Member for semiconductor manufacturing device

Abstract

A member for a semiconductor manufacturing device according to the present invention comprises: a ceramic substrate having an upper surface for mounting a wafer and a lower surface on the opposite side from the upper surface; a plug arrangement hole penetrating the ceramic substrate in the vertical direction; a dielectric plug embedded in the plug arrangement hole, the dielectric plug having a lower surface and a gas passage part penetrating the dielectric plug; a film that has a volume resistivity lower than that of the dielectric plug and covers at least a portion of the lower surface of the dielectric plug; a conductive base plate adhered to the lower surface of the ceramic substrate via a resin adhesive layer; a gas passage for supplying gas to the gas passage part of the dielectric plug through the base plate and the resin adhesive layer; and a conductive connection part that is provided in the gas passage, and has an upper end electrically connected to the film and a lower end electrically connected to the base plate. At least a portion of the film covering the lower surface of the dielectric plug is in contact with the resin adhesive layer.

Description

Semiconductor manufacturing equipment components

[0001] The present invention relates to a member for a semiconductor manufacturing device.

[0002] Conventionally, semiconductor manufacturing equipment components have been known that are used for holding wafers, controlling their temperature, transporting them, etc. These types of semiconductor manufacturing equipment components are also called wafer mounting tables, electrostatic chucks, susceptors, etc., and generally have the function of applying electrostatic attraction power to a built-in electrode to attract the wafer by electrostatic force, and some are also known to have the function of controlling the wafer temperature by flowing gas between the wafer mounting surface and the wafer to be attracted.

[0003] A known component for semiconductor manufacturing equipment includes, for example, a ceramic substrate having an upper surface for placing a wafer and a lower surface opposite the upper surface, a gas passage that passes through the ceramic substrate in the vertical direction, and a conductive base plate joined to the lower surface of the ceramic substrate.

[0004] In such semiconductor manufacturing equipment components, a large potential difference can occur between the wafer and the base plate, which can cause discharge (dielectric breakdown) between the wafer and the base plate through the gas passage. For this reason, various technologies have been developed to suppress discharge.

[0005] Patent Document 1 proposes a plug having a gas flow path portion that bends and penetrates a dense main body portion in the thickness direction. It also proposes making at least a portion of the entire length of the gas flow path portion insulating and porous. Patent Document 1 describes that in the porous section, three-dimensionally (e.g., a three-dimensional network) continuous pores present within the porous portion serve as the gas flow path, thereby increasing the effective flow path length within the gas flow path portion compared to when the entire gas flow path portion is hollow, making it less likely for discharge to occur.

[0006] Patent Document 2 discloses an electrostatic chuck comprising: a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed and a second main surface opposite the first main surface; a base plate supporting the ceramic dielectric substrate and having a gas inlet passage; and a first porous portion provided between the base plate and the first main surface of the ceramic dielectric substrate and at a position facing the gas inlet passage, wherein the ceramic dielectric substrate has a first hole portion located between the first main surface and the first porous portion, and the first porous portion has a porous portion having a plurality of holes and a first dense portion that is denser than the porous portion, and when projected onto a plane perpendicular to a first direction from the base plate toward the ceramic dielectric substrate, the first dense portion overlaps with the first hole portion, but the porous portion does not overlap with the first hole portion.

[0007] According to Patent Document 2, the electrostatic chuck is configured such that the first dense portion and the first hole portion overlap, so that the generated current tends to bypass the first dense portion, which increases the distance (conductive path) through which the current flows, making it difficult for electrons to be accelerated, and ultimately suppressing the occurrence of arc discharge.

[0008] Patent Document 3 describes an electrostatic chuck including: a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed and a second main surface opposite the first main surface; a base plate supporting the ceramic dielectric substrate and having a gas inlet passage; and a first porous portion provided between the base plate and the first main surface of the ceramic dielectric substrate and facing the gas inlet passage, wherein the first porous portion has a plurality of sparse portions having a plurality of holes and a dense portion having a density higher than a density of the sparse portions, each of the plurality of sparse portions extending in a first direction from the base plate toward the ceramic dielectric substrate, the dense portion being located between the plurality of sparse portions, the sparse portion having the holes and a wall portion provided between the holes, and a minimum value of a dimension of the wall portion being smaller than a minimum value of a dimension of the dense portion in a second direction substantially perpendicular to the first direction.

[0009] According to Patent Document 3, this electrostatic chuck has sparse and dense portions extending in a first direction in the first porous portion, and therefore is capable of improving the mechanical strength (rigidity) of the first porous portion while ensuring resistance to arc discharge and gas flow rate.

[0010] Patent Document 4 describes an invention aimed at providing a holding device capable of controlling the temperature of an object with high accuracy while reducing the occurrence of abnormal discharge. Specifically, the holding device described includes a ceramic substrate having a first surface for holding an object and a second surface opposite the first surface, a base member disposed on the second surface side of the ceramic substrate, the base member having a third surface opposite the ceramic substrate, and a bonding material disposed between the ceramic substrate and the base member, wherein (1) the ceramic substrate and the base member are formed with a flow path that allows a fluid to move between an outlet hole provided in the first surface and an inlet hole provided in the third surface, or (2) the ceramic substrate is formed with a flow path that allows a fluid to move between an outlet hole provided in the first surface and an inlet hole provided in the second surface, the flow path having a porous ceramic region, the porous ceramic region including a sparse region and a dense region having a lower porosity than the sparse region and disposed closer to the first surface than the sparse region.

[0011] In Patent Document 5, a wafer mounting table is provided with an insulating first porous portion disposed within a through-hole in a ceramic plate, and an insulating second porous portion fitted in a recess provided on the ceramic plate side of a base plate so as to face the first porous portion. Gas supplied to a gas inlet passage passes through the second and first porous portions and flows into the space between the wafer mounting surface and the wafer, where it is used to cool the object. The publication describes that the presence of the first and second porous portions ensures a gas flow rate from the gas inlet passage to the wafer mounting surface while suppressing the occurrence of discharge (arc discharge) caused by plasma during wafer processing.

[0012] JP 2022-119338 A JP 2022-31333 A JP 2019-165194 A JP 2022-176701 A JP 2020-72262 A

[0013] As described above, in order to suppress discharges occurring between the wafer and the base plate in semiconductor manufacturing equipment components, various technologies have been proposed to improve the structure of the gas passages that vertically penetrate the ceramic substrate. However, it is believed that developing a technology to suppress discharges using a different approach would be meaningful for the technological advancement of semiconductor manufacturing equipment components. In particular, there is still room for improvement in technology to suppress discharges that occur near the joint between the ceramic substrate and the base plate in the gas passages that vertically penetrate the ceramic substrate.

[0014] In view of the above circumstances, in one embodiment, the present invention aims to provide a component for semiconductor manufacturing equipment that is suitable for suppressing discharge that occurs near the joint between the ceramic substrate and the base plate in a gas passage that penetrates the ceramic substrate in the vertical direction.

