Apparatus for manufacturing silicon carbide ingot and method for manufacturing silicon carbide ingot using same

Abstract

The present invention provides an apparatus for manufacturing a silicon carbide ingot and a method for manufacturing silicon carbide ingot using same, the apparatus comprising: a crucible main body for accommodating a silicon carbide raw material; a crucible cover disposed on an upper portion of the crucible main body; and a first insulating material surrounding the crucible main body, wherein the first insulating material comprises a 1-1 insulating material and a 1-2 insulating material having different densities, the density of the 1-2 insulating material is greater than the density of the 1-1 insulating material, and the 1-2 insulating material is disposed on top of the 1-1 insulating material.

Description

Silicon carbide ingot manufacturing device and method for manufacturing silicon carbide ingot using the same The present invention relates to a silicon carbide ingot manufacturing device and a method for manufacturing a silicon carbide ingot using the same. Silicon carbide (SiC) boasts excellent heat resistance, mechanical strength, and radiation resistance, allowing for production on large-diameter substrates. Furthermore, SiC boasts superior physical strength and chemical resistance, a large energy band gap, and high electron saturation drift velocity and voltage resistance. Therefore, it is widely used in semiconductor devices requiring high power, efficiency, voltage, and capacity, as well as in abrasives, bearings, and refractory plates. Silicon carbide is manufactured through various methods, including heat treatment or electrical current application of carbon raw materials such as silicon carbide waste. Conventional methods include the Acheson process, reaction sintering, pressureless sintering, and chemical vapor deposition (CVD). However, these methods suffer from the problem of residual carbon raw materials, which can act as impurities and degrade the thermal, electrical, and mechanical properties of silicon carbide. For example, Japanese Patent Application Laid-Open No. 2002-326876 discloses a method for manufacturing a silicon carbide precursor by reacting it at high temperature under an inert gas such as argon (Ar) after a heat treatment process to polymerize or cross-link a silicon source and a carbon source. However, this process has the problem of high manufacturing cost and uneven powder size because it requires high-temperature heat treatment at 1,800°C to 2,100°C under vacuum or inert gas conditions. Moreover, wafers used in the solar cell and semiconductor industries are manufactured by growing silicon ingots in crucibles made of materials such as graphite. This manufacturing process generates not only waste slurry containing silicon carbide, but also a significant amount of silicon carbide waste adsorbed to the inner walls of the crucible. However, this waste has traditionally been landfilled, leading to environmental problems and significant disposal costs. The present invention provides a silicon carbide ingot manufacturing device capable of increasing the length of a silicon carbide ingot, reducing the occurrence of defects such as seed loss, and improving crystal quality, and a method for manufacturing a silicon carbide ingot using the same. A silicon carbide ingot manufacturing device according to the present invention comprises a crucible body for accommodating silicon carbide raw material, a crucible cover disposed on an upper portion of the crucible body, and a first insulating material surrounding the crucible body, wherein the first insulating material comprises a first-first insulating material and a first-second insulating material having different densities, the density of the first-second insulating material being greater than the density of the first-first insulating material, and the first-second insulating material being disposed on an upper portion of the first-first insulating material. In one embodiment of the present invention, the density ratio of the first-1 insulating material: the density ratio of the first-2 insulating material may be greater than 1:1.15 and less than 1:1.6. In one embodiment of the present invention, the density of the first-1 insulating material is 0.11 g / cm 2 0.13 g / cm 2 It could be. In one embodiment of the present invention, the density of the first-second insulating material is 0.15 g / cm 2 0.17 g / cm 2 It could be. In one embodiment of the present invention, in the height direction of the crucible body, the length of the first-second insulating material may be 50% to 200% of the length of the first-first insulating material. In one embodiment of the present invention, the length of the first insulation material may be 160 mm to 290 mm. In one embodiment of the present invention, in the height direction of the crucible body, the length of the first-second insulating material may be 70% to 140% of the sum of the length of the crucible body and the length of the crucible cover. In one embodiment of the present invention, the crucible may include a second insulating material disposed at the lower portion of the crucible body and a third insulating material disposed at the upper portion of the crucible cover. In one embodiment of the present invention, a gap of more than 0 mm to 10 mm can be formed between the first insulating material and the crucible body. A method for manufacturing a silicon carbide ingot according to the present invention comprises the steps of preparing a crucible body containing a silicon carbide raw material, covering an inlet of the crucible body using a crucible cover, arranging a first insulating material surrounding the crucible body and including a first insulating material and a first insulating material having different densities, sublimating silicon carbide from the silicon carbide raw material by heating, and growing a silicon carbide ingot by the sublimated silicon carbide, wherein the density of the first insulating material is greater than that of the first insulating material, the first insulating material is arranged on top of the first insulating material, and the temperature of the silicon carbide ingot is controlled by the first insulating material. In one embodiment of the present invention, the temperature gradient in the vertical direction of the silicon carbide ingot can be increased by the first insulating material. The silicon carbide ingot manufacturing device according to the present invention surrounds a crucible body and includes two types of insulating materials with different densities, with the insulating material having a relatively high density being placed at the top. Due to this, the thermal conductivity is relatively reduced in the region where the silicon carbide ingot grows, and the temperature gradient in the vertical direction is increased, so that the growth rate of the silicon carbide ingot is appropriately improved, and the length of the silicon carbide ingot can be increased. In addition, the phenomenon of rapid heat conduction to the seed crystal in the early stage of growth of the silicon carbide ingot can be suppressed, so that the occurrence of defects such as seed crystal loss can be minimized. In addition, the silicon carbide ingot manufacturing device according to the present invention can control the shape of the silicon carbide ingot by controlling the insulation properties by adjusting the density range, density ratio, length, etc. of the two types of insulating materials, thereby maintaining a uniform internal temperature gradient. As a result, the occurrence of defects in the silicon carbide ingot and the wafer manufactured therefrom can be reduced, and the crystal quality can be improved. Figures 1 and 2 schematically illustrate a cross-section of a silicon carbide ingot manufacturing device in which a first insulating material is arranged according to one embodiment of the present invention. FIG. 3 schematically illustrates a cross-section of a manufacturing device for growing a silicon carbide ingot according to one embodiment of the present invention. Figure 4 schematically illustrates a cross-section of a silicon carbide ingot manufacturing device of Comparative Example 1. Figure 5 shows a photograph of a silicon carbide ingot according to Example 1. Figure 6 shows a photograph of a silicon carbide ingot according to Comparative Example 1. Figure 7 shows a photograph of a silicon carbide ingot according to Comparative Example 2. Figure 8 is a photograph of a silicon carbide wafer sample according to Example 1 taken using an optical microscope. Figure 9 is a photograph of a silicon carbide wafer sample according to Comparative Example 1 taken using an optical microscope. The structural or functional descriptions of the embodiments disclosed in this specification or application are merely illustrative for the purpose of explaining embodiments according to the technical idea of ​​the present invention, and the embodiments