High-frequency module

Abstract

A high-frequency module (1) comprises: a module baseboard (90); a power amplifier (11) disposed on the module baseboard (90); a filter (31) disposed on the module baseboard (90), having a passband including a transmission band of a first FDD band (band A) corresponding to a first power class, and connected to the power amplifier (11); and a filter (32) disposed on the module baseboard (90) and having a passband including a transmission band of a second FDD band (band B) corresponding to a second power class defined by maximum output power lower than the first power class, a first TDD band (band B) corresponding to the first power class, or a second TDD band (band B) corresponding to the second power class. The filter (32) is disposed between the power amplifier (11) and the filter (31) in a plan view of the module baseboard (90).

Description

High-frequency module

[0001] The present invention relates to a high-frequency module.

[0002] In 3GPP (registered trademark) and the like, use in frequency division duplex (FDD) bands of power classes (e.g., power classes 2, 1.5, 1, etc.) defined by higher maximum output power than conventional ones is being considered.

[0003] Japanese Patent Application Laid-Open No. 2017-063315

[0004] However, if the high-frequency circuit described in Patent Document 1 allows a higher maximum output power in the FDD band than conventionally, the characteristics of the filter may be deteriorated due to heat.

[0005] Therefore, the present invention provides a high-frequency module that can suppress deterioration of filter characteristics due to heat.

[0006] A high-frequency circuit according to one aspect of the present invention includes a module substrate, a first power amplifier arranged on the module substrate, a first filter arranged on the module substrate and having a passband including a transmission band of a first FDD band corresponding to a first power class and connected to the first power amplifier, and a second filter arranged on the module substrate and having a passband including a transmission band of a second FDD band corresponding to a second power class defined by a maximum output power lower than the first power class, a first TDD band corresponding to the first power class, or a second TDD band corresponding to the second power class, wherein the second filter is arranged between the first power amplifier and the first filter when viewed on a plane of the module substrate.

[0007] According to the present invention, deterioration of filter characteristics due to heat can be suppressed.

[0008] FIG. 1 is a circuit configuration diagram of a communication device according to a first embodiment. FIG. 2 is a plan view of a high-frequency module according to the first embodiment. FIG. 3 is a plan view of a high-frequency module according to the first embodiment. FIG. 4 is a cross-sectional view of the high-frequency module according to the first embodiment. FIG. 5A is a partial cross-sectional view of a filter according to the first embodiment. FIG. 5B is a partial cross-sectional view of a filter according to the first embodiment. FIG. 5C is a partial cross-sectional view of a filter according to the first embodiment. FIG. 6 is a plan view of a high-frequency module according to a first modified example of the first embodiment. FIG. 7 is a plan view of a high-frequency module according to a second modified example of the first embodiment. FIG. 8 is a circuit configuration diagram of a communication device according to the second embodiment. FIG. 9 is a plan view of a high-frequency module according to the second embodiment. FIG. 10 is a circuit configuration diagram of a communication device according to a third embodiment. FIG. 11 is a plan view of a high-frequency module according to the third embodiment. FIG. 12 is a plan view of a high-frequency module according to the third embodiment. FIG. 13 is a plan view of a high-frequency module according to a first modified example of the third embodiment.

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, arrangements and connection forms of the components shown in the following embodiments are merely examples and are not intended to limit the present invention.

[0010] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0011] In the following drawings, the x-axis and y-axis are axes that are orthogonal to each other on a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape in a plan view, the x-axis is parallel to a first side of the module substrate, and the y-axis is parallel to a second side of the module substrate that is orthogonal to the first side. The z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0012] In the following description of the circuit configuration, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. "A is switchably connected to B" means that the connection and disconnection between A and B can be switched, and A is connected to B via a switch. "A is connected to B" includes "A is switchably connected to B." "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and C is arranged in series in the path connecting A and B. "Path connecting A and B" means a path made up of a conductor electrically connecting A to B.

[0013] "Terminal" means a point where a conductor within an element terminates. Note that terminal is understood to mean any point on the conductor between elements or the entire conductor, not just a single point, provided the impedance of the conductor between elements is sufficiently low.

[0014] The "passband of a filter" is defined as the portion of the frequency spectrum transmitted by the filter over which the output power is not attenuated by more than 3 dB below the maximum output power. The upper and lower ends of the passband of a bandpass filter are therefore identified as the higher and lower frequencies of the two points at which the output power is attenuated by 3 dB below the maximum output power.

[0015] The term "transmission band" refers to a frequency band used for transmission in a communication device, and the term "reception band" refers to a frequency band used for reception in a communication device. For example, in an FDD band, different frequency bands (uplink band and downlink band) are used as the transmission band and the reception band. For example, in a time division duplex (TDD) band, the same frequency band is used as the transmission band and the reception band.

[0016] "Power class" refers to a classification of the output power of a user equipment (UE) defined by its maximum output power, and the smaller the power class value, the higher the maximum output power allowed. For example, 3GPP defines power classes 1, 1.5, 2, and 3. Specifically, power class 1 defines the maximum output power as 31 dBm. power class 1.5 defines the maximum output power as 29 dBm. power class 2 defines the maximum output power as 26 dBm. power class 3 defines the maximum output power as 23 dBm.

[0017] The maximum output power of a UE is defined as the maximum output power at the antenna terminal. The maximum output power of a UE is measured using a method defined by 3GPP or the like. For example, the maximum output power is measured by measuring the radiated power at the antenna. Instead of measuring the radiated power, the maximum output power of the antenna can also be measured by providing a terminal near the antenna and connecting a measuring instrument (e.g., a spectrum analyzer) to the terminal.

[0018] The "band corresponding to a power class" refers to a frequency band in which the power class can be used, and is defined by standards, etc. For example, in 3GPP, n1, n2, n3, n5, n8, n13, n25, n26, n28, n66, n71, n85, etc. are being considered as FDD bands for 5G NR corresponding to power class 2.

[0019] "A component is disposed on a substrate" includes a component being disposed on the main surface of the substrate and a component being disposed within the substrate. "A component is disposed on the main surface of the substrate" includes a component being disposed in contact with the main surface of the substrate, as well as a component being disposed above the main surface without contacting the main surface (for example, a component being stacked on another component disposed in contact with the main surface). "A component is disposed on the main surface of the substrate" may also include a component being disposed in a recess formed in the main surface. "A component is disposed within the substrate" includes a component being encapsulated within a module substrate, as well as a component being entirely disposed between both main surfaces of the substrate but partially not covered by the substrate, and a component being partially disposed within the substrate.

[0020] "A is located between B and C" means that at least one of multiple line segments connecting any point in B and any point in C passes through A. "A is closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Conversely, "A is farther from C than B" means that the distance between A and C is longer than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment among multiple line segments connecting any point in A (B) and any point in C.

[0021] The "planar view of the module substrate" means viewing an object by orthogonal projection onto a plane parallel to the main surface of the module substrate from above the module substrate. In other words, the "planar view of the module substrate" means viewing an object by orthogonal projection onto the xy plane from the positive side of the z axis.

[0022] The "band gap of a semiconductor material" refers to the energy difference between the top of the valence band and the bottom of the conduction band in a semiconductor material. The band gap is a value specific to a semiconductor material and is determined by detecting the semiconductor material.

[0023] Terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "rectangle," and numerical ranges do not only indicate the strict meaning, but also include a substantially equivalent range, for example, an error of a few percent.

[0024] (First Embodiment) A first embodiment will be described. A communication device 5 according to this embodiment can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in UEs in a cellular network (also referred to as a mobile network), such as mobile phones, smartphones, tablet computers, and wearable devices. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity in a wireless access point or a wireless hotspot.

[0025] The circuit configuration of a communication device 5 and a high-frequency module 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a circuit configuration diagram of a communication device 5 according to this embodiment.

[0026] 1 is an exemplary circuit configuration, and the communication device 5 and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 and the high-frequency module 1 provided below should not be interpreted as limiting.

[0027] [1.1 Circuit Configuration of Communication Device 5] First, the circuit configuration of a communication device 5 according to this embodiment will be described with reference to Fig. 1. The communication device 5 includes a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0028] The high-frequency module 1 can transmit high-frequency signals between the antenna 2 and the RFIC 3. The circuit configuration of the high-frequency module 1 will be described later.

[0029] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1. The antenna 2 can receive a high-frequency signal from the high-frequency module 1 and transmit it to the outside of the communication device 5. The antenna 2 can also receive a high-frequency signal from the outside of the communication device 5 and output it to the high-frequency module 1. The antenna 2 does not have to be included in the communication device 5. The communication device 5 may also include one or more antennas in addition to the antenna 2.

[0030] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 can perform signal processing on a transmission signal input from the BBIC 4, such as by up-conversion, and output the high-frequency transmission signal generated by the signal processing to the high-frequency module 1. Furthermore, the RFIC 3 can perform signal processing on a high-frequency reception signal input via the reception path of the high-frequency module 1, such as by down-conversion, and output the reception signal generated by the signal processing to the BBIC 4. The RFIC 3 may also have a control unit that controls switches, power amplifiers, and the like included in the high-frequency module 1. Note that some or all of the functions of the RFIC 3 as a control unit may be included outside the RFIC 3, such as in the BBIC 4 or the high-frequency module 1.

