Thin film deposition apparatus, thin film deposition method, and thin film deposition device

Abstract

The present invention provides a thin film deposition apparatus, comprising a processing chamber. The processing chamber comprises: N processing stations distributed in a regular polygon mode and used for thin film deposition, wherein N is greater than or equal to 3; and N process manipulators, each of which is arranged between two adjacent processing stations and used for conveying a substrate between the two corresponding adjacent processing stations, wherein one end of each process manipulator is rotatably connected to the processing chamber, and the rotatable connection point is located on the midperpendicular plane of the connecting line between the circle centers of the two corresponding adjacent processing stations. In the present invention, the substrate is conveyed among the plurality of processing stations by means of the process manipulators, and the area of the substrate close to the center of the processing chamber changes after being conveyed, so that thin films deposited at the plurality of processing stations can produce a compensation effect, improving the uniformity of multiple layers of thin films deposited on the substrate, avoiding deviation of etched vias of the thin films deposited on the substrate from the vertical direction in the subsequent etching process, and thus further ensuring the stability of the performance of semiconductor devices.

Description

Thin film deposition device, thin film deposition method, and thin film deposition equipment Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing equipment, and in particular to a thin film deposition device, a thin film deposition method and thin film deposition equipment. Background Art

[0002] Semiconductor manufacturing often involves the use of plasma-enhanced chemical vapor deposition (PECVD) to deposit one or more material layers onto a heated substrate. Currently, multi-station thin film deposition equipment is widely used. This multi-station design not only significantly improves the process efficiency of thin film deposition, but also reduces the floor space occupied in the cleanroom.

[0003] In existing multi-station thin film deposition systems, the process chambers are typically designed to be centrally symmetrical. Due to crosstalk between the processing stations, process factors such as RF energy and airflow can be distributed toward the center of the process chamber, resulting in thicker films toward the center of the substrate.

[0004] When deposited thin films exceed 200 layers, their uniformity and quality degrade. The continued stacking of different thin films amplifies the deviations in fixed positions, causing the uniformity of the films on the substrate to deviate from the controllable range. This makes it impossible to achieve accurate through-hole etching in the subsequent etching process, causing the etched through-holes to deviate from the vertical direction during the etching process, further leading to failure of semiconductor devices. Summary of the Invention

[0005] An object of the present invention is to provide a thin film deposition device, a thin film deposition method and a thin film deposition apparatus, which are used to solve the problem of poor uniformity of thin films deposited on substrates in the prior art.

[0006] To achieve the above-mentioned and other related purposes, the present invention provides a thin film deposition apparatus, including a processing chamber, wherein the processing chamber includes:

[0007] N processing stations distributed in a regular polygonal shape for thin film deposition; wherein N ≥ 3;

[0008] N process robots are respectively arranged between two adjacent processing stations for transferring substrates between the two adjacent processing stations; one end of each process robot is rotatably connected to the processing chamber, and the rotation connection point is located on the median perpendicular plane of the line connecting the centers of the two adjacent processing stations.

[0009] Optionally, the rotation angle of the process robot between two adjacent processing stations is 360° / N.

[0010] Optionally, the processing station includes: a heating tray for carrying and heating the substrate; a support member inserted into the heating tray for supporting the substrate; and a lifting mechanism for driving the support member to rise or fall, so as to lift the substrate off the heating tray or process robot, or to place the substrate on the heating tray or process robot.

[0011] Optionally, the rotational connection point is fixed relative to the processing chamber, and the rotational connection point is located higher than the processing station.

[0012] Optionally, the rotational connection point can be raised and lowered relative to the processing chamber, and the rotational connection point is arranged at any height within the processing chamber.

[0013] Optionally, the number of the processing stations and the number of the process robots are both four.

[0014] Optionally, the support member includes a thimble, a through hole is formed on the heating tray, and the thimble is arranged in the through hole.

[0015] Optionally, there are three ejector pins and three through holes, which correspond one to one with the ejector pins.

[0016] Optionally, each through hole is equidistant from the edge of the heating tray, the ejectors are arranged in an equilateral triangle, and one of the ejectors is a central ejector, which is distributed on a line connecting the center of the processing station and the center of the processing chamber.