according to the technical idea of ​​the present invention can be implemented in various forms other than the embodiments disclosed in this specification or application, and the technical idea of ​​the present invention is not construed as being limited to the embodiments described in this specification or application. When a component is referred to as "including" in this specification or application, unless otherwise specifically stated, this does not exclude other components, but rather implies the inclusion of additional components. Furthermore, all numerical ranges indicating physical properties, dimensions, etc. of the components described in this specification or application should be understood to be modified by the term "about" in all cases unless otherwise specified. Furthermore, "ppm" in this specification or application refers to weight basis. The description of "A and / or B" in this specification or application means "A, B, or A and B." In addition, when it is said that a certain component is "connected" to another component, this includes not only the case where it is "directly connected" but also the case where it is "connected with another component in between." In addition, the meaning of B being located on A means that B is located in direct contact with A or that B is located on A with another layer located therebetween, and is not limited to being interpreted as being located in contact with the surface of A. In addition, the singular expression is interpreted to include the singular or plural as interpreted in the context unless specifically stated otherwise. In addition, each embodiment may be combined with each other, as long as they are not technically incompatible with each other. A silicon carbide ingot manufacturing device according to the present invention comprises a crucible body for accommodating silicon carbide raw material, a crucible cover disposed on an upper portion of the crucible body, and a first insulating material surrounding the crucible body, wherein the first insulating material comprises a first-first insulating material and a first-second insulating material having different densities, the density of the first-second insulating material being greater than the density of the first-first insulating material, and the first-second insulating material being disposed on an upper portion of the first-first insulating material. FIG. 1 and FIG. 2 schematically illustrate a cross-section of a silicon carbide ingot manufacturing device in which a first insulating material is arranged according to one embodiment of the present invention. Referring to FIGS. 1 and 2, a silicon carbide ingot manufacturing device includes a crucible body (20) that accommodates silicon carbide raw material (10) and a crucible cover (30) placed on top of the crucible body (20). The above silicon carbide raw material (10) may include silicon carbide. The above silicon carbide raw material (10) may include α-phase silicon carbide and / or β-phase silicon carbide. The above silicon carbide raw material (10) may include a silicon carbide single crystal and / or a silicon carbide polycrystal. The above silicon carbide raw material (10) may further contain unwanted impurities in addition to silicon carbide. The above silicon carbide raw material (10) may further contain a carbon-based material such as graphite as an impurity. The carbon-based material may be derived from a graphite crucible, etc. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 1 wt% to about 60 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 2 wt% to about 60 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 5 wt% to about 60 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 5 wt% to about 50 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 50 wt% or less. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 45 wt% or less. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 40 wt% or less. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 1 wt% to about 50 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 5 wt% to about 45 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 10 wt% to about 40 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 10 wt% to about 35 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 10 wt% to about 30 wt%. The carbon-based material may be included in the silicon carbide raw material (10) in an amount of about 10 wt% to about 20 wt%. The silicon carbide raw material (10) may further include free silicon as an impurity. The free silicon may be derived from a silicon substrate and / or a silicon component. The silicon component may be a component used in semiconductor equipment, such as a focus ring. The free silicon may be included in the silicon carbide raw material in an amount of about 0.01 wt% to about 10 wt%. The above silicon carbide raw material (10) may further contain metal impurities. The metal impurities may be selected from the group consisting of lithium, boron, sodium, aluminum, phosphorus, potassium, calcium, titanium, vanadium, chromium, manganese, iron, nickel, copper, zinc, strontium, zirconium, molybdenum, tin, barium, tungsten, or lead. The content of the metal impurity may be about 0.1 ppm to 13 ppm based on the total weight of the silicon carbide raw material (10). The content of the metal impurity may be about 0.3 ppm to 12 ppm. The content of the metal impurity may be about 0.5 ppm to 8 ppm. The content of the metal impurity may be about 0.8 ppm to 10 ppm. The content of the metal impurity may be about 1 ppm to 6 ppm. The content of the metal impurity may be about 0.1 ppm to 5 ppm. The content of the metal impurity may be about 0.5 ppm to 3 ppm. The content of the metal impurity may be about 0.5 ppm to 2 ppm. The above silicon carbide raw material (10) may further contain non-metallic impurities. The non-metallic impurities may be selected from the group consisting of fluorine, nitrogen, chlorine, or phosphorus. The content of the non-metallic impurities may be about 0.01 ppm to 30 ppm based on the total weight of the silicon carbide raw material (10). The content of the non-metallic impurities may be about 0.3 ppm to 20 ppm. The content of the non-metallic impurities may be about 0.5 ppm to 15 ppm. The content of the non-metallic impurities may be about 1 ppm to 15 ppm. The content of the non-metallic impurities may be about 3 ppm to 13 ppm. The content of the non-metallic impurities may be about 1 ppm to 10 ppm. The content of the non-metallic impurities may be about 5 ppm to 15 ppm. The content of the non-metallic impurities may be about 5 ppm to 12 ppm. The above silicon carbide raw material (10) may contain about 30 wt% or more of particles having a particle size of about 1 mm or more. The above silicon carbide raw material (10) may contain about 50 wt% or more of particles having a particle size of about 1 mm or more. The above silicon carbide raw material (10) may contain about 70 wt% or more of particles having a particle size of about 1 mm or more. The silicon carbide raw material (10) may contain about 30 wt% or more of particles having a particle size of about 10 mm or more. The silicon carbide raw material (10) may contain about 50 wt% or more of particles having a particle size of about 10 mm or more. The silicon carbide raw material (10) may contain about 70 wt% or more of particles having a particle size of about 10 mm or more. Here, a sphere having the same volume as the volume of the particle is assumed, and the diameter of the sphere is defined as the particle diameter. The above silicon carbide raw material (10) may be derived from a substrate comprising silicon carbide. The above silicon carbide raw material (10) may be derived from a wafer comprising silicon carbide as a whole. The above silicon carbide raw material (10) may be derived from a silicon carbide layer deposited on a substrate such as silicon. The above silicon carbide raw material (10) may be derived from a silicon carbide single crystal ingot. The silicon carbide single crystal ingot may be generated during the manufacturing process and discarded due to defects. The above silicon carbide raw material (10) may be derived from a silicon carbide polycrystal. The above silicon carbide raw material (10) may be derived from a silicon carbide sintered body. The silicon carbide sintered body may be formed by sintering silicon carbide powder. The silicon carbide sintered body may be a component included in semiconductor manufacturing equipment. The above silicon carbide raw material (10) may be derived from a graphite component including a silicon carbide layer. The graphite component may include a crucible or the like for forming a silicon carbide ingot. The above silicon carbide raw material (10) may be derived from a component of a semiconductor device including a silicon carbide layer. The silicon carbide layer may be formed by depositing silicon carbide on the surface of a silicon component or the like through a chemical vapor deposition (CVD) process. The above