Substrate processing apparatus and substrate processing method

Abstract

Provided is a substrate processing apparatus for processing a substrate, the substrate processing apparatus including: a substrate holding part for holding the substrate; a laser irradiation part for irradiating the substrate held by the substrate holding part with laser light through a lens; an imaging part; and a moving part for moving the imaging part between a first position at which it is possible to image the substrate held by the substrate holding part and a second position different from the first position. A relative position of the substrate holding part with respect to the laser irradiation part is fixed.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses a substrate processing method that includes irradiating one of a first main surface and a second main surface of a substrate with a laser beam to flatten the one surface, and, after flattening the one surface of the substrate, grinding the other surface facing opposite to the one surface of the substrate to flatten the other surface.

[0003] International Publication No. 2022 / 158333

[0004] The technique according to the present disclosure processes a substrate fixedly held by a substrate holder in a substrate processing apparatus by irradiating the substrate with laser light while taking into consideration displacement of the substrate.

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing substrates, comprising: a substrate holding unit for holding the substrate; a laser irradiation unit for irradiating the substrate held by the substrate holding unit with laser light via a lens; an imaging unit; and a moving unit for moving the imaging unit between a first position where the substrate held by the substrate holding unit can be imaged and a second position different from the first position, wherein the substrate holding unit is fixed in a relative position with respect to the laser irradiation unit.

[0006] According to the present disclosure, a substrate fixedly held by a substrate holder in a substrate processing apparatus can be processed by irradiating it with laser light while taking into account displacement of the substrate.

[0007] 1 is a flow diagram showing main steps of wafer processing according to an embodiment; FIG. 2 is a plan view showing an outline of the configuration of a wafer processing system according to an embodiment; FIG. 3 is a cross-sectional view showing an outline of the configuration of a wafer processing system according to an embodiment; FIG. 4 is a cross-sectional view showing an outline of the configuration of a wafer processing apparatus according to an embodiment; FIG. 5 is a plan view showing an outline of the configuration of a wafer processing apparatus according to an embodiment; FIG. 6 is an explanatory view showing an outline of the configuration of a laser irradiation unit according to an embodiment; FIG. 7 is an explanatory view showing a state in which a first surface of a wafer is irradiated with laser light; FIG. 8 is an explanatory view showing a state in which an imaging unit according to an embodiment is moved; FIG. 9 is an explanatory view showing a state in which an imaging unit according to an embodiment is moved; FIG. 10 is a flow diagram showing main steps of a method for acquiring wafer displacement and correcting laser light irradiation position; FIG. 11 is an explanatory view showing an example of an imaging position by an imaging unit; FIG. 12 is an explanatory view showing an example of a method for determining a reference point in image analysis; FIG. 13 is an explanatory view showing an example of a method for determining a measurement point in image analysis; FIG. 14 is an explanatory view showing another example of a method for determining a measurement point in image analysis; FIG. 15 is an explanatory view showing another example of a method for determining a measurement point in image analysis; FIG. 16 is an explanatory view showing an example of a method for acquiring wafer displacement; FIG. 17 is an explanatory view showing a state in which an imaging unit according to another embodiment is moved.

[0008] 2. Description of the Related Art In the manufacturing process of semiconductor devices, the cut surfaces of disk-shaped semiconductor wafers (hereinafter referred to as "wafers") obtained by slicing a single crystal ingot with a wire saw or the like are flattened.

[0009] Wafers sliced ​​from a single crystal ingot have waviness on both sides. Therefore, in the method described in Patent Document 1, the waviness of the wafer is measured, and then one side of the wafer is irradiated with a laser beam based on the waviness measurement results, thereby flattening the one side. In this process, the irradiation point of the laser beam is moved using, for example, a galvanometer scanner, and the laser beam is irradiated onto one side of the wafer.

[0010] When flattening a wafer, it is important to accurately match the waviness measurement results with the laser beam irradiation position on the wafer. This requires wafer alignment in the laser beam irradiation device. A conventional method for aligning a wafer is to place the wafer on a rotatable stage, detect the peripheral edge of the wafer with a sensor while rotating the wafer, and calculate the amount of wafer eccentricity based on the detection results.

[0011] On the other hand, as in the irradiation device described in Patent Document 1, there are cases where the wafer is held by a wafer holder whose relative position with respect to the laser light irradiation unit is fixed, and the laser light is irradiated at a position corresponding to the previously acquired waviness measurement results, thereby processing the wafer. In such cases, there is no known method of acquiring the displacement of the wafer's center position and orientation (azimuth angle) to perform the above-mentioned alignment.

[0012] The technology disclosed herein processes a substrate held by a substrate holder, the position of which is fixed relative to a laser beam irradiation unit in a substrate processing apparatus, by irradiating the substrate with laser beam while taking into consideration the displacement of the substrate. Hereinafter, a wafer processing apparatus as a substrate processing apparatus and a wafer processing method as a substrate processing method according to this embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] First, a wafer processing method according to this embodiment will be described. In this embodiment, both surfaces of a wafer W, which is a substrate obtained by slicing a single crystal ingot, are flattened.

[0014] The wafer W is a silicon wafer or a compound semiconductor wafer. The compound semiconductor wafer is not particularly limited, but may be, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer. The wafer W is disk-shaped and has a first surface Wa and a second surface Wb. The second surface Wb is the surface opposite to the first surface Wa. The first surface Wa and the second surface Wb each have a wavy shape. In one embodiment, the first surface Wa or the second surface Wb is a cut surface after slicing. In another embodiment, the first surface Wa or the second surface Wb is a processed surface obtained by lapping the cut surface after slicing.

[0015] First, the waviness of the wafer W is measured (St1 in FIG. 1). In St1, the waviness of at least one surface of the wafer W is measured. A known measuring device is used to measure the waviness in St1. For example, an infrared sensor, a laser displacement meter, a capacitance sensor, or the like is used to measure the height distribution of the first surface Wa or the second surface Wb set on the laser-processed surface, and the waviness of the first surface Wa or the second surface Wb is measured.

[0016] After measuring the waviness of both the first surface Wa and the second surface Wb in St1, the laser-processed surface may be set to the surface with the smallest waviness or the surface with the largest waviness.

