Packaging structure, optical module, and optical communication device

Abstract

The present application provides a packaging structure, an optical module, and optical communication device. The packaging structure is a transistor outline packaging structure. The packaging structure comprises: a tube cap in which a transparent window is provided; a tube base cooperating with the tube cap to form a cavity structure; and a horizontal cavity surface-emitting laser (HCSEL) chip arranged in the cavity structure, a plane where the HCSEL chip is located being parallel to the bearing surface of the tube base, and an optical signal emitted by the HCSEL chip being directed towards the transparent window, wherein the HCSEL chip is provided with a detection unit, and the detection unit is used for measuring the power of the optical signal emitted by the HCSEL chip. The HCSEL chip integrated with the detection unit is arranged in the packaging structure, thereby achieving the simplest packaging form, simplifying the packaging process, and reducing the packaging volume.

Description

Packaging structure, optical module and optical communication equipment

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on September 11, 2023, with application number 202311174779.4, and priority to the Chinese patent application entitled “A packaging structure, optical module and optical communication equipment”, all contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of optical communications, and in particular to a packaging structure, an optical module, and an optical communication device. Background Art

[0003] Optical communication components are crucial hardware components in optical communications, enabling the conversion between electrical and optical signals. With the continuous acceleration of optical network services and the growing demand for smooth upgrades, the market is seeing the coexistence of two or more generations of optical network products. Examples include the compatibility and smooth transition between XG passive optical networks and 10G Ethernet passive optical networks, as well as the need for higher-speed network services.

[0004] The underlying optical components must support the simultaneous transmission of multiple optical signals at different rates and wavelengths to meet the requirements for coexisting multiple ports at different rates and wavelengths. Therefore, these components require high-density and high-integration packaging in various packaging formats. Currently, common packaging technologies include vertical 3D and horizontal packaging. These require multiple surface mount packaging of multiple components, resulting in complex and time-consuming processes and large package sizes. Therefore, achieving these high-density and high-integration packaging requirements is a pressing issue.

[0005] Summary of the Invention

[0006] The present application provides a packaging structure, an optical module and an optical communication device. By arranging a horizontal cavity surface laser chip with an integrated detection unit in the packaging structure, the most simplified packaging form is achieved, the packaging process is simplified, and the packaging volume is reduced.

[0007] In a first aspect, a packaging structure is provided, which is a transistor-shaped packaging structure and includes: a tube cap having a transparent window therein; a tube base, which cooperates with the tube cap to form a cavity structure; a horizontal cavity surface laser (HCSEL) chip, which is arranged in the cavity structure, wherein the plane where the HCSEL chip is located is parallel to the supporting surface of the tube base, and the optical signal emitted by the HCSEL chip is directed toward the transparent window; wherein the HCSEL chip is provided with a detection unit, which is used to detect the power of the optical signal emitted by the HCSEL chip.

[0008] In the packaging structure provided by this application, the HCSEL chip is arranged so that, when the chip is positioned horizontally, light signals are emitted toward the transparent window of the tube cap. This eliminates the need for additional optical reflectors during the packaging process, simplifying the packaging process and reducing the package size. Furthermore, by integrating a detection unit onto the HCSEL chip, the HCSEL chip eliminates the need for an additional monitoring backlight during the packaging process, simplifying the packaging process and reducing the package size, achieving a minimalist packaging form.

[0009] In conjunction with the first aspect, in certain implementations of the first aspect, the HCSEL chip is in the form of an electro-absorption modulated laser (EML), wherein: the EML-type HCSEL chip includes a light emitting unit and an electro-absorption unit, the light emitting unit is used to emit a light beam, and the electro-absorption unit is used to generate a photocurrent signal, which is used to modulate the light beam to generate a light signal emitted by the HCSEL chip; the detection unit is the electro-absorption unit, and the power of the light signal emitted by the HCSEL chip is determined based on the photocurrent signal. Thus, the power of the light signal emitted by the HCSEL chip can be detected by the photocurrent fed back by the electro-absorption unit, achieving high density and high integration of the HCSEL chip. Furthermore, the packaging structure does not require additional backlight monitoring, simplifying the packaging.

[0010] In conjunction with the first aspect, in certain implementations of the first aspect, the HCSEL chip utilizes a distributed feedback (DFB) configuration. In a DFB-type HCSEL chip, the light detection unit comprises a photoresistor. By providing a photoresistor on the HCSEL chip to detect the power of the optical signal emitted by the HCSEL chip, high density and high integration of the HCSEL chip are achieved. This eliminates the need for additional backlight monitoring in the packaging structure, simplifying the packaging.

[0011] In combination with the first aspect, in certain implementations of the first aspect, a horizontal cavity surface laser chip includes a first electrode, a second electrode and a semiconductor substrate, wherein the semiconductor substrate includes a first region, a second region and an isolation groove, and the first region and the second region are respectively located on both sides of the isolation groove, wherein: a light-emitting layer and a reflective bevel are provided in the first region, wherein: the light-emitting layer includes a first light-emitting edge and a second light-emitting edge, the first light-emitting edge is connected to one side of the semiconductor substrate, and the second light-emitting edge is connected to the reflective bevel; a detection unit is provided in the second region, wherein: the detection unit and the light-emitting layer are located in the same plane.

[0012] By setting up a detection unit in the chip, a high-density, highly integrated chip structure can be achieved. In addition, according to the division of the isolation groove, the first light-emitting edge of the light-emitting layer is connected to the substrate of the semiconductor, and the light signal received by the second detection unit comes from the second light-emitting edge of the light-emitting layer, that is, the light-emitting edge specifically located on the side of the reflective bevel in the specific HCSEL chip. This avoids setting up an isolation groove and an isolation area in the opposite direction of the light-emitting edge of the HCSEL chip to place the detection unit, thereby optimizing the chip structure and saving chip space. When one of the side walls of the isolation groove is a reflective bevel, it can further save space and optimize the structural design of the HCSEL chip.

[0013] In conjunction with the first aspect, in certain implementations of the first aspect, the isolation trench includes a first sidewall, and the first sidewall is a reflective slope. That is, the specific position of the isolation trench is defined by the reflective slope, thereby saving space and optimizing the structural design of the HCSEL chip.

[0014] In combination with the first aspect, in certain implementations of the first aspect, a horizontal cavity surface laser chip includes a first electrode, a second electrode and a semiconductor substrate, wherein a light-emitting layer, a reflective bevel, a beam splitting unit and a light detection unit are provided in the semiconductor substrate, wherein: the light-emitting layer includes a first light emitting edge and a second light emitting edge, and the first light emitting edge is connected to one side of the semiconductor substrate; the beam splitting unit includes an input port, a first output port and a second output port, the input port is connected to the second light emitting edge, the first output port is connected to the detection unit, and the second output port is connected to the reflective bevel.

[0015] By providing a detection unit within the chip, a high-density, highly integrated chip structure is achieved. Furthermore, by providing a beam splitter on the second emission edge of the semiconductor substrate, it is possible to avoid the need for isolation trenches and areas opposite the light-emitting edge of the HCSEL chip to house the detection unit, thereby optimizing the chip structure and saving chip space.

[0016] In conjunction with the first aspect, in certain implementations of the first aspect, the packaging structure further includes a cooler, and the HCSEL chip is flatly attached to the cooler. The cooler is used to cool the HCSEL chip, thereby stabilizing the optical signal output of the HCSEL chip.

