Semiconductor device

Abstract

This semiconductor device comprises a support, a first semiconductor element, a second semiconductor element, a first conductive member including a first terminal part, a second conductive member including a second terminal part, a third conductive member including a third terminal part, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. The plurality of first control terminals and the plurality of second control terminals protrude from the sealing resin on a first side in the thickness direction. The first terminal part and the second terminal part are exposed from the sealing resin on a first side in a first direction orthogonal to the thickness direction. The third terminal part is exposed from the sealing resin on a second side in the first direction. The second conductive member is supported by the support.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. Patent Document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes input and output terminals through which a main current to be switched flows, and a plurality of control terminals.

[0003] Japanese Patent Application Laid-Open No. 2021-190505

[0004] [Summary] It is preferable that the input terminals, output terminals, and a plurality of control terminals are appropriately arranged.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that allows for more appropriate arrangement of terminals.

[0006] A semiconductor device according to one aspect of the present disclosure includes a support, a first semiconductor element having a first electrode that is a positive electrode of a current path to be switched, a second electrode that is a negative electrode, and a third electrode for switching the conduction state of the first electrode and the second electrode, a second semiconductor element having the first electrode that is a positive electrode of the current path to be switched, the second electrode that is a negative electrode, and a third electrode for switching the conduction state of the first electrode and the second electrode, a first conductive member including a first terminal portion, a second conductive member including a second terminal portion, a third conductive member including a third terminal portion, a plurality of first control terminals, any one of which is conductive to the third electrode of the first semiconductor element, a plurality of second control terminals, any one of which is conductive to the third electrode of the second semiconductor element, and a sealing resin. The first conductive member is conductive to the first electrode of the first semiconductor element. The second conductive member is conductive to the second electrode of the second semiconductor element. The third conductive member is electrically connected to the second electrode of the first semiconductor element and the first electrode of the second semiconductor element. The plurality of first control terminals and the plurality of second control terminals protrude from the sealing resin on a first side in the thickness direction. The first terminal portion and the second terminal portion are exposed from the sealing resin on a first side in a first direction perpendicular to the thickness direction. The third terminal portion is exposed from the sealing resin on a second side in the first direction. The second conductive member is supported by the support body.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a partial side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 9 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a partially enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 13 is a partially enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 4. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 4. FIG. 17 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 18 is a circuit diagram showing the semiconductor device according to the first embodiment of the present disclosure. FIG. 19 is a system configuration diagram showing a vehicle equipped with the semiconductor device according to the first embodiment of the present disclosure. FIG. 20 is a partially enlarged cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 21 is a partially enlarged cross-sectional view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 22 is a partially enlarged cross-sectional view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 23 is a partial plan view showing the semiconductor device according to the second embodiment of the present disclosure. FIG. 24 is a partial perspective view showing the semiconductor device according to the third embodiment of the present disclosure. FIG. 25 is a partial perspective view showing the semiconductor device according to the fourth embodiment of the present disclosure. FIG. 26 is a cross-sectional view showing the semiconductor device according to the fourth embodiment of the present disclosure.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 18 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a support 1, one or more first semiconductor elements 10A, one or more second semiconductor elements 10B, a first conductive member 41, a second conductive member 40, a third conductive member 43, a plurality of first control terminals 46, a plurality of second control terminals 47, and a sealing resin 8.

[0013] FIG. 1 is a partial perspective view showing the semiconductor device A1. FIG. 2 is a partial perspective view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1. FIG. 4 is a partial plan view showing the semiconductor device A1. FIG. 5 is a partial side view showing the semiconductor device A1. FIG. 6 is a partial plan view showing the semiconductor device A1. FIG. 7 is a partial plan view showing the semiconductor device A1. FIG. 8 is a side view showing the semiconductor device A1. FIG. 9 is a bottom view showing the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 4. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4. FIG. 12 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 13 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 4. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 4. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 4. FIG. 17 is a partially enlarged cross-sectional view showing the semiconductor device A1. FIG. 18 is a circuit diagram showing the semiconductor device A1.

[0014] In these figures, for example, the thickness direction z is an example of a thickness direction, the first direction x is an example of a first direction, and the second direction y is an example of a second direction. Furthermore, for example, one side of the first direction x will be referred to as the first side x1, and the other side will be referred to as the second side x2. Furthermore, for example, one side of the second direction y will be referred to as the first side y1, and the other side will be referred to as the second side y2. Furthermore, for example, one side of the thickness direction z will be referred to as the first side z1, and the other side will be referred to as the second side z2.

[0015] The multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B are electronic components that are central to the functionality of the semiconductor device A1. The constituent material of each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is a semiconductor material primarily composed of, for example, silicon carbide (SiC). This semiconductor material is not limited to SiC and may be silicon (Si), gallium nitride (GaN), diamond (C), or the like. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, a power semiconductor chip with switching function, such as a metal oxide semiconductor field effect transistor (MOSFET). In this embodiment, the first semiconductor elements 10A and the second semiconductor elements 10B are MOSFETs, but are not limited thereto and may be other transistors such as insulated gate bipolar transistors (IGBTs). Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0016] 7, 12, and 13, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor elements 10A and the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the thickness direction z. The element main surface 101 faces a first side z1 in the thickness direction z, and the element back surface 102 faces a second side z2 in the thickness direction z.

[0017] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B. However, the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the examples shown in FIGS. 6 and 7 , four first semiconductor elements 10A and four second semiconductor elements 10B are arranged. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be two, three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal to or different from each other. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0018] 18, the semiconductor device A1 is configured as, for example, a half-bridge switching circuit. In this case, a plurality of first semiconductor elements 10A form an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B form a lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other, and in the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0019] As shown in FIGS. 6 and 7 , each of the multiple first semiconductor elements 10A is mounted on a first conductive portion 32A of a support substrate 3 of a support body 1 (described later). In the example shown in FIGS. 6 and 7 , the multiple first semiconductor elements 10A are aligned, for example, in the second direction y and spaced apart from one another. The multiple first semiconductor elements 10A may be spaced apart from one another in the second direction y but at different positions in the first direction x. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a first conductive bonding material 19A. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the element back surface 102 faces the first conductive portion 32A. Unlike the present embodiment, the multiple first semiconductor elements 10A may be mounted on a metal member other than a part of the DBC substrate or the like. In this case, the metal member corresponds to the first conductive portion in the present disclosure. This metal member may be supported by, for example, the first conductive portion 32A.

