Semiconductor light-emitting device for display pixel, and display module and display device including same

Abstract

An embodiment relates to a semiconductor light-emitting device for a display pixel, and a display module and a display device including same. A semiconductor light-emitting device for a display pixel according to an embodiment of the present invention may comprise: a substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially arranged on the substrate; a first electrode arranged on the first conductive semiconductor layer; and a second electrode arranged on the second conductive semiconductor layer. The outer periphery of one side and the outer periphery of the other side of the light-emitting structure may be spaced different distances from the outer periphery of one side and the outer periphery of the other side of the substrate, respectively. The outer periphery of the light-emitting structure in a first direction may be spaced a first distance from the outer periphery of the substrate in the first direction, and the outer periphery of the light-emitting structure in the direction opposite the first direction may be spaced a second distance from the outer periphery of the substrate in the direction opposite the first direction, the second distance being greater than the first distance.

Description

Semiconductor light-emitting element for display pixels and display module and display device including the same

[0001] The present invention relates to a semiconductor light-emitting element for a display pixel and a display module and display device including the same.

[0002] Large-area display devices include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses micro-LEDs, which are semiconductor light-emitting elements with a diameter or cross-sectional area of ​​100㎛ or less, as display elements.

[0004] Micro-LED displays use semiconductor light-emitting diodes (micro-LEDs) as display elements, so they have superior performance in many characteristics, including contrast ratio, response speed, color reproducibility, viewing angle, brightness, resolution, lifespan, luminous efficiency, and brightness.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust the size and resolution by separating and combining the screen in a modular manner, and the advantage of being able to implement a flexible display. They are being applied not only to TVs but also to digital signage.

[0006]

[0007] Digital signage is a display installed inside or outside a building using a digital information display (DID), and is a device that provides images or videos containing advertisements or various information.

[0008] Types of digital signage include outdoor digital signage and indoor digital signage.

[0009] Outdoor digital signage refers to digital signage installed on building exteriors, billboards, or for outdoor cinemas. Indoor digital signage refers to digital signage installed on the interior walls of large shopping malls or in the form of signboards.

[0010]

[0011] Digital signage can use micro-sized semiconductor light emitting diodes (LEDs) as display elements.

[0012] Meanwhile, semiconductor light-emitting devices can be grown in the form of an epilayer on a sapphire substrate and then manufactured into individual chips.

[0013] However, according to the internal technology, there is a problem in which the light distribution of the light emitting element is biased due to the crystallinity of the light emitting element.

[0014] Additionally, according to internal technology, there is a problem where colors appear different depending on the viewing direction when looking at the display device from the outside.

[0015] To solve this problem, the applicant of this application studied how to have adjacent semiconductor light-emitting elements have a predetermined tilt angle, but the tilt angles are arranged symmetrically.

[0016] Through this research, the problem of light distribution bias due to the crystallinity of light-emitting elements in display devices using light-emitting elements with a tilt-angle symmetrical arrangement structure and the problem of colors appearing different depending on the viewing direction when viewing the display device from the outside were solved to some extent.

[0017]

[0018] However, in the case of internal technology, the problem of fine vertical lines occurring due to differences in brightness between adjacent pixels, resulting in a deterioration in image quality, has been studied, and a solution to this problem needs to be found.

[0019] One of the technical challenges of the embodiment is to solve the problem of deterioration of image quality due to the occurrence of fine vertical lines caused by differences in brightness between adjacent pixels.

[0020] The technical tasks of the embodiments are not limited to those described in this article, but include those understood from the description of the invention.

[0021] A semiconductor light-emitting element for a display pixel according to an embodiment may include a substrate (110s), a light-emitting structure (110L) including a first conductive semiconductor layer (111), an active layer (113), and a second conductive semiconductor layer (112) sequentially arranged on the substrate (110s), a first electrode (115) arranged on the first conductive semiconductor layer (111), and a second electrode (116) arranged on the second conductive semiconductor layer (112).

[0022] The outer periphery on one side and the outer periphery on the other side of the above light-emitting structure (110L) may be spaced apart from the outer periphery on one side and the outer periphery on the other side of the substrate (110s) by different distances, respectively.

