Quantum dot LED chip, LED package device, and light-emitting apparatus

Abstract

The present application relates to a quantum dot LED chip and a manufacturing method therefor, a package device, and a light-emitting apparatus. The quantum dot LED chip comprises a carrier; the carrier is made of a light-transmitting solid material; a plurality of nano-pores are formed in the surface or the interior of the carrier, and quantum dot materials are loaded in the nano-pores; the carrier is arranged on the quantum dot LED chip and located above a multi-quantum well light-emitting layer of the quantum dot LED chip; and light emitted by the multi-quantum well light-emitting layer of the quantum dot LED chip can excite the quantum dot materials to convert the wavelength emitted by the chip. In the present application, the quantum dot materials are packaged on the LED chip, thereby improving the excitation efficiency of quantum dots, and reducing the amount of use of the quantum dot materials.

Description

Quantum dot LED chips, LED packaging devices and light-emitting devices Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to quantum dot LED chips, LED packaging devices, and light-emitting devices. Background Art

[0002] In recent years, as users' demands for display device performance continue to rise, high-color-gamut displays have become increasingly popular. As a widely used indicator of display device color performance, the higher the NTSC color gamut value, the richer and more prominent the displayed colors, resulting in more realistic color reproduction. Quantum dot technology, which can achieve ultra-high color gamut in the display field, has garnered significant industry attention.

[0003] Summary of the Invention

[0004] The purpose of this application is to provide a quantum dot LED chip and a packaging device and a light-emitting device using the quantum dot LED chip.

[0005] The present application provides a quantum dot LED chip, comprising a carrier and a multi-quantum well light-emitting layer. The carrier is made of a light-transmitting solid material, and has multiple nanopores on or inside the carrier, wherein the nanopores are loaded with quantum dot material. The carrier is arranged above the multi-quantum well light-emitting layer, and the light emitted by the multi-quantum wells of the LED chip can excite the quantum dot material to convert the wavelength emitted by the chip.

[0006] The quantum dot LED chip of this solution is processed into multiple micropores, namely nanopores, on the carrier, so that the micropores can accommodate quantum dots, so as to realize the carrier loading quantum dots. The carrier is part of the LED chip. The light emitted by the chip can fully excite the quantum dots to achieve a high color gamut display effect. At the same time, this can reduce the use of quantum dots and reduce costs.

[0007] For more applications of quantum dot LED chips, please refer to the specific embodiments below in this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0009] FIG1-1 is a schematic structural diagram of a quantum dot package provided by one embodiment;

[0010] Figure 1-2 is a detailed structural diagram of the coating layer in Figure 1-1;

[0011] 1-3 is a flow chart of the steps of a method for manufacturing a quantum dot package provided by one embodiment;

[0012] Figures 1-4 are schematic structural diagrams of a quantum dot LED chip provided in one embodiment;

[0013] Figures 1-5 are schematic structural diagrams of a quantum dot LED chip provided in one embodiment;

[0014] 1-6 are flow charts of steps of a method for manufacturing a quantum dot LED chip according to one embodiment;

[0015] FIG1-7a is a schematic diagram of step a in the method for manufacturing a quantum dot LED chip provided in FIG1-6;

[0016] FIG1-7b is a schematic diagram of step b in the method for manufacturing a quantum dot LED chip provided in FIG1-6;

[0017] FIG1-7c is a schematic diagram of step c in the method for manufacturing a quantum dot LED chip provided in FIG1-6;

[0018] FIG1-7d is a schematic diagram of step d in the method for manufacturing a quantum dot LED chip provided in FIG1-6;

[0019] 1-8 are schematic structural diagrams of an LED packaging device provided by an embodiment;

[0020] FIG2-1 is a schematic diagram of a top view of a chipset provided in an example of the fourth embodiment or a light source assembly provided in an example of the fifth embodiment;

[0021] FIG2-1a and FIG2-1b are schematic circuit diagrams of each chip in the chipset or light source assembly provided in FIG2-1;

[0022] FIG2-2 is a schematic diagram of a top view of a chipset provided in another example of the fourth embodiment or a light source assembly provided in another example of the fifth embodiment;

[0023] FIG2-2a and FIG2-2b are schematic circuit diagrams of each chip in the chipset or light source assembly provided in FIG2-2;

[0024] 2-3 are schematic top views of a chipset provided in another example of the fourth embodiment or a light source assembly provided in another example of the fifth embodiment;

[0025] FIG2-3a and FIG2-3b are schematic circuit diagrams of each chip in the chipset or light source assembly provided in FIG2-3;

[0026] Figures 2-4 are schematic structural diagrams of a light-emitting device provided in Example 4;

[0027] Figures 2-5 are schematic diagrams showing the structure of a quantum dot LED chip provided as an example in the fourth embodiment;

[0028] FIG2-5a is a schematic structural diagram of a quantum dot LED chip provided in another example of the fourth embodiment;

[0029] FIG2-6 is a schematic structural diagram of an LED packaging device provided by an example in the fifth embodiment;

[0030] Figures 2-7 are schematic structural diagrams of a light-emitting device provided in Example 5;

[0031] FIG2-8 is a schematic diagram showing a top view of a chipset provided in an example of the sixth embodiment;

[0032] FIG2-9 is a schematic structural diagram of an LED package device provided in Example 7;

[0033] FIG2-10 is a schematic structural diagram of a light-emitting device provided in Example 7;

[0034] FIG2-11 is a schematic structural diagram of an LED packaging device provided in Example 8;

[0035] FIG2-12 is a schematic structural diagram of the light-emitting device provided in Example 8. FIG. DETAILED DESCRIPTION

[0036] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0037] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly attached to the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0039] Example 1

[0040] The quantum dot LED chip in this embodiment includes a quantum dot package 100 provided on the LED chip, wherein the quantum dot package 100 can be manufactured separately and then combined with the LED chip to form a quantum dot LED chip. This embodiment first introduces the quantum dot package 100. Please refer to Figures 1-1 and 1-2, which are a quantum dot package 100 described in an embodiment, including a carrier 10 and a coating layer 20. The carrier 10 is made of a light-transmitting solid material, and the carrier 10 has a plurality of micropores on the surface or inside or on the surface and inside. In this embodiment, the carrier 10 is glass 11, and a plurality of micropores are distributed on the surface of the glass 11, and quantum dots are loaded in the micropores. In other embodiments, the carrier 10 can also be other light-transmitting solid objects (such as crystal or ALON).

[0041] In this embodiment, the glass 11 preferably comprises at least 96% by mass of SiO2, 1% to 3% by mass of B2O3, and 1% to 3% by mass of Al2O3. The micropores are nanopores with a pore diameter of 5 nm to 15 nm. The total pore volume of all micropores accounts for 25% to 40% of the volume of the glass 11.

