Substrate processing device, manufacturing method for semiconductor device, and program

Abstract

The present invention provides a technology for improving production yield by shortening the substrate heating time.　The present invention comprises: a processing chamber for heat-treating a substrate; a container in which is placed an unprocessed substrate to be conveyed into the processing chamber or a processed substrate carried out from the processing chamber; a supply part for supplying a fluid for heating the unprocessed substrate placed in the container or for cooling the processed substrate placed in the container; a discharge part for discharging the fluid from the container; an accumulation part for accumulating the fluid that cooled the processed substrate and that has been heated; and a control unit capable of performing control such that the fluid accumulated in the accumulation part is supplied to the container to heat the unprocessed substrate.

Description

Substrate processing apparatus, semiconductor device manufacturing method and program

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program.

[0002] For example, Japanese Patent Application Laid-Open No. 2023-044818 discloses a substrate processing apparatus that provides technology having a processing chamber for processing substrates, a processing gas supply unit for supplying processing gas to the processing chamber, a transfer chamber that can communicate with the processing chamber, a first inert gas supply unit for supplying inert gas to the transfer chamber, a first exhaust unit for exhausting the atmosphere from the transfer chamber, and a second inert gas supply unit for supplying the inert gas exhausted by the first exhaust unit to the processing chamber or a downstream portion of the processing chamber.

[0003] The present disclosure provides a technique for improving productivity by reducing the heating time of a substrate.

[0004] According to one aspect, a technology is provided that includes a processing chamber for heat-treating a substrate, a container in which an unprocessed substrate to be loaded into the processing chamber or a processed substrate to be unloaded from the processing chamber is placed, a supply unit that supplies a fluid to heat the unprocessed substrate placed in the container or to cool the processed substrate, a discharge unit that discharges the fluid from the container, a storage unit that cools the processed substrate and stores the heated fluid, and a control unit that can control the fluid stored in the storage unit to be supplied to the container and heat the unprocessed substrate.

[0005] According to the present disclosure, productivity can be improved by shortening the heating time of the substrate.

[0006] 1 is a schematic overall view of a substrate processing apparatus used in an embodiment of the present disclosure; FIG. 2 is a side cross-sectional view of the substrate processing apparatus used in an embodiment of the present disclosure; FIG. 3 is a block diagram showing an overview of a control unit used in an embodiment of the present disclosure; FIG. 4 is an example of a screen displayed on a display unit used in an embodiment of the present disclosure; FIG. 5 is a schematic enlarged view of the accumulation unit in FIG. 5; FIG. 6 is a flow diagram showing a process of supplying an inert gas to an unprocessed substrate to heat the unprocessed substrate, among substrate processing processes according to an embodiment of the present disclosure; and FIG. 7 is a flow diagram showing a process of supplying an inert gas to a processed substrate to cool the processed substrate, among substrate processing processes according to an embodiment of the present disclosure.

[0007] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[0008] The substrate processing apparatus exemplified in the following description is used in the manufacturing process of semiconductor devices and is configured to perform a predetermined process on a substrate to be processed. The substrate to be processed is, for example, a wafer (hereinafter simply referred to as a "substrate") serving as a semiconductor substrate on which a semiconductor device (semiconductor device) is fabricated. Note that, in this specification, the term "substrate" can mean "the substrate itself" or "a laminate (assembly) of a substrate and predetermined layers, films, etc. formed on its surface" (i.e., the substrate includes predetermined layers, films, etc. formed on the surface). Also, in this specification, the term "surface of a substrate" can mean "the surface (exposed surface) of the substrate itself" or "the surface of predetermined layers, films, etc. formed on the substrate, i.e., the outermost surface of the substrate as a laminate."

[0009] Predetermined process treatments (hereinafter sometimes simply referred to as "treatments") performed on a substrate include, for example, oxidation treatment, diffusion treatment, annealing treatment, etching treatment, pre-cleaning treatment, chamber cleaning treatment, film formation treatment, etc. In this embodiment, a case where a film formation treatment is performed will be particularly taken as an example.

[0010] In this specification, the processing temperature refers to the temperature of the substrate 200 or the temperature inside the processing chamber 202, and the processing pressure refers to the pressure inside the processing chamber 202. Furthermore, the processing time refers to the time the processing continues. These terms also apply to the following description.

[0011] (Configuration) The overall configuration of a substrate processing apparatus 10 according to an embodiment of the present disclosure will be described with reference to FIGS. 1 and 2. FIG. 1 is a horizontal cross-sectional view showing an example of the overall configuration of the substrate processing apparatus 10 according to an embodiment. FIG. 2 is a vertical cross-sectional view showing an example of the overall configuration of the substrate processing apparatus 10 according to an embodiment. Note that all drawings used in the following description are schematic, and the dimensional relationships between elements, the ratios of elements, and the like shown in the drawings do not necessarily correspond to actual ones. Furthermore, the dimensional relationships between elements, the ratios of elements, and the like do not necessarily correspond between multiple drawings.

[0012] 1 and 2, the substrate processing apparatus 10 of this embodiment includes a plurality of process modules 201a, 201b, 201c, and 201d for processing a substrate 200, a vacuum transfer chamber 103 for transferring the substrate 200 under vacuum pressure, a load lock chamber 122 which is a container for placing the substrate 200 by switching between atmospheric pressure and vacuum pressure, an atmospheric transfer chamber 121 for transferring the substrate 200 under atmospheric pressure, a display unit 518 (see FIG. 3) for displaying the status of the substrate processing apparatus 10, and a control unit 500 capable of controlling the substrate processing apparatus 10. The substrate processing apparatus 10 of this embodiment is a so-called cluster type having a plurality of process modules 201a to 201d around the vacuum transfer chamber 103.

[0013] Each of these components will be described in detail below. In the following description, the X1 direction is the right, the X2 direction is the left, the Y1 direction is the front, and the Y2 direction is the rear.

[0014] (Processing Module) First, the detailed configuration of each of the processing modules 201a to 201d will be described. Each of the processing modules 201a to 201d functions as a single-wafer type substrate processing apparatus 10, and all have the same configuration.

[0015] Here, a specific configuration will be described using one of the process modules 201a to 201d as an example. Because one of the process modules 201a to 201d is used as an example, in the following description, the process modules 201a to 201d will be simply referred to as "process module 201," the cold-wall type process vessels 203a to 203d constituting each of the process modules 201a to 201d will be simply referred to as "process vessel 203," the process chambers 202a to 202d formed in each of the process vessels 203a to 203d will be simply referred to as "process chamber 202," and the gate valves 161a to 161d corresponding to each of the process modules 201a to 201d will be simply referred to as "gate valve 161."

[0016] The processing module 201 includes a processing vessel 203, a source gas supply system 243, a reaction gas supply system 244, a purge gas supply system 245, a cleaning gas supply system 248, and a gas exhaust system.

[0017] (Processing Vessel) As described above, the processing module 201 is configured with a cold-wall type processing vessel 203. The processing vessel 203 is, for example, a flat, sealed vessel having a circular cross section and is configured from a metal material such as aluminum (Al) or stainless steel (SUS). The processing vessel 203 is configured with an upper vessel 203U and a lower vessel 203L.

[0018] A processing chamber 202 is formed within the processing vessel 203. The processing chamber 202 is provided with a processing space 202P located on the upper side (a space above a substrate mounting table 212 described later) for processing a substrate 200 such as a wafer, and a transfer space 202T below the processing space 202P, which is a space surrounded by a lower vessel 203L.

[0019] An exhaust buffer chamber 209 is provided near the outer peripheral edge inside the upper vessel 203U. The exhaust buffer chamber 209 functions as a buffer space when gas inside the processing chamber 202 is exhausted toward the lateral periphery. For this purpose, the exhaust buffer chamber 209 has a space provided to surround the lateral periphery of the processing chamber 202. In other words, the exhaust buffer chamber 209 has a space formed in a ring shape (annular shape) in a plan view on the outer periphery side of the processing chamber 202.

[0020] A substrate loading / unloading port 206 adjacent to the gate valve 161 is provided on the side surface of the lower vessel 203L, i.e., on one of the walls constituting the processing vessel 203. The substrate 200 is loaded into the transfer space 202T through the substrate loading / unloading port 206. A plurality of lift pins 207 are provided on the bottom of the lower vessel 203L.