[0023] The outer edge of the light-emitting structure (110L) in the first direction (X) may be spaced apart from the outer edge of the substrate (110s) in the first direction (X) by a first distance (D1), and the outer edge of the light-emitting structure (110L) on the opposite side in the first direction (X) may be spaced apart from the outer edge of the substrate (110s) in the opposite side in the first direction (X) by a second distance (D2) that is longer than the first distance (D1).

[0024] The area of ​​the above substrate (110s) may be wider than the area of ​​the above light-emitting structure (110L).

[0025] The above light-emitting structure (110L) has a first width (W1) in a first direction (X), a second width (W2) in a second direction (Y) perpendicular to the first direction (X), and the first electrode (115) has a third width (W3) in the second direction (Y), and the third width (W3) of the first electrode (115) may correspond to the second width (W2) of the light-emitting structure (110L).

[0026] The third width (W3) of the first electrode (115) may have a difference of within ±5% from the second width (W2) of the light-emitting structure (110L).

[0027] The outer edge of the first direction (X) of the active layer (113) may be spaced apart from the outer edge of the first direction (X) of the substrate (110s) by a third distance (D3) longer than the first distance (D1), and the outer edge of the other side of the first direction (X) of the active layer (113) may be spaced apart from the outer edge of the other side of the first direction (X) of the substrate (110s) by a second distance (D2).

[0028] The above third distance (D3) may have a difference of within ±20% from the above second distance (D2).

[0029]

[0030] A display module (200) according to an embodiment may include one or more display panels (210) that output an image, a module holder (220) on which the display panels (210) are placed, and a module cover (230) placed on the outside of the module holder (220).

[0031] The above display panel (210) may include a semiconductor light emitting element for any one of the display pixels.

[0032] The above display panel (210) includes a plurality of first semiconductor light-emitting elements (110a) arranged adjacently on a predetermined wiring board, and the wiring board may include a first wiring (151) and a second wiring (152).

[0033] The above first semiconductor light-emitting element (110a) may include a first-first semiconductor light-emitting element (110a1) and a first-second semiconductor light-emitting element (110a2) which are symmetrically arranged and mounted on the first wiring (151) and the second wiring (152), respectively.

[0034] The n electrode and p electrode of the 1-1 semiconductor light-emitting element (110a1) mounted on each of the first wiring (151) and second wiring (152) and the n electrode and p electrode of the 1-2 semiconductor light-emitting element (110a2) can be symmetrically arranged.

[0035] At least one of the substrate (110s) and the first conductive semiconductor layer (111) may include symmetrically inclined side surfaces.

[0036]

[0037] A display device according to an embodiment may include any one of the above display modules.

[0038] According to an embodiment, the problem of deterioration of image quality due to the occurrence of fine vertical lines caused by differences in brightness between adjacent pixels can be solved.

[0039] For example, according to an embodiment, the light emitting area of ​​a semiconductor light emitting element (110) is controlled to have a symmetrical structure in conjunction with the arrangement structure of the first electrode (115), and the arrangement position of the light emitting area is also arranged at the center of the substrate, so that the light distribution can be controlled to be uniform and symmetrical.

[0040] Accordingly, even when the display panel including the semiconductor light-emitting elements (110) according to the embodiment is viewed from the lower left direction (LB), there is a special technical effect in which the difference in brightness between adjacent pixels is significantly reduced and is not recognized as a fine vertical line.

[0041] In addition, according to an embodiment, the deviation between the third distance (D3) at which the outer edge of the first direction (X) of the active layer (113) is spaced from the outer edge of the first direction (X) of the substrate (110s) and the second distance (D2) at which the outer edge of the other side of the first direction (X) of the active layer (113) is spaced from the outer edge of the other side of the first direction (X) of the substrate (110s) is controlled to have a difference of within ±20%, so that the position of the active layer, which is the light-emitting region, is arranged at the center of the substrate, thereby symmetrically controlling the light distribution.

[0042]

[0043] The technical effects of the embodiments are not limited to those described in this article, but include those understood from the description of the invention.

[0044] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment.

[0045] FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0046] FIG. 3 is a plan view of one display panel (210) included in a display panel (210) according to an embodiment.

[0047] FIG. 4 is a cross-sectional view of a semiconductor light emitting device package along line A1-A1' in a display panel (210) according to the embodiment illustrated in FIG. 3.

