Semiconductor device

Abstract

This semiconductor device comprises a first lead, a second lead, a first semiconductor element, a second semiconductor element, and sealing resin. The first lead includes a first island portion, a first extension portion, and a second extension portion. The second lead is spaced apart from the first lead in a first direction. The second lead includes a second island portion, a third extension portion, and a fourth extension portion. The width of the first island portion in the first direction may be smaller than the width of the second island portion in the first direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes an island lead, a plurality of peripheral leads, a semiconductor element, a plurality of wires, and a sealing resin. The semiconductor element is mounted on the island lead. The semiconductor element is connected to the plurality of peripheral leads by a plurality of wires.

[0003] Japanese Patent Application Laid-Open No. 2019-121698

[0004] [Summary] One of the requirements for semiconductor devices is that they include a plurality of semiconductor elements.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can appropriately include multiple semiconductor elements.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first lead located on a first side in a first direction, a second lead located away from the first lead on a second side in the first direction, a first semiconductor element, a second semiconductor element, and a sealing resin covering the first semiconductor element and the second semiconductor element. The sealing resin includes a first resin surface facing the first side in the first direction (x), a second resin surface facing the second side in the first direction, a third resin surface facing the first side in a second direction perpendicular to the first direction, and a fourth resin surface facing the second side in the second direction, as well as a first corner portion sandwiched between the first resin surface and the third resin surface, a second corner portion sandwiched between the first resin surface and the fourth resin surface, a third corner portion sandwiched between the second resin surface and the third resin surface, and a fourth corner portion sandwiched between the second resin surface and the fourth resin surface. The first lead includes a first island portion, a first extending portion, and a second extending portion. The second lead includes a second island portion, a third extending portion, and a fourth extending portion. The first semiconductor element is mounted on the first island portion, and the second semiconductor element is mounted on the second island portion. The first extending portion is exposed from the sealing resin at the first corner portion, the second extending portion is exposed from the sealing resin at the second corner portion, the third extending portion is exposed from the sealing resin at the third corner portion, and the fourth extending portion is exposed from the sealing resin at the fourth corner portion.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 2. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 2. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 2. FIG. 12 is a partially enlarged plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 13 is a partially enlarged plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 14 is a partially enlarged plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 15 is a partially enlarged plan view showing a semiconductor device according to the second embodiment of the present disclosure.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 12 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first lead 1, a second lead 2, a first semiconductor element 8A, a second semiconductor element 8B, and a sealing resin 9. The semiconductor device A1 may also include a third lead 3, one or more fourth leads 4, a fifth lead 5, one or more sixth leads 6, one or more seventh leads 7A, and one or more eighth leads 7B.

[0013] In these figures, three mutually orthogonal directions will be referred to as appropriate. For example, in the example shown in Figure 1, the first direction x is the direction extending from left to right in the figure. The direction orthogonal to the first direction x is the second direction y, and the direction orthogonal to the first direction x and the second direction y is the third direction z.

[0014] The sealing resin 9 includes an insulating material such as an epoxy resin. As shown in Figures 1 to 11, the sealing resin 9 can include a first resin surface 901, a second resin surface 902, a third resin surface 903, a fourth resin surface 904, a fifth resin surface 905, a sixth resin surface 906, a first corner portion 91, a second corner portion 92, a third corner portion 93, and a fourth corner portion 94.

[0015] The first resin surface 901 is a surface facing a first side x1 in the first direction x. The second resin surface 902 is a surface facing a second side x2 in the first direction x. The third resin surface 903 is a surface facing a first side y1 in the second direction y. The fourth resin surface 904 is a surface facing a second side y2 in the second direction y. The fifth resin surface 905 is a surface facing a first side z1 in the third direction z. The sixth resin surface 906 is a surface facing a second side z2 in the third direction z.

[0016] The first corner portion 91 is sandwiched between the first resin surface 901 and the third resin surface 903. The first corner portion 91 may be the boundary between the first resin surface 901 and the third resin surface 903. The second corner portion 92 is sandwiched between the first resin surface 901 and the fourth resin surface 904. The second corner portion 92 may be the boundary between the first resin surface 901 and the fourth resin surface 904. The third corner portion 93 is sandwiched between the second resin surface 902 and the third resin surface 903. The third corner portion 93 may be the boundary between the second resin surface 902 and the third resin surface 903. The fourth corner portion 94 is sandwiched between the second resin surface 902 and the fourth resin surface 904. The fourth corner portion 94 may be the boundary between the second resin surface 902 and the fourth resin surface 904. The sealing resin 9 may have a rectangular shape having a first corner 91, a second corner 92, a third corner 93, and a fourth corner 94 at its four corners when viewed in the third direction z.