[0017] In conjunction with the first aspect, in certain implementations of the first aspect, the HCSEL chip includes a light outlet having a spherical structure, or the reflective inclined surface has a spherical structure. Thus, by integrating a lens or a structure having a lens-like effect on the chip, a high-density, highly integrated chip structure is achieved.

[0018] In conjunction with the first aspect, in certain implementations of the first aspect, wherein:

[0019] The packaging structure is a single-transmit mode optical transmitter; or the packaging structure also includes one or more optical transmitter chips, and the packaging structure is a multi-transmit mode optical transmitter, thereby simplifying the packaging structure of the transmitting end, reducing the packaging volume, and lowering the cost of the optical device; or the packaging structure also includes one or more optical receiver chips, and the packaging structure is a one-transmit-one-receive mode or one-transmit-multiple-receive mode optical transmitter and receiver, thereby simplifying the packaging structure of the transmitting end and the receiving end, reducing the packaging volume, and lowering the cost of the optical device; or the packaging structure also includes one or more optical transmitter chips and one or more optical receiver chips, and the packaging structure is a multi-transmit-multiple-receive mode optical transmitter and receiver, thereby simplifying the packaging structure of the transmitting end and the receiving end, reducing the packaging volume, and lowering the cost of the optical device.

[0020] In a second aspect, an optical module is provided, comprising an electrical chip and the packaging structure of the first aspect and any possible implementation thereof, wherein: the electrical chip is used to generate electrical signals, and the electrical signals carry data; the HCSEL chip is used to generate optical signals based on the electrical signals.

[0021] In combination with the second aspect, in certain implementations of the second aspect, it includes an electrical chip, an optical receiving component, and the first aspect and any possible packaging structure thereof, wherein: the electrical chip is used to generate an electrical signal, and the electrical signal carries data; the HCSEL chip is used to generate an optical signal based on the electrical signal; the optical receiving component is used to receive another optical signal and convert it into another electrical signal; and the electrical chip is also used to obtain another data based on the other electrical signal.

[0022] In a third aspect, an optical communication device is provided, comprising N boards, each of the N boards comprising one or more optical modules of the second aspect and any possible implementation thereof, and the third aspect and any possible implementation thereof.

[0023] In a fourth aspect, a packaging method is provided for preparing the packaging structure of the first aspect and any possible implementation thereof.

[0024] In a fifth aspect, an optical chip is provided, comprising a first electrode, a second electrode and a semiconductor substrate, wherein the semiconductor substrate comprises a first region, a second region and an isolation groove, the first region and the second region are respectively located on both sides of the isolation groove, wherein: a light-emitting layer and a reflective slope are provided in the first region, wherein: the light-emitting layer comprises a first light-emitting edge and a second light-emitting edge, the first light-emitting edge is connected to one side of the semiconductor substrate, and the second light-emitting edge is connected to the reflective slope; a detection unit is provided in the second region, wherein: the detection unit and the light-emitting layer are located in the same plane.

[0025] By setting up a detection unit in the chip, a high-density, highly integrated chip structure can be achieved. In addition, according to the division of the isolation groove, the first light-emitting edge of the light-emitting layer is connected to the substrate of the semiconductor, and the light signal received by the second detection unit comes from the second light-emitting edge of the light-emitting layer, that is, the light-emitting edge specifically located on the side of the reflective bevel in the specific HCSEL chip. This avoids setting up an isolation groove and an isolation area in the opposite direction of the light-emitting edge of the HCSEL chip to place the detection unit, thereby optimizing the chip structure and saving chip space. When one of the side walls of the isolation groove is a reflective bevel, it can further save space and optimize the structural design of the HCSEL chip.

[0026] In conjunction with the fifth aspect, in certain implementations of the fifth aspect, the isolation trench includes a first sidewall, and the first sidewall is a reflective slope. That is, the specific position of the isolation trench is defined by the reflective slope, thereby saving space and optimizing the structural design of the HCSEL chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] FIG1 is a schematic diagram of an EML TO packaging structure provided in an embodiment of the present application.

[0028] FIG2 is a schematic diagram of another EML TO packaging method provided in an embodiment of the present application.

[0029] FIG3 is a schematic diagram of another EML TO packaging structure provided in an embodiment of the present application.

[0030] FIG4 is a schematic diagram of another EML TO packaging method provided in an embodiment of the present application.

[0031] FIG5 is a schematic diagram of a DFB TO packaging structure provided in an embodiment of the present application.

[0032] FIG6 is a schematic diagram of another EML TO packaging method provided in an embodiment of the present application.

[0033] FIG7 is a schematic diagram of a packaging structure of an HCSEL chip including an EML according to an embodiment of the present application.

[0034] FIG8 is a three-dimensional schematic diagram of a packaging structure including an HCSEL chip in an EML form provided in an embodiment of the present application.

[0035] FIG9 is a schematic diagram of a packaging method for an HCSEL chip including an EML according to an embodiment of the present application.

[0036] FIG10 is a schematic diagram of a packaging structure of an HCSEL chip including a DFB form provided in an embodiment of the present application.

[0037] FIG11 is a three-dimensional schematic diagram of a packaging structure including a DFB-type HCSEL chip provided in an embodiment of the present application.

[0038] FIG12 is a schematic diagram of a packaging method for an HCSEL chip including a DFB form provided in an embodiment of the present application.

[0039] FIG13 is a schematic structural diagram of an HCSEL chip provided in an embodiment of the present application.

[0040] FIG14 is a schematic structural diagram of another HCSEL chip provided in an embodiment of the present application.

[0041] FIG15 is a schematic structural diagram of another HCSEL chip provided in an embodiment of the present application.

[0042] FIG16 is a schematic diagram of a packaging structure provided in an embodiment of the present application for a light emitting device.

[0043] FIG17 is a schematic diagram of a packaging structure provided in an embodiment of the present application for an optical transceiver device.

[0044] FIG18 is an optical module provided in an embodiment of the present application.

[0045] FIG19 is another optical module provided in an embodiment of the present application.

[0046] FIG20 is an optical communication device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0047] The technical solution in this application will be described below with reference to the accompanying drawings.

[0048] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the quantity of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features.

[0049] References to "one embodiment" or "some embodiments" in this specification mean that a particular feature, structure, or characteristic described in conjunction with that embodiment is included in one or more embodiments of the present application. Thus, phrases such as "in one embodiment," "in some embodiments," "in other embodiments," and "in yet other embodiments" appearing in various places in this specification do not necessarily refer to the same embodiment, but rather mean "one or more but not all embodiments," unless otherwise specifically emphasized. The terms "including," "comprising," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0050] In the description of the embodiments of the present application, the terms "upper", "lower", "vertical", "horizontal", etc. indicate orientations or positional relationships that are defined relative to the orientations or positions of the components schematically placed in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative descriptions and clarifications, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. They may change accordingly according to changes in the orientation of the components placed in the drawings, and therefore cannot be understood as limitations on the present application.

[0051] The terms "including" and "having" and any variations thereof in the embodiments of the present application shown below are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or are inherent to these processes, methods, products or apparatus.