[0017] Optionally, the length of the process robot is less than the distance between the rotation connection point and any center ejector pin on both sides of the process robot.

[0018] Optionally, the length of the process robot is greater than the distance between the rotation connection point and the center of any adjacent processing station.

[0019] The present invention also provides a thin film deposition method, comprising the following steps:

[0020] S11, placing the substrate into the processing chamber;

[0021] S12, depositing a certain number of thin film layers on the substrate;

[0022] S13, multiple process robots rotate synchronously to transfer substrates between two adjacent processing stations;

[0023] S14, when the deposition of the substrate is completed at all processing stations, the substrate is taken out from the processing chamber and steps S11-S14 are repeated; otherwise, steps S12-S14 are repeated.

[0024] The present application also proposes a thin film deposition device, comprising: a substrate loading port for placing a substrate; a cache device for placing the substrate to be deposited; a front-end robot for transporting the substrate between the substrate loading port and the cache device; a thin film deposition device as described above, for performing thin film deposition on the substrate; and a transport robot for transporting the substrate between the cache device and the processing chamber of the thin film deposition device.

[0025] Optionally, a door is provided on a side wall of the processing chamber to allow the transport robot to enter the processing chamber to place or remove a substrate.

[0026] Optionally, there are multiple processing chambers, and the multiple processing chambers are symmetrically arranged on both sides of the transport robot or arranged in sequence on the periphery of the transport robot.

[0027] Optionally, the thin film deposition apparatus further includes a processing module for preheating or surface reduction of the substrate before deposition, or for modifying the surface of the thin film after deposition.

[0028] Optionally, there are multiple cache devices, and a transport robot is provided between two adjacent cache devices for transporting substrates between the two cache devices.

[0029] As described above, the present invention provides a thin film deposition device, a thin film deposition method and a thin film deposition equipment, which have the following beneficial effects: a substrate is transferred between multiple processing stations by a process robot, and the area near the center of the processing chamber on the substrate changes after the transfer, so that the thin films deposited at multiple processing stations can produce a compensation effect, so that the uniformity of the multi-layer thin films deposited on the substrate is improved, and the phenomenon that the etched through holes of the thin films deposited on the substrate deviate from the vertical direction during the subsequent etching process is avoided, thereby further ensuring the stability of the performance of the semiconductor device.

[0030] Summary of the Figures

[0031] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0032] FIG1 is a schematic diagram of a thin film deposition apparatus according to the present invention;

[0033] 2A to 2C are schematic diagrams showing different numbers of processing stations in the thin film deposition apparatus of the present invention;

[0034] 3A to 3C are schematic diagrams showing a process robot taking out a substrate in a thin film deposition apparatus according to the present invention;

[0035] 4A to 4C are schematic diagrams showing a process robot placing down a substrate in a thin film deposition apparatus according to the present invention;

[0036] FIG5 is a schematic diagram showing the motion trajectory of a process robot in a thin film deposition apparatus according to the present invention when transporting a substrate between two processing stations;

[0037] 6A to 6D are schematic diagrams showing a process robot in a thin film deposition apparatus of the present invention transporting multiple substrates between multiple processing stations;

[0038] 7A and 7B are schematic diagrams showing a substrate loaded in a thin film deposition apparatus according to the present invention;

[0039] 8A to 8C are schematic diagrams showing the arrangement of a thin film deposition apparatus according to the present invention.

[0040] Preferred embodiments of the present invention

[0041] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] It should be noted that the illustrations provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Although the illustrations only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation, the form, quantity, and proportion of each component in actual implementation may be varied arbitrarily, and the component layout may be more complex. Furthermore, parts with the same reference numerals in multiple figures represent identical or equivalent parts or components.

[0043] As shown in FIG1 , the present invention provides a thin film deposition apparatus comprising a centrally symmetrical processing chamber 1 for performing thin film deposition. The processing chamber 1 includes multiple sets of one-to-one corresponding processing stations 101 and process robots 201 . The multiple process robots 201 are positioned between two adjacent processing stations 101 and are used to transfer substrates w between the two adjacent processing stations 101 .

