Semiconductor device

Abstract

The present invention provides a semiconductor device capable of improving characteristics. According to an embodiment, this semiconductor device includes first to third electrodes, first to fifth semiconductor members, and a first insulating member. The first semiconductor member is of a first conductivity type. A sixth partial region of the first semiconductor member comes into Schottky contact with the second electrode. The second semiconductor member is of a second conductivity type. The third semiconductor member is of the first conductivity type. The fourth semiconductor member is of the second conductivity type. The fifth semiconductor member is of the second conductivity type. A fifth impurity concentration of the second conductivity type in the fifth semiconductor member is lower than a fourth impurity concentration of the second conductivity type in the fourth semiconductor member.

Description

Semiconductor Devices

[0001] FIELD An embodiment of the present invention relates to a semiconductor device.

[0002] For example, in semiconductor devices including Schottky barrier diodes, improvements in characteristics are desired.

[0003] JP 2023-45865 A

[0004] The embodiments provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a third semiconductor member, a fourth semiconductor member, a fifth semiconductor member, and a first insulating member. The first semiconductor region is disposed between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor region includes a first partial region, a second partial region, a third partial region aligned with the second partial region in a second direction intersecting a first direction from the first electrode to the second electrode and disposed such that the first partial region is located between the second partial region and the first partial region in the second direction, a fourth partial region aligned with the second partial region in a direction intersecting the first direction, a fifth partial region aligned with the first partial region in the first direction, and a sixth partial region aligned with the fourth partial region in the first direction and making Schottky contact with the second electrode. The second semiconductor member is of a second conductivity type. The second semiconductor member includes a first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, a first semiconductor region aligned with the second partial region in the first direction, a second semiconductor region, a third semiconductor region aligned with the third partial region in the first direction, and a fourth semiconductor region. The third semiconductor member is electrically connected to the second electrode and is of the first conductivity type. The third semiconductor member includes a first semiconductor portion provided such that the second semiconductor region is located between it and the fifth partial region in the second direction, and a second semiconductor portion provided such that the fourth semiconductor region is located between it and the fifth partial region in the second direction. The fourth semiconductor member is electrically connected to the second electrode and is of the second conductivity type. The fourth semiconductor member is provided such that the first semiconductor region is located between it and the second partial region in the first direction. The fourth semiconductor member is provided such that the first semiconductor portion is located between it and the second semiconductor region in the second direction. The fifth semiconductor member is electrically connected to the second electrode and is of the second conductivity type. The fifth semiconductor member is provided such that the third semiconductor region is located between the fifth semiconductor member and the third partial region in the first direction. The fifth semiconductor member is provided such that the second semiconductor portion is located between the fifth semiconductor member and the fourth semiconductor region in the second direction.The fifth semiconductor member has a fifth impurity concentration of the second conductivity type that is lower than a fourth impurity concentration of the second conductivity type of the fourth semiconductor member. The third electrode is provided such that the fifth partial region is located between the third electrode and the first partial region in the first direction. The first insulating member includes a first insulating region provided between the fifth partial region and at least a part of the first conductive portion.

[0006] FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions will be omitted as appropriate.

[0008] 1 is a schematic cross-sectional view illustrating a semiconductor device according to a first embodiment. As shown in Fig. 1, a semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor member 11, a second semiconductor member 12, a third semiconductor member 13, a fourth semiconductor member 14, and a fifth semiconductor member 15. The first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, the fourth semiconductor member 14, and the fifth semiconductor member 15 are included in, for example, a semiconductor layer 10S.

[0009] The first semiconductor member 11 is provided between the first electrode 51 and the second electrode 52. The first semiconductor member 11 has a first conductivity type. The first semiconductor member 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, a fifth partial region 11e, and a sixth partial region 11f. A second direction D2 from the third partial region 11c to the second partial region 11b intersects with the first direction D1 from the first electrode 51 to the second electrode 52.

[0010] The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. In one example, the second direction D2 may be the X-axis direction.