[0052] In the embodiments of this application, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. An embodiment or design described as "exemplary" or "for example" should not be construed as being more preferred or advantageous than other embodiments or designs. The use of words such as "exemplary" or "for example" is intended to present related concepts in a concrete manner to facilitate understanding.

[0053] In the embodiments of the present application, the same reference numerals are used to represent the same component or the same part. In addition, the various parts in the drawings are not drawn to scale, and the sizes and dimensions of the parts shown in the drawings are only exemplary and should not be understood as limiting the present application.

[0054] Optical communication devices are a crucial hardware component of optical communication services, enabling the conversion between electrical and optical signals. With the increasing speed and smooth upgrade demands for optical network services, the market is seeing the coexistence of two or more generations of optical network products. Examples include the compatibility and smooth transition between the 10-Gigabit Passive Optical Network (XG PON) and the 10G Ethernet Passive Optical Network (10G-EPON), as well as higher-speed network services. Underlying optical devices must support the simultaneous transmission of multiple optical signals at different rates and wavelengths to meet the need for multiple ports with varying rates and wavelengths to coexist. Consequently, these underlying optical devices require high-density and high-integration packaging in various packaging formats.

[0055] Optical modules are core components in optical communications. The coaxial optical devices included in optical modules are important optoelectronic devices that enable optical modules to convert electrical and optical signals into optical and electrical signals. Coaxial optical devices can be packaged in a transistor outline (TO) package. TO packaging is relatively simple and low-cost, making it widely used in optical device products in fields such as PON, wireless, and network interconnection protocols. TO packaging includes various models, such as the transmit optical sub-assembly (TOSA), receive optical sub-assembly (ROSA), bidirectional optical sub-assembly (BOSA), triplexer optical sub-assembly, and quad-optical sub-assembly (Quad-OSA).

[0056] In a TO package, the laser chip is the core component, used to transmit optical signals. Laser chips can be categorized by form factor into two types: electro-absorption modulation (EML) and distributed feedback (DFB). The following briefly describes EML and DFB package structures.

[0057] FIG1 is a schematic diagram of an EML TO package structure provided in an embodiment of the present application. It utilizes traditional vertical three-dimensional packaging technology. The package structure includes a base 110, a cooler 120, an RF signal substrate 130, a heat sink 140, a chip 150, a monitoring backlight 160, a first capacitor 170, a thermistor 180, and a second capacitor 190. Among them:

[0058] The base 110 carries a chip 150 and other passive components on its carrying surface.

[0059] The cooler 120 may specifically refer to a thermoelectric cooler (TEC), which utilizes the thermoelectric effect of semiconductor materials for cooling.

[0060] The radio frequency signal substrate 130 is used to transmit radio frequency signals.

[0061] The heat sink 140 is used to absorb and disperse heat.

[0062] The chip 150 may specifically refer to a chip on carrier (COC) on an EML substrate, and is configured to receive externally modulated electrical signals and convert the electrical signals into optical signals for output.

[0063] The monitoring backlight 160 may specifically refer to a modulation photodiode (mPD), which is used to receive and detect the power of the modulated optical signal.

[0064] FIG2 is a schematic diagram of another EML TO packaging method provided by an embodiment of the present application. As shown in FIG2 , corresponding to the EML TO packaging structure of FIG1 , the packaging process includes steps S110-S170:

[0065] S110: Use silver glue to attach the cooler flatly to the tube holder; or use Au-Sn solder to fix the cooler eutectic to the tube holder and bake it at high temperature to complete the solidification.

[0066] S120: Use silver glue to stick the heat sink upright on the surface of the cured refrigerator to complete high-temperature baking and curing.

[0067] S130: Use silver glue to stick the monitor backlight to the 8-degree slope of the heat sink and complete high-temperature baking and curing.

[0068] S140: Using silver glue, the first capacitor, the thermistor, and the second capacitor are sequentially mounted on one side of the heat sink, and then baked and cured at high temperature.

[0069] S150: Use silver glue to mount the chip on the surface of the heat sink at 90 degrees, and then bake it at high temperature to solidify it again.

[0070] S160: When a separate radio frequency signal substrate is used, the radio frequency signal substrate 130 is mounted on the pillar of the tube holder at a 90-degree angle using silver glue, and then baked and cured at high temperature.

[0071] S170: Complete the required gold wire bonding between all internal components and weld the external caps.

[0072] FIG3 is a schematic diagram of another EML TO package structure provided by an embodiment of the present application. It adopts a horizontal package. The package structure includes a tube base 210, a thermistor 220, a first capacitor 230, a monitoring backlight 240, a second capacitor 250, a cooler 260, an optical reflector 270, a chip 280, and a tube cap 290. Among them:

[0073] The base 210 , thermistor 220 , the first capacitor 230 , the monitoring backlight 240 , the second capacitor 250 , the cooler 260 and the chip 280 are similar to those in FIG. 1 and are not described in detail here.

[0074] In addition, an optical reflector 270 is further provided in the horizontal packaging structure, which is used to change the emission direction of the optical signal of the chip 280 .

[0075] FIG4 is a schematic diagram of another EML TO packaging method provided by an embodiment of the present application. Corresponding to the EML TO packaging structure of FIG3 , the specific packaging process includes steps S210-S270:

[0076] S210: Use silver glue to attach the cooler flatly to the tube holder; or use Au-Sn solder to fix the cooler eutectic to the tube holder and bake it at high temperature to complete the solidification.

[0077] S220: Use silver glue to stick the chip flat on the refrigerator and bake it at high temperature to solidify it.

[0078] S230: Attach the optical reflector flatly to the chip at a 45° angle, place the optical reflector in front of the laser diode of the chip, and bake at high temperature for curing.

[0079] S240: Attach the side-light-collecting monitoring backlight flatly behind the laser diode of the chip and bake it at high temperature to solidify it.

[0080] S250: Use silver glue to stick the transition block flat on the cooler and bake it at high temperature to fix it.

[0081] S260: Lay the thermistor, the first capacitor, the second capacitor and other components flatly on the transition pad in sequence, and bake them at high temperature to solidify.

[0082] S270: Complete the required gold wire bonding between all internal components and weld the external caps.

[0083] FIG5 is a schematic diagram of a DFB TO package structure provided by an embodiment of the present application. It adopts traditional vertical three-dimensional packaging technology, and the package structure includes a tube base 310, a spacer 320, a monitoring backlight 330, a tube cap 340, a substrate 350, and a chip 360. Among them:

[0084] The tube socket 310 may specifically refer to a DFB stamped tube socket, on which the chip 360 and other passive components are packaged.

[0085] The spacer 320 is used to adjust the position of the chip 360 .

[0086] The chip 360 may specifically refer to a DFB chip.

[0087] The remaining components such as the monitoring backlight 330 and the tube cap 340 are similar to those in FIG. 1 and FIG. 2 and are not described in detail here.

[0088] FIG6 is a schematic diagram of another EML TO packaging method provided by an embodiment of the present application. Corresponding to the EML TO packaging structure of FIG5 , the specific packaging process includes steps S310-S340:

[0089] S310: Use silver glue to stick the spacer obliquely on the tube holder with an 8-degree groove bevel.

[0090] S320: Lay the monitoring backlight layer flat on the pad and bake it at high temperature to solidify it.

[0091] S330: Lay the substrate and chip flat on the pillars of the tube holder at 90 degrees to complete eutectic fixation.