[0015] The present inventors have conducted extensive research to solve the above problems and have created the present invention, which is exemplified below.

[0016] [Aspect 1] A ceramic substrate having an upper surface for mounting a wafer and a lower surface opposite to the upper surface; a plug placement hole penetrating the ceramic substrate in the vertical direction; a dielectric plug embedded in the plug placement hole, the dielectric plug having a lower surface and a gas passage portion penetrating the dielectric plug; a first film covering at least a part of the lower surface of the dielectric plug and made of a material having a volume resistivity lower than that of a material constituting the dielectric plug; a conductive base plate bonded to the lower surface of the ceramic substrate via a resin adhesive layer; a gas passage passing through the base plate and the resin adhesive layer to supply gas to the gas passage portion of the dielectric plug; and a conductive connecting portion provided in the gas passage, the conductive connecting portion having an upper end electrically connected to the first film and a lower end electrically connected to the base plate, A semiconductor manufacturing equipment member, wherein at least a portion of the first film is in contact with the resin adhesive layer, or at least a portion of the lower surface of the ceramic substrate is coated with a second film made of a material having a volume resistivity lower than that of the material constituting the ceramic substrate, and at least a portion of the second film is in contact with both the resin adhesive layer and the first film. [Aspect 2] A semiconductor manufacturing equipment member according to Aspect 1, wherein at least a portion of the first film is in contact with the resin adhesive layer. [Aspect 3] A semiconductor manufacturing equipment member according to Aspect 1 or 2, wherein at least a portion of the lower surface of the ceramic substrate is coated with a second film made of a material having a volume resistivity lower than that of the material constituting the ceramic substrate, and at least a portion of the second film is in contact with both the resin adhesive layer and the first film. [Aspect 4] A semiconductor manufacturing equipment member according to any of Aspects 1 to 3, wherein the connecting portion has an elastic member, and the elastic member is pressed and compressed by the first film on the lower surface of the dielectric plug. [Aspect 5] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 4, wherein the connecting portion has an elastic member, and the elastic member is pressed and compressed by the second film on the lower surface of the ceramic substrate.[Aspect 6] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 5, wherein the material constituting the dielectric plug and the material constituting the ceramic substrate both contain one or more selected from aluminum oxide, aluminum nitride, quartz, and zirconia. [Aspect 7] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 6, wherein the first film on the lower surface of the dielectric plug contains a metal, carbon, a conductive ceramic, or a composite material of two or more of these. [Aspect 8] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 7, wherein the second film on the lower surface of the ceramic substrate contains a metal, carbon, a conductive ceramic, or a composite material of two or more of these. [Aspect 9] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 8, wherein the dielectric plug is an inorganic dielectric plug having a dense outer peripheral surface, and the outer peripheral surface is embedded in the plug placement hole so that the outer peripheral surface directly fits into the inner peripheral surface of the plug placement hole. [Aspect 10] The semiconductor manufacturing equipment member according to any one of Aspects 1 to 9, wherein the inner peripheral edge of the through-hole of the resin adhesive layer that defines the gas passage is configured so that the gas passage becomes wider upward. [Aspect 11] The semiconductor manufacturing equipment member according to Aspect 10, wherein the inner peripheral surface of the plug placement hole that fits with the dense outer peripheral surface of the dielectric plug is dense.

[0017] A semiconductor manufacturing equipment component according to one embodiment of the present invention is effective in suppressing discharges that occur between a wafer and a base plate, particularly discharges that occur near the joint between the ceramic substrate and the base plate in a gas passage that passes through the ceramic substrate in the vertical direction.

[0018] 1 is a schematic plan view of a semiconductor manufacturing equipment member according to one embodiment of the present invention; FIG. 2 is an example of a schematic AA cross-sectional view of FIG. 1; FIG. 3 is another example of the schematic AA cross-sectional view of FIG. 1; FIG. 4 is a manufacturing process diagram of a semiconductor manufacturing equipment member according to one embodiment of the present invention.

[0019] Next, embodiments of the present invention will be described in detail with reference to the drawings. It should be understood that the present invention is not limited to the following embodiments, and that appropriate design changes, improvements, and the like may be made based on the common knowledge of those skilled in the art without departing from the spirit of the present invention. Furthermore, in this specification, "upper" and "lower" are used for convenience to represent the relative positional relationship when the semiconductor manufacturing equipment component is placed on a horizontal surface with the base plate facing downwards, and do not represent absolute positional relationships. Therefore, depending on the orientation of the semiconductor manufacturing equipment component, "upper" and "lower" may become "lower" and "upper," "left" and "right," or "front" and "rear."

[0020] 2A and 2B , a semiconductor manufacturing equipment member 10 according to one embodiment of the present invention includes: a ceramic substrate 20 having an upper surface 21 for mounting a wafer thereon and a lower surface 23 opposite to the upper surface 21; a plug arrangement hole 50 vertically penetrating the ceramic substrate 20; a dielectric plug 55 embedded in the plug arrangement hole 50, the dielectric plug 55 having a lower surface 55 a and a gas passage 55 c penetrating the dielectric plug 55; a first film 56 covering at least a portion of the lower surface 55 a of the dielectric plug 55 and made of a material having a lower volume resistivity than a material constituting the dielectric plug 55; a conductive base plate 30 bonded to the lower surface 23 of the ceramic substrate 20 via a resin adhesive layer 40; and a gas passage 60 for supplying gas to the gas passage 55 c of the dielectric plug 55 through the base plate 30 and the resin adhesive layer 40. a conductive connecting portion (70) provided in the gas passage (60), the conductive connecting portion (70) having an upper end (70a) electrically connected to the first membrane (56) and a lower end (70b) electrically connected to the base plate (30).

[0021] The ceramic substrate 20 may be a circular plate (e.g., 300 to 400 mm in diameter and 1 to 5 mm in thickness) made of ceramic, such as sintered alumina or sintered aluminum nitride. The upper surface 21 of the ceramic substrate 20 has a wafer mounting surface on which a wafer W is mounted. The ceramic substrate 20 incorporates an electrode 22. As shown in FIG. 1 , an annular seal band 21a is formed on the upper surface 21 of the ceramic substrate 20 along its outer edge, and multiple small protrusions 21b are formed on the entire inner surface of the seal band 21a. The shape of the small protrusions 21b is not limited, but may be, for example, a cylinder or a rectangular column. The seal band 21a and the small protrusions 21b preferably have the same height, which may be, for example, 5 to 100 μm, typically 10 to 30 μm. The electrode 22 is a planar electrode used as an electrostatic electrode and is connected to an external DC power source via a power supply member (not shown). A low-pass filter may be disposed along the power supply member. The power supply member is electrically insulated from the resin adhesive layer 40 and the base plate 30. When a DC voltage is applied to this electrode 22, the wafer W is attracted and fixed to the wafer mounting surface (specifically, the upper surfaces of the seal bands 21a and the small protrusions 21b) by electrostatic attraction, and when the application of the DC voltage is stopped, the wafer W is released from the attraction and fixation to the wafer mounting surface. Note that the portion of the upper surface 21 of the ceramic substrate 20 where the seal bands 21a and the small protrusions 21b are not provided is referred to as the reference surface 21c.

