Resists using PFAS free pags

Abstract

A photoresist composition which comprises Component A at least one aryl sulfate aryl onium salt PAG (PAG), wherein in said aryl sulfate moiety its aryl moiety is either unsubstituted or substituted, and in said aryl onium salt its aryl moieties are either unsubstituted or have at least one aryl moiety substituted; Component B: a resin essentially insoluble in aqueous 0.26 N TMAH at room temperature comprises at least one type of repeat unit which contains a base solubilizing moiety masked by an acid labile group, where the catalytic cleaving of this acid labile group by an acid, formed by radiation induced fragmentation of Component A, unmasks the base solubilizing moiety and renders the resin soluble in aqueous 0.26 N TMAH at room temperature; Component C: at least one acid quencher additive having a pKa higher than -0.5 and a boiling point of at least 150ºC at 1 atmosphere; and Component D: an organic spin casting solvent.

Description

AZ75195PC RESISTS USING PFAS FREE PAGS FIELD OF THE INVENTIONThe disclosed and claimed subject matter relates to a chemically amplified resist composition to beused in manufacturing semiconductor devices, semiconductor integrated circuits, and the like, and a method for manufacturing a resist film using the same. BACKGROUND

[0001] In a fine processing upon manufacturing electronic parts such as a semiconductor and three-dimensional micro structural articles, a photo-lithographic method is being employed generally. In the photo-lithographic method, a positive or negative-working radiation sensitive resin com-position is used to form a resist pattern. In these radiation sensitive resin compositions, a radiationsensitive resin composition comprising, for instance, as a non-limiting example, an alkali- solubleresin and a quinonediazide compound that is a photosensitive agent is widely used as a positive- working photoresist.

[0002] The radiation exposure causes a chemical transformation in the exposed areas of the coatedsurface. Visible light, ultraviolet (UV) light, electron beam and X-ray radiant energy are radiation types commonly used today in microlithographic processes. After this image-wise exposure, the coated substrate is treated with a developer solution to dissolve and remove either the radiationexposed or the unexposed areas of the photoresist. The trend toward the miniaturization ofsemiconductor devices has led to the use of new photoresists that are sensitive at lower and lower wavelengths of radiation and has also led to the use of sophisticated multilevel systems to overcome difficulties associated with such miniaturization.

[0003] There are two types of photoresist compositions: negative-working and positive-working.The type of photoresist used at a particular point in lithographic processing is determined by the design of the semiconductor device. When negative-working photoresist compositions are exposed image-wise to radiation, the areas of the photoresist composition exposed to the radiation becomeless soluble to a developer solution (e.g., a cross-linking reaction occurs) while the unexposed areasof the photoresist coating remain relatively soluble to such a solution. Thus, treatment of an exposed negative-working resist with a developer causes removal of the non-exposed areas of the photoresist coating and the creation of a negative image in the coating, thereby uncovering a desired portion of the underlying substrate surface on which the photoresist composition was deposited.

[0004] On the other hand, when positive-working photoresist compositions are exposed image-AZ75195PC wise to radiation, those areas of the photoresist composition exposed to the radiation become moresoluble to the developer solution (e.g., a rearrangement reaction occurs) while those areas notexposed remain relatively insoluble to the developer solution. Thus, treatment of an exposed positive-working photoresist with the developer causes removal of the exposed areas of the coating and the creation of a positive image in the photoresist coating. Again, a desired portion of the underlying surface is uncovered.

[0005] Photoresist resolution is defined as the smallest feature, which the resist composition cantransfer from the photomask to the substrate with a high degree of image edge acuity after exposure and development. In many leading-edge manufacturing applications today, photoresist resolutionon the order of less than one-half micron is necessary. In addition, it is almost always desirablethat the developed photoresist wall profiles be near vertical relative to the substrate. Such demarcations between developed and undeveloped areas of the resist coating translate into accurate pattern transfer of the mask image onto the substrate. This becomes even more critical as the push toward miniaturization reduces the critical dimensions on the devices. In cases where the photoresist dimensions have been reduced to below 150 nm, the roughness of the photoresistpatterns has become a critical issue. Edge roughness, commonly known as line edge roughness, istypically observed for line and space patterns as roughness along the photoresist line, and for contact holes as side wall roughness. Edge roughness can have adverse effects on the lithographicperformance of the photoresist, especially in reducing the critical dimension latitude and intransferring the line edge roughness of the photoresist to the substrate. Hence, photoresists that minimize edge roughness are highly desirable.

[0006] Photoresists sensitive to short wavelengths, between about 100 nm and about 300 nm areoften used where sub-half micron geometries are required. Particularly preferred are photoresistscomprising non-aromatic polymers, a photoacid generator (PAG), optionally a dissolution inhibitor, and solvent.

[0007] High resolution, chemically amplified, deep ultraviolet (100-300 nm) positive and negativetone photoresists are available for patterning images with less than quarter micron geometries. To date, there are three major deep ultraviolet (UV) exposure technologies that have provided significant advancement in miniaturization, and these use lasers that emit radiation at 248 nm, 193 nm and 157 nm. Additionally, at the current forefront, extreme ultraviolet (EUV) lithography at 13.5 nm using a laser-pulsed tin droplet plasma is being used to pattern photoresists.AZ75195PC

[0008] For use at UV, deep UV and EUV positive and negative chemically amplified photoresistscomprise a polymer or oligomer, a photoacid generator (PAG) and an organic spin casting solvent.In positive photoresists the polymer or oligomer is one which undergoes a catalytic deprotection ofthese materials under the influence of a photoacid generated from the PAG when irradiating a castfilm of this composition on a substrate. Conversely, in negative photoresists the polymer or oligomer is one which becomes crosslinked catalytically under the influence of the photoacid andrenders the cast film insoluble in the areas irradiated. The PAG is a photoactive component whichgenerates an acid under the influence of radiation, either directly through the absorption of UV or deep UV light directly by the PAG, indirectly through the intermediacy of a sensitizer, or in the case of EUV through the action of a secondary electron generated by the Extreme UV (EUV) radiation.

[0009] Photoresists for 248 nm have typically been based on substituted polyhydroxystyrene andits copolymers, such as those described in US 4,491,628 and US 5,350,660. On the other hand,photoresists for 193 nm exposure require non-aromatic polymers since aromatics are opaque at thiswavelength. US 5,843,624 and GB 2,320,718 disclose photoresists useful for 193 nm exposure. Generally, polymers containing alicyclic hydrocarbons are used for photoresists for exposure below 200 nm. Alicyclic hydrocarbons are incorporated into the polymer for many reasons, primarilysince they have relatively high carbon to hydrogen ratios which improve etch resistance, they alsoprovide transparency at low wavelengths, and they have relatively high glass transitiontemperatures. In these types of chemically amplified photoresist generation of photoacid occursthrough radiation induced fragmentation through a photochemical process in which the photoacidgenerator (PAG) itself under the influence of these UV radiations undergoes photodecompositionreleasing photoacid in the areas exposed to these UV radiations.

[0010] The use of chemically amplified resists has also been extended to EUV with a wavelengthof 13.5 nm or a photon energy of 91.6 eV. At this wavelength, the radiation induced photolysis ofthe photoacid generator (PAG) occurs through the absorption of the photon by any part of thecomponents in the photoresist film which leads to a primary ionization event in which an electronis ejected from an atom at high energy. This electron then collides with other atoms, leading to further ionization events which generate secondary electrons. In this electron cascade the energy of the original photon is dissipated over a limited area around the original absorption event in the formof electrons and positively charged species (“holes”) as well as electronic and thermal excitations.AZ75195PC The size of this area is limited by the path length of the primary and secondary electrons, which hasbeen estimated to be of the order of 2-3 nanometers. This results in a key difference in themechanism of acid generation by radiation induced fragmentation of a PAG between EUV and thelonger UV lithographic wavelengths such as 193 nm and 248 nm: in EUV, the direct absorption ofa photon by the PAG is no longer the primary mechanism of photoacid generation. During the exposure, the EUV photon absorption generates a steady state of electrons and holes, with the electrons losing energy in successive collisions until they have reached energies near the thermalequilibrium, or they have recombined with a hole. The PAG comes into play again at the lowerenergies in the electron cascade when its cation can capture an electron, leading to the formation of a free radical. This free radical is unstable and decomposes into uncharged reaction products, asshown in Eq. (1) for the parent triphenyl sulfonium and diphenyl iodonium cations.

[0011] As a result of the electron capture, an electron is removed from the electron / hole equilibriumthat is formed for the duration of the exposure, leaving a hole behind. The cationic species corresponding to these holes then react further to generate the proton needed to form the catalytic species (i.e., the dissociated or undissociated photoacid). The kinetics of this process have been studied in the literature, and the rates of acid formation predicted by the kinetic model are in excellent accordance with experiment. [Craig D. Higgins, Charles R. Szmanda, Alin Antohe, GregDenbeaux, Jacque Georger, and Robert L. Brainard, Japanese Journal of Applied Physics 50 (2011)036504, 10.1143 / JJAP.50.036504, DOI: 10.1143 / JJAP.50.036504]

[0012] In the above-referenced kinetic model, the concentration of the hole species R+ is reducedfrom the steady-state concentration F[R+, e-] either by acid formation or by recombination with electrons according to Eq. (2).AZ75195PC

[0013] The polymers used in a 193 nm or 248 nm photoresist are designed to be transparent to theimaging wavelength, but on the other hand, the photoactive component has either been typicallydesigned to be absorbing at the imaging wavelength to maximize photosensitivity. The photosensitivity of the photoresist is dependent on the absorption characteristics of the photoactive component, the higher the absorption, the less the energy required to generate the acid, and the more photosensitive is the photoresist. However, in EUV absorption by the polymer matrix can be beneficial as this may lead to the aforementioned primary ionization event leading to secondaryelectrons which may interact with the PAG leading to the generation of acid in the area of thephotoresist film impacted by EUV radiation.

[0014] Photoacid generators (PAG) are key components of chemically amplified resists used inphotolithography. However, the majority of photoresist formulations generate PFAS (Per and PolyFluoroAlkyl Substances) superacids upon exposure. Nowadays, the use of PFAS is subjectedunder increasing regulatory scrutiny due to their extreme persistence and bioaccumulation inenvironment. It is of general interest to find photoresist formulations containing environmentally-friendly PAGs that are free of perfluoroalkyl moieties. Furthermore, these latent acid catalystsshould possess high stability and good solubility in the field of chemically amplified photoresists.

[0015] Specific onium salts of organic sulfates [1] (Yamato et al., US 20040053158 A1) haveshown to generate strong superacids that could initiate deprotection reactions of high activation energy groups [1] or acid-catalyzed cross-linking [2] (Kunimoto et al., US 2014005301 A1). However, up to date, no pattern formation has been reported. Furthermore, the solubility of thereported PAGs in PGMEA is limited to rather thin film resists (film thickness of 800nm).DETAILED DESCRIPTION OF DRAWINGS

[0016] FIG. 1 Table 2A Results of first lithographic experiments with P(PHS / S / TBA) resin andcomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids.

[0017] FIG. 2 Table 2B Results of first lithographic experiments with P(PHS / S / TBA) resin andAZ75195PCcomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids as shown in FIG. 1 Comparative Example.

[0018] FIG. 3 Table 3A Results of second lithographic experiments with P(PHS / S / TBA) resin andcomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids as shown in FIG. 1 Comparative Example.

[0019] FIG. 4 Table 3B Results of second lithographic experiments with P(PHS / S / TBA) resin andcomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids as shown in FIG. 1 Comparative Example.

[0020] FIG. 5. Table 4A Results of third lithographic experiments with P(PHS / S / TBA) resin andcomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids.

[0021] FIG. 6 Table 4B Results of third lithographic experiments with P(PHS / S / TBA) resin andcomparing aryl sulfate based onium salt to PAGs PAGs which photorelease perfluoroalkylcontaining super acids as shown in FIG. 1 Comparative Example.

[0022] FIG. 7 Table 5 Results of lithographic experiments with P(PHS / PTBST / TBA) resincomparing aryl sulfate based onium salt PAGs to PAGs which photorelease perfluoroalkylcontaining super acids.

[0023] FIG. 8 Table 6A Results of lithographic experiments with poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene] resin and comparing aryl sulfate based onium salt PAGs to PAGs whichphotorelease perfluoroalkyl containing super acids.

[0024] FIG.9 Table 6B Results lithographic experiments with poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene] resin and comparing aryl sulfate based onium salt PAGs to PAGs whichphotorelease perfluoroalkyl containing super acids as shown in FIG. 8 Comparative Example..

[0025] FIG. 10 Table 7 Results of dose-to-print values in (PHS / S / TBA) resin of aryl sulfates basedonium salt PAGs. SUMMARY OF INVENTION

[0026] The disclosed and claimed subject matter provides new photoresist compositionscomprising perfluoroakyl and fluoroakyl free aryl onium salts of aryl sulfate based PAGs for usein photoresists sensitive to shorter wavelength radiation for example: in Deep UV (DUV) (e.g., 248nm, 193 nm) photoresists, in extreme ultraviolet (EUV) photoresists. It has been found that thesecompositions have unexpectedly been enhanced through the use of acid quencher additives and alsoAZ75195PCthrough the use of different substituents on the aryl portion of said aryl sulfate portion of these arylonium aryl sulfate PAGs aimed at improving photoacid strength and solubility. The photoresistcomposition in the disclosed and claimed subject matter provide a viable alternative to PAG whichcontain perfluorinated alkyl of fluoroalkyl, which are currently used in the industry, such as arylonium perfluoroalkyl sulfonate (PFAS) salts such as for example triphenylsulfoniumperfluorobutanesulfonate or diphenyliodonium perfluorobutanesulfonate. The disclosed and claimed subject matter also provides photoresist compositions containing perfluoroalkyl orfluoroalkyl free PAGs that show excellent lithographic performance that is comparable withphotoresists using commercial PFC-containing PAGs. DETAILED DESCRIPTION OF THE INVENTION

[0027] It is to be understood that both the foregoing general description and the following detaileddescription are illustrative and explanatory, and are not restrictive of the subject matter, as claimed. In this application, the use of the singular includes the plural, the word "a" or "an" means "at least one", and the use of "or" means "and / or," unless specifically stated otherwise. Furthermore, the use of the term "including," as well as other forms such as "includes" and "included," is not limiting. Also, terms such as "element" or "component" encompass both elements and components comprising one unit and elements or components that comprise more than one unit, unless specifically stated otherwise. As used herein, the conjunction "and" is intended to be inclusive and the conjunction "or" is not intended to be exclusive unless otherwise indicated. For example, the phrase "or, alternatively" is intended to be exclusive. As used herein, the term "and / or" refers to any combination of the foregoing elements including using a single element.

[0028] The term “alicyclic” refers to compounds containing one or more carbon chains formingrings which can be saturated hydrocarbons or may contain unsaturation but are not aromatic.

[0029] The term alkyl encompasses, linear alkyls (which includes methyl and n-alkyls), branchedalkyls and alicyclic alkyls, which encompasses both cyclic and multicyclic alkyls. More specifically if a given number of carbons is given such as a C-1 to C-4 alkyl, this embodies both methyl, C-2 toC-4 linear alkyls, C-3 to C-4 branched alkyl moieties and C-3 to C-4 alicyclic moieties, for exampleas follows: methyl, (-CH3), ethyl (-CH2-CH3), n-propyl (-CH2-CH2-CH3), isopropyl (-CH(CH3)2),n-butyl (-CH2-CH2-CH2-CH3), tert-butyl (-C(CH3)3), isobutyl (-CH2-CH(CH3)2), 2-butyl (-CH(CH3)CH2-CH3), cyclopropyl, cyclobutyl,. Similarly, the term C-1 to C-12 alkyl embodiesmethyl, C-2 to C-12 linear alkyls, C-3 to C-12 branched alkyls, C-3 to C-12 alicyclic moietiesAZ75195PCwhich encompass 1 or more rings (e.g., cyclopentyl, cyclohexyl, bicyclic such as bicyclo[2.2.1]hep-2-yl, bicyclo[2.2.1]hep-1-yl, bicyclo[2.2.2.]oct-2-yl, and the like), C-5 to C-8 alkylenecycloalkyls,and C-3 to C-8 alicyclic (e.g. cyclopropyl, cyclopentyl, cyclohexyl, bicyclic such asbicyclo[2.2.1]hep-2-yl, bicyclo[2.2.1]hep-1-yl, bicyclo[2.2.2.]oct-2-yl, bicyclo[2.2.2.)oct-1-yl andthe like). Also, the term “C-1 to C-18 alkyl” includes methyl, C-2 to C-18 linear, C-3 to C-18branched alkyls, C-4 to C-18 cycloalkyls, C-5 to C-18 alkylenecycloalkyls, C-3 to C-18 alicyclic(e.g. cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, bicyclic such as bicyclo[2.2.1]hep-2-yl,bicyclo[2.2.1]hep-1-yl, bicyclo[2.2.2.]oct-2-yl, bicyclo[2.2.2.)oct-1-yl, adamantan-1-yl,adamatan-2-yl, octahydro-1H-4,7-methanoinden-5-yl, and the like). Similarly, other carbonnumber ranges designated herein for alkyl groups embody within them the possible linear, branched,and cyclic alkyls.

[0030] The phrase “linear C-2 to C-4 alkylene” includes C-2 to C-4 alkylene moieties which arenot branched (e.g., ethylene, propylene etc.) and excludes C-3 to C-4 branched alkylene moietieswhere the attachment points of the alkylene are on the same carbon of the alkylene(e.g., -CH(CH3)-, -C(CH3)2-, -C(CH3)(CH2CH3)- etc.) but includes branched alkylene moietieswhich have at least two carbon between the attachment point of the alkylene (e.g. -CH-CH(CH3)-, (-C(CH3)-CH(CH3)-, -CH2-CH(CH3)-CH2-, -CH2-C(CH3)2-CH2-).

[0031] The phrase “a linear alkoxy moiety comprising within its chain at least one (-CH2-O-CH2-)alkyl ether functionality but which does not contain any (-CH2-O-CH2-O-) moieties,” encompasses any linear alkyloxy which encompasses within its alkyl chain at least one alkyl ether moiety butexcludes any (-CH2-O-CH2-O-) moieties that form a 1,1 attachment of two oxygen atoms on asingle carbon. In embodiments containing more than one (-CH2-O-CH2-) alkyl ether moieties thisincludes such moieties which contain within their chain one or more linear glycolic moieties (-O-alkylene-O-) which do not form an attachment of two oxygen atoms on a single carbon. Within thislarger definition is also encompassed alkoxy ether moiety having structure–Reth-O-(Reth1-O)neth- Reth3, where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3 is a C-1 to C-4 alkyl.

[0032] The term “substituted” when designating an alkyl, an alkylene, or an aryl as described herein,unless otherwise indicated, entails that substituents may be present such as alkyl, aryl,benzyl, -O-Rw, -S(=O)2-Rw, -S(=O)2-Rw, -O-S(=O)2-Rw1, -O-S(=O)2-O-Rw1, -Br, -Cl,hydroxy, -NO2, -CN, -C(=O)-H, -C(=O)-Rw, -C(=O)-Rw1, -C(=O)-O-Rw, -C(=O)-O-Rw1, -O-AZ75195PCC(=O)-O-Rw, O-C(=O)-O-Rw1, -C(=O)-S-Rw, C(=O)-S-Rw1, -S-Rw, -S-Rw1, -C(=S)-Rw, -C(=S)-Rw1, -C(=S)-O-Rw, -C(=S)-O-Rw1, -C(=S)-S-Rw, -C(=S)-S-Rw1, -O-C(=S)-S-Rw, -O-C(=S)-S-Rw1, an alkynyl, an alkenyl and the like, where Rw is an unsubstituted orsubstituted alkyl. Rw1 is a substituted or unsubstituted aryl moiety which may be substituted by Fdirectly on the aryl, where the selection of substituent on any alkyl, alkylene, or aryl moietiesspecifically excludes the presence of fluorinated alkyls, perfluorinated alkyls or any othersubstituents which would contain fluorinated alkyls, or perfluorinated alkyls, but does not exclude substituents which contain a fluorinated aryl, fluorinated arylene, and a perfluorinated aryl becausesuch moieties do not contains any fluorinated alkyls or perfluorinated alkyls.

[0033] The terms an unsubstituted C-1 to C-12 alkoxy, encompass in their alkyl portions, C-1 toC-12 linear alkyls, C-3 to C-12 branched alkyls, C-3 to C-12 alicyclic alkyls.

[0034] The term "aryl" or "aromatic groups" refers to such groups which contain 6 to 24 carbonatoms including phenyl, tolyl, xylyl, naphthyl, anthracenyl, biphenyls, bis-phenyls, tris-phenyls, and the like. These aryl groups may further be substituted with any of the appropriate substituents, e.g., alkyl, alkoxy, acyl or aryl groups mentioned herein.

[0035] The terms “fluoroalkyl” refers to an alkyl or alkylene moiety that contains at least onefluorine (e.g. -CFH-, -CF2H).

[0036] The term “perfluorinated alkyl” or perfluoroalkyl refers to a fluoroalkyl or fluoroalkylenemoiety that does not contain any hydrogen atoms (e.g. -CF2-, -CF3).

[0037] The term fluoroalkyl or fluorinated alkyl entails partially fluorinated alkyls or partiallyfluorinated alkylenes (e.g. -CHF-, -CFH2, -CF2H), and perfluoroalkyl.

[0038] When the term free of any fluoroalkyls, any perfluoroalkyls or mixtures of fluoroalkyls andperfluoroalkyls, is employed herein this refers both to alkyl moieties which contain perfluoroalkyls,perfluoroalkylenes, fluoroalkyls, fluoroalkylenes, and mixtures of these and to such moieties whichincorporate within their length a carbon to carbon double bond (=), a carbon to carbon triple bond(≡), and / or a heteroatom comprising moiety selectedfrom -O-, -S-, -C(=O)-, -C(=S)-, -S(=O)2-, -S(=O)-, -C(=O)-O-, -C(=O)-S-, -O-S(=O)2-, -O-C(=O)-O-, -C(=O)-NH-, -O-C(=O)-NH-, and -C(=O)-NR-, and mixtures thereof,where R is a C-1 to C-18 alkyl.

[0039] The term "arylene" refers to an aromatic hydrocarbon moiety which has two or moreattachment points (e.g., 2-5), this moiety may be a single benzene moiety (e.g., having twoAZ75195PC attachment points 1,4-phenylene, 1,3-phenylene and 1,2-phenylene; three attachment points 1,2,4- subsituted benzene, 1,3,5-substituted benzene and the like), a polycyclic aromatic moiety with two attachment points such derived from naphthalene, anthracene, pyrene and the like, or a multiple benzene rings in a chain which have two attachment point (e.g., biphenylene). In those instances where the aromatic moiety is a fused aromatic ring, these may be called fused ring arylenes, and more specifically named, for instance, naphthalenylene, anthracenylene, pyrenylene, and the like.Fused ring arylenes may be substituted or unsubstituted as described below, additionally these fusedring arylenes may also contain a hydrocarbon substituent which has two attachment sites on the fused ring forming an additional aliphatic or unsaturated ring forming by attachment to the fused ring a ring having 5 to 10 carbon atoms.

[0040] As used herein, “about” or “approximately” is intended to correspond to ±5% of the statedvalue.