silicon carbide raw material (10) may have a lump shape. The above silicon carbide raw material (10) may have a plate shape. The above silicon carbide raw material (10) may have a block shape. One or more silicon carbide blocks may be included in the crucible body (10). The apparent volume of the silicon carbide block may be about 1 ㎤ or more. The apparent volume of the silicon carbide block may be about 5 ㎤ or more. The apparent volume of the silicon carbide block may be about 10 ㎤ or more. The apparent volume of the silicon carbide block may be about 20 ㎤ or more. The apparent volume of the silicon carbide block may be about 100 ㎤ or more. The apparent volume of the silicon carbide block may be about 1,000 ㎤ or more. The apparent volume of the silicon carbide block may be about 5,000 ㎤ or more. The apparent volume of the silicon carbide block may be about 1 ㎥ or less. The apparent volume of the silicon carbide block may be smaller than the volume of the internal space of the crucible body (10). The apparent volume may be a volume measured based on the outer shape of the silicon carbide block. The apparent volume may be a volume measured on the assumption that there are no pores at all within the silicon carbide block. The sum of the volume of silicon carbide within the silicon carbide block and the volume of pores within the silicon carbide block may be the apparent volume. The silicon carbide block may have a columnar shape, such as a circular column or a polygonal column. The silicon carbide block may have a polyhedral shape. The silicon carbide block may have a plate shape. The silicon carbide block may have a horn shape, such as a cone or a polygonal pyramid. The silicon carbide block may have a donut shape. The silicon carbide block may have a shape in which a portion is cut. The above silicon carbide block may be single crystal or polycrystalline. The above silicon carbide block may be a sintered body. That is, the above silicon carbide block may be formed into a block shape by sintering silicon carbide particles or the like. The above silicon carbide block may be formed by depositing silicon carbide by chemical vapor deposition. The above silicon carbide block may be formed by depositing silicon carbide by physical vapor deposition. The above silicon carbide block may include α-phase silicon carbide or β-phase silicon carbide. The above silicon carbide block may have high thermal conductivity. The thermal conductivity of the silicon carbide block may be about 10 W / mK or more. The thermal conductivity of the silicon carbide block may be about 20 W / mK or more. The thermal conductivity of the silicon carbide block may be about 30 W / mK or more. The thermal conductivity of the silicon carbide block may be about 50 W / mK or more. The thermal conductivity of the silicon carbide block may be about 70 W / mK or more. The thermal conductivity of the silicon carbide block may be about 100 W / mK or more. The thermal conductivity of the silicon carbide block may be about 110 W / mK or more. The upper limit of the thermal conductivity of the silicon carbide block may be about 2,000 W / mK. The silicon carbide block may have anisotropic thermal conductivity. The silicon carbide block may be arranged to have a thermal conductivity of about 10 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 20 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 30 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 40 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 50 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 70 W / mK or more in a horizontal direction. The silicon carbide block may be arranged to have a thermal conductivity of about 100 W / mK or more in a horizontal direction. The above silicon carbide block may be arranged to have a thermal conductivity of about 110 W / mK or more in a horizontal direction. The upper limit of the thermal conductivity of the silicon carbide block in the horizontal direction may be about 2,000 W / mK. Since the silicon carbide block has a thermal conductivity in the above range, heat generated from the crucible body (20) can be efficiently transferred to the center of the internal space of the crucible body (20). Accordingly, the temperature gradient in the horizontal direction within the crucible body (20) can be minimized. The diameter of the silicon carbide block may be substantially the same as the inner diameter of the crucible body (20). The silicon carbide block may almost completely fill the lower portion of the crucible body (20). At least a portion of the outer surface of the silicon carbide block may be in direct contact with the inner surface of the crucible body (20). Of the outer surface of the silicon carbide block, a portion in contact with the inner surface of the crucible body (20) may be about 20% or more. When the crucible body (20) and the silicon carbide block are partially in contact, heat generated in the crucible body (20) can be easily transferred to the silicon carbide block. The crucible body (20) may have an internal space. The crucible body (20) may accommodate the silicon carbide raw material (10). The crucible body (20) may include a receiving portion, which is a space for accommodating the silicon carbide raw material (10). The crucible body (20) may have a cylindrical shape having an opening with an open upper surface. The crucible body (20) may have a structure capable of charging the silicon carbide raw material (10) therein. The crucible body (20) may include graphite. The crucible body (20) may be made of graphite. The crucible body (20) may be a graphite crucible. The crucible body (20) may be a conductor. The crucible body (20) may be heated by resistive heat caused by an induced current. The density of the crucible body (20) may be 1.70 g / cm3 to 1.90 g / cm3. The density of the crucible body (20) may be 1.75 g / cm3 to 1.90 g / cm3. The density of the crucible body (20) may be 1.75 g / cm3 to 1.85 g / cm3. The crucible cover (30) may be placed on the upper portion of the crucible body (20) and may cover the entrance of the crucible body (20). The crucible cover (30) may have a circular plate shape. The crucible cover (30) may entirely cover the entrance of the crucible body (20). The crucible cover (30) may have a shape corresponding to the entrance of the crucible body (20). The thickness of the crucible cover (30) may be about 10 mm to about 50 mm. The thickness of the crucible cover (30) may be about 15 mm to about 50 mm. The thickness of the crucible cover (30) may be about 15 mm to about 45 mm. The density of the crucible cover (30) may be 1.70 g / cm3 to 1.90 g / cm3. The density of the crucible cover (30) may be 1.75 g / cm3 to 1.90 g / cm3. The density of the crucible cover (30) may be 1.75 g / cm3 to 1.85 g / cm3. The above crucible cover (30) may include graphite. The above crucible cover (30) may be substantially made of graphite. The above crucible cover (30) may be applied in a form that covers the entire opening of the above crucible body (20). The above crucible cover (30) may cover a portion of the opening of the crucible body (20). The crucible cover (30) may include a through hole (not shown). The crucible body (20) and the crucible cover (30) may be assembled to form a crucible. A seed well (21) may be placed on the upper part of the crucible. The seed well (21) may be placed inside the crucible. The above seed (21) may be any one of the wafers to which an off-angle is applied, which is an angle selected in the range of 0 to 8 degrees with respect to the (0001) plane. The above seed crystal (21) may be a substantially single-crystal 4H silicon carbide (SiC) ingot with minimal defects or polymorphic inclusions. The above seed crystal (21) may be substantially composed of 4H silicon carbide (SiC). The seed well (21) may have a diameter of 4 inches or more, 5 inches or more, or 6 inches or more. The seed well (21) may have a diameter of 4 to 12 inches, 4 to 10 inches, or 6 to 8 inches. The seed (21) may be bonded to a seed holder (22). The seed holder (22) may include graphite. The seed holder (22) may be made of graphite. The seed holder (22) may include anisotropic graphite and / or isotropic graphite. The seed holder (22) may be made of anisotropic graphite and / or isotropic graphite. The seed holder (22) may have high thermal conductivity. The seed holder (22) may have high thermal conductivity in a horizontal direction. The seed holder (22) may have thermal conductivity of about 100 W / mK or more in at least one direction. The seed holder (22) may have thermal conductivity of about 110 W / mK or more in at least one direction. The seed holder (22) may have thermal conductivity of about 120 W / mK or more in at least one direction. The seed holder (22) may have thermal conductivity of about 130 W / mK or more in at least one direction. The seed holder (22) may have thermal conductivity of about 140 W / mK or more in at least one direction. The seed holder (22) may have thermal conductivity of