Device and method for treating surfaces

Abstract

The invention relates to a device for treating a surface of a substrate configured as a plate, with a plurality of energy sources which are arranged in rows offset from one another, and the active surfaces of which overlap, and with a heating means which is oriented parallel to the surface of the substrate, wherein the heating means is arranged in one or more planes between the substrate and the energy sources, wherein the substrate is positioned with regard to a horizontal at an angle between 45 and 90 degrees, preferably between 75 and 95 degrees. The invention also relates to a method for treating a surface of a substrate configured as a plate.

Description

[0001] Device and method for treating surfaces

[0002] The invention relates to a device and a method for treating a surface of a substrate in the form of a plate. Treatment can be understood as one or a combination of cleaning, conversion, layer removal, layer deposition, activation, passivation, and termination.

[0003] A generic method is known from the applicant's document DE 102013 112 785 B3. In this known method, a substrate is first heated and a gas located in direct proximity to the substrate is energetically excited to effect the treatment.

[0004] A disadvantage of the known method is that, according to the prior art, the energy sources for exciting the gas can only reach a relatively small part of the substrate due to the heating device and the arrangement of the energy sources, so that the substrate or the energy sources must be moved in such a way that the entire substrate can be reached by the energy sources.

[0005] The object of the present invention is to overcome the disadvantages of the prior art and to provide a device and a method by means of which an effective treatment of the substrate surface is possible.

[0006] This object is achieved by a device and a method according to the claims.

[0007] The device according to the invention for treating the surface of a substrate in the form of a plate comprises a plurality of energy sources arranged in offset rows, the effective areas of which overlap. The device further comprises a heating device aligned parallel to the surface of the substrate, wherein the heating device is arranged in one or more planes between the substrate and the energy sources. The substrate is positioned at an angle of between 45 and 90 degrees, preferably between 75 and 95 degrees, relative to a horizontal plane.

[0008] According to an advantageous development, the heating device is designed such that areas are cut out such that the energy sources can act on the substrate through the cut-out areas. According to a further advantageous development, the device further comprises a transport device which is designed to transport the substrate into the device, through the device and out of the device. The transport device is designed to stop the substrate in the device for treatment. Alternatively or additionally, the transport device can be designed to transport the substrate through the device for treatment at a predetermined speed. Further alternatively or additionally, the transport device can be designed to transport the substrate back and forth in an oscillating manner in the device for treatment.

[0009] According to a further advantageous development, the device is designed to be vacuum-capable and comprises a vacuum pump which is designed to generate a vacuum in the interior of the device.

[0010] A lock can be arranged at at least one end of the device.

[0011] Each of the locks can be configured so that it can only be opened when the energy sources are deactivated and the device is at least predominantly filled with neutral gas. Alternatively, each of the locks can be configured so that it can only be opened when the conditions in the device are matched to those of a neighboring device.

[0012] According to a further advantageous development, the energy sources can be beam sources, ion sources, ion beam sources, or plasma sources. In the case of plasma sources, these can be microwave plasma sources or inductively or capacitively coupled plasma sources. Each of the energy sources can be point-shaped. Each of the point-shaped energy sources generates an approximately hemispherical plasma, with the plasma density decreasing with increasing distance, so that a Gaussian-like distribution of plasma particles impinges on the substrate, and the effective area, i.e., the impact area, can be approximated by a circular area. The effective area increases as the distance of the energy sources from the substrate increases. It is also conceivable to use a combination of the various energy sources listed above.

[0013] According to a further advantageous development, the device further comprises a gas introduction device configured to introduce gas into the device. Depending on the treatment to be performed, the gas is then a gas suitable for effecting the corresponding treatment. As already mentioned, a treatment can comprise one or a combination of several steps, including cleaning, conversion, layer removal, layer deposition, activation, passivation, and termination.

[0014] It is also possible to introduce a protective gas or purge gas into the interior of the device via the gas introduction device. It is also possible to introduce an inert gas into the device to fill the device. This allows an atmosphere to be created in the device that is suitable for the respective treatment of the substrate surface to be carried out or for preparing the discharge of the substrate. A gas carrying a source material can also be introduced into the device via the gas introduction device, wherein the source material is suitable for being deposited on the substrate. Preferred source materials can be metals or semiconductor materials. Finally, a gaseous etchant can also be introduced into the device via the gas introduction device. The combination - simultaneously or sequentially - of different gases is also possible. Further design variants can be found below.

