Display device including semiconductor light-emitting elements

Abstract

A display device including semiconductor light-emitting elements according to an embodiment of the present invention comprises: a substrate; a plurality of semiconductor light-emitting elements disposed on the substrate; a first light-scattering layer surrounding the plurality of semiconductor light-emitting elements; a second light-scattering layer disposed on the plurality of semiconductor light-emitting elements; and a light control layer disposed on side surfaces of the plurality of semiconductor light-emitting elements, wherein the first light-scattering layer may include nano-sized first light-scattering agents.

Description

Display device including a semiconductor light-emitting element

[0001] The embodiment relates to a display device including a semiconductor light emitting element.

[0002] Large-area display devices include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses micro-LEDs, which are semiconductor light-emitting elements with a diameter or cross-sectional area of ​​100㎛ or less, as display elements.

[0004] Micro-LED displays use semiconductor light-emitting diodes (micro-LEDs) as display elements, so they have superior performance in many characteristics, including contrast ratio, response speed, color reproducibility, viewing angle, brightness, resolution, lifespan, luminous efficiency, and brightness.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust the size and resolution by separating and combining the screen in a modular manner, and the advantage of being able to implement a flexible display. They are being applied not only to TVs but also to digital signage.

[0006]

[0007] Digital signage is a display installed inside or outside a building using a digital information display (DID), and is a device that provides images or videos containing advertisements or various information.

[0008] Types of digital signage include outdoor digital signage and indoor digital signage.

[0009] Outdoor digital signage refers to digital signage installed on building exteriors, billboards, or for outdoor cinemas. Indoor digital signage refers to digital signage installed on the interior walls of large shopping malls or in the form of signboards.

[0010]

[0011] Digital signage can use micro-sized semiconductor light emitting diodes (LEDs) as display elements.

[0012] Meanwhile, semiconductor light-emitting devices can be grown in the form of an epilayer on a sapphire substrate and then manufactured into individual chips.

[0013] However, according to the internal technology, there is a problem that color and brightness differences occur for each pixel. This is because a problem was discovered in which the semiconductor light-emitting element was transferred while being randomly tilted by the solder during the transfer process of the semiconductor light-emitting element. Accordingly, the difference in tilt was reduced to some extent by pressurizing the semiconductor light-emitting element, but the problem of the center of light emission being different for each pixel still exists, and a solution is needed.

[0014] Additionally, according to internal technology, the problem of the speckle phenomenon, in which spots are visible, becoming more severe depending on the viewing angle, that is, when viewing the display device from the front or the side, has been studied.

[0015] One of the technical challenges of the embodiment is to reduce the color difference between pixels.

[0016] Additionally, one of the technical challenges of the embodiment is to prevent the speckle phenomenon from worsening depending on the viewing angle in the display device.

[0017] The technical tasks of the embodiment are not limited to those described in this article, but include those understood from the description of the invention.

[0018] A display device including a semiconductor light-emitting element according to an embodiment comprises: a substrate; a plurality of semiconductor light-emitting elements disposed on the substrate; a first light-scattering layer disposed to surround the plurality of semiconductor light-emitting elements; a second light-scattering layer disposed on the plurality of semiconductor light-emitting elements; and a light-control layer positioned on a side surface of the plurality of semiconductor light-emitting elements; wherein the first light-scattering layer may include a first light-scattering agent having a nano-size.

[0019] Additionally, in the embodiment, the second light scattering layer includes a second light scattering agent, and the first light scattering agent may be smaller in size than the second light scattering agent.

[0020] Additionally, the embodiment includes solder positioned between the plurality of semiconductor light-emitting elements and the substrate, and the solder may have different shapes.

[0021] Additionally, in an embodiment, the light control layer may not vertically overlap with the semiconductor light emitting element.

[0022] Additionally, in an embodiment, the first light scattering layer may be positioned below the upper surface of the semiconductor light-emitting element.

[0023] Additionally, in an embodiment, the light control layer may include a reflective film.

[0024] Additionally, in an embodiment, the light control layer may include a black layer.

[0025] Additionally, in an embodiment, the semiconductor light-emitting device may be connected to the substrate in a flip-chip manner.

