Oscillation method of wafer oscillation apparatus, and wafer oscillation apparatus and chemical plating device

Abstract

The present application relates to an oscillation method of a wafer oscillation apparatus, and a wafer oscillation apparatus and a chemical plating device. The method comprises: controlling an oscillation frame to move from a first position to a second position, wherein the first position is located above the second position, and both the first position and the second position are lower than a liquid level in a process tank of a chemical plating device; and controlling a first speed to be within a first preset speed range when the oscillation frame reaches the second position and before the oscillation frame stops movement, such that the oscillation frame can generate vibration of a first preset amplitude when stopping movement. By means of the oscillation method of a wafer oscillation apparatus, the wafer oscillation apparatus and the chemical plating device in the present application, the uniformity of a plated layer can be improved.

Description

Wafer polishing method, wafer polishing device and chemical plating equipment

[0001] Related applications

[0002] This application claims priority to the Chinese patent application filed on December 20, 2023, with application number 202311761973.2, entitled “Polishing method of wafer polishing device, wafer polishing device and chemical plating equipment”, the entire text of which is hereby incorporated by reference. Technical Field

[0003] The present application relates to the field of surface treatment technology, and in particular to a polishing method of a wafer polishing device, a wafer polishing device and chemical plating equipment. Background Art

[0004] During the manufacturing process of semiconductor chips, a layer of nickel is typically plated on the surface of the chip to improve its solderability. During the soldering process, a layer of gold is then plated on top of the nickel layer to prevent oxidation. Common methods for nickel-gold plating include chemical nickel plating and electroplating. Chemical nickel plating is widely used due to its simplicity and low cost.

[0005] However, with the development of semiconductor technology, the requirements for uniformity of coatings are becoming increasingly higher, and existing chemical plating equipment is gradually unable to meet the requirements.

[0006] Summary of the Invention

[0007] In view of this, the embodiments of the present application provide a wafer polishing method, a wafer polishing device and a chemical plating equipment to solve the technical problems existing in the background technology.

[0008] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0009] In a first aspect, an embodiment of the present application provides a polishing method of a wafer polishing device, which is applied to a coating device, comprising:

[0010] Controlling the throwing frame to move from a first position to a second position, wherein the first position is above the second position, and both the first position and the second position are lower than the liquid level of the process tank of the coating equipment;

[0011] The first speed of the throwing frame before it reaches the second position and stops moving is controlled to be within a first preset speed range, so that the throwing frame can generate vibration with a first preset amplitude when it stops moving.

[0012] Optionally, controlling the throwing frame to reach the second position and to have a first speed within a first preset speed range before stopping the movement comprises:

[0013] The stroke for controlling the movement of the throwing frame includes at least an acceleration section and a deceleration section, so that the first speed of the throwing frame before reaching the second position and stopping is within the first preset speed range, and the time required for the throwing frame to reach the second position is less than the first preset time, wherein the first preset time is the preset process time for the throwing frame to descend.

[0014] Optionally, the stroke of controlling the movement of the throwing frame includes at least an acceleration section and a deceleration section, including:

[0015] The accelerations of the acceleration section and the deceleration section in the stroke of controlling the movement of the throwing frame are both constant values.

[0016] Optionally, the deceleration section includes:

[0017] Controlling the throwing frame to decelerate at a preset first acceleration for a second preset time, wherein the second preset time is less than the time the throwing frame spends in the deceleration section;

[0018] The throwing frame is controlled to move at a deceleration speed at a preset second acceleration until it reaches the second position, wherein the absolute value of the second acceleration is smaller than the absolute value of the first acceleration.

[0019] Optionally, the method further includes:

[0020] controlling the throwing frame to move from the second position to the first position;

[0021] The second speed of the throwing frame before it reaches the first position and stops moving is controlled to be within a second preset speed range, so that the throwing frame can generate vibration with a second preset amplitude when it stops moving.

[0022] Optionally, controlling the throwing frame to reach the first position and to have a second speed within a second preset speed range before stopping the movement includes:

[0023] The stroke for controlling the movement of the throwing frame includes at least an acceleration section and a deceleration section, so that the second speed of the throwing frame before reaching the first position and stopping is within the second preset speed range, and the time required for the throwing frame to reach the first position is less than a third preset time, wherein the third preset time is the preset process time for the throwing frame to rise.

