Light-emitting device

Abstract

The present invention relates to a light-emitting device. Disclosed is a light-emitting device (100) comprising: a substrate (110); a plurality of emitters (E1-EN) arranged on the substrate (110) so as to emit light; one or more color crystal layers (122, 124, 126) arranged above the plurality of emitters (E1-EN); and a barrier layer (130) surrounding the color crystal layers (122, 124, 126).

Description

Light-emitting device

[0001] The present invention relates to a light-emitting device.

[0002] Recently, nitride semiconductors have been widely used as base materials for light-emitting devices such as light-emitting diodes. Nitride semiconductors can exhibit a wide range of band gap energies depending on the composition ratio of Group ² elements. Therefore, controlling the composition ratio of elements such as Al, Ga, and In allows for the generation of light of various wavelengths.

[0003] A multiple quantum well structure (MQW) can be used as the structure of the active layer, and the emission wavelength of the light-emitting element can be determined depending on the composition ratio of the nitride semiconductor in the well layer of the multiple quantum well structure.

[0004] Typically, light-emitting diodes can be used in the form of light-emitting diode packages in which light-emitting diode chips are mounted on a substrate such as a printed circuit board (PCB) that includes a wiring layer and an insulating layer.

[0005] A light emitting diode package is a light emitting device that can be used as a display device that displays characters, symbols, images, or videos. The display device can include a plurality of light emitting devices, and can display characters, symbols, images, or videos by controlling light emitted from the plurality of light emitting devices.

[0006] The display device includes a display substrate such as a PCB substrate on which electric circuits are arranged, and a plurality of light-emitting devices can be modularized and arranged on the display substrate.

[0007] The purpose of the present invention is to provide a light-emitting device with improved luminous efficiency.

[0008] A light emitting device (100) according to one embodiment of the present invention comprises a substrate (110), a plurality of emitters (E1 to E) that are arranged on the substrate (110) and emit light. N ) and the plurality of emitters (E1 to EN ) may include at least one color determination layer (122, 124, 126) disposed on top of the color determination layer (122, 124, 126), and a barrier layer (130) surrounding the color determination layer (122, 124, 126).

[0009] In one embodiment, the barrier layer (130) may have at least one hole (H).

[0010] In one embodiment, the color determination layer (122, 124, 126) may be positioned within the hole (H).

[0011] In one embodiment, the barrier layer (130) has a plurality of holes (H), and the plurality of holes (H) can be arranged in a grid pattern.

[0012] In one embodiment, the plurality of emitters (E1 to E N ) may include a first emitter (E1) emitting light of a first wavelength band, a second emitter (E2) emitting light of a second wavelength band, and a third emitter (E3) emitting light of a third wavelength band.

[0013] In one embodiment, the first to third emitters (E1 to E3) generate light in a wavelength band of 350 nm to 500 nm, and the difference in peak wavelengths of light emitted from the first to third emitters (E1 to E3) may be 5 nm or less.

[0014] In one embodiment, the first to third emitters (E1 to E3) may each include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.

[0015] In one embodiment, the well layers of each active layer may comprise the same material.

[0016] In one embodiment, the color decision layer (122, 124, 126) may include a first color decision layer (122) disposed on the first emitter (E1), a second color decision layer (124) disposed on the second emitter (E2), and a third color decision layer (126) disposed on the third emitter (E3).

[0017] In one embodiment, at least one of the first to third color determination layers (122, 124, 126) may include a wavelength conversion material.

[0018] In one embodiment, at least one of the first to third color determination layers (122, 124, 126) may be a transparent light-transmitting layer.

[0019] In one embodiment, the upper surface of the color determination layer (122, 124, 126) may coincide with the adjacent upper surface of the barrier layer (130).

[0020] In one embodiment, the width (W1) of the barrier layer (130) may be smaller than the horizontal width (W2) of the adjacent color determination layer (122, 124, 126).

[0021] In one embodiment, the barrier layer (130) may include a first barrier layer (132) and a second barrier layer (134) disposed below the first barrier layer (132) and having a vertical height (H12) greater than the vertical height (H11) of the first barrier layer (132).

[0022] In one embodiment, the width (W12) of the second barrier layer (134) may be narrower than the width (W11) of the first barrier layer (132).

[0023] In one embodiment, the first barrier layer (132) may include the same material as the second barrier layer (134).

[0024] In one embodiment, the barrier layer (130) may further include a third barrier layer (136) disposed between the first barrier layer (132) and the color determination layer (122, 124, 126).

[0025] In one embodiment, the third barrier layer (136) may be a metal reflective layer.

[0026] In one embodiment, the plurality of emitters (E1 to E N ) may further include a buffer layer (140) disposed between the color determination layers (122, 124, 126).

[0027] In one embodiment, a portion of the buffer layer (140) may be positioned between the color determination layer (122, 124, 126) and the barrier layer (130).

[0028] In one embodiment, the device further includes an ohmic electrode (150) disposed on one surface of the first to third emitters (E1 to E3) facing the substrate (110), and the shape of each ohmic electrode (150) may be the same or similar.

[0029] A light emitting device (100) according to one embodiment of the present invention comprises a substrate (110), a plurality of lower emitters (D1 to D) arranged on the substrate (110) and emitting light. N ) and the lower emitters (D1~D) N ) and at least one upper emitter (U1 to U) emitting light. M ), the plurality of lower emitters (D1 to D N ) may include at least one color determination layer (122, 124, 126) disposed on top of the color determination layer (122, 124, 126), and a barrier layer (130) surrounding the color determination layer (122, 124, 126).

[0030] In one embodiment, the upper emitter (U1 to U M ) is the plurality of lower emitters (D1 to D N ) can emit light of a wavelength band having a different peak wavelength.

[0031] The present invention can provide a light-emitting device with improved light-emitting efficiency.

[0032] Fig. 1 is a cross-sectional view showing a light emitting device according to one embodiment of the present invention.

[0033] Figure 2 is a plan view showing a part of the configuration of Figure 1.