[0017] Next, based on the measurement results of the waviness of the first surface Wa measured in St1, the entire surface or a selected portion of the first surface Wa is irradiated with laser light to flatten the first surface Wa (St2 in FIG. 1). In St2, the irradiation point (focus) of the laser light is moved to the entire surface or a selected portion of the first surface Wa using the wafer processing device 30 (see FIG. 4), and the laser light is irradiated. Note that the detailed configuration of the wafer processing device 30, the method of obtaining the wafer displacement, and the method of irradiating the laser light will be described later.

[0018] In St2, when the first surface Wa is irradiated with laser light, the first surface Wa absorbs the laser light and either changes state from a solid phase to a gas phase and disperses, or disperses while remaining in the solid phase and is removed. The depth of the surface layer of the first surface Wa that is removed by the laser light is controlled by the integrated irradiation amount, which is the product of the intensity of the laser light (laser light output) and the irradiation time. The greater the integrated irradiation amount, the greater the depth of the surface layer of the first surface Wa that is removed. In one embodiment, the integrated irradiation amount at an irradiation position can be changed by changing the number of irradiations at that irradiation position in addition to the intensity or irradiation time of the laser light.

[0019] In St2, the integrated dose of laser light per unit area of ​​the first surface Wa is controlled based on the measurement results of the waviness of the first surface Wa measured in St1. Since the first surface Wa has waviness, the integrated dose is changed depending on the location within the first surface Wa. For example, the integrated dose is increased in locations with large waviness and decreased in locations with small waviness. Then, the waviness of the first surface Wa is removed, and the first surface Wa is flattened.

[0020] Next, the first surface Wa that has been laser-machined in St2 is cleaned (St3 in FIG. 1). A known cleaning device is used to clean the first surface Wa in St3. For example, the first surface Wa may be scrubbed or cleaned with a cleaning solution. This cleaning removes particles (debris) adhering to the first surface Wa. Note that the second surface Wb may also be cleaned in St3.

[0021] Next, the second surface Wb is ground to flatten it (St4 in FIG. 1 ). A known grinding device is used to grind the second surface Wb in St4. For example, while the first surface Wa is held by a chuck, multiple grindstones attached to a grinding wheel of a grinding tool are brought into contact with the second surface Wb, and the chuck and grinding wheel are rotated to grind the entire second surface Wb. At this time, since the first surface Wa has been flattened in St2, the wafer W can be held horizontally by the chuck, and the second surface Wb can be properly ground. Then, any waviness in the second surface Wb is removed, and the second surface Wb is flattened.

[0022] Next, the second surface Wb ground in St4 is cleaned (St5 in FIG. 1). A known cleaning device is used to clean the second surface Wb in St5. For example, the second surface Wb may be scrubbed. This cleaning removes grinding debris adhering to the second surface Wb. Note that the first surface Wa may also be cleaned in St5. Furthermore, the first surface Wa, which is the laser-processed surface, may be ground after St5 to further improve the flatness of both surfaces.

[0023] Next, the second surface Wb cleaned in St5 is etched (St6 in FIG. 1). A known etching device is used to etch the second surface Wb in St6. For example, an etching solution is supplied to the second surface Wb, and the second surface Wb is wet-etched. Furthermore, the first surface Wa may be etched in St6.

[0024] As described above, in the wafer processing of this embodiment, the first surface Wa can be planarized by laser processing in St 2, and the second surface Wb can be planarized by grinding in St 4. Furthermore, the second surface Wb may be laser processed before grinding.

[0025] Next, a wafer processing system 1 used in the wafer processing method according to this embodiment will be described.

[0026] Fig. 2 is a plan view showing an outline of the configuration of the wafer processing system 1. Fig. 3 is a side view showing an outline of the internal configuration of the wafer processing system 1. In the following, to clarify the positional relationships, mutually orthogonal X-axis, Y-axis, and Z-axis directions are defined, and the positive Z-axis direction is defined as the vertically upward direction.

[0027] As shown in FIG. 2, the wafer processing system 1 has a configuration in which a loading / unloading station 2 through which cassettes C, each capable of accommodating a plurality of wafers W, are loaded and unloaded, for example, to and from the outside, and a processing station 3 equipped with various processing devices that perform desired processing on the wafers W, are integrally connected.

[0028] The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four, cassette mounting plates 11. The cassette mounting plates 11 are arranged in a row in the horizontal Y-axis direction (the up-down direction in FIG. 1 ). These cassette mounting plates 11 can be used to place the cassettes C when they are loaded or unloaded from or into the outside of the wafer processing system 1. In this way, the loading / unloading station 2 is configured to be able to hold a plurality of wafers W.

[0029] The loading / unloading station 2 is provided with a wafer transfer section 20 adjacent to the cassette mounting table 10. The wafer transfer section 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (Z-axis) (in the θ direction), and can transfer wafers W between the cassettes C on each cassette mounting plate 11 and transition devices 50, 51 in the third processing block G3 of the processing station 3, which will be described later.

[0030] Processing station 3 is provided with multiple processing blocks, e.g., three processing blocks G1, G2, and G3, each equipped with various devices. For example, a first processing block G1 is provided on the front side (negative Y-axis side in FIG. 1 ) of processing station 3, and a second processing block G2 is provided on the rear side (positive Y-axis side in FIG. 1 ) of processing station 3. Furthermore, a third processing block G3 is provided on the loading / unloading station 2 side of processing station 3 (negative X-axis side in FIG. 1 ).

[0031] The first processing block G1 is provided with a wafer processing apparatus 30 used in the laser processing of St2. The wafer processing apparatus 30, which will be described in detail later, irradiates one surface of the wafer W with laser light to planarize the surface. In one embodiment, the first processing block G1 is provided with a plurality of wafer processing apparatuses 30.

[0032] The second processing block G2 includes, for example, a cleaning apparatus 40 and a measuring apparatus 41. The cleaning apparatus 40 cleans the wafer W processed in the wafer processing apparatus 30. The measuring apparatus 41 measures the waviness of at least one surface of the wafer W before it is processed in the wafer processing apparatus 30 in St1. The measuring apparatus 41 also measures the waviness of the processed surface of the wafer W processed in the wafer processing apparatus 30. In one embodiment, the measuring apparatus 41 is provided outside the wafer processing system 1.

