Method for manufacturing transparent CIGS module, and transparent CIGS module manufactured using same

Abstract

A method for manufacturing a transparent CIGS module by using a multi-stage laser see-through method, according to one embodiment of the present invention, comprises the steps of: obtaining a first processed CIGS module by applying a first laser scribing process to at least one layer of non-transparent CIGS module, provided in advance, including the plurality of layers; and obtaining a transparent CIGS module by applying, to the first processed CIGS module, a second laser scribing process for generating at least one transparent region.

Description

Method for manufacturing a transparent CIGS module and a transparent CIGS module manufactured thereby

[0001] The present invention relates to a method for manufacturing a transparent copper, indium, gallium, selenium (CIGS) module and a transparent CIGS module manufactured thereby, and more particularly, to a method for manufacturing a transparent CIGS module using a two-step laser see-through method for applying an existing non-transparent CIGS module to a window-type building integrated photovoltaic (BIPV) system and a transparent CIGS module manufactured thereby.

[0002] The Ministry of Land, Infrastructure and Transport plans to mandate zero-energy building (ZEB) certification for apartment complexes with 30 or more households starting in 2025 to reduce carbon emissions and increase energy self-sufficiency through solar energy and other sources.

[0003] Accordingly, various methods of utilizing renewable energy such as solar and wind power are being reviewed to increase the energy self-sufficiency rate, which refers to the proportion of renewable energy among the energy used in buildings, to over 20%.

[0004] Refer to Korean Patent Publication No. 10-1890102 regarding a 'solar module with increased power generation by forming a pattern on the front surface' in the prior art.

[0005] The purpose of this specification is to provide a method for manufacturing a transparent CIGS module using a two-step laser see-through method in order to apply an existing non-transparent CIGS module to a window-type building-integrated photovoltaic (BIPV) system, and a transparent CIGS module manufactured thereby.

[0006] A method for manufacturing a transparent CIGS module using a multi-stage laser see-through method performed by a laser system including a multi-stage laser device and an air blow device according to one embodiment of the present disclosure comprises the steps of: obtaining a primarily processed CIGS module by applying a first laser scribing process to at least one layer of a non-transparent CIGS module including a plurality of layers prepared in advance; and obtaining a transparent CIGS module by applying a second laser scribing process to create at least one transparent region on the primarily processed CIGS module.

[0007] A transparent CIGS module comprising a plurality of CIGS solar cells according to one embodiment of the present disclosure is characterized in that a first laser scribing process is applied to at least one layer of a non-transparent CIGS module comprising a plurality of pre-fabricated layers to obtain a first processed CIGS module, and a second laser scribing process is applied to the first processed CIGS module to create at least one transparent region.

[0008] According to one embodiment of the present disclosure, a transparent CIGS module comprises first and second CIGS cells, each of the first and second CIGS cells comprising first to third layers implemented to have a first width predetermined by application of a first laser scribing process; and a fourth layer implemented to have a second width predetermined by application of a second laser scribing process, characterized in that a first difference (d1) associated with a difference area between a first width and a second width is defined based on one side of the first and second CIGS cells, and a second difference (d2) associated with a difference area between the first width and the second width is defined based on the other side of the first and second CIGS cells.

[0009] According to the present embodiment, not only can laser see-through be realized with a low-cost laser device, but the electrical characteristics of a transparent CIGS solar module can also be minimized.

[0010] In addition, according to the present embodiment, a method for manufacturing a transparent CIGS module that can suppress the occurrence of slag and blur in a cross-section as much as possible using an existing laser device without introducing an expensive femtosecond (fs) or picosecond (ps) laser device by implementing a laser scribing process optimized for multiple layers included in a CIGS solar module step by step, and a transparent CIGS module manufactured thereby can be provided.

[0011] Not only can a plurality of CIGS cells included in a CIGS module according to the present embodiment be stably separated, but at least one transmission region, i.e., a vision region, can be stably formed.

[0012] Figure 1 is a drawing showing the cross-sectional structure of a non-transparent CIGS module.

[0013] Figure 2 is a plan view of a transmission-type CIGS module using a multi-stage laser see-through method according to an embodiment of the present invention.

[0014] Figure 3 is a cross-sectional view illustrating a process for manufacturing a transparent CIGS module by applying a conventional single laser process to a non-transparent CIGS module.

[0015] FIG. 4 is a conceptual diagram showing a laser system used in a multi-stage laser see-through method according to an embodiment of the present invention.

[0016] FIG. 5 is a conceptual diagram for explaining the cross-sectional structure of a CIGS module to which the first laser scribing process among the multi-stage laser see-through methods according to the present embodiment is applied.