[0034] Fig. 3 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

[0035] Fig. 4 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

[0036] Fig. 5 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

[0037] Fig. 6 is a cross-sectional view showing a light emitting device according to another embodiment of the present invention.

[0038] Fig. 7 is a plan view showing a light emitting device according to another embodiment of the present invention.

[0039] Fig. 8 is a cross-sectional view taken along the II' direction of Fig. 7.

[0040] Fig. 9 is a plan view showing a light emitting device according to another embodiment of the present invention.

[0041] Fig. 10a is a cross-sectional view taken along the line Ⅱ-Ⅱ' of Fig. 9, and Fig. 10b is a cross-sectional view taken along the line Ⅲ-Ⅲ' of Fig. 9.

[0042] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0043] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0044] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in a reverse order from the described sequence. Furthermore, like reference numerals designate like elements.

[0045] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to physical, electrical, and / or fluidic connections, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0046] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0047] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0048] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0049] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0050] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally, may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0051] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0052] FIG. 1 is a cross-sectional view showing a light-emitting device (100) according to a first embodiment of the present invention, wherein the light-emitting device (100) comprises a substrate (110), a plurality of emitters (E1 to E) arranged on the substrate (110) to emit light. N ) and the plurality of emitters (E1 to E N ) may include at least one color determination layer (122, 124, 126) disposed on top of the color determination layer (122, 124, 126), and a barrier layer (130) surrounding the color determination layer (122, 124, 126).

[0053] The above substrate (110) has a plurality of emitters (E1 to E N ) can be configured in various ways. The substrate (110) has emitters (E1 to E) on its upper surface. N ) is a substrate on which the emitter (E1~E) is mounted, such as a circuit board or lead frame, flexible substrate, transparent substrate, etc. N ) is not limited to a specific type, as long as it can support it.

[0054] For example, the substrate (110) may be composed of one of the materials that can be supported, such as a PCB (Printed Circuit Board), a TFT, or a transparent substrate. The PCB may be, for example, an FR4 PCB having excellent properties such as high strength, flame retardancy, and chemical resistance. Alternatively, it may be a Metal PCB (Metal Printed Circuit Board) having excellent heat dissipation performance and good thermal conductivity. More specifically, it may be a PCB including Cu, Zn, Au, Ni, Al, Mg, Cd, Be, W, Mo, Si, and Fe or an alloy of at least one of these as a base metal. However, the present invention is not limited thereto, and various PCBs may be used depending on the product characteristics.

[0055] The above substrate (110) has an insulating layer and an emitter (E1 to E N ) and wiring for electrical connection, and emitters (E1~E N ) may include circuits for supplying and driving an electrical source, such as current or voltage.

[0056] On the upper surface of the above substrate (110) emitters (E1 to E N ) can be formed to mount the electrode pad, and a pad for mounting on another substrate (e.g., a display substrate) can be formed on the lower surface of the substrate (110).

[0057] The above substrate (110) may be formed in a single-layer or multi-layer structure, and may be formed in various thicknesses as needed. The above substrate (110) may be a display substrate constituting a display device, or a base substrate to be mounted on a display substrate.

[0058] A plurality of emitters (E1 to E) are provided on one surface of the above substrate (110). N ) can be arranged. The above plurality of emitters (E1 to E N) can be connected to the electrical circuit of the substrate (110) by a conductive material or an adhesive material. For example, the plurality of emitters (E1 to E N ) can be connected to the electric circuit of the substrate (110) by soldering.

[0059] The above multiple emitters (E1 to E N ) may be a light-emitting structure that is arranged on the substrate (110) and emits light. Fig. 1 illustrates a case where the light-emitting device (100) includes three emitters (E1 to E3), but the present invention is not limited thereto, and a greater number of emitters (E1 to E N ) are also possible.

[0060] The above multiple emitters (E1 to E N ) can be installed spaced apart from each other and arranged in various patterns such as a grid pattern, a row arrangement, etc. The plurality of emitters (E1 to E N ) can be driven independently of each other and emit light.

[0061] The above emitters (E1~E N ) is a light-emitting structure and may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

[0062] The above first conductive semiconductor layer is a semiconductor layer disposed on one side and may additionally include a buffer layer. The buffer layer may include a nitride or phosphide semiconductor such as GaN or GaAs, and may be grown using MOCVD.

[0063] The first conductive semiconductor layer may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be arranged on a growth substrate using a method such as MOCVD, MBE, or HVPE. In addition, the first conductive semiconductor layer may be doped to be n-type by including one or more impurities such as Si, C, Ge, Sn, Te, or Pb. However, the present invention is not limited thereto, and the first conductive semiconductor layer may also be doped to be of the opposite conductive type by including a p-type dopant.

[0064] Furthermore, the first conductive semiconductor layer may be formed as a single layer or multiple layers. For example, the first conductive semiconductor layer may be formed of a first sub-conductive semiconductor layer and a second sub-conductive semiconductor layer on top of the first sub-conductive semiconductor layer.

[0065] The first sub-conductivity semiconductor layer and the second sub-conductivity semiconductor layer may be doped at different concentrations and formed at different process temperatures. When the first conductive semiconductor layer is formed of multiple layers, the first conductive semiconductor layer may include a superlattice layer. Furthermore, the first conductive semiconductor layer may additionally include a contact layer, a modulation doping layer, an electron injection layer, etc.

[0066] The above active layer is a light-emitting layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using a technique such as MOCVD, MBE, or HVPE.

[0067] Additionally, the active layer may include a quantum well structure (QW) including at least two barrier layers and at least one well layer, and further, may include a multiple quantum well structure (MQW) including a plurality of barrier layers and a plurality of well layers.

[0068] The wavelength of light emitted from the above active layer can be controlled by controlling the composition ratio of the materials constituting the well layer. In this case, the well layer may commonly contain the same element and may include In.