[0033] As shown in FIG. 3 , the third processing block G3 is provided with two transition devices 50 and 51 for wafers W, arranged in two tiers from bottom to top. The transition devices 50 and 51 transfer wafers W between the wafer transfer device 22 and the wafer transfer device 61. The third processing block G3 is also provided with an inversion module 52 and an alignment module 53. The inversion module 52 inverts the wafer W. The alignment module 53 detects the center Wc and notch Wn of the wafer W and determines the center position and azimuth angle of the wafer. Note that the measurement device 41 may be further configured to detect the center Wc and notch Wn of the wafer W and determine the center position and azimuth angle of the wafer. While the transition devices 50 and 51, the inversion module 52, and the alignment module 53 are stacked in FIG. 3 , the stacking order is not limited to the example of FIG. 3 .

[0034] 2, the area surrounded by the first to third processing blocks G1 to G3 forms a wafer transfer area 60. In the wafer transfer area 60, for example, a wafer transfer device 61 is disposed.

[0035] The wafer transfer device 61 has a transfer arm that is movable, for example, in the vertical direction, horizontal directions (X-axis direction, Y-axis direction), and around the vertical axis (Z-axis) (θ direction). The wafer transfer device 61 moves within the wafer transfer region 60 and can transfer the wafer W to a desired device within the surrounding first processing block G1, second processing block G2, and third processing block G3.

[0036] In one embodiment, the wafer processing system 1 further includes a grinding device (not shown) that grinds the wafer W in St4 after being processed in the wafer processing device 30 in St2 and cleaned in St3.

[0037] As shown in FIG. 2 , the wafer processing system 1 is provided with a control unit 70. The control unit 70 processes computer-executable instructions that cause the wafer processing apparatus 30 to perform the various processes described in this disclosure. The control unit 70 may be configured to control each element of the wafer processing apparatus 30 to perform the various processes described herein. In one embodiment, part or all of the control unit 70 may be included in the wafer processing apparatus 30. The control unit 70 may include a processing unit, a storage unit, and a communication interface. The control unit 70 is realized, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and to execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit). The storage unit may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface may communicate with the wafer processing apparatus 30 via a communication line such as a local area network (LAN).

[0038] Next, the configuration of the wafer processing apparatus 30 used in the laser processing of St2 will be described.

[0039] 4, the wafer processing apparatus 30 has a chamber 110, a laser irradiation unit 120, and a wafer holding unit 130. The laser irradiation unit 120 is disposed in the upper part of the chamber 110, and the wafer holding unit 130 is disposed in the lower part of the chamber 110. Inside the chamber 110, a processing space S is formed between the laser irradiation unit 120 and the wafer holding unit 130.

[0040] The chamber 110 is composed of a fixed cover 111 and an openable cover 112. The fixed cover 111 and the openable cover 112 define the boundary between the processing space S and the outside. The fixed cover 111 is fixed by a support member (not shown). The fixed cover 111 has a configuration in which a truncated cone portion 111a and a cylindrical portion 111b are integrated together. Note that the configuration of the chamber 110 is not limited to the example shown in the figure. For example, the chamber 110 may have a cylindrical shape as a whole.

[0041] The truncated cone portion 111a has a truncated cone shape with open top and bottom surfaces, and has a tapered shape in side view with a diameter increasing from top to bottom. The upper end of the truncated cone portion 111a is disposed away from the laser irradiation unit 120, which will be described later. As shown in FIGS. 4 and 5 , a gas inlet 113 is formed in an annular shape between the upper end of the truncated cone portion 111a and the laser irradiation unit 120. The gas inlet 113 is formed to allow gas to flow into the chamber 110, as will be described later. Furthermore, by forming a gap serving as the gas inlet 113 between the upper end of the truncated cone portion 111a and the laser irradiation unit 120, vibrations generated when the laser irradiation unit 120 operates are not transmitted to the chamber 110, and further transmission to the wafer holder 130 can be suppressed.

[0042] An air inlet 114 may be formed on the side surface of the truncated cone portion 111a, for example, below the laser irradiation unit 120. The air inlet 114 is provided with an air supply unit 115 equipped with, for example, a fan and a filter. The air supply unit 115 supplies gas from the air inlet 114 into the chamber 110. Note that the air inlet 114 may be formed around the entire circumference of the truncated cone portion 111a.

[0043] The cylindrical portion 111b has a cylindrical shape that is open at the top and bottom and extends downward from the bottom end of the truncated cone portion 111a. The diameter of the cylindrical portion 111b is the largest in the fixed cover 111. A loading / unloading port 116 for loading / unloading the wafer W into / from the chamber 110 is formed at the bottom of the cylindrical portion 111b.

[0044] The openable cover 112 has a cylindrical shape with openings on the top and bottom. The openable cover 112 is provided inside the cylindrical portion 111b of the fixed cover 111 at a position corresponding to the loading / unloading opening 116. The openable cover 112 is configured to be able to move up and down by an elevating mechanism (not shown) and opens and closes the loading / unloading opening 116. The openable cover 112 rises inside the cylindrical portion 111b when opening the loading / unloading opening 116, and descends to and is accommodated in a cover accommodating section 160 (described later) when closing the loading / unloading opening 116.

[0045] A laser irradiation unit 120 is provided above the fixed cover 111 of the chamber 110. The laser irradiation unit 120 is disposed above the wafer holding unit 130 and irradiates a laser beam L onto the wafer W held by the wafer holding unit 130. The laser irradiation unit 120 is optically connected to a light source 121 serving as a laser oscillator. As shown in FIG. 6 , the laser irradiation unit 120 has an optical system 122 and a lens 123 for irradiating the laser beam L oscillated from the light source 121 onto the wafer W.

[0046] The light source 121 is, for example, a pulsed laser, and oscillates a pulsed laser beam L to be irradiated onto the first surface Wa of the wafer W. The laser beam L is absorbent by the wafer W. If the wafer W is a silicon wafer, the laser beam L is, for example, UV light or IR laser beam, and the wavelength of the IR laser beam is, for example, 1064 nm. The wafer W absorbs the laser beam L and either changes state from a solid phase to a gas phase and disperses, or disperses while remaining in the solid phase. As a result, the first surface Wa of the wafer W is planarized. The laser beam L may be focused and irradiated onto the first surface Wa of the wafer W. The irradiation point P of the laser beam L is the focal point where the power density is highest, but it does not have to be the focal point. The light source 121 may be included in the laser irradiation unit 120.

