Solar cell, interface passivation material, photovoltaic power generation system and electric device

Abstract

Disclosed in the present application are a solar cell, an interface passivation material, a photovoltaic power generation system and an electric device. The solar cell comprises an interface passivation material, and the interface passivation material comprises a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2): (I), wherein Ar is an aromatic group, Q is a functional group containing active hydrogen, A+ is selected from an ammonium group or a phosphonium group, and X- is selected from any one of a halogen ion, a halogen-like ion, an oxygen-containing acid radical ion, a fluorine-containing borate ion and a sulfonimide anion. The interface passivation material can be used in a solar cell, thereby passivating the interface defect of a light absorption layer, improving the carrier transporting performance, and improving the photoelectric conversion efficiency and stability of the solar cell.

Description

Solar cells, interface passivation materials, photovoltaic power generation systems and electrical equipment

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application No. 202311716993.8, filed on December 13, 2023, entitled “Interface passivation materials, solar cells, photovoltaic power generation systems and electrical equipment,” and the entire contents of that application are incorporated herein by reference. Technical Field

[0003] The present application relates to the field of new energy technology, in particular to solar cells, interface passivation materials, photovoltaic power generation systems and electrical equipment. Background Art

[0004] As a key technology in the field of new energy, solar cells have expanded beyond the military and aerospace sectors into numerous fields, including industry, commerce, agriculture, communications, home appliances, and public utilities. Perovskite solar cells are one of the most promising and promising solar cells, boasting high efficiency, environmental friendliness, and low cost.

[0005] However, the photoelectric conversion efficiency of perovskite solar cells is currently far below the theoretical limit, and their stability does not meet the requirements for practical use. This is due to the high density of defects at the perovskite interface. The above statements are intended only to provide background information related to this application and do not necessarily constitute prior art. Summary of the Invention

[0006] The main technical problem solved by this application is to provide a solar cell, an interface passivation material, a photovoltaic power generation system and electrical equipment, which can passivate the interface defects of the light absorption layer, thereby improving the photoelectric conversion efficiency and stability of the solar cell.

[0007] In order to solve the above technical problems, a technical solution adopted in the present application is: providing a solar cell, the solar cell including an interface passivation material, the interface passivation material including a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2):

[0008] Among them, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X -Any one selected from the group consisting of a halogen ion, a quasi-halogen ion, an oxoacid ion, a fluoride ion, and a sulfonimide anion; L1-L5 are selected from the group consisting of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted with a halogen, a heteroatom chain having 0-10 carbon atoms containing a heteroatom, a heteroatom chain having 0-10 carbon atoms substituted with a halogen, and a single heteroatom, wherein the heteroatom comprises one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkylene chain having 0 carbon atoms indicates that the two groups connected to L1-L5 are directly connected. The above-mentioned interface passivation material can passivate defects at the interface of the perovskite layer, induce orderly stacking at the interface of adjacent carrier transport layers, block the migration of anions in the perovskite, thereby improving the carrier transport performance and enhancing the photoelectric conversion efficiency and stability of the solar cell device.

[0009] In one embodiment, Q is selected from any one of hydroxyl (-OH), carboxyl (-COOH), thiol (-SH), amino (-NR'H), and amide (-NHCOR); R' is selected from any one of hydrogen, an alkyl chain having 1-10 carbon atoms, and an alkyl chain having 1-10 carbon atoms substituted with a halogen; and R is selected from any one of hydrogen, a halogen, an alkyl chain having 1-10 carbon atoms, an alkyl chain having 1-10 carbon atoms substituted with a halogen, a heteroatom chain having 1-10 carbon atoms containing heteroatoms, and a heteroatom chain having 1-10 carbon atoms substituted with a halogen, wherein the heteroatoms include one or more of nitrogen, oxygen, and sulfur atoms. The functional group (Q) containing active hydrogen can provide active hydrogen for interaction with strongly electronegative groups of adjacent carrier transport layers, and can also induce orderly stacking at the interface of adjacent carrier transport layers, thereby improving carrier transport performance.

[0010] In one embodiment, Ar in the first compound comprises any one of the following structures Ar1-Ar15:

[0011] wherein Y1-Y18 is selected from one of an oxygen atom (—O—), a sulfur atom (—S—), and an R'-substituted nitrogen atom (—NR'-); R' is selected from any one of a hydrogen atom, an alkyl chain having 1-10 carbon atoms, and an alkyl chain having 1-10 carbon atoms substituted with a halogen; and R1-R79 is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain having 1-10 carbon atoms, an alkyl chain having 1-10 carbon atoms substituted with a halogen, a heteroatom chain having 1-10 carbon atoms containing heteroatoms, and a heteroatom chain having 1-10 carbon atoms substituted with a halogen, wherein the heteroatoms include one or more of a nitrogen atom, an oxygen atom, and a sulfur atom.

[0012] in, Represents a single bond connection site. In the case where the structure of the interface passivation material is formula (1), the structure Ar1-Ar15 is Connected to L1; and / or

[0013] In the second compound, Ar includes any one of the following structures Ar16-Ar30:

[0014] The difference between Ar16 and Ar1 is that any one of R1-R5 is Ar17 differs from Ar2 in that any one of R6-R12 is replaced Ar18 is different from Ar3 in that any one of R13-R19 is replaced by The difference between Ar19 and Ar4 is that any one of R20-R28 is replaced The difference between Ar20 and Ar5 is that any one of R29-R31 is replaced The difference between Ar21 and Ar6 is that any one of R32-R34 is replaced The difference between Ar22 and Ar7 is that any one of R35-R37 is replaced The difference between Ar23 and Ar8 is that any one of R38-R40 is replaced The difference between Ar24 and Ar9 is that any one of R41-R45 is replaced The difference between Ar25 and Ar10 is that any one of R46-R50 is replaced Ar26 differs from Ar11 in that any one of R51-R55 is replaced Ar27 differs from Ar12 in that any one of R56-R60 is replaced Ar28 and Ar13 differ in that any one of R61-R69 is replaced Ar29 differs from Ar14 in that any one of R70-R74 is replaced by The difference between Ar30 and Ar15 is that any one of R75-R79 is replaced replace.

[0015] When the structure of the interface passivation material is formula (2), the structure Ar16-Ar30 is Connect to L4 and L5 respectively.

[0016] Aromatic groups (Ar) can be enriched at the interface of the perovskite layer, blocking the migration of anions in the perovskite layer and improving the stability of perovskite solar cells; at the same time, they can induce the accumulation of organic fused ring molecules in adjacent carrier transport layers, making their arrangement more orderly, thereby improving the carrier transport performance.

[0017] In one embodiment, the ammonium group comprises -NR'3 + ; and / or phosphonium groups including -PR'3 + , R' is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, and an alkyl chain having 1 to 10 carbon atoms substituted by a halogen. Ammonium and phosphonium groups are cationic functional groups, so A + It can passivate the A-site defects in the perovskite layer interface, stabilize the lattice, and reduce the non-radiative recombination loss of carriers at the interface.

[0018] In one embodiment, the halide ion comprises F - 、Cl - Br - , I - Any one of; halogen-like ions include CN - 、OCN - 、SCN - Any one of; the oxygen-containing acid radical ions include NO3 - 、ClO3 - 、R”SO3 - 、R”COO - 、R”PO2(OH) - wherein R" is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, an alkyl chain having 1 to 10 carbon atoms substituted by a halogen, Ar1-A15, and an alkyl chain having 1 to 10 carbon atoms substituted by Ar1-Ar15; and the fluoride-containing ion includes BF4 - PF6 - Any one of; and / or sulfonimide anions include (CF3SO2)2N - The above X - Anions can effectively passivate iodine vacancy defects in the perovskite layer or coordinate with low-coordinated lead ions, reducing the non-radiative recombination losses of carriers at the interface.

[0019] In one embodiment, the interface passivation material includes any one of the following structures C1-C27:

[0020] The above-mentioned interface passivation material can passivate defects at the interface of the perovskite layer, induce orderly stacking at the interface of adjacent carrier transport layers, block the migration of anions in the perovskite, and thus improve the carrier transport performance and enhance the photoelectric conversion efficiency and stability of solar cell devices.

[0021] In one embodiment, the solar cell further comprises a substrate layer, a first electrode, a first transmission layer, a light absorbing layer, a second transmission layer, and a second electrode stacked in sequence; and an interface passivation material is distributed in one or more layers of the first transmission layer, the light absorbing layer, and the second transmission layer. This arrangement simplifies the solar cell fabrication process and improves production efficiency.