[0041] When referring to compositions (or solutions) herein in terms of weight %, it is understoodthat in no event shall the weight % of all components, including non-essential components, such as impurities, add to more than 100 weight %. In compositions “consisting essentially of” recited components, such components may add up to 100 weight % of the compositions or may add up to less than 100 weight %. Where the components add up to less than 100 weight %, such compositions may include some small amounts of a non-essential contaminants or impurities. For example, in one such embodiment, the compositions can contain 2% by weight or less of impurities. In another embodiment, the compositions can contain 1% by weight or less than of impurities. In a further embodiment, the compositions can contain 0.05% by weight or less than of impurities. In other such embodiments, the ingredients can form at least 90 weight %, more preferably at least 95 weight %, more preferably at least 99 weight %, more preferably at least 99.5 weight %, most preferably at least 99.8 weight %, and can include other ingredients that do not affect theperformance of the wet etchant. Otherwise, if no significant non-essential impurity component ispresent, it is understood that the composition of all essential constituent components will essentially add up to 100 weight %.

[0042] The disclosed and claimed subject matter provides for resist compositions which comprisePAGs which are an aryl onium (e.g. diaryliodonium or triarylsulfonium cations) salt in which theanion is that of a strong acid selected from aryl sulfates (e.g. anion of aryl hydrogen sulfate superacids) which are free of any fluoroalkyls, any perfluoroalkyls or mixtures of fluoroalkyls andAZ75195PCperfluoroalkyls moieties, which release upon radiation induced fragmentation an aryl hydrogensulfate; an acid quencher additive having a pKa higher than -0.5 and a boiling point of at least 150ºCat 1 atmosphere; a resin essentially insoluble in aqueous 0.26 N tetramethylammonium hydroxide (TMAH) at room temperature which comprises at least one type of repeat unit which contains abase solubilizing moiety masked by an acid labile group, where the catalytic cleaving of this acidlabile group by an acid, formed by radiation induced fragmentation of the aryl onium aryl sulfatebased PAG, releasing an aryl hydrogen sulfate acid, unmasks the base solubilizing moiety and therenders the resin soluble in aqueous 0.26 N TMAH at room temperature; and an organic spin castingsolvent component.

[0043] These aryl onium aryl sulfate salts based photoacid generator (PAG), unexpectedly, havecomparable thermal stability in chemically amplified photoresist formulation compared to that ofaryl onium salts of super acids containing fluoroalkyl or perfluoroalkyl moieties (e.g. triflic acid,nonaflic acid and the like) and have acidities which are higher than those of perfluoroalkyl sulfonicacids. Table 1 compares the pKa of various aryl hydrogen sulfates compared to that of triflic acid.Even the unsubstituted aryl hydrogen sulfate, phenyl hydrogen sulfate, has a pKa which is lowerthan that of triflic acid (more acidic). Although not bound by theory the higher electronegativity ofthe oxygen atom (3.5) linked adjacent to the sulfur atom (2.5) in these aryl hydrogen sulfate PAGsmay be responsible for their higher acidity. Moreover, as also seen in Table 1, substitution of thephenyl moiety in these aryl hydrogen sulfate acids even with substutuents which are electrondonating by resonance in a para position still imparts very high acidities while substitution at the meta positions with substituents which are electron donating by resonance imparts much greater acidity than that found for perfluoroalkyl sulfonic acids such as triflic acid. Substitution at a para position with a substituent which is electron withdrawing by resonance and induction such as an alkylsulfone substituent imparts even greater acidity.

[0044] Select aryl onium salts with aryl sulfate anions in this disclosed and claimed subject matterwere tested in different types of photoresist compositions and showed excellent lithographicperformance that is comparable with references using the commercial perfluorocarbon (PFC)-containing onium salt PAGs.

[0045] One aspect of this disclosed and claimed subject matter is a Chemically amplifiedphotoresist composition which comprises Component A, Component B, Component C and component D:AZ75195PC

[0046] Component A: at least one aryl sulfate aryl onium salt PAG (PAG), wherein in said arylsulfate moiety its aryl moiety is either unsubstituted or substituted with at least one substituent selected from the group consisting of an alkyl, an alkoxy, an aryl, -CN, -NO2, -S(=O)2-alkyl, -S(=O)2-aryl, -F, -Cl, and -Br, a linear alkoxy moiety comprising within its chain at least one (-CH2-O-CH2-) alkyl ether functionality but which does not contain any (-CH2-O-CH2-O-) moieties, andin said aryl onium salt its aryl moieties are either unsubstituted or have at least one aryl moietysubstituted with at least one substituent selected from the group consisting of an alkyl, and an alkoxy,

[0047] Component B: a resin essentially insoluble in aqueous 0.26 N TMAH at room temperaturecomprising at least one type of repeat unit which contains a base solubilizing moiety masked by an acid labile group, where the catalytic cleaving of this acid labile group by an acid, formed by radiation induced fragmentation of Component A, unmasks the base solubilizing moiety and renders the resin soluble in aqueous 0.26 N TMAH at room temperature,

[0048] Component C: at least one acid quencher additive having a pKa higher than -0.5 and aboiling point of at least 150ºC at 1 atmosphere.

[0049] Component D: an organic spin casting solvent, wherein further said composition is free ofany perfluoroalkyl, fluoroalkyl moieties or mixture thereof.

[0050] Another aspect of this disclosed and claimed subject matter is one wherein said ComponentA is at least one aryl sulfate onium salt photoacid generator (PAG) selected from the groupconsisting of ones having structure (I), (II), (III), (IV), (V), (VI), (VII), (VIII), (IX), (X), (XI) and (XII), wherein in these structures, R1, R2, R3, R1a, R2b, are independently selected from hydrogen, a C-1 to C-12 alkyl, or a C-1 to C-12 alkoxy, R4is independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O- (Reth1-O)neth-Reth3, where Rethis a C-1 to C-4 alkylene, Reth1is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3 is a C-1 to C-4 alkyl, R5 is independently selected from aC-1 to C-12 alkyl, an unsubstituted aryl and a substituted aryl, R6 is independently selected fromH or a C-1 to C-12 alkyl, X is independently a halide selected from the group consisting of F, Cl and Br and ni, and niii, are independently a integer from 1 to 5, nii and niia are integers from 1 to 4, where the sum of nii and niia ranges from 2 to 5:AZ75195PC Table 1Photoacid Formed Predicted pKa(ACD / Labs)* -3.9 -4.3 -4.3 -3.7 -4.62 -4.8 -4.04 -4.91 -4.84 -5.72 -4.95 -4.43 *ACD / pKa software version 4.0 for Microsoft windows, Advanced Chemistry development Inc 8 King Street East, Suite 107, Toronto, Ontario Canada)AZ75195PC

[0051] Component B: a resin essentially insoluble in aqueous 0.26 N tetramethylammoniumhydroxide (TMAH) at room temperature which comprises at least one type of repeat unit whichcontains a base solubilizing moiety masked by an acid labile group, where the catalytic cleaving ofthis acid labile group by an acid, formed by radiation induced fragmentation of Component A,unmasks the base solubilizing moiety and renders the resin soluble in aqueous 0.26 N TMAH at room temperature,AZ75195PC

[0052] Component C: at least one acid quencher additive having a pKa higher than -0.5 and aboiling point of at least 150ºC at 1 atmosphere.

[0053] Component D: an organic spin casting solvent.

[0054] In one aspect of said composition it is free of any alkyl sulfate onium salt PAGs orsubstituted alkyl sulfate onium salt PAGs. Structure (AS) shows a general structure for thesematerials where Ras is an unsubstituted alkyl or a substituted alkyl, Xas is I or S, as1 is 2 when Xasis I, and 3 when Xas is S, and Ra is individually selected from an unsubstituted aryl, a substitutedaryl, an unsubstituted alkyl, and a substituted alkyl, where at least one Ra in structure (AS) is eitheran unsubstituted aryl or a substituted aryl.(AS)

[0055] In one aspect of said composition, one or more optional components may be present suchas the following: Optional Component E: A surfactant additive.Optional Component F: Other type of PAGs which do not contain any fluoroalkyl moieties andare not alkyl sulfate onium salt PAGs or substituted alkyl sulfate onium salt PAGs.

[0056] In one aspect of this general embodiment these compositions are ones consisting essentiallyof Component A, Component B, Component C and Component D. In another aspect of thisembodiment these compositions are ones which consist of Component A, Component B,Component C and Component D. In another aspect of this embodiment these compositions are onesconsisting essentially of Component A, Component B, Component C, Component D andComponent E. In another aspect of this embodiment said these compositions are ones which consistof Component A, Component B, Component C, Component D and Component E. In another aspectof this embodiment these compositions are ones consisting essentially of Component A,Component B, Component C, Component D, Component E and Component F. In another aspect ofthis embodiment said these compositions are ones which consist of Component A, Component B,Component C, Component D, Component E, and Component F. In another aspect of thisembodiment these compositions are ones consisting essentially of Component A, Component B,Component C, Component D and Component F. In another aspect of this embodiment said thesecompositions are ones which consist of Component A, Component B, Component C, ComponentD and Component F.AZ75195PC General Examples of Component B Component B for 248 nm Photoresists

[0057] In another aspect of said composition Component B, said resin, essentially insoluble inaqueous 0.26 N TMAH at room temperature comprises repeat units derived from 4-hydroxystyrene in addition to at least one type of repeat unit which contains a base solubilizing moiety masked by an acid labile group, where the catalytic cleaving of this acid labile group by an acid formed byradiation induced fragmentation of Component A, unmasks the base solubilizing group and rendersthe resin soluble in aqueous 0.26 N TMAH at room temperature and further, where it does notcontain any repeat units comprising moieties which impart a high absorbance at 248 nm greaterthan 0.8 Absorbance Unit (AU) / micron to a coated film of said resin. In one embodiment saidresin has an absorbance at 248 nm from about 0.4 Absorbance Units(AU) per micron to about 0.5(AU) / micron.

[0058] Photoresists resins suitable for 248 nm normally comprise polyhydroxystyrene or substitutedpolyhydroxystyrene derivatives possibly copolymerized with acrylate or methacrylate repeat units.In one aspect of this embodiment these composition for use in 248 nm are ones consistingessentially of Component A, Component B, Component C and Component D. In another aspect ofthis embodiment said these compositions are ones which consist of Component A, Component B,Component C and Component D. In another aspect of this embodiment these compositions areones consisting essentially of Component A, Component B, Component C, Component D andComponent E. In another aspect of this embodiment said these compositions are ones which consistof Component A, Component B, Component C, Component D and Component E. In another aspectof this embodiment these compositions are ones consisting essentially of Component A,Component B, Component C, Component D, Component E and Component F. In another aspect of this embodiment said these compositions are ones which consist of Component A, Component B, Component C, Component D, Component E, and Component F. In another aspect of thisembodiment these compositions are ones consisting essentially of Component A, Component B,Component C, Component D and Component F. In another aspect of this embodiment said thesecompositions are ones which consist of Component A, Component B, Component C, ComponentD and Component F.Component B for 193 nm Photoresists

[0059] In another aspect of said composition Component B, is resin suitable for 193 nmAZ75195PClithography (wet or dry) where said resin is essentially insoluble in aqueous 0.26 N TMAH at roomtemperature, does not contain any repeat units comprising moieties which impart a high absorbanceat 193 nm greater than 0.8 Absorbance Unit (AU) / micron to a coated film of said resin, andcomprises a base solubilizing moiety masked by an acid labile group, which is derived from anacrylate or methacrylate repeat unit wherein, in these, the carboxylic acid moiety is masked by saidacid labile group where the catalytic cleaving of said acid labile group by an acid, formed by theradiation induced fragmentation of Component A, unmasks the base solubilizing group and renders this resin soluble in aqueous 0.26 N TMAH at room temperature. In one embodiment said resin film has an absorbance at 193 nm from about 0.4 AU / micron to about 0.5 AU / micron.

[0060] Particularly preferred for 193 nm are photoresist resins comprising non-aromatic polymers.Optionally a solubility inhibitor may be present along with these resins. Photoresists resins suitablefor 193 nm that are known in the prior art are described in the following documents and incorporated herein, WO 97 / 33198, U.S. Pat. No. 5,585,219, Proc. SPIE, vols.3333 (1998), 3678 (1999), 3999 (2000), 4345 (2001). Particularly preferred for 193 nm exposure are photoresists resins comprisingnon-aromatic polymers, apart from the PAG, optionally a solubility inhibitor component may bepresent. Photoresists sensitive at 193 nm that are known in the prior art are described in the following references and incorporated herein, Proc. SPIE, vols.3999 (2000), 4345 (2001), althoughany photoresist resin suitable for 193 nm lithography may be used.

[0061] In one aspect of this embodiment these composition for use in 193 nm lithography they areones consisting essentially of Component A, Component B, Component C and Component D. Inanother aspect of this embodiment said these compositions are ones which consist of ComponentA, Component B, Component C and Component D. In another aspect of this embodiment thesecompositions are ones consisting essentially of Component A, Component B, Component C,Component D and Component E. In another aspect of this embodiment said these compositionsare ones which consist of Component A, Component B, Component C, Component D andComponent E. In another aspect of this embodiment these compositions are ones consistingessentially of Component A, Component B, Component C, Component D, Component E andComponent F. In another aspect of this embodiment said these compositions are ones which consistof Component A, Component B, Component C, Component D, Component E, and Component F.In another aspect of this embodiment these compositions are ones consisting essentially ofComponent A, Component B, Component C, Component D and Component F. In another aspectAZ75195PC of this embodiment said these compositions are ones which consist of Component A, ComponentB, Component C, Component D and Component F.Component B for EUV (e.g., 13.5 nm) Photoresists

[0062] In another aspect of said composition, Component B, said resin essentially insoluble inaqueous 0.26 N TMAH at room temperature, is a EUV resin which comprises at least one basesolubilizing moiety masked by an acid labile group, which is derived from a phenolic repeat unit,an acrylate repeat unit, a methacrylate repeat unit or a mixture of these, wherein the carboxylicacid moiety and / or the phenolic moiety of these are masked by said acid labile group where thecatalytic cleaving of said acid labile group by an acid, formed by the radiation induced fragmentation of Component A, unmasks the base solubilizing group and renders this resin soluble in aqueous 0.26 N TMAH at room temperature. In one embodiment said resin film has anabsorbance at 13.5 nm from about 0.4 AU / micron to about 0.5 AU / micron.

[0063] The review article “Trends in photoresist materials for extreme ultraviolet Lithography: Areview (Materials Today Volume 627 July / August 2023, pages 299-319) describes several types of resins which may be used in chemically amplified photoresists developable by aqueous base. Thisreference is incorporated by reference. For examples as described in this reference, resins may beof various types such as Conventional Chemically amplified photoresists such as those used in 193nm or 248 nm resists. For examples those based upon 4-hydroxystyrene / styrene / tert-butyl acrylate terpolymers. Another type are photoresist resins based on protected poly(4-hydroxystyrene) with bulky acetal groups. Another type are main-chain scission type chemically amplified photoresistswhere the acid catalyzed cleavage from photogenerated acid in the exposed areas under theinfluence of photogenerated acid concept leads to the generation of polymer fragments which aresoluble in aqueous based developer.

[0064] In one aspect of this embodiment these compositions for use in EUV nm lithography theyare ones consisting essentially of Component A, Component B, Component C and Component D.In another aspect of this embodiment said these compositions are ones which consist of Component A, Component B, Component C and Component D. In another aspect of this embodiment thesecompositions are ones consisting essentially of Component A, Component B, Component C,Component D and Component E. In another aspect of this embodiment said these compositionsare ones which consist of Component A, Component B, Component C, Component D andComponent E. In another aspect of this embodiment these compositions are ones consistingAZ75195PCessentially of Component A, Component B, Component C, Component D, Component E andComponent F. In another aspect of this embodiment said these compositions are ones which consistof Component A, Component B, Component C, Component D, Component E, and Component F.In another aspect of this embodiment these composition are ones consisting essentially of Component A, Component B, Component C, Component D and Component F. In another aspect of this embodiment said these compositions are ones which consist of Component A, Component B, Component C, Component D and Component F.

[0065] In one aspect of this disclosed and claimed subject matter the above described Embodimentsof Component B, said resin essentially insoluble in aqueous 0.26 N TMAH at room temperature,are ones that when coated as a film as part of these inventive photoresist compositions on a substrate,and not subjected to irradiation, undergo a dark erosion of less than 1 % of the thickness of said coated film when it is exposed to an aqueous 0.26 N TMAH based developer at room temperature(dark erosion). In another aspect, this dark erosion is less than 0.5 %. In another aspect it is lessthan 0.4 %. In another aspect it is less than 0.3 %. In another aspect it is less than 0.2 %. In anotheraspect it is less than 0.1%. Generally, in this disclosed and claimed subject matter it is preferred tohave less % dark erosion of film thickness with decreasing wavelength of the radiation used toexpose a photoresist composition, decreasing thickness of the photoresist composition, anddecreasing size of the patterns being imaged by these inventive photoresist compositions containingthe various above-described embodiments or Component B which are all resins essentiallyinsoluble in aqueous 0.26 N TMAH at room temperature.

[0066] Component A: Aryl sulfate Onium Salt PAGsDetailed Description Structure (Ia)

[0067] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (I). In a more specific aspect of this embodiment it has structure(Ia), in one aspect of this embodiment R1, R2, and R3, are individually selected from a C-1 to C-12alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another aAZ75195PC C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least oneof R1, R2, and R3 is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. Inanother aspect of this embodiment at least one of R1, R2, and R3are individually selected from isselected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 toC-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is either t-butyl or t-amyl. In another aspect of thisembodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkyl and at least one ofR1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl.

[0068] In another aspect of these embodiments of structure (Ia), R4 is a C-1 to C-12 linear alkyl.

[0069] In another aspect of these embodiments of structure (Ia), R4 is a C-3 to C-12 branched alkyl.

[0070] In another aspect of these embodiments of structure (Ia), R4 is a C-3 to C-12 alicyclic alkyl.In one aspect of this embodiment R4 is cyclopropyl, in another it is cyclobutyl, in another it iscyclohexyl, in another it is cycloheptyl, in another it is cyclooctyl, in another is it adamantyl, inanother it is Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0071] In another aspect of these embodiments of structure (Ia), when R4 it is an alkyl ether moietyhaving structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. In another aspect of theseembodiments Reth is a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, inyet another embodiment it is ethylene. In another aspect of these embodiment Reth1 is a linear C-2 to C-4 alkylene, in another embodiment it is a C-2 to C-3 alkylene and in yet another embodiment it is ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in another embodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of theseembodiments Reth3 is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet anotherit is methyl.

[0072] In another aspect of these embodiments for structure (Ia), it more specifically has structure(Ia-1). In yet another aspect of this embodiment it has structure (Ia-2). In yet another aspect of this embodiment it has structure (Ia-3). In yet another aspect of this embodiment it has structure (Ia-4). In yet another aspect of this embodiment it has structure (Ia-5). In yet another aspect of this embodiment it has structure (Ia-6). In yet another aspect of this embodiment it has structure (Ia-7). In yet another aspect of this embodiment it has structure (Ia-8), as follows:AZ75195PCStructure (Ib)

[0073] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG has structure (I), in a more specific aspect it has structure (Ib), where in one aspectAZ75195PC of this embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3are individually selected from a C-1 to C- 12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another aspect of this embodiment R1, R2, and R3are H.

[0074] In structure (Ib), R4a and R4b are independently selected from the group consisting of a C-1to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is aninteger ranging from 1 to 6, and Reth3 is a C-1 to C-4 alkyl. In another aspect of these embodimentsof structure (Ib), R4a and R4b are individually selected from a C-1 to C-12 linear alkyl. In one aspectof this R4a and R4b are individually selected from a C-3 to C-12 branched alkyl. In another aspectof this embodiment of structure (Ib), R4a and R4b are a C-3 to C-12 alicyclic alkyl. In one aspect ofthis embodiment R4a and R4b are cyclopropyl, in another cyclobutyl, in another cyclohexyl, inanother cycloheptyl, in another cyclooctyl, is another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0075] In another aspect of these embodiments of structure (Ib), when R4a and R4b these areindividually selected from said alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. In another aspect of these embodiments Rethis a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, in yet another embodiment it is ethylene. In another aspect of these embodiment Reth1 is a linear C-2 to C-4 alkylene, in another embodiment it is a C-2AZ75195PC to C-3 alkylene and in yet another embodiment it is ethylene. In another aspect of theseembodiments neth is an integer from 2 to 5, in another embodiment this integer is from 2 to 3, inyet another embodiment it is 2. In another aspect of these embodiments Reth3is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.

[0076] In yet another aspect of these embodiment said aryl sulfate PAG more specifically hasstructure (Ib-1). In yet another aspect of these embodiments said aryl sulfate PAG has structure(Ib-2). In yet another aspect of these embodiments said aryl sulfate PAG has structure (Ib-3). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (Ib-4). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (Ib-5). In yet another aspect ofthese embodiments said aryl sulfate PAG has structure (Ib-6). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (Ib-7). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (Ib-8), as follows:AZ75195PC Structure

[0077] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (I), in one aspect of this embodiment it more specifically hasstructure (Ic), in one aspect of this embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in anothera C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodimentAZ75195PC at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another aspect of this embodiment R4, R4a and R4b are independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1- O)neth-Reth3, where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3is a C-1 to C-4 alkyl.

[0078] In another aspect of this embodiment of structure (Ic), R4, R4a and R4b are a C-3 to C-12branched alkyl. In another aspect of this embodiment of structure (Ic), R4, R4a and R4b are a C-3 toC-12 alicyclic alkyl. In one aspect of this embodiment R4, R4a and R4b are cyclopropyl, in anothercyclobutyl, in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0079] In another aspect of this embodiment of structure (Ic), when R4, R4a and R4b are individuallyselected from said alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodimentit is methyl. In another aspect of these embodiments Reth is a linear C-2 to C-4 alkylene, in anotheraspect it is a C-2 to C-3 alkylene, in yet another embodiment it is ethylene. In another aspect of thisembodiment Reth1 is a linear C-2 to C-4 alkylene, in another embodiment it is a C-2 to C-3 alkyleneand in yet another embodiment it is ethylene. In another aspect of this embodiments neth is aninteger from 2 to 5, in another embodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of these embodiments Reth3is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.

[0080] In another aspect of this embodiment wherein said aryl sulfate PAG has structure (Ic) itmore specifically has structure (Ic-1). In yet another aspect of this embodiment said aryl sulfatePAG has structure (Ic-2). In yet another aspect of this embodiment said aryl sulfate PAG hasstructure (Ic-3). In yet another aspect of this embodiment said aryl sulfate PAG has structure (Ic-4). In yet another aspect of this embodiment said aryl sulfate PAG has structure (Ic-5). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (Ic-6); in yet another aspectof this embodiment said aryl sulfate PAG has structure (Ic-7). In yet another aspect of this embodiment said aryl sulfate PAG has structure (Ic-8), as follows:AZ75195PCAZ75195PCStructure IIa

[0081] In one aspect of the embodiments of the compositions described above Component A,wherein, said aryl sulfate PAG, has structure (II), it more specifically has structure (IIa), in oneaspect of this embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, inanother aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected froma C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another aC-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from is selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of thisembodiment at least one of R1, R2, and R3 is either t-butyl or t-amyl. In another aspect of thisembodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1, R2, and R3are H.

[0082] In another aspect of these embodiments of structure (IIa), X, is selected from F, Cl and I, inone aspect it is F, in another it is Cl and in yet another it is Br. In another aspect of theseembodiments of structure (IIa), R4a and R4b are individually selected from a C-1 to C-12 linearalkyl.AZ75195PC

[0083] In another aspect of this embodiment of structure (IIa), R4a and R4b are a C-3 to C-12branched alkyl.

[0084] In another aspect of this embodiment of structure (IIa), R4a and R4b are a C-3 to C-12alicyclic alkyl. In one aspect of this embodiment R4a and R4b are cyclopropyl, in another cyclobutyl,in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in another adamantyl, in yetanother Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0085] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (II). In another aspect of this embodiment said aryl sulfate PAG hasstructure (IIa), where R4aand R4bare independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integerranging from 1 to 6, and Reth3 is a C-1 to C-4 alkyl.

