Slurry composition for chemical-mechanical polishing

Abstract

The present invention relates to a slurry composition for chemical-mechanical polishing, wherein the polishing rate for a low dielectric film is less than the polishing rate for a silicon nitride film.

Description

Slurry composition for chemical-mechanical polishing

[0001] The present invention relates to a slurry composition for chemical-mechanical polishing.

[0002]

[0003] As semiconductor devices become more diverse and highly integrated, finer pattern formation techniques are being used, and as a result, the surface structure of semiconductor devices becomes more complex, and the interlayer flatness in each process is a very important factor in improving the precision of photolithography. In the manufacture of semiconductor devices, the chemical mechanical polishing (CMP) process is used as this planarization technology. For example, it is widely used as a process for removing an excessive amount of insulating film formed for interlayer insulation, a process for planarizing an insulating film for shallow trench isolation (STI) that provides insulation between chips, and a process for forming metal conductive films such as wiring, contact plugs, and via contacts.

[0004] In the CMP process, the polishing rate, the flatness of the polished surface, and the degree of scratches are important, and are determined by CMP process conditions, the type of slurry, and the type of polishing pad. In particular, it is necessary to prepare a CMP slurry composition suitable for the type of wafer to be polished. In this case, there are cases where selective polishing characteristics are required, such as a high polishing rate for one type of film and a low polishing rate for another type of film.

[0005] Accordingly, there is a need for technological development for a CMP slurry composition capable of controlling the polishing speed depending on the polishing target.

[0006]

[0007] The present invention provides a chemical-mechanical polishing slurry composition having a high polishing rate for a silicon nitride film and a low polishing rate when exposed to a low-k dielectric film, thereby improving a protective function and suppressing the occurrence of defects after a wafer polishing process.

[0008] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the description below.

[0009]

[0010] One embodiment of the present invention provides a chemical-mechanical polishing slurry composition comprising: an abrasive having a positively charged surface; and a first polishing selectivity control agent; wherein the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film.

[0011] According to one embodiment of the present invention, the zeta potential (ZP) of the abrasive may be 3 mV or more and 60 mV or less.

[0012] According to one embodiment of the present invention, the average size of the abrasive may be 30 nm or more and less than 80 nm.

[0013] According to one embodiment of the present invention, the abrasive may include at least one of silica, cerium oxide, and cerium hydroxide.

[0014] According to one embodiment of the present invention, the content of the abrasive may be 0.1 part by weight or more and 1 part by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition.

[0015] According to one embodiment of the present invention, the first polishing selectivity adjusting agent may include at least one of a zwitterionic organic acid and a zwitterionic amino acid.

[0016] According to one embodiment of the present invention, the first polishing selectivity adjusting agent may include at least one of picolinic acid, aspartic acid, and glutamic acid.

[0017] According to one embodiment of the present invention, the content of the first polishing selectivity control agent may be 0.005 parts by weight or more and 0.05 parts by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition.

[0018] According to one embodiment of the present invention, the weight ratio of the first polishing selectivity regulator and the polishing agent may be 1:10 to 1:100.

[0019] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include a second polishing selectivity adjusting agent including a hydroxyl group-containing compound.

[0020] According to one embodiment of the present invention, the hydroxyl group-containing compound may include at least one of a polysaccharide compound and a glycol compound.

[0021] According to one embodiment of the present invention, the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator may be 1:1 to 1:3.

[0022] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a pH of 9 or less.

[0023] According to one embodiment of the present invention, the dielectric constant of the low-k dielectric film may be 4 or less.

[0024] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a ratio of the polishing speed of a silicon nitride film to the polishing speed of a low-k dielectric film of 1.4 or more and 2.3 or less.

[0025] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a polishing speed for a silicon nitride film of 400 Å / min or more and 600 Å / min or less.

[0026] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a polishing speed for a low-k dielectric film of 150 Å / min or more and 300 Å / min or less.

[0027] According to one embodiment of the present invention, the surface of the abrasive contains silicon, and in the FT-IR spectrum, it has a wavelength of 850 to 950 cm -1 Peaks appearing at 1,000 to 1,050 cm -1 may have peaks appearing in .

[0028] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include a pH regulator including at least one of a basicity regulator and an acidity regulator.

[0029] According to one embodiment of the present invention, the pKa value of the alkalinity regulator may be 11 or less.

[0030] According to one embodiment of the present invention, the acidity regulator may include at least one of acetic acid, nitric acid, hydrochloric acid, and sulfuric acid.

[0031]

[0032] A chemical-mechanical polishing slurry composition according to one embodiment of the present invention has low polishing performance for a low-k dielectric film and high polishing performance for a silicon nitride film, thereby realizing excellent selective polishing characteristics.

[0033] In addition, the chemical-mechanical polishing slurry composition according to one embodiment of the present invention has the advantage of being able to easily control the ratio of the polishing speed of the silicon nitride film to the polishing speed of the low-k dielectric film within a specific range.

[0034] In addition, the chemical-mechanical polishing slurry composition according to one embodiment of the present invention can implement an improved removal rate profile as the flowability is improved due to the excellent dispersion of the abrasive within the composition.

[0035] In addition, by using a chemical-mechanical polishing slurry composition according to one embodiment of the present invention, a semiconductor device having superior reliability and characteristics can be manufactured.

[0036] The effects of the present invention are not limited to the effects described above, and effects not mentioned will be clearly understood by those skilled in the art from the present specification and the attached drawings.

[0037]

[0038] Figure 1 shows the FT-IR spectrum of an abrasive according to one embodiment of the present invention.

[0039]

[0040] Throughout this specification, whenever a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated.

[0041] Throughout this specification, when it is said that an element is "on" another element, this includes not only cases where the element is in contact with the other element, but also cases where another element exists between the two elements.

[0042] Throughout this specification, the unit “parts by weight” may mean the weight ratio between each component.

[0043] Throughout this specification, terms containing ordinal numbers, such as "first" and "second," are used to distinguish one component from another and are not limited by the ordinal numbers. For example, within the scope of the invention, the first component may also be referred to as the second component, and similarly, the second component may be referred to as the first component.

[0044] Throughout the present specification, the "weight average molecular weight", "molecular weight", etc. of a compound can be calculated using the molecular weight and molecular weight distribution of the compound. Specifically, a sample having a concentration of 1 wt% of the compound is prepared by adding tetrahydrofuran (THF) and the compound to a 1 ml glass bottle, and a standard sample (polystyrene) and the sample sample are filtered through a filter (pore size: 0.45 μm), and then injected into a GPC injector. The elution time of the sample sample is compared with the calibration curve of the standard sample, thereby obtaining the molecular weight and molecular weight distribution of the compound. At this time, Infinity II 1260 (Agilient) can be used as the measuring device, and the flow rate can be set to 1.00 mL / min and the column temperature to 40.0 °C.