[0069] The well layer is located between the barrier layers, and the band gap energy of the well layer may be smaller than the band gap energy of the barrier layer. The well layer may include or be formed of InxGa(1-x)N or InxGa(1-x)P (0<x<1), and the wavelength of the emitted light may be controlled depending on the composition ratio (x) of In. The barrier layer and the well layer are alternately stacked, and it is preferable that they are alternately stacked at least twice. Adjacent barrier layers and well layers may form a pair.

[0070] or the above plurality of emitters (E1 to E N ) may not contain indium.

[0071] Each emitter (E1~E N ) The type or composition of the material constituting the well layer may be the same or different.

[0072] The second conductive semiconductor layer may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using a technique such as MOCVD, MBE, or HVPE. The second conductive semiconductor layer may be doped with a conductivity type opposite to that of the first conductive semiconductor layer. For example, the second conductive semiconductor layer (126) may be doped to be p-type by including an impurity such as Mg.

[0073] The second conductive semiconductor layer may be formed as a single layer having a composition similar to p-GaN, but is not limited thereto, and may further include an AlGaN layer therein.

[0074] The above multiple emitters (E1 to E N ) The doping concentration of each first conductive semiconductor layer may be the same or similar to each other. The plurality of emitters (E1 to E N ) The difference between the doping concentrations of each first-conduction semiconductor layer may be within 20%. The plurality of emitters (E1 to E N ) The doping concentration of each second conductive semiconductor layer may be the same or similar to each other. The plurality of emitters (E1 to E N ) The difference between the doping concentrations of each second-challenge semiconductor layer may be within 20%.

[0075] The above multiple emitters (E1 to E N ) can emit light with a peak wavelength whose difference in peak wavelength is within 5 nm. As another example, the plurality of emitters (E1 to E N ) can emit light of different peak wavelengths.

[0076] Referring to FIG. 1, a first emitter (E1) can emit light having a first peak wavelength, a second emitter (E2) can emit light having a second peak wavelength, and a third emitter (E3) can emit light having a third peak wavelength. At this time, the first to third peak wavelengths can be the same or different.

[0077] For example, the first to third emitters (E1 to E3) can emit light having a wavelength band between 350 nm and 500 nm. In this case, the first to third emitters (E1 to E3) can emit blue light or ultraviolet light.

[0078] The above multiple emitters (E1 to E N ) may be less than 5 nm in peak wavelength. The plurality of emitters (E1 to E N ) can have a difference in the material content of indium included in the active layer of less than 5%.

[0079] Meanwhile, referring to FIG. 2, the plurality of emitters (E1 to E N ) can be formed by a mesa (MS) formed by etching a portion of the second conductive semiconductor layer so that the upper surface of the first conductive semiconductor layer is exposed. Through the mesa (MS) structure, each emitter (E1 to E N ) can be operated in isolation.

[0080] The above light emitting device (100) comprises a plurality of emitters (E1 to E N ) may further include an ohmic electrode (150) arranged on each side. The ohmic electrode (150) may be a transparent electrode such as ITO, IZO, etc. In addition, the ohmic electrode (150) may be composed of a light-reflective metal material. Here, the side on which the ohmic electrode (150) is arranged is the emitter (E1 to E N ) may be a surface facing the substrate (110). For example, the emitter (E1~E N ) forms a surface facing the substrate (110), the ohmic electrode (150) may be placed on one surface of the second conductive semiconductor layer. Or, the emitter (E1~E N ) forms one surface facing the substrate (110), the ohmic electrode (150) may be placed on one surface of the first conductive semiconductor layer.

[0081] Each emitter (E1~E N ) may be formed of the same material. In addition, the shape of each ohmic electrode (150) may be the same or similar. In addition, the deviation in the area of ​​each ohmic electrode (150) may be in the range of 90 to 110%. Through this, each emitter (E1 to E N ) can prevent the occurrence of a difference in luminous efficiency by reducing the difference in resistivity of the electrodes. Each ohmic electrode (150) can be arranged spaced apart from each other, and the emitters (E1 to E N ) can be arranged to correspond to the array form of emitters (E1~E N) and the area where the emitters (E1~E) are placed N ) can greatly increase the difference in transmittance in areas where no layers are placed.

[0082] In addition, the light emitting device (100) may further include a protective layer (160) covering the ohmic electrode (150). The protective layer (160) may include at least one of materials such as SiO2, TiO2, resin, silicone, polyimide, and epoxy mold compound (EMC).

[0083] The above protective layer (160) may be a distributed Bragg reflector (DBR).

[0084] The above protective layer (160) may include a plurality of openings (OP) that expose a portion of the ohmic electrode (150). When the protective layer (160) is placed before the ohmic electrode (150), the openings (OP) of the protective layer (160) may be formed at the emitter (E1 to E N ) can also expose the semiconductor layer. Through the above opening (OP), an external electrical source can be connected to multiple emitters (E1 to E N ) can be supplied. Emitters (E1~E N ) is positioned corresponding to the emitter (E1~E N ) can be placed so as to overlap the center of the emitter (E1~E) exposed by the opening (OP). N ) semiconductor layer region is the emitter (E1~E N ) may overlap with the center of the ohmic electrode (150). Or, the opening (OP) of the protective layer (160) may overlap with the center of the ohmic electrode (150). Therefore, uniform current injection becomes possible, and the emitter (E1 to E N ) can focus and emit light to the central region.

[0085] The above protective layer (160) may have a single layer structure, but is not limited thereto, and may include a plurality of sub-protective layers (162, 164), as illustrated in FIG. 1. For example, the protective layer (160) may include a first sub-protective layer (162) covering the ohmic electrode (150) and a second sub-protective layer (164) disposed on the first sub-protective layer (162).

[0086] The first sub-protective layer (162) may include at least one of SiO2, TiO2, and a distributed Bragg reflector, and the second sub-protective layer (164) may be a coating layer, and may be a polyimide (PI) or silsesquioxane-based (SSQ-based) coating layer.

