Reaction precursor evaporator and atomic layer deposition system comprising same

Abstract

The present application relates to a reaction precursor evaporator and an atomic layer deposition system comprising same. The reaction precursor evaporator comprises: a top cover; an evaporator body connected to the top cover, the evaporator body and the top cover defining a space; a pipe located in the space and connected to the top cover, the pipe extending substantially in a first direction; and an ultrasonic oscillator in contact with the evaporator body. Such design can further enhance the growth per cycle of atomic layer deposition.

Description

Reaction precursor evaporator and atomic layer deposition system containing the same Technical Field

[0001] The present application relates to a semiconductor device, including the design and manufacture of its components. Background Art

[0002] Atomic layer deposition (ALD) is a thin film deposition technique that allows for the deposition of ultrathin films, several nanometers thick, in a precisely controlled manner. It is based on the sequential use of gas-phase chemical processes. Most ALD reactions use two chemical species, called precursors. These precursors react with the material surface in a sequential, self-limiting manner. Through repeated exposure to different precursors, a thin film is slowly deposited.

[0003] During atomic layer deposition, a film is grown on a substrate by exposing its surface to alternating gaseous species (often called precursors or reactants). Unlike chemical vapor deposition, the precursors are never present simultaneously in the reactor, but rather are inserted as a series of sequential, non-overlapping pulses. In each pulse, the precursor molecules react with the surface in a self-limiting manner, so that the reaction terminates once all available sites on the surface have been consumed.

[0004] Therefore, the maximum amount of material deposited on a surface after a single exposure of all precursors (the so-called ALD cycle) is determined by the nature of the precursor-surface interaction. By varying the number of cycles, material can be grown uniformly and with high precision on arbitrarily complex and large substrates.

[0005] ALD is a key process in the manufacture of semiconductor devices and is part of the toolkit for synthesizing nanomaterials. It is an active area of ​​research, with hundreds of different processes published in the scientific literature. ALD is a deposition method with great potential, allowing atomic-scale control of film thickness and composition.

[0006] Summary of the Invention

[0007] The following summarizes the basic features of this application so that some aspects of this application can be basically understood. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] When read in conjunction with the accompanying drawings, it is easy to understand various aspects of the present application from the following detailed description. It should be noted that the various features may not be drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for the sake of clarity of discussion.

[0009] FIG. 1 illustrates an ALD deposition system 100 according to some embodiments of the present application.

[0010] FIG2 shows a reaction precursor vaporizer 103 according to some comparative embodiments of the present application.

[0011] FIG. 3 a shows a reaction precursor vaporizer 103 a according to some embodiments of the present application.

[0012] FIG. 3 b shows a partial enlarged view of the dotted-line box area in FIG. 3 a .

[0013] FIG4 illustrates a reaction precursor vaporizer 103 b according to some embodiments of the present application.

[0014] FIG5 illustrates a reaction precursor vaporizer 103 c according to some embodiments of the present application.

[0015] FIG6 illustrates a reaction precursor vaporizer 103d according to some embodiments of the present application.

[0016] FIG7 illustrates a reaction precursor vaporizer 103 e according to some embodiments of the present application.

[0017] FIG8 a shows a reaction precursor vaporizer 103 f according to some embodiments of the present application.

[0018] FIG8 b shows a reaction precursor vaporizer 103 g according to some embodiments of the present application.

[0019] FIG8 c shows a reaction precursor vaporizer 103 h according to some embodiments of the present application.

[0020] FIG8 d shows a reaction precursor vaporizer 103 i according to some embodiments of the present application. DETAILED DESCRIPTION

[0021] For clarity and conciseness of the illustrations, the same reference numerals in different figures indicate the same components unless otherwise specified. In addition, descriptions and details of well-known steps and components may be omitted for simplicity of description. The use of the words "substantially" or "essentially" means that the values ​​of the components have parameters that are expected to be close to the stated values ​​or positions. However, as is well known in the art, there are always minor differences that prevent the values ​​or positions from being exactly as stated. It is recognized in the art that deviations of up to at least ten percent (10%) (and for some components including semiconductor doping concentrations, even up to twenty percent (20%)) are reasonable deviations from the ideal goal of being exactly as described. The terms "first," "second," "third," etc. in the claims and / or detailed description (as used in part of a component name) are used to distinguish similar components and do not necessarily describe a temporal, spatial, hierarchical, or any other order. It should be understood that the terms so used are interchangeable where appropriate and that the embodiments described herein may operate in other orders than those described or illustrated herein. Reference to "some embodiments" means that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present application. Thus, the phrase "in some embodiments" appearing in various places throughout this specification is not necessarily referring to the same embodiment, but in some cases may refer to the same embodiment. Furthermore, as will be apparent to one of ordinary skill in the art, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0022] The following disclosure provides many different embodiments or examples for implementing the different features of the subject matter provided. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In this application, descriptions in the following description of a first feature being formed on or above a second feature may include embodiments in which the first feature is formed in direct contact with the second feature, and may also include embodiments in which additional features may be formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, this application may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not, in itself, specify the relationship between the various embodiments and / or configurations discussed.

[0023] The following describes embodiments of the present application in detail. However, it should be understood that many applicable concepts provided by this application can be implemented in a variety of specific environments. The specific embodiments discussed are merely illustrative and do not limit the scope of this application.

[0024] Atomic layer deposition system

[0025] 1 illustrates an ALD deposition system 100 according to some embodiments of the present application. The ALD system 100 may generally perform an operation of depositing a thin film on a semiconductor substrate 112. The ALD deposition system 100 may include a process chamber 102 and a reactant delivery system 101.

[0026] The processing chamber 102 may include a distributor 106. The processing chamber 102 is fluidly connected to a reactant delivery system 101 to deliver reactants such as process gas 104, carrier gas 109, liquid precursor 111, or cleaning gas (not shown in FIG. 1) to the distributor 106.

[0027] The reactant delivery system 101 can include a mixing vessel 804 for mixing and / or regulating the reactants delivered to the distributor 106. One or more mixing vessel inlet valves 120 can control the input of the process gas 104 to the mixing vessel 804.