[0026] Additionally, in an embodiment, the second light scattering layer may be thicker than the first light scattering layer.

[0027] Additionally, in the embodiment, the first light scattering agent may include at least one of SiO2, TiO2, and ZrO2.

[0028] According to the embodiment, there is a technical effect that can improve the uniformity of luminance according to the viewing angle within the pixel.

[0029] Additionally, according to the embodiment, there is a technical effect that can improve the brightness at the front side of the pixel.

[0030] For example, the embodiment can improve the brightness of the front surface by disposing a side light control layer between semiconductor light emitting elements within a pixel to absorb some of the light emitted laterally or reflect it toward the front surface of the semiconductor light emitting elements.

[0031] Additionally, according to the embodiment, there is a technical effect capable of preventing a speckle phenomenon in a display device.

[0032] For example, the embodiment can prevent speckle phenomenon depending on the viewing angle by disposing a nano-sized scattering agent around a semiconductor light-emitting element to scatter light in all directions.

[0033] The technical effects of the embodiments are not limited to those described in this article, but include those understood from the description of the invention.

[0034] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment.

[0035] FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0036] FIG. 3 is a plan view of one display panel (210) included in a display panel (210) according to an embodiment.

[0037] FIG. 4 is a cross-sectional view of a semiconductor light emitting device package along line A1-A1' in a display panel (210) according to the embodiment illustrated in FIG. 3.

[0038] Figure 5 is a cross-sectional view of a display device according to internal technology.

[0039] Figure 6 is a graph of relative brightness according to viewing angle in a display device according to internal technology.

[0040] Fig. 7 is a display device including a semiconductor light-emitting element according to the first embodiment.

[0041] Fig. 8 is a display device including a semiconductor light-emitting element according to the second embodiment.

[0042] Fig. 9 is a cross-sectional view showing in detail a semiconductor light-emitting device in an embodiment.

[0043] Figures 10a and 10b are graphs showing the color difference according to the viewing angle in the display devices of the comparative example and the embodiment.

[0044] Figure 11 shows speckle distribution data, which is the white quality of a display device, depending on whether or not the embodiment is applied.

[0045] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. The suffixes "module" and "part" used in the following description for components are given or used interchangeably for the sake of ease of writing the specification, and do not in themselves have distinct meanings or roles. In addition, the attached drawings are intended to facilitate easy understanding of the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is referred to as existing "on" another element, this includes that it may be directly on the other element, or that other intermediate elements may exist therebetween.

[0046] The display devices described in this specification may include digital signage, digital TVs, mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, tablet PCs, Ultra-Books, desktop computers, and the like. However, the configuration according to the embodiments described in this specification may also be applied to devices capable of displaying, even if they are new product types developed in the future.

[0047]

[0048] A semiconductor light-emitting element for a display pixel and a display device including the same according to the following embodiments are described.

[0049] (Example)

[0050] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment. The display device (1000) according to the embodiment may include a plurality of assembled display modules (200).

[0051] The display device (1000) of the embodiment can be applied to digital signage. For example, FIG. 1 is an example of indoor digital signage, but the display device (1000) of the embodiment can also be applied to outdoor digital signage.

[0052]

[0053] FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0054] The display panel (200) illustrated in FIG. 2 can be mounted on each cabinet and assembled in a block manner to implement the display device (1000) of the embodiment.

[0055] The display module (200) of the embodiment may include a plurality of display panels (210) that output images, a module holder (220) on which the display panels (210) are placed, and a module cover (230) placed on the outside of the module holder (220).

[0056] The above-described plurality of display panels (210) can be arranged in a grid shape on a module holder (220) to form a single display module (200), and the individual display modules (200) can be assembled in a predetermined cabinet shape to implement a display device (1000) according to an embodiment. Display data can be transmitted to the assembled individual display modules (200) via wired or wireless means.

[0057]

[0058] FIG. 3 is a plan view of one display panel (210) included in a display panel (210) according to an embodiment.

[0059] FIG. 4 is a cross-sectional view of a semiconductor light-emitting device package along line A1-A1' in a display panel (210) according to the embodiment illustrated in FIG. 3. The semiconductor light-emitting device package according to the embodiment may include a first semiconductor light-emitting device (110a) disposed adjacent to a wiring board (150).