[0045]

[0046] Hereinafter, the present specification will be described in more detail.

[0047] One embodiment of the present invention provides a chemical-mechanical polishing slurry composition comprising: an abrasive having a positively charged surface; and a first polishing selectivity control agent; wherein the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film.

[0048] A chemical-mechanical polishing slurry composition according to one embodiment of the present invention has low polishing performance for a low-k dielectric film and high polishing performance for a silicon nitride film, thereby realizing excellent selective polishing characteristics. In addition, the chemical-mechanical polishing slurry composition has the advantage of easily controlling the ratio of the polishing rate of the silicon nitride film to the polishing rate of the low-k dielectric film within a specific range. In addition, the chemical-mechanical polishing slurry composition has excellent dispersion of the abrasive within the composition, thereby improving flowability, and thus can realize an improved removal rate profile. In addition, by using the chemical-mechanical polishing slurry composition, a semiconductor device with superior reliability and characteristics can be manufactured.

[0049] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition (CMP slurry composition) may include an abrasive having a positively charged surface. When an abrasive having a positively charged surface is used, the abrasive may exhibit excellent dispersibility, and the CMP slurry composition may exhibit excellent polishing performance.

[0050] According to one embodiment of the present invention, the zeta potential (ZP) of the abrasive may be 3 mV or more and 60 mV or less. Specifically, the zeta potential of the abrasive is 5 mV or more and 55 mV or less, 10 mV or more and 50 mV or less, 15 mV or more and 45 mV or less, 20 mV or more and 40 mV or less, 25 mV or more and 35 mV or less, 3 mV or more and 45 mV or less, 5 mV or more and 40 mV or less, 6 mV or more and 31 mV or less, 9 mV or more and 31 mV or less, 10 mV or more and 30 mV or less, 15 mV or more and 25 mV or less, 25 mV or more and 31 mV or less, 29 mV or more and 31 mV or less, 30 mV or more and 60 mV or less, 31 mV or more and 50 mV or less, 31 mV or more and 44 mV or less, 35 mV or more and 50 mV or less, 35 mV or more and 40 mV or less, or 40 It may be 45 mV or more and 45 mV or less. At this time, the zeta potential of the abrasive may be a value under the pH conditions of the CMP slurry composition described below. Specifically, the zeta potential of the abrasive may be a value at pH 5 to 9. The abrasive having the zeta potential range described above may have excellent dispersibility within the CMP slurry composition. Through this, the polishing performance of the CMP slurry composition may be further improved.

[0051] According to one embodiment of the present invention, the average size of the abrasive may be 30 nm or more and less than 80 nm. Specifically, the average size of the abrasive may be 35 nm or more and 75 nm or less, 40 nm or more and 70 nm or less, 40 nm or more and 65 nm or less, 40 nm or more and 60 nm or less, 30 nm or more and 60 nm or less, 40 nm or more and 60 nm or less, 40 nm or more and 50 nm or less, 50 nm or more and 80 nm or less, or 60 nm or more and 70 nm or less. When the size of the abrasive is within the above-mentioned range, the abrasive can be more homogeneously dispersed in the CMP slurry composition, and the polishing performance of the CMP slurry composition can be improved.

[0052] According to one embodiment of the present invention, the abrasive may include at least one of silica, cerium oxide, and cerium hydroxide. Specifically, the abrasive may include at least one of cerium oxide and cerium hydroxide. When the aforementioned type of abrasive is used, the CMP slurry composition can exhibit excellent polishing performance.

[0053] According to one embodiment of the present invention, based on 100 parts by weight of the chemical-mechanical polishing slurry composition, the content of the abrasive may be 0.1 parts by weight or more and 1.25 parts by weight or less. Specifically, the content of the abrasive may be 0.1 parts by weight or more and 1 part by weight or less, 0.1 parts by weight or more and 0.9 parts by weight or less, 0.2 parts by weight or more and 0.8 parts by weight or less, 0.3 parts by weight or more and 0.7 parts by weight or less, 0.4 parts by weight or more and 0.6 parts by weight or less, 0.1 parts by weight or more and 0.5 parts by weight or less, 0.1 parts by weight or more and 0.4 parts by weight or less, 0.1 parts by weight or more and 0.3 parts by weight or less, 0.5 parts by weight or more and 1 part by weight or less, or 0.6 parts by weight or more and 0.8 parts by weight or less, based on 100 parts by weight of the CMP slurry. In addition, the content of the abrasive may be 0.5 parts by weight or more and 1.25 parts by weight or less, 0.5 parts by weight or more and 1 part by weight or less, 0.5 parts by weight or more and 0.75 parts by weight or less, 0.75 parts by weight or more and 1.25 parts by weight or less, 0.75 parts by weight or more and 1.25 parts by weight or less, or 1 part by weight or more and 1.25 parts by weight or less, based on 100 parts by weight of the CMP slurry. By adjusting the content of the abrasive included in the CMP slurry composition within the above-described range, it may be easier to control the polishing rate of the CMP slurry composition for a low-k dielectric film to be lower than the polishing rate for a silicon nitride film. Furthermore, when the content of the abrasive is within the above-described range, the CMP slurry composition can implement an appropriate polishing rate for a silicon nitride film while effectively suppressing an increase in the polishing rate for a low-k dielectric film.

[0054] According to one embodiment of the present invention, the first polishing selectivity regulator may include at least one of a zwitterionic organic acid and a zwitterionic amino acid. When at least one of a zwitterionic organic acid and a zwitterionic amino acid is used as the first polishing selectivity regulator, the CMP slurry composition can effectively implement polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film. In particular, the polishing rate of the CMP slurry composition for a low-k dielectric film can be effectively reduced. Furthermore, the CMP slurry composition can easily implement a ratio of the polishing rate of the silicon nitride film to a higher polishing rate of the low-k dielectric film.

[0055] According to one embodiment of the present invention, the first polishing selectivity regulator may include at least one of picolinic acid, aspartic acid, and glutamic acid. When the above-described first polishing selectivity regulator is used, a CMP slurry composition can be prepared that can effectively exhibit polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film. In particular, the zwitterionic organic acid and the zwitterionic amino acid have both positive and negative charges, and can perform passivation dynamics for an abrasive having the above-described size. Through this, the polishing characteristics of the CMP slurry composition for a low-k dielectric film can be effectively suppressed.