[0028] Some reactants can be stored in liquid form (such as liquid precursor 111) before being transported to the processing chamber 102. The reactant delivery system 101 may include a reaction precursor evaporator 103 for vaporizing the liquid precursor 111 expected to be provided to the mixing container 804. When the saturated reactant vapor generated from the reaction precursor evaporator 103 is not fully controlled at the appropriate position of the delivery pipeline (for example, when there is no helium for vaporizing / atomizing the liquid precursor 111), it will condense downstream of the delivery pipeline. Incompatible gases exposed to condensed reactants will produce small particles. These small particles may clog the pipeline, hinder valve operation, contaminate the substrate, etc. The delivery pipeline can be cleaned and / or emptied to remove residual reactants. The delivery pipeline downstream of the reaction precursor evaporator 103 can be heat treated. The mixing container 804 can be heat treated. The pipeline downstream of the reaction precursor evaporator 103 can have an increasing temperature distribution from about 100°C to about 150°C at the mixing container 804.

[0029] The distributor 106 can be connected to the mixing container 804 fluid. The distributor 106 can be connected to the reaction precursor vaporizer 103 fluid. The distributor 106 can be connected to the process liquid fluid. The distributor 106 can distribute the reactants to the substrate 112, and the flow rate of the reactants can be controlled by one or more valves (e.g., valves 120, 120A, 105) upstream of the distributor 106. The substrate 112 can be located below the distributor 106. The substrate 112 can be located on the substrate support 108. The distributor 106 can include ports of appropriate number and layout so that the reactants are distributed to the substrate 112.

[0030] Therefore, the ALD deposition system 100 of the present application may include a process chamber 102 and a reactive precursor vaporizer 103. The process chamber 102 may be fluidically connected to the reactive precursor vaporizer 103.

[0031] The processing chamber 102 may include a substrate support 108. A space 107 is defined between the dispenser 106 and the substrate support 108. The space 107 may be located below the dispenser 106. The space 107 may be located above the substrate support 108. The substrate support 108 may be raised or lowered to expose the substrate 112 to the space 107 and / or to change the size of the space 107.

[0032] The distributor 106 and substrate support 108 can be electrically connected to an RF power supply 114 and a matching network 116 to ignite a plasma. The energy of the plasma can be controlled by controlling one or more parameters of the process chamber 102 pressure, gas concentration, RF source power, RF source frequency, and plasma power pulse timing. The RF power supply 114 and matching network 116 can be operated at any suitable power to form a plasma having a desired composition of free radical species. Any suitable parameters can be modulated discretely or continuously to provide plasma energy for surface reactions. The plasma power can be intermittently pulsed to reduce ion bombardment of the substrate surface relative to a continuously energized plasma.

[0033] The processing chamber 102 may include a heater 110 to control the temperature of the substrate support 108 .

[0034] The interior of the process chamber 102 can be maintained in a vacuum state by valve 118. The pressure of the process chamber 102 can be controlled by operating a vacuum source, such as valve 118. Valve 118 can adjust the vacuum provided by a downstream vacuum pump (not shown in FIG. 1 ). The pressure of the process chamber 102 can be controlled by varying the flow rate of one or more gases introduced into the process chamber 102. One or more valve-operated vacuum sources, such as valve 118, can be used to remove reactants from the space 107 surrounding the substrate 112 during appropriate ALD operation stages.

[0035] Reaction precursor evaporator

[0036] In order to use the liquid precursor 111 as a reactant in the ALD process, the liquid precursor 111 may be vaporized in the reactive precursor evaporator 103 to form a reactant and then delivered to the dispenser 106. In the evaporator 103, a small amount of the liquid precursor 111 may flow onto a heated surface to cause vaporization of the liquid precursor 111. The vaporized precursor should not include any droplets and should have a uniform concentration and accurate dosage.

[0037] 2 shows a reaction precursor evaporator 103 according to some comparative embodiments of the present application. The reaction precursor evaporator 103 may include: a top cover 228 , an evaporator body 220 , and a conduit 240 .

[0038] The evaporator body 220 may be connected to a top cover 228 to seal the evaporator body 220 and the top cover 228. The evaporator body 220 may include sidewalls 221 and a bottom 224. The sidewalls 221 may surround the bottom 224. The evaporator body 220 and the top cover 228 may define a space 241. The top cover 228, the sidewalls 221, and the bottom 224 may define the space 241. A conduit 240 may be located in the space 241. The conduit 240 may be connected to the top cover 228. The conduit 240 may pass through the top cover 228. The evaporator body 220 may extend generally along the y-axis. The conduit 240 may extend generally along the y-axis.

[0039] The evaporator body 220 may define an opening 222 . The sidewall 221 may define the opening 222 .

[0040] In some preferred embodiments, the evaporator body 220 may include a partition 244. The partition 244 may be located in the space 241. The partition 244 may define a space 241' with the sidewalls 221 and the top cover 228. The partition 244 may define a space 241" with the sidewalls 221 and the bottom 224. The partition 244 may include a plate containing spaced holes. The partition 244 may include a porous medium. The partition 244 may provide a porous separation between the space 241' and the space 241'. The pore size of the partition 244 may be approximately 5 to 50 microns. The partition 244 may include stainless steel. The evaporator body 220 may include a bracket 246. The bracket 246 can be used to maintain the position of the partition 244 relative to the space 241".

[0041] The bracket 246 may include an annular plate 245 having holes 247 extending therethrough generally in the y-axis direction. The holes 247 may be evenly distributed around the annular plate 245. Fasteners 248 may be inserted into the holes 247 to secure the annular plate 245 to the base 224. The annular plate 245 may include a flange 249. The flange 249 may be adjacent to an upper portion of the annular plate 245. The flange 249 may extend generally in the x-axis direction. The flange 249 may extend generally radially inward of the annular plate 245. The flange 249 may hold the divider 244 in place above the space 241".

[0042] The liquid precursor 111 may be provided to the evaporator body 220. The carrier gas 109 may be provided to the evaporator body 220. The carrier gas 109 may be provided to the conduit 240. The conduit 240 includes an end 242. The end 242 may extend through the partition 244 and into the space 241". The carrier gas 109 may flow into the liquid precursor 111 located in the space 241". The liquid precursor 111 may pass through the partition 244 from the space 241".