[0031] The BBIC 4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signals transmitted by the high-frequency module 1. The signals processed by the BBIC 4 include, for example, image signals for image display and / or audio signals for calls via a speaker. The BBIC 4 does not necessarily have to be included in the communication device 5.

[0032] [1.2 Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Fig. 1. The high-frequency module 1 includes a power amplifier 11, a low-noise amplifier 21, filters 31, 32, 33, 34, 35, and 36, matching circuits 41, 42, 43, 44, 45, and 46, switch circuits 50 and 51, an antenna connection terminal 100, a high-frequency input terminal 111, and a high-frequency output terminal 121.

[0033] The antenna connection terminal 100 is an external connection terminal of the high-frequency module 1. The antenna connection terminal 100 is connected to the antenna 2 outside the high-frequency module 1, and is connected to the switch circuit 50 inside the high-frequency module 1. This allows the high-frequency module 1 to supply a transmission signal to the antenna 2 and receive a reception signal from the antenna 2 via the antenna connection terminal 100.

[0034] The radio frequency input terminal 111 is an external connection terminal of the radio frequency module 1. The radio frequency input terminal 111 is connected to the RFIC 3 outside the radio frequency module 1, and is connected to the power amplifier 11 inside the radio frequency module 1. This allows the radio frequency module 1 to supply the transmission signal supplied from the RFIC 3 via the radio frequency input terminal 111 to the power amplifier 11.

[0035] The radio frequency output terminal 121 is an external connection terminal of the radio frequency module 1. The radio frequency output terminal 121 is connected to the RFIC 3 outside the radio frequency module 1, and is connected to the low noise amplifier 21 inside the radio frequency module 1. This allows the radio frequency module 1 to supply the received signal amplified by the low noise amplifier 21 to the RFIC 3 via the radio frequency output terminal 121.

[0036] The power amplifier 11 is an example of a first power amplifier, and is connected between the radio frequency input terminal 111 and the filters 31 to 35. Specifically, the input terminal of the power amplifier 11 is connected to the radio frequency input terminal 111. On the other hand, the output terminal of the power amplifier 11 is switchably connected to the filters 31 to 35 via a matching circuit 46 and a switch circuit 51. The power amplifier 11 can amplify a transmission signal supplied from the RFIC 3 via the radio frequency input terminal 111, using power supplied from a power source (not shown).

[0037] Note that a part or all of the power amplifier 11 does not have to be included in the high-frequency module 1. In this case, a part or all of the power amplifier 11 may be connected between the RFIC 3 and the high-frequency input terminal 111, or may be included in the RFIC 3.

[0038] The low-noise amplifier 21 is connected between the filter 36 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the filter 36. On the other hand, the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal that has passed through the filter 36 using power supplied from a power supply (not shown).

[0039] Note that a part or all of the low-noise amplifier 21 may not be included in the high-frequency module 1. In this case, a part or all of the low-noise amplifier 21 may be connected between the high-frequency output terminal 121 and the RFIC 3, or may be included in the RFIC 3.

[0040] The filter 31 is an example of a first filter, and has a passband that includes the transmission band of Band A. The filter 31 is connected between the antenna connection terminal 100 and the power amplifier 11. Specifically, one end of the filter 31 is switchably connected to the antenna connection terminal 100 via a matching circuit 41 and a switch circuit 50. Meanwhile, the other end of the filter 31 is switchably connected to the power amplifier 11 via a switch circuit 51 and a matching circuit 46. The filter 31 has power durability corresponding to a first power class that is defined by a higher maximum output power.

[0041] The first power class is a power class defined by a maximum output power higher than that of the second power class. The second power class is a power class defined by a maximum output power lower than that of the first power class. As the first power class, for example, power class 2, power class 1.5, or power class 1 is used. As the second power class, for example, power class 3 is used. Note that if a new power class is defined in the standard, the new power class may be used as the first power class or the second power class depending on the maximum output power of the new power class.

[0042] The filter 32 is an example of a second filter, and has a pass band that includes the transmission band of band B. The filter 32 is connected between the antenna connection terminal 100 and the power amplifier 11. Specifically, one end of the filter 32 is switchably connected to the antenna connection terminal 100 via a matching circuit 42 and a switch circuit 50. On the other hand, the other end of the filter 32 is switchably connected to the power amplifier 11 via a switch circuit 51 and a matching circuit 46.

[0043] The filter 33 is an example of a third filter, and has a passband that includes the transmission band of band C. The filter 33 is connected between the antenna connection terminal 100 and the power amplifier 11. Specifically, one end of the filter 33 is switchably connected to the antenna connection terminal 100 via a matching circuit 43 and a switch circuit 50. Meanwhile, the other end of the filter 33 is switchably connected to the power amplifier 11 via a switch circuit 51 and a matching circuit 46. The filter 33 has power durability corresponding to a first power class that is defined by a higher maximum output power. Note that the filter 33 does not necessarily have to be included in the high-frequency module 1.

[0044] The filter 34 is an example of a fourth filter, and has a passband that includes the transmission band of band D. The filter 34 is connected between the antenna connection terminal 100 and the power amplifier 11. Specifically, one end of the filter 34 is switchably connected to the antenna connection terminal 100 via a matching circuit 44 and a switch circuit 50. Meanwhile, the other end of the filter 34 is switchably connected to the power amplifier 11 via a switch circuit 51 and a matching circuit 46. The filter 34 has power durability corresponding to the first power class. Note that the filter 34 does not necessarily have to be included in the high-frequency module 1.

[0045] The filter 35 is an example of a fifth filter, and has a pass band that includes the transmission band of band E. The filter 35 is connected between the antenna connection terminal 100 and the power amplifier 11. Specifically, one end of the filter 35 is switchably connected to the antenna connection terminal 100 via a matching circuit 45 and a switch circuit 50. On the other hand, the other end of the filter 35 is switchably connected to the power amplifier 11 via a switch circuit 51 and a matching circuit 46. The filter 35 does not necessarily have to be included in the high-frequency module 1.

[0046] The filter 36 is an example of a sixth filter, and has a pass band that includes the reception band of band A. The filter 36 is connected between the antenna connection terminal 100 and the low-noise amplifier 21. Specifically, one end of the filter 36 is switchably connected to the antenna connection terminal 100 via a matching circuit 41 and a switch circuit 50. On the other hand, the other end of the filter 36 is connected to the low-noise amplifier 21.

[0047] Bands A to E are frequency bands for communication systems built using radio access technologies (RATs). Bands A to E are predefined by standardization organizations (e.g., 3GPP and the Institute of Electrical and Electronics Engineers (IEEE)). Examples of communication systems include 5GNR (5th Generation New Radio) systems, LTE (Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

[0048] Band A is an example of a first FDD band and is an FDD band corresponding to the first power class. For example, n1, n3, n8, n26, n28, or n66 for 5G NR is used as Band A. Note that Band A is not limited to these. For example, an LTE band may be used as Band A.

[0049] Band B is an example of the second FDD band, the first TDD band, and the second TDD band, and is an FDD band corresponding to the second power class (second FDD band), a TDD band corresponding to the first power class (first TDD band), or a TDD band corresponding to the second power class (second TDD band). For example, n12, n13, n40, or n41 for 5G NR is used as Band B. Note that Band B is not limited to these. For example, an LTE band may be used as Band B.

[0050] Band C is an example of a third FDD band and is an FDD band corresponding to the first power class. A frequency band different from Band A is used as Band C, such as n1, n3, n8, n26, n28, or n66 for 5G NR. Note that Band C is not limited to these. For example, an LTE band may be used as Band C.

[0051] Band D is an example of a fourth FDD band and is an FDD band corresponding to the first power class. A frequency band different from bands A and C is used as band D, for example, n1, n3, n8, n26, n28, or n66 for 5G NR. Note that band D is not limited to these. For example, an LTE band may be used as band D.

[0052] Band E is an example of the fifth FDD band, the third TDD band, and the fourth TDD band, and is an FDD band (fifth FDD band) corresponding to the second power class, a TDD band (third TDD band) corresponding to the first power class, or a TDD band (fourth TDD band) corresponding to the second power class. A frequency band different from Band B is used as Band E, and for example, n12, n13, n40, or n41 for 5G NR is used. Note that Band E is not limited to these. For example, an LTE band may be used as Band E.

[0053] The matching circuit (matching network) 41 is connected between the switch circuit 50 and the filters 31 and 36 and can achieve impedance matching between the switch circuit 50 and the filters 31 and 36. The matching circuit 41 may include, for example, an inductor and / or a capacitor (so-called shunt inductor and / or shunt capacitor) connected between a path connecting the switch circuit 50 and the filters 31 and 36 and ground. The matching circuit 41 may also include, for example, an inductor and / or a capacitor (so-called series inductor and / or series capacitor) connected between the switch circuit 50 and the filters 31 and 36. Note that the matching elements included in the matching circuit 41 are not limited to inductors and / or capacitors. The matching circuit 41 does not necessarily have to be included in the high-frequency module 1.

[0054] The matching circuit (matching network) 42 is connected between the switch circuit 50 and the filter 32 and can achieve impedance matching between the switch circuit 50 and the filter 32. The matching circuit 42 may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 42 are not limited to inductors and / or capacitors. Furthermore, the matching circuit 42 does not necessarily have to be included in the high-frequency module 1.