[0021] (Substrate Supporting Part) A substrate supporting part (susceptor) 210 that supports the substrate 200 is provided within the processing chamber 202. The substrate supporting part 210 mainly includes a substrate mounting surface 211 on which the substrate 200 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, and a heater 213 as a heat source contained within the substrate mounting table 212. The substrate mounting table 212 is provided with through holes 214, through which the lift pins 207 pass, at positions corresponding to the lift pins 207.

[0022] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 penetrates the bottom of the processing vessel 203 and is further connected to an elevating mechanism 218 outside the processing vessel 203. By operating the elevating mechanism 218 to raise and lower the shaft 217 and the substrate mounting table 212, the substrate mounting table 212 can raise and lower the substrate 200 mounted on the substrate mounting surface 211. The lower end of the shaft 217 is covered with a bellows 219, and the inside of the processing vessel 203 is kept airtight.

[0023] When transporting the substrate 200, the substrate mounting table 212 lowers to a position (substrate transport position) where the substrate mounting surface 211 faces the substrate loading / unloading port 206, and when processing the substrate 200, it rises until the substrate 200 reaches a processing position (substrate processing position) within the processing space 202P.

[0024] Specifically, when the substrate mounting table 212 is lowered to the substrate transfer position, the upper ends of the lift pins 207 protrude from the upper surface of the substrate mounting surface 211, and the lift pins 207 support the substrate 200 from below. When the substrate mounting table 212 is raised to the substrate processing position, the lift pins 207 sink from the upper surface of the substrate mounting surface 211, and the substrate mounting surface 211 supports the substrate 200 from below.

[0025] (Shower Head) A shower head 230 serving as a gas dispersion mechanism is provided above the processing space 202P (upstream in the gas supply direction). A gas inlet 241 is provided in a lid 231 of the shower head 230. The gas inlet 241 is configured to communicate with a gas supply system, which will be described later. Gas introduced from the gas inlet 241 is supplied to a buffer space 232 of the shower head 230.

[0026] An insulating block 233 is provided between the lid 231 and the upper vessel 203U to insulate the lid 231 from the upper vessel 203U.

[0027] The shower head 230 includes a dispersion plate 234 for dispersing gas supplied from a gas supply system via a gas inlet 241. The upstream side of the dispersion plate 234 is the buffer space 232, and the downstream side is the processing space 202P. The dispersion plate 234 is provided with a plurality of through holes 234a. The dispersion plate 234 is disposed to face the substrate mounting surface 211.

[0028] (Gas Supply System) A common gas supply pipe 242 is connected to the lid 231 of the shower head 230 so as to communicate with the gas inlet 241. The common gas supply pipe 242 communicates with a buffer space 232 in the shower head 230 via the gas inlet 241. A first gas supply system 243, a second gas supply system 244, and a third gas supply system 245 are also connected to the common gas supply pipe 242.

[0029] Of these, the source gas supply system (source gas supply unit) serving as the first gas supply system 243 mainly supplies a source gas, which is one type of process gas, and the reactive gas supply system (reactive gas supply unit) serving as the second gas supply system 244 mainly supplies a reactive gas, which is another type of process gas. The purge gas supply system (purge gas supply unit) serving as the third gas supply system 245 mainly supplies an inert gas as a purge gas when processing the substrate 200, and the cleaning gas supply system (cleaning gas supply unit) serving as the fourth gas supply system 248 mainly supplies a cleaning gas via the purge gas supply system when cleaning the shower head 230 or the process chamber 202. Note that with regard to the gases supplied from the gas supply systems, the source gas may be referred to as the first gas, the reactive gas as the second gas, the inert gas as the third gas, and the cleaning gas as the fourth gas. Furthermore, the gas supply systems may be collectively referred to as the gas supply units.

[0030] (Gas Exhaust System) The processing vessel 203 is equipped with an exhaust system 223 that exhausts the atmosphere in the processing chamber 202 through an exhaust port 221 provided on the top surface or side of the exhaust buffer chamber 209. The exhaust system 223 also includes an APC (Auto Pressure Controller) (not shown), which controls the pressure in the processing vessel 203 in response to instructions from a control unit 500 (described later).

[0031] (Atmospheric Transfer Chamber) The atmospheric transfer chamber 121 is connected to the front side of the load lock chamber 122 via a gate valve 128. The atmospheric transfer chamber 121 is used under approximately atmospheric pressure.

[0032] An atmospheric transfer robot 124 for transferring the substrate 200 is installed in the atmospheric transfer chamber 121. The atmospheric transfer robot 124 is configured to be movable up and down and in the left and right directions (see FIG. 2).

[0033] On the left side of the atmospheric transfer chamber 121, a device (hereinafter referred to as a "pre-aligner") 106 for aligning a notch or an orientation flat formed on the substrate 200 is installed (see FIG. 1).

[0034] (IO Stage) A substrate loading / unloading port 134 for loading / unloading the substrate 200 into / out of the atmospheric transfer chamber 121 and a pod opener 108 are installed on the front side of the housing 125 of the atmospheric transfer chamber 121. On the opposite side of the substrate loading / unloading port 134 from the pod opener 108, i.e., on the outside of the housing 125, an IO stage 105 is installed.

[0035] A plurality of FOUPs (Front Opening Unified Pods: hereinafter referred to as "pods 100") 100, each containing a plurality of substrates 200, are mounted on the IO stage 105. The pods 100 are used as carriers for transporting substrates 200 such as silicon (Si) substrates. The pods 100 are configured to store a plurality of unprocessed substrates 200 and a plurality of processed substrates 200 in a horizontal position. The pods 100 are supplied to and discharged from the IO stage 105 by an in-process transport device (RGV) (not shown).

[0036] The pod 100 on the IO stage 105 is opened and closed by a pod opener 108. The pod opener 108 has a mechanism for opening and closing a cap (not shown) of the pod 100. The pod opener 108 opens and closes the cap (not shown) of the pod 100 placed on the IO stage 105 and opens and closes the substrate loading / unloading port, thereby enabling the substrate 200 to be loaded and unloaded into and from the pod 100.

[0037] (Vacuum Transfer Chamber) The vacuum transfer chamber 103 functions as a transfer chamber, which is a transfer space in which the substrate 200 is transferred under negative pressure. The housing 101 that constitutes the vacuum transfer chamber 103 is formed in a hexagonal shape in a plan view. The load lock chamber 122 and each of the processing modules 201a to 201d are connected to each side of the hexagon via gate valves 160 and 161a to 161d, respectively.

[0038] Of the six side walls of the housing 101 that constitute the vacuum transfer chamber 103, the remaining four side walls to which the load lock chamber 122 is not connected are connected via gate valves 161a to 161d to process modules 201a to 201d that perform desired processing on the substrate 200, so as to be positioned radially around the vacuum transfer chamber 103. Each of the process modules 201a to 201d is composed of a cold-wall processing vessel 203a to 203d, and each has one processing chamber 202a to 202d formed therein. Within each of the processing chambers 202a to 202d, processing is performed on the substrate 200 as part of a semiconductor or semiconductor device manufacturing process. Examples of processing performed within each of the processing chambers 202a to 202d include various substrate processing processes, such as forming a thin film on the substrate, oxidizing, nitriding, or carbonizing the substrate surface, forming a film such as silicide or metal, etching the substrate surface, and reflow processing.

[0039] A vacuum transfer robot 112, which serves as a transfer robot for transferring (transferring) the substrate 200 under negative pressure, is installed at approximately the center of the vacuum transfer chamber 103, with a flange 115 as its base. The vacuum transfer robot 112 is configured so that it can move up and down using an elevator 116 and the flange 115 while maintaining the airtightness of the vacuum transfer chamber 103 (see FIG. 2).

[0040] (Load Lock Chamber) Two load lock chambers 122, which are an example of a container in this embodiment, are connected to the two front side walls of the six side walls of the housing 101 that constitutes the vacuum transfer chamber 103 via gate valves 160. A substrate loading stage 150 for the loading chamber is installed in each load lock chamber 122. Each load lock chamber 122 is configured to be able to withstand negative pressure. The two load lock chambers 122 may be used for loading or unloading, respectively.

[0041] 5, which will be described later, the load lock chamber 122 is also provided with a temperature sensor 302 and a pressure sensor 304. The temperature sensor 302 measures the temperature inside the load lock chamber 122 and transmits the measured value to a temperature measurement unit 532, which will be described later. The pressure sensor 304 measures the pressure inside the load lock chamber 122 and transmits the measured value to a pressure measurement unit 536, which will be described later. A preheating and cooling system is also connected to the load lock chamber 122. The preheating and cooling system will be described later.