[0011] The first partial region 11a is located between the third partial region 11c and the second partial region 11b in the second direction D2. The direction from the second partial region 11b to the fourth partial region 11d intersects with the first direction D1. In this example, the direction from the second partial region 11b to the fourth partial region 11d is along the second direction D2. In the embodiment, the direction from the second partial region 11b to the fourth partial region 11d may be any direction intersecting with the first direction D1 (for example, a direction having a component such as the Y-axis direction).

[0012] The direction from the first partial region 11a to the fifth partial region 11e is along the first direction D1. The direction from the fourth partial region 11d to the sixth partial region 11f is along the first direction D1. The sixth partial region 11f is in Schottky contact with the second electrode 52.

[0013] The second semiconductor member 12 has a second conductivity type. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0014] The second semiconductor member 12 includes a first semiconductor region 12 a, a second semiconductor region 12 b, a third semiconductor region 12 c, and a fourth semiconductor region 12 d. The direction from the second partial region 11 b to the first semiconductor region 12 a is along the first direction D1. The direction from the third partial region 11 c to the third semiconductor region 12 c is along the first direction D1.

[0015] The third semiconductor member 13 is of the first conductivity type. The third semiconductor member 13 includes a first semiconductor portion 13a and a second semiconductor portion 13b. The second semiconductor region 12b is located between the fifth partial region 11e and the first semiconductor portion 13a in the second direction D2. The fourth semiconductor region 12d is located between the second semiconductor portion 13b and the fifth partial region 11e in the second direction D2. The first semiconductor portion 13a and the second semiconductor portion 13b are electrically connected to the second electrode 52.

[0016] The fourth semiconductor member 14 is of the second conductivity type. The first semiconductor region 12a is provided between the second partial region 11b and the fourth semiconductor member 14 in the first direction D1. The first semiconductor portion 13a is provided between the second semiconductor region 12b and the fourth semiconductor member 14 in the second direction D2. The fourth semiconductor member 14 is electrically connected to the second electrode 52.

[0017] The fifth semiconductor member 15 is of the second conductivity type. The third semiconductor region 12c is provided between the third partial region 11c and the fifth semiconductor member 15 in the first direction D1. The second semiconductor portion 13b is provided between the fifth semiconductor member 15 and the fourth semiconductor region 12d in the second direction D2. The fifth semiconductor member 15 is electrically connected to the second electrode 52.

[0018] The fifth semiconductor member 15 has a fifth impurity concentration of the second conductivity type lower than the impurity concentration of the second conductivity type of the fourth semiconductor member 14. In one example, the fifth semiconductor member 15 is, for example, p ＋ In one example, the fourth semiconductor member 14 is, for example, a p ＋＋ It is a layer.

[0019] The third electrode 53 includes a first conductive portion 53a. The fifth partial region 11e is provided between the first partial region 11a and the first conductive portion 53a in the first direction D1.

[0020] The first insulating member 41 includes a first insulating region 41a. The first insulating region 41a is provided between the fifth partial region 11e and at least a part of the first conductive portion 53a.

[0021] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as a gate electrode. The semiconductor device 110 is, for example, a transistor (MOS transistor).

[0022] In the semiconductor device 110, the sixth partial region 11f is in Schottky contact with the second electrode 52. The portion including the sixth partial region 11f functions as a Schottky barrier diode (SBD).

[0023] For example, a reverse voltage may be applied to the semiconductor device 110. When a reverse voltage is applied, the potential of the second electrode 52 is higher than the potential of the first electrode 51. In this state, when holes are injected from the second electrode 52 into the transistor region, defects may occur in the semiconductor layer 10S, resulting in abnormal characteristics (e.g., breakdown). By providing the SBD in the semiconductor device 110, the hole injection start voltage can be controlled and the abnormal characteristics can be suppressed.

[0024] In such a configuration, for example, when the hole injection initiation current is high, the surge resistance tends to be low. In the embodiment, a fourth semiconductor member 14 and a fifth semiconductor member 15 having different impurity concentrations of the second conductivity type (p-type) are provided. This makes it possible to maintain a high surge resistance, for example, even when the hole injection initiation current is high. According to the embodiment, a semiconductor device with improved characteristics can be provided. For example, when the hole injection initiation current is low, a high surge resistance can be maintained.