[0043] The temperature of the precursor evaporator 103 can be controlled. The temperature of the evaporator body 220 can be controlled. For example, the bottom 224 can include a heater 230 to provide heat to the bottom 224. A thermocouple or temperature sensor 250 can be provided to monitor the temperature of the bottom 224. The heater 230 can be disposed on the bottom 224. The heater 230 can be disposed on a surface of the bottom 224 away from the space 241. The bottom 224 can include a heater 230.

[0044] The top cover 228 may include a liquid level sensor 70 to sense the liquid level of the liquid precursor 111 in the vaporizer body 220. Any suitable type of liquid level sensor 70 may be used. The top cover 228 may include a valve 272. The valve 272 may be centrally located relative to the top cover 228. The top cover 228 may include a connector 278. The carrier gas 109 may be supplied to the valve 272 via the connector 278. The top cover 228 may include a channel 279. The carrier gas 109 may flow through the channel 279 and enter the inlet of the valve 272. The channel 279 may preheat the carrier gas 109 as it enters the reactive precursor vaporizer 103.

[0045] The valve 272 may include an inlet in communication with the passage 279 and an outlet in communication with the evaporator body 220. The top cover 228 may include a connector 276. The connector 276 may be used to deliver the liquid precursor 111 to the evaporator body 220. The connector 276 may be used to remove the liquid precursor 111 from the evaporator body 220.

[0046] The connector 276 may be fluidically connected to a conduit 298. The conduit 298 may extend generally in the y-axis direction. In the y-axis direction, the length of the conduit 298 is shorter than that of the conduit 240. The conduit 298 may provide or remove the liquid precursor 111 into the evaporator body 220. The second conduit 298 may have an end connected to the connector 276. The liquid precursor 111 is provided into the evaporator body 220 through the conduit 298. The carrier gas 109 is provided into the space 241" via the conduit 240. Vaporization of the liquid precursor 111 occurs, and the vaporized liquid precursor 111 forms a reactant, which can then be provided to the distributor 106.

[0047] ALD deposition cycle

[0048] Thus, returning to FIG. 1 , a basic ALD cycle for deposition on substrate 112 may include:

[0049] (i) adsorbing a reactant (such as a vaporized liquid precursor 111) onto a substrate 112 to form an adsorption limiting layer,

[0050] (ii) removing the non-adsorbed reactant from the space 107 surrounding the adsorbed reactant,

[0051] (iii) reacting the adsorbed reactants to form a layer on the substrate 112, and

[0052] (iv) removing the desorbed membrane reactants and / or reaction byproducts from the space 107 surrounding the membrane layer formed on the substrate 112 .

[0053] The removal operations in steps (ii) and (iv) can be accomplished by cleaning, evacuating, or pumping down the space 107 surrounding the substrate 112 to a background pressure (or "base pressure"), etc. Steps (i) through (iv) of the basic ALD sequence do not necessarily involve two or more chemisorption reactants, depending on the desired deposition chemistry involved.

[0054] Due to the adsorption-limited nature of ALD, a single ALD cycle can deposit a single monolayer of material. The sequence of operations in a typical ALD cycle (e.g., steps (i) to (iv) above) typically needs to be repeated multiple times to form a conformal film of the desired thickness.

[0055] ALD processes can be used to deposit conformal silicon oxide films (SiOx). ALD processes can also be used to deposit conformal dielectric films of other chemistries. Dielectric films formed by ALD can include silicon carbide (SiC), silicon nitride (SiN), silicon carbonitride (SiCN), or combinations thereof. Dielectric films formed by ALD can include silicon-carbon oxide, silicon-carbon-oxynitride, and silicon-carbon-nitride.

[0056] The dielectric film formed by ALD may include a film containing a dopant. Various dopant-containing reactants can be used to form the dopant-containing film. For example, a boron-doped silicate glass (BSG) film, a phosphorus-doped silicate glass (PSG) film, a boron-phosphorus-doped silicate glass (BPSG) film, an arsenic (As)-doped silicate glass (ASG) film, and the like. The dopant-containing film may include B2O3, B2O, P2O5, P2O3, As2O3, As2O5, and the like. Dopant-containing films having dopants other than boron are feasible, for example, dopants including gallium, phosphorus, or arsenic, or other elements suitable for doping a semiconductor substrate, such as other Group III and Group V elements.

[0057] The ALD process can be performed at a variety of temperatures. Suitable substrate support temperatures may range from about 25°C to 450°C, or from about 50°C to 300°C, or from about 20°C to 400°C, or from about 200°C to 400°C, or from about 100°C to 350°C.

[0058] The ALD process can be performed at various pressures in the process chamber 102. Suitable pressures in the process chamber 102 can range from about 10 mTorr to 10 Torr, or from about 20 mTorr to 8 Torr, or from about 50 mTorr to 5 Torr, or from about 100 mTorr to 2 Torr.

[0059] If a plasma is used in step (iii), a variety of RF powers may be used to generate the plasma. Suitable RF powers may range from about 100 watts to 10 kilowatts, or from about 200 watts to 6 kilowatts, or from about 500 watts to 3 kilowatts, or from about 1 kilowatt to 2 kilowatts.

[0060] A variety of process gas 104 flow rates may be employed in step (I). Suitable flow rates may range from about 0.1 ml / min to 10 ml / min or between 0.1 ml / min and 10 ml / min, or about 0.5 ml / min to 5 ml / min or between 0.5 ml / min and 5 ml / min, or about 1 ml / min to 3 ml / min or between 1 ml / min and 3 ml / min.

[0061] A variety of carrier gas 109 flow rates can be used in various operations. The carrier gas 109 flow rate can range from about or between 1 liter / minute and 20 liters / minute, or from about or between 2 liters / minute and 10 liters / minute.

[0062] For the optional inert gas cleaning steps in steps (ii) and (iv), the inert gas flow rate employed may range from about or between 20 L / min and 100 L / min, or from about or between 40 L / min and 60 L / min.