[0087] The ohmic electrode (150) can be exposed through the opening (OP) of the first sub-protective layer (162) and the second sub-protective layer (164). In addition, a portion of the upper surface of the first conductive semiconductor layer etched by the mesa (MS) can be exposed through the opening (OP) of the first sub-protective layer (162) and the second sub-protective layer (164).

[0088] At this time, the light emitting device (100) has emitters (E1~E N ) may include first and second electrode pads (170, 180) electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively.

[0089] The above second electrode pad (170) can be electrically connected to the second conductive semiconductor layer through the ohmic electrode (150) exposed through the opening (OP).

[0090] In the case of Fig. 1, the second electrode pad (170) is each emitter (E1 to E N ) are individually provided, but the present invention is not limited thereto. The second electrode pad (170) is formed as a single member and has a plurality of emitters (E1 to E N ) can also be electrically connected.

[0091] The first electrode pad (180) can be electrically connected to the first conductive semiconductor layer exposed through the opening (OP) of the protective layer (160). The first electrode pad (180) can be electrically connected to each emitter (E1 to E N ) can be individually provided for. Alternatively, the first electrode pad (180) is formed as a single member and a plurality of emitters (E1 to E N ) can also be electrically connected.

[0092] Accordingly, the above plurality of emitters (E1 to E N ) At least one of the first conductive semiconductor layer and the second conductive semiconductor layer can be connected to each other.

[0093] The above light emitting device (100) comprises the emitters (E1 to E N ) may include a first electrode pad (180) connecting the emitters (E1 to E N ) can be positioned opposite to the ohmic electrode (150). Referring to Fig. 1, when viewed in cross section, the horizontal distance of the first electrode pad (180) can be greater than the horizontal distance of one ohmic electrode (150). The first electrode pad (180) can be positioned opposite to one emitter (E1~E N ) can be greater than the horizontal distance of the emitter (E1~E). Therefore, it can be stably N ) can be connected.

[0094] As seen from the top, the first electrode pad (180) is the emitter (E1~E N ) and emitters (E1~E N ) may be formed to pass between the emitters (E1~E). Or, in another form, when viewed from the top, the first electrode pad (180) may be formed to pass between the emitters (E1~E N ) may be formed to overlap with the area between the first electrode pads (180), and the first electrode pad (180) may surround the opening. The first electrode pad (180) may be in the form of a mesh.

[0095] The above first electrode pad (180) is an emitter (E1~E N ) may include a main region connected to the substrate (110) and an extension region extending from the main region. Accordingly, the first electrode pad (180) may include a bend between the main region and the extension region. Accordingly, the emitter (E1 to E N ) can be electrically connected to the electrodes of the substrate (110) even if the main area connected to the substrate (110) is separated from the substrate (110).

[0096] The above emitters (E1~E N ) can transmit through the first electrode pad (180), and the light transmitted through the first electrode pad (180) can be incident on the color determination layer (122, 124, 126) described later.

[0097] The first and second electrode pads (170, 180) may cover at least a portion of the protective layer (160). The first and second electrode pads (170, 180) may be configured to receive an electrical source supplied from an external source and transmit the electrical source to a plurality of emitters (E1 to E1). N ) can transmit electrical sources.

[0098] The above multiple emitters (E1 to E N ) can each have a band gap. The plurality of emitters (E1 to E N ) can form one pixel (PX) in a display device.

[0099] The above color decision layer (122, 124, 126) comprises a plurality of emitters (E1 to E N ) can be arranged on the upper side. The color determination layer (122, 124, 126) can be provided in one or more numbers. Specifically, the color determination layer (122, 124, 126) can be provided in the plurality of emitters (E1 to E N ) can be equipped with the same number of emitters (E1 to E). At this time, each color decision layer (122, 124, 126) has a lower emitter (E1 to E N ) can correspond to each emitter (E1~EN ) can be emitted to the outside after passing through the corresponding upper color determination layer (122, 124, 126).

[0100] When the color determination layers (122, 124, 126) are provided in multiple numbers, at least one of the color determination layers (122, 124, 126) may include a wavelength conversion material. The wavelength conversion material may have various configurations, such as fluorescent particles or quantum dots. The size of the wavelength conversion material may be 10 μm or less, but is not limited thereto, and may have a size of 10 μm or more in consideration of light conversion efficiency.

[0101] The above color determination layers (122, 124, 126) can be arranged horizontally spaced apart from each other.

[0102] Light passing through different color decision layers (122, 124, 126) may have different peak wavelengths.

[0103] At least one of the plurality of color determination layers (122, 124, 126) may be a transparent light-transmitting layer. That is, at least one of the plurality of color determination layers (122, 124, 126) may be a transparent layer that does not include a wavelength conversion material. Light passing through the color determination layer (122, 124, 126) that does not include a wavelength conversion material may be emitted to the outside without any change in wavelength before and after passing through.

[0104] For example, referring to FIG. 1, the color decision layers (122, 124, 126) may include a first color decision layer (122) disposed on the first emitter (E1), a second color decision layer (124) disposed on the second emitter (E2), and a third color decision layer (126) disposed on the third emitter (E3).

[0105] Light emitted from the first emitter (E1) can pass through the first color decision layer (122) and be emitted to the outside. Light emitted from the second emitter (E2) can pass through the second color decision layer (124) and be emitted to the outside. Light emitted from the third emitter (E3) can pass through the third color decision layer (126) and be emitted to the outside.

[0106] At least one of the first to third color determination layers (122, 124, 126) may include a wavelength conversion material. For example, the first to third color determination layers (122, 124, 126) may include at least one identical material. As another example, at least one of the first to third color determination layers (122, 124, 126) may include at least one different material from the other color determination layers (122, 124, 126).

[0107] In addition, at least one of the first to third color determination layers (122, 124, 126) may be a transparent light-transmitting layer. For example, the first and second color determination layers (122, 124) may include a wavelength conversion material, and the third color determination layer (126) may be a transparent light-transmitting layer that does not include a wavelength conversion material. In this case, the wavelength conversion materials included in the first and second color determination layers (122, 124) may be different from or the same as each other.