[0092] S340: Complete the required gold wire bonding between all internal components and the external sealing welding caps.

[0093] Among the above three packaging structures, EML vertical three-dimensional technology packaging requires multiple material components to be packaged multiple times, the process is complicated, the packaging takes a long time, and the package size is large; EML horizontal packaging requires an external optical reflector, the process is complicated, and the package size is large; DFB vertical three-dimensional technology packaging requires the addition of gaskets and stamped tube sockets, the packaging is complicated, the process is complicated, it takes a long time, the packaging cost is high, and the package size is large.

[0094] In view of this, the present application provides a packaging structure, an optical module and an optical communication device, which realizes the simplest packaging form, simplifies the packaging process and reduces the packaging volume by arranging a horizontal cavity surface laser chip with an integrated detection unit in the packaging structure.

[0095] The present application provides a packaging structure, which is a transistor outline (TO) packaging structure, and the packaging structure includes:

[0096] The tube cap and the tube base cooperate to form a cavity structure, wherein a transparent window is provided in the tube cap.

[0097] A horizontal cavity surface-emitting laser (HCSEL) chip is housed in the cavity formed by the tube cap and tube base. The plane of the HCSEL chip is parallel to the support surface of the tube base. The optical signal emitted by the HCSEL chip is directed toward a transparent window, thereby transmitting the optical signal outward through the transparent window provided on the tube cap. The HCSEL chip is equipped with a detection unit, also known as an integrated photo detector (PD). The detection unit is used to detect the power of the optical signal emitted by the HCSEL chip.

[0098] In the packaging structure provided by this application, the HCSEL chip is arranged so that, when the chip is positioned horizontally, light signals are emitted toward the transparent window of the tube cap. This eliminates the need for additional optical reflectors during the packaging process, simplifying the packaging process and reducing the package size. Furthermore, by integrating a detection unit onto the HCSEL chip, the HCSEL chip eliminates the need for an additional monitoring backlight during the packaging process, simplifying the packaging process and reducing the package size, achieving a minimalist packaging form.

[0099] The packaging structure of the present application is described below in conjunction with the HCSEL chip being an EML-type HCSEL chip, specifically a DFB-type HCSEL chip.

[0100] Figure 7 is a schematic diagram of a package structure including an HCSEL chip in an EML format, provided in an embodiment of the present application. As shown in Figure 7 , the package structure includes a base 710 , a cooler 720 , a substrate 730 , an HCSEL chip 740 , a cap 750 , a spacer 760 , and a thermistor 770 .

[0101] The base 710 and the cap 750 cooperate to form a cavity structure. The plane where the HCSEL chip 740 is located is parallel to the supporting surface of the base, and the optical signal emitted by the HCSEL chip is directed toward the transparent window, thereby transmitting the optical signal outward through the transparent window provided on the cap.

[0102] HCSEL chip 740 specifically refers to an EML-type HCSEL chip, which includes a light emitting unit and an electroabsorption unit. The light emitting unit is used to emit a light beam, while the electroabsorption unit is used to generate a photocurrent signal. The photocurrent signal generated by the electroabsorption unit is used to modulate the light beam emitted by the light emitting unit to generate the light signal emitted by the HCSEL chip. In this case, the detection unit is the electroabsorption unit. The power of the light signal emitted by the HCSEL chip is determined by the photocurrent signal. At the same operating point voltage, the greater the current input to the HCSEL chip, the greater the power of the light signal emitted by the HCSEL chip and the greater the photocurrent generated by the electroabsorption unit. The two are positively correlated, indicating that the photocurrent signal generated by the electroabsorption unit can function similarly to an integrated photodetector and can be used as a detection unit. Therefore, the photocurrent feedback from the electroabsorption unit can be used to detect the power of the light signal emitted by the HCSEL chip, achieving high density and high integration of the HCSEL chip. This also eliminates the need for additional backlight monitoring in the packaging structure, simplifying the packaging.

[0103] Specifically, the plane where the HCSEL chip 740 is located is parallel to the supporting surface of the tube holder, which can be understood as any of the following forms, or other forms similar to any of the following forms:

[0104] (a) The HCSEL chip 740 is flatly attached to the supporting surface of the tube base 710;

[0105] (b) The packaging structure further includes a cooler 720, which is disposed on the supporting surface of the tube holder, and the HCSEL chip 740 is flatly attached to the cooler 720;

[0106] (c) A substrate 730 is provided on the supporting surface of the tube base 710, and the HCSEL chip 740 is flatly attached to the substrate 730;

[0107] (d) A substrate 730 is provided on the supporting surface of the tube base 710 , a cooler is mounted on the surface of the substrate 730 , and an HCSEL chip 740 is flatly attached to the cooler.

[0108] In the structure shown in FIG7 , the transparent window provided on the tube cap 750 can be a lens structure, as shown in FIG7 (a), for focusing the optical signal emitted by the HCSEL chip 740, so that the optical signal is emitted in a collimated manner. Alternatively, as shown in FIG7 (b), it can be a window without any structure, or a window including a transparent medium, which is not limited in this application. In this case, the lens interface can be provided at the light outlet of the HCSEL chip 740. The specific configuration will be described later in conjunction with FIG15 .

[0109] FIG8 is a perspective diagram of a package structure including an HCSEL chip in an EML format according to an embodiment of the present application. The tube base 810, thermistor 820, tube cap 830, cooler 840, and HCSEL chip 850 shown in FIG8 correspond to the tube base 710, thermistor 770, tube cap 750, cooler 720, and HCSEL chip 740 shown in FIG7 , and are not further described herein.

[0110] FIG9 is a schematic diagram of a packaging method for an HCSEL chip in an EML format according to an embodiment of the present application. Corresponding to the packaging structures of FIG7 and FIG8 , the packaging method includes steps S910 to S940.

[0111] S910: Use silver glue to stick the cooler flat on the tube holder and bake it at high temperature to solidify it.

[0112] S920: Use silver glue to mount the carrier board and chip stack on the surface of the cooler.

[0113] S930: On top of the cooler, the pads and thermistors are stacked on one side of the chip to complete high-temperature baking and curing.

[0114] S940: Complete the required gold wire bonding connections between internal components and weld the external tube caps to complete the package.

[0115] In the packaging structure and method of the above-mentioned EML-type HCSEL chip, by setting the HCSEL chip, it is possible to transmit an optical signal toward the transparent window of the tube cap when the chip is set horizontally. During the packaging process, there is no need to add an additional optical reflector, which simplifies the packaging process and reduces the packaging volume. Moreover, on the basis of using the HCSEL chip, the photocurrent signal fed back by the absorption unit of the EML-type HCSEL chip is used as feedback. During the packaging process, there is no need to add an additional monitoring backlight, which simplifies the packaging process and reduces the packaging volume. In addition, the HCSEL chip can be directly attached to the tube base, and the leads are directly connected to the optical signal pins, without the need to add an RF signal substrate to ensure high-speed signal drainage. Alternatively, the HCSEL chip can be directly attached to the cooler, without the need to add a heat sink to guide heat dissipation. This achieves the simplest packaging form.

[0116] FIG10 is a schematic diagram of a package structure of an HCSEL chip in a DFB format according to an embodiment of the present application. As shown in FIG10 , the package structure includes a base 1010 , a substrate 1020 , an HCSEL chip 1030 , and a cap 1040 .

