Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming same. The method comprises: providing a substrate (100, 200) and a grating material layer (201) located on the surface of the substrate (100, 200); providing a nanoimprint master mold; using the nanoimprint master mold as a mold to imprint the grating material layer (201) by means of a nanoimprint process, so as to form a grating structure on the surface of the substrate (100, 200), wherein the grating structure comprises a plurality of periodically distributed grating teeth (101, 202), the cross-sectional shape of each grating tooth (101, 202) in a direction perpendicular to the surface of the substrate (100, 200) is a triangle, the grating tooth (101, 202) comprises a blaze face (S1) and an anti-blaze face (S2), and the junction of the blaze face (S1) and the anti-blaze face (S2) forms the apex at the top of the triangle; and selectively forming a film layer on one or both of the blaze face (S1) and the anti-blaze face (S2) by setting the range of an included angle (β1) between the normal (L1) of the semiconductor structure comprising the substrate (100, 200) and the grating teeth (101, 202) and a horizontal line (L2), wherein the film layer formed on the blaze face (S1) is a first film layer (203, 503), and the film layer formed on the anti-blaze face (S2) is a second film layer (204, 404, 504). The method for forming the semiconductor structure has high flexibility, and the technological process is simplified.

Description

Semiconductor structure and method for forming the same

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on October 24, 2023, with application number 202311389714.1 and invention name “Semiconductor structure and method for forming the same”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor structure and a method for forming the same. Background Art

[0003] Blazed gratings, also known as directional gratings or small-step gratings, are characterized by an asymmetric sawtooth groove structure. Compared to other groove structures, the groove structure of a blazed grating exhibits diffraction characteristics that can focus most of the diffracted light onto a non-zero diffraction order, thereby adjusting the energy distribution of the diffracted light. With the rise of semiconductors in China, silicon micromachining technology has developed rapidly, grating fabrication processes have been continuously improved, and its fabrication technology has been significantly enhanced. This grating with an asymmetric sawtooth groove has gradually become the standard for commercial gratings.

[0004] Blazed gratings require extremely high precision, yet their stable performance and high resolution make them widely used in optical fields such as spectral analysis, laser interferometry, optical communications, and optical imaging. Blazed gratings are crucial optical devices, and their principles and applications span multiple fields. With the continuous advancement of technology, the application prospects of blazed gratings are expected to be extremely broad.

[0005] However, blazed gratings are difficult to manufacture and their performance needs to be improved.

[0006] Summary of the Invention

[0007] The technical problem solved by the present invention is to provide a semiconductor structure and a method for forming the same, so as to improve the performance of the blazed grating.

[0008] To solve the above technical problems, the technical solution of the present invention provides a method for forming a semiconductor structure, comprising: providing a substrate and a grating material layer located on the surface of the substrate; providing a nanoimprint master mold; using the nanoimprint master mold as a mold, and adopting a nanoimprint process to imprint the grating material layer to form a grating structure on the surface of the substrate, wherein the grating structure includes a plurality of periodically distributed grating teeth, and the cross-sectional figure of the grating teeth along the direction perpendicular to the substrate surface is a triangle, and the grating teeth include a blazing surface and an anti-blazing surface, and the connection between the blazing surface and the anti-blazing surface constitutes the sharp angle of the top of the triangle; by setting the angle range between the normal line of the semiconductor structure including the substrate and the grating teeth and the horizontal line, a film layer is selectively formed on one or both sides of the blazing surface and the anti-blazing surface, wherein the film layer formed on the surface of the blazing surface is the first film layer, and the film layer formed on the surface of the anti-blazing surface is the second film layer.

[0009] Optionally, a method for selectively forming a film layer on one or both sides of the blazing surface and the anti-blazing surface includes: providing a coating device, the coating device including: a vacuum chamber, the vacuum chamber including a first side wall and a second side wall relative to each other; a first ion source fixed to the lower part of the first side wall; a rotating target material holder fixed to the lower part of the second side wall, the rotating target material holder including at least two target material positions, and the target material holder is rotated to make each target material loaded on the target material position face the first ion source; a carrying device arranged on the upper part of the first side wall, the carrying device including a rotating shaft fixed to the upper part of the first side wall and a carrying platform connected to the rotating shaft, the rotating shaft can drive the carrying platform to revolve clockwise or counterclockwise in the vacuum chamber, and the carrying platform can rotate with the center of the carrying platform as the center of the circle; a second ion source fixed to the upper part of the second side wall.

[0010] Optionally, the method for selectively forming a film layer on one or both sides of the blazing surface and the anti-blazing surface also includes: placing a semiconductor structure including a substrate and grating teeth on a carrier platform; adjusting the rotating axis so that the rotating axis drives the carrier platform to revolve in the vacuum chamber, so that the angle between the normal of the semiconductor structure and the horizontal line is within a preset range, and the normal of the semiconductor structure is a vertical line perpendicular to the substrate surface; using a first ion source to generate a first ion beam to bombard a target material toward the first ion source, and forming a film layer on one or both sides of the blazing surface and the anti-blazing surface.

[0011] Optionally, a preset range of an angle between a normal line of the semiconductor structure and a horizontal line is less than 60°.

[0012] Optionally, a film layer is formed on one side of the blazing surface and the anti-blazing surface, including: adjusting the rotation axis so that the angle between the normal line of the semiconductor structure and the horizontal line is within a preset range, and the blazing surface faces the first target material or the anti-blazing surface faces the first target material; using a first ion source to generate a first ion beam to bombard the first target material facing the first ion source, and depositing a first film layer on the blazing surface facing the first target material, or depositing a second film layer on the anti-blazing surface facing the first target material.

[0013] Optionally, a film layer is formed on both sides of the blazing surface and the anti-blazing surface, and the materials of the first film layer and the second film layer are the same, including: after depositing the first film layer on the blazing surface facing the first target material, or depositing the second film layer on the anti-blazing surface facing the first target material, rotating the supporting platform at a preset angle so that the blazing surface or the anti-blazing surface where no film layer is formed faces the first target material, depositing the second film layer on the anti-blazing surface where no film layer is formed, or depositing the first film layer on the blazing surface where no film layer is formed.

[0014] Optionally, before rotating the supporting platform at a preset angle, the method further includes: arranging a shielding plate above the shining surface or the anti-shining surface where the film layer is formed.

[0015] Optionally, the preset angle range of the rotation of the supporting platform is: 150 degrees to 210 degrees.

[0016] Optionally, a film layer is formed on both sides of the blazing surface and the anti-blazing surface, and the materials of the first film layer and the second film layer are different, including: after depositing the first film layer on the blazing surface facing the first target material, or depositing the second film layer on the anti-blazing surface facing the first target material, a shielding plate is set above the blazing surface or the anti-blazing surface where the film layer is formed; rotating the target material holder so that the second target material faces the first ion source, and the material of the second target material is different from that of the first target material; rotating the carrier platform 180 degrees so that the blazing surface or the anti-blazing surface where the film layer is not formed faces the second target material; depositing the second film layer on the anti-blazing surface where the film layer is not formed, or depositing the first film layer on the blazing surface where the film layer is not formed.

[0017] Optionally, a preset range of an angle between a normal line of the semiconductor structure and a horizontal line is 0 degrees to 180 degrees.

