Manufacturing of infrared detection device

Abstract

The present application relates to a manufacturing method for an infrared detector device, which comprises: providing a plurality of photoelectric detectors, and a wafer on which a plurality of read-out circuit units are integrated, a first micro-bump being provided on the front surface of each photoelectric detector, and a second micro-bump being provided on the side of each read-out circuit unit located on the front surface of the wafer; correspondingly arranging the plurality of photoelectric detectors onto the read-out circuit units respectively, the front surfaces of the photoelectric detectors facing the front surface of the wafer, such that the first micro-bumps are correspondingly connected to the second micro-bumps, thereby forming an intermediate assembly; and cutting the intermediate assembly into a plurality of infrared detection devices, each infrared detection device comprising one photoelectric detector and a corresponding read-out circuit unit. The plurality of photoelectric detectors and the plurality of read-out circuit units have different thermal expansion coefficients since substrate materials thereof are different.

Description

Preparation of infrared detection devices Technical Field

[0001] The present application relates to the field of infrared detection technology, and in particular to the preparation of infrared detection devices. Background Art

[0002] Typically, heterojunction bonding is required to electrically connect an infrared photodetector to a read-out integrated circuit (ROIC). To date, the vast majority of heterojunction-bonded infrared focal plane detectors (FPDs) in China and abroad utilize conductive pillar interconnects, such as indium pillars. This involves flip-chip bonding, connecting the conductive bumps on the infrared photodetector to the conductive bumps on the read-out integrated circuit (ROIC), to form a FPD module.

[0003] Among them, because the infrared photodetector and the readout circuit unit are made of different substrate materials, there is a difference in the thermal expansion coefficients of the infrared photodetector and the readout circuit unit. This results in a difference in the expansion degree of the wafer integrated with the infrared photodetector and the wafer integrated with the readout circuit unit when heated to the same temperature. Therefore, in the wafer-to-wafer bonding process, if traditional thermal compression bonding is used, the temperature conduction during bonding will cause a positional offset between the die with a single infrared photodetector and the die with the corresponding readout circuit unit. Obviously, this positional offset will reduce the alignment accuracy between the infrared photodetector and the corresponding readout circuit unit, thereby affecting the final product yield, especially when the density of conductive pillars on the wafer is relatively high.

[0004] Based on the above, in related technologies, the entire wafer (including the wafer with integrated infrared photodetectors and the wafer with integrated readout circuit units) is usually cut into individual dies first, and then die-to-die bonding is achieved through thermal compression bonding. However, this method seriously affects production efficiency.

[0005] Summary of the Invention

[0006] The present application provides a method for preparing an infrared detection device, comprising: providing a plurality of photodetectors and a wafer integrated with a plurality of readout circuit units, wherein the front surface of each photodetector is provided with one or more first microbumps, and each readout circuit unit is provided with one or more second microbumps on a side located on the front surface of the wafer, wherein the substrate material of the plurality of photodetectors is different from the substrate material of the plurality of readout circuit units; arranging the plurality of photodetectors on corresponding readout circuit units with their front surfaces facing the front surface of the wafer, such that the first microbumps are connected to the second microbumps correspondingly, thereby forming an intermediate component; and dividing the intermediate component to form a plurality of infrared detection devices, each of the infrared detection devices comprising one photodetector and a corresponding readout circuit unit. The thermal expansion coefficients of the photodetectors and the corresponding readout circuit units are different.

[0007] In some embodiments, the radial dimension of each of the first micro-bumps is less than or equal to 5 μm, and the radial dimension of each of the second micro-bumps is less than or equal to 5 μm.

[0008] In some embodiments, a distance between two adjacent first micro-bumps is less than or equal to 5 μm, and a distance between two adjacent second micro-bumps is less than or equal to 5 μm.

[0009] In some embodiments, the method of placing the front sides of the multiple photodetectors toward the front side of the wafer and arranging them on corresponding readout circuit units includes: using a bonding device to absorb the multiple photodetectors, and placing the front side of each photodetector toward the front side of the wafer in turn, and arranging them on corresponding readout circuit units.

[0010] In some embodiments, a bonding device is used to pre-bond each photodetector to a readout circuit unit at room temperature using a preset pressure.