[0015] The invention further relates to a method for treating a surface of a substrate formed as a plate, the method comprising:

[0016] - positioning the substrate at an angle between 45 and 90 degrees, preferably between 75 and 95 degrees, with respect to a horizontal in a device having a plurality of energy sources arranged with overlapping active surfaces in mutually offset rows and a heating device arranged in one or more planes between the substrate and the energy sources aligned parallel to the surface of the substrate;

[0017] - heating the substrate by the heating device; and

[0018] - Exposing the substrate to a plasma generated by the energy sources.

[0019] According to a further advantageous development, the substrate is not moved during treatment. Alternatively or additionally, the substrate can be moved at a predetermined speed during treatment. Furthermore, alternatively or additionally, the substrate can be moved back and forth in an oscillating manner during treatment. The need to move the substrate depends on the quantity of energy sources used, their arrangement, and also on the treatment to be performed.

[0020] According to a further advantageous development, the method further comprises a

[0021] - Introduction of gas. The gas can be suitable for effecting the treatment, wherein the treatment of the substrate surface comprises one or more of: cleaning, converting, layer removal, layer deposition, activation, passivation, and termination. It is also possible to introduce a protective gas or purge gas into the interior of the device. It is also possible to introduce an inert gas into the device to fill the interior of the device. This allows an atmosphere to be created in the device. A gas carrying source material can also be introduced into the device, wherein the source material is suitable for being deposited on the substrate. Preferred source materials can be metals or semiconductor materials. Finally, a gaseous etchant can also be introduced into the device. The combination—simultaneous or sequential—of different gases is also possible.Further design variants can also be found below.

[0022] According to a further advantageous development, the energy sources can be beam sources, ion sources, ion beam sources, or plasma sources. In the case of plasma sources, these can be microwave plasma sources or inductively or capacitively coupled plasma sources. Each of the energy sources can be point-shaped. Each of the point-shaped energy sources generates an approximately hemispherical plasma, with the plasma density decreasing with increasing distance, so that a Gaussian-like distribution of plasma particles impinges on the substrate, and the effective area, i.e., the impact area, can be approximated by a circular area. The effective area increases as the distance of the energy sources from the substrate increases. It is also conceivable to use a combination of the various energy sources listed above.

[0023] For a better understanding of the invention, it is explained in more detail with reference to the following figures. They show, in highly simplified, schematic representations:

[0024] Fig. 1 is a schematic representation of the interior of the device;

[0025] Fig. 2 shows a cross-section of the interior of the device;

[0026] Fig. 3 different designs of the energy sources and the heating device;

[0027] Fig. 4 shows a cross-section through the interior of a combined heating element; and Fig. 5 shows an exemplary plate of a substrate.

[0028] By way of introduction, it should be noted that in the variously described embodiments, identical parts are provided with identical reference symbols or component designations. The disclosures contained throughout the description can be applied analogously to identical parts with identical reference symbols or component designations. Furthermore, the positional information chosen in the description, such as top, bottom, side, etc., refers to the directly described and illustrated figure, and these positional information must be applied analogously to the new position in the event of a change in position.

[0029] Fig. 1 shows a schematic representation of the interior of the device 1. The device 1 serves to treat the surface of a substrate 2 in the form of a plate. Treatment can be understood, for example, as one or a combination of cleaning, conversion, layer removal, layer deposition, activation, passivation, and termination. Other known deposition or plasma treatment processes for plate-shaped substrate surfaces can also be carried out using such a device.

[0030] Cleaning is a process of plasma surface technology in which impurities, foreign particles, grease, chemical residues or (oxide) layers on the substrate surface are removed by chemical reactions of ionized gases or particles.

[0031] A fundamentally chemical cleaning process can always include a physical component. This is called atomization or sputtering and cleans a surface, for example, by particle bombardment. Since the chemical process is more energy-efficient, the physical component should be kept as low as possible. Furthermore, the chemical process is gentler on the surface, i.e., the interface.

[0032] The transformation of a surface involves the formation of several monolayers of a new compound containing the substrate material. In a first variant of the transformation, substitution, atoms of the base layer are dissolved and replaced by others at a depth of several monolayers. For example, a silicon (Si) surface is converted into a silicon carbide (SiC) surface by treatment with a carbon (C) atmosphere under suitable conditions. Carbon atoms replace silicon atoms at a depth of several monolayers.