[0060] Referring to FIG. 3, a display panel (210) according to an embodiment may include a semiconductor light-emitting element (100) for display pixels that implement each pixel.

[0061] For example, a semiconductor light-emitting element (100) for a display pixel according to an embodiment may include, but is not limited to, a first semiconductor light-emitting element (110a), a second semiconductor light-emitting element (110b), and a third semiconductor light-emitting element (110c).

[0062] Each of the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be arranged in a repeating manner to form individual subpixels. For example, the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively, but are not limited thereto.

[0063] The first to third semiconductor light-emitting elements (110a, 110b, 110c) may have a size in the micrometer (㎛) unit. The micrometer (㎛) size may mean that the width of at least one side of the light-emitting element has a size of several to several hundred ㎛.

[0064]

[0065] Next, referring to FIG. 4, each of the first to third semiconductor light-emitting elements (110a, 110b, 110c) may be placed on a wiring board (150). FIG. 4 is a cross-sectional view of a semiconductor light-emitting element package in which adjacent first semiconductor light-emitting elements (110a) are placed on a wiring board (150).

[0066] For example, a first wiring (151) and a second wiring (152) may be arranged on a wiring board (150). The first wiring (151) may be a common wiring that applies negative (-) power, and the second wiring (152) may be a wiring that applies positive (+) power, but is not limited thereto.

[0067] The above first semiconductor light-emitting element (110a) may include a first-first semiconductor light-emitting element (110a1) and a first-second semiconductor light-emitting element (110a2) that are arranged adjacently.

[0068] Each of the above-mentioned first-first semiconductor light-emitting element (110a1) and the first-second semiconductor light-emitting element (110a2) may be mounted on the first wiring (151) and the second wiring (152) in a flip-chip form, but is not limited thereto.

[0069] According to an embodiment, the first-first semiconductor light-emitting element (110a1) and the first-second semiconductor light-emitting element (110a2) mounted on the first wiring (151) and the second wiring (152) can be arranged symmetrically.

[0070] For example, according to an embodiment, a second wire (152) that applies positive (+) power and a first wire (151) that applies negative (-) power in adjacent sub-pixels can be arranged symmetrically to each other.

[0071] In addition, the n electrode and p electrode of the 1-1 semiconductor light-emitting element (110a1) mounted on each of the first wiring (151) and the second wiring (152) and the n electrode and p electrode of the 1-2 semiconductor light-emitting element (110a2) may also be symmetrically arranged, but are not limited thereto.

[0072]

[0073] Next, Fig. 5 is a drawing showing one pixel of a display device according to internal technology, and Fig. 6 is a graph showing relative brightness according to a viewing angle in the internal technology of Fig. 5.

[0074] Referring to Fig. 5, a pad (20) is placed on a wiring board (10), and solder (17) may be placed on the pad (20). The solder (17) may include a plurality of pieces, and each piece may be placed at a position where a semiconductor light-emitting element is to be transferred within a pixel. In addition, a semiconductor light-emitting element (50) may be placed on the solder (17).

[0075] Meanwhile, since the solder to which the semiconductor light-emitting element is transferred is fluid, each solder can be formed into a different shape. Accordingly, each of the plurality of solders (17) can have different heights and different slopes of their upper surfaces.

[0076] Accordingly, the heights of the semiconductor light-emitting elements (50) respectively disposed on the solder (17) may be different from each other. Specifically, the semiconductor light-emitting element (50) may include a first semiconductor light-emitting element (51), a second semiconductor light-emitting element (52), and a third semiconductor light-emitting element (53). Meanwhile, the width of the solder (17) is larger than the horizontal width of the semiconductor light-emitting element (50), and the semiconductor light-emitting element (50) may be transferred to a random area on the solder (17) during the transfer process. Since each solder (17) is not formed uniformly, the inclinations of the first, second, and third semiconductor light-emitting elements (51, 52, 53) are formed differently. Accordingly, there is a problem in that the center of the light-emitting surface is formed along the inclination.

[0077] In this case, the light-emitting surfaces of the three colors R, G, and B are biased, so the color of the white color is reduced and a specific color may be emphasized. In addition, there is a problem that each pixel has a different light-emitting center, resulting in differences in color or brightness between pixels.