[0011] In some embodiments, after each photodetector is pre-bonded to a readout circuit unit at room temperature by a preset pressure, the method includes: using a flat pressing part with a first preset temperature to bond multiple photodetectors and multiple readout circuit units for a first preset time to achieve corresponding connection between the first micro-bumps and the second micro-bumps.

[0012] In some embodiments, the first preset temperature is 100° C.-140° C., and the first preset time is 5 min-15 min.

[0013] In some embodiments, after pre-bonding each photodetector to a readout circuit unit at room temperature using a preset pressure, the method includes further bonding and fixing the pre-bonded photodetector and the readout circuit unit using reflow soldering.

[0014] In some embodiments, the reflow soldering temperature is a second preset temperature, the reflow soldering time is a second time, the second preset temperature is 140° C.-200° C., and the second time is 5 min-15 min.

[0015] In some embodiments, after placing the front sides of the multiple photodetectors toward the front side of the wafer and placing them on corresponding readout circuit units so that the first microbumps are correspondingly connected to the second microbumps, the method further includes: filling a base glue between each of the photodetectors and the corresponding readout circuit unit.

[0016] In some embodiments, each of the photodetectors includes a substrate and a main body arranged on the substrate, and the substrate is located on the side where the back side of the photodetector is located; after filling the primer between each of the photodetector and the corresponding readout circuit unit, before the intermediate component is cut, the method includes: thinning the substrate of the photodetector from the back side of the photodetector.

[0017] In some embodiments, the substrate of the photodetector is thinned to less than or equal to 100 μm.

[0018] In some embodiments, the photodetector is an infrared photodetector.

[0019] In some embodiments, the infrared detection device is an infrared focal plane detector.

[0020] According to the preparation method of the infrared detection device provided in the embodiment of the present application, a plurality of photodetectors are respectively bonded to corresponding readout circuit units in a wafer having a plurality of readout circuit units, and then cut into pieces after bonding to form a plurality of infrared detection devices. This effectively realizes a die-to-wafer bonding process, thereby significantly improving the production efficiency of the infrared detection device compared with the die-to-die bonding process, while also effectively ensuring the final product yield, especially in the case of dense conductive columns with different material expansion coefficients of the photodetectors and the readout circuit units.

[0021] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. The drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative work.

[0023] FIG1 is a flow chart of a method for preparing an infrared detection device provided in one embodiment of the present application.

[0024] 2 to 7 are manufacturing process diagrams of a method for manufacturing an infrared detection device provided in one embodiment of the present application.

[0025] 8 to 13 are manufacturing process diagrams of another method for manufacturing an infrared detection device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0026] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numbers in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.

[0027] Although in other technical fields, for products where the base materials of the two components to be bonded are the same (for example, the base material or the main base material is silicon), the preparation of the corresponding products can be achieved by bonding grains to wafers, or even bonding wafers to wafers. However, in the field of infrared detection technology, due to the difference between the thermal expansion coefficients of the base materials of the infrared photodetector and the readout circuit unit, as well as the structural characteristics of the infrared photodetector and the readout circuit unit themselves (such as the conductive bumps are relatively small and the density is relatively high, etc.), it is currently impossible to achieve the bonding of a single infrared photodetector to a wafer. In fact, in the relevant technology, the bonding method of the infrared photodetector and the readout circuit unit is to first cut the entire wafer (including the wafer integrated with the infrared photodetector and the wafer integrated with the readout circuit unit) into single grains, and then achieve single grain to single grain bonding by thermal compression bonding. Obviously, this method seriously affects production efficiency.

[0028] The present application provides a method for preparing an infrared detection device, which includes: providing a plurality of photodetectors and a wafer integrated with a plurality of readout circuit units, wherein the front surface of each photodetector is provided with a first micro-bump, and each readout circuit unit is provided with a second micro-bump on a side of the front surface of the wafer; by facing the front surface of the plurality of photodetectors toward the front surface of the wafer, the plurality of photodetectors are respectively arranged on a corresponding readout circuit unit in the wafer, so that the first micro-bump is connected to the second micro-bump to form an intermediate component; and the intermediate component is cut to form a plurality of infrared detection devices, each of which includes a photodetector and a corresponding readout circuit unit. The substrate material of the plurality of photodetectors is different from the substrate material of the plurality of readout circuit units, so that the thermal expansion coefficient of the plurality of photodetectors is different from the thermal expansion coefficient of the plurality of readout circuit units. The above-mentioned method for preparing infrared detection devices effectively implements die-to-wafer bonding for infrared photodetectors, thereby ensuring the bonding effect while also improving the production efficiency of infrared detection devices. This method bonds multiple photodetectors to corresponding readout circuit units in a wafer having multiple readout circuit units, and then divides the wafer into multiple infrared detection devices after bonding.

