Apparatus and method for magnetron sputtering of amorphous carbon film and amorphous carbon film for photoresist deposited using same

Abstract

Provided is an apparatus for the magnetron sputtering of an amorphous carbon film. The apparatus for the magnetron sputtering of an amorphous carbon film comprises: a chamber having a gas inlet through which a process gas is introduced and a gas outlet through which the process gas is discharged, the inside of the chamber being maintained in a vacuum; a target unit that is provided facing a deposition target substrate disposed inside the chamber and includes a target made of amorphous carbon and a magnetron disposed behind the target; and a control unit for selectively applying at least one of DC power or RF power to the target, wherein a deposition film made of the amorphous carbon is formed on the deposition target substrate through a first ignition mode, a second ignition mode, and a deposition mode which are sequentially entered, and the control unit can simultaneously apply DC power and RF power to the target when in the first ignition mode, and can apply only RF power to the target when in the second ignition mode or the deposition mode.

Description

Amorphous carbon film magnetron sputtering device and method and amorphous carbon film for photoresist deposited using the same

[0001] The present invention relates to an amorphous carbon film magnetron sputtering device and method, and an amorphous carbon film for photoresist deposited using the same, and more specifically, to an amorphous carbon film magnetron sputtering device and method, and an amorphous carbon film for photoresist deposited using the same, which can control the surface roughness of the deposited amorphous carbon film so that the deposited amorphous carbon film can be used as a photoresist in a chemical etching process.

[0002]

[0003] The sputtering method generally generates plasma by causing a discharge between a substrate as an anode and a sputtering target composed of the composition of the deposition film to be formed as a cathode under a gas pressure of 10 Pa or less, and the positive ions in the plasma collide with the sputtering target as the cathode, causing particles with a force of attraction to accumulate on the substrate to form a deposition film.

[0004] These sputtering methods are broadly divided into RF sputtering, which uses radio frequency (RF), and DC sputtering, which uses direct current (DC), depending on the type of power that generates plasma.

[0005] Meanwhile, polyimide (PI), which is mainly used as a photoresist in chemical etching processes, can decompose at high temperatures, which can be problematic during the process.

[0006] On the other hand, carbon has high thermal stability and can be used stably even in high-temperature processes.

[0007] Additionally, carbon exhibits strong resistance to many chemicals, which means that when applied as a photoresist, it can be more robust during chemical etching processes.

[0008] Due to the unique physical and chemical properties of carbon, methods are being explored to replace polyimide (PI), which has been used as a photoresist in chemical etching processes, with carbon.

[0009] However, when carbon is deposited on a substrate using a conventional sputtering device to form a carbon film, it is difficult to replace polyimide because the surface roughness of the carbon film is much greater than the surface roughness required for the photoresist.

[0010] Therefore, a method is required to reduce the surface roughness of a carbon film to the level of a photoresist film so that the carbon film deposited through sputtering can be used as a photoresist film in a chemical etching process.

[0011]

[0012] The technical problem to be solved by the present invention is to provide an amorphous carbon film magnetron sputtering device and method capable of controlling the surface roughness of the deposited amorphous carbon film so that the deposited amorphous carbon film can be used as a photoresist in a chemical etching process.

[0013] Another technical problem to be solved by the present invention is to provide an amorphous carbon film magnetron sputtering device and method capable of depositing a film made of amorphous carbon that can replace existing photoresists.

[0014] The technical problems to be solved by the present invention are not limited to those described above.

[0015] In order to solve the above technical problem, the present invention provides an amorphous carbon film magnetron sputtering device.

[0016] According to one embodiment, the amorphous carbon film magnetron sputtering device comprises: a chamber having a vacuum inside and having a gas inlet for introducing a process gas and a gas outlet for discharging the process gas; a target portion provided to face a deposition target substrate disposed inside the chamber and including a target made of amorphous carbon and a magnetron disposed behind the target; and a control portion selectively applying at least one of DC power and RF power to the target, wherein a deposition film made of the amorphous carbon is formed on the deposition target substrate through a first ignition mode, a second ignition mode, and a deposition mode that are sequentially switched, wherein the control portion can simultaneously apply DC power and RF power to the target in the first ignition mode, and can apply only RF power to the target in the second ignition mode and the deposition mode.

[0017] According to one embodiment, among the first ignition mode, the second ignition mode, and the deposition mode, the first ignition mode time may be the shortest, and the deposition mode time may be the longest.