[0018] Optionally, film layers are formed on both sides of the blazing surface and the anti-blazing surface, and the materials of the first film layer and the second film layer are the same, including: the angle between the normal line and the horizontal line of the semiconductor structure is within a preset range, the supporting platform is continuously rotated, and a first ion source is used to generate a first ion beam to bombard a first target material toward the first ion source, and the first film layer is simultaneously deposited on the blazing surface to form a first film layer, and the second film layer is deposited on the anti-blazing surface to form a second film layer.

[0019] Optionally, while using a first ion source to bombard a first target material toward the first ion source, it also includes: using a second ion source to generate a second ion beam to assist in forming the first film layer on the blazing surface, and using a second ion source to assist in forming the second film layer on the anti-blazing surface.

[0020] Optionally, the thicknesses of the first film layer and the second film layer are different, including: adjusting the angle between the normal line of the semiconductor structure and the horizontal line so that the deposition rates of the film layer on the blazing surface and the anti-blazing surface are different, thereby forming the first film layer and the second film layer with different thicknesses.

[0021] Optionally, the first ion beam generated by the first ion source includes: a bombardment type ion beam or a reaction type ion beam; the bombardment type ion beam includes an ion beam formed by any one or more inert gases of He, Ne, Ar, Kr and Xe; the reaction type ion beam includes an ion beam formed by a reaction gas and one or more inert gases of He, Ne, Ar, Kr and Xe, and the reaction gas includes a combination of one or more of oxygen, nitrous oxide and nitrogen.

[0022] Optionally, the blazing surface and the substrate surface form a first angle of the triangle, and the anti-blazing surface and the substrate surface form a second angle of the triangle, and the first angle is smaller than the second angle.

[0023] Optionally, the first film layer includes an anti-reflection film or an anti-reflection film, and the second film layer includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0024] Optionally, the material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

[0025] Optionally, the process temperature range for forming the film layer on one or both sides of the blazing surface and the anti-blazing surface is less than 80 degrees Celsius.

[0026] Correspondingly, the technical solution of the present invention also provides a semiconductor structure, comprising: a substrate; a grating structure located on the surface of the substrate, the grating structure comprising a plurality of grating teeth, the plurality of grating teeth being periodically distributed on the surface of the substrate, the cross-sectional figure of the grating teeth along the direction perpendicular to the surface of the substrate being a triangle, the grating teeth comprising a blazing surface and an anti-blazing surface, the connection between the blazing surface and the anti-blazing surface constituting the sharp angle at the top of the triangle; a single-sided or double-sided film layer located between the blazing surface and the anti-blazing surface, wherein the film layer located on the surface of the blazing surface is a first film layer, and the film layer located on the surface of the anti-blazing surface is a second film layer.

[0027] Optionally, the first film layer is located on the blazing surface, and the second film layer is located on the anti-blazing surface, and the first film layer and the second film layer are made of the same material.

[0028] Optionally, the first film layer and the second film layer have different thicknesses.

[0029] Optionally, the first film layer is located on the blazing surface, and the second film layer is located on the anti-blazing surface, and the materials of the first film layer and the second film layer are different.

[0030] Optionally, the blazing surface and the substrate surface form a first angle of the triangle, and the anti-blazing surface and the substrate surface form a second angle of the triangle, and the first angle is smaller than the second angle.

[0031] Optionally, the first film layer includes an anti-reflection film or an anti-reflection film, and the second film layer includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0032] Optionally, the material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

[0033] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0034] The technical solution of the present invention selectively forms a film on one or both of the blazing and anti-blazing surfaces by adjusting the angle range between the normal and the horizontal line of the semiconductor structure comprising the substrate and grating teeth. This allows for flexible control of film deposition on either or both the blazing and anti-blazing surfaces, as well as the ability to adjust the film thickness ratio between the two surfaces and deposit the same or different materials on the two surfaces. This improves the flexibility of film deposition on the blazing and anti-blazing surfaces and simplifies the process.

[0035] Furthermore, since the connection between the blazing surface and the anti-blazing surface constitutes the sharp angle of the top of the triangle, by setting the angle between the normal of the semiconductor structure and the horizontal line so that the angle between the normal of the semiconductor structure and the horizontal line is within a preset range, the tip of the grating tooth will block the sputtered particles from depositing on the other surface facing away from the first target material, thereby achieving single-sided coating on the blazing surface or the anti-blazing surface.

[0036] Furthermore, by rotating the supporting platform and setting the angle between the normal line of the semiconductor structure and the horizontal line, the shining surface and the anti-blazing surface can be coated sequentially or simultaneously, thereby improving the flexibility of forming the film layer on the shining surface and the anti-blazing surface and simplifying the process flow.

[0037] Furthermore, the process temperature range for forming the film layer on one or both sides of the blazing surface and the anti-blazing surface is less than 80 degrees Celsius. The process temperature is relatively low, and within this temperature range, the performance of the grating tooth material is relatively stable and is not easily modified or deformed, thereby affecting the performance of the grating structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] 1 and 2 are schematic structural diagrams of a semiconductor structure forming process according to an embodiment;

[0039] 3 to 9 are schematic structural diagrams of a semiconductor structure forming process according to an embodiment of the present invention;

[0040] 10 and 11 are schematic structural diagrams of a semiconductor structure forming process according to an embodiment of the present invention;

[0041] 12 and 13 are schematic structural diagrams of a semiconductor structure forming process according to another embodiment of the present invention. DETAILED DESCRIPTION

[0042] As mentioned in the background art, the production of blazed gratings is difficult, and the performance of blazed gratings needs to be improved. This will now be analyzed and explained in conjunction with specific embodiments.

[0043] 1 and 2 are schematic structural diagrams of a semiconductor structure forming process in one embodiment.

[0044] Please refer to Figure 1, a substrate 100 and a grating material layer (not shown) located on the surface of the substrate 100 are provided; a nanoimprint master mold (not shown) is provided; the nanoimprint master mold is used as a mold, and the grating material layer is imprinted by a nanoimprint process to form a grating structure on the surface of the substrate 100, wherein the grating structure includes a plurality of periodically distributed grating teeth 101, and the cross-sectional shape of the grating tooth 101 along a direction perpendicular to the surface of the substrate 100 is a triangle, and the grating tooth 101 includes a blazing surface S1 and an anti-blazing surface S2, and the connection between the blazing surface S1 and the anti-blazing surface S2 constitutes the sharp angle at the top of the triangle.

[0045] The grating material layer is made of a composite material, which is typically a mixture of an organic material and inorganic particles with a high refractive index. The inorganic particles with a high refractive index include titanium oxide or yttrium oxide particles. The material of the grating teeth 101 formed by the stamping is also a mixture of an organic material and inorganic particles with a high reflectivity. The material of the grating teeth 101 is not resistant to high temperatures. When the temperature is above 80 degrees Celsius, the material of the grating teeth 101 will deform, thereby changing the morphology of the grating teeth 101 (i.e., the triangular cross-sectional shape will deform or collapse). This will significantly change the optical performance of the grating structure and cannot meet the requirements.

[0046] Referring to FIG. 2 , a thin film 102 is formed on the blazing surface S1 and the anti-blazing surface S2 .

[0047] The film 102 is generally an anti-reflection film or an anti-reflection film, which is used to increase the reflectivity or transmittance of the grating teeth 101 and protect the surface of the grating teeth 101 .

