Plasma enhanced processing, and related processing chambers, methods, and systems for semiconductor manufacturing

Abstract

The present disclosure relates to plasma enhanced processing, and related processing chambers, methods, and systems for semiconductor manufacturing. In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate positioned in a process volume to form a layer on the substrate. The method includes maintaining the process volume at a pressure less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees Celsius or less.

Description

PLASMA ENHANCED PROCESSING, AND RELATED PROCESSING CHAMBERS, METHODS, AND SYSTEMS FOR SEMICONDUCTOR MANUFACTURINGBACKGROUNDField

[0001] The present disclosure relates to plasma enhanced processing, and related processing chambers, methods, and systems for semiconductor manufacturing.Description of the Related Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates includes depositing a material, such as a semiconductor material or a conductive material, on an upper surface of the substrate. For example, epitaxy is one deposition process that deposit films of various materials on a surface of a substrate in a processing chamber. During processing, various parameters can affect the uniformity of material deposited on the substrate.

[0003] However, processing can involve non-uniform ities, which can involve hindered device performance and / or reduced throughput. For example, activation of gases can be limited and / or can involve non-uniform activation, which can cause limited and / or non-uniform film growth, hydrogen desorption, and / or dopant concentration. The activation of gases and / or dopant concentration can be limited, for example, at relatively low processing temperatures and / or low pressures for device production (such as complementary field-effect transistor (CFET) devices). Moreover, relatively higher processing temperatures can involve unintended dopant diffusion and / or hindered device performance.

[0004] Therefore, a need exists for improved apparatuses and methods in semiconductor processing.SUMMARY

[0005] The present disclosure relates to plasma enhanced processing, and related processing chambers, methods, and systems for semiconductor manufacturing.

[0006] In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate positioned in a process volume to form a layer on the substrate. The method includes maintaining the process volume at a pressure less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees Celsius or less.

[0007] In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate positioned in a process volume to form a layer on the substrate. The flowing of the deposition precursor includes a first flow through a lid of the processing chamber, and a second flow through a sidewall of the processing chamber.

[0008] In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume, a first gas inlet formed in a sidewall of the chamber body, and a second gas inlet formed in a lid of the chamber body. The processing chamber includes a substrate support disposed in the processing volume, and one or more inductive coils disposed outside of the processing volume.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber, according to one or more embodiments.

[0011] Figure 2 is a schematic partial top cross-sectional view of the conductive plate shown in Figure 1 , according to one or more embodiments.

[0012] Figure 3 is a schematic side cross-sectional view of a processing chamber, according to one or more embodiments.

[0013] Figure 4A is a schematic view of a semiconductor layer during a passivation operation, according to one or more embodiments.

[0014] Figure 4B is a schematic view of a semiconductor layer during a plasma-enhanced deposition operation, according to one or more embodiments.

[0015] Figure 5 is a schematic block diagram view of a method of substrate processing for semiconductor manufacturing, according to one or more embodiments.

[0016] Figure 6 is a schematic block diagram view of a method of substrate processing for semiconductor manufacturing, according to one or more embodiments.

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0018] The present disclosure relates to plasma enhanced processing, and related processing chambers, methods, and systems for semiconductor manufacturing.

[0019] The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to bonding,embedding, welding, fusing, melting together, interference fitting, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to integrally forming. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0020] Figure 1 is a schematic side cross-sectional view of a processing chamber 100, according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102, and the processing chamber 100 is used to supply a plasma for plasma operations (such as plasma-assisted film deposition, ion implantation into the substrate 102, pre-cleaning of the substrate 102, etching of the substrate 102, and / or cleaning of the processing chamber 100). In one or more embodiments, the processing chamber 100 creates a cross-flow of precursors across a top surface 150 of the substrate 102. The processing chamber 100 is shown in a processing condition in Figure 1 .

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body is a substrate support 106, an upper plate 108, one or more heat sources 143, and a lower plate 110 (e.g., a lower window, for example a lower dome). The lower plate 110 is formed of an energy transmissive material, such as transparent quartz. At least part of the lower plate 110 can be opaque. In one or more embodiments, the upper plate 108 includes at least one opaque surface 171. In one or more embodiments, the plate 108 includes a transparent section 172 (two or more can be included) and an opaque section 173 (two or more can be included). In one or moreembodiments, the upper plate 108 is a window, such as an upper window, for example an upper dome. In such an embodiment, the plate 108 is formed of an energy transmissive material, such as transparent quartz. The one or more heat sources 143 include a plurality of lower heat sources 143 operable to heat a processing volume 136 from one side of the substrate 102 (e.g., from below the substrate 102). The chamber body and the plate 108 at least partially define the processing volume 136. In one or more embodiments, the lower heat sources 143 include lamps (such as halogen lamps or UV lamps). The present disclosure contemplates that other heat sources may be used (in addition to or in place of the lamps) for the various heat sources described herein. For example, resistive heaters, microwave powered heaters, light emitting diodes (LEDs), lasers (e.g., laser diodes), and / or or any other suitable heat source singly or in combination may be used for the various heat sources described herein.