[0029] The embodiments provided in this application are described in detail below with reference to Figures 1 to 13 .

[0030] Referring to FIG. 1 , the present application provides a method for manufacturing an infrared detection device, which includes the following steps S101 to S105 .

[0031] In step S101, a plurality of photodetectors and a wafer integrated with a plurality of readout units are provided, wherein each of the photodetectors is provided with one or more first microbumps on the front surface thereof, and each of the readout circuit units is provided with one or more second microbumps on the side located on the front surface thereof.

[0032] In step S103, the front sides of the plurality of photodetectors are oriented toward the front side of the wafer and are respectively arranged on corresponding readout circuit units, so that the first micro-bumps are correspondingly connected to the second micro-bumps to form an intermediate component.

[0033] In step S105, the intermediate assembly is divided into a plurality of infrared detection devices, each of which includes a photodetector and a corresponding readout circuit unit, wherein the thermal expansion coefficient of the photodetector is different from the thermal expansion coefficient of the corresponding readout circuit unit.

[0034] First, please describe in detail one embodiment of the method for manufacturing the infrared detection device described above with reference to FIG. 2 to FIG. 7 .

[0035] As shown in FIG1 , a plurality of photodetectors 1 and a wafer 100 are provided. Each photodetector 1 has a front surface 12 and a back surface 13. The front surface 12 of the photodetector 1 is provided with one or more first microbumps 11. The wafer 100 includes a plurality of readout circuit units 2. The wafer 100 has a front surface 101 and a back surface 102. Each readout circuit unit 2 is provided with one or more second microbumps 21 on one side of the front surface 101 of the wafer.

[0036] In some embodiments, the photodetector 1 is an infrared photodetector.

[0037] The base material or main material of the infrared photodetector is indium phosphide (InP) or type-2 superlattice (T2SL).

[0038] The base material or main material of the readout circuit unit is silicon. The wafer 100 is correspondingly a silicon wafer.

[0039] Since the thermal expansion coefficient of silicon is different from that of indium phosphide or type-II superlattice, the thermal expansion coefficient of the photodetector 1 is different from that of the readout circuit unit 2 .

[0040] The first micro-bumps 11 and the second micro-bumps 21 mentioned here are conductive bumps, and the materials of the first micro-bumps 11 and the second micro-bumps 21 can be indium. In other embodiments, the materials of the first micro-bumps 11 and the second micro-bumps 21 can also be other conductive materials such as copper and tin.

[0041] The front surface 12 of the photodetector 1 may be provided with a large number of first micro-bumps 11 , and the large number of first micro-bumps 11 are spaced apart from each other.

[0042] Here, the shape of the photodetector 1 perpendicular to the thickness direction can be a rectangle, a square or a similar shape, and its length and width are generally several millimeters.

[0043] The photodetector 1 described herein is a photodetector having a high density of micro-bumps. Specifically, the first micro-bumps 11 on the front surface of the photodetector 1 are arranged at a high density. The front surface of a photodetector 1 may be provided with tens of thousands, or even hundreds of thousands, or even millions of first micro-bumps 11. Specifically, the spacing between any two adjacent first micro-bumps 11 may be set to be less than or equal to 5 μm.

[0044] The first micro bumps 11 mentioned here are very small conductive bumps. In some embodiments, the radial size of the first micro bumps 11 mentioned here is less than or equal to 5 μm.

[0045] The wafer 100 is integrated with a plurality of readout circuit units 2 divided along the dotted lines shown in Fig. 1. Accordingly, each readout circuit unit 2 may be provided with a large number of second micro bumps 21, which are spaced apart from each other.

[0046] Similar to the photodetector 1 , the shape of the readout circuit unit 2 perpendicular to the thickness direction can be a rectangle, a square, or the like, and its length and width are generally several millimeters.