[0042] The interior of the load lock chamber 122 can be switched between atmospheric pressure and vacuum pressure, and for example, when an unprocessed substrate 200 is carried in from the atmospheric transfer chamber 121 or a processed substrate 200 is carried out to the atmospheric transfer chamber 121, the interior of the load lock chamber 122 is switched to atmospheric pressure. Also, when a processed substrate 200 is carried in from the vacuum transfer chamber 103 or an unprocessed substrate 200 is carried out to the vacuum transfer chamber 103, the interior of the load lock chamber 122 is switched to vacuum pressure.

[0043] (Control Unit) The control unit 500 is a component that controls the operation of each unit that constitutes the substrate processing apparatus 10. As shown in Fig. 3, the control unit 500 includes a CPU (Central Processing Unit) 501, which is an example of a processor, and a RAM (Random Access Memory) 502, which is used as a temporary work area for the CPU 501. The control unit 500 also includes a ROM (Read Only Memory) 503 that stores a control program that causes the CPU 501 to function as the control unit 500, a storage unit 504 that stores the results of program execution, and an I / O port 505. The CPU 501, RAM 502, storage unit 504, and I / O port 505 are connected to each other via a bus (not shown).

[0044] In this way, dedicated processors and memories for executing the respective processes are assigned to the control unit 500. The CPU 501 reads a control program from the ROM 503 and executes the overall control of the substrate processing apparatus 10, which is performed by the control unit 500. In other words, the control unit 500 in this embodiment is also an example of a computer.

[0045] The storage unit 504 is an example of a storage device that maintains stored information even if the power supplied to each unit is cut off, and is implemented, for example, by a semiconductor memory, but may also be implemented by a hard disk.

[0046] As shown in FIG. 3, the I / O port 505 is connected to a process control unit 522 and a transport control unit 524 .

[0047] The process control unit 522 is a control device that controls the substrate processing apparatus 10 to execute a processing procedure for the substrate 200. Specifically, the process control unit 522 is connected to a temperature measurement unit 532, a gas supply unit 534, and a pressure measurement unit 536.

[0048] As an example, the temperature measurement unit 532 is connected to a temperature sensor (not shown) arranged in the processing chamber 202, etc., or the temperature sensor 302 arranged in the load lock chamber 122, and is a device that measures the temperature of the internal space of the configuration or the temperature of the substrate 200 and transmits the measurement results to the control unit 500.

[0049] As another example, the gas supply unit 534 is a device that controls the supply and stop of various gases connected to the above-mentioned processing unit. The gas supply unit 534 also controls various valves included in a preheating / cooling system (described later) to control the gases supplied to the processing chamber 202 and the load lock chamber 122.

[0050] As an example, the pressure measurement unit 536 is connected to a pressure sensor (not shown) arranged in the processing chamber 202, etc., or the pressure sensor 304 arranged in the load lock chamber 122, and is a device that measures the pressure in the internal space of the configuration and transmits the measurement results to the control unit 500.

[0051] The transfer control unit 524 is a control device that is connected to the components that drive the atmospheric transfer robot 124, vacuum transfer robot 112, gate valve 160, etc., and controls the driving of these components based on instructions from the control unit 500.

[0052] As shown in FIG. 3, the I / O port 505 is connected to an external communication unit 512, an external storage unit 514, an operation unit 516, and a display unit 518.

[0053] The external communication unit 512 is connected to a communication line and has a communication protocol for transmitting and receiving data to and from an external device (not shown) connected to the same communication line. The external communication unit 512 performs data communication with the external device in accordance with instructions from the CPU 501 in the control unit 500.

[0054] The external storage unit 514 is a device for storing various data and the like, which is provided separately from the storage unit 504 of the control unit 500. The specific configuration of the external storage unit 514 is not particularly limited, but examples thereof include a storage device connected via a network, such as a network attached storage (NAS), and a portable recording medium, such as an SD memory card.

[0055] The operation unit 516 is a device that receives instructions from an operator and notifies the CPU 501 of the control unit 500 of the received instructions, and may be, for example, a button provided on the housing of the substrate processing apparatus 10 or a pendant board connected to the substrate processing apparatus 10. The display unit 518 is a display device that displays information about the substrate processing apparatus 10, and may be, for example, a liquid crystal display or an organic EL (Electro Luminescence) display.

[0056] In this embodiment, the display unit 518 and the operation unit 516 will be described as an example of a touch panel that can be operated by the operator touching the screen, as shown in Fig. 4 described later. In other words, in this embodiment, the touch panel is a device that serves as both the display unit 518 and the operation unit 516. Specific descriptions of what is displayed on the touch panel will be provided later.

[0057] Note that each component connected to the I / O port 505 is an example, and a component is connected according to the function of the substrate processing apparatus 10. Note that the component represents an execution unit that executes processing under the control of a processor such as the CPU 501 and the RAM 502.

[0058] (Display Unit) As shown in FIG. 4, the display screen 518D of the display unit 518 displays each component of the substrate processing apparatus 10 in a schematic manner.

[0059] 4, the display screen 518D displays an icon I105 indicating the status of the multiple IO stages 105, and an icon I121 indicating the status of the atmospheric transfer chamber 121. The display screen 518D also displays an icon I122 indicating the status of each of the multiple load lock chambers 122, an icon I103 indicating the status of the vacuum transfer chamber 103, and an icon I203 indicating the status of each of the multiple processing chambers 202. The display screen 518D also displays an icon IW indicating the presence or absence of a substrate 200.

[0060] In addition, the "state" referred to in the above description includes the presence or absence of other components housed inside each component, as well as the state of the process each component is performing, the temperature of the gas supplied to each component, and so on.

[0061] Furthermore, the icon I122 indicating the state of the load lock chamber 122 includes a gas temperature icon GT indicating the temperature of the inert gas supplied to the load lock chamber 122. As an example, when the gas temperature icon GT indicates "HOT," high-temperature inert gas is supplied to the load lock chamber 122, and when the gas temperature icon GT indicates "COLD," low-temperature inert gas is supplied to the load lock chamber 122.

[0062] Next, the preheating and cooling system 340 according to this embodiment will be described with reference to FIGS.

[0063] (Preheating and Cooling System) As shown in FIG. 5, the preheating and cooling system 340 includes an inert gas supply system 342 , an inert gas exhaust system 344 , and an accumulation unit 402 .

[0064] (Inert Gas Supply System) As shown in FIG. 5 , the inert gas supply system 342 includes a tank 400, a supply pipe 410, a first on-off valve 414, a first three-way valve 416, a second on-off valve 418, a first inlet pipe 420, and a first outlet pipe 422.

[0065] The tank 400 stores an inert gas, which is an example of a fluid according to this embodiment. The temperature of the inert gas stored in the tank 400 is, for example, room temperature or a temperature equivalent to the temperature of the environment in which the substrate processing apparatus 10 is installed. In other words, the temperature of the inert gas stored in the tank 400 is lower than the temperature at which the substrates 200 are processed in the substrate processing apparatus 10. That is, the inert gas inside the tank 400 according to this embodiment is an example of a "cold fluid" in this embodiment.

[0066] The supply pipe 410 is a member that connects the tank 400 and the load lock chamber 122, and is capable of flowing the inert gas inside the tank 400 into the load lock chamber 122. The supply pipe 410 is also provided with an MFC 412 (mass flow controller), a first on-off valve 414, and a first three-way valve 416, in this order from the tank 400 side.

[0067] The MFC 412 is a component that has a function of adjusting the flow rate and pressure of the inert gas supplied from the tank 400. The first on-off valve 414 is a component that opens and closes the flow path of the supply pipe 410, and is capable of controlling the flow of the inert gas supplied from the tank 400 downstream of the MFC 412.

[0068] The first three-way valve 416 is a valve provided downstream of the MFC 412 in the supply pipe 410, and is capable of switching the flow path so that the inert gas flowing through the supply pipe 410 flows to the first inlet pipe 420, as shown in Figure 5.

[0069] As shown in FIG. 5 , the first inlet pipe 420 is connected to the first three-way valve 416 and the accumulation section 402, and is a component that allows the inert gas to flow from the first three-way valve 416 into the accumulation section 402.

[0070] The first discharge pipe 422 is a member that connects the supply pipe 410 and the accumulation unit 402, and is capable of flowing the inert gas from the accumulation unit 402 to the supply pipe 410. The first discharge pipe 422 is also provided with a first filter 424 and a second opening / closing valve 418 in this order from the accumulation unit 402 side.