[0048] Fig. 5a is a plan view of a semiconductor light-emitting element (10) in internal technology.

[0049] Fig. 5b is a cross-sectional view along line A2-A2' of the semiconductor light-emitting element (10) in the internal technology illustrated in Fig. 5a.

[0050] Fig. 6a is a light-emitting optical photograph of a semiconductor light-emitting element (10) in the internal technology illustrated in Fig. 5a.

[0051] Fig. 6b shows light distribution data for a semiconductor light-emitting element (10) in internal technology.

[0052] Figure 7a shows the luminance distribution data when the display panel of the internal technology is viewed from the lower left (LB).

[0053] Figure 7b shows the luminance distribution data when the display panel of the internal technology is viewed from the lower right (RB).

[0054] Fig. 8a is a plan view of a semiconductor light-emitting element (110) for a display pixel according to an embodiment.

[0055] FIG. 8b is a cross-sectional view along line A3-A3' of a semiconductor light-emitting element (110) for a display pixel according to the embodiment illustrated in FIG. 8a.

[0056] FIG. 9a is a light-emitting optical photograph of a semiconductor light-emitting device (110) according to the embodiment illustrated in FIG. 8a.

[0057] Figure 9b shows light distribution data for a semiconductor light-emitting device (110) according to an embodiment.

[0058] Figure 9c is luminance distribution data when viewing a display panel including semiconductor light-emitting elements (110) according to an embodiment from the lower left direction (LB).

[0059] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. The suffixes "module" and "part" used in the following description for components are given or used interchangeably for the sake of ease of writing the specification, and do not in themselves have distinct meanings or roles. In addition, the attached drawings are intended to facilitate easy understanding of the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is referred to as existing "on" another element, this includes that it may be directly on the other element, or that other intermediate elements may exist therebetween.

[0060] The display devices described in this specification may include digital signage, digital TVs, mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, tablet PCs, Ultra-Books, desktop computers, and the like. However, the configuration according to the embodiments described in this specification may also be applied to devices capable of displaying, even if they are new product types developed in the future.

[0061]

[0062] A semiconductor light-emitting element for a display pixel and a display device including the same according to the following embodiments are described.

[0063] (Example)

[0064] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment. The display device (1000) according to the embodiment may include a plurality of assembled display modules (200).

[0065] The display device (1000) of the embodiment can be applied to digital signage. For example, FIG. 1 is an example of indoor digital signage, but the display device (1000) of the embodiment can also be applied to outdoor digital signage.

[0066]

[0067] FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0068] The display panel (200) illustrated in FIG. 2 can be mounted on each cabinet and assembled in a block manner to implement the display device (1000) of the embodiment.

[0069] The display module (200) of the embodiment may include a plurality of display panels (210) that output images, a module holder (220) on which the display panels (210) are placed, and a module cover (230) placed on the outside of the module holder (220).

[0070] The above-described plurality of display panels (210) can be arranged in a grid shape on a module holder (220) to form a single display module (200), and the individual display modules (200) can be assembled in a predetermined cabinet shape to implement a display device (1000) according to an embodiment. Display data can be transmitted to the assembled individual display modules (200) via wired or wireless means.

[0071]

[0072] FIG. 3 is a plan view of one display panel (210) included in a display panel (210) according to an embodiment.

[0073] FIG. 4 is a cross-sectional view of a semiconductor light-emitting device package along line A1-A1' in a display panel (210) according to the embodiment illustrated in FIG. 3. The semiconductor light-emitting device package according to the embodiment may include a first semiconductor light-emitting device (110a) disposed adjacent to a wiring board (150).

[0074] Referring to FIG. 3, a display panel (210) according to an embodiment may include a semiconductor light-emitting element (100) for display pixels that implement each pixel.

[0075] For example, a semiconductor light-emitting element (100) for a display pixel according to an embodiment may include, but is not limited to, a first semiconductor light-emitting element (110a), a second semiconductor light-emitting element (110b), and a third semiconductor light-emitting element (110c).

[0076] Each of the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be arranged in a repeating manner to form individual subpixels. For example, the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively, but are not limited thereto.

[0077] The first to third semiconductor light-emitting elements (110a, 110b, 110c) may have a size in the micrometer (㎛) unit. The micrometer (㎛) size may mean that the width of at least one side of the light-emitting element has a size of several to several hundred ㎛.