[0047] The optical system 122 has a galvanometer scanner 124. The galvanometer scanner 124 is disposed above the wafer holder 130. The galvanometer scanner 124 has a galvanometer mirror 125 and a galvanometer motor 26. The galvanometer motor 26 rotates the galvanometer mirror 125 to displace the irradiation point P of the laser light L. The galvanometer scanner 124 can move the position of the irradiation point P of the laser light L on the first surface Wa of the wafer W, without moving the wafer holder 130, to scan the laser light L.

[0048] The optical system 122 may include other optical elements. For example, the optical system 122 may include a homogenizer and an aperture to form a rectangular irradiation spot P with a uniform intensity distribution. Furthermore, for example, the optical system 122 may include an attenuator to adjust the output of the laser light L. The shape of the irradiation spot P is not limited to a rectangle and may be, for example, a circle.

[0049] For example, an fθ lens is used as the lens 123. The lens 123 forms a focal plane perpendicular to the Z-axis direction. While the galvanometer scanner 124 moves the position of the irradiation point P in the X-axis direction or the Y-axis direction, the lens 123 maintains the Z-axis position of the irradiation point P on the focal plane, and also maintains the shape and dimensions of the irradiation point P on the focal plane. As a result, the rectangular irradiation points P can be arranged two-dimensionally, regularly, and without gaps on the surface of the wafer W.

[0050] 7, the laser irradiation unit 120 having the above configuration moves the irradiation point P of the laser light L in the X-axis direction and also in the Y-axis direction. The laser irradiation unit 120 then irradiates the entire surface or selected portions of the first surface Wa of the wafer W with the laser light L. For example, the laser light L may be irradiated partially onto the first surface Wa depending on the waviness state of the first surface Wa.

[0051] Although the laser irradiation unit 120 in this embodiment has the galvanometer scanner 124, the configuration for moving the irradiation point P of the laser light L is not limited to this. For example, the laser irradiation unit 120 may have a wedge scanner, which moves the irradiation point P.

[0052] 4, a wafer holding unit 130 is provided below the open / close cover 112 of the chamber 110. The wafer holding unit 130 has a stage 131 and a plurality of, for example, three holding pins 132. The stage 131 has a disk shape, and for example, the diameter of the stage 131 is smaller than the diameter of the wafer W. The three holding pins 132 are arranged on the upper surface of the stage 131 at equal intervals on a circumference concentric with the stage 131. The three holding pins 132 contact and hold the second surface Wb of the wafer W. The wafer holding unit 130 according to this embodiment does not have a mechanism for moving its position relative to the laser irradiation unit 120, and its position relative to the laser irradiation unit 120 is fixed.

[0053] Since the wafer holding part 130 is fixed, displacement of the wafer W relative to the wafer holding part 130 is suppressed. The configuration of the wafer holding part 130 is not limited to that of this embodiment. For example, a suction mechanism (not shown) may be provided on the upper surface of the holding pins 132, and the wafer W may be held by suction using the holding pins 132. The wafer holding part 130 may also hold the wafer W by suction, and may use a vacuum chuck or an electrostatic chuck.

[0054] A cover 133 is provided at the center of the upper surface of the stage 131. The cover 133 has a hollow shape with an open bottom and is disposed so as to cover, for example, the through-hole 170. A gap is formed between the cover 133 and the upper surface 131a of the stage 131. In the cover 133, gas supplied from the gas supply unit 173 flows in through the through-hole 170 and flows out through the through-hole 180, as will be described later. In addition, in the cover 133, gas in the chamber 110 flows in from the space between the wafer W and the stage 131 and flows out through the through-hole 180, as will be described later. The cover 133 is made of a material that is transparent to the laser light L.

[0055] A beam damper 140 is provided on the outer periphery of the stage 131 of the wafer holder 130. The beam damper 140 is arranged in a ring shape along the outer periphery of the stage 131. At the radially outer side of the outer periphery of the stage 131, the height of the upper surface 140a of the beam damper 140 and the height of the upper surface 131a of the stage 131 may be approximately the same. Since there is no step between the upper surfaces 140a and 131a, particle accumulation can be suppressed and gas can flow smoothly over the upper surfaces 140a and 131a. The beam damper 140 extends from the radially outer side of the outer periphery of the stage 131 to below the outer periphery of the stage 131. The inner upper side surface of the beam damper 140 has a step that fits the outer periphery of the stage 131 and is in contact with the outer periphery side surface and lower surface of the stage 131. The beam damper 140 and the stage 131 may be provided integrally.

[0056] An annular opening 141 is formed in the upper surface of the beam damper 140 so as to surround the entire outer periphery of the stage 131. The bottom surface of the opening 141 has a generally conical shape that protrudes toward the upper surface. The apex angle of the conical shape is preferably less than 90°. As a result, in the beam damper 140, the laser light L from the laser irradiation unit 120 that enters the opening 141 is reflected downward or absorbed (converted into heat), thereby preventing the laser light L from reflecting off the beam damper 140 and escaping upward.

[0057] The beam damper 140 is made of a material that is resistant to laser light and that absorbs or diffuses the laser light L in other directions, such as a metal material such as aluminum. Furthermore, the outer surface of the beam damper 140 and the inner surface of the opening 141 may be subjected to surface treatment such as anodizing in order to absorb the laser light L or diffuse it in other directions.

[0058] Furthermore, in order to suppress a temperature rise in the beam damper 140, a concave-convex portion (not shown) may be formed on at least the outer surface of the beam damper 140. In this case, the surface area of ​​the outer surface of the beam damper 140 can be increased to promote heat dissipation (cooling of the beam damper 140) of the beam damper 140. Furthermore, a cooling mechanism (not shown) may be further provided outside the beam damper 140 to promote heat dissipation (cooling of the beam damper 140) of the beam damper 140. In one example, the cooling mechanism forms a refrigerant flow path outside the beam damper 140.