[0071] As will be described later, the first filter 424 is a member that removes impurities contained in the inert gas stored in the storage unit 402. The impurities include, for example, particles generated during substrate processing, residual gas of the processing gas, etc. The first filter 424 is heat resistant so that it will not be damaged even when an inert gas heated to a temperature at which the substrate 200 is processed in the substrate processing apparatus 10 passes through it.

[0072] The second on-off valve 418 is a component that opens and closes the flow path of the first discharge pipe 422, and is capable of controlling the flow of inert gas supplied from the accumulation section 402 downstream of the first filter 424.

[0073] In this embodiment, the flow path of the fluid flowing from the tank 400 to the load lock chamber 122 is switched by operating the first three-way valve 416 and opening and closing the second on-off valve 418. In other words, the combination of the first three-way valve 416 and the second on-off valve 418 is an example of a supply source switching valve in this embodiment.

[0074] That is, the inert gas supply system 342 in this embodiment is an example of a "supply unit" in this embodiment. The MFC 412 and the first on-off valve 414 are an example of a "first supply unit" in this embodiment. The tank 400 may be included in the first supply unit. The filter and the second on-off valve 418 are an example of a "second supply unit" in this embodiment. The accumulation unit 402 and a heating unit 404, which will be described later, may be included in the second supply unit.

[0075] The tank 400 in the above description of the configuration is an example of a "fluid supply source" in this embodiment. In other words, the fluid supply source is not limited to the tank 400, and other configurations may be used as long as they are capable of supplying the inert gas to the supply pipe 410.

[0076] (Inert Gas Exhaust System) As shown in FIG. 5 , the inert gas exhaust system 344 includes an exhaust pipe 430, a second three-way valve 432, a third three-way valve 434, a bypass pipe 440, a second inlet pipe 436, a second discharge pipe 438, an exhaust pipe 442, a third opening / closing valve 446, and a vacuum pump 406.

[0077] One end of the exhaust pipe 430 is connected to the load lock chamber 122, allowing fluids (including air, inert gas, and process gas) inside the load lock chamber 122 to flow. A second three-way valve 432 is provided at the other end of the exhaust pipe 430.

[0078] The second three-way valve 432 is a component that connects the ends of the discharge pipe 430 , the second inlet pipe 436 , and the bypass pipe 440 , and directs the fluid flowing through the discharge pipe 430 to the second inlet pipe 436 or the bypass pipe 440 .

[0079] The bypass pipe 440 is a member that connects the second three-way valve 432 and the third three-way valve 434 , and allows fluid to flow from the second three-way valve 432 to the third three-way valve 434 .

[0080] The second inlet pipe 436 is a member that connects the second three-way valve 432 and the accumulation section 402 , and allows the inert gas to flow from the second three-way valve 432 to the accumulation section 402 .

[0081] The second discharge pipe 438 is a member that connects the accumulation section 402 and the third three-way valve 434 , and allows the inert gas to flow from the accumulation section 402 to the third three-way valve 434 .

[0082] The third three-way valve 434 is a component that connects the ends of the second discharge pipe 438 , the bypass pipe 440 , and the exhaust pipe 442 , and allows fluid flowing through the second discharge pipe 438 or the bypass pipe 440 to flow into the exhaust pipe 442 .

[0083] The exhaust pipe 442 is a member that connects the third three-way valve 434 and the third on-off valve 446, and is provided with the vacuum pump 406 and the second filter 444 in this order from the third three-way valve 434 side.

[0084] The vacuum pump 406 is a device that sends fluid inside a pipe on the upstream side (the third three-way valve 434 side) of the exhaust pipe 442 to the downstream side (the third on-off valve 446 side). That is, when the vacuum pump 406 is operating, the fluid inside the pipe body (including the bypass pipe 440, the second discharge pipe 438, the second inlet pipe 420, and the exhaust pipe 430) on the upstream side of the vacuum pump 406 in the exhaust pipe 442 is sent to the downstream side of the vacuum pump 406 (the second on-off valve 418 side).

[0085] As will be described later, the second filter 444 is a member that removes impurities contained in the fluid (including the inert gas) flowing through the exhaust pipe 442. The second filter 444 has heat resistance that prevents damage even when an inert gas heated to a temperature at which the substrate 200 is processed in the substrate processing apparatus 10 passes through the second filter 444.

[0086] The third on-off valve 446 is a component that opens and closes the flow path of the exhaust pipe 442 , and is capable of controlling the flow of fluid flowing in the exhaust pipe 442 downstream of the second filter 444 .

[0087] The exhaust pipe 442 is open to the outside of the substrate processing apparatus 10 at a downstream side of the third on-off valve 446. In other words, the fluid flowing through the exhaust pipe 442 is discharged to the atmosphere.

[0088] In this embodiment, the flow path of the fluid flowing from the discharge pipe 430 to the exhaust pipe 442 is switched by the operation of the second three-way valve 432 and the operation of the third three-way valve 434. In other words, the combination of the operation of the second three-way valve 432 and the third three-way valve 434 is an example of a discharge destination switching valve in this embodiment.

[0089] The inert gas exhaust system 344 in the above description of the configuration is an example of the "exhaust unit that exhausts fluid" in this embodiment. In other words, the exhaust unit that exhausts fluid is not limited to the configuration of the inert gas exhaust system 344 described above, and other configurations may be used as long as they are capable of exhausting the fluid inside the load lock chamber 122. The exhaust unit may also include a vacuum pump 406.

[0090] 5 and 6 , the accumulation unit 402 is a tank-shaped component having a housing 407 and a heat insulating member 408. The accumulation unit 402 is connected to a first inlet pipe 420, a second inlet pipe 436, a first discharge pipe 422, and a second discharge pipe 438. That is, the accumulation unit 402 is a component that accumulates inert gas inside the housing 407 by having the inert gas flow into the accumulation unit 402 through the first inlet pipe 420 and the second inlet pipe 436. The accumulation unit 402 is also a component that discharges the inert gas accumulated inside the housing 407 from the first discharge pipe 422 and the second discharge pipe 438.

[0091] 6, the housing 407 is surrounded by a heat insulating member 408, which is an example of the heat insulating material in this embodiment. Therefore, the inert gas stored inside the storage unit 402 maintains its temperature.

[0092] 5 and 6, the storage unit 402 in this embodiment has an internal heating unit 404. The heating unit 404 is a component that heats the inert gas stored inside the storage unit 402, and is, for example, a heater that generates heat when power is supplied from a power source (not shown).

[0093] In this embodiment, all of the active members of the components of the preheating and cooling system 340 are controlled by the control unit 500. In other words, the first on-off valve 414, the first three-way valve 416, the second on-off valve 418, the second three-way valve 432, the third three-way valve 434, the third on-off valve 446, the MFC 412, the vacuum pump 406, and the heating unit 404 are all controlled by the control unit 500, thereby making it possible to switch the operating states.

[0094] In the substrate processing apparatus 10 of this embodiment, a preheating / cooling system 340 is provided for each load lock chamber 122. For example, since the substrate processing apparatus 10 of this embodiment has two load lock chambers 122 as shown in Fig. 1, a total of two preheating / cooling systems 340 are provided for each load lock chamber 122. In addition, the two preheating / cooling systems 340 may be shared by the tank 400.

[0095] In the above-described inert gas supply system 342, the supply source of the inert gas is not limited to the tank 400. For example, the supply pipe 410 may be configured to supply the inert gas by being connected to the inert gas supply pipe 251a or the inert gas supply pipe 271a instead of the tank 400.

[0096] Next, as one step in the semiconductor manufacturing process, a substrate processing step will be described in which the substrate processing apparatus 10 having the above-described configuration is used to process the substrate 200. In the following description, the operation of each component of the substrate processing apparatus 10 is controlled by a control unit 500.

[0097] Here, as the substrate processing step, a step of forming a thin film on a substrate 200 will be described with reference to FIGS. 7 and 8. Note that, as an example of the inert gas in this embodiment, N ２ A gas is used.

