Plasma processing device and plasma processing method

Abstract

This plasma processing device includes: a chamber; a substrate support part in the chamber; a first gas introduction part configured to supply a first processing gas to the chamber; a second gas introduction part configured to supply a second processing gas to the chamber; and a control part. The control unit is configured to (a) provide a substrate including a silicon-containing film on a substrate support part, (b) generate plasma from the first processing gas supplied to the chamber from the first gas introduction part to form a film on a bevel part of the substrate, and (c) generate plasma from the second processing gas supplied to the chamber from the second gas introduction part to etch the silicon-containing film.

Description

Plasma processing apparatus and plasma processing method

[0001] SUMMARY OF THE INVENTION Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma processing method.

[0002] Japanese Patent Application Laid-Open No. 2003-124222 discloses a technique for removing deposits around a wafer.

[0003] JP 2013-115269 A

[0004] The present disclosure provides techniques for suppressing particles in a chamber.

[0005] In one exemplary embodiment of the present disclosure, there is provided a plasma processing apparatus including: a chamber; a substrate support within the chamber; a first gas inlet configured to supply a first process gas to the chamber; a second gas inlet configured to supply a second process gas to the chamber; and a controller, wherein the controller is configured to: (a) provide a substrate including a silicon-containing film on the substrate support; (b) generate plasma from the first process gas supplied to the chamber from the first gas inlet to form a film on a bevel portion of the substrate; and (c) generate plasma from the second process gas supplied to the chamber from the second gas inlet to etch the silicon-containing film.

[0006] According to one exemplary embodiment of the present disclosure, a technique for suppressing particles in a chamber can be provided.

[0007] FIG. 4 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 4 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 5 is a diagram showing an example of a first gas introduction section and a second gas introduction section. FIG. 6 is a diagram showing the bottom surface of the shower head 13 shown in FIG. 3. FIG. 7 is a flowchart showing an example of a method MT. FIG. 8 is a diagram showing an example of a cross-sectional structure of a substrate W. FIG. 9 is a diagram showing an example of a bevel portion of a substrate W before processing in process ST12. FIG. 10 is a diagram showing an example of a bevel portion of a substrate W after processing in process ST12. FIG. 11 is a diagram showing an example of a cross-sectional structure of a substrate W during processing in process ST13. FIG. 12 is a diagram showing an example of a bevel portion of a substrate W after processing in process ST13. A flowchart showing another example of the method MT. A flowchart showing another example of the method MT.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a plasma processing apparatus is provided, the plasma processing apparatus comprising: a chamber; a substrate support within the chamber; a first gas inlet configured to supply a first process gas to the chamber; a second gas inlet configured to supply a second process gas to the chamber; and a controller, wherein the controller is configured to: (a) provide a substrate on the substrate support, the substrate including a silicon-containing film; (b) generate a plasma from the first process gas supplied to the chamber from the first gas inlet to form a film on a bevel portion of the substrate; and (c) generate a plasma from the second process gas supplied to the chamber from the second gas inlet to etch the silicon-containing film.

[0010] In one exemplary embodiment, the first process gas comprises a CF-based gas.

[0011] In one exemplary embodiment, the CF based gas is ４ F ８ Gas, C ４ F ６ Gas, C ３ F ８ Gas, C ３ F ６ Gas and CF ４ The gas contains at least one gas selected from the group consisting of:

[0012] In one exemplary embodiment, the second process gas comprises a CHF-based gas.

[0013] In one exemplary embodiment, the CHF-based gas is ４ H ２ F ６ Gas, C ３ H ２ F ４ Gas and CH ２ F ２ The gas contains at least one gas selected from the group consisting of:

[0014] In one exemplary embodiment, the first gas inlet is positioned radially outward of the second gas inlet.

[0015] In one exemplary embodiment, the first gas inlet is positioned to surround the second gas inlet.

[0016] In one exemplary embodiment, the apparatus further includes a shower head disposed opposite the substrate support and having a plurality of gas supply holes extending from a central region to an outer periphery of the shower head, wherein the first gas inlet is provided in the outer periphery of the shower head and the second gas inlet is provided in the central region of the shower head.

[0017] In one exemplary embodiment, the chamber further includes a showerhead disposed opposite the substrate support and having a plurality of gas supply holes, wherein the first gas inlet is provided in a sidewall of the chamber and the second gas inlet is provided in the showerhead.

[0018] In one exemplary embodiment, after (b) is performed, (c) is performed.

[0019] In one exemplary embodiment, (b) and (c) are performed simultaneously.

[0020] In one exemplary embodiment, (b) and (c) are performed simultaneously, followed by (c).

[0021] In one exemplary embodiment, the second process gas further comprises hydrogen fluoride gas.

[0022] In one exemplary embodiment, the second process gas further comprises at least one gas selected from the group consisting of a phosphorus-containing gas, a halogen-containing gas other than fluorine, a metal-containing gas, an oxygen-containing gas, and an inert gas.

[0023] In one exemplary embodiment, a plasma processing method is provided that includes: (a) providing a substrate including a silicon-containing film on a substrate support in a chamber; (b) generating a plasma from a first process gas supplied to the chamber through a first gas inlet to form a film on a bevel portion of the substrate; and (c) generating a plasma from a second process gas supplied to the chamber through a second gas inlet to etch the silicon-containing film.