[0078]

[0079] Next, referring to FIG. 4, each of the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be placed on a wiring board (150). FIG. 4 is a cross-sectional view of a semiconductor light-emitting element package in which adjacent first semiconductor light-emitting elements (110a) are placed on a wiring board (150).

[0080] For example, a first wiring (151) and a second wiring (152) may be arranged on a wiring board (150). The first wiring (151) may be a common wiring that applies negative (-) power, and the second wiring (152) may be a wiring that applies positive (+) power, but is not limited thereto.

[0081] The above first semiconductor light-emitting element (110a) may include a first-first semiconductor light-emitting element (110a1) and a first-second semiconductor light-emitting element (110a2) that are arranged adjacently.

[0082] Each of the above-mentioned first-first semiconductor light-emitting element (110a1) and the first-second semiconductor light-emitting element (110a2) may be mounted on the first wiring (151) and the second wiring (152) in a flip-chip form, but is not limited thereto.

[0083] According to an embodiment, the first-first semiconductor light-emitting element (110a1) and the first-second semiconductor light-emitting element (110a2) mounted on the first wiring (151) and the second wiring (152) can be arranged symmetrically.

[0084] For example, according to an embodiment, a second wire (152) that applies positive (+) power and a first wire (151) that applies negative (-) power in adjacent sub-pixels can be arranged symmetrically to each other.

[0085] In addition, the n electrode and p electrode of the 1-1 semiconductor light-emitting element (110a1) mounted on each of the first wiring (151) and the second wiring (152) and the n electrode and p electrode of the 1-2 semiconductor light-emitting element (110a2) may also be symmetrically arranged, but are not limited thereto.

[0086]

[0087] Next, Fig. 5a is a plan view of a semiconductor light-emitting element (10) in the internal technology, and Fig. 5b is a cross-sectional view along line A2-A2' of the semiconductor light-emitting element (10) in the internal technology illustrated in Fig. 5a.

[0088] Referring to FIGS. 5a and 5b, a semiconductor light-emitting device (10) in an internal technology may include a first conductive semiconductor layer (11), an active layer (13), and a second conductive semiconductor layer (12) sequentially arranged on a substrate (10s). The first conductive semiconductor layer (11), the active layer (13), and the second conductive semiconductor layer (12) may form a single light-emitting structure.

[0089] The first conductive semiconductor layer (11) may be an n-type semiconductor layer, and the second conductive semiconductor layer (12) may be a p-type semiconductor layer, but is not limited thereto.

[0090] The semiconductor light-emitting element (10) in the internal technology may include a first electrode (15) arranged on an exposed first conductive semiconductor layer (11) and a second electrode (16) arranged on the second conductive semiconductor layer (12). The semiconductor light-emitting element (10) in the internal technology may be mounted on a predetermined package substrate in a flip-chip manner, but is not limited thereto.

[0091]

[0092] As described above, through internal research, the problem of light distribution bias due to the crystallinity of the light emitting element and the problem of colors appearing different depending on the viewing direction when viewing the display device from the outside have been somewhat resolved in display devices using light emitting elements with a tilt angle symmetrical arrangement structure.

[0093]

[0094] However, in the case of internal technology, the problem of fine vertical lines occurring due to differences in brightness between adjacent pixels, resulting in a deterioration in image quality, has been studied, and a solution to this problem needs to be found.

[0095]

[0096] First, FIG. 6a is a light-emitting optical photograph of a semiconductor light-emitting element (10) in the internal technology illustrated in FIG. 5a, and FIG. 6b is light distribution data for a semiconductor light-emitting element (10) in the internal technology.

[0097] Referring to Fig. 6b, it was confirmed that the light distribution in the semiconductor light-emitting element (10) in the internal technology illustrated in Fig. 5a is not symmetrical but asymmetrical.

[0098]

[0099] In particular, FIGS. 7a and 7b are luminance distribution data in a display panel of internal technology including semiconductor light-emitting elements (10) in internal technology.

[0100] Figure 7a is luminance distribution data when the display panel of the internal technology including semiconductor light-emitting elements (10) in the internal technology is viewed from the lower left direction (LB).