[0098] (Method for Manufacturing Semiconductor Device) The semiconductor manufacturing method according to this embodiment includes the steps of removing an unprocessed substrate 200 from a pod 100 and transferring the unprocessed substrate 200 to a load lock chamber 122, and preheating the unprocessed substrate 200 in the load lock chamber 122. The semiconductor manufacturing method according to this embodiment also includes the steps of transferring the unprocessed substrate 200 to a processing chamber 202, processing the unprocessed substrate 200 in the processing chamber 202, and transferring the processed substrate 200 to the load lock chamber 122. The semiconductor manufacturing method according to this embodiment also includes the steps of cooling the processed substrate 200 in the load lock chamber 122, and transferring the processed substrate 200 to an atmospheric transfer chamber and storing the processed substrate 200 in the pod 100. These steps are executed by the CPU 501 of the control unit 500 reading a program stored in the ROM 503 and following the procedure of the read program.

[0099] In the following procedure, unless otherwise specified, a case will be described in which the first unprocessed substrate 200 is processed in a production (lot production) in which a plurality of unprocessed substrates 200 are processed in sequence. The second and subsequent unprocessed substrates 200 will be described later.

[0100] (Step of Removing Unprocessed Substrate from Pod and Transferring Unprocessed Substrate to Load Lock Chamber) In the step of removing the unprocessed substrate 200 from the pod 100 and transferring the unprocessed substrate 200 to the load lock chamber 122, the pressure inside the load lock chamber 122 is switched to atmospheric pressure with the gate valve 128 and the gate valve 160 closed. Thereafter, the atmospheric transfer robot 124 removes the unprocessed substrate 200 from the pod 100 placed on the IO stage 105. After opening the gate valve 128, the atmospheric transfer robot 124 places the removed unprocessed substrate 200 on the substrate mounting table 150 of the load lock chamber 122. Then, the gate valve 128 of the load lock chamber 122 is closed.

[0101] (Step of Preheating Unprocessed Substrate in Load Lock Chamber) Subsequently, in the step of preheating the unprocessed substrate 200 in the load lock chamber 122, the control unit 500 preheats the unprocessed substrate 200. In this description, "preheating" refers to the process of heating the substrate 200 to a temperature that is lower than the temperature at which the substrate 200 is processed in the processing chamber 202 but higher than the ambient temperature. The procedure executed by the control unit 500 will be described with reference to FIG. 7. At the time the unprocessed substrate 200 is transferred to the load lock chamber 122 (before step S102), the first on-off valve 414, the second on-off valve 418, and the third on-off valve 446 are all closed.

[0102] First, in step S102, the control unit 500 evacuates the load lock chamber 122. More specifically, the control unit 500 starts the vacuum pump 406 and controls the third on-off valve 446 to open it. The control unit 500 also controls the second three-way valve 432 to connect the exhaust pipe 430 to the bypass pipe 440, and controls the third three-way valve 434 to connect the bypass pipe 440 to the exhaust pipe 442. As a result, the control unit 500 evacuates the fluid (atmosphere, such as air) within the load lock chamber 122 from the load lock chamber 122, creating a vacuum (pressure lower than atmospheric pressure) within the load lock chamber 122. The control unit 500 then proceeds to step S104.

[0103] Next, in step S104, the control unit 500 switches the flow path of the inert gas supply system 342. More specifically, the control unit 500 controls the first on-off valve 414 to open the first on-off valve 414, and controls the first three-way valve 416 to connect the supply pipe 410 and the first introduction pipe 420, and supplies N 2 to the accumulation unit 402. ２ The gas is allowed to flow in. Then, the control unit 500 proceeds to step S106.

[0104] Next, in step S106, the control unit 500 ２ The control unit 500 measures the gas temperature and determines whether it is equal to or higher than a predetermined temperature (threshold value). If the determination in step S106 is affirmative, the control unit 500 proceeds to step S110. On the other hand, if the determination in step S106 is negative, the control unit 500 proceeds to step S108.

[0105] Next, in step S108, the control unit 500 ２ More specifically, the control unit 500 controls the heating unit 404 to generate heat, and the N ２ The gas is heated. After a predetermined time has elapsed, the control unit 500 proceeds to step S106.

[0106] Next, in step S110, the control unit 500 transfers N ２ The supply of gas is started. More specifically, the control unit 500 opens the second on-off valve 418 to connect the storage unit 402 and the load lock chamber 122 through the first discharge pipe 422. In addition, the N ２ Gas is supplied to the storage unit 402 through the first inlet pipe 420, and the pressure inside the storage unit 402 exceeds the pressure inside the load lock chamber 122. ２ The gas flows into the load lock chamber 122. Then, the control unit 500 proceeds to step S112.

[0107] Next, in step S112, the control unit 500 determines whether the temperature of the unprocessed substrate 200 placed on the substrate placement table 150 of the load lock chamber 122 is equal to or higher than a predetermined temperature (threshold value). If the determination in step S112 is affirmative, the control unit 500 proceeds to step S114. On the other hand, if the determination in step S112 is negative, the control unit 500 repeats step S112. In other words, the control unit 500 continues to transfer N from the storage unit 402 to the load lock chamber 122 until the temperature of the unprocessed substrate 200 exceeds the predetermined temperature in step S112. ２ Turn on the gas.

[0108] Next, in step S114, the control unit 500 ２ More specifically, the control unit 500 controls the first on-off valve 414 and the second on-off valve 418 to close the first on-off valve 414 and the second on-off valve 418. As a result, the N 2 gas inside the load lock chamber 122 is ２ The gas is discharged.

[0109] (Step of Transferring Unprocessed Substrate to Processing Chamber) Subsequently, in the step of transferring the unprocessed substrate 200 to the processing chamber 202, the control unit 500 opens the gate valve 160 of the load lock chamber 122 and operates the vacuum transfer robot 112 to transfer the substrate 200 placed on the substrate mounting table 150 of the load lock chamber 122 to one of the processing chambers 202. After transferring the substrate 200 to the processing chamber 202, the control unit 500 retreats the vacuum transfer robot 112 to the outside of the processing vessel 203 and closes the gate valve 161 to seal the processing vessel 203. Thereafter, the control unit 500 raises the substrate mounting table 212 to place the substrate 200 on a substrate mounting surface provided on the substrate mounting table 212. Furthermore, by raising the substrate mounting table 212, the substrate 200 is raised to a processing position (substrate processing position) within the processing chamber 202.

[0110] Furthermore, when the substrate 200 is raised to the substrate processing position, the control unit 500 operates the exhaust system 223 to establish communication between the exhaust buffer chamber 209 and the vacuum pump 224. The exhaust system 223 adjusts the conductance of the exhaust piping to control the exhaust flow rate of the exhaust buffer chamber 209 by the vacuum pump 224, and maintains the processing chamber 202, which is in communication with the exhaust buffer chamber 209, at a predetermined pressure.

[0111] (Step of processing unprocessed substrate in processing chamber) Subsequently, in the step of processing the unprocessed substrate 200 in the processing chamber 202, the control unit 500 performs a film formation process on the substrate 200. More specifically, the control unit 500 first supplies power to the heater 213 embedded inside the substrate mounting table 212 on which the substrate 200 is placed, and controls the surface of the substrate 200 to reach a predetermined processing temperature.

[0112] Next, the control unit 500 alternately supplies a source gas (first gas) and a reactive gas (second gas) in accordance with a predetermined procedure (recipe) to form a desired film on the substrate 200. The supply amounts, supply timing, processing time, processing temperature, etc. of the source gas and reactive gas are determined appropriately by the recipe, which is a predetermined procedure.

[0113] (Step of Transferring Processed Substrate to Load Lock Chamber) Subsequently, in the step of transferring the processed substrate 200 to the load lock chamber 122, the control unit 500 transfers the processed substrate 200 from the processing chamber 202 to the load lock chamber 122 in the reverse order of the above steps. More specifically, the control unit 500 first lowers the substrate mounting table 212 from the substrate processing position to the substrate transfer position. Thereafter, the control unit 500 opens the gate valve 160 of the load lock chamber 122 and operates the vacuum transfer robot 112 to transfer the processed substrate 200 from the substrate mounting table 212 to the substrate mounting table 150 of the load lock chamber 122. At this time, if the load lock chamber 122 is at atmospheric pressure, it is switched to vacuum pressure.

[0114] (Step of Cooling the Processed Substrate in the Load Lock Chamber 122) Subsequently, in the step of cooling the processed substrate 200 in the load lock chamber 122, the control unit 500 cools the unprocessed substrate 200. The procedure executed by the control unit 500 will be described with reference to FIG. 8. Note that at the time when the processed substrate 200 is transported to the load lock chamber 122 (before step S202), the first on-off valve 414, the second on-off valve 418, and the third on-off valve 446 are all closed.

