Wiring substrate and manufacturing method therefor, backplane, and display apparatus

Abstract

A wiring substrate (100). The wiring substrate (100) comprises: a base (10), and a plurality of connecting lines (012) located on the base (10), wherein the base (10) comprises a first main surface (11) and a second main surface (12) arranged opposite each other in the direction of thickness of the base (10), and a side face (13) located between the first main surface (11) and the second main surface (12), the side face (13) comprising a set side face (13A). The plurality of connecting lines (012) are located on the base (10), and the connecting lines (012) extend from the first main surface (11) to the second main surface (12) through the set side face (13A). Any one of the plurality of connecting lines (012) comprises: a first surface (Q1) and a second surface (Q2) arranged opposite each other, the first surface (Q1) being closer to the base (10) than the second surface (Q2), and the area of the first surface (Q1) being greater than that of the second surface (Q2).

Description

Wiring substrate and manufacturing method thereof, backplane, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a wiring substrate and a manufacturing method thereof, a backplane, and a display device. Background Art

[0002] Mini LED (Mini Organic Light-Emitting Diode) / Micro LED (Micro Organic Light-Emitting Diode) display devices have the advantages of high brightness, clear display and low power consumption, and have good application prospects.

[0003] Summary of the Invention

[0004] In one aspect, a wiring substrate is provided, comprising a substrate and a plurality of connecting wires located on the substrate. The substrate comprises a first main surface and a second main surface disposed opposite each other in the thickness direction of the substrate, and a side surface located between the first main surface and the second main surface, wherein the side surface comprises a predetermined side surface. The plurality of connecting wires are located on the substrate, and the connecting wires extend from the first main surface through the predetermined side surface to the second main surface. Any one of the plurality of connecting wires comprises a first surface and a second surface disposed opposite each other, wherein the first surface is closer to the substrate than the second surface, and the area of ​​the first surface is larger than the area of ​​the second surface.

[0005] In some embodiments, any one of the multiple connecting lines has multiple cross-sections on a plane parallel to the substrate, and the cross-sectional area of ​​any two of the multiple cross-sections that are relatively closer to the substrate is smaller than the cross-sectional area that is relatively farther away from the substrate.

[0006] In some embodiments, the cross-sectional shape of any one of the plurality of connecting lines on a plane perpendicular to its own extending direction is a trapezoid.

[0007] In some embodiments, along the line width direction of the connecting line, the connecting line includes two first side surfaces disposed opposite each other, the first side surfaces being configured to connect the first surface and the second surface. An orthographic projection of the first side surfaces onto the substrate, along the line width direction of the connecting line, has a length ranging from 6 μm to 25 μm.

[0008] In some embodiments, any one of the plurality of connecting lines includes: a first line segment, a second line segment, and a third line segment connected in sequence; the first line segment is located on the first main surface, the second line segment is located on the set side surface, and the third line segment is located on the second main surface. The second main surface has a fan-out area, and the length of the fan-out area ranges from 3 mm to 20 mm along the direction perpendicular to the arrangement of the plurality of connecting lines. The third line segment includes a fan-out portion located in the fan-out area, and the fan-out portion gradually approaches the first central axis of the wiring substrate from one end close to the second line segment to the end away from the second line segment, and the first central axis is perpendicular to the arrangement direction of the plurality of connecting lines.

[0009] In some embodiments, the length of the first line segment ranges from 0.15 mm to 0.4 mm.

[0010] In some embodiments, the second main surface further has a lead-out area, which is located on a side of the fan-out area close to the set side surface. The third line segment also includes a lead-out portion located in the lead-out area, and the lead-out portion is used to connect the second line segment and the fan-out portion. The length of the lead-out portion ranges from 0.06 mm to 1 mm.

[0011] In some embodiments, in any one of the plurality of connecting lines, the extending direction of the lead portion, the extending direction of the first line segment, and the extending direction of the second line segment connected in sequence are located in the same plane. Furthermore, the plane is perpendicular to the set side surface.

[0012] In some embodiments, the ratio of the thickness of the first line segment to the thickness of the second line segment is in the range of 0.3 to 0.8; and / or the ratio of the thickness of the third line segment to the thickness of the second line segment is in the range of 0.3 to 0.8.

[0013] In some embodiments, the thickness of the second line segment ranges from 0.9 μm to 5 μm, the thickness of the first line segment ranges from 0.6 μm to 2 μm, and / or the thickness of the third line segment ranges from 0.6 μm to 2 μm.

[0014] In some embodiments, the wiring substrate further includes a plurality of first electrodes, wherein the first electrodes are located on the first main surface close to the set side surface, and the first electrodes are electrically connected to the first line segment of the connecting line.

[0015] On the other hand, a mask assembly is provided. The mask assembly is used to produce multiple connecting lines in the wiring substrate described in any of the above embodiments. The mask assembly includes a carrier film and an organic photosensitive material layer located on the carrier film. The organic photosensitive material layer includes multiple hollow areas, and any one of the multiple hollow areas has multiple cross-sections on a plane parallel to the carrier film. The cross-sectional area of ​​the multiple cross-sections closest to the carrier film is smaller than the cross-sectional area of ​​the multiple cross-sections farthest from the carrier film. In the extension direction of any one of the hollow areas, the hollow area includes a first hollow portion, a second hollow portion, and a third hollow portion that are connected in sequence. The third hollow portion in any one of the hollow areas gradually approaches the second central axis of the mask assembly from the side close to the second hollow portion to the side farthest from the second hollow portion. The second central axis is perpendicular to the arrangement direction of the multiple hollow areas.

[0016] In some embodiments, any one of the plurality of hollow areas has a plurality of cross sections on a plane parallel to the carrier film, and any two of the plurality of cross sections have a cross-sectional area that is relatively closer to the carrier film and smaller than a cross-sectional area that is relatively farther from the carrier film.

[0017] In some embodiments, the cross-sectional shape of any one of the plurality of hollow areas on a plane perpendicular to its own extension direction is trapezoidal.

[0018] In some embodiments, the organic photosensitive material layer further includes a first photosensitive portion along the direction in which the plurality of hollow regions are arranged, wherein the first photosensitive portion separates two adjacent hollow regions. Along the direction in which the plurality of hollow regions are arranged, the first photosensitive portion includes two second side surfaces, wherein the second side surfaces intersect with the carrier film to form a first angle, wherein the first angle ranges from 40° to 80°.

[0019] In some embodiments, a projection length of the orthographic projection of the second side surface on the carrier film in a direction along which the plurality of hollow regions are arranged ranges from 6 μm to 25 μm.

[0020] In some embodiments, the thickness of the organic photosensitive material layer ranges from 25 μm to 50 μm.

[0021] In some embodiments, in the extension direction of any hollow area, there is a first distance between the hollow area and the edge of the organic photosensitive material layer, and the length of the first distance is greater than or equal to 2 mm.

[0022] In another aspect, a backplane is provided. The backplane includes a plurality of functional elements, at least one circuit board, and a wiring substrate as described in any of the above embodiments. One end of a connecting wire in the wiring substrate is connected to the functional element, and the other end of the connecting wire is connected to the circuit board.

[0023] In another aspect, a display device is provided. The display device includes a backlight module and a liquid crystal display panel, wherein the liquid crystal display panel is located on the light-emitting side of the backlight module. The backlight module includes the backplane described above, and the functional element includes a light-emitting diode.

[0024] In another aspect, a display device is provided, comprising: the backplane according to any one of the above embodiments, wherein the functional element comprises a light emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and do not limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, etc. involved in the embodiments of the present disclosure.

[0026] FIG1 is a schematic plan view of a display device according to some embodiments;

[0027] FIG2 is a structural diagram of a display device according to some embodiments;

[0028] FIG3 is a structural diagram of a display device according to some other embodiments;

[0029] FIG4 is a schematic plan view of the front side of a backplane according to some possible implementations;

[0030] FIG5 is a schematic plan view of the back side of a back plate according to some possible implementations;

[0031] FIG6 is a partial cross-sectional view of a back plate according to some possible implementations;

[0032] FIG7 is a schematic plan view of the front side of a wiring substrate according to some embodiments;

[0033] FIG8 is a schematic plan view of the back side of a wiring substrate according to some embodiments;

[0034] FIG9 is a side view of a wiring substrate provided according to some embodiments;

[0035] FIG10 is a cross-sectional view taken along the line CC' in FIG8;

[0036] FIG11 is a partial schematic plan view of the front surface of a wiring substrate according to some embodiments;

[0037] FIG12 is a partial schematic plan view of the front surface of a wiring substrate according to some other embodiments;

[0038] FIG13 is a partial diagram of a connection line according to some embodiments;

[0039] FIG14 is a partial diagram of connection lines according to some other embodiments;

[0040] FIG15 is a partial diagram of connection lines according to yet other embodiments;

[0041] FIG16 is a partial diagram of connection lines according to yet other embodiments;

[0042] FIG17 is a partial diagram of connection lines according to yet other embodiments;

[0043] FIG18 is a partial diagram of connection lines according to yet other embodiments;

[0044] FIG19 is a cross-sectional view of a wiring substrate according to some embodiments;

[0045] FIG20 is a structural diagram of a mask assembly according to some embodiments;

[0046] FIG21 is a cross-sectional view taken along line V-V' in FIG20;

[0047] FIG22 is a flow chart of a method for manufacturing a wiring substrate according to some embodiments;

[0048] FIG23 is a structural diagram corresponding to step S2 in FIG22 ;

[0049] FIG24 is another structural diagram corresponding to step S2 in FIG22 ;

[0050] FIG25 is another structural diagram corresponding to step S2 in FIG22 ;

[0051] FIG26 is another structural diagram corresponding to step S2 in FIG22 ;

[0052] FIG27 is a structural diagram corresponding to step S3 in FIG22 ;

[0053] FIG28 is another structural diagram corresponding to step S3 in FIG22 ;

[0054] FIG. 29 is another structural diagram corresponding to step S3 in FIG. 22 . DETAILED DESCRIPTION

[0055] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0056] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0057] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0058] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0059] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0060] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0061] As used herein, the term "if" is optionally interpreted to mean "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrases "if it is determined that" or "if [stated condition or event] is detected" are optionally interpreted to mean "upon determining" or "in response to determining" or "upon detecting [stated condition or event]" or "in response to detecting [stated condition or event]," depending on the context.

[0062] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0063] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0064] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0065] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0066] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0067] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0068] FIG. 1 is a schematic plan view of a display device according to some embodiments.

[0069] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device 1000 .

[0070] Exemplarily, the display device 1000 can be any display device that displays images, whether in motion (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is expected that the display device of the embodiments described can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0071] Exemplarily, the display device 1000 may be a liquid crystal display device (LCD), a Mini LED (Mini Light-Emitting Diode, Mini LED) display device, or a Micro LED (Micro Light-Emitting Diode, Micro LED) display device.

[0072] FIG. 2 is a structural diagram of a display device according to some embodiments.

[0073] As shown in FIG2 , when the display device 1000 is a liquid crystal display device, in some embodiments, the display device 1000 includes a backlight module 300 and a liquid crystal display panel 200. The liquid crystal display panel 200 is located on the light-emitting side of the backlight module 300. The backlight module 300 is used to provide light for the liquid crystal display panel 200, so that the liquid crystal display panel 200 can display images.

[0074] The main structure of the liquid crystal display panel 200 includes an array substrate 210, a cell substrate 220, and a liquid crystal layer 230 disposed between the array substrate 210 and the cell substrate 220. In some examples, the cell substrate 220 may be a color filter substrate (CF).

[0075] As shown in FIG2 , in some embodiments, the backlight module 300 includes a back plate 310. The back plate 310 is used to provide light to the liquid crystal display panel so that the liquid crystal display panel can display images.

[0076] As can be understood, light can be emitted through the backlight module 300 and illuminate the liquid crystal layer 230. By adjusting the arrangement of the liquid crystal molecules in the liquid crystal layer 230, the intensity of light passing through the liquid crystal layer 230 can be adjusted, thereby adjusting the intensity of light irradiating the cell substrate 220. Since the cell substrate 220 is a color filter substrate, by adjusting the intensity of light irradiating the different color photoresist units, the display device 1000 can display color images.

[0077] In some examples, the backlight module in the display device 1000 may further include an optical film, which is located on the side of the back plate 310 close to the liquid crystal display panel. The optical film may include a reflective sheet, a diffuser, a brightness enhancement film (prism sheet), a diffuser, etc., and may be used to improve the brightness and uniformity of light.

[0078] FIG3 is a structural diagram of a display device according to some other embodiments.

[0079] As shown in FIG3 , when the display device 1000 is a Mini LED display device and a Micro LED display device, in some embodiments, the display device 1000 includes a display panel, and the display panel includes at least one back panel 310 , and the back panel 310 can realize image display.

[0080] The difference between the display device 1000 shown in Figure 3 and the display device 1000 shown in Figure 2 is that: the display device 1000 shown in Figure 3 does not need to set a backlight module, and can directly use the backplane 310 in the display panel to emit at least one of red light, green light and blue light, so that the display device 1000 can achieve color display.

[0081] In some examples, the display device 1000 may include a plurality of back panels 310 , which are spliced ​​together to form the display device 1000 . Alternatively, the display device 1000 may include a single back panel 310 .

[0082] In some examples, the display device 1000 may further include an anti-reflection film layer and a protective cover plate, with the anti-reflection film layer positioned between the wiring substrate 100 and the protective cover plate. The anti-reflection film layer may include a polarizer, which may be a circular polarizer. The polarizer can reduce external light emission, preventing the wiring substrate 100 from reflecting ambient light and causing glare.

[0083] FIG4 is a schematic plan view of the front side of a backplane according to some possible implementations, FIG5 is a schematic plan view of the back side of a backplane according to some possible implementations, and FIG6 is a partial cross-sectional view of a backplane according to some possible implementations. FIG4 is a schematic plan view of the first major surface 11 side of the substrate 10 in the backplane 310, and FIG5 is a schematic plan view of the second major surface 12 side of the substrate 10 in the backplane 310.

[0084] As shown in Figures 4 to 6 , some embodiments of the present disclosure provide a backplane 310 comprising an active area (AA) and a peripheral area (SA). The peripheral area (SA) is located on at least one side (e.g., one side; or, for example, all four sides, i.e., including the upper and lower sides and the left and right sides) of the active area (AA).

[0085] The backplane 310 includes a wiring substrate 100, multiple functional elements Q, and at least one circuit board W. The multiple functional elements Q and the at least one circuit board W are electrically connected to the wiring substrate 100. The wiring substrate 100 is provided with multiple connecting wires, and the multiple functional elements Q and the circuit board W can be electrically connected via conductive wires 110.

[0086] Exemplarily, one end of at least one connecting line in the wiring substrate 100 is electrically connected to the functional element Q, and the other end of the same connecting line is electrically connected to the circuit board W, so as to realize electrical connection between the functional element Q and the circuit board W.

[0087] It should be noted that, in addition to the functional element Q and the circuit board W, the backplane 310 may also include other electronic components (not shown in the figure), such as sensor chips, capacitors, resistors, inductors, etc.

[0088] In some examples, the functional element Q may be a light emitting diode. The main functional area AA includes a plurality of light emitting diodes, which are located on the first main surface of the substrate of the wiring substrate 100 .

[0089] Exemplarily, the light-emitting diode may be a micro light-emitting diode (Micro Light-Emitting Diode, referred to as Micro LED) or a mini light-emitting diode (Mini Light-Emitting Diode, referred to as Mini LED), etc.

[0090] When display device 1000 is a liquid crystal display (LCD), in some examples, wiring substrate 100 serves as a backlight source for display device 1000, providing light for the LCD. Each LED can be independently controlled; this allows the display device to implement local dimming, achieving a high-dynamic range (HDR) effect and improving the display quality of display device 1000.

[0091] When the display device 1000 is a Mini LED display device or a Micro LED display device, in some examples, a light-emitting diode (eg, Micro LED, Mini LED, etc.) may emit light to directly display a pattern.

[0092] For example, the light emitting diodes can be light emitting elements that can emit light of the same color, for example, they can all be blue LEDs, red LEDs, green LEDs, or yellow LEDs. In this way, the display device 1000 can be a monochrome display device, which can be a display device such as an instrument dial, a signal indicator screen, etc.

[0093] For example, the LEDs may include LEDs of multiple different colors, such as at least two of red, green, blue, and yellow LEDs, and the LEDs of different colors may be independently controlled. Thus, the display device 1000 may perform color display by mixing light.

[0094] In some examples, as shown in Figure 4, the plurality of light emitting diodes on the wiring substrate 100 are arranged in multiple rows and columns. For the convenience of description, the disclosure describes the plurality of light emitting diodes as being arranged in a matrix as an example.

[0095] For example, the plurality of LEDs on the wiring substrate 100 are arranged in an array with equal spacing along a first direction (row direction) X and a second direction (column direction) Y. This arrangement can improve the uniformity of the distribution of the LEDs on the wiring substrate 100.

[0096] In some examples, the first direction X and the second direction Y may be approximately perpendicular, and in this case, the angle between the first direction X and the second direction Y is approximately 90°. For example, the angle between the first direction X and the second direction Y may be 85°, 90°, or 95°.

[0097] In some examples, the circuit board W may be an integrated circuit (IC), which may be used to provide a signal to the functional element Q to drive the functional element Q.