[0048] On the one hand, the process for forming an anti-reflection film or an anti-reflection film is usually evaporation deposition, sputtering deposition, or chemical vapor deposition. The reaction temperature of these processes is usually greater than 80 degrees Celsius, which makes the morphology and performance of the grating teeth 101 vulnerable to failure. On the other hand, when a thin film is formed on the surface of the grating teeth 101 using conventional evaporation deposition, sputtering deposition, or chemical vapor deposition processes, the film layer is simultaneously formed on the blazing surface S1 and the anti-blazing surface S2. Conventional evaporation deposition, sputtering deposition, or chemical vapor deposition processes cannot form a film only on the blazing surface S1 or the anti-blazing surface S2 during the deposition process, and cannot form thin films of different materials on the blazing surface S1 and the anti-blazing surface S2. If it is necessary to form a film only on the blazing surface S1 or the anti-blazing surface S2, or to form thin films of different materials on the blazing surface S1 and the anti-blazing surface S2, a process step of first depositing and then removing the film is required, which increases the process flow.

[0049] To address the aforementioned issues, the present invention provides a method for forming a semiconductor and a semiconductor structure. By adjusting the angle range between the normal and the horizontal line of a semiconductor structure comprising a substrate and grating teeth, a film layer can be selectively formed on one or both of the blazing and anti-blazing surfaces. This allows for flexible control over whether to deposit a film layer on only the blazing or anti-blazing surface, or on both surfaces. Furthermore, the film thickness ratio between the blazing and anti-blazing surfaces can be adjusted, and the same or different materials can be deposited on the blazing and anti-blazing surfaces. This improves the flexibility of film formation on the blazing and anti-blazing surfaces and simplifies the process.

[0050] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0051] 3 to 9 are schematic structural diagrams of a semiconductor structure forming process according to an embodiment of the present invention.

[0052] Referring to FIG. 3 , a substrate 200 and a grating material layer 201 located on a surface of the substrate 200 are provided.

[0053] The substrate 200 is made of a semiconductor material or silicon oxide. The semiconductor material includes silicon, silicon carbide, silicon germanium, a multinary semiconductor material composed of Group III-V elements, silicon-on-insulator (SOI), or germanium-on-insulator (GOI). The multinary semiconductor material composed of Group III-V elements includes InP, GaAs, GaP, InAs, InSb, InGaAs, or InGaAsP.

[0054] In this embodiment, the substrate 200 is made of silicon.

[0055] In this embodiment, the grating material layer 201 comprises a mixture of an organic material and inorganic particles. The inorganic particles are inorganic materials with a high refractive index, including titanium oxide or yttrium oxide. The high refractive index of the inorganic particles results in a high reflectivity of the blazed surface formed by the mixture, which is then used to form grating teeth.

[0056] In this embodiment, the inorganic particles are made of titanium oxide, and the organic material is made of resin.

[0057] In other embodiments, the material of the grating material layer includes one or more combinations of silicon oxide, silicon, silicon carbide, and quartz.

[0058] Please refer to Figures 4 and 5. Figure 5 is an enlarged schematic diagram of a single grating tooth 202 in Figure 4. The grating material layer 201 is processed to form a grating structure on the surface of the substrate 200. The grating structure includes a plurality of periodically distributed grating teeth 202. The cross-sectional shape of the grating tooth 202 along a direction perpendicular to the surface of the substrate 200 is a triangle. The grating tooth 202 includes a blazing surface S1 and an anti-blazing surface S2. The connection between the blazing surface S1 and the anti-blazing surface S2 constitutes the sharp angle at the top of the triangle.

[0059] In this embodiment, the grating material layer 201 comprises a mixture of organic materials and inorganic particles. A method for processing the grating material layer 201 includes providing a nanoimprint master mold (not shown); using the nanoimprint master mold as a mold, performing a nanoimprint process on the grating material layer 201 to form a grating structure on the surface of the substrate 200. The grating structure includes a plurality of periodically distributed grating teeth 202.

[0060] In this embodiment, the blazing surface S1 and the surface of the substrate 200 form a first angle α1 of the triangle, and the anti-blazing surface S2 and the surface of the substrate 200 form a second angle α2 of the triangle. The first angle α1 is smaller than the second angle α2.

[0061] In this embodiment, the first angle α1 ranges from 30 degrees to 60 degrees; the second angle α2 ranges from 70 degrees to 90 degrees.

[0062] In other embodiments, the material of the grating material layer includes a combination of one or more of silicon oxide, silicon, silicon carbide and quartz; the process of processing the grating material layer to form grating teeth includes an ion etching process, a mechanical knife scratching process or a laser etching process, etc.

[0063] Next, a film layer is selectively formed on one or both sides of the blazing surface S1 and the anti-blazing surface S2 , wherein the film layer formed on the blazing surface S1 is the first film layer, and the film layer formed on the anti-blazing surface S2 is the second film layer.

[0064] Please refer to Figure 6, which provides a coating device, which includes: a vacuum chamber 300, wherein the vacuum chamber 300 includes a first side wall and a second side wall that are opposite to each other; a first ion source 301 fixed to the lower portion of the first side wall; a rotating target material holder 302 fixed to the lower portion of the second side wall, wherein the rotating target material holder 302 includes at least two target material positions, and the respective targets loaded on the target material positions are oriented toward the first ion source 301 by rotating the rotating target material holder 302; a carrying device arranged on the upper portion of the first side wall, wherein the carrying device includes a rotating shaft fixed to the upper portion of the first side wall and a carrying platform 305 connected to the rotating shaft, wherein the rotating shaft can drive the carrying platform 305 to revolve clockwise or counterclockwise in the vacuum chamber 300, and the carrying platform 305 can rotate with the center of the carrying platform 305 as the center of a circle; a second ion source 303 fixed to the upper portion of the second side wall; and a semiconductor structure including a substrate 200 and a grating tooth 202 is arranged on the carrying platform 305.

[0065] The vacuum chamber 300 provides a reaction environment with a certain vacuum degree for subsequently forming a film layer on one or both sides of the blazing surface S1 and the anti-blazing surface S2 .

[0066] The rotating shaft can drive the carrier 305 to revolve clockwise or counterclockwise in the vacuum chamber 300, that is, the carrier 305 can be flipped 360 degrees in the vacuum chamber 300 with the structure fixed on the upper part of the vacuum chamber 300 as the center and fulcrum. The position of the carrier 305 in the vacuum chamber 300 changes accordingly, and the semiconductor structure fixed on the carrier 305 changes the orientation of the upper surface accordingly, that is, the upper surface of the semiconductor structure fixed on the carrier 305 can be upward, downward or in any direction as it revolves, so as to achieve the purpose of subsequently adjusting the angle range between the normal line of the semiconductor structure and the horizontal line.

[0067] The carrier platform 305 can rotate with the center of the carrier platform 305 as the center of the circle, that is, the carrier platform 305 can rotate 360 ​​degrees with the structure at the center of the carrier platform 305 as the center of the circle and the fulcrum, without changing the position of the carrier platform 305 in the vacuum chamber 300. The upper surface of the semiconductor structure fixed on the carrier platform 305 changes its orientation within the plane of the carrier platform 305 accordingly, so as to achieve the purpose of adjusting the orientation of the blazing surface and the anti-blazing surface without changing the angle between the normal line of the semiconductor structure and the horizontal line.

[0068] The rotatable target holder 302 includes at least two target positions, which may be two, three, or four target positions. Each target position is loaded with a target. The target materials loaded in each target position can be the same or different, depending on the actual coating requirements. By rotating the rotatable target holder 302, the target material in one target position is directed toward the first ion source 301, so that the first ion source 301 generates a first ion beam b1 to bombard the target material directed toward the first ion source 301.

