Relaxor ferroelectric single-crystal electrode and preparation method therefor

Abstract

The present application provides a relaxor ferroelectric single-crystal electrode and a preparation method therefor. The preparation method therefor comprises: configuring an abrasive aqueous solution, and carrying out sandblasting treatment on a relaxor ferroelectric single-crystal wafer to obtain a sandblasted relaxor ferroelectric single-crystal wafer; using an ion sputtering method to sputter a transition metal on the sandblasted relaxor ferroelectric single-crystal wafer in a protective gas environment having a degree of vacuum of 1×10-1-1×10-2 Pa to prepare a transition metal layer; and using the ion sputtering method to sputter a noble metal on the transition metal layer in a protective gas environment having a degree of vacuum of 1×10-1-1×10-2 Pa to prepare a noble metal layer, thereby obtaining a relaxor ferroelectric single-crystal electrode. According to the relaxor ferroelectric single-crystal electrode provided by the present application, the problems of low interfacial bonding strength between the noble metal layer and the relaxor ferroelectric single-crystal wafer in the relaxor ferroelectric single-crystal electrode, as well as the noble metal layer being prone to peeling off are solved.

Description

Relaxor ferroelectric single crystal electrode and preparation method thereof

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 7, 2023, with application number 202311672342.3 and invention name “A Relaxor Ferroelectric Single Crystal Electrode and Its Preparation Method”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the technical field of piezoelectric materials, and in particular to a relaxor ferroelectric single crystal electrode and a preparation method thereof. Background Art

[0003] Relaxor ferroelectric single crystals are the most outstanding piezoelectric materials developed in the past two decades. Typical examples include lead magnesium niobate-lead titanate (PMN-PT) and lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT). Their piezoelectric constant d 33 It reaches 1200-2000pC / N, which is 4-5 times that of lead zirconate titanate (PZT) piezoelectric ceramics, and has an extremely large electromechanical coupling coefficient. Piezoelectric components made of relaxor ferroelectric single crystals have excellent piezoelectric properties in many fields such as medical ultrasound imaging, underwater acoustic systems, and high-strain actuators. Relaxor ferroelectric single crystal piezoelectric components are made by processing relaxor ferroelectric single crystal wafers into the required size and shape, and then plating a certain thickness of precious metal layer on the surface of the crystal, generally precious metals such as gold and silver. In addition to having a crystal material with uniform and good performance, the metal plating layer on the crystal surface also affects the performance of relaxor ferroelectric single crystal piezoelectric components.

[0004] When relaxor ferroelectric single crystals are used as piezoelectric components, a layer of precious metals such as gold and silver must be prepared on the surface as an electrode. The precious metal layer is generally prepared by sputtering on the surface of the single crystal using ion sputtering or magnetron sputtering equipment. Since relaxor ferroelectric single crystal components must undergo secondary cutting processing, welding and wiring during use, the precious metal layer is very likely to peel off, causing the piezoelectric component to fail. Therefore, high requirements are placed on the bonding quality between the precious metal layer and the crystal. Currently, high-quality relaxor ferroelectric single crystal electrodes are generally obtained by magnetron sputtering, but magnetron sputtering has a high vacuum degree, a long time, and a high cost, which is not conducive to cost control and application promotion of relaxor ferroelectric single crystal electrodes. Ordinary low-vacuum ion sputtering coatings have low reliability and low yield, making it difficult to meet the requirements of actual industrial applications.

[0005] Therefore, it is necessary to develop a method that can solve the problem of low interface bonding strength between the noble metal layer and the relaxor ferroelectric single crystal wafer in the relaxor ferroelectric single crystal electrode and easy peeling of the noble metal layer.

[0006] Summary of the Invention

[0007] The purpose of this application is to provide a relaxor ferroelectric single crystal electrode and its preparation method to solve the problem of low interface bonding strength between the noble metal layer and the relaxor ferroelectric single crystal wafer in relaxor ferroelectric single crystal electrodes and easy peeling of the noble metal layer, thereby improving the yield rate of relaxor ferroelectric single crystal electrodes. The specific technical solution is as follows:

[0008] A first aspect of the present application provides a method for preparing a relaxor ferroelectric single crystal electrode, the method comprising the following steps:

[0009] preparing an abrasive aqueous solution and sandblasting the relaxor ferroelectric single crystal wafer to obtain a sandblasted relaxor ferroelectric single crystal wafer;