[0098] In some implementations, as shown in Figures 4 to 6, the wiring substrate 100 in the backplane 310 includes a substrate 10, and the substrate 10 includes a first main surface 11 and a second main surface 12 that are relatively arranged in the thickness direction (third direction) Z of the substrate 10, and a side surface 13 located between the first main surface 11 and the second main surface 12. The side surface 13 is used to connect to the first main surface 11 and the second main surface 12. Among them, the multiple side surfaces 13 include a set side surface 13A corresponding to the peripheral area SA. It should be noted that the "set side surface S31" refers to the side surface 13 corresponding to the peripheral area SA among the multiple side surfaces 13 of the substrate 10.

[0099] The thickness direction (third direction) Z of the substrate 10 is perpendicular to the first direction X, and the thickness direction (third direction) Z of the substrate 10 is perpendicular to the second direction Y.

[0100] The wiring substrate 100 in the backplane 310 includes a plurality of fan-out lines 013 , a plurality of connection lines 012 , a plurality of first connection electrodes 021 , a plurality of second connection electrodes 022 , and a plurality of connection pads 023 .

[0101] The plurality of first connection electrodes 021 are located on a side of the first main surface 11 of the substrate 10 away from the second main surface 12 , and the plurality of first connection electrodes 021 are located in the peripheral area SA.

[0102] Multiple fan-out lines 013 are located on the side of the second main surface 12 of the substrate 10 away from the first main surface 11, and the multiple fan-out lines 013 are arranged at intervals along the first direction X; and in the first direction X, the total length occupied by the end of all fan-out lines 013 closest to the set side surface 13A is greater than the total length occupied by the end of all fan-out lines 013 farthest from the set side surface 13A, wherein the total length occupied by the end of all fan-out lines 013 farthest from the set side surface 13A is adapted to the length of the circuit board W, so as to facilitate electrical connection between the fan-out lines 013 and the gold finger structure of the circuit board W in the backplane 310.

[0103] The plurality of second connection electrodes 022 are located on a side of the second main surface 12 of the substrate 10 away from the first main surface 11 . The second connection electrodes 022 are located on a side of the fan-out line 013 away from the set side surface 13A.

[0104] A plurality of connection pads 023 are located on a side of the second main surface 12 of the substrate 10 facing away from the first main surface 11 , and the connection pads 023 are located on a side of the fan-out line 013 close to the set side surface 13A.

[0105] A plurality of connection lines 012 extend from the first major surface 11 through the designated side surface 13A to the second major surface 12. For each of the plurality of connection lines 012, one end located on the first major surface 11 can be electrically connected to the first connection electrode 021 located on the first major surface 11, and one end located on the second major surface 12 can be electrically connected to the connection pad 023 located on the second major surface 12.

[0106] Thus, the first connection electrode 021 located on the first main surface 11 and the fan-out line 013 located on the second main surface 12 can be electrically connected by the connection line 012. Since the first connection electrode 021 can be used to electrically connect to the functional element Q in the main functional area AA of the wiring substrate 100, the fan-out line 013 can be electrically connected to the circuit board W located on the side of the second main surface 12 of the substrate 10 facing away from the first main surface 11 through the second connection electrode 022.

[0107] As shown in the above structure, the backplane 310 can be provided with the circuit board W on the second main surface 12 of the substrate 10. In other words, the bonding area of ​​the backplane 310 can be provided on the second main surface 12 of the substrate 10. The circuit board W can transmit signals to the functional element Q located in the main functional area AA of the wiring substrate 100 via the second connection electrode 022, the fan-out line 013, the connection pad 023, the connection line 012, and the first connection electrode 021, thereby controlling the backplane 310 to perform display.

[0108] Moreover, since the circuit board W is arranged on the second main surface 12 of the substrate 10, when the back panel 310 is subjected to the binding process, there is no need to perform a bending binding process at the edge of the back panel 310, which is conducive to achieving a narrow frame of the back panel 310 and can be widely used in splicing application products.

[0109] In some examples, as shown in FIG6 , the backplane 310 further includes a protective layer 03 , which is an insulating material. The protective layer 03 is located on the side of the multiple connecting wires 012 facing away from the substrate 10 , so that the protective layer 03 covers the multiple connecting wires 012 , thereby fixing and protecting the multiple connecting wires 012 and preventing the connecting wires 012 from cracking or falling off.

[0110] However, the inventors discovered that when manufacturing the above-mentioned backplane 310, it is necessary to form a plurality of first connecting electrodes 021 in the peripheral area SA of the first main surface 11 of the substrate 10 in the wiring substrate 100, and to form a plurality of fan-out lines 013, a plurality of second connecting electrodes 022, and a plurality of connecting pads 023 on the second main surface 12 of the substrate 10. In addition, it is also necessary to form connecting lines 012 for connecting the first connecting electrodes 021 and the connecting pads 023. In other words, it is necessary to design and manufacture wiring for both the first main surface 11 and the second main surface 12 of the substrate 10 in the wiring substrate 100, which is relatively complicated. Moreover, after completing the electrical structure on one main surface of the substrate 10, it is necessary to flip it over and manufacture the electrical structure on the other main surface. However, when the wiring substrate 100 is flipped over, the circuits on the opposite surface are easily scratched. This, in turn, leads to the problem of low process yield and high cost of the wiring substrate 100 in the backplane 310.

[0111] Figure 7 is a schematic plan view of the front side of a wiring substrate provided according to some embodiments, Figure 8 is a schematic plan view of the back side of a wiring substrate provided according to some embodiments, Figure 9 is a side view of a wiring substrate provided according to some embodiments, and Figure 10 is a cross-sectional view taken along the line C-C' in Figure 8. Figure 7 is a schematic plan view of the first major surface 11 of the substrate 10 in the wiring substrate 100, and Figure 8 is a schematic plan view of the second major surface 12 of the substrate 10 in the wiring substrate 100.

[0112] Based on this, some embodiments of the present disclosure provide a wiring substrate 100, as shown in Figures 7 to 10. The wiring substrate 100 includes an active area (AA, also referred to as an effective active area) AA and a peripheral area SA. The peripheral area SA is located on at least one side (e.g., one side; or, for example, all four sides, i.e., including the upper and lower sides and the left and right sides) of the active area AA.

[0113] The wiring substrate 100 includes a substrate 10 and a plurality of connection lines 20 arranged along a first direction X on the substrate 10 .

[0114] In some examples, the substrate 10 may be a flexible substrate. For example, the material of the substrate 10 may be an organic material. For example, the material of the substrate 10 may be any one of polyimide (PI), polycarbonate (PC), or polyvinyl chloride (PVC).

[0115] In other examples, the substrate 10 may be a rigid substrate, for example, a glass substrate or a PMMA (Polymethyl methacrylate) substrate.

[0116] A plurality of connecting wires 20 are disposed on substrate 10. Connecting wires 20 extend from first major surface 11 through designated side surfaces 13A to second major surface 12. Portions of connecting wires 20 formed on first major surface 11 are located in peripheral area SA. This arrangement allows connecting wires 20 to electrically connect devices located on first major surface 11 of substrate 10 to devices located on second major surface 12 of substrate 10.

[0117] The portions of the connection line 20 located on different surfaces of the substrate 10 are arranged in the same layer. That is, the connection line 20 is an integral structure rather than being formed by connecting multiple lines.

[0118] It should be noted that "same layer" refers to a layer structure formed by using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0119] Along the third direction Z, the minimum distance between the first surface Q1 of the connecting wire 20 and the second surface Q2 of the connecting wire 20 is greater than the minimum distance between the first side surface Q3 of the connecting wire 20 and the first surface Q1 of the connecting wire 20. Based on this, the thickness of the connecting wire 20 on both sides of its line width direction can be made thinner. The structure of the connecting wire 20 described above can meet the requirement of forming multiple connecting wires 20 extending from the first main surface 11 through the designated side surface 13A to the second main surface 12 using a single film formation process.

[0120] Because the connecting wires 20 in this embodiment can be formed using a single film-forming process, compared to the wiring substrates shown in Figures 4 to 6 , there is no need to design and fabricate wiring for both the first main surface 11 and the second main surface 12 of the substrate 10 in the wiring substrate 100. This reduces the reliability issues associated with designing and fabricating wiring for both surfaces of the wiring substrate 100, thereby improving the quality of the wiring substrate 100. Furthermore, the simple structure of the wiring substrate 100 helps reduce the cost of the wiring substrate 100 and facilitates mass production.

[0121] In some examples, the connecting wire 20 may have a laminated structure, which can ensure that the connecting wire has both good electrical conductivity and a longer service life.

[0122] The stacked structure includes a buffer layer, a main conductive layer and a protective layer, and the main conductive layer is located between the protective layer and the buffer layer.

[0123] The main conductive layer in the stacked structure can be made of copper, aluminum, molybdenum, etc. Considering that copper has lower resistance in practical applications, the main conductive layer can be made of copper.

[0124] The buffer layer and the protective layer in the laminated structure may be made of inert metals or other alloy materials, such as molybdenum, titanium, nickel-chromium alloys, etc.

[0125] For example, the stacked structure may be Ti / Al / Ti, Ti / Cu / Ti, Mo / Cu / Mo, or MoNb / Cu / MoNb, but the embodiments of the present disclosure are not limited thereto.

[0126] In some embodiments, as shown in FIG10 , any one of the plurality of connecting lines 20 has multiple cross-sections on a plane parallel to the substrate 10. For any two of the multiple cross-sections, the cross-sectional area of ​​the cross-section that is relatively closer to the substrate 10 is smaller than the cross-sectional area of ​​the cross-section that is relatively farther away from the substrate 10. For any two of the multiple cross-sections, the width (the dimension of the cross-section along the line width direction of the connecting line 20) corresponding to the cross-section that is relatively closer to the substrate 10 can be smaller than the width (the dimension of the cross-section along the line width direction of the connecting line 20) corresponding to the cross-section that is relatively farther away from the substrate 10.

[0127] Among them, for any connecting line 20, there are multiple cross-sections on a plane parallel to the substrate 10. The cross-section closest to the substrate 10 can be understood as the first surface Q1, and the cross-section farthest from the substrate 10 can be understood as the second surface Q2.

[0128] This arrangement allows any one of the plurality of connecting lines 20 to have a width closer to the substrate than farther from the substrate, thereby further ensuring that the thickness of the formed connecting line 20 is relatively thin on both sides of the line width direction.

[0129] This design satisfies the need to form multiple connecting wires 20 using a single film-forming process. Furthermore, multiple connecting wires 20 extending from the first main surface 11 through the designated side surface 13A to the second main surface 12 can be formed in one step, thereby reducing the reliability issues associated with wiring substrate 100 requiring wiring design and fabrication on both surfaces, thereby improving the quality of wiring substrate 100.

[0130] In some examples, as shown in FIG10 , any one of the plurality of connecting wires 20 has multiple cross sections in a plane parallel to the substrate 10, with the cross-sectional areas of the multiple cross sections gradually decreasing in a direction away from the substrate 10. Based on this, the first side surface Q3 of any one of the connecting wires 20 can be made relatively flat, making the structure of the connecting wire 20 more regular and facilitating improved quality of the connecting wire 20.

[0131] In some embodiments, as shown in FIG10 , any one of the plurality of connecting lines 20 may have a trapezoidal cross-sectional shape on a plane perpendicular to its extension direction. The "trapezoidal shape" may be a regular trapezoid, with the upper base of the "trapezoidal shape" formed by the second surface Q2 of the connecting line 20, the lower base of the "trapezoidal shape" formed by the first surface Q1 of the connecting line 20, and the two sides of the "trapezoidal shape" formed by the two first side surfaces Q3 of the connecting line 20. That is, the upper base of the regular trapezoid is shorter than the lower base.

[0132] The above structure further ensures that the thickness of the formed connecting wire 20 on both sides of its line width is relatively thin, meeting the requirement of forming multiple connecting wires 20 using a single film-forming process. This reduces the reliability issues associated with the wiring substrate 100 requiring wiring design and fabrication on both surfaces, thereby improving the quality of the wiring substrate 100. Furthermore, the above structure allows for a more regular structure for each connecting wire 20, enhancing the regularity and aesthetics of the wiring substrate 100.

[0133] In some examples, as shown in FIG10 , the cross-sectional shape of any one of the plurality of connecting lines 20 on a plane perpendicular to its own extending direction is an isosceles trapezoid.

[0134] With the above structure, the areas of the two first side surfaces Q3 of the connecting wire 20 are substantially equal. Furthermore, the patterning process of the wiring substrate 100 can be simplified during the patterning of the connecting wire 20. Furthermore, the regularity and aesthetics of the wiring substrate 100 can be improved, as can the quality of the connecting wire 20.

[0135] In some embodiments, as shown in Figure 10, for any connecting line 20 in the wiring substrate 100, the portion included between a first side surface Q3 and the first surface Q1 is defined as the tail portion 20a of the connecting line 20, and the portion included between the second surface Q2 and the first surface Q1 is defined as the main body 20b of the connecting line 20.

[0136] That is, along the third direction Z, the portion between the first side surface Q3 and the first surface Q1 of the connecting wire 20 constitutes the tail portion 20a of the connecting wire 20, and the portion between the second surface Q2 and the first surface Q1 of the connecting wire 20 constitutes the main portion 20b of the connecting wire 20. The main portion 20b of the connecting wire 20 is located between the two tail portions 20a.

[0137] The thickness of the tail portion 20a of the connecting wire 20 on the side closest to the main portion 20b of the connecting wire 20 is greater than the thickness of the tail portion 20a on the side farther from the main portion 20b of the connecting wire 20, so that the thickness of the tail portion 20a of the connecting wire 20 decreases as it moves farther from the main portion 20b. Furthermore, based on the above-described structure of the connecting wire 20, the requirement for forming multiple connecting wires 20 using a single film-forming process can be met. This reduces the reliability of the wiring substrate 100, which is caused by the need to design and fabricate wiring on both surfaces, and improves the quality of the wiring substrate 100.

[0138] Taking the example that the cross-sectional shape of the connecting line 20 on the plane perpendicular to its extending direction is a trapezoid, the cross-sectional shape of the tail portion 20a of the connecting line 20 on the plane perpendicular to its extending direction is a triangle.

[0139] Based on this, the length of the first side surface Q3 along the width direction of the connecting line 20 can be understood as the length of the base of the triangle corresponding to the cross section.

[0140] It should be noted that the main portion 20b and the tail portion 20a of any connecting wire 20 in the wiring substrate 100 are not two separately formed parts, but the integrally formed connecting wire 20 is divided into several parts to facilitate a clear introduction to the shape of the connecting wire 20.

[0141] In some embodiments, as shown in FIG10 , the length D1 of the first side surface Q3 along the width of the connecting wire 20 ranges from 6 μm to 25 μm. That is, the length D1 of the orthographic projection of the first side surface Q3 on the substrate 10 along the width of the connecting wire 20 ranges from 6 μm to 25 μm. Because the length of the tail portion 20 a of the connecting wire 20 depends on the length D1 of the first side surface Q3 of the connecting wire 20, the range of the length D1 of the first side surface Q3 affects the size of the tail portion 20 a of the connecting wire 20.

[0142] When the length D1 of the first side surface Q3 along the width of the connecting wire 20 is equal to or close to 6 μm, the length D1 of the first side surface Q3 is small, and the length of the tail portion 20a of the connecting wire 20 is also small. In this case, the tail portion 20a of the connecting wire 20 is prevented from being too long, thereby affecting the electrical performance of the connecting wire 20. At the same time, the structure of the tail portion 20a of the connecting wire 20 can be utilized to meet the requirement of forming multiple connecting wires 20 using a single film formation process. This reduces the low reliability of the wiring substrate 100, which is caused by the need to design and manufacture wiring on both surfaces, and improves the quality of the wiring substrate 100.

[0143] When the length D1 of the first side surface Q3 along the width of the connecting wire 20 is equal to or close to 25 μm, the length D1 of the first side surface Q3 is longer, and the length of the tail portion 20 a of the connecting wire 20 is longer. In this case, the first angle θ formed by the tail portion 20 a of the connecting wire 20 can be made smaller, making it easier to form multiple connecting wires 20 using a single film formation process. This reduces the reliability of the wiring substrate 100, which is caused by the need for wiring design and fabrication on both surfaces, and improves the quality of the wiring substrate 100. At the same time, it can also meet the electrical performance requirements of the connecting wire 20.

[0144] In some examples, along the line width direction of the connection line 20 , the length D1 of the first side surface Q3 ranges from 6 μm to 15 μm.

[0145] When the length D1 of the first side surface Q3 along the line width direction of the connecting wire 20 is within a range of 6 μm to 15 μm, the electrical performance requirements of the connecting wire 20 can be met while also satisfying the requirement of forming multiple connecting wires 20 using a single film formation process. This reduces the reliability issue of the wiring substrate 100 caused by the need for wiring design and fabrication on both surfaces, thereby improving the quality of the wiring substrate 100.

[0146] For example, along the width direction of the connection line 20 , the length D1 of the first side surface Q3 is about 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, or 15 μm. However, the present disclosure is not limited thereto.

[0147] For example, a case where the length D1 of the first side surface Q3 along the width of the connecting wire 20 is approximately 10 μm is used. In this case, the connecting wire 20 can satisfy the requirement of forming multiple connecting wires 20 using a single film formation process, thereby alleviating the problem of lower reliability of the wiring substrate 100 caused by requiring wiring design and fabrication on both surfaces, while also providing better electrical performance.