[0017] FIG. 6 and FIG. 7 are conceptual diagrams for explaining the cross-sectional structure of a CIGS module to which a second laser scribing process among the multi-stage laser see-through methods according to the present embodiment is applied.

[0018] FIG. 8 is a conceptual diagram for defining laser process conditions for laser light output by a multi-stage laser device according to an embodiment of the present invention.

[0019] FIG. 9 is a conceptual diagram for explaining the cross-sectional structure of a transmission-type CIGS module to which a multi-stage laser see-through method according to the present embodiment is applied.

[0020] FIG. 10 is a plan view for explaining the aperture ratio of a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0021] Figure 11 is a graph showing the solar power generation performance using a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0022] FIG. 12 is a drawing showing a cross-sectional structure along the second direction of a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0023] FIG. 13 is a flowchart showing a method for manufacturing a transparent CIGS module to which a multi-stage laser see-through method according to the present embodiment is applied.

[0024] Figure 14 shows simulation results according to repetition rate under duration conditions according to the present embodiment.

[0025] Figure 15 shows the simulation results according to the repetition rate under the condition of a duration of 350 ns according to the present embodiment.

[0026] Fig. 16 is an application example showing a construction member of a zero-energy apartment to which a transparent CIGS module manufactured through a multi-stage laser see-through method according to the present embodiment can be applied.

[0027] The aforementioned features and the detailed description below are all exemplary, intended to aid in the description and understanding of this specification. That is, this specification is not limited to these embodiments and may be embodied in other forms. The following embodiments are merely examples intended to fully disclose this specification and are intended to convey the disclosure of this specification to those skilled in the art.

[0028] Therefore, when there are multiple ways to implement the components of this specification, it is necessary to make it clear that the specification can be implemented using any one of these methods or any method that is identical thereto.

[0029] When it is stated in this specification that a composition includes certain elements, or that a process includes certain steps, it is intended that other elements or other steps may be included.

[0030] In other words, the terms used in this specification are intended only to describe specific embodiments and are not intended to limit the concepts of this specification. Furthermore, the examples described to aid understanding of the invention also include complementary embodiments.

[0031] The terms used in this specification have the meanings commonly understood by those skilled in the art to which this specification pertains. In general, terms used should be interpreted consistently within the context of this specification.

[0032] Furthermore, terms used in this specification should not be interpreted in an overly idealistic or formal sense unless their meanings are clearly defined. Embodiments of this specification are described below with reference to the accompanying drawings.

[0033] Figure 1 is a drawing showing the cross-sectional structure of a non-transparent CIGS module.

[0034] Referring to FIG. 1, a non-transparent CIGS module (10) may include a first layer (L1) corresponding to a transparent electrode, a second layer (L2) corresponding to a CIGS buffer layer disposed under the first layer (L1), a third layer (L3) corresponding to a CIGS absorption layer disposed under the second layer (L2), a fourth layer (L4) corresponding to a rear electrode disposed under the third layer (L3), and a fifth layer (L5) corresponding to a rear glass disposed under the fourth layer (L4).

[0035] For example, the first layer (L1) may be implemented as a transparent electrode made of aluminum-doped zinc oxide (ZnO:Al), and the second layer (L2) may be implemented as a CIGS buffer layer made of indium-sulfur / zinc oxide (In-S / ZnO).

[0036] Additionally, the third layer (L3) can be implemented based on a CIGS absorbing layer, and the fourth layer (L4) can be implemented with a rear electrode made of molybdenum (Mo).

[0037] In particular, the fourth layer (L4) implemented with a molybdenum (Mo) material is implemented to have a dense bonding structure compared to the second layer (L2) and / or the third layer (L3) associated with CIGS.

[0038] Accordingly, in order to remove the fourth layer (L4) using a laser, higher energy is required than the energy required to remove the second layer (L2) and / or the third layer (L3).

[0039] Figure 2 is a plan view of a transmission-type CIGS module using a multi-stage laser see-through method according to an embodiment of the present invention.

[0040] Referring to FIG. 2, a transparent CIGS module (100) according to the present specification may include a plurality of CIGS cells (S1, S2, …) formed in parallel in a first direction (X) by applying a multi-stage laser see-through method.

[0041] That is, it will be understood that the multi-stage laser see-through method mentioned in this specification can be performed along the first direction (X).

[0042] For example, each CIGS cell (S1, S2, …) may be spaced apart by a predetermined interval along the second direction (Y). Here, the predetermined interval may be understood as a portion removed by applying a laser see-through method to form a transparent region of a transparent CIGS module.

[0043] Figure 3 is a cross-sectional view illustrating a process for manufacturing a transparent CIGS module by applying a conventional single laser process to a non-transparent CIGS module.