[0010] The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 Pa, in a protective gas environment, sputtering a transition metal on the relaxor ferroelectric single crystal wafer after the sandblasting treatment to prepare a transition metal layer;

[0011] The material of the transition metal layer is selected from at least one of a metal element or an alloy; the metal element is selected from at least one of Ti, Zn, Cr, Ni or Co; the alloy is selected from at least one of NiCr or TiAl;

[0012] The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 Pa, in a protective gas environment, sputtering a noble metal on the transition metal layer to prepare a noble metal layer to obtain the relaxor ferroelectric single crystal electrode;

[0013] The material of the noble metal layer is selected from at least one of gold or silver;

[0014] The protective gas is selected from at least one of argon and nitrogen.

[0015] In one embodiment of the present application, the sandblasting process includes: a sandblasting pressure of 0.05-0.3 MPa, a sandblasting angle of 45°-90°, and a sandblasting time of 30-120 s.

[0016] In one embodiment of the present application, the preparation of the abrasive aqueous solution comprises:

[0017] At least one of aluminum oxide, quartz sand, silicon carbide, or zirconium oxide is used as an abrasive to prepare an abrasive aqueous solution; based on the total mass of the abrasive aqueous solution, the mass percentage of the abrasive is 20-35%;

[0018] The particle size Dv90 of the abrasive is 5-300 μm.

[0019] In one embodiment of the present application, the surface roughness Ra of the relaxor ferroelectric single crystal wafer after sandblasting is 100-500 nm.

[0020] In one embodiment of the present application, the material of the relaxor ferroelectric single crystal wafer is selected from lead magnesium niobate-lead titanate or lead indium niobate-lead magnesium niobate-lead titanate; the thickness of the relaxor ferroelectric single crystal wafer is 0.5-4 mm.

[0021] In one embodiment of the present application, the thickness of the transition metal layer is 10-100 nm.

[0022] In one embodiment of the present application, the thickness of the noble metal layer is 20-200 nm.

[0023] In one embodiment of the present application, the conditions for sputtering the transition metal include: a discharge voltage of 1-5 KV, a current of 10-50 mA, and a sputtering time of 30-300 s.

[0024] In one embodiment of the present application, the conditions for sputtering the noble metal include: a discharge voltage of 1-5 KV, a current of 10-100 mA, and a sputtering time of 60-600 s.

[0025] The second aspect of the present application provides a relaxor ferroelectric single crystal electrode prepared according to the preparation method described in the first aspect of the present application.

[0026] Beneficial effects of this application:

[0027] The present application provides a relaxor ferroelectric single crystal electrode and a preparation method thereof to solve the problem that the interface bonding strength between the noble metal layer and the relaxor ferroelectric single crystal wafer in the relaxor ferroelectric single crystal electrode is not high and the noble metal layer is easy to peel off. Specifically, before ion sputtering, the surface roughness of the relaxor ferroelectric single crystal wafer is controlled by sandblasting, and the surface roughness of the relaxor ferroelectric single crystal wafer is regulated by sandblasting. At the same time, the thermal expansion coefficient of the relaxor ferroelectric single crystal wafer and the noble metal layer is quite different, which makes the noble metal layer easy to peel off. The present application prepares a transition metal layer before preparing the noble metal layer, which can reduce the thermal mismatch between the relaxor ferroelectric single crystal wafer and the noble metal layer, thereby improving the interface bonding strength between the metal material layer including the noble metal layer and the transition metal layer and the relaxor ferroelectric single crystal wafer. Through the preparation method of the present application, high-quality relaxor ferroelectric single crystal electrodes can be obtained in a short time and at a low cost, which is conducive to improving the yield rate of relaxor ferroelectric single crystal piezoelectric elements and promoting the application and development of relaxor ferroelectric single crystal piezoelectric elements in devices.

[0028] Of course, it is not necessary to achieve all the advantages described above at the same time when implementing any product or method of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0030] FIG1 is a scanning electron microscope (SEM) photograph of the relaxor ferroelectric single crystal electrode in Example 1;

[0031] FIG2 is a scanning electron microscope (SEM) photograph of the relaxor ferroelectric single crystal electrode in Comparative Example 1. DETAILED DESCRIPTION

[0032] To make the objectives, technical solutions, and advantages of this application more clearly understood, the present application is further described below with reference to the accompanying drawings and examples. It is apparent that the described examples are only some of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the examples in this application are intended to fall within the scope of protection of this application.