[0022] In one embodiment, the doping ratio of the interface passivation material is 0.005% to 5% based on the total mass of the doped base layer, and the doped base layer is any one of the first transmission layer, the light absorption layer, and the second transmission layer. The passivation effect is achieved without affecting carrier transport.

[0023] In one embodiment, the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, or the first transport layer is a hole transport layer and the second transport layer is an electron transport layer. This means that the solar cell can have either a regular or a transverse structure, expanding the types of solar cells in which the interface passivation material can be applied.

[0024] In one embodiment, a solar cell includes a substrate layer, a first electrode, a first transmission layer, a light absorbing layer, a second transmission layer, and a second electrode stacked in sequence. The solar cell also includes a passivation layer, wherein an interface passivation material is distributed in the passivation layer. The passivation layer is located between the first transmission layer and the light absorbing layer, and / or the passivation layer is located between the second transmission layer and the light absorbing layer. The passivation layer can passivate defects at the perovskite interface and improve carrier transport performance.

[0025] In one embodiment, the thickness of the passivation layer is 0.1-10 nm. Within this thickness range, the passivation effect can be achieved without affecting carrier transport.

[0026] In one embodiment, a first electrode, a first transport layer, a light absorbing layer, a second transport layer, and a second electrode are arranged in order from bottom to top, starting from the light incident surface of the substrate layer. The first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the light absorbing layer comprises a perovskite material, and a passivation layer is located between the electron transport layer and the perovskite layer. This solar cell has improved carrier transport performance, and enhanced energy conversion efficiency and stability.

[0027] In one embodiment, the material of the first electrode includes any one of fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; and / or the light absorption layer includes a perovskite material, and the perovskite material includes any one of ABX3 and A2CDX6, wherein A is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a methylammonium ion, an n-butylammonium ion, and a cesium ion; B is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a lead ion and a tin ion; C is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from a silver ion; D is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a bismuth cation, an antimony cation, and an indium cation; X is any one of an inorganic anion, an organic anion, and an organic-inorganic mixed anion, and can be selected from at least one of a bromide ion or an iodide ion; and / or the material of the electron transport layer includes [6,6]-phenyl C 61 Methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 Methyl butyrate (PC 71 BM), fullerene C 60 (C 60 ), Fullerene C 70 (C 70 ), tin dioxide (SnO2), zinc oxide (ZnO), perylene diimide (PDI) materials, naphthalene diimide (NDI) materials and their derivatives and at least one of the materials obtained by doping or passivation thereof; and / or the material of the hole transport layer includes one or more of metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials and their derivatives and the materials obtained by doping or passivation thereof; nickel oxide (NiO x2 , 1.5≥x2≥1), molybdenum oxide (MoO x3 , 3≥x3≥2.5), tungsten oxide (WO x3 ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups; and / or the electrode material of the second electrode includes one or more of an organic conductive material, an inorganic conductive material, and an organic-inorganic hybrid conductive material; and can be one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide. The energy conversion efficiency and stability of the solar cell are improved.

[0028] In one embodiment, the first electrode has a thickness of 10-1000 nm; and / or the perovskite layer has a band gap of 1.20-2.30 eV and a thickness of 200-1000 nm; and / or the electron transport layer has a thickness of 5-100 nm; and / or the hole transport layer has a thickness of 0.5-50 nm; and / or the second electrode has a thickness of 10-1000 nm. The energy conversion efficiency and stability of the solar cell are improved.

[0029] In one embodiment, the solar cell further comprises a blocking layer, which is located between the electron transport layer and the first electrode layer or the second electrode layer; the material of the blocking layer comprises one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, tin dioxide, zinc oxide, and cerium oxide, wherein the chemical formula of cerium oxide is CeO x1 , and 1.5≤x1≤2, and the thickness of the barrier layer is 0.5-200nm. The barrier layer is used to block the reaction between the first electrode or the second electrode and the perovskite, and also has an energy level regulation function, which can reduce the energy and charge loss caused by interfacial charge recombination, thereby improving the energy conversion efficiency of the device.

[0030] In order to solve the above technical problems, another technical solution adopted in the present application is: providing an interface passivation material, the interface passivation material comprising a first compound of formula (1) and / or a second compound of formula (2):

[0031] Among them, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X - any one selected from the group consisting of halogen ions, quasi-halogen ions, oxoacid ions, fluoride ions, and sulfonimide anions; L1-L5 are selected from the group consisting of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted by a halogen, a heteroatom chain having 0-10 carbon atoms containing heteroatoms, a heteroatom chain having 0-10 carbon atoms substituted by a halogen, and a single heteroatom, wherein the heteroatom includes one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkylene chain having 0 carbon atoms indicates that the two groups respectively connected to L1-L5 are directly connected.

[0032] The above-mentioned interface passivation material can passivate defects at the interface of the perovskite layer, induce orderly stacking at the interface of adjacent carrier transport layers, block the migration of anions in the perovskite, and thus improve the carrier transport performance and enhance the photoelectric conversion efficiency and stability of solar cell devices.

[0033] To solve the above technical problems, another technical solution adopted by the present application is to provide a photovoltaic power generation system, comprising any of the above solar cells. The photovoltaic power generation system has at least the same advantages as the solar cell.

[0034] To solve the above technical problems, another technical solution adopted by the present application is to provide an electrical device comprising any of the above solar cells. The electrical device has at least the same advantages as the solar cell.

[0035] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0037] FIG1 is a schematic structural diagram of a solar cell according to one or more embodiments;

[0038] FIG. 2 is a schematic structural diagram of a solar cell according to one or more embodiments.

[0039] In the drawings: 100, battery; 11, first electrode; 13, second electrode; 21, first transmission layer; 23, second transmission layer; 30, light absorption layer; 40, passivation layer. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solution and effect of this application clearer and more specific, the following embodiments of the technical solution of this application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of this application and are therefore only examples and are not intended to limit the scope of protection of this application.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0042] In the description of the embodiments of the present application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two), similarly, "multiple groups" refers to more than two (including two), and "multiple pieces" refers to more than two (including two), unless otherwise clearly and specifically defined.

[0043] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0044] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0045] Amounts, ratios, and other numerical values ​​are presented herein in a range format. It should be understood that such range format is used for convenience and brevity and should be interpreted flexibly to include not only the values ​​explicitly specified as range limits, but also all individual values ​​or sub-ranges encompassed within the range, as if each value and sub-range were explicitly specified.

[0046] If not otherwise specified, all steps of the present application may be performed sequentially, randomly, or in parallel, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially, or may include steps (a) and (b) performed simultaneously in parallel. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b), etc.

[0047] As a key technology in the field of new energy, solar cells have expanded from military and aerospace applications into numerous fields, including industry, commerce, agriculture, communications, household appliances, and public utilities. Perovskite solar cells (PSCs) are one of the most promising solar cells, boasting high efficiency, environmental friendliness, and low cost.

[0048] Please refer to Figure 1, which is a schematic diagram of the structure of a solar cell according to one or more embodiments. Solar cell 100 includes a substrate layer (not shown), a first electrode 11, a first transport layer 21, a light absorbing layer 30, a second transport layer 23, and a second electrode 13, which are stacked in sequence. The first transport layer 21 and the second transport layer 23 are each one of an electron transport layer and a hole transport layer.

[0049] In some embodiments, the solar cell has a trans structure, the first transport layer is a hole transport layer, and the second transport layer is an electron transport layer.

[0050] In some embodiments, the solar cell has a formal structure, the first transport layer is an electron transport layer, and the second transport layer is a hole transport layer.

[0051] The base layer is a transparent base layer. The base layer may be made of glass and / or a polymer. Optionally, the polymer may include one or more of polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS). In some embodiments, the base layer may not be provided.

[0052] The first electrode is a transparent conductive substrate with high conductivity and high visible light transmittance, which functions to collect charge. In some embodiments, the first electrode is made of a transparent conductive oxide material, including any one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO). The thickness of the first electrode is 10-1000 nm.

[0053] The light absorbing layer is used to absorb light and directly convert light energy into electrical energy through the photoelectric effect or the photochemical effect.

