Optoelectronic device and method for manufacturing an optoelectronic device

Abstract

An optoelectronic device is provided, which comprises a carrier (2), a housing (3), an optoelectronic component (4), and a reflective layer (5). The carrier (2) comprises a first part (21), a second part (22) and a third part (23), the first part (21) being located between the second part (22) and the third part (23) and being laterally spaced apart from the second part (22) and the third part (23). The housing (3) comprises a side wall (31) defining a cavity (32) and a bottom portion (33) in the cavity (32), the bottom portion (33) mechanically connecting the first part (21) to the second part (22) and the third part (23). The optoelectronic component (4) is arranged on a mounting surface (21a) of the first part (21). A boundary structure (6) is located between the side wall (31) of the housing (3) and the optoelectronic component (4), the boundary structure (6) being provided by the first part (21) of the carrier (2) and / or by the bottom portion (33) of the housing (3). The reflective layer (5) covers the side wall (31) of the housing (3) and the boundary structure (6), the boundary structure (6) being configured to prevent material of the reflective layer (5) from creeping onto the optoelectronic component (4). Further, a method for manufacturing an optoelectronic device is provided.

Description

[0001] Description

[0002] OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

[0003] An optoelectronic device and a method for manufacturing an optoelectronic device are speci fied .

[0004] It is an obj ect to provide an ef ficient optoelectronic device . For example , the optoelectronic device can have enhanced ef ficiency due to an improved brightness .

[0005] A further obj ect is to provide an ef ficient method for manufacturing an optoelectronic device .

[0006] According to at least one embodiment of the optoelectronic device , the optoelectronic device comprises a carrier . For instance , the carrier can be the mechanically supporting part of the optoelectronic device . The carrier can comprise a first part , for example at least a first part . The first part of the carrier can comprise a mounting surface . The mounting surface can be configured or adapted to receive an optoelectronic component . In other words , an optoelectronic component can be arranged on the first part of the carrier, in particular on the mounting surface of the first part of the carrier . The carrier can further comprise a second part . The first part can be laterally spaced apart from the second part .

[0007] Additionally, the carrier can comprise a third part . Then, it is also possible that the first part is arranged laterally spaced apart from the third part . Additionally, the second part can be spaced apart from the third part . For example , the first part , the second part and the third part are not connected with each other, e . g . not in direct contact with each other . In particular, at least two parts may not be electrically conductively connected with each other . Thus , for example , the carrier can comprise two parts of opposite electrical polarity . The carrier can provide an electrical contact for an optoelectronic component arranged on the mounting surface of the first part of the carrier . For example , the carrier is or comprises a leadframe . The carrier can comprise or consist of a metal , for example .

[0008] "Laterally" can refer to a lateral direction . The lateral direction or lateral directions extend perpendicular to a vertical direction . For example , the vertical direction is perpendicular to a main extension plane of the carrier, for instance to the mounting surface of the first part of the carrier . The carrier can also comprise a third part .

[0009] According to at least one embodiment of the optoelectronic device , the optoelectronic device comprises a housing . The housing can comprise a side wall and / or a bottom portion .

[0010] For example , the side wall of the housing can be arranged on a side of the carrier on which the mounting surface is arranged . For example , the side wall is arranged on at least the first part , the second part and / or the third part of the carrier . In particular, the side wall of the housing can be arranged on the first part , the second part and the third part of the carrier . For example , the side wall of the housing can surround the mounting surface of the first part of the carrier along the lateral directions . For instance , the side wall of the housing can completely surround the mounting surface of the first part of the carrier laterally . It is possible that the side wall is part of a housing body which laterally surrounds the carrier . In this way, a cavity can be formed by the side wall of the housing . The mounting surface of the first part of the carrier can be arranged in the cavity and / or form a bottom of the cavity .

[0011] The bottom portion of the housing can be arranged between the parts of the carrier . For example , the bottom portion connects the parts of the carrier . This can mean that the bottom portion of the housing forms a mechanically supporting part of the optoelectronic device . Additionally or alternatively, the housing, e . g . the bottom portion of the housing, can be arranged on a side of the carrier opposing the mounting surface . For example , the carrier is embedded into the housing and / or into the bottom portion of the housing .

[0012] The housing, e . g . the side wall and / or the bottom portion of the housing, can consist of or can comprise a resin, for example an epoxy . For example , the housing can be formed of an epoxy mold compound ( short : EMC ) . For example , at least the bottom portion of the housing can comprise or consist of an insulating material .

[0013] According to at least one embodiment of the optoelectronic device , the optoelectronic device comprises an optoelectronic component . The optoelectronic component can be configured to emit electromagnetic radiation, for example . For example , the optoelectronic component is or comprises a light-emitting diode ( LED) . In particular, the optoelectronic component can be or can comprise a volume emitter . This can mean that the optoelectronic component can be configured or adapted to emit electromagnetic radiation in at least two distinct directions , for instance in a plurality of directions . In other words , the optoelectronic component may emit electromagnetic radiation along the vertical direction, along at least one lateral direction and / or along all lateral directions .

[0014] The optoelectronic component can comprise a mounting side , a side face and a top face . The top face can be a side of the optoelectronic component opposing the mounting side . The side face can extend perpendicular or at least nearly perpendicular to the mounting side and / or the top face . The mounting side of the optoelectronic component can be configured to be attached to the mounting surface of the carrier . For instance , the optoelectronic component can emit electromagnetic radiation at the exposed sides , e . g . of a sapphire chip comprised by the optoelectronic component . It is also possible , that the optoelectronic component consists of a sapphire chip . The optoelectronic component can be configured to emit electromagnetic radiation at the top face and / or the side face . For example , the optoelectronic component is or comprises a light-emitting diode ( LED) .