[0044] The processing chamber 1 can be shaped like a regular polygon, with the number of processing stations 101 and process robots 201 corresponding to the number of sides of the processing chamber 1. This means that there can be at least three processing stations 101 and, correspondingly, at least three process robots 201. In some embodiments, as shown in FIG1 , the processing chamber 1 is square with rounded corners for safety and process reasons. There are four processing stations 101 and four corresponding process robots 201. In other embodiments, referring to FIG2A through FIG2C , there are shown embodiments with three, five, and six processing stations 101, respectively.

[0045] Specifically, as shown in Figure 5, one end of the process robot 201 can be rotatably connected to the processing chamber 1, and the rotation connection point O is located on the median perpendicular plane of the line connecting the centers of the two adjacent processing stations 101. The process robot 201 can be directly set on the side wall of the processing chamber 1, or it can be set at the bottom or top of the processing chamber 1 through a connecting rod. In some embodiments, the rotation connection point O is always fixed relative to the processing chamber 1, and the rotation connection point O is higher than the position of the processing station 101. In other embodiments, the rotation connection point O can be raised and lowered relative to the processing chamber 1, and the rotation connection point O can be set at any height in the processing chamber 1. The initial position of each process robot 201 is the position in the middle of the corresponding two adjacent processing stations 101, that is, it is located on the median perpendicular plane of the line connecting the centers of the corresponding two adjacent processing stations 101.

[0046] FIG5 shows the motion trajectory of the process robot 201 between the two processing stations 101. The motion trajectory of the process robot 201 during the transportation process is an arc, and the center of the arc trajectory is the rotation connection point O between the process robot 201 and the processing chamber 1. In this embodiment, there are four processing stations 101. The rotation angle of the process robot 201 when transporting between two processing stations 101 can be 90° each time. The substrate w is deposited four times on the four processing stations 101 as one cycle. In this way, the substrate w rotates 360° after one cycle of thin film deposition, ensuring that a uniform thin film is deposited on the substrate w. In order to ensure the stability of the process robot 201 supporting the wafer, the length of the process robot 201 can cover more than the center of the heating tray 11 (such as point A and point B in FIG5).

[0047] In the embodiment shown in FIG1 , the processing chamber 1 includes four processing stations 101A, 101B, 101C, and 101D and four process robots 201A, 201B, 201C, and 201D. Based on the configuration of the processing stations 101 and the process robots 201, a variety of processing sequences are possible to enable thin film deposition cycles to be performed in parallel on multiple substrates w. FIG1 also illustrates the process of transferring a substrate w between the four processing stations 101A, 101B, 101C, and 101D.

[0048] 1 , the steps of performing thin film deposition on a substrate w in this embodiment are as follows:

[0049] S1: As shown in the upper left figure, substrate w is loaded into processing station 101A for the first thin film deposition. Then, process robot 201A moves from its initial position to processing station 101A and transports substrate w to processing station 101B for the second thin film deposition.

[0050] S2: As shown in the upper right figure, the process robot 201A returns to the initial position, and the process robot 201B moves from the initial position to the processing station 101B to transport the substrate w to the processing station 101C for the third thin film deposition;

[0051] S3: As shown in the lower right figure, the process robot 201B returns to the initial position, and the process robot 201C moves from the initial position to the processing station 101C to transport the substrate w to the processing station 101D for the fourth thin film deposition;

[0052] S4: As shown in the lower left figure, process robot 201C returns to its initial position. Simultaneously, process robot 201D moves from its initial position to processing station 101D, transfers substrate w to processing station 101A, and then returns to its initial position. This completes a full film deposition cycle, after which substrate w can be removed from processing chamber 1.

[0053] In other embodiments, the thin film deposition and substrate w transfer process can be adjusted according to actual process requirements. For example, multiple thin film depositions can be performed at each processing station 101 before being transferred to the next processing station 101. For example, in S4, after the substrate w undergoes thin film deposition at processing station 101D, it can be transferred to processing station 101A to perform thin film deposition cycles between multiple processing stations 101. After multiple cycles, the substrate w can be removed from the processing chamber 1.