[0054] The light absorption layer includes light-absorbing materials with photoelectric conversion function. The light-absorbing materials absorb photons of sunlight to generate excitation, and excite electrons in the valence band to produce photogenerated electron-hole pairs. The binding energy of electron-hole pairs is small, and they are easily dissociated under the action of the built-in electric field, and then separated into free electrons and free holes, that is, carriers.

[0055] In some embodiments, the material of the light absorbing layer includes but is not limited to perovskite. The chemical composition of perovskite includes any one of ABX3 or A2CDX6, wherein A is any one of an inorganic cation, an organic cation, or an organic-inorganic mixed cation, and can be a methylammonium ion (CH3NH3 + , MA + ), n-butylammonium ion (HC(NH2)2 + , FA + ), cesium ions (Cs + ) at least one of; B is an inorganic cation, an organic cation, or any one of an organic-inorganic mixed cation, which may be a lead ion (Pb 2+ ), tin ions (Sn 2+ ) at least one; C is any one of an inorganic cation, an organic cation, or an organic-inorganic mixed cation, and may be a silver ion (Ag + ); D any one of inorganic cations, organic cations, organic-inorganic mixed cations, which may be bismuth cations (Bi 3+ ), antimony cation (Sb 3+ ), indium cations (In 3+ ) at least one; X is an inorganic anion, an organic anion, an organic-inorganic mixed anion, any one of which can be a bromide ion (Br - ) or iodide ion (I - The perovskite layer has a band gap of 1.20-2.30 eV and a thickness of 200-1000 nm.

[0056] The function of the electron transport layer is to efficiently transport the free electrons generated by the perovskite layer, effectively block the passage of free holes, and form an ohmic contact at the interface with the perovskite active layer.

[0057] In some embodiments, the material of the electron transport layer is at least one of the following materials and their derivatives and materials obtained by doping or passivation, and the electron transport material includes but is not limited to at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, and fluorides. Imides include at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Fullerenes and their derivatives include [6,6]-phenyl C 61 Methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 -Methyl butyrate (PC 71 BM), fullerene C 60 (C60 ), Fullerene C 70 (C 70 ). The metal element in the metal oxide includes at least one of magnesium (Mg), cadmium (Cd), zinc (Zn), indium (In), lead (Pb), tungsten (W), antimony (Sb), bismuth (Bi), mercury (Hg), titanium (Ti), silver (Ag), manganese (Mn), iron (Fe), vanadium (V), tin (Sn), zirconium (Zr), strontium (Sr), gallium (Ga), and chromium (Cr). The semiconductor material oxide includes silicon oxide. The titanate includes at least one of strontium titanate and calcium titanate. The fluoride includes at least one of lithium fluoride and calcium fluoride. The thickness of the electron transport layer is 5-100 nm.

[0058] The hole transport layer is used to transport free holes to the corresponding electrode and prevent the free holes from diffusing in the opposite direction.

[0059] In some embodiments, the hole transport layer material includes one or more of metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials and their derivatives and materials obtained by doping or passivation thereof. For example, but not limited to metal oxide materials, such as nickel oxide (NiO x2 , 1.5≥x2≥1), molybdenum oxide (MoO x3 , 3≥x3≥2.5), tungsten oxide (WO x4 , 3 ≥ x 4 ≥ 2.5); polymer materials such as poly (bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA) and poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonic acid) (PEDOT:PSS); and organic small molecule self-assembled molecular materials such as carbazole or triphenylamine containing phosphoric acid or carboxylic acid groups. The thickness of the hole transport layer is 0.5-50 nm.

[0060] The second electrode has the function of collecting free charges. In some embodiments, the electrode material of the second electrode includes one or more of an organic conductive material, an inorganic conductive material, or an organic-inorganic hybrid conductive material, including silver (Ag), copper (Cu), carbon (C), gold (Au), aluminum (Al), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium-doped zinc oxide (IZO), etc. The thickness of the second electrode is 10-1000 nm.

[0061] In one embodiment, the solar cell provided by the present application further includes a blocking layer, which is located between the electron transport layer and the first electrode layer, or between the electron transport layer and the second electrode layer. The blocking layer is used to block the reaction between the first electrode or the second electrode and the perovskite, improve the reduction in device efficiency caused by the Schottky contact between the electron transport layer and the electrode, and has an energy level regulation effect. The valence band energy level of the blocking layer is low, much lower than the valence band energy level of the perovskite layer, and can effectively prevent the injection of holes. Therefore, the energy and charge loss caused by interfacial charge recombination can be reduced, thereby improving the energy conversion efficiency of the device.

[0062] Furthermore, the barrier layer material includes 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), tin dioxide (SnO2), zinc oxide (ZnO), cerium oxide (CeO x1 , 1.5≤x1≤2) and the thickness of the barrier layer is 0.5-20nm.

[0063] Currently, the highest efficiency achieved by single-junction perovskite solar cells remains far below the theoretically calculated Sockley-Queisser efficiency limit of 30.5%, leaving considerable room for improvement. Furthermore, the stability of perovskite solar cells in various environmental conditions still falls short of commercial standards. The photoelectric conversion efficiency and stability of perovskite solar cells are closely related to the nonradiative recombination (NRR) process of carriers within the device and at interfaces. Reducing NRR losses can effectively improve both efficiency and stability. In-depth research has shown that NRR in perovskite solar cells is primarily due to the presence of various types of defects at the perovskite interface, primarily shallow-level defects and deep-level defects. Deep-level defects can capture electrons or holes, causing them to be annihilated by oppositely charged carriers, leading to charge carrier loss within the perovskite material. Shallow-level defects can migrate to the interface under the action of an electric field, affecting the photovoltaic performance of perovskite solar cells.

[0064] The study found that by introducing suitable materials at the perovskite interface for surface passivation and repairing defects at the interface, the photoelectric conversion efficiency and stability of perovskite solar cells can be effectively improved.

[0065] Based on this, the present application provides a solar cell, an interface passivation material, a photovoltaic power generation system and an electrical device to improve the interface defects of perovskite, realize interface passivation, reduce the non-radiative recombination loss caused by carrier recombination at the interface, improve the carrier transport performance, and improve the photoelectric conversion efficiency of solar cells.

[0066] According to some embodiments of the present application, a solar cell includes an interface passivation material, and the interface passivation material includes a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2);

[0067] Among them, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X - any one selected from the group consisting of halogen ions, quasi-halogen ions, oxoacid ions, fluoride ions, and sulfonimide anions; L1-L5 are selected from the group consisting of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted by a halogen, a heteroatom chain having 0-10 carbon atoms containing heteroatoms, a heteroatom chain having 0-10 carbon atoms substituted by a halogen, and a single heteroatom, wherein the heteroatom includes one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkylene chain having 0 carbon atoms indicates that the two groups respectively connected to L1-L5 are directly connected.

[0068] Here, a heteroatom chain containing 0-10 carbon atoms and containing heteroatoms refers to an alkylene chain containing 0-10 carbon atoms, where some of the carbon atoms in the alkylene chain are replaced with heteroatoms, making the alkylene chain a heteroatom chain, and the total number of heteroatoms and carbon atoms is 0-10. When the number is 0, it means that the two groups connected to L1-L5 are directly connected; when the number is 1, it means that L1-L5 is a single heteroatom; when the number is 2-10, it means that L1-L5 includes heteroatoms and carbon atoms.

[0069] The above-mentioned interface passivation material can firstly passivate defects at the interface of the perovskite layer, reducing non-radiative recombination losses of carriers at the interface; secondly, it can induce orderly stacking at the interface of adjacent carrier transport layers, improving carrier transport performance; and thirdly, it can block the migration of anions in the perovskite, improving defects caused by ion migration in solar cells. Therefore, this interface passivation material can improve the photoelectric conversion efficiency and stability of solar cell devices.

[0070] In one embodiment, Q in the above-mentioned interface passivation material is selected from any one of a hydroxyl group (-OH), a carboxyl group (-COOH), a thiol group (-SH), an amino group (-NR'H), and an amide group (-NHCOR); R' is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, and an alkyl chain having 1 to 10 carbon atoms substituted by a halogen; R is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain having 1 to 10 carbon atoms, an alkyl chain having 1 to 10 carbon atoms substituted by a halogen, a heteroatom chain having 1 to 10 carbon atoms containing heteroatoms, and a heteroatom chain having 1 to 10 carbon atoms substituted by a halogen, and the heteroatoms include one or more of nitrogen atoms, oxygen atoms, and sulfur atoms.