[0055] The matching circuit (matching network) 43 is connected between the switch circuit 50 and the filter 33 and can achieve impedance matching between the switch circuit 50 and the filter 33. The matching circuit 43 may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 43 are not limited to inductors and / or capacitors. Furthermore, the matching circuit 43 does not necessarily have to be included in the high-frequency module 1.

[0056] The matching circuit (matching network) 44 is connected between the switch circuit 50 and the filter 34 and can achieve impedance matching between the switch circuit 50 and the filter 34. The matching circuit 44 may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 44 are not limited to inductors and / or capacitors. Furthermore, the matching circuit 44 does not necessarily have to be included in the high-frequency module 1.

[0057] The matching circuit (matching network) 45 is connected between the switch circuit 50 and the filter 35 and can achieve impedance matching between the switch circuit 50 and the filter 35. The matching circuit 45 may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 45 are not limited to inductors and / or capacitors. Furthermore, the matching circuit 45 does not necessarily have to be included in the high-frequency module 1.

[0058] The matching circuit (matching network) 46 is connected between the switch circuit 51 and the power amplifier 11, and can achieve impedance matching between the switch circuit 51 and the power amplifier 11. The matching circuit 46 may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 46 are not limited to inductors and / or capacitors. Furthermore, the matching circuit 46 does not necessarily have to be included in the high-frequency module 1.

[0059] The switch circuit 50 is connected between the antenna connection terminal 100 and the filters 31 to 36. Specifically, the switch circuit 50 includes a common terminal 500 and selection terminals 501, 502, 503, 504, and 505. The common terminal 500 is connected to the antenna connection terminal 100. The selection terminal 501 is connected to the filters 31 and 36 via a matching circuit 41. The selection terminal 502 is connected to the filter 32 via a matching circuit 42. The selection terminal 503 is connected to the filter 33 via a matching circuit 43. The selection terminal 504 is connected to the filter 34 via a matching circuit 44. The selection terminal 505 is connected to the filter 35 via a matching circuit 45.

[0060] In this connection configuration, the switch circuit 50 can exclusively connect the common terminal 500 to the selection terminals 501 to 505, for example, based on a digital control signal from the RFIC 3. That is, in the switch circuit 50, the common terminal 500 is selectively connected to the selection terminals 501 to 505. The switch circuit 50 is configured, for example, as an SP5T type switch circuit. Note that the switch circuit 50 does not necessarily have to be included in the high-frequency module 1.

[0061] The switch circuit 51 is an example of a first switch circuit and is connected between the filters 31 to 35 and the power amplifier 11. Specifically, the switch circuit 51 includes a common terminal 510 and selection terminals 511, 512, 513, 514, and 515. The common terminal 510 is an example of a first common terminal and is connected to the power amplifier 11 via the matching circuit 46. The selection terminal 511 is an example of a first selection terminal and is connected to the filter 31. The selection terminal 512 is an example of a second selection terminal and is connected to the filter 32. The selection terminal 513 is an example of a third selection terminal and is connected to the filter 33. The selection terminal 514 is an example of a fourth selection terminal and is connected to the filter 34. The selection terminal 515 is an example of a fifth selection terminal and is connected to the filter 35.

[0062] In this connection configuration, the switch circuit 51 can exclusively connect the common terminal 510 to the selection terminals 511 to 515, for example, based on a digital control signal from the RFIC 3. That is, in the switch circuit 51, the common terminal 510 is selectively connected to the selection terminals 511 to 515. The switch circuit 51 is configured, for example, as an SP5T type switch circuit. Note that the switch circuit 51 does not necessarily have to be included in the high-frequency module 1. In this case, the high-frequency module 1 may further include at least one power amplifier.

[0063] [1.3 Mounting Example of High-Frequency Module 1] Next, a mounting example of the high-frequency module 1 having the circuit configuration described above will be described with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the high-frequency module 1 according to this embodiment. FIG. 3 is a plan view of the high-frequency module 1 according to this embodiment, seen through the main surface 90b of the module substrate 90 from the positive side of the z-axis. FIG. 4 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in FIG. 4 is taken along line iv-iv in FIGS. 2 and 3.

[0064] 2 to 4, some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with such a symbol. Also, in Figures 2 and 3, the resin members 91 and 92 that cover the multiple circuit components and the metal shield 93 that covers the resin members 91 and 92 are not shown.

[0065] 2 to 4 show an example of implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

[0066] In addition to the multiple circuit components shown in FIG. 1, the high-frequency module 1 includes metal members 61 and 62, a module substrate 90, resin members 91 and 92, a metal shield 93, and multiple external connection terminals 94.

[0067] The module substrate 90 has opposing main surfaces 90a and 90b. The main surface 90a is an example of a first main surface and may also be called an upper surface or front surface. The main surface 90b is an example of a second main surface and may also be called a lower surface or back surface. Wiring, via conductors, and the like are formed within the module substrate 90 and on the main surfaces 90a and 90b, but are not shown in the drawings.

[0068] The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0069] The resin member 91 covers at least a portion of the main surface 90a of the module substrate 90 and the circuit components on the main surface 90a. The resin member 91 does not cover at least a portion of the top surface of each of the filters 31 to 36; the top surfaces of the filters 31 to 36 are exposed from the resin member 91 and are in contact with the metal shield 93. The resin member 91 may be made of, for example, epoxy resin, but is not limited to, a material. The resin member 91 has the function of ensuring reliability, such as mechanical strength and moisture resistance, of the circuit components on the main surface 90a. The resin member 91 does not necessarily have to be included in the high-frequency module 1.

[0070] The resin member 92 covers at least a portion of the main surface 90b of the module substrate 90 and the circuit components on the main surface 90b. The resin member 92 does not have to cover at least a portion of the top surface of the integrated circuit 20. That is, at least a portion of the top surface of the integrated circuit 20 may be exposed from the resin member 92. The resin member 92 may be made of, for example, epoxy resin, but is not limited to, a material. The resin member 92 has the function of ensuring reliability, such as mechanical strength and moisture resistance, of the circuit components on the main surface 90b. The resin member 92 does not necessarily have to be included in the high-frequency module 1.

[0071] The metal shield 93 is a thin metal film formed by, for example, a sputtering method. As shown in FIG. 4, the metal shield 93 covers the surfaces of the resin members 91 and 92. The metal shield 93 also covers the top surfaces of the filters 31 to 36. The metal shield 93 is connected to ground, and can prevent external noise from entering the high-frequency module 1 and noise generated in the high-frequency module 1 from interfering with other modules or other devices.

[0072] The plurality of external connection terminals 94 are arranged on the main surface 90b of the module substrate 90. The plurality of external connection terminals 94 include the antenna connection terminal 100, the radio frequency input terminal 111, and the radio frequency output terminal 121 shown in FIG. 1 . The plurality of external connection terminals 94 further includes a ground terminal connected to ground. The plurality of external connection terminals 94 are electrically connected to input / output terminals and / or ground terminals on a motherboard (not shown) arranged in the negative direction of the z-axis of the radio frequency module 1. The plurality of external connection terminals 94 may be, but are not limited to, copper electrodes or solder electrodes.

[0073] Here, the components arranged on the main surfaces 90a and 90b of the module substrate 90 will be described with reference to FIGS.

[0074] The power amplifier 11 (PA) is disposed on the main surface 90a of the module substrate 90. The power amplifier 11 may be configured as a heterojunction bipolar transistor (HBT) and may be manufactured using a semiconductor material. Examples of the semiconductor material that may be used include silicon germanium (SiGe) and gallium arsenide (GaAs). The amplifying transistor of the power amplifier 11 is not limited to an HBT. For example, the power amplifier 11 may be configured as a high electron mobility transistor (HEMT) or a metal-semiconductor field effect transistor (MESFET). In this case, gallium nitride (GaN) or silicon carbide (SiC) may be used as the semiconductor material.

[0075] The filter 31 (A-Tx (PC2-FDD)) is disposed on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the filter 31 is disposed farther from the power amplifier 11 than the filters 32, 35, and 36. That is, the distance between the filter 31 and the power amplifier 11 is longer than the distance between the power amplifier 11 and each of the filters 32, 35, and 36. Furthermore, in a plan view of the module substrate 90, the filter 31 is closer to the outer edge of the module substrate 90 than the filter 36. That is, the distance between the filter 31 and the outer edge of the module substrate 90 is shorter than the distance between the filter 36 and the outer edge of the module substrate 90.

[0076] The filter 32 (B-Tx (PC3-FDD / TDD, PC2-TDD)) is disposed on the main surface 90a of the module substrate 90. The filter 32 is disposed between the power amplifier 11 and the filters 31, 33, 34, and 36 in a plan view of the module substrate 90.

[0077] The filter 33 (C-Tx(PC2-FDD)) is disposed on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the filter 33 is farther from the power amplifier 11 than the filters 32 and 35. In other words, the distance between the filter 33 and the power amplifier 11 is longer than the distance between each of the filters 32 and 35 and the power amplifier 11.

[0078] The filter 34 (D-Tx (PC2-FDD)) is disposed on the main surface 90a of the module substrate 90. In a plan view of the module substrate 90, the filter 34 is farther from the power amplifier 11 than the filters 32 and 35. In other words, the distance between the filter 34 and the power amplifier 11 is longer than the distance between each of the filters 32 and 35 and the power amplifier 11.

