Magnetron forming method, magnetron, and magnetron sputtering device

By simulating and calculating the relationship between the horizontal magnetic field intensity of the magnetron's magnetic field arc on the target surface and the corrosion probability, the magnetic pole arrangement was optimized, which solved the problems of low target utilization and high design cost, and achieved more efficient target utilization and thin film uniformity.

WO2025124330A9PCT designated stage expired Publication Date: 2025-10-16BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
PCT/CN2024/137728
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-12-14
Filing Date
2024-12-09
Publication Date
2025-10-16

AI Technical Summary

Technical Problem

In existing magnetron sputtering equipment, the probability of corrosion at the target surface where the magnetic field is dense is higher than at other locations, resulting in low target utilization, high magnetron design cost and long cycle.

Method used

The horizontal magnetic field intensity at each point on the magnetic field arc of the magnetron at any radius on the target surface is obtained through simulation. Combined with the relationship between the horizontal magnetic field intensity and the target corrosion probability, the corrosion probability at each radius on the target surface is calculated, and the magnetic pole arrangement of the magnetron is adjusted to optimize the target utilization.

Benefits of technology

The design cost and cycle of the magnetron are reduced, the utilization rate of the target material and the uniformity of the film are improved, and the uneven corrosion of the target material is reduced.

✦ Generated by Eureka AI based on patent content.

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Abstract

Disclosed in the present application are a magnetron forming method, a magnetron, and a magnetron sputtering device. The forming method comprises: on the basis of the arrangement of magnetic poles of a magnetron, obtaining the horizontal magnetic field intensity of the magnetron at each point on a magnetic field arc at any radius of a surface of a target; obtaining an erosion probability at any radius of the surface of the target on the basis of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius of the surface of the target and a relationship between the horizontal magnetic field intensity and the erosion probability of the target; and determining the arrangement of the magnetic poles of the magnetron on the basis of erosion probabilities at a plurality of radii of the surface of the target. Therefore, it is not necessary to use the target to conduct magnetron sputtering experiments to obtain erosion data of the surface of the target, thereby reducing the design costs of the magnetron and shortening the design cycle of the magnetron.
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Description

Method for forming magnetron, magnetron and magnetron sputtering device TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, in particular to a method for forming a magnetron, a magnetron and a magnetron sputtering device. BACKGROUND

[0002] Magnetron sputtering belongs to a kind of physical vapor deposition (PVD), which generates plasma including positive ions and new electrons by making electrons collide with process gas (such as argon), and sputters materials in the target and deposits them into a thin film by making positive ions in the plasma collide with the target.

[0003] In order to improve the sputtering rate, a magnetron is usually arranged at the back of the target of the magnetron sputtering device, and the motion trajectory of the electrons is extended by the magnetic field generated by the magnetron to increase the collision probability of the electrons and the process gas and improve the plasma density. However, because the plasma density at the position where the magnetic field is dense on the surface of the target is higher than the plasma density at other positions on the surface of the target, and the corrosion probability at the position where the plasma density is high is greater than the corrosion probability at other positions, the corrosion probability at the position where the magnetic field is dense on the surface of the target is greater than the corrosion probability at other positions on the surface of the target, resulting in a low material utilization rate at other positions on the surface of the target.

[0004] Although the utilization rate of the target can be improved by designing a magnetron with a specific magnetic pole distribution pattern, in the process of designing the magnetron, corrosion data of the corresponding target need to be obtained according to magnetron sputtering experimental data, and then it is determined whether the design of the magnetron meets the requirements. However, because the cost of the target, especially the noble metal target, is high, and the time of the magnetron sputtering experiment is also long, the design cost of the magnetron is high, and the design cycle is long. SUMMARY

[0005] The present application discloses a method for forming a magnetron, a magnetron and a magnetron sputtering device to reduce the design cost and design cycle of the magnetron.

[0006] In a first aspect, the present application discloses a method for forming a magnetron, comprising: obtaining the horizontal magnetic field intensity of each point on the magnetic field arc line at any radius on the surface of a target according to the magnetic pole arrangement of the magnetron; obtaining the corrosion probability at any radius on the surface of the target according to the horizontal magnetic field intensity of each point on the magnetic field arc line at any radius on the surface of the target and the relationship between the horizontal magnetic field intensity and the corrosion probability of the target; and determining the magnetic pole arrangement of the magnetron according to the corrosion probability at multiple radii on the surface of the target.