[0069] In this embodiment, a film layer is selectively formed on one side of the blazing surface S1 and the anti-blazing surface S2, wherein the film layer formed on the blazing surface S1 is the first film layer, and the film layer formed on the anti-blazing surface S2 is the second film layer.

[0070] Please refer to Figure 7, which is a schematic diagram based on Figure 6. The method for forming a film layer on a single surface of the blazing surface S1 and the anti-blazing surface S2 includes: adjusting the rotating axis so that the rotating axis drives the carrier 305 to revolve in the vacuum chamber 300, so that the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 is within a preset range, and the normal L1 of the semiconductor structure is a vertical line perpendicular to the surface of the substrate 200; using a first ion source 301 to generate a first ion beam b1 to bombard the first target material 304 toward the first ion source 301, and forming a film layer on a single surface of the blazing surface S1 and the anti-blazing surface S2.

[0071] In this embodiment, the preset range of the angle β1 between the normal line of the semiconductor structure and the horizontal line is less than 60°.

[0072] It should be noted that during the process of forming the film layer on one side of the blazing surface S1 and the anti-blazing surface S2 , the second ion source 303 is not turned on.

[0073] A first ion source 301 is used to generate a first ion beam b1 to bombard a first target 304 toward the first ion source 301. After being bombarded by the first ion beam b1, the first target 304 sputters out sputtered particles Sputtered ions to the blazing surface S1 or the anti-blazing surface S2 facing the first target 304. Since the connection between the blazing surface S1 and the anti-blazing surface S2 constitutes the sharp angle of the top of the triangle, by setting the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2, so that the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 is within a preset range, the tip of the grating tooth 202 will block the sputtered particles Sputtered ions from being deposited on the other surface facing away from the first target 304, thereby achieving single-sided coating on the blazing surface S1 or the anti-blazing surface S2.

[0074] In this embodiment, the process of forming the film layer on one side of the blazing surface S1 or the anti-blazing surface S2 includes a sputtering deposition process.

[0075] Please refer to Figure 8 in conjunction with Figure 7, and form a first film layer 203 on the surface of the blazing surface S1, including: adjusting the rotation axis so that the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 is within a preset range, so that the blazing surface S1 faces the first target material 304, and the anti-blazing surface S2 faces away from the first target material 304; using the first ion source 301 to generate a first ion beam b1 to bombard the first target material 304 facing the first ion source 301, and depositing the first film layer 203 on the blazing surface S1 of the first target material 304 facing the first ion source 301.

[0076] Please refer to Figure 9 in conjunction with Figure 7, and form a second film layer 204 on the surface of the anti-blaze surface S2, including: adjusting the rotation axis so that the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 is within a preset range, so that the anti-blaze surface S2 faces the first target material 304, and the blaze surface S1 faces away from the first target material 304; using the first ion source 301 to generate a first ion beam b1 to bombard the first target material 304 facing the first ion source 301, and depositing the second film layer 204 on the anti-blaze surface S2 of the first target material 304 facing the first ion source 301.

[0077] When the semiconductor structure including the substrate 200 and the grating teeth 202 is placed on the carrier 305, the semiconductor structure including the substrate 200 and the grating teeth 202 is oriented so that the rotation axis drives the carrier 305 to revolve within the vacuum chamber 300. When the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is within a preset range, the blazing surface S1 or the anti-blazing surface S2 to be coated faces the first target 304. Alternatively, after the rotation axis drives the carrier 305 to revolve within the vacuum chamber 300, the carrier 305 is rotated so that the blazing surface S1 or the anti-blazing surface S2 to be coated faces the first target 304.

[0078] In this embodiment, the first ion beam b1 generated by the first ion source 301 includes a bombardment ion beam, which includes an ion beam formed by one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The bombardment ion beam is used to bombard the first target 304, causing particles of the first target 304 to be sputtered.

[0079] In this embodiment, the first film layer 203 comprises an anti-reflection film, and the second film layer 204 comprises an anti-reflection film. The anti-reflection film is made of aluminum, silver, gold, or copper. The anti-reflection film is used to increase the reflectivity of the surface of the grating teeth 202. The process of forming the first film layer 203 and the second film layer 204 includes a sputtering deposition process.

[0080] In this embodiment, the process temperature range for forming the first film layer 203 and the second film layer 204 is less than 80 degrees Celsius. The process temperature is relatively low, and within this temperature range, the performance of the grating tooth material is relatively stable and is not easily modified or deformed, thereby affecting the performance of the grating structure.

[0081] In other embodiments, the first film layer includes an antireflection film, and the second film layer includes an antireflection film; the material of the antireflection film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide. The first ion beam generated by the first ion source includes a reactive ion beam, wherein the reactive ion beam includes an ion beam formed by a reactive gas and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe, wherein the reactive gas includes a combination of one or more selected from the group consisting of oxygen, nitrous oxide, and nitrogen. The process for forming the first and second film layers includes a reactive sputtering deposition process, wherein the reactive gas reacts with target material particles sputtered after bombardment and is subsequently deposited on the blazed surface or the anti-blazed surface.

[0082] In this embodiment, the thickness of the first film layer 203 ranges from 0 to 300 nanometers; the thickness of the second film layer 204 ranges from 0 to 300 nanometers.

[0083] In this embodiment, the material of the first target 304 includes aluminum, copper, silver, titanium, tantalum or gold.

[0084] The following are several specific coating processes in this embodiment.

[0085] For example, when a gold-enhanced reflection film with a thickness of 0 to 300 nanometers is deposited on the blazing surface S1, the specific steps are as follows: adjusting the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, and the supporting platform 305 does not rotate, so that the blazing surface S1 faces the first target material 304, and the material of the first target material 304 is gold; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the gold target, and the gold target sputters gold particles that are deposited on the surface of the blazing surface S1 to form the gold-enhanced reflection film.

[0086] For example, when a reflection-enhancing film made of aluminum with a thickness of 0 to 300 nanometers is deposited on the anti-blaze surface S2, the specific steps are as follows: adjusting the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, and the supporting platform 305 does not rotate, so that the anti-blaze surface S2 faces the first target material 304, and the material of the first target material 304 is aluminum; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the aluminum target, and the aluminum target sputters aluminum particles that are deposited on the surface of the anti-blaze surface S2 to form a reflection-enhancing film made of aluminum.

[0087] Accordingly, an embodiment of the present invention further provides a semiconductor structure, as shown in FIG8 and FIG9 , including:

[0088] substrate 200;

[0089] A grating structure located on the surface of a substrate 200, the grating structure comprising a plurality of grating teeth 202, the plurality of grating teeth being periodically distributed on the surface of the substrate 200, the cross-section of each grating tooth 202 being triangular along a direction perpendicular to the surface of the substrate 200, the grating tooth 202 comprising a blazing surface S1 and an anti-blazing surface S2, the junction of the blazing surface S1 and the anti-blazing surface S2 forming the sharp corner at the top of the triangle;

[0090] The first film layer 203 is located on the surface of the blazing surface S1, or the second film layer 204 is located on the surface of the anti-blazing surface S2.

[0091] In this embodiment, the blazing surface S1 and the surface of the substrate 200 form a first angle α1 of the triangle, and the anti-blazing surface S2 and the surface of the substrate 200 form a second angle α2 of the triangle. The first angle α1 is smaller than the second angle α2.