[0078]

[0079] Referring to Fig. 6, (a) is a first color and (b) is a second color. The first color and the second color may be any one of R, G, and B colors, and may be a white color represented by one pixel. The first color and the second color may have non-uniform relative brightness up to 90° to the left and right with respect to the front (0°). The display device being studied in the internal technology had a problem in that the brightness was relatively higher at about 30° to 50° than the front. Due to this, there was a problem in that the difference in color perception also worsened depending on the viewing angle. As a result, the visibility and aesthetics of the display device may be degraded.

[0080] Additionally, according to the internal technology, there is a problem in which the speckle phenomenon, in which spots are visible, becomes more severe depending on the viewing angle, that is, when viewing the display device from the front or the side.

[0081]

[0082] Hereinafter, an embodiment for solving the above problem will be described.

[0083] Fig. 7 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a first embodiment. Fig. 7 may be a cross-sectional view taken along line B1-B1' of Fig. 3. Referring to Fig. 7, in the first embodiment, a wiring board (150), a semiconductor light-emitting element (100), a second light-scattering layer (140), and a scattering layer (165) may be disposed. In detail, the semiconductor light-emitting element (100) may be mounted on a wiring board (150) having a first wiring (151) and a second wiring (152). The first and second wirings (151, 152) and the semiconductor light-emitting element (100) may be electrically connected by a connecting electrode (125). The connecting electrode (125) may be solder or an electrode.

[0084] The semiconductor light-emitting device (100) may include a first semiconductor light-emitting device (110a), a second semiconductor light-emitting device (110b), and a third semiconductor light-emitting device (110c). In addition, a second light-scattering layer (140) may be arranged to cover the plurality of semiconductor light-emitting devices (100).

[0085]

[0086] The second light scattering layer (140) may include a second light scattering agent (145). The second light scattering agent (145) may have a size in micrometers (㎛). In addition, the first light scattering layer (165) may be arranged on the wiring substrate (150) to surround the semiconductor light emitting element (100).

[0087] The first light scattering layer (165) may include a first light scattering agent (160). The first light scattering agent (160) may have a size in nanometers (nm). In addition, the distance between particles of the first light scattering agent (160) may also be in nanometers. The first light scattering layer (165) may be in contact with a side surface of the semiconductor light emitting element and may be positioned between a plurality of semiconductor light emitting elements.

[0088] For example, the first light scattering agent (160) may have a size of about 50 nm or less. In addition, the first light scattering agent (160) may have a size of about 30 nm or less. In addition, the first light scattering agent (160) may have a size of about 20 nm or less.

[0089] In addition, the first light scattering agent (160) may be provided in the first light scattering layer (165) in an amount of about 20 wt% or less. In addition, the first light scattering agent (160) may be provided in the first light scattering layer (165) in an amount of about 10 wt% or less. In addition, the first light scattering agent (160) may be provided in the first light scattering layer (165) in an amount of about 5 wt% or less.

[0090] The second light scattering layer (140) may have a thickness greater than that of the first light scattering layer (165).

[0091] In addition, the upper surface of the first light scattering layer (165) may be in direct contact with the second light scattering layer (140), and the lower surface may be in direct contact with the wiring board (150), but a separate adhesive layer may be placed therebetween. The first light scattering layer (165) may be positioned lower than the upper surface of the semiconductor light emitting element (100).

[0092]

[0093] The size of the first light scattering agent (160) may be smaller than the size of the second light scattering agent (145). The second light scattering agent (145) may have particles larger than the wavelength of light generated from the semiconductor light emitting device and may cause Mie scattering. In addition, the first light scattering agent (160) may have particles smaller than the wavelength of light generated from the semiconductor light emitting device and may cause Rayleigh scattering. The first light scattering agent (160) may include any one of SiO2, TiO2, and ZrO2, but is not limited thereto.

[0094] Accordingly, since light can be scattered in all directions by the first light scattering agent (160), even if the semiconductor light-emitting device is tilted and transferred during the transfer process, light can be emitted in all directions rather than having the light-emitting center point in a specific direction. Here, the light-emitting center can be considered as the direction in which the amount of light is maximum depending on the angle in the semiconductor light-emitting device.