[0022] The substrate support 106 is disposed in the processing volume 136 and between the upper plate 108 and the lower plate 110. The substrate support 106 is disposed above the one or more heat sources 143, and the substrate support 106 supports the substrate 102. The upper plate 108 is disposed between the substrate support 106 and a lid 154 of the processing chamber 100. In one or more embodiments, the substrate support 106 includes a susceptor. Other substrate supports (including, for example, a substrate carrier and / or one or more ring segment(s) that support one or more outer regions of the substrate 102) are contemplated by the present disclosure. The plurality of lower heat sources 143 are disposed between the lower plate 110 and a floor 152. The plurality of lower heat sources 143 form a portion of a lower heat source module 145.

[0023] The substrate support 106 can include one or more heaters 243 disposed within the substrate support 106. The heater(s) 243 may include a resistive heater. Other types of heaters are contemplated. The present disclosure contemplates that the heat sources 141 , 143 can be used in addition to the embedded heater(s) 243. The heater(s) 243 are configured to heat the substrate 102 disposed on the substrate support 106.

[0024] The processing volume 136 and a purge volume 138 are between the plate 108 and the lower plate 110. The processing volume 136 and the purge volume 138 are part of an internal volume of the processing chamber 100. One or more liners 111 , 163 are disposed inwardly of the chamber body.

[0025] The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is coupled to a shaft 118. In one or more embodiments, the substrate support 106 is coupled to the shaft 118 through one or more arms 119 coupled to the shaft 118. The shaft 118 is coupled to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0026] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are each sized to accommodate a lift pin 132 for lifting of the substrate 102 from the substrate support 106 before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from a process position to a transfer position. The lift pin stops 134 can include a plurality of arms 139 that attach to a shaft 135.

[0027] The flow module 112 includes one or more gas inlets 114 (e.g., a plurality of gas inlets), one or more purge gas inlets 164 (e.g., a plurality of purge gas inlets), and one or more gas exhaust outlets 116. The one or more gas inlets 114 are part of an inject portion 113 of the chamber body, and the one or more gas exhaust outlets 116 are part of an exhaust portion 115 of the chamber body. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116. A pre-heat ring 117 is disposed below the one or more gas inlets 114 and the one or more gas exhaust outlets 116. The pre-heat ring 117 is disposed above the one or more purge gas inlets 164. The pre-heat ring 117 can include a complete ring or one or more ring segments. The one or more liners 111 , 163 are disposed on an inner surface of the flow module 112 and protects the flow module 112 from reactive gasesused during deposition operations and / or cleaning operations. The gas inlet(s) 114 and the purge gas inlet(s) 164 are each positioned to flow a respective one or more process gases P1 and one or more purge gases P2 parallel to the top surface 150 of a substrate 102 disposed within the processing volume 136. The gas inlet(s) 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162. The one or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using the one or more process gas sources 151 can include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases P2 supplied using the one or more purge gas sources 162 can include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, the one or more process gases P1 include silicon phosphide (SiP) and / or phospine (PH3), and the one or more cleaning gases include hydrochloric acid (HCI).

[0028] The one or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 fluidly connects the one or more gas exhaust outlets 116 and the exhaust pump 157. The exhaust system 109 can assist in the controlled deposition of a layer on the substrate 102. The exhaust system 109 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112.

[0029] The processing chamber 100 includes the one or more liners 111 , 163 (e.g., a lower liner 111 and an upper liner 163). The flow module 112 (which can be at least part of a sidewall of the processing chamber 100) includes the one or more gas inlets 114 in fluid communication with the processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and a lower liner 111.

[0030] During a deposition operation (e.g., an epitaxial growth operation), the one or more process gases P1 flow through the one or more gas inlets 114, through the one or more gaps, and into the processing volume 136 to flow over the substrate 102.

[0031] The present disclosure also contemplates that the one or more purge gases P2 can be supplied to the purge volume 138 (through the one or more purge gas inlets 164) during the deposition operation, and exhausted from the purge volume 138. The one or more purge gases P2 flow simultaneously with the flowing of the one or more process gases P1. The one or more process gases P1 are exhausted through gaps between the upper liner 163 and the lower liner 111 , and through the one or more gas exhaust outlets 116. The one or more purge gases P2 can be exhausted through one or more outlet openings, and through the same one or more gas exhaust outlets 116 as the one or more process gases P1 . The present disclosure contemplates that that the one or more purge gases P2 can be separately exhausted through one or more second gas exhaust outlets that are separate from the one or more gas exhaust outlets 116.

[0032] During a cleaning operation, one or more cleaning gases flow through the one or more gas inlets 114, through the one or more gaps (between the upper liner 163 and the lower liner 111 ), and into the processing volume 136.

[0033] The plate 108 includes a plate opening 174. The processing chamber 100 includes a conduit 175 in fluid communication with the plate opening 174, and one or more energy sources 176, 178 operable to supply a plasma PS1 in the processing volume 136. In one or more embodiments, the one or more energy sources 176, 178 includes one or more radio frequency (RF) coils 177 disposed at least partially about the conduit 175, and one or more RF coils 180 disposed at least partially about one or more sidewalls of the processing chamber 100. A gas G1 flows through the conduit 175 while electrical power (such as an RF current) flows through the one or more RF coils 177, 180 such that a voltage is applied across the gas G1 . The voltage ignites the gas G1 into the plasma PS1. The plasma PS1 then flows into theprocessing volume 136. The gas G1 used to generate the plasma PS1 may include but is not limited to one or more of: hydrogen (H2), xenon (Xe?), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixtures thereof (such as xenon and neon). In one or more embodiments, the gas G1 includes one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetraclorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, the gas G1 includes one or more dopant gases, such as germane, diborane, and / or phosphorous. Other gases are contemplated for the gas G1 . The gas G1 can be supplied from a plasma gas source 179. The present disclosure contemplates that a voltage and / or a frequency of RF power applied to the one or more RF coils 177, 180 can be varied and / or pulsed. The frequency can involve a single frequency or multiple frequencies. The multiple frequencies can be combined.