[0047] Similarly, the readout circuit unit 2 referred to here is a readout circuit unit having a high density of micro-bumps. That is, the second micro-bumps 21 on the front surface of the readout circuit unit 2 are arranged at a high density. The front surface of a readout circuit unit 2 can be provided with tens of thousands of second micro-bumps 21, or even hundreds of thousands or millions of second micro-bumps 21. Specifically, the spacing between any two adjacent second micro-bumps 21 can be set to be less than or equal to 5μm.

[0048] The second micro bumps 21 mentioned here are very small conductive bumps. In some embodiments, the radial dimension of the second micro bumps 21 is less than or equal to 5 μm.

[0049] Referring to FIG. 2 , in some embodiments, in step S103, the front surfaces 12 of the plurality of photodetectors 1 are oriented toward the front surface 101 of the wafer 100 and are disposed on a readout circuit unit 2, respectively. This includes: using a bonding device to absorb the plurality of photodetectors 1, and sequentially oriented the front surface of each photodetector 1 toward the front surface of the wafer 100, and disposed on a corresponding readout circuit unit 2, so that the first microbump 11 of each photodetector 1 is correspondingly connected to the second microbump 21 of the corresponding readout circuit unit 2. Each first microbump 11 is correspondingly connected to a corresponding second microbump 21. Thus, a hollow region having one or more first microbumps 11 and one or more corresponding second microbumps 21 is formed between each photodetector 1 and the corresponding readout circuit unit 2.

[0050] In some embodiments, a bonding device is used to pre-bond each photodetector 1 to a readout circuit unit 2 at room temperature using a preset pressure.

[0051] Performing pre-bonding at room temperature prevents inaccurate alignment between the photodetector 1 and the readout circuit unit 2 due to different thermal expansion coefficients, which is beneficial to improving the alignment accuracy between the two, allowing good bonding between the photodetectors 1 with a high density of first micro-bumps 11 and the wafer 100 integrated with the readout circuit unit 2 with a high density of second micro-bumps 21. In this way, not only can the bonding strength between the multiple photodetectors 1 and the wafer 100 integrated with the multiple readout circuit units 2 be guaranteed, but the alignment accuracy between the first micro-bumps 11 and the second micro-bumps 21 can also be ensured, effectively avoiding problems such as poor bonding caused by low alignment accuracy of the small-sized and high-density first micro-bumps 11 and the second micro-bumps.

[0052] The pre-bonding can improve the alignment accuracy of the first micro-bumps 11 and the second micro-bumps 21 while ensuring that the first micro-bumps 11 and the second micro-bumps 21 have a certain bonding strength.

[0053] Please refer to Figure 4. In some embodiments, after each photodetector 1 is pre-bonded to a readout circuit unit 2 at room temperature by a preset pressure, the method includes the following steps: using a flat pressing piece 3 with a first preset temperature to bond multiple photodetectors 1 and multiple readout circuit units 2 for a first preset time length to achieve corresponding connection between the first microbumps 11 and the second microbumps 21, so that the first microbumps 11 and the second microbumps 21 are connected more firmly, thereby improving the bonding strength between the first microbumps 11 and the second microbumps 21.

[0054] In some embodiments, the first preset temperature is 100° C.-140° C., and the first preset time is 5 min-15 min.

[0055] The pressing part 3 can be a plate-like or sheet-like part with high flatness, and its size can be consistent with the size of the wafer 100 (equal or approximately equal). The pressing part 3 can be a sapphire sheet or a silicon sheet. The flatness of the pressing part 3 is ≤2μm. Specifically, when performing the bonding operation, the pressing part 3 is placed on the side where the back surface 13 of the photodetector 1 is located, and the pressing part 3 is squeezed toward the wafer 100. During the squeezing process, the pressing part 3 can have a first preset temperature, so that the first micro-bump and the second micro-bump between the photodetector 1 and the readout circuit unit 2 are in a molten state. This bonding method can make the photodetector 1 and the readout circuit unit 2 well aligned, and can well improve the bonding strength between the photodetector 1 and the readout circuit unit 2, which is beneficial to make the bonding force between the photodetector 1 and the readout circuit unit 2 at different positions more uniform, which is beneficial to improve the bonding effect.