[0101] Referring to Fig. 7a, the luminance difference between adjacent pixels is very large, about 14%, and as a result, when the display panel of the internal technology is viewed from the lower left (LB), fine vertical lines are recognized, resulting in a problem of poor image quality.

[0102]

[0103] On the other hand, Fig. 7b is luminance distribution data when the display panel of the internal technology including semiconductor light-emitting elements (10) in the internal technology is viewed from the lower right direction (RB).

[0104] Referring to Figure 7b, the luminance difference between adjacent pixels was approximately 1.5%, which was not a significant difference. In other words, when viewing the display panel of the internal technology from the lower right (RB), fine vertical lines were not recognized.

[0105]

[0106] Ultimately, according to the internal technology, when looking at the display device from the outside, there is a problem that the brightness difference between adjacent pixels occurs depending on the viewing direction, resulting in fine vertical lines, which in turn degrades the image quality.

[0107]

[0108] Hereinafter, a semiconductor light-emitting device for a display pixel according to an embodiment for solving the following technical problem will be described.

[0109] FIG. 8a is a plan view of a semiconductor light-emitting element (110) for a display pixel constituting a display panel (210) according to the embodiment illustrated in FIG. 3.

[0110] FIG. 8b is a cross-sectional view taken along line A3-A3' of a semiconductor light-emitting device (110) for a display pixel according to the embodiment illustrated in FIG. 8a. Hereinafter, the “semiconductor light-emitting device for a display pixel according to the embodiment” may be abbreviated as “semiconductor light-emitting device according to the embodiment.”

[0111]

[0112] First, referring to FIG. 8b, a semiconductor light-emitting device (110) according to an embodiment may include a first conductive semiconductor layer (111), an active layer (113), and a second conductive semiconductor layer (112) sequentially arranged on a substrate (110s). The first conductive semiconductor layer (111), the active layer (113), and the second conductive semiconductor layer (112) may form one light-emitting structure (110L).

[0113] The first conductive semiconductor layer (111) may be an n-type semiconductor layer, and the second conductive semiconductor layer (112) may be a p-type semiconductor layer, but is not limited thereto.

[0114] A semiconductor light-emitting device (110) according to an embodiment may include a first electrode (115) disposed on an exposed first conductive semiconductor layer (111) and a second electrode (116) disposed on the second conductive semiconductor layer (112). The semiconductor light-emitting device (110) according to an embodiment may be mounted on a wiring board (150) in a flip-chip manner, but is not limited thereto.

[0115] Fig. 8c is a cross-sectional view of a semiconductor light-emitting device (120) according to the second embodiment.

[0116] In the semiconductor light-emitting device (120) according to the second embodiment, the substrate (110s) and the first conductive semiconductor layer (111) may include side surfaces symmetrically inclined at a first angle (Θ1) and a second angle (Θ1), respectively, but are not limited thereto.

[0117]

[0118] Referring again to FIGS. 8a and 8b, in the semiconductor light-emitting device (110) according to the embodiment, the area of ​​the substrate (110s) may be wider than the area of ​​the light-emitting structure (110L).

[0119] In an embodiment, there is a technical effect that can improve the light extraction and diffusion effect of light emitted from a semiconductor light-emitting device mounted in a flip-chip manner by making the area of ​​the substrate (110s) wider than the area of ​​the light-emitting structure (110L).

[0120]

[0121] Next, in the semiconductor light-emitting device (110) of the embodiment, one outer side and the other outer side of the light-emitting structure (110L) may be spaced apart from one outer side and the other outer side of the substrate (110s) by different distances, respectively.

[0122] For example, referring to FIG. 8a, the first direction (X) outer edge of the light-emitting structure (110L) can be spaced apart from the first direction (X) outer edge of the substrate (110s) by a first distance (D1).

[0123] At this time, the outer edge opposite the first direction (X) of the light-emitting structure (110L) can be spaced apart from the outer edge opposite the first direction (X) of the substrate (110s) by a second distance (D2) that is longer than the first distance (D1).

[0124]

[0125] In addition, the light-emitting structure (110L) of the semiconductor light-emitting device (110) according to the embodiment may have a first width (W1) in a first direction (X) and a second width (W2) in a second direction (Y) perpendicular to the first direction (X).

[0126] Additionally, the first electrode (115) of the semiconductor light-emitting device (110) according to the embodiment may have a third width (W3) in the second direction (Y).