[0034] The processing chamber 100 includes a conductive plate 187 disposed between the substrate support 106 and the plate 108. The conductive plate 187 includes a plurality of flow openings 188, and the plasma PS1 flows through the flow openings 188 and into the processing volume 136. The conductive plate 187 is formed of a conductive material. In one or more embodiments, the conductive material includes silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (such as anodized aluminum). The conductive plate 187 can function as an ion filter (e.g., an ion blocker plate) such that, as the plasma PS1 flows past the conductive plate 187, radicals flow through the flow openings 188 and past the conductive plate 187 while ions are at least partially blocked by the conductive plate 187 and conduct through the conductive plate and to ground through a ground electrode 189. The ground electrode 189 extends into the conductive plate 187 on a side aligned with the exhaust portion 115 of the processing chamber 100. In one or more embodiments, the conductive plate 187 is part of a showerhead that supplies one or more gases to the processing volume 136.

[0035] The plasma PS1 can be supplied in the processing volume 136 during the flowing of the one or more process gases P1 (e.g., deposition gasesand / or cleaning gases) to facilitate breaking bonds, e.g., for deposition on the substrate 102, cleaning of the substrate 102, and / or cleaning of inner surfaces of the processing chamber 100. The plasma PS1 can be supplied in the processing volume 136 before the flowing of the one or more process gases P1 (e.g., to pre-clean the substrate 102), or after the flowing of the one or more process gases P1 (e.g., to etch the substrate 102, supply ions into the substrate 102, and / or to clean the processing chamber 100). The present disclosure contemplates that the one or more process gases P1 can be supplied through the conduit 175 and / or the one or more gas inlets 114 can be omitted. The present disclosure also contemplates that the plasma PS1 can be supplied through the one or more gas inlets 114 and / or the energy source 176 can be omitted or disposed adjacent to the flow module 112.

[0036] The processing chamber 100 includes one or more sensor devices 195, 196, 197, 198 (e.g., metrology sensors, and / or temperature sensors) configured to measure parameter(s) (e.g., temperature(s)) within the processing chamber 100 and / or metrology parameter(s) of the substrate 102). In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more outer sensor devices 195, 197, 198. A controller 190 (described below) can control the one or more sensor devices 195, 196, 197, 198, and can conduct method(s) analyzing uniformity of substrate processing using at least one of the one or more sensor devices 195, 196, 197, 198. In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 each include a sensor that includes one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, one or more of the sensor devices195, 196, 197, 198 is a pyrometer and / or optical sensor, such as an optical pyrometer. The present disclosure contemplates that sensor devices other than pyrometers may be used, and / or one or more of the sensor devices 195,196, 197, 198 can measure properties (such as metrology properties) other than temperature. For example, one or more of the sensor devices 195, 196,197, 198 can measure one or more gas parameters and / or one or more plasmaparameters (such as ion density, electron temperature, electron density, ion energy and angle distribution, enthalpy, radical density, and / or absorption). In one or more embodiments, one or more of the sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, Faraday cup, and / or an absorption spectrometer.

[0037] In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent the lid 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent the floor 152. The present disclosure contemplates that at least one of the one or more lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 196, 197 (such as outer sensor device 197).

[0038] The present disclosure contemplates that all sensor devices can be disposed above the upper plate 108 and / or on or adjacent to the lid 154. For example, the one or more lower sensor devices 195 can be omitted. The one or more upper sensor devices 196, 197, 198 can view through an opening defined by the conduit 175 and / or the transparent section(s) 172 of the plate 108.

[0039] The respective sensor devices 195, 196, 197, 198, can be a singlewavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensor devices, in addition to the sensor devices 195, 196, 197, 198. In one or more embodiments, the process chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, 198.

[0040] As shown, a controller 190 is in communication with the processing chamber 100 and is used to control processes and methods, such as theoperations of the methods described herein. The controller 190 is configured to receive data or input as sensor readings from sensor(s) (such as one or more of the sensor devices 195, 196, 197, 198). The sensor devices can include, for example: sensor devices that monitor growth of layer(s) on the substrate 102; and / or sensor devices that monitor temperatures of the substrate 102, the preheat ring 117, the substrate support 106, and / or the liners 111 , 163. As an example, one or more sensor devices 195, 196, 197, 198 can measure temperatures of the substrate 102 and / or the pre-heat ring 117, and power to the one or more heat sources 143 and / or the energy source 176 can be controlled based on the measured temperatures (e.g., using a feedback control). As described the one or more sensor devices can include, for example pyrometers. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) can be used in addition to or in place of the pyrometers, and power to the one or more heat sources 143 and / or the energy source 176 can be controlled based on the measured temperatures (e.g., using a feedback control).

[0041] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various items directly, or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicatively coupled to dedicated controllers, and the controller 190 functions as a central controller.