[0017] The first lead 1 includes a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. As shown in FIGS. 1 to 8 , 12 , and 13 , the first lead 1 includes a first island portion 10, a first extending portion 11, and a second extending portion 12. The first lead 1 may include a fifth extending portion 13 and a seventh extending portion 14. The first lead 1 may include a first main surface 101, a first back surface 102, a first thick portion 1a, and a first thin portion 1b. The thickness of the first lead 1 in the third direction z is not limited in any way and is, for example, 0.18 mm or more and 0.22 mm or less.

[0018] The first main surface 101 faces the z1 side in the third direction z. The first back surface 102 faces the z2 side in the third direction z. The first back surface 102 may be exposed from the sixth resin surface 906.

[0019] The first back surface 102 may include a first region 1021, a second region 1022, and a third region 1023. The first region 1021 may be separated from the first resin surface 901, the second resin surface 902, the third resin surface 903, and the fourth resin surface 904. The first region 1021 may overlap with the center of the first extension portion 11 when viewed in the third direction z. The shape of the first region 1021 is not limited in any way, and may be, for example, an elongated rectangle with the second direction y as the longitudinal direction.

[0020] The second region 1022 may be located on the first side y1 in the second direction y with respect to the first region 1021. The second region 1022 may be in contact with the third resin surface 903. The second region 1022 may be smaller than the first region 1021.

[0021] The third region 1023 may be located on the second side y2 in the second direction y with respect to the first region 1021. The third region 1023 may be in contact with the fourth resin surface 904. The third region 1023 may be smaller than the first region 1021.

[0022] The first thick portion 1a is a portion that overlaps the first main surface 101 and the first back surface 102 when viewed in the third direction z. The first thin portion 1b is a portion that overlaps the first main surface 101 but does not overlap the first back surface 102 when viewed in the third direction z. The first thin portion 1b may protrude from the first back surface 102 when viewed in the third direction z. The thickness of the first thin portion 1b in the third direction z is thinner than the thickness of the first thick portion 1a in the third direction z. In this embodiment, the first thick portion 1a may be divided into three regions corresponding to the first region 1021, the second region 1022, and the third region 1023.

[0023] The first island portion 10 may include a portion of the first main surface 101 and a portion of the first back surface 102, and may include a portion of the first thick portion 1a and a portion of the first thin portion 1b. The first island portion 10 may be spaced apart from the first resin surface 901, the second resin surface 902, the third resin surface 903, and the fourth resin surface 904. The first island portion 10 may overlap the center of the first lead 1 when viewed in the third direction z. The shape of the first island portion 10 is not limited in any way and may be, for example, an elongated rectangle with the second direction y as its longitudinal direction.

[0024] The first extending portion 11 is connected to the first island portion 10 and is exposed from the sealing resin 9 at the first corner portion 91. The first extending portion 11 may be composed of only the first thin portion 1b. The first extending portion 11 may extend from the first island portion 10 at an angle of 45° with respect to the first direction x.

[0025] The second extending portion 12 is connected to the first island portion 10 and is exposed from the sealing resin 9 at the second corner portion 92. The second extending portion 12 may be composed of only the first thin portion 1b. The second extending portion 12 may extend from the first island portion 10 at an angle of 45° with respect to the first direction x.

[0026] The fifth extending portion 13 is connected to the first island portion 10 and is located on the second side x2 in the first direction x with respect to the first extending portion 11. The fifth extending portion 13 is exposed from the third resin surface 903.

[0027] The specific configuration of the fifth extending portion 13 is not limited in any way. As shown in FIGS. 4 , 5 , 7 , 8 , and 12 , the fifth extending portion 13 may include a base 130, a first branch 131, and a second branch 132. The base 130 is connected to the first island portion 10 and is located on a first side y1 in the second direction y relative to the first island portion 10. The first branch 131 is connected to the base 130 and exposed from the third resin surface 903. The second branch 132 is located away from the first branch 131 on a second side x2 in the first direction x. The second branch 132 is connected to the base 130 and exposed from the third resin surface 903.

[0028] The base 130 may be composed of a first thick portion 1a and a first thin portion 1b. The first branch 131 may be composed only of the first thick portion 1a. The second branch 132 may be composed only of the first thin portion 1b. Each of the base 130, the first branch 131, and the second branch 132 may be composed of the first thick portion 1a and the first thin portion 1b, may be composed only of the first thick portion 1a, or may be composed only of the first thin portion 1b.

[0029] The width W3 of the base 130 in the first direction x may be larger than the width W4 of the first region 1021 in the first direction x. The sizes of the widths W3 and W4 are not limited in any way, and for example, the width W3 may be 0.5 mm or more and 1.1 mm or less, and the width W4 may be 0.5 mm or more and 0.9 mm or less.

