OPTICAL APERTURES FOR InGaN VCSEL

Abstract

A vertical cavity surface emitting laser (VCSEL) component is provided including an emitting layer configured to emit an electromagnetic radiation, and an optical layer structure on or above the emitting layer. The optical layer structure may include a first region and a second region laterally adjacent to the first region. The first region may be configured to include a first optical path length and the second region may be configured to include a second optical path length. The second path length may be larger than the first path length. The second region corresponds to a region of the VCSEL component emitting electromagnetic radiation to an environment of the VCSEL component.

Description

[0001] 2023P00861 P93630- 1 – OPTICAL APERTURES FOR InGaN VCSEL Description This disclosure generally relates to vertical cavity surface emitting laser, VCSEL, components.FIG.1A and FIG.1B illustrate schematic cross-sectional viewsof comparative VCSEL components 10, 20. Here, a light emitting active region 2 is arranged between a p-type semiconductor layer 3 and a n-type semiconductor layer 1. A transparent electrode 6, e.g. formed of indium tin oxide (ITO), is formed above the emitting layer 2 to contact the p- type semiconductor layer 3. A distributed Bragg reflector (DBR) 7 is formed on the transparent electrode 6, and a mirror coating 8, e.g. a gold layer, is formed on the transparent electrode layer 6 and the DBR 7. Light emitted from the light emitting active region 2 is reflected by the DBR 7 and the mirror coating 8, and emitted through the n- type semiconductor layer 1 in to the environment of the VCSEL component 10, 20. In the VCSEL component 10, 20 there is a current aperture and an optical confinement. In GaAs-VCSELs 10, as illustrated in FIG.1A, this is realized as an oxidation layer 4 that fulfills the function of the current aperture and optical confinement. In InGaN-VCSELs, as illustrated in FIG.1B, e.g. emitting a blue light, this is usually realized by etching an aperture 5 and passivating the aperture, e.g. with SiO2. Here, the passivation results in a current aperture and optical confinement as the passivated portion (also denoted as cladding or cladding structure) is non-conductive and has a lower refractive index than the non-passivated portion (also denoted as core, core structure or aperture). Thus, the passivation 4, e.g. the SiO2, lowers the effective (“average”) refractive index outside the core (aperture). The passivation 4 provides a waveguiding of light from the2023P00861 P93630- 2 – emitting layer of the VCSEL, and thus allows a higher single- mode aperture diameter. Further, GaN passivation can be provided without a SiO2 isolation layer 4, as illustrated in FIG.1B, which results in a current aperture 9 but does not provide any optical confinement. Thus, with this approach, no optical waveguiding and optical mode confinement can be achieved and the aperture diameter determines the power if single mode is required in an application. It is an objective of the invention to provide a VCSEL component having an improved aperture that is easier to manufacture. In one aspect, a VCSEL component is provided including an emitting layer configured to emit an electromagnetic radiation, and an optical layer structure on or above the emitting layer. The optical layer structure may include a first region and a second region laterally adjacent to the first region. The first region may be configured to include a first optical path length and the second region may be configured to include a second optical path length. The second path length may be larger than the first path length. The second region corresponds to a region of the VCSEL component emitting electromagnetic radiation to an environment of the VCSEL component. This way, the optical confinement can be functionally separated from the electrical current aperture. In another aspect, a method to manufacture a VCSEL component is provided. The method including: forming an emitting layer configured to emit an electromagnetic radiation, forming an optical layer structure on or above the emitting layer. The optical layer structure may be formed having a first region and a second region laterally adjacent to the first region. The first region may be formed to include a first optical2023P00861 P93630- 3 – path length and the second region may be formed to include a second optical path length. The second path length may be larger than the first path length. The second region corresponds to a region of the VCSEL component emitting electromagnetic radiation to an environment of the VCSEL component. This way, the optical confinement can be functionally separated from the electrical current aperture. In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various aspects of the invention are described with reference to the following drawings, in which: FIG.1A to FIG.1B show schematic cross-sectional views of comparative VCSEL components;FIG.2 shows a schematic cross-sectional view ofa VCSEL component; FIG.3A to FIG.3B show schematic cross-sectional views of a VCSEL component;FIG.4 shows a schematic cross-sectional view ofa VCSEL component; FIG.5A to FIG.5B show schematic cross-sectional views of a VCSEL component;FIG.6 shows