[0042] In this embodiment, the coating layer 20 is coated on the outer surface of the glass 11 (i.e., the carrier 10). The coating layer 20 includes at least two organic layers 21 and at least one inorganic layer 22. The organic layers 21 and the inorganic layers 22 are alternately arranged from the inside to the outside in the thickness direction of the coating layer 20. For example, the coating layer 20 can be three, four, or five layers, or another number of layers. Theoretically, the more layers there are, the better the protection for the outer surface of the glass 11, but the cost is also higher. The coating layer 20 can be arranged according to actual needs.

[0043] 1-3 , the present application also provides a method for manufacturing the quantum dot package 100 , which includes the following steps:

[0044] S11: Select a light-transmitting solid material as the carrier 10 , and process a plurality of microporous structures on the surface or inside of the carrier 10 .

[0045] In this embodiment, the carrier 10 is glass 11, and the preparation method can be: placing the glass 11 in an acidic solution (such as sulfuric acid, hydrofluoric acid, etc.), corroding specific substances in the glass 11 with the acidic solution, thereby forming concave micropores on the surface of the glass 11 or on the surface and inside of the glass 11, thereby preparing the carrier 10.

[0046] S12: Immerse the carrier 10 in a quantum dot solution formed by fully mixing the quantum dot material and a specific solvent for a preset time.

[0047] The quantum dot material can be one or more red or green emitting materials such as CdS, ZnS, CdSe, and InP, with a particle size of 1 nm to 10 nm. The solvent can be a volatile solvent such as acetone, ethyl acetate, toluene, or DMF (dimethylformamide). A quantum dot solution can be prepared by placing the quantum dots in the solvent and stirring evenly.

[0048] In this embodiment, the glass 11 is immersed in the quantum dot solution for a preset time period.

[0049] The preset duration can be 1 to 12 hours depending on actual processing needs. The immersion process can be performed at normal pressure or at high pressure (higher than normal pressure). In this embodiment, high pressure is preferred, which can save immersion time, allow the quantum dot solution to penetrate deeper into the glass 11, and reduce bubbles in the glass 11.

[0050] S13: After the soaking is completed, the carrier 10 is taken out and dried.

[0051] In this embodiment, the glass 11 is taken out and dried.

[0052] It should be noted that before drying the glass 11 , the glass 11 may be cleaned with a volatile solvent and then dried, thereby helping to more thoroughly remove impurities on the surface of the glass 11 and improving the bonding quality of the subsequent coating layer 20 .

[0053] S14: Place the carrier 10 loaded with quantum dots into a coating device to process the coating layer 20. The coating layer 20 is made of a light-transmitting material. The coating layer 20 is coated on the outer surface of the carrier 10. The coating layer 20 includes at least two organic layers 21 and at least one inorganic layer 22. The organic layer 21 and the inorganic layer 22 are alternately arranged from the inside to the outside in the thickness direction of the coating layer 20.

[0054] In this embodiment, the carrier 10 loaded with quantum dots is placed in a coating device to process the coating layer 20. Optionally, the coating device can be, but is not limited to, any one of PECVD (plasma enhanced chemical vapor deposition) or ALD (atomic layer deposition) equipment.

[0055] S15: The coating process is completed, and a processed quantum dot package 100 is obtained.

[0056] The implementation of the embodiment of the present application will have the following beneficial effects: the quantum dot package 100 of the present solution, by processing a plurality of micropores, i.e., nanopores, on the carrier 10 (glass 11 in this embodiment), so that the micropores can accommodate quantum dots, so as to realize the carrier 10 loading quantum dots, and further processing the coating layer 20 on the outside of the carrier 10, can realize the encapsulation of quantum dots, and because the coating layer 20 in the present application adopts a multi-layer structure design of at least two organic layers 21 and at least one inorganic layer 22, the organic layer 21 and the inorganic layer 22 are alternately arranged from the inside to the outside in the thickness direction of the coating layer 20, compared with the prior art packaging method using resin or silica gel, the inorganic layer 22 is more resistant to water and oxygen. The isolation effect is better than that of resin and silicone, but the inorganic layer 22 also has the problem of easy cracking, so an organic layer 21 is further arranged around the inorganic layer 22 for protection. The organic layer 21 has a certain toughness, which can make up for the problem of easy cracking of the inorganic layer 22; and the organic layer 21 is not airtight enough and is easy to yellow, so it is necessary to coat the inorganic layer 22 on the outside of the organic layer 21 to improve the problems of insufficient airtightness and easy yellowing of the organic layer 21. Therefore, in this application, the molecules of the inorganic layer 22 are smaller and can easily enter between the macromolecular chains of the organic layer 21, with good water and oxygen isolation. The organic layer 21 and the inorganic layer 22 are combined with each other, and their advantages complement each other, providing airtightness protection for the quantum dot package 100, which is helpful for the display effect.

[0057] In this embodiment, the material of the organic layer 21 is acrylic acid, the material of the inorganic layer 22 is any one of AlN, Al2O3, Si4N3, and SiO2, and the material of the glass 11 is mainly SiO2.

[0058] In an optional embodiment, the number of layers of the coating layer 20 is set to an odd number of layers (2n+1 layers, n is a non-zero natural number). For example, the number of layers of the coating layer 20 can be one of 3 layers, 5 layers, 7 layers, and 11 layers. The innermost layer and the outermost layer in the thickness direction of the coating layer 20 are both set to organic layers 21, and the organic layer 21 located in the innermost layer is in direct contact with the carrier 10.

[0059] In this embodiment, the glass 11 is an inorganic material. Therefore, the innermost film layer in direct contact with the glass 11 is configured as an organic layer 21, which can better bond with the glass 11 and increase the bonding strength. The outermost layer is also configured as an organic layer 21. Referring to Figures 1-4, when the quantum dot package 100 is applied to the quantum dot LED chip 200, the quantum dot package 100 can be bonded to the top of the flip-chip LED quantum dot LED chip 200. The outermost layer 21 of the quantum dot package 100 is the organic layer 21. The organic glue used during bonding is easy to bond to the organic layer 21, making it easier to bond to the quantum dot LED chip 200.

[0060] Furthermore, the thickness of the innermost organic layer 21 is greater than or equal to 100 nm, and the thicknesses of the remaining organic layers 21 and inorganic layers 22 are all in the range of 40 nm to 50 nm.

[0061] That is, the thickness of the innermost organic layer 21 is designed to be the thickest layer, which can play a buffering and protective role for the carrier 10 (glass 11 in this embodiment), achieve more sufficient protection for the carrier 10, and also facilitate the attachment and fixation of the second inner layer (second layer) inorganic layer 22.

[0062] Referring to Figures 1-4, an embodiment of the present application further provides a quantum dot LED chip 200, which includes an electrode 230 and a quantum dot package 100 as described in any of the above embodiments. In one embodiment, the quantum dot LED chip 200 is a flip-chip LED chip, and the electrode 230 is provided on one side of the quantum dot LED chip 200, and the quantum dot package 100 is provided on the other side of the quantum dot LED chip 200 opposite to the electrode 230. The light emitted by the quantum dot LED chip 200 can pass through the quantum dot package 100 to excite the quantum dots within the quantum dot package, emitting light of a specific wavelength. In this example, the quantum dot package 100 is bonded to the flip-chip LED chip with a transparent adhesive to form the quantum dot LED chip 200, for example, bonded to the transparent substrate of the flip-chip.