[0086] In yet another aspect of this embodiment said aryl sulfate PAG has structure (IIa-1). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (IIa-2). In yet another aspectof this embodiment said aryl sulfate PAG has structure (IIa-3). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (IIa-4). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (IIa-5). In yet another aspect of this embodiment said aryl sulfatePAG has structure (IIa-6). In yet another aspect of this embodiment said aryl sulfate PAG hasstructure (IIa-7). In yet another aspect of this embodiment said aryl sulfate PAG has structure(IIa-8), as follows:AZ75195PC

[0087] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (II), it more specifically has structure (IIb). In one aspect ofthis embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedAZ75195PC from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C- 7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C- 12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1, R2, and R3 are H.

[0088] In another aspect of this embodiment of structure (IIb), Xa and Xb are individually selectedfrom F, Cl and I, in one Xa and Xb aspect are F, in another Xa and Xb are Cl, and in yet another Xaand Xbare Br. In another aspect of this embodiment of structure (IIb), Xaand Xbare individually selected from F, Cl and Br.

[0089] In another aspect of this embodiment of structure (IIb), R4 is a C-1 to C-12 linear alkyl. Inanother aspect of this embodiment of structure (IIb), R4 is a C-3 to C-12 branched alkyl. In anotheraspect of this embodiment of structure (IIb), R4 is C-3 to C-12 alicyclic alkyl. In one aspect of thisembodiment R4 is cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl,in another cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl(octahydro-1H-4,7-methanoindenyl).

[0090] In another aspect of this embodiment of structure (IIb), when R4 is said alkyl ether moietyhaving structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. In another aspect of theseembodiments Reth is a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, inyet another embodiment it is ethylene. In another aspect of these embodiment Reth1 is a linear C-2to C-4 alkylene, in another embodiment it is a C-2 to C-3 alkylene and in yet another embodiment it is ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in anotherembodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of theseembodiments Reth3is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.AZ75195PC

[0091] In yet another aspect of these embodiments said aryl sulfate PAG has structure (IIb-1). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (IIb-2). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IIb-3). In yet another aspect ofthese embodiments said aryl sulfate PAG has structure (IIb-4). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IIb-5). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IIb-6). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IIb-6). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IIb-7). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IIb-8), as follows:AZ75195PCStructure (IIIa)

[0092] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (III). In one aspect of this embodiment R1, R2, and R3, areindividually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they areselected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-10 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, inanother a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least oneof R1, R2, and R3 are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1AZ75195PC to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodimentsaid alkyl is t-butyl or t-amyl. In one aspect of this embodiment said aryl sulfate PAG has structure(IIIa). In one aspect of this embodiment R5is a C-1 to C-12 linear alkyl. In one aspect of this embodiment R5 is a C-3 to C-12 branched alkyl. In another aspect of this embodiment of structure(IIIa), R5 is C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R5 is cyclopropyl, inanother cyclobutyl, in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in anotheradamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl). Inanother aspect of this embodiment R5is an unsubstituted aryl. In another aspect of this embodiment R5is a substituted aryl.

[0093] In yet another aspect of these embodiments said aryl sulfate PAG has structure (IIIa-1). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (IIIa-2). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IIIa-2), as follows:Structure (IIIb)

[0094] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (III). In one aspect of this embodiment said aryl sulfate PAG hasstructure (IIIb).

[0095] In one aspect of this embodiment R5 is a C-1 to C-12 linear alkyl. In another aspect of theseembodiment of structure (IIIb), R5 is a C-3 to C-12 branched alkyl. In another aspect of this embodiment of structure (IIIb), R5is C-3 to C-12 alicyclic alkyl. In one aspect of this embodimentR5 is cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl, in anothercyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl). In another aspect of this embodiment R5 is an unsubstituted aryl. In anotheraspect of this embodiment R5 is a substituted aryl.

[0096] In one aspect of the embodiments of the compositions described above Component A, whereAZ75195PCsaid aryl sulfate PAG has structure (IIIb), it more specifically has structure (IIIb-1). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IIIb-2).Structure (IVa)

[0097] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (IV). In one aspect of this embodiment niii is 4 or 5. In anotheraspect of this embodiment niii is 5 and said aryl sulfate PAG has structure (IVa). In one aspect ofthis embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In anotheraspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a morespecific aspect of this embodiment said alkyl is t-butyl or t-amyl. In one embodiment R1, R2, andR3 are H.

[0098] In one embodiment Xa, Xb, Xc and Xd are independently a halide selected from the groupAZ75195PCconsisting of F, Cl and Br. In one embodiment X, Xa, Xb, Xc and Xd are F. In another embodimentX, Xa, Xb, Xc and Xd are Cl. In another embodiment X, Xa, Xb, Xc and Xd are Br.

[0099] In yet another aspect of these embodiments of said aryl sulfate PAG having structure (IVa)it has structure (IVa-1). In yet another aspect of these embodiments said aryl sulfate PAG hasstructure (IVa-2). In yet another aspect of these embodiments said aryl sulfate PAG has structure(IVa-3). In yet another aspect of these embodiments said aryl sulfate PAG has structure (IVa-4),as follows:Structure (IVb)

[0100] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (IV) it more specifically has structure (IVb). In one aspect ofthis embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedAZ75195PC from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C- 7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C- 12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In one embodiment R1, R2, and R3 are H.

[0101] In one aspect of this embodiment X is F. In another aspect of this embodiment X is Cl. Inanother aspect of this embodiment X is Br.

[0102] In yet another aspect of these embodiments said aryl sulfate PAG has structure (IVb-1). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (IVb-2). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IVb-3). In yet another aspect ofthese embodiments said aryl sulfate PAG has structure (IVb-4). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IVb-5). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IVb-6). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IVb-7). In yet another aspect of theseembodiments said aryl sulfate PAG has structure (IVb-8), as follows:AZ75195PCStructure (IVc)

[0103] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (IV) it more specifically has structure (IVc). In one aspect ofthis embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C- 12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In one embodiment R1, R2, andAZ75195PC R3are H.

[0104] In one aspect of this embodiment, Xa, Xb are independently a halide selected from the groupconsisting of F, Cl and Br. In one aspect of this embodiment Xa and Xb are F. In another aspect ofthis embodiment Xa and Xb are Cl. In another aspect of this embodiment Xa and Xb are Br.

[0105] In yet another aspect of these embodiments said aryl sulfate PAG has structure (IVc-1). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (IVc-2). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IVc-3). In yet another aspect ofthese embodiments said aryl sulfate PAG has structure (IVc-4), as follows:Structure (IVd)

[0106] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (IV) it more specifically has structure (IVd). In one aspect ofthis embodiment R1, R2, and R3, are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedAZ75195PC from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C- 12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another aC-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least oneof R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In one embodiment R1, R2, and R3 are H.

[0107] In one aspect of this embodiment, Xa, Xb are independently a halide selected from the groupconsisting of F, Cl and Br. In one embodiment X, Xa and Xb are F. In another embodiment X, Xaand Xb are Cl. In another embodiment X, Xa and Xb are Br.

[0108] In yet another aspect of these embodiments said aryl sulfate PAG has structure (IVd-1). Inyet another aspect of these embodiments said aryl sulfate PAG has structure (IVd-2). In yet anotheraspect of these embodiments said aryl sulfate PAG has structure (IVd-3). In yet another aspect ofthese embodiments said aryl sulfate PAG has structure (IVd-4), as follows:AZ75195PCStructure (V)

[0109] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (V). In one aspect of this embodiment R1, R2, and R3, areindividually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they areselected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-10 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, inanother a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3 are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In one embodiment R1, R2, and R3 are H.

[0110] In another aspect of this embodiment said aryl sulfate PAG has structure (Va). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (Vb), as follows:AZ75195PCStructure (VI)

[0111] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (VI). In one aspect of this embodiment R1, R2, and R3, areindividually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they areselected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-10 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, inanother a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3 is selected from a C-1 to C-12 alkoxy, and at least one of R1, R2, and R3, is H. In another aspect of this embodiment at least one of R1, R2, and R3are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1, R2, and R3is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1, R2, and R3is selected from a C-1 to C-12 alkyl and at least one of R1, R2, and R3, is H, in a more specific aspect of this embodimentsaid alkyl is t-butyl or t-amyl. In one embodiment R1, R2, and R3 are H. In one aspect of theembodiments of the compositions described above Component A, said aryl sulfate PAG, has structure (VIa) or structure (VIb).

[0112] In one embodiment R6 is a C-1 to C-12 linear alkyl. In another aspect of this embodimentof structure (VI), R6is a C-3 to C-12 branched alkyl. In another aspect of this embodiment ofstructure (VI), R6 is a C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R6 iscyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-AZ75195PC methanoindenyl).

[0113] In another aspect of this embodiment, it has structure (VIa). In another aspect of thisembodiment, it has structure (VIa-1). In yet another aspect of this embodiment, it has structure (VIa-2). In another aspect of this embodiment, it has structure (VIa-3). In yet another aspect of thisembodiment, it has structure (VIa-4). In another aspect of this embodiment, it has structure (VIb).In another aspect of this embodiment, it has structure (VIb-1). In another aspect of this embodiment, it has structure (VIb-2). In yet another aspect of this embodiment, it has structure (VIb-3). In yet another aspect of this embodiment, it has structure (VIb-4), as follows:AZ75195PCStructure (VIIa)

[0114] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (VII). In a more specific aspect of this embodiment it has structure(VIIa), in one aspect of this embodiment R1a, R2b are individually selected from a C-1 to C-12alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected froma C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another aC-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least oneof R1a or R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a, R2b is H. In anotheraspect of this embodiment at least one of R1a and R2b are individually selected from a C-1 to C-12alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of R1aAZ75195PC or R2bis either t-butyl or t-amyl. In another aspect of this embodiment at least one R1aor R2bis selected from a C-1 to C-12 alkyl and at least one of R1aor R2bis H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another aspect of this embodiment R1aand R2bare H.

[0115] In another aspect of this embodiment of structure (VIIa), R4 is a C-1 to C-12 alkyl, it is a C-1 to C-12 linear alkyl. In another aspect of this embodiment of structure (VIIa), R4 is a C-3 to C- 12 branched alkyl. In another aspect of this embodiment of structure (VIIa), R4is a C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment is cyclopropyl, in another it is cyclobutyl, in another it is cyclohexyl, in another it is cycloheptyl, in another it is cyclooctyl, in another is itadamantyl, in another it is Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0116] In another aspect of this embodiment of structure (VIIa), when R4 it is an alkyl ether moietyhaving structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3 is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. In another aspect of theseembodiments Reth is a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, inyet another embodiment it is ethylene. In another aspect of this embodiment Reth1 is a linear C-2 toC-4 alkylene, in another embodiment it is a C-2 to C-3 alkylene and in yet another embodiment itis ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in anotherembodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of these embodiments Reth3 is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.

[0117] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (VII). In another aspect of this embodiment said aryl sulfate PAGhas structure (VIIa). In yet another aspect of this embodiment said aryl sulfate PAG has structure(VIIa-1). In yet another aspect of this embodiment said aryl sulfate PAG has structure (VIIa-2). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (VIIa-3). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (VIIa-4). In yet another aspect ofthis embodiment said aryl sulfate PAG has structure (VIIa-5). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (VIIa-6). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (VIIa-7). In yet another aspect of this embodiment said arylsulfate PAG has structure (VIIa-8), as follows:AZ75195PCStructure (VIIb)

[0118] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (VII), it more specifically has structure (VIIb), where R4a andR4bare independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Rethis a C-1 toC-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3is a C-1 to C-4 alkyl. In one aspect of this embodiment R1a and R2b are individually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of thisAZ75195PC embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkoxy, and at least one of R1aand R2bis H. In another aspect of this embodiment at least one of R1aand R2bare individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of thisembodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodimentat least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H,in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1aand R2bare H

[0119] In another aspect of this embodiment of structure (VIIb), R4a and R4b are individuallyselected from a C-1 to C-12 linear alkyl. In one aspect of this embodiment R4a and R4b areindividually selected from a C-3 to C-12 branched alkyl. In another aspect of this embodiment ofstructure (VIIb), R4a and R4b are a C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R4aand R4b are cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl, inanother cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro- 1H-4,7-methanoindenyl).

[0120] In another aspect of this embodiment of structure (VIIb), when R4a and R4b are individuallyalkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3 is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. Inanother aspect of these embodiments Reth is a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, in yet another embodiment it is ethylene. In another aspect of these embodimentReth1 is a linear C-2 to C-4 alkylene, in another embodiment it is a C-2 to C-3 alkylene and in yetanother embodiment it is ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in another embodiment this integer is from 2 to 3, in yet another embodiment it is 2. Inanother aspect of these embodiments Reth3 is a C-1 to C-3 alkylene, in another aspect it is a C-1 toC-2 alkyl, in yet another it is methyl.

[0121] In yet another aspect of this embodiment said aryl sulfate PAG has structure (VIIb-1). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (VIIb-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (VIIb-3). In yet another aspect ofthis embodiment said aryl sulfate PAG has structure (VIIb-4). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (VIIb-5). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (VIIb-6). In yet another aspect of this embodiment said arylAZ75195PCsulfate PAG has structure (VIIb-7). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (VIIb-8), as follows:

[0122] In one aspect of the embodiments of the compositions described above Component A, wheresaid aryl sulfate PAG, has structure (VII), it more specifically has structure (VIIc) where R4, R4aand R4b are independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Rethis a C-1 toC-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3AZ75195PC is a C-1 to C-4 alkyl. In one aspect of this embodiment R1aand R2bare individually selected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkoxy, and at least one of R1aand R2bis H. In another aspect of this embodiment at least one of R1aand R2bare individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of n is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1aand R2bare H.

[0123] In another aspect of this embodiment of structure (VIIc), R4 R4a and R4b are individuallyselected from a C-1 to C-12 linear alkyl. In another aspect of this embodiment of structure (VIIc),R4a and R4b are a C-3 to C-12 branched alkyl. In another aspect of this embodiment of structure(VIIc), R4a and R4b are a C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R4a and R4bare cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl, in anothercyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0124] In another aspect of this embodiment of structure (VIIc), when R4, R4a and R4b areindividually selected from an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3 is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet anotherembodiment it is methyl. In another aspect of these embodiments Reth is a linear C-2 to C-4 alkylene,in another aspect it is a C-2 to C-3 alkylene, in yet another embodiment it is ethylene. In anotheraspect of these embodiment Reth1 is a linear C-2 to C-4 alkylene, in another embodiment it is a C-2to C-3 alkylene and in yet another embodiment it is ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in another embodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of these embodiments Reth3 is a C-1 to C-3AZ75195PC alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.

[0125] In yet another aspect of this embodiment said aryl sulfate PAG has structure (VIIc-1). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (VIIc-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (VIIc-3). In yet another aspect ofthis embodiment said aryl sulfate PAG has structure (VIIc-4). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (VIIc-5). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (VIIc-6). In yet another aspect of this embodiment said arylsulfate PAG has structure (VIIc-7). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (VIIc-8), as follows:AZ75195PC(VIIc-8)

[0126] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (VIII). In one aspect of this embodiment R1a and R2b are individuallyselected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkoxy, and at leastone of R1a and R2b is H. In another aspect of this embodiment at least one of R1a and R2b areindividually selected from is selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t- amyl. In another embodiment R1a and R2b are H.

[0127] In another aspect of these embodiments of structure (VIIIa), X, is selected from F, Cl and I,in one aspect it is F, in another it is Cl and in yet another it is Br. In another aspect of theseembodiments of structure (VIIIa), R4a and R4b are individually selected from a C-1 to C-12 linearalkyl.

[0128] In another aspect of this embodiment of structure (VIIIa), R4a and R4b are a C-3 to C-12branched alkyl.

[0129] In another aspect of this embodiment of structure (VIIIa), R4a and R4b are a C-3 to C-12alicyclic alkyl. In one aspect of this embodiment R4a and R4b are cyclopropyl, in another cyclobutyl,in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in another adamantyl, in yetAZ75195PC another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0130] In another aspect of this embodiment said aryl sulfate PAG has structure (VIIIa), where R4aand R4bare independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 toC-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3is a C-1 to C-4 alkyl.

[0131] In yet another aspect of this embodiment said aryl sulfate PAG has structure (VIIIa-1). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (VIIIa-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (VIIIa-3). In yet another aspect ofthis embodiment said aryl sulfate PAG has structure (VIIIa-4). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (VIIIa-5). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (VIIIa-6). In yet another aspect of this embodiment said arylsulfate PAG has structure (VIIIa-7). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (VIIIa-8), as follows:AZ75195PC

[0132] In another aspect of the embodiments of the compositions described above Component A,wherein said aryl sulfate PAG, has structure (VIII) it more specifically has structure (VIIIb). In oneaspect of this embodiment R1a and R2b are individually selected from a C-1 to C-12 alkoxy, inanother aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspectof this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another aC-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least oneof R1aand R2bis selected from a C-1 to C-12 alkoxy, and at least one of R1aand R2bis H. In another aspect of this embodiment at least one of R1aand R2bare individually selected from is selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1aand R2bare H.

[0133] In another aspect of this embodiment of structure (VIIIb), Xa and Xb are individuallyselected from F, Cl and I, in one Xaand Xbaspect are F, in another Xaand Xbare Cl and in yetAZ75195PCanother Xa and Xb are Br. In another aspect of this embodiment of structure (VIIIb), Xa and Xb areindividually selected from F, Cl and Br. In another aspect of this embodiment of structure (VIIIb),R4is selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 to C-4 alkylene, Reth1is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3 is a C-1 to C-4alkyl.

[0134] In another aspect of this embodiment of structure (VIIIb), R4 is a C-1 to C-12 linear alkyl.In another aspect of these embodiment of structure (VIIIb), R4is a C-3 to C-12 branched alkyl. In another aspect of this embodiment of structure (VIIIb), R4is C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R4 is cyclopropyl, in another cyclobutyl, in another cyclohexyl, inanother cycloheptyl, in another cyclooctyl, in another adamantyl, in yet anotherTetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl).

[0135] In another aspect of this embodiment of structure (VIIIb), when R4, is said alkyl ether moietyhaving structure –Reth-O-(Reth1-O)neth-Reth3, it is one where Reth3is a C-1 to C-3 alkyl, in another aspect it is a C-1 to C-2 alkyl and in yet another embodiment it is methyl. In another aspect of theseembodiments Reth is a linear C-2 to C-4 alkylene, in another aspect it is a C-2 to C-3 alkylene, inyet another embodiment it is ethylene. In another aspect of these embodiments Reth1 is a linear C-2to C-4 alkylene, in another embodiment it is a C-2 to C-3 alkylene and in yet another embodiment it is ethylene. In another aspect of these embodiments neth is an integer from 2 to 5, in anotherembodiment this integer is from 2 to 3, in yet another embodiment it is 2. In another aspect of theseembodiments Reth3is a C-1 to C-3 alkylene, in another aspect it is a C-1 to C-2 alkyl, in yet another it is methyl.

[0136] In yet another aspect of this embodiment said aryl sulfate PAG has structure (VIIIb-1). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (VIIIb-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (VIIIb-3). In yet another aspect ofthis embodiment said aryl sulfate PAG has structure (VIIIb-4). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (VIIIb-5). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (VIIIb-6). In yet another aspect of this embodiment said arylsulfate PAG has structure (VIIIb-7). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (VIIIb-8), as follows:AZ75195PC

[0137] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (IX). In one aspect of this embodiment R1a and R2b are individuallyselected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at leastAZ75195PC one of R1aand R2bis H. In another aspect of this embodiment at least one of R1aand R2bare individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In anotherembodiment R1a and R2b are H. In another aspect of this embodiment said aryl sulfate PAG hasstructure (IXa) or (IXb).

[0138] In one aspect of this embodiment R5 is a C-1 to C-12 linear alkyl. In another aspect of thisembodiment of structure (IXa) or (IXb), R5 is a C-3 to C-12 branched alkyl. In another aspect ofthis embodiment of structure (IXa) or (IXb), R5 is C-3 to C-12 alicyclic alkyl. In one aspect of thisembodiment R5 is cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl,in another cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7-methanoindenyl). In another aspect of this embodiment R5is an unsubstituted aryl. In another aspect of this embodiment R5is a substituted aryl.

[0139] In yet another aspect of this embodiment said aryl sulfate PAG has structure (IXa-1). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (IXa-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (IXb). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (IXb-1). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (IXb-2), as follows:

[0140] In one aspect of the embodiments of the compositions described above Component A, saidAZ75195PCaryl sulfate PAG, has structure (X). In one aspect of this embodiment R1a and R2b are individuallyselected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkoxy, and at least one of R1aand R2bis H. In another aspect of this embodiment at least one of R1aand R2bare individually selected from is selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1aand R2bis H, in a more specific aspect of this embodiment said alkyl is t-butyl or t- amyl. In another embodiment R1aand R2bare H.

[0141] In another aspect of this embodiment said aryl sulfate PAG has structure (Xa), where Xa,Xb, Xc, Xd are independently a halide selected from the group consisting of F, Cl and Br. In oneembodiment X, Xa, Xb, Xc and Xd are F. In another embodiment X, Xa, Xb, Xc and Xd are Cl. Inanother embodiment X, Xa, Xb, Xc and Xd are Br.

[0142] In another aspect of this embodiment said aryl sulfate PAG has structure (Xa). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (Xa-1). In yet another aspectof this embodiment said aryl sulfate PAG has structure (Xa-2). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (Xa-3). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (IXa-4), as follows:AZ75195PC

[0143] In one aspect of the embodiments of the compositions described above wherein ComponentA, is said aryl sulfate PAG of structure (X) it more specifically has structure (Xb). In one aspectof this embodiment R1a and R2b are individually selected from a C-1 to C-12 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C- 7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a and R2b is H. In another aspect of this embodiment at least one of R1a and R2b are individually selected from is selected from a C- 1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, inanother a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment atleast one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkyl and at least one of R1a and R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1a and R2b are H. In one aspect of this embodiment X is F. In another aspect of this embodiment X is Cl. In another aspect of this embodiment X is Br.

[0144] In yet another aspect of this embodiment said aryl sulfate PAG has structure (Xb-1). In yetanother aspect of this embodiments said aryl sulfate PAG has structure (Xb-2). In yet anotheraspect of this embodiment said aryl sulfate PAG has structure (Xb-3). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (Xb-4). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (Xb-5). In yet another aspect of this embodiment said arylsulfate PAG has structure (Xb-6). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (IXb-7). In yet another aspect of this embodiment said aryl sulfate PAG has structure(IXb-8), as follows:AZ75195PC

[0145] In one aspect of the embodiments of the compositions described above wherein ComponentA, is said aryl sulfate PAG of structure (X) it more specifically has structure (Xc) where Xa and Xbare independently a halide selected from the group consisting of F, Cl and Br. In one aspect of thisembodiment R1a and R2b are individually selected from a C-1 to C-12 alkoxy, in another aspect ofthis embodiment they are selected from a C-1 to C-11 alkoxy, in another aspect of this embodimentthey are selected from a C-1 to C-10 alkoxy, in another aspect of this embodiment they are selectedfrom a C-1 to C-9 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, inanother a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, inanother a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a and R2b is H. In another aspect of thisembodiment at least one of R1a and R2b are individually selected from a C-1 to C-12 alkyl, in anotheraspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t- butyl or t-amyl. In another aspect of this embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkyl and at least one of R1aand R2bis H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1a and R2b are H. In one aspect of thisAZ75195PC embodiment Xaand Xbare F. In another aspect of this embodiment Xaand Xbare Cl. In another aspect of this embodiment Xaand Xbare Br.