[0042] The controller 190 is of any form of a general-purpose computer processor that is used in an industrial setting for controlling various substrate processing chambers and equipment, and sub-processors thereon or therein. The memory 191 , or non-transitory computer readable medium, is one or more of a readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1 , DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuits 192 of the controller 190 are coupled to the CPU 193 for supporting theCPU 193. The support circuits 192 include cache, power supplies, clock circuits, input / output circuitry and subsystems, and the like. Operational parameters (e.g., a power supplied to the one or more heat sources 143 and / or the energy source 176, a cleaning recipe, and / or a processing recipe) and operations are stored in the memory 191 as a software routine that is executed or invoked to turn the controller 190 into a specific purpose controller to control the operations of the various chambers / modules described herein. The controller 190 is configured to conduct any of the operations (such as operations of the method 500 and / or the method 600) described herein. The instructions stored on the memory, when executed, cause one or more of the operations (such as operations of the method 500 and / or the method 600) described herein to be conducted in relation to the processing chamber 100. The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.

[0043] The various operations described herein can be conducted automatically using the controller 190, or can be conducted automatically or manually with certain operations conducted by a user.

[0044] The controller 190 is configured to control power to the one or more heat sources 143 and / or the energy source(s) 176, 178, the deposition, the cleaning, the rotational position, the heating, and gas flow through the processing chamber 100 by providing an output to the controls for the sensor devices 195, 196, 197, 198, the one or more heat sources 143 and / or the energy source 176, the process gas source 151 , the purge gas source 162, the motion assembly 121 , and / or the exhaust pump 157.

[0045] During processing, in one or more embodiments, the substrate 102 is heated to a target temperature of 600 degrees Celsius or less, such as 500 degrees Celsius or less. In one or more embodiments, the target temperature for the substrate 102 is within a range of 200 degrees Celsius to 500 degrees Celsius, such as 380 degrees Celsius to 500 degrees Celsius, for example 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature for the substrate 102 is less than 500 degrees Celsius. In one or more embodiments, the target temperature for the substrate 102 is 400degrees Celsius or less, such as 200 degrees Celsius or less (for example about 150 degrees Celsius).

[0046] The one or more heat sources 143 include a plurality of heat sources 143a-143c disposed below the substrate support 106 and below the lower plate 110. The heat sources 143a-143c can be arranged in a plurality of levels 181 - 183 (as shown in Figure 1 ) or can be disposed in the same level. One or more reflectors 184, 185, 186 can be disposed inwardly of the respective heat sources 143a-143c. The heat sources 143a-143c can be arranged in a plurality of zones 186-188 (three zones are shown in Figure 1 ). The present disclosure contemplates that one or more zones can be used. The heat sources 143a- 143c can be oriented horizontally, vertically, and / or at an angle.

[0047] Figure 2 is a schematic partial top cross-sectional view of the conductive plate 187 shown in Figure 1 , according to one or more embodiments.

[0048] A sleeve 201 is disposed about the ground electrode 189. The sleeve 201 can be disposed in the upper liner 163 and the flow module 112. The conductive plate 187 can be an ion blocker plate, such as an ion filter.

[0049] Figure 3 is a schematic side cross-sectional view of a processing chamber 300, according to one or more embodiments. The processing chamber 300 is similar to the processing chamber 100 shown in Figure 1 , and includes one or more aspects, features, components, operations, and / or properties thereof. Cross-sectional hatching is not shown in Figure 3 for visual clarity purposes.

[0050] A chamber body of the processing chamber 300 includes one or more sidewalls 301 , a floor 302, and lid 303. The chamber body at least partially defines an internal volume that includes a processing volume 305. A showerhead 307 including a plurality of openings can be disposed in the internal volume. The showerhead 307 (if used) can divide the processing volume 305 into an upper section and a lower section. The present disclosure contemplates that the showerhead 307 is optional and can be omitted. One or more first gas inlets 308, 309 (a plurality is shown) are formed at least partiallyin the one or more sidewalls 301. For example, the second gas inlet 310 can be part of a conduit disposed through the lid 303. The one or more inductive coils 177, 180 are disposed outside of the processing volume 305. One or more first coils 177 (e.g., upper coils) are positioned above the lid 303, and one or more second coils 180 (e.g., side coils) are coiled at least partially about the processing volume 305.

[0051] A remote plasma source (RPS) 320 is mounted to the lid 303. A first RF source 331 supplies RF power to the one or more upper coils 177, a second RF source 332 supplies RF power to the one or more side coils 180, and a third RF source 333 supplies RF power to the RPS 320. The RPS 320 includes one or more housings 321 through which a plasma ignition gas (such as argon and / or helium) and / or a process gas (such as argon, hydrogen, nitrogen, and / or oxygen) is supplied. In one or more embodiments, the plasma ignition gas is ignited into a plasma within the RPS 320, and the process gas can flow to interact with the plasma. The plasma can interact with the process gas to form a plasma gas P3. As such, the plasma gas P3 can include effluents of the process gas, such as radicals (for example argon radicals, hydrogen radicals, oxygen radicals, and / or nitrogen radicals) and / or ions (for example argon ions, hydrogen ions, oxygen ions, and / or nitrogen ions).