[0033] In a second variant of the transformation, enrichment, the surface is enriched or saturated with carbon and new bonds are formed as one or more monolayers by diffusion and, if necessary, subplantation.

[0034] A monolayer refers to a layer of atoms or molecules on a surface or within a layer within a single layer, with a layer height of only one atom, i.e., one atomic layer or one molecule. Accordingly, no identical atoms, molecules, or cells lie on top of one another within the monolayer. Of course, the arrangement of two identical monolayers on top of one another is conceivable, which would naturally result in identical atoms, molecules, or cells lying on top of one another.

[0035] Layer ablation refers to the removal of one or more layers (e.g., monolayers). This can occur through chemical reactions, i.e., the layers to be ablated react with atoms or molecules in the surrounding area, thereby detaching from the surface. Ablation can also be achieved through laser radiation or etching, such as ion beam etching. Etching by introducing an etching gas into the device is also conceivable. Gas groups that can be used for etching include fluorine compounds, such as sulfur hexafluoride, nitrogen trifluoride, and tetrafluoromethane, or chlorine compounds, such as hydrogen chloride.

[0036] It should be noted that layer removal can also generally be referred to as etching. A distinction is made between physical etching and chemical etching. Physical etching is performed by particle bombardment (so-called sputtering), for example, from one or more plasma or ion beam sources, heating, or laser radiation (in such a way that a laser utilizes the ablation process rather than simply heating). Chemical etching, on the other hand, uses chemical reactions to release the particles.

[0037] Furthermore, a combination of both etching techniques can also be used.

[0038] Layer deposition means that one or more layers are deposited on the surface, i.e. they accumulate there. A solid component is deposited on a heated surface of a substrate as a result of a chemical reaction from the gas phase of a gas around the substrate. The material in the gas that is to be deposited is also called the source material. Examples of gas compounds that can be used as source material are carbon compounds such as methane, ethane and ethyne or silicon compounds such as monosilane. As a result, volatile compounds of the layer components are deposited as a solid layer at a specific reaction temperature. The process of chemical layer deposition comprises at least one reaction on the surface of the substrate to be coated. This reaction involves at least one gaseous starting compound, i.e. reactant, and at least two reaction products.

[0039] Activation is the conversion of a reactant into a state or a chemical compound that allows a certain reaction or reaction type to proceed at a higher rate or yield due to increased reactivity. Some doped semiconductor layers are initially electrically neutral after growth and only become n- or p-type conductive upon activation. For example, p-type gallium nitride (GaN), i.e. gallium nitride doped with magnesium (Mg), is not yet p-type after growth. p-type refers to so-called p-doped semiconductors, or p-semiconductors for short. These create freely movable gaps on a background of negative, stationary atomic cores. In contrast, n-type semiconductors (n-doped, n-type) create freely movable electrons on a background of positive, stationary atomic cores. During growth in a metal-organic chemical vapor deposition (MVD) process, the electrons are freely movable.In Metal-Organic Chemical Vapor Deposition (MOCVD) the magnesium atom binds hydrogen and only through thermal or energy beam treatment can it become p-type conductive after outgassing of molecular hydrogen (H2).

[0040] In surface technology, passivation refers to the spontaneous formation or deliberate creation of a non-metallic protective layer on a semiconductor layer, on the base material of the substrate, or on a metallic material to prevent or significantly slow oxygen corrosion of the base material. If the protective layer contains chromium, it is called chromating. The passivation of a surface therefore refers to the creation of an insulating protective layer. Common passivation layers are silicon nitride (SiN) and silicon oxides (SiO and SiO2) because they are easy to produce. Aluminum nitride (AlN) and diamond can also be used as passivation layers.

[0041] Termination is the closing off of a surface. This can be achieved, for example, by the attachment of an additional atomic layer, whereby the surface of silicon (Si) is terminated with oxygen (O) to form silicon oxide (SiO or SiO2), which is then no longer reactive.

[0042] For these and other treatment types, a suitable gas is usually introduced into the device 1 or is already present. If the gas is to be introduced, the gas introduction device 9 can be used. Possible source materials for the various treatment types are explained below.

[0043] If an atmosphere is to be created in the device 1, the following common gases can be used, among others: argon, helium, hydrogen, oxygen and nitrogen.