[0146] In yet another aspect of this embodiment said aryl sulfate PAG has structure (Xc-1). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (Xc-2). In yet another aspectof this embodiment said aryl sulfate PAG has structure (Xc-3). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (Xc-4), as follows:

[0147] In one aspect of the embodiments of the compositions described above wherein ComponentA, is said aryl sulfate PAG of structure (X) it more specifically has structure (Xd) where Xa and Xbare independently a halide selected from the group consisting of F, Cl and Br.

[0148] In one aspect of this embodiment R1a and R2b are individually selected from a C-1 to C-12alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected froma C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another aC-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a and R2b is H. In another aspect of this embodiment at least one of R1a and R2b are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one ofthem is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1aand R2bAZ75195PC is selected from a C-1 to C-12 alkyl and at least one of R1aand R2bis H, in a more specific aspectof this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1a and R2b are H.

[0149] In one embodiment X, Xa and Xb are F. In another embodiment X, Xa and Xb are Cl. Inanother embodiment X, Xa and Xb are Br.

[0150] In yet another aspect of this embodiment said aryl sulfate PAG has structure (Xd-1). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (Xd-2). In yet another aspectof this embodiment said aryl sulfate PAG has structure (Xd-3). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (Xd-4), as follows:

[0151] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (XI). In one aspect of this embodiment R1a and R2b are individuallyselected from a C-1 to C-12 alkoxy, in another aspect of this embodiment they are selected from aC-1 to C-11 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-10alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-9 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-8 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in anothera C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In anotheraspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a and R2b is H. In another aspect of this embodiment at least one of R1a and R2b are individually selected from a C-1 to C-12 alkyl, in another aspect of this embodiment it is selectedAZ75195PC from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In anotheraspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of thisembodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkyl and at least one of R1aand R2b is H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1a and R2b are H.

[0152] In yet another aspect of this embodiment said aryl sulfate PAG has structure (XIa). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (XIb).

[0153] In one aspect of the embodiments of the compositions described above Component A, saidaryl sulfate PAG, has structure (XII).

[0154] In one aspect of this embodiment R1a and R2b are individually selected from a C-1 to C-12alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-11 alkoxy, in anotheraspect of this embodiment they are selected from a C-1 to C-10 alkoxy, in another aspect of thisembodiment they are selected from a C-1 to C-9 alkoxy, in another aspect of this embodiment theyare selected from a C-1 to C-8 alkoxy, in another aspect of this embodiment they are selected from a C-1 to C-7 alkoxy, in another a C-1 to C-6 alkoxy, in another a C-1 to C-5 alkoxy, in another a C-1 to C-4 alkoxy, in another a C-1 to C-4 alkyl. In another aspect of this embodiment at least one of R1a and R2b is selected from a C-1 to C-12 alkoxy, and at least one of R1a and R2b is H. In anotheraspect of this embodiment at least one of R1a and R2b are individually selected from a C-1 to C-12alkyl, in another aspect of this embodiment it is selected from a C-1 to C-7 alkyl, in another a C-1 to C-6 alkyl, in another a C-1 to C-5 alkyl. In another aspect of this embodiment at least one of them is either t-butyl or t-amyl. In another aspect of this embodiment at least one of R1aand R2bis selected from a C-1 to C-12 alkyl and at least one of R1aand R2bis H, in a more specific aspect of this embodiment said alkyl is t-butyl or t-amyl. In another embodiment R1a and R2b are H.

[0155] In one embodiment R6 is a C-1 to C-12 linear alkyl. In another aspect of this embodimentof structure (XII), R6 is a C-3 to C-12 branched alkyl. In another aspect of this embodiment of structure (XII), R6is a C-3 to C-12 alicyclic alkyl. In one aspect of this embodiment R6isAZ75195PC cyclopropyl, in another cyclobutyl, in another cyclohexyl, in another cycloheptyl, in another cyclooctyl, in another adamantyl, in yet another Tetrahydrodicyclopentadienyl (octahydro-1H-4,7- methanoindenyl).

[0156] In yet another aspect of this embodiment said aryl sulfate PAG has structure (XIIa). In yetanother aspect of this embodiment said aryl sulfate PAG has structure (XIIb). In yet another aspectof this embodiment said aryl sulfate PAG has structure (XIIa-1). In yet another aspect of thisembodiment said aryl sulfate PAG has structure (XIIb-1). In yet another aspect of this embodimentsaid aryl sulfate PAG has structure (XIIa-2). In yet another aspect of this embodiment said arylsulfate PAG has structure (XIIb-2). In yet another aspect of this embodiment said aryl sulfate PAGhas structure (XIIa-3). In yet another aspect of this embodiment said aryl sulfate PAG has structure(XIIb-3). In yet another aspect of this embodiment said aryl sulfate PAG has structure (XIIa-4). Inyet another aspect of this embodiment said aryl sulfate PAG has structure (XIIb-4).AZ75195PCComponent C: Acid quencher Additive

[0157] In one aspect of said compositions described above Component C: at least one acid quencheradditive having a pKahigher than -0.5 and a boiling point of at least 150ºC at 1 atmosphere, saidacid quencher may be selected from an amine, and amide, a triarylsulfonium carboxylate, atetraalkylammonium carboxylate salt, a trialkylammonium carboxylate salt, a dialkylammoniumcarboxylate salt, a monoalkylammonium salt, and mixtures of these. In another aspect of thisembodiment, said acid quencher is selected from amine. In another aspect of this embodiment saidacid quencher is a tetraalkylammonium carboxylate salt. In another aspect of this embodiment saidbasic an acid quencher is a trialkylammonium carboxylate. In another aspect of this embodimentsaid basic an acid quencher is a triarylsulfonium carboxylate. In one aspect it is a mixtures of anamine, a triarylsulfonium carboxylate. In another aspect it is a mixture of an amine, and atriaalkylammonium carboxylate salt.

[0158] In another aspect of said acid quencher additive is selected from the group consisting ofcompounds having structures (C-1), (C-2), (C-3) (C-4), (C-5), (C-6), (C-7), (C-8), (C-9), and (C-10) as follows:In the acid quencher additive of structure (C-1) Rq1, Rq2, Rq3 are independently a C-1 to C-4 alkyl,L1, L1a, L2, L2a, L3 L3a are independently a linear C-2 to C-4 alkylene spacer or a mixture ofcompounds from this group.In the acid quencher additive of structure (C-2), Rq4 is a C-1 to C-4 alkyl, and Rac1, Rac2 and Rac3are independently selected from H, a C-1 to C-12 alkyl and a C-1 to C-12 alkoxy.In the acid quencher additive of structure (C-3), Rq5, Rq6, Rq7 are independently a C-1 to C-4 alkyl.In the acid quencher additive of structure (C-4), L4, L5 and L6 are independently a linear C-2 to C-4 alkylene spacer.In the acid quencher additive of structure (C-5), Rc3 is a C-1 to C-4 alkyl and Rc1 and Rc2 areindependently selected from a C-5 to C-8 cyclic alkyl.In the acid quencher additive of structure (C-6), Rc4, Rc5, and Rc6 are independently selected froma C-4 to C-8 alkyl.AZ75195PCIn the acid quencher additive of structure (C-7), Rb1 is C-1 to C-20 saturated alkyl chain or a C-2 toC-20 unsaturated alkyl chain.In the acid quencher additive of structure (C-8), Rb2 is either H, or a C-1 to C-20 alkyl.In the acid quencher additive of structure (C-9), Rb3 is a C-1 to C-20 alkyl.In the acid quencher additive of structure (C-10), Rb4 is H or a C-1 to C-20 alkyl.In the acid quencher additive of structure (C-11), Rb5, Rb6, Rb7, Rb8 are individually selected fromH or a C-1 to C-20 alkyl.In the acid quencher additive of structure (C-12), Rb9,Rb10, Rb11 are individually selected from H ora C-1 to C-20 alkyl.In the acid quencher additive of structure (C-13), Rb12 is selected from H or a C-1 to C-20 alkyl.In the acid quencher additive of structure (C-14), Rq8 is either a C-1 to C-20 alkyl, and Rb13 is a C-1 to C-8 alkyl, Rb14, Rb15 and Rb16 are individually selected from H, a C-1 to C-8 unsubstituted alkyl,or a C-1 to C-8 unsubstituted alkyl.In the acid quencher additive of structure (C-15), Rq9 is a direct valence bond or a C-1 to C-6alkylene and Rb13 is a C-1 to C-8 alkyl, Rb14, Rb15 and Rb16 are individually selected from H, a C-1to C-8 unsubstituted alkyl, or a C-1 to C-8 unsubstituted alkyl.In the acid quencher additive of structure (C-16), Rq9 is a direct valence bond or a C-1 to C-6alkylene and Rb13 is a C-1 to C-8 alkyl, Rb14, Rb15 and Rb16 are individually selected from H a C-1to C-8 unsubstituted alkyl, or a C-1 to C-8 unsubstituted alkyl.AZ75195PC

[0159] Specific non limiting examples of structures (C-14) (C-15) and (C-16) aretrialkylalkylammonium and benzyldialkylammonium salt where these are selected fromtrimethylammonium, triethylammonium, tripropylammonium, tributylammonium, tripentylammonium, trihexylammonium, triheptylammonium, trioctylammonium, benzyldimethylammonium, benzyldiethylammonium, benzyldipropylammonium, benzyldibutylammonium. and the carboxylate moiety may be selected from formate, acetate, propionate, butyrate, pentanoate, hexanoate, heptanoate, octanoate, cyclohexanecarboxylate, andthe like. In one aspect of this embodiment said trialkylammonium salt of an aliphatic carboxylicacid is selected from the salts wherein the trialkylammonium moiety is selected from trimethylammonium, triethylammonium, tripropylammonium, tributylammonium, tripentylammonium, and benzyldimethylammonium.

[0160] In structure (C-14) specific examples of carboxylates are acetate, propionate, butyrate,pentanoate and cyclohexylcarboxylate. Specific non limiting examples are for instanceAZ75195PC trimethylammonium acetate, tributylammonium acetate and the like.

[0161] In structures (C-15) these mono trialkylammonium or benzyltriakyl ammonium saltsformed with a dicarboxylic acid are ones formed by oxalic acid, malonic acid, succinic acid oradipic acid. Specific examples non-limiting examples are for instance are mono-(triethylammonium) oxalate, mono-(trimethylammonium) oxalate and the like.

[0162] In structures (C-16) these di carboxylate salts may be ones formed by oxalic acid,malonic acid, succinic acid or adipic acid. Specific non limiting examples are for instance are di-(triethylammonium) oxalate, di-(trimethylammonium) oxalate and the like.

[0163] In one embodiment of the above described positive working photosensitivecompositions, said acid quencher is a bis[trialkylammonium] salt of an aliphatic dicarboxylic acid,non-limiting examples of such salts are ones wherein the bis[trialkylammonium] moiety is selected from bis[trimethylammonium], bis[triethylammonium], bis[tripropylammonium], bis[tributylammonium], bis[tripentylammonium], bis[trihexylammonium], bis[triheptylammonium], bis[trioctylammonium], bis-[benzyldimethylammonium], bis- [benzyldipropylammonium], bis-[benzyldibutylammonium] and the like; and wherein the aliphaticdicarboxylate moiety may be chosen from oxalate, malonate, succinate, adipate, heptadionate,octanedioate, nonanedioate, fumarate, maleate, glutaconate, itaconate, and the like. In one aspect of this embodiment said bis[trialkylammonium] salt of an aliphatic dicarboxylic acid is selected from the salts wherein the bis[trialkylammonium] moiety is selected from bis[trimethylammonium], bis[triethylammonium], bis[tripropylammonium], bis[tributylammonium], bis[tripentylammonium], and bis[benzyldimethylammonium], and the aliphatic dicarboxylate is selected from oxalate, malonate, succinate, adipate, and heptadionate.

[0164] In one embodiment of the above-described positive working photosensitivecompositions, said acid quencher is a bis[trialkylammonium] oxalate.

[0165] In one embodiment of the above-described positive working photosensitivecompositions, said acid quencher is a bis[trialkylammonium] salt of an aliphatic dicarboxylic acidit is selected from the salts wherein the bis[trialkylammonium] moiety is selected from bis[trimethylammonium], bis[triethylammonium], bis[tripropylammonium], bis[tributylammonium], bis[tripentylammonium], and bis[benzyldimethylammonium], and the dicarboxylate is oxalate.Component D: Organic Spin Casting Solvent ComponentAZ75195PC

[0166] In any one of the above described composition said Component D, said organic spin castingis any suitable solvent for dissolving the above-described photoresist compositions includingglycol ether derivative such as ethyl cellosolve, methyl cellosolve, propylene glycol monomethyl ether (PGME), diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol dimethyl ether, propylene glycol n-propyl ether, or diethylene glycol dimethyl ether; a glycol ether ester derivative such as ethyl cellosolve acetate, methyl cellosolve acetate, or propylene glycol monomethyl ether acetate (PGMEA); carboxylates such as ethyl acetate, n-butyl acetate and amyl acetate; carboxylates of di-basic acids such as diethyloxylate and diethylmalonate; dicarboxylates of glycols such as ethylene glycol diacetate and propylene glycol diacetate; and hydroxy carboxylates such as methyl lactate, ethyl lactate (EL), ethyl glycolate, and ethyl-3- hydroxy propionate; a ketone ester such as methyl pyruvate or ethyl pyruvate; an alkoxycarboxylic acid ester such as methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, ethyl 2-hydroxy-2- methylpropionate, or methylethoxypropionate; a ketone derivative such as methyl ethyl ketone, acetyl acetone, cyclopentanone, cyclohexanone or 2-heptanone; a ketone ether derivative such as diacetone alcohol methyl ether; a ketone alcohol derivative such as acetol or diacetone alcohol; a ketal or acetal like 1,3 dioxalane and diethoxypropane; lactones such as butyrolactone; an amide derivative such as dimethylacetamide or dimethylformamide, anisole, and mixtures thereof. Forexample, the organic spin casting solvent can be selected from a glycol ether derivative, a glycolether ester derivative, an alkyl carboxylate, an alkyl carboxylates of di-basic carboxylic acid, analkyl dicarboxylates, a alkyl ester of a hydroxyalkylcarboxylic acid, a ketone ester, a ketone, a ketone ether, a ketone alcohol, a ketal, an acetal and a lactones, an amide and mixtures thereof. Optional Component E: Surfactant

[0167] Surfactants which are not fluorinated are typically compounds / polymers containing siliconcompounds or long chain alkyls and polyglycolic moiety which can assist in forming good uniformphotoresist coatings. Examples of the surfactant that can be used in the present disclosed andclaimed subject matter include (I) anionic surfactants, (II) cationic surfactants or (III) nonionicsurfactants, and more particularly (I) alkyl sulfonate, alkyl benzene sulfonic acid and alkyl benzene sulfonate, (II) lauryl pyridinium chloride and lauryl methyl ammonium chloride and (III) polyoxyethylene octyl ether, polyoxyethylene lauryl ether, polyoxyethylene acetylenic glycol ether and organic siloxane surfactants (for example, KF-53 and KP341 (Shin-Etsu Chemical)). Thesesurfactants can be used alone or in combination of two or more of these. The content of theAZ75195PCsurfactant (Component E) based on Component A is preferably more than 0 weight % up to 10weight %; more preferably from 0.001 to about 10 weight %.Optional Component F: Additional PAGs

[0168] Optional PAGs may include any of the following provided that these do not contain anyfluoroalkyl or perfluoroalkyl moieties: (i) onium (not including ammonium) salts of the formula (P1a), (P1b), (ii) diazomethane derivatives of the formula (P2), (iii) glyoxime derivatives of the formula (P3), (iv) bis-sulfone derivatives of the formula (P4), (v) sulfonic acid esters of N-hydroxyimide compounds of the formula (P5), (vi) β-ketosulfonic acid derivatives, (vii) disulfone derivatives, (viii) nitrobenzylsulfonate derivatives, (ix) sulfonate derivatives, (x) benzyloxysulfonylbenzene derivatives of the formula (P6) These onium salts are described in detail as follows:

[0169] (i) Onium salts of structures (P1a) or (P1b):(P1a) (P1b) Wherein in structure (P1a) or (P1b), Ar is an unsubstituted or substituted aryl group of 6 to 20 carbon atoms, which does not contain any fluoroalkyl or perfluoroalkyl moieties; R10band R10cindependently represent unsubstituted or substituted straight, branched or cyclic alkyl, alkenyl, aryl groups of 6 to 20 carbon atoms, aralkyl or aryloxoalkyl groups of 7 to 12 carbon atoms, the straight, branched or cyclic alkyl or alkenyl groups optionally containing one or more O atoms but which do not contain any fluoroakyl or perfluoroalkyl moiety. Also, R10band R10c, taken together, may form a ring. R10band R10ceach are alkylene groups of 1 to 6 carbon atoms when they form a ring.A‾ is an anion of an acid having a pKa less than 1, which does not contain any fluoroalkyl orperfluoroalkyl moieties such as for example tosylate, benzenesulfonate, 4-fluorobenzenesulfonate, and 1,2,3,4,5-pentafluorobenzenesulfonate, alkylsulfonate ions such as mesylate andAZ75195PC butanesulfonate.

[0170] (ii) diazomethane derivatives of structure (P2),Wherein in Structure (P2), R15and R16independently represent unsubstituted or substituted straight, branched or cyclic alkyl optionally containing one or more O atoms, or brominated or chlorinatedalkyl groups of 1 to 12 carbon atoms, unsubstituted or substituted aryl or brominated aryl groupsor chlorinated aryl group of 6 to 20 carbon atoms, or unsubstituted or substituted aralkyl groups of7 to 12 carbon atoms, provide that none of these contain any fluoroalkyl or perfluoroakyl moieties.

[0171] (iii) glyoxime derivatives of Structure (P3),Wherein in structure (P3), R17, R18, and R19independently represent unsubstituted or substituted straight, branched or cyclic alkyl or halogenated alkyl groups of 1 to 12 carbon atoms, unsubstitutedor substituted aryl or brominated or chlorinated aryl groups of 6 to 20 carbon atoms, or unsubstitutedor substituted aralkyl groups of 7 to 12 carbon atoms. Also, R18 and R19, taken together, may form a ring. R18 and R19 each are unsubstituted or substituted straight or branched alkylene groups of 1to 6 carbon atoms when they form a ring, provided than none of these moieties contain fluoroalkylor perfluoroalkyl moieties.

[0172] (iv) bis-sulfone derivatives of structure (P4),Wherein in Structure (P4) R10bis as defined above.

[0173] (v) sulfonic acid esters of N-hydroxyimide compounds of structure (P5)AZ75195PC Wherein in structure (P5) R20is an arylene group of 6 to 10 carbon atoms, alkylene group of 1 to 6 carbon atoms, or alkenylene group of 2 to 6 carbon atoms wherein some or all of the hydrogen atoms may be replaced by straight or branched alkyl or alkoxy groups of 1 to 4 carbon atoms, nitro, acetyl, or phenyl groups. R21 is a straight, branched or cyclic alkyl group of 1 to 8 carbon atoms, alkenyl, alkoxyalkyl, phenyl or naphthyl group wherein some or all of the hydrogen atoms may be replaced by alkyl or alkoxy groups of 1 to 4 carbon atoms, phenyl groups (which may have substituted thereon an alkyl or alkoxy of 1 to 4 carbon atoms, nitro, or acetyl group), hetero- aromatic groups of 3 to 5 carbon atoms, or chlorine atoms, provided than none of these moieties contain fluoroalkyl or perfluoroalkyl moieties.

[0174] (x) benzyloxysulfonylbenzene derivatives of Structure (P6)O R10hS OCH2R10jO (P6) Wherein in Structure (P6), R10hand R10jindependently stand for the same thing as R10b.Compositions: Detailed Descriptions Detailed Description: Composition 1

[0175] In another aspect of the above described composition wherein said Component B is saidabove described resin comprising repeat units derived from 4-hydroxystyrene it is a polymerhaving structure (B-1), which comprises repeat units of structure (Ip), (IIp) and (IIIp), where R1p, R2p, and R3pare individually selected from a C-1 to C-6 alkyl, np is 0, 1, 2 or 3, and R4pis a C-1 to C-4 alkyl, and R5pis H or a methyl, and k, l and m are the number of repeat units.

[0176] In one embodiment of said composition, comprising Component B, the polymer of structure(B-1), the mole % of repeat unit of structure (Ip) ranges from about 47.5 mole % to about 71.3AZ75195PC mole %, the mole % of structure (IIp) ranges from about 15.3 mole % to about 22.9 mole % and structure (IIIp) ranges from about 17.2 mole % to about 25.8 mole %, and further that the sum of the mole % values of the repeat unit of structure (Ip), the repeat unit of structure (IIp) and the repeat units of structure (IIIp), adds up to 100 mole %.

[0177] In another embodiment of said composition comprising Component B the polymer ofstructure (B-1), the mole % of repeat unit of structure (Ip) ranges from about 53.46 mole % to about65.34 mole %, the mole % of structure (IIp) ranges from about 17.19 mole % to about 21.01 mole % and structure (IIIp) ranges from about 19.35 mole % to about 23.65 mole %, and further that the sum of the mole % values of the repeat unit of structure (Ip), the repeat unit of structure (IIp) the repeat units of structure (IIIp), adds up to 100 mole %.

[0178] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the mole % of repeat unit of structure (Ip) ranges from about 55.8 mole % to about63.0 mole %, the mole % of structure (IIp) ranges from about 18.0 mole % to about 20.2 mole % and structure (IIIp) ranges from about 20.2 mole % to about 22.8 mole %, and further that the sum of the mole % values of the repeat unit of structure (Ip), the repeat unit of structure (IIp) and the repeat units of structure (IIIp) adds up to 100 mole %.

[0179] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the mole % of repeat unit of structure (Ip) ranges from about 57.0 mole % to about61.8 mole %, the mole % of structure (IIp) ranges from about 18.3 mole % to about 19.9 mole % and structure (IIIp) ranges from about 20.6 mole % to about 22.4 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0180] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the mole % of repeat unit of structure (Ip) ranges from about 58.2 mole % to about60.6 mole %, the mole % of structure (IIp) ranges from about 18.7 mole % to about 19.5 mole % and structure (IIIp) ranges from about 21.1 mole % to about 21.9 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0181] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the mole % of repeat unit of structure (Ip) ranges from about 58.8 mole % to about60.0 mole %, the mole % of structure (IIp) ranges from about 18.9 mole % to about 19.3 mole %AZ75195PC and structure (IIIp) ranges from about 21.3 mole % to about 21.7 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0182] In one embodiment of said composition, comprising Component B, the polymer of structure(B-1), In another embodiment of said Component B which is the polymer of structure (B-1), themole % of repeat unit of structure (Ip) ranges from about 58.0 mole % to about 60.0 mole %, the mole % of structure (IIp) ranges from about 18.5 mole % to about 20.5 mole % and structure (IIIp) ranges from about 21.3 mole % to about 21.7 mole %, and further that the sum of the mole %values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit ofstructure (IIIp) adds up to 100 mole %.

[0183] In one embodiment of said composition, comprising Component B, the polymer of structure(B-1), the mole % of repeat unit of structure (Ip) is about 59.4 mole %, the mole % of structure (IIp)is about 19.1 mole % and structure (IIIp) is about 21.5 mole % and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit ofstructure (IIIp) adds up to 100 mole %.

[0184] In one embodiment of said composition, comprising Component B, the polymer of structure(B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer of structure (B-1)to the moles of component A, said PAG, is from about 68.8 to about 103.2.