[0052] The present disclosure also contemplates that the plasma gas P3 flowing into the processing volume 305 can include the ignited plasma itself. The one or more process gases P1 (which can include a deposition precursor and / or a cleaning precursor) can flow to interact with the plasma gas P3 in the processing volume 305. A fourth RF source 334 is coupled to the processing chamber 300 through the one or more sidewalls 301. In one or more embodiments, the fourth RF source 334 is coupled to supply RF power to the substrate support 106. The RF sources 331 -334 can independently supply RF power to the coils 177, 180 and / or other component(s) of the processing chamber 300. In one or more embodiments, a second frequency (e.g., 2.0 MHz to 2.2 MHz, such as 2.1 MHz) of the second RF source 332 is greater than a first frequency (e.g., 1.8 MHz to 2.0 MHz, such as 1.9 MHz) of the first RF source 331 , a fourth frequency (e.g., greater than 5.0 MHz, such as 13.56 MHz)of the fourth RF source 334 is greater than the second frequency, and a third frequency (e.g., greater than 1 .0 GHz, such as 2.45 GHz) of the third RF source 333 is greater than the fourth frequency.

[0053] As described, a first flow F1 flows through the second gas inlet 310, and a second flow F2 flows through the one or more first gas inlets 308, 309. As shown, the first flow F1 includes the one or more process gases P1 and the second flow F2 includes a plasma gas P3. In addition to or in place of the first gas inlets 308, 309, the one or more process gases P1 can flow through the lid 303 (e.g., through the second gas inlet 310) as part of the first flow F1. In one or more embodiments, the first flow F1 (e.g., the plasma gas P3) includes a first flow rate, and the second flow F2 (e.g., the one or more process gases P1 ) includes a second flow rate greater than the first flow rate. In one or more embodiments, the second flow rate is a ratio of the first flow rate, and the ratio is at least 2.0, such as at least 3.0. In one or more embodiments, the second flow F2 includes a deposition precursor and a third flow F3 flows through the one or more first gas inlets 308, 309 and / or the second gas inlet 310. In one or more embodiments, the third flow F3 (e.g., the etchant precursor) has a third flow rate that is equal to or lesser than the first flow rate of the first flow F1 . The present disclosure contemplates that a ratio of the second flow rate of the second flow F2 to the first flow rate of the first flow F1 can be within a range of 0.001 to 1 ,000.0. The present disclosure contemplates that a ratio of the second flow rate of the second flow F2 to the third flow rate of the third flow F3 can be within a range of 0.001 to 1 ,000.0.

[0054] The gases P1 , P3 can be exhausted through the floor 302 using a valve 318 (such as a throttle valve) and a pump 319 (such as a vacuum pump and / or a turbo pump). A blocker plate 330 including a plurality of openings is disposed between the substrate support 106 and the floor 302. The gases P1 , P3 can flow through the openings of the blocker plate 330 prior to exhausting through the valve 318 and the pump 319. The processing chamber 300 can be used as an epitaxial deposition chamber, an atomic layer deposition (ALD) chamber, a plasma enhanced chemical vapor deposition (PECVD) chamber,an etch chamber, a dielectric deposition chamber, or any other chamber, such as any other plasma-capable deposition chamber.

[0055] Figure 4A is a schematic view of a semiconductor layer 420 during a passivation operation, according to one or more embodiments. An exposed surface of a semiconductor layer 420 of substrate 102 is subjected to hydrogen passivation, leaving hydrogen atoms 430 on the surface of the semiconductor layer 420. Although FIG. 4A illustrates the semiconductor layer 420 as silicon atoms 422 arranged in a crystalline array, other semiconductors could be used. Hydrogen passivation may not entirely complete, so some dangling bonds 432 may still be present.

[0056] Figure 4B is a schematic view of a semiconductor layer 420 during a plasma-enhanced deposition operation, according to one or more embodiments. Ions 440 generated by the plasma can bombard the substrate, breaking the bonds between the hydrogen and underlying semiconductor and thus desorbing the hydrogen (shown at A). The substrate bombardment by energetic ions also enhances the adatom surface mobilities, which enables epitaxial growth to be carried out at low temperatures. In addition, neutral radials 442 generated by the plasma can disassociate the semiconductor precursor 444 (shown at B), generating radical precursors 446 despite the low temperature. For example, silane (SiH4) can form SiHx. These semiconductorcontaining radical precursors migrate to growth sites on the surface, e.g., locations with free dangling bonds 432, and the semiconductor atom 424 (e.g., silicon) bonds with an atom 422 of semiconductor material in the layer 420, causing growth of the semiconductor layer (shown at C). The reaction of the precursor or radical precursor with the semiconductor can cause further hydrogen desorption (shown at D). Moreover, some ions 440, e.g., H+, can penetrate the surface of the semiconductor layer and cause annealing and crystallization (shown at E). At proper processing conditions, this can result in growth of a single crystalline layer on the substrate 102.

[0057] Figure 5 is a schematic block diagram view of a method 500 of substrate processing for semiconductor manufacturing, according to one or more embodiments.

[0058] Operation 502 of the method 500 includes heating a substrate positioned on a substrate support of a processing chamber from one side of the substrate. The heating can be conducted using for example, laser sources, radiation sources (such as lamps), resistive heaters, and / or other heat sources. The present disclosure contemplates that any heat sources may be used. The heating can be conducted using for example, infrared radiation, ultraviolet radiation, microwave radiation, or any other energy. The heating includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or less. Other temperatures are contemplated, such as temperatures within a range of 150 degrees Celsius to 1 ,600 degrees Celsius.

[0059] Operation 503 includes supplying a plasma product in a processing volume of the processing chamber. The plasma product can be generated in the processing volume (e.g., in-situ) and / or can be generated outside of the processing volume (e.g., as part of a remote plasma source (RPS)) and then flowed into the processing volume. The plasma product can include an ignited plasma and / or can include plasma effluent(s) (such as ions and / or radicals). As an example, a plasma can be generated and can interact with the substrate and / or process gases that process the substrate. As another example, a first gas (such as argon and / or helium) can ignite into a plasma and then a second gas (such as oxygen, hydrogen, and / or nitrogen) can interact with the plasma to generate plasma effluent(s). The plasma effluent(s) can interact with the substrate and / or process gases that process the substrate.