[0056] According to one embodiment of the present invention, based on 100 parts by weight of the chemical-mechanical polishing slurry composition, the content of the first polishing selectivity regulator may be 0.001 parts by weight or more and 0.1 parts by weight or less. Specifically, the content of the first polishing selectivity regulator may be 0.001 parts by weight or more and 0.05 parts by weight or less, 0.001 parts by weight or more and 0.01 parts by weight or less, 0.001 parts by weight or more and 0.005 parts by weight or less, 0.005 parts by weight or more and 0.1 parts by weight or less, 0.01 parts by weight or more and 0.1 parts by weight or less, 0.01 parts by weight or more and 0.05 parts by weight or less, or 0.05 parts by weight or more and 0.1 parts by weight or less, based on 100 parts by weight of the CMP slurry composition. In addition, the content of the first polishing selectivity regulator may be 0.005 parts by weight or more and 0.05 parts by weight or less, 0.01 parts by weight or more and 0.04 parts by weight or less, 0.02 parts by weight or more and 0.03 parts by weight or less, 0.005 parts by weight or more and 0.03 parts by weight or less, 0.01 parts by weight or more and 0.02 parts by weight or less, 0.02 parts by weight or more and 0.05 parts by weight or less, or 0.03 parts by weight or more and 0.04 parts by weight or less, based on 100 parts by weight of the CMP slurry composition. By controlling the content of the first polishing selectivity regulator included in the CMP slurry composition within the above-described range, a CMP slurry composition capable of implementing an appropriate polishing rate for a silicon nitride film while effectively suppressing an increase in the polishing rate for a low-k dielectric film can be provided. Furthermore, the CMP slurry composition can easily achieve a ratio of the polishing speed of a silicon nitride film to the polishing speed of a larger low-k dielectric film.

[0057] According to one embodiment of the present invention, the weight ratio of the first polishing selectivity regulator and the abrasive may be 1:5 to 1:500. Specifically, the weight ratio of the first polishing selectivity regulator and the abrasive may be 1:10 to 1:100, 1:10 to 1:90, 1:10 to 1:80, 1:20 to 1:60, 1:30 to 1:50, 1:10 to 1:50, 1:20 to 1:50, 1:30 to 1:40, 1:50 to 1:100, 1:50 to 1:90, 1:50 to 1:85, or 1:50 to 1:60. In addition, the weight ratio of the first polishing selectivity regulator and the polishing agent may be 1:10 to 1:500, 1:10 to 1:125, 1:10 to 1:100, 1:10 to 1:75, 1:10 to 1:50, 1:50 to 1:500, 1:50 to 1:125, 1:50 to 1:100, 1:50 to 1:75, 1:75 to 1:500, 1:75 to 1:125, 1:75 to 1:100, 1:100 to 1:500, 1:100 to 1:125, or 1:125 to 1:500.

[0058] When the weight ratio of the first polishing selectivity regulator and the abrasive is within the above-mentioned range, the CMP slurry composition can achieve an appropriate polishing rate for a silicon nitride film while effectively suppressing an increase in the polishing rate for a low-k dielectric film. In addition, by adjusting the weight ratio of the first polishing selectivity regulator and the abrasive within the above-mentioned range, the dispersibility of the CMP slurry composition can be effectively prevented from deteriorating.

[0059] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include a second polishing selectivity regulator containing a hydroxyl group-containing compound. When the second polishing selectivity regulator containing a hydroxyl group-containing compound and the first polishing selectivity regulator are used together, the CMP slurry composition can more easily implement polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film. Furthermore, the polishing rate for a low-k dielectric film and the polishing rate for a silicon nitride film of the CMP slurry composition can be more diversely controlled, and it can be easy to control the ratio of the polishing rate for the silicon nitride film to the polishing rate for the low-k dielectric film within a desired range.

[0060] According to one embodiment of the present invention, the hydroxyl group-containing compound may include at least one of a polysaccharide compound and a glycol compound. The polysaccharide compound may include at least one of cellulose, starch, glycogen, chitin, arabinoxylan, and pectin. In addition, the glycol compound may include at least one of a non-polymerized glycol compound and a polymerized glycol compound. For example, the non-polymerized glycol compound may include a glycol compound having 2 to 5 carbon atoms. For example, the non-polymerized glycol compound may include at least one of ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. In addition, the polymerized glycol compound may include a polymer or copolymer polymerized from a glycol monomer having 2 to 5 carbon atoms. For example, the polymerized glycol compound may include at least one of polyethylene glycol, polypropylene glycol, and polybutylene glycol. When the above-described hydroxyl group-containing compound is used, the CMP slurry composition can more easily realize polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film. In addition, when a second polishing selectivity modifier including the hydroxyl group-containing compound is used, dishing in the silicon nitride film can be effectively prevented.

[0061] The molecular weight of the glycol compound may be 1,000 g / mol or more and 40,000 g / mol or less. When a polymerized glycol compound is used as the glycol compound, compared to when a non-polymerized glycol compound is used, the CMP slurry composition can more easily implement polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film, and can effectively prevent dishing from occurring in the silicon nitride film.

[0062] According to one embodiment of the present invention, the molecular weight of the glycol compound may be 1,000 g / mol or more and 40,000 g / mol or less. Specifically, the molecular weight of the glycol compound is 3,000 g / mol or more and 35,000 g / mol or less, 5,000 g / mol or more and 30,000 g / mol or less, 10,000 g / mol or more and 25,000 g / mol or less, 15,000 g / mol or more and 20,000 g / mol or less, 1,000 g / mol or more and 25,000 g / mol or less, 3,500 g / mol or more and 22,000 g / mol or less, 5,000 g / mol or more and 20,000 g / mol or less, 10,000 g / mol or more and 20,000 g / mol or less, 15,000 g / mol or more and 40,000 g / mol or less, 20,000 g / mol or more and 40,000 g / mol or less, or 20,000 g / mol or more and 35,000 g / mol or less. At this time, the molecular weight of the glycol-based compound may be a weight average molecular weight. When the molecular weight of the glycol-based compound is within the above-mentioned range, it may be easier to control the polishing rate of the CMP slurry composition for the silicon nitride film to be greater than the polishing rate for the low-k dielectric film. Furthermore, the CMP slurry composition can easily implement a ratio of the polishing rate of the silicon nitride film to a higher polishing rate of the low-k dielectric film.

