Auxiliary temperature-control device for semiconductor process chamber, and semiconductor process chamber

Abstract

Provided in the present application are an auxiliary temperature-control device for a semiconductor process chamber, and a semiconductor process chamber. The auxiliary temperature-control device comprises: a thermally conductive assembly, which is configured to fixedly connect to a semiconductor process chamber, so as to exchange heat with a process kit in the semiconductor process chamber; a cooling flow channel, which is arranged in the thermally conductive assembly and is configured to introduce a cooling fluid to cool the thermally conductive assembly; and a heating assembly, which is arranged in the thermally conductive assembly and is configured to heat the thermally conductive assembly. By means of providing the thermally conductive assembly and providing the cooling flow channel and the heating assembly in the thermally conductive assembly, the auxiliary temperature-control device of the present application can regulate the temperature of the thermally conductive assembly by means of the cooling flow channel and the heating assembly, and the thermally conductive assembly can exchange heat with a process kit, so as to achieve the aim of regulating the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding the influence on a wafer, and improving the product quality of the wafer.

Description

Auxiliary temperature control device for semiconductor process chamber and semiconductor process chamber Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to an auxiliary temperature control device for a semiconductor process chamber and a semiconductor process chamber. Background Art

[0002] Physical vapor deposition (PVD) is a widely used technology for depositing metal or non-metallic thin films in the semiconductor industry, with a wide range of applications. It primarily involves introducing a process gas into a process chamber, generating a strong potential difference within the chamber, which ionizes the gas into a plasma. The resulting magnetic field is then controlled to cause the plasma to bombard a target material, and the bombarded target atoms are deposited on the wafer surface to form the target film.

[0003] However, the process chamber in the prior art has poor temperature control capability for the peripheral area of ​​the wafer, and the wafer temperature cannot meet the standard during the process, resulting in poor wafer quality.

[0004] Summary of the Invention

[0005] The present application aims to at least solve the problem in the prior art that the process chamber has poor temperature control capability over the process area, the wafer temperature cannot meet the standard during the process, and the wafer quality is poor. An auxiliary temperature control device and a semiconductor process chamber are proposed for a semiconductor process chamber.

[0006] To achieve the purpose of the present application, an auxiliary temperature control device for a process chamber is provided, comprising: a heat conducting component, which is fixedly connected to the semiconductor process chamber to exchange heat with the process kit in the semiconductor process chamber; a cooling channel, which is arranged in the heat conducting component, and is used to pass a cooling fluid to cool the heat conducting component; and a heating component, which is arranged in the heat conducting component and is used to heat the heat conducting component.

[0007] In some embodiments, the thermally conductive component comprises:

[0008] a first heat conducting member, configured to be connected to a carrier of the semiconductor process chamber to exchange heat with a deposition ring in the process kit;

[0009] The cooling channel comprises:

[0010] a first cooling channel, disposed in the first heat conducting member;

[0011] The heating assembly comprises:

[0012] The first heating element is arranged in the first heat conducting element.

[0013] In some embodiments, the thermally conductive component comprises:

[0014] a second heat conducting member, configured to be connected to an inner wall of a chamber body of the semiconductor process chamber to perform heat exchange with a liner assembly in the process kit;

[0015] The cooling channel comprises:

[0016] a second cooling channel, disposed in the second heat conducting member;

[0017] The heating assembly comprises:

[0018] The second heating element is arranged in the second heat conducting element.

[0019] In some embodiments, the first heat conducting member comprises:

[0020] a first heat exchange portion having a first heat exchange surface for contacting with the deposition ring;

[0021] The first connecting portion is connected to the inner circumference of the first heat exchange portion, and the first connecting portion is used to be connected to the supporting device.

[0022] In some embodiments, a first annular protrusion and a first annular groove are provided on the first heat exchange part, the first annular protrusion is located on the outer peripheral side of the first heat exchange surface, and the first annular groove is located between the first heat exchange surface and the first annular protrusion, and the first annular protrusion and the first annular groove are used to cooperate with the inner lining component of the semiconductor process chamber to form a maze channel.

[0023] In some embodiments, the second heat conductor has a second heat exchange portion and a second connecting portion, the second heat exchange portion has a second heat exchange surface for fitting with the lining assembly, the second connecting portion is connected to the outer peripheral side of the second heat exchange portion, and the second connecting portion is used to connect to the inner wall of the chamber body.

[0024] In some embodiments, the auxiliary temperature control device further comprises:

[0025] The first conductive member is used to be electrically connected to the first heat conductive member and the supporting device respectively.

[0026] In some embodiments, the auxiliary temperature control device further comprises:

[0027] The second conductive member is used to be electrically connected to the second heat conductive member and the lining assembly respectively.

[0028] In some embodiments, the auxiliary temperature control device further includes a connecting wire.

[0029] The connecting wires are electrically connected to the first heat conductor and the second heat conductor respectively, and the second heat conductor is also used to electrically connect to the inner wall of the chamber body, so that the supporting device, the first heat conductor, the second heat conductor, the lining assembly and the inner wall of the chamber body are electrically connected to each other.

[0030] In some embodiments, the auxiliary temperature control device further comprises:

[0031] The temperature measuring component is arranged on the heat conducting component to detect the temperature of the process kit.

[0032] According to the second aspect of the present application, a semiconductor process chamber is also disclosed, comprising: a chamber body; a carrier device and a process kit arranged in the chamber body; the above-mentioned auxiliary temperature control device, wherein the auxiliary temperature control device is fixedly connected to at least one of the chamber body and / or the carrier device to adjust the temperature of the process kit.

[0033] In some embodiments, the process kit includes: a lining assembly and a deposition ring, the lining assembly is connected to the chamber body, and the deposition ring is arranged around the supporting device; the auxiliary temperature control device includes: a first heat conductor and / or a second heat conductor, the first heat conductor is connected to the supporting device, and the first heat conductor is fitted with the deposition ring; the second heat conductor is connected to the inner wall of the chamber body, and the second heat conductor is fitted with the lining assembly.

[0034] In some embodiments, the outer circumference of the deposition ring has an annular assembly portion, the assembly portion extends to the outside of the carrier device, and the first heat conductor is attached to the assembly portion.

[0035] In some embodiments, the lining assembly includes: a side wall portion disposed in a direction perpendicular to a bearing surface of the bearing device;

[0036] The bottom wall portion is connected to the side wall portion, the bottom wall portion is arranged in a direction parallel to the bearing surface, and the second heat conducting member is attached to the bottom wall portion.

[0037] In some embodiments, the outer circumference of the deposition ring has a mounting portion, the mounting portion extends to the outside of the carrying device, and the mounting portion has a first side facing the carrying surface and a second side facing away from the carrying surface;

[0038] An annular slope is provided on a first side of the assembly portion, and a height of the annular slope gradually increases from the inside to the outside of the deposition ring;

[0039] The liner assembly further comprises:

[0040] The shielding portion is connected to the inner peripheral wall of the bottom wall portion and is located above the annular inclined surface.