[0007] In some embodiments, obtaining the corrosion probability at any radius of the target surface based on the horizontal magnetic field strength at each point on the magnetic field arc at any radius of the target surface and the relationship between the horizontal magnetic field strength and the target corrosion probability includes: obtaining the radial corrosion probability at any radius of the target surface based on the radial component of the horizontal magnetic field strength at each point on the magnetic field arc at any radius of the target surface and the relationship between the horizontal magnetic field strength and the target corrosion probability in a static state of the magnetron; obtaining the tangential corrosion probability at any radius of the target surface based on the tangential component of the horizontal magnetic field strength at each point on the magnetic field arc at any radius of the target surface and the relationship between the horizontal magnetic field strength and the target corrosion probability in a rotating state of the magnetron; obtaining the corrosion probability at any radius of the target surface based on the radial corrosion probability and the tangential corrosion probability at any radius of the target surface, the corrosion probability at any radius of the target surface being equal to the sum of the radial corrosion probability and the tangential corrosion probability at the radius.

[0008] In some embodiments, obtaining the radial corrosion probability at any radius on the target surface according to the radial component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability in a static state of the magnetron includes:

[0009] According to the radial component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the functional relationship E radial (r)=∑B xyr (L Arc (r)) / Max(∑B xyr (L Arc (r))), obtain the radial corrosion probability at any radius of the target surface; wherein r represents any radius of the target surface, B xyr (L Arc (r)) represents the radial component of the horizontal magnetic field intensity at any point on the magnetic field arc at any radius on the target surface, ∑B xyr (L Arc (r)) represents the sum of the radial components of the horizontal magnetic field strength at each point on the magnetic field arc at any radius on the target surface, Max(∑B xyr (L Arc (r))) represents the maximum value of the sum of the radial components of the horizontal magnetic field intensity at each point on the magnetic field arc at each radius on the target surface, E radial (r) represents the radial corrosion probability at any radius on the target surface.

[0010] In some embodiments, the tangential erosion probability at any radius of the target surface is obtained according to the tangential component of the horizontal magnetic field intensity of each point on the magnetic field arc at the radius of the target surface and the relationship between the horizontal magnetic field intensity in the magnetron rotation state and the target erosion probability, including:

[0011] the tangential component of the horizontal magnetic field intensity of each point on the magnetic field arc at the radius of the target surface and the function relationship the tangential erosion probability at any radius of the target surface is obtained;

[0012] wherein r represents any radius of the target surface, B xyv (L Arc (r)) represents the tangential component of the horizontal magnetic field intensity of each point on the magnetic field arc at any radius of the target surface, ∑B xyv (L Arc (r)) represents the sum of the tangential components of the horizontal magnetic field intensity of each point on the magnetic field arc at the radius of the target surface, Max(∑B xyv (L Arc (r))) represents the maximum value of the sum of the tangential components of the horizontal magnetic field intensity of each point on the magnetic field arc at each radius of the target surface, E vertical (r) represents the tangential erosion probability at any radius of the target surface.

[0013] In some embodiments, the magnet pole arrangement of the magnetron is determined according to the erosion probabilities at the multiple radii of the target surface, including: the utilization rate of the target is obtained according to the erosion probabilities at the multiple radii of the target surface; and the magnet pole arrangement of the magnetron is adjusted if the utilization rate of the target is less than a target utilization rate.

[0014] In some embodiments, the utilization rate of the target is obtained according to the erosion probabilities at the multiple radii of the target surface, including: the erosion probability curve or the erosion area proportion of the target surface is obtained according to the erosion probabilities at the multiple radii of the target surface; and the utilization rate of the target is obtained according to the erosion probability curve or the erosion area proportion of the target surface.

[0015] In some embodiments, further including: the uniformity of a thin film formed by the magnetron sputtering device with the magnetron is obtained if the utilization rate of the target is greater than or equal to the target utilization rate; and the magnet pole arrangement of the magnetron is fine-tuned if the uniformity of the thin film is less than a target uniformity.

[0016] In some embodiments, the adjusting the pole arrangement of the magnetron comprises: adjusting the pole arrangement at a corresponding radius according to a maximum or minimum etching probability of the etching probabilities at the plurality of radii of the target surface; and / or adjusting at least one of the number of poles, the arrangement pattern, the number of spirals, and the spiral curvature variation of the magnetron.

[0017] In a second aspect, the present application discloses a magnetron formed by the forming method of any one of the above.

