Complementary split ring-based 5g planar electromagnetic sensor, and measurement method

Abstract

A complementary split ring-based 5G planar electromagnetic sensor, and a measurement method. The 5G planar electromagnetic sensor comprises a ground wire GND layer, used for forming an equivalent circuit and making contact with a sample under test to measure a complex dielectric constant and a complex permeability of the sample; a dielectric layer, used for forming an LC-like resonant cavity; and a microstrip layer, used for transmitting a signal and enabling a signal output end to be matched with a load. The ground wire GND layer comprises a complementary split ring resonator structure formed by etching two circular rings, and a substrate integrated waveguide structure. By providing the ground wire GND layer, the dielectric layer, and the microstrip layer, the complex dielectric constant and the complex permeability of the sample under test are measured, and the measurement precision of the measured complex dielectric constant and the measured complex permeability is improved.

Description

A 5G planar electromagnetic sensor and measurement method based on mutual coupling ring gap Technical Field

[0001] The present invention belongs to the field of radio frequency and microwave engineering technology, and in particular relates to a 5G planar electromagnetic sensor based on a mutual coupling ring gap and a measurement method. Background Art

[0002] Complex permittivity and complex permeability are among the most important material parameters in RF and microwave engineering. The dielectric and magnetic properties of the materials used in microwave device substrates influence the response and performance of microwave planar circuits. To model complex microwave devices, it is essential to first measure the complex permittivity and complex permeability of the materials used in these substrates.

[0003] Therefore, accurately measuring a material's complex permittivity and complex permeability is a crucial task in RF and microwave engineering. Beyond microwave engineering, other fields such as food, healthcare, and agriculture also require precise measurements of complex permittivity and complex permeability. Complex permittivity includes the dielectric constant and the electrical loss tangent, while complex permeability includes the magnetic permeability and the magnetic loss tangent.

[0004] Few existing sensors can simultaneously measure complex permittivity and complex permeability. Furthermore, the measurement process presents challenges such as cumbersome equipment, low sensitivity, and difficulty measuring at high frequencies. Therefore, a 5G planar electromagnetic sensor and measurement method based on a mutually coupled ring gap are provided.

[0005] Summary of the Invention

[0006] The purpose of the present invention is to provide a 5G planar electromagnetic sensor and measurement method based on a mutually coupled ring gap, so as to achieve simultaneous measurement of the complex dielectric constant or complex magnetic permeability of a sample and improve the measurement accuracy of the complex dielectric constant and complex magnetic permeability.

[0007] To solve the above technical problems, the present invention is achieved through the following technical solutions:

[0008] As the first aspect provided by the present invention, the present invention is a 5G planar electromagnetic sensor based on a mutually coupled ring gap, comprising: a ground wire GND layer, which is used to form an equivalent circuit and measure the complex dielectric constant and complex magnetic permeability of the sample by contacting the sample under test; a dielectric layer, which is used to form an LC-like resonant cavity; a microstrip line layer, which is used to transmit signals and match the signal output end with the load; the ground wire GND layer includes a mutually coupled ring gap resonant structure composed of two circular ring etchings and a substrate integrated waveguide structure; wherein the openings of the two circular ring etchings are in the same direction, serving as the complex dielectric constant measurement area and the complex magnetic permeability measurement area; this structure forms a micro-variable equivalent circuit with the sample under test.

[0009] Furthermore, one of the two rings is an outer ring and the other is an inner ring;

[0010] The area outside the complex permeability measurement area has a large electric field intensity and a small magnetic field intensity, and serves as the complex dielectric constant measurement area;

[0011] The slit of the outer ring extends outward. The electric field strength in the outward extending area is small and the magnetic field strength is large, which serves as the complex magnetic permeability measurement area.

[0012] Furthermore, the ground GND layer is a rectangular metal etched with a double-ring mutual coupling ring seam structure;

[0013] The inner radius of the outer ring of the double-ring mutual coupling ring gap structure is 2.17 mm, and the outer radius is 2.38 mm.

[0014] The inner circle radius of the inner ring of the double-ring mutual coupling ring gap structure is 1.31 mm, and the outer circle radius is 1.12 mm.

[0015] Furthermore, the slits etched on the two rings are:

[0016] The outer ring is etched with a slit at the bottom end thereof which is parallel to and perpendicular to the microstrip line layer, and the slit width is 0.3 mm;

[0017] The inner ring is etched with a slot at the bottom end thereof which is parallel to and perpendicular to the microstrip line layer, and the slot width is 0.15 mm.