[0059] A cover housing portion 160 is provided on the upper part of the outer peripheral side surface of the beam damper 140. The cover housing portion 160 is attached in an annular shape around the entire outer periphery of the beam damper 140. The cover housing portion 160 has a rectangular shape with an open top in cross section, and is configured to be able to house the open-close cover 112 when the open-close cover 112 closes the load / unload port 116.

[0060] The wafer holding unit 130 has a through-hole 170 formed therein that opens to the upper surface 131a of the stage 131 and penetrates through the wafer holding unit 130 in the thickness direction. Note that a plurality of through-holes 170 may be formed. A flow path 171 is provided below the wafer holding unit 130, extending substantially vertically downward from the through-hole 170. The laser light L irradiated from the laser irradiation unit 120 passes through the through-hole 170, and the laser light L or gas also flows through the flow path 171.

[0061] An air supply path 172 is connected to the lower end of the flow path 171. The air supply path 172 is connected to an exhaust mechanism (not shown), such as a vacuum pump, via an exhaust pipe (not shown). The air supply path 172 may be connected to the exhaust path 150 described above. Gas within the chamber 110 is then exhausted from the exhaust path via the through-hole 170 and the flow path 171.

[0062] An air supply unit 173 that supplies gas to the air supply path 172 is provided on a side surface of the air supply path 172. The air supply unit 173 includes, for example, a fan and a filter. A transmission window 174 that allows the laser light L to pass through is formed on the bottom surface of the air supply path 172.

[0063] A power meter 175 is provided on the lower surface side of the air supply path 172. A transmission window 76 is formed on the upper surface of the power meter 175 at a position corresponding to the transmission window 174 of the air supply path 172. The laser light L irradiated from the laser irradiation unit 120 enters the power meter 175 via the cover 133, the through-hole 170, the flow path 171, the air supply path 172, the transmission window 174, and the transmission window 76. The power meter 175 measures the power (output) of the laser light L. The power meter 175 also measures the positional relationship between the laser light L and the wafer W when the wafer W is not held by the wafer holding unit 130. The laser irradiation unit 120 may be calibrated based on the measurement results of the power meter 175.

[0064] In this embodiment, the laser light L and the gas flow through the through-hole 170 and the flow path 171, but the flow path for the laser light L and the flow path for the gas may be provided separately.

[0065] The wafer holding unit 130 has a plurality of, for example, three, through-holes 180 formed therein, which open to the upper surface 131a of the stage 131 and penetrate through the stage 131 in the thickness direction. A plurality of, for example, three, exhaust paths 181 are provided below the wafer holding unit 130, each extending substantially vertically downward from each through-hole 180. The three exhaust paths 181 are connected to an exhaust mechanism (not shown), such as a vacuum pump. In this case, as will be described later, gas supplied from the gas supply unit 173 flows sequentially through the gas supply path 172, the flow path 171, the through-hole 170, the cover 133, the through-hole 180, and the exhaust path 181 before being exhausted.

[0066] An imaging unit 200 and a moving unit 201 that moves the imaging unit 200 in a direction parallel to the surface of the wafer W (XY plane) are provided near the outer peripheral side of the wafer holding unit 130. The imaging unit 200 includes a line sensor 211, an illuminator 212, and a carrier 213. The illuminator 212 includes, for example, an LED. The carrier 213 has a vertical portion and two horizontal portions, one above the other. The vertical portion is attached to the moving unit 201, the upper horizontal portion holds the line sensor 211, and the lower horizontal portion holds the illuminator 212. The line sensor 211 is attached to the upper horizontal portion of the carrier 213 facing downward so as to capture images in the negative direction of the Z axis. The illuminator 212 is attached to the lower horizontal portion of the carrier 213 facing upward so as to irradiate light in the positive direction of the Z axis. The two horizontal portions, one above the other, of the carrier 213 are arranged to sandwich the wafer W therebetween. That is, the line sensor 211 and the illuminator 212 are arranged to sandwich the wafer W therebetween. When imaging, the imaging unit 200 is moved to a first position P1 inside the chamber 110 where it can image the wafer W, as will be described later. When imaging is not being performed, the imaging unit 200 is moved to a second position P2 outside the chamber 110. In one embodiment, the line sensor 211 is attached to a lower horizontal portion of the carrier 213 facing upward so as to be able to image the positive direction of the Z axis, and the illumination 212 is attached to an upper horizontal portion of the carrier 213 facing downward so as to irradiate light in the negative direction of the Z axis.

[0067] The moving unit 201 is disposed outside the chamber 110. In one embodiment, the moving unit 201 includes a driving source such as a motor and rails (not shown), and holds the carrier 213 so that the carrier 213 can slide on the rails. When moving the imaging unit 200, the carrier 213 is slid on the rails and moved in a direction parallel to the surface of the wafer W.

[0068] 5 , 8 , and 9 , when imaging is performed using the imaging unit 200, with the openable cover 112 open, the moving unit 201 moves the carrier 213 in the negative direction of the Y axis from a second position P2 outside the chamber 110, indicated by a solid line, to move the line sensor 211 and the illumination 212 to a first position P1 at the outer periphery of the wafer W inside the chamber 110, indicated by a dotted line in FIGS. 5 and 9 . Note that the first position P1 of the imaging unit 200 according to this embodiment refers to a position inside the chamber 110 where at least a portion of the outer periphery of the wafer W can be imaged, and is not limited to the position indicated by the dotted line in FIGS. 5 and 9 . As a result, while the line sensor 211 is being moved by the moving unit 201 to the first position P1 at the outer periphery of the wafer W inside the chamber 110, the line sensor 211 images the notch Wn and a portion of the outer periphery We of the wafer W from the upper surface side of the wafer W. That is, light irradiated onto the lower surface of the outer periphery of the wafer W from an illumination 212 positioned below the outer periphery of the wafer W at an imaging position described below is received by a line sensor 211 positioned above the outer periphery of the wafer W and an image is taken. The dashed-dotted line shown in FIG. 5 is an example of a range that can be imaged by the line sensor 211. The imaging position described below may be the entire imageable range or a part of the imageable range. In addition, although the second position P2 is outside the chamber in this embodiment, in one embodiment, both the first position P1 and the second position P2 are inside the chamber.