[0025] In the embodiment, the first distance between the fourth semiconductor member 14 and the sixth partial region 11 f is preferably shorter than the second distance between the fifth semiconductor member 15 and the sixth partial region 11 f. The fourth semiconductor member 14 with a high impurity concentration is provided at a position close to the Schottky contact. The fifth semiconductor member 15 with a relatively low impurity concentration is provided at a position far from the Schottky contact. This makes it possible to more effectively maintain a high surge resistance.

[0026] For example, the fourth semiconductor member 14 with a high impurity concentration provided near the SBD functions as a hole injection promoting layer. No substantial operation occurs until hole injection begins. Meanwhile, hole injection begins from the fifth semiconductor member 15, which is far from the SBD. After that, a large amount of holes are injected from the fourth semiconductor member 14, which functions as a hole injection promoting layer. Conductivity modulation occurs, and the resistance decreases. The decrease in resistance after the start of hole injection causes, for example, IＦＳＭ (peak 1 cycle surge current) is improved.

[0027] During transistor operation, the fourth semiconductor member 14, the fifth semiconductor member 15, etc., form a current path from the first electrode 51 to the second electrode 52. By making the characteristics of the current path uniform, stable transistor operation is easily achieved. For this reason, it is not common to make the characteristics (e.g., impurity concentration) of the fourth semiconductor member 14 and the fifth semiconductor member 15 different.

[0028] The inventors of the present application have focused on a special situation that may arise when an SBD is provided. Taking this special situation into consideration, the fourth semiconductor member 14 and the fifth semiconductor member 15 are made to have different impurity concentrations. This makes it possible to achieve an improvement in characteristics that would not be expected in general.

[0029] In the embodiment, the semiconductor layer 10S (the first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, the fourth semiconductor member 14, and the fifth semiconductor member 15, etc.) contains SiC. When the semiconductor layer 10S contains SiC, stacking faults are expanded by hole injection. Stacking faults may cause, for example, changes in operating characteristics. By providing an SBD, the defects are suppressed. The effects of the fourth semiconductor member 14 and the fifth semiconductor member 15 described above can be effectively obtained.

[0030] In the embodiment, the fourth impurity concentration of the second conductivity type in the fourth semiconductor member 14 is higher than the second impurity concentration of the second conductivity type in the second semiconductor member 12. The fifth impurity concentration of the second conductivity type in the fifth semiconductor member 15 is higher than the second impurity concentration. The second semiconductor member 12 is, for example, a p-layer. As already explained, the fifth semiconductor member 15 is a p-layer. ＋ The fifth semiconductor member 15 may be a p ＋＋ The fifth semiconductor member 15 may be a p layer having a higher impurity concentration than the fourth semiconductor member 14. ＋ Layers are also acceptable.

[0031] In one example of the embodiment, the fourth impurity concentration of the second conductivity type in the fourth semiconductor member 14 may be 1.2 to 50 times the fifth impurity concentration in the fifth semiconductor member 15 .

[0032] In one example, the fourth impurity concentration may be 1.8 to 2500 times the second impurity concentration, and the fifth impurity concentration may be 1.5 to 50 times the second impurity concentration.

[0033] In one example, the second impurity concentration is 3×10 １６ cm －３ 3x10 or more １９ cm －３ In one example, the fourth impurity concentration is 1×10 １９ cm －３ 5x10 or more ２０ cm －３ In one example, the fifth impurity concentration is 1×10 １８ cm －３ 1x10 or more ２０ cm －３ The following is the result.

[0034] In the embodiment, the third semiconductor member 13 has a third impurity concentration of the first conductivity type higher than the first impurity concentration of the first conductivity type in the first semiconductor member 11. The first semiconductor member 11 is, for example, an n-layer. The third semiconductor member 13 is, for example, an n-layer. ＋ It is a layer.