[0148] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the length D1 of the first side surface Q3 along the line width direction of the connecting line 20 fluctuates within the range of ±10%×10μm, it can also be considered that the length D1 of the first side surface Q3 along the line width direction of the connecting line 20 is equal to 10μm.

[0149] In some embodiments, as shown in FIG10 , the length of the second surface Q2 along the width direction of the connecting wire 20 ranges from 40 μm to 300 μm. Since the length of the main portion 20 b of the connecting wire 20 depends on the length D2 of the first side surface Q3 of the connecting wire 20 , the length range of the first side surface Q3 affects the size of the main portion 20 b of the connecting wire 20 .

[0150] When the length D2 of the second surface Q2 along the line width direction of the connecting wire 20 is equal to or close to 40 μm, the length D2 of the second surface Q2 is small, and the length of the main body 20b of the connecting wire 20 is small, so that the line width of the connecting wire 20 is narrow. In this case, the flexible arrangement of multiple connecting wires 20 in the wiring substrate 100 can be facilitated while meeting the precision requirements of existing manufacturing processes.

[0151] When the length D2 of the second surface Q2 along the line width of the connecting wire 20 is equal to or close to 300 μm, the length D2 of the second surface Q2 is greater, and the length of the main body 20b of the connecting wire 20 is greater, thereby making the line width of the connecting wire 20 wider. In this case, the flexible arrangement of multiple connecting wires 20 in the wiring substrate 100 can be facilitated while meeting the precision requirements of existing manufacturing processes. In this case, the impedance of each connecting wire 20 in the wiring substrate 100 can be easily reduced, which is conducive to reducing power consumption in the wiring substrate 100. It can also prevent the problem of the line width of the connecting wire 20 being too wide, which would require a significant reduction in the total number of connecting wires 20 in the wiring substrate 100, thereby meeting the required total number of connecting wires 20 in the wiring substrate 100.

[0152] In some examples, along the line width direction of the connection line 20 , the length D2 of the second surface Q2 ranges from 40 μm to 100 μm.

[0153] When the length D2 of the second surface Q2 in the line width direction of the connecting wire 20 is within the range of 40 μm to 100 μm, it can facilitate the flexible arrangement of multiple connecting wires 20 in the wiring substrate 100 while meeting the requirements of the existing manufacturing process accuracy.

[0154] For example, along the width direction of the connection line 20 , the length D2 of the second surface Q2 is approximately 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 150 μm, 200 μm, 250 μm, or 300 μm. However, the present disclosure is not limited thereto.

[0155] For example, the length D2 of the second surface Q2 along the width direction of the connection line 20 is about 80 μm. This helps improve the flexibility of the multiple connection lines 20 in the wiring substrate 100 and meets the total number of connection lines 20 in the wiring substrate 100.

[0156] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the length D2 of the second surface Q2 along the line width direction of the connecting line 20 fluctuates within the range of ±10%×80μm, it can also be considered that the length D2 of the second surface Q2 along the line width direction of the connecting line 20 satisfies and is equal to 80μm.

[0157] In some embodiments, as shown in Figures 7 to 9 , any one of the plurality of connecting lines 20 within the wiring substrate 100 includes a first line segment 21, a second line segment 22, and a third line segment 23 connected in sequence. The first line segment 21 is located on the first major surface 11, the second line segment 22 is located on the designated side surface 13A, and the third line segment 23 is located on the second major surface 12.

[0158] The first line segment 21, the second line segment 22, and the third line segment 23 of the connecting line 20 are arranged on the same layer. That is, the first line segment 21, the second line segment 22, and the third line segment 23 of the connecting line 20 are not individually formed into multiple line segments. Instead, the integrally formed connecting line 20 is divided into several parts according to its position on the substrate 10 to facilitate a clear description of the shape of the connecting line 20.

[0159] It should be noted that "same layer" refers to a layer structure formed using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0160] In some examples, as shown in FIG7 , a plurality of first line segments 21 are arranged along a first direction X and extend in a second direction Y. The line width direction of the first line segments 21 is parallel to the first direction X.

[0161] Exemplarily, the first line segments 21 located on the first major surface 11 of the substrate 10 are straight line segments. That is, any two adjacent first line segments 21 among the plurality of first line segments 21 are parallel to each other. This design can minimize the length of the first line segments 21, thereby reducing the size of the peripheral area SA.

[0162] In some examples, as shown in FIG9 , the plurality of second line segments 22 are arranged along the first direction X and extend in the third direction Z. The line width direction of the second line segments 22 is parallel to the first direction X.

[0163] Exemplarily, the second line segments 22 located on the predetermined side surface 13A of the substrate 10 are straight line segments. That is, any two adjacent second line segments 22 among the plurality of second line segments 22 are parallel to each other. Furthermore, the second line segments 22 are perpendicular to the first major surface 11 and / or the second major surface 12. This design can minimize the length of the second line segments 22.

[0164] It should be noted that, if the side surface 13A is laid out flat on the plane where the first major surface 11 is located, the extending direction of the first line segment 21 is consistent with the extending direction of the second line segment 22 .

[0165] In some examples, as shown in FIG8 , a fan-out region F is provided on one side of the second main surface 12 of the substrate 10 in the wiring substrate 100. The third line segment 23 of the connecting line 20 located on the side of the second main surface 12 of the substrate 10 facing away from the first main surface 11 includes a fan-out portion 231 located in the fan-out region F. The fan-out portion 231 gradually approaches the first central axis O1 of the wiring substrate 100 from an end close to the second line segment 22 to an end away from the second line segment 22.

[0166] The first central axis O1 of the wiring substrate 100 is perpendicular to the arrangement direction of the connection lines 20 (the first direction X), and the first central axis O1 of the wiring substrate 100 is perpendicular to the third direction Z. That is, the first central axis O1 is parallel to the second direction Y.

[0167] Since the plurality of fan-out portions 231 gradually approach the first central axis O1 of the wiring substrate 100 from one end close to the second line segment 22 to the end far away from the second line segment 22, the line width direction of the fan-out portion 231 intersects the first direction X.

[0168] As shown in the above structure, the connecting wire 20 provided in this embodiment also includes a fan-out portion 231 located on one side of the second main surface 12 of the substrate 10. That is, the connecting wire 20 provided in this embodiment can not only be used to electrically connect the devices on the first main surface 11 of the substrate 10 with the devices on the second main surface 12. In addition, the size of the end of the fan-out portion 231 of the connecting wire 20 provided in this embodiment close to the set side surface 13A in the first direction X is larger than the size of the end of the fan-out portion 231 away from the set side surface 13A in the first direction X, and the spacing between the ends of two adjacent fan-out portions 231 close to the set side surface 13A in the first direction X is larger than the spacing between the ends of the two adjacent fan-out portions 231 away from the set side surface 13A in the first direction X so as to facilitate the subsequent electrical connection of the connecting wire 20 with a circuit board W of a specific size (as shown in Figure 5). Therefore, there is no need to perform a sequential patterning process on one side of the second main surface 12 of the wiring substrate 100 substrate 10 to form the fan-out line, and there is no need to perform multiple flipping operations on the wiring substrate 100. Therefore, the problem of low reliability of the wiring substrate 100 caused by the need to design and manufacture wiring on both surfaces can be reduced, thereby improving the quality of the wiring substrate 100.

[0169] In some examples, as shown in FIG8 , the length D3 of the fan-out region F in a direction perpendicular to the width of the plurality of connection lines 20 (the second direction Y) ranges from 3 mm to 20 mm. That is, the length of the fan-out portion 231 of the third line segment 23 of the connection line 20 in the direction perpendicular to the width of the plurality of connection lines 20 (the second direction Y) ranges from 3 mm to 20 mm.

[0170] When the length D3 of the fan-out area F is equal to or close to 3 mm along the direction perpendicular to the line width of the multiple connecting lines 20 (the second direction Y), the length of the fan-out area F is shorter, which can save materials, reduce costs, improve design integration, and reduce the process difficulty of manufacturing the connecting lines 20.

[0171] When the length D3 of the fan-out region F is equal to or close to 20 mm along the direction perpendicular to the width of the multiple connecting wires 20 (the second direction Y), the length of the fan-out region F is longer. The dimension of the end of the fan-out portion 231 of the connecting wire 20 near the set side surface 13A in the first direction X is greater than the dimension of the end of the fan-out portion 231 away from the set side surface 13A in the first direction X. Therefore, the longer the length D3 of the fan-out region F, the greater the difference in the dimension of the end of the fan-out portion 231 near the set side surface 13A in the first direction X and the end of the fan-out portion 231 away from the set side surface 13A in the first direction X. The greater the difference in the spacing between the ends of two adjacent fan-out portions 231 near the set side surface 13A and the ends of the two adjacent fan-out portions 231 away from the set side surface 13A in the first direction X. This facilitates the subsequent electrical connection of the connecting wire 20 to a smaller circuit board W (as shown in FIG. 5 ), and can reduce the cost of the circuit board W used while meeting process accuracy.

[0172] In some examples, as shown in FIG8 , along a direction perpendicular to the width of the plurality of connection lines 20 (the second direction Y), a length D3 of the fan-out region F ranges from 10 mm to 18 mm.

[0173] Along the direction perpendicular to the width of the multiple connecting lines 20 (the second direction Y), the length D3 of the fan-out area F is in the range of 10 mm to 18 mm, which can not only meet the process accuracy requirements when manufacturing the connecting lines 20, but also save material costs while taking into account production time.

[0174] For example, along the direction perpendicular to the width of the plurality of connection lines 20 (the second direction Y), the length D3 of the fan-out region F is approximately any one of 3 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, or 20 mm. However, the embodiments of the present disclosure are not limited thereto.

[0175] It should be noted that, in this description, the length D3 of the fan-out area F is approximately 15 mm in the direction perpendicular to the width of the multiple connecting lines 20 (the second direction Y). Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), if the length D3 of the fan-out area F fluctuates within a range of ±10% × 15 mm in the direction perpendicular to the width of the multiple connecting lines 20 (the second direction Y), it can be considered that the length D3 of the fan-out area F in the direction perpendicular to the width of the multiple connecting lines 20 (the second direction Y) is equal to 15 mm.

[0176] In some embodiments, as shown in FIG8 , the second major surface 12 further includes a lead-out region R, which is located on a side of the fan-out region F near the set side surface 13A. The third line segment 23 of the connecting line 20 further includes a lead-out portion 232 located in the lead-out region R. The lead-out portion 232 is used to connect the second line segment 22 and the fan-out portion 231. The plurality of lead-out portions 232 are arranged along the first direction X and extend in the second direction Y. At this time, the extension direction of the lead-out portion 232 in the third line segment 23 intersects the extension direction of the fan-out portion 231 in the third line segment 23.

[0177] For example, the lead portion 232 in the third line segment 23 on the second major surface 12 of the substrate 10 can be understood as a straight line segment. That is, any two adjacent lead portions 232 in the plurality of lead portions 232 are parallel to each other. Furthermore, the lead portion 232 in the third line segment 23 is perpendicular to the side surface 13.

[0178] It should be noted that, if the side surface 13A is laid out flatly to the plane where the second main surface 12 is located, the extension direction of the lead-out portion 232 is consistent with the extension direction of the second line segment 22 .

[0179] Based on this, a lead-out portion 232 is further provided on the side of the fan-out portion 231 close to the set side surface 13A in the third line segment 23 of the connecting line 20 , which can facilitate the connection between the third line segment 23 and the second line segment 22 .

[0180] In some examples, along the second direction Y, the length D4 of the lead portion 232 ranges from 0.06 mm to 1 mm.

[0181] When the length D4 of the lead-out portion 232 is equal to or close to 0.06 mm along the second direction Y, the length of the lead-out portion 232 can be made shorter, thereby preventing the problem of the third line segment 23 being too long and causing increased difficulty in manufacturing; when the length D4 of the lead-out portion 232 is equal to or close to 1 mm along the second direction Y, the length of the lead-out portion 232 can be made longer, thereby reducing the probability of the lead-out portion 232 of the third line segment 23 being formed on the set side surface 13A, and also meeting the requirements for process accuracy when manufacturing the connecting line 20.

[0182] In some other examples, along the second direction Y, the length D4 of the lead portion 232 ranges from 0.5 mm to 1 mm.

[0183] When the length D4 of the lead-out portion 232 is in the range of 0.5 mm to 1 mm, the lead-out portion 232 can be used to reduce the probability of forming the lead-out portion 232 of the third line segment 23 on the set side surface 13A. At the same time, the length of the lead-out portion 232 can also meet the process accuracy requirements when making the connecting wire 20.

[0184] For example, along the second direction Y, the length D4 of the lead portion 232 is approximately any one of 0.06 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, or 1 mm. However, the present disclosure is not limited thereto.

[0185] It should be noted that the length D4 of the lead portion 232 is approximately 0.8 mm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), the length D4 of the lead portion 232 along the second direction Y can be considered to be equal to 0.8 mm when the length D4 of the lead portion 232 along the second direction Y and the length D3 of the fan-out region F fluctuate within the range of ±10% × 0.8 mm.

[0186] In some embodiments, in any one of the plurality of connecting lines 20 , the extending direction of the lead-out portion 232 , the extending direction of the first line segment 21 , and the extending direction of the second line segment 22 connected sequentially are located in the same plane.

[0187] Based on this, if the set side surface 13A and the second main surface 12 of the substrate 10 are sequentially spread out to the plane where the first main surface 11 of the substrate 10 is located, the connecting line 20 formed by connecting the lead-out portion 232, the first line segment 21 and the second line segment 22 is a straight line segment, which can facilitate improving the regularity of the connecting line 20 and improve the flexibility of setting the connecting line 20 in the wiring substrate 100.

[0188] In some examples, the plane is substantially perpendicular to the set side surface. In this way, the second line segment 22 can be substantially perpendicular to the first major surface 11 and / or the second major surface 12 to minimize the length of the second line segment 22.

[0189] It should be noted that "substantially perpendicular" includes both absolutely perpendicular and approximately perpendicular. That is, the plane may intersect with the designated side surface at an angle of 90°. Alternatively, the plane may intersect with the designated side surface at an angle of approximately 90°. For example, the plane may intersect with the designated side surface at an angle of 85° to 95°. For example, the plane may intersect with the designated side surface at an angle of approximately 85°, 90°, or 95°.

[0190] When the wiring substrate 100 is applied to a backplane, the connecting wires 20 need to be electrically connected to the circuit board W. However, since the fan-out portions 231 of the third line segments 23 extend in different directions, the fan-out portions 231 are not easily electrically connected to the circuit board W.

[0191] Based on this, in some embodiments, as shown in FIG8 , the second major surface 12 further includes a binding region U located on a side of the fan-out region F away from the designated side surface 13A. The third line segment 23 of the connecting line 20 further includes a binding portion 233 located in the binding region. The plurality of binding portions 233 are arranged along the first direction X and extend in the second direction Y.

[0192] Exemplarily, the extension directions of any two binding portions 233 among the plurality of binding portions 233 are parallel, for example, perpendicular to the first direction X.

[0193] As described above, a binding portion 233 is provided on the side of the fan-out portion 231 in the third line segment 23 that is away from the designated side surface 13A. Since the multiple binding portions 233 extend in the same direction, the binding portions 233 can be used to connect the connecting wire 20 to the circuit board W. Furthermore, the binding portions 233 can be used to alleviate the problem of difficulty in subsequent connection with the circuit board W caused by the inconsistent extension directions of the fan-out portions 231.

[0194] In some examples, along the second direction Y, the length D5 of the binding portion 233 ranges from 0.9 mm to 2 mm.

[0195] When the length D5 of the binding portion 233 along the second direction Y is equal to or close to 0.9 mm, the connection requirement between the binding portion 233 and the circuit board W can be met, facilitating the subsequent electrical connection between the connecting wire 20 in the wiring substrate 100 and the circuit board W.

[0196] When the length D5 of the binding portion 233 along the second direction Y is equal to or close to 2 mm, the length of the binding portion 233 is longer, which is beneficial to improving the stability of the connection between the binding portion 233 and the circuit board W.

[0197] For example, along the second direction Y, the length D5 of the binding portion 233 is approximately any one of 0.9 mm, 1 mm, 1.2 mm, 1.5 mm, 1.8 mm, or 2 mm. However, the embodiments of the present disclosure are not limited thereto.

[0198] It should be noted that the length D5 of the binding portion 233 along the second direction Y is approximately 1.5 mm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the length D5 of the binding portion 233 along the second direction Y fluctuates within the range of ±10%×1.5 mm, it can also be considered that the length D5 of the binding portion 233 along the second direction Y is equal to 1.5 mm.

[0199] In some embodiments, as shown in FIG8 , the lead-out portion 232, fan-out portion 231, and binding portion 233, which are sequentially connected in the third segment 23 of the connecting wire 20, are an integrated structure. That is, the lead-out portion 232, fan-out portion 231, and binding portion 233 of the third segment 23 are not individually fabricated sub-sections. Instead, they are divided into multiple sections based on the different functions of various locations in the third segment 23 to facilitate a clear description of the structure and function of the third segment 23.

[0200] In some examples, the lead-out portion 232 , the fan-out portion 231 , and the binding portion 233 in the third line segment 23 are arranged in the same layer.