[0024] In one exemplary embodiment, the first process gas comprises a CF-based gas.

[0025] In one exemplary embodiment, the second process gas comprises a CHF-based gas.

[0026] In one exemplary embodiment, after (b) is performed, (c) is performed.

[0027] In one exemplary embodiment, (b) and (c) are performed simultaneously.

[0028] In one exemplary embodiment, (b) and (c) are performed simultaneously, followed by (c).

[0029] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0030] <Configuration Example of Plasma Processing System> FIG. 1 is a diagram illustrating a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0031] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0032] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0033] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0034] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0035] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0036] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0037] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0038] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0039] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0040] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0041] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0042] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0043] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0044] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0045] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0046] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] <Example of Gas Introduction Unit> In one embodiment, the gas introduction unit of the plasma processing apparatus 1 includes a first gas introduction unit and a second gas introduction unit. The first gas introduction unit is configured to supply a first process gas into the chamber 10. The second gas introduction unit is configured to supply a second process gas into the chamber 10. In one embodiment, the first gas introduction unit is disposed radially outward of the second gas introduction unit. In one embodiment, the first gas introduction unit is disposed to surround the second gas introduction unit.

[0048] In one embodiment, the first gas inlet and the second gas inlet are both provided in the shower head 13. In one embodiment, the first gas inlet may be provided in the outer periphery of the shower head 13, and the second gas inlet may be provided in the central region of the shower head 13.

[0049] In one embodiment, the second gas inlet is provided in the showerhead 13, and the first gas inlet is provided at a location different from the showerhead 13. For example, the first gas inlet may be one or more side gas injectors attached to one or more openings formed in the sidewall 10 a.

[0050] FIG. 3 is a diagram showing an example of a first gas introduction section and a second gas introduction section. FIG. 4 is a diagram showing a bottom surface of the shower head 13 shown in FIG. 3. As shown in FIGS. 3 and 4, the shower head 13 includes an outer circumferential region 13A and a central region 13B. The central region 13B is a region extending radially outward from the center of the shower head 13. The central region 13B may include a portion facing the central region 111a (see FIG. 2) of the substrate support 11. The outer circumferential region 13A is a region extending radially outward from the central region 13B so as to surround the central region 13B. The outer circumferential region 13A may include a portion facing the outer edge of the substrate W placed on the substrate support 11 and / or the ring assembly 112 (see FIG. 2).

[0051] 3 and 4 , in one embodiment, a first gas inlet may be provided in the outer peripheral region 13A of the shower head 13, and a second gas inlet may be provided in the central region 13B. The shower head 13 includes a first gas supply port 131a, a first gas diffusion chamber 131b, and a plurality of first gas inlets 131c as the first gas inlet in the outer peripheral region 13A. The shower head 13 also includes a second gas supply port 132a, a second gas diffusion chamber 132b, and a plurality of second gas inlets 132c as the second gas inlet in the central region 13B. The first gas diffusion chamber 131b and the second gas diffusion chamber 132b are separated from each other by an annular partition member 134. In one example, the annular partition member 134 is an O-ring.

[0052] In one embodiment, the gas supply 20 comprises a first gas supply 20A configured to supply a first process gas and a second gas supply 20B configured to supply a second process gas. In one embodiment, the gas supply 20 may further include at least one flow modulation device to modulate or pulse the flow rate of the first process gas and / or the second process gas.

[0053] In one embodiment, the first gas supply unit 20A includes one or more gas sources 21A containing gases constituting a first process gas and one or more corresponding flow controllers 22A. The first gas supply unit 20A is connected to a first gas supply port 131a of the first gas inlet. The first process gas supplied from the first gas supply unit 20A to the first gas supply port 131a passes through a first gas diffusion chamber 131b and is introduced into the plasma processing space 10s from multiple first gas inlets 131c. As shown in FIG. 4 , the multiple first gas inlets 131c arranged in the outer peripheral region 13A of the shower head 13 are positioned radially outward of the multiple second gas inlets 132c arranged in the central region 13B. This allows the first process gas to be introduced into the plasma processing space 10s from a position radially outward of the second process gas. In one embodiment, the first process gas is selectively supplied to the outer edge (bevel) of a substrate W placed on the substrate support 11.

[0054] In one embodiment, the second gas supply unit 20B includes one or more gas sources 21B containing gases constituting the second process gas and one or more corresponding flow controllers 22B. The second gas supply unit 20B is connected to the second gas supply port 132a of the second gas inlet unit. The second process gas supplied from the second gas supply unit 20B to the second gas supply port 132a passes through the second gas diffusion chamber 132b and is introduced into the plasma processing space 10s from the multiple second gas inlets 132c. As shown in FIG. 4 , the multiple second gas inlets 132c arranged in the central region 13B of the showerhead 13 are positioned radially inward of the multiple first gas inlets 131c arranged in the outer peripheral region 13A. As a result, the second process gas is introduced into the plasma processing space 10s from a position radially inward of the first process gas.

[0055] <Example of Plasma Processing Method> Figure 5 is a flowchart showing an example of a plasma processing method (hereinafter also referred to as "method MT") according to one illustrative embodiment. As shown in Figure 5, method MT includes step ST11 of providing a substrate, step ST12 of forming a film on a bevel portion of the substrate, and step ST13 of etching the substrate. The processing in each step may be performed by the plasma processing apparatus 1 shown in Figures 1 to 3. Below, an example will be described in which the control unit 2 controls each part of the plasma processing apparatus 1 to perform method MT on a substrate W.