[0092] In this embodiment, the first film layer 203 includes an anti-reflection film or an anti-reflection film, and the second film layer 204 includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0093] In this embodiment, the material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

[0094] 10 and 11 are schematic structural diagrams of a semiconductor structure forming process according to an embodiment of the present invention.

[0095] Please refer to FIG. 10 , which is a schematic diagram based on FIG. 7 , and FIG. 11 is a schematic diagram based on FIG. 8 , in which film layers are formed on both sides of the blazing surface S1 and the anti-blazing surface S2 .

[0096] In this embodiment, the first film layer 203 is first formed on the blazing surface S1 , and then the second film layer 404 is formed on the anti-blazing surface S2 during the same coating process.

[0097] The method for forming a film layer on both sides of the blazing surface S1 and the anti-blazing surface S2 includes: after forming a first film layer 203 on the surface of the blazing surface S1, rotating the supporting platform 305 at a preset angle β2 so that the anti-blazing surface S2 where the film layer is not formed faces the first target material 304, and depositing a second film layer 404 on the anti-blazing surface S2 where the film layer is not formed.

[0098] In this embodiment, the range of the preset angle β2 of rotating the supporting platform 305 at the preset angle β2 is 150 degrees to 210 degrees. Rotating the supporting platform 305 includes rotating around the center of the supporting platform 305.

[0099] In this embodiment, before rotating the supporting platform 305 at the preset angle β2 , the process further includes: disposing a shielding plate (not shown) above the blazing surface S1 where the first film layer 203 is formed.

[0100] In this embodiment, an angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is less than 60°.

[0101] In this embodiment, the second film layer 404 and the first film layer 203 are made of the same material. Since the first film layer 203 and the second film layer 404 are formed sequentially during the same coating process, the first ion source 301 remains on to maintain the stability of the environment within the vacuum chamber 300. During the rotation of the carrier 305, if it is not necessary to continue forming a film on the surface of the first film layer 203 formed on the blazing surface S1, a shielding plate (not shown) can be placed above the blazing surface S1 where the first film layer 203 is formed to block the film. This prevents film deposition on the blazing surface S1 during the rotation of the carrier 305. Otherwise, there is no need to place a shielding plate above the blazing surface S1.

[0102] Since the first film layer 203 and the second film layer 404 are formed successively in the same coating process, the thicknesses of the first film layer 203 and the second film layer 404 can be adjusted according to the coating time.

[0103] In this embodiment, the process temperature range for forming the first film layer 203 and the second film layer 404 is less than 80 degrees Celsius. The process temperature is relatively low, and within this temperature range, the performance of the grating tooth material is relatively stable and is not easily modified or deformed, thereby affecting the performance of the grating structure.

[0104] In another embodiment, the second film layer and the first film layer are made of the same material. During the same coating process, the second film layer is first formed on the anti-blaze surface. The carrier is then rotated at a predetermined angle so that the unblazed surface faces the first target material, and the first film layer is deposited on the unblazed surface.

[0105] In another embodiment, the materials of the first and second film layers are different. The method for forming film layers on both the blazing surface and the anti-blazing surface includes: after depositing the first film layer on the blazing surface facing the first target, or depositing the second film layer on the anti-blazing surface facing the first target, placing a shielding plate above the blazing surface or the anti-blazing surface where the film layer is formed; rotating the target holder so that a second target is facing the first ion source, the material of the second target being different from that of the first target; rotating the carrier 180 degrees so that the blazing surface or the anti-blazing surface where no film layer is formed faces the second target; and depositing the second film layer on the anti-blazing surface where no film layer is formed, or depositing the first film layer on the blazing surface where no film layer is formed.

[0106] A shielding plate is placed above the blazing or anti-blazing surface where a film layer is formed to prevent the second target material from being deposited onto the surface of the already formed first or second film layer during the rotation of the carrier platform. Rotating the carrier platform 180 degrees ensures that the blazing or anti-blazing surface where a film layer is not formed faces the second target material, allowing a film layer to be formed on the blazing or anti-blazing surface where a film layer is not formed.

[0107] The material of the second target includes aluminum, copper, silver, titanium, tantalum or gold.

[0108] The first ion beam generated by the first ion source includes: a bombardment type ion beam or a reaction type ion beam; the bombardment type ion beam includes an ion beam formed by any one or more inert gases of He, Ne, Ar, Kr and Xe; the reaction type ion beam includes an ion beam formed by a reaction gas and one or more inert gases of He, Ne, Ar, Kr and Xe, and the reaction gas includes a combination of one or more of oxygen, nitrous oxide and nitrogen, and the reaction gas reacts with the target material particles sputtered after the bombardment and is deposited on the blazing surface or the anti-blazing surface.

[0109] The first film layer includes an anti-reflection film or an anti-reflection film, and the second film layer includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0110] Accordingly, an embodiment of the present invention further provides a semiconductor structure, as shown in FIG11 , including:

[0111] substrate 200;

[0112] A grating structure located on the surface of a substrate 200, the grating structure comprising a plurality of grating teeth 202, the plurality of grating teeth being periodically distributed on the surface of the substrate 200, the cross-section of each grating tooth 202 being triangular along a direction perpendicular to the surface of the substrate 200, the grating tooth 202 comprising a blazing surface S1 and an anti-blazing surface S2, the junction of the blazing surface S1 and the anti-blazing surface S2 forming the sharp corner at the top of the triangle;

[0113] A first film layer 203 located on the surface of the blazing surface S1;

[0114] The second film layer 404 is located on the anti-glare surface S2.

[0115] In this embodiment, the blazing surface S1 and the surface of the substrate 200 form a first angle α1 of the triangle, and the anti-blazing surface S2 and the surface of the substrate 200 form a second angle α2 of the triangle. The first angle α1 is smaller than the second angle α2.

[0116] In this embodiment, the materials of the first film layer 203 and the second film layer 404 are the same. In another embodiment, the materials of the first film layer and the second film layer are different.

[0117] In this embodiment, the first film layer 203 includes an anti-reflection film or an anti-reflection film, and the second film layer 404 includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0118] In this embodiment, the material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

[0119] 12 and 13 are schematic structural diagrams of a semiconductor structure forming process according to another embodiment of the present invention.

[0120] Please refer to FIG. 12 , which is a schematic diagram based on FIG. 7 , and FIG. 13 is a schematic diagram based on FIG. 4 , in which film layers are formed on both sides of the blazing surface S1 and the anti-blazing surface S2 .

[0121] The method for forming a film layer on both sides of the blazing surface S1 and the anti-blazing surface S2 includes: the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is within a preset range, the carrier platform 305 is continuously rotated, and a first ion source 301 is used to generate a first ion beam b1 to bombard the first target material 304 toward the first ion source 301, and the first film layer 503 is deposited on the blazing surface S1, and the second film layer 504 is deposited on the anti-blazing surface S2.

[0122] In this embodiment, the first film layer 503 and the second film layer 504 are made of the same material, and the first film layer 503 and the second film layer 504 are formed simultaneously.

[0123] In this embodiment, the preset range of the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is 0 degrees to 180 degrees. The preset range of the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is 0 degrees to 180 degrees. That is, the rotation axis is not adjusted, or the rotation axis is adjusted so that the rotation axis drives the supporting platform 305 to revolve within the vacuum chamber 300, so that the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is within any angle range. Since the supporting platform 305 continuously rotates, the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is within any angle range, and a film layer can be deposited on both the blazing surface S1 and the anti-blazing surface S2.