[0020] As shown in FIGS. 6 and 7 , each of the second semiconductor elements 10B is mounted on a second conductive portion 32B of the support substrate 3 (described later). In the example shown in FIGS. 6 and 7 , the second semiconductor elements 10B are aligned, for example, in the second direction y and spaced apart from one another. The second semiconductor elements 10B may be spaced apart from one another in the second direction y but positioned at different positions in the first direction x. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a second conductive bonding material 19B. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. As can be seen from FIG. 7 , the first semiconductor elements 10A and the second semiconductor elements 10B overlap when viewed in the first direction x, but they do not necessarily need to overlap. Unlike the present embodiment, the second semiconductor elements 10B may be mounted on a metal member that is different from a part of the DBC substrate or the like. In this case, the metal member corresponds to the second conductive portion in the present disclosure. This metal member may be supported by, for example, the second conductive portion 32B.

[0021] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a third electrode 11, a second electrode 12, a fourth electrode 13, and a first electrode 15. The configurations of the third electrode 11, the second electrode 12, the fourth electrode 13, and the first electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The third electrode 11, the second electrode 12, and the fourth electrode 13 are provided on the element main surface 101. The third electrode 11, the second electrode 12, and the fourth electrode 13 are insulated by an insulating film (not shown). The first electrode 15 is provided on the element rear surface 102.

[0022] The first electrode 15 is, for example, a drain electrode. The first electrode 15 is the positive electrode of the current path to be switched in the semiconductor device A1. The first electrode 15 covers substantially the entire back surface 102 of the element. The first electrode 15 is, for example, formed by Ag (silver) plating. The second electrode 12 is, for example, a source electrode. The second electrode 12 is the negative electrode of the current path to be switched in the semiconductor device A1. The third electrode 11 is, for example, a gate electrode. The third electrode 11 is an electrode for switching the conduction state between the first electrode 15 and the second electrode 12, and a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input to the third electrode 11. The fourth electrode 13 is an electrode at the same potential as the second electrode 12 and is, for example, a source sense electrode.

[0023] When a drive signal (gate voltage) is input to the third electrode 11, each first semiconductor element 10A (each second semiconductor element 10B) switches between a conductive state and a cut-off state in response to the drive signal. In the conductive state, current flows from the first electrode 15 to the second electrode 12, and in the cut-off state, this current does not flow. In other words, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts a DC voltage input between the two first conductive members 41 and the first member 42 into, for example, an AC voltage, using the switching function of the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B, and outputs the AC voltage from the third conductive member 43.

[0024] The support 1 includes a support substrate 3 and a control terminal support 48 .

[0025] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way, and may be, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a first metal layer 32, and a back surface metal layer 33. The first metal layer 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the thickness direction z is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0026] The insulating layer 31 is made of, for example, ceramics with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating layer 31 is not limited to ceramics and may be an insulating resin sheet or the like. The insulating layer 31 has, for example, a rectangular shape in a plan view. The dimension of the insulating layer 31 in the thickness direction z is, for example, 0.05 mm or more and 1.0 mm or less.

[0027] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the first side z1 in the thickness direction z). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the first direction x. The first conductive portion 32A is located on the first side x1 in the first direction x of the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B each have, for example, a rectangular shape in a plan view. The first conductive portion 32A and the second conductive portion 32B, together with the fourth conductive member 5 and the second conductive member 40, constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0028] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a flat surface facing a first side z1 in the thickness direction z. A plurality of first semiconductor elements 10A are bonded to the first main surface 301A of the first conductive portion 32A via a first conductive bonding material 19A. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a flat surface facing the first side z1 in the thickness direction z. A plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via a second conductive bonding material 19B. The constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited and may be, for example, solder, a metal paste material containing a metal such as Ag (silver), or a sintered metal containing a metal such as Ag (silver). The dimension of first conductive portion 32A and second conductive portion 32B in thickness direction z is, for example, not less than 0.1 mm and not more than 1.5 mm.

[0029] The back surface metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the second side z2 in the thickness direction z). The constituent material of the back surface metal layer 33 is the same as the constituent material of the first metal layer 32. The back surface metal layer 33 has a back surface 302. The back surface 302 is a flat surface facing the second side z2 in the thickness direction z. In the example shown in FIG. 9 , the back surface 302 is exposed from the sealing resin 8, for example. A heat dissipation member (for example, a heat sink) (not shown) can be attached to the back surface 302. The back surface 302 may not be exposed from the sealing resin 8 and may be covered by the sealing resin 8. The back surface metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view.

[0030] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.

[0031] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A. As shown in FIG. 12 , the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, and may be, for example, solder. The second support portion 48B is disposed on the second conductive portion 32B. As shown in FIG. 13 , the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49.

[0032] Each of the first support portion 48A and the second support portion 48B is formed of, for example, a direct bonded copper (DBC) substrate or an active metal brazing (AMB) substrate, and includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 stacked on top of each other.

[0033] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in plan view.

[0034] As shown in Figures 12 and 13, the first metal layer 482 is formed on the upper surface of the insulating layer 481. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. As shown in Figures 6 and 7, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, and the fifth portion 482E are spaced apart and insulated from one another.

[0035] A plurality of wires 71 are joined to the first portion 482A, and the first portion 482A is electrically connected to the third electrodes 11 of the first semiconductor elements 10A (the second semiconductor elements 10B) via the wires 71. Note that the wires 71, 72, and 74 are omitted from the drawings other than FIG.

[0036] A plurality of wires 72 are joined to the second portion 482B, and the second portion 482B is electrically connected to the fourth electrodes 13 of the first semiconductor elements 10A (second semiconductor elements 10B) via the wires 72.

[0037] The third portion 482C in this embodiment is an electrically insulated portion.

[0038] As shown in FIG. 6, a wire 74 is joined to the fifth portion 482E of the first support portion 48A, and is electrically connected to the first conductive portion 32A via the wire 74.

[0039] The wires 71, 72, and 74 are, for example, bonding wires. The material of each of the wires 71, 72, and 74 includes, for example, any one of Au (gold), Al (aluminum), and Cu (copper).

[0040] 12, 13, etc., the second metal layer 483 is formed on the lower surface of the insulating layer 481. As shown in Fig. 12, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. As shown in Fig. 13, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via a bonding material 49.