[0041] In some embodiments, a first channel is formed between the inner surface of the shielding portion facing the annular slope and the annular slope; a second channel connected to the first channel is formed between the inner peripheral wall of the bottom wall portion and the outer peripheral wall of the assembly portion; the first channel and the second channel together form a part of a maze channel.

[0042] This application has the following beneficial effects:

[0043] The auxiliary temperature control device provided in the present application, by setting a heat-conducting component and setting a cooling channel and a heating component in the heat-conducting component, can adjust the temperature of the heat-conducting component through the cooling channel and the heating component, so as to perform heat exchange between the heat-conducting component and the process kit, thereby achieving the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding affecting the wafer, and improving the product quality of the wafer.

[0044] The semiconductor process chamber provided in the present application can prevent the temperature of the process kit from being too high or too low by adopting the above-mentioned auxiliary temperature control device provided in the present application, avoid affecting the wafer, and improve the product quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] FIG1 is a schematic structural diagram of a semiconductor process chamber in the prior art;

[0046] FIG2 is a schematic diagram of heat transfer direction in a semiconductor process chamber in the prior art;

[0047] FIG3 is a schematic structural diagram of a first heat conducting member of an auxiliary temperature control device according to an embodiment of the present application;

[0048] FIG4 is a schematic structural diagram of a second heat conducting member of the auxiliary temperature control device according to an embodiment of the present application;

[0049] FIG5 is a schematic diagram of an auxiliary temperature control device according to an embodiment of the present application used in a semiconductor process chamber;

[0050] FIG6 is a partial enlarged view of portion A in FIG5 ;

[0051] FIG7 is a partial enlarged view of portion B in FIG6 ;

[0052] FIG8 is a schematic diagram of heat transfer direction of a semiconductor process chamber during a high-power sputtering process according to an embodiment of the present application;

[0053] FIG9 is a schematic diagram of heat transfer direction of a semiconductor process chamber during a low-power sputtering process according to an embodiment of the present application;

[0054] List of reference numerals:

[0055] 10. Thermal conductive component; 20. Cooling channel; 30. Heating component; 50. Carrying device; 51. Ceramic part; 52. Metal part; 60. Deposition ring; 61. Assembly part; 611. Annular slope; 612. Second annular protrusion; 62. Main body; 70. Liner assembly; 71. Side wall; 72. Bottom wall; 721. Second annular groove; 73. Shielding part; 80. Chamber body; 81. Upper chamber; 82. Lower chamber; 90. Labyrinth passage; 91. First passage; 92. Second passage; 93. Third passage; 110. Refrigerant pipe; 120. Annular step structure;

[0056] 10a, first heat-conducting member; 11a, first heat exchange portion; 111a, first heat exchange surface; 112a, first annular protrusion; 113a, first annular groove; 12a, first connecting portion; 20a, first cooling channel; 30a, first heating member; 40a, first conductive member; 100a, first temperature measuring member;

[0057] 10b, second heat-conducting member; 11b, second heat exchange portion; 111b, second heat exchange surface; 12b, second connecting portion; 20b, second cooling channel; 30b, second heating member; 40b, second conductive member; 100b, second temperature measuring member. DETAILED DESCRIPTION

[0058] In order to enable those skilled in the art to better understand the technical solution of the present application, the auxiliary temperature control device for a semiconductor process chamber and the semiconductor process chamber provided by the present application are described in detail below with reference to the accompanying drawings.

[0059] In the related art, a process chamber for semiconductor processing, as shown in FIG1 , comprises: a chamber body 1, a carrier device 2 disposed in the chamber body 1, and a process kit including a liner assembly 3, a deposition ring 4, and a shielding ring 5. The gas source 6 in FIG1 is used to deliver process gas into the chamber body 1. A target material 7 is provided on the top of the chamber body 1; the liner assembly 3 is located on the outer peripheral side of the carrier device 2; the carrier device 2 is used to place wafers, and the deposition ring 4 is disposed between the carrier device 2 and the liner assembly 3. The carrier device 2, the deposition ring 4, the liner assembly 3, and the target material 7 divide the interior of the chamber body 1 into a process zone 8 and a non-process zone 9. The process zone 8 is used for performing semiconductor processes, and the gas source 6 is connected to the non-process zone 9.

[0060] The process chamber in the related art has the following problems:

[0061] First, during the high-power (22kW to 55kW) sputtering process for aluminum and other thin films, carrier device 2 must move upward, simultaneously driving deposition ring 4 upward. Upon reaching a certain height, deposition ring 4 contacts shielding ring 5 and continues upward, driving shielding ring 5 upward and away from liner assembly 3 to form a flow gap. Gas from gas source 6 enters non-processing zone 9 before passing through this flow gap into process zone 8 for the plasma sputtering process.

[0062] After entering process chamber 8, the gas is excited into plasma. Confined by a magnetic field, the plasma bombards the target material 7. The bombarded target atoms are deposited on the wafer surface to form the target film. The portion that sputters onto the wafer to form a thin film is the effective sputtering portion, while the portion that sputters onto the liner assembly 3, shielding ring 5, and deposition ring 4 is the ineffective sputtering portion.

[0063] The inventors have found through research that: as shown in FIG2 , a large amount of process heat generated by the plasma during the sputtering process will be transferred to the process kit including the liner assembly 3, the deposition ring 4 and the shielding ring 5 along directions 1 and 2, resulting in an increase in the temperature of the liner assembly 3, the shielding ring 5, the deposition ring 4, etc. Since the deposition ring 4 is on the outer peripheral side of the carrier 2, the heat dissipation efficiency of the deposition ring 4 in direction 3 is poor; since the shielding ring 5 has no contact with the liner assembly 3 during the process, the heat transfer efficiency of the shielding ring 5 in direction 4 in FIG2 is also very poor; since the non-process interval 9 is in a vacuum state, the heat transfer efficiency of the liner assembly 3 to the non-process interval 9 along direction 5 is also extremely low; and since the bottom wall of the liner assembly 3 is farther from the side wall of the chamber body 1 than the side wall of the liner assembly 3, the heat transfer efficiency of the liner assembly 3 along direction 6 is extremely poor. It can be seen that the liner assembly 3, the shielding ring 5, and the deposition ring 4 have extremely poor heat dissipation effects in all directions, resulting in increasingly higher accumulated temperatures on the process kit. Consequently, the process kit including the liner assembly 3, the deposition ring 4, and the shielding ring 5 will radiate heat to the wafer along direction 7, leading to severe thermal stress defects in wafer film formation. In other words, in the related art, during high-power (22KW to 55KW) continuous sputtering of aluminum and other types of thin films, there is a problem of insufficient cooling and temperature control capabilities for the process kit including the liner assembly 3, the deposition ring 4, and the shielding ring 5, leading to severe thermal stress defects in wafer film formation.