[0015] According to at least one embodiment of the optoelectronic device , the optoelectronic device comprises a reflective layer . The reflective layer can be configured to reflect electromagnetic radiation, for instance the electromagnetic radiation emitted by the optoelectronic component . The reflective layer can comprise TiCy . For example , the reflective layer comprises a polysiloxane , in particular a silicone material . Scattering particles , e . g . comprising or consisting of TiCy can be embedded into the polysiloxane or the silicone material . According to at least one embodiment of the optoelectronic device , the carrier comprises a first part , a second part and a third part . The first part can be located between the second part and the third part . The first part can be laterally spaced apart from the second part and the third part . The first part , the second part and the third part of the carrier can be formed from one common material or from common materials , for example .

[0016] According to at least one embodiment of the optoelectronic device , the housing comprises a side wall defining a cavity . The housing can comprise a bottom portion in the cavity . The bottom portion can mechanically connect the first part to the second part and the third part . For example , the housing can be formed in one piece . This can mean that the side wall of the housing and the bottom portion of the housing can directly adj oin each other . The side wall and the bottom portion of the housing can be formed from the same material or from di f ferent materials .

[0017] According to at least one embodiment of the optoelectronic device , the optoelectronic component is arranged on the mounting surface of the first part . It is also possible , that more than one optoelectronic component , e . g . the optoelectronic component and further optoelectronic components , can be arranged or mounted on the mounting surface of the first part of the carrier .

[0018] According to at least one embodiment of the optoelectronic device , a boundary structure is located between the side wall of the housing and the optoelectronic component . The boundary structure can be provided by the first part of the carrier and / or by the bottom portion of the housing . For instance , the boundary structure comprises a trench of the first part of the carrier and / or an elevation of the bottom portion of the housing . The trench and / or the elevation can laterally surround the mounting surface of the first part of the carrier .

[0019] According to at least one embodiment of the optoelectronic device , the reflective layer covers the side wall of the housing and the boundary structure . It is possible , that the boundary structure is only partially covered by the reflective layer . The boundary structure can be configured to prevent material of the reflective layer from creeping onto the optoelectronic component .

[0020] In at least one embodiment , the optoelectronic device comprises a carrier, a housing, an optoelectronic component and a reflective layer . The carrier comprises a first part , a second part and a third part , the first part being located between the second part and the third part and being laterally spaced apart from the second part and the third part . The housing comprises a side wall defining a cavity and a bottom portion in the cavity, the bottom portion mechanically connecting the first part to the second part and the third part . The optoelectronic component is arranged on a mounting surface of the first part . A boundary structure is located between the side wall of the housing and the optoelectronic component , the boundary structure being provided by the first part of the carrier and / or by the bottom portion of the housing . The reflective layer covers the side wall of the housing and the boundary structure , the boundary structure being configured to prevent material of the reflective layer from creeping onto the optoelectronic component . An idea of this embodiment is to provide an optoelectronic device , wherein the boundary structure prevents the reflective layer from creeping onto the optoelectronic component , for instance on a side face and / or on a top face of the optoelectronic component . Without a boundary structure , during dispensing or j etting of reflective material forming the reflective layer, the reflective material is likely to creep up the side face of the optoelectronic component due to surface wetting, for example . I f the optoelectronic component , in particular the side face or a top face of the optoelectronic component , is covered with a reflective layer, the output of the optoelectronic component can be decreased, in particular for an optoelectronic component comprising or being a volume emitter .

[0021] A further idea of the optoelectronic device is to cover all or at least most of the surfaces inside the cavity with the reflective layer . This can enhance the brightness of the optoelectronic device . For example , electromagnetic radiation, e . g . light of the optoelectronic component being emitted towards the carrier and / or the side wall of the housing can be reflected .

[0022] According to at least one embodiment of the optoelectronic device , the reflective layer comprises a first partial layer and a second partial layer . The first partial layer may at least partly cover the first part of the carrier and / or the boundary structure . The second partial layer may cover the side wall of the housing, the second part of the carrier, the third part of the carrier and / or the boundary structure . In top view, an interface between the first partial layer and the second partial layer can at least partially overlap with the boundary structure , or both the first partial layer and the second partial layer overlap with the boundary structure . The first partial layer and the second partial layer can comprise or can be formed of one common material or from common materials . It is also possible that the first partial layer and the second partial layer comprise di f ferent reflective materials and / or di f ferent percentages of scattering particles .

[0023] By forming the reflective layer comprising two partial layers , it can be ensured to cover exposed parts of the housing and / or the carrier inside the cavity, while the mounting surface of the first part of the carrier and / or the side face of the optoelectronic component may not be covered by the reflective layer . For instance , it is possible to form the first partial layer prior to mounting the optoelectronic component . Then, in particular, the second partial layer can be arranged at a distance of the optoelectronic component .

[0024] According to at least one embodiment of the optoelectronic device , the boundary structure comprises a trench of the first part of the carrier . The trench can surround the mounting surface of the first part in lateral directions . The trench can be a deepening part of the first part of the carrier . For example , the trench may not extend completely through the first part of the carrier along the vertical direction . For example , the mounting surface can be defined by the trench . This can mean that the si ze of the trench, for instance the width of the trench can be chosen to obtain a desired si ze of the mounting surface . The width of the trench can refer to an extension of the trench along the lateral direction . The trench can be configured or adapted to prevent the reflective material of the reflective layer, e . g . of the first partial layer and / or the second partial layer from reaching the mounting surface . For example , the trench is meant for preventing a reflective inner partial layer from reaching the mounting surface . This can mean that during the application of the reflective material , the trench prevents the reflective material from reaching or from creeping onto the mounting surface of the first part of the carrier . For example , this can be achieved by an edge of the trench, for instance by the edge of the trench adj acent to the mounting surface .

[0025] Additionally or alternatively, the trench can be configured or adapted to allow for the formation of the reflective layer, in particular of the first partial layer of the reflective layer with a suf ficient thickness .