[0033] A first aspect of the present application provides a method for preparing a relaxor ferroelectric single crystal electrode, the method comprising the following steps:

[0034] preparing an abrasive aqueous solution and sandblasting the relaxor ferroelectric single crystal wafer to obtain a sandblasted relaxor ferroelectric single crystal wafer;

[0035] The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 Pa, in a protective gas environment, sputtering a transition metal on the relaxor ferroelectric single crystal wafer after the sandblasting treatment to prepare a transition metal layer;

[0036] The material of the transition metal layer is selected from at least one of a metal element or an alloy; the metal element is selected from at least one of Ti, Zn, Cr, Ni or Co; the alloy is selected from at least one of NiCr or TiAl;

[0037] The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 Pa, in a protective gas environment, sputtering a noble metal on the transition metal layer to prepare a noble metal layer to obtain the relaxor ferroelectric single crystal electrode;

[0038] The material of the noble metal layer is selected from at least one of gold or silver;

[0039] The protective gas is selected from at least one of argon and nitrogen.

[0040] In the present application, the relaxor ferroelectric single crystal wafer can be cleaned once before sandblasting to remove dust, organic matter and other contaminants on the surface of the relaxor ferroelectric single crystal wafer. The present application has no special restrictions on the method of one cleaning, as long as the purpose of the present application can be achieved. For example, an ultrasonic cleaning machine can be used for one cleaning. The present application does not impose any restrictions on the ultrasonic frequency, ultrasonic power, solvent, ultrasonic time, etc. during cleaning by the above-mentioned ultrasonic cleaning machine, as long as the purpose of the present application can be achieved. For example, the ultrasonic frequency of the ultrasonic cleaning machine can be 20-40KHz, the ultrasonic power can be 200-500W, the solvent can be anhydrous ethanol or acetone, and the ultrasonic time can be 30-60min.

[0041] In the present application, for sandblasting, if the relaxor ferroelectric single crystal wafer is large, the nozzle position of the sandblasting equipment can be automatically moved to ensure that the entire crystal surface of the relaxor ferroelectric single crystal wafer is uniformly sandblasted.

[0042] In the present application, before sputtering the transition metal on the relaxor ferroelectric single crystal wafer after the sandblasting treatment, the relaxor ferroelectric single crystal wafer after the sandblasting treatment can be subjected to a secondary cleaning to remove the abrasive and other contaminants used for sandblasting. The present application has no particular restrictions on the method of secondary cleaning, as long as the purpose of the present application can be achieved. For example, an ultrasonic cleaning machine can be used for secondary cleaning. The present application does not impose any restrictions on the ultrasonic frequency, ultrasonic power, solvent, ultrasonic time, etc. during cleaning by the above-mentioned ultrasonic cleaning machine, as long as the purpose of the present application can be achieved. For example, the ultrasonic frequency of the ultrasonic cleaning machine can be 20-40KHz, the ultrasonic power can be 200-500W, the solvent can be anhydrous ethanol or acetone, and the ultrasonic time can be 30-60min.

[0043] The ion sputtering method described in the present application uses a relatively high vacuum degree, which is conducive to producing a relaxor ferroelectric single crystal electrode with a high yield in a short time and at a low cost.

[0044] In the present application, the metal material layer includes the transition metal layer and the noble metal layer. During the process of preparing the noble metal layer on the transition metal layer, a small amount of noble metal may penetrate into the transition metal layer, thereby tightly fusing the transition metal layer and the noble metal layer.

[0045] In one embodiment of the present application, the sandblasting process includes: a sandblasting pressure of 0.05-0.3 MPa, a sandblasting angle of 45°-90°, and a sandblasting time of 30-120 s.

[0046] In one embodiment of the present application, the preparation of the abrasive aqueous solution comprises:

[0047] At least one of aluminum oxide, quartz sand, silicon carbide, or zirconium oxide is used as an abrasive to prepare an abrasive aqueous solution; based on the total mass of the abrasive aqueous solution, the mass percentage of the abrasive is 20-35%;

[0048] The particle size Dv90 of the abrasive is 5-300 μm. Dv90 refers to the particle size corresponding to when the cumulative volume distribution percentage of the abrasive reaches 90%.

[0049] In one embodiment of the present application, the surface roughness Ra of the relaxor ferroelectric single crystal wafer after sandblasting is 100-500 nm.