[0060] Operation 504 includes maintaining the processing volume at a pressure. In one or more embodiments, the pressure is maintained to be less than 60 Torr, such as within a range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained to be less than 1 Torr, such as within a range of 5 mTorr to 50mTorr, for example within a range of 0 Torr to 5 mTorr, or 5 mTorr to 20 mTorr. In one or more embodiments, the pressure is maintained to be 100 mTorr or less. Other pressures are contemplated, such as 1 mTorr to 760 Torr (e.g., atmospheric pressure) or higher.

[0061] Operation 505 includes flowing one or more process gases over the substrate. In one or more embodiments, the plasma product of operation 503 is supplied during the flowing of the one or more process gases of operation 505, and the plasma product interacts with the one or more process gases and / or the plasma product flows over the substrate. In one or more embodiments, the plasma product of operation 503 is supplied before or after the flowing of the one or more process gases of operation 505. The process gases can flow laterally across the substrate. The process gases can deposit layer(s) on the substrate, pre-clean the substrate, post-clean the substrate, etch the substrate, and / or clean components of the process chamber.

[0062] Operation 506 includes depositing one or more layers on the substrate. In one or more embodiments, the plasma product of operation 503 is supplied during the depositing of operation 506. In one or more embodiments, the plasma product of operation 503 is supplied before or after the depositing of operation 506. The deposition can involve, for example, forming layers include silicon and / or germanium on exposed silicon surfaces of the substrate. The layers can include one or more dopants (such as boron). The deposition of operation 506 can be replaced with substrate cleaning, chamber cleaning, and / or substrate etching. The deposition of operation 506 can be used in addition to substrate cleaning, chamber cleaning, and / or substrate etching.

[0063] Figure 6 is a schematic block diagram view of a method 600 of substrate processing for semiconductor manufacturing, according to one or more embodiments. In one or more embodiments, the method 600 includes plasma-enhanced epitaxial deposition to deposit a layer on a substrate.

[0064] Operation 602 includes pre-cleaning a substrate. The semiconductor substrate can initially have an oxide layer, e.g., a native oxide layer, formed on a surface of the substrate. The substrate can also have remnants of prior fabrication processes, e.g., photoresist, etc. The substrate can be subjected to the pre-cleaning to remove the oxide and other contaminants. For example, the substrate can be subject to a remote plasma assisted dry etch process, e.g., a dry etch using NF3 and NH3, such as a Siconi™ etch. This plasma etchcan be followed by an annealing operation, e.g., at 80-150°C. Alternatively or in addition, the substrate can be subject to wet etching using dilute HF (e.g., at 1 :100 for 0.5-5 minutes).

[0065] Operation 604 includes passivating the substrate.

[0066] Optional operation 612 includes raising a target temperature for the substrate by heating the substrate. In one or more embodiments, the target temperature is raised to be within a range of 200 degrees Celsius to 600 degrees Celsius. As an example, the one or more heat elements 243 in the substrate support 106 (e.g., the pedestal) can be set to a temperature within a range of 350-450°C.

[0067] In one or more embodiments, the substrate is maintained at an ambient room temperature.

[0068] Optional operation 614 includes flowing a carrier gas into the processing chamber. The carrier gas can include for example Ar, H2, N2, He, or a mixture thereof. A flow rate of the carrier gas can be 0.5-1 OOOsccm, and a pressure of the processing volume is maintained at 1 mTorr to 500 mTorr, e.g., by throttle valve controlled pumping. In one or more embodiments, the carrier gas includes argon and flows at a flow rate of 50 seem to 200 seem.

[0069] Operation 616 includes igniting a plasma. The plasma is ignited and maintained, e.g., at a power of 100-5,000 Watts. For example, the plasma can be maintained throughout operations 618 and / or 620. The plasma can be an inductively coupled plasma, a capacitively coupled plasma, or a combination of inductive coupling and capacitive coupling can be used. The plasma can be generated by a remote plasma source, and have effluents (such as radicals and / or ions). The plasma can be any type of plasma and / or can be generated in any manner. For example, the plasma can be generated using radio frequency energy, direct current energy, and / or microwave energy. As another example, the plasma can be generated using constant electric fields, alternating electric fields, and / or electromagnetic fields. The plasma can be generated in- situ and / or in a remote plasma source (RPS).

[0070] The igniting of the plasma includes applying a first power to the one or more top coils 177 (Figures 1 and 3). The first RF power is within a range of 100 W to 5,000 W. In one or more embodiments, the first power is 400-2,400 W (e.g., 400-1 ,200 W). The igniting of the plasma includes applying a second power to the one or more side coils 180 (Figures 1 and 3). The second power is greater than the first power. The second RF power is a ratio of the first RF power, and the ratio is at least 1 .75, such as about 2.0 or higher. In one or more embodiments, the second power is about twice the power of the top coil, e.g., 800-4,800 W (for example, 800-2400 W).