[0063] In other embodiments, the quantum dot package 100 can be integrated onto the quantum dot LED chip 200 through other connection methods. Referring to Figures 1-5 , in another embodiment, the quantum dot LED chip 200 includes a bonding layer 210 and an epitaxial layer 220. The electrode 230 and the quantum dot package 100 are located on opposite sides of the quantum dot LED chip 200. The quantum dot package 100 and the electrode 230 are located at opposite ends of the entire quantum dot LED chip 200. One side of the bonding layer 210 is connected to the quantum dot package 100 by bonding, and the other side is connected to the epitaxial layer 220. The epitaxial layer 220 includes an N-type semiconductor layer 221 and a P-type semiconductor layer 222, and a multi-quantum well light-emitting layer 223 between the N-type semiconductor layer 221 and the P-type semiconductor layer 222. The electrode 230 is arranged at the outermost side of the epitaxial layer 220, including a first electrode 231 electrically connected to the N-type semiconductor layer and a second electrode 232 connected to the P-type semiconductor layer. The side of the quantum dot LED chip 200 is covered with a light-blocking adhesive layer 240.

[0064] Bonding is a method used to connect materials, using chemical or physical bonds to join two or more materials. In this embodiment, the quantum dot package 100 is bonded to the quantum dot LED chip 200, eliminating the need for additional glue. This bonding method is more secure and less prone to failure than gluing. In this embodiment, the bonding layer 210 is SiO2, and the substrate of the quantum dot LED chip 200 can be removed. This ensures that even with the addition of the quantum dot package 100, the thickness of the quantum dot LED chip 200 does not increase significantly, minimizing the thickness of the quantum dot LED chip 200. In one embodiment, the bonding layer 210 can also serve as the substrate of the quantum dot LED chip 200. To allow light emitted by the quantum dot LED chip 200 to pass through the substrate and enter the quantum dot package 100, the substrate must be light-transmissive, such as a sapphire substrate. The quantum dot package 100 can be bonded to the substrate of the quantum dot LED chip 200 through a bonding process, thereby being mounted on the quantum dot LED chip 200 to form the quantum dot LED chip. When the quantum dot LED chip 200 is working, the quantum dot material is located above the multi-quantum well light-emitting layer 223. The light emitted by the multi-quantum well light-emitting layer 223 can penetrate the bonding layer 210 and the quantum dot package 100, excite the quantum dot material, and emit light of a specific wavelength.

[0065] In this embodiment, the function of the light-blocking adhesive layer 240 is to prevent the light emitted by the quantum dot LED chip 200 from escaping from the side of the quantum dot LED chip 200. Therefore, the height of the light-blocking adhesive layer 240 at least covers the epitaxial layer 220 of the quantum dot LED chip 200 (including the N-type GaN layer (i.e., the N-type semiconductor layer 221), the multi-quantum well light-emitting layer 223, and the P-type GaN layer (i.e., the P-type semiconductor layer 222)). However, the light-blocking adhesive layer 240 cannot cover the upper surface of the quantum dot package 100 to avoid affecting the light emission effect of the quantum dot LED chip 200, and the light-blocking adhesive layer 240 cannot cover the electrode 230 of the quantum dot LED chip 200. In this embodiment, the height of the light-blocking adhesive layer 240 is flush with the upper surface of the quantum dot package 100. The advantage of this is that the light-blocking adhesive layer 240 can not only prevent the light emitted by the chip from leaking from the side, but also protect the side of the quantum dot package 100. In other embodiments, the height of the light-blocking adhesive layer 240 can also be lower than the upper surface of the quantum dot package 100 (see Figure 1-7d), which can save light-blocking adhesive material.

[0066] In one embodiment, the light-blocking adhesive layer 240 can be a white adhesive layer formed by curing silicone mixed with white reflective particles. The white reflective particles can reflect the light emitted from the side of the quantum dot LED chip 200 back into the quantum dot LED chip 200, so that most of the light emitted by the quantum dot LED chip 200 is emitted from above. Most of the light emitted from above can excite the quantum dot material to emit light of a specific wavelength, thereby improving the light conversion efficiency. The white reflective particles do not absorb light, the light loss is small, and the light output rate is high, which is suitable for use as a backlight source in backlight products. Silicone has the advantages of good stability, good blue light resistance, and good yellowing resistance, and is very suitable for use in conjunction with blue light chips in backlight products. Since the white particles have a reflective effect, in this embodiment, the light-blocking adhesive layer 240 can also be called a reflective layer.

[0067] In another embodiment, the light-blocking adhesive layer 240 can be a black adhesive layer formed by curing epoxy adhesive mixed with black particles or black pigment. The black particles can reflect the light emitted from the side of the quantum dot LED chip 200 back into the interior of the quantum dot LED chip 200, and absorb part of the light, so that the light output from the side of the quantum dot LED chip 200 is reduced, and more light is output from above the quantum dot LED chip 200. Most of the light emitted from above can excite the quantum dot material to emit light of a specific wavelength, which is very suitable for use in LED direct display products (i.e., LED direct display products). In LED direct display products, the display pixels of the display screen are composed of quantum dot LED chips 200. There are a large number of quantum dot LED chips 200 to form a display pixel array, so the brightness is very high. Therefore, even if the black particles absorb light, it has little effect on the display brightness. Moreover, the black light-blocking adhesive layer avoids light crosstalk between adjacent quantum dot LED chips 200, increases the display contrast, and has a better display effect. Epoxy adhesive has the advantages of high density, good airtightness, and high adhesion, which is very suitable for LED direct display products.

[0068] As shown in Figures 1-6, 1-7a to 1-7d, in addition, the present application also provides a method for manufacturing the above-mentioned quantum dot LED chip 200, which specifically includes the following steps:

[0069] Step a: Provide a substrate and grow an epitaxial layer 220 on the substrate. The epitaxial layer 220 includes an N-type semiconductor layer 221 and a P-type semiconductor layer 222, and a multi-quantum well light-emitting layer 223 arranged between the N-type semiconductor layer 221 and the P-type semiconductor layer 222; cover the epitaxial layer 220 with a bonding layer 210.

[0070] Specifically in this embodiment, referring to FIG1-7a, a bonding layer 210 is covered on the surface of the epitaxial layer 220. In this embodiment, the bonding layer 210 is SiO2. In this embodiment, a SiO2 thin film layer is covered on the surface of the GaN epitaxial layer as the bonding layer 210. For example, the SiO2 thin film layer can be deposited on the surface of the GaN epitaxial layer by electron beam evaporation, and the evaporation vacuum is 1E10 -6 Torr~1E -5 Torr, evaporation temperature is 120℃~300℃;

[0071] In this embodiment, the substrate is a sapphire substrate, the epitaxial layer 220 is a GaN epitaxial layer, the N-type semiconductor layer 221 is an N-type GaN layer, and the P-type semiconductor layer 222 is a P-type GaN layer. In other embodiments, it can also be other substrates, such as a SiC substrate or a Si substrate; the epitaxial layer 220 can also be other types of epitaxial layers.