[0050] In one embodiment of the present application, the material of the relaxor ferroelectric single crystal wafer is selected from lead magnesium niobate-lead titanate or lead indium niobate-lead magnesium niobate-lead titanate; the thickness of the relaxor ferroelectric single crystal wafer is 0.5-4 mm.

[0051] In the present application, there is no particular limitation on the shape of the relaxor ferroelectric single crystal wafer, as long as the purpose of the present application can be achieved. For example, the shape of the relaxor ferroelectric single crystal wafer can be a cuboid or a cylinder. There is no particular limitation on the size of the relaxor ferroelectric single crystal wafer, and the desired size can be selected as needed.

[0052] In one embodiment of the present application, the thickness of the transition metal layer is 10-100 nm.

[0053] In one embodiment of the present application, the thickness of the noble metal layer is 20-200 nm.

[0054] In one embodiment of the present application, the conditions for sputtering the transition metal include: a discharge voltage of 1-5 KV, a current of 10-50 mA, and a sputtering time of 30-300 s.

[0055] In one embodiment of the present application, the conditions for sputtering the noble metal include: a discharge voltage of 1-5 KV, a current of 10-100 mA, and a sputtering time of 60-600 s.

[0056] The present application provides a method for preparing a relaxor ferroelectric single crystal electrode, which solves the problems of low interface bonding strength between the noble metal layer and the relaxor ferroelectric single crystal wafer in the relaxor ferroelectric single crystal electrode and easy peeling of the noble metal layer, thereby achieving low-cost and high-quality relaxor ferroelectric single crystal electrodes.

[0057] The second aspect of the present application provides a relaxor ferroelectric single crystal electrode prepared according to the preparation method described in the first aspect of the present application.

[0058] Example

[0059] The following examples and comparative examples are provided to more specifically illustrate the embodiments of the present invention. Various tests and evaluations were performed according to the following methods. In addition, unless otherwise specified, "parts" and "%" are based on mass.

[0060] Test methods and equipment:

[0061] Scanning electron microscope test:

[0062] The interface between the metal material layer and the relaxor ferroelectric single crystal wafer in the relaxor ferroelectric single crystal electrode was observed and tested by a scanning electron microscope (SEM, model: EVO18, manufacturer: ZEISS).

[0063] Surface roughness test:

[0064] An atomic force microscope (Model: Dimension, Manufacturer: Bruker, Germany) was used to measure the surface roughness of the relaxor ferroelectric single crystal wafer after sandblasting.

[0065] Interface bonding strength test:

[0066] Characterizing the interfacial bonding strength involves two steps. First, a preliminary qualitative evaluation of the interfacial bonding strength between the metal layer and the relaxor ferroelectric single crystal wafer in the relaxor ferroelectric single crystal electrode is performed by applying and then removing adhesive tape (brand: 3M Pressure Sensitive VHB, manufacturer: 3M China). If the adhesive tape is applied and then removed, the metal layer is damaged, indicating that the interfacial bonding strength between the metal layer and the relaxor ferroelectric single crystal wafer is too poor to be worth further testing. The second step is to use a special mold to secure the relaxor ferroelectric single crystal electrode. This secured relaxor ferroelectric single crystal electrode is clamped in a universal mechanical testing machine (model: Instron 5566, manufacturer: Instron). The shear failure force at the interface between the metal layer and the relaxor ferroelectric single crystal wafer is measured. The shear failure force is divided by the clamping area to obtain the interfacial bonding strength.

[0067] Example 1

[0068] A rectangular PMN-PT relaxor ferroelectric single crystal wafer (manufacturer: Beijing Sinoma Synthetic Crystal Research Institute Co., Ltd.) with a size of 45 mm × 10 mm × 1 mm (thickness of 1 mm) was placed in an ultrasonic cleaning machine and ultrasonically cleaned for 30 minutes at a frequency of 40 kHz and a power of 300 W using anhydrous ethanol as a solvent to remove dust, organic matter and other contaminants on the surface. Alumina with a Dv90 of 10 μm was used as an abrasive, and an abrasive aqueous solution with a mass percentage of abrasive was prepared. The cleaned relaxor ferroelectric single crystal wafer was placed in an ultrasonic cleaning machine. The wafer was placed in an automated sandblasting machine (model: MC800SS-10A, manufacturer: Dongguan Mingchuan Automation Equipment Co., Ltd.) for sandblasting to obtain a sandblasted relaxor ferroelectric single crystal wafer; the sandblasting pressure was 0.2 MPa, the sandblasting angle was 90°, and the sandblasting time was 120 s; the sandblasted relaxor ferroelectric single crystal wafer was again placed in the above-mentioned ultrasonic cleaning machine for cleaning to remove sandblasting abrasive and other contamination; after testing, the surface roughness Ra of the sandblasted relaxor ferroelectric single crystal wafer was 120 nm;