[0071] Operation 618 includes flowing a process gas (such as a deposition precursor, for example a semiconductor precursor) into the processing chamber. In one or more embodiments, the process gas includes a cleaning precursor. In one or more embodiments, one or more semiconductor precursors, e.g., a silicon precursor, can be introduced to the processing chamber in operation 618. Example of precursors include SiF , Si2He, SiFhCF, Si4H 1 o, SisHs, SiHCh, Si Cl4, or a mixture of two or more thereof. A flow rate for the process gas can be 0.5 seem to 50 seem, such as 5-10 seem. In one or more embodiments, the process gas includes silicon (such as Si2He) and flows at a total flow rate of 5 seem to 10 seem. In one or more embodiments, the process gas includes a deposition precursor (such as DCS) and an etch precursor (such as HCI).

[0072] Optional operation 620 includes flowing a dopant precursor into the processing chamber. A flow rate of the dopant precursor gas can be 0.5 seem to 100 seem. Examples of dopant precursor gases include phosphine (PH3), arsine (AsHs), nitrogen (N2), ammonia (NH3), germane (GeF ), borane (BH3), diborane (B2H6), disilabutane (C2H Si2), trisilapentane or trimethyl gallium (Ga(CH3)3), triethylgallium (Ga(C2Hs)3), aluminium chloride (AICI3), triethylaluminium (CeHisAI), trimethylaluminium (C6H18AI2), methylsilane (CHsSiHs), indium chloride (InCh), gallium trichloride (GaCh), sodium oxalate (Na2C2O4), rrimethylindium ((CH3)3ln), phosphorus trichloride (PCI3), lithium triethylborohydride LiBH ((C2Hs)3), tris(trimethylsilyl)-arsine (As(TMS)3), tertiarybutylarsine (TBAs), dibutyl sebacate (DBS), dioctylamine (DOA),myristic acid (MA), methyl myristate (MM), tri(di-tert -butylphosphino)gallane (Ga(PtBu2)3), hexadecylamine (HAD), indium acetate (In(Ac)s), oleic acid (OA), 1 -octadecene (ODE), 1 -octylamine (OTA), palmitic acid (PA), tris(trimethylsilyl)- phosphine (P(TMS)s), trioctylamine (TOA), trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), bisazido dimethylaminopropyl gallium (BAZIGA), trimethylgallium (TMGa), trimethylaluminum (TMAI), and triethylantimony (TESb), or combination(s) of two or more thereof.

[0073] The present disclosure contemplates that the dopant can be omitted, and the process can grow single crystalline silicon. Use of the dopant can grow single crystalline SiP, SiGe, SiBGe, SiC SiGeC, or SiB. The process may be applicable to other semiconductors, such as InP, InAs, InSb, GaP, GalnP, GaAs, and GaN, and / or doped versions thereof. The method 600 can be used for plasma enhanced epitaxial deposition to grow single crystal silicon at growth rates greater than 10nm / min (e.g., 20-25nm / min), and with a refractive index of 6-7, which can indicate a low level of defects.

[0074] The present disclosure contemplates that the operations of the methods 500, 600 can be conducted sequentially, or at least some of the operations can be conducted at least partially simultaneously. For example, operations 502, 504 and operations 618, 620 can be conducted simultaneously.

[0075] The present disclosure contemplates that one or more operations of the method 500 can be combined with one or more operations of the method 600 as part of a combined method. For example, the combined method can include conducting operations 602 and 604, then operation 502 (which can include operation 612), then operations 614 and 503 (which can include operation 616), then operations 504-506 (which can include operations 618), then operation 620.

[0076] The method 500 and / or the method 600 can be conducted using the processing chamber 100 and / or the processing chamber 300 described herein. The present disclosure contemplates that the method 500 and / or the method 600 can include one or more of the following Examples 1 -9:

[0077] Example 1. In one or more embodiments that provided beneficial growth rate and refractive index, the substrate was at 400°C, the top coil was powered at 1000W, the side coil was powered at 2000W, the chamber had a pressure of 10 mTorr, the flow rate of Si2He precursor from the top was 2 seem, the flow rate of Si2He precursor from the side was 6 seem, and an argon carrier was injected.

[0078] Example 2. In one or more embodiments that provided beneficial growth rate and refractive index, the substrate was at 400°C, the top coil was powered at 500W, the side coil was powered at 1000W, the chamber had a pressure of 10 mTorr, the flow rate of Si2He precursor from the top was 3 seem, the flow rate of Si2He precursor from the side was 7 seem, and an argon carrier was injected..

[0079] Example 3. In one or more embodiments that provided beneficial growth rate and refractive index, the substrate was at 400°C, the top coil was powered at 600W, the side coil was powered at 1200W, the chamber had a pressure of 10 mTorr, the flow rate of Si2He precursor from the top was 3 seem, the flow rate of SiH4 precursor from the side was 7 seem, and a hydrogen carrier was injected.

[0080] Examples 4 and 5. In one or more embodiments that provided beneficial growth rate and refractive index, the processing conditions were the same as Example 3, but HCI was added at 1 seem or 3 seem. This resulted in a slightly higher refractive index and reduced or eliminated loss in growth rate.

[0081] Example 6. In one or more embodiments that provided beneficial growth rate and refractive index, the substrate was at 400°C, the top coil was powered at 600W, the side coil was powered at 1200W, the chamber had a pressure of 10 mTorr, the flow rate of DCS precursor from the top was 3 seem, the flow rate of DCS precursor from the side was 7 seem, and a hydrogen carrier was injected.