[0063] Again, the pumping to background pressure step refers to pumping the process chamber 102 to background pressure by directly exposing the process chamber 102 to one or more vacuum pumps. Background pressure can typically be only a few millitorr (e.g., between about 1 and 20 millitorr). The pumping to background pressure step may or may not be accompanied by an inert purge, such that when one or more valves open a conductive path to the vacuum pump, inert gas may or may not flow.

[0064] Multiple ALD cycles may be repeated to build up a stack of conformal layers. Each layer may have substantially the same composition. Sequential ALD-deposited layers may have different compositions, or in certain such embodiments, the composition may alternate layer by layer or there may be a repeating sequence of layers having different compositions.

[0065] As can be seen from the above, the output of the reaction precursor vaporizer 103 is fed to the process chamber 102. The output of the reaction precursor vaporizer 103 is fed to fill the pipeline space connected to the process chamber 102. The pressure gradually increases to a predetermined value, and then the reactants are transported from the reaction precursor vaporizer 103 to the process chamber 102. Then, in the reaction precursor vaporizer 103, the pressure gradually decreases.

[0066] Due to the limitations of the ALD process principle, the film growth rate is slow. Therefore, under the premise of ensuring the performance of the film, the growth per cycle (GPC) and the ALD deposition cycle time are the two most critical parameters for measuring the performance of the ALD process. It has been found that the growth per cycle is affected by the output rate of the reactant flow from the reaction precursor evaporator 103 and / or the cleaning efficiency of the processing chamber 102. However, the supply amount and supply time of the reactant from the liquid precursor 111 in the reaction precursor evaporator 103 are controlled by the temperature of the reaction precursor evaporator 103. After the reaction precursor evaporator 103 outputs the reactant, it takes a long time to reach the desired vapor pressure of the liquid precursor 111 for the next output, resulting in the need to further increase the growth per cycle.

[0067] FIG3a shows a reaction precursor evaporator 103a according to some embodiments of the present application. FIG3b shows a partial enlarged view of the dotted-line box area in FIG3a. The reaction precursor evaporator 103a is substantially the same as the reaction precursor evaporator 103 shown in FIG2, with the following differences:

[0068] The precursor evaporator 103a may include an ultrasonic oscillator 30. The ultrasonic oscillator 30 may be in contact with the evaporator body 220. The ultrasonic oscillator 30 may be in contact with the bottom 224. The ultrasonic oscillator 30 may not be in contact with the sidewall 221. The ultrasonic oscillator 30 may be disposed on a surface of the bottom 224 away from the space 241. The bottom 224 may include the ultrasonic oscillator 30.

[0069] The base 224 may include a protrusion 224' extending generally along the y-axis. The protrusion 224' may clamp the ultrasonic oscillator 30. The protrusion 224' may surround the ultrasonic oscillator 30. The protrusion 224' may contact the ultrasonic oscillator 30. The protrusion 224' may be connected to the base 224 by any means, such as, but not limited to, integral molding, welding, or fastening.

[0070] In the general y-axis direction, the space 241 may be separated from the ultrasonic oscillator 30 via the evaporator body 220. The space 241′ may be separated from the ultrasonic oscillator 30 via the evaporator body 220. The space 241″ may be separated from the ultrasonic oscillator 30 via the evaporator body 220. The space 241 may be separated from the ultrasonic oscillator 30 via the bottom 224. The space 241′ may be separated from the ultrasonic oscillator 30 via the bottom 224. The space 241″ may be separated from the ultrasonic oscillator 30 via the bottom 224.

[0071] The ultrasonic oscillator 30 may include an oscillator 302. The ultrasonic oscillator 30 may be configured so that the oscillator 302 moves substantially in the y-axis direction. The ultrasonic energy generated by the oscillator 302 during oscillation may reach the space 241 via the evaporator body 220. The ultrasonic energy may propagate substantially in the y-axis direction so as to efficiently pass through the bottom 224 of the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241' via the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 may reach the space 241" via the evaporator body 220.

[0072] After installing the ultrasonic oscillator 30 in the precursor evaporator 103, to reduce or suppress bubbles generated when ultrasonic waves are transmitted to the surface of the evaporator body 220 facing the space 241, the ultrasonic oscillator 30 can be placed on the bottom 224 or on a flat area of ​​the evaporator body 220. This placement facilitates the installation of the oscillator 302 so that it vibrates generally along the y-axis, thereby suppressing ultrasonic power transmission losses.

[0073] To reduce or suppress bubbles generated when ultrasonic waves are transmitted to the surface of the evaporator body 220 facing the space 241, the surface of the evaporator body 220 facing the space 241 may not include blades. The surface of the evaporator body 220 facing the space 241 may not be textured. The surface of the evaporator body 220 facing the space 241 may be smooth. The surface of the evaporator body 220 facing the space 241 may be polished. The surface of the sidewall 221 facing the space 241 may not include blades. The surface of the sidewall 221 facing the space 241 may not be textured. The surface of the sidewall 221 facing the space 241 may be smooth. The surface of the sidewall 221 facing the space 241 may be polished. The surface of the bottom 224 facing the space 241 may not include blades. The surface of the bottom 224 facing the space 241 may not be textured. The surface of the bottom 224 facing the space 241 may be smooth. The surface of the bottom 224 facing the space 241 may be polished.

[0074] The ultrasonic oscillator 30 can be electrically connected to a power supply. The oscillator 302 can have an oscillation frequency covering a plurality of frequency bands, with a lower limit of 20 kHz and an upper limit of 100 kHz. Examples of the oscillation frequency of the oscillator 302 include, but are not limited to, 20, 30, 40, 50, 60, 70, 80, 90, or 100 kHz. Suitable oscillation frequency bands can include any combination of these values.

[0075] The heater 230 may be adjacent to the ultrasonic oscillator 30. The heater 230 may be adjacent to the protrusion 224'. The heater 230 may surround the ultrasonic oscillator 30. The heater 230 may surround the protrusion 224'. The projection of the heater 230 along the x-axis may overlap with the protrusion 224'. The projection of the heater 230 along the x-axis may overlap with the ultrasonic oscillator 30. The projection of the protrusion 224' along the x-axis may overlap with the ultrasonic oscillator 30. Therefore, the ultrasonic oscillator 30 suitable for the present disclosure can withstand high temperatures. The ultrasonic oscillator 30 can be selected based on different liquid precursors 111 and their evaporation temperatures.