[0024] In a second aspect, an embodiment of the present application provides a wafer polishing device, applicable to any one of the wafer polishing methods described above, the polishing device comprising:

[0025] A driving member having a driving output shaft and a supporting member connected to the output shaft;

[0026] a throwing arm connected to the driving member and moving up and down under the action of the driving member;

[0027] A throwing frame is connected to the throwing arm and can move with the throwing arm, and has a hollow accommodating cavity, wherein the accommodating cavity is used to place a flower basket containing wafers;

[0028] The limiting assembly includes a first limiting member and a second limiting member, and the supporting member moves between the first limiting member and the second limiting member following the output shaft.

[0029] Optionally, the first limiting member has a bottom surface, and when the abutting member abuts against the bottom surface of the first limiting member, the throwing frame is located at the first position;

[0030] The second position-limiting member has a top surface, and when the abutting member abuts against the top surface of the second position-limiting member, the throwing frame is located at the second position.

[0031] Optionally, the tossing arm includes a positioning slot;

[0032] The throwing frame has a positioning block adapted to the positioning groove, and the throwing frame is connected to the throwing arm through the positioning groove and the positioning block.

[0033] In a third aspect, an embodiment of the present application provides a chemical plating device, comprising: a loading device, a wafer polishing device, a plurality of process tanks, and a plurality of unloading devices;

[0034] Wherein, the wafer polishing device is any one of the wafer polishing devices described above.

[0035] Embodiments of the present application provide a wafer-throwing method, a wafer-throwing device, and an electroless plating apparatus. The method comprises: controlling a throwing frame to move from a first position to a second position, wherein the first position is above the second position, and both the first position and the second position are below the liquid level in a process tank of the coating apparatus; and controlling a first speed of the throwing frame before it reaches the second position and stops moving to be within a first preset speed range, so that the throwing frame generates vibrations of a first preset amplitude when it stops moving. It can be seen that the wafer-throwing method, the wafer-throwing device, and the electroless plating apparatus of the embodiments of the present application control the first speed of the throwing frame before it stops moving to be within the first preset speed range, so that the throwing frame generates vibrations of a first preset amplitude when it stops moving. The wafer autocatalytically generates hydrogen bubbles of varying sizes in the plating solution, and these bubbles adhere to the wafer surface. With this arrangement, the friction between the wafer and the plating solution during the wafer's descent can remove large bubbles on the wafer surface. On this basis, the vibration of the first preset amplitude in the present application can more effectively remove small-diameter hydrogen bubbles attached to the wafer surface, thereby achieving a bubble-free wafer surface, allowing the plating solution to fully contact the product to be plated, improving the uniformity of the plated layer, and also preventing damage to the product to be plated due to excessive vibration. Therefore, the polishing method, wafer polishing device, and chemical plating equipment of the embodiments of the present application can improve the uniformity of the plated layer.

[0036] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0038] FIG1 is a schematic diagram of a chemical plating apparatus according to an embodiment of the present application;

[0039] FIG2 is a second schematic diagram of the chemical plating equipment provided in an embodiment of the present application;

[0040] FIG3 is a schematic flow chart of a wafer polishing method of a wafer polishing device provided in an embodiment of the present application;

[0041] FIG4 is a first schematic diagram of a change in the moving speed of a wafer throwing frame in a throwing method of a wafer throwing device provided in an embodiment of the present application;

[0042] FIG5 is a second schematic diagram of the change in the moving speed of the polishing frame in the polishing method of the wafer polishing device provided in an embodiment of the present application.

[0043] Description of reference numerals:

[0044] 20. Wafer polishing device; 21. Driving member; 211. Supporting member; 22. Polishing arm; 221. Clamping frame; 222. Positioning groove; 23. Polishing frame; 231. Positioning block; 241. First limiting member; 242. Second limiting member; 30. Process tank; 40. Flower basket. DETAILED DESCRIPTION

[0045] To make the technical solutions and beneficial effects of this application more clearly understood, the following detailed description is given by way of specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly illustrate the details of the local features. Unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application belongs.

[0046] In the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of simplifying the description of this application, and do not indicate that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation to this application.

[0047] In this application, the terms "first" and "second" are used solely for descriptive purposes and should not be construed as indicating the relative importance of the features indicated or the quantity of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly include at least one of such features. Throughout this application, "plurality" means at least two, such as two or three, and "several" means at least one, such as one, two, or three, unless otherwise specifically defined.