[0201] It should be noted that "same layer" refers to a layer structure formed using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0202] In some embodiments, as shown in FIG. 9 , along the third direction Z, the length D6 of the second line segment 22 is substantially equal to the thickness of the substrate 10 .

[0203] Based on this, when the second line segment 22 is used to connect the first line segment 21 located on the first main surface 11 of the substrate 10 (as shown in Figure 7) with the third line segment 23 located on the second main surface 12 of the substrate 10 (as shown in Figure 8), the probability of the second line segment 22 being formed on the first main surface 11 and the second main surface 12 of the substrate 10 is reduced.

[0204] In some embodiments, as shown in FIG. 9 , along the third direction Z, the length D6 of the second line segment 22 ranges from 0.3 mm to 0.75 mm.

[0205] When the length D6 of the second line segment 22 is within the range of 0.3 mm to 0.75 mm, the length D6 of the second line segment 22 can be made substantially equal to the thickness of the substrate 10. The second line segment 22 can be extended from an end of the set side surface 13A of the substrate 10 close to the second major surface 12 to an end of the set side surface 13A close to the first major surface 11, so that the first line segment 21 on the first major surface 11 of the substrate 10 (as shown in FIG. 7 ) is connected to the third line segment 23 on the second major surface 12 of the substrate 10 (as shown in FIG. 8 ) by using the second line segment 22 on the set side surface 13A.

[0206] For example, along the third direction Z, the length D6 of the second line segment 22 is approximately any one of 0.3 mm, 0.4 mm, 0.5 mm, 0.55 mm, 0.6 mm, 0.65 mm, 0.7 mm, or 0.75 mm. However, the embodiments of the present disclosure are not limited thereto.

[0207] It should be noted that the length D6 of the second line segment 22 along the third direction Z is approximately 0.6 mm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the length D6 of the second line segment 22 along the third direction Z fluctuates within the range of ±10%×0.6 mm, it can also be considered that the length D6 of the second line segment 22 along the third direction Z of the thickness of the substrate 10 is equal to 0.6 mm.

[0208] Therein, for the situation where “along the third direction Z, the length D6 of the second line segment 22 is substantially equal to the thickness of the substrate 10 ”, the following two methods are included.

[0209] The first type: along the third direction Z, the length D6 of the second line segment 22 is equal to the thickness of the substrate 10. That is, the end surface where the second line segment 22 connects to the first line segment 21 is coplanar with the first major surface 11, and the end surface where the second line segment 22 connects to the third line segment 23 is coplanar with the second major surface 12.

[0210] At this time, the first line segment 21 on the first main surface 11 (as shown in Figure 7) can be set to extend slightly beyond the first main surface 11, so that the part of the first line segment 21 protruding from the first main surface 11 can be used to contact the second line segment 22 located on the set side surface 13A to achieve connection between the two.

[0211] Exemplarily, the length of the portion of the first line segment 21 protruding from the first main surface 11 is substantially equal to the thickness of the second line segment 22 , so that the two can achieve contact connection.

[0212] In addition, the third line segment 23 on the second main surface 12 can be set to extend beyond the second main surface 12, so that the portion of the third line segment 23 (as shown in FIG. 8 ) slightly protruding from the second main surface 12 can be used to contact the second line segment 22 located on the set side surface 13A to achieve connection between the two.

[0213] Exemplarily, the length of the portion of the third line segment 23 protruding from the second main surface 12 is substantially equal to the thickness of the second line segment 22 , so that the two can achieve contact connection.

[0214] 9 , along the third direction Z, the length D6 of the second line segment 22 is greater than the thickness of the substrate 10. In this case, along the third direction Z, both ends of the second line segment 22 may extend outward to slightly protrude from the set side surface 13A.

[0215] That is, one end of the second line segment 22 connected to the first line segment 21 (as shown in Figure 7) extends to protrude from the first main surface 11 of the substrate 10, so that the second line segment 22 can extend to contact the first line segment 21 located on the first main surface 11 to achieve connection between the two.

[0216] Illustratively, the length of the portion of the second line segment 22 protruding from the first main surface 11 of the substrate 10 is substantially equal to the thickness of the first line segment 21 located on the first main surface.

[0217] In addition, one end of the second line segment 22 connected to the third line segment 23 (as shown in Figure 8) extends to protrude from the second main surface 12 of the substrate 10, so that the second line segment 22 can extend to contact the third line segment 23 located on the second main surface 12 to achieve connection between the two.

[0218] Illustratively, the length of the portion of the second line segment 22 protruding from the second main surface 12 of the substrate 10 is substantially equal to the thickness of the third line segment 23 located on the second main surface 12 .

[0219] Figure 11 is a partial plan view of the front surface of a wiring substrate according to some embodiments, and Figure 12 is a partial plan view of the front surface of a wiring substrate according to other embodiments. Both Figures 11 and 12 are partial plan views of the first major surface 11 side of the substrate 10 of the wiring substrate 100.

[0220] In some embodiments, as shown in FIG. 11 and FIG. 12 , the main functional area AA of the wiring substrate 100 further includes device areas M with multiple rows and columns. The device areas M can be used to set functional devices Q (as shown in FIG. 4 ).

[0221] Wiring substrate 100 further includes a plurality of first electrodes P1. These electrodes P1 are located on a side of first major surface 11 of substrate 10 that faces away from second major surface 12 of substrate 10. Furthermore, these electrodes P1 are located on a side of first major surface 11 of substrate 10 that is closer to designated side surface 13A. This arrangement facilitates electrical connection between first electrodes P1 located on the side of first major surface 11 of substrate 10 and first line segment 21.

[0222] The above “the first electrodes P1 are located on a side of the first main surface 11 of the substrate 10 close to the set side surface 13A” may include the following two situations.

[0223] In the first type, as shown in FIG. 11 , the first electrode P1 is located in the peripheral area SA, and the first electrode P1 is electrically connected to the first line segment 21 of the connection line 20 .

[0224] Based on this, the connecting wire 20 can use the first electrode P1 to electrically connect to the functional device Q (as shown in FIG4 ) disposed in the device area M within the main functional area AA. Subsequently, the connecting wire 20 is used to electrically connect to the circuit board W. Furthermore, the connecting wire 20 can be used to electrically connect the functional device Q to the circuit board W to drive the functional device Q.

[0225] In the second example, as shown in FIG12 , within the primary functional area AA of the wiring substrate 100 , the row of device areas M closest to the designated side surface 13A among the multiple rows of device areas M is defined as a target row M0 . In the target row M0 , a first space M1 is defined between two adjacent device areas M. Multiple first electrodes P1 are located within these first spaces M1 , and the first electrodes P1 are electrically connected to the first segments 21 of the connecting wires 20 .

[0226] Based on this, the connecting wire 20 can use the first electrode P1 to electrically connect to the functional device Q (as shown in FIG4 ) disposed in the device area M within the main functional area AA. Subsequently, the connecting wire 20 is used to electrically connect to the circuit board W. Furthermore, the connecting wire 20 can be used to electrically connect the functional device Q to the circuit board W to drive the functional device Q.

[0227] In addition, compared with the wiring substrate 100 shown in FIG. 11 , the wiring substrate 100 shown in FIG. 12 has a portion of the first electrode P1 disposed within the main functional area AA, which is beneficial for further reducing the space of the peripheral area SA.

[0228] Here, "multiple first electrodes P1 are located in multiple first spaces M1" can be understood as one electrode P1 being located in one first space M1. That is, there is a one-to-one correspondence between first electrodes P1 and first spaces M1. Figure 12 illustrates an example of one electrode P1 being located in one first space M1. Alternatively, it can be understood as multiple electrodes P1 being located in one first space M1. However, the embodiments of the present disclosure are not limited to this.

[0229] In some embodiments, as shown in Figures 11 and 12 , the width of the first electrode P1 is greater than or equal to 0.05 mm along the direction in which the plurality of connection lines 20 are arranged (in the first direction X). The maximum width of the first electrode P1 can be adjusted based on the number of first electrodes P1 required in the wiring substrate 100.

[0230] Based on this, it is possible to ensure that the contact resistance between the first electrode P1 and the connecting line 20 meets the requirement, and also ensure a stable connection between the first electrode P1 and the connecting line 20 .

[0231] For example, along the direction in which the plurality of connection lines 20 are arranged (in the first direction X), the width of the first electrode P1 is approximately 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm, 1 mm or 1.5 mm, etc. However, the present disclosure is not limited thereto.

[0232] It should be noted that the description herein uses the example of a width of the first electrode P1 being approximately 0.06 mm along the direction in which the multiple connecting lines 20 are arranged (in the first direction X). Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), if the width of the first electrode P1 along the direction in which the multiple connecting lines 20 are arranged (in the first direction X) fluctuates within a range of ±10% × 0.06 mm, it can be considered that the width of the first electrode P1 along the direction in which the multiple connecting lines 20 are arranged (in the first direction X) is equal to 0.06 mm.

[0233] In some embodiments, as shown in FIG. 11 and FIG. 12 , along a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the first electrode P1 ranges from 0.05 mm to 0.2 mm.

[0234] When the length of the first electrode P1 is equal to or close to 0.05 mm in a direction perpendicular to the arrangement of the plurality of connecting wires 20 (the second direction Y), the shorter length of the first electrode P1 facilitates reducing the size of the peripheral area SA of the wiring substrate 100. Furthermore, this also satisfies the requirement for a stable connection between the first electrode P1 and the connecting wires 20.

[0235] When the length of the first electrode P1 is equal to or close to 0.2 mm in a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the longer length of the first electrode P1 is beneficial for improving the stability of the connection between the first electrode P1 and the connection line 20. Furthermore, the requirement for a narrow frame of the wiring substrate 100 can also be met.

[0236] In some examples, as shown in FIG. 11 and FIG. 12 , along a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the first electrode P1 ranges from 0.08 mm to 0.15 mm.

[0237] When the length of the first electrode P1 is within the range of 0.08 mm to 0.15 mm, the first electrode P1 can be securely connected to the connecting wire 20 while also meeting the requirement of a narrow frame for the wiring substrate 100. Furthermore, when the length of the first electrode P1 is within the range of 0.08 mm to 0.15 mm, the manufacturing process can be simplified.

[0238] For example, in the direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the first electrode P1 is approximately 0.05 mm, 0.08 mm, 0.1 mm, 0.12 mm, 0.15 mm, 0.18 mm, or 2 mm. However, the present disclosure is not limited thereto.

[0239] It should be noted that the length of the first electrode P1 is approximately 0.1 mm along a direction perpendicular to the arrangement of the multiple connecting lines 20 (the second direction Y). Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), the length of the first electrode P1 along the direction perpendicular to the arrangement of the multiple connecting lines 20 (the second direction Y) can also be considered to be equal to 0.1 mm when the length of the first electrode P1 fluctuates within a range of ±10% × 0.1 mm.

[0240] In some embodiments, as shown in FIG. 11 and FIG. 12 , along the direction in which the plurality of connection lines 20 are arranged (in the first direction X), the width of the connection line 20 is greater than or equal to half the width of the first electrode P1 .

[0241] Such a configuration can facilitate the fixed connection between the first electrode P1 and the connecting line 20 and prevent disconnection.

[0242] In some examples, along the first direction X, the width of the connection line 20 is greater than or equal to the width of the first electrode P1 .

[0243] Based on this, the orthographic projection of the first electrode P1 on the substrate 10 can be located within the range of the orthographic projection of the connecting line 20 on the substrate 10, which facilitates the fixed connection between the first electrode P1 and the connecting line 20 and prevents disconnection.

[0244] In some embodiments, as shown in FIG. 11 and FIG. 12 , in a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the connection line 20 is greater than the length of the first electrode P1 .

[0245] Based on this, the orthographic projection of the first electrode P1 on the substrate 10 can be located within the range of the orthographic projection of the connecting line 20 on the substrate 10, and the fixed connection between the first electrode P1 and the connecting line 20 can be further ensured to prevent disconnection.

[0246] In some embodiments, as shown in FIG. 11 and FIG. 12 , along a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the first line segment 21 ranges from 0.15 mm to 0.4 mm.

[0247] When the length of the first line segment 21 is equal to or close to 0.15 mm in a direction perpendicular to the arrangement of the plurality of connecting wires 20 (the second direction Y), the shorter the length of the first line segment 21 is, the smaller the size of the peripheral area SA of the wiring substrate 100. Alternatively, the length of the first line segment 21 can be greater than or equal to half the length of the first electrode P1 to ensure a fixed connection between the connecting wire 20 and the first electrode P1.

[0248] When the length of the first line segment 21 is equal to or close to 0.2 mm in a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the longer length of the first line segment 21 is beneficial for improving the stability of the connection between the first line segment 21 and the first electrode P1. Furthermore, the requirement for a narrow frame of the wiring substrate 100 can also be met.

[0249] In some examples, as shown in FIG. 11 and FIG. 12 , along a direction perpendicular to the arrangement of the plurality of connection lines 20 (the second direction Y), the length of the first line segment 21 ranges from 0.15 mm to 0.25 mm.

[0250] When the length of the first line segment 21 is within the range of 0.15 mm to 0.25 mm in a direction perpendicular to the arrangement of the multiple connecting lines 20 (the second direction Y), the length of the first line segment 21 can be greater than or equal to half the length of the first electrode P1, ensuring a secure connection between the first electrode P1 and the connecting line 20 while also meeting the requirement for a narrow frame of the wiring substrate 100. Furthermore, when the length of the first line segment 21 is within the range of 0.15 mm to 0.25 mm, the manufacturing process can be reduced.

[0251] For example, along a direction perpendicular to the arrangement of the plurality of connecting lines 20 (the second direction Y), the length of the first line segment 21 is approximately any one of 0.15 mm, 0.18 mm, 0.2 mm, 0.22 mm, 0.25 mm, 0.28 mm, 0.3 mm, 0.32 mm, 0.35 mm, 0.38 mm, or 0.4 mm. However, the embodiments of the present disclosure are not limited thereto.

[0252] It should be noted that the following example illustrates a case where the length of the first line segment 21 is approximately 0.18 mm along a direction perpendicular to the arrangement of the multiple connecting lines 20 (the second direction Y). Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), the length of the first line segment 21 along the direction perpendicular to the arrangement of the multiple connecting lines 20 (the second direction Y) can be considered to be 0.18 mm if the length of the first line segment 21 fluctuates within a range of ±10% × 0.18 mm.

[0253] FIG13 is a partial diagram of a connection line according to some embodiments, wherein only the lead-out portion 232 in the first line segment 21 , the second line segment 22 , and the third line segment 23 of the connection line 20 is illustrated.

[0254] In some embodiments, as shown in FIG13 , along the direction in which the plurality of connecting wires 20 are arranged (in the first direction X), the width of the first segment 21, the width of the second segment 22, and the width of the lead portion 232 in the third segment 23 are substantially equal. This arrangement allows the widths of the lead portions 232 in the first segment 21, the second segment 22, and the third segment 23 in the connecting wire 20 to be equal, resulting in a more regular shape of the connecting wire 20 and facilitating flexible arrangement of the connecting wire 20.

[0255] In some examples, since the fan-out portions 231 in the third line segment 23 (as shown in FIG8 ) are arranged relatively compactly in the fan-out region F, the line width of the fan-out portions 231 in the third line segment 23 can be set to be relatively narrow to prevent the fan-out portions 231 in two adjacent third line segments 23 from short-circuiting.

[0256] It can be set that along the direction in which the plurality of connection lines 20 are arranged (in the first direction X), the width of the fan-out portion 231 (as shown in FIG. 8 ) in the third line segment 23 is smaller than the line width of the lead-out portion 232 in the third line segment 23 .

[0257] Based on this, the flexibility of setting the fan-out portion 231 in the third line segment 23 can be improved, and the distance between the fan-out portions 231 in two adjacent third line segments 23 can be increased to reduce the probability of short circuit between the fan-out portions 231 in two adjacent third line segments 23.

[0258] In some examples, due to the binding portion 233 (as shown in FIG. 8 ) in the third line segment 23 , it is subsequently necessary to electrically connect to a smaller circuit board.

[0259] Based on this, it can be set that along the direction in which the multiple connection lines 20 are arranged (in the first direction X), the width of the binding portion 233 (as shown in Figure 8) in the third line segment 23 is smaller than the line width of the lead-out portion 232 in the third line segment 23.

[0260] With the above design, the line width of the binding portion 233 in the third line segment 23 can be made narrower, and the width of the binding portion 233 in the third line segment 23 can be matched with the circuit board, which is beneficial for the electrical connection between the binding portion 233 in the third line segment 23 and the circuit board.

[0261] In other examples, the width of the binding portion 233 (as shown in FIG. 8 ) in the third line segment 23 may be set to be smaller than the width of the fan-out portion 231 (as shown in FIG. 8 ) in the third line segment 23 .

[0262] The line width of the binding portion 233 in the third line segment 23 is further reduced so as to facilitate electrical connection between the binding portion 233 in the third line segment 23 and the circuit board.

[0263] FIG. 14 is a partial diagram of connection lines according to some other embodiments.

[0264] The difference between the connecting line 20 shown in FIG. 14 and the connecting line 20 shown in FIG. 13 is that the line width of the connecting line 20 shown in FIG. 14 is greater than the line width of the connecting line 20 shown in FIG. 13 .