[0044] For surface treatment, the substrate 2 is positioned in the device 1 at an angle between 45 and 90 degrees relative to the horizontal. In addition to the improved handling of a substrate 2 that is not completely flat and the reduced space requirement, the greatest advantage is that the more upright position of the substrate prevents particles from settling on the substrate 2 due to gravity, and the residues generated by the treatment do not remain on the substrate 2.

[0045] An angle between 75 and 95 degrees is particularly preferred for the inclination. The substrate 2 is indicated by the dashed line in Fig. 1 to show the elements of the device 1 located behind it.

[0046] The device comprises several energy sources 3 arranged in offset rows, with overlapping active surfaces. The gas surrounding the substrate 2 is excited by the energy sources 3. Fig. 3 shows examples of planar energy elements 3a and point-shaped energy elements 3b. Energy sources 3 of other shapes can also be used. Here, too, a combination of different energy elements can be used to form the energy sources 3.

[0047] The staggered arrangement ensures better space utilization, especially for point-shaped energy sources 3, whose effective area on the flat substrate 2 is approximated by a circular area. It is important that the effective areas on the substrate 2 overlap in order to treat the entire surface of the substrate 2. The overlap can be kept as minimal as possible for optimization.

[0048] Possible energy sources 3 are described below:

[0049] Beam sources are available in various forms. Some variants include laser beam sources, electron beam sources, X-ray sources, and UV sources (UV stands for ultraviolet radiation). Hybrid forms of these beam sources are also known, such as laser- and plasma-based X-ray and UV sources.

[0050] Ion sources can also be used; they generate atomic and molecular ions. Other applications for ion sources include mass spectrometers, optical emission spectrometers, particle accelerators, ion implanters, and ion thrusters. In an ion source, ions are generated through ionization. Various methods are known for ionization, such as electron ionization, field ionization, particle bombardment, photoionization, and others.

[0051] Ion beam sources can also be used; they are usually designed as low-pressure plasmas in a separate, galvanically decoupled discharge vessel, which is sealed on one side with a semi-transparent ion optic. By applying additional electrical potentials, the ions are extracted from the plasma of the discharge vessel and accelerated in a targeted manner.

[0052] Plasma sources can also be used as energy sources. 3 These can be configured as microwave plasma sources, inductively coupled plasma sources, or capacitively coupled plasma sources. Microwave plasma sources are particularly suitable because the plasma density and the proportion of radicals in the generated microwave plasma are very high.

[0053] The energy sources 3 can be designed in various variants, ie, point-shaped, planar, or other forms can be used. The various energy sources 3 can also be designed differently, ie, different types and / or forms can be combined.

[0054] In addition, one or more of the energy sources 3 can also be assigned material sources, so that the material released by the material source is delivered to the surface of the substrate 2, for example by a plasma-vacuum process.

[0055] Material sources can, for example, use metal compounds (or semi-metal compounds such as semiconductor materials) in liquid form, which can be introduced into the device via a carrier gas. Examples of materials used here include trimethylgallium or gallium(III) chloride (GaCh). Gaseous compounds such as monosilane or methane can also be used as material sources, which, when decomposed by the plasma sources, then provide the respective layer material for silicon carbide (SiC), diamond, or graphene.

[0056] The device 1 further comprises a heating device 4, which is aligned parallel to the surface of the substrate 2. Ideally, the heating device 4 is located very close to the substrate 2 to minimize energy loss to the environment due to waste heat. The heating device 4 is arranged in one or more planes between the substrate 2 and the energy sources 3.

[0057] The heating device heats the substrate 2 to enable the treatment. This heating generates (reaction) temperatures in the device that range from room temperature (20°C) to approximately 900°C, depending on the treatment. A range between room temperature and approximately 600°C is preferred. A range between 150°C and 350°C is particularly preferred.

[0058] The heating device 4 is shown in Fig. 1 as a plurality of heating coils. However, as can be seen in Fig. 3, the heating device 4 can also be configured differently. Fig. 3 shows exemplary surface heating elements 4a and heating coils 4b. Inductive or other heating elements are also conceivable. In general, any heat source that achieves the desired temperatures can be used. A combination of different heating elements can also be used to form the heating device 4.

[0059] Fig. 2 shows a cross-section of the interior of the device 1, specifically along the section line marked n in Fig. 1. The heating device 4 is arranged, on the one hand, between the energy sources 3 and the substrate 2 and, on the other hand, at a distance of 10 mm to 100 mm, preferably less than 50 mm, from the surface of the substrate 2.