[0069] The ion sputtering method was used in a vacuum of 1×10 -1 In a Pa and argon environment, a transition metal Cr was sputtered on a sandblasted relaxor ferroelectric single crystal wafer to prepare a Cr transition metal layer with a thickness of 50 nm; the discharge voltage of the sputtering transition metal Cr was 2 kV, the current was 20 mA, and the sputtering time was 120 s;

[0070] The ion sputtering method was used in a vacuum of 1×10 -1 In a Pa and argon environment, noble metal gold was sputtered on the Cr transition metal layer to prepare a gold noble metal layer with a thickness of 100 nm, and a relaxor ferroelectric single crystal electrode was obtained; the discharge voltage of the sputtering noble metal gold was 5 kV, the current was 30 mA, and the sputtering time was 240 s.

[0071] Example 2

[0072] A cylindrical PIN-PMN-PT relaxor ferroelectric single crystal wafer (manufacturer: Beijing Zhongcai Artificial Crystal Research Institute Co., Ltd.) with a diameter of 20 mm and a thickness of 3 mm was placed in an ultrasonic cleaning machine and ultrasonically cleaned for 30 minutes at a frequency of 30 kHz and a power of 200 W using acetone as a solvent to remove surface contamination such as dust and organic matter. Quartz sand with a Dv90 of 20 μm was used as an abrasive, and an abrasive aqueous solution containing 30% of the abrasive by mass was prepared. The cleaned relaxor ferroelectric single crystal wafer was placed in an automated sandblasting equipment for sandblasting to obtain a sandblasted relaxor ferroelectric single crystal wafer. The sandblasting pressure of the sandblasting treatment was 0.1 MPa, the sandblasting angle was 60°, and the sandblasting time was 90 s. The sandblasted relaxor ferroelectric single crystal wafer was again placed in the above-mentioned ultrasonic cleaning machine for cleaning to remove the sandblasting abrasive and other contamination. After testing, the surface roughness Ra of the sandblasted relaxor ferroelectric single crystal wafer was 200 nm.

[0073] The ion sputtering method was used in a vacuum of 1×10 -1 In a Pa and argon environment, a transition metal Ti was sputtered on a sandblasted relaxor ferroelectric single crystal wafer to prepare a Ti transition metal layer with a thickness of 100 nm; the discharge voltage of the sputtering transition metal Ti was 3 kV, the current was 30 mA, and the sputtering time was 240 s;

[0074] The ion sputtering method was used in a vacuum of 1×10 -2 In a Pa and argon environment, noble metal gold was sputtered on the Ti transition metal layer to prepare a gold noble metal layer with a thickness of 200 nm, and a relaxor ferroelectric single crystal electrode was obtained; the discharge voltage of the sputtering noble metal gold was 5 kV, the current was 50 mA, and the sputtering time was 300 s.

[0075] Example 3

[0076] The process is the same as that of Example 1 except that the abrasive is replaced by silicon carbide with a Dv90 of 5 μm and the material of the transition metal layer is replaced by NiCr alloy.

[0077] Example 4

[0078] The process is the same as that of Example 1 except that the abrasive is replaced by zirconium oxide with a Dv90 of 280 μm and the material of the transition metal layer is replaced by TiAl alloy.

[0079] Comparative Example 1

[0080] The process is the same as that of Example 1 except that the simultaneous cleaning is performed but the sandblasting is not performed and the transition metal Cr is not sputtered.

[0081] Comparative Example 2

[0082] The same procedures as in Example 1 were performed except that the cleaning was performed simultaneously but the sandblasting was not performed.

[0083] Comparative Example 3

[0084] The process is the same as that of Example 1 except that the transition metal Cr is not sputtered.

[0085] The performance test results of the relaxor ferroelectric single crystal electrode are shown in Table 1.

[0086] Table 1 Note: “ / ” in Table 1 indicates that the material or parameter does not exist, and 12.3* in Comparative Example 1 and Comparative Example 2 indicates that the roughness Ra of the relaxor ferroelectric single crystal wafer after cleaning is 12.3 nm.