[0041] Each of the first conductive member 41, the second conductive member 40, and the third conductive member 43 is made of a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. The first conductive member 41 includes a first terminal 411. The first member 42 includes a second terminal 421. The third conductive member 43 includes a third terminal 431.

[0042] 18 , a DC voltage to be converted into power is input to the first terminal 411 and the second terminal 421. The first terminal 411 is a positive terminal (P terminal), and the second terminal 421 is a negative terminal (N terminal). An AC voltage converted into power by the first semiconductor element 10A and the second semiconductor element 10B is output from the third terminal 431.

[0043] As shown in FIGS. 1 to 7 , the two first conductive members 41 are spaced apart from each other in the second direction y. Each of the two first conductive members 41 is connected to the first main surface 301A of the first conductive portion 32A. As shown in FIGS. 6 and 7 , the two first conductive members 41 are located on a first side x1 in the first direction x with respect to the plurality of first semiconductor elements 10A. The two first conductive members 41 are electrically connected to the first conductive portion 32A and, via the first conductive portion 32A, to the first electrodes 15 of each of the first semiconductor elements 10A. In this embodiment, the first conductive member 41 has a first terminal portion 411, a first coupling portion 412, and a first step portion 413.

[0044] The first terminal portion 411 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The first connecting portion 412 is conductively joined to the first main surface 301A of the first conductive portion 32A, as shown in FIGS. 10 and 15 . The method of conductive joining is not limited, and methods such as ultrasonic joining, laser joining, welding, or methods using solder, metal paste, silver sintered body, etc. may be appropriately adopted. The first step portion 413 is interposed between the first terminal portion 411 and the first connecting portion 412, and causes the first terminal portion 411 and the first connecting portion 412 to be positioned differently in the thickness direction z.

[0045] The specific configuration of the second conductive member 40 is not limited in any way, and it may be composed of one member or multiple members. A single member refers to a configuration formed by, for example, cutting and bending a single metal plate material, and does not include a bonding material or the like for joining the members together. In this embodiment, the second conductive member 40 includes a first member 42 and a second member 6.

[0046] The first member 42 is electrically connected to the second electrodes 12 of the plurality of second semiconductor elements 10B via the second member 6. As shown in FIGS. 1 and 4 , the first member 42 is located between two first conductive members 41 in the second direction y. The first member 42 is also located on the first side x1 in the first direction x with respect to the plurality of first semiconductor elements 10A. In this embodiment, the first member 42 has a second terminal portion 421 and a second connecting portion 422.

[0047] The second terminal portion 421 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The second terminal portion 421 is located between the two first terminal portions 411 in the second direction y. The second terminal portion 421 is exposed from the sealing resin 8. The second linking portion 422 extends from the second terminal portion 421 to the second side x2 in the first direction x. In the illustrated example, the size of the second linking portion 422 in the second direction y is smaller than the size of the second terminal portion 421 in the second direction y.

[0048] The first member 42 further has one or more connection portions 425. The connection portions 425 are supported by the support member 1 as shown in FIGS. 1 , 4 , 16 , and 17 . This allows the second conductive member 40 to be supported by the support member 1. In this embodiment, the connection portions 425 are supported by the first support portion 48A and the third portion 482C of the first metal layer 482. The method for supporting the connection portions 425 is not limited in any way, and various methods may be employed, such as a method using a bonding material or a method such as welding without using a bonding material. In the illustrated example, the connection portions 425 are joined to the third portion 482C by a conductive bonding material 429.

[0049] The number of the one or more connecting portions 425 is not limited in any way and may be one or more. In the example shown, the first member 42 has two connecting portions 425. The two connecting portions 425 extend from the second coupling portion 422 to both sides in the second direction y. The connecting portion 425 is supported by the third portion 482C on the second side z2 in the thickness direction z from the second coupling portion 422.

[0050] The connection portion 425 may have a through hole 4251. The through hole 4251 penetrates the connection portion 425 in the thickness direction z. The through hole 4251 can be filled with, for example, a conductive bonding material 429.

[0051] The second member 6 is located on a first side z1 in the thickness direction z from the first main surface 301A and the second main surface 301B, and overlaps the first main surface 301A and the second main surface 301B in a plan view. In this embodiment, the second member 6 is made of a metal plate. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the second member 6 is a metal plate that has been appropriately bent.

[0052] The second member 6 is electrically connected to the second electrodes 12 of the plurality of second semiconductor elements 10B and the first members 42, thereby establishing electrical continuity between them.

[0053] In this embodiment, the second member 6 has a plurality of sixth connecting portions 61, seventh connecting portions 62, a main portion 63, and step portions 64, as shown in FIGS.

[0054] The sixth linking portions 61 are portions that are individually bonded to the second semiconductor elements 10B. Each sixth linking portion 61 and the second electrode 12 of each second semiconductor element 10B are bonded via a conductive bonding material 69. The material of the conductive bonding material 69 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the sixth linking portion 61 has two flat portions 611 and two first inclined portions 612.

[0055] The two flat portions 611 are aligned in the second direction y. The two flat portions 611 are spaced apart from each other in the second direction y. The shape of the flat portions 611 is not limited in any way, and in the illustrated example, they are rectangular. The two flat portions are joined to the second electrode 12 on both sides in the second direction y, sandwiching a gate finger (not shown) of the second electrode 12 of the second semiconductor element 10B therebetween.

[0056] The two first inclined portions 612 are connected to the first side y1 or the second side y2 in the second direction y of the flat portion 611. The first inclined portions 612 are inclined so that the farther they are from the flat portion 611 in the second direction y, the closer they are to the first side z1 in the thickness direction z.

[0057] The seventh connecting portion 62 is conductively joined to the first member 42. In the illustrated example, the seventh connecting portion 62 is conductively joined to the second connecting portion 422. The method of conductive joining is not limited in any way, and methods such as ultrasonic joining, laser joining, welding, or methods using solder, metal paste, sintered silver, etc. may be used as appropriate. In the illustrated example, the seventh connecting portion 62 is joined to the second connecting portion 422 via a conductive joining material 69.

[0058] The main portion 63 is interposed between the sixth connecting portions 61 and the seventh connecting portions 62. The main portion 63 is a flat portion perpendicular to the thickness direction z. The size of the main portion 63 in the second direction y is larger than the size of the sixth connecting portion 61 and the size of the main portion 63 in the second direction y.