[0044] Referring to FIGS. 1 and 3, it can be understood that the conventional transparent CIGS module (30) is obtained by applying a single laser see-through process to the non-transparent CIGS module (10) of FIG. 1 described above.

[0045] For example, the fourth layer (L4) associated with the rear electrode implemented with a conventional molybdenum (Mo) material has a denser bonding structure than the second layer (L2) and / or third layer (L3) associated with CIGS.

[0046] In this case, when a single laser see-through process is applied, slag and / or blur may be formed on the cross-section of a plurality of CIGS cells (S1, S2) formed on a non-transparent CIGS module (e.g., 10 in FIG. 1) as relatively high laser processing energy is applied to remove up to the fourth layer (L4) using a single laser.

[0047] For reference, slag and blurr formed on the cross-section of multiple CIGS cells (S1, S2) may cause leakage current and short circuit of the upper and lower electrodes.

[0048] That is, when a conventional single laser see-through process is applied to a non-transparent CIGS module (e.g., 10 in Fig. 1), not only will the electrical characteristics of the solar cell deteriorate, but electricity production may become impossible due to a short circuit between the upper and lower electrodes.

[0049] In order to apply the single laser see-through process described above, it is necessary to minimize the effect of heat generated by high laser processing energy on the cross-section of multiple CIGS cells (e.g., S1 and S2 in FIG. 3).

[0050] That is, the existing single laser see-through process has a disadvantage in that it requires an expensive femtosecond (fs) or picosecond (ps) laser device that can implement a pulse duration of less than picoseconds.

[0051] FIG. 4 is a conceptual diagram showing a laser system used in a multi-stage laser see-through method according to an embodiment of the present invention.

[0052] Referring to FIGS. 1 to 4, the laser system according to the present embodiment may include a multi-stage laser device (400) and an air-blow device (410).

[0053] The multi-stage laser device (400) of FIG. 4 can be implemented to generate laser light for the working area (R) in the non-transparent CIGS module (10) of FIG. 1 described above according to predetermined first or second laser process conditions.

[0054] For example, when the work area (R) generated by the multi-stage laser device (400) moves along the first direction (X) to complete work on one line, the work area (R) can be implemented to move along the second direction (Y) by a predetermined interval and then move along the first direction (X) until work on the subsequent line is completed.

[0055] In other words, it will be understood that when the working area (R) generated by the multi-stage laser device (400) moves along both the first direction (X) and the second direction (Y) with respect to the non-transparent CIGS module (10) of FIG. 1, the transmissive CIGS module (100) of FIG. 2 can be obtained.

[0056] The air blower device (410) of FIG. 4 can be implemented to perform a cleaning operation of blowing clean air into the work area (R) so that particles generated from the work area (R) do not affect the subsequent process during the etching process for manufacturing a non-transparent CIGS module (10) into a transparent CIGS module (100).

[0057] In this case, clean air can be understood as clean, dry air from which impure particles have been removed and which has a predetermined air pressure from a pre-equipped compressor.

[0058] By implementing the multi-stage laser see-through method by the multi-stage laser device (400) mentioned in this specification and the cleaning operation by the air blow device (410) to be performed simultaneously (or sequentially), the deterioration of the output characteristics of the transmissive CIGS module (100) due to particles generated from the working area (R) during the etching process for manufacturing the non-transmissive CIGS module (100) into the transmissive CIGS module (100) can be prevented.

[0059] FIG. 5 is a conceptual diagram for explaining the cross-sectional structure of a CIGS module to which the first laser scribing process among the multi-stage laser see-through methods according to the present embodiment is applied.

[0060] Referring to FIGS. 1 to 5, it will be understood that the cross-sectional structure of the CIGS module of FIG. 5 can be related to a portion of the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0061] Specifically, the plurality of CIGS cells (S1, S2) of the CIGS module of FIG. 5 may correspond to the plurality of CIGS cells (e.g., S1, S2 of FIG. 2) arranged in the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0062] Meanwhile, for a non-transparent CIGS module (e.g., 10 in FIG. 1), a first laser scribing process can be performed along a first direction (X).

[0063] For example, in order to form a plurality of CIGS cells (S1, S2) included in a transparent CIGS module (e.g., 100 of FIG. 2) according to the present embodiment, the first to third layers (e.g., L1 to L3 of FIG. 1) can be removed using the first laser light generated according to the first laser process conditions set in advance.

[0064] Meanwhile, it will be understood that the first processed CIGS module upon completion of the first laser scribing process of FIG. 5 still exhibits opacity due to the presence of the fourth layer (L4) associated with the rear electrode.

[0065] For example, the first laser process conditions for the first laser scribing process may be associated with an average power of 1 to 1.5 watts (W), a pulse duration of 350 nsec, and a repetition rate of 30 kHz.