[0265] Based on this, as shown in Figure 14, the line width of the first line segment 21 can be relatively increased, which can not only reduce the difficulty of connecting the first line segment 21 with the first electrode P1, but also help reduce the contact resistance between the first line segment 21 and the first electrode P1, thereby ensuring the electrical performance of the wiring substrate 100.

[0266] In order to compare the difference in line width between the connecting line 20 shown in Figure 13 and the connecting line 20 shown in Figure 14, the first electrode P1 is also schematically shown in Figures 13 and 14. It can be understood that the widths of the first electrodes P1 shown in Figures 13 and 14 are equal.

[0267] FIG. 15 is a partial diagram of connection lines according to yet other embodiments.

[0268] In some embodiments, as shown in FIG. 15 , within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (the first direction X), the width of the second line segment 22 is greater than the width of the first line segment 21 .

[0269] This arrangement allows the line width of the second line segment 22 disposed on the designated side surface of the substrate to be greater than the line width of the first line segment 21 located on the first major surface of the substrate. This facilitates increasing the contact area between the second line segment 22 and the designated side surface of the substrate, thereby improving the stability of the second line segment 22 and the designated side surface of the substrate.

[0270] In some embodiments, as shown in FIG. 15 , within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the second line segment 22 is greater than the width of the lead portion 232 in the third line segment 23 .

[0271] Such a setting can make the second line segment 22 set on the set side of the substrate wider, which can facilitate increasing the contact area between the second line segment 22 and the set side of the substrate, thereby improving the stability of the second line segment 22 and the set side of the substrate.

[0272] In some examples, within the same connecting line 20, the width of the lead portion 232 of the third line segment 23 can be set to be smaller than the width of the first line segment 21. In this way, the lead portion 232 of the third line segment 23 can act as a transition line segment to prevent the connecting line 20 from being easily damaged due to sudden changes in line width.

[0273] In other examples, within the same connecting line 20, the width of the first line segment 21 can be set to be smaller than the width of the lead portion 232 of the third line segment 23. This configuration can reduce the width of the first line segment 21, thereby increasing the spacing between adjacent first line segments 21 and preventing short circuits between the first line segments 21.

[0274] In some other examples, within the same connecting line 20, the width of the lead portion 232 in the third line segment 23 can be set equal to the width of the first line segment 21. This setting can make the shape of the connecting line 20 more regular, which is convenient for simplifying the manufacturing process.

[0275] FIG. 16 is a partial diagram of connection lines according to yet other embodiments.

[0276] In some embodiments, as shown in FIG. 16 , within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the lead portion 232 in the third line segment 23 is greater than the width of the second line segment 22 .

[0277] With such a configuration, the width of the second line segment 22 can be made narrower, which facilitates the removal of the corresponding mask when the second line segment 22 of the connecting line 20 is subsequently patterned, thereby reducing the manufacturing difficulty.

[0278] In some embodiments, as shown in FIG. 16 , the width of the lead portion 232 in the third line segment 23 is greater than the width of the first line segment 21 .

[0279] With such a configuration, the width of the first line segments 21 can be made narrower, thereby increasing the spacing between adjacent first line segments 21 and preventing short circuits between the first line segments 21 .

[0280] In some examples, within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the first line segment 21 is greater than the width of the second line segment 22 .

[0281] In other examples, within the same connecting line 20, along the direction in which the multiple connecting lines 20 are arranged (in the first direction X), the width of the second line segment 22 is greater than the width of the first line segment 21. This arrangement allows the first line segments 21 to be narrower, thereby increasing the spacing between adjacent first line segments 21 and preventing short circuits between the first line segments 21.

[0282] In some other examples, within the same connecting line 20, along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the first line segment 21 is equal to the width of the second line segment 22. This arrangement can make the shape of the connecting line 20 more regular, thereby simplifying the manufacturing process.

[0283] FIG. 17 is a partial diagram of connection lines according to yet other embodiments.

[0284] In some embodiments, as shown in FIG. 17 , within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the first line segment 21 is greater than the width of the second line segment 22 .

[0285] With such a configuration, the width of the first line segment 21 can be made larger, which facilitates realizing that the width of the first line segment 21 is larger than the width of the first electrode, so as to facilitate electrical connection between the first line segment 21 and the first electrode.

[0286] In some embodiments, as shown in FIG. 17 , within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the first line segment 21 is greater than the width of the lead-out portion 232 in the third line segment 23 .

[0287] With such a configuration, the width of the first line segment 21 can be made larger, so as to facilitate electrical connection between the first line segment 21 and the first electrode.

[0288] In some examples, within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the second line segment 22 is greater than the width of the lead portion 232 in the third line segment 23 .

[0289] With this arrangement, the width of the lead portion 232 in the third line segment 23 can be narrower. With this arrangement, the lead portion 232 in the third line segment 23 can act as a transition line segment to prevent the line width of the connecting line 20 from suddenly changing and causing damage.

[0290] In other examples, within the same connecting line 20 , along the direction in which the connecting lines 20 are arranged (in the first direction X), the width of the second line segment 22 is smaller than the width of the lead-out portion 232 in the third line segment 23 .

[0291] With such a configuration, the width of the second line segment 22 can be made narrower, which facilitates the removal of the corresponding mask when the second line segment 22 of the connecting line 20 is subsequently patterned, thereby reducing the manufacturing difficulty.

[0292] In some other examples, within the same connecting line 20, along the direction in which the multiple connecting lines 20 are arranged (in the first direction X), the width of the second line segment 22 is equal to the width of the lead portion 232 in the third line segment 23. This arrangement can make the shape of the connecting line 20 more regular, thereby simplifying the manufacturing process.

[0293] It should be noted that in the wiring substrate 100 shown in Figure 11, since the first line segment 21 of the connecting line 20 is set in the peripheral area SA, there is no need to make too many restrictions on the line width of the first line segment 21. It is sufficient to ensure that the width of the first line segment 21 is greater than the width of the first electrode P1.

[0294] Therefore, the connection wires 20 described in FIG. 13 to FIG. 17 are all applicable to the wiring substrate 100 shown in FIG. 11 .

[0295] However, in the wiring substrate 100 shown in FIG. 12 , since the first electrode P1 is disposed in the first space M0 , the first line segment 21 of the connecting line 20 extends into the first space M0 to electrically connect the connecting line 20 to the first electrode P1 .

[0296] To prevent the connection line 20 from shorting with the devices in the device area M, the first line segment 21 of the connection line 20 needs to be provided with a gap between the adjacent device area M. In other words, the line width of the first line segment 21 of the connection line 20 needs to be smaller than the width of the first space M0.

[0297] Therefore, the several structures in which the first line segment 21 of the connecting line 20 shown in Figures 13 to 17 has a narrower line width (the connecting line 20 shown in Figures 13, 15 and 16) are all applicable to the wiring substrate 100 shown in Figure 12.

[0298] Since the connection line in the wiring substrate 100 shown in FIG. 12 can be within the first space M0 , it is only necessary to ensure that there is a gap between the first line segment 21 and the adjacent device region M.

[0299] Based on this, when applying the connecting line 20 shown in Figures 14 and 17 to the wiring substrate 100 shown in Figure 12, it is necessary to adaptively increase the line width of the first line segment 21 so as to ensure that there is a gap between the first line segment 21 and the adjacent device area M while increasing the line width of the first line segment 21.

[0300] As shown in Figures 13 to 17 , in some embodiments, although Figures 13 and 14 illustrate portions of the connection line 20 with equal line widths, Figures 13 and 14 do not illustrate the fan-out portion 231 and the binding portion 233 of the third line segment 23 of the connection line 20. The fan-out portion 231 may be narrower than the lead-out portion 232.

[0301] Therefore, as shown in FIG. 13 to FIG. 17 , the connection lines 20 may have two adjacent portions with different line widths. In this case, a transition portion may be provided between the two portions with different line widths in the connection line 20 .

[0302] FIG. 18 is a partial diagram of connection lines according to yet other embodiments.

[0303] In some embodiments, as shown in FIG. 18 , the connecting line 20 includes at least one transition portion 24 . The transition portion 24 is located between two portions of the connecting line 20 with different line widths to connect the two portions with different line widths.

[0304] Based on this, the transition portion is used to alleviate the problem of sudden width change of the connecting line 20 , so as to ensure the electrical performance of the connecting line 20 .

[0305] In some examples, when the line widths of the first line segment 21 and the second line segment 22 in the connecting line 20 are different, the transition portion 24 includes a first transition portion 241 , which is used to connect the first line segment 21 and the second line segment 22 .

[0306] Based on this, the first transition portion 241 can be used to gradually transition the line width of the connecting line 20 from the line width of the first line segment 21 to the line width of the second line segment 22, thereby preventing a large width difference between the first line segment 21 and the second line segment 22 from causing a sudden change in the line width of the connecting line 20.

[0307] In some examples, the line width of the first transition portion 241 gradually changes along the extension direction of the connecting line 20, and the line width of the end of the first transition portion 241 connected to the first line segment 21 is approximately equal to the line width of the first line segment 21, and the line width of the end of the first transition portion 241 connected to the second line segment 22 is approximately equal to the line width of the second line segment 22.

[0308] With such a configuration, the first transition portion 241 can be used to gradually change the line width of the connection line 20 , thereby improving the problem of sudden changes in the line width of the connection line 20 and ensuring the electrical performance of the connection line 20 .

[0309] In some examples, when the line widths of the third line segment 23 and the second line segment 22 in the connecting line 20 are different, the transition portion 24 includes a second transition portion 242 , which is used to connect the third line segment 23 and the second line segment 22 .

[0310] Based on this, the second transition portion 242 can be used to gradually transition the line width of the connecting line 20 from the line width of the third line segment 23 to the line width of the second line segment 22, thereby preventing a large width difference between the third line segment 23 and the second line segment 22 from causing a sudden change in the line width of the connecting line 20.

[0311] In some examples, the line width of the second transition portion 242 gradually changes along the extension direction of the connecting line 20, and the line width of the end of the second transition portion 242 connected to the third line segment 23 is approximately equal to the line width of the third line segment 23, and the line width of the end of the second transition portion 242 connected to the second line segment 22 is approximately equal to the line width of the second line segment 22.

[0312] With such a configuration, the second transition portion 242 can be used to gradually change the line width of the connection line 20 , thereby improving the problem of sudden changes in the line width of the connection line 20 and ensuring the electrical performance of the connection line 20 .

[0313] FIG. 19 is a cross-sectional view of a wiring substrate according to some embodiments.

[0314] In some embodiments, as shown in FIG19 , in the same connecting line 20 , the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is in the range of 0.3 to 0.8.

[0315] When the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is equal to or close to 0.3, the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is small, that is, the thickness of the second line segment 22 is much thicker than the thickness of the first line segment 21.

[0316] At this time, the thicker second line segment 22 is helpful in reducing the impedance of the connecting line 20. Furthermore, the thicker second line segment 22 can improve the flatness of the surface of the second line segment 22 facing away from the designated side surface 13A of the substrate 10, thereby improving the quality of the connecting line 20.

[0317] In addition, since the length of the first line segment 21 is long and the thickness of the first line segment 21 is set to be thin, it is helpful to reduce the difficulty of manufacturing the first line segment 21.

[0318] When the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is equal to or close to 0.8, the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is larger, that is, the thickness of the second line segment 22 is thicker than the thickness of the first line segment 21.

[0319] At this point, when the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is equal to or close to 0.8, the thickness of the second line segment 22 is thinner than when the ratio is equal to 0.3. This helps reduce the difficulty of manufacturing the connecting wire 20 and, in turn, reduces the difficulty of removing the corresponding mask when subsequently patterning the second line segment 22 of the connecting wire 20. Furthermore, the surface flatness of the second line segment 22 facing away from the designated side surface 13A of the substrate 10 can be improved, thereby improving the quality of the connecting wire 20.

[0320] In addition, the thickness of the first line segment 21 is relatively thick, which can further reduce the impedance of the connecting line 20 .

[0321] It should be noted that when forming a second line segment 22 of any thickness, some unevenness may inevitably occur on the side of the second line segment 22 facing away from the substrate 10 due to the unavoidable manufacturing process. For example, a pit within this unevenness has a certain depth. Increasing the thickness of the second line segment 22 reduces the ratio of the pit depth to the second line segment 22, thereby reducing the unevenness on the side of the second line segment 22 facing away from the designated side surface 13A of the substrate 10.

[0322] Illustratively, in the same connecting line 20 , the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is approximately any one of 0.3, 0.4, 0.5, 0.6, 0.7 or 0.8.

[0323] It should be noted that the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is approximately 0.5. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 fluctuates within the range of ±10%×0.5, it can also be considered that the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 satisfies 0.5.

[0324] In some embodiments, as shown in FIG. 19 , in the same connecting line 20 , the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is in the range of 0.3 to 0.8.

[0325] When the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is equal to or close to 0.3, the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is small, that is, the thickness of the second line segment 22 is much thicker than the thickness of the third line segment 23.

[0326] At this time, the thicker second line segment 22 is helpful in reducing the impedance of the connecting line 20. Furthermore, the thicker second line segment 22 can improve the flatness of the surface of the second line segment 22 facing away from the designated side surface 13A of the substrate 10, thereby improving the quality of the connecting line 20.

[0327] In addition, since the third line segment 23 is long and thin, it is helpful to reduce the difficulty of manufacturing the third line segment 23.

[0328] When the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is equal to or close to 0.8, the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is larger, that is, the thickness of the second line segment 22 is thicker than the thickness of the first line segment 21.

[0329] At this point, when the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is equal to or close to 0.8, the thickness of the second line segment 22 is thinner than when the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is equal to 0.3. This helps to reduce the difficulty of removing the corresponding mask when patterning the second line segment 22 of the connecting line 20. In addition, the surface flatness of the second line segment 22 facing away from the designated side surface 13A of the substrate 10 can be improved, thereby improving the quality of the connecting line 20.

[0330] In addition, the third line segment 23 is thicker, which can further reduce the overall impedance of the connecting line 20 .

[0331] For example, in the same connecting line 20 , the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is approximately 0.3, 0.4, 0.5, 0.6, 0.7, or 0.8. However, the embodiments of the present disclosure are not limited thereto.

[0332] It should be noted that the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is approximately 0.5. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 fluctuates within the range of ±10%×0.5, it can also be considered that the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 satisfies 0.5.

[0333] In some embodiments, as shown in FIG19 , in the same connecting line 20 , the ratio of the thickness of the first line segment 21 to the thickness of the second line segment 22 is in the range of 0.3 to 0.8, and the ratio of the thickness of the third line segment 23 to the thickness of the second line segment 22 is in the range of 0.3 to 0.8.

[0334] In this case, the difficulty of patterning the first and third line segments 21, 23 can be reduced, and the surface flatness of the second line segment 22 on the side facing away from the designated side surface 13A of the substrate 10 can be improved. Furthermore, the impedance of the connecting wire 20 can be reduced, making it easier to carry high-current signals and improving the applicability of the wiring substrate 100.

[0335] In some embodiments, as shown in FIG. 19 , the thickness of the second line segment 22 ranges from 0.9 μm to 5 μm.

[0336] When the thickness of the second line segment 22 is equal to or close to 0.9 μm, the difficulty of patterning the second line segment 22 can be reduced, and the surface flatness of the second line segment 22 on the side away from the set side surface 13A of the substrate 10 can be improved; and the impedance of the connecting line 20 can also be reduced to a certain extent.

[0337] When the thickness of the second line segment 22 is equal to or close to 5 μm, the flatness of the surface of the second line segment 22 facing away from the designated side surface 13A of the substrate 10 can be improved, and the impedance of the connecting line 20 can be reduced. In addition, the process requirements for patterning the second line segment 22 can be met.

[0338] In some examples, the thickness of the second line segment 22 ranges from 2 μm to 4 μm. When the thickness of the second line segment 22 is within the range of 2 μm to 4 μm, the surface flatness of the second line segment 22 facing away from the predetermined side surface 13A of the substrate 10 can be improved, while also reducing impedance.

[0339] For example, the thickness of the second line segment 22 is approximately any one of 0.9 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, or 5 μm. However, the present disclosure is not limited thereto.

[0340] It should be noted that the thickness of the second line segment 22 is approximately 3 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness of the second line segment 22 can also be considered to be equal to 3 μm when the thickness of the second line segment 22 fluctuates within the range of ±10% × 3 μm.

[0341] In some embodiments, as shown in FIG. 19 , the thickness of the first line segment 21 ranges from 0.6 μm to 2 μm.

[0342] When the thickness of the first line segment 21 is equal to or close to 0.6 μm, the first line segment 21 is thin, which helps to reduce the difficulty of patterning multiple first line segments 21. In addition, the thickness of the first line segment 21 also satisfies the requirement that the impedance of the connecting line 20 is not too high.

[0343] When the thickness of the first line segment 21 is equal to or close to 2 μm, the thickness of the first line segment 21 is thick, which is beneficial to reducing the impedance of the connecting line 20 and also meets the process requirements when patterning the first line segment 21 .

[0344] In some examples, the thickness of the first line segment 21 ranges from 1 μm to 1.5 μm.

[0345] When the thickness of the first line segment 21 is within the range of 1 μm to 1.5 μm, it can not only help reduce the impedance of the connecting line 20 , but also meet the process requirements when patterning the first line segment 21 .