[0059] The step portion 64 is interposed between the seventh connecting portion 62 and the main portion 63. By providing the step portion 64, the seventh connecting portion 62 and the main portion 63 are at different positions in the thickness direction z.

[0060] As can be seen from FIGS. 6 , 7 , and 14 , the third conductive member 43 is conductively joined to the second conductive portion 32B. The conductive joining method is not limited to any particular method, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, or sintered silver may be appropriately employed. As shown in FIG. 6 and other figures, the third conductive member 43 is located on the second side x2 in the first direction x with respect to the plurality of second semiconductor elements 10B. The third conductive member 43 is conductive to the second conductive portion 32B and, via the second conductive portion 32B, is conductive to the first electrodes 15 of the plurality of second semiconductor elements 10B. The number of third conductive members 43 is not limited to one and may be, for example, two or more.

[0061] In the present embodiment, the third conductive member 43 has a third terminal 431 and a third linking portion 432. The third terminal 431 is exposed from the sealing resin 8 and is a portion used when electrically connecting the semiconductor device A1 to an external device. The third linking portion 432 extends from the third terminal 431 toward the first side x1 in the first direction x. The third linking portion 432 is conductively joined to the second main surface 301B of the second conductive portion 32B.

[0062] The plurality of control terminals 45 are pin-shaped terminals for controlling the first semiconductor elements 10A and the second semiconductor elements 10B. The plurality of control terminals 45 include a plurality of first control terminals 46A, 46B, 46E and a plurality of second control terminals 47A, 47B, 47E. The plurality of first control terminals 46A, 46B, 46E are used to control the first semiconductor elements 10A, etc. The plurality of second control terminals 47A, 47B, 47E are used to control the second semiconductor elements 10B, etc.

[0063] The first control terminals 46A, 46B, and 46E are spaced apart from one another in the second direction y. In the illustrated example, the first control terminals 46A, 46B, and 46E are arranged substantially in a straight line along the second direction y, but this is not limiting. For example, the first control terminals 46A, 46B, and 46E may be arranged at different positions in the first direction. As shown in FIGS. 6 , 11 , and 16 , the first control terminals 46A, 46B, and 46E protrude from the sealing resin 8 to the first side z1 in the thickness direction z. The first control terminals 46A, 46B, and 46E are supported by the first conductive portion 32A via a control terminal support 48 (first support portion 48A). As shown in FIGS. 4 and 6 , the first control terminals 46A, 46B, and 46E are located between the first semiconductor elements 10A and the first terminal portion 411 and the second terminal portion 421 in the first direction x.

[0064] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied). The first control terminal 46A is mounted on the first portion 482A of the first support portion 48A.

[0065] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first semiconductor elements 10A. The first control terminal 46B detects the voltage (voltage corresponding to the source current) applied to each second electrode 12 of the multiple first semiconductor elements 10A. The first control terminal 46B is mounted on the second portion 482B of the first support portion 48A.

[0066] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the plurality of first semiconductor elements 10A. The first control terminal 46E detects the voltage (voltage corresponding to the drain current) applied to the first electrodes 15 of the plurality of first semiconductor elements 10A. The first control terminal 46E is mounted on the fifth portion 482E of the first support portion 48A.

[0067] 1, 4, and 16, the second conductive member 40 has a portion located between the two first control terminals 46 in the second direction y. In the illustrated example, the second coupling portion 422 is located between the first control terminal 46A and the first control terminal 46E. Also, in the illustrated example, the connection portion 425 is located between the two first control terminals 46 in the second direction y.

[0068] The configuration in which the second conductive member 40 has a portion located between the two first control terminals 46 in the second direction y is not limited in any way, and for example, a part of the second member 6, such as the seventh connecting portion 62, may be located between the two first control terminals 46.

[0069] The second control terminals 47A, 47B, and 47E are spaced apart from one another in the second direction y. In the illustrated example, the second control terminals 47A, 47B, and 47E are arranged substantially in a straight line in the second direction y, but this is not limiting. For example, the second control terminals 47A, 47B, and 47E may be arranged at different positions in the first direction. As shown in FIGS. 6 and 11 , the second control terminals 47A, 47B, and 47E are supported by the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described below). As shown in FIGS. 4 and 6 , the second control terminals 47A, 47B, and 47E are located between the second semiconductor elements 10B and the third terminal portion 431 in the first direction x.

[0070] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal for the plurality of second semiconductor elements 10B. A drive signal for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47A is mounted on the first portion 482A of the second support portion 48B.

[0071] The second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the multiple second semiconductor elements 10B. The second control terminal 47B detects the voltage (voltage corresponding to the source current) applied to each second electrode 12 of the multiple second semiconductor elements 10B. The second control terminal 47B is mounted on the second portion 482B of the second support portion 48B.

[0072] In this embodiment, the second control terminal 47E is a dummy terminal, and is mounted on the fifth portion 482E of the second support portion 48B.

[0073] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A, 46B, and 46E and the plurality of second control terminals 47A, 47B, and 47E) includes a holder 451 and a metal pin 452. Alternatively, the plurality of control terminals 45 may be formed from a single metal member.

[0074] The holder 451 is made of a conductive material. As shown in FIGS. 12 and 13 , the holder 451 is bonded to the control terminal support body 48 (first metal layer 482) via a conductive bonding material 459. The holder 451 includes a cylindrical portion, an upper flange, and a lower flange. The upper flange is connected to the upper part of the cylindrical portion, and the lower flange is connected to the lower part of the cylindrical portion. A metal pin 452 is inserted through at least the upper flange and the cylindrical portion of the holder 451. The holder 451 is covered with sealing resin 8 (second protrusion 852 described below).

[0075] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by, for example, being press-fitted into a holder 451. The metal pin 452 is electrically connected to the control terminal support body 48 (a first metal layer 482 described below) at least via the holder 451.

[0076] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.

[0077] The fourth conductive member 5, together with the first conductive portion 32A and the second conductive portion 32B, constitutes a path for a main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The fourth conductive member 5 is located on a first side z1 in the thickness direction z from the first main surface 301A and the second main surface 301B, and overlaps the first main surface 301A and the second main surface 301B in a plan view. In this embodiment, the fourth conductive member 5 is made of a metal plate. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the fourth conductive member 5 is a metal plate that has been appropriately bent.