[0064] Secondly, for the sputtering process of metals and metal nitrides with low power (1KW to 10KW) and relatively thin film layers (i.e., short sputtering time), since the thin film formation process of these materials does not produce a particularly strong thermal effect like aluminum, the low power sputtering and short sputtering time lead to a relatively slow temperature accumulation. Generally speaking, the process kit takes a long time to reach 200°C during the continuous sputtering process. Therefore, there is a need for rapid heating to the process temperature. Moreover, since the heat of the process kit will continue to accumulate during this process, the temperature of the process kit will also produce an edge heat radiation effect on the wafer.

[0065] For example: during the sputtering process of the first few wafers, the process kit including the liner assembly 3, the deposition ring 4 and the shielding ring 5 has not yet accumulated much heat, and the heat radiation to the edge of the wafer is small; as the sputtering time continues to increase, the process kit accumulates a large amount of process heat, and the heat radiation to the edge of the wafer gradually increases; this causes a large difference in the film quality of the first few wafers (low process kit heat radiation) and the subsequent wafers (strong process heat radiation), forming a first-piece effect, and thus the problem of unstable wafer quality. Moreover, the process kit including the liner assembly 3, the deposition ring 4 and the shielding ring 5 in the related art not only has poor cooling and temperature control capabilities, but also has no heating temperature control capabilities, resulting in changes in the temperature of the process kit during the continuous process. This change causes a large temperature difference between the first few wafers and the subsequent wafers of the process kit, forming a more obvious first-piece effect in film quality. In other words, the process kit including the liner assembly 3, the deposition ring 4 and the shielding ring 5 in the related art performs poorly in cooling and heating, can only be heated passively, and the temperature is uncontrollable.

[0066] Thirdly, during the initial maintenance and restoration of the target material 7 or process kit, it is very easy to have purity problems in the chamber body 1, which can lead to various defects in the wafer during the process. This is because the liner assembly 3, deposition ring 4, and shielding ring 5 in the process kit are mostly metal components. When the vacuum chamber is broken and exposed to the atmosphere during maintenance, the metal components absorb a large amount of impurities such as water vapor and oxygen. If the adsorbed impurities are not removed in time after the chamber maintenance and restoration is completed, they will precipitate in a high-temperature environment, accompanied by plasma sputtering, forming thin film defects. The more residual impurities, the more serious the film defects formed.

[0067] To this end, the relevant technology uses an additional halogen lamp on the bottom side wall of the chamber to irradiate and heat the lining component 3, the shielding ring 5, and the deposition ring 4 after maintenance to remove impurities. However, due to the limited heating capacity of the halogen lamp, the heating capacity of the lining component 3, the shielding ring 5, and the deposition ring 4 is not obvious, it is difficult to reach a higher temperature, and impurities cannot be effectively removed.

[0068] Again, after thin films such as nitride are sputtered onto the lining component 3, the shielding ring 5, and the deposition ring 4, when the process is idle (no DC sputtering, no plasma heat source generated), the temperature of the lining component 3, the shielding ring 5, and the deposition ring 4 will drop, and the nitride film will harden and fall off, spreading in the chamber or even falling onto the wafer, causing wafer defects.

[0069] Finally, during the process, the shielding ring 5, deposition ring 4, and the insulating portion of the carrier 2 are at a floating potential. The chamber body 1, however, is at zero potential, creating a significant potential difference with the negative potential of the carrier 2. This causes the process gas to ignite in the non-processing zone 9, contaminating the coating within the chamber body 1.

[0070] In order to solve the above problems, as shown in Figures 3 and 4, the present application discloses an auxiliary temperature control device for a semiconductor process chamber. The auxiliary temperature control device includes a heat-conducting component 10, a cooling channel 20, and a heating component 30. The heat-conducting component 10 is used to be fixedly connected to the semiconductor process chamber so as to exchange heat with the process kit in the semiconductor process chamber; the cooling channel 20 and the heating component 30 are both arranged in the heat-conducting component 10, wherein the cooling channel 20 is used to pass a cooling fluid to cool the heat-conducting component 10, and the cooling fluid includes, for example, a cooling liquid or a cooling gas. The heating component 30 is used to heat the heat-conducting component 10. The auxiliary temperature control device can cool or heat the heat-conducting component 10 through the cooling channel 20 and the heating component 30, so that a temperature difference is formed between the heat-conducting component 10 and the process kit, thereby achieving heat exchange with the process kit and achieving the purpose of adjusting the temperature of the process kit.

[0071] It should be noted that the process kit in the present application includes a deposition ring 60 and a liner assembly 70, which are arranged in a semiconductor process chamber. The process kit is used to cooperate with a carrier device 50 that is also arranged inside the semiconductor process chamber for placing wafers, thereby dividing the interior of the semiconductor process chamber into a process area and a non-process area, wherein the process area is used to perform semiconductor processes.

[0072] When the temperature of the process kit is too high, a cooling fluid can be introduced into the cooling channel 20 to lower the temperature of the heat-conducting component 10 through the cooling fluid, so that a temperature difference is formed between the heat-conducting component 10 and the process kit. The heat in the process kit will be transferred to the heat-conducting component 10, and the heat-conducting component 10 will transfer the heat to the cooling fluid and take the heat away through the flowing cooling fluid, thereby achieving the purpose of lowering the temperature of the process kit.

[0073] Conversely, when the process kit temperature is too low, the heating assembly 30 can heat the thermally conductive assembly 10, creating a temperature difference between the heated thermally conductive assembly 10 and the process kit. Heat in the thermally conductive assembly 10 is then transferred to the process kit. As the heating assembly 30 continues to heat the thermally conductive assembly 10, heat in the thermally conductive assembly 10 is continuously transferred to the process kit, thereby raising the temperature of the process kit.

[0074] The auxiliary temperature control device provided in the present application, by providing a heat-conducting component 10 and providing a cooling channel 20 and a heating component 30 in the heat-conducting component 10, can adjust the temperature of the heat-conducting component 10 through the cooling channel 20 and the heating component 30, so that heat exchange is performed between the heat-conducting component 10 and the process kit to achieve the purpose of adjusting the temperature of the process kit, thereby preventing the temperature of the process kit from being too high or too low, avoiding affecting the wafer, and improving the product quality of the wafer.

[0075] The auxiliary temperature control device provided in this embodiment is described in detail below with reference to a specific embodiment. In this embodiment, the auxiliary temperature control device is applied to a semiconductor process chamber (e.g., a physical magnetron chamber). Referring to FIG5 , the semiconductor process chamber includes a chamber body 80 and a carrier 50 disposed within the chamber body 80. A process kit is disposed within the chamber body 80. The process kit includes a deposition ring 60 and a liner assembly 70. The auxiliary temperature control device is used to regulate the temperature of the deposition ring 60 and the liner assembly 70.

[0076] Please refer to Figure 5. During the sputtering process in the semiconductor process chamber, the carrier device 50 cooperates with the process kit to divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82. It can be understood that the upper chamber 81 is a space for processing the wafer, that is, the process area. Therefore, in order to avoid contamination of the wafer, the auxiliary temperature control devices are all arranged in the lower chamber 82 (that is, the non-process area).