[0026] According to at least one embodiment of the optoelectronic device , the boundary structure comprises an elevation of the bottom portion of the housing . In other words , the elevation can be formed of the housing material . This can mean that the elevation is formed concurrently with the side wall of the housing, for instance via trans fer molding . For example , the elevation can be formed of a reflective material . The elevation can protrude beyond the mounting surface of the first part of the carrier in a vertical direction . The elevation can be formed at least in intermediate regions between the first part and the second part and / or between the first part and the third part of the carrier . For example , the elevation surrounds the mounting surface of the first part and / or the first part of the carrier . For instance , the elevation can completely surround the mounting surface , the first part of the carrier and / or the optoelectronic component . It is possible , that a height of the elevation is at least 30% , for example at least 50% or at least 70% of a height of the optoelectronic component . The height can correspond to an extension along the vertical direction . A width of the elevation can be between 50 pm and 500 pm, inclusive . For example , the width of the elevation is between 100 pm and 150 pm, inclusive .

[0027] The boundary structure , for instance in form of the elevation, can be referred to as stoppage ring . In top view, the elevation can comprise a square , circular or elliptical ring shape . For example , the elevation is symmetrically arranged around the optoelectronic component or the mounting surface of the first part of the carrier .

[0028] The elevation can define an inner region and an outer region of the cavity . This can mean that an inner region and an outer region of the cavity are separated from each other by the elevation . The inner region can be arranged inside the boundary structure , for instance inside the stoppage ring formed by the elevation . The outer region can be arranged between the boundary structure , for instance in form of the elevation, and the side wall of the housing .

[0029] The elevation or the boundary structure can be configured or adapted to prevent the reflective layer, in particular the second partial layer of the reflective layer from approaching or reaching the first part of the carrier, the mounting surface and / or the optoelectronic component arranged on the mounting surface . Due to the elevation, the application of the reflective material , e . g . the dispension, can be better controlled . For example , the control over the formation of a meniscus is improved . This can prevent a depletion of the reflective material in the center of the meniscus . It is also possible , that the thickness homogeneity or uni formity of the reflective layer is improved .

[0030] According to at least one embodiment of the optoelectronic device , the boundary structure completely surrounds the mounting surface of the first part of the carrier in lateral directions .

[0031] In this way, the boundary structure can prevent the first partial layer and the second partial layer form reaching the mounting surface and / or the optoelectronic component on all sides of the mounting surface and / or of the optoelectronic component . For example , the boundary structure is configured to prevent the reflective layer from reaching the mounting surface . Because the optoelectronic component is mounted, for instance , after the reflective layer is cured, the optoelectronic component is free from the reflective layer . This can mean that the side face of the optoelectronic component is not covered by the reflective layer all around the optoelectronic component . In other words , the side face / s of the optoelectronic component may be completely or at least approximately completely free of the reflective layer .

[0032] According to at least one embodiment of the optoelectronic device , the boundary structure comprises both a trench of the first part of the carrier and an elevation of the bottom portion of the housing . That the reflective layer covers the boundary structure can mean that the first partial layer of the reflective layer covers the trench . The first partial layer of the reflective layer can cover the trench completely . For instance , the second partial layer of the reflective layer does not or does not completely cover the trench . It is also possible , that the first partial layer of the reflective layer does not or does not completely cover the elevation, for example . Also the second partial layer of the reflective layer may not or may not completely cover the elevation . Alternatively, the first partial layer of the reflective layer and / or the second partial layer of the reflective layer can cover, for instance completely cover the elevation of the boundary structure .

[0033] According to at least one embodiment of the optoelectronic device , the trench of the boundary structure is laterally spaced apart from the elevation of the boundary structure . A portion of the first part of the carrier can be arranged between the trench and the elevation . This portion of the first part can be configured as a support for a mold used during manufacturing the housing, for instance the elevation . Alternatively or additionally, this portion of the first part can be configured to prevent molding material , e . g . used during manufacturing of the housing, from flowing into the trench and / or from filling up the trench .

[0034] According to at least one embodiment of the optoelectronic device , each of the trench and the elevation completely surrounds the mounting surface in lateral directions . It is however, also possible that only the trench completely surrounds the mounting surface and the elevation does not completely surround the mounting surface in lateral directions . Alternatively, it is also possible that only the elevation completely surrounds the mounting surface . Alternatively, both the trench and the elevation can partially, for example only partially surround the mounting surface in lateral directions .

[0035] According to at least one embodiment of the optoelectronic device , a side face or all side faces of the optoelectronic component is / are free of the reflective layer . In this way, electromagnetic radiation can ef ficiently be emitted at the side face of the optoelectronic component . This can increase the output and / or the brightness of the optoelectronic component and / or of the optoelectronic device .

[0036] According to at least one embodiment of the optoelectronic device , the reflective layer completely covers the boundary structure . Due to the boundary structure being completely covered by the reflective layer, no or at least less electromagnetic radiation emitted by the optoelectronic component can be absorbed by the boundary structure . In this way, the output and / or the brightness of the optoelectronic device can be improved .

[0037] According to at least one embodiment of the optoelectronic device , a width of the trench is at least 100 pm . For example , the width of the trench can be at least 150 pm, at least 200 pm or at least 500 pm, for example . Additionally or alternatively, the width of the trench can be at most 1 mm, for example at most 500 pm or at most 200 pm . In particular, the width of the trench can be adj usted to the desired si ze of the mounting surface of the first part of the carrier . For example , in case the boundary structure comprises only the trench, the width of the trench can be larger than the width of the trench in case the boundary structure comprises the trench and the elevation . In case the boundary structure comprises only the trench, it is possible that the trench extends into the bottom portion of the housing along the lateral direction . A depth of the trench can be at least 50 pm, for example at least 70 pm or at least 100 pm . The depth of the trench can be at most 500 pm, for example at most 200 pm or at most 100 pm .

[0038] In case the boundary structure comprises only the trench, the trench can be suf ficiently large . Due to a suf ficiently large trench, it can be ensured that no reflective material of the reflective layer creeps onto the mounting surface . In particular, due to the suf ficiently large trench, the second partial layer of the reflective layer can be dispensed suf ficiently away from the optoelectronic device . It is possible , that the second partial layer overlaps the first partial layer, e . g . the cured first partial layer . Due to the suf ficiently large trench, it can further be ensured that no reflective material of the second partial layer creeps onto the optoelectronic device . Additionally, a thickness of the reflective layer in the region of the trench can correspond or at least approximately correspond to the depth of the trench . In other words , the trench can completely or at least approximately completely be filled with the reflective layer .