[0076] It has been discovered that by controlling the temperature of the evaporator body 220 and the oscillation frequency of the oscillator 302, the evaporation rate of the liquid precursor 111 can be adjusted, thereby improving the reactant flow output rate of the reaction precursor evaporator 103a. Ultrasonic frequency bands suitable for the present disclosure include low frequency (20KHz to 50KHz), high frequency (>50KHz to 80KHz), and ultra-high frequency (>80KHz to 100KHz). In the low frequency band, due to the low cavitation threshold, bubbles are not easily generated, but the energy state efficiency of activating the liquid precursor 111 is low, resulting in a low partial pressure of the liquid precursor 111 in the carrier gas 109. Conversely, in the high frequency band, due to the high cavitation threshold, bubbles are easily generated, but the energy state efficiency of activating the liquid precursor 111 is high, resulting in a high partial pressure of the liquid precursor 111 in the carrier gas 109. In order to suppress the generation of bubbles in the liquid precursor 111 caused by the ultrasonic cavitation effect, it is necessary to control the cavitation threshold. It has been found that the cavitation threshold of the liquid precursor 111 is related to factors such as the oscillation frequency of the oscillator 302 and the temperature of the liquid precursor 111. Therefore, by selecting an appropriate temperature of the evaporator body 220 and the oscillation frequency of the oscillator 302 in accordance with different evaporation temperatures of the liquid precursor 111, it is possible to improve the reactant flow output rate of the precursor evaporator 103a while reducing or suppressing bubble generation according to design rules (as shown in Table 1).

[0077] Table 1

[0078] The projection of the conduit 240 along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the conduit 298 along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the conduit 240 along the y-axis direction may overlap with the protrusion 224'. The projection of the conduit 298 along the y-axis direction may overlap with the protrusion 224'. The projection of the conduit 240 along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the conduit 298 along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the conduit 240 along the y-axis direction may not overlap with the protrusion 224'. The projection of the conduit 298 along the y-axis direction may not overlap with the protrusion 224'.

[0079] Precursor evaporator 103a retains the temperature control function of precursor evaporator 103 and is equipped with an ultrasonic oscillator 30. The inventors have unexpectedly discovered that the introduction of ultrasonic waves changes the tension state at the gas-liquid interface of liquid precursor 111 and / or increases the energy state of the compound molecules in liquid precursor 111, thereby shortening the supply time of reactants from liquid precursor 111 and further improving the growth rate per cycle of ALD deposition system 100.

[0080] Figure 4 shows a reaction precursor evaporator 103b according to some embodiments of the present application. The reaction precursor evaporator 103b is substantially the same as the reaction precursor evaporator 103a shown in Figures 3a and 3b, with the following differences:

[0081] Compared to the reaction precursor evaporator 103a, the reaction precursor evaporator 103b may further include an ultrasonic coupling layer 50. The evaporator body 220 and the ultrasonic oscillator 30 may be separated by the ultrasonic coupling layer 50 substantially along the y-axis. The base 224 and the ultrasonic oscillator 30 may be separated by the ultrasonic coupling layer 50 substantially along the y-axis. The ultrasonic coupling layer 50 may be in contact with the evaporator body 220. The ultrasonic coupling layer 50 may be in contact with the base 224. The ultrasonic coupling layer 50 may be in contact with the protrusion 224′. The ultrasonic coupling layer 50 may be in contact with the ultrasonic oscillator 30. The protrusion 224′ may surround the ultrasonic coupling layer 50.

[0082] The projection of the conduit 240 along the y-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the conduit 298 along the y-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the conduit 240 along the y-axis direction may not overlap with the ultrasonic coupling layer 50. The projection of the conduit 298 along the y-axis direction may not overlap with the ultrasonic coupling layer 50. The projection of the ultrasonic coupling layer 50 along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the heater 230 along the x-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the heater 230 along the x-axis direction may not overlap with the ultrasonic coupling layer 50.

[0083] Herein, an "ultrasonic coupling layer" may be a material used to transmit sound waves within an ultrasonic device, such as, but not limited to, ultrasonic transducer adhesive. Therefore, the ultrasonic oscillator 30 can be directly connected to the evaporator body 220. The ultrasonic oscillator 30 can be directly connected to the base 224. The ultrasonic coupling layer 50 can be used to reduce the void volume between the ultrasonic oscillator 30 and the evaporator body 220. The ultrasonic coupling layer 50 can be used to reduce the void volume between the ultrasonic oscillator 30 and the base 224.

[0084] FIG5 shows a reaction precursor evaporator 103c according to some embodiments of the present application. The reaction precursor evaporator 103c is substantially the same as the reaction precursor evaporator 103b shown in FIG4 , with the following differences:

[0085] Compared to the reaction precursor evaporator 103b, the evaporator body 220 and the ultrasonic oscillator 30 may be separated substantially along the x-axis direction by the ultrasonic coupling layer 50. Also, the bottom 224 and the ultrasonic oscillator 30 may be separated substantially along the x-axis direction by the ultrasonic coupling layer 50. Also, the protrusion 224′ and the ultrasonic oscillator 30 may be separated substantially along the x-axis direction by the ultrasonic coupling layer 50. The protrusion 224′ may surround the ultrasonic coupling layer 50.

[0086] The projection of the ultrasonic coupling layer 50 along the x-axis may overlap with the ultrasonic oscillator 30. The projection of the ultrasonic coupling layer 50 along the x-axis may overlap with the protrusion 224'. A surface 50m of the ultrasonic coupling layer 50 may be coplanar with a surface 224'm of the protrusion 224'.