[0056] It is understandable that the pressing member 3 can be heated to the first preset temperature by a heating device.

[0057] Here, a press-fitting member 3 is used to perform synchronous press-bonding on the plurality of photodetectors 1 and the plurality of readout circuit units 2 of the wafer 100 , which is beneficial to improving the bonding efficiency.

[0058] Please refer to Figure 5. In some embodiments, after the front sides of multiple photodetectors 1 are placed on the corresponding readout circuit units 2 with their front sides facing the front side 101 of the wafer 100 so that the first micro-bumps 11 and the second micro-bumps 21 are correspondingly connected, the method further includes the following step: filling a base glue 4 between each of the photodetectors 1 and the corresponding readout circuit unit 2.

[0059] The base glue 4 is filled in the hollow area between each photodetector 1 and the corresponding readout circuit unit 2, which can wrap the first micro-bump 11 of the photodetector 1 and the second micro-bump 21 of the corresponding readout circuit unit 2 to fix the first micro-bump 11 and the second micro-bump 21, that is, to support the photodetector 1 and the corresponding readout circuit unit 2.

[0060] In some embodiments, each of the photodetectors 1 includes a substrate and a main body arranged on the substrate, and the substrate is located on the side where the back of the photodetector 1 is located; after filling the primer 4 between each of the photodetectors 1 and the corresponding readout circuit unit 2, before cutting the intermediate component, the method includes: thinning the substrate of the photodetector 1 from the back of the photodetector 1.

[0061] In some embodiments, the substrate of the photodetector 1 is thinned to less than or equal to 100 μm to ensure that light can better enter the interior of the photodetector from the back surface 13 of the photodetector 1 , thereby ensuring the sensing efficiency of the photodetector.

[0062] At this point, the intermediate assembly 1000 shown in FIG. 6 is formed through the aforementioned steps.

[0063] The intermediate assembly 1000 and similar intermediate assemblies are infrared detector assemblies that have completed DTW (die to wafer bonding).

[0064] 6 and 7 , in step S105 , the intermediate component 1000 is cut into pieces to form a plurality of infrared detection devices 1001 . Each infrared detection device 1001 includes a photodetector 1 and a corresponding readout circuit unit 2 .

[0065] In some embodiments, the infrared detection device 1001 is an infrared focal plane detector.

[0066] Based on the above description, for a photodetector 1 with different thermal expansion coefficients and a wafer having multiple readout circuit units 2, and the photodetector 1 has a high-density first micro-bump 11, and the readout circuit unit 2 has a high-density second micro-bump 21, by bonding the multiple photodetectors 1 to the multiple readout circuit units 2 in the wafer respectively, and then cutting them after bonding to form multiple infrared detection devices, it is beneficial to ensure the bonding effect while improving the production efficiency of the infrared detection devices.

[0067] It should be noted that, in the above embodiment, the photoelectric detector 1 is an infrared photoelectric detector.

[0068] Next, another embodiment of the method for manufacturing the infrared detection device will be described in detail with reference to FIG. 8 to FIG. 13 .

[0069] The embodiment shown in FIG. 2 to FIG. 7 is generally similar to the embodiment shown in FIG. 2 to FIG. 7 , and similar or identical aspects may be referred to the above-mentioned related description. The difference is that, in step S103, after each photodetector 1 is pre-bonded to a readout circuit unit 2 at room temperature using a preset pressure, the method includes: bonding and fixing each photodetector 1 and the corresponding readout circuit unit 2 using a reflow soldering method, so that the first micro-bump 11 of the photodetector 1 and the second micro-bump 21 of the corresponding readout circuit unit 2 are more firmly connected.

[0070] In some embodiments, the welding temperature of reflow soldering is a second preset temperature, and the welding time of reflow soldering is a second time. The second preset temperature is 140℃-200℃, and the second time is 5min-15min, which can achieve better effect by fixing the first micro-bump 11 and the second micro-bump 21 in connection.

[0071] As shown in FIG. 10 , the area indicated by the dotted line 5 may be a reflow furnace area for reflow soldering.

[0072] In this application, the structural embodiments and method embodiments may complement each other if they do not conflict.

[0073] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The terms "plurality" and "several" refer to two or more, unless otherwise clearly defined.