[0071] Q is a functional group containing active hydrogen. Active hydrogen refers to hydrogen atoms that are easy to break away from atoms, form free radical reactions, or participate in other chemical reactions. The hydrogen atom in the hydroxyl group (-OH) can easily break away from the hydroxyl group through proton transfer to form a free hydrogen ion (H + ), in addition, the oxygen atom in the hydroxyl group has high electronegativity and strong electrophilicity, which will also promote the separation of hydrogen ions; the hydroxyl hydrogen in the carboxyl group (-COOH) is more easily dissociated than the alcoholic hydroxyl hydrogen, showing weak acidity; the sulfur atom in the thiol group (-SH) also has a high electronegativity, which can promote the separation of hydrogen ions; the nitrogen atom in the amino group (-NR'H) also has a high electronegativity, which can promote the separation of hydrogen ions; in the amide group (-NHCOR), the π electrons in the carbonyl group and the p orbital occupied by the lone electron pair on the nitrogen atom form a p-π conjugation, resulting in a decrease in the electron cloud density on the nitrogen atom, and also an increase in the polarity of the NH bond, making the hydrogen atom active.

[0072] Functional groups (Q) containing active hydrogen can provide active hydrogen to interact with strongly electronegative groups in adjacent carrier transport layers, such as oxygen atoms (-O-) and fluorine atoms (-F-) containing lone pairs of electrons, to form hydrogen bonds or other strong interactions. At the same time, they can also induce orderly stacking at the interface of adjacent carrier transport layers, thereby improving the carrier transport performance and the performance of solar cell devices.

[0073] In one embodiment, in the above-mentioned interface passivation material, Ar in the first compound includes any one of the following structures Ar1-Ar15:

[0074] wherein Y1-Y18 is selected from one of an oxygen atom (—O—), a sulfur atom (—S—), and an R'-substituted nitrogen atom (—NR'-); R' is selected from any one of a hydrogen atom, an alkyl chain having 1-10 carbon atoms, and an alkyl chain having 1-10 carbon atoms substituted with a halogen; and R1-R79 is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain having 1-10 carbon atoms, an alkyl chain having 1-10 carbon atoms substituted with a halogen, a heteroatom chain having 1-10 carbon atoms containing heteroatoms, and a heteroatom chain having 1-10 carbon atoms substituted with a halogen, wherein the heteroatoms include one or more of a nitrogen atom, an oxygen atom, and a sulfur atom.

[0075] in, Represents a single bond connection site. When the structure of the interfacial passivation material is When the structure Ar1-Ar15 is connected to said L1; and / or

[0076] In the second compound, Ar includes any one of the following structures Ar16-Ar30,

[0077] The difference between Ar16 and Ar1 is that any one of R1-R5 is Ar17 differs from Ar2 in that any one of R6-R12 is replaced Ar18 is different from Ar3 in that any one of R13-R19 is replaced by The difference between Ar19 and Ar4 is that any one of R20-R28 is replaced The difference between Ar20 and Ar5 is that any one of R29-R31 is replaced The difference between Ar21 and Ar6 is that any one of R32-R34 is replaced The difference between Ar22 and Ar7 is that any one of R35-R37 is replaced The difference between Ar23 and Ar8 is that any one of R38-R40 is replaced The difference between Ar24 and Ar9 is that any one of R41-R45 is replaced The difference between Ar25 and Ar10 is that any one of R46-R50 is replaced Ar26 differs from Ar11 in that any one of R51-R55 is replaced Ar27 differs from Ar12 in that any one of R56-R60 is replaced Ar28 and Ar13 differ in that any one of R61-R69 is replaced Ar29 differs from Ar14 in that any one of R70-R74 is replaced by The difference between Ar30 and Ar15 is that any one of R75-R79 is replaced replace.

[0078] When the structure of the interface passivation material is When the structure Ar16-Ar30 is Connect to L4 and L5 respectively.

[0079] Y1-Y18 may be the same group or different groups; R1-R79 may be the same group or different groups.

[0080] Aromatic groups (Ar) can be enriched at the interface of the perovskite layer, blocking the migration of anions in the perovskite layer and improving the stability of perovskite solar cells. At the same time, they can induce the accumulation of organic fused ring molecules in adjacent carrier transport layers through π-π interactions, making their arrangement more orderly, thereby improving the carrier transport performance and improving the performance of solar cell devices.

[0081] In one embodiment, in the above-mentioned interface passivation material, A + Selected from ammonium or phosphonium, ammonium includes -NR' 3+ ; Phosphonium groups include -PR' 3+ , R' is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, and a halogen-substituted alkyl chain having 1 to 10 carbon atoms.

[0082] Ammonium and phosphonium groups are cationic functional groups, so A + It can passivate the A-site defects in the ABX3 or A2CDX6 interface of the perovskite layer, stabilize the lattice, reduce the non-radiative recombination loss of carriers at the interface, and improve the performance of solar cell devices.

[0083] In one embodiment, in the above-mentioned interface passivation material, X - Any one selected from the group consisting of halogen ions, quasi-halogen ions, oxygen-containing acid radical ions, fluoride-containing acid ions, and sulfonimide anions, wherein the halogen ions include fluoride ions (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ) in any one; halogen-like ions include cyanide ions (CN - ), cyanate ion (OCN - ), thiocyanate ion (SCN - ) any one of; fluoride-containing ions include tetrafluoroborate ions (BF4 -), hexafluorophosphate ion (PF6 - ) any one; sulfonimide anion includes bis(trifluoromethylsulfonyl)imide anion [(CF3SO2)2N - ]. Oxygen-containing acid ions include NO3 - 、ClO3 - 、R”SO3 - 、R”COO - 、R”PO2(OH) - wherein R" is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, an alkyl chain having 1 to 10 carbon atoms substituted by a halogen, Ar1-A15, and an alkyl chain having 1 to 10 carbon atoms substituted by Ar1-Ar15. Specifically, the oxoacid ion includes any one of p-toluenesulfonate ion, trifluoromethanesulfonate ion, fluorosulfonate ion, and methylphosphate ion.

[0084] X - Anions can effectively passivate iodine vacancy defects in the perovskite layer or coordinate with low-coordinated lead ions to reduce the non-radiative recombination loss of carriers at the interface. - Can improve the crystallization and morphology of the perovskite layer and can improve the photoelectric performance (carrier lifetime and expansion length, etc.); I - It can fill the halide vacancies at the grain boundaries of the perovskite layer, thereby passivating the defects and reducing the non-radiative recombination of carriers; SCN - Can passivate cation defects and grain boundaries, and Pb 2+ It forms a crystal structure that is more stable and stronger than halide groups, while also enhancing water resistance, light absorption, and reducing leakage current.

[0085] In one embodiment, the interface passivation material includes any one of the following structures C1-C27:

[0086] In one embodiment, the interface passivation material may be distributed in one or more layers of the first transmission layer, the light absorbing layer, and the second transmission layer.

[0087] The interfacial passivation material is distributed in one or more layers of the first transmission layer, the light absorption layer, and the second transmission layer, which means that the interfacial passivation material is uniformly mixed with the materials in the above layers to prepare the thin film. This can simplify the preparation process of solar cells and improve production efficiency.

[0088] The doping ratio of the interface passivation material is 0.005%-5% based on the total mass of the doped base layer, for example, 0.005%, 0.01%, 0.05%, 0.1%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 3%, 4%, or 5%. The doped base layer can be any of the first transmission layer, the light absorption layer, or the second transmission layer. In other words, the doping amount is calculated based on the layer into which the passivation material is doped. For example, when the passivation material is doped into the first transmission layer, the weight ratio of the doping material is 0.5%-1% of the total mass of the first transmission layer.

[0089] In one embodiment, the interface passivation material can also become a separate passivation layer. Specifically, the solar cell also includes a passivation layer, the interface passivation material is distributed in the passivation layer, the passivation layer is located between the first transmission layer and the light absorption layer, and / or the passivation layer is located between the second transmission layer and the light absorption layer.

[0090] The passivation layer can be formed at the interface between the hole transport layer and the light absorption layer, or at the interface between the electron transport layer and the light absorption layer. The passivation layer can passivate the defects of the perovskite interface, thereby reducing the non-radiative recombination losses of carriers at the interface and improving the carrier transport performance.