[0087] FIG6 illustrates a reaction precursor evaporator 103d according to some embodiments of the present application. Reaction precursor evaporator 103d is obtained by replacing bottom portion 224 of reaction precursor evaporator 103a shown in FIG3a and FIG3b with bottom portion 224d. Bottom portion 224d is substantially identical to bottom portion 224. Bottom portion 224d includes a protrusion 224d'. The configuration relationship between bottom portion 224d and protrusion 224d' is substantially identical to the configuration relationship between bottom portion 224 and protrusion 224'. Specifically, reaction precursor evaporator 103d differs from reaction precursor evaporator 103a in the following ways:

[0088] The bottom portion 224d may be configured to expose the ultrasonic oscillator 30 in the opening 222. The bottom portion 224d may be configured to expose the ultrasonic oscillator 30 in the space 241. The bottom portion 224d may be configured to expose the ultrasonic oscillator 30 in the space 241". The ultrasonic oscillator 30 may be in contact with the space 241. The ultrasonic oscillator 30 may be in contact with the space 241". A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224dt of the bottom portion 224d. For example, the bottom portion 224d may include an opening to expose the ultrasonic oscillator 30.

[0089] Therefore, the ultrasonic oscillator 30 can contact the liquid precursor 111. According to the ultrasonic homogeneous conduction mechanism, the ultrasonic energy generated by the oscillator 302 when it oscillates can reach the space 241 through the evaporator body 220. The ultrasonic energy can generally propagate along the y-axis, and the ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' through the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241" through the evaporator body 220.

[0090] FIG7 shows a reaction precursor evaporator 103e according to some embodiments of the present application. The reaction precursor evaporator 103e is substantially the same as the reaction precursor evaporator 103d shown in FIG6 , with the following differences:

[0091] Compared to the reaction precursor evaporator 103d, the reaction precursor evaporator 103e may further include an ultrasonic coupling layer 50. The evaporator body 220 and the ultrasonic oscillator 30 may be separated by the ultrasonic coupling layer 50 generally along the x-axis. The bottom 224d and the ultrasonic oscillator 30 may be separated by the ultrasonic coupling layer 50 generally along the x-axis. The protrusion 224d′ and the ultrasonic oscillator 30 may be separated by the ultrasonic coupling layer 50 generally along the x-axis. The space 241 and the ultrasonic coupling layer 50 may be separated by the evaporator body 220 generally along the y-axis. The space 241 and the ultrasonic coupling layer 50 may be separated by the bottom 224d generally along the y-axis. The space 241″ and the ultrasonic coupling layer 50 may be separated by the evaporator body 220 generally along the y-axis. The space 241″ and the ultrasonic coupling layer 50 may be separated by the bottom 224d generally along the y-axis.

[0092] The ultrasonic coupling layer 50 may be in contact with the evaporator body 220. The ultrasonic coupling layer 50 may be in contact with the bottom portion 224d. The ultrasonic coupling layer 50 may be in contact with the protrusion 224d'. The ultrasonic coupling layer 50 may be in contact with the ultrasonic oscillator 30. The ultrasonic coupling layer 50 may surround the ultrasonic oscillator 30. The protrusion 224d' may surround the ultrasonic coupling layer 50.

[0093] The projection of the ultrasonic coupling layer 50 along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the protrusion 224d' along the x-axis direction may overlap with the ultrasonic coupling layer 50. The projection of the heater 230 along the x-axis direction may overlap with the ultrasonic coupling layer 50.

[0094] A surface 50m of the ultrasonic coupling layer 50 may be coplanar with a surface 224'm of the protrusion 224'. In the y-axis direction, a surface 50t of the ultrasonic coupling layer 50 may define a height h with a surface 30t of the ultrasonic oscillator 30, where h>0.

[0095] The bottom 224d may include a protrusion 224d" extending generally along the x-axis direction. The protrusion 224d" may clamp the ultrasonic oscillator 30. The protrusion 224d" may surround the ultrasonic oscillator 30. In the y-axis direction, the protrusion 224d" may cover the ultrasonic coupling layer 50. The protrusion 224d" may be in contact with the ultrasonic oscillator 30. The protrusion 224d" may be in contact with the ultrasonic coupling layer 50. The projection of the protrusion 224d" along the x-axis direction may overlap with the ultrasonic coupling layer 50. The protrusion 224d" may be connected to the bottom 224 in any manner, such as but not limited to: integral molding, welding, or locking.

[0096] FIG8a illustrates a reaction precursor evaporator 103f according to some embodiments of the present application. Reaction precursor evaporator 103f is obtained by replacing the sidewall 221 of reaction precursor evaporator 103a shown in FIG3a and FIG3b with a main body 221f and replacing the bottom 224 with a bottom 224f. Sidewall 221f is substantially identical to sidewall 221. Bottom 224f is substantially identical to bottom 224. Specifically, reaction precursor evaporator 103f differs from reaction precursor evaporator 103a in the following ways:

[0097] Sidewall 221f may include layer 221a, layer 221b, and layer 221c. In the x-axis direction, layer 221a may be adjacent to space 241. Layer 221a may be adjacent to space 241'. Layer 221a may be adjacent to space 241". Layer 221a may contact space 241. Layer 221a may contact space 241'. Layer 221a may contact space 241". Layer 221b may be away from space 241. Layer 221b may be away from space 241'. Layer 221b may be away from space 241". In the x-axis direction, layer 221c may be located between layer 221a and layer 221b.

[0098] Bottom portion 224f includes layer 224a, layer 224b, and layer 224c. In the y-axis direction, layer 224a may be adjacent to opening 222. Layer 224a may be adjacent to space 241. Layer 224a may be adjacent to space 241'. Layer 224a may be adjacent to space 241". Layer 224a may contact space 241. Layer 224a may contact space 241". Layer 224b may be away from opening 222. Layer 224b may be away from space 241. Layer 224b may be away from space 241'. Layer 224b may be away from space 241". Layer 224b may be adjacent to heater 230. In the y-axis direction, layer 224c may be located between layer 224a and layer 224b.

[0099] Layer 221a may be connected to layer 221c. Layer 221c may be connected to layer 221b. Layer 224a may be connected to layer 224c. Layer 224c may be connected to layer 224b. Layer 221a may be connected to layer 224a. Layer 221b may be connected to layer 224b. Layer 221c may be connected to layer 224c.