[0060] The energy sources 3 can be arranged in rows offset from one another both in the feed direction and orthogonally thereto in the height direction.

[0061] Advantageously, the heating device 4 can be designed such that areas are recessed such that the energy sources 3 can act on the substrate 2 through the recessed areas. This also avoids energy loss and makes the treatment energy-efficient. The device 1 can advantageously further comprise a transport device 5. The transport device 5 can transport the substrate 2. In Fig. 1, transport rollers are shown by way of example, which can be driven or non-driven and on which the substrate can be moved.

[0062] The transport device 5 can transport the substrate 2 into the device 1, move it back and forth in an oscillating manner along the feed directions, through the device 1, and out of the device 1. In the simplest case, the substrate 2 remains stationary in the device 1 during treatment and is not moved.

[0063] In particular, however, the transport device 5 can be configured to vary the speed. The substrate 2 can therefore be transported at a first speed towards the device 1 and then transported at a different speed into and through the device 1. This different speed can, for example, be lower in order to avoid collisions. Because the substrate

[0064] 2 is in motion during the treatment, the substrate 2 can be attached to the energy sources

[0065] 3, for example, to treat the entire surface or to avoid having to treat the entire surface of the substrate 2 at once. This requires fewer energy sources 3.

[0066] The transport device 5 can also move the substrate 2 back and forth in an oscillating motion within the device, thereby ensuring multiple treatment of all areas of the surface of the substrate 2. Preferably, the substrate or carrier plate is moved back and forth over a distance of between 150 mm and 1000 mm, particularly preferably between 200 mm and 500 mm.

[0067] The device 1 can have a vacuum pump 6, which is designed to create a vacuum in the interior of the device 1. This allows treatments to be carried out in a vacuum or under vacuum-like conditions, but also allows impurities, reaction products, residual gases and auxiliary materials from the treatment to be sucked off after the treatment. The gas introduction and the vacuum pump 6 can in particular create atmospheric conditions which, for example, correspond to the environment of the device 1, which makes it easier to open the device after the treatment. The device 1 can comprise a lock 7 at at least one end. A lock 7 is shown in Figs. 1 and 2. Such a lock can connect the device 1 to the environment, or can represent a connection to a subsequent device 8, in which a further treatment can then be carried out. Thus, an adjacent device 8 orAnother treatment room is indicated in Fig. 1.

[0068] To increase safety, each of the locks 7 can be configured such that a lock can only be opened if safe conditions for opening, determined by sensors, are met. For example, the energy sources 3 are deactivated and the device 1 is at least predominantly filled with neutral gas or ambient air. Opening is then possible, and the plate can be removed or transported out. Alternatively, each of the locks 7 can be configured such that a lock can only be opened if the conditions in the device 1 are matched to those of a neighboring device 8. This can ensure a particularly gentle transition from one device 1 to the next device 2.

[0069] According to a further advantageous development, the device 1 further comprises a gas introduction device 9, which is configured to introduce gas into the device 1. In addition, a further gas supply for, for example, nitrogen (N2), dry compressed air (CDA), or extra-dry compressed air (XCDA) can be provided.

[0070] Various gases can be introduced. On the one hand, as described above, gas that effects a treatment, wherein the treatment of the surface of the substrate 2 comprises one or more of: cleaning, conversion, layer removal, layer deposition, activation, passivation, and termination.

[0071] It is also possible to introduce a protective gas or purge gas into the device via the gas introduction device 9. It is also possible to introduce an inert gas into the device to fill the device. This allows an atmosphere to be created in the device 1. A gas carrying source material can also be introduced into the device 1 via the gas introduction device 9, wherein the source material, i.e., the precursor, is suitable for being deposited on the substrate 2.

[0072] Depending on the application, the source material is deposited directly or as a reaction product generated by the plasma process, for example, through a reaction with the carrier gas or another gas, or the substrate. Source materials include gases or gas mixtures with components that form solids through decomposition in the plasma itself or through reactive processes, forming a layer. The decomposition can be stimulated, for example, by energy sources.

[0073] Preferred source materials can be metals or semiconductor materials, gases for producing passivation layers, such as silicon nitride (SiN) or silicon oxides (SiO and SiO2), gases for producing ceramic layers, such as diamond or silicon carbide (SiC) or gases for producing 2D layers, such as graphene or molybdenum sulfide (MoS2).