[0048] In this application, unless otherwise expressly defined, the terms "installed," "connected," "connect," "fixed," and "disposed" should be interpreted broadly. For example, "connection" can mean fixed, removable, or integrated; it can mean mechanical or electrical; it can mean direct or indirect connection through an intermediary; it can also mean internal communication between two components or an interaction between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0049] In the present application, unless otherwise explicitly defined, when a first feature is “on,” “above,” “above,” “above,” “below,” “below,” or “below” a second feature, the first feature and the second feature may be in direct contact, or the first feature and the second feature may be in indirect contact via an intermediate medium. Moreover, when a first feature is “on,” “above,” or “above” a second feature, it may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than the horizontal height of the second feature. When a first feature is “below,” “below,” or “below” a second feature, it may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0050] In order to fully understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0051] Among the related technologies, plating technology is widely used in semiconductor manufacturing fields such as wire bonding and flip-chip packaging, 3D integration, and micro-electromechanical systems (MEMS).

[0052] However, after extensive research, the inventors of the present application discovered that when plating semiconductor wafers, a large number of bubbles will be generated in the plating solution during the autocatalytic reaction during the deposition of the coating. These bubbles include bubbles with relatively large diameters and bubbles with relatively small diameters. These bubbles will adhere to the surface of the wafer as they are deposited, causing the plating solution to be unable to make good contact with the surface of the wafer, thereby affecting the deposition of the coating. It is even possible that the bubbles will enter the deposition layer of the coating and generate stress, thereby reducing the quality of the coating.

[0053] Therefore, the inventors of this application proposed the following technical solution after further extensive research.

[0054] The present invention provides a wafer polishing method for a wafer polishing device, which is applied to a coating device. In this embodiment, the coating device is an electroless plating device as an example. The aforementioned plating solution generates a large number of bubbles, i.e., hydrogen bubbles, hereinafter referred to as bubbles, during the autocatalytic reaction. Therefore, the present invention provides an electroless plating device and a wafer polishing device 20 in the electroless plating device, as well as a polishing method for the wafer polishing device 20. Referring to Figures 1 and 2, the electroless plating device includes: a loading device, a wafer polishing device 20, a plurality of process tanks 30, and a plurality of unloading devices. The wafer polishing device 20 includes: a driving member 21 having a drivable output shaft and a support member 211 connected to the output shaft, a polishing arm 22 connected to the driving member 21, and a polishing frame 23 connected to the polishing arm 22. The polishing frame 23 has a hollow accommodating cavity. A flower basket 40 containing wafers is fixed in the hollow accommodating cavity by a fixing member. The fixing member can limit relative movement between the flower basket and the polishing frame. When the wafer throwing device is working, the driving member can drive the throwing arm 22 to drive the throwing frame 23 to move up and down, thereby driving the flower basket 40 and the wafer in the throwing frame 23 to move in the plating solution of the process tank.

[0055] In other embodiments, the coating equipment may further include other coating equipment such as electroplating equipment. The wafer polishing device and the polishing method of the wafer polishing device are also applicable to other coating equipment and will not be described in detail here.

[0056] It should be noted that in this embodiment, the throwing frame 23 has a hollow cavity for placing the flower basket 40, and the flower basket 40 is an open hollow structure. When the throwing frame 23 and the flower basket 40 are located in the plating solution, the plating solution can pass through the hollow cavity and the hollow flower basket to contact the wafer, achieving a coating effect on the wafer. In this embodiment, the throwing frame with the hollow cavity is a rectangular structure, and each hollow cavity can accommodate two flower baskets. In other embodiments, the structure, shape, and specifications of the throwing frame are not specifically limited, as long as they can achieve the above-mentioned effects.

[0057] Specifically, in this embodiment, the driving member 21 is a cylinder. The cylinder may include a cylinder barrel and a piston rod. The output shaft of the driving member 21 may be the piston rod of the cylinder.

[0058] In other embodiments, the driving member 21 may be a motor. Furthermore, since the sling motion is a linear movement, the power output end of the motor may also be provided with a conversion mechanism for converting rotation into motion, such as a nut and screw, a worm gear, a rack and pinion, etc. The output shaft may be the motion output component after the conversion.