[0018] In a third aspect, the present application discloses a magnetron sputtering device comprising the magnetron of any one of the above.

[0019] The forming method of the magnetron, the magnetron, and the magnetron sputtering device disclosed by the present application can obtain the horizontal magnetic field intensity of each point on the magnetic field arc at any radius of the target surface of the magnetron according to the pole arrangement of the magnetron, obtain the etching probability at any radius of the target surface according to the horizontal magnetic field intensity of each point on the magnetic field arc at any radius of the target surface and the relationship between the horizontal magnetic field intensity and the etching probability of the target, and determine the pole arrangement of the magnetron according to the etching probabilities at the plurality of radii of the target surface, so that the etching data of the target surface can be obtained without using the target for magnetron sputtering experiments, and the design cost of the magnetron can be reduced and the design period of the magnetron can be shortened. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background art, the drawings needed to be used in the embodiments of the present application or the background art will be described below.

[0021] FIG. 1 is a structural schematic diagram of a magnetron sputtering device disclosed by an embodiment of the present application.

[0022] FIG. 2 is a flowchart of a forming method of a magnetron disclosed by an embodiment of the present application.

[0023] FIG. 3 is a schematic diagram of the distribution of the horizontal magnetic field intensity of each point on a target surface of a magnetron disclosed by an embodiment of the present application.

[0024] FIG. 4 is a schematic diagram of the distribution of the horizontal magnetic field intensity of each point on each magnetic field arc of a target surface of a magnetron disclosed by some other embodiments of the present application.

[0025] FIG. 5 is a schematic diagram of the distribution of each magnetic field arc of a target surface disclosed by an embodiment of the present application.

[0026] FIG. 6 is a schematic diagram of a magnetron disclosed by some other embodiments of the present application.

[0027] FIG. 7 is a schematic diagram of the radial component distribution of the horizontal magnetic field intensity of each point on the magnetic field arc at a plurality of radii of a target surface disclosed by an embodiment of the present application.

[0028] FIG. 8 is a schematic diagram of a tangential component distribution of horizontal magnetic field strength of each point on the magnetic field arc of the target surface according to an embodiment of the present application.

[0029] FIG. 9 is a schematic diagram of a curve of the radial corrosion probability changing with the radius according to an embodiment of the present application.

[0030] FIG. 10 is a schematic diagram of a curve of the tangential corrosion probability changing with the radius according to an embodiment of the present application.

[0031] FIG. 11 is a schematic diagram of a curve of the corrosion probability changing with the radius and a curve of the actual corrosion probability changing with the radius according to an embodiment of the present application.

[0032] FIG. 12 is a schematic diagram of the relationship between the horizontal magnetic field strength and the radial component and the tangential component of each point on each magnetic field arc of the target surface according to an embodiment of the present application. DETAILED DESCRIPTION

[0033] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0034] As shown in FIG. 1, the magnetron sputtering device includes a sputtering chamber 1, which includes a chamber body 2, a process assembly 3 and a cathode sputtering system 4. The chamber body 2 includes a process gas interface 8 for introducing process gas (such as argon) into the chamber, a chamber wall 9, a susceptor 11 for carrying a wafer 10 and other workpieces to be processed, and a vacuum system 12 for evacuating the chamber to a vacuum state. The process assembly 3 includes a lower inner liner 13, a deposition ring 14, a cover ring 15 and an upper inner liner 16, and can be arranged in the chamber body 2 to shield the side walls of the chamber body 2 and prevent the side walls of the chamber body 2 from being contaminated. The cathode sputtering system 4 includes a magnetron 5, a target material 6 and a direct current power supply 7.

[0035] Before the magnetron sputtering process begins, a workpiece, such as a wafer 10, is placed on a susceptor 11. The chamber is then evacuated to a vacuum state by a vacuum system 12. Once the chamber reaches a specified vacuum level, a certain amount of argon gas is introduced through the process gas port 8 as the process gas. A negative bias voltage is applied to the target 6 via a DC power supply 7, ionizing the argon gas in the chamber. The magnetic field generated by the magnetron 5 binds electrons, forming a stable plasma 17 in the dense area of ​​the magnetic field 18 on the surface of the target 6. Under the influence of the electric field, the argon ions in the plasma 17 continuously bombard the surface of the target 6, causing atoms from the target 6 to be sputtered and deposited on the surface of the workpiece, such as the wafer 10, to form a coating.