a schematic cross-sectional view ofa VCSEL component;FIG.7 shows a diagram illustrating the opticalproperties of a VCSEL component;2023P00861 P93630- 4 – FIG.8A to FIG.8B show schematic cross-sectional views of a VCSEL component;FIG.8C shows a diagram illustrating the opticalproperties of the VCSEL component of FIG.8A and FIG.8B; FIG.9A to FIG.9F show schematic cross-sectional views of a VCSEL component; FIG.10A to FIG.10F show schematic cross-sectional views of a VCSEL component; FIG.11A to FIG.11C show schematic cross-sectional views of a VCSEL component; FIG.12A to FIG.12C show schematic cross-sectional views of a VCSEL component; and FIG.13A to FIG.13C show schematic cross-sectional views of a VCSEL component. The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and aspects in which the disclosure may be practiced. One or more aspects are described in sufficient detail to enable those skilled in the art to practice the disclosure. Other aspects may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the disclosure. The various aspects described herein are not necessarily mutually exclusive, as some aspects can be combined with one or more other aspects to form new aspects. Various aspects are described in connection with methods and various aspects are described in connection with devices. However, it may be understood that aspects described in connection with methods may similarly apply to the devices, and vice versa. Throughout the drawings, it should2023P00861 P93630- 5 – be noted that like reference numbers are used to depict the same or similar elements, features, and structures. Throughout the drawings, it should be noted that proportions are not necessary to scale and that the size of features may be emphasized for ease of illustration. The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any example or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other examples or designs. The words “plurality” and “multiple” in the description or the claims expressly refer to a quantity greater than one. The terms “group (of)”, “set [of]”, “collection (of)”, “series (of)”, “sequence (of)”, “grouping (of)”, etc., and the like in the description or in the claims refer to a quantity equal to or greater than one, i.e. one or more. Any term expressed in plural form that does not expressly state “plurality” or “multiple” likewise refers to a quantity equal to or greater than one. The term “connected” can be understood in the sense of a (e.g. mechanical, optical and / or electrical), e.g. direct or indirect, connection and / or interaction. For example, several elements can be connected together mechanically such that they are physically retained (e.g., a plug connected to a socket) and electrically such that they have an electrically conductive path (e.g., signal paths exist along a communicative chain). FIG.2 shows a schematic cross-sectional view of a VCSEL component 100. Here, a light emitting active region 112 may be arranged between a p-type semiconductor layer 114 and a n- type semiconductor layer 110. A transparent electrode 112, e.g. formed of indium tin oxide (ITO), may be formed above the emitting layer 112 to contact the n-type semiconductor layer 110. A first distributed Bragg reflector (DBR) 118 may2023P00861 P93630- 6 – be formed on the transparent electrode 112, and a first mirror coating 106, e.g. a gold layer, may be formed on the transparent electrode layer 108 and the first DBR 118. A current aperture 134 may be formed by a passivation 132 in or on the transparent electrode layer 108. The first mirror coating 106 may be arranged on a substrate 104, e.g. a semiconductor substrate. An electrical contact layer 104 may be formed on the opposite side, e.g. at an exposed surface, of the substrate 104. A second distributed Bragg reflector (DBR) 120 may be formed on the p-type semiconductor layer 114, and a second mirror coating 106, e.g. a gold layer, may be formed on the p-type semiconductor layer 114 and the second DBR 118. Light emitted from the light emitting active region 112 is reflected by the first DBR 118 and the first mirror coating 106, and emitted through the second DBR 120 in to the environment of the VCSEL component 100 (in FIG.2 illustrated by the arrow 128). The second DBR 120 may be formed having a first region 122 and a second region 124. The second DBR 120 may have a different optical path length in the first region 124 than in the second region 122. The optical path length may be adjusted by an adaptation structure 126, e.g. a structured layer 126, arranged in the second region of the second DBR 120, e.g. configured to form an optical confinement by any of a thickness of the layer 126, a shape of surface of the layer and a composition of the layer 126. The first region 122 and the second region 124 may form an optical confinement for the light emitted by the emitting layer 112. Illustratively, the optical confinement caused by different refractive indices of the first region 122 (cladding) vs the second region 124 (sore) may be generated by step-functional modified layers of the second DBR 120. The optical2023P00861 P93630- 7 – confinement allows an optimization of the current aperture independent from the optical confinement. The optical confinement is easy to realize. For