High electron mobility transistor device and preparation method therefor

Abstract

The present application provides a high electron mobility transistor device and a preparation method therefor. The device comprises a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a source and a drain on the barrier layer, a stress modulation layer on the barrier layer, and a gate. The source and the drain extend in a first horizontal direction and are opposite in a second horizontal direction intersecting the first horizontal direction. The gate extends in the first horizontal direction and is located between the source and the drain in the second horizontal direction. The stress modulation layer extends in the first horizontal direction and is located between the source and the drain in the second horizontal direction. The stress modulation layer is an in-situ passivation layer having a stress modulation trench, the stress modulation trench extending in the first horizontal direction and running through the stress modulation layer in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction. The width of the stress modulation trench in the second horizontal direction is different at different positions in the first horizontal direction. At least a part of the gate is filled in the stress modulation trench.

Description

High electron mobility transistor device and preparation method thereof

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This patent application claims priority to Chinese patent application 202311182369.4 filed with the State Intellectual Property Office of China on September 13, 2023, and the disclosure of this Chinese patent application is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to the field of semiconductor technology, and in particular to a high electron mobility transistor (HEMT) device based on stress modulation. Background Art

[0004] As the third-generation wide-bandgap compound semiconductor devices, HEMT devices (especially GaN HEMT devices) have significant performance advantages in the millimeter wave field and have broad application prospects in large-capacity ultra-high-speed mobile communications, high-resolution imaging radar, confidential communications and other fields.

[0005] Summary of the Invention

[0006] In one aspect, a HEMT device is provided, comprising: a substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source and a drain located on the barrier layer, extending in a first horizontal direction and facing each other in a second horizontal direction intersecting the first horizontal direction; a stress modulation layer located on the barrier layer, extending in the first horizontal direction and located between the source and the drain in a second horizontal direction; and a gate extending in the first horizontal direction and located between the source and the drain in the second horizontal direction. The stress modulation layer is an in-situ passivation layer and has a stress modulation trench extending in the first horizontal direction and penetrating the stress modulation layer in a vertical direction perpendicular to the first and second horizontal directions. The width of the stress modulation trench in the second horizontal direction varies at different locations in the first horizontal direction, and at least a portion of the gate is filled in the stress modulation trench.

[0007] In another aspect, a method for manufacturing a HEMT device is provided, comprising: sequentially epitaxially growing a channel layer, a barrier layer, and a stress modulation material layer on a substrate to form an epitaxial structure comprising the substrate, the channel layer, the barrier layer, and the stress modulation material layer; forming a source and a drain on the epitaxial structure; forming a stress modulation trench in the stress modulation material layer that penetrates the stress modulation material layer to obtain a stress modulation layer, wherein the stress modulation trench has different widths at different positions along the extension direction of the source and drain; and forming a gate corresponding to the stress modulation trench. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The above and other features and advantages of the exemplary embodiments of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, which are intended to illustrate exemplary embodiments of the present disclosure and should not be interpreted as limiting the scope of the present disclosure.

[0009] FIG. 1 is a perspective view illustrating a HEMT device according to an example embodiment of the present disclosure.

[0010] FIG. 2 is a perspective view of the HEMT device shown in FIG. 1 with the gate structure omitted.

[0011] FIG. 3 is a plan view of a HEMT device in a case where a gate structure is omitted according to an example embodiment of the present disclosure.

[0012] 4A to 4C are plan views illustrating a HEMT device according to an example embodiment of the present disclosure in a case where a gate structure is omitted, showing different examples of width variations of the stress modulation trench.

[0013] 5A to 5D are schematic diagrams illustrating the effects of trench stress relaxation at different positions in a gate width direction in a HEMT device according to an example embodiment of the present disclosure.

[0014] FIG6 is a flowchart illustrating a method of manufacturing a HEMT device according to an example embodiment of the present disclosure.