[0035] In one example, the first impurity concentration is 1×10 １５ cm －３ 1x10 or more １７ cm －３ The third impurity concentration is 1×10 １８ cm －３ 5x10 or more ２０ cm －３ The following is fine.

[0036] As shown in FIG. 1, the second partial region 11b may be provided between the first partial region 11a and the fourth partial region 11d in the second direction D2.

[0037] 1, the second electrode 52 may include a first electrode portion 52a and a second electrode portion 52b. The second electrode portion 52b is provided between the sixth sub-region 11f and the first electrode portion 52a. The second electrode portion 52b includes at least one selected from the group consisting of Ni, Ti, V, and Mo. Such second electrode portion 52b makes it easier to obtain the desired Schottky contact.

[0038] As shown in FIG. 1, a portion of the first conductive portion 53a of the third electrode 53 may overlap with the second semiconductor region 12b and a portion of the first semiconductor portion 13a in the first direction D1.

[0039] 1, the first insulating member 41 may further include a second insulating region 41b. At least a portion of the second insulating region 41b is provided between the first conductive portion 53a of the third electrode 53 and the second electrode 52.

[0040] 1, the first semiconductor member 11 may further include a seventh partial region 11g and an eighth partial region 11h. The third partial region 11c is located between the seventh partial region 11g and the first partial region 11a in the second direction D2. The direction from the seventh partial region 11g to the eighth partial region 11h is along the first direction D1.

[0041] The second semiconductor member 12 may further include a fifth semiconductor region 12e. The third semiconductor member 13 may further include a third semiconductor portion 13c. The fifth semiconductor region 12e is provided between the eighth sub-region 11h and the fifth semiconductor member 15 in the second direction D2. The fifth semiconductor member 15 is provided between the third semiconductor portion 13c and the second semiconductor portion 13b in the second direction D2.

[0042] The third electrode 53 may further include a second conductive portion 53b. The eighth partial region 11h is provided between the seventh partial region 11g and the second conductive portion 53b in the first direction D1.

[0043] The first insulating member 41 may further include a third insulating region 41c. At least a portion of the third insulating region 41c is provided between the eighth sub-region 11h and at least a portion of the second conductive portion 53b. The second conductive portion 53b functions as a part of the gate electrode.

[0044] The semiconductor device 110 may have a plurality of portions functioning as gate electrodes. In one example, the first conductive portion 53a and the second conductive portion 53b may be striped along the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0045] In the embodiment, the multiple portions (such as the first conductive portion 53a and the second conductive portion 53b) that function as gate electrodes may be island-shaped.

[0046] The first insulating member 41 may further include a fourth insulating region 41d. At least a portion of the fourth insulating region 41d is provided between the second conductive portion 53b and the second electrode 52.

[0047] 1, the second semiconductor member 12 may further include a sixth semiconductor region 12f. The third semiconductor member 13 may further include a fourth semiconductor portion 13d. The fourth semiconductor portion 13d is provided between the fourth semiconductor member 14 and the sixth semiconductor region 12f in the second direction D2.

[0048] The sixth semiconductor region 12f may be provided, for example, between the fourth semiconductor portion 13d and the sixth portion region 11f.

[0049] In the embodiment, the first insulating member 41 may include silicon and a first element including at least one selected from the group consisting of oxygen and nitrogen. The first insulating member 41 may include silicon oxide. The first insulating member 41 may include silicon nitride.

[0050] 1, the semiconductor device 110 may further include a sixth semiconductor member 16 of the first conductivity type. The sixth semiconductor member 16 is provided between the first electrode 51 and the first semiconductor member 11. The sixth impurity concentration of the first conductivity type in the sixth semiconductor member 16 is higher than the first impurity concentration of the first conductivity type in the first semiconductor member 11. A good electrical connection is obtained between the first electrode 51 and the semiconductor layer 10S. A low on-resistance is easily obtained.

[0051] The semiconductor layer 10S (the first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, the fourth semiconductor member 14, and the fifth semiconductor member 15, etc.) may contain at least one selected from the group consisting of 4H—SiC, 6H—SiC, and 3C—SiC. These semiconductor members include crystals. These semiconductor members may include silicon. These semiconductor members may include a compound semiconductor containing Ga.