example, each of the layers of the VCSEL may have an all planar design except one DBR layer. The VCSEL component may be formed by a planar ITO deposition as first step after forming epitactical (epi) layers (e.g. semiconductor layers 110, 112, 114). Hence, the VCSEL component may be formed without the need of a reactive ion etching (RIE) in a p-GaN layer of the VCSEL for forming the optical confinement. The optical confinement may be generated by adding a step function in one of the layers of a DBR of the VCSEL. In a thin-film approach, the respective DBR can be at p-side or / and n-side, e.g. any one of the first DBR 118 and the second DBR 120. In the following, an exemplary VCSEL the optical confinement is formed as part of the DBR at the n-side of the epi layers. All illustrated examples may have GaN epi layers forming at least a part of an optical cavity 302 and a DBR 304 having a layer stack of SiO2 and Nb2O5 layers. However, the illustrated examples are also applicable to other DBR structures and / or materials as well.FIG.3A to FIG.3B show a schematic cross-sectional views of aVCSEL component. The VCSEL component 300 is illustrated as DBR 304 arranged on or above an optical cavity 302. The optical cavity 302 can include one or more layers described in FIG.2A and FIG.2B on which the second DBR 120 is formed.FIG.3A further illustrates the intensity ½E½2 of a standingwave of light emitted by the emitting layer 112 (see FIG.2A and FIG.2B). Note that the emitting layer may be part of the cavity 302 or that the cavity 302 may be arranged on or above the emitting layer.2023P00861 P93630- 8 – Further note that the VCSEL component 300 includes an adaptation structure 306. The adaptation structure 306 may be a thin, intermediate layer described above forming a lateral optical confinement in the VCSEL component 300. The adaptation structure may be arranged at a side of the DBR 304 near the cavity 302, e.g. at an interface of the DBR 304 corresponding to a higher or highest intensity of the light, as illustrated in FIG.3A. The adaptation structure 306 may have a circular or elliptical shape viewed in top view. Thus, the optical confinement formed by the first region and the second region of the DBR 304 (see FIG.2) may form an optical aperture. Note, an elliptical aperture may allow a definition and fixing of polarization of light emitted by the VCSEL. The layer between the adaptation structure 306 and the cavity 302 may be a layer of the DBR 304, e.g. a NbO layer, or may be a part of the cavity 302, e.g. a GaN layer. The cavity 302 may be formed of one or more layers including or formed from GaN having a refractive index of about 2.48. The DBR 304 may be a layer stack of alternating layers of one or more layers having a high refractive index and low refractive index, e.g. one or more first layers including or formed from NbO (darker layer) having a refractive index of about 2.42 and one or more second layers including or formed from SiO2 (lighter layer) having a refractive index of about 1.5. The adaptation structure 306 may be formed or having a material having a refractive index larger than the refractive index at the side facing the cavity 302. For example, the adaptation structure 306 may be formed of or includes any one of NbO, TiO, TaO, HfO, SiN, AlO or any combination thereof.2023P00861 P93630- 9 – FIG.3B shows the structure of FIG.3A having an etched surface of the DBR 304, e.g. etched corresponding to the shape of the adaptation structure 306, e.g. in top view.FIG.4 shows a schematic cross-sectional view of a VCSELcomponent illustrated in FIG.3A. Here, the adaptation structure 402 is formed as a small step. In thin film design, the adaptation structure 402 can be formed on the n-side where no p++ semiconductor layer or transparent electrode layer, e.g. indium tin oxide (ITO) is present. Here, the DBR can be easily etched as illustrated in FIG.3B. The steps or depths of the adaptation structure 402 may be in the range of less than about 20 nm, e.g. less than about 5 nm. Note that a change of layer thickness of one of the first or last layers of the DBR in a range of about a few nm may have no significant impact on the total reflectivity performance of the DBR. Thus, etching into the cavity 302 or structuring the first dielectric layer of the DBR 304 can be overformed after a few dozen nm. As a result, quasi-planar (DBR) layers depending on deposition technology and thickness of this small step-like layer of the adaptation structure 402 may be formed on the adaptation structure 402.FIG.5A to FIG.5B show a schematic cross-sectional views of aVCSEL component. Here, the adaptation structure 502 may be formed directly between the cavity 302 and the DBR 304. As discussed above, the optical confinement forming the aperture may be on one position either per design or simply as the thicker layers on top of the adaptation structure 502 overform and smoothen the surface of the adaptation structure 502. Thus, an adaptation structure 502 may form an elliptical aperture in the DBR that may provide a definition and fixing of polarization of light emitted by the VCSEL. The aperture in the DBR may be formed by etching of the aperture 504 from the DBR end, as illustrated in FIG.5B.2023P00861 P93630- 10 – FIG.6 shows a schematic