[0015] 7 to 11 are perspective views illustrating a HEMT device at various process stages according to example embodiments of the present disclosure. DETAILED DESCRIPTION

[0016] Exemplary embodiments of the present application concept will be described in detail below with reference to the accompanying drawings.

[0017] However, the present invention can be exemplified in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein. In addition, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the present invention to those skilled in the art.

[0018] In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like elements.

[0019] It should be understood that, although the terms first, second, etc. have been used in this article to describe each element, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first element can be referred to as the second element, and similarly, the second element can be referred to as the first element, without departing from the scope of the exemplary embodiments of the present invention's application. As used in this article, the term "and / or" includes any and all combinations of one or more listed related items.

[0020] The terms used herein are only used to describe the exemplary embodiments set forth herein and are not intended to limit the present invention. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are also intended to include the plural forms. It should also be understood that when the terms "including", "provided with" and / or "having" are used in exemplary embodiments, they indicate the presence of the features, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, parts and / or combinations thereof.

[0021] Unless otherwise specified, all terms used herein, including descriptive terms or technical terms, should be understood to have meanings that are obvious to one of ordinary skill in the art. In addition, terms defined in common dictionaries and used in the following description should be understood to have meanings equivalent to those used in the relevant descriptions, and unless otherwise specified herein, the terms should not be understood as ideal or overly formal meanings.

[0022] Example embodiments of the inventive concept are described in detail below with reference to the accompanying drawings.

[0023] As higher application frequencies are achieved, the linearity problem of HEMT devices becomes increasingly serious. To improve the linearity of HEMT devices at high frequencies, various linearization technologies based on HEMT devices have been proposed, such as fin-type HEMT (Fin HEMT), dual-channel HEMT, and metal-insulator-semiconductor (MIS) HEMT technologies. Fin HEMT is a technology that integrates fins of different widths along the gate width direction, which can achieve a larger transconductance gate voltage swing, thereby significantly improving device linearity. Dual-channel HEMT is a technology that uses coupling between two channels to suppress the nonlinear variation of access resistance, thereby improving the device's output third-order intercept point (OIP3). MIS HEMT is a technology that adds a dielectric layer to traditional GaN HEMT, which can effectively suppress the generation of interface states, thereby improving device linearity.

[0024] However, these linearization techniques often introduce serious issues such as interface states, short-channel effects, and large parasitic capacitance, which severely limit the frequency characteristics of the device and make it difficult to meet the high-linearity requirements of higher-frequency applications. Therefore, new high-linearity technologies are being explored to improve the linearity and frequency characteristics of HEMT devices (especially GaN HEMT devices).

[0025] To this end, embodiments of the present disclosure provide a HEMT device based on local stress modulation under the gate and a method for manufacturing the same, so as to significantly improve the linearity of the device, especially the linearity in high frequency bands.

[0026] FIG1 is a perspective view of a HEMT device according to an exemplary embodiment of the present disclosure. FIG2 is a perspective view of the HEMT device shown in FIG1 omitting a gate structure. FIG3 is a plan view of the HEMT device according to an exemplary embodiment of the present disclosure omitting a gate structure. FIG4A to FIG4C are plan views of the HEMT device according to an exemplary embodiment of the present disclosure omitting a gate structure, illustrating different examples of variations in the width of the stress modulation trench.

[0027] 1 , a HEMT device according to an exemplary embodiment of the present disclosure may include a substrate 100, a channel layer 200 located on the substrate 100, a barrier layer 300 located on the channel layer 200, a stress modulation layer 400 located on the barrier layer 300, and a source S, a drain D, and a gate G. The source S and the drain D are located on the barrier layer 300, extend in a first horizontal direction D1, and face each other in a second horizontal direction D2 that intersects the first horizontal direction D1. The gate G extends in the first horizontal direction D1 and is located between the source S and the drain D in the second horizontal direction D2. The first horizontal direction D1 may be referred to as a "gate width direction." The second horizontal direction D2 may be referred to as a "gate length direction."