[0087] Figure 1 is a scanning electron microscope photograph of the relaxor ferroelectric single crystal electrode in Example 1. As can be seen from Figure 1, the relaxor ferroelectric single crystal wafer that has been sandblasted and has a transition metal layer has a good bond between its metal material layer, including the noble metal layer 12 and the transition metal layer 11, and the relaxor ferroelectric single crystal wafer 10. Figure 2 is a scanning electron microscope photograph of the relaxor ferroelectric single crystal electrode in Comparative Example 1. As can be seen from Figure 2, the relaxor ferroelectric single crystal wafer that has not been sandblasted and has no transition metal layer has a large gap between its metal material layer 21 and the relaxor ferroelectric single crystal wafer 20, as shown by the circle in Figure 2. As can be seen from Table 1 and Figures 1 and 2, the preparation method of the relaxor ferroelectric single crystal electrode of the present application is adopted, and the surface roughness of the relaxor ferroelectric single crystal wafer is controlled by sandblasting. The surface roughness of the relaxor ferroelectric single crystal wafer is regulated by sandblasting. At the same time, the thermal expansion coefficients of the relaxor ferroelectric single crystal wafer and the precious metal layer are quite different, which makes the precious metal layer easy to peel off. The present application prepares the transition metal layer before preparing the precious metal layer, which can reduce the thermal mismatch between the relaxor ferroelectric single crystal wafer and the precious metal layer, thereby improving the interface bonding strength between the metal material layer including the precious metal layer and the transition metal layer and the relaxor ferroelectric single crystal wafer, thereby achieving high-quality relaxor ferroelectric single crystal electrodes in a short time and at low cost.

[0088] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A method for preparing a relaxor ferroelectric single crystal electrode, characterized in that: The preparation method comprises the following steps: Abrasive water solution is prepared to perform sandblasting on the relaxor ferroelectric single crystal wafer to obtain a sandblasted relaxor ferroelectric single crystal wafer; The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 In a protective gas environment of Pa, sputtering a transition metal on the relaxor ferroelectric single crystal wafer after the sandblasting treatment to prepare a transition metal layer; The material of the transition metal layer is selected from at least one of a metal element or an alloy; the metal element is selected from at least one of Ti, Zn, Cr, Ni or Co; the alloy is selected from at least one of NiCr or TiAl; The ion sputtering method was used in a vacuum of 1×10 -1 -1×10 -2 In a protective gas environment of Pa, in which a noble metal is sputtered on the transition metal layer to prepare a noble metal layer, the relaxor ferroelectric single crystal electrode is obtained; The material of the noble metal layer is selected from at least one of gold or silver; The protective gas is selected from at least one of argon and nitrogen.

2. The preparation method according to claim 1, characterized in that: The sandblasting process includes: a sandblasting pressure of 0.05-0.3Mpa, a sandblasting angle of 45°-90°, and a sandblasting time of 30-120s.

3. The preparation method according to claim 1, characterized in that: The abrasive aqueous solution preparation comprises: At least one of aluminum oxide, quartz sand, silicon carbide or zirconium oxide is used as an abrasive to prepare an abrasive aqueous solution; based on the total mass of the abrasive aqueous solution, the mass percentage of the abrasive is 20-35%; The particle size Dv90 of the abrasive is 5-300 μm.

4. The preparation method according to claim 1, characterized in that: The surface roughness Ra of the relaxor ferroelectric single crystal wafer after the sandblasting treatment is 100-500nm.

5. The preparation method according to claim 1, characterized in that: The material of the relaxor ferroelectric single crystal wafer is selected from lead magnesium niobate-lead titanate or lead indium niobate-lead magnesium niobate-lead titanate; the thickness of the relaxor ferroelectric single crystal wafer is 0.5-4 mm.

6. The preparation method according to claim 1, characterized in that: The thickness of the transition metal layer is 10-100 nm.

7. The preparation method according to claim 1, characterized in that: The thickness of the noble metal layer is 20-200 nm.

8. The preparation method according to any one of claims 1 to 7, characterized in that: The conditions for sputtering the transition metal include: a discharge voltage of 1-5 KV, a current of 10-50 mA, and a sputtering time of 30-300 s.

9. The preparation method according to any one of claims 1 to 7, characterized in that: The conditions for sputtering the noble metal include: a discharge voltage of 1-5 KV, a current of 10-100 mA, and a sputtering time of 60-600 s.

10. A relaxor ferroelectric single crystal electrode prepared by the preparation method according to any one of claims 1 to 9.

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