cross-sectional view of a VCSEL component. As illustrated in FIG.6, to form the optical confinement using the adaptation structure 602, the position of the adaptation structure 602 relative to the intensity ½E½2, e.g. the electromagnetic field strength at the position of the adaptation structure, may be of importance. Note thata maximum of ½E½2 in the DBR 304 may be on a position 602corresponding to a transition from a layer of the DBR of high refractive index to a layer of the DBR of low refractive index. Thus, when the adaptation structure is arranged at a position 602 close to the DBR 304, the adaptation structure may have a maximum impact in forming the optical confinement leading to optical guiding. A position 606 of the adaptation structure farther away from the cavity 302 may have less impact for forming the opticalaperture as the E-field ½E½2 may decrease rapidly inside theDBR 304, as illustrated in FIG.6.Note that a minimum of ½E½2 in the DBR 304 may be on aposition 604 corresponding to a transition from a layer of the DBR of low refractive index to a layer of the DBR of low refractive index. An adaptation structure arranged at a position 604 of minimum E-field may have minimum impact and may lead to anti-guiding. Thus, the VCSEL having an adaptation structure arranged at a position 602 of maximum E- Field may have an optical confinement.FIG.7 shows a diagram illustrating a numerical simulation oflongitudinal mode (intensity 704) and refractive index 702 of the VCSEL component 300 regarding the vertical position 706 in the VCSEL component 300. Illustrated is the normalized intensity 708 of the longitudinal mode at 450 nm for a 10λ-cavity InGaN VCSEL component 300. The cavity may be designed such that the multiple quantum wells (MQWs) are at the maximum of the electric field.2023P00861 P93630- 11 – Further illustrated is the refractive index 712 of the cladding layers, e.g. the first region of the DBR (see FIG.2). Further illustrated is the refractive index 710 of the core layers, e.g. the second region of the DBR (see FIG.2). FIG.8A shows a cross-sectional side view of a comparativeVCSEL component, FIG.8B shows a cross-sectional top view ofthe comparative VCSEL component, and FIG.8C shows a diagram illustrating a numerical simulation of the VCSEL component illustrated in FIG.8A. Note that the comparative VCSEL component is substantially configured as described before. However, in this comparative example, an adaptation structure 802 is arranged in the first region 122 of the DBR 304 and not in the second region 124 as described before. FIG.8B illustrates the adaptation structure 802 in top view. The adaptation structure 802 could be formed of a relatively low refractive index material, e.g. any one of SiOx, SiN, AlOx. In this comparative example, the adaptation structure 802 may not result in a desired optical confinement since a wrong aperture is on a wrong position as becomes apparent from FIG.8C.FIG.9A shows a cross-sectional side view and FIG.9B shows across-sectional top view of the VCSEL component having anadaptation structure arranged in the DBR. FIG.9C shows across-sectional side view and FIG.9D shows a cross-sectionaltop view of the VCSEL component having an adaptation structure arranged outside the DBR. FIG.9E shows a cross-sectional side view and FIG.9F shows a cross-sectional topview of the VCSEL component having an adaptation structure arranged outside the DBR.2023P00861 P93630- 12 – The adaptation structure may be arranged within the DBR 304, as illustrated in FIG.9A and FIG.9B. Alternatively, or in addition, the adaptation structure may be arranged at least in part outside the DBR 304, as illustrated in FIG.9C and FIG.9F. In principle, the adaptation structure 902, 904, 906 could be positioned at any position along the vertical direction of the DBR, e.g. as long as other layers have a flat surface and / or the position of the adaptation structure 902, 904, 906 does not correspond to a node of the E-Field, as described above. The adaptation structure 904 in the cladding may be formed of a lower refractive index material, e.g. SiOx, SiN, AlOx, or any combination thereof. The adaptation structure 902, 906 in the core may be formed of a lower refractive index material, e.g. NbO, TiO, TaO, HfO, SiN, AlOx or any combination thereof.FIG.10A shows a cross-sectional side view and FIG.10B shows across-sectional top view of the VCSEL component having anadaptation structure arranged in the DBR. FIG.10C shows across-sectional side view and FIG.10D shows a cross-sectionaltop view of the VCSEL component having an adaptation structure arranged outside the DBR. FIG.10E shows a cross-sectional side view and FIG.10F shows a cross-sectional topview of the VCSEL component having an adaptation structure arranged outside the DBR. Here, in comparison to the VCSEL component illustrated in FIG.9C to FIG.9D, when the adaption structure is formed by a cladding structure and the layers above the adaptation structure are not planar, the cavity is no longer flat but the structure will be imprinted on subsequent layers. This may cause severe anti-guiding for light emitted by the emitting layer.2023P00861 P93630- 13 – Further, in comparison to the VCSEL component illustrated in FIG.9E to FIG.9F, when the adaptation