[0117] The tube base 1010 and the tube cap 1040 cooperate to form a cavity structure. The plane where the HCSEL chip 1030 is located is parallel to the supporting surface of the tube base, and the optical signal emitted by the HCSEL chip is directed toward the transparent window, thereby transmitting the optical signal outward through the transparent window provided on the tube cap.

[0118] HCSEL chip 1030, specifically a DFB-type HCSEL chip, achieves single-mode optical signal output by introducing periodic refractive index modulation into the waveguide structure. In a DFB-type HCSEL chip, the detection unit can be composed of a photoresistor. By providing a photoresistor on the HCSEL chip to detect the power of the optical signal emitted by the HCSEL chip, high density and high integration of the HCSEL chip are achieved. This eliminates the need for additional backlight monitoring in the packaging structure, simplifying the packaging. The specific chip integration structure will be described later in conjunction with Figures 13 and 14.

[0119] Specifically, the plane where the HCSEL chip 1030 is located is parallel to the supporting surface of the tube holder, which can be understood as any of the following forms, or other forms similar to any of the following forms:

[0120] (a) The HCSEL chip 1030 is flatly attached to the supporting surface of the tube base 1010;

[0121] (b) The packaging structure further includes a cooler, which is disposed on the supporting surface of the tube holder, and the HCSEL chip 1030 is flatly attached to the cooler;

[0122] (c) A substrate 1020 is provided on the supporting surface of the tube base 1010, and the HCSEL chip 1030 is flatly attached to the substrate 1020;

[0123] (d) A substrate 1020 is provided on the supporting surface of the tube base 1010 , a cooler is mounted on the surface of the substrate 1020 , and an HCSEL chip 1030 is flatly attached to the cooler.

[0124] In the structure shown in FIG10 , the transparent window provided on the tube cap 1040 can be a lens structure, as shown in FIG10 (a), for focusing the optical signal emitted by the HCSEL chip 1030, so that the optical signal is emitted in a collimated manner. Alternatively, as shown in FIG10 (b), it can be a window without any structure, or a window including a transparent medium, which is not limited in this application. In this case, the lens structure can be integrated into the HCSEL chip 1030. The specific configuration will be described later in conjunction with FIG15 .

[0125] FIG11 is a perspective schematic diagram of a package structure including a DFB-type HCSEL chip according to an embodiment of the present application. The base 1110, substrate 1120, HCSEL chip 1130, and cap 1140 shown in FIG11 correspond to the base 1010, substrate 1020, HCSEL chip 1030, and cap 1040 shown in FIG10 , and are not further described here.

[0126] FIG12 is a schematic diagram of a packaging method for a DFB-type HCSEL chip according to an embodiment of the present invention. Corresponding to the packaging structures of FIG10 and FIG11 , the packaging method includes steps S1010 and S1020.

[0127] S1210: Place the HCSEL chip flat on the tube socket; or place the substrate flat on the tube socket, and then laminate the HCSEL chip on the substrate; or place the cooler flat on the tube socket, and then laminate the HCSEL chip on the cooler; or place the substrate flat on the tube socket, and then laminate the cooler on the substrate, and then laminate the HCSEL chip on the cooler.

[0128] S1220: Complete the required gold wire bonding connections between internal components and weld the external tube caps to complete the package.

[0129] In the aforementioned DFB-type HCSEL chip packaging structure and method, the HCSEL chip is positioned horizontally to emit light signals toward the transparent window of the tube cap. This eliminates the need for additional optical reflectors during the packaging process, simplifying the packaging process and reducing the package size. Furthermore, a detection unit is integrated onto the HCSEL chip, eliminating the need for an additional monitoring backlight during the packaging process, simplifying the packaging process and reducing the package size. Furthermore, no unnecessary resistors or capacitors are required, achieving a minimalist packaging form.

[0130] Figure 13 is a schematic diagram of the structure of an HCSEL chip provided in an embodiment of the present application. As shown in Figure 13, the HCSEL chip includes a first electrode 1310, a second electrode 1320, and a semiconductor substrate 1330. The first electrode 1310 and the second electrode 1320 can be disposed on the same surface or different surfaces of the semiconductor substrate 1330. The first electrode 1310 can be a P-type metal, and the second electrode 1320 can be an N-type metal. In some implementations, the first electrode 1310 can include a P-type metal and an InGaAsP material, which is not limited in this application.

[0131] In some implementations, the HCSEL chip also includes a light reflecting element. The light reflecting element is used to form a resonant cavity in the first region, and the photons are amplified by the mode selection of the resonant cavity to form an outgoing light signal. The specific structure of the light reflecting element can be in two forms as shown in Figure 13 (a) and Figure 13 (b). As shown in Figure 13 (a), the light reflecting element includes a deep reactive ion etching (DRB) grating 1341. As shown in Figure 13 (b), the light reflecting element includes a high reflectivity (HR) film 1341 attached to one side of the semiconductor substrate 1330. In some implementations, an anti-reflection (AR) film 1342 is also attached to one side of the light outlet. In some implementations, the methods shown in Figures 13 (a) and (b) can be combined with each other, and this application does not limit this.

[0132] The semiconductor substrate 1330 specifically includes a first region, a second region, and an isolation trench 1370. The first region and the second region are located on either side of the isolation trench 1370, respectively. That is, the first region and the second region are isolated by the isolation trench 1370. The division of the first region and the second region can be referred to FIG13 (e).

[0133] The first region is provided with a light-emitting layer 1350. Light-emitting layer 1350 can be composed of an active material or a combination of an active material and a passive material. Light-emitting layer 1350 includes a first light-emitting edge and a second light-emitting edge. The first light-emitting edge is connected to one side of the semiconductor substrate, and the second light-emitting edge is connected to the reflective bevel 1380. In the light-emitting layer, the second light-emitting edge is used to emit a first light signal. After the second laser emitting edge emits a light signal, a portion of the light signal passes through the connected reflective bevel 1380 to form a second light signal perpendicular to the plane of the HCSEL chip, which is emitted from the HCSEL chip. A portion of the light signal passes through the connected reflective bevel 1380 to form a third light signal parallel to the plane of the HCSEL chip, passes through the isolation trench 1370, and enters the second region.

[0134] The second region is provided with a detection unit 1360, wherein the detection unit 1360 is located in the same plane as the light-emitting layer 1350, thereby receiving the third light signal entering the second region and detecting the light signal. In some implementations, as shown in FIG13(d), the detection unit 1360 may include an amplification unit 1390, which may be a semiconductor optical amplifier (SOA) for amplifying the third light signal to facilitate light detection by the detection unit.

[0135] It should be understood that this application does not limit the location of the isolation trench 1370. The isolation trench is used to isolate the light-emitting layer in the first region from the detection unit in the second region, preventing problems such as photoelectric crosstalk. In some implementations, the isolation trench includes a first sidewall, which is a reflective slope 1380. The specific location of the isolation trench is defined by the reflective slope, thereby saving space and optimizing the structural design of the HCSEL chip.

[0136] It should be understood that the present application does not limit the specific angle of the reflective bevel 1380 in the first region. For example, the angle of the reflective bevel 1380 can be 45°. In some cases, the reflective bevel 1380 can also refer to a reflector. In some cases, the reflective bevel 1380 is formed by etching.