[0036] Currently, magnetron 5 is typically controlled to rotate during magnetron sputtering equipment operation to improve the uniformity of target erosion and target utilization by increasing the uniformity of the magnetic field generated by magnetron 5. However, the uniformity of target erosion and utilization still needs to be further improved. Although it is possible to improve target erosion uniformity and target utilization by designing a magnetron with a specific magnetic pole distribution pattern, the magnetron design process requires obtaining target erosion data based on magnetron sputtering experiments to determine whether the magnetron design meets the requirements. This results in high magnetron design costs and a long design cycle.

[0037] The study found that electrons are mainly confined in the magnetron track near the target surface by the horizontal magnetic field of the magnetron, resulting in the plasma concentration in the corresponding area between the target surface and the magnetron track being much higher than the plasma concentration in other areas of the target surface, resulting in the corrosion probability in the corresponding area between the target surface and the magnetron track being much higher than the corrosion probability in other areas of the target surface. Therefore, it can be determined that the plasma distribution is similar to the horizontal magnetic field distribution, and the relationship between the horizontal magnetic field intensity and the corrosion probability is obtained based on the relationship between the plasma density and the corrosion probability, and then the corrosion probability of the target surface is obtained based on the relationship between the horizontal magnetic field intensity and the corrosion probability.

[0038] Based on this, the present application discloses a method for forming a magnetron, by obtaining the horizontal magnetic field strength of each point on the magnetic field arc of the magnetron at any radius on the target surface, and obtaining the corrosion probability at any radius on the target surface based on the horizontal magnetic field strength of each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field strength and the target corrosion probability. Therefore, there is no need to use the target material to conduct a magnetron sputtering experiment to obtain the corrosion data of the target surface, thereby reducing the design cost of the magnetron and shortening the design cycle of the magnetron.

[0039] It should be noted that the horizontal magnetic field strength of each point on the magnetic field arc line of the magnetron at any radius of the target surface can be obtained by simulating the magnetron, or can be obtained by other methods, and the application does not make any limitation. In addition, the relationship between the horizontal magnetic field strength and the target corrosion probability can be a functional relationship, or other relationships, and the application also does not make any limitation.

[0040] In the following, the formation method of the magnetron disclosed in the embodiments of the application is specifically described by taking the simulation of the magnetron as an example. As shown in FIG. 2, the formation method comprises:

[0041] S101: According to the pole arrangement of the magnetron, the horizontal magnetic field strength of each point on the magnetic field arc line of the magnetron at any radius of the target surface is obtained by simulation.

[0042] In the embodiments of the application, the simulation model of the magnetron is established, and the horizontal magnetic field strength of each point on the magnetic field arc line of the magnetron at multiple radii of the target surface is obtained by simulation, so as to obtain the corrosion probability at the multiple radii of the target surface according to the functional relationship between the horizontal magnetic field strength and the target corrosion probability.

[0043] In some embodiments of the application, the simulation model is established according to the pole arrangement of the magnetron designed initially, and the horizontal magnetic field strength of each point on the magnetic field arc line of the magnetron at any radius of the target surface is obtained by simulation according to the DC magnetron sputtering principle and the simulation model.

[0044] In some embodiments, the horizontal magnetic field strength B10-B1n of the magnetron at each point of the target surface shown in FIG. 3 can be obtained by simulation according to the DC magnetron sputtering principle and the simulation model, and then the horizontal magnetic field strength B20-B2n of each point on the magnetic field arc line of the magnetron at any radius of the target surface is obtained according to the horizontal magnetic field strength B10-B1n of the magnetron at each point of the target surface, that is, the horizontal magnetic field strength point array B20-B2n of the magnetic field arc line of the magnetron at each radius of the target surface is obtained.

[0045] Of course, the application is not limited to this, and in other embodiments, the horizontal magnetic field strength B20-B2n of each point on the magnetic field arc line of the magnetron at any radius of the target surface shown in FIG. 4 can be directly obtained by simulation according to the DC magnetron sputtering principle and the simulation model, that is, the horizontal magnetic field strength point array B20-B2n of the magnetic field arc line of the magnetron at each radius of the target surface is obtained. Wherein, n is an integer greater than 2.

[0046] As shown in FIG. 5, the target 6 surface is at a plurality of radii where the target 6 surface and the target center O distance is different from a plurality of annular. The magnetic field arc at any radius is the overlap line of the annular at any radius and the horizontal magnetic field strength distribution map. Each point on the magnetic field arc is obtained by dividing the magnetic field arc at equal arc length intervals or equal angle intervals.