[0063] According to one embodiment of the present invention, the content of the second polishing selectivity regulator may be 0.001 part by weight or more and 0.5 part by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition. Specifically, the content of the second polishing selectivity regulator may be 0.01 part by weight or more and 0.5 part by weight or less, 0.05 part by weight or more and 0.4 part by weight or less, 0.1 part by weight or more and 0.3 part by weight or less, 0.01 part by weight or more and 0.1 part by weight or less, 0.01 part by weight or more and 0.05 part by weight or less, 0.01 part by weight or more and 0.03 part by weight or less, 0.2 part by weight or more and 0.5 part by weight or less, or 0.3 part by weight or more and 0.4 part by weight or less, based on 100 parts by weight of the CMP slurry composition. In addition, the content of the second polishing selectivity control agent may be 0.001 part by weight or more and 0.05 part by weight or less, 0.001 part by weight or more and 0.03 part by weight or less, 0.001 part by weight or more and 0.02 part by weight or less, 0.001 part by weight or more and 0.01 part by weight or less, 0.01 part by weight or more and 0.05 part by weight or less, 0.01 part by weight or more and 0.03 part by weight or less, 0.01 part by weight or more and 0.02 part by weight or less, 0.02 part by weight or more and 0.03 part by weight or less, or 0.03 part by weight or more and 0.05 part by weight or less, based on 100 parts by weight of the CMP slurry composition.

[0064] By controlling the content of the second polishing selectivity control agent included in the CMP slurry composition within the aforementioned range, dishing can be effectively prevented from occurring in a silicon nitride film. In addition, a CMP slurry composition can be provided that can achieve an appropriate polishing rate for a silicon nitride film while effectively suppressing an increase in the polishing rate for a low-k dielectric film.

[0065] According to one embodiment of the present invention, the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator may be 1:0.1 to 1:5. Specifically, the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator may be 1:1 to 1:3, 1:1.5 to 1:2.5, 1:1 to 1:2, or 1:1.5 to 1:3. In addition, the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator may be 1:0.1 to 1:3, 1:0.1 to 1:2, 1:0.1 to 1:1, 1:1 to 1:5, 1:2 to 1:5, 1:2 to 1:3, or 1:3 to 1:5. By adjusting the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator within the aforementioned range, the polishing rate for the low-k dielectric film and the polishing rate for the silicon nitride film of the CMP slurry composition can be more diversely controlled, and it can be easy to adjust the ratio of the polishing rate of the silicon nitride film to the polishing rate of the low-k dielectric film within the desired range.

[0066] According to one embodiment of the present invention, the weight ratio of the second polishing selectivity regulator and the abrasive may be 1:10 to 1:500. Specifically, the weight ratio of the second polishing selectivity regulator and the abrasive may be 1:15 to 1:50, 1:20 to 1:40, 1:25 to 1:35, 1:15 to 1:35, or 1:30 to 1:50. Additionally, the weight ratio of the second polishing selectivity regulator and the polishing agent may be 1:10 to 1:50, 1:10 to 1:25, 1:10 to 1:17, 1:15 to 1:500, 1:15 to 1:50, 1:15 to 1:25, 1:25 to 1:500, 1:25 to 1:50, or 1:50 to 1:500.

[0067] When the weight ratio of the second polishing selectivity regulator and the abrasive is within the above-mentioned range, the CMP slurry composition can achieve an appropriate polishing rate for a silicon nitride film while effectively suppressing an increase in the polishing rate for a low-k dielectric film.

[0068] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a pH of 9 or less. Specifically, the pH of the CMP slurry composition may be 5 or more and 9 or less, 5 or more and 8 or less, 5 or more and 7 or less, 5 or more and 6 or less, 6 or more and 8 or less, or 7 or more and 8 or less. By adjusting the acidity of the CMP slurry composition within the above-described range, the dispersibility of the polishing agent can be effectively suppressed from deteriorating. In addition, the CMP slurry composition satisfying the above-described acidity range can effectively implement polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film.

[0069] According to one embodiment of the present invention, the dielectric constant of the low-k dielectric film may be 4 or less. Specifically, the dielectric constant of the low-k dielectric film may be 1.5 or more and 4 or less.

[0070] The low-k dielectric film may include any low-k dielectric film used in the art without limitation, as long as it satisfies the above dielectric constant. For example, the low-k dielectric film may include at least one of polyimide, PTFE, SiCO, SiCOH, SiOCN, SiOF, SiC, and SiCN.

[0071] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a ratio of a polishing rate of a silicon nitride film to a polishing rate of a low-k dielectric film of 1.4 or more and 2.3 or less. Specifically, the CMP slurry composition may have a ratio of a polishing rate of a low-k dielectric film to a polishing rate of a silicon nitride film of 1:1.6 to 1:2.1, 1:1.8 to 1:2.0, 1:1.4 to 1:2.0, or 1:1.8 to 1:2.3. The CMP slurry composition in which the ratio of a polishing rate of a silicon nitride film to a polishing rate of a low-k dielectric film satisfies the above-described range can implement excellent polishing properties for a silicon nitride film, while effectively suppressing an increase in polishing properties for a low-k dielectric film.

[0072] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a polishing rate for a silicon nitride film of 85 Å / min or more and 1,000 Å / min or less, 250 Å / min or more and 800 Å / min or less, 300 Å / min or more and 700 Å / min or less, or 400 Å / min or more and 600 Å / min or less. The CMP slurry composition having a polishing rate for a silicon nitride film satisfying the above-described range can effectively exhibit improved polishing properties for the silicon nitride film.

[0073] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may have a polishing rate for a low-k dielectric film of 65 Å / min or more and 900 Å / min or less, 100 Å / min or more and 650 Å / min or less, 130 Å / min or more and 450 Å / min or less, or 150 Å / min or more and 300 Å / min or less. The CMP slurry composition having a polishing rate for a low-k dielectric film satisfying the above-mentioned range can effectively exhibit suppressed polishing characteristics for a low-k dielectric film.

[0074] Figure 1 shows the FT-IR spectrum of an abrasive according to one embodiment of the present invention.

[0075] According to one embodiment of the present invention, the surface of the abrasive contains silicon, and in the FT-IR spectrum, it has a wavelength of 850 to 950 cm -1 Peaks appearing at 1,000 to 1,050 cm -1 It may have a peak appearing in . The silicon included on the surface of the abrasive may be derived from the dispersion stabilizer described below.