[0056] (Process ST11: Providing a Substrate) In process ST11, a substrate W is provided to a plasma processing chamber 10 (hereinafter also referred to as "chamber 10"). The substrate W is carried into the chamber 10 by a transport arm, placed on a substrate support 11 by a lifter, and held by suction on the substrate support 11 as shown in FIG. 2 .

[0057] 6 is a diagram showing an example of the cross-sectional structure of a substrate W. The substrate W includes a silicon-containing film SF and a mask MK disposed on the silicon-containing film SF. The silicon-containing film SF may be formed on an undercoat film UF. The substrate W may be used in the manufacture of semiconductor devices. Semiconductor devices include, for example, memory devices such as DRAMs and 3D-NAND flash memories, and logic devices.

[0058] The base film UF is, for example, a silicon wafer, an organic film formed on a silicon wafer, a dielectric film, a metal film, a semiconductor film, etc. The base film UF may be configured by stacking a plurality of films.

[0059] The silicon-containing film SF is a film to be etched by the method MT. In one embodiment, the silicon-containing film SF may be formed by stacking at least two or more types of films selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a polycrystalline silicon film, and a carbon-containing silicon film. For example, the silicon-containing film SF may be formed by alternately stacking silicon oxide films and silicon nitride films. For example, the silicon-containing film SF may be formed by alternately stacking silicon oxide films and polycrystalline silicon films. For example, the silicon-containing film SF may be a stacked film including a silicon nitride film, a silicon oxide film, and a polycrystalline silicon film. For example, the silicon-containing film SF may be formed by stacking a silicon oxide film and a silicon carbonitride film. For example, the silicon-containing film SF may be a stacked film including a silicon oxide film, a silicon nitride film, and a silicon carbonitride film. In one embodiment, at least a portion of the silicon-containing film SF may be doped with an element such as phosphorus, boron, or nitrogen.

[0060] The mask MK may be made of a material having an etching rate with respect to the plasma generated in step ST13 lower than that of the silicon-containing film SF. The mask MK may be a single-layer mask made of one type of film, or may be a multi-layer mask made of two or more films.

[0061] In one embodiment, the mask MK includes a metal-containing film. In one embodiment, the metal-containing film includes at least one metal (hereinafter also referred to as "metal M") selected from the group consisting of tungsten, molybdenum, ruthenium, and titanium. In one embodiment, the metal-containing film includes the metal M and at least one element selected from the group consisting of silicon, carbon, nitrogen, oxygen, boron, hydrogen, and phosphorus. For example, the metal-containing film may be at least one selected from the group consisting of tungsten carbide (WC), tungsten silicide (WSi), WSiN, and WSiC.

[0062] In one embodiment, the mask MK includes a carbon-containing film. In one embodiment, the carbon-containing film is an amorphous carbon film, a spin-on carbon (SOC) film, or a photoresist film. The amorphous carbon (ACL) film may be doped with an element such as boron, and may be, for example, a boron-containing amorphous carbon film (B-doped ACL), an arsenic-containing amorphous carbon film (As-doped ACL), a tungsten-containing amorphous carbon film (W-doped ACL), or a xenon-containing amorphous carbon film (Xe-doped ACL).

[0063] 6, the mask MK defines at least one opening OP on the silicon-containing film SF. The opening OP is a space above the silicon-containing film SF and is surrounded by the sidewall of the mask MK. That is, the upper surface of the silicon-containing film SF has a region covered by the mask MK and a region exposed at the bottom of the opening OP.

[0064] The openings OP may have any shape when viewed from above the substrate W, i.e., when the substrate W is viewed from top to bottom in FIG. 6 . The shape may be, for example, a circle, an ellipse, a rectangle, a line, or a combination of one or more of these. The mask MK may have multiple side walls that define multiple openings OP. This allows the mask MK to have an opening pattern. For example, the mask MK may form a line-and-space pattern by arranging multiple openings OP with intervals in a plan view. Furthermore, for example, the mask MK may form an array pattern by arranging multiple circular openings OP in a dot pattern.

[0065] The base film UF, silicon-containing film SF, and mask MK may each be formed by any method. For example, the base film UF, silicon-containing film SF, and mask MK may be formed by a CVD method, an ALD method, a PVD method, a spin coating method, or the like. The mask MK may be formed by, for example, lithography. The opening OP in the mask MK may be formed by etching the mask MK. The base film UF, silicon-containing film SF, and mask MK may each be a flat film or a film having an uneven surface. The substrate W may further include another film below the base film UF. In this case, recesses having shapes corresponding to the openings OP may be formed in the silicon-containing film SF and base film UF and used as masks for etching the other film.

[0066] At least a part of the process of forming the base film UF, the silicon-containing film SF, and the mask MK of the substrate W may be performed in the chamber 10 as part of step ST11. When the opening OP in the mask MK is formed by etching, the treatment in step ST12 may be performed before the etching in step ST11. That is, the opening OP in the mask MK may be formed by etching after a film is formed on the bevel portion of the substrate W. In one embodiment, the substrate W may be provided in the chamber 10 after all or part of the substrate W is formed in an apparatus or chamber external to the plasma processing apparatus 1.