[0018] Furthermore, the thickness of the ground wire GND layer and the microstrip line layer is 0-0.02 mm, and the material of the ground wire GND layer (3) and the microstrip line layer is any one of gold, silver and copper, or a conductive material with the same conductivity as any one of gold, silver and copper.

[0019] Furthermore, in the complex magnetic permeability measurement area: the substrate integrated waveguides are arranged around the magnetic permeability area, and the diameter of each substrate integrated waveguide is 0.4 mm; the arrangement interval parallel to the complex magnetic permeability measurement area is 0.8 mm, and the arrangement interval perpendicular to the complex magnetic permeability measurement area is 0.5 mm.

[0020] Furthermore, the microstrip line layer is a microstrip line that passes longitudinally through the middle of the dielectric layer, and the size of the microstrip line layer is 20.6 mm×0.4 mm;

[0021] Two 50-ohm chip resistors are added to the microstrip line layer or a metal patch is integrated on the microstrip line layer;

[0022] The metal patch corresponds to the complex magnetic permeability measurement area of ​​the ground line GND layer (3), and the size of the metal patch is 2.6mm×0.9mm.

[0023] Furthermore, the size of the dielectric layer is 35 mm×26 mm×0.813 mm, and is allowed to fluctuate by 0.0015 mm based on the size. The material of the dielectric layer is RO4350 material with a dielectric constant of 3.66 and a loss tangent value of 0.004.

[0024] Furthermore, when used as a complex dielectric constant measurement sensor, the measurement frequency band is 2.99GHz-4.17GHz, and the effective measurement range is: sample objects with a dielectric constant of 1-10 and a loss tangent value of 0-0.1;

[0025] When used as a complex magnetic permeability measurement sensor, the measurement frequency band is 3.76GHz-4.17GHz, and the effective measurement range is: sample objects with a magnetic permeability of 1-2 and a magnetic loss tangent value of 0-0.5;

[0026] The operating frequency bands of the 5G planar electromagnetic sensor include the 5G n77, n78 and n79 frequency bands;

[0027] The complex permittivity includes the dielectric constant and the electric loss tangent, and the complex permeability includes the magnetic permeability and the magnetic loss tangent.

[0028] As a second aspect provided by the present invention, the present invention provides a method for measuring the complex dielectric constant and complex magnetic permeability of a 5G planar electromagnetic sensor based on a mutually coupled ring gap, the method being implemented based on the 5G planar electromagnetic sensor described in the first aspect, the method comprising the following steps:

[0029] Step S1: Measure the complex magnetic permeability of the sample under test:

[0030] Step S01: placing the sample of the object to be measured on the complex magnetic permeability measurement area;

[0031] Step S02: Under the resonance of the 3.5GHz-4.2GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling ring gap to obtain the transmission coefficient center frequency S 21 parametric curves;

[0032] Step S03: Determine S 21 Resonant frequency and insertion loss of parameter curves;

[0033] Step S04: determining the magnetic permeability of the sample according to the resonant frequency, and determining the magnetic loss tangent value of the sample according to the insertion loss;

[0034] Step S2: Measure the sample

[0035] Step S021: placing the sample to be measured on the complex dielectric constant measurement area;

[0036] Step S022: Under the resonance of the 2.8 GHz-4.2 GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling ring gap to obtain the transmission coefficient center frequency S 21 parametric curves;

[0037] Step S023: Determine the S 21 Resonant frequency and insertion loss of parameter curves;

[0038] Step S024: determining the dielectric constant of the sample under test according to the resonant frequency, and determining the electric loss tangent value of the sample under test according to the insertion loss.

[0039] The present invention has the following beneficial effects:

[0040] In the present invention, the ground wire GND layer is etched to form an equivalent circuit, and is in contact with the sample to be measured to measure the complex dielectric constant and complex magnetic permeability of the sample; the dielectric layer is used to form an LC-like resonant cavity; the microstrip line layer is used to transmit signals and match the signal output end with the load, thereby achieving simultaneous measurement of the complex dielectric constant or complex magnetic permeability of the sample and improving the measurement accuracy of the complex dielectric constant and complex magnetic permeability.