[0185] In one embodiment of said composition, comprising Component B, the polymer of structure(B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer of structure (B-1)to the moles of component A, said PAG, is from about 77.5 to about 94.7.

[0186] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer ofstructure (B-1) to the moles of component A, said PAG, is from about 80.9 to about 91.2.

[0187] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer ofstructure (B-1) to the moles of component A, said PAG, is from about 82.6 to about 89.5.

[0188] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer ofstructure (B-1) to the moles of component A, said PAG, is from about 84.3 to about 87.8.

[0189] In another embodiment of said composition, comprising Component B, the polymer ofAZ75195PCstructure (B-1), the ratio of the moles of the repeat unit of structure (IIIp) in said polymer ofstructure (B-1) to the moles of component A, said PAG, is from about 85.2 to about 86.9.

[0190] In one embodiment of said composition, comprising Component B, preferably the polymerof structure (B-1), the mole ratio of the moles of component A, said PAG to the moles of componentC, said acid quencher is from about 7.8 to about 11.7.

[0191] In another embodiment of said composition, comprising Component B, preferably thepolymer of structure (B-1), the mole ratio of the moles of component A, said PAG to the moles ofcomponent C, said acid quencher is from about 8.8 to about 10.7.

[0192] In another embodiment of said composition, comprising Component B, preferably thepolymer of structure (B-1), the mole ratio of the moles of component A, said PAG to the moles ofcomponent C, said acid quencher is from about 9.2 to about 10.3.

[0193] In another embodiment of said composition, comprising Component B, preferably thepolymer of structure (B-1), the mole ratio of the moles of component A, said PAG to the moles ofcomponent C, said acid quencher is from about 9.4 to about 10.1.

[0194] In another embodiment of said composition, comprising Component B, preferably thepolymer of structure (B-1), the mole ratio of the moles of component A, said PAG to the moles ofcomponent C, said acid quencher is from about 9.6 to about 9.9.

[0195] In another embodiment of said composition, comprising Component B, preferably thepolymer of structure (B-1), the mole ratio of the moles of component A, said PAG to the moles ofcomponent C, said acid quencher is from about 9.7 to about 9.8.

[0196] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1) is one wherein, R4p is methyl and np is 1. In another aspect of this embodiment R5pis methyl. In another aspect of this embodiment R3p, R1pand R2pare methyl.

[0197] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1) is one wherein, R4p is methyl and np is 1. In another aspect of this embodiment R5pis H. In another aspect of this embodiment R3p, R1p and R2p are methyl.

[0198] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1) is one wherein np is 0. In another aspect of this embodiment R5p is methyl. Inanother aspect of this embodiment R5pis H. In another aspect of this embodiment R3p, R1pand R2pare methyl.

[0199] In another embodiment of said composition, comprising Component B, the polymer ofAZ75195PCstructure (B-1) is one wherein said repeat unit of structure (IIp) has structure (IIpa) and said repeatunit of structure (IIIp) has structure (IIIpa),

[0200] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1) as described above, component C said acid quencher is an amine. In another aspectof this embodiment said acid quencher is at least one acid quencher having structure (C-1), whereinRq1, Rq2, Rq3 are independently a C-1 to C-4 alkyl, L1, L1a, L2, L2a, L3, L3a are independently alinear C-2 to C-4 alkylene spacer. In another aspect of this embodiment said acid quencher at leastone acid quencher of structure (C-1), wherein Rq1, Rq2, Rq3 are the same C-1 to C-4 alkyl, L1, L2and L3 are the same linear C-2 to C-4 alkylene spacer and L1a, L2a and L3a are the same linear C-2to C-4 alkylene spacer. In another aspect of this embodiment said acid quencher has structure (C-1a)

[0201] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-1) has an Mw of about 8,000 to about 27,000 and a polydispersity of 1.0 to about 2.5.In another aspect of this embodiment, it has an Mw of about 12,684 to about 13,884 and apolydispersity of about 1.77 to about 2.17.AZ75195PC Detailed Description: Composition 2

[0202] In another aspect of the above described composition wherein said Component B is saidabove described resin comprising repeat units derived from 4-hydroxystyrene it is a polymerhaving structure (B-2) which comprises repeat units of structure (Ip) (IVp) and (IIIp), where R1p,R2p, R3p, R6p, R7p and R8p are individually selected from a C-1 to C-6 alkyl, R5p is H or a C-1 to C- 4 alkyl, ka, la, and ma are the number of repeat units,

[0203] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), Component C, said acid quencher is at least one amine. In another aspect of thisembodiment said acid quencher is an amine having structure (C-4), wherein L4, L5 and L6 areindependently a linear C-2 to C-4 alkylene spacer. In another aspect of this embodiment, saidcomposition additionally comprises as an acid quencher photodecomposable base an acid quencherwhich is a triarylsulfonium carboxylate, in one aspect of this embodiment said triarysulfoniumcarboxylate has structure (C-2), wherein Rq4 is a C-1 to C-4 alkyl, and Rac1, Rac2 and Rac3 areindependently selected from H, a C-1 to C-12 alkyl and a C-1 to C-12 alkoxy. In another aspect of this embodiment, said composition additionally comprises an acid quencher which is at least oneamide. In another aspect this embodiment, said composition additionally comprises an acidquencher of structure (C-3), wherein Rq5, Rq6, Rq7 are independently a C-1 to C-4 alkyl.AZ75195PC

[0204] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 52.8 mole % to about 79.9 mole %, the mole % of structure (IVp) ranges from about 17.6 mole % to about 26.4 mole % and structure (IIIp) ranges from about 9.6 mole % to about 14.4 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0205] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 59.4 mole % to about 72.6 mole %, the mole % of structure (IVp) ranges from about 21.12 mole % to about 24.2 mole % and structure (IIIp) ranges from about 10.8 mole % to about 13.2 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0206] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 62.4 mole % to about 70.0 mole %, the mole % of structure (IVp) ranges from about 20.7 mole % to about 23.3 mole % and structure (IIIp) ranges from about 11.3 mole % to about 12.7 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0207] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 63.4 mole % to about 68.6 mole %, the mole % of structure (IVp) ranges from about 21.1 mole % to about 22.9 mole % and structure (IIIp) ranges from about 11.5 mole % to about 12.5 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0208] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 64.7 mole % to aboutAZ75195PC 67.3 mole %, the mole % of structure (IVp) ranges from about 21.6 mole % to about 22.4 mole % and structure (IIIp) ranges from about 11.8 mole % to about 12.2 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0209] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 65.3 mole % to about 66.7 mole %, the mole % of structure (IVp) ranges from about 21.8 mole % to about 22.2 mole % and the mole % of structure (IIIp) ranges from about 11.9 mole % to about 12.1 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0210] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole % of repeat unit of structure (Ip) ranges from about 65 mole % to about 67 mole %, the mole % of structure (IVp) ranges from about 21.4 mole % to about 23.4 mole % and structure (IIIp) ranges from about 11.0 mole % to about 13.0 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

[0211] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in thispolymer, to the moles of component A, said PAG, is from about 38.5 to about 57.8.

[0212] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is from about 43.3 to about 53.0.

[0213] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is from about 45.3 to about 51.1.

[0214] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is from about 46.3 to about 50.1.

[0215] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is from about 47.2 to about 49.1.AZ75195PC

[0216] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is from about 47.7 to about 48.2.

[0217] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the ratio of the total moles of the repeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG, is about 48.2.

[0218] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 1.84 to about 2.76, the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-2) is from about the mole ratio of component A,said PAG, to component C, said acid quencher of structure (C-3) is from about 0.093 to about 0.139,and the mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) is from about 3.83 to about 5.74.

[0219] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2),the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 2.07 to about 2.53, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-3) is from about 0.105 to about 0.128, and themole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.31 to about 5.26.

[0220] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 2.16 to about 2.43, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-3) is from about 0.109 to about 0.123, and themole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.50 to about 5.07.

[0221] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 2.20 to about 2.39, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-3) is from about 0.111 to about 0.121, and themole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.60 to about 4.98.AZ75195PC

[0222] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2),the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 2.25 to about 2.34, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-3) is from about 0.114 to about 0.119, and themole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.69 to about 4.88.

[0223] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is from about 2.27 to about 2.30, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-3) is from about 0.115 to about 0.126, and themole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.73 to about 4.79.

[0224] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), the mole ratio of component A, said PAG, to component C, said acid quencher ofstructure (C-2) is about 2.29, and the mole ratio of component A, said PAG, to component C, saidacid quencher of structure (C-3) is about 0.116, and the mole ratio of component A, said PAG, tocomponent C, said acid quencher of structure (C-4) is about 4.78.

[0225] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), as described above, said acid quencher of structure (C-2) is one where Rac1 is Hand Rac2and Rac3are both a C-1 to C-12 alkyl. In another embodiment is one where Rac1is H and Rac2and Rac3are both a C-1 to C-12 alkoxy. In another embodiment at least one of Rac1, Rac2are H and Rac3 is a C-1 to C-12 alkyl. In another embodiment at least one of Rac1, Rac2are H andRac3 is a C-1 to C-12 alkoxy. In another embodiment Rac1, Rac2 and Rac3 are a C-1 to C-12 alkyl.In another embodiment Rac1, Rac2 and Rac3 are a C-1 to C-12 alkoxy. In another embodiment Rac1, Rac2 and Rac3 are H. In another embodiment Rq4, is n-butyl. In another embodiment Rq4, is tert-butyl. In another embodiment Rq4, is n-propyl. In another embodiment Rq4, is isopropyl. In another embodiment Rq4, is ethyl. In another embodiment Rq4, is methyl. In another embodimentthe acid quencher of structure (C-2) more specifically has structure (C-2a).AZ75195PC

[0226] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), said acid quencher of structure (C-3) has structure (C-3a),

[0227] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), said acid quencher of structure (C-4) has structure (C4a),

[0228] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), this polymer has an Mw of about 18,815 to about 63,659 and a polydispersity of 1.0 to about 2.5.

[0229] In another embodiment of said composition, comprising Component B, the polymer ofstructure (B-2), is one where said repeat unit of structure (IVp) has structure (IVpa) and said repeat unit of structure (IIIp) has structure (IIIpa),(IVpa) (IIIpa) .AZ75195PC

[0230] In another aspect of the above described composition wherein said Component B is saidabove described resin comprising repeat units derived from 4-hydroxystyrene this component comprises two different polymers of structures (B-3) and (B-4), where R10p, R9pare individually selected from a C-1 to C-4 alkyl, kb, lb are the number of repeat units for polymer (B-4) and kbaand lba are the number of repeat units for polymer (B-4). In one aspect of this embodiment, themole % of the repeat unit of structure (Vp) in the polymer of structure (B-3) and (B-4) are different,where the mole % the repeat unit of structure (Vp) in the polymer of structure (B-3) ranges from about 35 mole % to about 45 mole %, and the mole % of the repeat unit of structure (Vp) in thepolymer structure (B-4) is from about 20 mole % to about 35 mole % and that total mole % ofrepeat units of structure (Vp) in both polymers of structure (B-3) and (B-4), ranges from about 30mole % to about 40 mole %. In one aspect of this embodiment said composition comprises asComponent C at least one amine an acid quencher. Detailed Description: Composition 3

[0231] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4).

[0232] In another aspect of this embodiment, it further comprises as Component C an amine. Inone aspect of this embodiment, it comprises an additional PAG of structure (F-1), where Rd1 andRd2 are individually selected from a C-5 to C-8 alicyclic alkyl.

[0233] In another aspect of this composition said amine has structure (C-5), where Rc3 is a C-1 toC-4 alkyl and Rc1and Rc2are independently selected from a C-5 to C-8 cyclic alkyl.

[0234] In another aspect of this composition, Component C said acid quencher further comprisesat least one triarylsulfonium carboxylate. In one aspect of this embodiment said triarylsulfonium carboxylate has structure (C-2), where Rq4is a C-1 to C-4 alkyl, and Rac1, Rac2 and Rac3 are independently selected from H, a C-1 to C-12 alkyl and a C-1 to C-12 alkoxy.

[0235] In another aspect of this composition, Component C, said acid quencher further comprisesan amide. In one aspect of this embodiment said amide has structure (C-3), where Rq5, Rq6, Rq7 are independently a C-1 to C-4 alkyl.

[0236] In another aspect of this composition, Component C, said acid quencher is a mixture of anamine, a triarylsulfonium carboxylate, and an amide. In one aspect of this embodiment theserespectively have structures (C-5), (C-2) and (C-3)AZ75195PC

[0237] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 28.1 mole % to about 42.12mole %.

[0238] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 31.6 mole % to about 38.6mole %.

[0239] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 33.0 mole % to about 37.2mole %.AZ75195PC

[0240] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 33.7 mole % to about 36.5mole %.

[0241] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 34.4 mole % to about 35.8mole %.

[0242] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said total mole % of repeat units of structure (Vp) in bothpolymers of structure (B-3) and (B-4), independently, range from about 34.7 mole % to about 35.5mole %.

[0243] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said repeat units of structure (Vp), respectively havingnumber of repeat unit lb and lba in polymers of structures (B-3) and (B-4) have structure (Vp-1)

[0244] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said polymer of structure (B-3) and (B-4) have an Mw whichindependently range from about 24,544 to about 16,363 and a polydispersity which independently range from 1 to about 1.35.

[0245] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0260 toAZ75195PC about 0.0389.

[0246] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0291 toabout 0.0357.

[0247] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0305 toabout 0.0344.

[0248] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0311 toabout 0.0337.

[0249] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0318 toabout 0.0331.

[0250] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of component A, said aryl sulfatearyl onium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0321 toabout 0.0328.

[0251] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component A, said aryl sulfate aryl onium salt PAG ranges from about 398to about 597.

[0252] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component A, said aryl sulfate aryl onium salt PAG ranges from about 448to about 547.

[0253] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)AZ75195PCto the mole % of said component A, said aryl sulfate aryl onium salt PAG ranges from about 468to about 528.

[0254] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component A, said aryl sulfate aryl onium salt PAG from about 478 to about518.

[0255] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component A, said aryl sulfate aryl onium salt PAG is from about 488 toabout 508.

[0256] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component A, said aryl sulfate aryl onium salt PAG is from about 493 toabout 503.

[0257] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component F, said PAG of structure (F-1) is from about 12.9 to about 19.4.

[0258] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component F, said PAG of structure (F-1) is from about 14.5 to about 17.8.

[0259] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component F, said PAG of structure (F-1) is from about 15.2 to about 17.1.

[0260] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component F, said PAG of structure (F-1) is from about 15.5 to about 16.8.

[0261] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)to the mole % of said component F, said PAG of structure (F-1) is from about 15.8 to about 16.5.

[0262] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the moles of repeat units of structure (Vp)AZ75195PCto the mole % of said component F, said PAG of structure (F-1) is from about 16.0 to about 16.3.

[0263] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 2.00 to about 1.34,preferably to about 1.38.

[0264] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 1.84 to about 1.50.

[0265] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 1.77 to about 1.57.

[0266] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 1.74 to about 1.61.

[0267] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 1.71 to about 1.65.

[0268] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-2) is from about 1.69 to about 1.66.

[0269] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00845 to about0.012675.

[0270] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00951 to about0.01162.

[0271] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00993 to aboutAZ75195PC 0.03438.

[0272] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03114 to about0.03373.

[0273] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03179 to about0.03308.

[0274] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03211 to about0.0328.

[0275] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.582 to about 2.373.

[0276] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.779 to about 2.175.

[0277] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.859 to about 2.096.

[0278] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.898 to about 2.0567.

[0279] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.938 to about 2.0171.

[0280] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component A, said aryl sulfate arylonium salt PAG ranges to said acid quencher of structure (C-5) is about 1.958 to about 1.997.AZ75195PC

[0281] . In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 61. 9 to about 41.2.

[0282] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 56.7 to about 46.4.

[0283] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 54.6 to about 48.5.

[0284] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 53.6 to about 49.5.

[0285] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 52.6 to about 50.5.

[0286] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-2), is about 52.1 to about 51.0.

[0287] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.260 to about 0.391.

[0288] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.293 to about 0.358.

[0289] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.306 to about 0.345.

[0290] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.313 to about 0.339.

[0291] In another embodiment of said composition, comprising Component B, a mixture of theAZ75195PCpolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.319 to about 0.332.

[0292] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-3), is about 0.322 to about 0.329.

[0293] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 19.28 to about 28.92.

[0294] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 21.69 to about 26.51.

[0295] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 22.65 to about 25.55.

[0296] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 23.14 to about 25.06.

[0297] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 23.62 to about 24.58.

[0298] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of said component F, said PAG of structure(F-1) to said acid quencher of structure (C-5), is from about 23.62 to about 24.58.

[0299] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.399 to about 0.266.

[0300] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.366 to about 0.300.AZ75195PC

[0301] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.352 to about 0.312.

[0302] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.346 to about 0.319.

[0303] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.338 to about 0.325 or about 0.339 to about 0.326.

[0304] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), the mole ratio of the sum of PAG of structure (F-1) and saidaryl sulfate aryl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3)and (C-5) is about 0.335 to about 0.329.

[0305] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said acid quencher of structure (C-2) is one where Rac1 is Hand Rac2 and Rac3 are both a C-1 to C-12 alkyl. In another embodiment is one where Rac1 is H andRac2and Rac3are both a C-1 to C-12 alkoxy. In another embodiment at least one of Rac1, Rac2areH and Rac3 is a C-1 to C-12 alkyl. In another embodiment at least one of Rac1, Rac2 are H and Rac3is a C-1 to C-12 alkoxy. In another embodiment Rac1, Rac2 and Rac3 are a C-1 to C-12 alkyl. Inanother embodiment Rac1, Rac2and Rac3are a C-1 to C-12 alkoxy. In another embodiment Rac1, Rac2 and Rac3 are H. In another embodiment Rq4 is n-butyl. In another embodiment Rq4 is tert- butyl. In another embodiment Rq4 is n-propyl. In another embodiment Rq4 is isopropyl. In anotherembodiment Rq4 is ethyl. In another embodiment Rq4 is methyl. In another embodiment said acidquencher of structure (C-2) more specifically has structure (C-2a).AZ75195PC

[0306] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said acid quencher of structure (C-3) has structure (C-3a).

[0307] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said acid quencher of structure (C-5) has structure (C-5a).

[0308] In another embodiment of said composition, comprising Component B, a mixture of thepolymer of structures (B-3) and (B-4), said component F, said PAG of structure (F-1) has structure(F-1a).Process of a Forming a Positive Image and Use Thereof of Inventive Compositions

[0309] Another aspect of this disclosed and claimed subject matter is the process of forming animage by exposure to radiation, comprising steps ia) to va) with any of the above described and claimed Chemically Amplified Photoresist composition. In this process different types of radiationAZ75195PC may be employed such as 248 nm, 193 nm or EUV. ia) coating any one of the disclosed and claimed compositions, on a substrate, forming a coated film, iia) baking said coated film to form a baked film, iiia) exposing regions of said baked film through a mask with radiation, forming exposed and unexposed regions, iva) baking said radiation exposed film of step iiia), va) developing away the unexposed regions of said radiation exposed and baked film of step iva) forming a positive image on said substrate.

[0310] Another aspect of this disclosed and claimed subject matter is the use of any one of thecompositions described herein for coating a substrate, preferably in a photolithographic process.EXAMPLES Chemicals and Characterization

[0311] All chemicals unless otherwise indicated were purchased from Sigma-Aldrich, Inc. (3050Spruce St., St. Louis, MO 63103).

[0312] P622 polymer is a copolymer of 4-hydroxystyrene, styrene and tert-butyl acrylateP(PHS / S / TBA) obtained commercially from TOHO Chemical industry, Japan. It’s repeat unitcomposition is 59.4 mole % PHS, 19.1 mole % S and 21.5 mole % of TBA. It has an Mw of 13,284and a polydispersity of 1.97.

[0313] C-55 polymer is a copolymer of hydroxystyrene, 4-tert-butoxystyrene, and tert-butylacrylate, P(PHS / PTBST / TBA) from Gun Ei Chemical Industry Ltd in Japan. It has the followingcomposition: 66.0 mole % PHS, 22 mole % PTBST and 12 mole % of TBA. It has an Mw of 30,759and a polydispersity of 1.97.

[0314] Poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene] P(EES / PHS) is a blend of twodifferent commercially available as 30 % solutions in PGMEA available commercially under thename MWP-240HW and MWP-240LW, from Wako Chemical (Japan) where MWP-240HW has acomposition of 41.6 mole % p-(1-ethoxyethoxy)styrene (EES) an Mw of 20,707 and polydispersityof 1.14 and MWP-240HW has a composition of 29.8 mole % EES, an Mwof 20,201 andpolydispersity of 1.11 and are blended to give a average composition of 35.1 mole % EES, anaverage Mw of 20,413 and polydispersity of 1.125.

[0315] All synthetic experiments were carried out under N2 atmosphere. Lithographic experimentsAZ75195PCwere carried out as described in the text.

[0316] A Canon KrF stepper FPA-3000 EX5 was used to expose the resist films of the exampleswhich was provided at 0.48 numerical aperture. The resist pattern profile cross sections were examined by means of scanning electron microscopy. A Hitachi S-4700 SEM (FIG. 1 to 6) or Hitachi SU8230 SEM (FIG. 7), were used to evaluate resist profiles.

[0317] 1H NMR (400 MHz) spectra were obtained at room temperature on a Bruker spectrometer,using deuterated chloroform as a solvent, and calibrated at 7.26 ppm or deuterated dimethylsulfoxide as a solvent and calibrated at 2.50 pm.

[0318] The molecular weight of polymers was measured with a Gel Permeation Chromatograph.Gel permeation chromatography equipped with 100Å, 500 Å, 103Å, 105Å and 106Å ^- ultrastyragel columns using polystyrene standards.

[0319] Lithographic Experiments were done using a TEL Mark 8.General synthetic procedure for the preparation of potassium phenyl sulfate derivatives

[0320] Scheme 1

[0321] Synthesis of potassium phenyl sulfate (1a). The synthesis of 1b-h follows the generalprocedure described herein for 1a: In a 250-mL round bottom flask equipped with magnetic stirring bar and reflux condenser, phenol (28.23 g; 0.3 mol) and sulfur trioxide pyridine complex pyridine (0.33 mol) were dispersed in anhydrous pyridine (150 mL) and the mixture was stirred at 45 ºC overnight. The reaction was then allowed to cool down to ambient temperature and transferred to a flask containing an aqueous solution of potassium hydroxide (270 mL; 5 mol / L). To this mixture, 300 mL iso-propanol was added to induce crystallization. The whitish precipitate was collected by filtration and recrystallized from a mixture of ethanol:water, 3:1 (v:v) to give white crystals ofAZ75195PC potassium phenyl sulfate (30.5 g; yield 47.9%).1H NMR (DMSO-d6): 7.28-7.25 (2H, t); 7.17-7.15 (2H, d); 7.05-7.02 (1H, t).

[0322] Potassium 4-methoxyphenyl sulfate (1b). recrystallization from a mixture ethanol:water, 4:1(v:v), white crystals, yield 61%.1H NMR (DMSO-d6): 7.07-7.04 (2H, d); 6.82-6.81 (2H, d); 3.70 (3H, s).

[0323] Potassium 4-hexyloxyphenyl sulfate (1c). recrystallization from a mixture ethanol:water, 4:1(v:v), white crystals, yield 53%.1H NMR (DMSO-d6): 7.05-7.02 (2H, d); 6.81-6.79 (2H, d); 3.91- 3.88 (2H, t); 1.71-1.65 (2H, m); 1.42-1.37 (2H, m); 1.32-1.28 (4H, 3); 0.89-0.85 (3H, t).