[0079] The filter 35 (E-Tx (PC3-FDD / TDD, PC2-TDD)) is disposed on the main surface 90a of the module substrate 90. The filter 35 is disposed between the power amplifier 11 and the filters 31, 33, 34, and 36 in a plan view of the module substrate 90.

[0080] The filter 36 (A-Rx) is disposed on the main surface 90a of the module substrate 90. The filter 36 is disposed between the power amplifier 11 and the filter 31 when the module substrate 90 is seen in a plan view.

[0081] The top surface of each of the filters 31 to 36 is exposed from the resin member 91 and is in contact with the metal shield 93. Note that some or all of the filters 31 to 36 do not have to be in contact with the metal shield 93. Alternatively, only a portion of the top surface may be in contact with the metal shield 93.

[0082] The filters 31 to 36 are implemented as surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC resonator filters, dielectric resonator filters, or any combination thereof. For example, the filters 31, 33, and 34 may be BAW filters with higher power handling capabilities, and the remaining filters may be SAW filters. However, the filters 31 to 36 are not limited to these.

[0083] The matching circuits 41 to 45 (MN(ANT)) and the matching circuit 46 (MN(PA)) are disposed on the main surface 90a of the module substrate 90 and are implemented, for example, as chip inductors and / or chip capacitors. The chip inductors and / or chip capacitors refer to surface mount devices (SMDs) that constitute inductors and / or capacitors. Note that the matching circuits 41 to 46 are not limited to chip inductors and / or chip capacitors. For example, some or all of the matching circuits 41 to 46 may be implemented by wiring patterns formed on the module substrate 90.

[0084] The metal member 61 is a shield wall erected on the main surface 90a of the module substrate 90, and its tip is connected to the metal shield 93. In a plan view of the module substrate 90, the metal member 61 is disposed between the power amplifier 11 and the filters 31, 33, 34, and 36. Note that the metal member 61 is not limited to a metal wall or a metal plate. For example, the metal member 61 may be a plurality of bonding wires or a plurality of post electrodes.

[0085] The metal member 62 is a shield wall erected on the main surface 90a of the module substrate 90, and its tip is connected to the metal shield 93. The metal member 62 is disposed between the power amplifier 11 and the filters 31 and 36 in a plan view of the module substrate 90. Note that the metal member 62 is not limited to a metal wall or metal plate. For example, the metal member 62 may be a plurality of bonding wires or a plurality of post electrodes.

[0086] The integrated circuit 20 (IC) is disposed on the main surface 90b of the module substrate 90 and includes a low-noise amplifier 21 and switch circuits 50 and 51. The integrated circuit 20 can be manufactured using a semiconductor material, such as single crystal silicon, gallium nitride (GaN), or silicon carbide (SiC).

[0087] The low-noise amplifier 21 (LNA), the switch circuit 50 (SW(ANT)), and the switch circuit 51 (SW(PA)) can be configured with field effect transistors (FETs). Note that the amplifying transistor of the low-noise amplifier 21 and the switches included in the switch circuits 50 and 51 are not limited to FETs. For example, the low-noise amplifier 21 and some or all of the switch circuits 50 and 51 may be configured with bipolar transistors.

[0088] The low-noise amplifier 21 and the switch circuits 50 and 51 do not have to be included in a single integrated circuit. For example, the low-noise amplifier 21 may be included in an integrated circuit separate from the switch circuits 50 and 51. In this case, the switch circuit 51 may be included in the same integrated circuit as a control circuit (not shown) that controls the power amplifier 11.

[0089] The mounting of the high-frequency module 1 is not limited to the mounting examples shown in Figures 2 to 4. For example, the high-frequency module 1 may be mounted on one side of the module substrate 90 instead of on both sides of the module substrate 90.

[0090] 5A to 5C, several examples of the configuration of the filters 31, 33, and 34 will be described. Each of Figures 5A to 5C is a partial cross-sectional view of the filters 31, 33, and 34 according to the present embodiment.

[0091] 5A-5C each show an example configuration, and filters 31, 33, and 34 may be implemented using any of a wide variety of circuit implementations and techniques, and therefore, the descriptions of filters 31, 33, and 34 provided below should not be construed as limiting.

[0092] In the example of FIG. 5A, each of the filters 31, 33, and 34 is a SAW filter, and includes a piezoelectric layer 301, a low acoustic velocity layer 302, a high acoustic velocity layer 303, a support substrate 304, and an IDT (interdigital transducer) electrode 305.

[0093] The piezoelectric layer 301 is a layer having piezoelectric properties laminated on the low acoustic velocity layer 302, and is capable of propagating surface acoustic waves. An IDT electrode 305 is disposed on the piezoelectric layer 301. The piezoelectric layer 301 is made of, for example, lithium tantalate (LiTaO ３ ), lithium niobate (LiNbO ３ However, the material of the piezoelectric layer 301 is not limited to these.

[0094] The low acoustic velocity layer 302 is laminated on the high acoustic velocity layer 303 and is disposed between the piezoelectric layer 301 and the high acoustic velocity layer 303. The acoustic velocity of bulk waves propagating through the low acoustic velocity layer 302 is slower than the acoustic velocity of elastic waves, such as surface waves and boundary waves, propagating through the piezoelectric layer 301. The low acoustic velocity layer 302 can be made of a material such as silicon dioxide, glass, silicon oxynitride, lithium oxide, tantalum oxide, or a dielectric material such as a compound in which fluorine, carbon, or boron is added to silicon oxide, or any combination of these. Note that the material of the low acoustic velocity layer 302 is not limited to these.

[0095] The high acoustic velocity layer 303 is laminated on the support substrate 304 and disposed between the low acoustic velocity layer 302 and the support substrate 304. The high acoustic velocity layer 303 confines the surface acoustic waves generated by the resonator within the area where the piezoelectric layer 301 and the low acoustic velocity layer 302 are laminated, preventing them from leaking to layers below the high acoustic velocity layer 303. The acoustic velocity of bulk waves propagating through the high acoustic velocity layer 303 is faster than the acoustic velocity of acoustic waves such as surface waves and boundary waves propagating through the piezoelectric layer 301. Examples of materials that can be used for the high acoustic velocity layer 303 include piezoelectric materials such as silicon nitride, aluminum nitride, lithium tantalate, lithium niobate, and quartz; ceramics such as alumina, sapphire, magnesia, silicon carbide, zirconia, cordierite, mullite, steatite, and forsterite; dielectric materials such as diamond and glass; semiconductors such as silicon and gallium nitride; resins; and any combination thereof. Note that the material of the high acoustic velocity layer 303 is not limited to these.

[0096] The support substrate 304 can support the high acoustic velocity layer 303, the low acoustic velocity layer 302, and the piezoelectric layer 301. The material of the support substrate 304 is a semiconductor material (so-called wide band gap material) having a band gap larger than that of silicon (Si), or an insulating material. Specifically, examples of wide band gap materials for the support substrate 304 include silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (GaO). ２ O ３), diamond, aluminum nitride (AlN), sapphire, or any combination thereof can be used. Also, the insulating material for the support substrate 304 can be, for example, spinel (MgAl ２ O ４ ), yttrium aluminum garnet (Y ３ Al ５ O １２ ), quartz, mullite (3Al ２ O ３ 2SiO ２ or 2Al ２ O ３ SiO ２ ), sialon (SiAlON), or any combination thereof can be used. Note that the material of the support substrate 304 is not limited to these.

[0097] The IDT electrode 305 is disposed on the piezoelectric layer 301 and can convert an electrical signal into a surface acoustic wave and vice versa. The IDT electrode 305 can be made of, for example, aluminum, titanium, gold, silver, copper, platinum, tungsten, molybdenum, ruthenium, or any combination thereof. However, the material of the IDT electrode 305 is not limited to these.

[0098] In the example of FIG. 5B, each of the filters 31 , 33 , and 34 includes a piezoelectric layer 301 , a low acoustic impedance layer 312 , a high acoustic impedance layer 313 , a support substrate 304 , and an IDT electrode 305 .

[0099] The low acoustic impedance layers 312 and the high acoustic impedance layers 313 are an acoustic multilayer film alternately stacked on the support substrate 304. The number of stacked low acoustic impedance layers 312 and high acoustic impedance layers 313 is not limited to the example in FIG. 5B.

[0100] The low acoustic impedance layer 312 has a specific acoustic impedance lower than that of the high acoustic impedance layer 313. The low acoustic impedance layer 312 may be made of a material such as silicon oxide (SiO ２), aluminum nitride (AlN), or any combination thereof can be used. However, the material of the low acoustic impedance layer 312 is not limited to these.

[0101] The high acoustic impedance layer 313 has a specific acoustic impedance lower than that of the low acoustic impedance layer 312. Examples of the material of the high acoustic impedance layer 313 include tungsten (W), molybdenum (Mo), and tantalum oxide (Ta). ２ O ５ ), zinc oxide (ZnO), or any combination thereof can be used. Note that the material of the high acoustic impedance layer 313 is not limited to these.

[0102] In the example of FIG. 5C, each of the filters 31 , 33 , and 34 includes a piezoelectric layer 301 , an intermediate layer 322 , a support substrate 304 , and an IDT electrode 305 .

[0103] The intermediate layer 322 is laminated on the support substrate 304 and forms a gap below the piezoelectric layer 301. This allows the IDT electrode 305 and the piezoelectric layer 301 to function as a laterally excited bulk acoustic resonator (XBAR). Note that the intermediate layer 322 may be integrated with the support substrate 304.