[0022] Instead of or in addition to the electrostatic electrode, a heater electrode (resistance heating element) may be built in as the electrode 22. In this case, a heater power supply is connected to the heater electrode. The ceramic substrate 20 may have one layer of electrodes built in, or two or more layers of electrodes built in with gaps between them.

[0023] The conductive base plate 30 is a circular plate (having the same diameter as or larger than the ceramic substrate 20) with good electrical and thermal conductivity. A refrigerant flow path 32 through which a refrigerant circulates may be formed within the base plate 30. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, preferably electrically insulating. Examples of electrically insulating liquids include a fluorine-based inert liquid. For example, the refrigerant flow path 32 can be formed in a single stroke across the entire base plate 30 in a plan view from one end (inlet) to the other end (outlet). One end and the other end of the refrigerant flow path 32 are connected to a supply port and a recovery port, respectively, of an external refrigerant device (not shown). The refrigerant supplied from the supply port of the external refrigerant device to one end of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns from the other end of the refrigerant flow path 32 to the recovery port of the external refrigerant device, and is temperature-adjusted before being supplied again from the supply port to one end of the refrigerant flow path 32. The base plate 30 is connected to a radio frequency (RF) power source and can also be used as an RF electrode.

[0024] The base plate 30 may be made of a metal material or a composite material of metal and ceramic. Metal materials include Al, Ti, Mo, W, and alloys thereof. Metal-ceramic composite materials include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include a material containing Si, SiC, and Ti (also known as SiSiCTi), a porous SiC material impregnated with Al and / or Si, and a composite material of AlO and TiC. A porous SiC material impregnated with Al is called AlSiC, and a porous SiC material impregnated with Si is called SiSiC. It is preferable to select a material for the base plate 30 with a thermal expansion coefficient close to that of the ceramic substrate 20. For example, if the ceramic substrate 20 is made of alumina, the base plate is preferably made of SiSiCTi or AlSiC.

[0025] As shown in FIGS. 2A and 2B , the upper surface 31 of the base plate 30 is bonded to the lower surface 23 of the ceramic substrate 20 via a resin adhesive layer 40. The resin adhesive layer 40 can be composed of, for example, a cured product of a silicone resin adhesive, an epoxy resin adhesive, an acrylic resin adhesive, or a urethane resin adhesive. The uncured adhesive is preferably provided in the form of a resin adhesive sheet. While there are no particular limitations on the curing method, examples include a heat curing method. To increase adhesive strength, a method of curing under heat and pressure (e.g., autoclave) is preferred. To increase the uniformity of the thickness of the resin adhesive layer 40, a spacer (not shown) may be disposed between the upper surface 31 of the base plate 30 and the lower surface 23 of the ceramic substrate 20.

[0026] As shown in FIGS. 2A and 2B , the plug arrangement hole 50 is a hole that penetrates the ceramic substrate 20 in the vertical direction. The plug arrangement hole 50 is a gas passage that extends from the lower surface 23 of the ceramic substrate 20 to the reference surface 21c of the upper surface 21. The horizontal opening diameter of the plug arrangement hole 50 (meaning the equivalent circular diameter when the cross section of the plug arrangement hole is not circular) is not limited, but can be, for example, within a range of 1 to 5 mm at any height position, and can typically be within a range of 3 to 4 mm. In this embodiment, the plug arrangement hole 50 has a diameter that decreases from bottom to top, and the inner circumferential surface 50a of the plug arrangement hole 50 is a tapered surface. This reduces the possibility that the dielectric plug 55 will move upward, weakening its contact with the connecting portion 70 or being pulled out of the ceramic substrate 20, even if an upward force is applied from the connecting portion 70 to the dielectric plug 55.

[0027] As shown in FIG. 1 , a plurality of plug arrangement holes 50 (36 in this example) are provided. Each plug arrangement hole 50 may have, for example, a truncated cone-shaped or truncated pyramid-shaped space. A dielectric plug 55 is embedded in each plug arrangement hole 50. The plug 55 has a gas passage 55c penetrating the interior of the plug 55. In one embodiment, the gas passage 55c has one opening on the lower surface 55a of the plug 55 and the other opening on the upper surface 55d, penetrating the interior of the plug 55 in the vertical direction. In another embodiment, the gas passage 55c has one opening on the lower surface 55a of the plug 55 and the other opening on the outer peripheral surface 55b, penetrating the interior of the plug 55. Here, the dielectric plug 55 is fixed in a state where it is filled in the plug arrangement hole 50. The fixing method is not particularly limited, and may be, for example, such that the outer peripheral surface 55b of the dielectric plug 55 directly fits into the inner peripheral surface 50a of the plug arrangement hole 50. An example of a direct fitting method is to embed the dielectric plug 55 by press-fitting it into the plug arrangement hole 50. The dielectric plug 55 preferably has the same outer shape as the plug arrangement hole 50 (e.g., a truncated cone or a truncated pyramid). In this case, to obtain the desired fixing strength, the horizontal cross-sectional diameter of the dielectric plug 55 at any height position is preferably slightly larger (e.g., approximately 5 to 20 μm in equivalent circle diameter) than the cross-sectional diameter of the plug arrangement hole 50 at the same height position. Another example of a direct fitting method is to thread a male threaded portion on the outer peripheral surface 55b of the dielectric plug 55 into a female threaded portion on the inner peripheral surface 50a of the plug arrangement hole 50. Furthermore, the outer peripheral surface 55b of the dielectric plug 55 may be bonded to the inner peripheral surface 50a of the plug arrangement hole 50 via an adhesive. However, since the fixing method using an adhesive is prone to a decrease in the fixing strength of the plug due to wear or deterioration of the adhesive, it is preferable to adopt a direct fitting method. By directly fitting the two, no gap is created between the dielectric plug 55 and the plug placement hole 50 due to deterioration caused by corrosion or erosion of the adhesive. This has the advantage of preventing discharge and detachment of the dielectric plug 55 due to deterioration of the adhesive.

[0028] The height position of the upper surface 55d of the dielectric plug 55 is not particularly limited. Therefore, it may be the same height as the reference surface 21c of the ceramic substrate 20, or it may be a different height. However, it is preferable that the height position of the upper surface 55d of the dielectric plug 55 be the same height as the reference surface 21c. When the upper surface of the dielectric plug 55 is to be lower than the reference surface 21c, it is preferable to position it at a lower position within a range of 0.5 mm or less (preferably 0.2 mm or less, more preferably 0.1 mm or less) in order to suppress the occurrence of discharge. When the upper surface of the dielectric plug 55 is to be higher than the reference surface 21c, there are no particular limitations as long as it is lower than the upper surfaces of the small protrusions 21b and the outflow of gas from the dielectric plug 55 is not hindered.