[0124] In this embodiment, the first ion beam b1 generated by the first ion source 301 includes a bombardment ion beam, which includes an ion beam formed by one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe. The bombardment ion beam is used to bombard the first target 304, causing particles of the first target 304 to be sputtered.

[0125] In this embodiment, the first film layer 503 comprises an anti-reflection film, and the second film layer 504 comprises an anti-reflection film. The anti-reflection film is made of aluminum, silver, gold, or copper. The anti-reflection film is used to increase the reflectivity of the surface of the grating teeth 202. The process of forming the first film layer 503 and the second film layer 504 includes a sputtering deposition process.

[0126] In this embodiment, the process temperature range for forming the first film layer 503 and the second film layer 504 is less than 80 degrees Celsius. The process temperature is relatively low, and within this temperature range, the performance of the grating tooth material is relatively stable and is not easily modified or deformed, thereby affecting the performance of the grating structure.

[0127] In other embodiments, the first film layer includes an antireflection film, and the second film layer includes an antireflection film; the material of the antireflection film includes titanium oxide, titanium nitride, tantalum oxide, or aluminum oxide. The first ion beam generated by the first ion source includes a reactive ion beam, wherein the reactive ion beam includes an ion beam formed by a reactive gas and one or more inert gases selected from the group consisting of He, Ne, Ar, Kr, and Xe, wherein the reactive gas includes a combination of one or more selected from the group consisting of oxygen, nitrous oxide, and nitrogen. The process for forming the first and second film layers includes a reactive sputtering deposition process, wherein the reactive gas reacts with target material particles sputtered after bombardment and is subsequently deposited on the blazed surface or the anti-blazed surface.

[0128] In this embodiment, the thickness of the first film layer 503 ranges from 0 to 300 nanometers; the thickness of the second film layer 504 ranges from 0 to 300 nanometers.

[0129] In this embodiment, the material of the first target 304 includes aluminum, copper, silver, titanium, tantalum or gold.

[0130] Please continue to refer to Figure 12. In this embodiment, while using the first ion source 301 to generate a first ion beam b1 to bombard the first target material 304 toward the first ion source 301, it also includes: using the second ion source 303 to generate a second ion beam b2 to assist the first film layer 503 in forming on the blazing surface S1, and using the second ion source 303 to assist the second film layer 504 in forming on the anti-blazing surface S2.

[0131] The second ion beam b2 generated by the second ion source 303 includes: a bombardment type ion beam or a reaction type ion beam; the bombardment type ion beam includes an ion beam formed by any one or more inert gases among He, Ne, Ar, Kr and Xe; the reaction type ion beam includes an ion beam formed by a reaction gas and one or more inert gases among He, Ne, Ar, Kr and Xe, and the reaction gas includes a combination of one or more of oxygen, nitrous oxide and nitrogen, and the reaction gas reacts with the target material particles sputtered after bombardment and is deposited on the blazing surface or the anti-blazing surface.

[0132] The second ion beam b2 can make the structures of the formed first film layer 503 and the second film layer 504 denser and the deposition rate faster.

[0133] In other embodiments, the second ion beam can be generated without using the second ion source.

[0134] In another embodiment, the first and second film layers have different thicknesses. By adjusting the angle between the normal line of the semiconductor structure and the horizontal line, the deposition rate of the film layer on the blazing surface and the anti-blazing surface is made different, thereby forming the first and second film layers of different thicknesses.

[0135] Specifically, by adjusting the angle between the normal and the horizontal line of the semiconductor structure, the tip of the grating teeth is used to block the sputtered particles, so that the amount of sputtered particles of the target material reaching the blazing surface and the anti-blazing surface is different, so that the deposition rate of the film layer on the blazing surface and the anti-blazing surface is different, thereby forming a first film layer and a second film layer with different thicknesses.

[0136] Accordingly, an embodiment of the present invention further provides a semiconductor structure, as shown in FIG13 , including:

[0137] substrate 200;

[0138] A grating structure located on the surface of a substrate 200, the grating structure comprising a plurality of grating teeth 202, the plurality of grating teeth being periodically distributed on the surface of the substrate 200, the cross-section of each grating tooth 202 being triangular along a direction perpendicular to the surface of the substrate 200, the grating tooth 202 comprising a blazing surface S1 and an anti-blazing surface S2, the junction of the blazing surface S1 and the anti-blazing surface S2 forming the sharp corner at the top of the triangle;

[0139] A first film layer 503 located on the surface of the blazing surface S1;

[0140] The second film layer 504 is located on the anti-glare surface S2.

[0141] In this embodiment, the blazing surface S1 and the surface of the substrate 200 form a first angle α1 of the triangle, and the anti-blazing surface S2 and the surface of the substrate 200 form a second angle α2 of the triangle. The first angle α1 is smaller than the second angle α2.

[0142] In this embodiment, the first film layer 503 and the second film layer 504 are made of the same material.

[0143] In this embodiment, the first film layer 503 and the second film layer 504 have different thicknesses.

[0144] In this embodiment, the first film layer 503 includes an anti-reflection film or an anti-reflection film, and the second film layer 504 includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

[0145] In this embodiment, the material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

[0146] The following is a specific coating process combining several embodiments.

[0147] For example, an antireflection film made of titanium oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the blazing surface S1, and a coating layer made of aluminum with a thickness of 0 to 300 nanometers is deposited on the surface of the antireflection film and the surface of the anti-blazing surface S2. The specific steps are as follows: adjusting the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, and the supporting platform 305 does not rotate, so that the blazing surface S1 faces the first target 304, and the material of the first target 304 is titanium; introducing oxygen and argon, or introducing oxygen to generate the first The ion beam b1 bombards the titanium target, and titanium particles sputtered out from the titanium target react with oxygen and are deposited on the surface of the blazing surface S1 to form an anti-reflection film made of titanium oxide. After the anti-reflection film is formed, the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is adjusted to an arbitrary angle, and the supporting platform 305 rotates to switch the first target material to a second target material made of aluminum. Argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the aluminum target, and the aluminum target sputters out aluminum particles, which are synchronously deposited on the surface of the anti-reflection film on the blazing surface S1 and the surface of the anti-blazing surface S2 to form a coating layer made of aluminum.

[0148] For example, an antireflection film made of tantalum oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the antireflection film S2, and then a coating layer made of gold with a thickness of 0 to 300 nanometers is deposited on the surface of the antireflection film and the surface of the blazing surface S1. The specific steps are: adjusting the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, the supporting platform 305 does not rotate, and the anti-blazing surface S2 is directed toward the first target material 304, and the material of the first target material 304 is tantalum; oxygen and argon gas are introduced into the first ion source 301, or oxygen is introduced to generate a first ion beam b1 to bombard the tantalum target, and tantalum particles sputtered from the tantalum target react with oxygen and are deposited on the surface of the anti-blazing surface S2 to form an antireflection film made of tantalum oxide; after the antireflection film is formed, the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is adjusted to 0. The support platform 305 is adjusted to any angle, and the support platform 305 is rotated to switch the first target material to a second target material made of gold; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the gold target, and the gold target sputters gold particles, which are synchronously deposited on the surface of the anti-reflection film on the anti-blazing surface S2 and the surface of the blazing surface S1 to form a coating layer made of gold.