[0039] Furthermore , a method for manufacturing an optoelectronic device is provided . The method for manufacturing an optoelectronic device can be performed for manufacturing the optoelectronic device described herein . This means for instance that all features disclosed for the optoelectronic device are also disclosed for the method for manufacturing an optoelectronic device and vice-versa . According to at least one embodiment of the method for manufacturing an optoelectronic device , the optoelectronic device comprises a carrier, a housing, an optoelectronic component and a reflective layer . The optoelectronic device can be the optoelectronic device described herein .

[0040] According to at least one embodiment , the method for manufacturing an optoelectronic device comprises providing the carrier and the housing . The carrier can comprise a first part , a second part and a third part . The first part can be located between the second part and the third part . The first part can be laterally spaced apart from the second part and the third part . The housing can comprise a side wall defining a cavity and a bottom portion in the cavity . The bottom portion can mechanically connect the first part to the second part and the third part . A boundary structure may be provided between the side wall of the housing and a mounting surface of the first part . The boundary structure can be provided by the first part of the carrier and / or by the bottom portion of the housing .

[0041] According to at least one embodiment the method for manufacturing an optoelectronic device comprises forming a first partial layer of the reflective layer . The first partial layer can at least partly cover the boundary structure . The first partial layer may not cover the side wall of the housing . For example , the first partial is only arranged within the inner region of the cavity of the optoelectronic device .

[0042] According to at least one embodiment the method for manufacturing an optoelectronic device comprises arranging the optoelectronic component on the mounting surface of the first part after forming the first partial layer of the reflective layer . In this way, it can be ensured that the first partial layer of the reflective layer is not applied onto the optoelectronic component , in particular onto the side face / s and / or the top face of the optoelectronic component .

[0043] According to at least one embodiment , the method for manufacturing an optoelectronic device comprises , after arranging the optoelectronic component , forming a second partial layer of the reflective layer to cover at least the side wall of the housing . The boundary structure can be configured to prevent material of the reflective layer from creeping onto the optoelectronic component . The second partial layer of the reflective layer can only be applied to the outer region of the cavity, for example . This can mean that the second partial layer is applied at a distance from the optoelectronic component .

[0044] In at least one embodiment of the method for manufacturing an optoelectronic device comprising a carrier, a housing, an optoelectronic component and a reflective layer, the method comprises providing the carrier and the housing, wherein the carrier comprises a first part , a second part and a third part , the first part being located between the second part and the third part and being laterally spaced apart from the second part and the third part . The housing comprises a side wall defining a cavity and a bottom portion in the cavity, the bottom portion mechanically connecting the first part to the second part and the third part . A boundary structure is provided between the side wall of the housing and a mounting surface of the first part , the boundary structure being provided by the first part of the carrier and / or by the bottom portion of the housing . The method comprises forming a first partial layer of the reflective layer, the first partial layer at least partly covering the boundary structure and not covering the side wall of the housing . The method comprises arranging the optoelectronic component on the mounting surface of the first part after forming the first partial layer of the reflective layer, and after arranging the optoelectronic component , forming a second partial layer of the reflective layer to cover at least the side wall of the housing, wherein the boundary structure is configured to prevent material of the reflective layer from creeping onto the optoelectronic component .

[0045] An idea of this embodiment is to apply the reflective layer, in particular the first partial layer of the reflective layer prior to arranging and attaching the optoelectronic component . This can ef ficiently prevent creeping of the reflective material of the first partial layer onto the optoelectronic component . Due to the boundary structure and due to arranging the second partial layer at a distance from the optoelectronic device , a creeping of the reflective material of the second partial layer onto the optoelectronic component can be prevented or at least almost avoided .

[0046] According to at least one embodiment of the method for manufacturing an optoelectronic device , after applying the first partial layer to at least partly cover the boundary structure and the first part of the carrier, the second partial layer is applied not only on the side wall of the housing but also on the second part and on the third part of the carrier . This can mean that the side wall of the housing and exposed parts of the carrier, for example except for the mounting surface of the first part of the carrier, facing the cavity are covered by the reflective layer formed of the first partial layer and of the second partial layer .

[0047] According to at least one embodiment of the method for manufacturing an optoelectronic device , the first partial layer and the second partial layer are applied in liquid form . The first partial layer can be cured prior to applying the second partial layer . The second partial layer can also be cured . After the respective curing, the first partial layer and the second partial layer can be in solid form . For example , the first partial layer and / or the second partial layer can be cured by heating . Additionally or alternatively, the first partial layer and / or the second partial layer can be cured by irradiation, for instance with light in the UV range .

[0048] According to at least one embodiment of the method for manufacturing an optoelectronic device , the optoelectronic component is electrically connected via electrical connection / s prior to applying the second partial layer . For example , the optoelectronic component can be electrically connected using wire bonds , in particular two wire bonds . The wire bonds can electrically connect the optoelectronic component to the second part of the carrier and / or to the third part of the carrier, for example .

[0049] According to at least one embodiment of the method for manufacturing an optoelectronic device , the optoelectronic component described herein is manufactured .

[0050] Further advantages and advantageous designs and further developments of the optoelectronic device and the method for manufacturing an optoelectronic device will become apparent from the following exemplary embodiments , which are described below in association with the figures .

[0051] Figure 1 shows a schematic sectional view of a comparative example of an optoelectronic device .

[0052] Figure 2 shows a schematic sectional view of an optoelectronic device according to an exemplary embodiment .

[0053] Figure 3 shows a schematic sectional view of an optoelectronic device according to a further exemplary embodiment .

[0054] Figure 4 shows a flow diagram of a method for manufacturing an optoelectronic device according to an exemplary embodiment .

[0055] Figures 5 , 6 , 7 and 8 show schematic sectional views of steps in a method for manufacturing an optoelectronic device according to an exemplary embodiment .

[0056] Identical , similar or equivalent elements are marked with the same reference signs in the figures . The figures and the proportions of the elements represented in the figures among each other are not to be considered as true to scale . Rather, individual elements may be oversi zed for better representability and / or comprehensibility . Identical or ef fectively identical components and parts might be described only with respect to the figures where they occur first .