[0028] Referring to Figures 1 to 3, the stress modulation layer 400 is an in-situ passivation layer and has a stress modulation trench 410, wherein at least a portion of the gate G is filled in the stress modulation trench 410. The stress modulation trench 410 extends in a first horizontal direction D1 and penetrates the stress modulation layer 400 in a vertical direction D3. The stress modulation trench 410 has different widths in the second horizontal direction D2 at different locations in the first horizontal direction D1 (e.g., the locations indicated by lines AA, BB, and CC in Figure 5A). For example, referring to Figure 3, the stress modulation trench 410 may have widths W1 to Wn in the second horizontal direction D2 along the first horizontal direction D1 at different locations in the first horizontal direction D1. The stress modulation layer 410 may be located between the source S and the drain D in the second horizontal direction D2.

[0029] The width of the stress modulation groove 410 may gradually change along the first horizontal direction D1. For example, as shown in FIG2 and FIG3, the width of the stress modulation groove 410 in the second horizontal direction D2 gradually decreases from left to right along the first horizontal direction D1, that is, W1>W2>…>W n-1 >W n .

[0030] 4A to 4C illustrate other examples of how the width of the stress modulation groove varies. As shown in FIG4A , the width of the stress modulation groove 410 in the second horizontal direction D2 may first decrease and then increase from left to right along the first horizontal direction D1. As shown in FIG4B , the width of the stress modulation groove 410 in the second horizontal direction D2 may first increase and then decrease from left to right along the first horizontal direction D1. As shown in FIG4C , the width of the stress modulation groove 410 in the second horizontal direction D2 may increase from left to right along the first horizontal direction D1. However, the exemplary embodiments of the present disclosure are not limited thereto, as long as the width of the stress modulation groove 410 in the second horizontal direction D2 can gradually vary along the first horizontal direction D1.

[0031] As other examples, the width of the stress modulation trench 410 in the second horizontal direction D2 can be periodically or gradually varied along the first horizontal direction D1, using the width variation patterns shown in Figures 3 to 4C as a basic unit. For example, the stress modulation trench 410 can have a first portion in the second horizontal direction D2, where the width decreases along the first horizontal direction D1, as shown in Figure 3 , and a second portion in the second horizontal direction D2, where the width first increases and then decreases along the first horizontal direction D1, as shown in Figure 4B . For another example, the width of the stress modulation trench 410 in the second horizontal direction D2 can have one of the first and second portions, and the first and second portions can be periodically arranged.

[0032] In some embodiments, the width of the stress modulation groove 410 in the second horizontal direction D2 can range from 20 nm to 500 nm. For example, the width of the stress modulation groove 410 in the second horizontal direction D2 varies from 20 nm to 500 nm. For example, for the stress modulation groove 410 shown in FIG1 , it has different widths in the second horizontal direction D2 at different positions in the first horizontal direction D1. The maximum value of these different widths can be 500 nm, and the minimum value can be 20 nm. For example, the various values ​​of these different widths can be 50 nm, 80 nm, 100 nm, 120 nm, 150 nm, 200 nm, 300 nm, 400 nm, etc. Such a width range is conducive to improving linearity in the millimeter wave frequency band. In other embodiments, the range of the width of the stress modulation groove 410 in the second horizontal direction D2 can be designed according to the specific frequency band requirements to achieve a compromise between frequency and linearity.

[0033] In this document, the term "in-situ passivation layer" refers to a passivation layer formed by in-situ growth. In some embodiments, the in-situ passivation layer is an in-situ SiN layer. Compared to a passivation layer with an amorphous structure grown non-in-situ, the in-situ passivation layer may have a crystalline / quasi-crystalline structure, and the chemical bond between its material and the surface of the barrier layer is more stable and ideal, and it can cope with more complex stress environments without degradation, and can apply stress to the barrier layer. For example, the in-situ passivation layer may be an in-situ SiN layer with a crystalline or quasi-crystalline structure. For example, for the case where the in-situ passivation layer is an in-situ SiN layer and the barrier layer includes at least one of AlGaN, AlN, InAlN, ScAlN and InAlGaN, the lattice length of the in-situ SiN layer is greater than the lattice length of the barrier layer.