[0069] In the wafer processing apparatus 30 having the above configuration, the laser processing of St2 described above is performed. At this time, prior to the laser processing, the displacement of the center position and azimuth angle of the wafer W is acquired, and the irradiation position of the laser light L is corrected based on the acquired displacement.

[0070] First, the openable cover 112 in the chamber 110 is raised to open the loading / unloading port 116 (Step 101 in FIG. 10 ). Next, the wafer W is loaded into the chamber 110 by the wafer transfer device 61 provided outside the wafer processing apparatus 30, and then transferred to and held by the wafer holding unit 130 (Step 102 in FIG. 10 ). At this time, the measuring device 41 or the alignment module 53 adjusts the position and azimuth of the wafer so that the wafer W is located at a predetermined center position and azimuth on the wafer holding unit 130 (hereinafter referred to as the "reference position"). Then, the wafer W is transferred to the wafer holding unit 130 by the wafer transfer device 61. In this embodiment, the actual center position and azimuth of the wafer W held by the wafer holding unit 130 may be displaced from the reference position.

[0071] Next, after the wafer transfer device has left, the imaging unit 200 is moved from the second position P2 to the first position P1, and an image of the imaging position including the notch Wn and part of the outer periphery We of the wafer W is captured (St103 in FIG. 10 ). The imaging unit outputs an image M of the imaging position. For example, as shown in FIG. 11 , an image of the imaging position surrounded by a rectangle is captured, and an image M including an image of the portion where the notch Wn is formed and the outer periphery We is output (see FIG. 13 ). After capturing the image M, the imaging unit 200 is moved from the first position P1 to the second position P2, and then the open / close cover 112 is lowered to close the loading / unloading port 116.

[0072] As an example, in the image M, the image of the formation portion of the notch Wn and the outer periphery We is acquired as a group of black and white binary data including coordinate information in the coordinate system of the image M. The output image M is transmitted to, for example, the control unit 70. Note that in this embodiment, the coordinate system of the image M is such that the origin O is the bottom left vertex of the rectangular image M when the image of the outer periphery We is convex downward, and the upward direction of the image M is the origin M. Ｘ The positive direction of the shaft is defined as the axis direction, and the right direction, which is the side where the measurement point d described later is determined as viewed from the notch Wn, is defined as the axis direction. Ｙ M in the positive axis direction Ｘ -M Ｙ It is a Cartesian coordinate system.

[0073] Next, the control unit 70 analyzes the transmitted image M and acquires the displacement of the center position and azimuth angle of the wafer W (Step 104 in FIG. 10 ). In analyzing the image M, first, a reference point R of the notch Wn is determined. To determine the reference point R, as shown in FIG. 12 , a circular arc (dashed line in FIG. 12 ) of the same diameter as the wafer W that overlaps with the outer periphery We is first set. Next, two straight lines (dashed lines in FIG. 12 ) that overlap with the line segments included in the formation portion of the notch Wn are set. Next, the coordinates of two intersection points Ra and Rb of the arc and straight lines set above are acquired. Next, the midpoint of the two intersection points Ra and Rb is calculated, and the coordinates of the midpoint are determined as the coordinates of the reference point R. By determining the reference point R using two points on the outer periphery We of the wafer W, it is possible to average and reduce the deviation of the reference point R due to deformation of the outer periphery We of the wafer W.

[0074] After determining the reference point R, as shown in FIG. Ｙ M, which is separated by a distance δ in the positive direction of the axis Ｘ The intersection of the line parallel to the axis (the dotted line in FIG. 13) and the outer periphery We is determined as the measurement point d. Ｙ When the coordinate is (py), M Ｙ A pixel on the outer periphery We having coordinates (py+δ) is determined as measurement point d.

[0075] As shown in the partially enlarged view of FIG. Ｙ If multiple pixels are included as intersections of the periphery We and the pixel area P, then M Ｘ A pixel having coordinates midway between the minimum and maximum coordinates is determined as measurement point d.

[0076] As shown in the partially enlarged view of FIG. Ｙ If there is no pixel of the outer periphery We on the line M Ｙ = (py + δ - 1) Ｘ The object with the largest coordinate and the line M Ｙ M pixels of the outer periphery We on =(py+δ+1) Ｘ A pixel having coordinates that are the midpoint between the smallest coordinate and the smallest coordinate is determined as measurement point d.

[0077] Next, the difference between the coordinates of the determined measurement point d and the coordinates of measurement point d' on the reference wafer is obtained. Measurement point d' on the reference wafer is determined in advance, for example, by capturing an image of the reference wafer aligned to a reference position with respect to the wafer holder 130 using a method similar to St101 to St104 in FIG. 10 to obtain a reference image, and then analyzing the reference image. At this time, reference point R' on the reference wafer is also determined. The dashed line in FIG. 13 indicates the outer periphery We' of the reference wafer.

[0078] Here, the coordinates of reference point R in image M may differ from the coordinates of reference point R' on the reference wafer in the image obtained by capturing an image of the reference wafer. In this case, the difference between the coordinates of reference point R and reference point R' on the reference wafer is obtained. Furthermore, with reference point R in image M and reference point R' on the reference wafer aligned (see FIG. 13), the difference between the coordinates of measurement point d and the coordinates of measurement point d' on the reference wafer is obtained.

[0079] Next, the center position and azimuth angle displacement of the wafer W are acquired. Specifically, the displacement of the center Wc of the wafer W from the center Wc' of the reference wafer and the displacement of the azimuth angle of the wafer W relative to the reference wafer are calculated from the determined reference point R and measurement point d, the reference point R' and measurement point d' of the reference wafer, the difference between the coordinates of the reference point R and the reference point R' of the reference wafer, and the difference between the coordinates of the measurement point d and the coordinates of the measurement point d' of the reference wafer. In this embodiment, the displacement of the azimuth angle is determined as the angle φ formed by the line segment connecting the center Wc of the wafer W to the reference point R and the line segment connecting the center Wc' of the reference wafer to the reference point R', as shown in FIG. 16 . In one embodiment, the displacement of the center Wc of the wafer W from the center Wc' of the reference wafer is also determined based on the difference between the reference point R and the reference point R' of the reference wafer and the angle φ.