[0018] According to one embodiment, in the first ignition mode, the RF power applied to the target is relatively greater than the DC power applied to the target, and in the first ignition mode, the second ignition mode, and the deposition mode, the magnitude of the RF power applied to the target may all be the same.

[0019] According to one embodiment, the surface roughness (Ra) of the deposited film may be 4Å to 8Å.

[0020] According to one embodiment, the surface roughness (Ra) can be reduced as the area of ​​the deposited film becomes narrower.

[0021] Meanwhile, the present invention provides an amorphous carbon film for photoresist.

[0022] According to one embodiment, the amorphous carbon film for the photoresist may be deposited on a deposition target substrate through the magnetron sputtering device described above, and may have a surface roughness (Ra) of 4 Å to 8 Å.

[0023] In addition, the present invention provides a method for magnetron sputtering an amorphous carbon film.

[0024] According to one embodiment, the amorphous carbon film magnetron sputtering method includes the steps of: installing a target made of amorphous carbon and facing a deposition target substrate, and a magnetron disposed behind the target inside a chamber; supplying a process gas inside the chamber; and selectively applying at least one of DC power and RF power to the target, wherein the step of selectively applying at least one power may include a first ignition process of simultaneously applying DC power and RF power to the target, a second ignition process of applying only RF power to the target after the first ignition process, and a deposition process of continuously applying only RF power to the target after the second ignition process.

[0025]

[0026] According to an embodiment of the present invention, there is provided a chamber having a vacuum inside and a gas inlet for introducing a process gas and a gas outlet for discharging the process gas; a target portion provided to face a deposition target substrate disposed inside the chamber and including a target made of amorphous carbon and a magnetron disposed at the rear of the target; and a control portion selectively applying at least one of DC power and RF power to the target, wherein a deposition film made of the amorphous carbon is formed on the deposition target substrate through a first ignition mode, a second ignition mode, and a deposition mode that are sequentially switched, wherein the control portion can simultaneously apply DC power and RF power to the target in the first ignition mode, and can apply only RF power to the target in the second ignition mode and the deposition mode.

[0027] Accordingly, an amorphous carbon film magnetron sputtering device and method can be provided that can control the surface roughness of the deposited amorphous carbon film so that the deposited amorphous carbon film can be used as a photoresist in a chemical etching process.

[0028] That is, according to an embodiment of the present invention, an amorphous carbon film magnetron sputtering device and method can be provided that can significantly reduce the surface roughness of a deposited amorphous carbon film, and through this, a deposited film made of excellent quality amorphous carbon can be provided as a photoresist for a chemical etching process.

[0029] Accordingly, according to an embodiment of the present invention, etching quality can be improved.

[0030] Additionally, according to an embodiment of the present invention, a material such as polyimide (PI) used as a photoresist can be replaced with amorphous carbon.

[0031]

[0032] FIG. 1 is a schematic diagram illustrating an amorphous carbon film magnetron sputtering device according to one embodiment of the present invention.

[0033] FIGS. 2 to 4 are reference drawings for explaining a control unit of an amorphous carbon film magnetron sputtering device according to one embodiment of the present invention.

[0034] FIG. 5 is a cross-sectional and surface image of an amorphous carbon film deposited according to Embodiments 1 and 2 and Comparative Examples 1 and 2 of the present invention, taken using an electron microscope.

[0035] Figures 6 and 7 show the results of measuring the surface roughness by area of ​​an amorphous carbon film deposited according to Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention.

[0036] FIGS. 8 and 9 are surface scan images by area of ​​an amorphous carbon film deposited according to Embodiments 1 and 2 and Comparative Examples 1 and 2 of the present invention.

[0037] FIG. 10 shows the results of Tropel (Warp / Bow / SBIR / SFQR / TTV) analysis for amorphous carbon films deposited according to Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention.

[0038] FIG. 11 is a flowchart showing the process sequence of an amorphous carbon film magnetron sputtering method according to one embodiment of the present invention.

[0039] Figure 12 is a flowchart showing the detailed process of step S130 of Figure 11 in order.

[0040]

[0041] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to sufficiently convey the spirit of the present invention to those skilled in the art.

[0042] In this specification, when a component is referred to as being on another component, it means that it can be formed directly on the other component, or a third component may be interposed between them. Furthermore, in the drawings, shapes and sizes are exaggerated for the purpose of effectively explaining the technical contents.

[0043] Additionally, although terms such as first, second, and third have been used to describe various components in various embodiments of this specification, these components should not be limited by these terms. These terms are only used to distinguish one component from another. Thus, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiments. Additionally, the term "and / or" has been used herein to mean including at least one of the components listed before and after.