[0104] [1.5 Summary] As described above, the radio-frequency module 1 according to this embodiment includes: a module substrate 90; a power amplifier 11 arranged on the module substrate 90; a filter 31 arranged on the module substrate 90, having a passband including the transmission band of a first FDD band (band A) corresponding to a first power class and connected to the power amplifier 11; and a filter 32 arranged on the module substrate 90, having a passband including the transmission band of a second FDD band (band B) corresponding to a second power class defined by a maximum output power lower than the first power class, the first TDD band (band B) corresponding to the first power class, or the second TDD band (band B) corresponding to the second power class, wherein the filter 32 is arranged between the power amplifier 11 and the filter 31 when the module substrate 90 is seen in a plan view.

[0105] According to this, heat propagation from the power amplifier 11 to the filter 31 is reduced by the filter 32 arranged between the power amplifier 11 and the filter 31. Therefore, it is possible to suppress a temperature rise in the filter 31 due to heat generated in the power amplifier 11, which would otherwise cause deterioration in the characteristics of the filter 31. In particular, the filter 31 for the first FDD band corresponding to the first power class, which allows a higher maximum output power, generates more heat and is more likely to rise in temperature than the filter 32 for the second FDD band corresponding to the second power class, the first TDD band corresponding to the first power class, or the second TDD band corresponding to the second power class. Therefore, the reduction in heat propagation from the power amplifier 11 to the filter 31 has a significant effect in suppressing deterioration in the characteristics of the filter 31.

[0106] For example, the high-frequency module 1 according to this embodiment may further include a switch circuit 51 disposed on the module substrate 90 and including a common terminal 510 connected to the output terminal of the power amplifier 11, a selection terminal 511 connected to the filter 31, and a selection terminal 512 connected to the filter 32.

[0107] This allows the filters 31 and 32 to be selectively connected to the power amplifier 11. Therefore, when the filter 31 is connected to the power amplifier 11, the filter 32 is not connected to the power amplifier 11, thereby further reducing heat transfer from the power amplifier 11 to the filter 31.

[0108] For example, the high-frequency module 1 according to this embodiment may further include a filter 33 disposed on the module substrate 90 and having a passband including the transmission band of the third FDD band corresponding to the first power class, the switch circuit 51 may further include a selection terminal 513 connected to the filter 33, and the filter 32 may be disposed between the power amplifier 11 and the filter 33 in a plan view of the module substrate 90.

[0109] According to this, heat propagation from the power amplifier 11 to the filter 33 is also reduced by the filter 32 arranged between the power amplifier 11 and the filter 33. Therefore, it is possible to suppress a temperature rise of the filter 33 due to heat generated by the power amplifier 11, which would cause deterioration of the characteristics of the filter 33. In particular, the filter 33 for the third FDD band corresponding to the first power class, which allows a higher maximum output power, generates more heat and is more likely to rise in temperature than the filter 32 for the second FDD band corresponding to the second power class, the first TDD band corresponding to the first power class, or the second TDD band corresponding to the second power class. Therefore, the reduction in heat propagation from the power amplifier 11 to the filter 33 has a significant effect in suppressing deterioration of the characteristics of the filter 33.

[0110] For example, the high-frequency module 1 according to this embodiment may further include a filter 34 disposed on the module substrate 90 and having a passband including the transmission band of the fourth FDD band corresponding to the first power class, the switch circuit 51 may further include a selection terminal 514 connected to the filter 34, and the filter 32 may be disposed between the power amplifier 11 and the filter 34 in a plan view of the module substrate 90.

[0111] According to this, heat propagation from the power amplifier 11 to the filter 34 is also reduced by the filter 32 arranged between the power amplifier 11 and the filter 34. Therefore, it is possible to suppress a temperature rise of the filter 34 due to heat generated by the power amplifier 11, which would cause deterioration of the characteristics of the filter 34. In particular, the filter 34 for the fourth FDD band corresponding to the first power class, which allows a higher maximum output power, generates more heat and is more likely to rise in temperature than the filter 32 for the second FDD band corresponding to the second power class, the first TDD band corresponding to the first power class, or the second TDD band corresponding to the second power class. Therefore, the reduction in heat propagation from the power amplifier 11 to the filter 34 has a significant effect in suppressing deterioration of the characteristics of the filter 34.

[0112] For example, the high-frequency module 1 according to the present embodiment may further include a filter 35 disposed on the module substrate 90 and having a passband including the transmission band of the fifth FDD band corresponding to the second power class, the third TDD band corresponding to the first power class, or the fourth TDD band corresponding to the second power class, and the switch circuit 51 may further include a selection terminal 515 connected to the filter 35, and the filter 35 may be disposed between the power amplifier 11 and the filter 31 in a planar view of the module substrate 90.

[0113] According to this, heat transfer from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 35. Therefore, it is possible to further suppress the deterioration of the characteristics of filter 31 caused by the heat generated by power amplifier 11 increasing the temperature of filter 31.

[0114] For example, the high-frequency module 1 according to this embodiment may further include a low-noise amplifier 21 arranged on the module substrate 90, and a filter 36 arranged on the module substrate 90, having a passband including the reception band of the first FDD band, and connected to the low-noise amplifier 21, and the filter 32 may be arranged between the power amplifier 11 and the filter 36 when viewed in plan on the module substrate 90.

[0115] According to this, heat transfer from the power amplifier 11 to the filter 36 is reduced by the filter 32 disposed between the power amplifier 11 and the filter 36. Therefore, it is possible to suppress a temperature rise of the filter 36 due to heat generated in the power amplifier 11, which would otherwise cause deterioration of the characteristics of the filter 36.

[0116] Furthermore, for example, in the high-frequency module 1 according to the present embodiment, the filter 36 may be disposed between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90 .

[0117] According to this, heat propagation from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 36. Therefore, it is possible to further suppress the deterioration of the characteristics of filter 31 caused by the heat generated by power amplifier 11 increasing the temperature of filter 31.

[0118] Furthermore, for example, in the high-frequency module 1 according to the present embodiment, the filter 31 may be closer to the outer edge of the module substrate 90 than the filter 36 in a plan view of the module substrate 90 .

[0119] This allows the filter 31 to be disposed closer to the outer edge of the module substrate 90, thereby increasing the amount of heat dissipated from the filter 31 to the outside of the high-frequency module 1. This further prevents the temperature of the filter 31 from rising and deteriorating the characteristics of the filter 31.

[0120] Furthermore, for example, the high-frequency module 1 according to the present embodiment may further include metal members 61 and / or 62 disposed between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90 .

[0121] According to this, heat transfer from the power amplifier 11 to the filter 31 is reduced by the metal members 61 and / or 62 arranged between the power amplifier 11 and the filter 31. Therefore, it is possible to further suppress the temperature of the filter 31 from increasing due to the heat generated by the power amplifier 11, which would otherwise cause the characteristics of the filter 31 to deteriorate.

[0122] For example, in the high-frequency module 1 according to this embodiment, the module substrate 90 may have main surfaces 90a and 90b facing each other, and the power amplifier 11, the filter 31, and the filter 32 may be arranged on the main surface 90a. The high-frequency module 1 may further include a plurality of external connection terminals 94 arranged on the main surface 90b, a resin member 91 arranged on the main surface 90a and covering at least a portion of the power amplifier 11, the filter 31, and the filter 32, and a metal shield 93 covering at least a portion of the surface of the resin member 91, and at least a portion of the filter 32 may be in contact with the metal shield 93.

[0123] This increases the amount of heat dissipated from the filter 32 to the outside of the high-frequency module 1. Therefore, the heat transfer from the power amplifier 11 to the filter 31 via the filter 32 is further reduced, and the deterioration of the characteristics of the filter 31 can be further suppressed.

[0124] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the filter 31 may be a surface acoustic wave filter including a piezoelectric layer 301 and a support substrate 304, and the support substrate 304 may be made of a semiconductor material having a band gap larger than that of silicon or an insulating material.

[0125] According to this, the support substrate 304 made of a semiconductor material or an insulator material having a wider bandgap than silicon can suppress a decrease in resistance due to an increase in temperature, and in particular, the temperature at which the resistance begins to decrease can be made higher than with a silicon substrate. Therefore, the support substrate 304 made of a semiconductor material or an insulator material having a wider bandgap than silicon can suppress characteristic degradation at high temperatures in the filter 31 compared to a silicon substrate. In particular, since the temperature of the filter 31 for the first FDD band corresponding to the first power class allowing a higher maximum output power is likely to increase, the effect of suppressing characteristic degradation at high temperatures is significant.

[0126] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the filter 31 may be a surface acoustic wave filter including the piezoelectric layer 301 and the support substrate 304, and the support substrate 304 may be made of silicon carbide (SiC), gallium nitride (GaN), gallium oxide (GaO ２ O ３ ), diamond, aluminum nitride (AlN), sapphire, spinel (MgAl ２ O ４ ), yttrium aluminum garnet (Y ３ Al ５ O １２ ), quartz, mullite (3Al ２ O ３ 2SiO ２ or 2Al ２ O ３ SiO ２), and sialon (SiAlON).