about 150 W / mK or more in at least one direction. The crucible cover (30) and the seed holder (22) may be formed integrally with each other. The crucible cover (30) and the seed holder (22) may be formed of graphite. The crucible cover (30) and the seed holder (22) may have a thermal conductivity of about 100 W / mK or more in at least one direction among the horizontal directions. The crucible cover (30) and the seed holder (22) may have a thermal conductivity of about 110 W / mK or more in at least one direction among the horizontal directions. The crucible cover (30) and the seed holder (22) may have substantially the same thermal conductivity according to the direction. The seed (21) and the seed holder (22) may be bonded to each other by an adhesive layer (not shown). The adhesive layer may include a carbide such as a graphite filler and a phenol resin. The adhesive layer may have a low porosity. The seed (21) may be arranged so that the C-side faces downward. The above crucible may include a guide portion (not shown) placed between the seed crystal (21) and the silicon carbide raw material (10). The silicon carbide raw material (10) evaporated by the guide portion may be guided toward the surface of the seed crystal (21). The deposition efficiency of the silicon carbide raw material (10) may be improved by the guide portion. The above guide portion may be arranged along the inner circumference of the crucible. The above guide portion may be arranged along the inner circumference of the crucible body (20). At least a portion of the above guide portion may be arranged in contact with the inner circumference of the crucible body (20). The above guide portion may be arranged spaced apart from the inner circumference of the crucible body (20). The above guide part can be attached to the crucible body (20) by a fastening structure. The guide part can be attached to the crucible body (20) without the fastening structure. At least a part of the guide part can be arranged in a state of being fixed to the crucible body (20). The guide part can be arranged in a state of being detachable from the crucible body (20). Based on the height direction (Y) of the crucible body, the guide part may have an open upper shape. The silicon carbide raw material may be moved to the surface of the seed (21) through the upper part of the guide part. Based on the height direction (Y) of the crucible body, the diameter of the guide part may be the same or may become smaller as it goes from the silicon carbide raw material (10) to the seed well (21). The diameter of the guide part may decrease in a stepwise manner as it goes from the silicon carbide raw material (10) to the seed well (21). The diameter of the guide part may decrease at a constant rate as it goes from the silicon carbide raw material (10) to the seed well (21). The minimum diameter of the above guide portion may be 4 inches to 15 inches. The minimum diameter of the above guide portion may be 4 inches to 12 inches. The minimum diameter of the above guide portion may be 4 inches to 10 inches. The minimum diameter of the above guide portion may be adjusted depending on the diameter size of the silicon carbide ingot to be manufactured. The above guide portion may be manufactured from a material having thermal and mechanical stability. The guide portion may include a carbon-based material. The guide portion may include graphite. The guide portion may be made of graphite. The above guide part may include a groove shape and / or a rough shape on at least a portion of the surface of the guide part so that the silicon carbide raw material (10) can move more smoothly to the surface of the seed (21). The silicon carbide ingot manufacturing device according to the present invention includes a first insulating material (40) surrounding the crucible body (20). The first insulating material (40) may affect the temperature gradient of the crucible. The first insulating material (40) may include a graphite insulating material. The first insulating material (40) may include a rayon-based graphite felt or a pitch-based graphite felt. The first insulation material (40) includes a first insulation material (41) and a first insulation material (42) having different densities. The density of the first insulation material (42) is greater than that of the first insulation material (41). The first insulation material (42) is placed on top of the first insulation material (41). By the above-mentioned first-first insulation material (41) and first-second insulation material (42), the thermal conductivity can be relatively reduced in the region where the silicon carbide ingot grows, and the temperature gradient in the vertical direction can be increased. As a result, the growth rate of the silicon carbide ingot can be appropriately improved, and the length of the silicon carbide ingot can be increased. In addition, the phenomenon of rapid heat conduction to the seed crystal in the early stage of growth of the silicon carbide ingot can be suppressed, so that the occurrence of defects such as seed crystal loss can be minimized. The density ratio of the first-first insulation material (41) to the first-second insulation material (42) may be greater than 1:1.15 and less than 1:1.6. The density ratio of the first-first insulation material (41) to the first-second insulation material (42) may be greater than 1:1.2 and less than 1:1.6. The density ratio of the first-first insulation material (41) to the first-second insulation material (42) may be greater than 1:1.3 and less than 1:1.6. The density ratio of the first-first insulation material (41) to the first-second insulation material (42) may be greater than 1:1.35 and less than 1:1.1.55. The density of the above 1-1 insulation material (41) is 0.11 g / cm 2 0.13 g / cm 2 It can be. The density of the above 1-1 insulation material (41) is 0.115 g / cm 2 0.13 g / cm 2 It can be. The density of the above 1-1 insulation material (41) is 0.115 g / cm 2 0.125 g / cm 2 It could be. The density of the above 1-2 insulation material (42) is 0.15 g / cm 2 0.17 g / cm 2 It can be. The density of the above 1-2 insulation material (42) is 0.155 g / cm 2 0.17 g / cm 2 It can be. The density of the above 1-2 insulation material (42) is 0.155 g / cm 2 0.165 g / cm 2 It could be. When the above range is satisfied, different insulation performances are provided at the upper and lower portions of the crucible, thereby increasing the temperature gradient in the vertical direction while minimizing the temperature gradient in the horizontal direction. As a result, the occurrence of defects in the silicon carbide ingot and wafers manufactured therefrom can be reduced, and the crystal quality can be improved. In the height direction (Y) of the crucible body (20), the length (H2) of the first-first insulation material may be 160 mm to 290 mm. The length (H2) of the first-first insulation material may be 180 mm to 290 mm. The length (H2) of the first-first insulation material may be 200 mm to 290 mm. The length (H2) of the first-first insulation material may be 200 mm to 280 mm. In the height direction (Y) of the crucible body (20), the length (H1) of the first-second insulation material may be 50% to 200% of the length (H2) of the first-first insulation material. The length (H1) of the first-second insulation material may be 60% to 200% of the length (H2) of the first-first insulation material. The length (H1) of the first-second insulation material may be 60% to 190% of the length (H2) of the first-first insulation material. The length (H1) of the first-second insulation material may be 60% to 180% of the length (H2) of the first-first insulation material. When the above range is satisfied, the thermal conductivity can be relatively reduced in the region where the silicon carbide ingot grows, and the temperature gradient in the vertical direction can be increased. In addition, the phenomenon of rapid heat conduction to the seed crystal in the early stage of growth of the silicon carbide ingot can be suppressed. As a result, the growth rate of the silicon carbide ingot manufactured from the silicon carbide ingot manufacturing device can be appropriately increased, and the phenomenon of polymorphic mixing and cracking can be minimized. In addition, the occurrence of defects such as seed crystal loss can be minimized. In the height direction (Y) of the crucible body (20), the length (H1) of the first-second insulation material may be 70% to 140% of the sum of the crucible body length (H3) and the crucible cover length (H4). The length (H1) of the first-second insulation material may be 70% to 135% of the sum of the crucible body length (H3) and the crucible cover length (H4). The length (H1) of the first-second insulation material may be 75% to 135% of the sum of the crucible body length (H3) and the crucible cover length (H4). When the above range is satisfied, the rate of heat transfer from the crucible to the outside can be appropriately controlled, so that the growth