[0078] 2 and 6 , the fourth conductive member 5 is connected to the second electrodes 12 of the plurality of first semiconductor elements 10A and the second conductive portion 32B, and electrically connects the second electrodes 12 of the plurality of first semiconductor elements 10A and the second conductive portion 32B. The fourth conductive member 5 forms a path for a main circuit current switched by the plurality of first semiconductor elements 10A. As shown in FIGS. 2 and 6 , the fourth conductive member 5 includes a main portion 53, a plurality of fourth connecting portions 51, and a plurality of fifth connecting portions 52.

[0079] The main portion 53 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x and is a strip-shaped portion extending in the second direction y in a plan view. The main portion 53 is spaced from the first main surface 301A and the second main surface 301B in the thickness direction z to a first side z1 in the thickness direction z. As shown in FIG. 14 and other figures, the main portion 53 is located on a second side z2 in the thickness direction z with respect to a main portion 63 of the second member 6, which will be described later.

[0080] In the present embodiment, the main portion 53 is disposed parallel to the first main surface 301A and the second main surface 301B. Furthermore, a plurality of first openings 514 are formed in the main portion 53. Portions of the insulating layer 31 located between the first conductive portion 32A and the second conductive portion 32B are exposed through the plurality of first openings 514. The plurality of first openings 514 are formed to facilitate the flow of a fluid resin material between an upper side (first side z1 in the thickness direction z) and a lower side (second side z2 in the thickness direction z) near the main portion 53 (fourth conductive member 5) when the fluid resin material is injected to form the sealing resin 8.

[0081] As shown in FIG. 6 and other figures, the plurality of fourth connecting portions 51 and the plurality of fifth connecting portions 52 are each connected to the main portion 53. The plurality of fourth connecting portions 51 are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each fourth connecting portion 51 is located on a first side x1 in the first direction x with respect to the main portion 53. Each fifth connecting portion 52 is located on a second side x2 in the first direction x with respect to the main portion 53. As shown in FIG. 12, each fourth connecting portion 51 and the corresponding second electrode 12 of the first semiconductor element 10A are bonded via a conductive bonding material 59. Each fifth connecting portion 52 and the second conductive portion 32B are bonded via the conductive bonding material 59. The material of the conductive bonding material 59 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the fourth connecting portion 51 has two portions spaced apart in the second direction y. These two portions are joined to the second electrode 12 on both sides in the second direction y, with a gate finger (not shown) of the second electrode 12 of the first semiconductor element 10A sandwiched therebetween.

[0082] The sealing resin 8 covers the multiple first semiconductor elements 10A, the multiple second semiconductor elements 10B, the support 1 (excluding the back surface 302), the first member 42, the third conductive member 43, a portion of each of the two first conductive members 41, a portion of each of the multiple control terminals 45, the fourth conductive member 5, the second member 6, and the multiple wires 71, 72, and 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed, for example, by molding. The sealing resin 8 has, for example, a dimension in the first direction x of approximately 35 mm to 60 mm, a dimension in the second direction y of approximately 35 mm to 50 mm, and a dimension in the thickness direction z of approximately 4 mm to 15 mm. These dimensions are the sizes of the largest portions along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834.

[0083] As shown in FIGS. 8 and 10 , the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces a first side z1 in the thickness direction z, and the resin back surface 82 faces a second side z2 in the thickness direction z. A plurality of control terminals 45 (a plurality of first control terminals 46A, 46B, 46C, and 46E and a plurality of second control terminals 47A, 47B, and 47E) protrude from the resin main surface 81. As shown in FIG. 9 , the resin back surface 82 has a frame shape surrounding a back surface 302 (the lower surface of the back surface metal layer 33) of the support substrate 3 in a plan view. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82 and is, for example, flush with the resin back surface 82.

[0084] Each of the multiple resin side surfaces 831 to 834 is connected to both the resin main surface 81 and the resin back surface 82 and is sandwiched between them in the thickness direction z. As shown in FIG. 3 and other figures, the resin side surface 831 and the resin side surface 832 are spaced apart in the first direction x. The resin side surface 831 faces a second side x2 in the first direction x, and the resin side surface 832 faces a first side x1 in the first direction x. Two third conductive members 43 protrude from the resin side surface 831, and the first member 42, the first member 42, and the first conductive member 41 protrude from the resin side surface 832. As shown in FIG. 3 and other figures, the resin side surface 833 and the resin side surface 834 are spaced apart in the second direction y. The resin side surface 833 faces a second side y2 in the second direction y, and the resin side surface 834 faces a first side y1 in the second direction y.

[0085] 3, a plurality of recesses 832a are formed in the resin side surface 832. Each recess 832a is a portion recessed in the first direction x in a plan view. The plurality of recesses 832a are formed between the first member 42 and the first conductive member 41 in a plan view. The plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first member 42 and the first conductive member 41.

[0086] 3, 9 to 11, 14, and 15, a plurality of recesses 832b are formed in the resin side surface 832. The plurality of recesses 832b are recessed from the resin side surface 832 toward the second side x2 in the first direction x. The first terminal portions 411 of the two first conductive members 41 and the second terminal portion 421 of the first member 42 are exposed from the plurality of recesses 832b. Note that the resin side surface 832 may not be formed with the plurality of recesses 832b, and the first terminal portions 411 and the second coupling portion 422 may protrude from the resin side surface 832 toward the first side x1 in the first direction x, for example.

[0087] As shown in FIGS. 11 and 16 , the sealing resin 8 has a plurality of second protrusions 852. The second protrusions 852 protrude from the resin main surface 81 in the thickness direction z. The second protrusions 852 overlap the control terminals 45 in a plan view. Each metal pin 452 of the control terminals 45 protrudes from the corresponding second protrusion 852. Each second protrusion 852 has a truncated cone shape. The second protrusion 852 covers the holder 451 and a portion of the metal pin 452 of each control terminal 45.

[0088] Next, a vehicle B1 equipped with the semiconductor device A1 will be described with reference to Fig. 19. The vehicle B1 is, for example, an electric vehicle (EV).

[0089] As shown in Fig. 19, vehicle B1 includes an on-board charger 91, a storage battery 92, and a drive system 93. Power is supplied to the on-board charger 91 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 91 via a wired connection. The on-board charger 91 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600 V.