[0044] In the specification, singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, terms such as "comprise" or "have" are intended to specify the presence of a feature, number, step, component, or combination thereof described in the specification, and should not be construed as excluding the presence or addition of one or more other features, numbers, steps, components, or combinations thereof. In addition, the term "connection" is used in the present specification to mean both indirectly connecting multiple components and directly connecting them.

[0045] Additionally, terms such as “part,” “unit,” and “module” described in the specification mean a unit that processes at least one function or operation, which may be implemented by hardware, software, or a combination of hardware and software.

[0046] In addition, when describing the present invention below, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0047]

[0048] FIG. 1 is a schematic diagram for explaining an amorphous carbon film magnetron sputtering device according to an embodiment of the present invention, and FIGS. 2 to 4 are reference diagrams for explaining a control unit of an amorphous carbon film magnetron sputtering device according to an embodiment of the present invention.

[0049]

[0050] As illustrated in FIG. 1, an amorphous carbon film magnetron sputtering device (100) according to an embodiment of the present invention is a device that forms or deposits an amorphous carbon film (CF) as a deposition film on a deposition target substrate (S) through sputtering.

[0051] At this time, the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention can control the surface roughness (Ra) of the amorphous carbon film (CF) deposited on the deposition target substrate (S).

[0052] For example, an amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention can control the surface roughness (Ra) of an amorphous carbon film (CF) deposited on a deposition target substrate (S) to 4 Å to 8 Å.

[0053] Here, the surface roughness (Ra) of the photoresist (PR) used in the chemical etching process is approximately 16Å to 17Å.

[0054] That is, the amorphous carbon film (CF) deposited on the deposition target substrate (S) through the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the invention may have a surface roughness (Ra) lower than the surface roughness (Ra) of a general photoresist (PR).

[0055] Accordingly, the amorphous carbon deposited on the deposition target substrate (S) through the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention can replace, for example, polyimide (PI) used as a conventional photoresist (PR).

[0056] In this way, when the amorphous carbon film (CF) deposited on the deposition target substrate (S) through the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention is used as a photoresist (PR), the etching quality can be improved compared to when the photoresist (PR) is made of polyimide (PI) due to its high thermal stability and strong resistance to chemicals.

[0057]

[0058] To this end, an amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention can be formed including a chamber (110), a target portion (120), and a control portion (130).

[0059]

[0060] The chamber (110) can provide a space for installing a deposition target substrate (S) and a target portion (120). For this purpose, the chamber (110) can be provided in a roughly hollow hexahedral shape. However, this is merely an example, and the chamber (110) can also be provided in a hollow cylindrical tube shape.

[0061] Here, the deposition target substrate (S) can provide a deposition surface on which particles falling from the target portion (120) during sputtering are deposited. Here, since the target (121) of the target portion (120) described below is made of amorphous carbon, the particles deposited on the deposition target substrate (S) during sputtering can be amorphous carbon particles.

[0062] Accordingly, an amorphous carbon film (CF), which is a deposition made of amorphous carbon, can be formed on the deposition target substrate (S).

[0063] According to one embodiment of the present invention, the amorphous carbon film (CF) formed on the deposition target substrate (S) can be used as a photoresist (PR) in a semiconductor process, for example.

[0064] Accordingly, the deposition target substrate (S) may be provided as a semiconductor wafer whose surface is coated with photoresist (PR), for example, for a photolithography process.

[0065] However, this is only an example, and the deposition target substrate (S) in the present invention is not specifically limited to a semiconductor wafer.

[0066] For example, the deposition target substrate (S) on which the amorphous carbon film (CF) is deposited may include various types of glass, magnetic heads, electronic chips, electronic circuit boards, and similar materials.

[0067] Although not shown, the deposition target substrate (S) may be mounted and supported on a substrate holder. At this time, the substrate holder may be provided to be rotatable or to be moved left and right.

[0068] Meanwhile, the interior of the chamber (110) can be maintained as a vacuum. To this end, a vacuum pump (not shown) for creating a vacuum inside the chamber (110) can be connected to the chamber (110).

[0069] Additionally, a gas inlet (111) through which process gas is introduced may be provided on one side of the chamber (110), and a gas outlet (112) through which process gas is discharged may be provided on the other side.

[0070] Here, an inert gas may be used as the process gas. For example, argon (Ar) gas may be used as the process gas.

[0071]

[0072] According to one embodiment of the present invention, the target portion (120) may include a target (121) and a magnetron (122).