structure is formed by a core structure and the layers above the adaptation structure are not planar, the adaptation structure can result independently from the aperture location, e.g. within the DBR (FIG.10A and FIG.10B) or vertically outside the DBE (FIG.10E and FIG.10F), in an optical confinement. Thus, an aperture location as core structure can result in a strong wave guiding independent where original aperture is located. Note that FIG.10E also illustrates an exemplary deposition direction 1008 for the layers of the VCSEL component 300. Using the exemplary results discussed above, an effective refractive index can be determined for the core structure as: and for the cladding structure as: Thus, an refractive index difference between core structure and cladding structure can be determined as: Thus, adaptation structure resulting in the shape of step- functional modified Bragg layers in the n-side of the VCSEL component can result in an optical confinement. Alternatively, or in addition, the adaptation structure can be formed at the side of the transparent electrode layer, e.g. ITO, as illustrated in FIG.11A to FIG.13C, e.g. the side of the first DBR (see also FIG.2).2023P00861 P93630- 14 – FIG.11A to FIG.11C show schematic cross-sectional views of exemplary VCSEL component wherein the transparent electrode layer 1102 may have thickness of e.g. l / 4 of a layer of the DBR. Here, the cavity 302 may be for example GaN having a refractive index of about 2.48, the DBR may include first layers, e.g. formed from NbO having a refractive index of about 2.42 (high index DBR layer), and second layers, e.g. formed from SiO2 having a refractive index of about 1.5 (low index DBR layer) (see also FIG.3) The cavity may have an etched portion 1104 in the cladding portion between the transparent electrode layer 1102 and the cavity 302. This may have a minimum impact on the opticalproperties if this interface at node of the E-Field ½E½2.The etched portion 1104 may also be passivated by a passivation layer 1106 forming a current aperture. Here, a low index DBR layer is formed in contact with the transparent electrode layer 1102. The step-like adaptation structure may be realized in the transparent electrode layer 1102. The step 1110 may be transferred as step 1108 in subsequent dielectric layers of the DBR and may result in more or less planar surfaces. Exemplary, in the example illustrated in FIG.11A, the step from the optical cavity 302 is replicated in the layers above; in the example illustrated in FIG.11B, the optical cavity 302 has a flat top and the steps may be realized in the top of the transparent electrode layer 1102 only; and in the example illustrated in FIG. 11C the step is only realized in one of the above DBR layers, e.g. in the high refractive index layer.2023P00861 P93630- 15 – FIG.12A to FIG.12C show schematic cross-sectional views of exemplary VCSEL component wherein the transparent electrode layer 1102 may have thickness that is smaller than in the examples illustrated in FIG.11A to FIG.11C. Here, a high index DBR layer is formed in contact with the transparent electrode layer 1102. An adaptation structure, as described above, is formed at a transition from the high index DBR layer (e.g. in contact with the transparent electrode layer 1102) to a subsequent low index DBR layer. However, a position of the high index DBR layer in contact with the transparent electrode layer may not be optimal as this may result in anti-guiding, except the high DBR layer in contact with transparent electrode layer 1102, e.g. formed from SiN, has a refractive index comparable to the refractive index of ITO. An adaptation structure 1206 may be formed at position corresponding to a maximal E-Field resulting in desired guiding and optical confinement. Further, due to the etched portion 1104, a step-like adaptation structure is realized in the transparent electrode layer 1102 and subsequent dielectric layers are having substantially planar surfaces, as illustrated in FIG.12B. Alternatively, as illustrated in FIG.12C, the step may also be present in subsequent layers of the DBR. Note the adaption structure 1206 may be the first layer on top of the transparent electrode layer 1102. In the example illustrated in FIG.12A the step from the optical cavity 302 may be replicated in the layer layers above, whereas in the examples illustrated in Fig. 12B, the optical cavity 302 has a flat top and the steps are realized in the layer on top of transparent electrode layer 1102 only, e.g. a high refractive index layer. In the example illustrated in FIG. 12C, the2023P00861 P93630- 16 – steps may be realized in all above layers, the adaption layer and the above DBR layers. FIG.13A to FIG.13C show schematic cross-sectional views of exemplary VCSEL component wherein the transparent electrode layer 1102 may have thickness that is comparable to thickness of the examples illustrated in FIG.12A to FIG.12C. However, a thicker low index DBR layer is formed in direct contact with the thin transparent electrode layer. Thus, corresponding to the examples illustrated in FIG.12A to FIG.12C, an optical confinement can be formed in the DBR. Here, the adaption structure 1206 may be formed of a low refractive index material, e.g. having a refractive index lower than the