[0108] Since the first color decision layer (122) through which light emitted from the first emitter (E1) passes includes a wavelength conversion material, the number of peaks of light passing through the first color decision layer (122) may be greater than the number of peaks of light emitted from the first emitter (E1). Similarly, since the second color decision layer (124) through which light emitted from the second emitter (E2) passes includes a wavelength conversion material, the number of peaks of light passing through the second color decision layer (124) may be greater than the number of peaks of light emitted from the second emitter (E2). On the other hand, since the third color decision layer (126) through which the light emitted from the third emitter (E3) passes does not include a wavelength conversion material, the number of peaks of the light emitted from the third emitter (E3) may be the same as the number of peaks of the light passing through the third color decision layer (126).

[0109] Each color decision layer (122, 124, 126) may have a width (W2) in the horizontal direction. The width (W2) of the color decision layer (122, 124, 126) may be equal to or different from the width of the emitter (E1 to E3) corresponding to the lower side. For example, the width (W2) of the color decision layer (122, 124, 126) may be greater than the width of the emitter (E1 to E3) corresponding to the lower side. Since the barrier layer (130) described below is positioned between the color decision layers (122, 124, 126), the width (W2) of the color decision layer (122, 124, 126) can prevent light from leaking by the barrier layer (130) even if the width of the emitter (E1 to E3) corresponding to the lower side is different.

[0110] The above barrier layer (130) is a side wall structure surrounding the color determination layer (122, 124, 126) and can have various configurations.

[0111] The above barrier layer (130) is a side wall structure placed between adjacent color decision layers (122, 124, 126), and can prevent light emitted from the side of each color decision layer (122, 124, 126) from affecting other adjacent color decision layers (122, 124, 126).

[0112] The upper surface of the color determination layer (122, 124, 126) may coincide with the adjacent upper surface of the barrier layer (130).

[0113] The width (W1) of the above barrier layer (130) may be smaller than the horizontal width (W2) of the adjacent color determination layer (122, 124, 126).

[0114] At this time, the width (W1) of the barrier layer (130) may be the width of the barrier layer (130) placed between the color determination layers (122, 124, 126) constituting one pixel (PX).

[0115] Referring to FIG. 8, the width (W3) of the barrier layer (130) disposed between different pixels (PX) may be greater than W1. The W3 may also be greater than the horizontal width (W2) of the color determination layer (122, 124, 126).

[0116] Meanwhile, the barrier layer (130) may include at least one of materials such as resin, silicone, polyimide, and black matrix. In addition, the barrier layer (130) may include a light-blocking material.

[0117] The above barrier layer (130) may be arranged to surround the color determination layer (122, 124, 126). The barrier layer (130) may be configured in a sheet shape including at least one hole (H). In this case, the color determination layer (122, 124, 126) may be positioned within the hole (H) of the barrier layer (130).

[0118] For example, the barrier layer (130) may have a plurality of holes (H), as illustrated in FIG. 7. The plurality of holes (H) may be arranged in various patterns. For example, the plurality of holes (H) may be arranged in a grid pattern of an N×M matrix (N and M are natural numbers greater than or equal to 1). The spacing between adjacent holes (H) may be configured in various ways.

[0119] As the above barrier layer (130) has a plurality of holes (H), the barrier layer (130) can be formed in a mesh shape or net shape when viewed from a plane.

[0120] Color determination layers (122, 124, 126) can be placed within the holes (H) corresponding to each hole (H) of the above barrier layer (130).

[0121] The total vertical height (H1) of the above barrier layer (130) may be equal to or smaller than the vertical height of the color determination layer (122, 124, 126).

[0122] The above barrier layer (130) may be composed of a single layer, but as illustrated in FIG. 1, it may have a multi-layer structure, including a first barrier layer (132) and a second barrier layer (134) disposed below the first barrier layer (132). Although not illustrated, the barrier layer (130) may further include an additional barrier layer below the second barrier layer (134).

[0123] The first barrier layer (132) may be configured identically or similarly to the above-described barrier layer (130). The vertical height (H11) of the first barrier layer (132) may be lower than the height of the color determination layer (122, 124, 126).

[0124] The second barrier layer (134) may have a vertical height (H12) greater than the vertical height (H11) of the first barrier layer (132).

[0125] FIGS. 1 to 4 illustrate examples in which the horizontal width of the second barrier layer (134) and the width of the first barrier layer (132) are the same as W1, but the present invention is not limited thereto. For example, referring to FIG. 5, the width (W12) of the second barrier layer (134) may be narrower than the width (W11) of the first barrier layer (132).

[0126] The second barrier layer (134) may include at least one of materials such as resin, silicone, polyimide, and epoxy mold compound (EMC). In addition, the first barrier layer (132) may include the same material as the second barrier layer (134).

[0127] Meanwhile, the first barrier layer (132) and the second barrier layer (134) may have different light transmittances. In addition, the first barrier layer (132) and the second barrier layer (134) may have different melting points. In addition, the first barrier layer (132) and the second barrier layer (134) may have different thermal conductivities. Accordingly, the thermal stress applied to the first barrier layer (132) and the second barrier layer (134) due to heat generation originating from inside or outside the light-emitting device (100) can be reduced.

[0128] As another example, referring to FIG. 4, the barrier layer (130) may further include a third barrier layer (136) disposed between the first barrier layer (132) and the color determination layer (122, 124, 126).

[0129] The third barrier layer (136) can cover at least one side of the first barrier layer (132) and the second barrier layer (134).

[0130] The third barrier layer (136) may include at least one of materials such as SiO2, TiO2, resin, silicone, polyimide, epoxy mold compound (EMC), and metal.

[0131] Additionally, the third barrier layer (136) may be a distributed Bragg reflector (DBR). For example, the third barrier layer (136) may be a metal reflective layer.

[0132] The third barrier layer (136) may have a different thermal conductivity from the first barrier layer (132) and the second barrier layer (134). For example, the thermal conductivity of the third barrier layer (136) may be higher than the thermal conductivity of the first barrier layer (132) and the second barrier layer (134).