[0077] As shown in Figure 3, in this embodiment, the heat conduction assembly 10 includes: a first heat conduction member 10a; the cooling channel 20 includes: a first cooling channel 20a; and the heating assembly 30 includes: a first heating member 30a. The first heat conduction member 10a is used to connect to the carrier device 50 and mate with the deposition ring 60 in the process kit to facilitate heat exchange with the deposition ring 60. The first cooling channel 20a and the first heating member 30a are both disposed within the first heat conduction member 10a. By providing the first cooling channel 20a and the first heating member 30a, the first heat conduction member 10a can be cooled or heated, creating a temperature difference between the first heat conduction member 10a and the deposition ring 60, thereby achieving heat exchange with the deposition ring 60.

[0078] During low-power metal film sputtering and high-power aluminum sputtering, the temperature of the deposition ring 60 continues to rise as the process progresses. The elevated temperature of the deposition ring 60 continuously transfers heat to the first heat conductor 10a, where it is then removed by the cooling fluid within the first cooling channel 20a. This lowers the temperature of the deposition ring 60, effectively preventing heat accumulation in the deposition ring 60 and overheating, thereby effectively ensuring the lifespan of the deposition ring 60. Furthermore, this prevents the deposition ring 60 from radiating heat back to the wafer, improving the wafer's process performance. Furthermore, the process temperature remains relatively stable throughout the process, preventing the first wafer effect and ensuring the stability of wafer product quality.

[0079] In addition, during the initial stages of low-power metal film sputtering, the deposition ring 60 can be indirectly heated by the first heating element 30a, allowing the deposition ring 60 to radiate heat toward the wafer, thereby quickly reaching the temperature required for the process. This can also avoid the first-wafer effect and ensure the stability of wafer product quality. During maintenance, the first heating element 30a cooperates with the halogen lamp to rapidly heat the deposition ring 60, allowing the deposition ring 60 to quickly precipitate adsorbed impurities, thereby improving the maintenance and recovery speed and quality of the deposition ring 60. Moreover, when the process is idle, the deposition ring 60 can be continuously heated to prevent the nitride on the deposition ring 60 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and enhancing wafer product quality.

[0080] As shown in Figure 3, in this embodiment, the first heat-conducting member 10a includes: an annular first heat exchange portion 11a and a first connecting portion 12a. The annular first heat exchange portion 11a has a first heat exchange surface 111a for bonding with the deposition ring 60. The first heat exchange surface 111a can be parallel to the bearing surface (the plane for supporting the wafer) of the bearing device 50. A heat-conducting layer is provided on the first heat exchange surface 111a. The first heat exchange surface 111a is bonded to the deposition ring 60 through the heat-conducting layer to improve the efficiency of heat transfer. The first cooling channel 20a and the first heating element 30a are located in the first heat exchange portion 11a. The first cooling channel 20a and the first heating element 30a are both arranged along the circumference of the first heat exchange portion 11a. The first heating element 30a is located between the first heat exchange surface 111a and the first cooling channel 20a. By disposing the first heating element 30a between the first cooling channel 20a and the first heat exchange surface 111a, the first heating element 30a can be brought closer to the deposition ring 60 during heating, reducing heat loss during heat transfer and improving heating efficiency. In this embodiment, the first heating element 30a is, for example, a heating wire.

[0081] As shown in Figure 3, the first connecting portion 12a is connected to the inner circumference of the first heat exchange portion 11a (to the left of the first heat exchange portion 11a in Figure 3). The first connecting portion 12a is used to connect to the carrier device 50. By providing the first connecting portion 12a, the first heat exchange portion 11a is connected and fixed to the carrier device 50 via the first connecting portion 12a, thereby allowing the first heat exchange surface 111a of the first heat exchange portion 11a to mate with the deposition ring 60. In this embodiment, the upper surface of the first connecting portion 12a and the inner circumferential surface of the first portion 11a form an inner annular groove, and the outer circumferential wall of the carrier device 50 is located within the inner annular groove.

[0082] As shown in FIG3 , the first heat exchange portion 11a is further provided with a first annular protrusion 112a and a first annular groove 113a. The first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a (to the right of the first heat exchange surface 111a in FIG3 ), and the first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a. The first annular protrusion 112a and the first annular groove 113a are used to form a labyrinth passage 90 with a clearance fit with the liner assembly 70 (see FIG6 ). By providing the first annular protrusion 112a and the first annular groove 113a and by clearance fit with the liner assembly 70 to form the labyrinth passage 90, contamination of the lower chamber 82 caused by the plasma in the upper chamber 81 diffusing and leaking into the lower chamber 82 through the gap between the first annular groove 113a and the liner assembly 70 can be prevented during the sputtering process.

[0083] In some embodiments, as shown in FIG4 , the heat conducting assembly 10 further includes a second heat conducting member 10 b; the cooling channel 20 further includes a second cooling channel 20 b; and the heating assembly 30 further includes a second heating member 30 b. The second heat conducting member 10 b is configured to be connected to the inner wall of the chamber body 80 and to be in contact with the liner assembly 70 so as to exchange heat with the liner assembly 70. The second cooling channel 20 b and the second heating member 30 b are both disposed within the second heat conducting member 10 b. By disposing the second cooling channel 20 b and the second heating member 30 b, the second heat conducting member 10 b can be cooled or heated, thereby forming a temperature difference between the second heat conducting member 10 b and the liner assembly 70, thereby achieving heat exchange with the liner assembly 70.

[0084] During low-power metal film sputtering and high-power aluminum sputtering, as the process proceeds, the temperature of the lining component 70 continues to rise. After the temperature rises, the lining component 70 will continuously transfer heat to the second heat conductor 10b, and then the heat will be taken away by the cooling fluid in the second cooling channel 20b, thereby reducing the temperature of the lining component 70, effectively preventing heat from accumulating on the lining component 70, preventing the lining component 70 from being too hot, and effectively ensuring the life of the lining component 70. At the same time, it can also prevent the lining component 70 from radiating heat back to the wafer, thereby improving the process performance of the wafer. Moreover, the process temperature can be kept relatively stable during the process, avoiding the first-piece effect and ensuring the stability of the wafer product quality.

[0085] In addition, during the initial stages of low-power metal film sputtering, the liner assembly 70 can be indirectly heated by the second heating element 30b, allowing the liner assembly 70 to radiate heat to the wafer, thereby quickly reaching the temperature required for the process. This can also avoid the first-wafer effect and ensure the stability of wafer product quality. During maintenance, the second heating element 30b cooperates with the halogen lamp to quickly heat the liner assembly 70, allowing the liner assembly 70 to quickly precipitate adsorbed impurities, thereby improving the speed and quality of maintenance and recovery of the liner assembly 70. Moreover, when the process is idle, the liner assembly 70 can be continuously heated to prevent the nitride on the liner assembly 70 from falling off due to low-temperature hardening, thereby avoiding process defects, improving particle control capabilities, and improving wafer product quality.