[0073] The above target (121) may be provided in an approximately circular shape. This target (121) may be provided to face the deposition target substrate (S) placed inside the chamber (110). At this time, the target (121) may be provided with a relatively larger area than the deposition target substrate (S).

[0074] According to one embodiment of the present invention, the target (121) may be made of amorphous carbon so that an amorphous carbon film (CF), which is a deposition made of amorphous carbon, is formed on the deposition target substrate (S).

[0075] That is, when sputtering is performed, the amorphous carbon particles forming the target (121) fall off from the target (121) and accumulate on the deposition target substrate (S), forming an amorphous carbon film (CF).

[0076] In more detail, when argon (Ar) gas is filled as a process gas in a chamber (110) maintained in a vacuum atmosphere, and an electric field is formed between the target (121) and the deposition target substrate (S), plasma is generated inside the chamber (110) as the argon (Ar) gas is ionized, and argon (Ar) ions in the plasma are attracted to the active surface of the target (121), that is, the surface of the target (121) facing the deposition target substrate (S), and collide with the surface. By this collision, amorphous carbon particles are separated from the target (121) and then move toward the deposition target substrate (S), and are attached on the deposition target substrate (S) to form an amorphous carbon film (CF), which is a deposition film made of amorphous carbon.

[0077] According to one embodiment of the present invention, the magnetron (122) may be placed at the rear of the target (121). This magnetron (122) may generate a magnetic field across the surface of the target (121) facing the deposition target substrate (S), which is the active surface of the target (121).

[0078] In this way, the magnetic field generated by the magnetron (122) can trap ionized process gas, for example, argon (Ar) ions and electrons, near the surface of the target (121) facing the deposition target substrate (S) for plasma generation.

[0079] Accordingly, the density of plasma can be increased near the surface of the target (121) facing the deposition target substrate (S).

[0080] In this way, the deposition rate can be improved by the plasma density increased by the magnetic field.

[0081] In more detail, the magnetic field generated by the magnetron (122) moves in a closed curve toward the surface of the target (121) facing the deposition target substrate (S), and as electrons move, they receive the Lorentz force and accelerate in a spiral motion.

[0082] For this reason, electrons near the target (121) cannot escape the magnetic field and orbit around it, so the density of electrons in the plasma increases, and accordingly, the electrons collide more with argon (Ar) ions, thereby increasing the deposition rate.

[0083] According to one embodiment of the present invention, such a magnetron (122) may be equipped with a plurality of electromagnets or permanent magnets forming a magnetic array.

[0084] At this time, the magnetron (122) may be provided to be capable of rotational movement around one axis, and through such rotational movement, it may move relative to the target (121).

[0085] For this purpose, the magnetron (122) may be connected to a power transmission means such as a belt or pulley and receive power from a power source.

[0086] Meanwhile, although not shown, the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention may further include a path guider.

[0087] The above path guide can be installed between the deposition target substrate (S) and the target (121). The path guide can guide the emission path of the amorphous carbon particles so that, among the amorphous carbon particles that fall off from the target (121) during sputtering, the amorphous carbon particles that are not directed toward the deposition target substrate (S) are directed toward the deposition target substrate (S).

[0088] Such a path guide may be provided in a tubular shape with openings at the top and bottom. In this case, the path guide may be provided in a form in which the inner diameter gradually decreases toward the bottom. That is, the inner diameter surface of the path guide may be provided to slope downward in a direction toward the deposition target substrate (S).

[0089] Accordingly, the probability that amorphous carbon particles falling from the target (121) will collide with the inner surface of the path guide can be increased. Through this, the amorphous carbon particles are deposited on the deposition target substrate (S) with reduced kinetic energy, thereby alleviating or minimizing the physical impact of the amorphous carbon particles on the deposition target substrate (S).

[0090] In addition, an RF power supply unit may be further provided on one side of the outer peripheral surface of the path guider. The RF power supply unit on one side of the path guider can create a high-density plasma environment so that the plasma density increases near the target surface. Meanwhile, the control unit controls the RF power supply unit as described above, but additionally can further control the RF power supply unit on one side of the outer peripheral surface of the path guider. According to one example, the control unit can activate the RF power supply unit on one side of the outer peripheral surface of the path guider to be OFF in the first ignition mode and the second ignition mode, and to be ON in the deposition mode. Through this, an amorphous carbon film can be uniformly deposited at a high deposition rate.

[0091]

[0092] The above control unit (130) can apply power to the target (121) so that an electric field for plasma generation is formed between the target (121) and the deposition target substrate (S) inside the chamber (110).