[0324] Potassium 4-methylsulfonylphenyl sulfate (1d). recrystallization from a mixtureethanol:water, 4:1 (v:v), white crystals, yield 55.1%.1H NMR (DMSO-d6): 7.85-7.82 (2H, d); 7.41- 7.38 (2H, d); 3.16 (3H, s).

[0325] Potassium 4-chlorophenyl sulfate (1e). recrystallization from a mixture ethanol:water, 4:1(v:v), white crystals, yield 58.4%.1H NMR (DMSO-d6): 7.32-7.30 (2H, d); 7.19-7.17 (2H, d).

[0326] Potassium 4-bromophenyl sulfate (1f). recrystallization from a mixture ethanol:water, 4:1(v:v), white crystals, yield 54.3%.1H NMR (DMSO-d6): 7.45-7.42 (2H, d); 7.14-7.12 (2H, d).

[0327] Potassium 4-nitrophenyl sulfate (1g). recrystallization from a mixture ethanol:water, 4:1(v:v), slight yellow crystals, yield 59.8%.1H NMR (DMSO-d6): 8.20-8.19 (2H, d); 7.40-7.38 (2H, d).

[0328] Potassium 4-(adamantan-1-yl)phenyl sulfate (1h). recrystallization from a mixtureethanol:water, 4:1 (v:v), white crystals, yield 52%.1H NMR (DMSO-d6): 7.24-7.22 (2H, d); 7.08- 7.07 (2H, d); 2.05-2.03 (3H, m); 1.84-1.83 (6H, m); 1.75-1.70 (6H, m).

[0329] Potassium 4-((2-ethylhexyl)sulfonyl)phenyl sulfate (1i). recrystallization from a mixtureethanol:water, 4:1 (v:v), white crystals, yield 51%.1H NMR (DMSO-d6): 7.82-7.80 (2H, d); 7.40- 7.38 (2H, d); 3.17-3.09 (2H, m); 1.75-1.70 (1, m); 1.39-1.24 (4H, m); 1.20-1.1 (4H, m); 0.83-0.80 (3H, t); 0.76-0.73 (3H, t).

[0330] Potassium 3,4,5-trimethoxyphenyl sulfate (1j). recrystallization from a mixtureethanol:water, 1:1 (v:v), white crystals, yield 91%.1H NMR (DMSO-d6): 6.51 (2H, s); 3.72 (6H, s); 3.61 (3H, s).

[0331] Potassium 3,5-dimethoxyphenyl sulfate (1k). recrystallization from a mixture ethanol:water,3:2 (v:v), white crystals, yield 89%.1H NMR (DMSO-d6): 6.37 (2H, s); 6.19 (1H, s); 3.68 (6H, s).

[0332] Potassium 3,5-difluorophenyl sulfate (1l). recrystallization from a mixture ethanol:water,AZ75195PC 4:3 (v:v), white crystals, yield 88%.1H NMR (DMSO-d6): 6.92-6.86 (3H, m).

[0333] Synthesis of tris(4-tert-butylphenyl)sulfonium bromide (2)

[0334] Scheme 2

[0335] Bis(4-tert-butylphenyl)sulfoxide. To thionyl chloride (25 mL; 0.34 mol) was added tert-butylbenzene (206 mL; 1.326 mol) in a 500 mL Schlenk flask under argon. The flask was then cooled to 0 °C and trifluoromethane sulfonic acid (130mL; 1.462 mol) was added dropwise. HCl is generated and vented through the stop cock of the Schlenk flask. After 1 hour, the reaction was allowed to warm up to room temperature and the stirring continued for another hour. The reaction mixture was quenched by pouring into ice and neutralized with NaHCO3. The sulfoxide formed was further extracted with dichloromethane, the organic phase was washed with additional water, separated, dried over sodium sulfate, filtered over Celite, and evaporated under high vacuum to afford a white solid. The solid was dispersed in heptane, to remove the excess of tert-butylbenzene, filtered off and further recrystallized from methanol to afford white crystals (85 g; yield 79.5%).1H NMR (CDCl3): 7.57-7.55 (4H, d); 7.48-7.46 (4H, d); 1.32 (18H, s).

[0336] Tris(4-tert-butylphenyl)sulfonium bromide (2). Magnesium turnings (11.78 g; 0.485 mol)were dispersed in anhydrous tetrahydrofuran (35 mL) in an oven-dry flask equipped with a magnetic stirring bar, reflux condenser, and addition funnel. Iodine (several crystals) was added, and the mixture stirred for several minutes (until the color dissipated). A solution of 1-bromo-4- tert-butylbenzene (86.7 mL; 0.5 mol) in anhydrous tetrahydrofuran (150 mL) was added dropwiseand the mixture gently heated to 67 oC to initiate the reaction. After the completion of addition, thedark brown mixture obtained was further stirred for additional 3 hours, maintaining a gentle reflux. Afterwards, the reaction mixture was cooled down to room temperature. To the cooled solution of the Grignard reagent mixture, a solution of bis(4-tert-butylphenyl)sulfoxide (31.45 g; 0.1 mol) inAZ75195PC anhydrous tetrahydrofuran (250 mL) was added. The mixture was cooled down with an ice bath and then chlorotrimethylsilane (64 mL; 0.5 mol) was added dropwise. After being stirred for 30min, the reaction was allowed to reach room temperature and quenched by addition of an aqueoushydrobromic acid 47%. Dichloromethane was added to the mixture to extract the organics. The organic phase was further washed with brine, dried over anhydrous sodium sulfate, and concentrated to dryness. Purification of the crude mixture by recrystallization from methanol afforded tris(4-tert-butylphenyl)sulfonium bromide as white crystals (49 g; yield 95.8%).1H NMR (CDCl3): 7.79-7.76 (6H, d); 7.67-7.65 (6H, d); 1.32 (27 H, s). General synthetic procedure for the preparation of PAG P1-6 with tris(4-tert- butylphenyl)sulfonium as cation

[0337] Scheme 3

[0338] Synthesis of tris(4-tert-butylphenyl)sulfonium 4-methoxyphenyl sulfate (PAG P1). Thesynthesis of PAG P2-6 follows the general procedure described herein for PAG P1: In a 250-mLround bottom flask equipped with magnetic stirring bar, potassium 4-methoxyphenyl sulfate (1b)(3.78 g; 15.6 mmol) was dispersed in dichloromethane (50 mL). To the suspension, a solution oftris(4-tert-butylphenyl)sulfonium bromide (2) (6.14 g; 12 mmol) in dichloromethane (100 mL) was added. To the reaction mixture, water was added until no more solid could be observed. The slightly turbid solution was further stirred under light protection for additional 3 hours. The organic phase was washed with water, separated, dried over sodium sulfate, and concentrated under vacuum. The obtained residue was further purified with a CombiFlash instrument on silica gel using dichloromethane:methanol mixture, 95:5 (v:v) as eluent. White crystals of tris(4-tert-butylphenyl)sulfonium 4-methoxyphenyl sulfate (PAG P1) were obtained from methyl tert-butylketone (6.7 g; yield 88%).1H NMR (CDCl3): 7.68-7.62 (12H, m); 7.33-7.32 (2H; d); 6.77-6.75 (2H,AZ75195PC d); 3.73 (3H, s); 1.32 (27 H, s).

[0339] Tris(4-tert-butylphenyl)sulfonium 4-hexyloxyphenyl sulfate (PAG P2). purification silicagel eluting on dichloromethane:methanol, 95:5 (v:v), crystallization methyl tert-butyl ketone, white crystals, yield 87%.1H NMR (CDCl3): 7.68-7.62 (12H, m); 7.31-7.29 (2H; d); 6.75-6.73 (2H, d); 3.87-3.85 (2H, t); 1.73-1.69 (2H, m); 1.44-1.40 (2H, m); 1.34-1.30 (31 H, m); 0.9-0.87 (3H, t).

[0340] Tris(4-tert-butylphenyl)sulfonium 4-methylsulfonylphenyl sulfate (PAG P3). purificationsilica gel eluting on dichloromethane:methanol, 95:5 (v:v), crystallization methyl tert-butyl ketone, white crystals, yield 70%.1H NMR (CDCl3): 7.81-7.79 (2H, d); 7.68-7.65 (6H; d); 7.62-7.60 (6H, d); 7.57-7.55 (2H, d); 2.99 (3H, s); 1.32 (27 H, s).

[0341] Tris(4-tert-butylphenyl)sulfonium 4-chlorophenyl sulfate (PAG P4). purification silica geleluting on dichloromethane:methanol, 95:5 (v:v), crystallization methyl tert-butyl ketone, white crystals, yield 71.4%.1H NMR (CDCl3): 7.65 (12H; s); 7.34-7.33 (2H, d); 7.17-7.16 (2H, d); 1.32 (27 H, s).

[0342] Tris(4-tert-butylphenyl)sulfonium 4-bromophenyl sulfate (PAG P5). purification silica geleluting on dichloromethane:methanol, 95:5 (v:v), crystallization methyl tert-butyl ketone, white crystals, yield 71%.1H NMR (DMSO-d6): 7.81-7.79 (4H, d); 7.75-7.73 (4H, d); 7.44-7.42 (2H, d); 7.13-7.11 (2H, d); 1.31 (27 H, s).

[0343] Tris(4-tert-butylphenyl)sulfonium 4-nitrophenyl sulfate (PAG P6). purification silica geleluting on dichloromethane:methanol, 95:5 (v:v), crystallization methyl tert-butyl ketone, lightyellow crystals, yield 87%.1H NMR (CDCl3): 8.12-8.10 (2H; d); 7.68-7.62 (12H, m); 7.50-7.48 (2H, d); 1.32 (27 H, s).AZ75195PCGeneral synthetic procedures for the preparation of PAG P7-10 with triphenyl sulfoniumTPS as cation

[0344] Scheme 4 Synthesis of triphenyl sulfonium phenyl sulfate (PAG P7).

[0345] The synthesis of PAG P8-10 and P14-17 follows the general procedure described hereinfor PAG P7: In a 250-mL round bottom flask equipped with magnetic stirring bar, potassiumphenyl sulfate (1a) (4.26 g; 20 mmol) was dissolved in water (75 mL). To the clear solution,triphenyl sulfonium chloride (5 g; 17 mmol) in water (75 mL) was added and the reaction mixturewas stirred under light protection for additional 3 hours. Ethyl acetate was added to the resulting suspension. The organic phase was thoroughly washed with water, separated, dried over sodium sulfate, and concentrated under vacuum. To the obtained residue, methyl tert-butyl ketone wasadded to induce crystallization. White crystals of triphenyl sulfonium phenyl sulfate (PAG P7)were collected by filtration and further dried under vacuum (6.7 g; yield 92%).1H NMR (DMSO- d6): 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 7.27-7.24 (2H, t); 7.17-7.15 (2H, d); 7.04-7.01 (1H, t).

[0346] Triphenyl sulfonium 4-methylsulfonylphenyl sulfate (PAG P8). crystallization from methyltert-butyl ketone, white crystals, yield 87%.1H NMR (DMSO-d6): 7.88-7.77 (17H, m); 7.41-7.38 (2H, d); 3.16 (3H, s).

[0347] Triphenyl sulfonium 4-nitrophenyl sulfate (PAG P9). slight yellow thick viscous liquid,AZ75195PC yield 85%.1H NMR (DMSO-d6): 8.20-8.17 (2H, d); 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 7.41- 7.37 (2H, d).

[0348] Triphenyl sulfonium 4-(adamantan-1-yl)phenyl sulfate (PAG P10). crystallization frommethyl tert-butyl ketone, white crystals, yield 82%.1H NMR (DMSO-d6): 7.88-7.85 (3H, m); 7.83- 7.77 (12H; m); 7.24-7.22 (2H, d); 7.08-7.07 (2H, d); 2.05-2.03 (3H, m); 1.84-1.83 (6H, m); 1.73- 1.71 (6H, m).

[0349] Triphenyl sulfonium 3,4,5-trimethoxyphenyl sulfate (PAG P14). white solid, yield 88%.1HNMR (DMSO-d6): 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 6.51 (2H, s); 3.70 (6H, s); 3.60 (3H, s).

[0350] Triphenyl sulfonium 3,5-dimethoxyphenyl sulfate (PAG P15). white solid, yield 87%. 1HNMR (DMSO-d6): 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 6.37 (2H, s); 6.19 (1H, s); 3.68 (3H, s).

[0351] Triphenyl sulfonium 4-((2-ethylhexyl)sulfonyl)phenyl sulfate (PAG P16). colorless thickviscous liquid, yield 96.1H NMR (DMSO-d6): 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 7.40-7.38 (2H, d); 3.17-3.09 (2H, m); 1.75-1.70 (1, m); 1.39-1.24 (4H, m); 1.20-1.1 (4H, m); 0.83-0.80 (3H, t); 0.76-0.73 (3H, t).

[0352] Triphenyl sulfonium 3,5-difluorophenyl sulfate (PAG P17). white solid, yield 87%. 1HNMR (DMSO-d6): 7.88-7.85 (3H, m); 7.83-7.77 (12H; m); 6.90-6.86 (3H, m). General synthetic procedure for the preparation of PAG P11-13 with di(4-tert- butylphenyl)iodonium DTBPIO as cation

[0353] Scheme 5Synthesis of di(4-tert-butylphenyl)iodonium phenyl sulfate (PAG P11).AZ75195PC

[0354] The synthesis of PAG P12,13 follows the general procedure described herein for PAG P11:Oxone (12.3 g; 40 mmol) was added to the suspension of iodine (2.54 g; 10 mmol), of 4-tert- butylbenzene (6.8 mL; 44 mmol) in acetonitrile (40 mL). To the reaction mixture cooled on an ice bath, concentrated sulfuric acid (8 mL; 150 mmol) was added dropwise (exothermic reaction), and the reaction mixture was further stirred overnight at room temperature. The color went from reddish to light yellow. Under light protection, the obtained mixture containing di(4-tert-butylphenyl)iodonium sulfate was added to a solution of potassium phenyl sulfate (1a) (8.5 g; 40mmol) in water (300 mL). Immediately, a fine precipitate was formed. Dichloromethane was added to the suspension and stirred for 2 hours. The organic phase was separated, dried over magnesium sulfate, filtered off over a Celite bed, and concentrated under vacuum. The thick brownish solidresidue was taken with methyl tert-butyl ketone to induce crystallization. White crystals of di(4-tert-butylphenyl)iodonium phenyl sulfate (PAG P11) were (DMSO-d6): 8.16-8.14 (4H, d); 7.84-7.83 (2H, d); 7.55-7.54 (4H; d); 7.41-7.39 (2H, d); 3.16 (collected by filtration and further dried under vacuum (7.2 g; yield 85%).1H NMR (DMSO-d6): 8.17-8.15 (4H, d); 7.46-7.54 (4H; d); 7.27- 7.24 (2H, t); 7.17-7.15 (2H, d); 7.04-7.01 (1H, t); 1.25 (18H, s).Di(4-tert-butylphenyl)iodonium 4-methylsulfonylphenyl sulfate (PAG P12). crystallization frommethyl tert-butyl ketone, white crystals, yield 84.5%.1H NMR 3H, t); 1.25 (18H, s). crystallization from: 8.21-8.18 (2H, d); 8.17-8.14 (4H, d); 7.56-7.53 (4H; d); 7.41-7.38 (2H, d); 1.25 (18H, s).

[0356] Di(4-tert-butylphenyl)iodonium 3,4,5-trimethoxyphenyl sulfate (PAG P18). crystallizationfrom methyl tert-butyl ketone, white crystals, yield 64%.1H NMR (DMSO-d6): 8.16-8.14 (4H, d); 7.55-7.54 (4H; d); 6.50 (2H, s); 3.71 (6H, s); 3.60 (3H, s); 1.26 (18H, s).Lithographic performance in P(PHS / S / TBA) resin. A comparison of formulations containingaryl sulfate based onium salt PAGs to those containing a PAGs which produce photoacidwhich contains perfluoroakyl moieties.

[0357] FIG. 1 and FIG. 2 respectively show Tables 2A, and 2B which summarize the initial resultsof the first screening experiments for formulation to replace fluorinated alkyl containing PAGs withthe non perfluoroalkyl containing PAGs which are onium salts of an aryl hydrogen sulfate whenusing a P(PHS / S / TBA) resin where the molar ratio of PAG to acid quencher has not been optimizedfor the performance of the aryl onium aryl sulfate PAGs.AZ75195PC

[0358] FIG. 3 and FIG. 4 respectively show Tables 3A and 3B which summarize the results of thesecond screening experiments for formulation to replace fluorinated alkyl containing PAGs withthe perfluoroalkyl PAGs which are onium salts of an aryl hydrogen sulfate when using aP(PHS / S / TBA) resin where the molar ratio of PAG to acid quencher has been optimized for theperformance of the aryl onium aryl sulfate PAGs. This has resulted in an improvement of thesensitivity approach that of the PFAS PAG mixture, approaching that of this mixture and maintaining the resolution and lithographic performance of the comparative formulation containingthe mixture of PFAS iodonium salts. Because the PFAS mixture using in the comparative exampleswas based on a mixture of iodonium salts, while the novel aryl sulfates PAG formulation werebased on sulfonium chromophores that may have a lower quantum yield in the P(PHS / S / TBA) resina third screening was done employing PAGs based on iodonium salts of aryl sulfates.

[0359] FIG. 5 and FIG. 6 respectively show Tables 4A and 4B which summarize the results of thethird screening experiments for formulation to replace pefluorinated containing PAGs with the nonperfluoroakyl containing aryl sulfate PAGs when using a P(PHS / S / TBA) in which the optimizedPAG to acid quencher molar ratio was maintained and the novel formulations containing aryl sulfatePAGs based on iodonium salts. These novel formulations unexpectedly have in many instancesbetter lithographic sensitivity or at the least maintain the similar lithographic sensitivity andlithographic resolution performance. Additionally, another unexpected result is that a singleiodonium salt PAG based on an aryl sulfate can replace in these formulations a more complexmixture of two different PFAS containing PAGs which simultaneously solved the problem of PFAScontent and accomplished this with a simpler formulation.FIG. 7 shows Table 5 which summarizes the results of an initial screening using theP(PHS / PTBST / TBA) resin comparing a formulation containing TPS-Nona (Comparative Example4) to PAG P7 which is triphenylsulfonium phenyl sulfate (Example 20). These initial resultswithout optimization of the quencher additives unexpectedly show that the formulation containing PAG P7 already has a resolution approaching that of the formulation containing TPS-Nona.

[0360] FIG. 8 and FIG. 9 respectively show Tables 6A and 6B which summarize the results of thescreening experiments using the in P(EPP / PHS) resin in which Comparative Example 5 containingtriphenylsulfonium triflate has this PFAS containing PAG replaced in different formulations witheither PAG P1, PAG P2, PAG P3, PAG P4, PAG P5 or PAG P6. The lithographic results usingthese aryl sulfate based onium salt PAG show that these impart similar sensitivity, resolution,AZ75195PC defocus latitude and exposure latitude to that obtained with Comparative Example 5 containing triphenyl sulfonium triflate.

[0361] FIG. 10 shows Table 7 which summarizes the results of dose-to print values using theP(PHS / S / TBA) resin.

[0362] The above screening with a range of different chemically amplified resins containing eitherhigh activation acid cleavable group [tert-butyl esters and ethers): P(PHS / S / TBA) &P(HS / PTBST / TBA)] or low activation energy acid cleavable groups [acetal: P(EPP / PHS) showthat that onium salt PAGs based on the non-PFAS aryl sulfates can be used to replace currentlyused onium salt PAGs containing PFAS moieties solving the problem of the presence ofundesirable PFAS materials.Comparative Photoresist Example 1

[0363] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.050parts of bis(4-(tert-butyl)phenyl)iodonium nanoflate (Garo In-K MP Gokyo Food & Chemical,Japan),), 0.600 parts of bis(4-(tert-butyl)phenyl)iodonium bis((perfluorobutyl)sulfonyl)amide (ZK-0518 MP Gokyo Food & Chemical, Japan) as a photo acid generator, 0.276 parts of TMEEA as anacid quencher, 0.15 parts of R-2011 as a surfactant, propylene glycol monomethyl ether (PGME)and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / ELratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solutionwas spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55,Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds,developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer to give 1^m trench pattern at 190 mJ / cm2. Photoresist Example 1

[0364] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.338parts of PAG P1 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140°C for 90 seconds to form a photosensitive layer with 8.5 ^m filmAZ75195PC thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepperhaving a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure,the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Photoresist Example 2

[0365] A resist solution was prepared by using 100 parts of P622 polymer P(PHS / S / TBA)), 1.487parts of PAG P2 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Photoresist Example 3

[0366] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.440parts of PAG P3 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Photoresist Example 4

[0367] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.347AZ75195PCparts of PAG P4 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepperhaving a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure,the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Photoresist Example 5

[0368] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.442parts of PAG P5 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Photoresist Example 6

[0369] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.365parts of PAG P6 as a photo acid generator, 0.276 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as asolvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure,AZ75195PC the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer.1^m trench pattern was not opened under 350 mJ / cm2. Comparative Photoresist Example 2

[0370] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.335parts of Garo In-K and 0.600 parts of ZK-0518 as photo acid generators, 0.276 parts of TMEEA asan acid quencher, 0.15 parts of R-2011 as a surfactant, propylene glycol monomethyl ether (PGME)and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 168 mJ / cm2and showed fine pattern profile. Photoresist Example 7

[0371] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.335parts of PAG P1 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 194 mJ / cm2and showed fine pattern profile. Photoresist Example 8

[0372] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.484parts of PAG P2 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsAZ75195PC of R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as asolvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixturewas mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 186 mJ / cm2and showed fine pattern profile. Photoresist Example 9

[0373] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.437parts of PAG P3 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 191 mJ / cm2and showed fine pattern profile. Photoresist Example 10

[0374] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.344parts of PAG P4 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAHAZ75195PC and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 180 mJ / cm2and showed fine pattern profile. Photoresist Example 11

[0375] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.439parts of PAG P5 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepperhaving a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure,the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 181 mJ / cm2and showed fine pattern profile. Photoresist Example 12

[0376] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.362parts of PAG P6 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 267 mJ / cm2and showed fine pattern profile. Comparative Photoresist Example 3

[0377] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.335parts of Garo In-K and 0.600 parts of ZK-0518 as photo acid generators, 0.276 parts of TMEEA asan acid quencher, 0.15 parts of R-2011 as a surfactant, propylene glycol monomethyl ether (PGME)and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / ELAZ75195PC ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive type-pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 168 mJ / cm2and showed fine pattern profile.Photoresist Example 13

[0378] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 0.916parts of PAG P7 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 115 mJ / cm2and showed fine pattern profile. Photoresist Example 14

[0379] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.083parts of PAG P8 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as asolvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixturewas mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitiveAZ75195PC layer had a trench pattern of 1^m, a sensitivity of 111 mJ / cm2and showed fine pattern profile. Photoresist Example 15

[0380] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.012parts of PAG P9 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a siliconwafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m filmthickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 155 mJ / cm2and showed fine pattern profile. Photoresist Example 16

[0381] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.203parts of PAG P10 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a siliconwafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m filmthickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 110 mJ / cm2and showed fine pattern profile. Photoresist Example 17

[0382] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.123parts of PAG P14 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as asolvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a siliconAZ75195PC wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 μm film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1μm, a sensitivity of 113 mJ / cm2 and showed fine pattern profile.