[0133] As illustrated in FIG. 4, the cross-sectional width (W13) of the third barrier layer (136) may be narrower than the widths (W11, W12) of the first barrier layer (132) and the second barrier layer (134).

[0134] The third barrier layer (136) may extend from the side of the first barrier layer (132) to the side of the second barrier layer (134). The first barrier layer (132) and the second barrier layer (134) are covered by the third barrier layer (136), thereby preventing the edges of the first barrier layer (132) and the second barrier layer (134) from being peeled off.

[0135] The above light emitting device (100) comprises a plurality of emitters (E1 to E N ) may further include a buffer layer (140) disposed between the color determination layers (122, 124, 126).

[0136] The above buffer layer (140) comprises the plurality of emitters (E1 to E N ) can cover the upper surface of the color determination layer (122, 124, 126) and the lower surface of the color determination layer (122, 124, 126).

[0137] In addition, as shown in FIG. 5, a portion of the buffer layer (140) may be positioned between the color determination layers (122, 124, 126) and the barrier layer (130). That is, a portion of the buffer layer (140) may extend to the region between the color determination layers (122, 124, 126) and the barrier layer (130). Accordingly, the emitters (E1 to E N ) and the materials positioned thereon can be firmly bonded to each other.

[0138] The above buffer layer (140) may include at least one of materials such as resin, silicone, and polyimide.

[0139] Meanwhile, the light emitting device (100) may further include a supporter (200) disposed on the color determination layer (122, 124, 126). At this time, the buffer layer (140) may extend to one side of the supporter (200) and cover at least a portion of the supporter (200). The supporter (200) is not an essential component and may be optionally added.

[0140] In addition, the light-emitting device (100) may further include a light-transmitting layer (200) disposed on the upper portion. The light-transmitting layer (300) may be formed of a light-transmitting material. For example, the light-transmitting layer (300) may be any material that can transmit light, such as resin, silicone, polyimide, glass, or sapphire.

[0141] Specifically, FIG. 1 is a light emitting device (100) according to a first embodiment of the present invention, wherein the barrier layer (130) may include first and second barrier layers (132, 134). In FIG. 1, the second electrode pad (170) may be provided for each emitter (E1 to E3). Referring to FIG. 2, the first electrode pad (180) may be provided as a common electrode for the emitters (E1 to E3). It is obvious that the number, shape, and arrangement of the first and second electrode pads (170, 180) may be variously modified.

[0142] FIG. 3 is a modified example of FIG. 1, and may be configured identically or similarly to the first embodiment, except that each emitter (E1 to E3) has first and second electrode pads (170, 180), respectively.

[0143] FIG. 4 is a light emitting device (100) according to a second embodiment of the present invention, which may be configured identically or similarly to the first embodiment except that the barrier layer (130) further includes a third barrier layer (136).

[0144] FIG. 5 is a light emitting device (100) according to a third embodiment of the present invention, which may be configured identically or similarly to the first and second embodiments except that the barrier layer (130) further includes a third barrier layer (136) and covers the first barrier layer (132) and the second barrier layer (134), and the buffer layer (140) extends between the barrier layer (130) and the color determination layers (122, 124, 126).

[0145] In addition, as illustrated in FIG. 5, the color determination layers (122, 124, 126) may have inclined surfaces formed on both sides. Accordingly, each color determination layer (122, 124, 126) may have a trapezoidal shape in cross section. The shape of the color determination layers (122, 124, 126) may be equally applied to the light emitting device (100) according to the first and second embodiments.

[0146] Meanwhile, FIGS. 1 to 5 illustrate an example in which a light emitting device (100) includes three emitters (E1 to E3), but the present invention is not limited thereto, and may include a greater number of emitters (E1 to EN), as illustrated in FIG. 8.

[0147] In addition, as illustrated in FIG. 6, when three emitters (E1 to E3) and color decision layers (122, 124, 126) constitute one pixel (PX), the light emitting device (100) may include a plurality of pixels (PX) arranged on a substrate (110).

[0148] Specifically, FIG. 8 illustrates an example of a light-emitting device (100) according to a fourth embodiment, which includes four pixels (PX) when three emitters (E1 to E3) and color decision layers (122, 124, 126) constitute one pixel (PX). In the light-emitting device (100) of FIG. 8, as illustrated in FIG. 7, 12 holes (H) are arranged in a grid shape in the first barrier layer (132), and a color decision layer (122, 124, 126) corresponding to each hole (H) can be arranged.

[0149] Meanwhile, in FIG. 8, each emitter (E1 to E3) may be placed on a growth substrate (190), and a protrusion (190) may be formed on one surface of the growth substrate (190) facing the emitters (E1 to E3). The protrusion (190) may increase the extraction efficiency of light emitted from the emitters (E1 to E3) through a protruding structure.

[0150] The light emitted from the first emitter (E1) passes through the first color decision layer (122), and the passing light (L1) that has passed through the first color decision layer (122) can be emitted to the outside. The passing light (L1) may be a mixed light of the light emitted from the first emitter (E1) and the light excited through the first color decision layer (122). The passing light (L1) may have a peak wavelength greater than that of the light emitted from the first emitter (E1).

[0151] The light emitted from the second emitter (E2) passes through the second color decision layer (124), and the passing light (L2) that has passed through the second color decision layer (124) can be emitted to the outside. The passing light (L2) may be a mixed light of the light emitted from the second emitter (E2) and the light excited through the second color decision layer (124). The passing light (L2) may have a peak wavelength greater than that of the light emitted from the second emitter (E2).

[0152] The light emitted from the third emitter (E3) passes through the third color decision layer (126), and the passing light (L3) that has passed through the third color decision layer (126) can be emitted to the outside. The passing light (L3) may be a mixed light of the light emitted from the third emitter (E3) and the light excited through the third color decision layer (126). When the third color decision layer (126) is a transparent light-transmitting layer, the passing light (L3) may be the same as the light emitted from the third emitter (E3).