[0052] For example, the impurities of the first conductivity type include at least one selected from the group consisting of N, P, and As. For example, the impurities of the second conductivity type include at least one selected from the group consisting of B, Al, and Ga.

[0053] In an embodiment, information about the length and thickness can be obtained by electron microscopy, etc. Information about the composition of the material can be obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy Dispersive X-ray spectroscopy), etc.

[0054] The embodiments may include the following technical solutions: (Technical Solution 1) A first electrode, a second electrode, and a first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, a second direction from the third partial region to the second partial region intersects with a first direction from the first electrode to the second electrode, the first partial region is between the third partial region and the second partial region in the second direction, a direction from the second partial region to the fourth partial region intersects with the first direction, a direction from the first partial region to the fifth partial region is along the first direction, a direction from the fourth partial region to the sixth partial region is along the first direction, and the sixth partial region is in Schottky contact with the second electrode; a second semiconductor member of a second conductivity type, the second semiconductor member including a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region, the direction from the second partial region to the first semiconductor region being along the first direction, and the direction from the third partial region to the third semiconductor region being along the first direction; a third semiconductor member of the first conductivity type, the third semiconductor member including a first semiconductor portion and a second semiconductor portion, the second semiconductor region being between the fifth partial region and the first semiconductor portion in the second direction, the fourth semiconductor region being between the second semiconductor portion and the fifth partial region in the second direction, and the first semiconductor portion and the second semiconductor portion being electrically connected to the second electrode; a fourth semiconductor member of the second conductivity type, the first semiconductor region being provided between the second partial region and the fourth semiconductor member in the first direction, the first semiconductor portion being provided between the second semiconductor region and the fourth semiconductor member in the second direction, and the fourth semiconductor member being electrically connected to the second electrode;a fifth semiconductor member of the second conductivity type, wherein the third semiconductor region is provided between the third partial region and the fifth semiconductor member in the first direction, the second semiconductor portion is provided between the fifth semiconductor member and the fourth semiconductor region in the second direction, the fifth semiconductor member is electrically connected to the second electrode, and a fifth impurity concentration of the second conductivity type of the fifth semiconductor member is lower than a fourth impurity concentration of the second conductivity type of the fourth semiconductor member; a third electrode including a first conductive portion, wherein the fifth partial region is provided between the first partial region and the first conductive portion in the first direction; and a first insulating member including a first insulating region, wherein the first insulating region is provided between the fifth partial region and at least a part of the first conductive portion.

[0055] (Technical Solution 2) The semiconductor device according to Technical Solution 1, wherein the fourth impurity concentration is 1.2 times or more and 50 times or less than the fifth impurity concentration.

[0056] (Technical proposal 3) A semiconductor device described in Technical proposal 1 or 2, wherein the fourth impurity concentration is higher than the second impurity concentration of the second conductivity type of the second semiconductor member, and the fifth impurity concentration is higher than the second impurity concentration.

[0057] (Technical proposal 4) The semiconductor device according to Technical proposal 3, wherein the fourth impurity concentration is 1.8 times or more and 2500 times or less than the second impurity concentration, and the fifth impurity concentration is 1.5 times or more and 50 times or less than the second impurity concentration.

[0058] (Technical Solution 5) The second impurity concentration is 3×10 １６ cm －３ 3x10 or more １９ cm －３ the fourth impurity concentration is 1×10 or less １９ cm －３ 5x10 or more ２０ cm －３ the fifth impurity concentration is 1×10 or less １８ cm －３ 1x10 or more ２０ cm －３A semiconductor device according to Technical Solution 3 or 4, which is as follows:

[0059] (Technical Solution 6) The semiconductor device according to any one of Technical Solutions 1 to 5, wherein a first distance between the fourth semiconductor member and the sixth partial region is shorter than a second distance between the fifth semiconductor member and the sixth partial region.