[0072] Step b: bonding the quantum dot package 100 to the bonding layer 210 .

[0073] Specifically, referring to Figure 1-7b, the quantum dot package 100 described in Example 1 is provided, and the quantum dot package 100 is surface cleaned, chemically mechanically polished and activated, and the bonding layer 210 covering the surface of the epitaxial layer 220 is surface cleaned, chemically mechanically polished and activated.

[0074] In this embodiment, the surface of the quantum dot package is preferably a SiO 2 layer, which has the advantage of high bonding strength with the bonding layer 210 which is also SiO 2 .

[0075] Then, the activated surface of the quantum dot package 100 is connected to the activated surface of the bonding layer 210 , and the quantum dot package 100 and the bonding layer 210 are bonded together under high temperature and high pressure.

[0076] In this embodiment, after activation, hydroxyl groups (-OH) are formed on the surface of the quantum dot package 100 and the SiO2. Under high temperature and high pressure, the quantum dot package 100 and the SiO2 are bonded together, thereby connecting the quantum dot package 100 to the epitaxial layer 220 via the bonding layer 210.

[0077] Step c: removing the substrate and forming an electrode 230 on the epitaxial layer 220 to form a chip prototype 200 ′.

[0078] 1-7c, in this embodiment, laser is used to remove the sapphire substrate, which has the advantages of high efficiency and low cost. In other embodiments, other chemical (such as etching) or physical (grinding) means can also be used to remove the substrate.

[0079] Electrodes 230 are formed on the epitaxial layer 220 . The electrodes 230 are located on the outermost side of the epitaxial layer 220 and include a first electrode electrically connected to the N-type semiconductor layer 221 and a second electrode electrically connected to the P-type semiconductor layer 222 , forming a chip prototype 200 ′.

[0080] In this embodiment, the process for making the electrode 230 can adopt a mature process in the existing technology. For example, a photolithography process can be used to first remove part of the epitaxial layer 220 to expose at least part of the surface of the N-type semiconductor layer 221 and the P-type semiconductor layer 222, and then a metal film layer is sputtered on the surface of the epitaxial layer 220 to form a first electrode electrically connected to the N-type semiconductor layer 221 and a second electrode connected to the P-type semiconductor layer 222. Specifically, in this embodiment, a photolithography process is used to etch P-GaN and N-GaN with a specific structure on the GaN epitaxial layer, and then a metal film layer is sputtered on the surface of the P-GaN and N-GaN to form the electrode 230.

[0081] Step d: Disposing a light-blocking adhesive layer 240 on the side of the epitaxial layer 220 of the chip prototype 200 ′ to obtain a complete quantum dot LED chip 200 .

[0082] In this step, specifically, referring to FIG1-7d, a plurality of chip prototypes 200' may be first arranged to form a chip array neatly arranged in a first direction (the x-direction indicated by the dotted arrow in FIG1-7d) and a second direction (the y-direction indicated by the dotted arrow in FIG1-7d), wherein gaps exist between each quantum dot LED chip 200; the first direction and the second direction are perpendicular to each other.

[0083] In this embodiment, multiple chip prototypes 200' are arranged in a rectangular array, with the electrodes 230 of each quantum dot LED chip 200 facing downward or upward, and the spacing between each quantum dot LED chip 200 is equal. To maintain the stability of each quantum dot LED chip 200, a horizontal support surface can be provided below the quantum dot LED chip 200. The horizontal support surface has a certain degree of adhesiveness, so that the bottom of each quantum dot LED chip 200 is firmly attached to the horizontal support surface. Since the outer contour of the quantum dot LED chip 200 is generally square, the first direction is perpendicular to the second direction, which facilitates the arrangement of the quantum dot LED chips 200 and facilitates subsequent cutting operations.

[0084] Then, the gaps between adjacent quantum dot LED chips 200 in the chip array are filled with light-blocking glue, and then cured to form a light-blocking glue layer 240 .

[0085] In this embodiment, the light-blocking adhesive layer 240 can be formed by mixing white reflective particles with silicone or epoxy with black particles. The light-blocking adhesive layer 240 at least covers the epitaxial layer 220 of the quantum dot LED chip 200, thereby providing light-blocking performance.

[0086] Finally, the chip array is cut along the gaps between the quantum dot LED chips 200 to obtain a plurality of finished quantum dot LED chips 200 . The sides of each quantum dot LED chip 200 are coated with a light-blocking adhesive layer 240 .

[0087] In this embodiment, the nanopores formed on the quantum dot package 100 by electrochemically corroding the carrier 10 (e.g., glass 11) will encapsulate the quantum dots therein, and the quantum package 100 and the epitaxial layer 220 are separated by the bonding layer 210. The bonding layer 210 plays the role of bonding and connecting the quantum dot package 100 while also protecting the epitaxial layer 220. This application prepares the quantum dot LED chip 200 by adopting the above-mentioned manufacturing method. The introduction of the quantum dot material will not affect the PN junction epitaxial structure of the quantum dot LED chip 200 itself, nor will it affect its quantum well luminescence performance. At the same time, a light-blocking adhesive layer 240 is made around the quantum dot LED chip 200 to effectively prevent blue light leakage. In addition, this embodiment removes the substrate, thereby minimizing the thickness of the quantum dot LED chip 200 as much as possible, facilitating product miniaturization and ultra-thin design.

[0088] In this embodiment, in step b, the activated surface of the quantum dot package 100 is connected to the activated surface of the bonding layer 210, and the specific scheme for bonding the quantum dot package 100 and the bonding layer 210 together under high temperature and high pressure is as follows:

[0089] The bonding layer 210 (a SiO2 thin film layer in this embodiment) of the quantum dot package 100 is subjected to chemical mechanical polishing to obtain a smooth and clean polished surface. The remaining depth of the SiO2 thin film after polishing is 1 μm-3 μm, and the surface roughness Ra is less than 0.1 μm.

[0090] After the polished surfaces of the quantum dot package 100 and the bonding layer 210 are cleaned and activated with a mixed solution of hydrochloric acid and hydrogen peroxide, hydroxyl groups are formed on the surfaces of the quantum dot package 100 and the bonding layer 210, and then high-temperature and high-pressure bonding treatment is performed. The bonding temperature is 300°C to 500°C, the bonding pressure is 8000kg to 12000kg, and the bonding time is 900s to 1200s.

[0091] In this way, the bonding strength and quality between the quantum dot package 100 and the bonding layer 210 can be improved, thereby improving the integrity of the combined package.