rate of the silicon carbide ingot manufactured from the silicon carbide ingot manufacturing device can be appropriately increased, and the phenomenon of polymorphic mixing and cracking can be minimized. The first insulating material (40) may have a thickness of 20 mm or more. The first insulating material (40) may have a thickness of 30 mm or more. The first insulating material (40) may have a thickness of 150 mm or less. The first insulating material (40) may have a thickness of 120 mm or less. The first insulating material (40) may have a thickness of 50 mm or less. When the above ranges are satisfied, the insulating effect can be sufficiently obtained without unnecessary waste of the insulating material. A gap (G) of 0 mm to 10 mm may be formed between the first insulation (40) and the crucible body (20). A gap (G) of 0 mm to 5 mm may be formed between the first insulation (40) and the crucible body (20). A gap (G) of 0 mm to 3 mm may be formed between the first insulation (40) and the crucible body (20). A gap (G) of 1 mm to 3 mm may be formed between the first insulation (40) and the crucible body (20). The gap (G) may serve as a buffer according to a change in the volume of the crucible body (20). The silicon carbide ingot manufacturing device according to the present invention may include a second insulator (50) arranged at the lower portion of the crucible body (20) and a third insulator (60) arranged at the upper portion of the crucible cover (30). The second insulation material (50) may be in contact with the lower part of the crucible body (20). The third insulation material (60) may be in contact with the upper part of the crucible cover (30). A heat dissipation buffer portion (not shown) may be formed between the crucible cover (30), the first insulation material (40), and the third insulation material (60). The heat dissipation buffer portion may be an empty space formed between the crucible cover (30), the first insulation material (40), and the third insulation material (60). The heat dissipation buffer portion may allow heat generated from the crucible to be dissipated more smoothly. The second insulation material (50) and the third insulation material (60) each have a density of 0.12 g / cm 2 0.30 g / cm 2 It can be. The second insulation material (50) and the third insulation material (60) each have a density of 0.13 g / cm 2 0.25 g / cm 2 It can be. The second insulation material (50) and the third insulation material (60) each have a density of 0.14 g / cm 2 0.20 g / cm 2 It can be. When the above range is satisfied, the quality of the silicon carbide ingot can be improved, and the crystal growth atmosphere can be controlled during the growth process of the silicon carbide ingot, so that a silicon carbide ingot of better quality can be grown. The second insulating material (50) and the third insulating material (60) may each have a porosity of 73 vol% to 95 vol%. The second insulating material (50) and the third insulating material (60) may each have a porosity of 76 vol% to 93 vol%. The insulating materials may each have a porosity of 81 vol% to 91 vol%. When the above ranges are satisfied, the frequency of crack occurrence in the silicon carbide ingot being manufactured may be further reduced. The second insulating material (50) and the third insulating material (60) may each have a compressive strength of 0.21 Mpa or more. The second insulating material (50) and the third insulating material (60) may each have a compressive strength of 0.49 Mpa or more. The second insulating material (50) and the third insulating material (60) may each have a compressive strength of 0.78 Mpa or more. The second insulating material (50) and the third insulating material (60) may each have a compressive strength of 3 Mpa or less. The second insulating material (50) and the third insulating material (60) may each have a compressive strength of 2.5 Mpa or less. When the above ranges are satisfied, the thermal and mechanical stability is excellent, and the probability of ash generation is reduced, so that a silicon carbide ingot of better quality can be manufactured. The second insulation material (50) and the third insulation material (60) may each have a thickness of 20 mm or more. The second insulation material (50) and the third insulation material (60) may each have a thickness of 30 mm or more. The second insulation material (50) and the third insulation material (60) may each have a thickness of 150 mm or less. The second insulation material (50) and the third insulation material (60) may each have a thickness of 120 mm or less. The second insulation material (50) and the third insulation material (60) may each have a thickness of 80 mm or less. When the above ranges are satisfied, the insulation effect can be sufficiently obtained without unnecessary waste of the insulation material. A method for manufacturing a silicon carbide ingot according to the present invention comprises the steps of preparing a crucible body containing a silicon carbide raw material, covering an inlet of the crucible body using a crucible cover, arranging a first insulating material surrounding the crucible body and including a first insulating material and a first insulating material having different densities, sublimating silicon carbide from the silicon carbide raw material by heating, and growing a silicon carbide ingot by the sublimated silicon carbide, wherein the density of the first insulating material is greater than that of the first insulating material, the first insulating material is arranged on top of the first insulating material, and the temperature of the silicon carbide ingot is controlled by the first insulating material. FIG. 3 schematically illustrates a cross-section of a manufacturing device for growing a silicon carbide ingot according to one embodiment of the present invention. Referring to FIGS. 1 to 3, the manufacturing method includes a step of preparing a crucible body (20) containing silicon carbide raw material (10). The above silicon carbide raw material (10) may include a powder form having a carbon source and a silicon source. The silicon carbide raw material (10) may include a powder having a carbon source and a silicon source that has been necked together. The silicon carbide raw material (10) may include a powder having a carbon source and a silicon source that has had its surface carbonized. The silicon carbide raw material (10) may be the same as the silicon carbide raw material described above. The above manufacturing method includes a step of covering the entrance of the crucible body (20) using a crucible cover (30). The above crucible cover (30) may include a seed holder (22) integrally with or separately from the crucible cover (30). The seed holder (22) may be used to secure the silicon carbide raw material (10) and the seed crystal (21) so that they face each other. The thermal conductivity of each of the crucible body (20) and the crucible cover (30) may be 80 W / mK or more. The thermal conductivity of each of the crucible body (20) and the crucible cover (30) may be 90 W / mK or more. The thermal conductivity of each of the crucible body (20) and the crucible cover (30) may be 150 W / mK or less. The thermal conductivity of each of the crucible body (20) and the crucible cover (30) may be 80 W / mK or more and 150 W / mK or less. When the above range is satisfied, a silicon carbide ingot having excellent crystallinity and improved mechanical properties can be manufactured through the crucible. When the weight of the above silicon carbide raw material (10) is considered as 1, the weight of the crucible may have a weight ratio (Rw) of 1.5 to 2.7 times. The weight of the crucible may refer to the weight excluding the silicon carbide raw material (10). For example, regardless of whether the seed holder (22) is applied to the crucible cover (30), it may refer to a value excluding the weight of the silicon carbide raw material (10) introduced into the assembled crucible including the seed holder (21). The above crucible may have a length ratio, which is the ratio of the length from the lowest surface where the silicon carbide raw material (10) is located to the surface of the seed crystal (21), when the diameter of the internal space of the crucible body (20) is considered to be 1, of more than 1 time and less than 25 times. When the above range is satisfied, the silicon carbide ingot can have an appropriate degree of supersaturation, thereby improving crystallinity. The above manufacturing method includes a step of arranging a first insulating material (40) surrounding the crucible body (20) and including a first-first insulating material (41) and a first-second insulating material (42) having different densities. The above manufacturing method may include a step of arranging a second insulating material (50) on the lower portion of the crucible body (20) and a third insulating material (60) on the upper portion of the crucible cover (30). The above-mentioned first-first