[0346] For example, the thickness of the first line segment 21 is approximately any one of 0.6 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm. However, the embodiment of the present disclosure is not limited thereto.

[0347] It should be noted that the thickness of the first line segment 21 is approximately 0.8 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness of the first line segment 21 can also be considered to be equal to 0.8 μm when the thickness fluctuates within the range of ±10% × 0.8 μm.

[0348] In some embodiments, as shown in FIG. 19 , the thickness of the third line segment 23 ranges from 0.6 μm to 2 μm.

[0349] When the thickness of the third line segment 23 is equal to or close to 0.6 μm, the thickness of the third line segment 23 is relatively thin, which helps to reduce the difficulty of patterning multiple third line segments 23. In addition, the thickness of the third line segment 23 also satisfies the requirement that the impedance of the connecting line 20 is not too high.

[0350] When the thickness of the third line segment 23 is equal to or close to 2 μm, the thickness of the third line segment 23 is thick, which is beneficial to reducing the impedance of the connecting line 20 and also meets the process requirements when patterning the third line segment 23 .

[0351] In some examples, the thickness of the third line segment 23 ranges from 1 μm to 1.5 μm.

[0352] When the thickness of the third line segment 23 is within the range of 1 μm to 1.5 μm, it can not only help reduce the impedance of the connecting line 20 , but also meet the process requirements when patterning the third line segment 23 .

[0353] For example, the thickness of the third line segment 23 is approximately any one of 0.6 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm. However, the embodiment of the present disclosure is not limited thereto.

[0354] It should be noted that the thickness of the third line segment 23 is approximately 0.8 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), the thickness of the third line segment 23 can also be considered to be equal to 0.8 μm when the thickness fluctuates within the range of ±10% × 0.8 μm.

[0355] The above embodiment, combined with the relevant drawings, primarily describes the structure of the connecting wires 20 in the wiring substrate 100. Based on this structure of the connecting wires 20, a single film-forming process can be used during the fabrication of the wiring substrate 100 to pattern multiple connecting wires 20 extending from the first major surface 11 through the designated side surface 13A to the second major surface 12. The following details how to form multiple connecting wires 20 using a single film-forming process during the fabrication of the wiring substrate 100, combined with the accompanying drawings. First, the mask assembly 400 used during the fabrication of the wiring substrate 100 will be described with reference to the relevant drawings.

[0356] In some embodiments, as shown in FIG19 , a transition side surface 14 is further provided between the set side surface 13A of the substrate 10 and the first main surface 11 or the second main surface 12. The substrate 10 has a sudden edge and a sharp corner when the boundary of the set side surface 13A and the first main surface 11 directly coincide and the two are perpendicular to each other. With such a configuration, the transition side surface 14 can be used to prevent sudden edges and sharp corners from being formed on the substrate 10, thereby preventing the sudden edges and sharp corners of the substrate 10 from being damaged by external forces during transportation or storage, thereby reducing the quality of the wiring substrate 100. Furthermore, it can also facilitate the subsequent attachment of the mask assembly, thereby preventing the sudden edges and sharp corners on the substrate 10 from damaging the mask assembly, thereby reducing the accuracy of the mask assembly.

[0357] In some embodiments, as shown in conjunction with FIG. 18 and FIG. 19 , when the substrate 10 includes a transition side surface 14 , the transition portion 24 of the connection line 20 may be located on the transition side surface 14 of the substrate 10 .

[0358] The transition side surface 14 between the set side surface 13A and the first main surface 11 is defined as a first transition side surface 141 . At this time, the first transition portion 241 of the connecting line 20 is located on the first transition side surface 141 .

[0359] Such a configuration can facilitate the first transition portion 241 to be in contact and connected with the first line segment 21 on the first major surface 11 and the second line segment 22 on the position setting side surface 13A.

[0360] The transition side surface 14 between the side surface 13A and the second main surface 12 is defined as a second transition side surface 142 . At this time, the second transition portion 242 of the connecting line 20 is located on the second transition side surface 142 .

[0361] Such a configuration can facilitate the second transition portion 242 to be in contact and connected with the third line segment 23 on the second major surface 12 and the second line segment 22 on the position setting side surface 13A.

[0362] FIG. 20 is a structural diagram of a mask assembly according to some embodiments, and FIG. 21 is a cross-sectional view taken along line VV′ in FIG. 20 .

[0363] Some embodiments of the present disclosure provide a mask assembly 400 for use with the wiring substrate 100 shown in Figures 7 to 10. As shown in Figures 20 and 21 , the mask assembly 400 includes a carrier film 410 and an organic photosensitive material layer 420 located on the carrier film 410.

[0364] In some examples, the carrier film 410 may be made of polyethylene terephthalate (PET) or polypropylene (PP). Using at least one of these materials to form the carrier film 410 provides the carrier film 410 with sufficient support and flexibility to facilitate storage and transportation of the mask assembly 400.

[0365] In some embodiments, as shown in FIG. 20 and FIG. 21 , the thickness of the carrier film 410 ranges from 25 μm to 75 μm.

[0366] When the thickness of the carrier film 410 is equal to or close to 25 μm, the carrier film 410 is thinner and can meet the supporting force requirement while having good bendability to facilitate subsequent bonding with the wiring substrate 100 .

[0367] When the thickness of the carrier film 410 is equal to or close to 75 μm, the carrier film 410 is thicker and can meet the bending requirements while having better supporting force to support the organic photosensitive material layer 420 formed on its surface.

[0368] In some examples, the thickness of the carrier film 410 ranges from 30 μm to 50 μm.

[0369] When the thickness of the carrier film 410 is within the range of 30 μm to 50 μm, the carrier film 410 can have both good supporting force and good bendability, thereby improving the applicability of the mask assembly 400 .

[0370] For example, the thickness of the carrier film 410 is about 25 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, or 75 μm. However, the present disclosure is not limited thereto.

[0371] Taking the carrier film 410 having a thickness of about 30 μm as an example, the carrier film 410 can support the organic photosensitive material layer 420 and meet the bendability requirements of the mask assembly 400 .

[0372] It should be noted that due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the thickness of the carrier film 410 fluctuates within the range of ±10%×30μm, it can also be considered that the thickness of the carrier film 410 satisfies 30μm.

[0373] In some embodiments, as shown in Figures 20 and 21 , the material of the organic photosensitive material layer 420 can include at least one of a resin, a polyol ester, and a methacrylate photopolymer. Furthermore, at least one of a photoinitiator, a plasticizer, and a tackifier can be added to the material of the organic photosensitive material layer 420. This allows the organic photosensitive material layer 420 to have both good photosensitivity and good adhesion, facilitating subsequent bonding to the wiring substrate.

[0374] In some embodiments, as shown in FIG. 20 and FIG. 21 , the thickness of the organic photosensitive material layer 420 ranges from 25 μm to 50 μm.

[0375] When the thickness of the organic photosensitive material layer 420 is equal to or close to 25 μm, the organic photosensitive material layer 420 is relatively thin, which can improve the resolution of the patterning of the organic photosensitive material layer 420. In other words, the precision of the hollow area K formed in the organic photosensitive material layer 420 can be improved, thereby improving the precision of the mask assembly 400. In addition, since the thickness of the organic photosensitive material layer 420 is relatively thin, it can also facilitate the lamination of the mask assembly 400 to the wiring substrate.

[0376] When the thickness of the organic photosensitive material layer 420 is equal to or close to 50 μm, the thickness of the organic photosensitive material layer 420 is relatively thick, and the organic photosensitive material layer 420 has good support strength, which is convenient for storage and transportation. In addition, the mask assembly 400 can also meet the precision requirements of the hollow area K formed in the organic photosensitive material layer 420.

[0377] In some examples, the thickness of the organic photosensitive material layer 420 ranges from 25 μm to 40 μm.

[0378] When the thickness of the organic photosensitive material layer 420 is within the range of 25 μm to 40 μm, the organic photosensitive material layer 420 can not only meet the precision requirements of the hollow area K formed therein, but also facilitate the lamination of the mask assembly 400 and the wiring substrate.

[0379] For example, the thickness of the organic photosensitive material layer 420 is about 25 μm, 28 μm, 30 μm, 32 μm, 35 μm, 38 μm, 40 μm, 42 μm, 45 μm, 48 μm or 50 μm, but the present disclosure is not limited thereto.

[0380] It should be noted that the thickness of the organic photosensitive material layer 420 is approximately 28 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), when the thickness of the organic photosensitive material layer 420 fluctuates within the range of ±10% × 28 μm, it can be considered that the thickness of the organic photosensitive material layer 420 is equal to 28 μm.

[0381] In some examples, as shown in conjunction with FIG20 and FIG21 , the organic photosensitive material layer 420 includes a plurality of hollow areas K. In the extension direction of any hollow area K, the hollow area K includes a first hollow portion K1, a second hollow portion K2, and a third hollow portion K3 that are sequentially connected. The third hollow portion K3 in any hollow area K gradually approaches the second central axis O2 of the mask assembly from a side close to the second hollow portion K2 to a side away from the second hollow portion K2. The second central axis O2 is perpendicular to the arrangement direction (second direction Y) of the plurality of hollow areas K and is also perpendicular to the thickness direction (third direction Z) of the carrier film 410.

[0382] When the wiring substrate 100 shown in Figures 7 to 10 is manufactured using the mask assembly 400, a connection line 20 is formed through a hollow portion K. For any connection line 20, a first line segment 21 of the connection line 20 located on the first main surface 11 of the substrate 10 can be formed through the first hollow portion K1 of the hollow region K, a second line segment 22 of the connection line 20 located on the designated side surface 13A of the substrate 10 can be formed through the second hollow portion K2 of the hollow region K, and a third line segment 23 of the connection line 20 located on the second main surface 12 of the substrate 10 can be formed through the third hollow portion K3 of the hollow region K.

[0383] Based on this, various portions of the connection line 20 can be simultaneously formed on the first main surface 11, the designated side surface 13A, and the second main surface 12 of the substrate 10 using a single film forming process. In other words, a plurality of connection lines 20 extending from the first main surface 11 through the designated side surface 13A to the second main surface 12 can be simultaneously formed on the substrate 10 of the wiring substrate 100 using a single film forming process.

[0384] Compared to the related art process for manufacturing wiring substrate 100 shown in Figures 4 and 6 , wiring substrate 100 does not require wiring design and fabrication on both first and second main surfaces 11 and 12 of substrate 10. This reduces the reliability issues associated with requiring wiring design and fabrication on both surfaces, thereby improving the quality of wiring substrate 100. Furthermore, the simple structure of wiring substrate 100 facilitates cost reduction and mass production.

[0385] In some examples, as shown in FIG. 20 and FIG. 21 , any hollow region K has multiple cross-sections on a plane parallel to the carrier film 410, and the cross-sectional area of ​​the cross-section closest to the carrier film 410 is smaller than the cross-sectional area of ​​the cross-section farthest from the carrier film 410. This is equivalent to setting the opening area of ​​any hollow region K close to the carrier film 410 to be smaller than the opening area on the side away from the carrier film 410.

[0386] With the above structure, when the mask assembly 400 is used to manufacture the wiring substrate 100, it is possible to facilitate patterning of multiple connecting lines 20 in the wiring substrate 100, thereby enabling a single film formation process to simultaneously form multiple connecting lines 20 extending from the first main surface 11 through the designated side surface 13A to the second main surface 12 on the substrate 10 of the wiring substrate 100. Therefore, wiring design and fabrication only need to be performed on the first main surface of the wiring substrate 100, which is beneficial for improving the reliability of the resulting wiring substrate.

[0387] In some embodiments, the mask assembly 400 further includes a release film. The release film may be located on the side of the organic photosensitive material layer 420 facing away from the carrier film 410. In other words, the organic photosensitive material layer 420 may be sandwiched between the carrier film 410 and the release film.

[0388] Based on this, the release film can be used to protect the organic photosensitive material layer 420 so as to facilitate storage and transportation of the organic photosensitive material layer 420 .

[0389] It should be noted that when manufacturing the mask assembly 400, an organic photosensitive material layer 420 can be formed on the carrier film 410 and patterned to form a plurality of hollow regions K. After the plurality of hollow regions K are formed on the organic photosensitive material layer 420, a release film is placed on the side of the organic photosensitive material layer 420 facing away from the carrier film 410.

[0390] When the mask assembly 400 is subsequently bonded to the wiring substrate, the release film in the mask assembly 400 can be removed first to expose the organic photosensitive material layer 420 so that the side of the organic photosensitive material layer 420 facing away from the carrier film 410 can be bonded to the wiring substrate.

[0391] In some embodiments, the release film may be made of polyethylene (PE), which has good support and corrosion resistance and can protect the organic photosensitive material layer 420 to facilitate storage and transportation of the mask assembly 400.

[0392] In some examples, the thickness of the release film ranges from 16 μm to 25 μm.

[0393] When the thickness of the release film is within the range of 16 μm to 25 μm, the release film can not only effectively protect the organic photosensitive material layer 420 , but also be easily torn off from the surface of the organic photosensitive material layer 420 .

[0394] For example, the thickness of the release film is about 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, or 25 μm. However, the embodiments of the present disclosure are not limited thereto.

[0395] It should be noted that the release film thickness is approximately 18 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), the release film thickness can be considered to be 18 μm when it fluctuates within the range of ±10% × 18 μm.

[0396] In some embodiments, as shown in Figure 20, the third hollow portion K3 includes a first hollow sub-portion K31, and the third hollow sub-portion K31 is close to the second central axis O2 of the mask assembly 400 from its side close to the second hollow portion K2 to the side away from the second hollow portion K2. The second central axis O2 is perpendicular to the arrangement direction of the multiple hollow areas K (second direction Y), and the second central axis O2 is perpendicular to the thickness direction (third direction) Z of the carrier film 410.

[0397] Based on this, when using mask assembly 400 to manufacture the wiring substrate 100 shown in Figures 7 to 10, a fan-out portion 231 can be formed through the first hollowed-out sub-portion K31 within a third hollowed-out portion K3. Consequently, multiple connecting wires 20 having fan-out portions 231 can be simultaneously formed on the wiring substrate 100 using a single film formation process. Furthermore, the problem of lower wiring substrate reliability caused by the need to design and manufacture wiring on both surfaces of the wiring substrate 100 can be reduced, thereby improving the quality of the wiring substrate 100.

[0398] Due to unavoidable process errors when bonding the mask assembly 400 to the substrate 10 in the wiring substrate 100, the fan-out portion 231 formed on the substrate 10 through the first hollow sub-portion K31 of the third hollow portion K3 may be offset to the set side 13A.

[0399] Based on this, in some examples, as shown in FIG20 , the third hollow portion K3 further includes a second sub-hollow portion K32, which is used to connect the second hollow portion K2 and the first hollow sub-portion K31. The second sub-hollow portion K32 extends in the same direction as the second hollow portion K2.

[0400] Therefore, the third hollow portion K3 is also provided with a second sub-hollow portion K32 that is consistent with the extension direction of the second hollow portion K2. Even if a fitting error occurs, the lead-out portion 232 formed on the substrate 10 via the second sub-hollow portion K32 is offset to the set side surface 13A. And since the set side surface 13A is flattened and spread out to the plane where the second main surface 12 is located, the extension direction of the lead-out portion 232 is consistent with the extension direction of the second line segment 22. Therefore, even if the lead-out portion 232 is offset to the set side surface 13A, it will not cause a more obvious impact on the trend of the connecting line 20 on the set side surface 13A. In addition, due to the existence of the second sub-hollow portion K32, it is beneficial to reduce the probability of the fan-out portion 231 formed on the substrate 10 via the first hollow sub-portion K31 of the third hollow portion K3 being offset to the set side surface 13A.

[0401] In some examples, as shown in FIG. 20 , the third hollow portion K3 further includes a third sub-hollow portion K33 , and the third sub-hollow portion K33 is located on a side of the first hollow sub-portion K31 away from the second hollow portion K2 .

[0402] When using mask assembly 400 to fabricate wiring substrate 100 as shown in Figures 7 to 10 , a binding portion 233 can be formed via a third sub-hollow portion K33 within a third hollow portion K3. This allows for the simultaneous formation of multiple connecting wires 20 having fan-out portions 231 and binding portions 233 within wiring substrate 100 using a single film formation process. This can further reduce the reliability issues associated with requiring wiring design and fabrication on both surfaces of wiring substrate 100, thereby improving the quality of wiring substrate 100.

[0403] It should be noted that the lengths of the first hollow area K1, the second hollow area K2, and the third hollow area K3 in the mask assembly 400 can be adjusted based on the desired length of the connecting line 20 to be formed, thereby improving the applicability of the mask assembly 400. Furthermore, the lengths of the first sub-hollow portion K31, the second sub-hollow portion K32, and the third sub-hollow portion K33 in the third hollow area K3 can also be adjusted based on the desired structure of the connecting line 20 to be formed, thereby improving the applicability of the mask assembly 400.

[0404] The above embodiment mainly introduces the structure of the mask assembly 400 in conjunction with the relevant drawings. The following will introduce how to use the mask assembly 400 to manufacture the wiring substrate 100 in conjunction with the relevant drawings.