[0091] The passivation layer can be prepared by methods such as blade coating, spin coating, spray coating, slit coating, and chemical vapor deposition.

[0092] The thickness of the passivation layer is 0.1-10 nm. Increasing the thickness of the passivation layer can enhance the passivation effect, but due to the low conductivity of the interfacial passivation material, a passivation layer that is too thick can limit current transmission. Therefore, a passivation layer thickness within the range of 0.1-10 nm can achieve the passivation effect without affecting current transmission, thereby reducing non-radiative carrier recombination losses.

[0093] Please refer to Figure 2, which is a schematic diagram of the structure of a solar cell according to one or more embodiments. In one embodiment, taking an inverted perovskite solar cell as an example, the first electrode 11, the first transport layer 21, the light absorbing layer 30, the second transport layer 23, and the second electrode 13 of the solar cell 100 are arranged in order from bottom to top from the substrate layer, the first transport layer 21 is a hole transport layer, the second transport layer 23 is an electron transport layer, the light absorbing layer 30 is a perovskite layer, and the passivation layer 40 is located between the electron transport layer and the perovskite layer, and / or the passivation layer 40 is located between the perovskite layer and the hole transport layer.

[0094] The preparation of inverted perovskite solar cells includes the following steps:

[0095] S1: etching and cleaning the first electrode substrate, and drying for later use;

[0096] S2: preparing a hole transport layer on a clean first electrode substrate for later use;

[0097] S3: preparing a perovskite light absorption layer on the hole transport layer for later use;

[0098] S4: preparing an electron transport layer and a blocking layer on the perovskite light absorption layer for later use;

[0099] S5: Prepare a second electrode layer on the barrier layer and perform edge cleaning test.

[0100] In one embodiment, the interface passivation material is doped into one or more layers of the hole transport layer, the perovskite layer, and the electron transport layer by mixing the interface passivation material with the precursor solution of each layer.

[0101] In one embodiment, the interface passivation material is formed as a separate layer and deposited at the interface between the hole transport layer and the perovskite layer; and / or at the interface between the perovskite layer and the electron transport layer. Preparation methods include, but are not limited to, blade coating, spin coating, spray coating, slit coating, and chemical vapor deposition.

[0102] According to some embodiments of the present application, the present application further provides an interface passivation material, which includes a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2):

[0103] Among them, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + is selected from an ammonium group or a phosphonium group; X - any one selected from the group consisting of halogen ions, quasi-halogen ions, oxoacid ions, fluoride ions, and sulfonimide anions; L1-L5 are selected from the group consisting of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted by a halogen, a heteroatom chain having 0-10 carbon atoms containing heteroatoms, a heteroatom chain having 0-10 carbon atoms substituted by a halogen, and a single heteroatom, wherein the heteroatom includes one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein an alkylene chain having 0 carbon atoms indicates that the two groups respectively connected to L1-L5 are directly connected.

[0104] The above-mentioned interface passivation material can passivate defects at the interface of the perovskite layer, induce orderly stacking at the interface of adjacent carrier transport layers, block the migration of anions in the perovskite, and thus improve the carrier transport performance and enhance the photoelectric conversion efficiency and stability of solar cell devices.

[0105] According to some embodiments of the present application, the present application also provides a photovoltaic power generation system, which includes any of the above-mentioned solar cells.

[0106] Photovoltaic power generation system refers to a power generation system that uses the photovoltaic effect to directly convert solar radiation energy into electrical energy. It is divided into a stand-alone photovoltaic power generation system (Stand-alone PV System) and a grid-connected photovoltaic power generation system (Grid-connected PV System). The stand-alone photovoltaic power generation system consists of a solar photovoltaic array composed of photovoltaic modules, a battery pack, a charge controller, a power electronic converter (inverter), and a load. The grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitoring system.

[0107] The photovoltaic power generation system includes a plurality of electrically connected photovoltaic modules, where a plurality refers to an integer number of two or more.

[0108] According to some embodiments of the present application, the present application further provides an electrical device, which includes the solar cell provided by the above solution, and the solar cell is used to provide electrical energy to the electrical device.

[0109] The electrical equipment includes common equipment that includes the solar cells of the present application, such as those used in the fields of communications, transportation, industry, agriculture, and lighting. Examples of electrical equipment include satellites, communications equipment, traffic lights, lighthouses, wireless phone booths, drilling monitoring equipment, power systems, camping lanterns, electric vehicles, and electronic device chargers.

[0110] The electrical equipment can be powered solely by solar cells, or by a combination of solar cells and energy storage batteries, i.e., the electrical equipment is equipped with both solar cells and energy storage batteries. Energy storage batteries are not limited to primary batteries or secondary batteries, and include, but are not limited to, lithium-ion secondary batteries and sodium-ion secondary batteries.

[0111] The beneficial effects of the present application are further illustrated below with reference to the examples.

[0112] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail with reference to the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0113] 1. Preparation of interface passivation materials

[0114] (1) Synthesis of C1:

[0115] 2-Amino-3-phenylpropanol (10 mmol) was dissolved in ethanol (50 mL) and the solution was cooled to 0°C. An aqueous solution of hydrochloric acid (36% by mass, 2.5 mL) was added dropwise to the solution and stirred for 3 h. After removing the solvent, the compound was recrystallized from ether to obtain compound C1 with a yield of about 67%. The H NMR spectrum ( 1 H NMR) results are: chemical shift δ = 8.34 (s, 3H); δ = 7.22-7.18 (m, 5H); δ = 4.26-4.18 (m, 3H); δ = 3.98-3.94 (m, 1H); δ = 3.33-3.26 (m, 2H). Where s represents a singlet and m represents a multiplet.

[0116] (2) Synthesis of C2:

[0117] 2-Amino-1-phenylethanol (10 mmol) was dissolved in ethanol (50 mL) and the solution was cooled to 0°C. An aqueous solution of hydroiodic acid (55%-57% by mass, 1.5 mL) was added dropwise to the solution and stirred for 5 h. After removing the solvent, the compound was recrystallized from ether to obtain compound C2 with a yield of about 54%. The H NMR spectrum ( 1 H NMR), the test results are: chemical shift δ = 8.31 (s, 3H); δ = 7.32-7.25 (m, 5H); δ = 5.53-5.48 (m, 1H); δ = 5.23 (s, 1H); δ = 3.86-3.84 (m, 2H).

[0118] (3) Synthesis of C3:

[0119] 2-Amino-3-phenylpropanol (10 mmol) was dissolved in ethanol (50 mL) and the solution was cooled to 0°C. Glacial acetic acid (10 mmol) was added dropwise to the solution and stirred for 5 h. After removing the solvent, the solution was recrystallized from ether to obtain compound C3 with a yield of about 91%. The H NMR spectrum ( 1 H NMR), the test results are: chemical shift δ = 8.33 (s, 3H); δ = 7.23-7.19 (m, 5H); δ = 4.25-4.16 (m, 3H); δ = 3.97-3.93 (m, 1H); δ = 3.34-3.25 (m, 2H); 2.21 (s, 3H).

[0120] (4) Synthesis of C4: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-dimethylamino-3-phenylpropionic acid. After reaction and purification, compound C4 is obtained with a yield of about 51%. 1 H NMR (400MHz, DMSO-d6) δ = 12.72 (s, 1H); δ = 8.10 (s, 1H); δ = 7.22-7.18 (m, 5H); δ = 4.83-4.78 (m, 1H); δ = 3.37-3.31 (m, 2H); δ = 2.86 (s, 6H).

[0121] (5) Synthesis of C5: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-amino-3-(4-fluorophenyl)propanol. After reaction and purification, compound C5 is obtained with a yield of about 35%. 1 H NMR (400MHz, DMSO-d6) δ = 8.31 (s, 3H); δ = 7.17-7.15 (m, 4H); δ = 4.33-4.28 (m, 2H); δ = 4.24 (s, 1H); δ = 3.99-3.95 (m, 1H); δ = 3.27-3.21 (m, 2H).

[0122] (6) Synthesis of C6: 2-amino-3-(4-fluorophenyl)propanol (10 mmol) and anhydrous potassium carbonate (30 mmol) were dissolved in 20 mL of N,N-dimethylformamide, iodomethane (35 mmol) was added dropwise, and the mixture was stirred at 70°C for 12 h. The supernatant was filtered and poured into 200 mL of ether. Compound C6 was obtained by filtration with a yield of about 75%. 1 H NMR (400MHz, DMSO-d6) δ = 7.19-7.15 (m, 4H); δ = 4.25 (s, 1H); δ = 4.04-3.96 (m, 3H); δ = 3.30 (s, 9H); δ = 3.07-3.01 (m, 2H).