[0100] The bottom portion 224f may include a protrusion 224f'. The configuration relationship between the protrusion 224f' and the bottom portion 224f is substantially the same as the configuration relationship between the protrusion 224' and the bottom portion 224. The protrusion 224f' may be connected to the layer 224b. The protrusion 224f' may contact the layer 224b. The protrusion 224f' may extend from the layer 224b along the y-axis direction.

[0101] The layer 224a may cover the ultrasonic oscillator 30. The layer 224b may cover the ultrasonic oscillator 30. The layer 224b may be in contact with the ultrasonic oscillator 30. The layer 224c may cover the ultrasonic oscillator 30. The projection of the layer 224a along the y-axis direction may overlap with the protrusion 224f'. The projection of the layer 224b along the y-axis direction may overlap with the protrusion 224f'. The projection of the layer 224c along the y-axis direction may overlap with the protrusion 224f'. The projection of the layer 224a along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the y-axis direction may overlap with the ultrasonic oscillator 30.

[0102] In the y-axis direction, the ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224a. The ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224b. The ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224c. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224a. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224b. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224c.

[0103] Layer 221c may have a higher thermal conductivity than layer 221a. Layer 221c may have a higher thermal conductivity than layer 221b. Layer 224c may have a higher thermal conductivity than layer 224a. Layer 224c may have a higher thermal conductivity than layer 224b. The materials of layer 221a, layer 221b, layer 224a, and layer 224b are, for example, but not limited to, steel. The materials of layer 221c and layer 224c are, for example, but not limited to, aluminum. The inventors have unexpectedly discovered that using layer 221c or layer 224c with higher thermal conductivity can improve the temperature field uniformity inside the reaction precursor evaporator 103f (such as space 241, 241', 241") without hindering the transmission of ultrasonic energy from the ultrasonic oscillator 30.

[0104] Figure 8b shows a reaction precursor evaporator 103g according to some embodiments of the present application. The reaction precursor evaporator 103g is substantially the same as the reaction precursor evaporator 103f shown in Figure 8a, with the following differences:

[0105] The bottom portion 224f may be configured to expose the ultrasonic oscillator 30 in the opening 222. The layer 224a may be configured to expose the ultrasonic oscillator 30 in the opening 222. The layer 224b may be configured to expose the ultrasonic oscillator 30 in the opening 222. The layer 224c may be configured to expose the ultrasonic oscillator 30 in the opening 222. The bottom portion 224f may be configured to expose the ultrasonic oscillator 30 in the space 241. The layer 224a may be configured to expose the ultrasonic oscillator 30 in the space 241. The layer 224b may be configured to expose the ultrasonic oscillator 30 in the space 241. The layer 224c may be configured to expose the ultrasonic oscillator 30 in the space 241. The bottom portion 224f may be configured to expose the ultrasonic oscillator 30 in the space 241". The layer 224a may be configured to expose the ultrasonic oscillator 30 in the space 241". The layer 224b may be configured to expose the space 241″ of the ultrasonic oscillator 30. The layer 224c may be configured to expose the space 241″ of the ultrasonic oscillator 30. The ultrasonic oscillator 30 may be in contact with the space 241. The ultrasonic oscillator 30 may be in contact with the space 241″. The ultrasonic oscillator 30 may be in contact with the layer 224a. The ultrasonic oscillator 30 may be in contact with the layer 224b. The ultrasonic oscillator 30 may be in contact with the layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224at of the layer 224a. For example, the bottom 224f may include an opening to expose the ultrasonic oscillator 30. The layer 224a may include an opening to expose the ultrasonic oscillator 30. The layer 224b may include an opening to expose the ultrasonic oscillator 30. The layer 224c may include an opening to expose the ultrasonic oscillator 30.

[0106] The projection of the layer 224a along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224a along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the y-axis direction may not overlap with the ultrasonic oscillator 30.

[0107] Therefore, the ultrasonic oscillator 30 can contact the liquid precursor 111. According to the ultrasonic homogeneous conduction mechanism, the ultrasonic energy generated by the oscillator 302 when it oscillates can reach the space 241 through the evaporator body 220. The ultrasonic energy can generally propagate along the y-axis, and the ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' through the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241" through the evaporator body 220.

[0108] Figure 8c shows a reaction precursor evaporator 103h according to some embodiments of the present application. The reaction precursor evaporator 103h is substantially the same as the reaction precursor evaporator 103f shown in Figure 8a, with the following differences:

[0109] Layer 224b may be configured to expose the ultrasonic oscillator 30 in layer 224a. Layer 224c may be configured to expose the ultrasonic oscillator 30 in layer 224a. The ultrasonic oscillator 30 may be in contact with layer 224a. The ultrasonic oscillator 30 may be in contact with layer 224b. The ultrasonic oscillator 30 may be in contact with layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224bt of layer 224b. For example, layer 224b may include an opening to expose the ultrasonic oscillator 30. Layer 224c may include an opening to expose the ultrasonic oscillator 30.

[0110] In the y-axis direction, the ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224a. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224a.

[0111] The projection of the layer 224a along the x-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224a along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the y-axis direction may not overlap with the ultrasonic oscillator 30.

[0112] FIG8 d shows a reaction precursor evaporator 103i according to some embodiments of the present application. The reaction precursor evaporator 103i is substantially the same as the reaction precursor evaporator 103f shown in FIG8a , with the following differences:

[0113] Layer 224b may be configured to expose the ultrasonic oscillator 30 in layer 224c. The ultrasonic oscillator 30 may be in contact with layer 224b. The ultrasonic oscillator 30 may be in contact with layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224ct of layer 224c. For example, layer 224b may include an opening to expose the ultrasonic oscillator 30.

[0114] In the y-axis direction, the ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224a. The ultrasonic oscillator 30 may be separated from the opening 22 by the layer 224c. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224a. The ultrasonic oscillator 30 may be separated from the space 241 by the layer 224c.

[0115] The projection of the layer 224a along the x-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the x-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the x-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224a along the y-axis direction may overlap with the ultrasonic oscillator 30. The projection of the layer 224b along the y-axis direction may not overlap with the ultrasonic oscillator 30. The projection of the layer 224c along the y-axis direction may overlap with the ultrasonic oscillator 30.