[0095] In detail, referring to FIG. 5, when the first semiconductor light-emitting element (51), the second semiconductor light-emitting element (52), and the third semiconductor light-emitting element (53) are arranged in a tilted manner so as to have different inclinations in the internal technology, the centers of their respective light-emitting elements become different, and the color quality of the white color produced by the R, G, and B colors may be reduced.

[0096] On the other hand, according to an embodiment, even if the first semiconductor light-emitting element (110a), the second semiconductor light-emitting element (110b), and the third semiconductor light-emitting element (110c) are arranged to be tilted so as to have different inclinations, even if the light-emitting centers of each semiconductor light-emitting element are formed differently through nano-sized scattering agents, light can be scattered in all directions to form uniform light within the pixel.

[0097] Therefore, the embodiment has a technical effect of preventing the speckle phenomenon of a display device without reducing the black characteristic by arranging a nano-sized first light scattering agent surrounding a semiconductor light emitting element.

[0098]

[0099] Fig. 8 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a second embodiment. The second embodiment may employ the technical features of the first embodiment. For example, the second embodiment has a technical effect of uniformly forming light within a pixel even when there is a problem of the semiconductor light-emitting element being tilted and transferred, through a first light scattering agent (160) surrounding the semiconductor light-emitting element (100).

[0100] Referring to FIG. 8, the second embodiment may further include a side light control layer (170). The side light control layer may be positioned between each of the plurality of semiconductor light emitting elements (100). The side light control layer (170) may be formed to have a curved surface on one side, but may also be formed to have a flat surface.

[0101] The above-mentioned side light control layer (170) may be positioned lower than the upper surface of the semiconductor light emitting device (100). In addition, the above-mentioned side light control layer (170) may not vertically overlap with the semiconductor light emitting device (100), and may vertically overlap with the first light scattering layer (165).

[0102] The above-described side light control layer (170) may include a black layer. In this case, light escaping from each side of the semiconductor light emitting device (100) can be absorbed and the light can be focused on the front side of the semiconductor light emitting device (100). Accordingly, there is a technical effect of reducing the brightness of the side side and improving the brightness of the front side, thereby improving the uniformity of brightness according to the viewing angle.

[0103] Additionally, the side light control layer (170) may include a reflective layer. In this case, light escaping from the side of the semiconductor light-emitting device may be reflected to the front surface of the semiconductor light-emitting device, thereby improving the brightness of the front surface. Accordingly, there is a technical effect of improving the uniformity of brightness according to the viewing angle.

[0104]

[0105] Fig. 9 is a cross-sectional view illustrating a semiconductor light-emitting device of an embodiment in detail. Referring to Fig. 9, a semiconductor light-emitting device (100) may have a light-emitting structure disposed on a substrate (154). The substrate (154) may be a growth substrate for growing the light-emitting structure and may be a sapphire substrate. The light-emitting structure may include a first conductive semiconductor layer (155), an active layer (156), and a second conductive semiconductor layer (157) sequentially disposed.

[0106] The first conductive semiconductor layer (155) may be an n-type semiconductor layer, and the second conductive semiconductor layer (157) may be a p-type semiconductor layer, but is not limited thereto.

[0107] The semiconductor light-emitting device (100) of the embodiment may include a first electrode (158) disposed on an exposed first conductive semiconductor layer (155) and a second electrode (159) disposed on the second conductive semiconductor layer (157). The semiconductor light-emitting device (100) of the embodiment may be mounted on a wiring board in a flip-chip manner, but is not limited thereto. Accordingly, the upper surfaces of the first electrode (158) and the second electrode (159) may be positioned at the same height.

[0108]

[0109] Figure 10a is a graph of the color difference (△UV) according to the viewing angle of a display device in internal technology. Referring to Figure 10a, the color difference of the display device according to internal technology, which is a comparative example (R1), increases from the front (0°) to the side.