[0047] It should be noted that the embodiments shown in FIGS. 3-5 are only taken as examples of circular target and heart-shaped horizontal magnetic field strength distribution map of magnetron on the target surface, of course, the present application is not limited thereto, in some other embodiments, the horizontal magnetic field strength distribution map can also be the magnetic field distribution map of the spiral magnetron shown in FIG. 6. Wherein, the magnetic field strength distribution map is determined by the magnetic pole distribution map, and the magnetic field strength distribution map can be the same as the magnetic pole distribution map.

[0048] S102: According to the horizontal magnetic field strength of each point on the magnetic field arc at any radius of the target surface and the functional relationship between the horizontal magnetic field strength and the target corrosion probability, the corrosion probability at any radius of the target surface is obtained.

[0049] It can be understood that because the plasma density distribution is mainly determined by the horizontal magnetic field strength distribution, the plasma density distribution map is similar to the horizontal magnetic field strength distribution map, according to the horizontal magnetic field strength of each point on the magnetic field arc at each radius on the horizontal magnetic field strength distribution map and the functional relationship between the horizontal magnetic field strength and the target corrosion probability, the corrosion probability at each radius of the target surface can be obtained.

[0050] In some embodiments of the present application, if the magnetron is always in a stationary state during the operation of the magnetron sputtering device, the corrosion probability of the target surface can be obtained according to the corresponding relationship between the horizontal magnetic field strength and the target corrosion probability of the magnetron in the stationary state; if the magnetron is always in a rotating state during the operation of the magnetron sputtering device, the corrosion probability of the target surface can be obtained according to the corresponding relationship between the horizontal magnetic field strength and the target corrosion probability of the magnetron in the rotating state.

[0051] However, the inventors have found that although the magnetron is always in a rotating state during the operation of the magnetron sputtering device, the radial component of the horizontal magnetic field is independent of the angular velocity, and the tangential component of the horizontal magnetic field is positively correlated with the angular velocity, and if only the corresponding relationship between the horizontal magnetic field strength and the target corrosion probability of the magnetron in the rotating state is used to obtain the corrosion probability of the target surface, the accuracy of the corrosion probability will be low.

[0052] Therefore, in order to improve the accuracy of the corrosion probability, the function relationship between the horizontal magnetic field intensity in the static state of the magnetron and the target corrosion probability can be considered as the function relationship between the radial component of the horizontal magnetic field intensity and the target corrosion probability, and the radial corrosion probability of the target surface can be obtained accordingly. The corresponding relationship between the horizontal magnetic field intensity in the rotating state of the magnetron and the target corrosion probability can be considered as the corresponding relationship between the tangential component of the horizontal magnetic field intensity and the target corrosion probability, and the tangential corrosion probability of the target surface can be obtained accordingly. Then, the corrosion probability of the target surface can be obtained according to the radial corrosion probability and the tangential corrosion probability of the target surface.

[0053] It should be noted that the horizontal magnetic field can be divided into a radial magnetic field and a tangential magnetic field according to the rotating direction of the magnetron. As shown in FIG. 12, the radial component of the horizontal magnetic field intensity is equal to the product of the horizontal magnetic field intensity and cosθ, and the tangential component of the horizontal magnetic field intensity is equal to the product of the horizontal magnetic field intensity and sinθ, where θ represents the included angle between the horizontal magnetic field direction and the radial direction. The radial component of the horizontal magnetic field intensity of each point on the magnetic field arc line of the magnetron at any radius of the target surface is shown in FIG. 7, and the tangential component of the horizontal magnetic field intensity of each point on the magnetic field arc line of the magnetron at any radius of the target surface is shown in FIG. 8.

[0054] Therefore, in some embodiments of the present application, the radial corrosion probability at any radius of the target surface can be obtained according to the radial component of the horizontal magnetic field intensity of each point on the magnetic field arc line at the radius and the function relationship between the horizontal magnetic field intensity in the static state of the magnetron and the target corrosion probability. The tangential corrosion probability at any radius of the target surface can be obtained according to the tangential component of the horizontal magnetic field intensity of each point on the magnetic field arc line at the radius and the function relationship between the horizontal magnetic field intensity in the rotating state of the magnetron and the target corrosion probability. The corrosion probability at any radius of the target surface can be obtained according to the radial corrosion probability and the tangential corrosion probability at the radius, and the corrosion probability at any radius of the target surface is equal to the sum of the radial corrosion probability and the tangential corrosion probability at the radius.