[0086] As shown in FIG4 , the second heat-conducting member 10b comprises an annular second heat exchange portion 11b and a second connecting portion 12b. The second heat exchange portion 11b comprises a second heat exchange surface 111b for contacting with the liner assembly 70. The second heat exchange surface 111b is parallel to the contact surface of the liner assembly 70. The second heat exchange surface 111b is also provided with a heat-conducting layer, which is contacted with the liner assembly 70 via the heat-conducting layer to improve the efficiency of heat transfer. The second cooling channel 20b and the second heating element 30b are located within the second heat exchange portion 11b. The second cooling channel 20b and the second heating element 30b are both arranged circumferentially, and the second heating element 30b is located between the second heat exchange surface 111b and the second cooling channel 20b. Similarly, by disposing the second heating element 30b between the second cooling channel 20b and the second heat exchange surface 111b, the second heating element 30b can be closer to the liner assembly 70 when heating, reducing heat loss during heat transfer and improving the heating effect. In this embodiment, the second heating element 30b is, for example, a heating wire.

[0087] The second connecting portion 12b is connected to the outer periphery of the second heat exchange portion 11b (the right side in Figure 4 ) and is configured to connect to the inner wall of the chamber body 80. Referring to Figure 6 , the second connecting portion 12b penetrates the inner wall of the chamber body 80 and is fixedly connected, thereby aligning the second heat exchange surface 111b with the liner assembly 70. Furthermore, a sealed connection is formed between the second connecting portion 12b and the inner wall of the chamber body 80, ensuring a vacuum state within the chamber body 80.

[0088] It should be noted that, as can be seen from Figure 6, part of the second connection part 12b has extended to the outside of the chamber body 80. Therefore, the part of the second connection part 12b located outside the chamber body 80 can be grounded, so that the entire second heat-conducting member 10b is at zero potential. Since the chamber body 80 is in direct contact with the second connection part 12b, the inner wall of the chamber body 80 can also be at zero potential at the same time, thereby avoiding the phenomenon of ignition in the lower chamber 82 caused by excessive potential difference between the second heat-conducting member 10b and the inner wall of the chamber body 80.

[0089] In this embodiment, the auxiliary temperature control device further includes a first conductive member 40a and a second conductive member 40b. The first conductive member 40a is electrically connected to the first heat conducting member 10a and the supporting device 50, and the second conductive member 40b is electrically connected to the second heat conducting member 10b and the lining assembly 70.

[0090] Specifically, as shown in Figure 3 , the first end of the first conductive member 40a is connected to the first connecting portion 12a, and the second end of the first conductive member 40a protrudes from the upper surface of the first connecting portion 12a. Referring to Figure 5 , during assembly, the second end of the first conductive member 40a is fixedly connected to the carrier 50, thereby fixing the carrier 50 to the first thermally conductive member 10a via the first conductive member 40a. Furthermore, the first conductive member 40a is made of metal, providing electrical conduction between the first thermally conductive member 10a and the carrier 50.

[0091] The auxiliary temperature control device provided herein utilizes a first conductive member 40a, which secures and electrically connects the first heat-conducting member 10a to the carrier 50. This ensures stable contact between the first heat-conducting member 10a and the deposition ring 60 while also achieving equal potential between the first conductive member 40a and the carrier 50. When the carrier 50 is grounded, the first conductive member 40a is also at zero potential. This prevents a significant potential difference between the first heat-conducting member 10a and the carrier 50, as well as the inner wall of the chamber body 80. This effectively prevents ignition in the lower chamber 82, prevents contamination of the coating in the lower chamber 82, and enhances the stability of the device.

[0092] It is understood that, in order to improve the reliability of the connection, in this embodiment, the first conductive member 40a can be a silver-plated bolt, which can achieve fixation and electrical connection between the first thermal conductive member 10a and the carrier device 50, thereby improving the reliability of the connection between the first thermal conductive member 10a and the carrier device 50. Of course, this is not restrictive, and any component that can simultaneously perform both fixation and electrical connection functions is within the scope of protection of this application.

[0093] As shown in FIG4 , a mounting groove is provided on the second heat exchange surface 111b, and the first end of the second conductive member 40b is located in the mounting groove and fixedly connected to the inner wall of the mounting groove. The second end of the second conductive member 40b protrudes from the second heat exchange surface 111b. Please refer to FIG6 , when the second heat exchange surface 111b is attached to the lining component 70, so that the second end of the second conductive member 40b abuts against the surface of the lining component 70, the second conductive member 40b made of metal material enables electrical conduction between the second conductive member 40b and the lining component 70. Since the second heat conductive member 10b is connected to the inner wall of the chamber body 80, the second heat conductive member 10b and the inner wall of the chamber body 80 are also electrically conductive, thereby enabling electrical conduction between the second heat conductive member 10b, the interior of the chamber body 80 and the lining component 70.

[0094] The auxiliary temperature control device provided herein provides a second conductive member 40b, which is used to electrically connect the second heat-conducting member 10b to the liner assembly 70. This allows the second conductive member 40b, the inner wall of the chamber body 80, and the liner assembly 70 to be at equal potential. After the second heat-conducting member 10b is grounded, the second conductive member 40b, the inner wall of the chamber body 80, and the liner assembly 70 are all at zero potential, effectively preventing a large potential difference between the second conductive member 40b and the liner assembly 70 and the inner wall of the chamber body 80. This prevents ignition in the lower chamber 82 from causing coating contamination and improves the stability of the device. The zero-potential and equal-potential state is unaffected by plasma bombardment and radio frequency leakage.

[0095] It can be understood that the second end of the second conductive member 40b is only slightly higher than the second heat exchange surface 111b to avoid affecting the fit between the second heat exchange surface 111b and the lining assembly 70; in addition, the second heat exchange surface 111b needs to avoid the position of the second conductive member 40b to avoid affecting the electrical conduction effect between the second conductive member 40b and the lining assembly 70.

[0096] In the embodiment shown in Figure 6, a connecting wire (not shown in the figure) is further provided between the first heat conducting member 10a and the second heat conducting member 10b, and the two ends of the connecting wire are respectively connected to the first heat conducting member 10a and the second heat conducting member 10b, thereby achieving electrical conduction between the first heat conducting member 10a and the second heat conducting member 10b. After the first heat conductor 10a and the second heat conductor 10b are electrically connected, the supporting device 50, the first heat conductor 10a, the second heat conductor 10b, the lining assembly 70 and the inner wall of the chamber body 80 are all at the same potential. After the second heat conductor 10b is grounded, the supporting device 50, the first heat conductor 10a, the second heat conductor 10b, the lining assembly 70 and the inner wall of the chamber body 80 in the lower chamber 82 are all at zero potential, which effectively prevents the occurrence of ignition in the lower chamber 82. Therefore, the lower chamber 82 will not be affected by plasma bombardment and leakage radio frequency, thereby avoiding the lower chamber 82 from being contaminated by the coating and improving the stability and life of the equipment.