[0054] During the thin film deposition cycle, the area of ​​substrate w near the center of processing chamber 1 changes as it is moved by process robot 201. For example, referring to FIG1 , as shown in the upper left figure, when substrate w is located at processing station 101A, the area near the center of processing chamber 1 is marked as sector area S. When process robot 201A moves substrate w from processing station 101A to processing station 101B, substrate w rotates along with process robot 201A, and accordingly, the area of ​​substrate w near the center of processing chamber 1 also changes. For example, in FIG1 , as shown in the upper right figure, when substrate w is located at processing station 101B, sector area S, which was marked when it was at processing station 101A, has rotated to a position away from the center of processing chamber 1. The thin film deposition device provided by the present invention transfers the substrate w between multiple processing stations 101 through the process robot 201. After the transfer, the area near the center of the processing chamber 1 on the substrate w changes, so that the thin films deposited at the multiple processing stations 101 can produce a compensation effect, thereby improving the uniformity of the multi-layer thin films deposited on the substrate w, avoiding the phenomenon that the etched through holes of the thin films deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device.

[0055] The angle at which the process robot 201 rotates between two adjacent processing stations 101 is the angle between the projection of the axis of the process robot 201 onto the plane containing the processing stations 101 and the line connecting the centers of the two adjacent processing stations 101. Preferably, the rotation angle of the process robot 201 between two adjacent processing stations 101 is 360° / N, where N is the number of processing stations 101 in the processing chamber 1. This allows for conserving internal space within the processing chamber 1, thereby reducing the volume of the processing chamber 1 and fully utilizing the internal space. Furthermore, when a substrate w is transferred between multiple processing stations 101, the area of ​​the substrate w originally near the center of the processing chamber 1 can be rotated to a position away from the center of the processing chamber 1, thereby ensuring uniformity in the multi-layer thin film deposited on the substrate w. In some embodiments, the rotation angle of the process robot 201 between two adjacent processing stations 101 can also be 360° / N±30°. For example, in the embodiment of four processing stations 101 shown in Figure 1, the rotation angle can be set to 80°, 100°, etc., and the length of the process robot 201 can be configured according to the rotation angle.

[0056] Each processing station 101 is equipped with a heating tray 11, a support and a lifting mechanism. The heating tray 11 is used to carry and heat the substrate w, the support is used to support the substrate w, and the lifting mechanism is connected to the support to drive the support to rise or fall in the vertical direction to lift the substrate w off the heating tray 11 or place the substrate w on the heating tray 11.

[0057] In some embodiments, the support member is typically a pin 12, and a through hole is provided on the heating tray 11, in which the pin 12 is disposed. There may be three pins 12, and accordingly, there are three through holes, which correspond one to one with the pins 12. Each through hole is equidistant from the edge of the heating tray 11 and may be distributed in the shape of a regular polygon to ensure the stability of the pin 12 when supporting the substrate w. For example, in Figures 5 and 7A, the three pins 12 are arranged in the shape of a regular triangle. Specifically, one of the three pins 12 is distributed on the line connecting the center of the processing station 101 and the center of the processing chamber 1. Accordingly, each of the four processing stations 101 has a pin 12 distributed on the line connecting the center of the processing station 101 and the center of the processing chamber 1.

[0058] In some embodiments, to avoid interference between the process robot 201 and the ejector pins 12 during handling, the process robot 201 must be limited in length. Specifically, as shown in FIG5 , two center ejector pins 12A are located in the processing stations 101 on either side of the process robot 201, respectively, on the line connecting the processing stations 101 and the center of the processing chamber 1. The process robot 201 needs to avoid these two center ejector pins 12A during handling, so its length is less than the distance between the rotational connection point O and these two center ejector pins 12A.

[0059] Figures 3A to 3C illustrate the process of the process robot 201 removing the substrate w. Referring to Figure 3A , in the initial state, the ejector pins 12 are below the surface of the heating tray 11, and the substrate w is on the heating tray 11. Referring to Figure 3B , the lifting mechanism drives the ejector pins 12 upward, extending from the surface of the heating tray 11, lifting the substrate w, and the process robot 201 moves below the substrate w. The movement of the process robot 201 and the ascent of the ejector pins 12 can occur simultaneously or sequentially. Referring to Figure 3C , the lifting mechanism drives the ejector pins 12 downward below the surface of the heating tray 11, allowing the substrate w to land on the process robot 201 for transport to the next processing station 101.