[0030] The seventh extending portion 14 is connected to the first island portion 10 and is located on the second side x2 in the first direction x with respect to the second extending portion 12. The seventh extending portion 14 is exposed from the fourth resin surface 904.

[0031] The specific configuration of the seventh extension portion 14 is not limited in any way. As shown in FIGS. 4 , 5 , 7 , 8 , and 13 , the seventh extension portion 14 may include a base portion 140, a first branch portion 141, and a second branch portion 142. The base portion 140 is connected to the first island portion 10 and is located on the second side y2 in the second direction y relative to the first island portion 10. The first branch portion 141 is connected to the base portion 140 and exposed from the fourth resin surface 904. The second branch portion 142 is located away from the first branch portion 141 on the second side x2 in the first direction x. The second branch portion 142 is connected to the base portion 140 and exposed from the fourth resin surface 904.

[0032] The base 140 may be formed of a first thick portion 1a and a first thin portion 1b. The first branch 141 may be formed of only the first thick portion 1a. The second branch 142 may be formed of only the first thin portion 1b. Each of the base 140, the first branch 141, and the second branch 142 may be formed of the first thick portion 1a and the first thin portion 1b, may be formed of only the first thick portion 1a, or may be formed of only the first thin portion 1b.

[0033] The width W5 of the base 140 in the first direction x may be larger than the width W4 in the first direction x of the first region 1021. The size of the width W5 is not limited in any way, and the width W5 may be, for example, 0.5 mm or more and 1.1 mm or less.

[0034] The second lead 2 includes a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. As shown in FIGS. 1 to 6 , 9 to 11 , 12 , and 13 , the second lead 2 is located on a second side x2 in the first direction x with respect to the first lead 1. The second lead 2 includes a second island portion 20, a third extending portion 21, and a fourth extending portion 22. The second lead 2 may include a sixth extending portion 23 and an eighth extending portion 24. The second lead 2 may include a second main surface 201, a second rear surface 202, a second thick portion 2a, and a second thin portion 2b. The thickness of the second lead 2 in the third direction z is not limited in any way and is, for example, 0.8 mm or more and 1.0 mm or less.

[0035] The second main surface 201 faces the z1 side in the third direction z. The second back surface 202 faces the z2 side in the third direction z. The second back surface 202 may be exposed from the sixth resin surface 906.

[0036] The shape of second rear surface 202 is not limited in any way, and may be, for example, an elongated rectangle (or a substantially elongated rectangle) with the second direction y as the longitudinal direction.

[0037] The second thick portion 2a is a portion that overlaps with the second main surface 201 and the second back surface 202 when viewed in the third direction z. The second thin portion 2b is a portion that overlaps with the second main surface 201 but does not overlap with the second back surface 202 when viewed in the third direction z. The second thin portion 2b may protrude from the second back surface 202 when viewed in the third direction z. The thickness of the second thin portion 2b in the third direction z is thinner than the thickness of the second thick portion 2a in the third direction z.

[0038] The second island portion 20 may include a portion of the second main surface 201 and a portion of the second back surface 202, and may include a portion of the second thick portion 2a and a portion of the second thin portion 2b. The second island portion 20 may be spaced apart from the first resin surface 901, the second resin surface 902, the third resin surface 903, and the fourth resin surface 904. The second island portion 20 may overlap with the center of the second lead 2 when viewed in the third direction z. The shape of the second island portion 20 is not limited in any way and may be, for example, an elongated rectangle with the second direction y as its longitudinal direction.

[0039] The second island portion 20 is located on a second side x2 in the first direction x with respect to the first island portion 10. The width W1 of the first island portion 10 in the first direction x may be smaller than the width W2 of the second island portion 20 in the first direction x. The specific sizes of the widths W1 and W2 are not limited in any way, and for example, the width W1 may be 1.0 mm or more and 1.4 mm or less, and the width W2 may be 2.2 mm or more and 2.6 mm or less.

[0040] The third extension portion 21 is connected to the second island portion 20 and is exposed from the sealing resin 9 at a third corner portion 93. The third extension portion 21 may be composed of only the second thin portion 2b. The third extension portion 21 may extend from the second island portion 20 at an angle of 45° with respect to the first direction x.

[0041] The fourth extension portion 22 is connected to the second island portion 20 and is exposed from the sealing resin 9 at a fourth corner portion 94. The fourth extension portion 22 may be formed only by the second thin portion 2b. The fourth extension portion 22 may extend from the second island portion 20 at an angle of 45° with respect to the first direction x.

[0042] The sixth extending portion 23 is connected to the second island portion 20 and is located on the first side x1 in the first direction x with respect to the third extending portion 21. The sixth extending portion 23 is exposed from the third resin surface 903.