[0093] At this time, according to one embodiment of the present invention, the control unit (130) can selectively apply at least one of DC (Direct Current) power and RF (Radio Frequency) power to the target (121) in order to control the surface roughness (Ra) of an amorphous carbon film (CF) deposited on a deposition target substrate (S).

[0094] To this end, the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention may further include an RF power supply unit (141) and a DC power supply unit (142).

[0095] The RF power supply unit (141) can be electrically connected to the target (121). The RF power supply unit (141) can supply RF power to the target (121) according to a power application signal of the control unit (130).

[0096] At this time, the RF power supply unit (141) may be connected to the target (121) through, for example, an RF impedance matcher (not shown).

[0097] The DC power supply unit (142) may also be electrically connected to the target (121). The DC power supply unit (142) may supply DC power to the target (121) according to a power application signal of the control unit (130).

[0098] At this time, the DC power supply unit (142) may be connected to the target (121) through, for example, an RF blocking filter (not shown).

[0099] That is, the control unit (130) can selectively output a power application signal to at least one of the RF power supply unit (141) and the DC power supply unit (142), thereby simultaneously applying DC power and RF power to the target (121) or applying only RF power.

[0100] From another perspective, the control unit (130) can selectively apply DC power while applying RF power.

[0101] Meanwhile, an amorphous carbon film magnetron sputtering device (100) according to an embodiment of the present invention can form an amorphous carbon film (CF) made of amorphous carbon on the deposition target substrate (S) through sequentially switching between a first ignition mode, a second ignition mode, and a deposition mode.

[0102] At this time, among the first ignition mode, the second ignition mode, and the deposition mode, the first ignition mode time can be set to be the shortest, and the deposition mode time can be set to be the longest.

[0103] For example, the first ignition mode time may be set to 3 seconds. Additionally, the second ignition mode time may be set to 5 seconds. And the deposition mode time may be set to 400 seconds.

[0104] However, this is only an example, and it is of course possible to set the time of each mode to various times, such that the first ignition mode time is set to the shortest and the deposition mode time is set to the longest.

[0105] According to one embodiment of the present invention, the control unit (130) can simultaneously apply DC power and RF power to the target (121) in the first ignition mode.

[0106] As illustrated in FIG. 2, in the first ignition mode, the control unit (130) can output a power application signal to both the RF power supply unit (141) and the DC power supply unit (142). Accordingly, in the first ignition mode, the RF power supply unit (141) can supply RF power to the target (121). At the same time, the DC power supply unit (142) can also supply DC power to the target (121).

[0107] At this time, according to one embodiment of the present invention, in the first ignition mode, the control unit (130) can output a power application signal that is relatively larger than the power application signal output to the DC power supply unit (142) to the RF power supply unit (141).

[0108] Accordingly, in the first ignition mode, the RF power applied to the target (121) may be relatively greater than the DC power applied at the same time.

[0109] For example, in the first ignition mode, when 600 W of RF power is applied to the target (121), 500 W of DC power can be applied to the target (121) simultaneously for 3 seconds.

[0110] Additionally, the control unit (130) can only apply RF power to the target (121) in the second ignition mode.

[0111] As illustrated in FIG. 3, in the second ignition mode, the control unit (130) can output a power application signal only to the RF power supply unit (141).

[0112] Accordingly, in the second ignition mode, only the RF power supply unit (141) can be operated to supply RF power to the target (121).

[0113] For example, in the second ignition mode, 600 W of RF power can be applied to the target (121) for 5 seconds, and at this time, the DC power applied to the target (121) can be zero.

[0114] And, the control unit (130) can apply only RF power to the target (121) in the deposition mode, similar to the second ignition mode. At this time, since there is no change in the type and amount of power applied when switching from the second ignition mode to the deposition mode, the second ignition mode and the deposition mode can be distinguished only in terms of process.

[0115] As shown in Fig. 4, in the deposition mode, the control unit (130) can output a power application signal only to the RF power supply unit (141).

[0116] Accordingly, in the deposition mode, only the RF power supply unit (141) can be operated to supply RF power to the target (121).

[0117] For example, in the deposition mode, 600 W of RF power can be applied to the target (121) for 400 seconds, and at this time, the DC power applied to the target (121) can be zero.

[0118] As described above, according to one embodiment of the present invention, DC power may be applied to the target (121) only in the first ignition mode. Furthermore, according to one embodiment of the present invention, RF power may be applied to the target (121) in the same magnitude in all of the first ignition mode, the second ignition mode, and the deposition mode.