[0060] (Technical Solution 7) The semiconductor device according to any one of Technical Solutions 1 to 6, wherein the second partial region is provided between the first partial region and the fourth partial region in the second direction.

[0061] (Technical proposal 8) A semiconductor device described in any one of Technical proposals 1 to 7, wherein the second electrode includes a first electrode portion and a second electrode portion, the second electrode portion is provided between the sixth partial region and the first electrode portion, and the second electrode portion includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0062] (Technical proposal 9) The semiconductor device according to any one of Technical proposals 1 to 8, wherein the third impurity concentration of the first conductivity type in the third semiconductor member is higher than the first impurity concentration of the first conductivity type in the first semiconductor member.

[0063] (Technical Solution 10) The first impurity concentration is 1×10 １５ cm －３ 1x10 or more １７ cm －３ the third impurity concentration is 1×10 or less １８ cm －３ 5x10 or more ２０ cm －３ A semiconductor device according to Technical Solution 9, which is as follows:

[0064] (Technical Solution 11) A semiconductor device described in any one of Technical Solutions 1 to 10, wherein the first insulating member further includes a second insulating region, and at least a portion of the second insulating region is provided between the first conductive portion and the second electrode.

[0065] (Technical proposal 12) The semiconductor device according to any one of Technical proposals 3 to 5, wherein the first semiconductor member further includes a seventh partial region and an eighth partial region; the third partial region is located between the seventh partial region and the first partial region in the second direction; the direction from the seventh partial region to the eighth partial region is along the first direction; the second semiconductor member further includes a fifth semiconductor region; the third semiconductor member further includes a third semiconductor portion; the fifth semiconductor region is provided between the eighth partial region and the fifth semiconductor member in the second direction; the third electrode further includes a second conductive portion; the eighth partial region is provided between the seventh partial region and the second conductive portion in the first direction; the first insulating member further includes a third insulating region; and at least a portion of the third insulating region is provided between the eighth partial region and at least a portion of the second conductive portion.

[0066] (Technical Solution 13) The semiconductor device according to Technical Solution 12, wherein the first conductive portion and the second conductive portion are aligned along a third direction, and the third direction intersects with a plane including the first direction and the second direction.

[0067] (Technical Solution 14) The semiconductor device described in Technical Solution 12 or 13, wherein the first insulating member further includes a fourth insulating region, and at least a portion of the fourth insulating region is provided between the second conductive portion and the second electrode.

[0068] (Technical proposal 15) The semiconductor device described in any one of Technical proposals 1 to 14, wherein the second semiconductor member further includes a sixth semiconductor region, the third semiconductor member further includes a fourth semiconductor portion, and the fourth semiconductor portion is provided between the fourth semiconductor member and the sixth semiconductor region in the second direction.

[0069] (Technical Solution 16) The semiconductor device according to Technical Solution 15, wherein the sixth semiconductor region is provided between the fourth semiconductor portion and the sixth portion region.

[0070] (Technical proposal 17) The semiconductor device according to any one of Technical proposals 1 to 16, wherein the first semiconductor member, the second semiconductor member, the third semiconductor member, and the fourth semiconductor member contain SiC.

[0071] (Technical Solution 18) The semiconductor device according to any one of Technical Solutions 1 to 17, wherein the first insulating member includes a first element including at least one selected from the group consisting of oxygen and nitrogen, and silicon.

[0072] (Technical proposal 19) A semiconductor device according to any one of Technical proposals 1 to 8, further comprising a sixth semiconductor member of the first conductivity type, wherein the sixth semiconductor member is provided between the first electrode and the first semiconductor member, and wherein a sixth impurity concentration of the first conductivity type in the sixth semiconductor member is higher than a first impurity concentration of the first conductivity type in the first semiconductor member.

[0073] (Technical Solution 20) The semiconductor device according to any one of Technical Solutions 1 to 19, wherein a portion of the first conductive portion overlaps with the second semiconductor region and a portion of the first semiconductor portion in the first direction.