[0029] The height position of the lower surface 55a of the dielectric plug 55 is not particularly limited as long as at least a portion of the first film 56 can be in contact with the resin adhesive layer 40. Therefore, the height may be the same as or different from the lower surface 23 of the ceramic substrate 20. For example, the lower surface 55a of the dielectric plug 55 may protrude downward from the lower surface 23 of the ceramic substrate 20, or the lower surface 55a of the dielectric plug 55 may be located higher than the lower surface 55a of the ceramic substrate 20.

[0030] The material constituting the dielectric plug 55 is preferably an inorganic dielectric, such as a ceramic. In a preferred embodiment, the material may contain one or more materials selected from aluminum oxide, aluminum nitride, quartz, and zirconia. The dielectric plug 55 may also be composed of only one or two materials selected from aluminum oxide and aluminum nitride, excluding impurities. For example, multiple plugs made of different materials may be stacked vertically. In this case, the upper plug may be made of a ceramic with a higher volume resistivity than the lower plug, and the lower plug may be in contact with the base plate or connecting portion, thereby lowering the potential of the lower plug and suppressing discharge in the lower area where the space is large and discharge is likely to occur. Specifically, the upper plug may be made of aluminum oxide and the lower plug may be made of SiC, and they may be arranged in order in the plug placement hole.

[0031] From the viewpoint of maintaining the fixing strength of the dielectric plug 55, it is preferable that the difference in thermal expansion coefficient between the dielectric plug 55 and the ceramic substrate 20 is small. For this reason, it is preferable that the material constituting the dielectric plug 55 and the material constituting the ceramic substrate 20 both contain one or more selected from aluminum oxide and aluminum nitride, and it is more preferable that the material compositions are the same.

[0032] The dielectric plug 55 preferably has a dense outer peripheral surface 55b. If the dielectric plug 55 has a dense outer peripheral surface 55b, the fixing strength of the dielectric plug 55 can be increased by sufficient friction, particularly when the dielectric plug 55 is directly fitted to the inner peripheral surface 50a of the plug placement hole 50. A dense outer peripheral surface 55b means that the porosity of the outer peripheral surface 55b is 10% or less. The porosity of the outer peripheral surface 55b is preferably 5% or less, and more preferably 1% or less. The porosity of the outer peripheral surface 55b is measured by the following method. The dielectric plug 55 is cut so that a cross section perpendicular to the outer peripheral surface 55b of the dielectric plug 55 is exposed. Next, a portion of the cross section from the outer peripheral surface 55b to a thickness of 100 μm is observed at a magnification of 3000 times using a scanning electron microscope (SEM) to measure the porosity of the dielectric plug 55. 2 The thickness of the SEM image is observed to determine the area ratio of pores observed in the thickness portion. Specifically, the SEM image is analyzed, and a threshold is determined using discriminant analysis (Otsu's binarization) based on the brightness distribution of the brightness data of the pixels in the image. Then, based on the determined threshold, each pixel in the image is binarized into an object portion and a pore portion, and the area of ​​the object portion and the area of ​​the pore portion are calculated. Then, the ratio of the area of ​​the pore portion to the total area (the total area of ​​the object portion and the pore portion) is determined. Similar measurements are performed at five locations on the same dielectric plug 55, and the average value of the five locations is taken as the porosity of the outer peripheral surface 55b of the dielectric plug 55.

[0033] In particular, when the outer peripheral surface 55b of the dielectric plug 55 is directly fitted to the inner peripheral surface 50a of the plug placement hole 50, it is preferable that the inner peripheral surface 50a of the plug placement hole 50 is also dense in order to increase the fixing strength due to friction of the dielectric plug 55. A dense inner peripheral surface 50a means that the porosity of the inner peripheral surface 50a is 5% or less. The porosity of the inner peripheral surface 50a is preferably 1% or less, and more preferably 0.5% or less. Because the inner peripheral surface 50a is a portion of the ceramic substrate 20, the porosity value of the ceramic substrate 20 is considered to be the porosity of the inner peripheral surface 50a in this specification. The porosity of the ceramic substrate 20 is defined as the open porosity measured in accordance with JIS R1634:1998, and the measured value is the average open porosity of five samples taken evenly from the ceramic substrate 20.

[0034] The dielectric plug 55 has a gas passage 55c penetrating therethrough. In one embodiment, the gas passage 55c is configured so that gas flowing in from the lower surface 55a of the dielectric plug 55 flows through the gas passage 55c and exits from the upper surface 55d of the dielectric plug 55. For example, the gas passage 55c may be formed by forming one or more gas flow paths penetrating vertically through a dense material that does not allow gas flow. In this case, the gas flowing in from the lower surface 55a of the dielectric plug 55 flows through the gas path and exits from the upper surface 55d of the dielectric plug 55. The gas path may be linear, curved, or a combination of both. However, from the viewpoint of suppressing discharge, a shape in which the path length is longer than the vertical length of the dielectric plug 55, such as a bent shape such as a spiral or zigzag, is preferred. The dielectric plug 55 being dense means that the porosity of the dielectric plug 55 is 5% or less. The porosity of the dielectric plug 55 is preferably 1% or less, and more preferably 0.5% or less. The porosity of the dielectric plug 55 is measured by the following method: The dielectric plug 55 is cut so that a cross section passing through the central axis extending in the vertical direction of the dielectric plug 55 is exposed. Next, the part of the cross section excluding the gas flow path is observed at a magnification of 3000 times using a scanning electron microscope (SEM) at a 2200 μm diameter. 2The area ratio of the pores observed in the area is determined. Specifically, the SEM image is analyzed, and a threshold is determined using discriminant analysis (Otsu's binarization) from the brightness distribution of the brightness data of the pixels in the image. Then, based on the determined threshold, each pixel in the image is binarized into an object portion and a pore portion, and the area of ​​the object portion and the area of ​​the pore portion are calculated. Then, the ratio of the area of ​​the pore portion to the total area (the total area of ​​the object portion and the pore portion) is determined. Similar measurements are performed at five locations on the same dielectric plug 55, and the average value of the five locations is taken as the porosity of the dielectric plug 55.

[0035] Examples of methods for providing a gas flow path in such a dense dielectric plug 55 include a method of firing a molded body formed using additive manufacturing technology such as a 3D printer, and a method of firing a molded body formed by mold casting using a master model produced by the lost wax method. Mold casting is disclosed in, for example, Japanese Patent No. 7144603.