[0123] (7) Synthesis of C7: The synthesis route is the same as that of C5, except that the aqueous solution of hydroiodic acid (55%-57% by mass, 1.5 mL) is replaced by an aqueous solution of fluoroboric acid (50% by mass, 2 mL). After reaction and purification, compound C7 is obtained with a yield of about 28%. 1 H NMR (400MHz, DMSO-d6) δ = 8.31 (s, 3H); δ = 7.17-7.15 (m, 4H); δ = 4.34-4.28 (m, 2H); δ = 4.23 (s, 1H); δ = 3.98-3.95 (m, 1H); δ = 3.26-3.21 (m, 2H).

[0124] (8) Synthesis of C8: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-amino-3-(3-trifluoromethylphenyl)propionic acid. After reaction and purification, compound C8 is obtained with a yield of about 55%. 1 H NMR (400MHz, DMSO-d6) δ = 12.72 (s, 1H); δ = 8.31 (s, 3H); δ = 7.47-7.42 (m, 3H); δ = 7.21 (s, 1H); δ = 4.83-4.78 (m, 1H); δ = 3.67-3.61 (m, 2H).

[0125] (9) Synthesis of C9: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C9 is obtained with a yield of about 33%. 1 H NMR (400MHz, DMSO-d6) δ = 8.30 (s, 1H); δ = 7.53 (s, 1H); δ = 7.06-7.01 (m, 2H); δ = 5.18 (s ,1H); δ=4.79-4.77(m,1H); δ=3.24-3.20(m,2H); δ=2.86(s,6H); δ=2.14-2.10(m,2H).

[0126] (10) Synthesis of C10: The synthesis route is the same as that of C2, except that 2-amino-3-(4-fluorophenyl)propanol is replaced by (S)-3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C10 is obtained with a yield of about 31%. 1 H NMR (400MHz, DMSO-d6) δ = 8.30 (s, 1H); δ = 7.53 (s, 1H); δ = 7.06-7.01 (m, 2H); δ = 5.20 (s ,1H); δ=4.79-4.77(m,1H); δ=3.25-3.21(m,2H); δ=2.86(s,6H); δ=2.14-2.10(m,2H).

[0127] (11) Synthesis of C11: The synthesis route is the same as that of C6, except that 2-amino-1-phenylethanol is replaced by (S)-3-(dimethylamino)-1-(2-thienyl)-1-propanol, the amount of potassium carbonate is reduced to 5 mmol, and the amount of iodomethane is reduced to 12 mmol. After reaction and purification, compound C11 is obtained with a yield of about 71%. 1H NMR (400MHz, DMSO-d6) δ = 7.53 (s, 1H); δ = 7.06-7.01 (m, 2H); δ = 5.32 (s, 1H); δ = 4.79-4.77(m,1H); δ=3.24-3.20(m,2H); δ=3.30(s,9H); δ=2.14-2.10(m,2H).

[0128] (12) Synthesis of C12: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 3-(dimethylamino)-1-(2-thienyl)-1-propanol. After reaction and purification, compound C12 is obtained with a yield of about 43%. 1 H NMR (400MHz, DMSO-d6) δ = 8.30 (s, 2H); δ = 7.53 (s, 1H); δ = 7.06-7.01 (m, 2H); δ = 4.79-4.77(m,1H); δ=3.24-3.20(m,2H); δ=2.86(s,3H); δ=2.14-2.10(m,2H).

[0129] (13) Synthesis of C13: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 4-amino-3-(5-chloro-2-thienyl)butyric acid. After reaction and purification, compound C13 is obtained with a yield of about 61%. 1 H NMR (400MHz, DMSO-d6) δ = 12.51 (s, 1H); δ = 8.30 (s, 3H); δ = 6.67-6.65 (m, 2H); δ = 3.73-3.58 (m, 3H); δ = 2.61-2.57 (m, 2H).

[0130] (14) Synthesis of C14: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 2-amino-3-(2-thienyl)propionic acid. After reaction and purification, compound C14 is obtained with a yield of about 58%. 1 H NMR (400MHz, DMSO-d6) δ = 12.72 (s, 1H); δ = 8.32 (s, 3H); δ = 7.22 (d, J = 7.2Hz, 1H); δ = 6.92-6.90 (m, 2H); δ = 4.85-4.82 (m, 1H); δ = 3.97-3.91 (m, 2H).

[0131] (15) Synthesis of C15: The synthesis route is the same as that of C1, except that 2-amino-3-phenylpropanol is replaced by (R)-3-amino-4-(2-thienyl)butyric acid. After reaction and purification, compound C15 is obtained with a yield of about 63%. 1H NMR (400MHz, DMSO-d6) δ = 12.03 (s, 1H); δ = 8.37 (s, 3H); δ = 7.38 (d, J = 7.2Hz, 1H); δ = 6.97-6.90(m,2H); δ=4.30-4.26(m,1H); δ=3.64-3.60(m,2H); δ=2.87-2.83(m,2H).

[0132] (16) Synthesis of C16: The synthesis route is the same as that of C1, except that 2-amino-3-phenylpropanol is replaced by (S)-3-amino-4-(2-thienyl)butyric acid. After reaction and purification, compound C16 is obtained with a yield of about 68%. 1 H NMR (400MHz, DMSO-d6) δ = 12.04 (s, 1H); δ = 8.38 (s, 3H); δ = 7.37 (d, J = 7.2Hz, 1H); δ = 6.98-6.91(m,2H); δ=4.30-4.27(m,1H); δ=3.63-3.60(m,2H); δ=2.85-2.82(m,2H).

[0133] (17) Synthesis of C17: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by (R)-3-amino-4-(3-thienyl)butyric acid. After reaction and purification, compound C17 is obtained with a yield of about 51%. 1 H NMR (400MHz, DMSO-d6) δ = 12.01 (s, 1H); δ = 8.33 (s, 3H); δ = 7.22 (d, J = 7.2Hz, 1H); δ = 6.92-6.90(m,2H); δ=4.33-4.28(m,1H); δ=3.43-3.39(m,2H); δ=3.06-3.02(m,2H).

[0134] (18) Synthesis of C18: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by (S)-3-amino-3-(2-thienyl)propionic acid. After reaction and purification, compound C18 is obtained with a yield of about 57%. 1 H NMR (400MHz, DMSO-d6) δ = 12.51 (s, 1H); δ = 8.34 (s, 3H); δ = 7.22 (d, J = 7.2Hz, 1H); δ = 6.92-6.90 (m, 2H); δ = 5.23-5.19 (m, 1H); δ = 3.26-3.21 (m, 2H).

[0135] (19) Synthesis of C19: The synthesis route is the same as that of C2, except that 2-amino-1-phenylethanol is replaced by 3-([2,2'-bithiophene]-5-yl)-2-aminomethyl-1-propanol. After reaction and purification, compound C19 is obtained with a yield of about 21%. 1 H NMR (400MHz, DMSO-d6) δ = 8.31 (s, 1H); δ = 7.61 (d, J = 7.2Hz, 1H); δ = 7.51-7.47 (m, 2H); δ = 6.87-6.84 (m, 2H) ); δ = 4.26 (s, 1H); δ = 3.59-3.57 (m, 2H); δ = 3.39-3.35 (m, 2H); δ = 3.41-3.37 (m, 2H); δ = 2.52-2.48 (m, 1H).

[0136] (20) Synthesis of C20: 3-Bromo-2-(2-thienylmethyl)-1-amine (10 mmol) was dissolved in 20 mL of N,N-dimethylformamide, followed by dropwise addition of n-butylphosphine (PBu3, 11 mmol). The mixture was reacted at 80°C for 12 h, then poured into ether and filtered to obtain compound C20 with a yield of approximately 58%. 1 H NMR (400MHz, DMSO-d6) δ = 7.38 (d, J = 7.2Hz, 1H); δ = 6.93-6.88 (m, 2H); δ = 4.25 (s, 1H); δ = 3.57-3.5 1(m,2H); δ=2.87-2.77(m,2H); δ=1.98-1.91(m,1H); δ=1.45-1.27(m,20H); δ=0.93-0.88(m,9H).