[0383] Photoresist Example 18

[0384] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.200parts of PAG P11 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixturewas mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a siliconwafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 79 mJ / cm2and showed fine pattern profile. Photoresist Example 19

[0385] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.368parts of PAG P12 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as asolvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixturewas mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitiveAZ75195PC layer had a trench pattern of 1^m, a sensitivity of 44 mJ / cm2and showed fine pattern profile. Photoresist Example 20

[0386] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 1.297parts of PAG P13 as a photo acid generator, 0.070 parts of TMEEA as an acid quencher, 0.15 partsof R-2011 as a surfactant, propylene glycol monomethyl ether (PGME) and ethyl lactate (EL) as a solvent. Solid content of the resist solution was 33.0% and PGME / EL ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 8.5 ^m film thickness. The photosensitive layer was exposed through a mask by irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5, NA=0.55, Sigma=0.80). After exposure, the photosensitive layer was post baked at 110 °C for 80 seconds, developed with 2.38% TMAH and then rinsed with water to obtain a positive-type pattern on the silicon wafer. The photosensitive layer had a trench pattern of 1^m, a sensitivity of 82 mJ / cm2and showed fine pattern profile.Lithographic performance in P(PHS / PTBST / TBA) resin. A comparison of formulationscontaining an aryl sulfate based onium salt PAGs to those containing a PAGs which producephotoacids which contain perfluoroakyl moieties

[0387] FIG. 7 shows Table 4 which summarizes the results of lithographic experiments done withP(PHS / PTBST / TBA) resin comparing aryl sulfate based onium salt to PAGs which photoreleaseperfluoroalkyl containing super acids.Comparative Photoresist Example 4

[0388] A resist solution was prepared by using 12.06 g of C-55 (Gun EI Chemical Industry Ltd)P(PHS / PTBST / TBA) polymer, 0.34 g of triphenyl sulfonium nonaflate (Toyo Gosei Co Ltd, TPS-Nona), 0.02 g of TEOLA (Wako Chemicals), 0.09 g of TPSA (Takamoto Oil and Fats), 0.48 g ofDMAC, 0.005 g of MegafacTM (DIC Color & Comfort) in 61 g of PGMEA and 26.1 g of PGME.The above-described resist solution was spin-coated on a substrate for semiconductor and baked on a direct hot plate at 120oC for 90 seconds to form a 0.40 ^m thick resist coating. This resist coating was selectively exposed through a mask using 248 nm KrF excimer laser light, post baked on a direct hot plate at 130oC for 90 seconds, then paddle-developed for 60 seconds in an alkaline developer solution (a 2.38 wt % aqueous solution of TMAH) to obtain a positive, line-and-space pattern on the silicon wafer. Observation of line width and cross-sectional profile of the positive pattern under a scanning type electronic microscope revealed that it was a pattern of 0.18 nm orAZ75195PCless with good pattern profile at an exposure amount of 49 mJ / cm2.Photoresist Example 21

[0389] A resist solution was prepared by using 12.13 g of P622 polymer (P(PHS / PTBST / TBA)),0.28 g of triphenyl sulfonium phenyl sulfate (PAG P7), 0.02 g of Triethanolamine (TEOLA), 0.09 g of triphenyl sulfonium Acetate (TPSA), 0.48 g of Dimethyl acetamide (DMAC), 0.005 g of Megafac (Surfactant made by DIC) in 61 g of PGMEA and 26.1 g of PGME. The above-described resist solution was spin-coated on a substrate for semiconductor and baked on a direct hot plate at 120oC for 90 seconds to form a 0.40 ^m thick resist coating. This resist coating was selectivelyexposed through a mask using 248 nm KrF excimer laser light, subjected to post exposure baking(PEB) on a direct hot plate at 130oC for 90 seconds, then paddle-developed for 60 seconds in an alkaline developer solution (a 2.38 wt % aqueous solution of tetramethylammonium hydroxide (TMAH)) to obtain a positive, line-and-space pattern on the silicon wafer. Observation of line width and cross-sectional profile of the positive pattern under a scanning type electronic microscoperevealed that it was a pattern of 0.18 nm or less with good pattern profile at an exposure amount of44 mJ / cm2.Lithographic performance in poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene] resin. Acomparison of aryl sulfate based onium salt PAGs to PAGs which produce photoacids whichcontain perfluoroakyl moieties

[0390] FIG.8 and 9 respectively shows Tables 5A and 5B which summarizes the results oflithographic experiments done with poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene]resincomparing aryl sulfate based onium salt to PAGs which photorelease perfluoroalkyl containingsuper acids. Comparative Photoresist Example 5

[0391] 0.2 g (0.485 mmol) of triphenyl sulfonium triflate (Toyo Gosei, TPS Tf), 5.0 g (0.0149 mole)of biscyclohexylsulfonyl diazomethane (WPAG-145 from Wako, BCHSD), 0.0479 g (0.000245 moles) N,N-dicyclohexyl amine (Wako, DCHMA), 0.093 g (0.00028998 mole) triphenylsulfoniumacetate (Takemoto, TPSA), 4 g (45.9 mmole) dimethylacetamide (Wako, DMA) and 0.06 g ofKP341 (surfactant made by Shinetsu) per 100 g of poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxystyrene] (P(EEOST / HS)) and adjusting the content of the solid components to 15.5 weight % usingPGMEA. The above-described resist solution was spin-coated on a substrate for semiconductor and baked on a direct hot plate at 90oC for 60 seconds to form a 0.690 ^m thick resist coating. ThisAZ75195PC resist coating was selectively exposed through a mask using 248 nm KrF excimer laser light,subjected to post exposure baking on a direct hot plate at 110oC for 90 seconds, then paddle-developed for 60 seconds in an alkaline developer solution (a 2.38 wt % aqueous solution of TMAH) to obtain a positive, line-and-space pattern on the silicon wafer. Observation of line width and cross- sectional profile of the positive pattern under a scanning type electronic microscope revealed that it was a pattern of 0.25 nm or less with good pattern profile at an exposure amount is around 18.8 mJ / cm2.Photoresist Example 22 to 27

[0392] 0.485 mmol of PAG P1 to P6 in earch separate solution to each was added 5 g (0.01495moles of biscyclohexylsulfonyl diazomethane (BCHSD) (WPAG-145 from Wako Pure Chemical Industries, Ltd), 0.0479 g (0.000245 moles) N,N-dicyclohexyl amine (Wako, DCHMA, 0.093 g (0.00028998 mole) triphenylsulfonium acetate (Takemoto, TPSA), 4 g (45.9 mmole) dimethylacetamide (Wako, DMA) and 0.06 g of KP341 (surfactant made by Shinetsu) per 100 g of poly[p-(1-ethoxyethoxy)styrene-co-p-hydroxy styrene] (P(EEOST / HS)) and adjusting thecontent of the solid components to 15.5 weight % using PGMEA. The above-described resistsolution was spin-coated on a substrate for semiconductor and baked on a direct hot plate at 90oC for 60 seconds to form a 0.690 ^m thick resist coating. This resist coating was selectively exposedthrough a mask using 248 nm KrF excimer laser light, subjected to post exposure baking on a directhot plate at 110oC for 90 seconds, then paddle-developed for 60 seconds in an alkaline developer solution (a 2.38 wt % aqueous solution of TMAH) to obtain a positive, line-and-space pattern on the silicon wafer. Observation of line width and cross-sectional profile of the positive pattern under a scanning type electronic microscope revealed that it was a pattern of 0.25 nm or less with good pattern profile at an exposure amount is around 21 mJ / cm2.

[0393] Lithographic performance in P(PHS / S / TBA) resin. Dose-to-print values forformulations containing aryl sulfate based onium salt PAGs. Photoresist example 28

[0394] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 0.656parts of PAG P18 as a photo acid generator, 0.15 parts of TEGO gride 100 as a surfactant, propyleneglycol monomethyl ether (PGME) and Propylene Glycol 1-Monomethyl Ether 2-Acetate (PGMEA) as a solvent. Solid content of the resist solution was 12.0% and PGME / PGMEA ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coatedAZ75195PC on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 1.0 μm film thickness. The photosensitive layer was exposed with 0.10~1250 mJ / cm2 of irradiation ofKrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5) without a photomask. After exposure, the photosensitive layer was post baked at 130 °C for 60 seconds, developed with 2.38% TMAH and then rinsed with water. Finaly, dose to print value was obtained with 3.4 mJ / cm2 from the film thickness measurement. Photoresist example 29

[0395] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 0.497parts of PAG P15 as a photo acid generator, 0.15 parts of TEGO gride 100 as a surfactant, propylene glycol monomethyl ether (PGME) and Propylene Glycol 1-Monomethyl Ether 2-Acetate (PGMEA) as a solvent. Solid content of the resist solution was 12.0% and PGME / PGMEA ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 1.0 μm film thickness. The photosensitive layer was exposed with 0.10~1250 mJ / cm2 of irradiation ofKrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5) without a photomask. After exposure, the photosensitive layer was post baked at 130 °C for 60 seconds, developed with 2.38% TMAH and then rinsed with water. Finaly, dose to print value was obtained with 4.1 mJ / cm2 from the film thickness measurement. Photoresist example 30

[0396] A resist solution was prepared by using 100 parts of P622 polymer (P(PHS / S / TBA)), 0.612parts of PAG P16 as a photo acid generator, 0.15 parts of TEGO gride 100 as a surfactant, propyleneglycol monomethyl ether (PGME) and Propylene Glycol 1-Monomethyl Ether 2-Acetate (PGMEA) as a solvent. Solid content of the resist solution was 12.0% and PGME / PGMEA ratio was 70 / 30. The mixture was mixed with stirring to obtain a resist solution. The resist solution was spin-coated on a silicon wafer and was baked at 140 °C for 90 seconds to form a photosensitive layer with 1.0 μm film thickness. The photosensitive layer was exposed with 0.10~1250 mJ / cm2 of irradiation of KrF stepper having a wavelength of 248 nm (Canon FPA-3000EX5) without a photomask. After exposure, the photosensitive layer was post baked at 130 °C for 60 seconds, developed with 2.38% TMAH and then rinsed with water. Finaly, dose to print value was obtained with 4.5 mJ / cm2 from the film thickness measurement.

Claims

AZ75195PC CLAIMS1. A Chemically amplified photoresist composition which comprises:Component A: at least one aryl sulfate aryl onium salt PAG (PAG), wherein in said aryl sulfatemoiety its aryl moiety is either unsubstituted or substituted with at least one substituent selectedfrom the group consisting of an alkyl, an alkoxy, aryl, -CN, -NO2, -S(=O)2-alkyl, -S(=O)2-aryl, -F,-Cl, and -Br, a linear alkoxy moiety comprising within its chain at least one (-CH2-O-CH2-) alkylether functionality, but which does not contain any (-CH2-O-CH2-O-) moieties, and in said arylonium salt its aryl moieties are either unsubstituted or have at least one aryl moiety substituted withat least one substituent selected from the group consisting of an alkyl, and an alkoxy,Component B: a resin essentially insoluble in aqueous 0.26 N TMAH at room temperature comprising at least one type of repeat unit which contains a base solubilizing moiety masked by an acid labile group, where the catalytic cleaving of this acid labile group by an acid, formed by radiation induced fragmentation of Component A, unmasks the base solubilizing moiety and renders the resin soluble in aqueous 0.26 N TMAH at room temperature,Component C: at least one acid quencher additive having a pKa higher than -0.5 and a boilingpoint of at least 150ºC at 1 atmosphere,Component D: an organic spin casting solvent, wherein furthersaid composition is free of any perfluoroalkyl, fluoroalkyl moieties or mixtures thereof.

2. The composition of claim 1, where said composition is free of any alkyl sulfate onium salt PAGsor substituted alkyl sulfate onium salt PAGs.

3. The composition of claim 1 or 2, where said composition is one where said aryl sulfate arylonium salt PAG (PAG) is selected from the group consisting of ones having structure (I), (II), (III),(IV), (V), (VI), (VII), (VIII), (IX), (X), (XI) and (XII), wherein in these structures, R1, R2, R3, R1a, R2b, are independently selected from hydrogen, a C-1 to C-12 alkyl, or a C-1 to C-12 alkoxy, R4 is independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprisingan alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 to C-4 alkylene,Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3 is a C-1 to C- 4 alkyl, R5is independently selected from a C-1 to C-12 alkyl, a unsubstituted aryl or a substituted aryl, R6is independently selected from H or a C-1 to C-12 alkyl, X is independently a halide selected from the group consisting of F, Cl and Br and ni, and niii, are independently a integer from 1 to 5, nii and niia are integers from 1 to 4, where the sum of nii and niia ranges from 2 to 5,AZ75195PC4. The composition of any one of claims 1 to 3, wherein Component B, said resin essentiallyinsoluble in aqueous 0.26 N TMAH at room temperature, comprises repeat units derived from 4-hydroxystyrene in addition to at least one type of repeat unit which contains a base solubilizingmoiety masked by an acid labile group, where the catalytic cleaving of this acid labile group by an acid formed by radiation induced fragmentation of Component A, unmasks the base solubilizingAZ75195PC group and renders the resin soluble in aqueous 0.26 N TMAH at room temperature and further, where it does not contain any repeat units comprising moieties which impart a high absorbance at 248 nm greater than 0.8 Absorbance Unit (AU) / micron to a coated film of said resin.

5. The composition of any one of claims 1 to 3, wherein Component B, said resin essentiallyinsoluble in aqueous 0.26 N TMAH at room temperature, does not contain any repeat units comprising moieties which impart a high absorbance at 193 nm greater than 0.8 Absorbance Unit (AU) / micron to a coated film of said resin, and comprises a base solubilizing moiety masked byan acid labile group, which is derived from an acrylate or methacrylate repeat unit wherein in these,the carboxylic acid moiety is masked by said acid labile group where the catalytic cleaving of saidacid labile group by an acid, formed by the radiation induced fragmentation of Component A,unmasks the base solubilizing group and renders this resin soluble in aqueous 0.26 N TMAH at room temperature.

6. The composition of any one of claims 1 to 3, wherein Component B, said resin essentiallyinsoluble in aqueous 0.26 N TMAH at room temperature, is a EUV resin which has an absorbance at 13.5 nm from about 0.4 AU / micron to about 0.5 AU / micron and that comprises at least one basesolubilizing moiety masked by an acid labile group, which is derived from a phenolic repeat unit,an acrylate repeat unit, a methacrylate repeat unit or a mixture of these, wherein the carboxylicacid moiety and / or the phenolic moiety of these are masked by said acid labile group where thecatalytic cleaving of said acid labile group by an acid, formed by the radiation inducedfragmentation of Component A, unmasks the base solubilizing group and renders this resin solublein aqueous 0.26 N TMAH at room temperature.

7. The composition of any one of claims 1 to 6, wherein said aryl sulfate PAG has structure (I)as defined in claim 3.

8. The composition of claim 7, wherein said aryl sulfate aryl onium salt PAG has structure (Ia),AZ75195PC9. The composition of claim 7, where said aryl sulfate aryl onium salt PAG has structure (Ib),R4aand R4bare independently selected from the group consisting of a C-1 to C-12 alkyl, an alkylmoiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth isa C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6,and Reth3 is a C-1 to C-4 alkyl,10. The composition of claim 7, where said aryl sulfate aryl onium salt PAG has structure (Ic),where R4, R4a and R4b are independently selected from the group consisting of a C-1 to C-12 alkyland an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3,where Rethis a C-1 to C-4 alkylene, Reth1is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3is a C-1 to C-4 alkyl,11. The composition of any one of claims 1 to 6, where said aryl sulfate aryl onium salt PAGhas structure (II) as defined in claim 3.

12. The composition of claim 11, wherein said aryl sulfate aryl onium salt PAG has structure(IIa), where R4a and R4b are independently selected from the group consisting of a C-1 to C-12 alkyl,an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, whereAZ75195PC Rethis a C-1 to C-4 alkylene, Reth1is a linear C-2 to C-4 alkylene, neth is an integer ranging from 1 to 6, and Reth3is a C-1 to C-4 alkyl,13. The composition of claim 11, wherein said aryl sulfate aryl onium salt PAG has structure(IIb), where Xa and Xb are independently a halide selected from the group consisting of F, Cl and14. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (III) as defined in claim 3.

15. The composition of claim 14, wherein said aryl sulfate aryl onium salt PAG has structure(IIIa),AZ75195PC16. The composition of claim 14, wherein said aryl sulfate aryl onium salt PAG has structure(IIIb),17. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (IV) as defined in claim 3.

18. The composition of claim 17, wherein said aryl sulfate aryl onium salt PAG has structure(IVa), where Xa, Xb, Xc, Xd are independently a halide selected from the group consisting of F, Cland Br19. The composition of claim 17, wherein said aryl sulfate aryl onium salt PAG has structure(IVb),AZ75195PC20. The composition of claim 17, wherein said aryl sulfate aryl onium salt PAG has structure(IVc), where Xa, Xb are independently a halide selected from the group consisting of F, Cl and Br21. The composition of claim 17, wherein said aryl sulfate aryl onium salt PAG has structure(IVd), where Xa, Xb are independently a halide selected from the group consisting of F, Cl and Br22. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (V) as defined in claim 3.

23. The composition of claim 22, wherein said aryl sulfate aryl onium salt PAG has structure(Va)AZ75195PC24. The composition of claim 22, wherein said aryl sulfate aryl onium salt PAG has structure(Vb)25. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (VI) as defined in claim 3.

26. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIa),27. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIb),AZ75195PC28. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structurehas structure (VIa-1),29. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIb-1),30. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIa-2),AZ75195PC31. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIb-2),32. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIa-3),33. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIb-3),AZ75195PC34. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIa-4),35. The composition of claim 25, wherein said aryl sulfate aryl onium salt PAG has structure(VIb-4),36. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (VII) as defined in claim 3.

37. The composition of claim 36, wherein said aryl sulfate aryl onium salt PAG has structure(VIIa)AZ75195PC(VIIa).

38. The composition of claim 36, where said aryl sulfate aryl onium salt PAG has structure(VIIb), where R4a and R4b are independently selected from the group consisting of a C-1 to C-12alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3,where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer rangingfrom 1 to 6, and Reth3 is a C-1 to C-4 alkyl,(VIIb).

39. The composition of claim 36, where said aryl sulfate aryl onium salt PAG has structure(VIIc), where R4, R4a and R4b are independently selected from the group consisting of a C-1 to C-12 alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3, where Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integerranging from 1 to 6, and Reth3 is a C-1 to C-4 alkyl,40. The composition of any one of claims 1 to 6, where said aryl sulfate aryl onium salt PAGhas structure (VIII) as defined in claim 3.

41. The composition of claim 40, wherein said aryl sulfate aryl onium salt PAG has structure(VIIIa), where R4a and R4b are independently selected from the group consisting of a C-1 to C-12alkyl, an alkyl moiety comprising an alkyl ether moiety having structure –Reth-O-(Reth1-O)neth-Reth3,AZ75195PCwhere Reth is a C-1 to C-4 alkylene, Reth1 is a linear C-2 to C-4 alkylene, neth is an integer rangingfrom 1 to 6, and Reth3 is a C-1 to C-4 alkyl,(VIIIa).

42. The composition of claim 40, wherein said aryl sulfate aryl onium salt PAG has structure(VIIIb), where Xa, Xb are independently a halide selected from the group consisting of F, Cl and Br(VIIIb).

43. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (IX) as defined in claim 3.

44. The composition of claim 43, wherein said aryl sulfate aryl onium salt PAG has structure(IXa),45. The composition of claim 43, wherein said aryl sulfate aryl onium salt PAG has structure(IXb),AZ75195PC46. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (X) as defined in claim 3.

47. The composition of claim 46, wherein said aryl sulfate aryl onium salt PAG has structure(Xa), where Xa, Xb, Xc, Xd are independently a halide selected from the group consisting of F, Cland Br48. The composition of claim 46, wherein said aryl sulfate aryl onium salt PAG has structure(Xb),49. The composition of claim 46, wherein said aryl sulfate aryl onium salt PAG has structure(Xc), where Xa, Xb are independently a halide selected from the group consisting of F, Cl and Br50. The composition of claim 46, wherein said aryl sulfate aryl onium salt PAG has structure(Xd), where Xa, Xb are independently a halide selected from the group consisting of F, Cl and BrAZ75195PC51. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (XI) as defined in claim 3.

52. The composition of claim 51, wherein said aryl sulfate aryl onium salt PAG has structure(XIa)53. The composition of claim 51, wherein said aryl sulfate aryl onium salt PAG has structure(XIb).

54. The composition of any one of claims 1 to 6, wherein said aryl sulfate aryl onium salt PAGhas structure (XII) as defined in claim 3.

55. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIa),56. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIb),57. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structureAZ75195PC (XIIa-1),58. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIb-1),(XIIb-1).

59. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIa-2),60. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIb-2),61. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIa-3),AZ75195PC62. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIb-3),63. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIa-4),64. The composition of claim 54, wherein said aryl sulfate aryl onium salt PAG has structure(XIIb-4),65. The composition of any one of claim 1 to 4 and 7 to 64, wherein component B is a polymerhaving structure (B-1), which comprises repeat units of structure (Ip), (IIp) and (IIIp), where R1p, R2p, and R3pare individually selected from a C-1 to C-6 alkyl, np is 0, 1, 2 or 3, and R4pis a C-1 to C-4 alkyl, and R5p is H or a methyl, and k, l and m are the number of repeat units,AZ75195PC66. The composition of any one of claim 1 to 4 and 7 to 65, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer having structure (B-1), the mole %of repeat unit of structure (Ip) ranges from about 47.5 mole % to about 71.3 mole %, the mole % of structure (IIp) ranges from about 15.3 mole % to about 22.9 mole % and structure (IIIp) rangesfrom about 17.2 mole % to about 25.8 mole %, and further that the sum of the mole % values ofthe repeat unit of structure (Ip), the repeat unit of structure (IIp) and the repeat units of structure (IIIp), adds up to 100 mole %.

67. The composition of any one of claim 1 to 4 and 7 to 66, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 53.46 mole % to about 65.34 mole %, the mole % of structure (IIp) ranges from about 17.19 mole % to about 21.01 mole % and structure (IIIp) ranges from about 19.35 mole % to about 23.65 mole %, and further that the sum of the mole % values of the repeat unit of structure (Ip), the repeat unit of structure (IIp) and the repeat units of structure (IIIp), adds up to 100 mole %.

68. The composition of any one of claim 1 to 4 and 7 to 67, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 55.8 mole % to about 63.0 mole %, the mole % of structure (IIp) ranges from about 18.0 mole % to about 20.2 mole % and structure (IIIp) rangesfrom about 20.2 mole % to about 22.8 mole %, and further that the sum of the mole % values ofthe repeat unit of structure (Ip), the repeat unit of structure (IIp) and the repeat units of structure (IIIp), adds up to 100 mole %.

69. The composition of any one of claim 1 to 4 and 7 to 68, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 57.0 mole % to about 61.8 mole %, the mole % ofAZ75195PC structure (IIp) ranges from about 18.3 mole % to about 19.9 mole % and structure (IIIp) ranges from about 20.6 mole % to about 22.4 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

70. The composition of any one of claim 1 to 4 and 7 to 69, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 58.2 mole % to about 60.6 mole %, the mole % of structure (IIp) ranges from about 18.7 mole % to about 19.5 mole % and structure (IIIp) ranges from about 21.1 mole % to about 21.9 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

71. The composition of any one of claim 1 to 4 and 7 to 70, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 58.8 mole % to about 60.0 mole %, the mole % of structure (IIp) ranges from about 18.9 mole % to about 19.3 mole % and structure (IIIp) ranges from about 21.3 mole % to about 21.7 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

72. The composition of any one of claim 1 to 4 and 7 to 64, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) ranges from about 58.0 mole % to about 60.0 mole %, the mole % of structure (IIp) ranges from about 18.5 mole % to about 20.5 mole % and structure (IIIp) ranges from about 21.3 mole % to about 21.7 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

73. The composition of any one of claim 1 to 4 and 7 to 72, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and in the polymer of structure (B-1) the mole % ofrepeat unit of structure (Ip) is about 59.4 mole %, the mole % of structure (IIp) is about 19.1 mole %and structure (IIIp) is about 21.5 mole %and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IIp) and the repeat unit of structure (IIIp) adds up to 100 mole %.AZ75195PC74. The composition of any one of claim 1 to 4 and 7 to 73, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit ofstructure (IIIp) in said polymer of structure (B-1) to the moles of component A, said PAG, is fromabout 68.8 to about 103.2.