[0066] For reference, the first laser process conditions of Fig. 5 are described in more detail in Fig. 13 described below.

[0067] FIG. 6 and FIG. 7 are conceptual diagrams for explaining the cross-sectional structure of a CIGS module to which a second laser scribing process among the multi-stage laser see-through methods according to the present embodiment is applied.

[0068] It will be understood that the cross-sectional structure of the CIGS module of FIGS. 6 and 7 can be related to a part of the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0069] Specifically, the CIGS cells (S1, S2) of FIGS. 6 and 7 may correspond to a plurality of CIGS cells (e.g., S1, S2 of FIG. 2) arranged in the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0070] Referring to FIG. 6, the second laser scribing process of FIG. 6 can be implemented to remove the fourth layer (L4) corresponding to the rear electrode using second laser light generated according to preset second laser process conditions to generate at least one transmission area (m1-m2) in the CIGS module that has been primarily processed according to the first laser scribing process of FIG. 5 described above.

[0071] For example, the second laser process conditions for the second laser scribing process may be associated with an average power of 10 watts (W), a pulse duration of 200 nsec, and a repetition rate of 30 kHz.

[0072] The beam generated by the laser device used in the second laser scribing process of FIG. 6 can be implemented to be incident in the vertical direction (i.e., the Z direction).

[0073] Meanwhile, as shown in FIG. 7, depending on the working environment or implementation method, the beam generated by the laser device used in the second laser scribing process may be implemented to pass through the fifth layer (L5) having transparency and be incident in the direction opposite to the vertical direction (i.e., the -Z direction).

[0074] For reference, the second laser process conditions of FIGS. 6 and 7 are described in more detail in FIG. 13 described below.

[0075] In summary, according to the present embodiment, by implementing a two-stage multi-stage laser process rather than a single laser process using a low-cost existing laser device, there is an advantage in that a transparent CIGS solar module with minimized degradation of electrical characteristics can be manufactured without introducing an expensive femtosecond (fs) or picosecond (ps) laser device.

[0076] Accordingly, it will be understood that the possibility of slag and blur occurring in the cross-sectional structure of the CIGS module, as shown in Fig. 4, according to the existing single laser process can be minimized.

[0077] In addition, since multiple CIGS cells can be stably separated within a CIGS solar module to which a multi-stage laser see-through method according to the present specification is applied, there is also an advantage in that at least one transmission area, i.e., a vision area, can be stably formed.

[0078] In other words, by applying the multi-stage laser see-through method according to the present embodiment, a laser scribing process optimized for the physical and / or chemical properties of multiple layers included in a CIGS solar module can be implemented step by step.

[0079] Meanwhile, at least one penetration region mentioned in the present specification may be associated with a region (m1-m2) spanning m1 and m2 of FIGS. 6 and 7.

[0080] FIG. 8 is a conceptual diagram for defining laser process conditions for laser light output by a multi-stage laser device according to an embodiment of the present invention.

[0081] Referring to FIG. 8, the laser light generated by a multi-stage laser device (e.g., 400 in FIG. 4) for a work area (R) can be implemented as a pulse in the shape of a square wave in a frequency domain (f) with a predetermined duration ('Dur') and repetition rate ('RR').

[0082] For example, the solid line (A) in FIG. 8 may be associated with an actual frequency spectrum in the frequency domain of laser light, and the dotted line (B) in FIG. 8 may be associated with an ideal frequency spectrum in the frequency domain of laser light.

[0083] For example, duration (Dur) can be defined as the time interval corresponding to the frequency interval during which a frequency domain (f) pulse has a high level.

[0084] For example, the repetition rate (RR) can be defined as the frequency interval at which a pulse is repeated in the frequency domain (f).

[0085] FIG. 9 is a conceptual diagram for explaining the cross-sectional structure of a transmission-type CIGS module to which a multi-stage laser see-through method according to the present embodiment is applied.

[0086] Referring to FIGS. 1 to 9, it will be understood that the cross-sectional structure of the CIGS module of FIG. 9 can be related to a portion of the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0087] Specifically, the CIGS cells (S1, S2) of FIG. 9 may correspond to a plurality of CIGS cells (e.g., S1, S2 of FIG. 2) arranged in the AA' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0088] Meanwhile, the transparent CIGS module (900) manufactured through a multi-stage laser see-through method according to the present embodiment can be associated with the first to third widths (W1, W2, W3).

[0089] For example, the first width (W1) may be defined as a width corresponding to the first to third layers (e.g., L1, L2, L3) that are primarily processed by performing the first laser scribing process.

[0090] For example, the second width (W2) may be defined as the width of the opaque region associated with the fourth layer (e.g., L4) that is secondarily processed by performing the second laser scribing process.