[0137] 2. Fabrication of Perovskite Solar Cell Devices

[0138] Example 1:

[0139] (1) Take 20 pieces of 2.0 cm*2.0 cm FTO conductive glass and remove 0.35 cm of FTO at each end by laser etching to expose the glass substrate;

[0140] (2) Ultrasonic cleaning of the etched FTO conductive glass was performed several times with water, acetone, and isopropyl alcohol in sequence;

[0141] (3) The FTO conductive glass was blown dry with a nitrogen gun and placed in a UV ozone machine for further cleaning;

[0142] (4) Spin-coating a methanol solution of nano-nickel oxide (10 mg / mL) on the surface of FTO conductive glass at 2000 rpm, and removing the solvent by vacuum or annealing to form a nickel oxide film (30 nm thick);

[0143] (5) dissolving the self-assembling molecule [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl] phosphate in methanol (0.3 mg / mL) to obtain a self-assembling molecule solution, spin-coating the self-assembling molecule on the surface of the nickel oxide film at 3000 rpm, and obtaining a self-assembling molecular layer (5 nm thick) by vacuuming or annealing;

[0144] (6) Weigh lead iodide (726 mg), iodomethane (240 mg), cesium iodide (19 mg), and lead bromide (11 mg) and dissolve them in 1 mL of a mixed solution of DMF and DMSO (volume ratio 4:1). Stir for 3 h and filter with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. Spin-coat the perovskite precursor solution on the obtained self-assembled molecular layer at 3000 rpm, anneal at 100 °C for 30 min, and cool to room temperature. The active material of the perovskite absorption layer is a CsFA system with a thickness of 800 nm.

[0145] (7) PC 61 BM was dissolved in chlorobenzene (10 mg / mL), and C1 was added to the above solution (0.1 mg / mL, doping amount was 1%). The solution was spin-coated on the perovskite layer at 1500 rpm to prepare an electron transport layer. It was annealed at 100 ° C for 10 min to a thickness of 20 nm. Then, its blocking layer BCP was spin-coated at 5000 rpm to a thickness of 5 nm.

[0146] (8) The semi-finished product obtained in the above steps is placed in a vapor deposition machine, and a metal electrode Cu (thickness of 100 nm) is evaporated to obtain a battery device marked as Battery 1.

[0147] Example 2-5:

[0148] On the basis of Example 1, the method of adding the interface passivation material C1 is changed, and the addition of C1 is removed in step (7).

[0149] The difference is:

[0150] Example 2: In step (6), Cl was added to the perovskite precursor solution (0.1 mg / mL, with a doping amount of approximately 0.01%).

[0151] Example 3: In step (5), C1 was added to the methanol solution of the self-assembled molecules (doping amount was 0.3%);

[0152] Example 4 After the perovskite layer was prepared in step (6), an isopropanol solution of C1 (0.1 mg / mL, 30 μL) was spin-coated on the perovskite surface at 2000 rpm;

[0153] Example 5 After the self-assembled molecular layer was prepared in step (5), an isopropanol solution of C1 (0.1 mg / mL, 30 μL) was spin-coated on the surface of the self-assembled molecular layer at 2000 rpm.

[0154] The battery devices obtained in Examples 2-5 are marked as Batteries 2-5, respectively.

[0155] Example 6-24:

[0156] Based on Example 1, the types of interface passivation materials were changed, except that C1 was replaced with C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, and C20 in Examples 6-24, respectively. The battery devices obtained in Examples 6-24 are labeled as batteries 6-24.

[0157] Comparative Example 1:

[0158] Based on Example 1, the interface passivation material C1 in step (7) is removed to obtain a battery device labeled as battery 25.

[0159] Comparative Example 2:

[0160] Based on Example 1, C1 is replaced by D1 The resulting battery device is labeled as battery 26.

[0161] Comparative Example 2:

[0162] Based on Example 1, C1 is replaced by D2 The resulting battery device is labeled as battery 27.

[0163] 3. Perovskite solar cell device performance test

[0164] (1) IV measurement method:

[0165] By changing the bias voltage point and measuring the current at the same time, the IV characteristics of the sample under test can be obtained.

[0166] a) Place the test fixture containing the sample cell on the sample holder so that it is located in the measurement plane and ensure that the sample cell is located at the center of the solar simulator's output light spot (or the normal line of the photovoltaic cell is parallel to the center line of the solar simulator's light beam);

[0167] b) Using Guangyan's solar simulator, which complies with the national standard IEC61215 for testing, and using crystalline silicon solar cells to calibrate the light intensity to reach the intensity of one sun, at 1000W / m 2Under the condition of irradiance, a mask is installed on the sample battery to be tested, and the temperature of the sample battery is controlled by a temperature monitoring device so that the temperature of the sample is maintained at (30±5℃) during the measurement process;

[0168] c) Set the scanning direction, voltage range, scanning interval voltage and scanning interval time. It is recommended that the scanning interval should not be greater than 0.02V and the interval between two adjacent points should not be less than 0.3s. Measure the forward and reverse current-voltage characteristics of the sample battery under test and record the open circuit voltage V OC , short-circuit current J SC .

[0169] Calculation formula: Fill factor FF = J m *V m / V OC *J SC , energy conversion efficiency PCE=V OC *J SC *FF / P in .P in is the incident light intensity, which is equal to 10 3 W / m 2 .

[0170] The test results are shown in Table 1.

[0171] Table 1 Test parameters of various embodiments and comparative examples

[0172] Note: The optimal efficiency is the highest efficiency of the device after 1-10 days of natural aging. The efficiency on day 30 is the efficiency of the device after storage in nitrogen dark state.

[0173] 4. Analysis of perovskite solar cell device performance test results

[0174] As shown in Table 1, compared with the control examples without adding interface passivation materials and the control examples with adding other interface passivation materials, the interface passivation materials of different types and added in different ways in the embodiments of this invention all improve the performance of perovskite solar cell devices, with the optimal efficiency being between 24.79% and 25.58%, which is better than 19.05% when no interface passivation material is added, and 23.53% and 23.37% when other interface passivation materials are added; the efficiency on the 30th day is between 24.43% and 25.29%, which is better than 16.68% when no interface passivation material is added, and 21.05% and 20.88% when other interface passivation materials are added.

[0175] In addition, the interface passivation materials of different types and addition methods in the embodiments of this article all improve the stability of the perovskite solar cell device. The energy conversion efficiency after storage for 30 days decreases very little, which is better than the comparative example.

[0176] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell, wherein: The solar cell comprises an interface passivation material, wherein the interface passivation material comprises a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2): Wherein, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + Selected from ammonium or phosphonium; X - Any one selected from the group consisting of halogen ions, quasi-halogen ions, oxygen-containing acid radical ions, fluoride-containing acid radical ions, and sulfonimide anions; L1-L5 is selected from any one of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted by halogen, a heteroatom chain having 0-10 carbon atoms containing heteroatoms, a heteroatom chain having 0-10 carbon atoms containing heteroatoms substituted by halogen, and a single heteroatom, wherein the heteroatom includes one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein the alkylene chain having 0 carbon atoms means that the two groups respectively connected to L1-L5 are directly connected.

2. The solar cell according to claim 1, wherein: Q is selected from any one of hydroxyl (-OH), carboxyl (-COOH), thiol (-SH), amino (-NR'H), and amide (-NHCOR); R' is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, and an alkyl chain having 1 to 10 carbon atoms substituted by a halogen; R is selected from any one of a hydrogen atom, a halogen atom, an alkyl chain having 1 to 10 carbon atoms, an alkyl chain having 1 to 10 carbon atoms substituted by a halogen, a heteroatom chain having 1 to 10 carbon atoms containing heteroatoms, and a heteroatom chain having 1 to 10 carbon atoms substituted by a halogen, and the heteroatoms include one or more of nitrogen atoms, oxygen atoms, and sulfur atoms.