[0067] In one embodiment, after the substrate W is provided in the central region 111a of the substrate support 11, the substrate support 11 is controlled to a set temperature by a temperature control module. In one example, controlling the temperature of the substrate support 11 to a set temperature includes setting the temperature of the heat transfer fluid flowing through the flow path 1110a or the heater temperature to the set temperature, or to a temperature different from the set temperature. Note that the timing at which the heat transfer fluid starts to flow through the flow path 1110a may be before or after the substrate W is placed on the substrate support 11, or may be simultaneous with the placement of the substrate W on the substrate support 11. Furthermore, the temperature of the substrate support 11 may be controlled to the set temperature before process ST11. That is, the substrate W may be provided to the substrate support 11 after the temperature of the substrate support 11 is controlled to the set temperature.

[0068] In one embodiment, the substrate W may be controlled to a set temperature instead of controlling the substrate support 11 to a set temperature. Controlling the temperature of the substrate W to a set temperature includes setting the temperature of the substrate support 11, the heat transfer fluid flowing through the flow path 1110a, and / or the heater temperature to the set temperature or to a temperature different from the set temperature.

[0069] (Process ST12: Forming a film on the bevel portion of the substrate) In process ST12, a film is formed on the bevel portion of the substrate W using plasma generated from a first process gas. Process ST12 includes supplying the first process gas to the chamber 10 and generating plasma from the first process gas.

[0070] 7 is a diagram showing an example of a bevel portion of a substrate W before processing in step ST12. As shown in Fig. 7, the substrate W has a main surface WF, a back surface WB, and a bevel portion WE. The main surface WF is the surface on which the silicon-containing film SF, the mask film MK, etc. (see Fig. 6) are formed. The back surface WB is the surface opposite to the main surface WF. The bevel portion WE is a portion that is continuous with the main surface WF and the back surface WB and forms the outer edge of the substrate W.

[0071] The bevel portion WE may have an end WE1 that is continuous with the main surface WF and has an inclination of less than 90 degrees relative to the main surface WF in a cross-sectional view, and an end WE2 that is continuous with the back surface WB and has an inclination of less than 90 degrees relative to the back surface WB. The end WE1 and the end WE2 may be curved or tapered. The end WE1 may be formed by forming some film (e.g., an undercoat film UF, a silicon-containing film SF, and / or a mask MK) on the silicon wafer. That is, the silicon wafer may not be exposed at the end WE1. The end WE2 may be formed by forming no film on the silicon wafer. That is, the silicon wafer may be exposed at the end WE2. In one embodiment, when the substrate W is placed on the main body 111 of the substrate support 11, a gap gp exists between the bevel portion WE of the substrate W and the ring assembly 112.

[0072] In step ST12, a first process gas is supplied into the chamber 10 from the first gas inlet. Specifically, the first process gas is supplied from the first gas supply unit 20A to the first gas supply port 131a (see FIG. 3). The first process gas passes through the first gas diffusion chamber 131b and is introduced into the plasma processing space 10s from the plurality of first gas inlets 131c. The plurality of first gas inlets 131c are gas inlets arranged in the outer peripheral region 13A of the shower head 13 (see FIGS. 3 and 4). The first process gas is supplied onto at least the bevel portion WE of the substrate W.

[0073] The first process gas is a gas for forming a film on the bevel portion WE of the substrate W. In one embodiment, the first process gas is a carbon-containing gas that does not contain hydrogen. In one embodiment, the first process gas is a CF-based gas (fluorocarbon gas). The CF-based gas is, for example, CF ４ Gas, C ２ F ２ Gas, C ２ F ４ Gas, C ３ F ６ Gas, C ３ F ８ Gas, C ４ F ６ Gas, C ４ F ８ Gas and C ５ F ８ The gas may be at least one selected from the group consisting of gases.

[0074] In step ST12, plasma is generated from the first process gas in the chamber 10. For example, a source RF signal is supplied to the lower electrode of the substrate support 11 and / or the upper electrode of the shower head 13. At this time, a bias signal may or may not be supplied to the lower electrode of the substrate support 11. When a high-frequency electric field is generated between the shower head 13 and the substrate support 11, plasma is generated from the first process gas in the chamber 10. As described above, the first process gas may be supplied in a larger amount onto the bevel portion WE of the substrate W than onto the central region of the substrate W. The density of the plasma generated from the first process gas may be greater on the bevel portion WE of the substrate W than on the central region of the substrate W. Some of the activated species dissociated from the first process gas are deposited on the bevel portion WE of the substrate W, forming a film on the bevel portion WE. As shown in Figure 7, if a gap gp exists between the bevel portion WE of the substrate W and the ring assembly 112, some of the active species that have detached from the first processing gas may flow through the gap gp to the back surface WB side of the substrate and form a film on the back surface WB side of the substrate W.

[0075] 8 is a diagram showing an example of the bevel portion of the substrate W after processing in step ST12. In the example shown in FIG. 8, a film CF is formed on the end WE2 (rear surface side) of the bevel portion WE. When the first processing gas is a carbon-containing gas, the film CF is a carbon-containing film. When the first processing gas is a CF-based gas, adhesion between the film CF and the substrate W is increased, and the film CF tends to be less likely to peel off from the substrate W during the etching processing in step ST13. In one embodiment, the film CF may be formed on both the end WE1 (main surface side) and the end WE2 (rear surface side) of the bevel portion WE. In another embodiment, the film CF may or may not be formed on a part of the main surface WF of the substrate W.