[0055] In some embodiments of the present application, the radial corrosion probability at any radius of the target surface can be obtained according to the radial component of the horizontal magnetic field intensity of each point on the magnetic field arc line at the radius and the function relationship E radial (r)=∑B xyr (L Arc (r)) / Max(∑B xyr (L Arc (r))).

[0056] where r represents any radius of the target surface, B xyr (L Arc (r) represents the radial component of the horizontal magnetic field intensity of any point on the magnetic field arc line at any radius of the target surface, and ∑Bxyr (L Arc (r)) represents the sum of the radial components of the horizontal magnetic field strength of each point on the magnetic field arc line at any radius of the target surface, Max(∑B xyr (L Arc (r))) represents the maximum value of the sum of the radial components of the horizontal magnetic field strength of each point on the magnetic field arc line at each radius of the target surface, E radial (r) represents the radial corrosion probability at any radius of the target surface.

[0057] In some embodiments of the present application, the tangential corrosion probability at any radius of the target surface can be obtained according to the tangential components of the horizontal magnetic field strength of each point on the magnetic field arc line at any radius of the target surface and the function relationship (r) represents the tangential corrosion probability at any radius of the target surface.

[0058] wherein r represents any radius of the target surface, B xyv (L Arc (r)) represents the tangential component of the horizontal magnetic field strength of each point on the magnetic field arc line at any radius of the target surface, ∑B xyv (L Arc (r)) represents the sum of the tangential components of the horizontal magnetic field strength of each point on the magnetic field arc line at any radius of the target surface, Max(∑B xyv (L Arc (r))) represents the maximum value of the sum of the tangential components of the horizontal magnetic field strength of each point on the magnetic field arc line at each radius of the target surface, E vertical (r) represents the tangential corrosion probability at any radius of the target surface.

[0059] It should be noted that assuming that each radius is r1, r2…rm, m is an integer greater than 2, Max(∑B xyr (L Arc (r))) is the maximum value of ∑B xyr (L Arc (r1)), ∑B xyr (L Arc (r2))…∑B xyr (L Arc (rm)). xyv (L Arc (r))) is the maximum value of ∑B xyv (L Arc (r1)), ∑B xyv (L Arc (r2))…∑B xyv (L Arc (rm).

[0060] On this basis, the corrosion probability at any radius of the target surface can be obtained according to the sum of the radial corrosion probability and the tangential corrosion probability at the radius of the target surface. In some embodiments, a radial corrosion probability curve of the target surface can be obtained according to the radial corrosion probability at multiple radii of the target surface, the radial corrosion probability curve being a curve of the radial corrosion probability of the target surface varying with the radius, as shown in FIG. 9. A tangential corrosion probability curve of the target surface can be obtained according to the tangential corrosion probability at multiple radii of the target surface, the tangential corrosion probability curve being a curve of the tangential corrosion probability of the target surface varying with the radius, as shown in FIG. 10. The corrosion probability at the radius where the target is most severely corroded is 1, and the corrosion probability at the radius where the target is less severely corroded is less than 1.

[0061] As shown in FIG. 11, the curve of the corrosion probability of the target surface varying with the radius calculated by the method disclosed in the embodiments of the present application is basically similar to the curve of the actual corrosion probability of the target surface varying with the radius, thereby verifying the correctness of the corrosion probability calculation method disclosed in the embodiments of the present application. After obtaining the target corrosion probability corresponding to the initially designed magnetron, the design of the magnetron can be optimized according to the target corrosion probability to obtain a magnetron with a higher target utilization rate. That is, the forming method disclosed in the embodiments of the present application not only can reduce the design cost of the magnetron and shorten the design cycle of the magnetron, but also can improve the utilization rate of the target, and has a good engineering application prospect.

[0062] It should be noted that the embodiments of the present application only take the circular target as an example to describe the estimation process of the corrosion probability, but the present application is not limited thereto. In other embodiments, the target can also be a square or rhombus target or other shaped target, which will not be described herein.

[0063] S103: determining the pole arrangement of the magnetron according to the corrosion probability at multiple radii of the target surface.