[0097] As shown in Figure 5, in this embodiment, a refrigerant pipe 110 is further provided between the first heat conducting member 10a and the second heat conducting member 10b. One end of the refrigerant pipe 110 is connected to the first cooling channel 20a, and the second end of the refrigerant pipe 110 is connected to the second cooling channel 20b, so that the first cooling channel 20a and the second cooling channel 20b are connected to each other, so that the first cooling channel 20a and the second cooling channel 20b can share a water inlet pipeline and a water outlet pipeline (not shown in the figure). Similarly, the first heating member 30a and the second heating member 30b can be electrically connected through a wire (not shown in the figure), so that the first heating member 30a and the second heating member 30b share a set of circuits for power supply and control, thereby simplifying the overall structure, reducing the risk of gas leakage inside the chamber body 80, and reducing the modification cost.

[0098] In this embodiment, the auxiliary temperature control device further includes a temperature measuring assembly, which includes, for example, a first temperature measuring element 100a and a second temperature measuring element 100b. The first temperature measuring element 100a is disposed on the first heat-conducting element 10a and is used to detect the temperature of the deposition ring 60. The second temperature measuring element 100b is disposed on the second heat-conducting element 10b and is used to detect the temperature of the liner assembly 70.

[0099] As shown in Figure 3, the first temperature measuring element 100a is embedded in the first heat exchange portion 11a of the first heat conductive element 10a, and one end of the first temperature measuring element 100a extends to the position of the first heat exchange surface 111a, and the heat conductive layer on the first heat exchange surface 111a covers the first temperature measuring element 100a. When the first heat exchange surface 111a is in contact with the deposition ring 60, the first temperature measuring element 100a can also be abutted against the deposition ring 60 through the heat conductive layer to measure the temperature of the deposition ring 60. Moreover, since the heat conductive layer covers the first temperature measuring element 100a, that is, heat is transferred between the first temperature measuring element 100a and the deposition ring 60 through the heat conductive layer, which can make the temperature detected by the first temperature measuring element 100a more accurate and timely.

[0100] Similarly, as shown in Figure 4, the second temperature measuring element 100b is embedded in the second heat exchange portion 11b of the second heat conducting element 10b, one end of the second temperature measuring element 100b extends to the position of the second heat exchange surface 111b, and the heat conductive layer on the second heat exchange surface 111b covers the second temperature measuring element 100b. When the second heat exchange surface 111b is in contact with the lining component 70, the second temperature measuring element 100b can also be abutted against the lining component 70 through the heat conductive layer to measure the temperature of the lining component 70. Moreover, since the heat conductive layer covers the second temperature measuring element 100b, that is, heat is transferred between the second temperature measuring element 100b and the lining component 70 through the heat conductive layer, which can make the temperature detected by the second temperature measuring element 100b more accurate and timely.

[0101] The auxiliary temperature control device provided by the present application can monitor the temperature of the deposition ring 60 and the liner assembly 70 in real time by setting a temperature measuring component, and obtain real-time feedback, so that the temperature of the deposition ring 60 and the liner assembly 70 can be actively adjusted according to the feedback temperature, forming a closed-loop temperature regulation, so that the process temperature is within the optimal temperature range, reducing the fluctuation of the process temperature, avoiding the first-piece effect, and ensuring the stability of the wafer product quality. In this embodiment, the first temperature measuring component 100a and the second temperature measuring component 100b are both temperature measuring thermocouples, but this is not restrictive. As long as it is a device that can measure temperature, it is within the scope of protection of this application without violating the working principle and application concept of this application.

[0102] According to a second aspect of the present application, a semiconductor process chamber is also disclosed, comprising: a chamber body 80, a carrier device 50, a process kit and the above-mentioned auxiliary temperature control device.

[0103] 5 , the carrier 50 and the process kit are both disposed within the chamber body 80. The auxiliary temperature control device is fixedly connected to at least one of the chamber body 80 and the carrier 50 to adjust the temperature of the process kit.

[0104] The semiconductor process chamber provided in the present application can adjust the temperature of the process kit by setting an auxiliary temperature control device, preventing the temperature of the process kit from being too high or too low and affecting the quality of the wafer, thereby improving the product quality of the wafer.

[0105] It is understood that in this embodiment, the carrier device 50 is disposed within the chamber body 80 in a manner that allows it to be raised and lowered, and the carrier device 50 can be engaged or disengaged with the liner assembly 70 by being raised and lowered. Referring to FIG5 , during the sputtering process in the semiconductor process chamber, the carrier device 50 rises to a position where it engages with the liner assembly 70. The carrier device 50 and the liner assembly 70 divide the interior of the chamber body 80 into an upper chamber 81 and a lower chamber 82. The upper chamber 81 is a process area for sputtering wafers, and the lower chamber 82 is a non-process area. The auxiliary temperature control device is disposed in the lower chamber 82.

[0106] Referring to Figure 5 , the process kit includes a liner assembly 70 and a deposition ring 60. The liner assembly 70 is connected to the chamber body 80, and the deposition ring 60 is positioned around the carrier 50. After the carrier 50 rises to a position that mates with the liner assembly 70, the deposition ring 60 and the liner assembly 70 are loosely engaged. The auxiliary temperature control device includes a first heat conducting member 10a, which is connected to the carrier 50 and abuts against the deposition ring 60, and a second heat conducting member 10b, which is connected to the inner wall of the chamber body 80 and abuts against the liner assembly 70.

[0107] Specifically, as shown in Figure 6, the deposition ring 60 has an annular mounting portion 61 on its outer periphery. This mounting portion 61 extends outwardly to the outside of the carrier 50, and the first heat conductor 10a is attached to the mounting portion 61. For example, the deposition ring 60 includes a body 62 and an annular mounting portion 61 disposed on the outer periphery of the body 62. The mounting portion 61 extends parallel to the carrier surface to the outside of the carrier 50 and is located between the carrier 50 and the liner assembly 70. The mounting portion 61 has a first side facing the carrier surface and a second side facing away from the carrier surface.

[0108] As shown in Figure 7 , the mounting portion 61 has an annular slope 611 on its first side. The height of the annular slope 611 gradually increases as the deposition ring 60 moves from the inside to the outside (from left to right in Figure 7 ). A second annular protrusion 612 is provided on its second side, located on the outer periphery of the mounting portion 61. The first heat conductor 10a is attached to the second side of the mounting portion 61.

[0109] In some embodiments, as shown in FIG6 , the lining assembly 70 includes a side wall portion 71 and a bottom wall portion 72. The side wall portion 71 is arranged perpendicular to the bearing surface of the bearing device 50; the bottom wall portion 72 is connected to the side wall portion 71 and arranged parallel to the bearing surface. The bottom wall portion 72 is, for example, an annular structure. The inner circumferential wall of the bottom wall portion 72 is loosely matched with the outer side of the assembly portion 61. The outer portion of the bottom wall portion 72 is connected to the side wall portion 71. The second heat conducting member 10 b is attached to the bottom wall portion 72.