[0127] The third width (W3) of the first electrode (115) of the semiconductor light-emitting device (110) according to the embodiment may correspond to the second width (W2) in the second direction (Y) of the light-emitting structure (110L).

[0128] For example, the third width (W3) of the first electrode (115) may have a difference of within ±5% from the second width (W2) of the light-emitting structure (110L). For example, the third width (W3) of the first electrode (115) may have a difference of within ±3% from the second width (W2) of the light-emitting structure (110L). For example, the third width (W3) of the first electrode (115) may have a difference of within ±1% from the second width (W2) of the light-emitting structure (110L).

[0129]

[0130] According to the embodiment, the third width (W3) in the second direction (Y) of the first electrode (115) of the semiconductor light-emitting element (110) corresponds to the second width (W2) in the second direction (Y) of the light-emitting structure (110L), thereby improving the carrier injection efficiency while maintaining uniformity in the light-emitting structure, thereby improving the luminance.

[0131]

[0132] In addition, according to the embodiment, the outer edge of the active layer (113) of the light-emitting structure (110L) in the first direction (X) may be spaced apart from the outer edge of the substrate (110s) in the first direction (X) by a third distance (D3) that is further than the first distance (D1).

[0133] At this time, the outer edge of the other side in the first direction (X) of the active layer (113) of the light-emitting structure (110L) can be spaced apart from the outer edge of the other side in the first direction (X) of the substrate (110s) by a second distance (D2).

[0134] The third distance (D3) may have a difference of within ±20% from the second distance (D2). In addition, the third distance (D3) may have a difference of within ±15% from the second distance (D2). In addition, the third distance (D3) may have a difference of within ±10% from the second distance (D2). In addition, the third distance (D3) may have a difference of within ±5% from the second distance (D2).

[0135]

[0136] According to an embodiment, the deviation between the third distance (D3) at which the outer edge of the first direction (X) of the active layer (113) is spaced from the outer edge of the first direction (X) of the substrate (110s) and the second distance (D2) at which the outer edge of the other side of the first direction (X) of the active layer (113) is spaced from the outer edge of the other side of the first direction (X) of the substrate (110s) is controlled to have a difference of within ±20%, thereby arranging the position of the active layer, which is the light-emitting region, at the center of the substrate, thereby symmetrically controlling the light distribution.

[0137]

[0138] According to an embodiment, the third width (W3) of the first electrode (115) of the semiconductor light-emitting element (110) can be controlled to correspond to the second width (W2) in the second direction (Y) of the light-emitting structure (110L) so that the active layer (113) of the light-emitting structure can be positioned at the center with respect to the substrate (110s).

[0139] Accordingly, according to the embodiment, the light emitting area of ​​the semiconductor light emitting element (110) is controlled to have a symmetrical structure in conjunction with the arrangement structure of the first electrode (115), and the arrangement position is also arranged centrally, thereby controlling the light distribution to be uniform and symmetrical.

[0140] For example, FIG. 9a is a light-emitting optical photograph of a semiconductor light-emitting device (110) according to the embodiment illustrated in FIG. 8a, and FIG. 9b is light distribution data for a semiconductor light-emitting device (110) according to the embodiment.

[0141] Referring to FIG. 9b, the light distribution in the semiconductor light-emitting device (110) according to the embodiment has a symmetrically uniform technical effect.

[0142] In particular, FIG. 9c is luminance distribution data (LuE) when the display panel including semiconductor light-emitting elements (110) according to the embodiment is viewed from the lower left direction (LB).

[0143]

[0144] Referring to Fig. 7a for a moment, when the display panel of the internal technology is viewed from the lower left (LB), there is a problem that the brightness difference between adjacent pixels is very large at about 14%, which is recognized as a fine vertical line and the image quality deteriorates.

[0145] On the other hand, referring to Fig. 7b, when the display panel of the internal technology was viewed from the lower right (RB), the difference in brightness between adjacent pixels was not large at about 1.5%, and when viewed from the lower right (RB), no fine vertical lines were recognized.

[0146] Internal research has shown that when the luminance difference between adjacent pixels exceeds approximately 7%, they are perceived as fine vertical lines.