[0119] Accordingly, RF power and DC power are simultaneously applied to the target (121) only in the first ignition mode in which sputtering is initially initiated, and only RF power can be applied to the target (121) in the remaining modes. That is, while RF power is applied in all modes, DC power can be selectively applied.

[0120] According to one embodiment of the present invention, plasma is generated by an electric field formed inside the chamber (110) in the first ignition mode and the second ignition mode, and in the deposition mode, amorphous carbon particles forming the target (121) fall off from the target (121) and accumulate on the deposition target substrate (S) to form an amorphous carbon film (CF).

[0121] In this way, the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention can deposit an amorphous carbon film (CF) on a deposition target substrate (S) through a control unit (130) that selectively applies at least one of DC power and RF power to the target (121) for each mode.

[0122] At this time, the amorphous carbon film (CF) deposited on the deposition target substrate (S) may have a surface roughness (Ra) of 4Å to 8Å.

[0123] The surface roughness (Ra) of the photoresist (PR) used in the chemical etching process is approximately 16Å to 17Å, so according to the present invention, the amorphous carbon film (CF) deposited on the deposition target substrate (S) can have a surface roughness (Ra) lower than the surface roughness (Ra) of the photoresist (PR) typically required.

[0124] Accordingly, the amorphous carbon film (CF) can replace materials such as polyimide (PI) that were conventionally used as photoresist (PR).

[0125] In this way, when the amorphous carbon film (CF) deposited on the deposition target substrate (S) through the amorphous carbon film magnetron sputtering device (100) according to one embodiment of the present invention is used as a photoresist (PR) for a chemical etching process, the etching quality can be improved compared to when a photoresist (PR) made of, for example, polyimide (PI) is used due to its high thermal stability and strong resistance to chemicals.

[0126]

[0127] Example 1

[0128] After placing an amorphous carbon target and a magnetron behind the amorphous carbon target in the chamber so that they face the substrate, argon gas was injected into the chamber while maintaining the inside of the chamber under vacuum. In the first ignition mode for sputtering, 600 W of RF power and 500 W of DC power were simultaneously applied to the amorphous carbon target for 3 seconds, in the second ignition mode, only 600 W of RF power was applied to the amorphous carbon target for 5 seconds, and in the deposition mode, only 600 W of RF power was applied to the amorphous carbon target for 400 seconds to perform sputtering.

[0129] As a result of sputtering, an amorphous carbon film was deposited on the substrate, and the deposition thickness was measured to be 2780 Å.

[0130]

[0131] Example 2

[0132] In the same manner as in Example 1, in the first ignition mode for sputtering, RF power of 800 W and DC power of 500 W were simultaneously applied to the amorphous carbon target for 3 seconds, in the second ignition mode, only RF power of 800 W was applied to the amorphous carbon target for 5 seconds, and in the deposition mode, only RF power of 800 W was applied to the amorphous carbon target for 400 seconds to perform sputtering.

[0133] As a result of sputtering, an amorphous carbon film was deposited on the substrate, and the deposition thickness was measured to be 3630 Å.

[0134]

[0135] Comparative Example 1

[0136] In the same manner as in Example 1, in the first ignition mode for sputtering, only 1500 W of DC power was applied to the amorphous carbon target for 3 seconds, in the second ignition mode, 300 W of RF power and 1500 W of DC power were simultaneously applied to the amorphous carbon target for 5 seconds, and in the deposition mode, 300 W of RF power and 1500 W of DC power were simultaneously applied to the amorphous carbon target for 400 seconds to perform sputtering.

[0137] As a result of sputtering, an amorphous carbon film was deposited on the substrate, and the deposition thickness was measured to be 1870 Å.

[0138]

[0139] Comparative Example 2

[0140] In the same manner as in Example 1, in the first ignition mode for sputtering, RF power of 800 W and DC power of 500 W were simultaneously applied to the amorphous carbon target for 3 seconds, in the second ignition mode, RF power of 800 W and DC power of 1000 W were simultaneously applied to the amorphous carbon target for 5 seconds, and in the deposition mode, RF power of 800 W and DC power of 1000 W were simultaneously applied to the amorphous carbon target for 400 seconds to perform sputtering.

[0141] As a result of sputtering, an amorphous carbon film was deposited on the substrate, and the deposition thickness was measured to be 3960 Å.

[0142] The RF power and DC power applied to the amorphous carbon target for each mode of Examples 1 and 2 and Comparative Examples 1 and 2 are shown in Table 1 below.