[0092] Example 2

[0093] In this embodiment, referring to the quantum dot LED chip shown in FIG2-5 , quantum dot material 624 is encapsulated within a portion of the epitaxial layer of the quantum dot LED chip and positioned above the multi-quantum well light-emitting layer 622. Specifically, the epitaxial layer serves as a carrier for the quantum dot material 624, and the epitaxial layer has multiple nanopores 623, within which the quantum dot material 624 is loaded. Referring to the quantum dot LED chip shown in FIG2-5a , in one embodiment, the quantum dot material 624 is encapsulated on a flip-chip transparent substrate 621. Specifically, the transparent substrate 621 serves as a carrier for the quantum dot material 624, and multiple nanopores 623 are formed on or within the surface of the transparent substrate 621, within which the quantum dot material 624 is loaded. The quantum dot material 624 includes quantum dot particles 630 and may also include a transparent sealing material 629 that encapsulates the quantum dot particles.

[0094] Example 3

[0095] Please refer to Figures 1-8. In addition, based on any of the above embodiments, the present application also provides an LED packaging device, including a packaging body and a quantum dot LED chip 200 encapsulated in the packaging body. The quantum dot LED chip 200 is the quantum dot LED chip described in the above embodiment 1.

[0096] The package body includes a bracket 300 and encapsulating glue 400. The bracket 300 defines an encapsulating cavity; the quantum dot LED chip 200 is mounted within the encapsulating cavity. Solder paste 500 is soldered to the bottom of the encapsulating cavity and secures the quantum dot LED chip 200. The encapsulating glue 400 fills the encapsulating cavity, thereby encapsulating the quantum dot LED chip 200 within the package body. The encapsulating glue 400 can be added with or without phosphors of other luminescent colors. After curing, the encapsulating glue 400 creates an LED packaged device using the quantum dot LED chip, offering excellent airtightness and high reliability.

[0097] Example 4

[0098] Referring to Figures 2-1 and 2-4 , as an application of a quantum dot LED chip, this embodiment provides a light-emitting device comprising a phosphor film 71 and at least one chipset 60a consisting of a first light-emitting chip 61 and a second light-emitting chip 62, as well as a circuit (not shown) electrically connected to the chipset 60a. In this embodiment, the circuit is disposed on a substrate 80, which may be a PCB, a ceramic substrate, or a glass substrate. In this embodiment, the light-emitting device comprises a film assembly 70 comprising a plurality of optical films, which may include optical films such as a brightness enhancement film and a diffusion film (not shown). In this embodiment, the phosphor film 71 is disposed on one layer of the film assembly 70. In conjunction with Figures 2-1 to 2-3 , the chipset 60a comprises at least one first light-emitting chip 61 and at least one second light-emitting chip 62, wherein both the first light-emitting chip 61 and the second light-emitting chip 62 are flip-chips. The first light-emitting chip 61 is used to emit light of a first color. In this embodiment, the first light-emitting chip 61 is a GaN (gallium nitride) blue light LED chip, and the first color is blue. In other embodiments, the first light-emitting chip 61 can also be a chip that emits other colors, and this application does not impose any restrictions here.

[0099] Referring to Figures 2-5 and 2-5a, the second light-emitting chip 62 includes a transparent substrate 621, a multi-quantum well light-emitting layer 622, and quantum dot (QD) material 624. Multiple nanopores 623 are disposed above the multi-quantum well light-emitting layer 622. To ensure uniform light emission, the nanopores 623 are preferably evenly distributed above the multi-quantum well light-emitting layer 622. The nanopores 623 are filled with quantum dot (QD) material 624 of a second color. In one example, referring to Figure 2-5, an n-GaN (n-type gallium nitride) layer 625 is disposed between the transparent substrate 621 and the multi-quantum well light-emitting layer 622. The nanopores 623 can be formed by electrochemically etching the n-GaN layer 625 of the light-emitting chip. A p-GaN (p-type gallium nitride) layer 626 is also disposed on the other side of the multi-quantum well light-emitting layer 622, opposing the n-GaN layer 625. Specifically, the multi-quantum well light-emitting layer 622 is located between the n-GaN layer 625 and the p-GaN layer 626. In one example, referring to Figure 2-5a, the transparent substrate 621 is also located above the multi-quantum well light-emitting layer 622, and the nanopores 623 can be formed by electrochemical etching of the transparent substrate 621, so that the quantum dot material 624 can be provided on the transparent substrate 621. Preferably, the quantum dot material 624 is provided in the portion close to the upper end surface of the transparent substrate 621, which is convenient for production and at least a portion of the lower part of the transparent substrate 621 does not have the quantum dot material 624, which can serve to isolate the quantum dot material 624 from part of the heat.

[0100] Light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 excites the quantum dot material 624 to emit light of a second color. In this embodiment, the second color is red, while the light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 is blue, and the quantum dot material is red quantum dots. In other embodiments, the second color can also be other colors, and the light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 can also be other colors. A phosphor film 71 covers the first and second light-emitting chips 61 and 62. The phosphor film 71 contains a phosphor that is excited by the first color light emitted by the first light-emitting chip 61 and emits light of a third color. In this embodiment, the phosphor is a green phosphor, preferably a β-sialon nitride phosphor, and the third color is green. The first, second, and third colors mix above the first and second light-emitting chips 61 and 62 and the phosphor film 71 to form white light. In this embodiment, the first color is blue, the second color is red, and the third color is green. The red, green, and blue colors form white light above the phosphor film.

[0101] In this embodiment, the second light-emitting chip generates red light by exciting quantum dots with blue light emitted from the multi-quantum well light-emitting layer 622. Therefore, the second light-emitting chip can be called a red light quantum dot LED chip. Referring to the example of Figures 2-5, the red light quantum dot LED chip in this embodiment is formed by electrochemically etching the GaN layer to form nanopores, and then loading the red quantum dot material into the pores. The blue light is excited and converted into red light. The chip is essentially a GaN-based epitaxial material, the same as the epitaxial material of traditional (commonly used) blue light chips, which is different from the GaAs epitaxial material of traditional (commonly used) red light chips.

[0102] From the above comparison, it can be seen that in this embodiment, the red light quantum dot LED chip can replace the red light chip to emit red light, so the light-emitting device provided in this embodiment can use no traditional (currently commonly used) red light chip, so that the second light-emitting chip 62 can be designed and manufactured based on the production process and process of the blue light LED chip, so that the difference between the first light-emitting chip 61 and the second light-emitting chip 62 is relatively small, which is conducive to reducing and controlling production costs, and the first light-emitting chip 61 and the second light-emitting chip 62 are semiconductor devices of the same system (for example, both are GaN system semiconductor devices), and their driving voltages and currents are similar or the same, which is convenient for simplifying circuit design and reducing product research and development costs.