[0074] According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0075] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the semiconductor device, such as the electrodes, semiconductor members, and insulating members, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0076] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0077] In addition, all semiconductor devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0078] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0079] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims.

[0080] 10S: Semiconductor layer, 11-16: First to sixth semiconductor members, 11a-11h: First to eighth partial regions, 12a-12f: First to sixth semiconductor regions, 13a-13d: First to fourth semiconductor portions, 41: First insulating member, 41a-41d: First to fourth insulating regions, 51-53: First to third electrodes, 52a, 52b: First and second electrode portions, 53a, 53b: First and second conductive portions, 110: Semiconductor device, D1-D3: First to third directions

Claims

1. A first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, including: a first electrode, a second electrode, a first partial region, a second partial region, a third partial region aligned with the second partial region in a second direction intersecting a first direction from the first electrode to the second electrode and provided such that the first partial region is located between the second partial region in the second direction, a fourth partial region aligned with the second partial region in a direction intersecting the first direction, a fifth partial region aligned with the first partial region in the first direction, and a sixth partial region aligned with the fourth partial region in the first direction and in Schottky contact with the second electrode; and a second semiconductor member of a second conductivity type, including: a first semiconductor region aligned with the second partial region in the first direction, a second semiconductor region, a third semiconductor region aligned with the third partial region in the first direction, and a fourth semiconductor region. a first semiconductor portion provided such that the second semiconductor region is located between it and the fifth partial region in the second direction; and a second semiconductor portion provided such that the fourth semiconductor region is located between it and the fifth partial region in the second direction, the third semiconductor member of the first conductivity type electrically connected to the second electrode; the first semiconductor region is provided such that it is located between it and the fifth partial region in the first direction, the first semiconductor portion is provided such that it is located between it and the fifth partial region in the second direction, the fourth semiconductor member of the second conductivity type electrically connected to the second electrode; the third semiconductor region is provided such that it is located between it and the fifth partial region in the first direction, the second semiconductor portion is provided such that it is located between it and the fourth semiconductor region in the second direction, the fifth semiconductor member of the second conductivity type electrically connected to the second electrode;a first insulating member including a first insulating region provided between the fifth portion region and at least a portion of the first conductive portion.

2. The semiconductor device according to claim 1, wherein the fourth impurity concentration is 1.2 times or more and 50 times or less than the fifth impurity concentration.

3. The semiconductor device according to claim 1, wherein the fourth impurity concentration is higher than a second impurity concentration of the second conductivity type of the second semiconductor member, and the fifth impurity concentration is higher than the second impurity concentration.

4. A semiconductor device according to any one of claims 1 to 3, wherein a first distance between the fourth semiconductor member and the sixth partial region is shorter than a second distance between the fifth semiconductor member and the sixth partial region.

5. The semiconductor device according to claim 1, wherein the second electrode includes a first electrode portion and a second electrode portion, the second electrode portion being provided between the sixth sub-region and the first electrode portion, and the second electrode portion including at least one selected from the group consisting of Ni, Ti, V, and Mo.

6. The semiconductor device according to claim 1, wherein a third impurity concentration of the first conductivity type in the third semiconductor member is higher than a first impurity concentration of the first conductivity type in the first semiconductor member.

7. The semiconductor device according to claim 3, wherein the first semiconductor member further includes a seventh partial region and an eighth partial region, the third partial region is between the seventh partial region and the first partial region in the second direction, the direction from the seventh partial region to the eighth partial region is along the first direction, the second semiconductor member further includes a fifth semiconductor region, the third semiconductor member further includes a third semiconductor portion, the fifth semiconductor region is provided between the eighth partial region and the fifth semiconductor member in the second direction, the third electrode further includes a second conductive portion, the eighth partial region is provided between the seventh partial region and the second conductive portion in the first direction, the first insulating member further includes a third insulating region, and at least a portion of the third insulating region is provided between the eighth partial region and at least a portion of the second conductive portion.

8. The semiconductor device according to claim 1, wherein the first semiconductor member, the second semiconductor member, the third semiconductor member and the fourth semiconductor member comprise SiC.

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