[0091] For example, the third width (W3) may be defined as the width of the area (i.e., the transmission area) between the plurality of CIGS cells (S1, S2). Here, the third width (W3) may correspond to the area (m1-m2) spanning m1 and m2 of FIGS. 6 and 7 described above.

[0092] Meanwhile, in the present specification, the first difference (d1) of FIG. 9 can be defined as a difference area between the first width (W1) and the second width (W2) based on one side of the CIGS cell (S1, S2).

[0093] In addition, in the present specification, the second difference (d2) of FIG. 9 can be defined as a difference area between the first width (W1) and the second width (W2) based on the other side of the CIGS cell (S1, S2).

[0094] FIG. 10 is a plan view for explaining the aperture ratio of a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0095] Referring to FIGS. 1 to 10, when the width of the fourth layer (e.g., L4 in FIG. 1) associated with the back electrode layer (Mo) is manufactured wide, the first difference (d1) corresponding to the difference area between the first width (W1) and the second width (W2) based on one side of each CIGS cell (S1, S2) and the second difference (d2) corresponding to the difference area between the first width (W1) and the second width (W2) based on the other side are widened, thereby preventing deterioration of the electrical characteristics of the CIGS module. However, since the area of ​​the CIGS absorption layer responsible for power generation is narrowed, the generated current (power generation) may be reduced compared to a transparent CIGS module (e.g., 600 in FIG. 6) having the same aperture ratio.

[0096] Meanwhile, when the width of the fourth layer (e.g., L4 in FIG. 1) associated with the back electrode layer (Mo) is manufactured narrowly, the first difference (d1) corresponding to the difference area between the first width (W1) and the second width (W2) based on one side of each CIGS cell (S1, S2) and the second difference (d2) corresponding to the difference area between the first width (W1) and the second width (W2) based on the other side are narrowed, so the area of ​​the CIGS absorption layer responsible for power generation increases, so that the output according to sunlight can be increased compared to a transparent CIGS module (e.g., 600 in FIG. 6) having the same aperture ratio, but the possibility of deterioration of the electrical characteristics of the CIGS module during the manufacturing process can be increased.

[0097] Accordingly, considering the trade-off characteristics between preventing degradation of electrical characteristics and increasing power generation of solar cells, it will be understood that each of the difference areas (d1, d2) corresponding to the difference between the width (W1) of the transparent area and the width (W2) of the non-transparent area of ​​each CIGS cell (e.g., S1, S2 in FIG. 9) in the present embodiment can be appropriately implemented in the range of 10 to 220 μm.

[0098] For reference, in this specification, the difference region (d1, d2) corresponding to the difference between the width of the transmissive region (W1) and the width of the non-transmissive region (W2) of each CIGS cell (e.g., S1, S2 in FIG. 9) may also be referred to as the 1st to 2nd-step gap region.

[0099] Figure 11 is a graph showing the solar power generation performance using a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0100] Referring to FIG. 11, the solar power generation performance using a transparent CIGS module (900) manufactured through a multi-stage laser see-through method according to the present embodiment is shown as a Fill Factor (hereinafter referred to as 'F.F') of 53.6% and a Pmax of 5.212 W, which is superior to the solar power generation performance using a transparent CIGS module manufactured through a conventional single laser method, which is FF of 26.0% and Pmax of 0.67 W.

[0101] In other words, a transparent CIGS module (e.g., 900 in FIG. 9) manufactured through a multi-stage laser see-through method according to the present embodiment can be implemented to minimize electrical loss.

[0102] FIG. 12 is a drawing showing a cross-sectional structure along the second direction of a transparent CIGS module manufactured through a multi-stage laser see-through method according to an embodiment of the present invention.

[0103] Referring to FIGS. 1 to 12, it will be understood that the cross-sectional structure of the CIGS module of FIG. 12 can be related to a portion of the BB' cross-section of the transparent CIGS module (100) of FIG. 2 described above.

[0104] Referring to FIG. 12, a first layer (L1) corresponding to a transparent conductive oxide ('TCO') of a transparent CIGS module manufactured through a multi-stage laser see-through method may be implemented with a thickness of 1 μm, a second layer (L2) corresponding to a CIGS buffer layer may be implemented with a thickness of 30 nm, a third layer (L3) corresponding to a CIGS absorption layer may be implemented with a predetermined thickness below the CIGS buffer layer, and a fourth layer (L4) corresponding to a back electrode layer (Mo) may be implemented with a thickness of 280 nm.

[0105] FIG. 13 is a flowchart showing a method for manufacturing a transparent CIGS module to which a multi-stage laser see-through method according to the present embodiment is applied.