[0090] The drive system 93 drives the vehicle B1. The drive system 93 has an inverter 931 and a drive source 932. The semiconductor device A1 constitutes part of the inverter 931. Power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. In addition, unlike the power system shown in FIG. 19 , a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 including the semiconductor device A1 is electrically connected to the drive source 932.

[0091] The drive source 932 includes an AC motor and a transmission. When AC power converted by the inverter 931 is supplied to the drive source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B1. This drives the vehicle B1. To drive the vehicle B1, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. The semiconductor device A1 in the inverter 931 is required to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0092] Next, the operation of this embodiment will be described.

[0093] The second conductive member 40 is supported by the support 1. This allows the second conductive member 40 to be supported more stably, for example, during the manufacturing process of the semiconductor device A1. Therefore, the second terminal portion 421 can be more appropriately positioned. By being able to support the second conductive member 40 more stably, it is possible to employ a second conductive member 40 with a larger cross-sectional area. This allows the resistance of the second conductive member 40 to be reduced. Furthermore, heat dissipation via the second conductive member 40 can be promoted.

[0094] The connection portion 425 of the first member 42 is supported by the support body 1. This makes it possible to more reliably support the connection portion 425.

[0095] 1, 4, and 16, the second conductive member 40 is disposed between the plurality of first control terminals 46 in the second direction y. This makes it possible to more appropriately dispose the second conductive member 40 and the plurality of first control terminals 46 while avoiding interference between the second conductive member 40 and the plurality of first control terminals 46.

[0096] The connection portion 425 is supported by the first support portion 48 A. This eliminates the need to prepare a dedicated member for supporting the connection portion 425, and makes it possible to avoid an increase in the number of parts.

[0097] The two connection portions 425 protrude from the second coupling portion 422 on both sides in the second direction y, thereby more firmly supporting the second conductive member 40. The through-holes 4251 provided in the connection portions 425 can increase the bonding strength of the conductive bonding material 429.

[0098] The second member 6 and the first member 42 are configured as separate components, which makes it possible to prevent the individual components that configure the second conductive member 40 from becoming excessively large.

[0099] 4 , the size of the second connecting portion 422 in the second direction y is smaller than the size of the second terminal portion 421 in the second direction y. The second connecting portion 422 is located between the first control terminal 46A and the first control terminal 46C in the second direction y. This makes it possible to prevent interference between the first member 42 and the multiple first control terminals 46.

[0100] The size of the seventh connecting portion 62 in the second direction y is smaller than the size of the main portion 63 in the second direction y. This allows the multiple sixth connecting portions 61 to be connected to the main portion 63, while also allowing the second connecting portion 422 and the seventh connecting portion 62 to be appropriately connected.

[0101] The sixth connecting portion 61 has two flat portions 611 and two first inclined portions 612. The two first inclined portions 612 are connected to both sides of the two flat portions 611 in the second direction y. This makes it possible to prevent the current flowing through the second electrode 12 from concentrating in one place.

[0102] The two flat portions 611 are spaced apart in the second direction y. This allows current to flow reliably through both the two flat portions 611 and the two first inclined portions 612, which is preferable for suppressing current concentration.

[0103] By separating the two flat portions 611 from each other, a gate finger (not shown) of the second electrode 12 can be disposed between them.

[0104] 20 to 26 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the parts in each embodiment can be appropriately combined with each other as long as no technical contradictions arise.

[0105] 20 shows a first modified example of the semiconductor device A1. In the semiconductor device A11 of this modified example, the thickness of the connection portion 425 in the thickness direction z is greater than the thickness of the second linking portion 422 in the thickness direction z. The connection portion 425 protrudes from the second linking portion 422 to the second side z2 in the thickness direction z.

[0106] This modification allows for more appropriate placement of the second terminal portion 421. The connection portion 425 may have the same thickness as (or approximately the same thickness as) the second coupling portion 422, or may have a different thickness from the second coupling portion 422.

[0107] 21 shows a second modified example of the semiconductor device A1. In the semiconductor device A12 of this modified example, the connection portion 425 is formed of a separate member from the second coupling portion 422. The connection portion 425 includes a metal such as Cu (copper). The connection portion 425 is joined to the second coupling portion 422 via, for example, a conductive bonding material 429.

[0108] This modification allows for more appropriate placement of the second terminal portion 421. The connection portion 425 may be formed integrally with the second coupling portion 422, or may be formed of a separate member from the second coupling portion 422.

[0109] 22 shows a third modified example of the semiconductor device A1. In the semiconductor device A13 of this modified example, the connection portion 425 is formed of a separate member from the second coupling portion 422. The connection portion 425 is made of, for example, an insulating material. The connection portion 425 is joined to the second coupling portion 422 via, for example, a bonding material 428.

[0110] This modification allows for more appropriate positioning of the second terminal portion 421. The connecting portion 425 may be formed integrally with the second coupling portion 422, or may be formed of a separate member from the second coupling portion 422. By making the connecting portion 425 from an insulating material, it is possible to join the connecting portion 425 to, for example, any of the first portion 482A, the second portion 482B, and the fifth portion 482E.

[0111] 23 shows a semiconductor device according to a second embodiment of the present disclosure. In the semiconductor device A2 of this embodiment, the first member 42 has one connection portion 425.

[0112] The connection portion 425 protrudes from the second coupling portion 422 to the first side y1 in the second direction y.

[0113] This embodiment allows for more appropriate placement of the second terminal portion 421. Having one connection portion 425 in the first member 42 has the advantage of making it easier to place the other first control terminal 46, for example, on the second side in the second direction y with respect to the second coupling portion 422.

[0114] 24 shows a semiconductor device according to a third embodiment of the present disclosure. In a semiconductor device A3 of this embodiment, the second member 6 has a plurality of seventh connecting portions 62.

[0115] One seventh connecting portion 62 is connected to the second connecting portion 422 from the second side x2 in the first direction x. The other two seventh connecting portions 62 are connected to the second connecting portion 422 from both sides in the second direction y.

[0116] This embodiment allows for more appropriate placement of the second terminal portion 421. Since the multiple seventh connecting portions 62 are connected to the first member 42, the connection strength between the first member 42 and the second member 6 can be improved.

[0117] 25 and 26 show a semiconductor device according to a fourth embodiment of the present disclosure. In a semiconductor device A4 of this embodiment, a second conductive member 40 is supported by a support substrate 3.