refractive index of the transparent electrode layer 1102. The adaption structure 1206 may be the first layer on top of transparent electrode layer 1102. In FIG.13A the step from the optical cavity 302 may be replicated in the DBR, layers above (except in the adaption structure 1206 and the transparent electrode layer 1102), whereas in the example illustrated in FIG.13B, the step may be realized only in the first high refractive DBR layer. Thus, in the example illustrated in FIG.13C, the steps may start with the first high refractive index DBR layer and may be followed by the following layers as well. In other words, referring to FIG.2 to FIG.13C, the vertical cavity surface emitting laser, VCSEL, component may include an emitting layer configured to emit an electromagnetic radiation, and an optical layer structure on or above the emitting layer. The optical layer structure may include a first region and a second region laterally adjacent to the first region. The first region may be configured to include a first optical path length and the second region may be configured to include a second optical path length. The second path length may be larger than the first path length.2023P00861 P93630- 17 – The first regions may be formed to laterally surround the second region. The first region and the second region may be configured as aperture of the VCSEL component. The optical layer structure may include a distributed Bragg mirror, DBR, structure on or above the emitting layer. The DBR structure may include the first region and the second region. Alternatively, or in addition, the optical layer structure may include an optical cavity layer on or above the emitting layer, on or an optical cavity layer and the DBR structure may be arranged on the optical cavity layer. As an example, the optical cavity layer may include the first region and the second region, and the DBR structure may be formed having about the same thickness on or above the first region and the second region of the optical cavity layer. For example, the DBR structure may include a layer having a first thickness in the first region and a second thickness in the second region. The second thickness may be larger than the first thickness. The layer may be formed at the side of the DBR structure facing the emitting layer. The position of the layer may correspond to a transition regarding the emitting layer from a layer of the DBR structure having a high refractive index to a layer of the DBR structure having a low refractive index. For example, the layer may be arranged at a position of a maximum intensity of the electromagnetic radiation emitted by the emitting layer propagating along the optical path. Alternatively, or in addition, the DBR structure may include an adaptation layer formed in the first region forming the difference between the first path length and the second path length. The position of the adaptation layer may correspond to a transition regarding the emitting layer from a layer of2023P00861 P93630- 18 – the DBR structure having a high refractive index to a layer of the DBR structure having a low refractive index. The adaptation layer may be formed at the side of the DBR structure facing the emitting layer. The adaptation layer may be arranged at a position of a maximum intensity of the electromagnetic radiation emitted by the emitting layer propagating along the optical path. The second region may be free of adaptation layer. The adaptation layer may be formed in a circular shape. Alternatively, or in addition, the DBR structure may include a plurality of layers, wherein one of the plurality of layers may include a first thickness in the first region and a second thickness in the second region. The second thickness may be larger than the first thickness. The emitting layer and the DBR structure may be formed on a shared substrate. The shared substrate may be formed or may include a semiconductor material. Alternatively, or in addition, the optical layer structure may include a transparent electrode layer. The emitting layer may be formed on or above the transparent electrode layer. The transparent electrode layer may include the first region and the second region. In the first region, the transparent electrode layer may include a first thickness and, in the second region, the transparent electrode layer may include a second thickness. The second thickness may be larger than the first thickness. The transparent electrode layer may be arranged at a position of a maximum intensity of the electromagnetic radiation emitted by the emitting layer propagating along the optical path. Alternatively, or in addition, the DBR structure may include an adaptation layer formed in the first region such that layers of the DBR structure above the adaptation layer have about a planar surface in the first region and the second region.2023P00861 P93630- 19 – Alternatively, or in addition, the optical layer structure further including a non-conductive aperture structure formed at least in the second region. The first region may be free of the non-conductive aperture structure. A method for manufacturing a VCSEL component may include forming an emitting layer configured to emit an electromagnetic radiation, forming an optical layer structure on or above the