[0076] (Process ST13: Etching of Substrate) In process ST13, the substrate W is etched using plasma generated from the second process gas. Process ST13 includes supplying the second process gas to the chamber 10 and generating plasma from the second process gas.

[0077] In step ST13, a second process gas is supplied into the chamber 10 from the second gas inlet. Specifically, the second process gas is supplied from the second gas supply unit 20B to the second gas supply port 132a (see FIG. 3). The second process gas passes through the second gas diffusion chamber 132b and is introduced into the plasma processing space 10s from the multiple second gas inlets 132c. The multiple second gas inlets 132c are gas inlets located in the central region 13B of the shower head 13 (see FIGS. 3 and 4). The second process gas is supplied onto at least the central region of the substrate W.

[0078] In one embodiment, the second process gas includes hydrogen fluoride (HF) gas. The HF gas may have the highest flow rate (partial pressure) of all components of the second process gas, excluding the inert gas. In one example, the flow rate of the HF gas may be 50 vol.% or more, 60 vol.% or more, 70 vol.% or more, 80 vol.% or more, 90 vol.% or more, or 95 vol.% or more of the total flow rate of the second process gas (if the second process gas includes an inert gas, the flow rate of all gases excluding the inert gas; the same applies hereinafter in this specification). The flow rate of the HF gas may be less than 100 vol.%, 99.5 vol.% or less, 98 vol.% or less, or 96 vol.% or less of the total flow rate of the second process gas. In one example, the flow rate of the HF gas is 70 vol.% or more and 96 vol.% or less of the total flow rate of the second process gas.

[0079] In one embodiment, the second process gas may further include a phosphorus-containing gas. The phosphorus-containing gas may be, for example, a halogenated phosphorus gas. The halogenated phosphorus gas may be PF5. ３ Gas, PF ５ Gas, PCl ３ Gas, PCl ５ Gas, PClF ２ Gas, PCl ２ F gas and PCl ２ F ３ In one example, the halogenated phosphorus gas may be at least one selected from the group consisting of PF ３ Gas, PF ５ Gas or PCl ３ It's gas.

[0080] In one embodiment, the second process gas may further include a carbon-containing gas. The carbon-containing gas may be, for example, one or both of a CF-based gas (fluorocarbon gas) and a CHF-based gas (hydrofluorocarbon gas). In one example, the CF-based gas is CF ４ Gas, C ２ F ２ Gas, C ２ F ４ Gas, C ３ F ６ Gas, C ３ F ８ Gas, C ４ F ６ Gas, C ４ F ８ Gas and C ５ F ８ In one example, the CHF-based gas may be at least one selected from the group consisting of CHF ３ Gas, CH ２ F ２ Gas, CH ３ F gas, C ２ HF ５ Gas, C ２ H ２ F ４ Gas, C ２ H ３ F ３ Gas, C ２ H ４ F ２ Gas, C ３ HF ７ Gas, C ３ H ２ F ２ Gas, C ３ H ２ F ４ Gas, C ３ H ２ F ６ Gas, C ３ H ３ F ５ Gas, C ４ H ２ F ６ Gas, C ４ H ５ F ５ Gas, C ４ H ２ F ８ Gas, C ５ H ２ F６ Gas, C ５ H ２ F １０ Gas and C ５ H ３ F ７ The carbon-containing gas may be at least one selected from the group consisting of carbon-containing gases. The carbon-containing gas may be a linear gas having an unsaturated bond. The linear carbon-containing gas having an unsaturated bond may be, for example, C ３ F ６ (Hexafluoropropene) gas, C ４ F ８ (Octafluoro-1-butene, octafluoro-2-butene) gas, C ３ H ２ F ４ (1,3,3,3-tetrafluoropropene) gas, C ４ H ２ F ６ (trans-1,1,1,4,4,4-hexafluoro-2-butene) gas, C ４ F ８ O (pentafluoroethyl trifluorovinyl ether) gas, CF ３ COF gas (1,2,2,2-tetrafluoroethane-1-one), CHF ２ COF (difluoroacetic acid fluoride) gas and COF ２ (carbonyl fluoride) gas.

[0081] In one embodiment, the second process gas may further comprise a metal-containing gas. The metal-containing gas may comprise at least one metal selected from the group consisting of tungsten, titanium, ruthenium, and molybdenum. In one embodiment, the metal-containing gas may further comprise a halogen. The metal-containing gas may be WF ２ Gas, WF ４ Gas, WF ５ Gas, WF ６ Gas, WCl ２ Gas, WCl ４ Gas, WCl ５ Gas, WCl ６ Gas, MoF ４ Gas, MoF ６ Gas, MoCl ６ Gas, TiCl４ In one embodiment, the flow rate of the metal-containing gas may be 5% by volume or less of the total flow rate of the second process gas.