[0060] Figures 4A to 4C illustrate the process of the process robot 201 placing the substrate w. Referring to Figure 4A , the process robot 201 has already moved the substrate w to the next processing station 101. At this point, the ejector pins 12 are below the surface of the heating tray 11, and the process robot 201 is holding the substrate w. Referring to Figure 4B , the lifting mechanism drives the ejector pins 12 upward until they are above the process robot 201, allowing the substrate w to land on the ejector pins 12. Referring to Figure 4C , the process robot 201 moves out of the processing station 101, and the lifting mechanism drives the ejector pins 12 downward to below the surface of the heating tray 11, allowing the substrate w to land on the heating tray 11. The movement of the process robot 201 and the lowering of the ejector pins 12 can occur simultaneously or sequentially.

[0061] Figures 6A to 6D illustrate the process of a process robot 201 transporting multiple substrates w between multiple processing stations 101. This process will now be described with reference to Figures 3A-3C, 4A-4C, and 6A-6D. Figure 6A shows the initial state of each process robot 201 before transporting a substrate w. Each process robot 201 is positioned on the median perpendicular plane connecting the centers of two adjacent heating trays 11. The ejector pins 12 are below the surface of the heating trays 11, and the substrates w are on the heating trays 11. Figure 6B shows the process of a process robot 201 removing a substrate w. The ejector pins 12 are raised and above the process robot 201, lifting the substrates w. The process robot 201 moves below the substrates w, where the ejector pins 12 descend below the surface of the heating trays 11, and the substrates w land on the process robot 201. Referring to Figure 6C, each process robot 201 rotates simultaneously, transporting the substrates w to the next adjacent heating tray 11. The ejector pins 12 are raised and above the process robot 201, lifting the substrates w. 6D , each process robot 201 returns to its initial position, and the ejector pins 12 are lowered below the surface of the heating tray 11, so that the substrate w lands on the heating tray 11. In an embodiment where the process robot 201 can be raised and lowered relative to the processing chamber 1, when transferring a substrate w between multiple processing stations 101, the process robot 201 needs to be raised or lowered from its initial height to a position between the heating tray 11 and the ejector pins 12 to lift the substrate w. After the transfer is completed, the process robot 201 needs to be lowered or raised to its initial height.

[0062] As shown in Figures 8A to 8C, the present invention also proposes a thin film deposition device, including: a substrate loading port 100 for placing a substrate w; a cache device 200 for placing a substrate w to be deposited; a front-end robot 300 for transferring the substrate w between the substrate loading port 100 and the cache device 200; the thin film deposition device in the above embodiment, for performing thin film deposition on the substrate w; and a transport robot 400 for transporting the substrate w between the cache device 200 and the processing chamber 1 of the thin film deposition device.

[0063] Specifically, the front-end robot 300 takes out the substrate w to be deposited from the substrate loading port 100 and places it on the cache device 200; the transport robot 400 takes out the substrate w from the cache device 200, places it in the processing chamber 1 of the thin film deposition device, and performs thin film deposition on the surface of the substrate w; after the thin film deposition is completed, the transport robot 400 takes out the substrate w from the processing chamber 1 and places it on the cache device 200; the front-end robot 300 takes out the substrate w from the cache device 200 and puts it back to the substrate loading port 100, completing the process operation of the thin film deposition equipment.

[0064] The processing chamber 1 has a door disposed on its sidewall to allow a transport robot 400 to enter the processing chamber 1 and place or remove the substrate w before or after the thin film deposition process on the substrate w. As shown in Figures 7A and 7B, the processing chamber 1 may have one or two doors 13 disposed on its sidewall. The number of transport robots 400 may correspond to the number of doors 13. That is, a processing chamber 1 with a single exit may have one transport robot 400 disposed therein, while a processing chamber 1 with dual exits may have two transport robots 400 disposed therein.

[0065] In some embodiments, as shown in FIG. 8A and FIG. 8B , the thin film deposition apparatus may include a plurality of processing chambers 1 , and the plurality of processing chambers 1 are sequentially arranged around the periphery of the transfer robot 400 .

[0066] 8A , the thin film deposition apparatus may further include a processing module 500 for preheating or surface reduction of the substrate w before deposition, or for modifying the surface of the thin film after deposition.