[0153] Meanwhile, FIGS. 9 to 10b are light emitting devices (100) according to another embodiment of the present invention, including a substrate (110), a plurality of lower emitters (D1 to D) arranged on the substrate (110) to emit light. N ) and the lower emitters (D1~D) N ) at least one upper emitter (U1 to U) positioned above and emitting light M ), the plurality of lower emitters (D1 to D N ) may include at least one color determination layer (F) disposed on the upper portion, and a barrier layer (130) surrounding the color determination layer (F).

[0154] The above substrate (110) may be configured identically or similarly to the substrate (110) of the above-described light-emitting device (100), so redundant descriptions are omitted.

[0155] The above multiple lower emitters (D1 to D) N) are arranged on the substrate (110) and are configured to emit light, and the above-described emitters (E1 to E N ) may be configured identically or similarly. For example, as shown in FIG. 10a, the light emitting device (100) may include two first and second lower emitters (D1, D2).

[0156] The first lower emitter (D1) can emit light having a first peak wavelength, and the second lower emitter (D2) can emit light having a second peak wavelength. At this time, the first peak wavelength and the second peak wavelength may be the same or different from each other.

[0157] For example, the first and second lower emitters (D1, D2) can emit light having a wavelength band between 350 nm and 500 nm. At this time, the first to third emitters (E1 to E3) can emit blue light or ultraviolet light.

[0158] The difference in peak wavelength of light emitted from the first and second lower emitters (D1, D2) may be 5 nm or less. The lower emitters (D1, D2) may have a difference in the material content of indium included in the active layer of 5% or less.

[0159] Referring to Fig. 10a, the lower emitters (D1, D2) may be formed by a mesa (MS) formed by etching a portion of the second conductive semiconductor layer so that the upper surface of the first conductive semiconductor layer is exposed. Through the mesa (MS) structure, each lower emitter (D1, D2) may be driven in isolation.

[0160] The upper emitter (U1~U) M ) is the lower emitter (D1~D N ) is placed on the top and emits light, and the lower emitter (D1~D) N ) can be configured identically or similarly to the lower emitter (D1 to D). That is, the light emitting device (100) of FIGS. 9 to 10b has a lower emitter (D1 to D N) upper emitter (U1~U) emitting light at the top M ) is different from the light emitting device (100) described in FIGS. 1 to 8 in that it is arranged.

[0161] For example, referring to FIG. 10A, the light emitting device (100) may include one upper emitter (U1) positioned above the first lower emitter (D1). The upper emitter (U1) is a light emitting structure that emits light having a specific peak wavelength, and the lower emitters (D1 to D N ) can be configured identically or similarly to the upper emitter (U1). The peak wavelength of the light emitted from the upper emitter (U1) is equal to or greater than the peak wavelength of the light emitted from the lower emitter (D1~D N ) may be different from the peak wavelength of light emitted from the upper emitter (U1). For example, the upper emitter (U1) may emit green light.

[0162] Fig. 10a illustrates an example in which the light emitting device (100) includes one upper emitter (U1), but the present invention is not limited thereto. The light emitting device (100) may include a plurality of upper emitters (U1 to U1). M ), each upper emitter (U1 to U M ) lower emitter corresponding to the lower part (D1~D) N ) can be placed.

[0163] The above light emitting device (100) comprises the lower emitter (D1 to D N ) and upper emitter (U1~U M ) may further include an ohmic electrode (150) arranged on each side. The ohmic electrode (150) may be a transparent electrode such as ITO, IZO, etc. In addition, the ohmic electrode (150) may be composed of a light-reflective metal material. Here, the side on which the ohmic electrode (150) is arranged may be the lower and upper emitters (D1 to D N, U1~U M ) may be a surface facing the substrate (110).

[0164] At this time, the light emitting device (100) has a lower emitter (D1~DN ) and upper emitter (U1~U M ) may further include a buffer layer (140) positioned between the lower emitters (D1 to D). In addition, the light emitting device (100) may further include a buffer layer (140) positioned between the lower emitters (D1 to D N ) may further include a protective layer (160) covering the ohmic electrode (150).

[0165] The above buffer layer (140) is the upper emitter (U1~U M ) may be provided with an opening exposing the ohmic electrode (150). Each opening of the buffer layer (140) may be provided with an upper emitter (U1 to U M ) can be arranged with a first electrode (172) and a second electrode (182) connected to the ohmic electrode (150).

[0166] The above protective layer (160) is the lower emitter (D1~D N ) may be provided with an opening exposing the ohmic electrode (150). The lower emitter (D1 to D N ) are provided in multiple numbers, the openings may also be provided in multiple numbers in a corresponding number. Each opening of the protective layer (160) may have a lower emitter (D1 to D N ) can be arranged with a first electrode (172) and a second electrode (182) connected to the ohmic electrode (150).

[0167] Referring to FIGS. 9 to 10b, the first electrode pad (180) and the second electrode pad (170) cover at least a portion of the protective layer (160) and can be electrically connected to the first and second electrodes (172, 182) through openings provided in the protective layer (160).

[0168] Figure 9 shows that the second electrode pad (170) is connected to each upper and lower emitter (D1 to D N , U1~U M ) are provided separately, and the first electrode pad (180) is provided as a common electrode, but the present invention is not limited thereto.

[0169] The above color decision layer (F) comprises a plurality of lower emitters (D1 to D N ) can be configured to be identical or similar to the color determination layers (122, 124, 126) of FIGS. 1 to 8, with the configuration being arranged on the upper side.

[0170] The above barrier layer (130) is configured to surround the color determination layer (F) and may be configured identically or similarly to the barrier layer (130) of FIGS. 1 to 8. The barrier layer (130) may be spaced apart from or in close contact with the color determination layer (F).

[0171] The above lower emitters (D1~D) N ) light emitted from at least one of the upper emitters (U1 to U M ) can be emitted through the lower emitter (D1~D). In addition, the lower emitter (D1~D N ) can be emitted through the color determination layer (F).