[0115] First, in step S202, the control unit 500 switches the flow path of the inert gas supply system 342. More specifically, the control unit 500 controls the first three-way valve 416 to disconnect the supply pipe 410 from the first introduction pipe 420, and switches the flow path so that the inert gas flows from the tank 400 to the load lock chamber 122 without passing through the accumulation unit 402. Then, the control unit 500 proceeds to step S204. Here, the inert gas is, for example, N ２ In this embodiment, the inert gas is N ２ It is called gas.

[0116] Next, in step S204, the control unit 500 transfers N ２ More specifically, the control unit 500 controls the first on-off valve 414 to start the supply of N ２ Gas is supplied to the load lock chamber 122 from a tank 400 .

[0117] The processed substrate 200 transferred from the processing chamber 202 has been heated to the processing temperature by the film forming process. ２ In other words, in step S204, the N 2 gas supplied from the tank 400 to the load lock chamber 122 ２ The gas cools the processed substrate 200. Then, the control unit 500 proceeds to step S206.

[0118] Next, in step S206, the control unit 500 ２The gas is transferred from the load lock chamber 122 to the storage unit 402. More specifically, the control unit 500 controls the second three-way valve 432 to connect the exhaust pipe 430 to the second inlet pipe 436, and controls the third three-way valve 434 to connect the bypass pipe 440 to the exhaust pipe 442. ２ As gas is supplied to the load lock chamber 122 through the supply line 410 and the pressure inside the load lock chamber 122 exceeds the reservoir 402, the N ２ The gas flows into the accumulation unit 402. Then, the control unit 500 proceeds to step S208.

[0119] Next, in step S208, the control unit 500 determines whether the temperature of the processed substrate 200 is equal to or higher than a predetermined temperature (threshold value). If the determination in step S208 is affirmative, the control unit 500 proceeds to step S210. On the other hand, if the determination in step S208 is negative, the control unit 500 proceeds to step S214.

[0120] Next, in step S210, the control unit 500 controls the N ２ If the determination in step S210 is affirmative, the control unit 500 proceeds to step S212. On the other hand, if the determination in step S210 is negative, the control unit 500 proceeds to step S208.

[0121] Next, in step S212, the control unit 500 ２ The control unit 500 switches the gas destination to the exhaust unit. More specifically, the control unit 500 controls the second three-way valve 432 to connect the exhaust pipe 430 and the bypass pipe 440, and controls the third on-off valve 446 to open the third on-off valve 446. The control unit 500 also controls the vacuum pump 406 to exhaust N 2 from the load lock chamber 122 through the exhaust pipe 442. ２ The control unit 500 then proceeds to step S208. ２If the storage section 402 is filled with gas, the supply to the storage section 402 is stopped and heated N ２ is discharged.

[0122] That is, in this embodiment, the control unit 500 performs the processes from step S208 to step S212 to transfer the processed substrate 200 to N ２ Cool with gas.

[0123] In step S214, the control unit 500 controls the N ２ More specifically, the control unit 500 controls the first on-off valve 414 to close the first on-off valve 414, thereby stopping the supply of N 2 gas supplied from the tank 400. ２ Stop the gas flow.

[0124] (Step of transporting the processed substrate to the atmospheric transfer chamber and storing the processed substrate in a pod) Subsequently, in the step of transporting the processed substrate 200 to the atmospheric transfer chamber 121 and storing the processed substrate 200 in the pod 100, the control unit 500 returns the pressure inside the load lock chamber to atmospheric pressure, and then opens the gate valve 128 of the load lock chamber 122 and operates the atmospheric transfer robot 124 to transport the processed substrate 200 to the atmospheric transfer chamber 121. In addition, the atmospheric transfer robot 124 stores the processed substrate 200 in the pod 100 placed on the IO stage 105.

[0125] In the semiconductor device manufacturing method of this embodiment, the first substrate 200 is processed through the above steps using the substrate processing apparatus 10. Note that in the semiconductor device manufacturing method of this embodiment, the processing steps for the second substrate 200 may be partially different from the processing procedure for the first unprocessed substrate 200 described above.

[0126] (Processing Steps for Second and Subsequent Substrates) Specifically, when processing the second unprocessed substrate 200, the first processed substrate 200 has been cooled and heated inert gas has been accumulated in the accumulation unit 402, so a negative determination may not be made in step S106 in Fig. 7. That is, when processing the second unprocessed substrate 200, high-temperature inert gas has been accumulated inside the accumulation unit 402 at the time the unprocessed substrate 200 is transferred to the load lock chamber 122 (before step S102), so there are cases where it is not necessary to heat the inert gas.

[0127] In other words, if the unprocessed substrate 200 is the second or subsequent substrate, the control unit 500 heats the second unprocessed substrate 200 by supplying the inert gas stored in the storage unit 402, which has been heated by cooling the first processed substrate 200, to the second unprocessed substrate 200.

[0128] The other steps are the same as those for the first substrate 200 .

[0129] 1, the substrate processing apparatus 10 in this embodiment has a plurality of (four in FIG. 1) processing chambers 202 and a plurality of (two in FIG. 1) load lock chambers 122, and therefore also has two accumulation units 402. Therefore, if the next substrate 200 is loaded while the unprocessed substrate 200 is being processed, for example, and heated inert gas has not accumulated in the accumulation unit 402 at the time the unprocessed substrate 200 is loaded into the load lock chamber 122, the procedure for the second unprocessed substrate 200 is the same as for the first substrate.

[0130] According to the above procedure, in the semiconductor device manufacturing method of this embodiment, the processed substrate 200 is cooled by the inert gas supplied to the load lock chamber 122. In other words, the inert gas supplied from the tank 400 without passing through the storage unit 402 is an example of a cooling fluid in this embodiment. In other words, the inert gas supplied from the tank 400 without passing through the storage unit 402 can be said to be supplied from the first supply unit. In other words, the inert gas supplied from the first supply unit is an example of a fluid that cools the heat-treated substrate 200.

[0131] In other words, the configuration in the load lock chamber 122 for supplying the inert gas to the substrate mounting table 150 is an example of a cooling unit configured in the substrate mounting table 150. That is, the load lock chamber 122 in this embodiment can be said to cool the processed substrate 200 by the cooling unit configured in the substrate mounting table 150.

[0132] Furthermore, the substrate mounting table 150 in the load lock chamber 122 is equipped with a cooling unit that cools the substrate, and the substrate is cooled by the cooling unit equipped in the substrate mounting table 150. The cooling unit is configured to allow a fluid that cools the substrate to flow, and an inert gas may be used as the fluid. In other words, the configuration in which an inert gas is supplied to the substrate mounting table 150 in the load lock chamber 122 is an example of a cooling unit configured in the substrate mounting table 150. Furthermore, the substrate may be cooled by the inert gas supplied to the load lock chamber 122 and the cooling unit configured in the substrate mounting table 150.

[0133] Furthermore, the control unit 500 according to this embodiment stores the inert gas inside the load lock chamber 122 in the storage unit 402 through the process control unit 522. More specifically, the inert gas inside the load lock chamber 122 is stored in the storage unit 402 by controlling the second three-way valve 432 to connect the exhaust pipe 430 and the second inlet pipe 436 and by controlling the third three-way valve 434 to connect the bypass pipe 440 and the exhaust pipe 442.

[0134] Furthermore, as described above, the processed substrate 200 has a higher temperature than the inert gas supplied to the load lock chamber 122, and therefore the inert gas supplied to the load lock chamber 122 is heated by the processed substrate 200. Therefore, the inert gas stored inside the storage unit 402 has a higher temperature than the inert gas supplied from the tank 400. In other words, the inert gas stored inside the storage unit 402 is an example of a fluid heated by cooling the heat-treated processed substrate 200 in this embodiment.

[0135] Furthermore, when a process for forming a thin film on a substrate 200 is performed using the substrate processing apparatus 10 according to this embodiment, the substrate 200 is transferred from the pod 100 to the load lock chamber 122 through the atmospheric transfer chamber and placed on the substrate placement table 150. However, the unprocessed substrate 200 placed on the substrate placement table 150 in the load lock chamber 122 is at the temperature outside the processing chamber 202, i.e., at room temperature.

[0136] Here, the control unit 500 according to this embodiment supplies the inert gas to the unprocessed substrate 200 placed on the substrate mounting table 150 from the supply pipe 410 via the process control unit 522, thereby supplying the inert gas to the processed substrate 200 at room temperature. More specifically, the control unit 500 controls the first three-way valve 416 to connect the upstream side of the supply pipe 410 to the first introduction pipe 420 side, and controls the second opening / closing valve 418 to open the first discharge pipe 422. As a result, the control unit 500 causes the inert gas supplied from the tank 400 to flow into the load lock chamber 122 via the accumulation unit 402.