[0034] In some embodiments, the thickness of the stress modulation layer 400 in the vertical direction D3 is in a range of 2 nm to 200 nm. In some embodiments, the thickness of the stress modulation layer 400 in the vertical direction D3 is in a range of 2 nm to 30 nm. In some embodiments, the thickness of the stress modulation layer 400 in the vertical direction D3 is in a range of 50 nm to 200 nm.

[0035] In some embodiments, the upper surface of the stress modulation layer 400 is lower than the upper surface of each of the source S and the drain D.

[0036] By setting the stress modulation layer 400 to have an appropriate thickness in the vertical direction D3, the stress of the stress modulation layer 400 can be primarily applied to the barrier layer 300 located thereunder, preventing stress from dissipating upward. Furthermore, the thickness of the stress modulation layer 400 can be used to adjust the carrier concentration range below the gate of the HEMT device.

[0037] In some embodiments, the stress modulation trench 410 can be closer to the source S and farther from the drain D. In this case, the device breakdown voltage can be increased, making the HEMT device suitable for more demanding applications. A metal interconnect layer (not shown) can be further provided on the source S and drain D.

[0038] In some embodiments, the barrier layer 300 comprises at least one of AlGaN, AlN, InAlN, ScAlN, and InAlGaN. In some embodiments, the channel layer 200 comprises at least one of GaN, InGaN, and AlGaN with a low aluminum content, such as doped GaN. In some embodiments, the substrate 100 comprises SiC / sapphire / high-resistance Si.

[0039] In some embodiments, the gate G has a T-shaped floating gate structure, in which a cross-section of the gate G taken along the gate length is T-shaped, and the gate G has a floating portion separated from the underlying layer structure (e.g., the barrier layer 300 and the in-situ passivation layer 400). Such a T-shaped floating gate structure can have low insertion loss, effectively reduce the parasitic capacitance of the device, and improve the frequency characteristics of the entire device.

[0040] The principle of achieving high linearity in a HEMT device according to an embodiment of the present disclosure will be described with reference to Figures 5A to 5D. Figure 5A is a perspective view of a HEMT device according to an embodiment of the present disclosure, which is substantially the same as Figure 1 except for lines AA, BB, and CC. Figures 5B to 5D are cross-sectional views of the HEMT device according to an embodiment of the present disclosure, taken along lines AA, BB, and CC of Figure 5A, respectively.

[0041] 5B to 5D illustrate the effect of the width of the stress modulation trench 410 on stress release at different locations along the first horizontal direction D1. Because the stress modulation layer 400 is an in-situ passivation layer and the stress modulation trench 410 has different widths at different locations along the first horizontal direction D1, the stress applied to the barrier layer 300 by the stress modulation layer 400 varies at different locations along the first horizontal direction D1.

[0042] As shown in FIG. 5B to FIG. 5D , as the width of the stress modulation trench 410 in the second horizontal direction D2 gradually decreases along the first horizontal direction D1 (ie, W A >W B >W C ), the length of the gate G in the second horizontal direction D2 gradually decreases, and the carrier concentration (e.g., two-dimensional electron gas 2DEG) below the gate of the HEMT device gradually increases. As the carrier concentration below the gate increases, the threshold voltage of the HEMT device shifts negatively, and the HEMT device gradually transitions from enhancement-mode turn-on to depletion-mode turn-on, resulting in a flatter transconductance profile for the entire HEMT device and improved linearity.

[0043] For example, as shown in FIG. 5B , at the line AA position in FIG. 5A , the width W of the stress modulation trench 410 in the second horizontal direction D2 is A The gate G is larger and the length of the gate is longer (compared with the positions of other lines BB and CC). Therefore, the corresponding local stress release is larger, the carrier concentration under the gate is lower, and the threshold voltage is shifted toward the positive direction based on the conventional planar device.