[0172] Lower emitters (D1 to D) installed corresponding to the lower part of the above color decision layer (F) N ) can excite the color determination layer (F) to generate excitation light.

[0173] Specifically, the light emitting device (100) of FIGS. 9 to 10b may include two first and second lower emitters (D1, D2), an upper emitter (U1) disposed above the first lower emitter (D1), and a color determination layer (F) disposed above the second lower emitter (D2).

[0174] Light (L1) emitted from the first lower emitter (D1) can pass through the upper emitter (U1) and be emitted to the outside. At this time, the L1 can be blue light or ultraviolet light.

[0175] Light (L2) emitted from the upper emitter (U1) can be emitted as is to the outside. In this case, L2 may be green light.

[0176] Light (L3) emitted from the second lower emitter (D2) can pass through the color determination layer (F) and be emitted to the outside. At this time, the L3 can be blue light or ultraviolet light.

[0177] The excitation light (L4) may be emitted from the color determination layer (F) by the light (L3) emitted from the second lower emitter (D2). Light mixed with L3 and L4 may be emitted through the color determination layer (F). At this time, the color determination layer (F) may include a red wavelength conversion material that is excited by the light (L3) emitted from the second lower emitter (D2).

[0178] Accordingly, one RGB pixel (PX) can be configured by the upper and lower emitters (D1, D2, U1) and the color decision layer (F).

[0179] Meanwhile, FIGS. 10A and 10B illustrate examples in which the light-emitting device (100) includes a supporter (200), but the supporter (200) may be omitted as an optional configuration. In addition, although the light-emitting device (100) omits the transparent layer (300), it is of course possible to have an example in which the transparent layer (300) is additionally provided.

[0180]

[0181] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes to the present invention can be made without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0182] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

[0183] (Explanation of symbols)

[0184] 100: Light-emitting device

Claims

1. Substrate (110), A plurality of emitters (E1 to E) that are arranged on the above substrate (110) and emit light N )field, The above multiple emitters (E1 to E N ) at least one color determination layer (122, 124, 126) disposed on top of the A light emitting device (100) including a barrier layer (130) surrounding the color determination layer (122, 124, 126).

2. In claim 1, The above barrier layer (130) has at least one hole (H), The above color decision layer (122, 124, 126) is a light emitting device (100) located within the hole (H).

3. In claim 1, The above barrier layer (130) has a plurality of holes (H), A light emitting device (100) in which the above plurality of holes (H) are arranged in a grid pattern.

4. In claim 1, The above multiple emitters (E1~E N ) is a light emitting device (100) including a first emitter (E1) emitting light of a first wavelength band, a second emitter (E2) emitting light of a second wavelength band, and a third emitter (E3) emitting light of a third wavelength band.

5. In claim 4, The first to third emitters (E1 to E3) above generate light in the wavelength band of 350 nm to 500 nm, A light emitting device (100) in which the difference in peak wavelength of light emitted from the first to third emitters (E1 to E3) is 5 nm or less.

6. In claim 4, The first to third emitters (E1 to E3) each include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. A light emitting device (100) in which the well layer of each of the above active layers contains the same material.

7. In claim 4, The above color decision layer (122, 124, 126) includes a first color decision layer (122) disposed on the first emitter (E1), a second color decision layer (124) disposed on the second emitter (E2), and a third color decision layer (126) disposed on the third emitter (E3). A light emitting device (100) in which at least one of the first to third color determination layers (122, 124, 126) includes a wavelength conversion material.

8. In claim 7, A light emitting device (100) in which at least one of the first to third color determination layers (122, 124, 126) is a transparent light-transmitting layer.

9. In claim 4, A light emitting device (100) in which the upper surface of the color decision layer (122, 124, 126) coincides with the adjacent upper surface of the barrier layer (130).

10. In claim 9, The width (W1) of the above barrier layer (130) is smaller than the horizontal width (W2) of the adjacent color determination layer (122, 124, 126) of the light emitting device (100).

11. In claim 1, The above barrier layer (130) is a light emitting device (100) including a first barrier layer (132) and a second barrier layer (134) disposed below the first barrier layer (132) and having a vertical height (H12) greater than the vertical height (H11) of the first barrier layer (132).

12. In claim 11, A light emitting device (100) in which the width (W12) of the second barrier layer (134) is narrower than the width (W11) of the first barrier layer (132).

13. In claim 11, A light emitting device (100) in which the first barrier layer (132) comprises the same material as the second barrier layer (134).

14. In claim 11, A light emitting device (100) in which the barrier layer (130) further includes a third barrier layer (136) disposed between the first barrier layer (132) and the color determination layer (122, 124, 126).

15. In claim 14, The above third barrier layer (136) is a light-emitting device (100) that is a metal reflective layer.

16. In claim 11, The above multiple emitters (E1 to E N ) and a buffer layer (140) disposed between the color determination layers (122, 124, 126). A light emitting device (100).

17. In claim 16, A light emitting device (100) in which a portion of the buffer layer (140) is positioned between the color determination layer (122, 124, 126) and the barrier layer (130).

18. In claim 4, It further includes an ohmic electrode (150) disposed on one surface of the first to third emitters (E1 to E3) facing the substrate (110), The shape of each ohmic electrode (150) is the same or similar to the light emitting device (100).

19. Substrate (110), A plurality of lower emitters (D1 to D) that are arranged on the above substrate (110) and emit light N )field, The above lower emitters (D1~D) N ) and at least one upper emitter (U1 to U) emitting light. M ), The above multiple lower emitters (D1 to D) N ) at least one color determination layer (122, 124, 126) disposed on top of the A light emitting device (100) including a barrier layer (130) surrounding the color determination layer (122, 124, 126).

20. In claim 19, The upper emitter (U1~U) M ) is the plurality of lower emitters (D1 to D N ) A light emitting device (100) that emits light in a wavelength band having a different peak wavelength from those of the light emitting devices.

Images