[0036] Alternatively, a porous portion may be provided in the dielectric plug 55 to form the gas passage 55c. When the gas passage 55c is porous, gas flowing in from the lower surface 55a of the dielectric plug 55 flows through the gas passage 55c, which is formed by a large number of continuous pores, and then flows out from the upper surface 55d of the dielectric plug 55. Because the three-dimensionally (e.g., three-dimensionally network-like) continuous pores present in the porous portion serve as gas flow paths, the effective flow path length within the gas passage 55c is longer than when the gas passage 55c is hollow, resulting in the effect of making it less likely for discharge to occur. The porous gas passage can be formed on the inner periphery of the dense outer surface. It is also possible to form one or more additional gas flow paths within the porous gas passage.

[0037] Therefore, the gas passage 55c may be hollow or porous. It is preferable that at least a portion of the gas passage 55c is porous. The gas passage 55c being hollow means that the porosity of the gas passage 55c is 100%. The gas passage 55c being porous means that the porosity of the gas passage 55c is greater than 5% and less than 100%. A larger porosity of the gas passage 55c is preferable to reduce the airflow resistance. Therefore, the porosity of the gas passage 55c is preferably 10% or more, and more preferably 40% or more. On the other hand, the porosity of the gas passage 55c is preferably 50% or less in order to increase the flow path length of the dielectric plug 55 and ensure structural strength. Therefore, the porosity of the gas passage 55c is preferably 10% or more and 50% or less, and more preferably 40% or more and 50% or less. The porosity of the gas passage 55c is measured by mercury intrusion porosimetry (JIS R1655:2003).

[0038] The porosity of the dielectric plug and the ceramic substrate can be controlled, for example, by adjusting the content of the pore-forming material in the raw material composition before firing the ceramics that constitute them. For example, to densify the outer peripheral surface of the dielectric plug, the amount of pore-forming material near the outer peripheral surface may be partially reduced or eliminated. Also, to densify the inner peripheral surface of the plug placement hole, the amount of pore-forming material near the inner peripheral surface may be partially reduced or eliminated.

[0039] The lower surface 55a of the dielectric plug 55 is covered with a first film 56 made of a material having a volume resistivity lower than that of the material making up the dielectric plug 55. The first film 56 may cover a part of the lower surface 55a of the dielectric plug 55, or may cover the entire lower surface 55a. This is because the first film 56 is thin and allows gas to pass through regardless of whether it is dense or porous. The volume resistivity of the material making up the first film 56 is 74×10 at 20°C. -8 It is preferable that the resistance is Ω·m or less, and 60×10 -8 It is preferable that the resistance is Ω·m or less, and 53×10 -8Although there is no particular lower limit to the volume resistivity of the material constituting the first film 56, from the viewpoint of availability, it is preferable that the volume resistivity is 2×10 -8 It is preferable that the resistance is Ω·m or more, and 3×10 -8 It is preferable that the resistance is Ω·m or more, and 10×10 -8 Therefore, the volume resistivity of the material constituting the first film 56 is preferably 2×10 at 20° C. -8 Ω・m or more 74×10 -8 It is preferable that the resistance is Ω·m or less, and 3×10 -8 Ω・m or more 60×10 -8 More preferably, it is 10×10 Ω·m or less. -8 Ω・m or more 53×10 -8 It is even more preferable that the volume resistivity is Ω·m or less. The volume resistivity of the material constituting the first film 56 is measured by a method in accordance with JIS C2525:1999.

[0040] From the viewpoint of suppressing discharge, it is preferable that not only the lower surface 55a of the dielectric plug 55 but also the lower surface 23 of the ceramic substrate 20 be covered with a second film 57 made of a material having a volume resistivity lower than that of the material constituting the ceramic substrate 20. At least a portion of the second film 57 is preferably in contact with the resin adhesive layer 40 and the first film 56 (see FIG. 2B). In this case, discharge can be suppressed even if at least a portion of the first film 56 is not in contact with the resin adhesive layer 40. The volume resistivity of the material constituting the second film 57 is 74×10 at 20° C. -8 It is preferable that the resistance is Ω·m or less, and 60×10 -8 It is preferable that the resistance is Ω·m or less, and 53×10 -8 Although there is no particular lower limit to the volume resistivity of the material constituting the second film 57, from the viewpoint of availability, it is preferable that the volume resistivity is 2×10 -8 It is preferable that the resistance is Ω·m or more, and 3×10 -8 It is preferable that the resistance is Ω·m or more, and 10×10 -8 Therefore, the volume resistivity of the material constituting the second film 57 is preferably 2×10 Ω·m or more at 20° C. -8Ω・m or more 74×10 -8 It is preferable that the resistance is Ω·m or less, and 3×10 -8 Ω・m or more 60×10 -8 More preferably, it is 10×10 Ω·m or less. -8 Ω・m or more 53×10 -8 It is even more preferable that the volume resistivity is Ω·m or less. The volume resistivity of the material constituting the first film 56 is measured by a method in accordance with JIS C2525:1999.

[0041] As shown in FIG. 2A , when the underside 23 of the ceramic substrate 20 is covered with the resin adhesive layer 40 in the vicinity of the plug placement hole 50, the underside 23 of the ceramic substrate 20 is not exposed, and therefore the second film 57 does not need to be present. However, depending on the processing accuracy, the resin adhesive layer 40 may not sufficiently cover the underside 23 of the ceramic substrate 20, exposing the vicinity of the plug placement hole 50 in the underside 23 of the ceramic substrate 20. Furthermore, there are cases where at least a portion of the first film 56 does not come into contact with the resin adhesive layer 40. For this reason, as shown in FIG. 2B , the risk of discharge can be reduced by previously covering the vicinity of the plug placement hole 50 in the underside 23 of the ceramic substrate 20 with the film 57. The film 57 may cover a portion of the underside 55a of the ceramic substrate 20, or may cover the entire underside 55a. However, taking into account the processing accuracy of the resin adhesive layer 40, it is preferable from the standpoint of cost-effectiveness that the film 57 be formed within a range that does not expose the underside 23 of the ceramic substrate 20 (e.g., a distance of 1 to 10 mm in the direction perpendicular to each tangent at the inner peripheral edge of the plug placement hole 50 when observing the ceramic substrate 20 from the underside 23 side).

[0042] The average thickness of the first film 56 covering the lower surface 55a of the dielectric plug 55 and the film 57 covering the lower surface 23 of the ceramic substrate 20 is preferably 0.5 μm or more, more preferably 1 μm or more, and even more preferably 20 μm or more, to reduce contact resistance. Furthermore, the average thickness of the first film 56 and the second film 57 is preferably less than the thickness of the resin adhesive layer 40 so as not to protrude vertically beyond the resin adhesive layer 40, and is more preferably 100 μm or less, even more preferably 60 μm or less, to avoid blocking the gas inlet of the plug. Therefore, the average thickness of the first film 56 and the second film 57 is, for example, preferably 0.5 μm or more and 100 μm or less, more preferably 1 μm or more and 60 μm or less, and even more preferably 20 μm or more and 50 μm or less. The average thickness of the first film 56 and the second film 57 is measured, for example, by cross-sectional observation using an SEM. Specifically, the thickness of the film is measured at three locations at equal intervals of 5 μm per visual field using a scanning electron microscope (SEM) at a magnification of 3000 times, and the average film thickness per visual field is calculated. Similar measurements are performed on any five visual fields, and the average film thickness in the five visual fields is used as the measured value.