[0149] For example, an anti-reflection film made of titanium oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the blazing surface S1, and an anti-reflection film made of silver with a thickness of 0 to 300 nanometers is deposited on the surface of the anti-blazing surface S2. The specific steps are as follows: adjusting the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, the supporting platform 305 does not rotate, and the blazing surface S1 is directed toward the first target 304, which is made of titanium; introducing oxygen and argon, or introducing oxygen to generate the first ion source 301; The beam b1 bombards the titanium target, and titanium particles sputtered out from the titanium target react with oxygen and are deposited on the surface of the blazing surface S1 to form an anti-reflection film made of titanium oxide; after the anti-reflection film is formed, the first target material is switched to a second target material made of silver, and the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is kept unchanged, and the supporting platform 305 is rotated 180 degrees so that the anti-blazing surface S2 faces the second target material; argon gas is introduced into the first ion source 301 to generate the first ion beam b1 to bombard the silver target, and the silver target sputters silver particles that are deposited on the surface of the anti-blazing surface S2 to form an anti-reflection film made of silver.

[0150] For example, a reflection-enhancing film made of aluminum with a thickness of 0 to 300 nanometers is deposited on the surface of the blazing surface S1, and a reflection-enhancing film made of tantalum oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the anti-blazing surface S2, and then a coating layer made of gold with a thickness of 0 to 300 nanometers is deposited on the surface of the reflection-enhancing film. The specific steps are: adjusting the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, the supporting platform 305 does not rotate, so that the blazing surface S1 faces the first target material 304, and the material of the first target material 304 is aluminum; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the aluminum target, and the aluminum target sputters aluminum particles to form a reflection-enhancing film made of aluminum on the surface of the blazing surface S1; after the reflection-enhancing film of aluminum is formed on the surface of the blazing surface S1, the first target material is switched to a material A second target material is tantalum, and the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is kept unchanged. The supporting platform 305 is rotated 180 degrees so that the anti-blaze surface S2 faces the second target material; oxygen and argon are introduced into the first ion source 301, or oxygen is introduced to generate a first ion beam b1 to bombard the tantalum target, and tantalum particles sputtered out from the tantalum target react with oxygen and are deposited on the surface of the anti-blaze surface S2 to form an anti-reflection film made of tantalum oxide; after the anti-reflection film of tantalum oxide is formed, the second target material is switched to a third target material made of gold, and the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is kept unchanged, the supporting platform 305 does not rotate, and argon is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the gold target, and the gold target sputters gold particles that are deposited on the surface of the anti-reflection film on the anti-blaze surface S2 to form a coating layer made of gold.

[0151] For example, an antireflection film made of tantalum oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the blazing surface S1, and an antireflection film made of titanium oxide with a thickness of 0 to 300 nanometers is deposited on the surface of the antireflection film of the anti-blazing surface S2, and then a coating layer made of aluminum with a thickness of 0 to 300 nanometers is deposited on the surface of the antireflection film of the blazing surface S1 and the anti-blazing surface S2. The specific steps are: adjusting the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 to less than 60 degrees, the supporting platform 305 does not rotate, so that the blazing surface S1 faces the first target material 304, and the material of the first target material 304 is tantalum; oxygen and argon gas are introduced into the first ion source 301, or oxygen is introduced to generate a first ion beam b1 to bombard the tantalum target, and titanium particles sputtered from the tantalum target react with oxygen and are deposited on the surface of the blazing surface S1 to form an antireflection film made of tantalum oxide; after the antireflection film is formed on the blazing surface S1, the first target material is switched to A second target material is made of titanium, and the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is kept unchanged. The supporting platform 305 is rotated 180 degrees so that the anti-blaze surface S2 faces the second target material; oxygen and argon are introduced into the first ion source 301, or oxygen is introduced to generate a first ion beam b1 to bombard the titanium target, and titanium particles sputtered out from the titanium target react with oxygen and are deposited on the surface of the anti-blaze surface S2 to form an anti-reflection film made of titanium oxide; after the anti-reflection film is formed on the blaze surface S1 and the anti-blaze surface S2, the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is adjusted to an arbitrary angle, and the supporting platform 305 is rotated to switch the second target material to a third target material made of aluminum; argon is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the aluminum target, and the aluminum target sputters out aluminum particles, which are synchronously deposited on the anti-reflection film surfaces of the blaze surface S1 and the anti-blaze surface S2 to form a coating layer made of aluminum.

[0152] For example, a silver-based anti-reflection film with a thickness of 0 to 300 nanometers is deposited on the blazing surface S1, and an aluminum-based anti-reflection film with a thickness of 0 to 300 nanometers is deposited on the anti-blazing surface S2. Specifically, the angle β1 between the normal line L1 of the semiconductor structure and the horizontal line L2 is adjusted to be less than 60 degrees, and the supporting platform 305 does not rotate, so that the blazing surface S1 faces the first target 304, and the first target 304 is made of silver; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the first ion source 301. Silver target, the silver target sputters silver particles and deposits them on the surface of the blazing surface S1 to form a silver anti-reflection film; after the anti-reflection film is formed on the surface of the blazing surface S1, the first target is switched to a second target made of aluminum, and the angle β1 between the normal L1 of the semiconductor structure and the horizontal line L2 is kept unchanged, and the supporting platform 305 is rotated 180 degrees so that the anti-blazing surface S2 faces the second target; argon gas is introduced into the first ion source 301 to generate a first ion beam b1 to bombard the aluminum target, and the aluminum target sputters aluminum particles and deposits them on the surface of the anti-blazing surface S2 to form an aluminum anti-reflection film.

[0153] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for forming a semiconductor structure, characterized in that: include: Providing a substrate and a grating material layer located on a surface of the substrate; Providing nanoimprint master mold; The nanoimprint master mold is used as a mold, and the grating material layer is imprinted by a nanoimprint process to form a grating structure on the surface of the substrate, wherein the grating structure includes a plurality of grating teeth that are periodically distributed, and the cross-sectional figure of the grating tooth along a direction perpendicular to the substrate surface is a triangle, and the grating tooth includes a blazing surface and an anti-blazing surface, and the connection between the blazing surface and the anti-blazing surface constitutes the sharp angle at the top of the triangle; By setting the angle range between the normal line and the horizontal line of the semiconductor structure including the substrate and the grating teeth, a film layer is selectively formed on one or both sides of the blazing surface and the anti-blazing surface, wherein the film layer formed on the surface of the blazing surface is the first film layer, and the film layer formed on the surface of the anti-blazing surface is the second film layer.

2. The method for forming a semiconductor structure according to claim 1, wherein: A method for selectively forming a film layer on one or both sides of the shining surface and the anti-shining surface, comprising: providing a coating device, the coating device comprising: a vacuum chamber, the vacuum chamber comprising a first side wall and a second side wall opposite to each other; a first ion source fixed to the lower portion of the first side wall; a rotating target material rack fixed to the lower portion of the second side wall, the rotating target material rack comprising at least two target material positions, and the target material rack is rotated so that each target material loaded on the target material position is oriented toward the first ion source; a carrying device arranged on the upper portion of the first side wall, the carrying device comprising a rotating shaft fixed to the upper portion of the first side wall and a carrying platform connected to the rotating shaft, the rotating shaft can drive the carrying platform to revolve clockwise or counterclockwise in the vacuum chamber, and the carrying platform can rotate with the center of the carrying platform as the center of a circle; a second ion source fixed to the upper portion of the second side wall.