[0059] In this embodiment, the wafer polishing device further includes a limit assembly for limiting the movement of the abutment 211, and the movement of the abutment 211 is a linear trajectory. Specifically, the limit assembly includes a first limit member 241 and a second limit member 242, and the abutment 211 follows the output shaft and moves between the first limit member 241 and the second limit member 242. More specifically, the first limit member 241 limits the extreme position of the abutment 211 in one direction, and the second limit member 242 limits the extreme position of the abutment 211 in another direction. Since the abutment 211 is connected to the output shaft, that is, the two are linked, the limit assembly also limits the movement of the output shaft, thereby limiting the movement of the polishing arm 22 and the polishing frame 23, so that the polishing frame 23 moves linearly between two preset positions.

[0060] Specifically, the motion of the throwing frame 23 in this embodiment is an up and down linear motion.

[0061] In some embodiments, the first limiting member 241 has a bottom surface, and when the abutting member 211 abuts against the bottom surface of the first limiting member 241 , the throwing frame 23 is located at the first position;

[0062] The second position-limiting member 242 has a top surface. When the abutting member 211 abuts against the top surface of the second position-limiting member 242 , the throwing frame 23 is located at the second position.

[0063] The bottom surface and the top surface make the limiting of the supporting member 211 more stable, so that the throwing frame 23 can be stably located at the first position or the second position.

[0064] Moreover, due to the setting of the first limiting member 241, the throwing frame 23 with a certain moving speed can be limited by the first limiting member 241 during the upward movement, and then the speed of the throwing frame is reduced to 0. Since the flower basket and the throwing frame are fixed by the fixing member, the speed of the flower basket is also reduced to 0.

[0065] Due to the setting of the second limiter 242, the throwing frame 23 with a certain moving speed can be limited by the second limiter 242 during the downward movement, and the speed of the throwing frame is reduced to 0. Since the flower basket and the throwing frame are fixed by the fixing parts, the speed of the flower basket is also reduced to 0. At this time, the wafers installed in the flower basket still have a certain moving speed, so they come into contact with the flower basket and vibrate, and the large-diameter bubbles and small-diameter bubbles attached to the wafers are affected by the vibration and can detach from the wafers and rise, so that the wafer surface can fully contact with the plating solution, producing a more uniform coating.

[0066] In some embodiments, the wafer throwing device further includes a damper, which can adjust the movement speed of the throwing frame 23 .

[0067] Furthermore, two dampers are provided. The two dampers can be positioned near the first limiter 241 and the second limiter 242 or integrated into the cylinder, as long as the speed of the tossing frame 23 can be adjusted. For example, in this embodiment, the dampers can switch between the acceleration stage and the deceleration stage. Furthermore, the provision of the dampers can reduce the vibration generated by the tossing frame 23 when it moves to the first limiter 241 or the second limiter 242, thereby reducing the force of the relative collision between the wafer and the tossing frame 23 and preventing wafer breakage. In other embodiments, other buffering and deceleration structures may also be provided. Their structure and location are not specifically limited here, as long as they can achieve the above-mentioned effects.

[0068] In some embodiments, the tossing arm 22 includes a positioning slot 222;

[0069] The throwing frame 23 has a positioning block 231 adapted to the positioning groove 222 . The throwing frame 23 is connected to the throwing arm 22 via the positioning groove 222 and the positioning block 231 .

[0070] By means of the positioning groove 222 and the positioning block 231 , the connection between the throwing frame 23 and the throwing arm 22 can be a more flexible and detachable connection, and the positioning of the connection is also more convenient and accurate.

[0071] Specifically, the tossing arm 22 includes a clamping frame 221 surrounding the tossing frame 23. The positioning slot 222 is provided in the clamping frame 221. The positioning block 231 is disposed at the top of the tossing frame 23 and is a certain distance away from the top of the flower basket 40 in the tossing frame 23 so that the clamping frame 221 is above the liquid level during plating.