[0137] It should be understood that the present application does not limit the specific emission position of the second optical signal on the HCSEL chip. In some cases, the HCSEL chip includes a light outlet, which is used to output the second optical signal. The present application does not limit the specific position of the light outlet. For example, it can be located on the first plane of the semiconductor substrate 1330 as shown in (a), (b) and (d) in Figure 13, and the first plane can be the plane of the semiconductor substrate 1330 adjacent to the first electrode 1310. Alternatively, it can be located on the second plane of the semiconductor substrate 1330 as shown in (c) in Figure 13, and the second plane can be the plane of the semiconductor substrate 1330 adjacent to the second electrode 1320. The specific light outlet position is determined according to the reflective bevel 1380.

[0138] In the structure shown in FIG13 , a high-density, highly integrated chip structure is achieved by providing a detection unit within the chip. Furthermore, due to the division of the isolation groove, the first light-emitting edge of the light-emitting layer is connected to the semiconductor substrate, and the light signal received by the second detection unit comes from the second light-emitting edge of the light-emitting layer, i.e., the light-emitting edge located on the side of the reflective bevel in the HCSEL chip. This avoids the need to provide an isolation groove and an isolation area opposite to the light-emitting edge of the HCSEL chip to house the detection unit, thereby optimizing the chip structure and saving chip space. If one of the sidewalls of the isolation groove is a reflective bevel, further space can be saved, optimizing the structural design of the HCSEL chip.

[0139] FIG14 is a schematic diagram of the structure of another HCSEL chip provided in an embodiment of the present application. As shown in FIG14 , the HCSEL chip includes a first electrode 1410, a second electrode 1420, and a semiconductor substrate 1430. The specific configuration of the first electrode 1410 and the second electrode 1420 is similar to that of the first electrode 1310 and the second electrode 1320 in FIG13 . The configuration of the light-reflecting element 1441 is similar to that of the light-reflecting element 1341 in FIG13 , and will not be further described here. The semiconductor substrate 1430 specifically includes a light-emitting layer 1450, a detection unit 1460, a beam splitting unit 1470, and a reflective bevel 1480.

[0140] The light emitting layer 1450 in FIG14 includes a first light emitting edge and a second light emitting edge, and the first light emitting edge is connected to one side of the semiconductor substrate.

[0141] The optical splitter unit 1470 is used to perform optical splitting processing on the first optical signal output from the second optical emission edge, and includes an input port, a first output port, and a second output port. The specific configuration of the optical splitter unit 1470 is shown in the cross-sectional view from the side in FIG14 (a) and the cross-sectional view from the top in FIG14 (b):

[0142] The input port of the beam splitting unit 1470 is connected to the second light emitting edge, the first output port is connected to the detection unit, and the second output port is connected to the reflective bevel 1480. Thus, after the first optical signal is input into the beam splitting unit from the input port, a portion of the optical signal is output from the first output port, and a portion of the optical signal is output from the second output port. Part of the signal light output from the second port is reflected from the reflective bevel 1480, forming a second optical signal perpendicular to the plane where the HCSEL chip is located, and is emitted from the HCSEL chip. The third optical signal output from the first port is input into the detection unit, and the detection unit performs optical detection on the third optical signal. The beam splitting unit can also refer to a beam splitter, and the splitting ratio of its first output port and second output port can be adjusted.

[0143] In some implementations, the detection unit 1460 includes an amplification unit, similar to FIG13 , and the amplification unit is configured to amplify the third optical signal, thereby facilitating optical detection by the detection unit.

[0144] In the structure shown in Figure 14, a high-density, highly integrated chip structure is achieved by providing a detection unit within the chip. Furthermore, by providing a beam splitter unit on the second emitting edge of the semiconductor substrate, it is possible to avoid the need for isolation trenches and isolation areas opposite the light-emitting edge of the HCSEL chip to house the detection unit, thereby optimizing the chip structure and saving chip space.

[0145] It should be understood that the optical signals (the first optical signal, the second optical signal, and the third optical signal) described in FIG. 13 and FIG. 14 may specifically refer to laser signals, or other forms of optical signals, and the present application does not impose any limitation thereto.

[0146] Figure 15 is a schematic diagram of the structure of another HCSEL chip provided in an embodiment of the present application. As shown in Figure 15 , the HCSEL chip includes a first electrode, a second electrode, a light-reflecting element, and a semiconductor substrate. The semiconductor substrate includes a light-emitting layer and a reflective bevel 1520. The specific arrangement of the first electrode, the second electrode, the light-reflecting element, and the reflective bevel 1520 included in the semiconductor substrate are similar to those in Figures 13 and 14 and will not be further described here.

[0147] In some implementations, as shown in (a), (b) and (c) in FIG15 , the HCSEL chip includes a light outlet, which is a curved surface structure. The specific position of the light outlet is determined according to the reflective bevel 1520, and the present application does not limit the specific position of the light outlet. The light outlet is used to output the light signal emitted by the HCSEL chip. After passing through the curved surface structure of the light outlet, the light signal is focused, thereby achieving an effect similar to that of an optical lens, so that the light signal is collimated and emitted from the HCSEL chip. It should be understood that the present application does not limit how to prepare the light outlet as a curved surface structure. In the case of (a) and (b) in FIG15 , for example, the spherical structure is formed by solidifying an adhesive, or it can also be understood as a glue dripping method, that is, using a low-refractive-index glue to solidify to form a spherical structure, thereby achieving a low-cost and easy-to-prepare spherical structure preparation solution. In the case of Figure 15(a), the HCSEL chip has an isolation groove 1530 or other uneven topography near the light outlet. In this case, a low-refractive-index glue can be used to flatten the surface, and then a glue drop method can be used to form a curved surface structure at the light outlet of the HCSEL chip. In the case of Figure 15(c), the spherical surface structure is formed by etching the substrate.

[0148] In some implementations, as shown in FIG15( d ), a light outlet is provided in the HCSEL chip, and the light outlets are periodically arranged. The HCSEL chip includes a light outlet for outputting the optical signal emitted by the HCSEL chip. After passing through the periodically arranged structure of the light outlet, the far-field divergence angle of the optical signal is reduced, thereby achieving an effect similar to that of an optical lens, allowing the optical signal to be collimated and emitted from the HCSEL chip. In some cases, the periodically arranged structure is formed using metasurface technology.

[0149] In some implementations, as shown in (e) and (f) of FIG15 , the reflective bevel 1520 is a curved surface structure. The reflective bevel 1520 is used to reflect the light signal emitted by the light-emitting layer included in the HCSEL chip. After passing through the curved surface structure of the reflective bevel 1520, the light signal is focused, thereby achieving an effect similar to that of an optical lens, so that the light signal is emitted from the HCSEL chip in a collimated manner. In some cases, the curved surface structure of the reflective bevel 1520 is formed using a grayscale exposure process or other similar processes.

[0150] As shown in the structural diagram of the HCSEL chip in FIG15 , a high-density, high-integration chip structure is achieved by integrating a lens or a structure having a similar effect to a lens on the chip.

[0151] The above describes the package structure and HCSEL chip structure of the present application in conjunction with specific embodiments. Next, the specific implementation mode of the package structure of the present application will be described.

[0152] In some implementations, the package structure may include only one HCSEL chip, and the package structure is a light emitting device in a single-shot mode.