[0127] According to this, the support substrate 304 made of the semiconductor material or the insulator material can suppress a decrease in resistance due to an increase in temperature, and in particular, the temperature at which the resistance begins to decrease can be made higher than that of a silicon substrate. Therefore, the support substrate 304 made of the semiconductor material or the insulator material can suppress characteristic degradation at high temperatures in the filter 31 compared to a silicon substrate. In particular, since the temperature of the filter 31 for the first FDD band corresponding to the first power class, which allows a higher maximum output power, is likely to increase, the effect of suppressing characteristic degradation at high temperatures is significant.

[0128] (Variation 1 of Embodiment 1) Next, Variation 1 of Embodiment 1 will be described. In this variation, the main difference from Embodiment 1 is the arrangement of filters 31 and 36 on the main surface 90a of the module substrate 90. Below, this variation will be described with reference to the drawings, focusing on the differences from Embodiment 1. Note that the circuit configurations of the communication device 5 and high-frequency module 1 according to this variation are similar to those of the communication device 5 and high-frequency module 1 according to Embodiment 1, and therefore will not be illustrated or described again.

[0129] [1.6 Mounting Example of High-Frequency Module 1] An example of mounting the high-frequency module 1 according to this modification will be described with reference to Fig. 6. Fig. 6 is a plan view of the high-frequency module 1 according to this modification. In Fig. 6, some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components. However, the actual components may not be labeled with such symbols. Also, Fig. 6 omits illustration of the resin members 91 and 92 that cover the multiple circuit components and the metal shield 93 that covers the resin members 91 and 92.

[0130] 6 shows an example of an implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be construed as limiting.

[0131] As in the first embodiment, the filters 32 and 35 are arranged between the power amplifier 11 and the filters 31, 33, 34, and 36 in a plan view of the module substrate 90. However, in this modification, the positions of the filters 31 and 36 are interchanged. As a result, in a plan view of the module substrate 90, the filter 31 is arranged between the power amplifier 11 and the filter 36, and the filter 36 is closer to the outer edge of the module substrate 90 than the filter 31.

[0132] [1.7 Summary] As described above, in the radio frequency module 1 according to this modification, the filter 31 may be disposed between the power amplifier 11 and the filter 36 when the module substrate 90 is seen in plan view.

[0133] This reduces heat transfer from the power amplifier 11 to the filter 36 not only by the filter 32 but also by the filter 31. This further prevents the temperature of the filter 36 from increasing due to heat generated by the power amplifier 11, thereby further preventing the characteristics of the filter 36 from deteriorating. This is particularly effective in improving the reception characteristics of signals in the first FDD band.

[0134] (Second Modification of First Embodiment) Next, a second modification of the first embodiment will be described. In this modification, the main difference from the first embodiment is the arrangement of the filters 31 and 32 and the matching circuit 46 on the main surface 90a of the module substrate 90. Below, this modification will be described with reference to the drawings, focusing on the differences from the first embodiment.

[0135] [1.8 Mounting Example of High-Frequency Module 1] An example of mounting the high-frequency module 1 according to this modification will be described with reference to FIG. 7 . FIG. 7 is a plan view of the high-frequency module 1 according to this modification. In FIG. 7 , some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components. However, the actual components may not be labeled with such symbols. Also, in FIG. 7 , the resin members 91 and 92 that cover the multiple circuit components and the metal shield 93 that covers the resin members 91 and 92 are not shown.

[0136] 7 shows an example of an implementation of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be construed as limiting.

[0137] Similar to the first embodiment, the filter 32 is disposed between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90. Furthermore, in this modification, the matching circuit 46 is also disposed between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90.

[0138] [1.9 Summary] As described above, the high-frequency module 1 according to this modification may further include a matching circuit 46 that is connected between the power amplifier 11 and the filter 31 and that is disposed between the power amplifier 11 and the filter 31 when the module substrate 90 is viewed in plan.

[0139] According to this, heat propagation from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by matching circuit 46. Therefore, it is possible to further suppress the deterioration of the characteristics of filter 31 caused by the heat generated by power amplifier 11, which would otherwise increase the temperature of filter 31.

[0140] Second Embodiment Next, a second embodiment will be described. This embodiment differs from the first embodiment mainly in that a filter for receiving band B is included in the high-frequency module instead of a filter for receiving band A. A high-frequency module 1A according to this embodiment will be described below with reference to the drawings.

[0141] The communication device 5A according to this embodiment is similar to the communication device 5 except that it includes a high-frequency module 1A instead of the high-frequency module 1. Therefore, a description of the circuit configuration of the communication device 5A will be omitted, and the circuit configuration of the high-frequency module 1A will be described with reference to Fig. 8. Fig. 8 is a circuit configuration diagram of the communication device 5A according to this embodiment.

[0142] 8 is an example circuit configuration, and the communication device 5A and the high-frequency module 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as limiting.

[0143] [2.1 Circuit Configuration of High-Frequency Module 1A] The high-frequency module 1A includes a power amplifier 11, a low-noise amplifier 21, filters 31, 32, 33, 34, 35, and 37, matching circuits 41, 42, 43, 44, 45, and 46, switch circuits 50 and 51, an antenna connection terminal 100, a high-frequency input terminal 111, and a high-frequency output terminal 121.

[0144] The filter 37 is an example of a seventh filter, and has a pass band that includes the reception band of band B. The filter 37 is connected between the antenna connection terminal 100 and the low-noise amplifier 21. Specifically, one end of the filter 37 is switchably connected to the antenna connection terminal 100 via a matching circuit 42 and a switch circuit 50. On the other hand, the other end of the filter 37 is connected to the low-noise amplifier 21.

[0145] [2.2 Mounting Example of High-Frequency Module 1A] Next, a mounting example of the high-frequency module 1A having the circuit configuration described above will be described with reference to Fig. 9. Fig. 9 is a plan view of the high-frequency module 1A according to this embodiment.

[0146] 9, some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with such a symbol. Also, in FIG. 9, resin members 91 and 92 that cover the multiple circuit components and a metal shield 93 that covers the resin members 91 and 92 are not shown.

[0147] 9 shows an example of an implementation of the high-frequency module 1A, and the high-frequency module 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the following description of the high-frequency module 1A should not be construed as limiting.

[0148] The high-frequency module 1A includes a module substrate 90, resin members 91 and 92, a metal shield 93, and a plurality of external connection terminals 94 in addition to the plurality of circuit components shown in FIG.

[0149] The filter 37 (B-Rx) is disposed on the main surface 90a of the module substrate 90. Similar to the filter 36 of the first embodiment, the filter 37 is disposed between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90. Similar to the filters 31 to 36, the filter 37 is implemented as a SAW filter, a BAW filter, an LC resonant filter, a dielectric resonant filter, or any combination thereof. However, the filter 37 is not limited to these.

[0150] The mounting of the high-frequency module 1A is not limited to the mounting example shown in Fig. 9. For example, the high-frequency module 1A may be mounted on one side of the module substrate 90 instead of on both sides of the module substrate 90.

[0151] [2.3 Summary] As described above, in the radio-frequency module 1A according to the present embodiment, the pass band of the filter 32 may include the transmission band of the second FDD band, and the radio-frequency module 1A may further include the low-noise amplifier 21 arranged on the module substrate 90, and the filter 37 arranged on the module substrate 90, having a pass band that includes the reception band of the second FDD band, and connected to the low-noise amplifier 21, and the filter 37 may be arranged between the power amplifier 11 and the filter 31 in a plan view of the module substrate 90.

[0152] According to this, heat transfer from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 37. Therefore, it is possible to further suppress the deterioration of the characteristics of filter 31 caused by the heat generated by power amplifier 11 increasing the temperature of filter 31.

[0153] Third Embodiment Next, a third embodiment will be described. This embodiment differs from the first embodiment mainly in that two power amplifiers are included in the high-frequency module. A high-frequency module 1B according to this embodiment will be described below with reference to the drawings.

[0154] The communication device 5B according to this embodiment is similar to the communication device 5 except that it includes a high-frequency module 1B instead of the high-frequency module 1. Therefore, a description of the circuit configuration of the communication device 5B will be omitted, and the circuit configuration of the high-frequency module 1B will be described with reference to Fig. 10. Fig. 10 is a circuit configuration diagram of the communication device 5B according to this embodiment.

[0155] 10 is an example circuit configuration, and the communication device 5B and the high-frequency module 1B can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1B provided below should not be construed as limiting.

[0156] [3.1 Circuit Configuration of High-Frequency Module 1B] The high-frequency module 1B includes power amplifiers 11B and 12B, a low-noise amplifier 21, filters 31, 32, 33, 34, 35, and 36, matching circuits 41, 42, 43, 44, 45, 46B, and 47B, switch circuits 50, 52, and 53, an antenna connection terminal 100, high-frequency input terminals 111 and 112, and a high-frequency output terminal 121.

[0157] The radio frequency input terminals 111 and 112 are external connection terminals of the radio frequency module 1B. The radio frequency input terminals 111 and 112 are connected to the RFIC 3 outside the radio frequency module 1B and connected to the power amplifiers 11B and 12B inside the radio frequency module 1B, respectively. This allows the radio frequency module 1B to supply transmission signals supplied from the RFIC 3 via the radio frequency input terminals 111 and 112 to the power amplifiers 11B and 12B, respectively.