[0072] The principle of the wafer throwing device for removing bubbles from the wafer surface is as follows: the driving member 21 drives the throwing frame 23 to move between the first limit member 241 and the second limit member 242, thereby driving the flower basket 40 to move up and down in the plating solution. In this embodiment, during the descent of the flower basket 40 and the wafers, the wafers in the flower basket 40 will not separate from the flower basket 40, but will move downward together with the flower basket 40 until they reach the second position. The throwing frame 23 and the flower basket 40 move at a first speed to the second position and suddenly stop. At this time, the wafers in the flower basket 40 still have a tendency to move downward. Due to contact with the bottom of the flower basket 40 and the reaction force thereof, vibrations of a first preset amplitude are generated. As a result, during the descent of the wafer, the friction generated between the wafer and the plating solution can remove large-diameter bubbles on the wafer surface, while the vibrations of the first preset amplitude can remove small-diameter bubbles on the wafer surface. During the ascending process, when the tossing frame 23 reaches the first position, the tossing frame 23 and the basket 40 stop moving. The wafers in the basket 40 tend to continue moving upward due to inertia. Since the basket 40 is open, the wafers do not come into contact with any structure above them. At this point, the wafers wobble relative to the basket 40, but this wobble is minor and negligible. In the next process, the tossing frame 23 stays in the first position for a short time. As the basket 40 continues to descend with the tossing frame 23, the wafers fall into the basket 40 under the action of gravity and then descend again with it. The wafers do not become detached from the basket 40 during the descent. Therefore, during the upward movement of the wafers, the friction between the wafers and the plating solution also removes large bubbles from the wafer surface, achieving a certain debubbling effect.

[0073] Specifically, in this embodiment, the acceleration of the throwing frame 23 is 0.4g to 0.6g.

[0074] 3 , the wafer polishing method of the wafer polishing device provided in the embodiment of the present application includes:

[0075] Step 601: Controlling the throwing frame 23 to move from a first position to a second position, wherein the first position is above the second position, and both the first position and the second position are lower than the liquid level of the process tank 30 of the coating equipment;

[0076] Step 602 : Controlling the throwing frame 23 to reach the second position and to have a first speed within a first preset speed range before stopping, so that when the throwing frame 23 stops moving, the wafer can generate vibrations with a first preset amplitude.

[0077] The method can be implemented by a computer, which can be a computing device configured with a processor, and the processor can be a general-purpose processor, a digital signal processor (DSP), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0078] In step 601, the driving member 21 is controlled to drive the throwing frame 23 to move from a first position at the top to a second position at the bottom. This is achieved by lowering the supporting member 211, thereby driving the basket 40 and wafers within the throwing frame 23 from the opening of the process tank 30 to the bottom of the process tank 30.

[0079] In this embodiment, since the wafer polishing device is used in chemical plating equipment, process tank 30 is also called a plating tank and contains a plating solution, also known as a chemical solution. The wafer is immersed in the process tank for a certain period of time to complete the plating process. Of course, it is also necessary to control the composition, temperature, and immersion time of the plating solution, which will not be discussed in detail here.

[0080] In other embodiments, the wafer polishing device can also be used in other equipment. In this case, the process tank is other corresponding functional tanks. Of course, the liquid in the process tank is also the liquid that can realize the function of the corresponding functional tank. There is no specific limitation on the application of the wafer polishing device, the type of liquid, and the function of the process tank, which can be determined according to actual conditions.

[0081] In step 602, vibration of a first predetermined amplitude is generated to remove hydrogen bubbles attached to the surface of the wafer and further improve the coating quality. The first predetermined amplitude should be neither too large nor too small. A large amplitude could easily damage the wafer, while a small amplitude could not achieve the desired effect of removing bubbles.

[0082] In some embodiments, the amplitude of the vibration is controlled by controlling the first speed of the throwing frame 23 before it stops moving.

[0083] Specifically, the throwing frame 23 and the flower basket 40 move at a first speed to a second position and suddenly stop. At this time, the wafers in the flower basket 40 come into contact with the bottom of the flower basket 40 at the first speed, thereby generating vibration, thereby achieving the effect of removing bubbles on the surface of the wafers.

[0084] In other embodiments, while ensuring that the wafer is not damaged, the vibration frequency and waveform can be adjusted to better remove bubbles attached to the surface of the wafer. The vibration mode of the wafer is not specifically limited herein, as long as it can effectively remove bubbles attached to the surface of the wafer.

[0085] In some embodiments, controlling the first speed of the throwing frame 23 to reach the second position and stop moving to be within a first preset speed range includes:

[0086] The stroke for controlling the movement of the throwing frame 23 includes at least an acceleration section and a deceleration section, so that the first speed of the throwing frame 23 before reaching the second position and stopping is within a first preset speed range, and the time required for the throwing frame 23 to reach the second position is less than a first preset time; the first preset time is the preset process time for the throwing frame 23 to descend.