insulation material (41), first-second insulation material (42), second insulation material (50), and third insulation material (60) may be the same as the above-mentioned first-first insulation material, first-second insulation material, second insulation material, and third insulation material. The above-mentioned first-first insulation material (41), first-second insulation material (42), second insulation material (50), and third insulation material (60) can affect the temperature gradient of the crucible or the internal space of the crucible in a crystal growth atmosphere. The density of the first-second insulating material (42) is greater than the density of the first-first insulating material (41). The first-second insulating material (42) is disposed on top of the first-first insulating material (41). By the first-first insulating material (41) and the first-second insulating material (42), the temperature gradient in the vertical direction can be increased while the temperature gradient in the horizontal direction can be minimized. As a result, the occurrence of defects in the silicon carbide ingot and the wafer manufactured therefrom can be reduced, and the crystal quality can be improved. The above manufacturing method includes a step of sublimating silicon carbide from the silicon carbide raw material (10) by heating, and a step of growing a silicon carbide ingot (100) by the sublimated silicon carbide. The above step may be a step of adjusting the internal space of the crucible to a crystal growth atmosphere so that the silicon carbide raw material (10) is vapor-transported to the seed crystal (21) and deposited, and a silicon carbide ingot (100) grown from the seed crystal (21) is prepared. The above step may include a process of adjusting the internal space of the crucible to a crystal growth atmosphere. This may be carried out by wrapping the crucible with the aforementioned insulating material, preparing a reaction vessel (not shown) including the crucible and the insulating material surrounding it, placing it in a reaction chamber (70) such as a quartz tube, and then heating the crucible or the like using a heating means (80). The reaction vessel is positioned within the above reaction chamber (70), and the internal space of the crucible can be induced to a temperature suitable for a crystal growth atmosphere by the heating means (80). This temperature is one of the important factors for the crystal growth atmosphere, and a more suitable crystal growth atmosphere can be formed by adjusting conditions such as pressure and gas movement. The aforementioned insulating material is positioned between the reaction chamber (70) and the reaction vessel, thereby facilitating the formation and control of the crystal growth atmosphere. The above step may be carried out by heating a heating means (80) outside the reaction chamber (70). The above step may be carried out simultaneously with or separately from the heating to remove air by depressurizing, and in a depressurized atmosphere and / or an inert atmosphere (Ar atmosphere, N2 atmosphere, or a mixed atmosphere thereof). The above step allows the silicon carbide raw material (10) to be vapor-transported to the surface of the seed crystal (21), thereby inducing the growth of silicon carbide crystals and growing them into a silicon carbide ingot (100). In the above step, the temperature gradient in the vertical direction of the silicon carbide ingot (100) can be increased by the first insulating material (40). In the above step, the deposition rate of the silicon carbide gas is increased by the first insulating material (40), so that the length of the silicon carbide ingot (100) can be increased. In the above step, the growth rate of the silicon carbide ingot (100) can be appropriately increased by the first insulating material (40), and the phenomenon of polymorphic mixing and cracking can be minimized. The above step can be applied under growth temperature conditions of 2,100°C to 2,450°C and growth pressure conditions of 1 torr to 100 torr. When such temperature and pressure are applied, silicon carbide ingots can be manufactured more efficiently. In the above step, conditions such as a growth temperature of 2,100 ℃ to 2,450 ℃ at the upper and lower surface temperatures of the crucible and a growth pressure of 1 torr to 50 torr may be applied. In the above step, conditions such as a growth temperature of 2,150 ℃ to 2,450 ℃ at the upper and lower surface temperatures of the crucible and a growth pressure of 1 torr to 40 torr may be applied. In the above step, conditions such as a growth temperature of 2,150 ℃ to 2,350 ℃ at the upper and lower surface temperatures of the crucible and a growth pressure of 1 torr to 30 torr may be applied. When the above ranges are satisfied, a silicon carbide ingot of higher quality can be manufactured. In the above step, the difference between the central temperature of the bottom surface of the crucible body (20) and the central temperature of the top surface of the crucible cover (30) may be 50°C to 200°C. In the above step, the difference between the central temperature of the bottom surface of the crucible body (20) and the central temperature of the top surface of the crucible cover (30) may be 50°C to 180°C. In the above step, the difference between the central temperature of the bottom surface of the crucible body (20) and the central temperature of the top surface of the crucible cover (30) may be 50°C to 150°C. When the above range is satisfied, the deposition of silicon-rich gas (Si-rich gas) in the seed crystal (21) can be minimized in the initial stage of growing the silicon carbide ingot, so that the carbon and silicon of the silicon carbide ingot can be controlled at a constant ratio, and the defects of the silicon carbide ingot and the silicon carbide wafer manufactured therefrom can be reduced and the crystallinity can be improved. The above silicon carbide ingot may contain 4H SiC. The surface of the above silicon carbide ingot may have a convex shape or a flat shape. If the surface of the silicon carbide ingot is formed in a concave shape, other polymorphs such as 6H-SiC may be mixed in addition to the intended 4H-SiC crystal, which may deteriorate the quality of the silicon carbide ingot. If the surface of the silicon carbide ingot is formed in an excessively convex shape, cracks may occur in the silicon carbide ingot itself, or the crystals may break when processed into wafers. Whether the above silicon carbide ingot is an excessively convex ingot is determined based on the degree of warpage, and the warpage of the silicon carbide ingot manufactured according to the manufacturing method of the present invention may be 20 mm or less. The above warpage can be evaluated by placing a sample of the silicon carbide ingot on which growth is completed on a platen, measuring the height of the center and edge of the ingot based on the rear surface of the ingot using a height gauge, and calculating the value of (center height - edge height). A positive warpage value indicates convexity, a value of 0 indicates flatness, and a negative value indicates concaveness. The above silicon carbide ingot may have a convex or flat surface and may have a warpage of 0 mm to 14 mm. The above silicon carbide ingot may have a warpage of 0 mm to 11 mm. The above silicon carbide ingot may have a warpage of 0 mm to 8 mm. When the above ranges are satisfied, wafer processing may be easier and the occurrence of breakage may be reduced. The above silicon carbide ingot may be a substantially single-crystal 4H SiC ingot with minimal defects or polymorphic inclusions. The above silicon carbide ingot is substantially composed of 4H SiC, and its surface may be convex or flat. The above silicon carbide ingot can provide a silicon carbide wafer of higher quality by reducing defects that may occur in silicon carbide ingots. The silicon carbide ingot manufactured according to the above manufacturing method can reduce pits on its surface, and for example, in an ingot having a diameter of 4 inches or more, the pits included in its surface can be 10 k / cm2 or less. The surface pit measurement of the above silicon carbide ingot can be evaluated by observing a total of five locations, one location in the central portion of the ingot surface excluding the facets, and four locations in the 3 o'clock, 6 o'clock, 9 o'clock, and 12 o'clock directions located approximately 10 mm inside the central portion from the ingot edge, using an optical microscope, and measuring the pit per unit area (1 ㎠) at each location, and then taking the average value. The silicon carbide ingot may be processed by applying external grinding equipment to trim the outer edge of the ingot (External Grinding), cutting it to a certain thickness (Slicing), and then edge grinding, surface grinding, and polishing. The above cutting step may be a step of slicing the silicon carbide ingot to have a certain off-angle to prepare a sliced ​​crystal. The off-angle is in 4H SiC.