[0118] The first conductive portion 32A includes a first region 321A and a second region 322A. A plurality of first semiconductor elements 10A and a first support portion 48A are mounted in the first region 321A. The second region 322A is separated from the first region 321A and is insulated from the first region 321A. In the illustrated example, the first region 321A has a shape that surrounds the second region 322A on three sides: a first side x1 in the first direction x and both sides in the second direction y.

[0119] The connecting portion 425 is supported by the second region 322A. The method for joining the connecting portion 425 to the second region 322A is not limited in any way. In the illustrated example, laser welding, for example, may be used. In the illustrated example, the second coupling portion 422 and the connecting portion 425 are configured by the same part.

[0120] This embodiment makes it possible to more appropriately position the second terminal portion 421. Since the second conductive member 40 is supported by the support substrate 3, heat from, for example, the second semiconductor element 10B can be more smoothly conducted to the support substrate 3.

[0121] The semiconductor device and vehicle according to the present disclosure are not limited to the above-described embodiments. The specific configurations of the components of the semiconductor device and vehicle according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices.

[0122] Supplementary Note 1. A support (1); a first semiconductor element (10A) having a first electrode (15) that is a positive electrode of a current path to be switched, a second electrode (12) that is a negative electrode, and a third electrode (11) for switching the conduction state of the first electrode (15) and the second electrode (12); a second semiconductor element (10B) having a first electrode (15) that is a positive electrode of a current path to be switched, a second electrode (12) that is a negative electrode, and a third electrode (11) for switching the conduction state of the first electrode (15) and the second electrode (12); a first conductive member (41) including a first terminal portion (411); a second conductive member (40) including a second terminal portion (421); a third conductive member (43) including a third terminal portion (431); and a plurality of first control terminals (46), any of which is conductive to the third electrode (11) of the first semiconductor element (10A). the semiconductor device comprises: a plurality of second control terminals (47), any of which is electrically connected to the third electrode (11) of the second semiconductor element (10B); and a sealing resin (8), wherein the first conductive member (41) is electrically connected to the first electrode (15) of the first semiconductor element (10A); the second conductive member (40) is electrically connected to the second electrode (12) of the second semiconductor element (10B); the third conductive member (43) is electrically connected to the second electrode (12) of the first semiconductor element (10A) and the first electrode (15) of the second semiconductor element (10B); the plurality of first control terminals (46) and the plurality of second control terminals (47) protrude from the sealing resin (8) on a first side (z1) in the thickness direction (z); The semiconductor device (A1) according to Appendix 1, wherein the first terminal portion (411) and the second terminal portion (421) are exposed from the sealing resin (8) on a first side (x1) in a first direction (x) perpendicular to the thickness direction (z), the third terminal portion (431) is exposed from the sealing resin (8) on a second side (x2) in the first direction (x), and the second conductive member (40) is supported by the support body (1). Appendix 2. The semiconductor device (A1) according to Appendix 1, wherein the support body (1) includes a first support portion (48A) that supports the plurality of first control terminals (46) and a support substrate (3) that supports the first semiconductor element (10A), and the second conductive member (40) overlaps with the first support portion (48A) when viewed in the thickness direction (z).Supplementary Note 3. The semiconductor device (A1) according to Supplementary Note 2, wherein the first support portion (48A) is located between the first semiconductor element (10A) and the second terminal portion (421) in the first direction (x). Supplementary Note 4. The semiconductor device (A1) according to Supplementary Note 2 or 3, wherein the plurality of first control terminals (46) are aligned along a second direction (y) perpendicular to the thickness direction (z) and the first direction (x), and the second conductive member (40) has a portion located between two of the first control terminals (46) in the second direction (y). Supplementary Note 5. The semiconductor device (A1) according to any one of Supplements 2 to 4, wherein the second conductive member (40) is supported by the first support portion (48A). Supplementary Note 6. The semiconductor device (A1) according to Appendix 5, wherein the first support portion (48A) includes an insulating layer (481), a first metal layer (482) located on the opposite side of the insulating layer (481) from the support substrate (3), and a second metal layer (483) interposed between the insulating layer (481) and the support substrate (3), and the second conductive member (40) is supported by the first metal layer (482). Appendix 7. The semiconductor device (A1) according to Appendix 6, wherein the first metal layer (482) includes a first portion (482A) conducting to the third electrode (11) of the first semiconductor element (10A) and a third portion (482C) insulated from the first portion (482A), and the second conductive member (40) is supported by the third portion (482C). Appendix 8. The semiconductor device (A1) according to any one of Supplementary Notes 5 to 7, wherein the second conductive member (40) includes a first member (42) including the second terminal portion (421) and a second member (6) conductively joined to the second electrode (12) of the second semiconductor element (10B). Supplementary Note 9: The semiconductor device (A1) according to Supplementary Note 8, wherein the first member (42) is supported by the first support portion (48A). Supplementary Note 10: The semiconductor device (A1) according to Supplementary Note 9, wherein the first member (42) includes a second coupling portion (422) coupled to the second member (6) and a connection portion (425) connected to the first support portion (48A). Supplementary Note 11: The semiconductor device (A1) according to Supplementary Note 10, wherein the connection portion (425) is located on a second side (z2) in the thickness direction (z) of the second coupling portion (422).Supplementary Note 12. The semiconductor device (A1) according to Supplementary Note 11, wherein the connection portion (425) protrudes from the second coupling portion (422) in a second direction (y) perpendicular to the thickness direction (z) and the first direction (x). Supplementary Note 13. The semiconductor device (A1) according to Supplementary Note 11, wherein the connection portion (425) is thicker in the thickness direction (z) than the second coupling portion (422). Supplementary Note 14. The semiconductor device (A1) according to Supplementary Note 11, wherein the connection portion (425) is formed of a separate member joined to the second coupling portion (422). Supplementary Note 15. The semiconductor device (A4) according to any one of Supplements 2 to 4, wherein the second conductive member (40) is supported by the support substrate (3). Supplementary Note 16. The semiconductor device (A4) according to Appendix 15, wherein the support substrate (3) has an insulating layer (31) and a first metal layer (32) located on the first side (z1) in the thickness direction (z) of the insulating layer (31), the first metal layer (32) includes a first conductive portion (32A) and a second conductive portion (32B), the second semiconductor element (10B) is mounted on the second conductive portion (32B), the first conductive portion (32A) includes a first region (321A) and a second region (322A) insulated from each other, the first semiconductor element (10A) is mounted on the first region (321A), and the second conductive member (40) is supported by the second region (322A). Appendix 17. A vehicle comprising: a drive source; and the semiconductor device according to any one of Appendixes 1 to 16, wherein the semiconductor device is electrically connected to the drive source.