[0143]

[0144] Remarks Ignition mode 1 Ignition mode 2 Deposition mode Comparison Example 1 RF power (W) 0 300 300 DC power (W) 1 500 1 500 1 500 Time (sec) 3 5 400 Implementation Example 1 RF power (W) 6 00 600 600 DC power (W) 50 000 Time (sec) 3 5 400 Implementation Example 2 RF power (W) 8 00 800 800 DC power (W) 50 000 Time (sec) 3 5 400 Comparison Example 2 RF power (W) 8 00 800 800 DC power (W) 50 1000 1000 Time (sec) 3 5 400

[0145] FIG. 5 is a cross-sectional and surface image of an amorphous carbon film deposited according to Embodiments 1 and 2 and Comparative Examples 1 and 2 of the present invention, taken using an electron microscope.

[0146] Referring to Fig. 5, it was confirmed that the thickness of the amorphous carbon film deposited according to Example 2 and Comparative Example 2, which had the largest amount of applied RF power, was the thickest. At this time, looking at Example 2 and Comparative Example 2, under the condition that the amount of applied RF power is the same, the thickness of the amorphous carbon film deposited according to Comparative Example 2, which had a relatively large amount of applied DC power, was confirmed to be thicker than the thickness of the amorphous carbon film deposited according to Example 2, but the rate of increase in thickness due to the amount of applied DC power was confirmed to be not large.

[0147] That is, it was confirmed that the deposition thickness of the amorphous carbon film was affected more by RF power than by DC power.

[0148] In addition, FIGS. 6 and 7 are results of measuring the surface roughness by area of ​​the amorphous carbon film deposited according to Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention, and FIGS. 8 and 9 are surface scan images by area of ​​the amorphous carbon film deposited according to Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention.

[0149] Referring to FIGS. 6 to 9, it was confirmed that the surface roughness (Ra) of the amorphous carbon film deposited according to Example 1 was the lowest.

[0150] At this time, it was confirmed that the surface roughness (Ra) of the amorphous carbon film deposited according to Example 1 decreased as the area of ​​the amorphous carbon film became narrower, that is, as the surface roughness measurement area became narrower.

[0151] The surface roughness (Ra) of the amorphous carbon film deposited according to Example 1 was measured to be 4 Å to 8 Å based on an area of ​​1 µm to 10 µm × 1 µm to 10 µm.

[0152] In addition, FIG. 10 shows the results of Tropel (Warp / Bow / SBIR / SFQR / TTV) analysis for amorphous carbon films deposited according to Examples 1 and 2 and Comparative Examples 1 and 2 of the present invention.

[0153] Referring to Fig. 10, it was analyzed that the amorphous carbon film deposited according to Example 1 had the best flatness and the smallest thickness deviation by region.

[0154]

[0155] Hereinafter, an amorphous carbon film magnetron sputtering method according to an embodiment of the present invention will be described with reference to FIGS. 11 and 12. At this time, the drawing symbols of each component refer to FIG. 1.

[0156]

[0157] FIG. 11 is a flowchart showing the process sequence of an amorphous carbon film magnetron sputtering method according to one embodiment of the present invention, and FIG. 12 is a flowchart showing the detailed process of step S130 of FIG. 11 in order.

[0158]

[0159] Referring to FIG. 11, an amorphous carbon film magnetron sputtering method according to an embodiment of the present invention may include steps S110, S120, and S130.

[0160]

[0161] S110 stage

[0162] The above step S110 is a step of installing a target (121) and a magnetron (122) made of amorphous carbon inside a chamber (110).

[0163] To this end, in the step S110, a target (121) can be installed facing a deposition target substrate (S) supported by a substrate holder (not shown) inside the chamber (110). At this time, in the step S110, a target (121) having a relatively larger area than the deposition target substrate (S) can be prepared and installed facing the deposition target substrate (S).

[0164] Additionally, in the above step S110, a magnetron (122) can be installed behind a target (121) that is installed facing the deposition target substrate (S). Through this, a magnetic field can be generated near the surface of the target (121) facing the deposition target substrate (S).

[0165] In this way, the magnetic field generated by the magnetron (122) can trap ionized process gas, for example, argon (Ar) ions and electrons, near the surface of the target (121) facing the deposition target substrate (S) for plasma generation.

[0166] Accordingly, the density of plasma can be increased near the surface of the target (121) facing the deposition target substrate (S).

[0167] In this way, the deposition rate can be improved by the plasma density increased by the magnetic field.

[0168]

[0169] S120 stage

[0170] The above step S120 is a step of supplying process gas into the chamber (110). According to one embodiment of the present invention, in the step S120, a vacuum pump (not shown) may first be operated to create a vacuum atmosphere inside the chamber (110).