[0001] Based on the surface. The off-angle may be an angle selected from 0 to 15 degrees. The off-angle may be an angle selected from 0 to 12 degrees. The off-angle may be an angle selected from 0 to 8 degrees. The above cutting step can be applied without limitation to any slicing method commonly used in wafer manufacturing. For example, cutting using a diamond wire or a wire containing diamond slurry, or cutting using a blade or wheel partially coated with diamond, etc. can be applied. The thickness of the above-mentioned sliced ​​crystal can be adjusted in consideration of the thickness of the wafer to be manufactured, and can be sliced ​​to an appropriate thickness in consideration of the thickness after polishing in the polishing step described later. The above polishing step may be a step of polishing the sliced ​​crystal to a thickness of 300 um to 800 um to form a silicon carbide wafer. The above polishing step may be performed using a polishing method typically applied to wafer manufacturing. For example, a method in which polishing is performed after processes such as lapping and / or grinding is performed may be applied. Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the claims below also fall within the scope of the present invention. Hereinafter, the present invention will be described in more detail based on examples and comparative examples. However, the following examples and comparative examples are merely illustrative examples for further explaining the present invention, and the present invention is not limited to the following examples and comparative examples. Example Example 1 The silicon carbide ingot manufacturing device illustrated in Fig. 1 was used. A silicon carbide raw material (10) was charged into the lower part of the crucible body (20), and a seed crystal (21) was placed on the upper part of the crucible body (20). The seed crystal (21) was made of a 6-inch 4H-SiC crystal, and was fixed in a conventional manner so that the C plane ((0001) plane) was directed toward the silicon carbide raw material (10) at the lower part of the crucible body (20). Thereafter, the crucible body (20) was covered using a crucible cover (30). A first insulating material (40) including a first-first insulating material (41) and a first-second insulating material (42) was placed on the outside of the crucible body (20). At this time, the density, length, etc. of the first-first insulating material (41) and the first-second insulating material (42) are as shown in Table 1 below. Simultaneously with the placement process of the first insulating material (40) or in a separate step, a second insulating material (50) was placed on the lower part of the crucible body (20) and a third insulating material (60) was placed on the upper part of the crucible cover (30). Afterwards, a heating coil, which is a heating means, was placed, the internal space of the crucible was depressurized to adjust to a vacuum atmosphere, argon (Ar) gas was injected so that the internal space reached 760 torr, and then the internal space was depressurized again. At the same time, the temperature of the internal space was increased to 2,300°C at a heating rate of 5°C / min. Thereafter, a silicon carbide ingot was grown on the surface of the seed crystal facing the silicon carbide raw material for 100 hours under the conditions of a temperature of 2,300°C and a pressure of 20 torr. Thereafter, the temperature of the internal space was cooled to 25°C at a rate of 5°C / min, and at the same time, the pressure of the internal space was adjusted to 760 torr, and then the cooled silicon carbide ingot was obtained. Thereafter, the outer surface of the silicon carbide ingot was ground to about 5% of the maximum outer diameter to process it into a cylindrical shape with a uniform outer diameter, and it was cut to have an off angle of about 4° with respect to the (0001) plane of the silicon carbide ingot, and a wafer sample with a thickness of 360 μm was manufactured. Examples 2 to 8 A silicon carbide ingot and wafer sample were manufactured by the same process as Example 1, except that the first-first insulator (41) and the first-second insulator (42) were arranged in the silicon carbide ingot manufacturing device illustrated in Fig. 1 according to the specifications shown in Table 1 below. Comparative Example 1 Silicon carbide ingot and wafer samples were manufactured by the same process as Example 1, except that the silicon carbide ingot manufacturing device illustrated in FIG. 4 was used instead of the silicon carbide ingot manufacturing device illustrated in FIG. 1. Comparative Examples 2 to 5 A silicon carbide ingot and wafer sample were manufactured by the same process as Example 1, except that the first-first insulator (41) and the first-second insulator (42) were arranged in the silicon carbide ingot manufacturing device illustrated in Fig. 1 according to the specifications shown in Table 1 below. Whether to place insulation material No. 1-1 and insulation material No. 1-2. Insulation material No. 1-1. 1) Density 1-2 insulation 2) Density density ratio 3) 1-1 Insulation length 4) 1-2 Insulation length 5) Length ratio 6) Ratio of the length of the crucible to the length of the 1st and 2nd insulation materials 7) Unit - g / cm 2 mm% Example 1 ○ 0.12 0.16 1.33 0 20 0 25 0 12 5 1 19 Example 2 ○ 0.12 0.16 1.33 0 16 0 29 0 5 5 1 38 Example 3 ○ 0.12 0.16 1.33 0 29 0 16 0 18 176 Example 4○0.130.151.154200250125119Example 5○0.110.151.364200250125119Example 6○0.130.171.30816029055138Example 7○0.110.151.36416029055138Example 8○0.110.171.545200250125119Comparative Example 1×0.16 8) -450 9)--Comparative Example 2 ○ 0.16 0.13 0.8 12 16 0 29 0 5 5 13 8 Comparative Example 3 ○ 0.18 0.12 0.66 7 20 0 25 0 12 5 11 9 Comparative Example 4 ○ 0.15 0.14 0.93 3 16 0 29 0 5 5 13 8 Comparative Example 5 ○ 0.12 0.17 0.70 6 20 0 25 0 12 5 11 9 1) 1-1 insulation: 1-1 insulation (41) of Fig. 1 2) 1-2 insulation: 1-2 insulation (42) of Fig. 1 3) Density ratio: Density of the 1-2 insulation (42) / Density of the 1-1 insulation (41) 4) Length of the 1-1 insulation: H2 5 of Fig. 2) Length of the 1-2 insulation: H1 6 of Fig. 2) Length ratio: (H1 / H2) of Fig. 2 × 1007) Ratio of the length of the 1st-2nd insulation material to the length of the crucible: [(H1) / (H3+H4)] of Fig. 2 × 1008) 0.16: Density of the 1st insulation material (40) of Fig. 4 9) 450: Length of the 1st insulation material (40) in the height direction (Y) of Fig. 4 Experimental example Experimental Example 1 - Quality Evaluation of Silicon Carbide Ingots The surfaces of the silicon carbide ingots obtained in Examples 1 to 8 and Comparative Examples 1 to 5 were observed, and the quality of the silicon carbide ingots was evaluated according to the following criteria. The results are shown in Table 2 below. - ◎: ​​The surface of the silicon carbide ingot is not carbonized and has a convex shape. - △: The surface of the silicon carbide ingot is not carbonized and has a concave shape. - ×: The surface of the silicon carbide ingot is carbonized. Experimental Example 2 - Polymorphism Inclusion For each wafer sample manufactured in Examples 1 to 8 and Comparative Examples 1 to 5, the presence or absence of polymorphic inclusions was observed. The presence or absence of polymorphic inclusions was evaluated using an ultraviolet-induced luminescence image analysis method according to the following criteria, and the results are shown in Table 2 below. - Good: No polymorphic mixing observed - Defective: Polymorphic mixing observed Experimental Example 3 - Seed loss assessment The presence or absence of seed loss in the silicon carbide ingot manufacturing process of Examples 1 to 8 and Comparative Examples 1 to 5 was evaluated according to the following criteria, and the results are shown in Table 2 below. - Good: No cracks observed - Defect: Cracks observed due to seed loss Experimental Example 4 - Defect Evaluation on the Wafer Surface Each wafer sample manufactured in Examples 1 to 8 and Comparative Examples 1 to 5 was cut into a size of 50 mm × 50 mm, and then etched by immersing in potassium hydroxide (95%) at a temperature of 600°C for 3 minutes. Thereafter, the surface of the etched wafer sample was photographed using an optical microscope (Eclipse LV150, Nikon). Specifically, an image of the wafer sample according to Example 1 is shown in FIG. 8, and an image of the wafer sample according to Comparative Example 1 is shown in FIG. 9. In addition, in order to quantitatively evaluate the defect density of the wafer sample, an area of ​​500 μm × 500 μm was randomly designated 12 times within the surface of the wafer sample, and the number of defects in each area was determined, and then the average number of defects per unit area was calculated. Based on the above number of defects, the defect densities for penetrating blade dislocations (TED), basal plane dislocations (BPD), and penetrating screw dislocations (TSD) were calculated, and the results are shown in Table 2 below. Experimental Example 5 - Evaluation of Length and Growth Rate For the silicon carbide ingots obtained in Examples 1 to 8 and Comparative Examples 1 to 5, respectively, the height of the edge of the silicon carbide ingot was measured to calculate the length of the silicon carbide ingot. In addition, the growth rate per hour of the silicon carbide ingot was measured, and the results are shown in Table 2 below. Ingot quality assessment, polymorphism inclusion, seed crystal loss assessment, TEDBPDTSD, length growth rate, unit - number of defects / cm 2mm㎛ / hrExample 1◎GoodGood3,00012098031.2225Example 2◎GoodGood3,50511868029.4220Example 3◎GoodGood3,30013048529.6222Example 4◎GoodGood2,91012542031.3228Example 5◎GoodGood2,89518588229.5222Example 6◎GoodGood3,20016568632.0230Example 7◎GoodGood3,30020043029.8224Example 8◎GoodGood2,90020169030.1224Comparative Example 1△DefectiveDefective5,2005,1401,68015.4185Comparative Example 2×DefectiveDefective4,3003,8402,68017.1192Comparative Example 3×DefectiveDefective5,2005,1402,55017.2192Comparative Example 4△DefectiveDefective6,8005,2302,10015.1188Comparative Example 5×DefectiveDefective6,6005,1103,10518.6195 Looking at Tables 1 and 2 above, it was confirmed that Examples 1 to 8, which used a silicon carbide ingot manufacturing device including two types of insulating materials with different densities and in which the insulating material with a relatively high density was placed on top, increased the length of the silicon carbide ingot, suppressed the occurrence of defects such as seed loss, reduced the occurrence of wafer defects, and improved the crystal quality, compared to Comparative Examples 1 to 5. More specifically, when looking at the photo of the silicon carbide ingot of Example 1 (Fig. 5), it was confirmed that the quality of the ingot was superior compared to the photo of the silicon carbide ingot of Comparative Example 1 (Fig. 6) and the photo of the silicon carbide ingot of Comparative Example 2 (Fig. 7). In addition, when looking at the photo taken with an optical microscope of the wafer of Example 1 (Fig. 8), it was confirmed that the number of defects was significantly reduced compared to the photo taken with an optical microscope of the wafer of Comparative Example 1 (Fig. 9). The embodiment can be applied to a silicon carbide ingot manufacturing device and a method for manufacturing a silicon carbide ingot using the same.