[0153] In some implementations, the packaging structure includes not only an HCSEL chip but also one or more light emitting chips. The packaging structure is a multi-mode light emitting device, thereby simplifying the packaging structure of the transmitting end, reducing the packaging volume, and lowering the cost of the optical device.

[0154] In some implementations, the packaging structure includes, in addition to an HCSEL chip, one or more optical receiving chips. The packaging structure is an optical transceiver device in a one-transmitter-one-receiver mode or a one-transmitter-multiple-receiver mode, thereby simplifying the packaging structure of the transmitting end and the receiving end, reducing the packaging volume, and reducing the cost of the optical device.

[0155] In some implementations, the packaging structure also includes one or more optical transmitting chips and one or more optical receiving chips. The packaging structure is a multi-transmitting and multi-receiving optical transceiver device, thereby simplifying the packaging structure of the transmitting end and the receiving end, reducing the packaging volume, and reducing the cost of the optical device.

[0156] FIG16 is a schematic diagram of a package structure provided in an embodiment of the present application for a light-emitting device. Specifically, the package structure includes an HCSEL chip 1620 and one or more light-emitting chips. The HCSEL chip and light-emitting chip in the package structure are used to output an optical signal based on a received electrical signal. The one or more light-emitting chips can be any chip for emitting optical signals, such as a vertical cavity surface emitting laser chip, a Fabry-Perot laser chip, an EML chip, a DFB chip, or the like, or the HCSEL chip described in FIG13-15. The one or more light-emitting chips can be the same or different, and this application does not impose any limitation on this.

[0157] In some implementations, as shown in FIG16(a), the HCSEL chip and the one or more light emitting chips may be located in different planes. Specifically, the HCSEL chip and the one or more light emitting chips may be disposed at different locations on the substrate 1610. In the case shown in FIG16(a), the transmission paths of the optical signals emitted by the HCSEL chip 1620 and the light emitting chip 1640 overlap.

[0158] In some implementations, as shown in Figures 16(b) and (c), the HCSEL chip and one or more light-emitting chips may be located in the same plane. For example, as shown in Figures 16(b) and (c), the HCSEL chip 1620 and the light-emitting chip 1640 may be disposed in the same orientation on the substrate 1610. In some implementations, the transparent window of the cap 1630 may include multiple optical lenses to ensure that the optical signal is collimated and emitted from the package structure. Alternatively, the optical lenses may be integrated into the HCSEL chip and the light-emitting chip, as shown in Figure 15, but this application is not limited to this.

[0159] Among them, the mounting methods of HCSEL chips, optical transmitter chips and optical receiver chips in optical transceiver devices can be active mounting and passive mounting. Active mounting can be understood as a packaging structure that includes optical components with active functions, such as optical modulators, etc. Through active coupling, multiple light beams can be combined in different dimensions, that is, the overall package appears to the outside as a single-beam optical path component containing different optical signals. Passive mounting can be understood as a packaging structure that only includes optical components with passive functions, such as optical isolators, splitters, optical switches, etc. Through passive mounting, multiple light beams can be combined in different dimensions, that is, the overall package appears to the outside as a single-beam optical path component containing different optical signals.

[0160] FIG17 is a schematic diagram of a package structure provided by an embodiment of the present application for an optical transceiver device. That is, the package structure includes at least an HCSEL chip 1710 and an optical receiver chip. In some implementations, the package structure may also include one or more optical receiver chips.

[0161] Among them, the HCSEL chip and the light emitting chip in the packaging structure are used to output light signals according to the received electrical signals. The light receiving chip is used to convert the received light signal into an electrical signal and output it. One or more light emitting chips can be any chip for emitting light signals, such as a vertical cavity surface emitting laser chip, a Fabry-Perot laser chip, an EML chip, a DFB chip, etc., or an HCSEL chip as described in Figures 13-15, and this application does not limit this. One or more light emitting chips can be the same or different, and this application does not limit this. One or more light receiving chips can be photodiode chips, photomultiplier tube chips, for example, avalanche photodiode (APD) chips, and this application does not limit this. One or more light receiving chips can be the same or different, and this application does not limit this.

[0162] In some implementations, as shown in (a) of FIG17 , at least one pillar is provided in the packaging structure, wherein a first chip is supported on the pillar, and the pillar is used to adjust the position height of the first chip so that the optical signal emitted by the first chip is aligned with the transparent window provided in the tube cap 1720, or the first chip can receive the optical signal emitted from the transparent window provided in the tube cap 1720, wherein the first chip can be any one of an optical receiving chip, an optical emitting chip, and the HCSEL chip described in FIG13-15 .

[0163] In some implementations, as shown in (a), (b), (c) and (d) in FIG. 17 , at least one prism is provided in the packaging structure, and the prism in the at least one prism can be provided between the second chip and the transparent window provided in the tube cap 1720. The prism in the at least one prism is used to adjust the optical transmission path between the tube cap and the second chip so that the optical signal emitted by the second chip is aligned with the transparent window provided in the tube cap 1720, or the first chip can receive the optical signal emitted from the transparent window provided in the tube cap 1720. The second chip can be any one of an optical receiving chip, an optical emitting chip and the HCSEL chip described in FIG. 13-15 .

[0164] The specific arrangement and position of the pillars and prisms are determined according to actual conditions. For example, as shown in FIG17(a), a pillar and a prism can be provided in the packaging structure so that the optical receiving chip 1730 receives the optical signal emitted from the transparent window provided in the tube cap 1720. As shown in FIG17(b), a group of prisms (two prisms) can be provided in the packaging structure so that the optical receiving chip 1730 receives the optical signal emitted from the transparent window provided in the tube cap 1720. As shown in FIG17(d), two groups of prisms (two prisms in each group) can be provided in the packaging structure so that the optical receiving chips 1731 and 1732 can respectively receive the optical signal emitted from the transparent window provided in the tube cap 1720 through their respective corresponding prism groups.

[0165] In some implementations, as shown in (c) of FIG17 , the packaging structure further includes a sub-packaging structure, and a third chip is provided in the sub-packaging structure. The third chip can be any one of an optical receiving chip, an optical emitting chip, and the HCSEL chip described in FIG13-15 .

[0166] Among them, the mounting methods of HCSEL chips, optical transmitter chips and optical receiver chips in optical transceiver devices can be active mounting and passive mounting. Active mounting can be understood as a packaging structure that includes optical components with active functions, such as optical modulators, etc. Through active coupling, multiple light beams can be combined in different dimensions, that is, the overall package appears to the outside as a single-beam optical path component containing different optical signals. Passive mounting can be understood as a packaging structure that only includes optical components with passive functions, such as optical isolators, splitters, optical switches, etc. Through passive mounting, multiple light beams can be combined in different dimensions, that is, the overall package appears to the outside as a single-beam optical path component containing different optical signals.

[0167] In addition, the present application also provides an optical module and an optical communication device, including the packaging structure described in Figures 5-12 or 16-17.

[0168] FIG18 illustrates an optical module provided in an embodiment of the present application. As shown in FIG18 , the optical module includes an electrical chip 1810 and the aforementioned package structure 1820. The electrical chip 1810 is electrically connected to the HCSEL chip within the package structure 1820. The electrical chip 1810 generates an electrical signal that carries data, and the HCSEL chip generates an optical signal based on the electrical signal. The electrical chip 1810 modulates the optical signal emitted by the HCSEL chip, completing the optical-to-electrical conversion of the signal.