[0082] In one embodiment, the second process gas may further include a halogen-containing gas other than fluorine. The halogen-containing gas other than fluorine may be, for example, a chlorine-containing gas, a bromine-containing gas, and / or an iodine-containing gas. In one example, the chlorine-containing gas may be Cl. ２ , SiCl ２ , SiCl ４ , CCl ４ , SiH ２ Cl ２ , Si ２ Cl ６ , CHCl ３ , S.O. ２ Cl ２ , BCl ３ , PCl ３ , PCl ５ and POCl ３ The bromine-containing gas is at least one gas selected from the group consisting of Br ２ , HBr, CBr ２ F ２ , C ２ F ５ Br, PBr ３ , PBr ５ , POBr ３ and BBr ３ The iodine-containing gas is at least one gas selected from the group consisting of HI, CF, and the like. ３ I, C ２ F ５ I, C ３ F ７ I, IF ５ , IF ７ , I ２ , P.I. ３ In one example, the halogen-containing gas other than fluorine is at least one gas selected from the group consisting of Cl ２ Gas, Br ２ In one example, the halogen-containing gas other than fluorine may be at least one selected from the group consisting of Cl gas and HBr gas. ２ gas or HBr gas.

[0083] In one embodiment, the second process gas may further include a boron-containing gas, such as BCl. ３ It's gas.

[0084] In one embodiment, the second process gas may further include an oxygen-containing gas, such as O ２ , CO, CO ２ , H ２ O and H ２ O ２ In one example, the oxygen-containing gas may be at least one gas selected from the group consisting of H ２ Oxygen-containing gases other than O, e.g., O ２ , CO, CO ２ and H ２ O ２ The flow rate of the oxygen-containing gas may be adjusted depending on the flow rate of other gases (e.g., carbon-containing gas) contained in the second process gas.

[0085] In one embodiment, the second process gas is NF ３ Gas, SF ６ Gas, WF ６ gas or XeF ２ It may further include a carbon-free fluorine-containing gas such as molybdenum.

[0086] In one embodiment, the second process gas may further include an inert gas, such as a noble gas such as Ar gas, He gas, or Kr gas, or N ２ Gas is fine.

[0087] The second process gas may contain a gas capable of generating hydrogen fluoride species (HF species) in plasma instead of a part or all of the HF gas. The HF species include at least one of hydrogen fluoride gas, radicals, and ions. The gas capable of generating HF species may be, for example, the above-mentioned CF-based gas or CHF-based gas. The gas capable of generating HF species may be, for example, a mixed gas containing a hydrogen source and a fluorine source. The hydrogen source may be, for example, H ２ Gas, NH ３ Gas, H ２ O gas, H ２ O ２Gas, CH ４ Gas, C ３ H ６ The fluorine source may be at least one selected from the group consisting of NF ３ Gas, SF ６ Gas, WF ６ gas or XeF ２ The fluorine source may be a fluorine-containing gas that does not contain carbon, such as a CF-based gas or a CHF-based gas.

[0088] In step ST13, plasma is generated from the second process gas in the chamber 10. For example, a source RF signal is supplied to the lower electrode of the substrate support 11 and / or the upper electrode of the shower head 13. When a high-frequency electric field is generated between the shower head 13 and the substrate support 11, plasma is generated from the etching gas in the chamber 10. Active species such as ions and radicals in the plasma etch the silicon-containing film SF exposed through the opening OP in the mask MK. During plasma generation, a bias signal may be supplied to the lower electrode of the substrate support 11. In this case, a bias potential is generated between the plasma and the substrate W, which may attract ions in the plasma to the substrate W and promote etching. The bias signal may be a bias DC signal supplied from the DC generator 32a or a bias RF signal supplied from the second RF generator 31b. In one embodiment, a bias signal may not be supplied to the lower electrode of the substrate support 11.

[0089] 9 is a diagram showing an example of a cross-sectional structure of the substrate W during processing in step ST13. As shown in Fig. 9, the portion of the silicon-containing film SF exposed at the opening OP is etched in the depth direction (from top to bottom in Fig. 9) by active species in the plasma. As a result, a recess RC having a shape corresponding to the opening OP is formed.

[0090] 10 is a diagram showing an example of the bevel portion of the substrate W after processing in step ST13. In step ST13, some of the particles generated in the plasma processing space 10s may find their way to the back surface WB side through the gap gp between the bevel portion WE of the substrate W and the ring assembly 112. Such particles may be, for example, particles in the plasma generated from the second processing gas or by-products of etching. As shown in FIG. 10 , the particles may adhere to the film CF on the end WE2 of the bevel portion WE to form a deposited film DF. The deposited film DF may include, for example, hydrocarbon compounds, nitrogen compounds, phosphorus compounds, halogen compounds, silicon compounds, etc.

[0091] Particles that adhere to the film CF to form the deposited film DF are less likely to peel off from the substrate W than when they are deposited directly on the silicon wafer (i.e., when the film CF is not formed on the edge WE2 and the particles are deposited on the exposed silicon wafer). This is because the adhesion between the film CF and the deposited film DF tends to be stronger than the adhesion between the silicon wafer and the deposited film DF. Furthermore, when the first process gas for forming the film CF is a CF-based gas, the adhesion between the film CF and the silicon wafer is high and the film CF tends to be less likely to peel off from the substrate W. As a result, the generation of particles in the chamber 10 can be suppressed. This can also suppress the occurrence of arcing caused by film peeling from the substrate W.

[0092] According to the above embodiment, it is possible to provide a technique for suppressing particles in a chamber.