[0074] Semiconductor materials in this context can be understood to include, among others, the following: silicon, germanium, gallium phosphide, gallium arsenide, indium arsenide, diamond, gallium antimonide, indium antimonide, indium phosphide, gallium arsenide antimonide, aluminum gallium arsenide, aluminum nitride, indium nitride, boron nitride, gallium nitride, gallium indium arsenide antimonide, gallium indium phosphide, gallium indium arsenide, gallium indium antimonide, indium arsenide antimonide, gallium indium arsenide phosphide, silicon germanium, silicon carbide, graphene, molybdenum sulfide, zinc oxide, gallium oxide and aluminum oxide.

[0075] Finally, a gaseous etchant, generally fluorine- or chlorine-based compounds such as sulfur hexafluoride or hydrogen chloride, can also be introduced into the device via the gas introduction device 9. The combination—simultaneously or sequentially—of different gases or source materials is also possible.

[0076] Fig. 4 shows an alternative arrangement in which the energy sources 3 are arranged in a plane of the heating device 4 or between the heating elements of the heating device 4.

[0077] Fig. 5 shows an exemplary substrate 2, for example with several wafers or other plate-shaped substrates, printed circuit boards or semiconductor components.

[0078] A further embodiment of the invention consists in a method 100 for treating a surface of a substrate 2 formed as a plate, comprising the following steps:

[0079] In a first step 110, the substrate 2 is positioned at an angle between 45 and 90 degrees, preferably between 75 and 95 degrees, with respect to a horizontal in a device 1 having a plurality of energy sources 3 arranged with overlapping active surfaces in mutually offset rows and a heating device 4 arranged in one or more planes between the substrate 2 and the energy sources 3 aligned parallel to the surface of the substrate 2.

[0080] Then, in a second step 120, the substrate 2 is heated by the heating device 4.

[0081] In a third step 130, the substrate 2 is exposed to a plasma generated by the energy sources 3.

[0082] In an advantageous further development, the substrate 2 is not moved during the treatment, is moved at a predetermined speed or is moved back and forth in an oscillating manner.

[0083] The method 100 may further comprise a step 140 in which gas is introduced. The gas may be suitable for effecting the treatment, wherein the treatment of the surface of the substrate 2 comprises one or more of: cleaning, converting, layer removal, layer deposition, activation, passivation, and termination. It is also possible to introduce a protective gas or purge gas in step 140. It is also possible to introduce an inert gas into the device 1 to fill the device. This allows an atmosphere to be created in the device 1. A gas carrying source material may also be introduced, wherein the source material is suitable for being deposited on the substrate 2. The source material is preferably a metal or semiconductor material. The above description also applies to the source materials.

[0084] Finally, a gaseous etchant can also be introduced into the device 1 via the gas introduction device 9. The combination—simultaneously or sequentially—of different gases is also possible.

[0085] Finally, the above-mentioned various energy sources 3 are also available within the scope of the method 100: beam sources, ion sources, ion beam sources or plasma sources, wherein the plasma sources can be microwave plasma sources or inductively or capacitively coupled plasma sources, and wherein the energy sources 3 can be point-shaped.

[0086] The above-mentioned details and further development options described with reference to device 1 also apply to method 100. The exemplary embodiments show possible embodiments; it should be noted at this point that the invention is not limited to the specifically illustrated embodiments thereof; rather, various combinations of the individual embodiments are also possible. This variation possibility, based on the teaching of technical action based on the present invention, lies within the skill of the person skilled in this technical field.

[0087] The scope of protection is determined by the claims. However, the description and drawings must be used to interpret the claims. Individual features or combinations of features from the various embodiments shown and described may represent independent inventive solutions. The problem underlying these independent inventive solutions can be derived from the description.

[0088] All information on value ranges in this description is to be understood as including any and all sub-ranges thereof, e.g. the information 1 to 10 is to be understood as including all sub-ranges, starting from the lower limit of 1 and the upper limit of 10, ie all sub-ranges begin with a lower limit of 1 or greater and end with an upper limit of 10 or less, e.g. 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.

[0089] For the sake of clarity, it should finally be pointed out that, in order to better understand the structure, some elements have been shown out of scale and / or enlarged and / or reduced in size.