[0041] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0043] FIG1 is a three-dimensional structural diagram of a 5G planar electromagnetic sensor based on a mutual coupling ring gap according to the present invention;

[0044] FIG2 is a schematic diagram of the ground GND layer of a 5G planar electromagnetic sensor based on a mutual coupling ring gap;

[0045] FIG3 is a planar schematic diagram of a mutually coupled ring-slit resonant structure of a 5G planar electromagnetic sensor;

[0046] FIG4 is a flow chart of a method for measuring complex permittivity and complex permeability;

[0047] FIG5 is an equivalent circuit diagram of a mutually coupled ring-slit resonant structure;

[0048] FIG6 is a schematic diagram of the S21 parameter curve of complex magnetic permeability measured by a 5G planar electromagnetic sensor at resonance in the 3.76 GHz-4.17 GHz frequency band;

[0049] FIG7 is a schematic diagram of the S21 parameter curve of the complex dielectric constant measured by the 5G planar electromagnetic sensor under the resonance frequency band of 2.99 GHz-4.17 GHz;

[0050] FIG8 is a partially enlarged view of the structure of a 5G planar electromagnetic sensor based on a mutual coupling ring gap. DETAILED DESCRIPTION

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0052] In the description of the present invention, it should be understood that the terms "upper", "lower", "size", "top", "middle", "width", "side", "end", "bottom" and the like indicating orientation or positional relationship are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the components or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention.

[0053] Example 1:

[0054] As shown in Figures 1-2, the present invention is a 5G planar electromagnetic sensor based on a mutually coupled ring gap, including: a ground wire GND layer 3, which is used to form an equivalent circuit and measure the complex dielectric constant and complex magnetic permeability of the sample by contacting the sample under test; a dielectric layer 2, which is used to form an LC-like resonant cavity; a microstrip line layer 1, which is used to transmit signals and match the signal output end with the load; as shown in Figure 2, the ground wire GND layer 3 includes a mutually coupled ring gap resonant structure composed of two circular ring etchings and a substrate integrated waveguide structure; wherein the openings of the two circular ring etchings are in the same direction and serve as the complex dielectric constant measurement area and the complex magnetic permeability measurement area respectively; this structure forms a micro-variable equivalent circuit with the sample under test, as shown in Figure 5.

[0055] As an embodiment provided by the present invention, preferably, one of the two rings is an outer ring and the other is an inner ring;

[0056] The area outside the complex permeability measurement area has a large electric field intensity and a small magnetic field intensity, and serves as the complex dielectric constant measurement area;

[0057] The slit of the outer ring extends outward. The electric field strength in the outward extending area is small and the magnetic field strength is large, which serves as the complex magnetic permeability measurement area.

[0058] As an embodiment provided by the present invention, preferably, the ground GND layer 3 is a rectangular metal etched with a double-ring mutual coupling ring seam structure;

[0059] The inner radius of the outer ring of the double-ring mutual coupling ring gap structure is 2.17 mm, and the outer radius is 2.38 mm.

[0060] The inner circle radius of the inner ring of the double-ring mutual coupling ring gap structure is 1.31 mm, and the outer circle radius is 1.12 mm.

[0061] As an embodiment provided by the present invention, preferably, the two slits etched in the rings are:

[0062] The outer ring is etched with a slit at the bottom end thereof which is parallel to and perpendicular to the microstrip line layer 1, and the width of the slit is 0.3 mm;

[0063] The inner ring is etched with a slit at the bottom end thereof which is parallel to and perpendicular to the microstrip line layer 1 , and the width of the slit is 0.15 mm.

[0064] As an embodiment provided by the present invention, preferably, the thickness of the ground wire GND layer 3 and the microstrip line layer 1 is 0-0.02 mm, and the material of the ground wire GND layer (3) and the microstrip line layer 1 is any one of gold, silver and copper, or a conductive material with the same conductivity as any one of gold, silver and copper.

[0065] As an embodiment provided by the present invention, preferably, as shown in Figure 2, in the complex magnetic permeability measurement area: a circle of substrate integrated waveguides is arranged around the magnetic guide area, and the diameter of each substrate integrated waveguide is 0.4 mm; the arrangement interval parallel to the complex magnetic permeability measurement area is 0.8 mm, and the arrangement interval perpendicular to the complex magnetic permeability measurement area is 0.5 mm.

[0066] As an embodiment provided by the present invention, preferably, the microstrip line layer 1 is a microstrip line that passes longitudinally through the middle of the dielectric layer 2, and the size of the microstrip line layer 1 is 20.6 mm×0.4 mm;

[0067] Two 50-ohm chip resistors are added to the microstrip line layer 1 or metal patches are integrated on the microstrip line layer;

[0068] The metal patch corresponds to the complex magnetic permeability measurement area of ​​the ground line GND layer (3), and the size of the metal patch is 2.6mm×0.9mm.