[0137] Here, since the inert gas accumulated in the accumulation unit 402 is heated to a high temperature by performing the cooling operation on the processed substrate 200 as described above, the inert gas supplied to the load lock chamber 122 also becomes hot. In other words, the inert gas supplied via the accumulation unit 402 is an example of a fluid that heats the space within the load lock chamber 122 in this embodiment. In other words, the inert gas supplied via the accumulation unit 402 can be said to be supplied from the second supply unit. That is, the inert gas supplied from the second supply unit is an example of a fluid that heats the unprocessed substrate 200 that has not been heat-processed.

[0138] Furthermore, the control unit 500 according to this embodiment exhausts the inert gas inside the load lock chamber 122 to the atmosphere through the process control unit 522. More specifically, the control unit 500 controls the second three-way valve 432 to connect the exhaust pipe 430 to the bypass pipe 440, and controls the third three-way valve 434 to connect the bypass pipe 440 to the exhaust pipe 442, thereby allowing the inert gas to flow to the exhaust pipe 442. The control unit 500 also controls the third on-off valve 446 to open the exhaust pipe 442 to the outside, and operates the vacuum pump 406 to send the fluid inside the exhaust pipe 442 downstream and thereby exhaust it to the atmosphere.

[0139] In this way, when the substrate 200 loaded into the load lock chamber 122 is a processed substrate 200, the control unit 500 according to this embodiment supplies an inert gas from the first supply unit to cool the substrate 200. Furthermore, when the substrate 200 loaded into the load lock chamber 122 is an unprocessed substrate 200, the control unit 500 according to this embodiment supplies an inert gas from the second supply unit to heat the substrate 200. In other words, the control unit 500 according to this embodiment switches between the first supply unit and the second supply unit depending on the state of the substrate 200 loaded into the load lock chamber 122.

[0140] In addition, during the preheating operation, if the temperature of the inert gas inside the storage section 402 is lower than a predetermined temperature, the control section 500 may operate the heating section 404 to heat the inert gas inside the storage section 402.

[0141] According to this embodiment, one or more of the following effects are achieved.

[0142] (Actions and Effects) According to the substrate processing apparatus 10 of this embodiment, the amount of fluid used can be reduced by cooling the processed substrate 200 placed in the load lock chamber 122, accumulating the heated fluid in the accumulation section 402, and supplying the accumulated fluid to the load lock chamber 122 and using it to heat the unprocessed substrate 200 placed in the load lock chamber 122. Furthermore, according to the substrate processing apparatus 10 of this embodiment, by preheating the unprocessed substrate 200, the heating time of the substrate 200 in the processing chamber 202 can be shortened and the amount of power used to heat the substrate 200 can be reduced. Furthermore, according to the substrate processing apparatus 10 of this embodiment, the shortened heating time of the substrate 200 can also be contributed to improving productivity efficiency.

[0143] Furthermore, according to the substrate processing apparatus 10 of this embodiment, by using an inert gas as a fluid for cooling the processed substrate 200 or heating the unprocessed substrate 200, the influence on the surface of the substrate 200 can be suppressed.

[0144] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the amount of fluid used can be reduced by heating the unprocessed substrate 200 using the heated and held fluid stored in the storage unit 402. Furthermore, by preheating the unprocessed substrate 200 in the load lock chamber 122, it is possible to shorten the heating time of the substrate 200 when processing the substrate 200 in the processing chamber 202, which contributes to improving productivity.

[0145] Furthermore, according to the substrate processing apparatus 10 of this embodiment, by switching the discharge destination switching valve, unheated fluid can be exhausted to the atmospheric space, and heated fluid can be flowed to the accumulation section 402.

[0146] Furthermore, according to the substrate processing apparatus 10 of this embodiment, by switching the supply source switching valve, it is possible to flow heated fluid from the storage section 402 into the load lock chamber 122 to heat the unprocessed substrate 200, or to flow cooled fluid from the tank 400 through the supply pipe 410 into the load lock chamber 122 to cool the processed substrate 200.

[0147] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the influence of heating on the components inside the load lock chamber 122 can be suppressed by cooling the inside of the load lock chamber 122 .

[0148] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the substrate mounting table 150 is provided with a cooling unit, which, when used in conjunction with a cooling fluid, can contribute to reducing the cooling time of the heat-treated substrate 200 .

[0149] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the heat-treated substrate 200 is cooled with a fluid, thereby suppressing the influence on the surface of the substrate 200 .

[0150] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the fluid stored in the storage unit 402 is used to heat the inside of the load lock chamber 122, thereby reducing the amount of fluid used.

[0151] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the unprocessed substrate 200 is heated using the fluid stored in the storage section 402, thereby making it possible to reduce the amount of fluid used.

[0152] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the amount of heated fluid supplied into the load lock chamber 122 can be controlled by measuring the temperature inside the load lock chamber 122 .

[0153] Furthermore, according to the substrate processing apparatus 10 of this embodiment, the amount of heated fluid supplied into the load lock chamber 122 can be controlled by measuring the pressure inside the load lock chamber 122 .

[0154] Furthermore, according to the substrate processing apparatus 10 of this embodiment, an operator can check the state of the fluid supplied to the load lock chamber 122 .

[0155] Furthermore, the substrate processing apparatus 10 of this embodiment further includes a heating unit 404 that heats the fluid flowing from the substrate 200 to the container. This makes it possible to set the temperature of the fluid flowing from the storage unit 402 to the container to a desired value, thereby improving the quality of the substrate processing process.

[0156] In addition, the method for manufacturing a semiconductor device according to this embodiment includes the steps of: heat-treating a substrate 200 in a processing chamber 202; placing the processed substrate 200 removed from the processing chamber 202 in a container; cooling the processed substrate 200 placed in the container with a fluid supplied from a supply section; accumulating the fluid heated by cooling the processed substrate 200 in an accumulation section 402; and supplying the fluid accumulated in the accumulation section 402 to an unprocessed substrate 200 stored in the processing chamber 202 to heat the unprocessed substrate 200.

[0157] According to the semiconductor device manufacturing method of this embodiment, by preheating the unprocessed substrate in the load lock chamber 122, the heating time of the substrate 200 in the processing chamber 202 can be shortened, thereby improving productivity.

[0158] In addition, the program according to this embodiment causes the control unit 500 to execute the following steps: a procedure for heat-treating the substrate 200 in the processing chamber 202; a procedure for placing the processed substrate 200 removed from the processing chamber 202 in a container; a procedure for cooling the processed substrate 200 placed in the container with a fluid supplied from a supply unit; a procedure for cooling the processed substrate 200 and storing the heated fluid in the storage unit 402; and a procedure for supplying the fluid stored in the storage unit 402 to the unprocessed substrate 200 stored in the processing chamber 202 to heat the unprocessed substrate 200.

[0159] According to the program of this embodiment, by heating the unprocessed substrate in advance in the load lock chamber 122, it is possible to reduce the heating time of the substrate 200 in the processing chamber 202, thereby improving productivity.

[0160] In the above description, the fluid supplied from the tank 400 to the load lock chamber 122 is an inert gas, but the technology according to the present disclosure is not limited to this. For example, a process gas or compressed air may be supplied instead of an inert gas.

[0161] In the above description, the storage unit 402 has the housing 407 surrounded by the heat insulating member 408, but the technology according to the present disclosure is not limited to this. For example, the storage unit 402 may be configured without the heat insulating member 408.

[0162] In the above description, the inert gas exhaust system 344 includes the exhaust pipe 430, the second three-way valve 432, and the third three-way valve 434. However, the technology according to the present disclosure is not limited to this. For example, the inert gas exhaust system 344 may not include the second three-way valve 432 or the third three-way valve 434, and may instead include a pipe through which the fluid flows directly from the load lock chamber 122 to the storage unit 402, and a pipe through which the fluid is directly exhausted from the load lock chamber 122.

[0163] In the above description, the substrate 200 placed on the substrate mounting table 150 inside the load lock chamber 122 is heated or cooled by supplying a fluid into the load lock chamber 122. However, the technology according to the present disclosure is not limited to this. For example, the fluid may heat or cool the substrate 200 from outside the load lock chamber 122 via a heat conductive member.