[0110] In some embodiments, as shown in FIG7 , the liner assembly 70 further includes a shielding portion 73, which is an annular structure and is connected to the inner circumferential wall of the bottom wall portion 72. The shielding portion 73 is located above the annular inclined surface 611, and the inner surface of the shielding portion 73 facing the annular inclined surface 611 is parallel to the annular inclined surface 611, and a first channel 91 is formed between the inner surface of the shielding portion 73 and the annular inclined surface 611. The inner circumferential wall of the bottom wall portion 72 is parallel to the outer circumferential wall of the assembly portion 61, and a second channel 92 connected to the first channel 91 is formed between the inner circumferential wall of the bottom wall portion 72 and the outer circumferential wall of the assembly portion 61. The connected first channel 91 and second channel 92 together form a portion of the labyrinth channel 90.

[0111] As shown in Figure 6, the first heat-conducting member 10a includes an annular first heat exchange portion 11a and a first connecting portion 12a. As shown in Figure 7, the first heat exchange portion 11a has a first heat exchange surface 111a that is attached to the second side of the mounting portion 61. The first heat exchange portion 11a is also provided with a first annular protrusion 112a and a first annular groove 113a. The first annular protrusion 112a is located on the outer peripheral side of the first heat exchange surface 111a (to the right of the first heat exchange surface 111a in Figure 7), the first annular groove 113a is located between the first heat exchange surface 111a and the first annular protrusion 112a, and the second annular protrusion 612 is located within the first annular groove 113a.

[0112] As shown in Figure 7, a second annular groove 721 is provided on the bottom wall portion 72. After the supporting device 50 rises to a position to cooperate with the lining assembly 70, the first annular protrusion 112a is inserted into the second annular groove 721 and is loosely fitted, so that a third channel 93 connected to the second channel 92 is formed between the outer wall of the first annular protrusion 112a and the inner wall of the second annular groove 721, and between the bottom wall portion 72 and the inner wall of the first annular groove 113a.

[0113] As shown in FIG7 , the connected first channel 91, second channel 92, and third channel 93 together form a labyrinth channel 90, and the upper chamber 81 and the lower chamber 82 are connected through the labyrinth channel 90. During the sputtering process, since the first channel 91 is directly connected to the upper chamber 81 and the entire channel is inclined, the plasma forms a small amount of coating there. Since the second channel 92 is connected to the upper chamber 81 through the first channel 91, the plasma forms a trace amount of coating there. Since the third channel 93 is connected to the upper chamber 81 through the first channel 91 and the second channel 92, the plasma has basically been consumed in the first channel 91 and the second channel 92. Therefore, there is no coating in the third channel 93, which effectively prevents the plasma from continuing to leak downward and sputter into the lower chamber 82, avoiding the risk of leakage and preventing the lower chamber 82 from being contaminated by the coating. At the same time, the labyrinth channel 90 can also guide the ignition gas (usually argon) into the upper chamber 81 for effective ignition. Furthermore, in conventional techniques, the labyrinthine channel structure is mostly formed by the cooperation of the deposition ring 60 and the liner assembly 70, which results in a large cleaning area for the deposition ring 60. However, the present application effectively disassembles the labyrinthine channel structure. Compared with conventional techniques, the uncoated third channel 93 does not require cleaning, effectively reducing the cleaning area of ​​the deposition ring 60, saving cleaning costs, lowering cleaning risks and the probability of cleaning defects, and reducing the risk of scrap due to cleaning.

[0114] As shown in Figure 6, the outer peripheral wall of the supporting device 50 and the surface of the second side of the assembly part 61 form an annular step structure 120, and the upper surface of the first connecting part 12a and the inner peripheral surface of the first heat exchange part 11a constitute an inner annular groove. A part of the annular step structure 120 is located in the inner annular groove, and the first connecting part 12a and the annular step structure 120 are fixed and electrically connected through the first conductive part 40a, thereby ensuring the fit between the first heat exchange surface 111a and the deposition ring 60.

[0115] It can be understood that, as shown in Figure 6, the supporting device 50 includes: a ceramic part 51 for supporting the wafer and a metal part 52 located below the ceramic part 51, and the connection position between the ceramic part 51 and the metal part 52 is located at the position of the annular step structure 120, that is, the part of the annular step structure 120 close to the deposition ring 60 is the ceramic part 51, and the part away from the deposition ring 60 is the metal part 52, and the first conductive member 40a is connected to the metal part 52, thereby achieving reliable and stable fixation and electrical connection.

[0116] The working principle of the semiconductor process chamber according to the embodiment of the present application is described in detail below in combination with specific process conditions:

[0117] During high-power aluminum sputtering, the energy of the plasma increases with increasing power. The higher the power, the stronger the energy and the more heat generated. As shown in FIG8 , the heat generated by the plasma is transferred to the deposition ring 60 along direction 1 and to the liner assembly 70 along direction 2.

[0118] After the deposition ring 60 is heated, heat continues to transfer. Part of the heat on the deposition ring 60 is transferred downward to the first heat conductor 10a along direction 3, and another part of the heat on the deposition ring 60 is also transferred to the bottom wall portion 72 of the lining assembly 70 along direction 4.

[0119] After the lining assembly 70 is heated, part of the heat of the bottom wall portion 72 is transferred along direction 5 to the second heat conducting member 10 b in the lower chamber 82 .

[0120] In the related art, since the heat transfer efficiency in directions 3 and 5 is very low, a large amount of heat will accumulate in the deposition ring 60, the shielding portion 73, and the bottom wall portion 72. However, in the present application, since a first heat conductor 10a is attached to the deposition ring 60 and a second heat conductor 10b is attached to the bottom wall portion 72, the heat transfer efficiency in directions 3 and 5 can be improved. In combination with the first cooling channel 20a and the second cooling channel 20b, the heat is taken away by the cooling fluid in the first cooling channel 20a and the second cooling channel 20b, so that the deposition ring 60, the bottom wall portion 72 and the shielding portion 73 can always maintain a relatively low temperature, thereby preventing the process kit including the deposition ring 60, the liner assembly 70, etc. from being too hot, thereby increasing the service life of the process kit and, at the same time, avoiding the process kit from radiating heat back to the wafer, thereby improving the process performance of the wafer.

[0121] As shown in FIG9 , during the sputtering process of titanium, tantalum and other processes, the temperature of the deposition ring 60 and the liner assembly 70 is insufficient (has not reached the optimal process temperature range) due to the low DC sputtering power at the initial stage of the process. Therefore, the heat transfer along directions 1, 2 and 4 is slow, and the temperature of the deposition ring 60, the shielding portion 73 and the bottom wall portion 72 has not risen to the required optimal process temperature. Therefore, in FIG9 , the deposition ring 60 transfers less heat along the reverse direction 1 and the reverse direction 2, and the shielding portion 73 and the bottom wall portion 72 transfer less heat along the reverse direction 1 and the reverse direction 2.

[0122] The process chamber of the present application can actively heat the deposition ring 60 and the lining assembly 70 respectively through the first heating element 30a and the second heating element 30b. The first heat conductor 10a transfers heat along direction 3, and the second heat conductor 10b transfers heat along direction 5, so that the deposition ring 60 and the lining assembly 70 quickly reach the required process temperature, and then heat the wafer along the reverse direction 1 and the reverse direction 2.