[0106] Referring to FIGS. 1 to 13, in step S1310, a method for manufacturing a transparent CIGS module according to an embodiment of the present invention may include a step of obtaining a first processed CIGS module having a cross-sectional structure as in FIG. 5 by applying a first laser scribing process to at least one layer of a non-transparent CIGS module (e.g., 10 of FIG. 1) including a plurality of pre-prepared layers (e.g., L1 to L5 of FIG. 1).

[0107] For example, one or more setting factors associated with optimal first laser process conditions for a laser device used in a first laser scribing process may include duration (Dur) and repetition rate (RR).

[0108] It will be appreciated that the multi-stage laser see-through method referred to herein may be implemented by adjusting one or more setting elements associated with a single laser device step by step.

[0109] In this case, the output of the laser light for the working area (e.g., R in FIG. 4) generated by the multi-stage laser device (e.g., 400 in FIG. 4) in the first laser scribing process can be performed at a predetermined ratio (e.g., 3% to 5%) of the maximum output (e.g., 30 W) of the multi-stage laser device (e.g., 400 in FIG. 4), i.e., an output of 1 to 1.5 W.

[0110] According to the present embodiment, the results of adjusting the duration (Dur) and repetition rate (RR) corresponding to one or more setting factors associated with the optimal first laser process conditions can be set as shown in Table 1 below.

[0111] The specimens associated with Tables 1 and 2 of this specification correspond to a size corresponding to a certain ratio (e.g., 1 / 5) of the size of the final test piece of a transparent CIGS module (100) having a target aperture ratio of 30% (e.g., 662 mm x 1,224 mm), and the sample temperature is 25°C.

[0112] Duration (ns)Repetition rate (kHz)d1(mm)d2(mm)W1(mm)W3(mm)Experiment #112,000---1.221Experiment #22,500---1.148Experiment #33,000---1.305Experiment #43,500---1.227Experiment #54,0000.1550.2261.6791.298Experiment #6161900.1510.2351.6131.227Experiment #7893 0.1510.2201.6051.234 Experiment #81,5950.1500.2271.5901.213 Experiment #92,2980.1660.2031.5741.205 Experiment #103,0000.1710.2051.5811.205 Experiment #1150900.1410.2181.5481.189 Experiment #124430.1240.2191.5401.197 Experiment #13795-- -1.238Experiment#141,1480.1240.2271.5331.182Experiment#151,5000.1660.2311.6161.219Experiment#16120510.1690.2171.5681.182Experiment#171650.1640.2071.5911.220Experiment#182780.1570.2081.5741.209Experiment#193920.1910.2301.64 Experiment #205050.1840.2181.5381.136 Experiment #21350300.2200.2011.5421.121 Experiment #22730.2270.1931.6021.182 Experiment #231150.1820.2271.5451.136 Experiment #241580.1190.2011.4341.114 Experiment #252000.1800.2271.5431.136

[0113] In step S1320, the method for manufacturing a transparent CIGS module according to the present embodiment may include a step of obtaining a transparent CIGS module by applying a second laser scribing process to a first processed CIGS module to create at least one transparent region according to a preset second output condition.

[0114] Table 2 below shows the results of performing a second laser scribing process with a duration (Dur) of 200 ns and a repetition rate (RR) of 30 kHz, regardless of the success or failure of the first laser scribing process, for a CIGS module according to the duration (Dur) and repetition rate (RR) corresponding to one or more of the setting elements for the first to 25th experiments (Experiments #1 to #25) of Table 1 above.

[0115] In this case, the output of the laser light for the work area (e.g., R in FIG. 4) generated by the multi-stage laser device (e.g., 400 in FIG. 4) in the second laser scribing process can be performed at a predetermined ratio (e.g., 35%) of the maximum output (e.g., 30 W) of the multi-stage laser device (e.g., 400 in FIG. 4), i.e., an output of 10 W.

[0116] 1 st Processing and 2 ndProcessing Results Fill Factor (%) Voc (V) Isc (A) Remarks Experiment #12620.6770125-Experiment #224.817.8630.095-Experiment #324.812.2910.063-Experiment #424.19.9750.027-Experiment #524.19.9750.027-Experiment #626.627.3520.078 Partial dot-shaped processing in the 1st to 2nd-step gap area Observation Experiment #728.426.6750.124 Experiment #825.519.0280.118 Experiment #922.08.8220.019 Experiment #1022.89.8220.039 Experiment #1123.712.0610.043 Experiment #1225.619.6560.088 Experiment #1326.427.4430.104 Experiment #1 Experiment #1530.033.1370.104 Experiment #1633.051.3040.103 Experiment #1725.719.9320.094 Experiment #1824.410.4460.031 Experiment #1925.96.8030.014 Experiment #2050.373.0490.126 Low reproducibility Experiment #2153.673.0570.133 Experiment #2229.223.8820.116 Experiment #2328.416.8920.094 Experiment #2429.822.9910.117 Experiment #2528.619.8510.098

[0117] Referring to Table 1 and Table 2, in Experiments #1 to #4, the first laser scribing process was not performed properly due to a focus mismatch in the z-axis caused by a flatness issue between the substrate of the laser device and the surface of the CIGS cell.