[0057] Their description is not necessarily repeated in successive figures . Figure 1 shows a schematic sectional view of a comparative example of an optoelectronic device . Here , surfaces of a housing and a carrier, except for a mounting surface , inside a cavity are not completely or not even almost completely covered by a reflective layer 5 . Additionally, the reflective layer 5 shown here does not comprise a first partial layer and a second partial layer and may be formed in a single process step .

[0058] Figure 2 shows a schematic sectional view of an optoelectronic device 1 according to an exemplary embodiment . The optoelectronic device 1 comprises a carrier 2 , a housing 3 , an optoelectronic component 4 and a reflective layer 5 .

[0059] The carrier 2 comprises a first part 21 , a second part 22 and a third part 23 . The first part 21 is located between the second part 22 and the third part 23 and is laterally spaced apart from the second part 22 and the third part 23 . The first part 21 of the carrier 2 can comprise a mounting surface 21a . The mounting surface 21a can be configured as a socket for an optoelectronic component 4 .

[0060] The housing 3 comprises a side wall 31 . The side wall 31 can define a cavity 32 . The side wall 31 can be oblique to a main extension plane of the carrier 2 . For example , a lateral extension of the cavity 32 increases along a vertical direction z with increasing distance from the carrier 2 . The housing 3 can comprise a bottom portion 33 in the cavity 32 . The bottom portion 33 can mechanically connect the first part 21 of the carrier to the second part 22 of the carrier . The bottom portion 33 of the housing can mechanically connect the first part 21 to the third part 23 of the carrier 2 . The housing 3 , in particular the side wall 31 of the housing 3 can be arranged on the first part 21 , the second part 22 and / or the third part 23 of the carrier 2 . In top view, the housing 3 can completely surround the mounting surface 21a of the first part 21 of the carrier 2 . In deviation from Figure

[0061] 2 , it is possible that housing 3 laterally surrounds the carrier 2 .

[0062] The bottom portion 33 of the housing 3 can be arranged between the first part 21 and the second part 22 , between the first part 21 and the third part 23 and / or between the second part 22 and the third part 23 . It is possible that in lateral directions , the first part 21 of the carrier 2 is completely surrounded by the bottom portion 33 . Additionally or alternatively, not shown, the bottom portion 33 of the housing 3 can be arranged on the side of the carrier 2 facing away from the optoelectronic component 4 . For example , the side of the carrier 2 opposing the mounting surface 21a can be completely covered by the bottom portion 33 of the housing

[0063] 3 . This can mean that the carrier 2 is embedded into the housing 3 .

[0064] Alternatively, the bottom portion 33 of the housing 3 can be flush with the carrier 2 on the side of the carrier 2 opposing the mounting surface 21a . It is also possible , that the bottom portion 33 of the housing 3 is flush with the carrier on the side of the carrier 2 facing the optoelectronic component 4 and / or the cavity 32 . Alternatively, the bottom portion 33 of the housing can protrude the carrier 2 on the side of the carrier facing the cavity 32 in a vertical direction z . In this case , the bottom portion 33 of the housing 3 comprises an elevation 62 as shown in Figure 2 . The optoelectronic component 4 is arranged on the mounting surface 21a of the first part 21 of the carrier 2 . This can mean that the optoelectronic component 4 is arranged in the cavity 32 . For example , the side wall 31 completely surrounds the optoelectronic component 4 . A lateral extension of the optoelectronic component 4 can correspond or at least essentially correspond to a lateral extension of the mounting surface 21a of the first part 21 of the carrier 2 along the same direction . For example , the lateral extension of the mounting surface 21a deviates at most 20% , at most 15% or at most 10% from the lateral extension of the optoelectronic component 4 . For example , the lateral extension of the optoelectronic component 4 can be smaller or larger than the lateral extension of the mounting surface 21a .

[0065] The optoelectronic component 4 comprises a side face 4a . The side face 4a of the optoelectronic component 4 can be perpendicular or at least approximately perpendicular to the mounting surface 21a of the first part 21 of the carrier 2 . The side face 4a of the optoelectronic component 4 can be free of or at least approximately free of the reflective layer 5 . This can mean that the reflective layer 5 is not arranged on the side face 4a or on any side faces 4a of the optoelectronic component 4 .

[0066] A boundary structure 6 is located between the side wall 31 of the housing 3 and the optoelectronic component 4 . The boundary structure 6 can be provided by the first part 21 of the carrier 2 . For example , the boundary structure 6 comprises a trench 61 of the first part 21 of the carrier 2 . The trench 61 can be formed in the first part 21 of the carrier 2 . For example , the trench 61 surrounds the mounting surface 21a of the first part 21 in all lateral directions x and y . A width of the trench can be at least 100 pm, at least 150 pm, at least 200 pm or at least 500 pm, for example . Additionally or alternatively, the width of the trench can be at most 1 mm, for example at most 500 pm or at most 200 pm . A depth of the trench can be at least 50 pm, for example at least 70 pm or at least 100 pm . The depth of the trench can be at most 500 pm, for example at most 200 pm or at most 100 pm .

[0067] Alternatively or additionally, the boundary structure 6 can be provided by the bottom portion 33 of the housing 3 . For example , shown here , the boundary structure 6 comprises the elevation 62 of the bottom portion 33 of the housing 3 . The elevation 62 can protrude beyond the mounting surface 21a of the first part 21 in the vertical direction z .

[0068] The trench 61 of the boundary structure 6 can be laterally spaced apart from the elevation 62 of the boundary structure 6 . For example , a portion of the first part 21 is arranged between the trench 61 and the elevation 62 . This portion and the mounting surface 21a can have the same vertical height .

[0069] The boundary structure 6 can be configured to prevent material of the reflective layer 5 from creeping onto the mounting surface 21a, onto the optoelectronic component 4 , in particular onto the side face 4a of the optoelectronic component 4 .