75. The composition of any one of claim 1 to 4 and 7 to 74, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit of structure(IIIp) in said polymer of structure (B-1) the moles of component A, said PAG, is from about 77.5to about 94.7.

76. The composition of any one of claim 1 to 4 and 7 to 75, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit of structure(IIIp) in said polymer of structure (B-1) to the moles of component A, said PAG, is from about 80.9to about 91.2.

77. The composition of any one of claim 1 to 4 and 7 to 76, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit of structure(IIIp) in said polymer of structure (B-1) to the moles of component A, said PAG, is from about 82.6to about 89.5.

78. The composition of any one of claim 1 to 4 and 7 to 77, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit of structure(IIIp) in said polymer of structure (B-1) to the moles of component A, said PAG, is from about 84.3to about 87.8.

79. The composition of any one of claim 1 to 4 and 7 to 78, wherein component B is a polymerhaving structure (B-1) as defined in claim 65, and the ratio of the moles of the repeat unit of structure(IIIp) in said polymer of structure (B-1) to the moles of component A, said PAG, is from about 85.2to about 86.9.

80. The composition of any one of claim 1 to 4 and 7 to 79, wherein the mole ratio of the molesof component A, said PAG to the moles of component C, said acid quencher is from about 7.8 toabout 11.7.

81. The composition of any one of claim 1 to 4 and 7 to 80, wherein the mole ratio of the molesof component A, said PAG to the moles of component C, said acid quencher is from about 8.8 toabout 10.7.

82. The composition of any one of claim 1 to 4 and 7 to 81, wherein the mole ratio of the molesAZ75195PCof component A, said PAG to the moles of component C, said acid quencher is from about 9.2 toabout 10.3.

83. The composition of any one of claim 1 to 4 and 7 to 82, wherein the mole ratio of the molesof component A, said PAG to the moles of component C, said acid quencher is from about 9.4 toabout 10.1.

84. The composition of any one of claim 1 to 4 and 7 to 83, wherein the mole ratio of the molesof component A, said PAG to the moles of component C, said acid quencher is from about 9.6 toabout 9.9.

85. The composition of any one of claim 1 to 4 and 7 to 84, wherein the mole ratio of the molesof component A, said PAG to the moles of component C, said acid quencher is from about 9.7 toabout 9.8.

86. The composition of any one of claim 1 to 4 and 7 to 85, wherein said component B is apolymer having structure (B-1) as defined in claim 65, wherein, R4p is methyl and np is 1.

87. The composition of claim 86, wherein R5p is methyl.

88. The composition of claim 86, wherein R5p is H.

89. The composition of claim 86 to 88, wherein R3p, R1p and R2p are methyl.

90. The composition of any one of claim 1 to 4 and 7 to 85, wherein said component B, is apolymer having structure (B-1) as defined in claim 65, wherein, np is 0.

91. The composition of claim 90, wherein said component B is a polymer having structure (B-1), wherein R5pis methyl.

92. The composition of claim 90, wherein said component B, is a polymer having structure (B-1), wherein R5pis H.

93. The composition of any one of claim 90 to 92, wherein said component B, is a polymerhaving structure (B-1), wherein R3p, R1p and R2p are methyl.

94. The composition of any one of claim 90, 92 or 93, wherein said component B, said polymerhaving structure (B-1), is one wherein said repeat unit of structure (IIp) has structure (IIpa) and said repeat unit of structure (IIIp) has structure (IIIpa),AZ75195PC.

95. The composition of any one of claim 1 to 4 and 7 to 94, wherein component C, said acidquencher is an amine.

96. The composition of any one of claim 1 to 4 and 7 to 95, where Component C said acidquencher is at least one acid quencher of structure (C-1), wherein Rq1, Rq2, Rq3 are independentlya C-1 to C-4 alkyl, L1, L1a, L2, L2a, L3, L3a are independently a linear C-2 to C-4 alkylene spacer,(C-1).

97. The composition of any one of claim 1 to 4 and 7 to 96, where Component C said acidquencher is at least one acid quencher of structure (C-1) as defined in claim 96, wherein Rq1, Rq2,Rq3 are the same C-1 to C-4 alkyl, L1, L2 and L3 are the same linear C-2 to C-4 alkylene spacer andL1a, L2a and L3a are the same linear C-2 to C-4 alkylene spacer.

98. The composition of any one of claim 1 to 4 and 7 to 97, where Component C said acidquencher is at least one acid quencher of structure (C-1a),99. The composition of any one of claim 1 to 4 and 7 to 98, wherein Component B, said polymer,AZ75195PChas an Mw of about 8,000 to about 27,000 and a polydispersity of 1.0 to about 2.5.

100. The composition of any one of claim 1 to 4 and 7 to 99, wherein Component B, has an Mwof about 12,684 to about 13,884 and a polydispersity of about 1.77 to about 2.17.

101. The composition of any one of claim 1 to 4 and 7 to 64, wherein component B is a polymerof structure (B-2) which comprises repeat units of structure (Ip), (IVp) and (IIIp), where R1p, R2p,R3p, R6p, R7p and R8p are individually selected from a C-1 to C-6 alkyl, R5p is H or a C-1 to C-4alkyl, ka, la, and ma are the number of repeat units,102. The composition of claim 101, wherein said composition as Component C, said acidquencher additive, comprises at least one amine.

103. The composition of any one of claims 101 or 102, wherein said composition as ComponentC, said acid quencher additive which is an amine has structure (C-4), wherein L4, L5 and L6 areindependently a linear C-2 to C-4 alkylene spacer104. The composition of any one of claims 102 to 103, wherein said composition as ComponentC, said acid quencher additive, further comprises at least one triarylsulfonium carboxylate.

105. The composition of claim 104, wherein said triarylsulfonium carboxylate has structure (C-2), wherein Rq4 is a C-1 to C-4 alkyl, and Rac1, Rac2 and Rac3 are independently selected from H, a C-1 to C-12 alkyl and a C-1 to C-12 alkoxy,AZ75195PC106. The composition of any one of claims 102 to 105, wherein said composition as ComponentC, said acid quencher additive, further comprises at least one amide.

107. The composition of claim 106, wherein said amide has structure (C-3), wherein Rq5, Rq6,Rq7 are independently a C-1 to C-4 alkyl,108. The composition of any one of claims 101 to 107, wherein Component C, said acid quencheris a mixture of an amine having structure (C-4) as defined in claim 103, a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) asdefined in claim 107.

109. The composition of any one of claims 101 to 108, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 52.8 mole % to about 79.9 mole %, the mole % of structure (IVp) ranges from about 17.6 mole % to about 26.4 mole % and structure (IIIp) ranges from about 9.6 mole % to about 14.4 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

110. The composition of any one of claims 101 to 109, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 59.4 mole % to about 72.6 mole %, the mole % of structure (IVp) ranges from about 21.12 mole % to about 24.2 mole % and structure(IIIp) ranges from about 10.8 mole % to about 13.2 mole %, and further that the sum of the mole %values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

111. The composition of of any one of claims 101 to 110, wherein in the polymer of structureAZ75195PC (B-2) the mole % of repeat unit of structure (Ip) ranges from about 62.4 mole % to about 70.0 mole %, the mole % of structure (IVp) ranges from about 20.7 mole % to about 23.3 mole % and structure (IIIp) ranges from about 11.3 mole % to about 12.7 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

112. The composition of any one of claims 101 to 111, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 63.4 mole % to about 68.6 mole %, the mole % of structure (IVp) ranges from about 21.1 mole % to about 22.9 mole % and structure (IIIp) ranges from about 11.5 mole % to about 12.5 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

113. The composition of any one of claims 101 to 112, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 64.7 mole % to about 67.3 mole %, the mole % of structure (IVp) ranges from about 21.6 mole % to about 22.4 mole % and structure (IIIp) ranges from about 11.8 mole % to about 12.2 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

114. The composition of any one of claims 101 to 113, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 65.3 mole % to about 66.7 mole %, the mole % of structure (IVp) ranges from about 21.8 mole % to about 22.2 mole % and the mole %of structure (IIIp) ranges from about 11.9 mole % to about 12.1 mole %, and further that the sumof the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

115. The composition of any one of claims 101 to 107, wherein in the polymer of structure (B-2) the mole % of repeat unit of structure (Ip) ranges from about 65 mole % to about 67 mole %, the mole % of structure (IVp) ranges from about 21.4 mole % to about 23.4 mole % and structure (IIIp) ranges from about 11.0 mole % to about 13.0 mole %, and further that the sum of the mole % values of the repeat units of structure (Ip), the repeat unit of structure (IVp) and the repeat unit of structure (IIIp) adds up to 100 mole %.

116. The composition of any one of claims 101 to 115, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in this polymer, to the moles of component A, said PAG,AZ75195PC is from about 38.5 to about 57.8.

117. The composition of any one of claims 101 to 116, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is from about 43.3 to about 53.0.

118. The composition of any one of claims 101 to 117, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is from about 45.3 to about 51.1.

119. The composition of any one of claims 101 to 118, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is from about 46.3 to about 50.1.

120. The composition of any one of claims 101 to 119, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is from about 47.2 to about 49.1.

121. The composition of any one of claims 101 to 120, wherein the ratio of the total moles of therepeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is from about 47.7 to about 48.2.

122. The composition of any one of claims 101 to 116, and wherein the ratio of the total molesof the repeat unit of structures (IVp) and (IIIp) in said polymer of structure (B-2), to the moles of component A, said PAG, is about 48.2.

123. The composition of any one of claims 101 to 122, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 1.84 to about 2.76, and the mole ratio of component A, said PAG, to component C, saidacid quencher of structure (C-3) is from about 0.093 to about 0.139, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 3.83 to about 5.74.

124. The composition of any one of claims 101 to 123, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate havingstructure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107,AZ75195PC andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 2.07 to about 2.53, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isfrom about 0.105 to about 0.128, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.31 to about 5.26.

125. The composition of any one of claims 101 to 124, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 2.16 to about 2.43, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isfrom about 0.109 to about 0.123, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.50 to about 5.07.

126. The composition of any one of claims 101 to 125, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 2.20 to about 2.39, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isfrom about 0.111 to about 0.121, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.60 to about 4.98.

127. The composition of any one of claims 101 to 126, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andAZ75195PCthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 2.25 to about 2.34, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isfrom about 0.114 to about 0.119, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.69 to about 4.88.

128. The composition of any one of claims 101 to 127, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isfrom about 2.27 to about 2.30, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isfrom about 0.115 to about 0.126, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isfrom about 4.73 to about 4.79.

129. The composition of any one of claims 101 to 122, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 105 and an amide having structure (C-3) as defined in claim 107, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-2) isabout 2.29, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-3) isabout 0.116, andthe mole ratio of component A, said PAG, to component C, said acid quencher of structure (C-4) isabout 4.78.

130. The composition of any one of claims 101 to 129, wherein said composition comprises atriarylsulfonium carboxylate having structure (C-2) as defined in claim 105, and said acid quencherof structure (C-2) has structure (C-2a),AZ75195PC131. The composition of any one of claims 101 to 130, wherein said composition comprises anamide having structure (C-3) as defined in claim 107, and said acid quencher of structure (C-3) hasstructure (C-3a),132. The composition of any one of claims 102 to 131, wherein said composition comprises anamine having structure (C-4) as defined in claim 103, and said acid quencher of structure (C-4) hasstructure (C4a), (C-4a).

133. The composition of any one of claims 101 to 132, wherein Component B, of structure (B-2), said polymer, has an Mw of about 18,815 to about 63,659 and an polydispersity of 1.0 to about2.5.

134. The composition of any one of claims 101 to 133, wherein Component B, of structure (B-2) is one where said repeat unit of structure (IVp) has structure (IVpa) and said repeat unit of structure (IIIp) has structure (IIIpa),AZ75195PC(IVpa) (IIIpa) .

135. The composition of any one of claim 1 to 4 and 7 to 64, wherein component B, comprisestwo different polymers of structures (B-3) and (B-4), where R10p, R9p are individually selected from a C-1 to C-4 alkyl, kb, lb are the number of repeat units for polymer (B-3) and kba and lba are the number of repeat units for polymer (B-4) where the mole % of the repeat unit of structure (Vp) in the polymer of structure (B-3) and (B-4) are different,136. The composition of claim 135, which further comprises an additional PAG of structure (F- 1), where Rd1and Rd2are individually selected from a C-5 to C-8 alicyclic alkyl.AZ75195PC137. The composition of claim 135 or 136, wherein component C, said acid quencher comprisesan amine.

138. The composition of claim 137, where said amine has structure (C-5), where Rc3 is a C-1 toC-4 alkyl and Rc1and Rc2are independently selected from a C-5 to C-8 cyclic alkyl,139. The composition of any one of claims 136 to 138, where Component C, said acid quencher,further comprises a triarylsulfonium carboxylate.

140. The composition of claim 139, wherein said triarylsulfonium carboxylate has structure (C-2), where Rq4 is a C-1 to C-4 alkyl, and Rac1, Rac2 and Rac3 are independently selected from H, a C-1 to C-12 alkyl and a C-1 to C-12 alkoxy,141. The composition of any one of claim 136 to 140, wherein Component C, said acid quencher,further comprises an amide.

142. The composition of claim 141, where said amide has structure (C-3), where Rq5, Rq6, Rq7are independently a C-1 to C-4 alkyl,143. The composition of any one of claim 135 to 142, wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, range from aboutAZ75195PC 28.1 mole % to about 42.12 mole %.

144. The composition of any one of claim 135 to 143, wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, range from about31.6 mole % to about 38.6 mole %.

145. The composition of any one of claim 135 to 144, wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, range from about 33.0 mole % to about 37.2 mole %.

146. The composition of any one of claim 135 to 145 wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, range from about33.7 mole % to about 36.5 mole %.

147. The composition of any one of claim 135 to 146, wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, ranges from about34.4 mole % to about 35.8 mole %.

148. The composition of any one of claim 135 to 147, wherein said total mole % of repeat unitsof structure (Vp) in both polymers of structure (B-3) and (B-4), independently, ranges from about 34.7 mole % to about 35.5mole %.

149. The composition of any one of claim 135 to 148, wherein said repeat unit of structure (Vp)has structure (Vp-1),150. The composition of any one of claim 135 to 149, wherein said polymer of structure (B-3)and (B-4) have an Mw which independently ranges from about 24,544 to about 16,363 and apolydispersity which independently ranges from 1 to about 1.35.

151. The composition of any one of claim 135 to 150, wherein it comprises a PAG of structureAZ75195PC(F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0260 toabout 0.0389.

152. The composition of any one of claim 135 to 151, wherein it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0291 toabout 0.0357.

153. The composition of any one of claim 135 to 152, wherein it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0305 toabout 0.0344.

154. The composition of any one of claim 135 to 153, wherein it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0311 toabout 0.0337.

155. The composition of any one of claim 135 to 154, wherein it comprises a PAG of structure(F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0318 toabout 0.0331.

156. The composition of any one of claim 135 to 155, wherein it comprises a PAG of structure(F-1) as defined in claim 136, and the mole ratio of the moles of component A, said aryl sulfate arylonium salt PAG to said component F, said PAG of structure (F-1) ranges from about 0.0321 toabout 0.0328.

157. The composition of any one of claim 135 to 156, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAG ranges from about 398 to about 597.

158. The composition of any one of claim 135 to 157, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAGranges from about 448 to about 547.

159. The composition of any one of claim 135 to 158, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAGAZ75195PC ranges from about 468 to about 528.

160. The composition of any one of claim 135 to 159, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAGfrom about 478 to about 518.

161. The composition of any one of claim 135 to 160, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAG isfrom about 488 to about 508.

162. The composition of any one of claim 135 to 161, where the mole ratio of the moles of repeatunits of structure (Vp) to the mole % of said component A, said aryl sulfate aryl onium salt PAG isfrom about 493 to about 503.

163. The composition of any one of claim 135 to 162, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) is from about 12.9 to about 19.4.

164. The composition of any one of claim 135 to 163, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) ranges from about 14.5 to about 17.8.

165. The composition of any one of claim 135 to 164, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) ranges from about 15.2 to about 17.1.

166. The composition of any one of claim 135 to 165, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) is from about 15.5 to about 16.8.

167. The composition of any one of claim 135 to 166, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) is from about 15.8 to about 16.5.

168. The composition of any one of claim 135 to 167, where it comprises a PAG of structure (F-1) as defined in claim 136, and the mole ratio of the moles of repeat units of structure (Vp) to themole % of said component F, said PAG of structure (F-1) is from about 16.0 to about 16.3.

169. The composition of any one of claim 135 to 168, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromAZ75195PCabout 2.00 to about 1.38.

170. The composition of any one of claim 135 to 169, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromabout 1.84 to about 1.50.

171. The composition of any one of claim 135 to 170, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromabout 1.77 to about 1.57.

172. The composition of any one of claim 135 to 171, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromabout 1.74 to about 1.61.

173. The composition of any one of claim 135 to 172, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromabout 1.71 to about 1.65.

174. The composition of any one of claim 135 to 173, where it comprises a triarylsulfoniumcarboxylate having structure (C-2) as defined in claim 140, and the mole ratio of said componentA, said aryl sulfate aryl onium salt PAG ranges to said acid quencher of structure (C-2) is fromabout 1.69 to about 1.66.

175. The composition of any one of claim 135 to 174, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00845 to about0.012675.

176. The composition of any one of claim 135 to 175, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00951 to about0.01162.

177. The composition of any one of claim 135 to 176, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfateAZ75195PCaryl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.00993 to about0.03438.

178. The composition of any one of claim 135 to 177, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03114 to about0.03373.

179. The composition of any one of claim 135 to 178, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03179 to about0.03308.

180. The composition of any one of claim 135 to 179, where it comprises an amide havingstructure (C-3) as defined in claim 142, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-3) is from about 0.03211 to about0.0328.

181. The composition of any one of claim 135 to 180, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.582 to about 2.373.

182. The composition of any one of claim 135 to 181, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.779 to about 2.175.

183. The composition of any one of claim 135 to 182, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.859 to about 2.096.

184. The composition of any one of claim 135 to 183, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.898 to about 2.0567.

185. The composition of any one of claim 135 to 184, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfatearyl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.938 to about 2.0171.

186. The composition of any one of claim 135 to 185, where it comprises an amine havingstructure (C-5) as defined in claim 138, and the mole ratio of said component A, said aryl sulfateAZ75195PCaryl onium salt PAG ranges to said acid quencher of structure (C-5) is about 1.958 to about 1.997.

187. The composition of any one of claim 135 to 186, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 61.9 to about 41.2.

188. The composition of any one of claim 135 to 187, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 56.7 to about 46.4.

189. The composition of any one of claim 135 to 188, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 54.6 to about 48.5.

190. The composition of any one of claim 135 to 189, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 53.6 to about 49.5.

191. The composition of any one of claim 135 to 190, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 52.6 to about 50.5.

192. The composition of any one of claim 135 to 191, where it comprises a PAG of structure (F-1) as defined in claim 136 and a triarylsulfonium carboxylate having structure (C-2) as defined inclaim 140, and the mole ratio of said component F, said PAG of structure (F-1) to said acid quencherof structure (C-2), is about 52.1 to about 51.0.

193. The composition of any one of claim 135 to 192, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.260 to about 0.391.

194. The composition of any one of claim 135 to 193, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and theAZ75195PCmole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.293 to about 0.358.

195. The composition of any one of claim 135 to 194, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.306 to about 0.345.

196. The composition of any one of claim 135 to 195, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.313 to about 0.339.

197. The composition of any one of claim 135 to 196, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.319 to about 0.332.

198. The composition of any one of claim 135 to 197, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amide having structure (C-3) as defined in claim 142, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-3), is about 0.322 to about 0.329.

199. The composition of any one of claim 135 to 198, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 19.28 to about 28.92.

200. The composition of any one of claim 135 to 199, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 21.69 to about 26.51.

201. The composition of any one of claim 135 to 200, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 22.65 to about 25.55.

202. The composition of any one of claim 135 to 201, where it comprises a PAG of structure (F-AZ75195PC 1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 23.14 to about 25.06.

203. The composition of any one of claim 135 to 202, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 23.62 to about 24.58.

204. The composition of any one of claim 135 to 203, where it comprises a PAG of structure (F-1) as defined in claim 136 and an amine having structure (C-5) as defined in claim 138, and themole ratio of said component F, said PAG of structure (F-1) to said acid quencher of structure (C-5), is from about 23.62 to about 24.58.

205. The composition of any one of claim 135 to 204, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.399 to about 0.266.

206. The composition of any one of claim 135 to 205, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.366 to about 0.300.

207. The composition of any one of claim 135 to 206, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claim140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.352 to about 0.312.

208. The composition of any one of claim 135 to 207, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claimAZ75195PC 140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.346 to about 0.319.

209. The composition of any one of claim 135 to 208, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.346 to about 0.319.

210. The composition of any one of claim 135 to 209, where it comprises a PAG of structure (F-1) as defined in claim 136, a triarylsulfonium carboxylate having structure (C-2) as defined in claim 140, an amide having structure (C-3) as defined in claim 142 and an amine having structure (C-5)as defined in claim 138, and the mole ratio of the sum of PAG of structure (F-1) and said aryl sulfatearyl onium salt PAG to the sum of moles of an acid quencher of structures (C-2), (C-3) and (C-5)is about 0.339 to about 0.326.

211. The composition of any one of claim 135 to 210, where it comprises an acid quencher havingstructure (C-2) as defined in claim 140 and said acid quencher of structure (C-2) has structure (C-2a),212. The composition of any one of claim 135 to 211, where it comprises an acid quencher havingstructure (C-3) as defined in claim 142 and said acid quencher of structure (C-3) has structure (C-3a),AZ75195PC213. The composition of any one of claim 135 to 212, it comprises an acid quencher havingstructure (C-5) as defined in claim 138 and where said acid quencher of structure (C-5) has structure(C-5a),214. The composition of any one of claim 135 to 213, where it comprises a PAG of structure (F-1) as defined in claim 136 and said component F, said PAG of structure (F-1) has structure (F-1a),215. The composition of any one of claim 135 to 214, wherein said Component D, said organicspin casting solvent is selected from a glycol ether derivative, a glycol ether ester derivative, an alkyl carboxylate, an alkyl carboxylates of di-basic carboxylic acid, an alkyl dicarboxylates, a alkyl ester of a hydroxyalkylcarboxylic acid, a ketone ester, a ketone, a ketone ether, a ketone alcohol, a ketal, an acetal and a lactones, an amide and mixtures thereof.

216. The composition of any one of claims 1 to 215, which additionally comprises a surfactant.

217. A process of forming a positive image by exposure to radiation, comprising step ia) to va)ia) coating any one of the compositions of claims 1 to 216, on a substrate, forming a coated film, iia) baking said coated film to form a baked film, iiia) exposing regions of said baked film through a mask with radiation, forming exposed and unexposed regions, iva) baking said radiation exposed film of step iiia),va) developing away the unexposed regions of said radiation exposed and baked film of step iva)forming a positive image on said substrate.

218. The use of the composition of any one of claims 1 to 216 for coating a substrate, preferablyin a photolithographic process.

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