emitting layer. The optical layer structure may be formed having a first region and a second region laterally adjacent to the first region. The first region may be formed to include a first optical path length and the second region may be formed to include a second optical path length. The second path length may be larger than the first path length. In the following, some examples are described which relate to what is described and shown in the figures. Example 1 is a vertical cavity surface emitting laser, VCSEL, component including: an emitting layer configured to emit an electromagnetic radiation, an optical layer structure on or above the emitting layer, wherein the optical layer structure includes a first region and a second region laterally adjacent to the first region, wherein the first region is configured to include a first optical path length and the second region is configured to include a second optical path length, wherein the second path length is larger than the first path length, and wherein the second region corresponds to a region of the VCSEL component emitting electromagnetic radiation to an environment of the VCSEL component. In Example 2, the subject matter of Example 1 can optionally include that the first region is formed to laterally surround the second region.2023P00861 P93630- 20 – In Example 3, the subject matter of Example 1 or 2 can optionally include that the first region and the second region are configured as an optical aperture of the VCSEL component. In Example 4, the subject matter of any one of Examples 1 to 3 can optionally include that the optical layer structure includes a distributed Bragg mirror, DBR, structure on or above the emitting layer, and that the DBR structure includes the first region and the second region. In Example 5, the subject matter of Example 4 can optionally include that the DBR structure includes an adaptation layer having a first thickness in the first region and a second thickness in the second region, wherein the second thickness is larger than the first thickness. In Example 6, the subject matter of Example 5 can optionally include that the first region is free of the adaptation layer. In Example 7, the subject matter of any one of Examples 4 to 6 can optionally include that the position of the adaptation layer corresponds to a transition regarding the emitting layer from a layer of the DBR structure having a high refractive index to a layer of the DBR structure having a low refractive index. In Example 8, the subject matter of any one of Examples 1 to 7 can optionally include that the optical layer structure includes a transparent electrode layer, wherein the emitting layer is formed on or above the transparent electrode layer; wherein the transparent electrode layer includes the first region and the second region, wherein, in the first region, the transparent electrode layer includes a first thickness and, in the second region, includes a second thickness, wherein the second thickness is larger than the first thickness.2023P00861 P93630- 21 – In Example 9, the subject matter of any one of Examples 1 to 8 can optionally further include a non-conductive aperture structure formed at least in the first region, and wherein the second region is substantially of the non-conductive aperture structure. Example 10 is a method for manufacturing a vertical cavity surface emitting laser, VCSEL, component, the method including: forming an emitting layer configured to emit an electromagnetic radiation, forming an optical layer structure on or above the emitting layer, wherein the optical layer structure is formed having a first region and a second region laterally adjacent to the first region, wherein the first region is formed to include a first optical path length and the second region is formed to include a second optical path length, wherein the second path length is larger than the first path length. The method can further include any one of the features described for the VCSEL component. While the above descriptions and connected figures may depict optical device components as separate elements, skilled persons will appreciate the various possibilities to combine or integrate discrete optical functions into a single element. Such may include combining two or more components from a single component. Conversely, skilled persons will recognize the possibility to separate a single element into two or more discrete elements, such as splitting a single component into two or more separate component. It is appreciated that implementations of methods detailed herein are exemplary in nature, and are thus understood as capable of being implemented in a corresponding device. Likewise, it is appreciated that implementations of devices detailed herein are understood as capable of being implemented as a corresponding method. It is thus understood that a device corresponding to a method detailed herein may2023P00861 P93630- 22 – include one or more components configured to perform each aspect of the related method. All acronyms defined in the above description additionally hold in all claims included herein. While the disclosure has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims. The scope of the disclosure is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.