[0044] As shown in FIG. 5C , at the position of line BB in FIG. 5A , the width of the stress modulation trench 410 in the second horizontal direction D2 is reduced to W. B, the length of the gate G is correspondingly reduced, the local stress release is reduced, and the carrier concentration under the gate is increased.

[0045] As shown in FIG. 5D , at the position of line CC in FIG. 5A , the width of the stress modulation trench 410 in the second horizontal direction D2 is further reduced to W. C The length of the gate G is correspondingly further reduced, further reducing local stress release and increasing the carrier concentration below the gate (local stress release is reduced to the point where the 2DEG below the gate is connected). This shifts the threshold voltage negatively compared to conventional planar devices. When gate voltage is applied to gate G, the device portion with a smaller gate length turns on first, while the device portion with a larger gate length turns on later, gradually turning on various portions of the entire device across the gate width. This integrates device portions with different threshold voltages throughout the HEMT device, not only broadening the device's transconductance profile but also making the HEMT's transconductance flatter across the entire gate voltage swing, thereby improving linearity and ensuring a wider linear operating range.

[0046] In the HEMT device disclosed herein, a stress modulation layer, serving as an in-situ passivation layer, and stress modulation trenches of varying widths extending through the stress modulation layer are used to apply position-dependent stress to the barrier layer (particularly the region of the barrier layer located below the gate). As the width of the stress modulation trenches along the gate length varies in the gate width direction, the stress applied by the stress modulation layer to the barrier layer varies, causing the threshold voltage of the HEMT device to vary in the gate width direction. This stress modulates the threshold voltage of the HEMT device, significantly improving its linearity and enabling high linearity at higher frequencies. Compared to existing linearization technologies, this stress-modulated HEMT device offers a wider threshold voltage adjustment range, ensuring high linearity at higher frequencies while also offering advantages such as ease of manufacturing, high energy efficiency, and low cost.

[0047] As described above, in the HEMT device of the present disclosure, by applying appropriate local stress to the region below the gate of the barrier layer, the distribution and movement of carriers in the device can be effectively modulated, cross-modulation distortion and nonlinear characteristics can be reduced, and high linearity can be achieved at higher frequency bands.

[0048] The HEMT device according to the embodiments of the present disclosure can be applied to various high-frequency application scenarios, especially in amplifier modules for 5G millimeter-wave base stations, automotive millimeter-wave radars, and multi-device collaborative communications.

[0049] The following describes a method for manufacturing a HEMT device according to an embodiment of the present disclosure with reference to Figures 6 to 11. Figure 6 is a flow chart illustrating a method for manufacturing a HEMT device according to an exemplary embodiment of the present disclosure. Figures 7 to 11 are perspective views illustrating a HEMT device according to an exemplary embodiment of the present disclosure at various stages of the manufacturing process. It should be noted that the perspective views of Figures 7 to 11 ultimately correspond to the HEMT device shown in Figure 1. Therefore, any overlap with the corresponding descriptions of Figures 1 to 4C will be omitted below.

[0050] 6 , the method for manufacturing a HEMT device according to an embodiment of the present disclosure may include steps S10 to S40 .

[0051] In step S10 , an epitaxial structure including a substrate 100 , a channel layer 200 , a barrier layer 400 and a stress modulation material layer 400 ′ is formed. The formed epitaxial structure may be as shown in FIG. 7 .

