can be suppressed (prevented).

[0045] In this embodiment, before the substrate 101 and the mask 102 are brought into close contact with each other, the relative positions of the substrate 101 and the mask 102 are adjusted so that the positional misalignment between the substrate 101 and the mask 102 falls within an allowable range when the substrate 101 is separated from the mask 102. Therefore, when the substrate 101 and the mask 102 are brought into close contact with each other, the convex portion 1012 provided on the substrate 101 and the concave portion 1022 provided on the mask 102 are directly opposite each other. Therefore, the convex portion 1012 and the concave portion 1022 can be fitted together simply by lowering the substrate holder 3. However, it is not necessarily necessary to adjust the relative positions of the substrate 101 and the mask 102 before bringing the substrate 101 and the mask 102 into close contact with each other. In aligning the substrate 101 and the mask 102, when the substrate 101 and the mask 102 are brought into close contact with each other, at least one of the substrate holding portion 3 and the mask holding portion 6a may be driven within the XY plane so that the convex portion 1012 and the concave portion 1022 fit together.

[0046] As shown in FIG. 3 , the substrate 101 (its deposition surface 101A) generally has a plurality of chip regions 1014 in which chips are arranged. Meanwhile, the mask 102 (its opposing surface 102A) has a plurality of pattern regions 1024, each of which is formed of an opening pattern for forming a pattern in the chip region 1014, corresponding to each of the plurality of chip regions 1014. The pattern regions 1024 have the same dimensions (chip size) as the dimensions of the chips arranged in the chip region 1014. From the viewpoint of yield, it is preferable to reduce misalignment between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other for each chip region 1014 of the substrate 101. Therefore, as shown in FIG. 3 , it is preferable that the number of convex portions 1012 and concave portions 1022 provided on the substrate 101 and the mask 102 corresponds to the number of chip regions 1014 on the substrate 101. Here, the number corresponding to the number of chip areas 1014 on the substrate 101 is a number that contributes to reducing misalignment for each chip area 1014 on the substrate 101, and includes, for example, a number equal to the number of chip areas 1014 or a number greater than the number of chip areas 1014.

[0047] 3, in this embodiment, at least one convex portion 1012 is provided in the peripheral region 1016 of each of the plurality of chip regions 1014 on the substrate 101. Similarly, at least one concave portion 1022 is provided in the peripheral region 1026 of each of the plurality of pattern regions 1024 on the mask 102. This effectively reduces (minimizes) misalignment between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other for each chip region 1014 on the substrate 101, thereby preventing a decrease in yield due to such misalignment. Note that a similar effect can be achieved by providing at least one convex portion 1012 in the region between each of the plurality of chip regions 1014 and providing at least one concave portion 1022 in the region between each of the plurality of pattern regions 1024.

[0048] Furthermore, the convex portion 1012 and the concave portion 1022 must be provided with dimensions that allow them to fit (interlock) with each other (be insertable and detachable). Here, with reference to FIG. 5 , specific numerical examples of the dimensions of the convex portion 1012 and the concave portion 1022 will be described, taking as an example a case in which the convex portion 1012 and the concave portion 1022 each have a truncated cone shape. FIG. 5 is an enlarged cross-sectional view showing the convex portion 1012 provided on the substrate 101 (film formation surface 101A) and the concave portion 1022 provided on the mask 102 (opposing surface 102A). Referring to FIG. 5 , the diameter D1 of the upper base surface of the convex portion 1012 is 3.0 μm and the diameter d1 of the lower base surface is 3.1 μm, and the diameter D2 of the upper base surface of the concave portion 1022 is 3.1 μm and the diameter d2 of the lower base surface is 4.0 μm. Designing the convex portions 1012 and the concave portions 1022 to have such dimensions enables the convex portions 1012 and the concave portions 1022 to be smoothly fitted together, and also makes it possible to suppress misalignment between the substrate 101 and the mask 102 after the convex portions 1012 and the concave portions 1022 are fitted together. However, the shapes and dimensions of the convex portions 1012 and the concave portions 1022 can be set arbitrarily within a range in which the convex portions 1012 and the concave portions 1022 are fitted together and the subsequent misalignment between the substrate 101 and the mask 102 is acceptable.

[0049] The convex portions 1012 on the substrate 101 (film formation surface 101A) and the concave portions 1022 on the mask 102 (opposing surface 102A) can be formed by a semiconductor process (or a process similar thereto), and therefore can be provided with high positional accuracy and high dimensional accuracy. Furthermore, the positions of the concave portions 1022 provided in the mask 102 may be changed according to the RGB pattern (the arrangement of the chip regions 1014 on the substrate 101).