[0080] Next, the position of the irradiation point P of the laser light L is corrected based on the acquired displacement of the center position and azimuth angle of the wafer W. As a premise, the position of the irradiation point P of the laser light L and the integrated irradiation amount or number of irradiations for each position are set in advance based on the waviness measurement results. More specifically, the position of the irradiation point P of the laser light L and the integrated irradiation amount or number of irradiations for each position are positions and integrated irradiation amounts or number of irradiations that can flatten the waviness of the wafer W when irradiated onto a wafer W held at a reference position in the wafer holding unit 130. Information including the position of the irradiation point P of the laser light L set corresponding to the reference position in the wafer holding unit 130 and the integrated irradiation amount or number of irradiations for each position is referred to as a "reference irradiation profile."

[0081] Here, if the laser beam L is irradiated according to the reference irradiation profile onto a wafer W that is displaced from its reference position in the wafer holding unit 130 and held thereon, the actual position of the waviness will differ, and the wafer W will not be flattened. Therefore, the reference irradiation profile of the laser beam L is corrected to cancel out the displacement of the center position and azimuth angle of the wafer W, and the position of the irradiation point P after the correction is determined. Information including the corrected position of the irradiation point P of the laser beam L is referred to as a "corrected irradiation profile."

[0082] As an example, consider a case where the horizontal position of the wafer W is displaced by a distance k in the X-axis direction from the reference position. In this case, if the X-coordinate of position A of an arbitrary irradiation point P in the reference irradiation profile is (X = a), the integrated irradiation dose at position A is σ, and the number of irradiations is n, position A is corrected by the distance k in the X-axis direction, and the X-coordinate of position A' of the corrected irradiation point P is (X = a + k), the integrated irradiation dose at position A' is σ, and the number of irradiations is n.

[0083] After determining the corrected irradiation profile of the laser beam L, laser processing in St2 is started. In laser processing, the laser beam L is irradiated from the laser irradiation unit 120 onto the entire surface or a selected portion of the first surface Wa of the wafer W in accordance with the corrected irradiation profile, thereby planarizing the first surface Wa. At this time, as shown in FIG. 7 , the laser irradiation unit 120 moves the irradiation point P of the laser beam L in the X-axis direction and also in the Y-axis direction. The laser irradiation unit 120 then irradiates the entire surface or a selected portion of the first surface Wa of the wafer W with the laser beam L. In this embodiment, since the displacement of the center position and azimuth angle of the wafer W is taken into consideration in addition to the waviness measurement results, the laser beam L can be irradiated in accordance with the actual waviness position of the wafer W in the wafer holder 130, as shown in FIG. 6 . As a result, the wafer W can be more accurately planarized.

[0084] When the laser irradiation unit 120 irradiates the entire surface or a selected portion of the first surface Wa with laser light L, the irradiation point P of the laser light L is moved in the X-axis direction and the Y-axis direction, and therefore the irradiation point P may deviate radially outward from the wafer W. The laser light L that has deviated from the wafer W is made to enter through the opening 141 of the beam damper 140 and is attenuated inside.

[0085] In one embodiment, the laser irradiation unit 120 and the wafer holding unit 130 are aligned in advance. To align the laser irradiation unit 120 and the wafer holding unit 130, a reference wafer having holes at its center and near its notch through which the guide laser can pass is used. This reference wafer is aligned to a reference position relative to the wafer holding unit 130 and placed on it. In this state, the laser irradiation unit 120 irradiates the reference wafer with a guide laser. First, the angle of the guide laser is varied around the hole provided at the center of the reference wafer, and a first angle of the guide laser is recorded when the guide laser beam passing through the hole is detected by, for example, a photodetector (not shown) provided on the upper surface 131 a of the stage 131. Next, the angle of the guide laser is varied around the hole provided near the notch of the reference wafer, and a second angle of the guide laser is recorded when the guide laser beam passing through the hole is detected by, for example, a photodetector (not shown) provided on the upper surface 141 a of the beam damper 140. From the first angle and the second angle, the relative positional relationship between the laser irradiation part 120 and the wafer holding part 130 can be calculated, and alignment can be performed.

[0086] Furthermore, the information on the relative positional relationship between the laser irradiation unit 120 and the wafer holding unit 130 calculated in this manner may be taken into consideration in addition to the displacement of the center position and azimuth angle of the wafer W held on the wafer holding unit 130. This allows the laser light L to be irradiated in a manner that more appropriately corresponds to the actual position of the waviness of the wafer W on the wafer holding unit 130. As a result, the wafer W can be flattened more accurately.

[0087] Next, another embodiment of the wafer processing apparatus 30 will be described. As shown in FIG. 17 , this embodiment includes three imaging units 250a-250c and a moving unit 251 that moves the imaging units 250a-250c in a direction parallel to the surface of the wafer W (XY plane). Each of the imaging units 250a-250c includes a line sensor 261, an illuminator 262, and a carrier 263. The illuminator 262 includes, for example, an LED. Each carrier 263 has a vertical portion and two horizontal portions, one above the other. The vertical portion is attached to a connector 264, the upper horizontal portion holds the line sensor 261, and the lower horizontal portion holds the illuminator 262. The line sensor 261 is attached to the upper horizontal portion of the carrier 263 facing downward so as to capture images in the negative direction of the Z axis. The illuminator 262 is attached to the lower horizontal portion of the carrier 263 facing upward so as to irradiate light in the positive direction of the Z axis. The two horizontal portions, one above the other, of the carrier 263 are arranged to sandwich the wafer W. That is, the line sensor 261 and the illuminator 262 are arranged to sandwich the wafer W from above and below. When not capturing images, the imaging units 250a to 250c are located at a second position P2 outside the chamber 110. The imaging units 250a to 250c are connected to one another by a connector 264, and the imaging units 250a to 250c move simultaneously when the moving unit 251 moves the connector 264. In one embodiment, the line sensor 261 is attached to a lower horizontal portion of the carrier 263 facing upward so as to capture images in the positive direction of the Z axis, and the illuminator 262 is attached to an upper horizontal portion of the carrier 263 facing downward so as to irradiate light in the negative direction of the Z axis.