[0171] Next, in the above step S120, process gas can be supplied to the interior of the chamber (110) through a gas inlet (111) provided on one side of the chamber (110).

[0172] For example, in the above step S120, argon (Ar) gas can be supplied internally to the chamber (110) as the process gas.

[0173]

[0174] Step S130

[0175] The above step S130 is a step of generating plasma by causing a discharge between the target (121) and the deposition target substrate (S), and thereby forming an amorphous carbon film (CF), which is a deposition film made of amorphous carbon, a material forming the target (121), on the deposition target substrate (S).

[0176] At this time, according to one embodiment of the present invention, in the step S130, at least one of DC power and RF power can be selectively applied to the target (121).

[0177] Referring to FIG. 12, the step S130 may include a first ignition process (S131), a second ignition process (S132), and a deposition process (S133).

[0178] First, in the first ignition process (S131), DC power and RF power can be applied simultaneously to the target (121).

[0179] At this time, the RF power applied to the target (121) may be relatively greater than the DC power applied at the same time.

[0180] For example, in the first ignition process (S131), when 600 W of RF power is applied to the target (121), 500 W of DC power can be applied to the target (121) simultaneously for 3 seconds.

[0181] Next, in the second ignition process (S132), only RF power can be applied to the target (121).

[0182] For example, in the second ignition process (S131), RF power of 600 W can be applied to the target (121) for 5 seconds, and at this time, the DC power applied to the target (121) can be zero.

[0183] Lastly, in the deposition process (S133), as in the second ignition process (S132), only RF power can be applied to the target (121).

[0184] For example, in the above deposition process (S133), 600 W of RF power can be applied to the target (121) for 400 seconds, and at this time, the DC power applied to the target (121) can be zero.

[0185] When the above deposition process (S133) is completed, an amorphous carbon film (CF) having a surface roughness (Ra) of 4Å to 8Å, which can be used as a photoresist (PR) for a chemical etching process, can be formed on the deposition target substrate (S).

[0186]

[0187] While the present invention has been described in detail using preferred embodiments, the scope of the present invention is not limited to the specific embodiments described above, and should be interpreted in accordance with the appended claims. Furthermore, those skilled in the art will appreciate that numerous modifications and variations are possible without departing from the scope of the present invention.

Claims

1. A chamber having a vacuum inside and a gas inlet for introducing process gas and a gas outlet for discharging the process gas; A target section including a target made of amorphous carbon and a magnetron disposed at the rear of the target, the target section being arranged to face the deposition target substrate placed inside the chamber; and A control unit selectively applying at least one of DC power and RF power to the target; A deposition film made of the amorphous carbon is formed on the deposition target substrate through the first ignition mode, the second ignition mode, and the deposition mode that are sequentially switched. An amorphous carbon film magnetron sputtering device, wherein the control unit simultaneously applies DC power and RF power to the target in the first ignition mode, and applies only RF power to the target in the second ignition mode and deposition mode.

2. In paragraph 1, An amorphous carbon film magnetron sputtering device, wherein among the first ignition mode, the second ignition mode and the deposition mode, the first ignition mode time is the shortest and the deposition mode time is the longest.

3. In paragraph 1, In the first ignition mode, the RF power applied to the target is relatively greater than the DC power applied to the target, An amorphous carbon film magnetron sputtering device, wherein the magnitude of RF power applied to the target is all the same in the first ignition mode, the second ignition mode, and the deposition mode.

4. In paragraph 1, An amorphous carbon film magnetron sputtering device having a surface roughness (Ra) of the above-mentioned deposition film of 4Å to 8Å.

5. In paragraph 4, An amorphous carbon film magnetron sputtering device, wherein the surface roughness (Ra) decreases as the area of ​​the deposited film becomes narrower.

6. Deposited on a substrate to be deposited using a magnetron sputtering device according to Article 1, Amorphous carbon film for photoresist having a surface roughness (Ra) of 4Å to 8Å.

7. A step of installing a target made of amorphous carbon and a magnetron positioned behind the target, facing the deposition target substrate, inside the chamber; A step of supplying process gas into the chamber; and A step of selectively applying at least one of DC power and RF power to the target; comprising: The step of selectively applying at least one power is: A first ignition process in which DC power and RF power are simultaneously applied to the above target, After the first ignition process, a second ignition process of applying only RF power to the target, and An amorphous carbon film magnetron sputtering method, comprising a deposition process in which only RF power is continuously applied to the target after the second ignition process.

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