[0110]

[0111] On the other hand, Fig. 10b is a graph showing the color difference according to the viewing angle of the embodiment (E1) to which the display device according to the comparative example (R1) is applied. Referring to Fig. 10b, the graph of the embodiment (E1) may have a smaller △UV than the graph of the comparative example (R1). For example, referring to Fig. 10b, in the case of the comparative example (R1), the color difference (△UV) according to the viewing angle at ±60° is about 0.009. On the other hand, in the case of the embodiment (E1), the color difference (△UV) according to the viewing angle at ±60° is about 0.003. In addition, the graph may have a smaller slope from the front to the side than the graph of the comparative example (R1).

[0112] Therefore, the embodiment has a technical effect of significantly reducing the color difference according to the viewing angle by arranging a nano-sized scattering agent around a semiconductor light-emitting element.

[0113]

[0114] Figure 11 shows speckle distribution data, which is the white quality of a display device, depending on whether an example is applied or not.

[0115] Fig. 11 (a) shows a speckle dispersion data of about 1.63 in a display device in internal technology, which has a problem of aggravating the speckle phenomenon.

[0116]

[0117] Meanwhile, Fig. 11 (b) shows non-dispersed scatter data of about 8.75 as speckle scatter data in a display device to which the embodiment is applied, which is a technical effect in which the speckle phenomenon is significantly improved.

[0118] Therefore, the embodiment has a technical effect of preventing product defects by disposing a nano-sized scattering agent surrounding a semiconductor light-emitting element in a display device to make the color and brightness of the display device uniform according to the viewing angle.

[0119]

[0120] According to the embodiment, there is a technical effect that can improve the uniformity of luminance according to the viewing angle within the pixel.

[0121] Additionally, according to the embodiment, there is a technical effect that can improve the brightness at the front side of the pixel.

[0122] For example, the embodiment can improve the brightness of the front surface by disposing a side light control layer between semiconductor light emitting elements within a pixel to absorb some of the light emitted laterally or reflect it toward the front surface of the semiconductor light emitting elements.

[0123] Additionally, according to the embodiment, there is a technical effect capable of preventing a speckle phenomenon in a display device.

[0124] For example, the embodiment can prevent the occurrence of a speckle phenomenon depending on the viewing angle by disposing a nano-sized scattering agent around a semiconductor light-emitting element to scatter light in all directions.

[0125] Although the present invention has been described above with reference to embodiments thereof, it will be readily understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below.

[0126] The embodiment can be adopted in the field of displays that display images or information.

[0127] For example, the display device according to the embodiment may include a digital signage, a digital TV, a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, a tablet PC, an Ultra-Book, a desktop computer, and the like. In addition, the configuration according to the embodiment described in this specification may be applied to a device capable of displaying, even if it is a new product type developed in the future.

[0128] The display device of the embodiment can be applied to outdoor digital signage and indoor digital signage.

Claims

1. Substrate; A plurality of semiconductor light-emitting elements arranged on the substrate; A first light scattering layer arranged to surround the periphery of the plurality of semiconductor light emitting elements; A second light scattering layer disposed on the plurality of semiconductor light emitting elements; and A light control layer positioned on the side surface of the plurality of semiconductor light emitting elements is included; A display device including a semiconductor light-emitting element, wherein the first light-scattering layer includes a nano-sized first light-scattering agent.

2. In paragraph 1, The second light scattering layer includes a second light scattering agent, A display device including a semiconductor light-emitting element, wherein the first light scattering agent is smaller in size than the second light scattering agent.

3. In paragraph 1, It includes solder positioned between the plurality of semiconductor light emitting elements and the substrate, A display device including a semiconductor light emitting element having different shapes, wherein the solder is different from each other.

4. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the light control layer does not vertically overlap with the semiconductor light-emitting element.

5. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the first light-scattering layer is positioned below the upper surface of the semiconductor light-emitting element.

6. In paragraph 1, A display device including a semiconductor light emitting element, wherein the light control layer includes a reflective film.

7. In paragraph 1, A display device including a semiconductor light emitting element, wherein the light control layer includes a black layer.

8. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the semiconductor light-emitting element is connected to the substrate in a flip-chip manner.

9. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the second light-scattering layer is thicker than the first light-scattering layer.

10. In paragraph 1, A display device including a semiconductor light emitting element, wherein the first light scattering agent includes at least one of SiO2, TiO2, and ZrO2.

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