[0043] When the first film 56 and / or the second film 57 are electrically connected to the base plate 30 via a conductive connecting portion 70 (described later), they can be dropped to a potential similar to that of the base plate 30. Since the potential of the base plate is normally ground (GND), the potential at the lower surface 55a of the dielectric plug 55 can be dropped to ground. This makes it possible to suppress discharge near the lower surface 55a of the dielectric plug 55.

[0044] Examples of materials constituting the first film 56 and the second film 57 include metals, carbon, conductive ceramics, and the like. Composite materials of metals and ceramics are also included. Therefore, in one embodiment, the first film 56 and the second film 57 contain metals, carbon, conductive ceramics, or composite materials of two or more of these. Examples of metals include single metals selected from Au, Ag, Al, Ti, and Mo, alloys containing one or more of these metals, stainless steels such as SUS316L, and highly corrosion-resistant Ni alloys such as Hastelloy. Examples of carbon include diamond-like carbon (DLC). Examples of conductive ceramics include SiC and SiSiC. In addition to the inorganic materials, the first film 56 and the second film 57 may contain organic components. Examples of organic components include acrylic resins and epoxy resins. In addition to the metals, inorganic materials such as glass may also be included.

[0045] Methods for depositing the first film 56 on the lower surface 55 a of the dielectric plug 55 and the second film 57 on the lower surface 23 of the ceramic substrate 20 include, for example, thermal spraying, CVD, PVD (e.g., sputtering, vacuum deposition, ionization deposition, ion beam), dipping, and stamping.

[0046] 2A and 2B , the gas passage 60 for supplying gas to the gas passage portion 55c of the dielectric plug 55 through the base plate 30 and the resin adhesive layer 40 includes, for example, an adhesive layer penetration portion 64 that vertically penetrates the resin adhesive layer 40 to define the gas passage 60, a gas distribution passage 62 that communicates with the adhesive layer penetration portion 64 and extends downward from the upper surface 31 of the base plate 30, and a gas supply passage 63 that communicates with the gas distribution passage 62 and supplies gas to the gas distribution passage 62. The configuration of the gas supply passage 63 is not particularly limited. For example, one or more ring portions 63a whose passages extend concentrically with the base plate 30 in a plan view and one or more gas inlet portions 63b that supply gas introduced from the lower surface 33 of the base plate 30 to the ring portions 63a may be provided. Alternatively, multiple gas passages 60 may be configured to communicate with multiple plug placement holes 50 in a one-to-one correspondence. Other auxiliary passages (not shown) may also be provided.

[0047] As shown in FIGS. 2A and 2B , at least a portion of the film 56 covering the lower surface 55 a of the dielectric plug 55 is in contact with the resin adhesive layer 40. The location of contact is not particularly limited, but it may be, for example, contact with the inner peripheral edge 64 a of the adhesive layer penetration portion 64. Contact of the first film 56 with the resin adhesive layer 40, or contact of the second film 57 with both the first film 56 and the resin adhesive layer 40, can prevent discharge from occurring between the lower surface 55 a of the dielectric plug 55 and the resin adhesive layer 40. This is because the resin adhesive layer 40 is electrically conductive to the base plate 30. As long as the first film 56 is in contact with the resin adhesive layer 40, there are no particular limitations on the structure of the adhesive layer penetration portion 64. However, it is preferable to position the adhesive layer penetration portion 64 so that a portion overlaps with the first film 56 when viewed virtually from above, as this facilitates contact between the two. In this embodiment, as can be seen from the partially enlarged view of Figure 1 and Figure 2A, when viewed virtually from above, the point 64b of the inner edge 64a of the adhesive layer penetration portion 64 with the smallest opening diameter (in this embodiment, the lower end of the adhesive layer penetration portion 64) is located within the area defined by the outer edge 56a of the first film 56 that covers the lower surface 55a of the dielectric plug 55.

[0048] 1 and 2A, when viewed virtually from above, the inner peripheral edge 31a of the gas distribution path 62 on the upper surface 31 of the base plate 30 is located inside the area defined by the outer peripheral edge 56a of the first film 56 covering the lower surface 55a of the dielectric plug 55. This allows the diameter of the adhesive layer penetration part 64 to be reduced, making it easier to bring at least a portion of the first film 56 covering the lower surface 55a of the dielectric plug 55 into contact with the resin adhesive layer 40.

[0049] 2A and 2B , the adhesive layer through-holes 64 are holes that penetrate the resin adhesive layer 40 in the vertical direction and are gas passages that extend from the lower surface 41 of the resin adhesive layer 40 to the upper surface 42 of the resin adhesive layer 40. In this embodiment, a plurality of adhesive layer through-holes 64 (36 in this example) are provided, and are arranged in one-to-one correspondence with the plug placement holes 50.

[0050] The inner peripheral edge 64a of the adhesive layer penetration portion 64 may extend vertically, but is preferably configured so that the gas passage widens upward, as shown in Figures 2A and 2B. This creates an inclined surface on the inner peripheral edge 64a of the adhesive layer penetration portion 64. When the base plate 30 and the ceramic substrate 20 are bonded via the resin adhesive layer 40, the resin adhesive layer 40 may protrude significantly toward the lower surface 55a of the dielectric plug 55, covering the gas inlet port on the lower surface 55a and reducing the gas flow rate through the lower surface 55a of the dielectric plug 55. However, this configuration reduces the risk of the resin adhesive layer 40 covering the gas inlet port on the lower surface 55a of the dielectric plug 55.

[0051] The conductive connecting portion 70 has an upper end 70a electrically connected to the first film 56 and a lower end 70b electrically connected to the base plate 30, and is provided within the gas passage 60. Typically, the upper end 70a of the conductive connecting portion 70 contacts the first film 56, and the lower end 70b of the conductive connecting portion 70 contacts the base plate 30. The connecting portion 70 provided in one location may be composed of a single member or multiple members.

[0052] In this embodiment, the connecting portion 70 is provided as a separate body from the base plate 30, and its lower surface is in contact with the base plate 30. More specifically, the connecting portion 70 is provided across the interior of the adhesive layer penetration portion 64 of the gas passage 60 and the interior of the gas distribution path 62, and is in contact with the base plate 30 at the bottom surface 62a of the gas distribution path 62. The connecting portion 70 is in contact with the base plate 30, thereby establishing electrical conduction with the base plate 30. A plurality of connecting portions 70 (36 in this example) are provided, and are arranged in one-to-one correspondence with the dielectric plugs 55. In this embodiment, the connecting portion 70 is a coil spring that is circular in plan view. The connecting portion 70 may not be separate from the base plate 30, but may be an integrated member. For example, the connecting portion 70 may be part of the base plate 30. In this case, the connecting portion 70 may be formed as a protrusion provided on the upper surface of the bottom surface 62a of the gas distribution path 62.