[0123] A1, A11, A12, A13, A2, A3, A4: semiconductor device 1: support 3: support substrate 5: fourth conductive member 6: second member 8: sealing resin 10A: first semiconductor element 10B: second semiconductor element 11: third electrode 12: second electrode 13: fourth electrode 15: first electrode 19A: first conductive bonding material 19B: second conductive bonding material 31: insulating layer 32: first metal layer 32A: first conductive portion 32B: second conductive portion 33: back surface metal layer 40: second conductive member 41: first conductive member 42: first member 43: third conductive member 45: control terminal 46, 46A, 46B, 46C, 46E: first control terminal 47, 47A, 47B, 47E: second control terminal 48: Control terminal support 48A: First support portion 48B: Second support portion 49: Bonding material 51: Fourth connecting portion 52: Fifth connecting portion 53: Main portion 59: Conductive bonding material 61: Sixth connecting portion 62: Seventh connecting portion 63: Main portion 64: Step portion 69: Conductive bonding material 71: Wire 72: Wire 74: Wire 81: Resin main surface 82: Resin back surface 91: On-board charger 92: Storage battery 93: Drive system 101: Element main surface 102: Element back surface 301A: First main surface 301B: Second main surface 302: Back surface 321A: First region 322A: Second region 411: First terminal portion 412: First connecting portion 413: First step portion 421: Second terminal portion 422: Second connecting portion 425: Connection portion 428: Bonding material 429: Conductive bonding material 431: Third terminal portion 432: Third connecting portion 451: Holder 452: Metal pin 459: Conductive bonding material 481: Insulating layer 482: First metal layer 482A: First portion 482B: Second portion 482C: Third portion 482E: Fifth portion 483: Second metal layer 514: First opening 611: Flat portion 612: First inclined portion 831, 832: Resin side surface 832a: Recess 832b: Recess 833, 834: Resin side surface 852: Second protrusion 931: Inverter 932: Driving source 4251: Through hole B1: Vehicle x: First direction x1: First side x2: Second side y: Second direction y1: First side y2: Second side z: Thickness direction z1: First side z2: Second side

Claims

1. A semiconductor device comprising: a support; a first semiconductor element having a first electrode which is a positive electrode of a current path to be switched, a second electrode which is a negative electrode, and a third electrode for switching the conduction state of the first electrode and the second electrode; a second semiconductor element having the first electrode which is a positive electrode of a current path to be switched, a second electrode which is a negative electrode, and a third electrode for switching the conduction state of the first electrode and the second electrode; a first conductive member including a first terminal portion; a second conductive member including a second terminal portion; a third conductive member including a third terminal portion; a plurality of first control terminals, any of which is conductive to the third electrode of the first semiconductor element; a plurality of second control terminals, any of which is conductive to the third electrode of the second semiconductor element; and a sealing resin, wherein the first conductive member is conductive to the first electrode of the first semiconductor element, and the second conductive member is conductive to the second electrode of the second semiconductor element, the third conductive member is electrically connected to the second electrode of the first semiconductor element and the first electrode of the second semiconductor element; the plurality of first control terminals and the plurality of second control terminals protrude from the sealing resin to a first side in a thickness direction; the first terminal portion and the second terminal portion are exposed from the sealing resin on a first side in a first direction perpendicular to the thickness direction; the third terminal portion is exposed from the sealing resin on a second side in the first direction; and the second conductive member is supported by the support body.

2. The semiconductor device according to claim 1, wherein the support includes a first support portion that supports the plurality of first control terminals and a support substrate that supports the first semiconductor element, and the second conductive member overlaps with the first support portion when viewed in the thickness direction.

3. The semiconductor device according to claim 2, wherein the first support portion is located between the first semiconductor element and the second terminal portion in the first direction.

4. A semiconductor device as described in claim 2 or 3, wherein the plurality of first control terminals are aligned along the thickness direction and a second direction perpendicular to the first direction, and the second conductive member has a portion located between two of the first control terminals in the second direction.

5. The semiconductor device according to any one of claims 2 to 4, wherein the second conductive member is supported by the first support portion.

6. The semiconductor device according to claim 5, wherein the first support portion includes an insulating layer, a first metal layer located on the opposite side of the insulating layer from the support substrate, and a second metal layer interposed between the insulating layer and the support substrate, and the second conductive member is supported by the first metal layer.

7. The semiconductor device according to claim 6, wherein the first metal layer includes a first portion that is conductive to the third electrode of the first semiconductor element and a third portion that is insulated from the first portion, and the second conductive member is supported by the third portion.

8. A semiconductor device according to any one of claims 5 to 7, wherein the second conductive member includes a first member including the second terminal portion and a second member conductively joined to the second electrode of the second semiconductor element.

9. The semiconductor device according to claim 8, wherein the first member is supported by the first support portion.

10. The semiconductor device according to claim 9, wherein the first member includes a second coupling portion coupled to the second member and a connection portion connected to the first support portion.

11. The semiconductor device according to claim 10, wherein the connection portion is located on the second side in the thickness direction relative to the second coupling portion.

12. The semiconductor device according to claim 11, wherein the connection portion protrudes from the second coupling portion in a second direction perpendicular to the thickness direction and the first direction.

13. The semiconductor device according to claim 11, wherein the connecting portion is thicker in the thickness direction than the second coupling portion.

14. The semiconductor device according to claim 11, wherein the connection portion is formed of a separate member joined to the second coupling portion.

15. The semiconductor device according to any one of claims 2 to 4, wherein the second conductive member is supported by the support substrate.

16. The semiconductor device described in claim 15, wherein the support substrate has an insulating layer and a first metal layer located on the first side of the insulating layer in the thickness direction, the first metal layer includes a first conductive portion and a second conductive portion, the second semiconductor element is mounted on the second conductive portion, the first conductive portion includes a first region and a second region insulated from each other, the first semiconductor element is mounted on the first region, and the second conductive member is supported by the second region.

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