[0090] Reference symbol list

[0091] Device for treating a surface

[0092] Substrate, formed as a plate

[0093] Energy sources a planar energy elements b point energy elements

[0094] Heating device a flat heating elements b heating coils

[0095] Transport facility

[0096] vacuum pump

[0097] Locks

[0098] Adjacent device

[0099] Gas introduction device 00 Method for treating a surface 10 Positioning 20 Heating 30 Exposing to plasma 40 Introducing gas

Claims

Patent claims 1. Device (1) for treating a surface of a substrate (2) in the form of a plate, comprising: a plurality of energy sources (3) arranged in mutually offset rows and whose active surfaces overlap; and a heating device (4) aligned parallel to the surface of the substrate (2), wherein the heating device (4) is arranged in one or more planes between the substrate (2) and the energy sources (3); wherein the substrate (2) is positioned at an angle of between 45 and 90 degrees, preferably between 75 and 95 degrees, with respect to a horizontal.

2. Device (1) according to claim 1, wherein the heating device (4) is designed such that regions are cut out such that the energy sources (3) can act on the substrate (2) through the regions.

3. Device (1) according to claim 1 or 2, further comprising a transport device (5) which is configured to transport the substrate (2) into the device (1), through the device (1) and out of the device (1), and wherein the transport device (5) is configured to stop the substrate (2) for treatment in the device (1); to transport the substrate (2) for treatment at a predetermined speed through the device (1); and / or to transport the substrate (2) for treatment in the device (1) back and forth in an oscillating manner.

4. Device (1) according to one of claims 1 to 3, wherein the device (1) is designed to be vacuum-capable and comprises a vacuum pump (6) which is designed to generate a vacuum in the device (1).

5. Device (1) according to claim 4, wherein a lock (7) is arranged at at least one end of the device (1).

6. Device (1) according to claim 5, wherein the at least one lock (7) can only be opened when the energy sources (3) are deactivated and the device (1) is at least predominantly filled with neutral gas, or when the conditions in the device (1) are adapted to those of a neighboring device (8).

7. Device (1) according to one of claims 1 to 6, wherein the energy sources (3) are beam sources, ion sources, ion beam sources or plasma sources, wherein the plasma sources can be microwave plasma sources or inductively or capacitively coupled plasma sources, and wherein the energy sources (3) can be point-shaped.

8. Device (1) according to one of claims 1 to 7, further comprising a gas introduction device (9) which is arranged to introducing gas into the device (1) which is suitable for effecting the treatment, wherein the treatment of the surface of the substrate (2) comprises one or more of: cleaning, conversion, layer removal, layer deposition, activation, passivation and termination; to introduce protective gas or purge gas into the device (1); Introducing inert gas into the device (1) to fill the device (1); introducing gas carrying source material, preferably a metal or semimetal or other semiconductor materials, into the device (1), wherein the source material is suitable for being deposited on the substrate (2); and / or introducing gaseous etchant into the device (1).

9. A method (100) for treating a surface of a substrate (2) formed as a plate, the method (100) comprising: Positioning (110) the substrate (2) at an angle between 45 and 90 degrees, preferably between 75 and 95 degrees, with respect to a horizontal in a device (1) with a plurality of energy sources (3) arranged with overlapping active surfaces in mutually offset rows and a heating device (4) arranged in one or more planes between the substrate (2) and the energy sources (3) aligned parallel to the surface of the substrate (2); Heating (120) the substrate (2) by the heating device (4); and Exposing (130) the substrate (2) to a plasma generated by the energy sources (3).

10. The method (100) according to claim 9, wherein the substrate (2) is not moved during the treatment, is moved at a predetermined speed, or is moved back and forth in an oscillating manner.

11. The method (100) according to any one of claims 9 to 10, further comprising introducing (140) Gas for effecting the treating, wherein treating the surface of the substrate (2) comprises one or more of: cleaning, converting, layer ablation, layer deposition, activating, passivating and terminating; protective gas or purge gas into the device (1); Inert gas for filling the device (1); Source material, preferably a metal or a semimetal or other semiconductor materials, carrying gas into the device (1), wherein the source material is suitable for being deposited on the substrate (2); and / or gaseous etchant into the device (1).

12. Method (100) according to one of claims 9 to 11, wherein the energy sources (3) are beam sources, ion sources, ion beam sources or plasma sources, wherein the plasma sources can be microwave plasma sources or inductively or capacitively coupled plasma sources, and wherein the energy sources (3) can be point-shaped.

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