[0064] According to the functional relationship between the horizontal magnetic field strength and the target corrosion probability, it can be known that the target corrosion probability is mainly related to the magnetic field arc length (or the number of points on the magnetic field arc) and the strength of the horizontal magnetic field. The initial design of the magnetic field distribution shape of the magnetron can be the multi-spiral shape shown in FIG. 6. This shape can include more magnetic field distribution paths, so as to increase the area of the corrosion region, and thus a magnetron with a high utilization rate can be obtained. However, the designed magnetic field distribution path cannot be too long. If the path at a certain radius is too long, the radius will be corroded first and exhausted, while the other radii are less corroded, resulting in a low utilization rate of the target. Based on this, after obtaining the corrosion probability at multiple radii of the target surface, the pole arrangement of the magnetron needs to be determined according to the utilization rate of the target.

[0065] In some embodiments of the present application, the utilization rate of the target material can be obtained according to the corrosion probabilities at the plurality of radii of the target material surface. If the corrosion probability at a radius is 1, the utilization rate of the target material is equal to or close to 100%. The utilization rate of the entire target material can be obtained according to the average of the utilization rates of the target material at the plurality of radii. If the utilization rate of the target material is less than the target utilization rate, it indicates that the magnetic pole arrangement of the magnetron does not meet the design requirements, and the magnetic pole arrangement of the magnetron needs to be adjusted. If the utilization rate of the target material is greater than or equal to the target utilization rate, it indicates that the magnetic pole arrangement of the magnetron meets the design requirements, and the magnetic pole arrangement of the magnetron can not be adjusted or can be fine-tuned. Based on this, the method disclosed by the embodiments of the present application can not only reduce the design cost of the magnetron and shorten the design cycle of the magnetron, but also ensure the uniformity of target material corrosion by adjusting the magnetic pole arrangement of the magnetron.

[0066] In some embodiments, the corrosion probability curve or the corrosion area ratio of the target material surface can be obtained according to the corrosion probabilities at the plurality of radii of the target material surface, and the utilization rate of the target material can be obtained according to the corrosion probability curve or the corrosion area ratio of the target material surface.

[0067] On this basis, in some embodiments of the present application, the method for forming the magnetron further comprises: if the utilization rate of the target material is greater than or equal to the target utilization rate, obtaining the uniformity of the thin film formed by the magnetron sputtering equipment having the magnetron, if the uniformity of the thin film is greater than or equal to the target uniformity, not adjusting the magnetic pole arrangement of the magnetron, determining the magnetic pole arrangement of the magnetron as the final arrangement result, if the uniformity of the thin film is less than the target uniformity, fine-tuning the magnetic pole arrangement of the magnetron (for example, adjusting the magnetic pole arrangement of the local area of the magnetron). If the uniformity of the thin film is still less than the target uniformity after multiple fine-tuning of the magnetic pole arrangement and process conditions (such as gas pressure, power and target-to-substrate distance), the magnetic pole arrangement of the magnetron is redesigned. Based on this, the method disclosed by the embodiments of the present application can not only reduce the design cost of the magnetron and shorten the design cycle of the magnetron, but also ensure the uniformity of target material corrosion and the uniformity of deposited thin film by adjusting the magnetic pole arrangement of the magnetron. In some embodiments, adjusting the magnetic pole arrangement of the magnetron comprises: adjusting the magnetic pole arrangement at the corresponding radius according to the maximum corrosion probability (the corrosion probability at the curve peak in FIG. 11) or the minimum corrosion probability (the corrosion probability at the curve trough in FIG. 11) in the corrosion probabilities at the plurality of radii of the target material surface. Specifically, the magnetic pole arrangement at the radius corresponding to the maximum corrosion probability can be adjusted or the magnetic pole arrangement at the radius corresponding to the minimum corrosion probability can be adjusted. And / or, at least one of the number of magnetic poles, the arrangement pattern spiral number and the spiral curvature change of the magnetron is adjusted. Of course, the present application is not limited to this, and the adjustment scheme of the magnetic pole arrangement can be determined according to the specific situation in specific application, which will not be described here.

[0068] As another embodiment of the disclosure, the embodiment of the present application also discloses a magnetron sputtering device, as shown in Figure 1, which comprises a magnetron 5 and the like, wherein the magnetron 5 can be formed by the forming method disclosed in any of the above embodiments.

[0069] The technical features of the above embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, but as long as the combinations of the technical features do not exist, they should be considered as the scope of the disclosure.

[0070] The above embodiments only express several implementation manners of the present disclosure, and the description is specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for ordinary skilled persons in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are all within the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure should be subject to the appended claims.