[0053] The connecting portion 70 may be configured so as not to block the flow of gas through the gas passage 60, and may not allow gas to pass through the inside of the connecting portion 70. Alternatively, the connecting portion 70 may have a structure that allows gas to pass through the inside. In this case, the gas in the gas passage 60 can pass through the inside of the connecting portion 70 and flow to the plug arrangement hole 50. Examples of materials that allow gas to pass through the inside of the connecting portion 70 include a conductive mesh, a conductive fiber mass, and a conductive porous material.

[0054] The connecting portion 70 is preferably made of a material with a lower volume resistivity than the material constituting the dielectric plug 55. Examples of materials constituting the connecting portion 70 include inorganic materials such as metal, carbon, and conductive ceramics. Therefore, in one embodiment, the connecting portion 70 contains metal, carbon, conductive ceramics, or a composite material of two or more of these. Examples of composite materials include a metal and ceramics. Examples of metals include a single metal selected from Au, Ag, Al, Ti, and Mo, or an alloy containing one or more of these metals, stainless steel such as SUS316L, a highly corrosion-resistant Ni alloy such as Hastelloy, and steel. Examples of carbon include diamond-like carbon (DLC). Examples of conductive ceramics include SiC and SiSiC. When the connecting portion 70 is a conductive mesh, the mesh size may be 0.062 mm (250 mesh) to 0.154 mm (100 mesh). When the connecting portion 70 is a mass of conductive fibers, examples of the material include steel wool, carbon felt, porous metal obtained by sintering Ti fibers or Al powder, etc. When the connecting portion 70 is a conductive porous body, the porosity thereof can be, for example, 10 to 80% when measured by mercury porosimetry in accordance with JIS R1655:2003.

[0055] The connecting portion 70 is preferably an elastic member. For example, the conductive mesh and the conductive fiber mass described above are examples of elastic members. If the connecting portion 70 has directional expansion and contraction, it is preferably elastic at least in the vertical direction. The connecting portion 70 is preferably pressed and compressed by the first film 56 on the lower surface 55a of the dielectric plug 55. In this embodiment, the connecting portion 70 is an elastic member, and is compressed vertically between the dielectric plug 55 and the base plate 30 by being pressed by the first film 56 on the lower surface 55a of the dielectric plug 55. An elastic body such as a spring (e.g., a coil spring) can also be used as an elastic member having elasticity in the vertical direction. When the connecting portion 70 is pressed and compressed by the first film 56 on the lower surface 55a of the dielectric plug 55, it has the effect of pushing up the lower surface 55a of the dielectric plug 55, thereby ensuring contact of the connecting portion 70 with the first film 56 provided on the lower surface 55a of the dielectric plug 55. Furthermore, when the second film 57 is provided on the lower surface 23 of the ceramic substrate 20, the connecting portion 70 may be pressed and compressed by the second film 57 on the lower surface 23 of the ceramic substrate 20. In this case, however, in order to exert the discharge suppression effect, it is necessary for the first film 56 provided on the lower surface 55 a of the dielectric plug 55 to be in contact with the second film 57 provided on the lower surface 23 of the ceramic substrate 20. In this case, the connecting portion 70 does not need to be in direct contact with the first film 56, because the connecting portion 70 is electrically connected to the first film 56 via the second film 57.

[0056] In the above-described embodiment, lift pin holes may be provided that penetrate the semiconductor manufacturing equipment member 10. The lift pin holes are holes for inserting lift pins that move the wafer W up and down relative to the upper surface 21 of the ceramic substrate 20. When the wafer W is supported by, for example, three lift pins, the lift pin holes are provided in three locations.

[0057] The semiconductor manufacturing equipment component according to the embodiment described above effectively suppresses discharges occurring between the wafer and the base plate, particularly discharges occurring near the joint between the ceramic substrate and the base plate in the gas passage that vertically penetrates the ceramic substrate. For example, the radio frequency (RF) power source connected to the base plate can be increased in power. Furthermore, there is a desire to increase the gas pressure of the backside gas in order to further improve the efficiency of thermal conduction between the wafer and the ceramic substrate. However, increasing the gas pressure generally makes discharges more likely to occur. However, the semiconductor manufacturing equipment component 10 according to this embodiment is less likely to cause discharges even when the gas pressure is increased.

[0058] 2. Method of Using the Semiconductor Manufacturing Equipment Component Next, an example of how to use the semiconductor manufacturing equipment component 10 configured as described above will be described. First, with the semiconductor manufacturing equipment component 10 installed in a chamber (not shown), a wafer W is placed on the upper surface 21 of the ceramic substrate 20. The chamber is then depressurized using a vacuum pump to adjust the chamber to a predetermined degree of vacuum, and a voltage is applied to the electrodes 22 of the ceramic substrate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer mounting surface (specifically, the upper surfaces of the seal bands 21 a and the small protrusions 21 b).

[0059] Next, a reactive gas atmosphere of a predetermined pressure (e.g., several tens to several hundreds of Pa) is created within the chamber. Under this condition, a high-frequency voltage, such as an RF voltage, is applied between an upper electrode (not shown) installed in the ceiling of the chamber and the base plate 30 of the semiconductor manufacturing equipment member 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A coolant circulates through the coolant flow path 32 of the base plate 30. A backside gas is introduced from a gas cylinder (not shown) into the gas inlet 63b of the gas passage 60. A thermally conductive gas (e.g., He gas) can be used as the backside gas. The backside gas introduced into the gas inlet 63b passes through the ring portion 63a and the gas distribution path 62 and is distributed to the multiple plug placement holes 50, where it is supplied and sealed in the space between the backside of the wafer W and the reference surface 21c of the wafer mounting surface. The presence of this backside gas efficiently conducts heat between the wafer W and the ceramic substrate 20.

[0060] Furthermore, the provision of the dielectric plug 55 in the plug arrangement hole 50 can suppress discharge within the plug arrangement hole 50. Without the dielectric plug 55, electrons generated as a result of ionization of gas molecules by application of RF voltage accelerate and collide with other gas molecules, causing glow discharge and eventually arc discharge. However, with the dielectric plug 55, the electrons hit the dielectric plug 55 before colliding with other gas molecules, suppressing discharge.