[0087] Understandably, to reduce the time it takes for the throwing frame 23 to descend and improve production efficiency, the throwing frame 23 needs to move quickly. However, to reduce damage to the wafers, the initial speed before stopping should not be too high. Therefore, the throwing frame 23 requires both an acceleration section and a deceleration section during its movement, as shown in Figures 4 and 5.

[0088] In some embodiments, the stroke of controlling the movement of the throwing frame 23 includes at least an acceleration section and a deceleration section, including:

[0089] The acceleration of the tossing frame 23 during its travel is controlled to be constant during both the acceleration and deceleration phases. That is, the acceleration phase is uniformly accelerated, and the deceleration phase is uniformly decelerated (see Figure 4). This minimizes damage to the wafers during the travel of the tossing frame 23.

[0090] It is understood that in other embodiments, referring to FIG. 5 , the throwing frame 23 may be in a variable acceleration motion, whether accelerating or decelerating, as long as the first speed is within a first predetermined speed range, thereby generating a vibration having a first predetermined amplitude from moving at the first speed to stopping. The variable speed range may be controlled within a certain range.

[0091] In some embodiments, the deceleration section may include at least two deceleration sections, which are the same as those described above, as long as the first speed can be within a first preset speed range, so that it can generate vibrations with a first preset amplitude from moving at the first speed to stopping, and the speed change range is controlled within a certain range.

[0092] The deceleration section includes:

[0093] Controlling the throwing frame 23 to decelerate at a preset first acceleration for a second preset time; the second preset time is less than the time the throwing frame 23 spends in the deceleration section;

[0094] The throwing frame 23 is controlled to move at a deceleration speed at a preset second acceleration until it reaches the second position; the absolute value of the second acceleration is smaller than the absolute value of the first acceleration.

[0095] That is, the deceleration section can be a two-stage deceleration, which can not only reduce the time of the deceleration section and improve processing efficiency, but also make the process of the throwing frame 23 entering the first preset speed range from the first speed before stopping moving smoother.

[0096] Specifically, the second preset time can be half the time the tossing frame 23 spends in the deceleration stage. This facilitates control and smoother operation. It is understood that the deceleration stage can be a multi-stage deceleration with more than two deceleration sections. This can further reduce the time the tossing frame 23 spends in the deceleration stage, thereby improving processing efficiency.

[0097] In some embodiments, the method further comprises:

[0098] Controlling the throwing frame 23 to move from the second position to the first position;

[0099] The second speed of the throwing frame 23 before it reaches the first position and stops moving is controlled to be within a second preset speed range, so that when the throwing frame 23 stops moving, the wafer shakes in the flower basket 40, and the shaking cannot cause bubbles on the wafer surface to separate from the wafer.

[0100] Specifically, during the ascent of the tossing frame 23, when it abuts against the first stopper 241, the tossing frame 23 and the basket 40 both stop moving. At this point, the wafers in the basket 40 still tend to move upward, generating inertia that causes the wafers to sway slightly up and down. (Since the basket 40 is an open structure, there is no structure that comes into contact with the wafers as they sway slightly up and down. Therefore, the rising wafers are not subject to any other forces, such as the upward reaction force of the basket 40 caused by contact between the wafers and the basket 40 when the wafers descend, and thus the bubble removal effect cannot be achieved.) However, as the wafers in the basket 40 move from the bottom of the process tank to near the top as the tossing frame 23 does, the bubbles on the surface of the wafers also tend to move upward. During this movement, the friction between the wafers and the plating solution intensifies, accelerating the removal of hydrogen bubbles due to friction.

[0101] In some embodiments, controlling the second speed of the throwing frame 23 to reach the first position and stop moving to be within a second preset speed range includes:

[0102] The stroke for controlling the movement of the throwing frame 23 includes at least an acceleration section and a deceleration section, so that the second speed of the throwing frame 23 before reaching the first position and stopping is within a second preset speed range, and the time required for the throwing frame 23 to reach the first position is less than a third preset time; the third preset time is the preset process time for the throwing frame 23 to rise.

[0103] Understandably, to reduce the time it takes for the throwing frame 23 to descend and improve production efficiency, the throwing frame 23 needs to move quickly. However, to minimize damage to the wafers, the second speed before stopping should not be too high. Therefore, the throwing frame 23 requires both an acceleration segment and a deceleration segment during its movement. It is understood that multiple acceleration segments and multiple deceleration segments may be provided.