[0070] In top view, the boundary structure 6 can completely surround the mounting surface 21a of the first part 21 of the carrier 2 . This can mean that the trench 61 or the elevation 62 or each of the trench 61 and the elevation 62 completely surrounds the mounting surface 21a, in particular the optoelectronic component 4 arranged on the mounting surface 21a .

[0071] The reflective layer 5 covers the side wall 31 of the housing 3 and the boundary structure 6 . The reflective layer 5 comprises a first partial layer 51 and a second partial layer 52 . The first partial layer 51 can at least partially cover the first part 21 of the carrier 2 and / or the boundary structure 6 . The second partial layer 52 can cover the side wall 31 of the housing 3 . For example , the second partial layer 52 completely covers the side wall 31 of the housing 3 .

[0072] Alternatively or additionally, the second partial layer 52 can cover the second part 22 and / or the third part 23 of the carrier 2 . It is also possible , that the second partial layer 52 covers the boundary structure 6 . The trench 61 of the boundary structure 6 can be free of the second partial layer 52 of the reflective layer 5 . For example , in top view, the second partial layer 52 does not overlap with the first part 21 of the carrier 2 , in particular with the trench 61 . As shown in Figure 2 , both the first partial layer 51 and the second partial layer 52 overlap with the boundary structure 6 . The first partial layer 51 can completely cover the trench 61 and partly cover the elevation 62 . The second partial layer 52 can partially or completely cover the elevation 62 . In top view, it is possible for the second partial layer 52 to partially cover the trench 51 .

[0073] The first partial layer 51 and the second partial layer 52 of the reflective layer 5 can form an interface . In top view, the interface between the first partial layer 51 and the second partial layer 52 can overlap with the boundary structure 6 . For example , the interface can partially overlap with the boundary structure 6 .

[0074] That the first partial layer 51 and the second partial layer 52 of the reflective layer 5 comprise an interface can mean that the first partial layer 51 and the second partial layer 52 are in direct contact with each other . Such an interface is veri fiable at the optoelectronic device 1 , particularly because the first partial layer 51 and the second partial layer 52 are formed one after the other and thus not simultaneously . It is also possible , that the second partial layer 52 overlaps the first partial layer 51 along the vertical direction z . For example , the first partial layer 51 and the second partial layer 52 form a continuous reflective layer 5 . In this case , the boundary structure 6 can be completely covered by the reflective layer 5 .

[0075] Alternatively, the first partial layer 51 can be arranged spaced apart from the second partial layer 52 . This can mean that the reflective layer 5 comprises at least two separate portions . Then, for example , a gap can be arranged between the first partial layer 51 and the second partial layer 52 . The gap can be arranged in the region of the boundary structure 6 . For example , the gap overlaps with the boundary structure 6 , in particular with the elevation 62 of the boundary structure 6 .

[0076] Figure 3 shows a schematic sectional view of an optoelectronic device 1 according to a further exemplary embodiment . The optoelectronic device 1 shown here di f fers from the optoelectronic device 1 shown in Figure 2 in that the boundary structure 6 of the optoelectronic device 1 does not comprise an elevation 62 . This can mean that the boundary structure 6 is formed or consists of the trench 61 . A width of the trench can be at least 100 pm, at least 150 pm, at least 200 pm or at least 500 pm, for example . Additionally or alternatively, the width of the trench can be at most 1 mm, for example at most 500 pm or at most 200 pm . A depth of the trench can be at least 50 pm, for example at least 70 pm or at least 100 pm . The depth of the trench can be at most 500 pm, for example at most 200 pm or at most 100 pm . For example , the width of the trench 61 and / or the depth of the trench 61 can be larger than the width and / or depth of the trench 61 shown in Figure 2 .

[0077] In Figure 3 , the trench 61 is formed as part of the first part 21 of the carrier 2 . For example , it is possible for the trench 61 to be only part of the first part 21 of the carrier 2 . For example , i f the trench 61 is only part of the first part 21 of the carrier 2 the molding practicability of the housing 3 can be improved . In deviation from Figure 3 , it is possible , not shown, that the trench 61 is additionally or alternatively formed as part of the second part 22 and / or of the third part 23 of the carrier 2 . Thus , the first part 21 , the second part 22 and / or the third part 23 of the carrier 23 may have a step-like structure . The first partial layer 51 can fill the trench 61 at least partially . For example , a surface of the first partial layer 51 can be flat .

[0078] Figure 4 shows a flow diagram of a method for manufacturing an optoelectronic device according to an exemplary embodiment . Prior to the process shown in Figure 4 , the carrier 2 and the housing 3 comprising the boundary structure 6 are provided . In a first step S I , the first partial layer 51 of the reflective layer 5 is applied . In particular, the first partial layer 51 can be applied in liquid form . In a second step S2, the first partial layer 51 can be cured. Subsequently, in a step S3, the optoelectronic component 4 is arranged on the mounting surface 21a of the first part 21 of the carrier 2. In a step S4, the optoelectronic component 4 is electrically connected. For example, the optoelectronic component 4 is electrically contacted using electrical connections 7, e.g. wire bonds. Subsequently, in step S5, the second partial layer 52 of the reflective layer 5 is applied in the cavity 32 and cured. For example, the steps SI to S5 are performed in the given order.

[0079] Figures 5, 6, 7 and 8 show schematic sectional views of steps in a method for manufacturing an optoelectronic device 1 according to an exemplary embodiment.

[0080] The method for manufacturing the optoelectronic device 1 comprises providing the carrier 2 and the housing 3 and forming a first partial layer 51 of the reflective layer 5, shown in Figure 1.

[0081] Providing the carrier 2 and the housing 3 can comprise the formation of an arrangement comprising the carrier 2 and the housing 3. For example, the first part 21, the second part 22 and the third part 23 of the carrier 2 are provided.

[0082] Subsequently, the mounting surface 21a of the first part 21 is defined by the formation of the trench 61 of the boundary structure 6. Alternatively, the trench 61 can be formed prior to a division of the carrier 2 into the first part 21, the second part 22 and the third part 23.