3. The method for forming a semiconductor structure according to claim 2, wherein: The method for selectively forming a film layer on one or both sides of the shining surface and the anti-shining surface also includes: placing a semiconductor structure including a substrate and grating teeth on a carrier; adjusting the rotating axis so that the rotating axis drives the carrier to revolve in the vacuum chamber, so that the angle between the normal line of the semiconductor structure and the horizontal line is within a preset range, and the normal line of the semiconductor structure is a vertical line perpendicular to the substrate surface; using a first ion source to generate a first ion beam to bombard a target material toward the first ion source, and forming a film layer on one or both sides of the shining surface and the anti-shining surface.

4. The method for forming a semiconductor structure according to claim 3, wherein: The preset range of the angle between the normal line of the semiconductor structure and the horizontal line is less than 60°.

5. The method for forming a semiconductor structure according to claim 4, wherein: A film layer is formed on one side of the shining surface and the anti-shining surface, comprising: adjusting the rotation axis so that the angle between the normal line of the semiconductor structure and the horizontal line is within a preset range, and the shining surface faces the first target material or the anti-shining surface faces the first target material; using a first ion source to generate a first ion beam to bombard the first target material facing the first ion source, and depositing a first film layer on the shining surface facing the first target material, or depositing a second film layer on the anti-shining surface facing the first target material.

6. The method for forming a semiconductor structure according to claim 5, wherein: A film layer is formed on both sides of the shining surface and the anti-shining surface, and the materials of the first film layer and the second film layer are the same, including: after depositing the first film layer on the shining surface facing the first target material, or depositing the second film layer on the anti-shining surface facing the first target material, rotating the supporting platform at a preset angle so that the shining surface or the anti-shining surface where no film layer is formed faces the first target material, depositing the second film layer on the anti-shining surface where no film layer is formed, or depositing the first film layer on the shining surface where no film layer is formed.

7. The method for forming a semiconductor structure according to claim 6, wherein: Before rotating the supporting platform at a preset angle, the method further includes: arranging a shielding plate above the shining surface or the anti-shining surface where the film layer is formed.

8. The method for forming a semiconductor structure according to claim 6, wherein: The preset angle range of the rotation of the supporting platform is: 150 degrees to 210 degrees.

9. The method for forming a semiconductor structure according to claim 5, wherein: A film layer is formed on both sides of the shining surface and the anti-shining surface, and the materials of the first film layer and the second film layer are different, including: after depositing the first film layer on the shining surface facing the first target material, or depositing the second film layer on the anti-shining surface facing the first target material, a shielding plate is set above the shining surface or the anti-shining surface where the film layer is formed; the target material holder is rotated so that the second target material faces the first ion source, and the material of the second target material is different from that of the first target material; the supporting platform is rotated 180 degrees so that the shining surface or the anti-shining surface where the film layer is not formed faces the second target material; the second film layer is deposited on the anti-shining surface where the film layer is not formed, or the first film layer is deposited on the shining surface where the film layer is not formed.

10. The method for forming a semiconductor structure according to claim 3, wherein: The preset range of the included angle between the normal line of the semiconductor structure and the horizontal line is 0 degree to 180 degrees.

11. The method for forming a semiconductor structure according to claim 10, wherein: A film layer is formed on both sides of the shining surface and the anti-shining surface, and the materials of the first film layer and the second film layer are the same, including: the angle between the normal line and the horizontal line of the semiconductor structure is within a preset range, the supporting platform is continuously rotated, a first ion source is used to generate a first ion beam to bombard a first target material toward the first ion source, and a first film layer is deposited on the shining surface and a second film layer is deposited on the anti-shining surface simultaneously.

12. The method for forming a semiconductor structure according to claim 11, wherein: While using the first ion source to bombard the first target material facing the first ion source, it also includes: using the second ion source to generate a second ion beam to assist the first film layer to form on the blazing surface, and using the second ion source to assist the second film layer to form on the anti-blazing surface.

13. The method for forming a semiconductor structure according to claim 11, wherein: The thicknesses of the first film layer and the second film layer are different, including: adjusting the angle between the normal line and the horizontal line of the semiconductor structure so that the deposition rates of the film layer on the blazing surface and the anti-blazing surface are different, thereby forming the first film layer and the second film layer with different thicknesses.

14. The method for forming a semiconductor structure according to claim 2, wherein: The first ion beam generated by the first ion source includes: a bombardment type ion beam or a reaction type ion beam; the bombardment type ion beam includes an ion beam formed by any one or more inert gases of He, Ne, Ar, Kr and Xe; the reaction type ion beam includes an ion beam formed by a reaction gas and one or more inert gases of He, Ne, Ar, Kr and Xe, and the reaction gas includes a combination of one or more of oxygen, nitrous oxide and nitrogen.

15. The method for forming a semiconductor structure according to claim 1, wherein: The blazing surface and the substrate surface form a first angle of the triangle, and the anti-blazing surface and the substrate surface form a second angle of the triangle. The first angle is smaller than the second angle.

16. The method for forming a semiconductor structure according to claim 1, wherein: The first film layer includes an anti-reflection film or an anti-reflection film, and the second film layer includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

17. The method for forming a semiconductor structure according to claim 1, wherein: The material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

18. The method for forming a semiconductor structure according to claim 1, wherein: The process temperature range for forming the film layer on one or both sides of the blazing surface and the anti-blazing surface is less than 80 degrees Celsius.

19. A semiconductor structure, characterized in that: include: substrate; A grating structure located on the surface of a substrate, the grating structure comprising a plurality of grating teeth, the plurality of grating teeth being periodically distributed on the surface of the substrate, the cross-sectional shape of the grating teeth along a direction perpendicular to the surface of the substrate being a triangle, the grating teeth comprising a blazing surface and an anti-blazing surface, the connection between the blazing surface and the anti-blazing surface forming a sharp angle at the top of the triangle; The film layer located on one or both sides of the blazing surface and the anti-blazing surface, wherein the film layer located on the blazing surface is the first film layer, and the film layer located on the anti-blazing surface is the second film layer. Membrane layer.

20. The semiconductor structure according to claim 19, wherein: The first film layer is located on the surface of the blazing surface, and the second film layer is located on the surface of the anti-blazing surface. The first film layer and the second film layer are made of the same material.

21. The semiconductor structure according to claim 20, wherein: The thicknesses of the first film layer and the second film layer are different.

22. The semiconductor structure according to claim 19, wherein: The first film layer is located on the surface of the blazing surface, and the second film layer is located on the surface of the anti-blazing surface. The materials of the first film layer and the second film layer are different.

23. The semiconductor structure according to claim 19, wherein: The blazing surface and the substrate surface form a first angle of the triangle, and the anti-blazing surface and the substrate surface form a second angle of the triangle. The first angle is smaller than the second angle.

24. The semiconductor structure according to claim 19, wherein: The first film layer includes an anti-reflection film or an anti-reflection film, and the second film layer includes an anti-reflection film or an anti-reflection film; the material of the anti-reflection film includes titanium oxide, titanium nitride, tantalum oxide or aluminum oxide; the material of the anti-reflection film includes aluminum, silver, gold or copper.

25. The semiconductor structure according to claim 19, wherein: The material of the grating structure includes a mixed material of an organic material and inorganic particles, and the inorganic particles include titanium oxide.

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