[0082] Examples 7, 8 and 9. In one or more embodiments that provided beneficial growth rate and refractive index, the processing conditions were the same as Example 6, and HCI was added at 1 seem, 3 seem, or 5 seem,respectively. Higher HCI flow rates resulted in a decrease of growth rate (albeit still above 10nm / min). However, a bright-field scanning tunneling electron microscope image indicated lower defect density than no HCI or 3 seem of HCI.

[0083] Benefits of the present disclosure include reliable gas activation and processing (such as at relatively low processing temperatures); adjustability of gas activation; enlarged selectivity windows; modularity of using plasma operations and epitaxial deposition operations in a single chamber; modularity in chamber application; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in an outer region of the substrate); reduced gas consumption and gas waste; increased growth rates (e.g., at low temperatures and / or low pressures); enhanced and more uniform film growth and / or dopant concentration with reduced micro loading. As an example, ions and / or radicals can be used to activate gases for processing in addition to or in place of electromagnetic radiation (such as infrared radiation and / or ultraviolet radiation). Benefits further include plasma-enhanced epitaxy with reduced or eliminates substrate defects, higher growth rates (e.g., >100A / min) at low substrate temperatures (e.g., <500°C) and / or lower process pressures (e.g., <100mT).

[0084] Benefits also include enhanced device performance; enhanced hydrogen desorption; reduced or eliminated occurrences of unintended dopant diffusions; efficient processing; and increased throughput. As an example, the gas activation is facilitated for substrate target temperatures less than 500 degrees Celsius, such as target temperatures within a range of 380 degrees to 500 degrees Celsius. For example, gas can be activated for processing operations when the substrate is at about 400 degrees Celsius. Semiconductor layers, including doped semiconductor layers, can be grown epitaxially at low substrate temperatures, e.g., at <400°C, and at low pressure, e.g., <100mT process chamber pressure. Moreover, the layers can be grown without sacrificing growth rate or even at a higher growth rate, e.g., >100A / min, than traditional thermal epitaxy. The technique can be applied for example to Si, SiP, SiGe, SiBGe, SiC, SiGeC, and / or SiB epitaxy.

[0085] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations and / or properties of the processing chamber 100; the conductive plate 187; the controller 190; the conduit 175, the energy source 176, the one or more coils 177, 180, the processing chamber 300, the process of Figure 4A, the process of Figure 4B, the method 500, and / or the method 600 may be combined. Moreover, it is contemplated that one or more aspects disclosed herein may include some or all of the aforementioned benefits.

[0086] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:1 . A method of substrate processing, comprising: igniting a plasma; flowing a deposition precursor to interact with the plasma; flowing the deposition precursor over a substrate positioned in a processing volume to form a layer on the substrate; maintaining the process volume at a pressure less than 100 mTorr; and heating the substrate to a target temperature of 500 degrees Celsius or less.

2. The method of claim 1 , wherein the layer includes a single crystalline material.

3. The method of claim 1 , wherein igniting the plasma comprises applying radiofrequency (RF) power to one or more sources disposed outside of the processing volume.

4. The method of claim 3, wherein the one or more sources include one or more first coils and one or more second coils, a first RF power is applied to the one or more first coils, a second RF power is applied to the one or more second coils, and the second RF power is greater than the first RF power.

5. The method of claim 4, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1 .75.

6. The method of claim 4, wherein the first RF power is within a range of 100 W to 5,000 W.

7. The method of claim 1 , wherein the pressure is within a range of 5 mTorr to 50mTorr.

8. The method of claim 1 , wherein the target temperature is an ambient room temperature.

9. The method of claim 1 , wherein the pressure is within a range of 5 mTorr to 20 mTorr, and a total flow rate of the deposition precursor is within a range of 5 seem to 10 seem.

10. The method of claim 1 , further comprising, prior to the flowing of the deposition precursor, cleaning an exposed surface of the substrate to remove an oxide.

11. A method of substrate processing, comprising: igniting a plasma; flowing a deposition precursor to interact with the plasma; and flowing the deposition precursor over a substrate positioned in a process volume to form a layer on the substrate, the flowing of the deposition precursor comprising: a first flow through a lid of the processing chamber, and a second flow through a sidewall of the processing chamber.

12. The method of claim 11 , wherein the first flow includes a first flow rate, and the second flow includes a second flow rate greater than the first flow rate.

13. The method of claim 12, wherein the second flow rate is a ratio of the first flow rate, and the ratio is at least 2.0.

14. The method of claim 12, further comprising flowing an etchant precursor into the process volume, the etchant precursor having a third flow rate that is equal to or lesser than the first flow rate.

15. The method of claim 11 , further comprising heating the substrate to a target temperature of 500 degrees Celsius or less.

16. A processing chamber, comprising: a chamber body at least partially defining a processing volume;a first gas inlet formed in a sidewall of the chamber body; a second gas inlet formed in a lid of the chamber body; a substrate support disposed in the processing volume; and one or more inductive coils disposed outside of the processing volume.

17. The processing chamber of claim 16, wherein the one or more inductive coils comprise: one or more upper coils positioned above the lid; and one or more side coils coiled at least partially about the processing volume.

18. The processing chamber of claim 17, further comprising a remote plasma source mounted to the lid of the processing chamber.

19. The processing chamber of claim 18, further comprising a controller comprising instructions that, when executed, cause: applying a first RF power to the one or more upper coils; and applying a second RF power to the one or more side coils, wherein the second RF power is greater than the first RF power.

20. The processing chamber of claim 19, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1 .75.

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