[0158] Power amplifier 11B is an example of a first power amplifier, and is connected between radio frequency input terminal 111 and filters 31, 33, and 34. Specifically, the input terminal of power amplifier 11B is connected to radio frequency input terminal 111. On the other hand, the output terminal of power amplifier 11B is switchably connected to filters 31, 33, and 34 via matching circuit 46B and switch circuit 52. Power amplifier 11B can amplify a transmission signal supplied from RFIC 3 via radio frequency input terminal 111, using power supplied from a power supply (not shown).

[0159] Note that a part or all of the power amplifier 11B does not have to be included in the high-frequency module 1. In this case, a part or all of the power amplifier 11B may be connected between the RFIC 3 and the high-frequency input terminal 111, or may be included in the RFIC 3.

[0160] Power amplifier 12B is an example of a second power amplifier, and is connected between radio frequency input terminal 112 and filters 32 and 35. Specifically, the input terminal of power amplifier 12B is connected to radio frequency input terminal 112. On the other hand, the output terminal of power amplifier 12B is switchably connected to filters 32 and 35 via matching circuit 47B and switch circuit 53. Power amplifier 12B can amplify a transmission signal supplied from RFIC 3 via radio frequency input terminal 112, using power supplied from a power supply (not shown).

[0161] Note that a part or all of the power amplifier 12B does not have to be included in the high-frequency module 1. In this case, a part or all of the power amplifier 12B may be connected between the RFIC 3 and the high-frequency input terminal 112, or may be included in the RFIC 3.

[0162] The matching circuit (matching network) 46B is connected between the switch circuit 52 and the power amplifier 11B and can achieve impedance matching between the switch circuit 52 and the power amplifier 11B. The matching circuit 46B may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 46B are not limited to inductors and / or capacitors. Furthermore, the matching circuit 46B does not necessarily have to be included in the high-frequency module 1B.

[0163] The matching circuit (matching network) 47B is connected between the switch circuit 53 and the power amplifier 12B and can achieve impedance matching between the switch circuit 53 and the power amplifier 12B. The matching circuit 47B may include, for example, a shunt inductor and / or a shunt capacitor, or may include a series inductor and / or a series capacitor. Note that the matching elements included in the matching circuit 47B are not limited to inductors and / or capacitors. Furthermore, the matching circuit 47B does not necessarily have to be included in the high-frequency module 1B.

[0164] The switch circuit 52 is an example of a second switch circuit and is connected between the filters 31, 33, and 34 and the power amplifier 11B. Specifically, the switch circuit 52 includes a common terminal 520 and selection terminals 521, 522, and 523. The common terminal 520 is an example of a second common terminal and is connected to the power amplifier 11B via the matching circuit 46B. The selection terminal 521 is an example of a sixth selection terminal and is connected to the filter 31. The selection terminal 522 is an example of a seventh selection terminal and is connected to the filter 33. The selection terminal 523 is an example of an eighth selection terminal and is connected to the filter 34.

[0165] In such a connection configuration, the switch circuit 52 can exclusively connect the common terminal 520 to the selection terminals 521, 522, and 523, for example, based on a digital control signal from the RFIC 3. That is, in the switch circuit 52, the common terminal 520 is selectively connected to the selection terminals 521 to 523. The switch circuit 52 is configured, for example, as an SP3T type switch circuit. Note that the switch circuit 52 does not necessarily have to be included in the high-frequency module 1B.

[0166] The switch circuit 53 is an example of a third switch circuit and is connected between the filters 32 and 35 and the power amplifier 12B. Specifically, the switch circuit 53 includes a common terminal 530 and selection terminals 531 and 532. The common terminal 530 is an example of a third common terminal and is connected to the power amplifier 12B via the matching circuit 47B. The selection terminal 531 is an example of a ninth selection terminal and is connected to the filter 32. The selection terminal 532 is an example of a tenth selection terminal and is connected to the filter 35.

[0167] In this connection configuration, the switch circuit 53 can exclusively connect the common terminal 530 to the selection terminals 531 and 532, for example, based on a digital control signal from the RFIC 3. That is, in the switch circuit 53, the common terminal 530 is selectively connected to the selection terminals 531 and 532. The switch circuit 53 is configured, for example, as an SPDT type switch circuit. Note that the switch circuit 53 does not necessarily have to be included in the high-frequency module 1B.

[0168] [3.2 Mounting Example of High-Frequency Module 1B] Next, a mounting example of the high-frequency module 1B having the circuit configuration described above will be described with reference to Fig. 11 and Fig. 12. Fig. 11 is a plan view of the high-frequency module 1B according to this embodiment. Fig. 12 is a plan view of the high-frequency module 1B according to this embodiment, seen through the main surface 90b of the module substrate 90 from the positive side of the z-axis.

[0169] 11 and 12, some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with such a symbol. Also, in FIGS. 11 and 12, the resin members 91 and 92 that cover the multiple circuit components and the metal shield 93 that covers the resin members 91 and 92 are not shown.

[0170] 11 and 12 show an example of implementation of the high-frequency module 1B, and the high-frequency module 1B can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1B provided below should not be construed as limiting.

[0171] The power amplifiers 11B and 12B (PA) are arranged on a main surface 90a of a module substrate 90. Like the power amplifier 11 according to the first embodiment, each of the power amplifiers 11B and 12B can be configured with, for example, an HBT, a HEMT, a MESFET, or any combination thereof.

[0172] The matching circuits 46B and 47B (MN(PA)) are disposed on the main surface 90a of the module substrate 90, and are disposed between the power amplifiers 11B and 12B in a plan view of the module substrate 90. The matching circuits 46B and 47B are implemented, for example, as chip inductors and / or chip capacitors. Note that the matching circuits 46B and 47B are not limited to chip inductors and / or chip capacitors. For example, some or all of the matching circuits 46B and 47B may be implemented by wiring patterns formed on the module substrate 90.

[0173] The filters 32 and 35 are disposed between the power amplifier 11B and the filters 31, 33, 34, and 36 when the module substrate 90 is viewed in plan.

[0174] The integrated circuit 20B (IC) is disposed on the main surface 90b of the module substrate 90 and includes a low-noise amplifier 21 and switch circuits 50, 52, and 53. The integrated circuit 20B can be manufactured using a semiconductor material. Examples of the semiconductor material that can be used include single crystal silicon, gallium nitride (GaN), and silicon carbide (SiC). The low-noise amplifier 21 and the switch circuits 50, 52, and 53 may be included in multiple integrated circuits.

[0175] [3.3 Summary] As described above, the high-frequency module 1B according to this embodiment may further include a power amplifier 12B that is disposed on the module substrate 90 and connected to the filter 32.

[0176] According to this, in the radio frequency module 1B in which a transmission signal in the first FDD band and a transmission signal in the second FDD band, the first TDD band, or the second TDD band can be amplified by the power amplifiers 11B and 12B, respectively, heat propagation from the power amplifier 11B to the filter 31 is reduced by the filter 32 arranged between the power amplifier 11B and the filter 31. Therefore, it is possible to suppress a temperature rise of the filter 31 due to heat generated by the power amplifier 11B, which would cause a deterioration in the characteristics of the filter 31.

[0177] For example, the high-frequency module 1B according to the present embodiment may further include a filter 33 arranged on the module substrate 90 and having a passband that includes the transmission band of the third FDD band corresponding to the first power class, and a switch circuit 52 arranged on the module substrate 90 and including a common terminal 520 connected to the output end of the power amplifier 11B, a selection terminal 521 connected to the filter 31, and a selection terminal 522 connected to the filter 33, and the filter 32 may be arranged between the power amplifier 11B and the filter 33 in a planar view of the module substrate 90.

[0178] According to this, heat propagation from the power amplifier 11B to the filter 33 is also reduced by the filter 32 arranged between the power amplifier 11B and the filter 33. Therefore, it is possible to suppress a temperature rise of the filter 33 due to heat generated in the power amplifier 11B, which would otherwise cause deterioration of the characteristics of the filter 33.

[0179] For example, the high-frequency module 1B according to the present embodiment may further include a filter 34 disposed on the module substrate 90 and having a passband including the transmission band of the fourth FDD band corresponding to the first power class, the switch circuit 52 may further include a selection terminal 523 connected to the filter 34, and the filter 34 may be disposed between the power amplifier 11B and the filter 34 in a plan view of the module substrate 90.

[0180] According to this, heat propagation from the power amplifier 11B to the filter 34 is also reduced by the filter 32 disposed between the power amplifier 11B and the filter 34. Therefore, it is possible to suppress a temperature rise of the filter 34 due to heat generated in the power amplifier 11B, which would otherwise cause deterioration of the characteristics of the filter 34.

[0181] For example, the high-frequency module 1B according to the present embodiment may further include a filter 35 disposed on the module substrate 90 and having a passband including a transmission band of the fifth FDD band corresponding to the second power class, the third TDD band corresponding to the first power class, or the fourth TDD band corresponding to the second power class; and a switch circuit 53 disposed on the module substrate 90 and including a common terminal 530 connected to the output end of the power amplifier 12B, a selection terminal 531 connected to the filter 32, and a selection terminal 532 connected to the filter 35, and the filter 35 may be disposed between the power amplifier 11B and the filter 31 in a plan view of the module substrate 90.

[0182] According to this, heat propagation from power amplifier 11B to filter 31 is reduced not only by filter 32 but also by filter 35. Therefore, it is possible to further suppress the deterioration of the characteristics of filter 31 caused by the heat generated in power amplifier 11B increasing the temperature of filter 31.