[0088] When imaging is performed using imaging units 250a to 250c, with opening / closing cover 112 open, moving unit 251 moves connector 264 in the positive direction of the X axis from second position P2 shown by the solid line in Fig. 17 to move each line sensor 261 and illuminator 262 to first position P1 on the outer periphery of wafer W in chamber 110 as shown by the dotted line in Fig. 17. As a result, while line sensor 261 is being moved by moving unit 251 to first position P1 on the outer periphery of wafer W, it images an image of an imaging position including notch Wn and part of outer periphery We of wafer W from the upper surface side of wafer W.

[0089] In the measuring device 41 or alignment module 53 according to this embodiment, the position and azimuth angle of the wafer W are adjusted so that the wafer W is at a reference position on the wafer holding unit 130. Thereafter, the wafer transfer device 61 delivers the wafer W onto the wafer holding unit 130. Furthermore, one of the imaging units 250a to 250c, imaging unit 250b, is provided corresponding to the position of the notch Wn at the reference position of the wafer W on the wafer holding unit 130. As a result, one imaging unit 250b images the notch Wn at the imaging position.

[0090] In this embodiment, three imaging units 250a to 250c are provided, thereby making it possible to capture images of three points at predetermined relative positions including the notch Wn of the wafer W. In analyzing the captured images, the central position and azimuth angle displacement of the wafer W can be obtained based on these three points.

[0091] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0092] As an example, in the above embodiment, the line sensors 211 and 261 are used in the imaging units 200 and 250a to 250c, but any desired sensor capable of imaging or detecting the notch Wn and part of the outer periphery We of the wafer W may be used.

[0093] Furthermore, the imaging units 200, 250a-250c and the moving units 201, 251 are not limited to the wafer processing apparatus 30 equipped with the laser irradiation unit 120 according to this embodiment, and can be suitably used in other wafer processing apparatuses. As an example, in wafer processing apparatuses other than laser processing apparatuses, the displacement of a wafer held in a wafer holder whose relative position with respect to the processing unit of the wafer processing apparatus is fixed can be acquired. Furthermore, by taking the wafer displacement into consideration and correcting the processing conditions, such as changing the processing position in the processing unit, suitable processing can be performed. As another example, in other wafer processing apparatuses having a configuration in which the wafer holder 130 can slide or rotate, there may be issues such as not being able to install an imaging unit in the chamber or not being desirable, such as when the processing space within the chamber is narrow or when the atmosphere within the processing space may adversely affect the imaging units 200, 250a-250c. In such a case, the problem can be solved by using the imaging units 200, 250a to 250c and moving units 201, 251 of this embodiment, which are capable of moving between a second position P2 outside the chamber and a first position P1 inside the chamber.

[0094] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0095] 30 Wafer processing apparatus 120 Laser irradiation unit 130 Wafer holding unit 200 Imaging unit 201 Moving unit L Laser light W Wafer

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a substrate holding unit for holding the substrate; a laser irradiation unit for irradiating the substrate held by the substrate holding unit with laser light through a lens; an imaging unit; and a moving unit for moving the imaging unit between a first position where the substrate held by the substrate holding unit can be imaged and a second position different from the first position, wherein the relative position of the substrate holding unit with respect to the laser irradiation unit is fixed.

2. The substrate processing apparatus according to claim 1, wherein the first position of the imaging unit includes a position where a notch of the substrate and at least one measurement point on an outer peripheral portion of the substrate can be imaged.

3. The substrate processing apparatus according to claim 2, wherein the substrate holding unit includes holding pins for holding at least three points on a lower surface of the substrate, and a tip of each holding pin is provided with an adsorption mechanism for adsorbing the lower surface of the substrate.

4. The substrate processing apparatus according to claim 2, further comprising a chamber for forming a processing space between the laser irradiation unit and the substrate holding unit, wherein the first position is inside the chamber and the second position is outside the chamber.

5. The substrate processing apparatus according to claim 4, wherein the chamber has a loading / unloading port, and in a state where the loading / unloading port is open, the moving unit moves the imaging unit between the first position and the second position through the loading / unloading port.

6. The substrate processing apparatus according to any one of claims 2 to 5, further comprising a control unit, wherein the control unit: acquires an image by imaging the notch of the substrate and at least one of the measurement points on the outer peripheral portion using the imaging unit; and acquires displacements of a central position and an azimuth angle of the substrate with respect to a predetermined reference position based on coordinates of a reference point corresponding to the notch and coordinates of the measurement point on the image.

7. The substrate processing apparatus according to claim 6, wherein the control unit corrects a predetermined irradiation position of the laser light irradiated from the laser irradiation unit to the substrate based on the acquired displacements.

8. The control unit uses the imaging unit to image a reference substrate aligned with the reference position with respect to the substrate holding unit, and obtains a reference image including a notch of the reference substrate and at least one measurement point on the outer peripheral portion; and based on the coordinates of the reference point corresponding to the notch on the image and the coordinates of the measurement point, and the coordinates of the reference point corresponding to the notch of the reference substrate and the coordinates of the measurement point on the outer peripheral portion, obtains the displacement of the center position and the azimuth angle of the substrate with respect to the reference position. The substrate processing apparatus according to claim 6 executes control including this.

9. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus including a substrate holding unit that holds a substrate, a laser irradiation unit that irradiates the substrate held by the substrate holding unit with laser light via a lens, an imaging unit, and a moving unit that moves the imaging unit between a first position where the substrate held by the substrate holding unit can be imaged and a second position different from the first position. The relative position of the substrate holding unit with respect to the laser irradiation unit is fixed. The substrate processing method includes moving the imaging unit between the first position and the second position; using the imaging unit to image a notch of the substrate and at least one measurement point on the outer peripheral portion of the substrate to obtain an image; and based on the coordinates of the reference point corresponding to the notch on the image and the coordinates of the measurement point, obtaining the displacement of the center position and the azimuth angle of the substrate with respect to a predetermined reference position.

10. The substrate processing apparatus includes a chamber that forms a processing space between the laser irradiation unit and the substrate holding unit. The first position is inside the chamber, and the second position is outside the chamber. The substrate processing method includes conveying the substrate into the chamber and delivering it to the substrate holding unit; and after delivering the substrate to the substrate holding unit, moving the imaging unit between the first position and the second position. The substrate processing method according to claim 9 includes this.

11. The substrate processing method according to claim 9 or 10 includes correcting a predetermined irradiation position of the laser light irradiated from the laser irradiation unit to the substrate based on the obtained displacement.

Images