[0093] 11 and 12 are flowcharts illustrating another example of the method MT. For example, as shown in FIG. 11 , in the method MT, steps ST12 and ST13 may be performed simultaneously. That is, a process gas containing a first process gas and a second process gas may be simultaneously supplied into the chamber 10, and plasma may be generated from the process gases. In this case, the formation of the film CF on the bevel portion WE of the substrate W and the etching of the silicon-containing film SF proceed in parallel. At this time, the flow rate of the first process gas relative to the total flow rate of the process gas excluding the inert gas may be 5% or less, 3% or less, 1% or less, 0.7% or less, 0.5% or less, or 0.3% or less.

[0094] 12 , in the method MT, after the steps ST12 and ST13 are simultaneously performed, the step ST13 may be further performed for a given time T2. In one embodiment, the time (T1) for simultaneously performing the steps ST12 and ST13 is shorter than the time (T2) for subsequently performing only ST13 (T1<T2). In one embodiment, the time (T1) for simultaneously performing the steps ST12 and ST13 may be 30% or less, 20% or less, or 10% or less of the total etching time (T1+T2).

[0095] Examples Next, examples of the present processing method will be described, but the present disclosure is not limited to the following examples.

[0096] Example 1 In Example 1, a substrate having a structure similar to that of the substrate shown in FIG. 6 was etched in accordance with the flow chart described with reference to FIG. 12 using the plasma processing apparatus 1 shown in FIGS. 2 and 3. The first processing gas contained a CF-based gas. The second processing gas contained HF gas, a phosphorus-containing gas, and a CHF-based gas. The first processing gas accounted for approximately 0.5% of the total processing gas flow rate. The time during which steps ST12 and ST13 were simultaneously performed was approximately 10% of the total etching time.

[0097] Reference Example 1 In Reference Example 1, etching was performed under the same conditions as in Example 1, except that step ST12 was not performed.

[0098] In Example 1, no system error occurred in the plasma processing apparatus 1 until the end of etching. Furthermore, no film peeling was observed on the bevel portion of the substrate W at the end of etching. In contrast, in Reference Example 1, the plasma processing apparatus 1 was stopped due to a system error before the end of etching. When the bevel portion of the substrate W was observed at this stage, film peeling was found to have occurred in multiple locations. It is presumed that arcing occurred in the chamber 10 due to this film peeling, causing the system error.

[0099] Embodiments of the present disclosure further include the following aspects.

[0100] (Supplementary Note 1) A plasma processing apparatus comprising: a chamber; a substrate support within the chamber; a first gas introduction part configured to supply a first process gas to the chamber; a second gas introduction part configured to supply a second process gas to the chamber; and a controller, wherein the controller is configured to: (a) provide a substrate including a silicon-containing film on the substrate support part; (b) generate plasma from the first process gas supplied to the chamber from the first gas introduction part to form a film on a bevel portion of the substrate; and (c) generate plasma from the second process gas supplied to the chamber from the second gas introduction part to etch the silicon-containing film.

[0101] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the first processing gas contains a CF-based gas.

[0102] (Note 3) The CF-based gas is C ４ F ８ Gas, C ４ F ６ Gas, C ３ F ８ Gas, C ３ F ６ Gas and CF ４ 3. The plasma processing apparatus of claim 2, further comprising at least one gas selected from the group consisting of:

[0103] (Supplementary Note 4) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 3, wherein the second processing gas includes a CHF-based gas.

[0104] (Note 5) The CHF-based gas is C ４ H ２ F ６ Gas, C ３ H ２ F ４ Gas and CH ２ F ２ 5. The plasma processing apparatus of claim 4, further comprising at least one gas selected from the group consisting of:

[0105] (Supplementary Note 6) The plasma processing apparatus according to any one of Supplementary Notes 1 to 4, wherein the first gas introduction part is disposed radially outward of the second gas introduction part.

[0106] (Supplementary Note 7) The plasma processing apparatus according to any one of Supplementary notes 1 to 6, wherein the first gas introduction part is disposed so as to surround the second gas introduction part.

[0107] (Supplementary Note 8) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, further comprising: a shower head disposed opposite the substrate support and having a plurality of gas supply holes extending from a central region to a peripheral region, wherein the first gas introduction part is provided in the peripheral region of the shower head, and the second gas introduction part is provided in the central region of the shower head.

[0108] (Supplementary Note 9) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, further comprising: a shower head disposed opposite the substrate support and having a plurality of gas supply holes; the first gas introduction part is provided in a side wall of the chamber; and the second gas introduction part is provided in the shower head.

[0109] (Supplementary Note 10) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 9, wherein after (b) is performed, (c) is performed.

[0110] (Supplementary Note 11) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 9, wherein (b) and (c) are performed simultaneously.

[0111] (Supplementary Note 12) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 9, after (b) and (c) are simultaneously performed.

[0112] (Supplementary Note 13) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 12, wherein the second processing gas further contains hydrogen fluoride gas.

[0113] (Supplementary Note 14) The plasma processing apparatus according to any one of Supplementary Note 1 to Supplementary Note 13, wherein the second processing gas further contains at least one gas selected from the group consisting of a phosphorus-containing gas, a halogen-containing gas other than fluorine, a metal-containing gas, an oxygen-containing gas, and an inert gas.