[0123] It is not difficult to see that when the process is idle, the first heating element 30a and the second heating element 30b can also be used to heat the deposition ring 60 and the liner assembly 70 to maintain a certain temperature to avoid the first-sheet effect and the risk of film falling off.

[0124] In addition, during the maintenance of the process kit, the deposition ring 60 and the lining assembly 70 are maintained and baked through the full power output of the first heating element 30a and the second heating element 30b, so that the deposition ring 60 and the lining assembly 70 quickly reach the highest temperature, stimulate the impurities adsorbed inside, and achieve the purpose of quickly and thoroughly removing impurities. The baking temperature of the deposition ring 60 and the lining assembly 70 can also be measured and evaluated by the first temperature measuring element 100a and the second temperature measuring element 100b to evaluate the baking and impurity removal effects.

[0125] It should also be noted that, in this embodiment, the heat-conducting assembly 10 includes a first heat-conducting member 10a and a second heat-conducting member 10b. However, this is not restrictive. In some other embodiments not shown in the figures, an auxiliary temperature control device is also disclosed, and its structure is basically the same as that of the auxiliary temperature control device in the above embodiment. The difference is that, in these other embodiments, the heat-conducting assembly 10 only includes one of the first heat-conducting member 10a or the second heat-conducting member 10b. Accordingly, in the semiconductor process chamber, only the first heat-conducting member 10a is provided on the deposition ring 60 or only the second heat-conducting member 10b is provided on the liner assembly 70. The above structure can also achieve temperature regulation of the deposition ring 60 or the liner assembly 70. Therefore, without violating the working principle and application concept of this application, the above embodiment is also within the scope of protection of this application.

[0126] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. An auxiliary temperature control device for a semiconductor process chamber, characterized in that: include: a heat conducting component, configured to be fixedly connected to the semiconductor process chamber so as to perform heat exchange with the process kit in the semiconductor process chamber; A cooling channel is provided in the heat conducting component, and is used to pass a cooling fluid through the cooling channel to cool the heat conducting component; The heating component is arranged in the heat-conducting component and is used for heating the heat-conducting component.

2. The auxiliary temperature control device according to claim 1, characterized in that: The heat conducting component comprises: a first heat conducting member, configured to be connected to a carrier of the semiconductor process chamber to exchange heat with a deposition ring in the process kit; The cooling channel comprises: a first cooling channel, disposed in the first heat conducting member; The heating assembly comprises: The first heating element is arranged in the first heat conducting element.

3. The auxiliary temperature control device according to claim 1 or 2, characterized in that: The heat conducting component comprises: a second heat conducting member, configured to be connected to an inner wall of a chamber body of the semiconductor process chamber to perform heat exchange with a liner assembly in the process kit; The cooling channel comprises: a second cooling channel, disposed in the second heat conducting member; The heating assembly comprises: The second heating element is arranged in the second heat conducting element.

4. The auxiliary temperature control device according to claim 2, characterized in that: The first heat conducting member comprises: a first heat exchange portion having a first heat exchange surface for contacting with the deposition ring; The first connecting portion is connected to the inner circumference of the first heat exchange portion, and the first connecting portion is used to be connected to the supporting device.

5. The auxiliary temperature control device according to claim 4, characterized in that: A first annular protrusion and a first annular groove are provided on the first heat exchange part, the first annular protrusion is located on the outer peripheral side of the first heat exchange surface, and the first annular groove is located between the first heat exchange surface and the first annular protrusion. The first annular protrusion and the first annular groove are used to cooperate with the inner lining component of the semiconductor process chamber to form a maze channel.

6. The auxiliary temperature control device according to claim 3, characterized in that: The second heat conductor has a second heat exchange portion and a second connecting portion, the second heat exchange portion has a second heat exchange surface for fitting with the lining assembly, the second connecting portion is connected to the outer peripheral side of the second heat exchange portion, and the second connecting portion is used to connect to the inner wall of the chamber body.

7. The auxiliary temperature control device according to claim 2, characterized in that: The auxiliary temperature control device also includes: The first conductive member is used to be electrically connected to the first heat conductive member and the supporting device respectively.

8. The auxiliary temperature control device according to claim 3, characterized in that: The auxiliary temperature control device also includes: The second conductive member is used to be electrically connected to the second heat conductive member and the lining assembly respectively.

9. The auxiliary temperature control device according to claim 8, characterized in that: The auxiliary temperature control device also includes a connecting wire, The connecting wires are electrically connected to the first heat conductor and the second heat conductor respectively, and the second heat conductor is also used to electrically connect to the inner wall of the chamber body, so that the supporting device, the first heat conductor, the second heat conductor, the lining assembly and the inner wall of the chamber body are electrically connected to each other.

10. The auxiliary temperature control device according to claim 1, characterized in that: The auxiliary temperature control device also includes: The temperature measuring component is arranged on the heat conducting component to detect the temperature of the process kit.

11. A semiconductor process chamber, characterized in that: include: chamber body; a carrying device and a process kit disposed within the chamber body; The auxiliary temperature control device according to any one of claims 1 to 10, wherein the auxiliary temperature control device is fixedly connected to at least one of the chamber body and / or the carrier device to adjust the temperature of the process kit.

12. The semiconductor process chamber according to claim 11, wherein: The process kit includes: a liner assembly and a deposition ring, wherein the liner assembly is connected to the chamber body, and the deposition ring is arranged around the carrier device; The auxiliary temperature control device includes: a first heat conductive member and / or a second heat conductive member, the first heat conductive member is connected to the supporting device, and the first heat conductive member is in contact with the deposition ring; the second heat conductive member is connected to the inner wall of the chamber body, and the second heat conductive member is in contact with the lining assembly.

13. The semiconductor process chamber according to claim 12, wherein: The outer circumference of the deposition ring is provided with an assembly portion, the assembly portion extending to the outside of the carrying device, and the first heat conducting member is attached to the assembly portion.

14. The semiconductor process chamber according to claim 12, wherein: The lining assembly comprises: A side wall portion is provided in a direction perpendicular to the bearing surface of the bearing device; The bottom wall portion is connected to the side wall portion, and the second heat conducting member is attached to the bottom wall portion.

15. The semiconductor process chamber according to claim 14, wherein: The outer circumference of the deposition ring has a mounting portion, the mounting portion extends to the outside of the carrying device, and the mounting portion has a first side facing the carrying surface and a second side facing away from the carrying surface; An annular slope is provided on a first side of the assembly portion, and a height of the annular slope gradually increases from the inside to the outside of the deposition ring; The liner assembly further comprises: The shielding portion is connected to the inner peripheral wall of the bottom wall portion and is located above the annular inclined surface.

16. The semiconductor process chamber according to claim 15, wherein: A first channel is formed between the inner surface of the shielding portion facing the annular slope and the annular slope; a second channel communicating with the first channel is formed between the inner peripheral wall of the bottom wall and the outer peripheral wall of the assembly portion; The first channel and the second channel together form a portion of a labyrinthine channel.

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