[0405] Figure 22 is a flow chart of a wiring substrate manufacturing method according to some embodiments, Figure 23 is a structural diagram corresponding to step S2 in Figure 22, Figure 24 is another structural diagram corresponding to step S2 in Figure 22, Figure 25 is another structural diagram corresponding to step S2 in Figure 22, Figure 26 is another structural diagram corresponding to step S2 in Figure 22, Figure 27 is a structural diagram corresponding to step S3 in Figure 22, Figure 28 is another structural diagram corresponding to step S3 in Figure 22, and Figure 29 is another structural diagram corresponding to step S3 in Figure 22.

[0406] Based on this, some embodiments of the present disclosure provide a method for manufacturing a wiring substrate 100. As shown in Figures 22 to 27, the method for manufacturing the wiring substrate 100 includes: S1: providing a substrate 10. The substrate 10 includes a first main surface 11 and a second main surface 12 that are relatively arranged in the thickness direction of the substrate 10, and a side surface 13 located between the first main surface 11 and the second main surface 12. The side surface 13 is used to connect to the first main surface 11 and the second main surface 12. The multiple side surfaces 13 include a set side surface 13A corresponding to the peripheral area SA. It should be noted that the "set side surface S31" refers to the side surface 13 corresponding to the peripheral area SA among the multiple side surfaces 13 of the substrate 10.

[0407] In some examples, before step S2 , signal lines may be formed on the first main surface 11 of the substrate 10 , wherein the signal lines may be used to electrically connect devices in the device region of the wiring substrate 100 with the connection lines.

[0408] As shown in Figures 23 to 26 , S2: The side of the organic photosensitive material layer 420 in the mask assembly 400 facing away from the carrier film 410 is bonded to the substrate 10. The mask assembly 400 extends from the first major surface 11 through the designated side surface 13A to the second major surface 12. The carrier film 410 in the mask assembly 400 is removed, exposing the organic photosensitive material layer 420.

[0409] Any hollow area K in the organic photosensitive material layer 420 can be extended from the first main surface 11 through the designated side surface 13A to the second main surface 12. A first hollow portion K1 of the hollow area K is located on the first main surface 11 of the substrate 10, a second hollow portion K2 of the hollow area K is located on the designated side surface 13A of the substrate 10, and a third hollow portion K3 of the hollow area K is located on the second main surface 12 of the substrate 10.

[0410] In step S2 , when the mask assembly 400 is attached to the substrate 10 , the organic photosensitive material layer 420 is disposed between the carrier film 410 and the substrate 10 of the wiring substrate 100 .

[0411] At this time, the mask assembly 400 is placed upside down on the substrate 10 of the wiring substrate 100. The hollow area K in the organic photosensitive material layer 420 is close to the substrate 10 of the wiring substrate 100 and is away from the carrier film 410.

[0412] Since there are multiple cross sections on a plane parallel to the carrier film 410, the cross-sectional area of ​​the side closest to the carrier film 410 is smaller than the cross-sectional area of ​​the side farthest from the carrier film 410. This is equivalent to setting the opening area of ​​any hollow area K close to the carrier film 410 to be smaller than the opening area away from the carrier film 410.

[0413] Based on this, any one of the multiple hollow regions K has multiple cross-sections on a plane parallel to the substrate 10, and the cross-sectional area of ​​the side closest to the substrate 10 among the multiple cross-sections is larger than the cross-sectional area of ​​the side farthest from the substrate 10. In other words, the opening area of ​​the hollow region K on the side of the substrate 10 close to the wiring substrate 100 is larger than the opening area on the side of the substrate 10 far away from the wiring substrate 100. In this case, the hollow region K in the organic photosensitive material layer 420 cooperates with the substrate 10 to form a groove that is "narrow at the top and wide at the bottom."

[0414] In some examples, as shown in FIG23 , in step S2 , the substrate 10 of the wiring substrate 100 can be placed on a heating platform 500 and heated by the heating platform 500. Therefore, when the side of the organic photosensitive material layer 420 facing away from the carrier film 410 is brought into contact with the substrate 10, the substrate 10 can transfer heat to the organic photosensitive material layer 420. The organic photosensitive material layer 420 can have a certain degree of viscosity due to its material properties, thereby enabling the side of the organic photosensitive material layer 420 facing away from the carrier film 410 to be bonded to the substrate 10.

[0415] In some examples, the heating temperature provided by the heating platform 500 ranges from 80°C to 170°C.

[0416] When the heating temperature provided by the heating platform 500 is equal to or close to 80°C, the temperature of the substrate 10 is relatively low, which can also prevent the risk of other devices on the substrate 10 being damaged by high temperature. In addition, the organic photosensitive material layer 420 can also have a certain degree of viscosity, which can meet the requirements of laminating the organic photosensitive material layer 420 to the substrate 10.

[0417] When the heating temperature provided by the heating platform 500 is equal to or close to 170° C., the organic photosensitive material layer 420 can have a higher viscosity to fix the organic photosensitive material layer 420 to the substrate 10. In addition, other devices on the substrate 10 will not be damaged by high temperature.

[0418] In the example, the heating temperature provided by the heating platform 500 is approximately any one of 80° C., 100° C., 120° C., 150° C., or 170° C. However, the embodiments of the present disclosure are not limited thereto.

[0419] It should be noted that the heating temperature provided by the heating platform 500 is approximately 150°C. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the heating temperature provided by the heating platform 500 fluctuates within the range of ±10% × 150°C, it can also be considered that the heating temperature provided by the heating platform 500 is equal to 150°C.

[0420] In some examples, in step S2 , after the substrate 10 is heated by the heating platform 500 , the side of the organic photosensitive material layer 420 facing away from the carrier film 410 may be laminated to the substrate 10 by rolling.

[0421] For example, as shown in FIG23 , the roller 600 can be pushed to roll along the first major surface 11, the set side surface 13A, and the second major surface 12 of the substrate 10 to apply force to the organic photosensitive material layer 420 so that the side of the organic photosensitive material layer 420 facing away from the carrier film 410 is in contact with the substrate 10. However, the embodiments of the present disclosure are not limited thereto.

[0422] As shown in FIG. 27 , S3 : forming a first metal layer G on the side of the organic photosensitive material layer 420 facing away from the substrate 10 through a sputtering process.

[0423] In step S4, a portion of the first metal layer G is blocked by the organic photosensitive material layer 420 and formed on the organic photosensitive material layer 420, while another portion of the first metal layer G is directly formed on the substrate 10 due to the presence of the hollow region K. The first metal layer G formed on the organic photosensitive material layer 420 is defined as a first portion G1 of the first metal layer G, and the first metal layer G formed on the substrate 10 via the hollow region K is defined as a second portion G2 of the first metal layer G.

[0424] However, due to the "narrow at the top and wide at the bottom" structure of the groove, which is not perpendicular to the substrate, the thickness of the first portion of the first metal layer 440 formed in the groove is relatively thin at the end close to the organic photosensitive material layer 420, and there is a gap between the connecting wire 20 and the organic photosensitive material layer 420. In other words, the first portion G1 of the first metal layer G and the second portion G2 of the first metal layer G are not in direct contact, and there is a gap between them.

[0425] Based on this, the gap can be used to remove the organic photosensitive material layer 420 and the first portion G1 of the first metal layer G on the organic photosensitive material layer 420 , leaving the second portion G2 of the first metal layer G to be patterned into a plurality of connecting lines 20 .

[0426] In some examples, in step S3 , the substrate is placed in a sputtering chamber having a self-transferring platform, and a metal material is sputtered on the first main surface 11 , the set side surface 13A, and the second main surface 12 of the substrate 10 to form a first metal layer G.

[0427] When forming the first metal layer G, the thickness of the first metal layer G located on the set side 13A can be made greater than the thickness of the first metal layer G on the first main surface 11, and the thickness of the first metal layer G located on the set side 13A can be made greater than the thickness of the first metal layer G on the second main surface 12.

[0428] The above structure is conducive to reducing the low surface flatness of the first metal layer G located on the designated side surface 13A of the substrate 10. In addition, since the first metal layer G located on the designated side surface 13A of the substrate 10 is relatively short, increasing its thickness will not affect the difficulty of removing the organic photosensitive material layer 420 at this location.

[0429] In some examples, after forming the first metal layer G, an etching process can be used to remove the organic photosensitive material layer 420 and the first portion G1 of the first metal layer G located on the organic photosensitive material layer 420, leaving the second portion G2 of the first metal layer G to be patterned into multiple connecting lines 20.

[0430] For example, after forming the first metal layer G, it can be immersed in an etching solution. In this case, the etching solution can contact and react with the organic photosensitive material layer 420 through the gap between the first portion G1 of the first metal layer G and the second portion G2 of the first metal layer G, thereby peeling off the organic photosensitive material layer 420.

[0431] The etching solution may include at least one of a weak base or weak acid solution such as alcohol, potassium hydroxide (KOH), sodium hydroxide (NaOH), etc. However, the embodiments of the present disclosure are not limited thereto.

[0432] In some other embodiments, ultrasonic wave may be used to remove the organic photosensitive material layer 420 and the first portion G1 of the first metal layer G on the organic photosensitive material layer 420 .

[0433] In some examples, in step S2 , the side of the organic photosensitive material layer 420 in the mask assembly 400 facing away from the carrier film 410 may be attached to the substrate 10 via an adhesive layer.

[0434] Based on this, in step S3, after forming the first metal layer G, the first part G1 of the first metal layer G located on the organic photosensitive material layer 420 and the organic photosensitive material layer 420 can be torn off, and the remaining second part G2 of the first metal layer G can be patterned into multiple connecting lines 20.

[0435] As shown in FIG. 28 and FIG. 29 , in some examples, after forming the first metal layer G, a minimum distance H is provided between the first metal layer G1 and the edge of the organic photosensitive material layer 420 , and the length of the minimum distance H is greater than or equal to 2 mm.

[0436] Such a setting can prevent the first metal layer G from being formed at a position other than the organic photosensitive material layer 420 when forming the first metal layer G, causing contamination of the wiring substrate 100 substrate and affecting the subsequent formation of other devices on the wiring substrate 100.

[0437] In summary, the mask assembly 400 used in the fabrication method of this embodiment has multiple cross-sections arranged on a plane parallel to the carrier film 410. The cross-sectional area of ​​the cross-section closest to the carrier film 410 is smaller than the cross-sectional area of ​​the cross-section furthest from the carrier film 410. Furthermore, when attaching the mask assembly 400 to the substrate 10 of the wiring substrate 100, the mask assembly 400 is placed upside down on the substrate 10 of the wiring substrate 100. This allows the opening area of ​​the hollow region K on the side closest to the substrate 10 of the wiring substrate 100 to be larger than the opening area on the side furthest from the substrate 10 of the wiring substrate 100. This allows the hollow region K in the organic photosensitive material layer 420 to cooperate with the substrate 10 to form a groove that is narrow at the top and wide at the bottom. Furthermore, when forming the first metal layer G1, a gap can be provided between the first part G1 of the first metal layer G and the second part G2 of the first metal layer G. The organic photosensitive material layer 420 and the first part G1 of the first metal layer G located on the organic photosensitive material layer 420 can be removed by utilizing the gap, and the remaining second part G2 of the first metal layer G can be patterned into a plurality of connecting lines 20.

[0438] Based on this, when manufacturing wiring substrate 100, multiple connection lines 20 extending from first main surface 11 through designated side surface 13A to second main surface 12 can be simultaneously formed on substrate 10 of wiring substrate 100 through a single film-forming process. Furthermore, there is no need to repeatedly flip wiring substrate 100, which helps reduce the reliability issues associated with designing and manufacturing wiring on both surfaces of wiring substrate 100 and improves the quality of wiring substrate 100.

[0439] In some embodiments, as shown in conjunction with FIG. 20 , FIG. 21 , and FIG. 16 , the organic photosensitive material layer 420 in the mask assembly 400 further includes a plurality of first photosensitive sub-sections 421 . The first photosensitive sub-sections 421 isolate two adjacent hollow regions K. The first photosensitive sub-sections 421 include a third surface 421A and a fourth surface 421B disposed opposite each other. The third surface 421A of the first photosensitive sub-section 421 is closer to the carrier film 410 than the fourth surface 421B of the first photosensitive sub-section 421.

[0440] Based on the structure of the aforementioned hollow area K, any hollow area K has multiple cross-sections on a plane parallel to the carrier film 410. The cross-sectional area of ​​the cross-section closest to the carrier film 410 is smaller than the cross-sectional area of ​​the cross-section farthest from the carrier film 410. In this case, the area of ​​the third surface 421A of the first photosensitive portion 421 can be larger than the area of ​​the fourth surface 421B of the first photosensitive portion 421.

[0441] Along the direction in which the multiple hollow areas K are arranged (first direction X), the first photosensitive portion 421 also includes two second side surfaces 421C arranged opposite to each other, and the second side surface 421C of the first photosensitive portion 421 is used to connect the third surface 421A and the fourth surface 421B of the second side surface 421C.

[0442] It should be noted that, along the direction in which the multiple hollow areas K are arranged (the first direction X), the space between two adjacent first photosensitive sections 421 is the hollow area K. That is, in two adjacent first photosensitive sections 421, the second side surface 421C of one first photosensitive section 421 close to the other first photosensitive section 421 can be understood as the interface between the hollow area and the first photosensitive section 421.

[0443] Based on this, since the relative positional relationship between the second side surface 421C of the first photosensitive portion 421 and the substrate 10 will change depending on the shape of the hollow area K, the shape of the hollow area K can be described based on the relative positional relationship between the second side surface 421C of the first photosensitive portion 421 and the substrate 10.

[0444] As shown in Figures 21 and 27, in some examples, any one of the multiple hollow areas K can be set to have multiple cross-sections on a plane parallel to the carrier film 410, and the cross-sectional area of ​​any two cross-sections among the multiple cross-sections that are relatively closer to the carrier film 410 is smaller than the cross-sectional area that is relatively farther away from the carrier film 410.

[0445] When using the mask assembly 400 to manufacture a wiring substrate, any one of the multiple hollow areas K has multiple cross-sections on a plane parallel to the substrate 10, and for any two of the multiple cross-sections, the cross-sectional area that is relatively closer to the carrier film 410 is larger than the cross-sectional area that is relatively farther away from the substrate 10.

[0446] As designed above, the second side surface 421C of the first photosensitive portion 421 is set obliquely on the substrate 10, and the extended surface of the second side surface 421C of the first photosensitive portion 421 intersects with the substrate 10 to form an acute angle.

[0447] Based on this, when the first metal layer G is formed on the first main surface 11, the set side surface 13A, and the second main surface 12 of the substrate 10, due to the structure of the hollow area K and its first photosensitive portion 421, the first metal layer G will be blocked by both ends of the first photosensitive portion 421, and the first metal layer G formed on the substrate 10 through the hollow area K (the second portion G2 of the first metal layer G) will not be able to contact the first metal layer G located on the first photosensitive portion 421 (the first portion G1 of the first metal layer G). In other words, a gap will be formed between the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G. Furthermore, when the organic photosensitive material layer 420 and the first portion G1 of the first metal layer G located on the organic photosensitive material layer 420 are subsequently removed, the gap can be used to break through the first metal layer G to prevent the first metal layer G from surrounding the organic photosensitive material layer 420, thereby preventing the organic photosensitive material layer 420 from being removed.

[0448] In some examples, any one of the plurality of hollow regions K may be configured to have a plurality of cross sections on a plane parallel to the carrier film 410 , wherein the cross section area is smaller as it is closer to the carrier film 410 .

[0449] In some embodiments, as shown in FIG20 , FIG21 , and FIG27 , the cross-sectional shape of any one of the plurality of hollow areas K on a plane perpendicular to its own extension direction is a trapezoid. That is, the cross-sectional shape of any one of the plurality of first photosensitive sub-sections 421 on a plane perpendicular to its own extension direction is a trapezoid.

[0450] In the mask assembly 400, the trapezoid corresponding to the first photosensitive portion 421 is a regular trapezoid, while the trapezoid corresponding to the hollow area K is an inverted trapezoid. When the mask assembly 400 is placed upside down on the substrate 10 of the wiring substrate, the trapezoid corresponding to the first photosensitive portion 421 is an inverted trapezoid, while the trapezoid corresponding to the hollow area K is a regular trapezoid.

[0451] In this arrangement, when a wiring substrate is manufactured using the mask assembly 400, that is, when the first metal layer G is formed on the first main surface 11, the set side surface 13A and the second main surface 12 of the substrate 10, the first metal layer G (the second part G2 of the first metal layer G) cannot completely cover the second side surface 421C of the first photosensitive portion 421, and the first metal layer G (the first part G1 of the first metal layer G) cannot completely cover the substrate 10 between the two first photosensitive portions 421.

[0452] As a result, the first portion G1 of the first metal layer G is disconnected from the second portion G2 of the first metal layer G, leaving a gap between the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G. Furthermore, when the organic photosensitive material layer 420 and the first portion G1 of the first metal layer G located on the organic photosensitive material layer 420 are subsequently removed, the gap can be used to break through the first metal layer G, preventing the first metal layer G from surrounding the organic photosensitive material layer 420 and making it impossible to remove the organic photosensitive material layer 420. This helps improve the reliability of the resulting wiring substrate.

[0453] In some embodiments, as shown in conjunction with Figures 20, 21, and 27, the extended surface of the second side surface 421C of the first photosensitive portion 421 intersects with the carrier film 410 to form a first angle α. The angle α can be set to a value in the range of 40° to 80°. When the mask assembly 400 is used to manufacture a wiring substrate, the angle formed by the extended surface of the second side surface 421C of the first photosensitive portion 421 and the substrate 10 is approximately equal to the first angle α. Figure 27 illustrates an example in which the extended surface of the second side surface 421C of the first photosensitive portion 421 intersects with the substrate 10 to form an angle equal to the first angle α.