[0002] 2023P00861 P93630- 23 – Reference Numeral List10, 20 VCSEL1, 3 semiconductor layer2 emitting layer4 passivation5 aperture6 transparent electrode7 DBR8 reflective metal layer100 VCSEL 102 contact layer 104 substrate 106, 116 reflective metal layer 108 transparent electrode110, 114 semiconductor layer112 emitting layer 118, 120 DBR 122 first region (cladding structure) 124 second region (core structure) 126 adaptation structure 128 light emission 132 passivation 134 current aperture 300 VCSEL component 302 cavity 304 DBR 306, 402, 502 adaptation structure 308, 504 etched structure 320 structured VCSEL component 330 first layer(s) of DBR (low index) 340 second layer(s) of DBR (high index) 602, 604, 606 interface positions 700 numerical simulation 702 reflective index 704 normalized intensity2023P00861 P93630- 24 – 706 vertical position in VCSEL component 708 intensity 710 reflective index core 712 reflective index cladding 800 comparative VCSEL component 802 comparative adaptation structure 902, 904, 906 adaptation structure1002, 1004, 1006 adaptation structure1008 deposition direction 1102 transparent electrode layer 1104 etched structure 1106 passivation 1108, 1110, 1112, 1206 step-like adaptation structure

Claims

2023P00861 P93630- 25 – CLAIMS1. A vertical cavity surface emitting laser, VCSEL,component comprising: an emitting layer configured to emit an electromagnetic radiation, an optical layer structure on or above the emitting layer, wherein the optical layer structure comprises a first region and a second region laterally adjacent to the first region, wherein the first region is configured to comprise a first optical path length and the second region is configured to comprise a second optical path length, wherein the second optical path length is larger than the first optical path length, and wherein the second region corresponds to a region of the VCSEL component emitting electromagnetic radiation to an environment of the VCSEL component; wherein the optical layer structure comprises a distributed Bragg mirror, DBR, structure on or above the emitting layer, wherein the DBR structure comprises the first region and the second region; wherein the DBR structure comprises an adaptation layer having a first thickness in the first region and a second thickness in the second region, wherein the second thickness is larger than the first thickness; and wherein the position of the adaptation layer corresponds to a transition regarding the emitting layer from a layer having a high refractive index to a layer having a low refractive index.

2. The VCSEL component of claim 1,wherein the first region is formed to laterally surround the second region.2023P00861 P93630- 26 –3. The VCSEL component of claim 1 or 2,wherein the first region and the second region are configured as an optical aperture of the VCSEL component.

4. The VCSEL component of claim 1,wherein the first region is free of the adaptation layer.

5. The VCSEL component of any one of claims 1 to 4, wherein the layer having the high refractive index is a layer of the DBR structure.

6. The VCSEL component of any one of claims 1 to 4, wherein the layer having the low refractive index is a layer of the DBR structure.

7. The VCSEL component of any one of claims 1 to 4, wherein the layer having the high refractive index is a layer of the DBR structure and the layer having the low refractive index is a layer of the DBR structure.

8. The VCSEL component of any one of claims 1 to 7,wherein the optical layer structure comprises a transparent electrode layer, wherein the emitting layer is formed on or above the transparent electrode layer; wherein the transparent electrode layer comprises the first region and the second region, wherein, in the first region, the transparent electrode layer comprises a first thickness and, in the second region, comprises a second thickness, wherein the second thickness is larger than the first thickness.

9. The VCSEL component of any one of claims 1 to 8, furthercomprising a non-conductive aperture structure formed at least in the first region, and wherein the second region2023P00861 P93630- 27 – is substantially of the non-conductive aperture structure.

10. Method for manufacturing a vertical cavity surfaceemitting laser, VCSEL, component, the method comprising: forming an emitting layer configured to emit an electromagnetic radiation, forming an optical layer structure on or above the emitting layer, wherein the optical layer structure is formed having a first region and a second region laterally adjacent to the first region, wherein the first region is formed to comprise a first optical path length and the second region is formed to comprise a second optical path length, wherein the second optical path length is larger than the first optical path length; wherein the optical layer structure comprises a distributed Bragg mirror, DBR, structure on or above the emitting layer, wherein the DBR structure comprises the first region and the second region; wherein the DBR structure comprises an adaptation layer having a first thickness in the first region and a second thickness in the second region, wherein the second thickness is larger than the first thickness; and wherein the position of the adaptation layer corresponds to a transition regarding the emitting layer from a layer having a high refractive index to a layer having a low refractive index.

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