[0118] Referring to Table 1 and Table 2, in the case of Experiment #5, the second difference (d2) exceeded 220 μm and the fill factor value (24.1%) did not meet the standard range (over 50%), so it was found to be unsuitable in terms of efficiency for application to solar modules.

[0119] Referring to Table 1 and Table 2, for Experiment #6 to Experiment #10, partial dot-shaped processing was observed in the 1st to 2nd-step gap area, and in particular, it was confirmed that the unprocessed area increased as the repetition rate decreased under the same duration condition.

[0120] Meanwhile, it is understandable that, under the same duration conditions, the higher the repetition rate, the lower the output from the laser device, but the processed interval may appear narrower because the interval between dots becomes narrower.

[0121] Referring to Table 1 and Table 2, for Experiment #11 and Experiment #12, partial dot-shaped processing was observed in the 1st to 2nd-step gap area, and in particular, it was confirmed that the unprocessed area increased as the repetition rate decreased under the same duration condition.

[0122] Referring to Table 1 and Table 2, it was found that in Experiment #13, the first laser scribing process was not performed properly because the 1st to 2nd-step gap region was not formed.

[0123] Referring to Table 1 and Table 2, in the case of Experiment #14, partial dot-shaped processing was observed in the 1st to 2nd-step gap region, and in particular, the second difference (d2) exceeded 220 μm and the fill factor value (25.5%) did not satisfy the standard range (over 50%), so it was found to be unsuitable in terms of efficiency for application to solar modules.

[0124] Referring to Table 1 and Table 2, in the case of Experiment #15, it was confirmed that the first laser scribing process was performed smoothly, but the second difference (d2) exceeded 220 μm and the fill factor value (30.0%) did not satisfy the standard range (over 50%), so it was found to be unsuitable in terms of efficiency for application to solar modules.

[0125] Referring to Table 1 and Table 2, it was confirmed that the processing rate of the first laser scribing process increased because the output intensity of the laser device increased in Experiment #16 to Experiment #20 because the duration condition was relatively large at 120 ns compared to the cases where the duration condition was 1 ns, 16 ns, and 50 ns.

[0126] However, since the fill factor values ​​corresponding to experiments #16 to #19 did not meet the standard range (over 50%), they were found to be unsuitable in terms of efficiency for application to solar modules.

[0127] Meanwhile, Experiment #20 in Tables 1 and 2 showed a sharp increase compared to other Repetition rate conditions of 120 ns, satisfying the standard range (over 50%) with a Fill factor value of 50.3%.

[0128] Accordingly, the researcher conducted additional experiments to confirm reliability, and the results of the additional experiments confirmed that the repeatability of Experiment #20 was poor.

[0129] Referring to Table 1 and Table 2, Experiments #21 to #25 are described with reference to Figure 15 described below.

[0130] Figure 14 shows simulation results according to repetition rate under duration conditions according to the present embodiment.

[0131] The results in Fig. 14 are a diagram of Tables 1 and 2 described above, and it can be understood that the Fill Factor value tends to increase as the duration increases, that is, as the output intensity of the laser device increases.

[0132] Figure 15 shows the simulation results according to the repetition rate under the condition of a duration of 350 ns according to the present embodiment.

[0133] Referring to Fig. 15, it can be understood that the Fill Factor tends to decrease as the repetition rate (RR) increases under the condition of a duration (Dur) of 350 ns associated with Experiments #21 to #25 of Tables 1 and 2 described above.

[0134] Accordingly, it will be understood that an optimized first laser scribing process for a transmission-type CIGS module (100) satisfying a target aperture ratio of 30% can be established when the first laser process conditions are preset to the upper limit of the duration condition of 350 ns and the lower limit of the repetition rate of 30 kHz in the output range of 1 W to 1.5 W of a multi-stage laser device (e.g., 400 in FIG. 4).

[0135] Meanwhile, the second laser process conditions may be preset to a duration of 200 ns and a repetition rate of 30 kHz under an output of 10 W of a multi-stage laser device (e.g., 400 in FIG. 4), but it will be understood that the second laser process conditions are not necessarily limited to a range in which removal of the rear electrode made of molybdenum (Mo) material is possible.

[0136] Fig. 16 is an application example showing a construction member of a zero-energy apartment to which a transparent CIGS module manufactured through a multi-stage laser see-through method according to the present embodiment can be applied.