[0074] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0075] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A method for preparing an infrared detection device, characterized in that: include: A plurality of photodetectors and a wafer integrated with a plurality of readout circuit units are provided, wherein the front surface of each of the photodetectors is provided with one or more first micro-bumps, and the side of each of the readout circuit units located on the front surface of the wafer is provided with one or more second micro-bumps, and the substrate material of the plurality of photodetectors is different from the substrate material of the plurality of readout circuit units; The front sides of the plurality of photodetectors are respectively arranged on one of the readout circuit units in the wafer, with the front sides of the plurality of photodetectors facing the front side of the wafer, so that the first micro-bumps are connected correspondingly with the second micro-bumps to form an intermediate component; The intermediate component is cut into pieces to form a plurality of infrared detection devices, each of which includes one of the photodetectors and a corresponding readout circuit unit.

2. The method for preparing an infrared detection device according to claim 1, characterized in that: The radial dimension of each of the first micro-bumps is less than or equal to 5 μm, and the radial dimension of each of the second micro-bumps is less than or equal to 5 μm.

3. The method for preparing an infrared detection device according to claim 2, characterized in that: The distance between two adjacent first micro-bumps is less than or equal to 5 μm, and the distance between two adjacent second micro-bumps is less than or equal to 5 μm.

4. The method for preparing an infrared detection device according to claim 1, characterized in that: The method of placing the front sides of the plurality of photodetectors toward the front side of the wafer and arranging the plurality of photodetectors on one of the readout circuit units in the wafer respectively comprises: The bonding equipment is used to absorb the plurality of photodetectors, and the front side of each photodetector is sequentially oriented toward the front side of the wafer, and each photodetector is correspondingly arranged on one of the readout circuit units.

5. The method for preparing an infrared detection device according to claim 4, characterized in that: The bonding device is used to pre-bond each of the photodetectors onto one of the readout circuit units at room temperature by a preset pressure.

6. The method for preparing an infrared detection device according to claim 5, characterized in that: After each of the photodetectors is pre-bonded to one of the readout circuit units by a preset pressure at room temperature, the method comprises: A flat pressing piece having a first preset temperature is used to bond the plurality of photodetectors and the plurality of readout circuit units for a first preset time to achieve corresponding connection between the first micro-bumps and the second micro-bumps.

7. The method for preparing an infrared detection device according to claim 6, characterized in that: The first preset temperature is 100° C.-140° C., and the first preset time is 5 min-15 min.

8. The method for preparing an infrared detection device according to claim 5, characterized in that: After each of the photodetectors is pre-bonded to one of the readout circuit units by a preset pressure at room temperature, the method comprises: The pre-bonded photodetector and the readout circuit unit are further reflowed. Bonding fixation.

9. The method for preparing an infrared detection device according to claim 8, characterized in that: The temperature of the reflow soldering is a second preset temperature, the duration of the reflow soldering is a second duration, the second preset temperature is 140° C.-200° C., and the second duration is 5 min-15 min.

10. The method for preparing an infrared detection device according to any one of claims 1 to 9, characterized in that: After the front sides of the plurality of photodetectors are respectively arranged on one of the readout circuit units in the wafer with the front sides facing the front side of the wafer so that the first micro-bumps are connected correspondingly to the second micro-bumps, the method further comprises: A primer is filled between each of the photodetectors and a corresponding one of the readout circuit units.

11. The method for preparing an infrared detection device according to claim 10, characterized in that: Each of the photodetectors comprises a substrate and a body arranged on the substrate, wherein the substrate is located on a side where the back side of the photodetector is located; After filling the primer between each of the photodetectors and the corresponding readout circuit unit and before the intermediate assembly is cut, the method comprises: The substrate of the photodetector is thinned from the back side of the photodetector.

12. The method for preparing an infrared detection device according to claim 11, characterized in that: The substrate of the photodetector is thinned to less than or equal to 100 μm.

13. The method for preparing an infrared detection device according to claim 1, characterized in that: The photoelectric detector is an infrared photoelectric detector.

14. The method for preparing an infrared detection device according to claim 13, characterized in that: The infrared detection device is an infrared focal plane detector.

15. The method for preparing an infrared detection device according to any one of claims 1 to 14, characterized in that: The photodetector and the readout circuit unit have different thermal expansion coefficients.

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