[0103] It should be noted that, similar to the aforementioned red quantum dot LED chip, if the second light-emitting chip 62 generates green light through light emitted by the multi-quantum well light-emitting layer 622, the second light-emitting chip 62 can be referred to as a green quantum dot LED chip. If the second light-emitting chip 62 generates blue light through light emitted by the multi-quantum well light-emitting layer 622, the second light-emitting chip 62 can be referred to as a blue quantum dot LED chip. Because blue light has higher energy and is more suitable as an excitation light source for quantum dot materials, the light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 in this embodiment is preferably blue light. If the quantum dot material includes multiple quantum dots, for example, red and green quantum dots, the light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 can excite the quantum dots to generate both red and green light. The second light-emitting chip 62 can also be referred to as a red-green quantum dot LED chip. If the light emitted by the quantum dot LED chip and the light emitted by the multi-quantum well light-emitting layer 622 combine to form white light, the second light-emitting chip 62 can also be referred to as a white quantum dot LED chip. In this way, if the second light-emitting chip 62 (white light quantum dot LED chip) is used in a light-emitting device, it does not need to be combined with other chips to form a chipset, and can be directly used as a high color gamut white light source.

[0104] In other embodiments, the first color is preferably blue; the second color can be one of red or green; the third color is one of green or red, and the third color is different from the second color, and the three different colors are mixed to form white.

[0105] In one embodiment, the light-transmitting substrate 621 of the second light-emitting chip 62 is a sapphire substrate, which has good light transmittance and high hardness.

[0106] In one embodiment, the quantum dot material 624 includes quantum dot particles 630 and a light-transmitting sealing material 629 for sealing the quantum dot particles 630 in the nanopores 623 .

[0107] In one embodiment, referring to FIG. 2-4 , the chipset 60 a further includes a lens 90 covering the first light emitting chip 61 and the second light emitting chip 62 , which is conducive to diverging light.

[0108] In one embodiment, there are multiple chipsets 60a arranged in a matrix. In one example, a circuit (not shown) includes a first circuit (not shown) for controlling the first light-emitting chip 61 in each chipset 60a, and a second circuit (not shown) independent of the first circuit for controlling the second light-emitting chip 62. In one example, the control voltages of the first and second light-emitting chips 61, 62 are the same, simplifying circuit design.

[0109] In one embodiment, referring to FIG2-1 , the chipset 60a includes a first light-emitting chip 61 and a second light-emitting chip 62. In one example, the first light-emitting chip 61 and the second light-emitting chip 62 are arranged side by side, and the spacing a between the first light-emitting chip 61 and the second light-emitting chip 62 is controlled to be between ≥30μm and ≤100μm, which is conducive to light mixing. Referring to FIG2-1a , in the circuit, the first light-emitting chip 61 and the second light-emitting chip 62 can be arranged in series. Referring to FIG2-1b , the first light-emitting chip 61 and the second light-emitting chip 62 can also be arranged independently of each other in the circuit, and can be further arranged in series or in parallel on a matching circuit.

[0110] In practical applications, the light emitted by the multi-quantum well light-emitting layer 622 of the second light-emitting chip 62 is used to excite quantum dots, which in turn, in combination with the light emitted by the first light-emitting chip 61, excite the phosphor to produce white light. Generally, the higher the color gamut of the white light produced, the corresponding brightness loss will occur. To achieve high-color gamut white light while also improving brightness, one first light-emitting chip 61 can be used in conjunction with two second light-emitting chips 62 to compensate for the brightness loss.

[0111] In one embodiment, the chipset 60a includes a first light-emitting chip 61 and two second light-emitting chips 62. In one example, referring to FIG2-2 , the two second light-emitting chips 62 are arranged on either side of the first light-emitting chip 61, which has the advantages of symmetrical light patterns, sufficient brightness, and good light uniformity. In another example, the two second light-emitting chips 62 can also be located on the same side of the first light-emitting chip 61. In one example, referring to FIG2-2a , the two second light-emitting chips 62 can be connected in series with the first light-emitting chip 61 and controlled simultaneously. In another example, referring to FIG2-2b , the two second light-emitting chips 62 can also be connected in series and then controlled independently of the first light-emitting chip 61. A series or parallel circuit configuration can be performed on a matching circuit.

[0112] In one embodiment, the chipset 60a includes a first light-emitting chip 61 and four second light-emitting chips 62. In one example, referring to FIG2-3, two second light-emitting chips 62 are arranged on one side of the first light-emitting chip 61; the other two second light-emitting chips 62 are arranged on the other side of the first light-emitting chip 61, which has the advantages of symmetrical light pattern, sufficient brightness, and good uniformity. In another example, the four second light-emitting chips 62 can also be located on the four sides of the first light-emitting chip 61. In one example, referring to FIG2-3a, the four second light-emitting chips 62 can be connected in series with the first light-emitting chip 61 and controlled simultaneously; in one example, referring to FIG2-3b, the four second light-emitting chips 62 are connected in series and are controlled separately from the first light-emitting chip 61, and can be further connected in series or in parallel on a matching circuit.

[0113] The above-mentioned light-emitting device provided in this application has the quantum dot material disposed in the second light-emitting chip 62. Therefore, there is no need to set an expensive QD (Quantum Dot) film above the first light-emitting chip 61 and the second light-emitting chip 62. Only a low-cost phosphor film 71 needs to be disposed above the light-emitting chip to achieve the generation of high-color gamut white light, which can reduce production costs.

[0114] Example 5

[0115] With reference to Figures 2-1, 2-2, 2-3, 2-6 and 2-7, the present application also provides another light-emitting device, including at least one light source assembly 60b (the reference numeral 60a in Figures 2-1, 2-2 and 2-3 may also represent the light source assembly 60b) composed of a second light-emitting chip 62 and an LED packaging device 61p, and a circuit electrically connected to the light source assembly 60b. With reference to Figure 2-6, the LED packaging device 61p includes a substrate 611, a first light-emitting chip 61 and a fluorescent glue 612. In the light source assembly 60b, the second light-emitting chip 62 is a flip chip; the first light-emitting chip 61 may be a face-up chip or a flip chip; the first light-emitting chip 61 is used to emit light of a first color. The second light-emitting chip 62 in this embodiment is the same as the second light-emitting chip 62 in Example 4.

[0116] Fluorescent adhesive 612 covers the first light-emitting chip 61. Fluorescent adhesive 612 contains phosphor powder that is excited by the first color of light emitted by the first light-emitting chip 61 and emits a third color of light. In this embodiment, the phosphor powder is mixed with the encapsulating adhesive to form fluorescent adhesive 612, which is then applied to the first light-emitting chip 61. The first, second, and third colors are mixed above the LED package 61 and the second light-emitting chip 62 to produce white light. In this embodiment, since the LED package 61p contains phosphor powder that can produce a third color, this eliminates the need for a phosphor film on the LED light-emitting device, reducing costs.

[0117] In the present embodiment, the LED package device 61p is provided with a layer of white glue 613 on the fluorescent glue 612 to protect the fluorescent glue 612. In other embodiments, the white glue 613 may not be provided.

[0118] In this embodiment, the first light-emitting chip 61 is a blue light chip, and the LED packaging device 61p fluorescent glue contains β-Sialon type phosphor, which can be excited by blue light to produce green light, thereby mixing with the red light generated by the second light-emitting chip 62 and the blue light generated by the first light-emitting chip 61 to produce high color gamut white light.