[0137] Referring to FIGS. 1 to 16, it will be understood that the transparent CIGS module (e.g., 900 in FIG. 9) manufactured through a multi-stage laser see-through method according to the present embodiment can be used in various ways as a construction member to which transparent BIPV is applied, such as windows, veranda railings, and rooftop railings, except for places where non-transparent BIPV is applied, such as exterior wall finishing of an apartment to which existing non-transparent CIGS modules are applied.

[0138] While the embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical spirit or essential characteristics thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

[0139] While the detailed description of this specification has described specific embodiments, various modifications are possible without departing from the scope of this specification. Therefore, the scope of this specification should not be limited to the above-described embodiments, but should be determined not only by the claims set forth below but also by equivalents of the claims of this invention.

Claims

1. A method for manufacturing a transparent CIGS module using a multi-stage laser see-through method performed by a laser system including a multi-stage laser device and an air blow device, A step of obtaining a first processed CIGS module by applying a first laser scribing process to at least one layer of a non-transparent CIGS module including a plurality of pre-fabricated layers; and A method comprising the step of obtaining a transparent CIGS module by applying a second laser scribing process to the first processed CIGS module to create at least one transparent region.

2. In paragraph 1, The above non-transparent CIGS module, A first layer corresponding to the transparent electrode; A second layer corresponding to a CIGS buffer layer disposed below the first layer; A third layer corresponding to a CIGS absorbing layer disposed below the second layer; A fourth layer corresponding to the rear electrode disposed under the third layer; and A method comprising a fifth layer corresponding to a rear glass disposed below the fourth layer.

3. In paragraph 2, A method characterized in that the first laser scribing process is implemented to remove the first to third layers using first laser light generated according to preset first laser process conditions.

4. In paragraph 3, A method characterized in that the pulse duration associated with the first laser light is set to a maximum limit, and the repetition rate associated with the first laser light is set to a minimum limit.

5. In paragraph 4, The above upper limit corresponds to 350 nsec, and A method characterized in that the above minimum limit corresponds to 30 kHz.

6. In paragraph 2, A method characterized in that the second laser scribing process is implemented to remove the fourth layer using second laser light generated according to preset second laser process conditions.

7. In paragraph 6, A method, characterized in that the duration of the pulse associated with the second laser light is set to 200 nsec and the repetition rate is set to 30 kHz.

8. In paragraph 1, A method, characterized in that the output range of the multi-stage laser device for the first laser scribing process corresponds to 1 to 1.5 W.

9. In paragraph 1, A method, characterized in that the first laser scribing process and the cleaning operation by the air blow device are performed simultaneously.

10. In a transparent CIGS module comprising a plurality of CIGS solar cells, The above transparent CIGS module, A transparent CIGS module characterized in that a first laser scribing process is applied to at least one layer of a non-transparent CIGS module including a plurality of pre-fabricated layers to obtain a first processed CIGS module, and a second laser scribing process is applied to the first processed CIGS module to create at least one transparent region.

11. In clause 10, The above non-transparent CIGS module, A first layer corresponding to the transparent electrode; A second layer corresponding to a CIGS buffer layer disposed below the first layer; A third layer corresponding to a CIGS absorbing layer disposed below the second layer; A fourth layer corresponding to the rear electrode disposed under the third layer; and A transparent CIGS module comprising a fifth layer corresponding to a back glass disposed under the fourth layer.

12. In paragraph 11, The above first laser scribing process is implemented to remove the first to third layers using the first laser light generated according to the preset first laser process conditions, and A transparent CIGS module, characterized in that the pulse duration associated with the first laser light is set to a maximum limit, and the repetition rate associated with the first laser light is set to a minimum limit.

13. In paragraph 12, The above upper limit corresponds to 350 nsec, and A transparent CIGS module, characterized in that the above minimum limit corresponds to 30 kHz.

14. In paragraph 11, The second laser scribing process is implemented to remove the fourth layer using second laser light generated according to preset second laser process conditions, and A transparent CIGS module, characterized in that the duration of the pulse associated with the second laser light is set to 200 nsec and the repetition rate is set to 30 kHz.

15. Including the first and second CIGS cells, Each of the first and second CIGS cells, First to third layers implemented to have a predetermined first width by application of the first laser scribing process; and Including a fourth layer implemented to have a predetermined second width by application of a second laser scribing process, A first difference (d1) associated with a difference area between the first width and the second width is defined based on one side of the first and second CIGS cells, and A transparent CIGS module, wherein a second difference (d2) is defined associated with a difference area between the first width and the second width based on the other side of the first and second CIGS cells.

16. In paragraph 15, A transparent CIGS module, characterized in that the first difference and the second difference are set in the range of 10 to 220 μm.

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