[0050] 6A and 6B, the chip region 1014 (or the chip arranged therein) is provided with a bank 1018 for defining the region (pixel) where a film is to be formed, and therefore the convex portion 1012 may be provided in the bank 1018. In this case, the concave portion 1022 is provided in the pattern region 1024, specifically, in the membrane portion 1028 including the pattern element PE that defines the opening pattern, so as to correspond to the convex portion 1012 provided in the bank 1018. Note that, as shown in FIG. 6B, it is preferable that one convex portion 1012 is provided for each of the multiple banks 1018. This reduces misalignment that occurs between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other for each pixel formed on the substrate 10, and suppresses a decrease in yield due to such misalignment. However, it is not an essential requirement to provide convex portions 1012 for all banks 1018, and it is sufficient to provide convex portions 1012 for some of the banks 1018 within the range of allowable positional misalignment between the substrate 101 and the mask 102 for each pixel. Figures 6A and 6B are cross-sectional views showing the configurations of the substrate 101 and the mask 102. Note that Figure 6B shows an enlarged view of a portion PT of the substrate 101 and the mask 102 shown in Figure 6A.

[0051] The thickness of the membrane portion 1028 of the mask 102 is generally about several μm. Therefore, when providing the convex portion 1012 on the bank 1018, it is necessary to design (set) the respective dimensions of the convex portion 1012 and the concave portion 1022 so that they can fit together, taking into account the thickness of the membrane portion 1028 of the mask 102. With reference to FIG. 7 , specific numerical examples of the respective dimensions of the convex portion 1012 and the concave portion 1022 will be described, taking as an example a case where the convex portion 1012 and the concave portion 1022 each have a truncated cone shape. FIG. 7 is an enlarged cross-sectional view showing the convex portion 1012 provided on the bank 1018 and the concave portion 1022 provided on the membrane portion 1028 of the mask 102. Referring to FIG. 7 , the convex portion 1012 provided on the bank 1018 has a diameter D11 of its upper base of 1.0 μm and a diameter d11 of its lower base of 1.1 μm. With regard to the recess 1022 provided in the membrane portion 1028, the diameter D22 of the upper bottom surface is 0.9 μm, and the diameter d22 of the lower bottom surface is 1.0 μm. By designing the protrusion 1012 and the recess 1022 to have such dimensions, the protrusion 1012 and the recess 1022 can be smoothly fitted together, and misalignment between the substrate 101 and the mask 102 after the protrusion 1012 and the recess 1022 are fitted together can be suppressed. However, the respective dimensions of the protrusion 1012 and the recess 1022 can be set arbitrarily within a range in which the protrusion 1012 and the recess 1022 can be fitted together and the subsequent misalignment between the substrate 101 and the mask 102 is acceptable.

[0052] Furthermore, the bank 1018 has a convex shape that protrudes toward the side on which the mask 102 is placed. Therefore, instead of providing the convex portion 1012 in the bank 1018, it is also possible to have the bank 1018 function as the convex portion 1012, as shown in FIG. 8 . In this case, the concave portion 1022 is provided in the pattern region 1024, specifically, in the membrane portion 1028 including the pattern element PE that defines the opening pattern, so as to correspond to the bank 1018 that functions as the convex portion 1012. By providing the concave portion 1022 corresponding to the bank 1018 in this way, it is possible to fit the bank 1018 and the concave portion 1022 when the substrate 101 and the mask 102 are brought into close contact with each other. The fit between the bank 1018 and the concave portion 1022 physically aligns the substrate 101 and the mask 102, thereby suppressing misalignment between the substrate 101 and the mask 102 that would occur when the substrate 101 and the mask 102 are brought into close contact with each other. Furthermore, it is also possible to suppress misalignment between the substrate 101 and the mask 102 for each pixel formed on the substrate 10. Therefore, misalignment that occurs between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other is reduced, and it is possible to suppress (prevent) a decrease in alignment accuracy. Figure 8 is an enlarged cross-sectional view showing the bank 1018 that functions as the convex portion 1012 and the concave portion 1022 provided in the membrane portion 1028 of the mask 102.

[0053] In this way, once the substrate 101 held by the substrate holding unit 3 and the mask 102 held by the mask holding unit 6a are aligned (contacted), a film formation process is performed to form a film on the film formation surface 101A of the substrate 101. Specifically, with the substrate 101 and the mask 102 in full contact with each other, the shutter 10a is opened and a vapor deposition material is released from the vapor deposition unit 10. The vapor deposition material released from the vapor deposition unit 10 adheres to the film formation surface 101A of the substrate 101 through the mask 102, thereby forming a film of the vapor deposition material in a predetermined pattern.