Claims

1. A method for forming a magnetron, characterized in that: include: According to the magnetic pole arrangement of the magnetron, the horizontal magnetic field intensity of each point on the magnetic field arc of the magnetron at any radius on the target surface is obtained; Obtaining the corrosion probability at any radius on the target surface according to the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability; The magnetic pole arrangement of the magnetron is determined according to the corrosion probability at multiple radii on the surface of the target material.

2. The forming method according to claim 1, wherein: Obtaining the corrosion probability at any radius on the target surface according to the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability includes: Obtaining the radial corrosion probability at any radius on the target surface according to the radial component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability in a static state of the magnetron; Obtaining the tangential corrosion probability at any radius on the target surface according to the tangential component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability when the magnetron is rotating; According to the radial corrosion probability and the tangential corrosion probability at any radius of the target surface, the corrosion probability at any radius of the target surface is obtained, and the corrosion probability at any radius of the target surface is equal to the sum of the radial corrosion probability and the tangential corrosion probability at the radius.

3. The forming method according to claim 2, wherein: Obtaining the radial corrosion probability at any radius on the target surface according to the radial component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability in a static state of the magnetron includes: According to the radial component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the functional relationship E radial (r)=∑B xyr (L Arc (r)) / Max(∑B xyr (L Arc (r))), obtaining the radial corrosion probability at any radius on the target surface; Wherein, r represents any radius of the target surface, B xyr (L Arc (r)) represents the radial component of the horizontal magnetic field intensity at any point on the magnetic field arc at any radius on the target surface, ∑B xyr (L Arc (r)) represents the sum of the radial components of the horizontal magnetic field strength at each point on the magnetic field arc at any radius on the target surface, Max(∑B xyr (L Arc (r))) represents the maximum value of the sum of the radial components of the horizontal magnetic field intensity at each point on the magnetic field arc at each radius on the target surface, E radial (r) represents the radial corrosion probability at any radius on the target surface.

4. The forming method according to claim 2, wherein: Obtaining the tangential corrosion probability at any radius on the target surface according to the tangential component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the relationship between the horizontal magnetic field intensity and the target corrosion probability in a rotating magnetron state includes: According to the tangential component of the horizontal magnetic field intensity at each point on the magnetic field arc at any radius on the target surface and the functional relationship Obtaining the tangential corrosion probability at any radius on the target surface; Wherein, r represents any radius of the target surface, B xyv (L Arc (r)) represents the tangential component of the horizontal magnetic field intensity at any point on the magnetic field arc at any radius on the target surface, ∑B xyv (L Arc (r)) represents the sum of the tangential components of the horizontal magnetic field strength at each point on the magnetic field arc at any radius on the target surface, Max(∑B xyv (L Arc (r))) represents the maximum value of the sum of the tangential components of the horizontal magnetic field intensity at each point on the magnetic field arc at each radius on the target surface, E vertical (r) represents the probability of tangential corrosion at any radius on the target surface.

5. The forming method according to claim 1, wherein: Determining the magnetic pole arrangement of the magnetron according to the corrosion probabilities at multiple radii on the target surface includes: Obtaining a utilization rate of the target material according to corrosion probabilities at multiple radii on the surface of the target material; If the utilization rate of the target material is less than the target utilization rate, the magnetic pole arrangement of the magnetron is adjusted.

6. The forming method according to claim 5, wherein: Obtaining the utilization rate of the target material according to the corrosion probabilities at multiple radii on the surface of the target material includes: Obtaining a corrosion probability curve or a corrosion area ratio of the target surface according to the corrosion probabilities at multiple radii on the target surface; The utilization rate of the target material is obtained according to the corrosion probability curve or the corrosion area ratio of the target material surface.

7. The forming method according to claim 5, wherein: Also includes: If the utilization rate of the target material is greater than or equal to the target utilization rate, obtaining the uniformity of a thin film formed by a magnetron sputtering device having the magnetron; If the uniformity of the film is less than the target uniformity, the magnetic pole arrangement of the magnetron is fine-tuned.

8. The forming method according to claim 5, wherein: The adjusting of the magnetic pole arrangement of the magnetron includes: adjusting the magnetic pole arrangement at the corresponding radius according to the maximum corrosion probability or the minimum corrosion probability among the corrosion probabilities at multiple radii on the target surface; and / or adjusting at least one of the number of magnetic poles of the magnetron, the number of spirals in the arrangement pattern, and the change in spiral curvature.

9. A magnetron, characterized in that: The magnetron is formed by the forming method according to any one of claims 1 to 8.

10. A magnetron sputtering device, characterized in that: Including the magnetron according to claim 9.