[0114] (Supplementary Note 15) A plasma processing method, comprising: (a) providing a substrate including a silicon-containing film on a substrate support in a chamber; (b) generating plasma from a first process gas supplied to the chamber from a first gas inlet to form a film on a bevel portion of the substrate; and (c) generating plasma from a second process gas supplied to the chamber from a second gas inlet to etch the silicon-containing film.

[0115] (Supplementary Note 16) The plasma processing method according to Supplementary Note 15, wherein the first processing gas contains a CF-based gas.

[0116] (Supplementary Note 17) The plasma processing method according to Supplementary Note 15 or Supplementary Note 16, wherein the second processing gas contains a CHF-based gas.

[0117] (Supplementary Note 18) The plasma processing method according to any one of Supplementary Note 15 to Supplementary Note 17, wherein after (b) is performed, (c) is performed.

[0118] (Supplementary Note 19) The plasma processing method according to any one of Supplementary Note 15 to Supplementary Note 17, wherein (b) and (c) are performed simultaneously.

[0119] (Supplementary Note 20) The plasma processing method according to any one of Supplementary Notes 15 to 17, after (b) and (c) are simultaneously performed.

[0120] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0121] REFERENCE SIGNS LIST 1: plasma processing apparatus, 2: control unit, 10: plasma processing chamber, 10s: plasma processing space, 11: substrate support unit, 13: shower head, 13A: peripheral region, 13B: central region, 131c: first gas inlet, 132c: second gas inlet, 20: gas supply unit, 20A: first gas supply unit, 20B: second gas supply unit, 31a: first RF generation unit, 31b: second RF generation unit, 32a: first DC generation unit, SF: silicon-containing film, MK: mask, OP: opening, RC: recess, UF: base film, W: substrate

Claims

1. A plasma processing apparatus, comprising: - a chamber; 3. The CF-based gas is C ４ F ８ gas, C ４ F ６ gas, C ３ F ８ gas, C ３ F ６ gas, and CF ４ gas, and the plasma processing apparatus according to claim 2, comprising at least one gas selected from the group consisting of - a substrate support portion within the chamber; 5. The CHF-based gas is C ４ H ２ F ６ gas, C ３ H ２ F ４ gas, and CH ２ F ２ The plasma processing apparatus according to claim 4, comprising at least one gas selected from the group consisting of gas. - a first gas introduction portion configured to supply a first processing gas to the chamber; - a second gas introduction portion configured to supply a second processing gas to the chamber; and - a control unit, wherein the control unit is configured to: - (a) provide a substrate including a silicon-containing film on the substrate support portion; - (b) generate plasma from the first processing gas supplied from the first gas introduction portion to the chamber and form a film on the bevel portion of the substrate; - (c) generate plasma from the second processing gas supplied from the second gas introduction portion to the chamber and etch the silicon-containing film.

2. The plasma processing apparatus according to claim 1, wherein the first processing gas includes a CF-based gas.

4. The plasma processing apparatus according to claim 2, wherein the second processing gas includes a CHF-based gas.

6. The plasma processing apparatus according to claim 1, wherein the first gas introduction portion is disposed radially outside the second gas introduction portion.

7. The plasma processing apparatus according to claim 6, wherein the first gas introduction portion is disposed so as to surround the second gas introduction portion.

8. The plasma processing apparatus according to claim 1, further comprising a shower head disposed opposite to the substrate support portion and provided with a plurality of gas supply holes extending from a central region to an outer peripheral region, wherein the first gas introduction portion is provided in the outer peripheral region of the shower head, and the second gas introduction portion is provided in the central region of the shower head.

9. The plasma processing apparatus according to claim 1, further comprising a shower head disposed opposite to the substrate support portion and provided with a plurality of gas supply holes, wherein the first gas introduction portion is provided on a side wall of the chamber, and the second gas introduction portion is provided on the shower head.

10. The plasma processing apparatus according to claim 1, wherein after (b) is executed, (c) is executed.

11. The plasma processing apparatus according to claim 1, wherein (b) and (c) are executed simultaneously.

12. The plasma processing apparatus according to claim 11, wherein after (b) and (c) are executed simultaneously, (c) is further executed.

13. The plasma processing apparatus according to claim 1, wherein the second processing gas further contains hydrogen fluoride gas.

14. The plasma processing apparatus according to claim 13, wherein the second processing gas further contains at least one gas selected from the group consisting of a phosphorus-containing gas, a halogen-containing gas other than fluorine, a metal-containing gas, an oxygen-containing gas, and an inert gas.

15. A plasma processing method, comprising: (a) providing a substrate including a silicon-containing film on a substrate support portion in a chamber; (b) generating plasma from a first processing gas supplied to the chamber from a first gas introduction portion, and forming a film on a bevel portion of the substrate; (c) generating plasma from a second processing gas supplied to the chamber from a second gas introduction portion, and etching the silicon-containing film.

16. The plasma processing method according to claim 15, wherein the first processing gas contains a CF-based gas.

17. The plasma processing method according to claim 16, wherein the second processing gas contains a CHF-based gas.

18. The plasma processing method according to claim 16, wherein (c) is executed after (b) is executed.

19. The plasma processing method according to claim 17, wherein (b) and (c) are executed simultaneously.

20. The plasma processing method according to claim 17, wherein (c) is further executed after (b) and (c) are executed simultaneously.

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