[0054] Next, the mask 102 is carried out from (the internal space of) the vacuum chamber 2. First, the substrate holder 3 is raised (driven in the +Z direction) to separate the substrate 101 from the mask 102. Then, the transport unit 131 is positioned below the mask 102, and the mask holder 6a is lowered (driven in the -Z direction), thereby transferring the mask 102 from the mask holder 6a to the transport unit 131. Then, the transport unit 131 transports the mask 102 to the storage chamber 140.

[0055] Next, the substrate 101 that has undergone the film formation process is carried out from (the internal space of) the vacuum chamber 2. The transfer unit 121 is positioned below the substrate 101, and the substrate holding part 3 is lowered (driven in the −Z direction), thereby transferring the substrate 101 from the substrate holding part 3 to the transfer unit 121. Then, the transfer unit 121 transfers the substrate 101 to the transfer path 111.

[0056] In this way, the process from carrying in the substrate 101, through the film formation process, to carrying out the substrate 101 is completed. In this embodiment, as described above, it is possible to reduce misalignment that occurs between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are brought into close contact with each other, and to suppress a decrease in the alignment accuracy between the substrate 101 and the mask 102. As a result, in the film formation process, a film of a vapor deposition material having a predetermined pattern can be formed at a predetermined position on the film formation surface 101A of the substrate 101.

[0057] Next, a manufacturing method for manufacturing an electronic device using the film forming apparatus 1 (or the manufacturing line 100 having the film forming apparatus 1) according to this embodiment will be described. Here, an organic EL display device will be described as an example of the electronic device.

[0058] First, an organic EL display device will be described. Fig. 9A is a diagram showing the overall configuration of an organic EL display device 50. Fig. 9B is a diagram showing the cross-sectional structure of one pixel of the organic EL display device 50.

[0059] As shown in FIG. 9A , the organic EL display device 50 has a display area 51 in which pixels 52, each including a plurality of light-emitting elements, are arranged in a matrix. As described below, each of the plurality of light-emitting elements has a structure including an organic layer (organic film) sandwiched between a pair of electrodes. In this embodiment, a pixel refers to the smallest unit capable of displaying a predetermined color in the display area 51. For example, in the organic EL display device 50, a pixel 52 is configured by a combination of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, which are capable of displaying different colors. The pixel 52 is typically configured by a combination of red, green, and blue light-emitting elements, but is not limited thereto. For example, the pixel 52 may be configured by a combination of yellow, cyan, and white light-emitting elements, as long as it is configured by light-emitting elements of at least one color.

[0060] FIG. 9B is a partial cross-sectional view taken along line A-B in FIG. 9A . Each pixel 52 is composed of an organic EL element having an anode 54, a hole transport layer 55, one of light-emitting layers 56R, 56G, and 56B, an electron transport layer 57, and a cathode 58 on a substrate 53. Of these, the hole transport layer 55, the light-emitting layers 56R, 56G, and 56B, and the electron transport layer 57 correspond to organic layers. In this embodiment, the light-emitting layer 56R is an organic EL layer that emits red light, the light-emitting layer 56G is an organic EL layer that emits green light, and the light-emitting layer 56B is an organic EL layer that emits blue light. The light-emitting layers 56R, 56G, and 56B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. The anode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the cathode 58 may be formed in common with the plurality of light-emitting layers 56R, 56G, and 56B, or may be formed for each light-emitting element. An insulating layer 59 is provided between the electrodes to prevent the anode 54 and the cathode 58 from shorting due to foreign matter. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer PL is provided to protect the organic EL element from moisture and oxygen.

[0061] 9B , the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL element. Furthermore, a hole injection layer having an energy band structure for facilitating the injection of holes from the anode 54 to the hole transport layer 55 may be formed between the anode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the cathode 58 and the electron transport layer 57.

[0062] A method for manufacturing an organic EL display device will now be described.

[0063] First, a substrate 53 on which a circuit (not shown) for driving the organic EL display device and an anode 54 are formed is prepared.

[0064] Next, an acrylic resin is formed by spin coating on the substrate 53 on which the anode 54 has been formed, and is patterned by lithography so that an opening is formed in the portion of the acrylic resin where the anode 54 has been formed, thereby forming an insulating layer 59. Such an opening corresponds to a light-emitting region where the light-emitting element actually emits light.

[0065] The substrate 53 with the patterned insulating layer 59 is carried into the film forming apparatus 1 (first film forming chamber) of the production line 100, and a hole transport layer 55 is formed as a common layer on the anode 54 of the display region 51. The hole transport layer 55 is formed by, for example, vacuum deposition. Since the hole transport layer 55 is actually formed to be larger than the display region 51, a high-resolution mask is not required.

[0066] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into the film forming apparatus 1 (second film forming chamber). The substrate 53 and a mask are aligned, and a red light-emitting layer 56R is formed through the mask on the portion of the substrate 53 where a red light-emitting element is to be formed.