[0169] In the case of a packaging structure such as the integrated structure described in Figures 16-17, the electrical chip 1810 can be electrically connected to any chip included in the packaging structure 1820, so that any optical transmitting chip can transmit a corresponding optical signal based on the electrical signal generated by the electrical chip 1810, and any optical receiving chip can convert the received optical signal into another electrical signal, and the electrical chip 1810 can convert the other electrical signal into corresponding data.

[0170] FIG19 is another optical module provided by an embodiment of the present application. As shown in FIG19 , the optical module includes an electronic chip 1910, a light receiving component 1920, and the above-mentioned packaging structure 1930.

[0171] The electrical chip 1910 is electrically connected to the HCSEL chip in the package structure. The electrical chip is used to generate electrical signals that carry data, and the HCSEL chip is used to generate optical signals based on the electrical signals. The electrical chip modulates the optical signals emitted by the HCSEL chip, completing the photoelectric conversion of the signals.

[0172] The electronic chip 1910 is electrically connected to the optical receiving component 1920. The optical receiving component 1920 is used to receive another optical signal and convert it into another electrical signal. The electronic chip 1910 is used to obtain another data based on the other electrical signal. Thus, the electronic chip processes the optical signal received by the optical receiving component to obtain data.

[0173] Figure 20 is an optical communication device provided by an embodiment of the present application. As shown in Figure 20, it includes N single boards, such as single board 1, single board 2, ..., single board N as shown in Figure 20 (a). Each of the N single boards includes one or more optical modules described in Figure 18 or Figure 19. For example, single board 1 as shown in Figure 20 (b) specifically includes optical module 1, optical module 2, ..., optical module M. Each optical module includes a packaging structure. The specific form of the optical communication equipment is determined according to actual conditions, for example, it can be optical transmission equipment, optical access equipment, optical switching equipment, etc.

[0174] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

Claims

1. A packaging structure, characterized in that: The packaging structure is a transistor-shaped packaging structure, and the packaging structure includes: a tube cap having a transparent window disposed therein; A tube seat, cooperating with the tube cap to form a cavity structure; A horizontal cavity surface laser HCSEL chip is arranged in the cavity structure, the plane where the HCSEL chip is located is parallel to the bearing surface of the tube holder, and the optical signal emitted by the HCSEL chip is directed toward the transparent window; Wherein, a detection unit is provided in the HCSEL chip, and the detection unit is used to detect the power of the optical signal emitted by the HCSEL chip.

2. The packaging structure according to claim 1, characterized in that: The HCSEL chip is in the form of an electro-absorption modulated laser (EML), wherein: The HCSEL chip in the form of an EML includes a light emitting unit and an electro-absorption unit, wherein the light emitting unit is used to emit a light beam, and the electro-absorption unit is used to generate a photocurrent signal, and the photocurrent signal is used to modulate the light beam to generate a light signal emitted by the HCSEL chip, wherein the detection unit is the electro-absorption unit, and the power of the light signal emitted by the HCSEL chip is determined according to the photocurrent signal.

3. The packaging structure according to claim 1, characterized in that: The horizontal cavity surface laser chip is in a distributed feedback DFB form. In the HCSEL chip in the DFB form, the light detection unit is composed of a photoresistor.

4. The packaging structure according to claim 3, characterized in that: The horizontal cavity surface laser chip comprises a first electrode, a second electrode and a semiconductor substrate, wherein the semiconductor substrate comprises a first region, a second region and an isolation groove, the first region and the second region are respectively located on both sides of the isolation groove, wherein: The first region is provided with a light-emitting layer and a reflective inclined surface, wherein: The light emitting layer comprises a first light emitting edge and a second light emitting edge, the first light emitting edge is connected to one side of the semiconductor substrate, and the second light emitting edge is connected to the reflective inclined surface; The detection unit is arranged in the second area, wherein: The detection unit and the light-emitting layer are located in the same plane.

5. The packaging structure according to claim 4, characterized in that: The isolation groove includes a first side wall, and the first side wall is the reflective inclined surface.

6. The packaging structure according to claim 3, characterized in that: The horizontal cavity surface laser chip comprises a first electrode, a second electrode and a semiconductor substrate, wherein a light emitting layer, a reflection slope, a beam splitting unit and the light detection unit are arranged in the semiconductor substrate, wherein: The light emitting layer comprises a first light emitting edge and a second light emitting edge, wherein the first light emitting edge is connected to one side of the semiconductor substrate; The light splitting unit comprises an input port, a first output port and a second output port, the input port is connected to the second light emitting edge, the first output port is connected to the detection unit, and the second output port is connected to the reflective inclined surface.

7. The packaging structure according to any one of claims 1 to 6, characterized in that: The packaging structure also includes a refrigerator, and the HCSEL chip is flatly attached to the refrigerator.

8. The packaging structure according to any one of claims 1 to 7, characterized in that: in: The HCSEL chip comprises a light outlet, and the light outlet is a spherical structure; or The reflecting inclined surface is a spherical structure.

9. The packaging structure according to claim 8, characterized in that: in: The package structure is a light emitting device in a single-shot mode; or The packaging structure further includes one or more light emitting chips, and the packaging structure is a light emitting device in a multi-emission mode; or The packaging structure further includes one or more optical receiving chips, and the packaging structure is an optical transceiver device in a one-transmit-one-receive mode or a one-transmit-multiple-receive mode; or The packaging structure also includes one or more optical transmitting chips and one or more optical receiving chips. The packaging structure is an optical transceiver device in a multi-transmit and multi-receive mode.

10. An optical module, characterized in that: The invention comprises an electric chip and a packaging structure as claimed in any one of claims 1 to 9, wherein: The electrical chip is used to generate an electrical signal, and the electrical signal carries data; The HCSEL chip is used to generate an optical signal according to the electrical signal.

11. An optical module, characterized in that: The invention comprises an electric chip, a light receiving component and a packaging structure as claimed in any one of claims 1 to 9, wherein: The electrical chip is used to generate an electrical signal, and the electrical signal carries data; The HCSEL chip is used to generate an optical signal according to the electrical signal; The optical receiving component is used to receive another optical signal and convert it into another electrical signal; The electrical chip is further used to obtain another data according to the another electrical signal.

12. An optical communication device, characterized in that: It comprises N single boards, each of the N single boards comprises one or more optical modules as claimed in claim 10 or 11.

13. A packaging method, characterized in that: Used to prepare a packaging structure as described in any one of claims 1 to 9.

14. An optical chip, characterized in that: The device comprises a first electrode, a second electrode and a semiconductor substrate, wherein the semiconductor substrate comprises a first region, a second region and an isolation trench, the first region and the second region are respectively located on two sides of the isolation trench, wherein: The first region is provided with a light-emitting layer and a reflective inclined surface, wherein: The light emitting layer comprises a first light emitting edge and a second light emitting edge, the first light emitting edge is connected to one side of the semiconductor substrate, and the second light emitting edge is connected to the reflective inclined surface; A detection unit is provided in the second area, wherein: The detection unit and the light-emitting layer are located in the same plane.

15. The optical chip according to claim 14, characterized in that: The isolation groove includes a first side wall, and the first side wall is the reflective inclined surface.

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