[0067] Based on the overall operating speed of the equipment, the thin film deposition equipment can optionally be equipped with multiple buffer devices 200. Accordingly, more transfer robots 400 and processing chambers 1 can also be provided. As shown in Figure 8C, the thin film deposition equipment is equipped with two buffer devices 200. A transfer robot 400 is located between the two buffer devices 200 to transfer substrates w between the two buffer devices 200. Two processing chambers 1 are also located on both sides of the transfer robot 400. The transfer robot 400 can enter the processing chamber 1 to place or remove substrates w.

[0068] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A thin film deposition apparatus, comprising a processing chamber, characterized in that: The processing chamber comprises: N processing stations distributed in a regular polygonal shape for thin film deposition; wherein N ≥ 3; N process robots are respectively arranged between two adjacent processing stations for transferring substrates between two adjacent processing stations; one end of each process robot is rotatably connected to the processing chamber, and the rotation connection point is located on the mid-vertical plane of the line connecting the centers of the two adjacent processing stations.

2. The thin film deposition device according to claim 1, characterized in that: The rotation angle of the process robot between two adjacent processing stations is 360° / N.

3. The thin film deposition device according to claim 1, characterized in that: The processing station comprises: A heating tray for carrying and heating the substrate; A support member, which is inserted into the heating tray and is used to support the substrate; The lifting mechanism is used to drive the support member to rise or fall, so as to lift the substrate away from the heating tray or the process robot, or to place the substrate on the heating tray or the process robot.

4. The thin film deposition device according to claim 1, characterized in that: The pivot point is fixed relative to the process chamber and is located above the process station.

5. The thin film deposition device according to claim 1, characterized in that: The rotation connection point can be raised and lowered relative to the processing chamber, and the rotation connection point is set at any height in the processing chamber.

6. The thin film deposition device according to claim 1, characterized in that: The number of the processing stations and the number of the process robots are both four.

7. The thin film deposition device according to claim 3, characterized in that: The support member includes an ejector pin, a through hole is formed on the heating tray, and the ejector pin is arranged in the through hole.

8. The thin film deposition device according to claim 7, characterized in that: There are three ejector pins and three through holes, which correspond to the ejector pins one by one.

9. The thin film deposition device according to claim 8, characterized in that: The distances between each through hole and the edge of the heating tray are equal, the ejector pins are arranged in an equilateral triangle, and one of the ejector pins is a central ejector pin, which is distributed on a line connecting the center of the processing station and the center of the processing chamber.

10. The thin film deposition device according to claim 9, characterized in that: The length of the process robot is smaller than the distance between the rotation connection point and any center ejector pin on both sides of the process robot.

11. The thin film deposition device according to claim 10, characterized in that: The length of the process robot is greater than the distance between the rotation connection point and the center of any adjacent processing station.

12. A thin film deposition method, characterized in that: The following steps are involved: S11, placing the substrate into the processing chamber; S12, depositing a certain number of thin films on the substrate; S13, multiple process robots rotate synchronously to transfer substrates between two adjacent processing stations respectively; S14, when the deposition of the substrate in all the processing stations is completed, the substrate is taken out from the processing chamber and steps S11-S14 are repeated; otherwise, steps S12-S14 are repeated.

13. A thin film deposition device, characterized in that: include: a substrate loading port for placing a substrate; A buffer device for placing substrates to be deposited; a front-end robot for carrying substrates between the substrate loading port and the buffer device; The thin film deposition device according to any one of claims 1 to 11, used for performing thin film deposition on a substrate; A transport robot is used to transport a substrate between the cache device and a processing chamber of the thin film deposition device.

14. The thin film deposition device according to claim 13, characterized in that: A door is arranged on the side wall of the processing chamber to allow the transport robot to enter the processing chamber to place or take out a substrate.

15. The thin film deposition device according to claim 13, characterized in that: There are multiple processing chambers, and the multiple processing chambers are symmetrically arranged on both sides of the transport robot or sequentially arranged on the periphery of the transport robot.

16. The thin film deposition device according to claim 13, characterized in that: The invention also comprises a processing module for preheating or surface reduction of the substrate before deposition, or for modifying the surface of the thin film after deposition.

17. The thin film deposition device according to claim 13, characterized in that: There are multiple cache devices, and a transport robot is provided between two adjacent cache devices for transporting substrates between the two cache devices.

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