[0052] In this step, the channel layer 200, barrier layer 300, and stress modulation material layer 400' can be epitaxially grown sequentially on the substrate 100 by methods such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). After the barrier layer 300 is formed, the stress modulation material layer 400' is in-situ grown on the barrier layer 300. The stress modulation material layer 400' can be a passivation layer comprising silicon nitride. As an example, the specific growth process of the in-situ silicon nitride stress modulation material layer 400' is described as follows. Using MOCVD in a vacuum environment, the sample (including the structure of the sequentially stacked substrate 100, channel layer 200, and barrier layer 300) is heated to a temperature range of 1250-2200°C (the higher the temperature, the more crystalline the SiN. A heating temperature of 1500°C can transform the SiN from α-SiN to β-SiN, which is more stable). SiH4 and NH3 are used as the reaction gas source, and SiN is generated by a high-temperature reaction. Since the process of growing epitaxial material and SiN is in-situ growth, the chemical bond of SiN at the interface between barrier layer 300 and stress modulation material layer 400' is better combined with the surface of barrier layer 300 (such as AlGaN), and the lattice length of the grown α- or β-SiN is about Much larger than the lattice length of the GaN system This can apply significant compressive stress to the barrier layer 300, thereby affecting the material's two-dimensional electron gas concentration. Furthermore, due to the high-temperature growth environment, the SiN contains a lower content of Si-H bonds, significantly optimizing the trapping characteristics of the HEMT device and achieving more stable RF performance.

[0053] In addition, it is clear to those skilled in the art that, in some embodiments, the epitaxial structure may also include common structural layers such as a nucleation layer and a buffer layer, which will not be described in detail here.

[0054] In step S20 , a source and a drain are formed on the epitaxial structure obtained in step S10 .

[0055] In this step, highly conductive source and drain electrodes can be formed by methods such as ion implantation or annealing. For example, source and drain patterns can be photolithographically patterned and source and drain metals deposited, followed by thermal annealing to form ohmic contacts, resulting in source S and drain D. The resulting structure is shown in Figure 8.

[0056] In step S30 , stress modulation grooves 410 are formed in the stress modulation material layer 400 ′ to obtain the stress modulation layer 400 .

[0057] In this step, stress modulation grooves 410 may be formed in the stress modulation material layer 400 ′ by photolithography and plasma etching, thereby obtaining a stress modulation layer 400 having stress modulation grooves 410 , as shown in FIG. 9 and FIG. 10 .

[0058] For example, as shown in FIG6 , step S30 may include steps S31 and S32 . In step S31 , stress modulation trench lithography is performed, and the trench width may vary from 20 nm to 500 nm. In step S32 , plasma etching, such as inductively coupled plasma-reactive ion etching (ICP-RIE), is used to form stress modulation trenches 410 with varying widths to perform local stress modulation under the gate.

[0059] In step S40 , a gate G is formed corresponding to the stress modulation trench.

[0060] In this step, a gate G is formed between the source S and drain D, with a portion of the gate G filling the stress modulation trench 410. Because the width of the stress modulation trench 410 in the second direction D2 gradually changes along the first horizontal direction D1, the length of the gate G in the second direction D2 also gradually changes along the first horizontal direction D1 (i.e., the gate width direction). Figure 11 shows the gate G separated from the stress modulation trench 410, but this is only to more clearly illustrate the gradual length change of the gate G and the gradual width change of the trench 410. When the gate G is actually formed, the gate G does not need to undergo the process of separation from the trench 410. The device after the gate G is formed can be shown in Figure 1.

[0061] For example, the gate G may have a floating T-shaped structure, as shown in FIG11 . In this case, step S40 may include steps S41 and S42 (see FIG6 ). In step S41 , a low-insertion-loss floating T-shaped gate metal is evaporated to form a floating gate structure with a gradually varying length. In step S42 , the gate metal is stripped to form a floating T-shaped gate G with a gradually varying gate length.

[0062] In the HEMT device manufacturing method disclosed herein, a stress modulation material layer serving as an in-situ passivation layer is formed through in-situ growth methods such as MOCVD. Source and drain electrodes are then formed, and the stress modulation material layer is etched to form stress modulation trenches of varying widths. This manufacturing method enables the resulting HEMT device to exhibit high linearity at higher frequencies. In particular, compared to methods that first form the source and drain electrodes and then form a SiN passivation layer ex-situ through processes such as PECVD, HEMT devices manufactured using the methods of the disclosed embodiments exhibit higher linearity while maintaining a wider linear operating range.