[0183] (Modification of Third Embodiment) Next, a modification of the third embodiment will be described. In this modification, the main difference from the third embodiment is the arrangement of the filters 31 to 33 and 35 and the power amplifier 12B on the main surface 90a of the module substrate 90. Below, this modification will be described with reference to the drawings, focusing on the differences from the third embodiment. Note that the circuit configurations of the communication device 5B and the high-frequency module 1B according to this modification are the same as those of the communication device 5B and the high-frequency module 1B according to the third embodiment, and therefore will not be illustrated or described again.

[0184] [3.4 Mounting Example of High-Frequency Module 1B] A mounting example of the high-frequency module 1B according to this modification will be described with reference to Fig. 13. Fig. 13 is a plan view of the high-frequency module 1B according to this modification. In Fig. 13, some components are labeled with a symbol (e.g., "PA") to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with such symbols.

[0185] 13 omits illustration of resin members 91 and 92 that cover a plurality of circuit components and a metal shield 93 that covers the resin members 91 and 92. Furthermore, FIG. 13 omits illustration of filters 34 and 36 and matching circuit 44.

[0186] 13 shows an example of an implementation of the high-frequency module 1B, and the high-frequency module 1B can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the following description of the high-frequency module 1B should not be construed as limiting.

[0187] Similar to the third embodiment, filter 32 is disposed between power amplifier 11B and filters 31 and 33 in a plan view of module substrate 90. Furthermore, filter 31 is disposed between power amplifier 12B and filters 32 and 35 in a plan view of module substrate 90.

[0188] [3.5 Summary] As described above, in the high-frequency module 1B according to this modification, the filter 31 may be disposed between the power amplifier 12B and the filter 32 when the module substrate 90 is seen in a plan view.

[0189] According to this, heat transfer from the power amplifier 12B to the filter 32 is also reduced by the filter 31 disposed between the power amplifier 12B and the filter 32. Therefore, it is possible to suppress a temperature rise of the filter 32 due to heat generated in the power amplifier 12B, which would otherwise cause deterioration of the characteristics of the filter 32.

[0190] (Other Embodiments) While the high-frequency module according to the present invention has been described above based on the embodiments, the high-frequency module according to the present invention is not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency module.

[0191] For example, in the circuit configurations of the various circuits according to the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, a matching circuit and / or a switch circuit may be inserted between the low-noise amplifier 21 and the filter 36.

[0192] The present invention can be widely used in communication devices such as mobile phones as a high-frequency module or communication device disposed in the front end portion.

[0193] REFERENCE SIGNS LIST 1, 1A, 1B High frequency module 2 Antenna 3 RFIC 4 BBIC 5, 5A, 5B Communication device 11, 11B, 12B Power amplifier 20, 20B Integrated circuit 21 Low noise amplifier 31, 32, 33, 34, 35, 36, 37 Filter 41, 42, 43, 44, 45, 46, 46B, 47B Matching circuit 50, 51, 52, 53 Switch circuit 61, 62 Metal member 90 Module substrate 90a, 90b Main surface 91, 92 Resin member 93 Metal shield 94 External connection terminal 100 Antenna connection terminal 111, 112 High frequency input terminal 121 High frequency output terminal 301 Piezoelectric layer 302 Low acoustic velocity layer 303 High acoustic velocity layer 304 Support substrate 305 IDT electrode 312 Low acoustic impedance layer 313 High acoustic impedance layer 322 Intermediate layer 500, 510, 520, 530 Common terminals 501, 502, 503, 504, 505, 511, 512, 513, 514, 515, 521, 522, 523, 531, 532 Selection terminals A, B, C, D, E Band

Claims

1. A high-frequency module comprising: a module substrate; a first power amplifier disposed on the module substrate; a first filter disposed on the module substrate, having a passband including a transmission band of a first frequency division duplex (FDD) band corresponding to a first power class, and connected to the first power amplifier; and a second filter disposed on the module substrate, having a passband including a transmission band of a second FDD band corresponding to a second power class defined by a maximum output power lower than the first power class, a first time division duplex (TDD) band corresponding to the first power class, or a second TDD band corresponding to the second power class, wherein the second filter is disposed between the first power amplifier and the first filter in a plan view of the module substrate.

2. The high-frequency module according to claim 1, further comprising a first switch circuit disposed on the module substrate and including a first common terminal connected to an output terminal of the first power amplifier, a first selection terminal connected to the first filter, and a second selection terminal connected to the second filter.

3. The high-frequency module according to claim 2, further comprising a third filter disposed on the module substrate and having a passband including a transmission band of a third FDD band corresponding to the first power class, wherein the first switch circuit further includes a third selection terminal connected to the third filter, and the second filter is disposed between the first power amplifier and the third filter in a plan view of the module substrate.

4. The high-frequency module according to claim 2 or 3, further comprising a fourth filter disposed on the module substrate and having a passband including a transmission band of a fourth FDD band corresponding to the first power class, wherein the first switch circuit further includes a fourth selection terminal connected to the fourth filter, and the second filter is disposed between the first power amplifier and the fourth filter in a plan view of the module substrate.

5. The high-frequency module further includes a fifth filter disposed on the module substrate and having a passband including a transmission band of a fifth FDD band corresponding to the second power class, a third TDD band corresponding to the first power class, or a fourth TDD band corresponding to the second power class. The first switch circuit further includes a fifth selection terminal connected to the fifth filter. The fifth filter is disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to any one of claims 2 to 4.

6. The high-frequency module further includes a low-noise amplifier disposed on the module substrate, and a sixth filter disposed on the module substrate and having a passband including a reception band of the first FDD band and connected to the low-noise amplifier. The second filter is disposed between the first power amplifier and the sixth filter in a plan view of the module substrate. The high-frequency module according to any one of claims 1 to 5.

7. The sixth filter is disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to claim 6.

8. In a plan view of the module substrate, the first filter is closer to the outer edge of the module substrate than the sixth filter. The high-frequency module according to claim 6 or 7.

9. The first filter is disposed between the first power amplifier and the sixth filter in a plan view of the module substrate. The high-frequency module according to claim 6.

10. The passband of the second filter includes a transmission band of the second FDD band. The high-frequency module further includes a low-noise amplifier disposed on the module substrate, and a seventh filter disposed on the module substrate and having a passband including a reception band of the second FDD band and connected to the low-noise amplifier. The seventh filter is disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to any one of claims 1 to 9.

11. The high-frequency module further includes a matching circuit connected between the first power amplifier and the first filter and disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to any one of claims 1 to 10.

12. The high-frequency module further includes a metal member disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to any one of claims 1 to 11.

13. The high-frequency module further includes a second power amplifier disposed on the module substrate and connected to the second filter. The high-frequency module according to claim 1.

14. The high-frequency module further includes: a third filter disposed on the module substrate and having a passband including a transmission band of a third FDD band corresponding to the first power class; and a second switch circuit disposed on the module substrate and including a second common terminal connected to an output end of the first power amplifier, a sixth selection terminal connected to the first filter, and a seventh selection terminal connected to the third filter. The second filter is disposed between the first power amplifier and the third filter in a plan view of the module substrate. The high-frequency module according to claim 13.

15. The high-frequency module further includes a fourth filter disposed on the module substrate and having a passband including a transmission band of a fourth FDD band corresponding to the first power class. The second switch circuit further includes an eighth selection terminal connected to the fourth filter. The second filter is disposed between the first power amplifier and the fourth filter in a plan view of the module substrate. The high-frequency module according to claim 14.

16. The high-frequency module further includes: a fifth filter disposed on the module substrate and having a passband including a transmission band of a fifth FDD band corresponding to the second power class, a third TDD band corresponding to the first power class, or a fourth TDD band corresponding to the second power class; and a third switch circuit disposed on the module substrate and including a third common terminal connected to an output end of the second power amplifier, a ninth selection terminal connected to the second filter, and a tenth selection terminal connected to the fifth filter. The fifth filter is disposed between the first power amplifier and the first filter in a plan view of the module substrate. The high-frequency module according to any one of claims 13 to 15.

17. The first filter is disposed between the second power amplifier and the second filter in a plan view of the module substrate. The high-frequency module according to any one of claims 13 to 16.

18. The module substrate has a first main surface and a second main surface facing each other. The first power amplifier, the first filter, and the second filter are disposed on the first main surface. The high-frequency module further includes: a plurality of external connection terminals disposed on the second main surface; a resin member disposed on the first main surface and covering at least a part of the first power amplifier, the first filter, and the second filter; and a metal shield covering at least a part of the surface of the resin member. At least a part of the second filter is in contact with the metal shield. The high-frequency module according to any one of claims 1 to 17.

19. The first filter is a surface acoustic wave filter including a piezoelectric layer and a support substrate. The support substrate is made of a semiconductor material having a larger bandgap than silicon or an insulator material. The high-frequency module according to any one of claims 1 to 18.

20. The first filter is a surface acoustic wave filter including a piezoelectric layer and a support substrate, and the support substrate is silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga ２ O ３ ), diamond, aluminum nitride (AIN), sapphire, spinel (MgAl ２ O ４ ), yttrium aluminum garnet (Y ３ Al ５ O １２ ), quartz, mullite (3Al ２ O ３ 2SiO ２ or 2Al ２ O ３ SiO ２ ), and at least one of sialon (SiAlON), and the high-frequency module according to any one of claims 1 to 18.

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