[0069] As an embodiment provided by the present invention, preferably, the size of the dielectric layer 2 is 35mm×26mm×0.813mm, and is allowed to fluctuate up and down by 0.0015mm based on the size. The material of the dielectric layer 2 is RO4350 material with a dielectric constant of 3.66 and a loss tangent value of 0.004.

[0070] As an embodiment provided by the present invention, preferably, when used as a complex dielectric constant measurement sensor, the measurement frequency band is 2.99 GHz-4.17 GHz, and the effective measurement range is: sample objects with a dielectric constant of 1-10 and a loss tangent value of 0-0.1;

[0071] When used as a complex magnetic permeability measurement sensor, the measurement frequency band is 3.76GHz-4.17GHz, and the effective measurement range is: sample objects with a magnetic permeability of 1-2 and a magnetic loss tangent value of 0-0.5;

[0072] The operating frequency bands of the 5G planar electromagnetic sensor include the 5G n77, n78 and n79 frequency bands;

[0073] The complex permittivity includes the dielectric constant and the electric loss tangent, and the complex permeability includes the magnetic permeability and the magnetic loss tangent.

[0074] Example 2:

[0075] As shown in FIG4 , as a second embodiment provided by the present invention, the present invention provides a method for measuring the complex dielectric constant and complex magnetic permeability of a 5G planar electromagnetic sensor based on a mutually coupled ring gap. The method is implemented based on the 5G planar electromagnetic sensor described in the first aspect, and the method includes the following steps:

[0076] Step S1: Measure the complex magnetic permeability of the sample under test:

[0077] Step S01: placing the sample of the object to be measured on the complex magnetic permeability measurement area;

[0078] Step S02: Under the resonance of the 3.5GHz-4.2GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling ring gap to obtain the transmission coefficient center frequency S 21 parametric curves;

[0079] Step S03: Determine S 21 Resonant frequency and insertion loss of parameter curves;

[0080] Step S04: determining the magnetic permeability of the sample according to the resonant frequency, and determining the magnetic loss tangent value of the sample according to the insertion loss;

[0081] Step S2: Measure the sample

[0082] Step S021: placing the sample to be measured on the complex dielectric constant measurement area;

[0083] Step S022: Under the resonance of the 2.8 GHz-4.2 GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling ring gap to obtain the transmission coefficient center frequency S 21 parametric curves;

[0084] Step S023: Determine the S 21 Resonant frequency and insertion loss of parameter curves;

[0085] Step S024: determining the dielectric constant of the sample under test according to the resonant frequency, and determining the electric loss tangent value of the sample under test according to the insertion loss.

[0086] The test results are shown in Figures 6-7. In the present invention, the ground wire GND layer is etched to form an equivalent circuit, and is in contact with the sample under test to measure the complex dielectric constant and complex magnetic permeability of the sample; the dielectric layer is used to form an LC-like resonant cavity; the microstrip line layer is used to transmit signals and match the signal output end with the load to achieve simultaneous measurement of the complex dielectric constant or complex magnetic permeability of the sample, thereby improving the measurement accuracy of the complex dielectric constant and complex magnetic permeability.

[0087] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0088] The preferred embodiments of the present invention disclosed above are intended only to help illustrate the present invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the present invention to the specific embodiments described. Obviously, many modifications and variations are possible based on the content of this specification. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A 5G planar electromagnetic sensor based on a mutually coupled loop slot, characterized in that, it includes: A ground GND layer (3), which is used to form an equivalent circuit and measures the complex permittivity and complex permeability of a sample by contacting the sample to be measured; A dielectric layer (2), which is used to form a quasi-LC resonant cavity; A microstrip line layer (1), which is used to transmit signals and match the signal output end with a load; The ground GND layer (3) includes a mutually coupled loop slot resonant structure and a substrate integrated waveguide structure composed of two circular ring etchings; Among them, the opening directions of the two circular ring etchings are the same, and the area surrounded by the two circular rings serves as the complex permittivity measurement area and the complex permeability measurement area.

2. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 1, characterized in that, One of the two circular rings is an outer ring and the other is an inner ring; The electric field strength in the area outside the complex permeability measurement area is large and the magnetic field strength is small, serving as the complex permittivity measurement area; The opening of the outer ring extends outward, and the area where it extends outward has a small electric field strength and a large magnetic field strength, serving as the complex permeability measurement area.

3. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 2, characterized in that, The ground GND layer (3) is a rectangular metal etched with a double-ring mutually coupled loop slot structure; Among them, the inner circle radius of the outer ring of the double-ring mutually coupled loop slot structure is 2.17 mm, and the outer circle radius is 2.38 mm; The inner circle radius of the inner ring of the double-ring mutually coupled loop slot structure is 1.31 mm, and the outer circle radius is 1.12 mm.

4. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 3, characterized in that, The openings of the 2 circular ring etchings are respectively: The outer ring is etched with a slit at the bottom parallel and perpendicular to the microstrip line layer (1), and the slit width is 0.3 mm; referring to the inner and outer ring slits The inner ring is etched with a slit at the bottom parallel and perpendicular to the microstrip line layer (1), and the slit width is 0.15 mm.

5. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 4, characterized in that, The thickness of the ground GND layer (3) and the microstrip line layer (1) is 0 - 0.02 mm, and the materials of the ground GND layer (3) and the microstrip line layer (1) are any one of gold, silver, and copper, or a conductive material with the same conductivity as any one of gold, silver, and copper.

6. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 5, characterized in that, A circle of substrate integrated waveguides is arranged around the complex permeability measurement area. The substrate integrated waveguides are copper columns, and the diameter of each substrate integrated waveguide is 0.4 mm; the arrangement interval parallel to the complex permeability measurement area is 0.8 mm, and the arrangement interval perpendicular to the complex permeability measurement area is 0.5 mm.

7. A 5G planar electromagnetic sensor based on a mutually coupled loop slot according to claim 1, characterized in that: The microstrip line layer (1) is a microstrip line longitudinally passing through the middle position of the dielectric layer (2), and the size of the microstrip line layer (1) is 20.6 mm × 0.4 mm; Two 50-ohm patch resistors are added to the microstrip line layer (1) or metal patches are integrated on the microstrip line layer; The metal patches correspond to the complex permeability measurement region of the ground wire GND layer (3), and the size of the metal patches is 2.6 mm × 0.9 mm.

8. A 5G planar electromagnetic sensor based on mutual-coupled loop slots according to claim 1, characterized in that the size of the dielectric layer (2) is 35 mm × 26 mm × 0.813 mm, and the material of the dielectric layer (2) is RO4350 material with a dielectric constant of 3.66 and a loss tangent value of 0.

004.

9. A 5G planar electromagnetic sensor based on mutual-coupled loop slots according to claim 1, characterized in that: When used as a complex permittivity measurement sensor, the measurement frequency band is 2.99 GHz - 4.17 GHz, and the effective measurement range is: sample objects to be measured with a permittivity of 1 - 10 and an electrical loss tangent value of 0 - 0.1; When used as a complex permeability measurement sensor, the measurement frequency band is 3.76 GHz - 4.17 GHz, and the effective measurement range is: sample objects to be measured with a permeability of 1 - 2 and a magnetic loss tangent value of 0 - 0.5; The operating frequency band of the 5G planar electromagnetic sensor includes three frequency bands of n77, n78, and n79 of 5G; The complex permittivity includes the permittivity and the electrical loss tangent value, and the complex permeability includes the permeability and the magnetic loss tangent value.

10. A method for measuring the complex permittivity and complex permeability of a 5G planar electromagnetic sensor based on mutual-coupled loop slots, characterized in that the method is implemented based on the 5G planar electromagnetic sensor according to any one of claims 1 - 9, and the method includes the following steps: Step S1: Measuring the complex permeability of the sample object to be measured: Step S01: Placing the sample object to be measured on the complex permeability measurement region; Step S02: Under the resonance of the 3.5 GHz - 4.2 GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling loop slot to obtain the center frequency S of the transmission coefficient 21 parameter curve; Step S03: Determine S 21 The resonant frequency and insertion loss of the parametric curve; Step S04: Determining the permeability of the sample according to the resonance frequency, and determining the magnetic loss tangent value of the sample according to the insertion loss; Step S2: Measuring the Step S021: Placing the sample object to be measured on the complex permittivity measurement region; Step S022: Under the resonance in the 2.8 GHz - 4.2 GHz frequency band, use a vector network analyzer to measure the 5G planar electromagnetic sensor of the mutual coupling loop slot, and obtain the transmission coefficient center frequency S 21 parameter curve; Step S023: Determine the 21 resonant frequency and insertion loss of the parametric curve; Step S024: Determining the permittivity of the sample object to be measured according to the resonance frequency, and determining the electrical loss tangent value of the sample object to be measured according to the insertion loss.

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