Claims

1. A crucible body that holds silicon carbide raw material; A crucible cover placed on the upper part of the crucible body; and Includes a first insulating material surrounding the above crucible body, The above first insulation material includes a first-first insulation material and a first-second insulation material having different densities, The density of the above 1-2 insulation material is greater than the density of the above 1-1 insulation material, A silicon carbide ingot manufacturing device in which the above-mentioned 1-2 insulation material is placed on top of the above-mentioned 1-1 insulation material.

2. In paragraph 1, A silicon carbide ingot manufacturing device, wherein the density ratio of the above-mentioned 1-1 insulating material: the density ratio of the above-mentioned 1-2 insulating material is greater than 1:1.15 and less than 1:1.

6.

3. In paragraph 1, The density of the above 1-1 insulation material is 0.11 g / cm 2 0.13 g / cm 2 A device for manufacturing silicon carbide ingots.

4. In paragraph 1, The density of the above 1-2 insulation material is 0.15 g / cm 2 0.17 g / cm 2 A device for manufacturing silicon carbide ingots.

5. In paragraph 1, A silicon carbide ingot manufacturing device, wherein, in the height direction of the crucible body, the length of the first-second insulating material is 50% to 200% of the length of the first-first insulating material.

6. In paragraph 5, A silicon carbide ingot manufacturing device, wherein the length of the above-mentioned 1-1 insulation material is 160 mm to 290 mm.

7. In paragraph 1, A silicon carbide ingot manufacturing device, wherein, in the height direction of the crucible body, the length of the first and second insulating materials is 70% to 140% of the sum of the length of the crucible body and the length of the crucible cover.

8. In paragraph 1, A silicon carbide ingot manufacturing device comprising a second insulator arranged at the lower portion of the crucible body and a third insulator arranged at the upper portion of the crucible cover.

9. In paragraph 1, A silicon carbide ingot manufacturing device, wherein a gap of 0 mm to 10 mm is formed between the first insulating material and the crucible body.

10. Step of preparing a crucible body containing silicon carbide raw material; A step of covering the entrance of the crucible body using a crucible cover; A step of arranging a first insulating material surrounding the crucible body and including a first-first insulating material and a first-second insulating material having different densities; A step of sublimating silicon carbide from the silicon carbide raw material by heating; and It includes a step of growing a silicon carbide ingot by the above-mentioned sublimated silicon carbide, The density of the above 1-2 insulation material is greater than the density of the above 1-1 insulation material, The above 1-2 insulation material is placed on top of the above 1-1 insulation material, A method for manufacturing a silicon carbide ingot, wherein the temperature of the silicon carbide ingot is controlled by the first insulating material.

11. In paragraph 10, A method for manufacturing a silicon carbide ingot, wherein the temperature gradient in the vertical direction of the silicon carbide ingot is increased by the first insulating material.

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