3. The solar cell according to claim 1 or 2, wherein: Ar in the first compound includes any one of the following structures Ar1-Ar15: Wherein, Y1-Y18 is selected from any one of oxygen atom (-O-), sulfur atom (-S-), and nitrogen atom substituted by R' (-NR'-); R' is selected from any one of hydrogen atom, alkyl chain with 1-10 carbon atoms, and alkyl chain with 1-10 carbon atoms substituted by halogen; R1-R79 is selected from any one of hydrogen atom, halogen atom, alkyl chain with 1-10 carbon atoms, alkyl chain with 1-10 carbon atoms substituted by halogen, heteroatom chain with 1-10 carbon atoms containing heteroatoms, and heteroatom chain with 1-10 carbon atoms substituted by halogen, wherein the heteroatoms include one or more of nitrogen atom, oxygen atom, and sulfur atom; in, represents a single bond connection site, when the structure of the interface passivation material is the formula (1), the structure Ar1-Ar15 is connected by the connected to said L1; and / or Ar in the second compound includes any one of the following structures Ar16-Ar30: The difference between Ar16 and Ar1 is that any one of R1-R5 is Ar17 differs from Ar2 in that any one of R6-R12 is replaced by Ar18 is different from Ar3 in that any one of R13-R19 is replaced by Ar19 is different from Ar4 in that any one of R20-R28 is replaced by Ar20 and Ar5 differ in that any one of R29-R31 is replaced by Ar21 differs from Ar6 in that any one of R32-R34 is replaced by Ar22 and Ar7 differ in that any one of R35-R37 is replaced by Ar23 and Ar8 differ in that any one of R38-R40 is replaced by Ar24 and Ar9 differ in that any one of R41-R45 is replaced by Ar25 differs from Ar10 in that any one of R46-R50 is replaced by Ar26 differs from Ar11 in that any one of R51-R55 is replaced by Ar27 differs from Ar12 in that any one of R56-R60 is replaced by Ar28 and Ar13 differ in that any one of R61-R69 is replaced by Ar29 differs from Ar14 in that any one of R70-R74 is replaced by Ar30 and Ar15 differ in that any one of R75-R79 is replaced by replace. When the structure of the interface passivation material is the formula (2), the structure Ar16-Ar30 is Connected to L4 and L5 respectively.

4. The solar cell according to any one of claims 1 to 3, wherein: The ammonium group includes -NR'3 + ; and / or the phosphonium group comprises -PR'3 + ; Wherein, R' is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, and an alkyl chain having 1 to 10 carbon atoms substituted by a halogen.

5. The solar cell according to any one of claims 1 to 4, wherein: The halogen ions include F - , Cl - Br - ,I - Any of; and / or The halogen-like ions include CN - 、OCN - 、SCN - Any of; and / or The oxygen-containing acid ions include NO3 - 、ClO3 - 、R”SO3 - 、R”COO - 、R”PO2(OH) - Any one of, wherein R" is selected from any one of a hydrogen atom, an alkyl chain having 1 to 10 carbon atoms, an alkyl chain having 1 to 10 carbon atoms substituted by halogen, Ar1-A15, and an alkyl chain having 1 to 10 carbon atoms substituted by Ar1-Ar15; and / or The fluoride-containing ions include BF4 - PF6 - Any of; and / or The sulfonimide anion includes (CF3SO2)2N - .

6. The solar cell according to any one of claims 1 to 5, wherein: The interface passivation material includes any one of the following structures C1-C27:

7. The solar cell according to any one of claims 1 to 6, wherein: The solar cell comprises a first electrode, a first transmission layer, a light absorption layer, a second transmission layer and a second electrode which are stacked in sequence; The interface passivation material is distributed in one or more layers of the first transmission layer, the light absorption layer, and the second transmission layer.

8. The solar cell according to claim 7, wherein: Based on the total mass of the doped base layer, the doping ratio of the interface passivation material is 0.005%-5%, and the doped base layer is any one of the first transmission layer, the light absorption layer, and the second transmission layer.

9. The solar cell according to any one of claims 7 or 8, wherein: The first transport layer is an electron transport layer, the second transport layer is a hole transport layer, or The first transport layer is a hole transport layer, and the second transport layer is an electron transport layer.

10. The solar cell according to any one of claims 1 to 6, wherein: The solar cell comprises a first electrode, a first transmission layer, a light absorption layer, a second transmission layer and a second electrode which are sequentially stacked, and the solar cell further comprises a passivation layer, wherein the interface passivation material is distributed in the passivation layer; The passivation layer is located between the first transmission layer and the light absorbing layer, and / or The passivation layer is located between the second transmission layer and the light absorbing layer.

11. The solar cell according to claim 10, wherein: The thickness of the passivation layer is 0.1-10 nm.

12. The solar cell according to claim 10 or 11, wherein: The first electrode, the first transmission layer, the light absorption layer, the second transmission layer and the second electrode are arranged in sequence from bottom to top from the light incident surface of the substrate layer, the first transmission layer is a hole transmission layer, the second transmission layer is an electron transmission layer, the light absorption layer includes a perovskite material, and the passivation layer is located between the electron transmission layer and the light absorption layer.

13. The solar cell according to claim 9 or 12, wherein: The material of the first electrode includes any one of fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide; and / or The light absorbing layer comprises a perovskite material, and the perovskite material comprises any one of ABX3, A2CDX6, wherein A is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a methylammonium ion, a n-butylammonium ion, and a cesium ion; B is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a lead ion and a tin ion; C is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from a silver ion; D is any one of an inorganic cation, an organic cation, and an organic-inorganic mixed cation, and can be selected from at least one of a bismuth cation, an antimony cation, and an indium cation; X is any one of an inorganic anion, an organic anion, and an organic-inorganic mixed anion, and can be selected from at least one of a bromide ion or an iodide ion; and / or The material of the electron transport layer includes [6,6]-phenyl C 61 Methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 Methyl butyrate (PC 71 BM), fullerene C 60 (C 60 ), Fullerene C 70 (C 70 ), tin dioxide (SnO2), zinc oxide (ZnO), perylene diimide (PDI) materials, naphthalene diimide (NDI) materials and their derivatives and at least one of the materials obtained by doping or passivation thereof; and / or The material of the hole transport layer includes one or more of metal oxide materials, polymer materials, organic small molecule self-assembly molecular materials and their derivatives and materials obtained by doping or passivation thereof; nickel oxide (NiO x2 , 1.5≥x2≥1), molybdenum oxide (MoO x3 , 3≥x3≥2.5), tungsten oxide (WO x3 ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), carbazole or triphenylamine materials containing phosphoric acid or carboxylic acid groups; and / or The electrode material of the second electrode includes one or more of organic conductive materials, inorganic conductive materials, and organic-inorganic mixed conductive materials; and can be selected from one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

14. The solar cell according to claim 13, wherein: The thickness of the first electrode is 10-1000 nm; and / or The light absorbing layer comprises a perovskite material, the band gap of the perovskite material is 1.20-2.30 eV, and the thickness of the light absorbing layer is 200-1000 nm; and / or The thickness of the electron transport layer is 5-100 nm; and / or The thickness of the hole transport layer is 0.5-50 nm; and / or The thickness of the second electrode is 10-1000 nm.

15. The solar cell according to claim 13 or 14, wherein: The solar cell further comprises a blocking layer, wherein the blocking layer is located between the electron transport layer and the first electrode, or the blocking layer is located between the electron transport layer and the second electrode; The material of the barrier layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, tin dioxide, zinc oxide, and cerium oxide, wherein the chemical formula of cerium oxide is CeO x1 , and 1.5≤x1≤2, and the thickness of the barrier layer is 0.5-200nm.

16. An interface passivation material, wherein: The interface passivation material comprises a first compound having a chemical formula of formula (1) and / or a second compound having a chemical formula of formula (2): Wherein, Ar is an aromatic group; Q is a functional group containing active hydrogen; A + Selected from ammonium or phosphonium; X - Any one selected from the group consisting of halogen ions, quasi-halogen ions, oxygen-containing acid radical ions, fluoride-containing acid radical ions, and sulfonimide anions; L1-L5 is selected from any one of an alkylene chain having 0-10 carbon atoms, an alkylene chain having 0-10 carbon atoms substituted by halogen, a heteroatom chain having 0-10 carbon atoms containing heteroatoms, a heteroatom chain having 0-10 carbon atoms containing heteroatoms substituted by halogen, and a single heteroatom, wherein the heteroatom includes one or more of a nitrogen atom, an oxygen atom, and a sulfur atom, wherein the alkylene chain having 0 carbon atoms means that the two groups respectively connected to L1-L5 are directly connected.

17. A photovoltaic power generation system, wherein: Comprising the solar cell according to any one of claims 1 to 15.

18. An electrical device, wherein: Comprising the solar cell according to any one of claims 1 to 15.

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