[0164] In the above description, the substrate processing apparatus 10 has the temperature sensor 302 in the load lock chamber 122, but the technology according to the present disclosure is not limited to this. For example, the substrate processing apparatus 10 may not have the temperature sensor 302 in the load lock chamber 122, and the control unit 500 may control the flow rate of the fluid based on the elapse of a predetermined time.

[0165] In the above description, the substrate processing apparatus 10 has the pressure sensor 304 in the load lock chamber 122, but the technology according to the present disclosure is not limited to this. For example, the substrate processing apparatus 10 may not have the pressure sensor 304 in the load lock chamber 122, and the control unit 500 may control the flow rate of the fluid based on the passage of a predetermined time.

[0166] In the above description, the display unit 518 schematically displays each component of the substrate processing apparatus 10, but the technology according to the present disclosure is not limited to this. For example, the display unit 518 may not have a screen display, and the transport mechanism may be indicated by a lamp that is turned on or off. Also, for example, the substrate processing apparatus 10 may not have a display unit 518.

[0167] Furthermore, in the above description, the heating unit 404 is disposed inside the accumulation unit 402, but the technology according to the present disclosure is not limited to this. For example, the heating unit 404 may be provided in the first inlet pipe 420, the second inlet pipe 436, or the first discharge pipe 422, and heat the fluid flowing through the pipe. Furthermore, the heating unit 404 may be provided downstream of the connection portion of the supply pipe 410 with the first discharge pipe 422, and heat the fluid flowing through the supply pipe 410.

[0168] Furthermore, in the above description, the program is stored in a storage unit, but the method of providing the program according to the present disclosure is not limited to this. For example, the program may be recorded on a computer-readable recording medium and provided together with the recording medium.

[0169] These modifications also allow productivity to be improved by shortening the heating time of the substrate 200 .

[0170] In the above-described embodiment, an example of forming a film using a single-wafer substrate processing apparatus 10 that processes one or several substrates 200 at a time has been described. The present disclosure is not limited to the above-described embodiment, and can be suitably applied, for example, to a case where a film is formed using a batch-type substrate processing apparatus 10 that processes several substrates 200 at a time. In the above-described embodiment, an example of forming a film using a substrate processing apparatus 10 having a cold-wall type processing furnace has been described. The present disclosure is not limited to the above-described embodiment, and can be suitably applied to a case where a film is formed using a substrate processing apparatus 10 having a hot-wall type processing furnace.

[0171] When using these substrate processing apparatuses 10, the processes can be performed under the same processing procedures and conditions as those in the above-described embodiments and modifications, and the same effects as those in the above-described embodiments and modifications can be obtained.

[0172] [Other Modifications] Although each embodiment of the present disclosure has been specifically described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist thereof.

[0173] Furthermore, for example, in the above-described embodiments, a film formation process is exemplified as a process performed by a substrate processing apparatus, but the present disclosure is not limited thereto. That is, the present disclosure can be applied to film formation processes other than those exemplified in the embodiments, in addition to the film formation processes exemplified in the embodiments. Furthermore, the specific content of the substrate processing is not important, and the present disclosure can be applied to other substrate processing processes, such as annealing, diffusion, oxidation, and nitriding, in addition to film formation processes. Furthermore, the present disclosure can also be applied to other substrate processing devices, such as annealing, etching, oxidation, and nitriding devices, exposure, coating, drying, and heating devices, and plasma-based processing devices. The present disclosure may also include a mixture of these devices. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, or to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is also possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0174] 10 Substrate processing apparatus 122 Load lock chamber (container) 200 Substrate 202 Processing chamber 500 Control unit 342 Inert gas supply system (supply unit) 344 Inert gas exhaust system (exhaust unit) 402 Storage unit

Claims

1. A substrate processing apparatus comprising: a processing chamber for heat-treating a substrate; a container on which an untreated substrate to be carried into the processing chamber or a processed substrate carried out from the processing chamber is placed; a supply unit for supplying a fluid for heating the untreated substrate placed in the container or cooling the processed substrate; a discharge unit for discharging the fluid from the container; a storage unit for storing the heated fluid by cooling the processed substrate; and a control unit capable of controlling to supply the fluid stored in the storage unit to the container to heat the untreated substrate.

2. The substrate processing apparatus according to claim 1, wherein the fluid is an inert gas.

3. The substrate processing apparatus according to claim 1, wherein the storage unit has a heat insulating material for maintaining the temperature of the heated fluid.

4. The discharge unit includes a discharge pipe and a discharge destination switching valve, and the control unit is capable of controlling to store the fluid in the storage unit through the discharge pipe by switching the discharge destination switching valve. The substrate processing apparatus according to claim 1.

5. When the heat-treated processed substrate is carried into the container, the control unit is capable of controlling to supply the cooling fluid from the supply unit, and to store the fluid heated by cooling the heat-treated processed substrate in the storage unit by switching the discharge destination switching valve. The substrate processing apparatus according to claim 4.

6. When the untreated substrate is carried into the container, the control unit is capable of controlling to discharge the fluid inside the container from the discharge unit to the atmospheric space by switching the discharge destination switching valve. The substrate processing apparatus according to claim 4.

7. The supply unit includes a supply pipe connected to a fluid supply source and a supply source switching valve, and the control unit is capable of controlling to supply the heated fluid from the storage unit to the container through the supply pipe or to flow cold fluid from the fluid supply source to the container through the supply pipe by switching the supply source switching valve. The substrate processing apparatus according to claim 1.

8. The supply unit has a first supply unit for supplying the cooled fluid, and when the heat-treated processed substrate is carried into the container, the control unit is capable of controlling to supply fluid from the supply unit by switching the supply source switching valve of the first supply unit. The substrate processing apparatus according to claim 7.

9. The supply unit has a second supply unit that supplies the heated fluid. The control unit can control the switching of the supply source switching valve of the second supply unit to supply the fluid from the storage unit when the unprocessed substrate is carried into the container. The substrate processing apparatus according to claim 7.

10. The supply unit has a first supply unit that supplies the fluid for cooling the substrate and a second supply unit that supplies the fluid for heating the substrate. The control unit can control the switching to the first supply unit or the second supply unit according to the state of the substrate carried into the container. The substrate processing apparatus according to claim 1.

11. The container has a substrate mounting table for mounting the substrate. The cooling unit configured on the substrate mounting table and the fluid for cooling the substrate cool the processed substrate that has been heat-treated. The substrate processing apparatus according to claim 10.

12. The fluid supplied from the first supply unit is a fluid for cooling the processed substrate that has been heat-treated. The substrate processing apparatus according to claim 10.

13. The fluid supplied from the second supply unit is a fluid for heating the space inside the container. The substrate processing apparatus according to claim 10.

14. The fluid supplied from the second supply unit is a fluid for heating the unprocessed substrate that has not been heat-treated. The substrate processing apparatus according to claim 10.

15. It has a temperature sensor for measuring the temperature inside the container. The control unit can control the flow rate of the fluid according to the temperature measured by the temperature sensor. The substrate processing apparatus according to claim 1.

16. It has a pressure sensor for measuring the pressure inside the container. The control unit can control the flow rate of the fluid according to the pressure measured by the pressure sensor. The substrate processing apparatus according to claim 1.

17. It further has a display unit capable of displaying the operating state of the container. The display unit can display the state of the fluid supplied into the container. The substrate processing apparatus according to claim 1.

18. The substrate processing apparatus according to claim 1 further includes a heating unit for heating the fluid supplied from the storage unit to the container.

19. A method for manufacturing a semiconductor device, comprising: a step of heat-treating a substrate in a processing chamber; a step of placing the heat-treated substrate carried out from the processing chamber on a container; a step of cooling the heat-treated substrate placed in the container with a fluid supplied from a supply unit; a step of accumulating the fluid heated by cooling the heat-treated substrate in an accumulation unit; and a step of supplying the fluid accumulated in the accumulation unit to an untreated substrate stored in the container to heat the untreated substrate.

20. A program for causing a computer to execute the following steps on a substrate processing apparatus: a procedure of heat-treating a substrate in a processing chamber; a procedure of placing the heat-treated substrate carried out from the processing chamber on a container; a procedure of cooling the heat-treated substrate placed in the container with a fluid supplied from a supply unit; a procedure of accumulating the fluid heated by cooling the heat-treated substrate in an accumulation unit; and a procedure of supplying the fluid accumulated in the accumulation unit to an untreated substrate stored in the container to heat the untreated substrate.

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