[0119] In this embodiment, there is no light-blocking structure on the side of the LED package device 61p, and light can be emitted from the top and four sides, which has the advantage of high light extraction efficiency.

[0120] In this embodiment, referring to the examples in Figures 2-1, 2-2, and 2-3, in the example shown in Figure 2-1, the light source assembly 60b may include an LED package 61p and a second light-emitting chip 62, which are arranged side by side; in the example shown in Figure 2-2, the light source assembly 60 may also include an LED package 61p and two second light-emitting chips 62, wherein the two second light-emitting chips 62 may be respectively arranged on both sides of the LED package 61p; in the example shown in Figure 2-3, the light source assembly 60 may include an LED package 61p and four second light-emitting chips 62, wherein two second light-emitting chips 62 are arranged longitudinally on each side of the LED package 61p.

[0121] In this embodiment, the second light-emitting chip 62 is a red quantum dot LED chip based on a blue light chip, and its multi-quantum well light-emitting layer 622 emits blue light. Thus, the second light-emitting chip 62 in this embodiment is structurally similar to the first light-emitting chip 61, and both can be GaN-based light-emitting chips. Their control voltage and control current can be the same, facilitating circuit control.

[0122] As shown in Figures 2-7, the light-emitting device provided in this embodiment also includes a film assembly 70 composed of multiple optical films. Film assembly 70 includes optical films such as a brightness enhancement film and a diffusion film, but does not include a fluorescent film. To protect the chipset 60b, the chipset 60b also includes a lens 90 that covers the first light-emitting chip 61 and the LED package 61p.

[0123] In this embodiment, other contents not specifically described are the same as the corresponding contents of the fourth embodiment.

[0124] Example 6

[0125] The difference between this embodiment and the fourth embodiment is that in this embodiment, a third light-emitting chip 63 can be used to generate light of a third color, replacing the third color light generated by the phosphor film 71 in the first embodiment when it is excited, thereby eliminating the phosphor film 71. Specifically:

[0126] With reference to Figures 2-8 and 2-7, the present application also provides another light-emitting device, comprising at least one chipset 60c consisting of a first light-emitting chip 61, a second light-emitting chip 62, and a third light-emitting chip 63, and a circuit electrically connected to the chipset 60c. The chipset 60c includes at least one of the first light-emitting chips 61, at least one second light-emitting chip 62, and at least one third light-emitting chip 63, wherein the first light-emitting chip 61, the second light-emitting chip 62, and the third light-emitting chip 63 are all flip-chips. The first light-emitting chip 61 is configured to emit light of a first color. The second light-emitting chip 62 in this embodiment is the same as the second light-emitting chip in Example 4. The second light-emitting chip 62 emits light of a second color. The third light-emitting chip 63 is configured to emit light of a third color. The first color, the second color, and the third color are mixed above the chipset 60c to form white light.

[0127] In this embodiment, the first chip 61 is preferably a blue light chip, the second chip 62 is a red light quantum dot LED chip, and the third chip 63 is preferably a green light chip or a green light quantum dot LED chip. In one example, the red light quantum dot LED chip is preferably a red light quantum dot LED chip based on a blue light chip (the light emitted by the multi-quantum well light-emitting layer is blue light). In another example, the green light quantum dot LED chip is preferably a green light quantum dot LED chip based on a blue light chip (the light emitted by the multi-quantum well light-emitting layer is blue light). Therefore, the first light-emitting chip 61 of this embodiment has a similar structure to the second light-emitting chip 62 and the third light-emitting chip 63, and can all be GaN-based light-emitting chips. The control voltage and control current of the three can be the same, which facilitates circuit control.

[0128] Referring to Figures 2-7 (reference numeral 60b in Figures 2-7 may also represent chipset 60c), similar to the fifth embodiment, the light-emitting device provided in this embodiment further includes a film assembly 70 composed of multiple optical films. Film assembly 70 includes optical films such as a brightness enhancement film and a diffusion film, but does not include a phosphor film. To protect chipset 60c, chipset 60c also includes a lens 90 that covers the first light-emitting chip 61, the second light-emitting chip 62, and the third light-emitting chip.

[0129] In this embodiment, other contents not specifically described are the same as the corresponding contents of the fourth embodiment.

[0130] Example 7

[0131] With reference to Figures 2-9 and 2-10, the present application further provides an LED package device 60d, comprising a lead frame 601 and a package component 602. Package component 602 has a recess 603, with a portion of lead frame 601 exposed at the bottom of recess 603, forming pads for soldering light-emitting chips 61 and 62. Light-emitting chips 61 and 62 are disposed at the bottom of recess 603. The light-emitting chips include a first light-emitting chip 61 and a second light-emitting chip 62, both of which are flip-chips. First light-emitting chip 61 is configured to emit light of a first color; second light-emitting chip 62 is configured to emit light of a second color. In this embodiment, second light-emitting chip 62 is identical to second light-emitting chip 62 in Example 4 and will not be further described in this embodiment. Encapsulation adhesive 604 is disposed within recess 603 of package component 602, covering first and second light-emitting chips 61 and 62. Encapsulation adhesive 604 is configured to protect first and second light-emitting chips 61 and 62.

[0132] The LED package 60d in this embodiment can only generate light of the first color and the second color. If white light is to be generated, a third color needs to be mixed.

[0133] Referring to Figures 2-10, this embodiment further provides a light-emitting device comprising the aforementioned LED package 60d and a film assembly 70 comprised of multiple optical films. The film assembly 70 in this embodiment has the same or similar structure as that in Example 4 and also includes a phosphor film 71. Within this phosphor film 71 is a phosphor that emits a third color of light in response to the first color of light emitted by the first light-emitting chip 61. In this embodiment, the first light-emitting chip 61 is preferably a blue light chip; the second light-emitting chip 62 is preferably a red quantum dot LED chip; and the phosphor is preferably a green phosphor, preferably a β-sialon nitride phosphor.

[0134] In this embodiment, the first color is preferably blue, the second color is preferably red, and the third color is preferably green. The first color, the second color, and the third color are mixed above the first light emitting chip 61 and the second light emitting chip 62 and the phosphor film 71 to form white light.

[0135] In this embodiment, since the package body 60d is already provided with a packaging glue 604 to protect the first chip 21 and the second chip 22, there is no need to provide a lens 90 on the first chip 21 and the second chip 22 as in the fourth embodiment.

[0136] Example 8

[0137] Referring to Figures 2-11 and 2-12, this application also provides an LED package device 60e. Unlike the seventh embodiment, in this embodiment, a fluorescent adhesive 605 is provided within the recess 603 of the package component 602, covering the first and second light-emitting chips 61 and 62. The fluorescent adhesive 605 contains phosphor powder that is excited by the first color of light emitted by the first light-emitting chip 61 and emits a third color of light. The first, second, and third colors are mixed above the first and second light-emitting chips 61 and 62 to form white light.

[0138] In this embodiment, the first light-emitting chip 61 is preferably a blue light chip; the second light-emitting chip 62 is preferably a red light quantum dot LED chip; the phosphor is preferably a green phosphor, preferably a β-sialon nitride phosphor.