[0104] It should be noted that the movement of the tossing frame 23 includes both a descending stroke and an ascending stroke, and there is no mandatory order in which they are performed; that is, either the descending stroke or the ascending stroke can be performed first. However, the descending stroke is more effective in removing hydrogen bubbles, so the descending stroke will be discussed first. The ascending stroke is similar to the descending stroke, except for the different movement directions and slightly different effects. For details not discussed in the ascending stroke, please refer to the descending stroke.

[0105] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the claims. Various modifications and variations may be made to the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments merely represent several implementations of the present application and do not limit the scope of protection of the patent application.

Claims

1. A wafer polishing method for a wafer polishing device, applied to a coating device, characterized in that: include: Controlling the throwing frame to move from a first position to a second position, wherein the first position is above the second position, and both the first position and the second position are lower than the liquid level of the process tank of the coating equipment; The first speed of the throwing frame before it reaches the second position and stops moving is controlled to be within a first preset speed range, so that the throwing frame can generate vibration with a first preset amplitude when it stops moving.

2. The wafer polishing method according to claim 1, characterized in that: The controlling the throwing frame to reach the second position and the first speed before stopping the movement is within a first preset speed range comprises: The stroke for controlling the movement of the throwing frame includes at least an acceleration section and a deceleration section, so that the first speed of the throwing frame before it reaches the second position and stops moving is within the first preset speed range, and the time required for the throwing frame to reach the second position is less than the first preset time, wherein the first preset time is the preset process time for the throwing frame to descend.

3. The wafer polishing method according to claim 2, characterized in that: The stroke of controlling the movement of the throwing frame at least includes an acceleration section and a deceleration section, including: The accelerations of the acceleration section and the deceleration section in the stroke of controlling the movement of the throwing frame are both constant values.

4. The wafer polishing method according to claim 3, characterized in that: The deceleration section comprises: Controlling the throwing frame to decelerate and move at a preset first acceleration for a second preset time, wherein the second preset time is less than the time the throwing frame spends in the deceleration section; Control the throwing frame to decelerate and move at a preset second acceleration until it reaches the second position, wherein the absolute value of the second acceleration is smaller than the absolute value of the first acceleration.

5. The wafer polishing method of claim 1, wherein: The method further comprises: Controlling the throwing frame to move from the second position to the first position; The second speed of the throwing frame before it reaches the first position and stops moving is controlled to be within a second preset speed range, so that the throwing frame can generate vibration with a second preset amplitude when it stops moving.

6. The wafer polishing method of claim 5, wherein: The controlling the throwing frame to reach the first position and the second speed before stopping the movement is within a second preset speed range comprises: The stroke for controlling the movement of the throwing frame includes at least an acceleration section and a deceleration section, so that the second speed of the throwing frame before it reaches the first position and stops moving is within the second preset speed range, and the time required for the throwing frame to reach the first position is less than a third preset time, wherein the third preset time is the preset process time for the throwing frame to rise.

7. A wafer polishing device, characterized in that: The wafer polishing method of any one of claims 1 to 6 is applicable, wherein the wafer polishing device comprises: A driving member having a driving output shaft and a supporting member connected to the output shaft; A tossing arm connected to the driving member and moving up and down under the action of the driving member; A throwing frame is connected to the throwing arm, can move with the throwing arm, and has a hollow accommodating cavity, wherein the accommodating cavity is used to place a flower basket containing wafers; The limiting assembly comprises a first limiting member and a second limiting member, and the abutting member follows the output shaft to move between the first limiting member and the second limiting member.

8. The wafer polishing device according to claim 7, characterized in that: The first position-limiting member has a bottom surface, and when the abutting member abuts against the bottom surface of the first position-limiting member, the throwing frame is located at the first position; The second position-limiting member has a top surface, and when the abutting member abuts against the top surface of the second position-limiting member, the throwing frame is located at the second position.

9. The wafer polishing device according to claim 7, characterized in that: The tossing arm includes a positioning slot; The throwing frame has a positioning block adapted to the positioning groove, and the throwing frame is connected to the throwing arm through the positioning groove and the positioning block.

10. A chemical plating device, characterized in that: include: A loading device, a wafer polishing device, several process tanks and several unloading devices; Wherein, the wafer polishing device is the wafer polishing device described in any one of claims 7-9.

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