[0454] When the first angle α is equal to or close to 40°, the angle formed between the second side surface 421C of the first photosensitive portion 421 and the carrier film 410 is smaller, resulting in a greater inclination of the second side surface 421C of the first photosensitive portion 421. This increases the difference between the opening size of the hollow region K on the side closest to the carrier film 410 and the opening size on the side further away from the carrier film 410.

[0455] Furthermore, when forming connecting lines on the wiring substrate 100 using the mask assembly 400 designed as described above, the thickness of the second portion G2 of the first metal layer G formed on the carrier film 410 through the hollow region K is made thinner on both sides of the line width direction. This increases the distance between the second portion G2 of the first metal layer G formed through the hollow region K and the first photosensitive portion 421, and increases the distance between the connecting lines 20 and the first portion G1 of the first metal layer G on the second side surface 421C of the first photosensitive portion 421. This makes it easier to remove the first photosensitive portion 421 and the first portion G1 of the first metal layer G on its surface, while retaining the second portion G2 of the first metal layer G formed through the hollow region K to form multiple connecting lines 20.

[0456] When the first angle α is equal to or approaches 80°, the angle formed between the second side surface 421C of the first photosensitive portion 421 and the carrier film 410 is larger, resulting in a smaller degree of inclination of the second side surface 421C of the first photosensitive portion 421. Furthermore, when forming connecting lines on the wiring substrate 100 using the mask assembly 400 designed as described above, the connection between the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G can be disconnected to facilitate removal of the first photosensitive portion 421. Furthermore, this can prevent the gap between the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G from being too large, which could lead to an excessively large spacing between the multiple connecting lines 20 subsequently formed, thereby reducing the total number of connecting lines 20.

[0457] In some examples, the first angle α ranges from 45° to 70°.

[0458] When the value of the first angle α is in the range of 45° to 70°, the connection between the second part G2 of the first metal layer G and the first part G1 of the first metal layer G can be disconnected to facilitate the removal of the first photosensitive part 421, and the requirement for the number of connecting lines 20 in the wiring substrate 100 can be met.

[0459] For example, the first angle α is approximately any one of 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, or 80°. However, the embodiments of the present disclosure are not limited thereto.

[0460] It should be noted that the first angle α is approximately 60°. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the first angle α fluctuates within the range of ±10% × 60°, it can also be considered that the first angle α is equal to 60°.

[0461] In some embodiments, as shown in FIG20 , FIG21 , and FIG27 , the length of the second side surface 421C along the direction in which the plurality of hollow regions are arranged (the first direction X) ranges from 6 μm to 25 μm. That is, the length of the orthographic projection of the second side surface 421C on the carrier film 410 along the direction in which the plurality of hollow regions are arranged (the first direction X) ranges from 6 μm to 25 μm.

[0462] When the length of the second side surface 421C is equal to or close to 6 μm along the direction in which the multiple hollow areas are arranged (the first direction X), the inclination of the second side surface 421C of the first photosensitive portion 421 is relatively small. Furthermore, when forming the connection lines of the wiring substrate 100 using the mask assembly 400 designed as above, it is also possible to disconnect the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G, so as to facilitate the removal of the first photosensitive portion 421. In addition, it is also possible to prevent the gap between the second portion G2 of the first metal layer G and the first portion G1 of the first metal layer G from being too large, which would result in an excessively large line spacing between the multiple connection lines 20 formed subsequently, thereby reducing the total number of connection lines 20.

[0463] When the length of the second side surface 421C along the direction in which the multiple hollow regions are arranged (the first direction X) is equal to or close to 25 μm, the second side surface 421C of the first photosensitive portion 421 is tilted more significantly. This increases the difference between the opening size of the hollow region K on the side closest to the carrier film 410 and the opening size on the side farther from the carrier film 410.

[0464] Furthermore, when forming connecting lines on the wiring substrate 100 using the mask assembly 400 designed as described above, the thickness of the second portion G2 of the first metal layer G formed on the substrate 10 through the hollow region K is made thinner on both sides of the line width direction. This increases the distance between the second portion G2 of the first metal layer G formed through the hollow region K and the first photosensitive portion 421, and increases the distance between the connecting line 20 and the first portion G1 of the first metal layer G on the second side surface 421C of the first photosensitive portion 421. This makes it easier to remove the first photosensitive portion 421 and the first portion G1 of the first metal layer G on its surface, while retaining the second portion G2 of the first metal layer G formed through the hollow region K to form multiple connecting lines 20.

[0465] In some examples, along the direction in which the plurality of hollow regions are arranged (the first direction X), the length of the second side surface 421C of the first photosensitive portion 421 ranges from 8 μm to 15 μm. That is, the projected length of the second side surface 421C of the first photosensitive portion 421 on the substrate 10 ranges from 8 μm to 15 μm.

[0466] When the length of the second side surface 421C of the first photosensitive portion 421 is in the range of 8μm to 15μm along the direction in which the multiple hollow areas are arranged (the first direction X), the inclination degree of the second side surface 421C of the first photosensitive portion 421 can be better, which can disconnect the second part G2 of the first metal layer G and the first part G1 of the first metal layer G to facilitate the removal of the first photosensitive portion 421, and can also meet the requirement for the number of connecting lines 20 in the wiring substrate 100.

[0467] For example, along the direction in which the plurality of hollow regions are arranged (the first direction X), the length of the second side surface 421C of the first photosensitive portion 421 is approximately any one of 6 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 22 μm, or 25 μm. However, the present disclosure is not limited thereto.

[0468] It should be noted that, in the example described above, the length of the second side surface 421C of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) is approximately 10 μm. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, and measurement errors), when the length of the second side surface 421C of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) fluctuates within a range of ±10% × 10 μm, it can be considered that the length of the second side surface 421C of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) is equal to 10 μm.

[0469] In some embodiments, as shown in FIG. 20 , FIG. 21 and FIG. 27 , along the direction in which the plurality of hollow regions are arranged (the first direction X), the length of the first photosensitive portion 421 ranges from 49 μm to 88 μm.

[0470] When the length of the first photosensitive portion 421 is equal to or close to 49 μm, the line spacing between the plurality of connecting wires 20 can be made smaller, facilitating the installation of a greater number of connecting wires and improving the applicability of the wiring substrate 100. Furthermore, the inclined second side surface 421C can be formed on the first photosensitive portion 421.

[0471] When the length of the first photosensitive portion 421 is equal to or close to 88 μm, the spacing between the multiple connecting wires 20 can be increased, thereby preventing the multiple connecting wires 20 from shorting. In addition, the longer length of the first photosensitive portion 421 can increase the flexibility of the second side surface 421C of the first photosensitive portion 421.

[0472] For example, the length of the first photosensitive portion 421 is approximately 49 μm, 49.5 μm, 50 μm, 60 μm, 70 μm, 80 μm, 87.5 μm, or 88 μm. However, the present disclosure is not limited thereto.

[0473] It should be noted that the length of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) is approximately 49.5 μm is used as an example for description. Due to certain uncontrollable errors (such as manufacturing process errors, equipment accuracy, measurement errors, etc.), when the length of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) fluctuates within a range of ±10% × 49.5 μm, it can be considered that the length of the first photosensitive portion 421 along the direction in which the multiple hollow areas are arranged (the first direction X) is equal to 49.5 μm.

[0474] In some embodiments, as shown in Figures 20, 21 and 27, along the direction in which the multiple hollow areas are arranged (first direction X), the ratio of the length of the fourth surface 421B of the first photosensitive portion 421 to the thickness of the organic photosensitive material layer 420 is in the range of 1 to 2.

[0475] When the ratio of the length of the fourth surface 421B of the first photosensitive portion 421 to the thickness of the organic photosensitive material layer 420 is equal to or close to 1, the length of the fourth surface 421B of the first photosensitive portion 421 is shorter, which can reduce the line spacing between the multiple connecting wires 20, facilitate the installation of a larger number of connecting wires, and improve the applicability of the wiring substrate 100. In addition, it can also meet the requirements of forming an inclined second side surface 421C on the first photosensitive portion 421.

[0476] When the ratio of the length of the fourth surface 421B of the first photosensitive portion 421 to the thickness of the organic photosensitive material layer 420 is equal to or close to 2, the length of the fourth surface 421B of the first photosensitive portion 421 is longer, which can increase the line spacing between the multiple connecting wires 20 and prevent the multiple connecting wires 20 from shorting. In addition, the inclined second side surface 421C can also be formed on the first photosensitive portion 421.

[0477] In some examples, along the direction in which the plurality of hollow regions are arranged (the first direction X), a ratio of a length of the fourth surface 421B of the first photosensitive portion 421 to a thickness of the organic photosensitive material layer 420 ranges from 1.3 to 1.8.

[0478] When the ratio of the length of the fourth surface 421B of the first photosensitive portion 421 to the thickness of the organic photosensitive material layer 420 along the direction of arrangement of the multiple hollow areas (first direction X) is in the range of 1.3 to 1.8, the line spacing of the multiple connecting lines 20 formed subsequently can be moderate, meeting the requirement for the number of connecting lines 20 in the wiring substrate 100.

[0479] For example, in the direction in which the plurality of hollow regions are arranged (the first direction X), a ratio of a length of the fourth surface 421B of the first photosensitive portion 421 to a thickness of the organic photosensitive material layer 420 is approximately 1, 1.2, 1.4, 1.5, 1.6, 1.8, or 2. However, the present disclosure is not limited thereto.

[0480] In some embodiments, as shown in FIG. 20 , there is a first distance I between the hollow area K and the edge of the organic photosensitive material layer 420 , and the length of the first distance I is greater than or equal to 2 mm.

[0481] Such a configuration can prevent metal from being formed outside the organic photosensitive material layer 420 when forming multiple connecting lines 20, causing contamination of the wiring substrate 100 substrate and affecting the subsequent formation of other devices on the wiring substrate 100.

[0482] In some examples, in the extension direction of any hollow area K, there is a first interval I between the hollow area K and the edge of the organic photosensitive material layer 420, and the length of the first interval I is greater than or equal to 2 mm.

[0483] Such a setting can prevent metal from being formed at positions other than the organic photosensitive material layer 420 when forming multiple connecting lines 20, causing contamination of the wiring substrate 100 substrate, affecting the subsequent connection between the connecting lines and the circuit board, and affecting the subsequent formation of devices at other positions on the first main surface of the substrate.

[0484] In some examples, along the direction in which the plurality of hollow regions K are arranged, there is a first interval I between the hollow region K and the edge of the organic photosensitive material layer 420 , and the length of the first interval I is greater than or equal to 2 mm.

[0485] This arrangement can prevent metal from being formed at positions other than the organic photosensitive material layer 420 when forming a plurality of connection lines 20 , which would make it difficult to subsequently form other devices on the wiring substrate 100 .

[0486] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A wiring substrate, include: A substrate, comprising a first main surface and a second main surface arranged opposite to each other in a thickness direction of the substrate, and a side surface between the first main surface and the second main surface, wherein the side surface comprises a set side surface; A plurality of connection lines are located on the substrate, and the connection lines extend from the first main surface through the set side surface to the second main surface; Any one of the plurality of connection lines comprises: a first surface and a second surface that are arranged opposite to each other, the first surface is closer to the substrate than the second surface, and an area of ​​the first surface is larger than an area of ​​the second surface.

2. The wiring substrate according to claim 1, in, Any one of the plurality of connecting lines has a plurality of cross sections on a plane parallel to the substrate, and a cross-sectional area of ​​any two of the plurality of cross sections that is relatively closer to the substrate is smaller than a cross-sectional area that is relatively farther from the substrate.

3. The wiring substrate according to claim 1 or 2, in, Any one of the plurality of connecting lines has a trapezoidal cross-sectional shape on a plane perpendicular to its own extending direction.

4. The wiring substrate according to any one of claims 1 to 3, in, Along the line width direction of the connection line, the connection line includes two first side surfaces arranged opposite to each other, and the first side surfaces are used to connect the first surface and the second surface; The projection length of the orthographic projection of the first side surface on the substrate along the line width direction of the connecting line ranges from 6 μm to 25 μm.

5. The wiring substrate according to any one of claims 1 to 4, in, Any one of the plurality of connecting lines comprises: a first line segment, a second line segment and a third line segment are sequentially connected; the first line segment is located on the first main surface, the second line segment is located on the set side surface, and the third line segment is located on the second main surface; The second main surface has a fan-out area, and the length of the fan-out area ranges from 3mm to 20mm along the direction perpendicular to the arrangement of the multiple connecting lines; the third line segment includes a fan-out portion located in the fan-out area, and the fan-out portion gradually approaches the first central axis of the wiring substrate from one end close to the second line segment to the end far away from the second line segment, and the first central axis is perpendicular to the arrangement direction of the multiple connecting lines.

6. The wiring substrate according to claim 5, in, The length of the first line segment ranges from 0.15 mm to 0.4 mm.

7. The wiring substrate according to claim 5 or 6, in, The second main surface also has a lead-out area, and the lead-out area is located on a side of the fan-out area close to the set side surface; The third line segment further includes a lead-out portion located in the lead-out area, the lead-out portion is used to connect the second line segment and the fan-out portion, and the length of the lead-out portion ranges from 0.06 mm to 1 mm.

8. The wiring substrate according to claim 7, in, In any one of the plurality of connecting lines: an extending direction of the first line segment, an extending direction of the second line segment, and an extending direction of the lead-out portion that are sequentially connected are located in the same plane.

9. The wiring substrate according to any one of claims 5 to 8, in, The ratio of the thickness of the first line segment to the thickness of the second line segment is in the range of 0.3 to 0.8; and / or, The ratio of the thickness of the third line segment to the thickness of the second line segment ranges from 0.3 to 0.

8.

10. The wiring substrate according to any one of claims 5 to 9, in, The thickness of the second line segment ranges from 0.9 μm to 5 μm; The thickness of the first line segment ranges from 0.6 μm to 2 μm; and / or, The thickness of the third line segment ranges from 0.6 μm to 2 μm.

11. The wiring substrate according to any one of claims 1 to 10, in, Also includes: A plurality of first electrodes are provided, wherein the first electrodes are located on the first main surface close to the set side surface, and the first electrodes are electrically connected to a first line segment of the connecting line.

12. A mask assembly for manufacturing a plurality of connecting lines in a wiring substrate according to any one of claims 1 to 11, wherein the mask assembly include: Carrier film; An organic photosensitive material layer is located on one side of the carrier film; the organic photosensitive material layer includes a plurality of hollow areas, any one of the plurality of hollow areas has a plurality of cross sections on a plane parallel to the carrier film, and the cross-sectional area of ​​the plurality of cross sections closest to the carrier film is smaller than the cross-sectional area of ​​the plurality of cross sections farthest from the carrier film; In the extension direction of any one of the hollow areas, the hollow area includes a first hollow portion, a second hollow portion and a third hollow portion which are connected in sequence. The third hollow portion in any one of the hollow areas gradually approaches the second central axis of the mask assembly from the side close to the second hollow portion to the side away from the second hollow portion, and the second central axis is perpendicular to the arrangement direction of the multiple hollow areas.

13. The mask assembly according to claim 12, in, Any one of the plurality of hollow areas has a plurality of cross sections on a plane parallel to the carrier film, and any two of the plurality of cross sections have a cross section area that is relatively closer to the carrier film and smaller than a cross section area that is relatively farther from the carrier film.

14. The mask assembly according to claim 12 or 13, in, The cross-sectional shape of any one of the plurality of hollow areas on a plane perpendicular to its own extending direction is a trapezoid.

15. The mask assembly according to any one of claims 12 to 14, in, Along the direction in which the plurality of hollow areas are arranged, the organic photosensitive material layer further includes a first photosensitive sub-portion, wherein the first photosensitive sub-portion separates two adjacent hollow areas; Along the direction in which the multiple hollow areas are arranged, the first photosensitive portion includes two second side surfaces, and the second side surfaces intersect with the carrier film to form a first angle, and the value range of the first angle is 40° to 80°.

16. The mask assembly according to claim 15, in, The orthographic projection of the second side surface on the carrier film has a projection length in the direction along which the plurality of hollow regions are arranged in a range of 6 μm to 25 μm.

17. The mask assembly according to any one of claims 12 to 16, in, The thickness of the organic photosensitive material layer ranges from 25 μm to 50 μm.

18. The mask assembly according to any one of claims 12 to 17, in, In the extension direction of any hollow area, there is a first distance between the hollow area and the edge of the organic photosensitive material layer, and the length of the first distance is greater than or equal to 2 mm.

19. A back plate, include: Multiple functional elements; at least one circuit board; The wiring substrate according to any one of claims 1 to 11, wherein one end of a connection line in the wiring substrate is connected to the functional element, and the other end of the connection line is connected to the circuit board.

20. A display device, include: A backlight module, the backlight module comprising the back panel according to claim 19, the functional element comprising a light emitting diode; The liquid crystal display panel is located on the light-emitting side of the backlight module.

21. A display device, include: A display panel comprising at least one backplane as claimed in claim 19, wherein the functional element comprises a light emitting diode.

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