[0139] 2-12 , this embodiment further provides a light-emitting device, comprising the above-mentioned LED package 60e, and a film group 70 composed of a plurality of optical films, wherein the film group 70 in this embodiment has the same or similar structure as the film group in Example 5, and no phosphor film 71 is provided, thereby reducing costs.

[0140] Other contents not specifically described are the same as those in the fourth embodiment and will not be described in detail in this embodiment.

[0141] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A quantum dot LED chip, characterized in that: It includes a carrier and a multi-quantum well light-emitting layer. The carrier is made of a light-transmitting solid material. There are multiple nanopores on the surface or inside of the carrier. The nanopores are loaded with quantum dot materials. The carrier is arranged above the multi-quantum well light-emitting layer. The light emitted by the multi-quantum well light-emitting layer can excite the quantum dot material to convert the wavelength emitted by the chip.

2. The quantum dot LED chip according to claim 1, characterized in that: It also includes a coating layer, which is made of a light-transmitting material and is coated on the outer surface of the carrier. The coating layer includes at least two organic layers and at least one inorganic layer, and the organic layers and the inorganic layers are alternately arranged from the inside to the outside in the thickness direction of the coating layer; the number of layers of the coating layer is set to an odd number of layers, and the innermost layer and the outermost layer in the thickness direction of the coating layer are both set to organic layers, and the organic layer located in the innermost layer is in direct contact with the carrier; the thickness of the organic layer located in the innermost layer is greater than or equal to 100nm, and the thickness range of the organic layers and the inorganic layers in the remaining layers is: 40nm~50nm.

3. The quantum dot LED chip according to claim 1, characterized in that: The material of the organic layer is acrylic acid, the material of the inorganic layer is any one of AlN, Al2O3, Si4N3, and SiO2; and the carrier is glass.

4. The quantum dot LED chip according to claim 1, characterized in that: The chip also includes a bonding layer and an epitaxial layer, one side of the bonding layer is bonded to the carrier, and the other side is connected to the epitaxial layer, the epitaxial layer includes an N-type semiconductor layer and a P-type semiconductor layer, and the multi-quantum well light-emitting layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer, an electrode is arranged on the outermost side of the epitaxial layer, and the electrode includes a first electrode electrically connected to the N-type semiconductor layer and a second electrode connected to the P-type semiconductor layer, and the side surface of the epitaxial layer is coated with a light-blocking adhesive layer.

5. A light-emitting device, comprising a fluorescent film and at least one chipset consisting of a first light-emitting chip and a second light-emitting chip, and a circuit electrically connected to the chipset; the chipset comprises at least one of the first light-emitting chip and at least one of the second light-emitting chip, wherein: The first light-emitting chip and the second light-emitting chip are both flip chips; the first light-emitting chip is used to emit light of a first color; the second light-emitting chip includes the quantum dot LED chip as shown in claim 1, and the light emitted by the multi-quantum well light-emitting layer of the second light-emitting chip is used to excite the quantum dot material to emit light of a second color; the phosphor film covers the first light-emitting chip and the second light-emitting chip, and the phosphor film contains phosphor for emitting light of a third color when excited by the light of the first color emitted by the first light-emitting chip; the first color, the second color and the third color are mixed above the phosphor film to form white light; the first color is blue; the second color is one of red or green; the third color is one of green or red, and the third color is different from the second color; the nanopore is provided on the light-transmitting substrate of the second light-emitting chip and / or on the semiconductor material layer between the light-transmitting substrate and the multi-quantum well light-emitting layer; the quantum dot material includes quantum dots and a light-transmitting sealing material for sealing the quantum dots in the nanopore; the light-transmitting sealing material wraps the quantum dot particles to protect the quantum dot particles from water and oxygen and to a certain extent block heat.

6. The light emitting device according to claim 6, characterized in that: The first light-emitting chip is a blue light LED chip; the first color is blue; the light emitted by the multi-quantum well light-emitting layer of the second light-emitting chip is blue light, and the quantum dot material is red light quantum dots; the second color is red, and the red light quantum dots are excited by the blue light emitted by the second light-emitting chip to emit red light; the phosphor film contains green phosphor; and the green phosphor is a β-Sialon type phosphor.

7. The light emitting device according to claim 6, characterized in that: The chipset also includes a lens covering the first light-emitting chip and the second light-emitting chip; there are multiple chipsets, and the multiple chipsets are arranged in a matrix; the circuit includes a first circuit for controlling the first light-emitting chip in each chipset, and a second circuit independent of the first circuit for controlling the second light-emitting chip; the control voltage of each of the first light-emitting chip and the second light-emitting chip is the same; the substrate of the second light-emitting chip is a sapphire substrate.

8. A light emitting device, characterized in that: It comprises at least one light source assembly consisting of a second light-emitting chip and an LED packaging device, and a circuit electrically connected to the light source assembly; the LED packaging device comprises a substrate, a first light-emitting chip and a fluorescent glue; the first light-emitting chip is used to emit light of a first color; the second light-emitting chip is used to emit light of a second color; the fluorescent glue covers the first light-emitting chip, and the fluorescent glue contains fluorescent powder used to be excited by the first color light emitted by the first light-emitting chip and emit light of a third color; wherein the first light-emitting chip is a flip chip or a face-up chip, and the second light-emitting chip is a flip chip; the second light-emitting chip comprises the quantum dot LED chip according to claim 1; the first color, the second color and the third color are mixed above the LED packaging device and the second light-emitting chip to form white light.

9. A light emitting device, characterized in that: At least one chipset consisting of a first light-emitting chip, a second light-emitting chip and a third light-emitting chip, and a circuit electrically connected to the chipset; the chipset includes at least one of the first light-emitting chip, at least one of the second light-emitting chip and at least one third light-emitting chip, wherein the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are all flip chips; the first light-emitting chip is used to emit light of a first color; the second light-emitting chip is used to emit light of a second color; the second light-emitting chip includes the quantum dot LED chip of claim 1; the third light-emitting chip is used to emit light of a third color; the first color, the second color and the third color are mixed above the chipset to form white light.

10. An LED packaging device, comprising a lead frame and a packaging component, the packaging device having a recess, a portion of the lead frame being exposed at the bottom of the recess to form a pad for welding a light-emitting chip, the light-emitting chip being arranged at the bottom of the recess, the light-emitting chip comprising a first light-emitting chip and a second light-emitting chip, the first light-emitting chip and the second light-emitting chip being both flip chips; the first light-emitting chip being used to emit light of a first color; the second light-emitting chip being used to emit light of a second color; the second light-emitting chip comprising the quantum dot LED chip according to claim 1, the fluorescent glue covering the first light-emitting chip and the second light-emitting chip being arranged in the recess of the packaging component, the fluorescent glue containing fluorescent powder for emitting light of a third color under the excitation of the first color light emitted by the first light-emitting chip; the first color, the second color and the third color are mixed above the first light-emitting chip and the second light-emitting chip to form white light.

Images