[0076] Referring to Figure 1, the abrasive has a 910 cm-cm FT-IR spectrum indicating a “Si-O-Ce” bond. -1 The peak corresponding to 1017 cm, representing the “Si-O-Si” bond -1 can exhibit a peak corresponding to that. That is, the abrasive whose surface is modified with a dispersion stabilizer can exhibit the aforementioned peak in the FT-IR spectrum.

[0077] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include a dispersion stabilizer. By adding a dispersion stabilizer to the CMP slurry composition, the dispersibility and dispersion stability of the abrasive can be effectively improved. Specifically, the abrasive can have its surface modified with the dispersion stabilizer, thereby improving the dispersibility and dispersion stability within the CMP slurry composition.

[0078] According to one embodiment of the present invention, the dispersion stabilizer may include a compound represented by the following chemical formula 1.

[0079] [Chemical Formula 1]

[0080]

[0081] In the above chemical formula 1, R1 to R3 are each independently a straight-chain or branched-chain alkoxy group having 1 to 5 carbon atoms, and R4 is an alkylene having 2 to 5 carbon atoms. When a dispersion stabilizer including a compound represented by the above chemical formula 1 is used, the dispersibility and dispersion stability of the abrasive can be effectively improved. For example, the compound represented by the above chemical formula 1 can include at least one of APTES ((3-Aminopropyl)triethoxysilane) and APTMS ((3-Aminopropyl)trimethoxysilane).

[0082] According to one embodiment of the present invention, the content of the dispersion stabilizer may be 0.01 parts by weight or more and 0.1 parts by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition. When the content of the dispersion stabilizer is within the above-mentioned range, the surface of the abrasive can be effectively modified, thereby improving dispersibility.

[0083] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include a pH regulator including at least one of a basicity regulator and an acidity regulator. By including the pH regulator, the CMP slurry composition may have the acidity range described above. The content of the pH regulator may be 0.0005 parts by weight or more and 2 parts by weight or less, based on 100 parts by weight of the CMP slurry composition. In order to adjust the acidity of the CMP slurry composition to a desired range, the content of the pH regulator may be adjusted within the above-described range.

[0084] According to one embodiment of the present invention, the pKa value of the basicity regulator may be 11 or less. Specifically, the pKa value of the basicity regulator may be 5 or more and 11 or less. By using the basicity regulator having a pKa value satisfying the above-mentioned range, the pH of the CMP slurry composition can be easily controlled to a desired value. The basicity regulator may include, for example, at least one of imidazole (pKa value: 6.93), diethanolamine (pKa value: 8.88), monoethanolamine (pKa value: 9.5), and triethanolamine (pKa value: 10.65). However, the type of the basicity regulator is not limited thereto, and a substance satisfying the above-mentioned pKa value can be used as the basicity regulator.

[0085] According to one embodiment of the present invention, the acidity regulator may include at least one of acetic acid, nitric acid, hydrochloric acid, and sulfuric acid. By using the acidity regulator, the pH of the CMP slurry composition can be easily controlled to a desired value.

[0086] According to one embodiment of the present invention, the chemical-mechanical polishing slurry composition may further include one or more biocides. The biocides are used to prevent microbial contamination, and for example, polyhexamethylene guanidine (PHMG) or isothiazolinone-based compounds may be used. As the isothiazolinone-based compounds, at least one selected from the group consisting of methylisothiazolinone (MIT), chloromethyl isothiazolinone (CMIT), and 1,2-benzisothiazol-3(2H)-one ((1,2-benzisothiazol-3(2H)-one: Benzisothiazolinone, BIT) may be used.

[0087] According to one embodiment of the present invention, the content of the biocide may be 0.0001 parts by weight or more and 0.1 parts by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition. When the content of the biocide included in the CMP slurry composition is within the above-mentioned range, an excellent sterilizing effect can be implemented, thereby preventing the generation of microorganisms and effectively suppressing changes in CMP performance.

[0088]

[0089] Hereinafter, the present invention will be described in detail using examples. However, the examples according to the present invention may be modified in various ways, and the scope of the present invention is not limited to the examples described below. The examples in this specification are provided to more fully explain the present invention to those of ordinary skill in the art.

[0090]

[0091] Experimental example

[0092] Abrasive size analysis

[0093] The average size of the abrasives used was analyzed using DLS (Litesizer 500; Anton Paar).

[0094]

[0095] pH measurement

[0096] The acidity of the CMP slurry composition was measured using Metrohm 704 (Metrohm).

[0097]

[0098] Polishing speed measurement

[0099] A 12-inch blanket of SiOCH, a low-k dielectric film, and a 12-inch blanket of silicon nitride film (PE-Nit) were prepared as wafers to be polished.

[0100] Polishing was performed using AP-300 (CTS) as a polishing equipment (Polisher) under the evaluation conditions shown in Table 1 below, and the polishing speed was calculated using the following mathematical equation 1. The thickness of the wafer was measured using ST-5000 (K-Mac).

[0101]

[0102] RPMPlaten93Head87CMP slurry compositionFlow rate200 ml / minPressure(psi)W12.5W22W32W42W52PadIC1010

[0103]

[0104] [Mathematical Formula 1]

[0105] Polishing rate = (wafer thickness before CMP rotation - wafer thickness after CMP rotation) / CMP process time (min)

[0106]

[0107] Zeta potential measurement

[0108] The zeta potential of the abrasive was measured using DLS (Litesizer 500; Anton Paar) according to the conditions in Table 2 below.

[0109]

[0110] Measurement principle Electrophoretic light scattering (ELS) / cmPALS Measurement range > + / -1000 mV Size range 3.8 nm to 100 μm (diameter) Minimum sample concentration 0.1 mg / mL (lysozyme) Maximum sample concentration 70 % w / v (sample dependent) Maximum sample conductivity 200 mS / cm

[0111]

[0112] Examples 1 and 2

[0113] Example 1

[0114] Silica having an average size of 76.5 nm was prepared as an abrasive, picolinic acid was prepared as a first polishing selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS ((3-Aminopropyl)trimethoxysilane) was prepared as a dispersion stabilizer. Thereafter, the abrasive, the first polishing selectivity regulator, the pH regulator, and the dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 15 parts by weight, the content of the first polishing selectivity regulator was 0.01 parts by weight, the content of the imidazole was 0.1 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0115]

[0116] Example 2

[0117] A CMP slurry composition was prepared in the same manner as in Example 1, except that glutamic acid was used instead of picolinic acid as the first polishing selectivity control agent as shown in Table 3 below.