[0147]

[0148] Referring again to FIG. 9c, even when the display panel including semiconductor light-emitting elements (110) according to the embodiment is viewed from the lower left direction (LB), there is a special technical effect in which the difference in brightness between adjacent pixels is significantly reduced to about 5%, and thus is not recognized as a fine vertical line.

[0149] Meanwhile, when the display panel including the semiconductor light-emitting elements (110) according to the embodiment is viewed from the lower right direction (RB), there is almost no difference in brightness, which is less than about 1%.

[0150]

[0151] According to an embodiment, the problem of deterioration of image quality due to the occurrence of fine vertical lines caused by differences in brightness between adjacent pixels can be solved.

[0152] For example, according to an embodiment, the light emitting area of ​​a semiconductor light emitting element (110) is controlled to have a symmetrical structure in conjunction with the arrangement structure of the first electrode (115), and the arrangement position of the light emitting area is also arranged at the center of the substrate, so that the light distribution can be controlled to be uniform and symmetrical.

[0153] Accordingly, even when the display panel including the semiconductor light-emitting elements (110) according to the embodiment is viewed from the lower left direction (LB), there is a special technical effect in which the difference in brightness between adjacent pixels is significantly reduced and is not recognized as a fine vertical line.

[0154] The embodiment can be adopted in the field of displays that display images or information.

[0155] For example, the display device according to the embodiment may include a digital signage, a digital TV, a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation, a slate PC, a tablet PC, an Ultra-Book, a desktop computer, and the like. In addition, the configuration according to the embodiment described in this specification may be applied to a device capable of displaying, even if it is a new product type developed in the future.

[0156] The display device of the embodiment can be applied to outdoor digital signage and indoor digital signage.

Claims

1. Substrate; A light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially arranged on the substrate; A first electrode disposed on the first conductive semiconductor layer; and A second electrode disposed on the second conductive semiconductor layer; A semiconductor light-emitting element for a display pixel, wherein one outer surface and the other outer surface of the light-emitting structure are spaced apart from one outer surface and the other outer surface of the substrate by different distances, respectively.

2. In paragraph 1, The first direction outer edge of the above light-emitting structure is spaced apart from the first direction outer edge of the substrate by a first distance, A semiconductor light-emitting element for a display pixel, wherein the outer edge of the light-emitting structure opposite to the first direction is spaced apart from the outer edge of the substrate opposite to the first direction by a second distance longer than the first distance.

3. In paragraph 1, The area of ​​the above substrate is larger than the area of ​​the above light-emitting structure, In the first paragraph, The above light-emitting structure has a first width in a first direction and a second width in a second direction perpendicular to the first direction, The first electrode has a third width in the second direction, A semiconductor light-emitting element for a display pixel, wherein the third width of the first electrode corresponds to the second width of the light-emitting structure.

4. In paragraph 3, A semiconductor light-emitting element for a display pixel, wherein the third width of the first electrode has a difference of within ±5% from the second width of the light-emitting structure.

5. In paragraph 1, The first direction outer edge of the above active layer is spaced apart from the first direction outer edge of the above substrate by a third distance longer than the first distance, The first direction outer side of the above active layer is spaced apart from the first direction outer side of the above substrate by a second distance, A semiconductor light-emitting element for a display pixel, wherein the third distance has a difference of within ±20% from the second distance.

6. One or more display panels that output images; a module holder on which the above display panel is placed; and A module cover disposed outside the module holder; The above display panel, A display module comprising a semiconductor light-emitting element for a display pixel according to any one of claims 1 to 5.

7. In paragraph 6, The above display panel, It comprises a plurality of first semiconductor light emitting elements arranged adjacently on a predetermined wiring board, The above wiring board includes a first wiring and a second wiring, The above first semiconductor light emitting device is, A display module comprising a first-first semiconductor light-emitting element and a first-second semiconductor light-emitting element, which are symmetrically arranged and mounted on the first wiring and the second wiring, respectively.

8. In paragraph 7, A display module in which the n electrode and p electrode of the 1-1 semiconductor light-emitting element and the n electrode and p electrode of the 1-2 semiconductor light-emitting element are symmetrically arranged on each of the first and second wirings.

9. In paragraph 7, At least one of the substrate and the first conductive semiconductor layer includes symmetrically inclined side surfaces, 10. A display device including the display module of paragraph 6.

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