[0063] Furthermore, the manufacturing method according to the disclosed embodiments does not involve etching of the barrier layer or channel layer, thus preventing material interface damage. This device achieves high linearity with minimal defect effects, making it particularly suitable for communications applications under high gate voltage and high power conditions. Furthermore, this method utilizes a planar process, resulting in simple implementation, high compatibility with existing processes, and low cost.

[0064] Various advantages and effects of each exemplary embodiment are not limited to the above description, and can be easily understood through explanation of specific embodiments in the present disclosure.

[0065] While various example embodiments have been shown and described above, it will be apparent to those skilled in the art that many modifications and changes may be made without departing from the scope of the inventive concept as defined by the claims.

Claims

1. A high electron mobility transistor device, comprising: substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source electrode and a drain electrode, the source electrode and the drain electrode being located on the barrier layer, extending in a first horizontal direction, and being arranged opposite to each other in a second horizontal direction intersecting the first horizontal direction; a stress modulation layer, which is located on the barrier layer, extends in the first horizontal direction, and is located between the source and the drain in the second horizontal direction; as well as a gate extending in the first horizontal direction and located between the source and the drain in the second horizontal direction, Wherein, the stress modulation layer is an in-situ passivation layer and has a stress modulation groove, the stress modulation groove extends in the first horizontal direction and penetrates the stress modulation layer in a vertical direction perpendicular to the first horizontal direction and the second horizontal direction, and at different positions in the first horizontal direction, the width of the stress modulation groove in the second horizontal direction is different, and at least a portion of the gate is filled in the stress modulation groove.

2. The high electron mobility transistor device according to claim 1, wherein: The width of the stress modulation trench gradually changes along the first horizontal direction.

3. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove ranges from 20 nm to 500 nm.

4. The high electron mobility transistor device according to claim 1, wherein: The in-situ passivation layer includes in-situ silicon nitride having a crystalline or quasi-crystalline structure.

5. The high electron mobility transistor device according to claim 1, wherein: The thickness of the stress modulation layer in the vertical direction ranges from 2 nm to 60 nm.

6. The high electron mobility transistor device according to claim 2, wherein: At different positions in the first horizontal direction, the stress applied by the stress modulation layer to the barrier layer is different.

7. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation trench in the second horizontal direction decreases along the first horizontal direction.

8. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove in the second horizontal direction first increases and then decreases along the first horizontal direction.

9. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove in the second horizontal direction first decreases and then increases along the first horizontal direction.

10. The high electron mobility transistor device according to claim 2, wherein: The stress modulation groove has a first portion whose width in the second horizontal direction decreases along the first horizontal direction and a second portion whose width in the second horizontal direction first increases and then decreases along the first horizontal direction, or The stress modulation groove has one of the first portion and the second portion, and the one is periodically arranged.

11. The high electron mobility transistor device according to claim 1, wherein: The barrier layer includes at least one of AlGaN, AlN, InAlN, ScAlN and InAlGaN.

12. The high electron mobility transistor device according to claim 1, wherein: The channel layer includes at least one of GaN, InGaN, and AlGaN with a low aluminum composition.

13. The high electron mobility transistor device according to claim 1, wherein: The gate has a T-shaped floating gate structure.

14. The high electron mobility transistor device according to claim 13, wherein: The gate has a floating portion spaced apart from the barrier layer and the in-situ passivation layer.

15. The high electron mobility transistor device according to claim 1, wherein: The level of the upper surface of the stress modulation layer is lower than the level of the upper surface of each of the source and the drain.

16. A method for manufacturing a high electron mobility transistor device, comprising: epitaxially growing a channel layer, a barrier layer and a stress modulation material layer on a substrate in sequence to form an epitaxial structure including the substrate, the channel layer, the barrier layer and the stress modulation material layer; forming a source and a drain on the epitaxial structure; forming a stress modulation groove penetrating the stress modulation material layer in the stress modulation material layer to obtain a stress modulation layer, wherein the stress modulation groove has different widths at different positions in the extension direction of the source and the drain; as well as A gate is formed corresponding to the stress modulation trench.

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