[0067] Similar to the formation of the light-emitting layer 56R, the light-emitting layer 56G that emits green light is formed in the film-forming apparatus 1 (third film-forming chamber), and then the light-emitting layer 56B that emits blue light is formed in the film-forming apparatus 1 (fourth film-forming chamber). After the light-emitting layers 56R, 56G, and 56B are formed, the electron transport layer 57 is formed over the entire display area 51 in the film-forming apparatus 1 (fifth film-forming chamber). The electron transport layer 57 is formed as a layer common to the three light-emitting layers 56R, 56G, and 56B.

[0068] Next, the substrate 53 on which the electron transport layer 57 has been formed is carried into the film forming apparatus 1 (sixth film forming chamber), and the cathode 58 is formed.

[0069] Then, the substrate 53 on which the cathode 58 has been formed is carried into a sealing device, and the protective layer PL is formed by plasma CVD (sealing process), thereby completing the organic EL display device 50. Here, the protective layer PL is formed by the CVD method, but the method is not limited to this. For example, the protective layer PL may be formed by the ALD method or the inkjet method.

[0070] If the substrate 53 having the patterned insulating layer 59 is exposed to an atmosphere containing moisture or oxygen after being carried into the film forming apparatus 1 and before the protective layer PL is formed, the light-emitting layer made of an organic EL material may deteriorate. Therefore, it is preferable that the substrate 53 be carried into and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0071] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

[0072] This application claims priority based on Japanese Patent Application No. 2023-143161, filed September 4, 2023, the entire contents of which are incorporated herein by reference.

Claims

1. An alignment device used for aligning a substrate and a mask for depositing a pattern on a deposition surface of the substrate, comprising: a substrate holding section for holding the substrate; a mask holding section for holding the mask; and a drive section for driving at least one of the substrate holding section and the mask holding section so as to change the relative position of the substrate holding section and the mask holding section within a plane along the deposition surface of the substrate held by the substrate holding section, wherein one of the substrate and the mask includes a convex portion provided on a surface facing the substrate, and the other of the substrate and the mask includes a concave portion provided on a surface facing the substrate, and the drive section drives at least one of the substrate holding section and the mask holding section so that the convex portion and the concave portion fit together.

2. The alignment device as described in claim 1, characterized in that the one member includes a plurality of convex portions provided on the opposing surfaces, and the other member includes a plurality of concave portions provided on the opposing surfaces, and the driving unit drives at least one of the substrate holding unit and the mask holding unit so that each of the multiple convex portions engages with each of the multiple concave portions.

3. The alignment device according to claim 1, characterized in that: the substrate is provided with a plurality of chip areas; the mask is provided with a plurality of pattern areas corresponding to each of the plurality of chip areas; and the number of the convex portions and the concave portions corresponds to the number of the plurality of chip areas.

4. The alignment device according to claim 3, wherein the number of said protrusions and said recesses is the same as the number of said plurality of chip regions.

5. An alignment device as described in claim 3, characterized in that one of the convex portion and the concave portion is arranged so that at least one is located in the peripheral region of each of the plurality of chip regions, and the other of the convex portion and the concave portion is arranged so that at least one is located in the peripheral region of each of the plurality of pattern regions.

6. An alignment device as described in claim 3, characterized in that one of the convex portion and the concave portion is arranged so that at least one is located in a region between each of the multiple chip regions, and the other of the convex portion and the concave portion is arranged so that at least one is located in a region between each of the multiple pattern regions.

7. The alignment apparatus of claim 1, wherein the substrate comprises a semiconductor wafer.

8. The alignment apparatus of claim 1, wherein the mask comprises a mask made of silicon.

9. An alignment device as described in claim 1, characterized in that the substrate is provided with a plurality of chip regions, the mask is provided with a plurality of pattern regions corresponding to each of the plurality of chip regions, the convex portion is provided in a bank provided in the chip region, and the concave portion is provided in a membrane portion in the pattern region.

10. An alignment device as described in claim 1, characterized in that the substrate is provided with a plurality of chip regions, the mask is provided with a plurality of pattern regions corresponding to each of the plurality of chip regions, the convex portions are banks provided in the chip regions, and the concave portions are provided in a membrane portion in the pattern regions corresponding to the banks.

11. A method for aligning a substrate and a mask for depositing a pattern on a deposition surface of the substrate, comprising: a step of aligning the substrate and the mask using the alignment apparatus according to claim 1.

12. A film forming apparatus for forming a film on a substrate through a mask, comprising: an alignment device according to claim 1 for aligning the substrate and the mask.

13. A method for producing an electronic device, comprising using the film forming apparatus according to claim 12.

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