[0118]

[0119] Using the manufactured CMP slurry composition, a CMP process was performed on a low-k dielectric film (SiOCH) and a silicon nitride film, and the polishing rate for the CMP process is shown in Table 4 below. In addition, the zeta potential (ZP) value of the abrasive included in the CMP slurry composition and the pH of the CMP slurry composition were measured using the above-described method, and the results are shown in Table 4 below.

[0120]

[0121] (1) Abrasive (2) Content (1) / (2) (3-1) Content (3-2) Content (4) Content Type Size (nm) Content Example 1 Silica 76.515 Picolinic acid / 0.011, 5000.10.01 0.03 Example 2 Silica 76.515 Glutamic acid / 0.011, 5000.10.01 0.03

[0122]

[0123] In the above Table 3, (2) represents the first polishing selectivity regulator, (3-1) represents imidazole, (3-2) represents nitric acid, and (4) represents the dispersion stabilizer. In addition, the content of the polishing agent, the content of the first polishing selectivity regulator, the content of imidazole and nitric acid, and the content of the dispersion stabilizer are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0124]

[0125] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 1866176851.1 Example 2896196751.1

[0126]

[0127] Referring to Table 3 and Table 4 above, it was confirmed that the CMP slurry compositions manufactured in Examples 1 and 2 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film.

[0128]

[0129] Examples 3 to 7

[0130] Example 3

[0131] Ceria having an average size of 30 nm was prepared as an abrasive, picolinic acid was prepared as a first abrasive selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS was prepared as a dispersion stabilizer. Thereafter, the abrasive, the first abrasive selectivity regulator, the pH regulator, and the dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.5 parts by weight, the content of the first abrasive selectivity regulator was 0.01 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0132]

[0133] Examples 4 to 7

[0134] A CMP slurry composition was prepared in the same manner as in Example 3, except that abrasives having different average sizes were used as shown in Table 5 below.

[0135]

[0136] In the same manner as in Example 1, a CMP process was performed on a low-k dielectric film (SiOCH) and a silicon nitride film, and the polishing rate for the CMP process is shown in Table 6 below. In addition, the zeta potential (ZP) value of the abrasive included in the CMP slurry composition and the pH of the CMP slurry composition were measured and shown in Table 6 below.

[0137]

[0138] (1) Abrasive (2) Content (1) / (2) (3-1) Content (3-2) Content (4) Content Type Size (nm) Content Example 3 Ceria 300.50.01500.40.010.03 Example 4 Ceria 400.50.01500.40.010.03 Example 5 Ceria 450.50.01500.40.010.03 Example 6 Ceria 600.50.01500.40.010.03 Example 7 Ceria 800.50.01500.40.010.03

[0139]

[0140] In the above Table 5, (2) represents the first polishing selectivity regulator, (3-1) represents imidazole, (3-2) represents nitric acid, and (4) represents a dispersion stabilizer. In addition, the content of the polishing agent, the content of the first polishing selectivity regulator, the content of imidazole and nitric acid, and the content of the dispersion stabilizer are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0141]

[0142] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 38311452591.8 Example 48312184041.9 Example 58312284341.9 Example 68292784941.8 Example 78255026121.2

[0143]

[0144] Referring to Tables 5 and 6 above, it was confirmed that the CMP slurry compositions manufactured in Examples 3 to 7 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film. In addition, in the case of Examples 3 to 7, it was confirmed that while suppressed polishing performance was achieved for a low-k dielectric film, improved polishing performance was exhibited for a silicon nitride film. In addition, it was confirmed that the polishing rate of the CMP slurry composition for a low-k dielectric film and a silicon nitride film was controlled by adjusting the average size of the abrasive.

[0145]

[0146] Examples 8 to 12

[0147] Example 8

[0148] Ceria having an average size of 45 nm was prepared as an abrasive, picolinic acid was prepared as a first abrasive selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS was prepared as a dispersion stabilizer. Thereafter, a CMP slurry composition was prepared by adding the abrasive, the first abrasive selectivity regulator, the pH regulator, and the dispersion stabilizer to deionized water. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.1 parts by weight, the content of the first abrasive selectivity regulator was 0.01 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0149]

[0150] Examples 9 to 12

[0151] A CMP slurry composition was prepared in the same manner as in Example 8, except that the content of the abrasive was adjusted as shown in Table 7 below.

[0152]

[0153] In the same manner as in Example 1, a CMP process was performed on a low-k dielectric film (SiOCH) and a silicon nitride film, and the polishing rate for the CMP process is shown in Table 8 below. In addition, the zeta potential (ZP) value of the abrasive included in the CMP slurry composition and the pH of the CMP slurry composition were measured and shown in Table 8 below.

[0154]

[0155] (1) Abrasive (2) Content (1) / (2) (3-1) Content (3-2) Content (4) Content Type Size (nm) Content Example 8 Ceria 450.10.01 100.40.01 0.03 Example 9 Ceria 450.50.01 500.40.01 0.03 Example 10 Ceria 450.750.01 750.40.01 0.03 Example 11 Ceria 4510.01 1000.40.010.03 Example 12 Ceria 451.250.01 1250.40.01 0.03

[0156]

[0157] In the above Table 7, (2) represents the first polishing selectivity regulator, (3-1) represents imidazole, (3-2) represents nitric acid, and (4) represents the dispersion stabilizer. In addition, the content of the polishing agent, the content of the first polishing selectivity regulator, the content of imidazole and nitric acid, and the content of the dispersion stabilizer are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0158]

[0159] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 88311754012.3 Example 98312784941.8 Example 108312885021.7 Example 118312995101.7 Example 128318489821.2

[0160]

[0161] Referring to Tables 7 and 8 above, it was confirmed that the CMP slurry compositions manufactured in Examples 8 to 12 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film. In addition, it was confirmed that in the case of Examples 8 to 12, while suppressed polishing performance was achieved for a low-k dielectric film, improved polishing performance was exhibited for a silicon nitride film. In addition, it was confirmed that the polishing rate of the CMP slurry composition for a low-k dielectric film and a silicon nitride film was controlled by adjusting the content of the abrasive.

[0162]

[0163] Examples 13 to 15

[0164] Example 13

[0165] Ceria having an average size of 45 nm was prepared as an abrasive, picolinic acid was prepared as a first abrasive selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS was prepared as a dispersion stabilizer. Thereafter, the abrasive, the first abrasive selectivity regulator, the pH regulator, and the dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.5 parts by weight, the content of the first abrasive selectivity regulator was 0.01 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0166]

[0167] Examples 14 and 15

[0168] A CMP slurry composition was prepared in the same manner as in Example 13, except that the type of the first polishing selectivity control agent was adjusted as shown in Table 9 below.