[0083] The housing 3 can be formed by transfer molding, for example. The material of the housing 3, e.g. an epoxy molding compound (short: EMC) can be provided to form the bottom portion 33 of the housing 3 and / or to form a housing body comprising the side wall 31 of the housing 3 . For example , the gaps between the parts 21 , 22 , 23 of the carrier 2 are filled with the housing material 3 . The housing 3 , e . g . the housing body comprising the side wall 31 and the bottom portion 33 of the housing can be formed by a casting or molding method, for example by trans fer molding . It is also possible that the elevation 62 can be formed by a casting or molding method like trans fer molding . For example , the housing body comprising the side wall 31 and the bottom portion 33 comprising the elevation 62 are formed in the same step, e . g . simultaneously . The housing body comprising the side wall 31 and the bottom portion 33 comprising the elevation 62 can be formed from or consist of the same material . However, it is also possible to form the elevation 62 of the boundary structure 6 after forming the housing body .

[0084] In case the boundary structure 6 comprises the trench 61 and the elevation 62 , the trench 61 can be arranged spaced apart from the elevation 62 . Due to the portion of the first part 21 of the carrier 2 , which can in this case be arranged between the trench 61 and the elevation 62 , a support for the formation of the elevation 62 is provided, e . g . for a mold .

[0085] After the carrier 2 , the housing 3 and the boundary structure 6 are provided, the first partial layer 51 of the reflective layer 5 is applied inside the cavity 32 of the housing 3 . The first partial layer 51 can be applied such that it comprises a prioritised spreading direction and / or position . For example , the first partial layer 51 can be applied such that it wets the elevation 62 . The first partial layer 51 can comprise a concave surface or a flat surface . In particular, the first partial layer 51 is applied in the trench 61 of the boundary structure 6 . The first partial layer 51 can additionally cover the portion of the first part 21 of the carrier 2 , which is arranged between the trench 61 and the elevation 62 .

[0086] Additionally or alternatively, the first partial layer 51 can cover the elevation 62 . In particular, the first partial layer 51 can cover the elevation 62 at least partially, for instance on a side of the elevation facing the mounting surface 21a of the first part 21 of the carrier 2 . It is further possible that the mounting surface 21a remains free of the first partial layer 51 . The first partial layer 51 can be applied to not cover the side wall 31 of the housing 3 . This can mean that the first partial layer 51 is only arranged to an inner portion of the cavity 32 . The inner portion of the cavity 32 can be an area of the cavity 32 close to and / or comprising the mounting surface 21a of the first part 21 of the carrier 2 .

[0087] For example , the first partial layer 51 is applied in liquid form . Thereby, an applied volume of the first partial layer 51 can be controlled to correspond to a predetermined and / or required volume . Afterwards , the first partial layer 51 can be cured to a solid form .

[0088] Figure 6 shows a subsequent step in the method for manufacturing an optoelectronic device 1 . The optoelectronic component 4 is arranged on the mounting surface 21a . In particular, the optoelectronic component 4 can be arranged on the mounting surface 21a after the formation of the first partial layer 51 . For example , the area of the mounting surface 21a corresponds or nearly corresponds to the area of the optoelectronic component 4 facing the mounting surface 21a, for example after being arranged on the mounting surface 21a . In other words , it is possible that the optoelectronic component 4 does not protrude the mounting surface 21a along the lateral direction x or along all lateral directions x and y . This can mean that in top view, the optoelectronic component 4 does not overlap with the first partial layer 51 of the reflective layer 5 .

[0089] In a next step, according to Figure 7 , the optoelectronic component 4 can be electrically connected using electrical connections 7 . For instance , shown here , the optoelectronic component 4 can be wire bonded to the second part 22 and / or the third part 23 of the carrier 2 . For example , the second part 22 and the third part 23 can be assigned to di f ferent electrical polarities . As shown here , the optoelectronic component 4 can be electrically connected via electrical connections 7 prior to applying the second partial layer 52 inside the cavity 32 .

[0090] Figure 8 shows a subsequent manufacturing step in the method for manufacturing an optoelectronic device 1 according to an exemplary embodiment . After arranging the optoelectronic component 4 in the cavity 32 , for instance on the mounting surface 21a and / or after electrically connecting the optoelectronic component 4 via electrical connections 7 , a second partial layer 52 of the reflective layer 5 can be formed . The second partial layer 52 can be formed to cover at least the side wall 31 of the housing 3 . The second partial layer 52 can also be applied on the second part 22 and on the third part 23 of the carrier 2 . During the method for manufacturing an optoelectronic device 1 , the boundary structure 6 can be configured to prevent material of the reflective layer 5 from creeping, flowing or being applied onto the optoelectronic component 4 , in particular onto the side face 4a of the optoelectronic component 4 . The second partial layer 52 , however, can partly cover the boundary structure 6 .

[0091] The second partial layer 52 can be applied in liquid form . For example , a bias for a spreading of the second partial layer can be applied to the dispensing process , for instance by means of a dispensing position . For example , the second partial layer 52 comprises a concave surface . For example , the first partial layer 51 is cured prior to applying the second partial layer 52 and / or prior to arranging the optoelectronic component 4 . After applying the second partial layer 52 , the second partial layer 52 can be cured to a solid form . In particular, the first partial layer 51 and the second partial layer 52 may not be cured simultaneously .

[0092] The invention described herein is not limited by the description given with reference to the embodiments . Rather, the invention encompasses any novel feature and any combination of features , including in particular any combination of features in the claims , even i f this feature or this combination is not itsel f explicitly indicated in the claims or embodiments .