[0061] 3. Manufacturing Method of a Semiconductor Manufacturing Equipment Component Next, a manufacturing method of a semiconductor manufacturing equipment component 10 will be described with reference to FIG. 3 . FIG. 3 is a manufacturing process diagram of a semiconductor manufacturing equipment component 10 according to one embodiment of the present invention. Here, an example is shown in which the base plate 30 is manufactured using an MMC. First, a ceramic substrate 20 incorporating an electrode 22 is manufactured ( FIG. 3A ). The manufacturing procedure for the ceramic substrate 20 is as follows: A ceramic compact incorporating an electrode 22 is manufactured. The ceramic compact may be manufactured by stacking multiple tape compacts, by mold casting, or by compacting ceramic powder. Next, the ceramic compact is hot-press fired to obtain the ceramic substrate 20. Next, a plug placement hole 50 is formed in the ceramic substrate 20 ( FIG. 3B ). The plug placement hole 50 is formed to vertically penetrate the ceramic substrate 20 while avoiding the electrode 22.

[0062] Next, the dielectric plug 55 is embedded in the plug placement hole 50 ( FIG. 3C ). Embedding the dielectric plug 55 in the plug placement hole 50 can be achieved, for example, by press-fitting the dielectric plug 55, which has been previously formed by firing or the like, into the plug placement hole 50. Alternatively, the dielectric plug 55 may be attached by forming a male thread on the outer peripheral surface of the dielectric plug 55, which has been previously formed by firing or the like, and forming a female thread on the inner peripheral surface of the plug placement hole 50, and then threading the dielectric plug 55 into the plug placement hole 50 to engage the male thread of the dielectric plug 55 with the female thread of the plug placement hole 50. Alternatively, the dielectric plug 55 may be attached by injecting a paste-like ceramic mixture, which serves as a precursor of the dielectric plug 55, into the plug placement hole 50 of the ceramic substrate 20 and firing the mixture. The dielectric plug 55 can be formed by coating the lower surface 55 a of the dielectric plug 55 with the first film 56, as described above, by sputtering or the like. The first film 56 may be formed before or after the dielectric plug 55 is embedded in the plug placement hole 50 .

[0063] Metallic disk members 81 are prepared separately from the ceramic substrate 20 (FIG. 3D). Then, grooves and holes for the gas passages 60 and the refrigerant passages 32 are formed in the metallic disk members 81 by machining (FIG. 3E).

[0064] Next, the conductive connecting portion 70 is inserted into the through-hole 73 that becomes the gas distribution path 62 ( FIG. 3F ). In this case, it is preferable to position the connecting portion 70 so that the upper end 70 a of the connecting portion 70 protrudes above the upper surface 31 of the base plate 30 before it comes into contact with the first film 56 that covers the lower surface 55 a of the dielectric plug 55 (before the connecting portion 70 is compressed). This makes it easier to press the connecting portion 70 when bringing it into contact with the first film 56.

[0065] Next, the upper surface 31 of the base plate 30 is bonded to the lower surface of the ceramic substrate 20 using a thermosetting resin adhesive sheet ( FIG. 3G ). A specific method for bonding the upper surface 31 of the base plate 30 to the lower surface of the ceramic substrate 20 using a thermosetting resin adhesive sheet will be described below. First, a thermosetting resin adhesive sheet with adhesive layer penetrations at predetermined positions is bonded to the upper surface 31 of the base plate 30, and then the ceramic substrate 20 is placed on top. This laminate is heated and pressurized in an autoclave to harden the thermosetting resin adhesive sheet and complete the bonding. Subsequently, the semiconductor manufacturing equipment component 10 is completed by appropriately performing processes such as shaping the overall shape.

[0066] 10: Semiconductor manufacturing equipment member 20: Ceramic substrate 21: Upper surface 21a: Seal band 21b: Small protrusion 21c: Reference surface 22: Electrode 23: Lower surface 30: Base plate 31: Upper surface 31a: Inner peripheral edge 32: Coolant flow path 33: Lower surface 40: Resin adhesive layer 41: Lower surface 42: Upper surface 50: Plug placement hole 50a: Inner peripheral surface 55: Dielectric plug 55a: Lower surface 55b: Outer peripheral surface 55c: Gas passage 55d: Upper surface 56: First film 57: Second film 56a: Outer peripheral edge 60: Gas passage 62: Gas distribution path 62a: Bottom surface 63: Gas supply path 63a: Ring portion 63b : Gas inlet 64 : Adhesive layer penetration 64a : Inner periphery 64b : Portion with smallest opening diameter 70 : Connecting portion 70a : Upper end 70b : Lower end 73 : Through hole 81 : Disk member

Claims

1. A ceramic substrate having an upper surface for mounting a wafer and a lower surface opposite to the upper surface; a plug placement hole penetrating the ceramic substrate in the vertical direction; a dielectric plug embedded in the plug placement hole, the dielectric plug having a lower surface and a gas passage portion penetrating the dielectric plug; a first film covering at least a part of the lower surface of the dielectric plug and made of a material having a lower volume resistivity than the material constituting the dielectric plug; a conductive base plate adhesively bonded to the lower surface of the ceramic substrate via a resin adhesive layer; a gas passage for supplying gas to the gas passage portion of the dielectric plug through the base plate and the resin adhesive layer; and a conductive connecting portion provided in the gas passage and having an upper end electrically connected to the first film and a lower end electrically connected to the base plate. At least a part of the first film is in contact with the resin adhesive layer, or at least a part of the lower surface of the ceramic substrate is covered with a second film made of a material having a lower volume resistivity than the material constituting the ceramic substrate, and at least a part of the second film is in contact with the resin adhesive layer and in contact with the first film. A member for a semiconductor manufacturing apparatus.

2. The member for a semiconductor manufacturing apparatus according to claim 1, wherein at least a part of the first film is in contact with the resin adhesive layer.

3. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein at least a part of the lower surface of the ceramic substrate is covered with a second film made of a material having a lower volume resistivity than the material constituting the ceramic substrate, and at least a part of the second film is in contact with the resin adhesive layer and in contact with the first film.

4. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the connecting portion has an elastic member, and the elastic member is pressed and compressed by the first film on the lower surface of the dielectric plug.

5. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the connecting portion has an elastic member, and the elastic member is pressed and compressed by the second film on the lower surface of the ceramic substrate.

6. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein both the material constituting the dielectric plug and the material constituting the ceramic substrate contain one or more selected from aluminum oxide, aluminum nitride, quartz, and zirconia.

7. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the first film on the lower surface of the dielectric plug contains a metal, carbon, a conductive ceramic, or a composite material of two or more of these.

8. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the second film on the lower surface of the ceramic substrate contains a metal, carbon, a conductive ceramic, or a composite material of two or more of these.

9. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the dielectric plug is an inorganic dielectric plug having a dense outer peripheral surface, and the outer peripheral surface is embedded in the plug placement hole so as to directly fit with the inner peripheral surface of the plug placement hole.

10. The member for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the inner peripheral edge of the through portion of the resin adhesive layer partitioning the gas passage is configured such that the gas passage widens upward.

11. The member for a semiconductor manufacturing apparatus according to claim 9, wherein the inner peripheral surface of the plug placement hole that fits with the dense outer peripheral surface of the dielectric plug is dense.

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