[0169]

[0170] In the same manner as in Example 1, a CMP process was performed on a low-k dielectric film (SiOCH) and a silicon nitride film, and the polishing rate for the CMP process is shown in Table 10 below. In addition, the zeta potential (ZP) value of the abrasive included in the CMP slurry composition and the pH of the CMP slurry composition were measured, and are shown in Table 10 below.

[0171]

[0172] (1) Abrasive (2) (1) / (2) Type Content Type Content Example 13 Ceria 0.5 Picolinic acid 0.0150 Example 14 Ceria 0.5 Aspartic acid 0.0150 Example 15 Ceria 0.5 Glutamic acid 0.0150

[0173]

[0174] In the above Table 9, (2) refers to the first polishing selectivity regulator. In addition, the content of the polishing agent and the content of the first polishing selectivity regulator are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0175]

[0176] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 138312784241.5 Example 148312984141.4 Example 158312844331.5

[0177]

[0178] Referring to Tables 9 and 10 above, it was confirmed that the CMP slurry compositions manufactured in Examples 13 to 15 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film. In addition, it was confirmed that Examples 13 to 15 exhibited suppressed polishing performance for a low-k dielectric film, while exhibiting improved polishing performance for a silicon nitride film.

[0179] That is, it can be seen that when the first polishing selectivity control agent of the aforementioned type is used, a CMP slurry composition having a polishing rate for a low-k dielectric film lower than a polishing rate for a silicon nitride film can be easily implemented.

[0180]

[0181] Examples 16 to 20

[0182] Example 16

[0183] Ceria having an average size of 45 nm was prepared as an abrasive, picolinic acid was prepared as a first abrasive selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS was prepared as a dispersion stabilizer. Thereafter, the abrasive, the first abrasive selectivity regulator, the pH regulator, and the dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.5 parts by weight, the content of the first abrasive selectivity regulator was 0.01 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0184]

[0185] Examples 17 to 20

[0186] A CMP slurry composition was prepared in the same manner as in Example 16, except that the content of the first polishing selectivity control agent was adjusted as shown in Table 11 below in Example 17.

[0187]

[0188] (1) Abrasive (2) Content (1) / (2) (3-1) Content (3-2) Content (4) Content Type Size (nm) Content Example 16 Ceria 450.50.00 15000.40.0 10.03 Example 17 Ceria 450.50.00 51000.40.0 10.03 Example 18 Ceria 450.50.0 1500.40.0 10.03 Example 19 Ceria 450.50.05 100.40.0 10.03 Example 20 Ceria 450.50.15.00.40.0 10.03

[0189]

[0190] In the above Table 11, (2) represents the first polishing selectivity regulator, (3-1) represents imidazole, (3-2) represents nitric acid, and (4) represents a dispersion stabilizer. In addition, the content of the polishing agent, the content of the first polishing selectivity regulator, the content of imidazole and nitric acid, and the content of the dispersion stabilizer are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0191]

[0192] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 168315506721.2 Example 178312984161.4 Example 188312784241.5 Example 198311524162.7 Example 2083166851.3

[0193]

[0194] Referring to Tables 11 and 12 above, it was confirmed that the CMP slurry compositions manufactured in Examples 16 to 20 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film. In addition, it was confirmed that in the case of Examples 16 to 20, while suppressed polishing performance was achieved for a low-k dielectric film, improved polishing performance was exhibited for a silicon nitride film. In addition, it was confirmed that the polishing rate of the CMP slurry composition for a low-k dielectric film and a silicon nitride film was controlled by adjusting the content of the first polishing selectivity control agent.

[0195]

[0196] Examples 21 to 26

[0197] Example 21

[0198] Ceria having an average size of 45 nm was prepared as an abrasive, picolinic acid was prepared as a first polishing selectivity regulator, polyethylene glycol (PEG) having a weight average molecular weight of 20,000 g / mol was prepared as a second polishing selectivity regulator, imidazole and nitric acid were prepared as pH regulators, and APTMS was prepared as a dispersion stabilizer. Thereafter, the abrasive, the first polishing selectivity regulator, the second polishing selectivity regulator, the pH regulator, and the dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.5 parts by weight, the content of the first polishing selectivity regulator was 0.01 parts by weight, the content of the second polishing selectivity regulator was 0.05 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0199]

[0200] Examples 22 to 25

[0201] A CMP slurry composition was prepared in the same manner as in Example 21, except that the content of the second polishing selectivity control agent was adjusted as shown in Table 13 below.

[0202]

[0203] Example 26

[0204] A CMP slurry composition was prepared in the same manner as in Example 21, except that the content and weight average molecular weight of the second polishing selectivity regulator were adjusted as shown in Table 13 below.

[0205]

[0206] (1) Content (2) Content (5) (1) / (2) (5) / (2) Content Mw (g / mol) Example 2 10.5 0.01 0.05 20,000 50 5 Example 2 20.5 0.01 0.03 20,000 50 3 Example 2 30.5 0.01 0.02 20,000 50 2 Example 2 40.5 0.01 0.01 20,000 50 1 Example 2 50.5 0.01 0.00 20,000 50 0.1 Example 2 60.5 0.01 0.01 35,000 50 1

[0207]

[0208] In the above Table 13, (1) represents an abrasive, (2) represents a first abrasive selectivity regulator, and (5) represents a second abrasive selectivity regulator. In addition, the content of the abrasive, the content of the first abrasive selectivity regulator, and the content of the second abrasive selectivity regulator are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0209]

[0210] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Example 218311122802.5 Example 228312124522.1 Example 238312275222.3 Example 248312745742.1 Example 258314056431.6 Example 268312985341.8

[0211]

[0212] Referring to Tables 13 and 14 above, it was confirmed that the CMP slurry compositions manufactured in Examples 21 to 26 had a lower polishing rate for a low-k dielectric film than for a silicon nitride film. In addition, it was confirmed that Examples 21 to 26 exhibited suppressed polishing performance for a low-k dielectric film while exhibiting improved polishing performance for a silicon nitride film. In addition, it was confirmed that Examples 21 to 26, in which the content of the second polishing selectivity modifier satisfying the above-described weight average molecular weight was adjusted within the above-described range, could produce a CMP slurry composition capable of implementing a ratio of the polishing rate of a silicon nitride film to a higher polishing rate of a low-k dielectric film.