[0093] This patent application claims priority from German patent application 10 2023 124 579 . 1 , the disclosure content of which is hereby incorporated by reference . References

[0094] 1 optoelectronic device

[0095] 2 carrier

[0096] 21 first part

[0097] 21a mounting surface

[0098] 22 second part

[0099] 23 third part

[0100] 3 housing

[0101] 31 side wall

[0102] 32 cavity

[0103] 33 bottom portion

[0104] 4 optoelectronic component

[0105] 4a side face

[0106] 5 reflective layer

[0107] 51 first partial layer

[0108] 52 second partial layer

[0109] 6 boundary structure

[0110] 61 trench

[0111] 62 elevation

[0112] 7 electrical connection z vertical direction x lateral direction, first lateral direction y lateral direction, second lateral direction

Claims

Claims1. An optoelectronic device (1) comprising:- a carrier ( 2 ) ,- a housing ( 3 ) ,- an optoelectronic component (4) , and- a reflective layer (5) , wherein- the carrier (2) comprises a first part (21) , a second part(22) and a third part (23) , the first part (21) being located between the second part (22) and the third part(23) and being laterally spaced apart from the second part (22) and the third part (23) ,- the housing (3) comprises a side wall (31) defining a cavity (32) and a bottom portion (33) in the cavity (32) , the bottom portion (33) mechanically connecting the first part (21) to the second part (22) and the third part (23) ,- the optoelectronic component (4) is arranged on a mounting surface (21a) of the first part (21) ,- a boundary structure (6) is located between the side wall (31) of the housing (3) and the optoelectronic component (4) , the boundary structure (6) being provided by the first part (21) of the carrier (2) and / or by the bottom portion (33) of the housing (3) , and- the reflective layer (5) covers the side wall (31) of the housing (3) and the boundary structure (6) , the boundary structure (6) being configured to prevent material of the reflective layer (5) from creeping onto the optoelectronic component ( 4 ) .

2. The optoelectronic device (1) according to the previous claim, whereinthe reflective layer (5) comprises a first partial layer(51) and a second partial layer (52) ,- the first partial layer (51) at least partly covers the first part (21) of the carrier (2) and the boundary structure ( 6 ) ,- the second partial layer (52) covers the side wall (31) of the housing (3) , the second part (22) and the third part (23) of the carrier (2) and the boundary structure (6) , and- in top view, an interface between the first partial layer (51) and the second partial layer (52) at least partially overlaps with the boundary structure (6) or both the first partial layer (51) and the second partial layer (52) overlap with the boundary structure (6) .

3. The optoelectronic device (1) according to one of the previous claims, wherein the boundary structure (6) comprises a trench (61) of the first part (21) of the carrier (2) , wherein the trench (61) surrounds the mounting surface (21a) of the first part (21) in lateral directions.

4. The optoelectronic device (1) according to one of the previous claims, wherein the boundary structure (6) comprises an elevation (62) of the bottom portion (33) of the housing (3) , wherein the elevation (62) protrudes beyond the mounting surface (21a) of the first part (21) of the carrier (2) in a vertical direction.

5. The optoelectronic device (1) according to one of the previous claims, wherein the boundary structure (6) completely surrounds the mounting surface (21a) of the first part (21) of the carrier (2) in lateral directions.

6. The optoelectronic device (1) according to one of the previous claims, wherein the boundary structure (6) comprises both a trench (61) of the first part (21) of the carrier (2) and an elevation (62) of the bottom portion (33) of the housing (3) .

7. The optoelectronic device (1) according to the previous claim, wherein the trench (61) of the boundary structure (6) is laterally spaced apart from the elevation (62) of the boundary structure (6) .

8. The optoelectronic device (1) according to one of the claims 6 to 7, wherein each of the trench (61) and the elevation (62) completely surrounds the mounting surface (21a) in lateral directions.

9. The optoelectronic device (1) according to one of the previous claims, wherein a side face (4a) of the optoelectronic component (4) is free of the reflective layer (5) .

10. The optoelectronic device (1) according to one of the previous claims, wherein the reflective layer (5) completely covers the boundary structure (6) .

11. The optoelectronic device (1) according to one of claims 3 and 6 to 8, wherein a width of the trench (61) is at least 100 pm and a depth of the trench (61) is at least 50 pm.

12. The optoelectronic device (1) according to one of the previous claims, wherein the boundary structure (6) is provided by the first part (21) of the carrier (2) or by bothof the first part (21) of the carrier (2) and the bottom portion (33) of the housing (3) .

13. A method for manufacturing an optoelectronic device (1) comprising a carrier (2) , a housing (3) , an optoelectronic component (4) , and a reflective layer (5) , the method comprising :- providing the carrier (2) and the housing (3) , wherein- the carrier (2) comprises a first part (21) , a second part (22) and a third part (23) , the first part (21) being located between the second part (22) and the third part (23) and being laterally spaced apart from the second part (22) and the third part (23) ,- the housing (3) comprises a side wall (31) defining a cavity (32) and a bottom portion (33) in the cavity (32) , the bottom portion (33) mechanically connecting the first part (21) to the second part (22) and the third part (23) , and- a boundary structure (6) is provided between the side wall (31) of the housing (3) and a mounting surface(21a) of the first part (21) , the boundary structure (6) being provided by the first part (21) of the carrier (2) and / or by the bottom portion (33) of the housing (3) ,- forming a first partial layer (51) of the reflective layer (5) , the first partial layer (51) at least partly covering the boundary structure (6) and not covering the side wall (31) of the housing (3) ,- arranging the optoelectronic component (4) on the mounting surface (21a) of the first part (21) after forming the first partial layer (51) of the reflective layer (5) , and- after arranging the optoelectronic component (4) , forming a second partial layer (52) of the reflective layer (5) tocover at least the side wall (31) of the housing (3) , wherein the boundary structure (6) is configured to prevent material of the reflective layer (5) from creeping onto the optoelectronic component (4) .

14. The method according to claim 13, wherein after applying the first partial layer (51) to at least partly cover the boundary structure (6) and the first part (21) of the carrier (2) , the second partial layer (52) is applied not only on the side wall (31) of the housing but also on the second part (22) and on the third part (23) of the carrier ( 2 ) .

15. The method according to the previous claim, wherein the first partial layer (51) and the second partial layer (52) are applied in liquid form, and the first partial layer (51) is cured prior to applying the second partial layer (52) .

16. The method according to one of the claims 13 to 15, wherein the optoelectronic component (4) is electrically connected via electrical connections (7) prior to applying the second partial layer (52) .

17. The method according to any of claims 13 to 16, wherein the optoelectronic device (1) of any of claims 1 to 12 is manufactured .

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