[0116] Unexpectedly, it has been discovered that the addition of ultrasonic oscillators 30 to the precursor evaporators 103a-i not only effectively improves the per-cycle growth rate of the ALD deposition system 100, but also enables efficient evaporation of the liquid precursor 111, thereby improving evaporation efficiency and uniformity. By incorporating ultrasonic waves into the precursor evaporators 103a-i, building on the temperature control function of the precursor evaporator 103, the evaporation rate of the liquid precursor 111 can be effectively increased. This increase not only shortens the time required to provide reactants from the liquid precursor 111, but also reduces the overall ALD deposition cycle time, thereby increasing the throughput of the ALD deposition system 100.

[0117] As used herein, spatially relative terms such as "below," "beneath," "lower," "above," "upper," "lower," "left," "right," etc. may be used herein for ease of description to describe the relationship of a component or feature to another component or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0118] It should be noted that the values ​​of width, distance, etc. described in this application are only exemplary and the application is not limited thereto. In some embodiments, these values ​​may be adjusted according to the actual application of the invention without departing from the spirit of the invention of this application.

[0119] As used herein, the terms "about," "approximately," "substantially," "roughly," and "approximately" are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to situations in which the event or circumstance clearly occurs as well as situations in which the event or circumstance is very close to occurring. As used herein with respect to a given value or range, the terms "about" or "similar" generally mean within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. Ranges can be expressed herein as from an endpoint to another endpoint or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" can refer to two surfaces that are located along the same plane within a few microns (μm), for example, within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along the same plane. When referring to "substantially" the same value or feature, the term can refer to a value that is within ±10%, ±5%, ±1%, or ±0.5% of the average of the stated values.

[0120] The foregoing summarizes several embodiments and features of the present application in detail. The embodiments described in this application can be easily used as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of the present application and various variations, substitutions, and modifications may be made without departing from the spirit and scope of the present application.

[0121] Although the subject matter of this specification has been described through specific preferred embodiments and exemplary embodiments, the foregoing drawings and description of this specification merely depict typical non-limiting examples of the embodiments of the subject matter and are therefore not to be considered as limiting its scope, as many alternatives and modifications will be apparent to those skilled in the art.

[0122] As reflected in the claims below, aspects of the present application may have fewer than all of the features of a single embodiment disclosed above. Therefore, the claims expressed below are hereby expressly incorporated into the detailed description, with each claim standing on its own as a separate embodiment of the present application. Furthermore, although some embodiments described herein include some features included in other embodiments without including other features therein, those skilled in the art will understand that combinations of features from different embodiments are intended to fall within the scope of this application and are intended to form different embodiments.

Claims

1. A reaction precursor evaporator, comprising: A top cover; An evaporator body, which is connected to the top cover, and the evaporator body and the top cover define a space; A conduit, which is located in the space and connected to the top cover, and the conduit extends generally along a first direction; and An ultrasonic oscillator, which is in contact with the evaporator body.

2. The reaction precursor evaporator according to claim 1, wherein the ultrasonic oscillator is in contact with the space.

3. The reaction precursor evaporator according to claim 1, wherein in a direction generally along the first direction, the space and the ultrasonic oscillator are separated by the evaporator body.

4. The reaction precursor evaporator according to any one of claims 1 to 3, wherein the ultrasonic oscillator includes an oscillator that generates movement generally in the direction of the first direction.

5. The reaction precursor evaporator according to any one of claims 1 to 3, further comprising an ultrasonic coupling layer, wherein in a direction generally along the first direction, the evaporator body and the ultrasonic oscillator are separated by the ultrasonic coupling layer.

6. The reaction precursor evaporator according to any one of claims 1 to 3, further comprising an ultrasonic coupling layer, wherein in a direction generally perpendicular to the first direction, the evaporator body and the ultrasonic oscillator are separated by the ultrasonic coupling layer.

7. The reaction precursor evaporator according to any one of claims 1 to 3, wherein the projection of the conduit along the first direction overlaps with the ultrasonic oscillator.

8. An atomic layer deposition system, comprising: A processing chamber; And The reaction precursor evaporator according to any one of claims 1 to 7, Wherein the processing chamber is fluidly connected to the reaction precursor evaporator.

9. The atomic layer deposition system according to claim 8, further comprising a carrier gas source, and the carrier gas source is fluidly connected to the conduit.

10. The atomic layer deposition system according to claim 8 or 9, wherein the processing chamber includes a reactant distributor, and the reactant distributor is fluidly connected to the reaction precursor evaporator.

11. A reaction precursor evaporator, comprising: An evaporator body, the evaporator body includes a side wall and a bottom, wherein the evaporator body extends generally along a first direction and defines an opening; A heater, which is disposed at the bottom of the evaporator body; and An ultrasonic oscillator, which is disposed at the bottom of the evaporator body.

12. The reaction precursor evaporator according to claim 11, wherein the bottom is configured to expose the ultrasonic oscillator to the opening.

13. The reaction precursor evaporator according to claim 11, wherein in a direction generally along the first direction, the opening and the ultrasonic oscillator are separated by the bottom.

14. The reaction precursor evaporator according to any one of claims 11 to 13, wherein the bottom includes a protrusion extending generally along the first direction.

15. The reaction precursor evaporator according to any one of claims 11 to 13, wherein the bottom includes: A first layer, which is adjacent to the opening; A second layer, which is remote from the opening; and A third layer, which is located between the first layer and the second layer.

16. The pre-reaction precursor evaporator according to claim 15, wherein the first layer is configured to expose the ultrasonic oscillator to the opening.

17. The pre-reaction precursor evaporator according to claim 15, wherein the third layer is configured to expose the ultrasonic oscillator to the first layer.

18. The pre-reaction precursor evaporator according to claim 17, wherein the third layer is in contact with the ultrasonic oscillator.

19. The pre-reaction precursor evaporator according to claim 15, wherein the second layer is configured to expose the ultrasonic oscillator to the third layer.

20. The pre-reaction precursor evaporator according to claim 19, wherein the ultrasonic oscillator includes an oscillator that generates movement generally in the direction of the first direction.

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