[0213]

[0214] Comparative Examples 1 and 2

[0215] Comparative Example 1

[0216] Silica with an average size of 90 nm was prepared as an abrasive, and picolinic acid was prepared as a first polishing selectivity regulator. Thereafter, the abrasive and the first polishing selectivity regulator were added to deionized water to prepare a CMP slurry composition. At this time, the content of the abrasive was 11.5 parts by weight and the content of the first polishing selectivity regulator was 0.01 parts by weight based on 100 parts by weight of the CMP slurry.

[0217]

[0218] Comparative Example 2

[0219] Ceria with an average size of 45 nm was prepared as an abrasive, imidazole and nitric acid were prepared as pH adjusters, and APTMS was prepared as a dispersion stabilizer. Thereafter, the abrasive, pH adjuster, and dispersion stabilizer were added to deionized water to prepare a CMP slurry composition. At this time, based on 100 parts by weight of the CMP slurry, the content of the abrasive was 0.5 parts by weight, the content of the imidazole was 0.4 parts by weight, the content of the nitric acid was 0.01 parts by weight, and the content of the dispersion stabilizer was 0.03 parts by weight.

[0220]

[0221] (1) Abrasive (2) Content (1) / (2) (3-1) Content (3-2) Content (4) Content Type Size (nm) Content Comparison Example 1 Silica 90 1 1.5 0.0 1 1,150 --- Comparison Example 2 Ceria 45 0.5 -- 0.4 0.0 1 0.03

[0222]

[0223] In the above Table 15, (2) represents the first polishing selectivity regulator, (3-1) represents imidazole, (3-2) represents nitric acid, and (4) represents the dispersion stabilizer. In addition, the content of the polishing agent, the content of the first polishing selectivity regulator, the content of imidazole and nitric acid, and the content of the dispersion stabilizer are contents (parts by weight) based on 100 parts by weight of the CMP slurry composition.

[0224]

[0225] pHZP(mV)(1) SiOCH(Å / min)(2) Si3N4(Å / min)(2) / (1) Comparative example 18 Negative charge 10596870.6 Comparative example 28338405340.6

[0226]

[0227] Referring to Tables 14 and 15 above, it was confirmed that in the case of Comparative Example 1, which used an abrasive having a negative surface charge, a CMP slurry composition was not provided in which the polishing rate for a low-k dielectric film was lower than that for a silicon nitride film. In addition, in the case of Comparative Example 2, which did not include the first polishing selectivity control agent, it was confirmed that a CMP slurry composition was not provided in which the polishing rate for a low-k dielectric film was lower than that for a silicon nitride film.

[0228]

[0229] Therefore, it can be seen that the CMP slurry composition according to one embodiment of the present invention can effectively implement polishing characteristics in which the polishing rate for a low-k dielectric film is lower than the polishing rate for a silicon nitride film.

Claims

1. An abrasive having a positively charged surface; and A first polishing selectivity regulator; A chemical-mechanical polishing slurry composition having a polishing rate for a low-k dielectric film lower than a polishing rate for a silicon nitride film.

2. In paragraph 1, A chemical-mechanical polishing slurry composition, wherein the zeta potential (ZP) of the above-mentioned abrasive is 3 mV or more and 60 mV or less.

3. In paragraph 1, A chemical-mechanical polishing slurry composition wherein the average size of the abrasive is 30 nm or more and less than 80 nm.

4. In paragraph 1, A chemical-mechanical polishing slurry composition wherein the abrasive comprises at least one of silica, cerium oxide and cerium hydroxide.

5. In paragraph 1, A chemical-mechanical polishing slurry composition, wherein the content of the abrasive is 0.1 part by weight or more and 1 part by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition.

6. In paragraph 1, The above first polishing selectivity regulator is, A chemical-mechanical polishing slurry composition comprising at least one of a zwitterionic organic acid and a zwitterionic amino acid.

7. In paragraph 1, The above first polishing selectivity regulator is, A chemical-mechanical polishing slurry composition comprising at least one of picolinic acid, aspartic acid and glutamic acid.

8. In paragraph 1, A chemical-mechanical polishing slurry composition, wherein the content of the first polishing selectivity regulator is 0.005 parts by weight or more and 0.05 parts by weight or less, based on 100 parts by weight of the chemical-mechanical polishing slurry composition.

9. In paragraph 1, A chemical-mechanical polishing slurry composition, wherein the weight ratio of the first polishing selectivity regulator and the abrasive is 1:10 to 1:

100.

10. In paragraph 1, A chemical-mechanical polishing slurry composition further comprising a second polishing selectivity adjusting agent comprising a hydroxyl group-containing compound.

11. In paragraph 10, A chemical-mechanical polishing slurry composition wherein the hydroxyl group-containing compound comprises at least one of a polysaccharide compound and a glycol compound.

12. In paragraph 10, A chemical-mechanical polishing slurry composition, wherein the weight ratio of the first polishing selectivity regulator and the second polishing selectivity regulator is 1:1 to 1:

3.

13. In paragraph 1, A chemical-mechanical polishing slurry composition having a pH of 9 or less.

14. In paragraph 1, A chemical-mechanical polishing slurry composition, wherein the dielectric constant of the above low-k dielectric film is 4 or less.

15. In paragraph 1, A chemical-mechanical polishing slurry composition having a ratio of a polishing rate of a silicon nitride film to a polishing rate of a low-k dielectric film of 1.4 or more and 2.3 or less.

16. In paragraph 1, The above chemical-mechanical polishing slurry composition comprises: A chemical-mechanical polishing slurry composition having a polishing speed of 400 Å / min or more and 600 Å / min or less for a silicon nitride film.

17. In paragraph 1, The above chemical-mechanical polishing slurry composition comprises: A chemical-mechanical polishing slurry composition having a polishing speed of 150 Å / min or more and 300 Å / min or less for a low-k dielectric film.

18. In paragraph 1, The surface of the above abrasive contains silicon, FT-IR spectrum at 850–950 cm -1 Peaks appearing at 1,000 to 1,050 cm -1 A chemical-mechanical polishing slurry composition having a peak appearing in .

19. In paragraph 1, A chemical-mechanical polishing slurry composition further comprising a pH adjusting agent comprising at least one of a base adjusting agent and an acid adjusting agent.

20. In paragraph 19, A chemical-mechanical polishing slurry composition wherein the pKa value of the above alkalinity regulator is 11 or less.

21. In paragraph 19, A chemical-mechanical polishing slurry composition wherein the acidity regulator comprises at least one of acetic acid, nitric acid, hydrochloric acid and sulfuric acid.

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