[0043] The specific configuration of the sixth extending portion 23 is not limited in any way. The sixth extending portion 23 may be formed only by the first thin portion 1b. The sixth extending portion 23 may be formed by the first thick portion 1a and the first thin portion 1b, or may be formed only by the first thick portion 1a. The width W6 of the sixth extending portion 23 in the first direction x may be smaller than the width W3 of the base portion 130. The size of the width W6 is not limited in any way, and may be, for example, 3.0 mm or more and 3.4 mm or less.

[0044] The eighth extending portion 24 is connected to the second island portion 20 and is located on the first side x1 in the first direction x with respect to the fourth extending portion 22. The eighth extending portion 24 is exposed from the fourth resin surface 904.

[0045] The specific configuration of the eighth extending portion 24 is not limited in any way. The eighth extending portion 24 may be formed only by the first thin portion 1b. The eighth extending portion 24 may be formed by the first thick portion 1a and the first thin portion 1b, or may be formed only by the first thick portion 1a. The width W7 of the eighth extending portion 24 in the first direction x may be smaller than the width W5 of the base portion 140. The size of the width W7 is not limited in any way, and the width W5 may be, for example, 0.5 mm or more and 1.1 mm or less.

[0046] 2 to 5, 9, and 12, the third lead 3 is located between the fifth extending portion 13 and the sixth extending portion 23 in the first direction x, and is spaced apart from the first lead 1 and the second lead 2. The third lead 3 is exposed from the third resin surface 903.

[0047] The third lead 3 may include a third main surface 301, a third back surface 302, a third thick portion 3 a, and a third thin portion 3 b. The thickness of the third lead 3 in the third direction z is not limited in any way and is, for example, 0.18 mm or more and 0.22 mm or less.

[0048] The third main surface 301 faces the z1 side in the third direction z. The third back surface 302 faces the z2 side in the third direction z. The third back surface 302 may be exposed from the sixth resin surface 906.

[0049] The shape of the third rear surface 302 is not limited in any way, and may have, for example, a semicircular portion on the second side y2 in the second direction y.

[0050] The third thick portion 3a is a portion that overlaps with the third main surface 301 and the third back surface 302 when viewed in the third direction z. The third thin portion 3b is a portion that overlaps with the third main surface 301 but does not overlap with the third back surface 302 when viewed in the third direction z. The third thin portion 3b may protrude from the third back surface 302 when viewed in the third direction z. The thickness of the third thin portion 3b in the third direction z is thinner than the thickness of the third thick portion 3a in the third direction z.

[0051] The tip of the third lead 3 on the second side y2 in the second direction y may be formed by a third thick portion 3a.

[0052] As shown in FIGS. 2 to 5, 11, and 12, the one or more fourth leads 4 are located on the second side x2 in the first direction x with respect to the sixth extending portion 23, and are spaced apart from the second lead 2. The number of the one or more fourth leads 4 is not limited in any way and may be one or more. In the illustrated example, the number of the one or more fourth leads 4 is three. The three fourth leads 4 are spaced apart from each other in the first direction x. The fourth leads 4 are exposed from the third resin surface 903.

[0053] The fourth lead 4 may include a fourth main surface 401, a fourth back surface 402, a fourth thick portion 4 a, and a fourth thin portion 4 b. The thickness of the fourth lead 4 in the third direction z is not limited in any way and is, for example, not less than 0.18 mm and not more than 0.22 mm.

[0054] The fourth main surface 401 faces the z1 side in the third direction z. The fourth back surface 402 faces the z2 side in the third direction z. The fourth back surface 402 may be exposed from the sixth resin surface 906.

[0055] The shape of the fourth rear surface 402 is not limited in any way, and may have, for example, a semicircular portion on the second side y2 in the second direction y.

[0056] The fourth thick portion 4a is a portion that overlaps with the fourth main surface 401 and the fourth back surface 402 when viewed in the third direction z. The fourth thin portion 4b is a portion that overlaps with the fourth main surface 401 but does not overlap with the fourth back surface 402 when viewed in the third direction z. The fourth thin portion 4b may protrude from the fourth back surface 402 when viewed in the third direction z. The thickness of the fourth thin portion 4b in the third direction z is thinner than the thickness of the fourth thick portion 4a in the third direction z.

[0057] The tip of the fourth lead 4 on the second side y2 in the second direction y may be formed by a fourth thin portion 4b.

[0058] A length L1 in the second direction y of at least a portion of the third lead 3 on the first side x1 in the first direction x is shorter than a length L2 in the second direction y of the fourth lead 4. In the illustrated example, the length L1 in the second direction y of the entire third lead 3 is shorter than the length L2. The specific sizes of the lengths L1 and L2 are not limited in any way, and for example, the length L1 may be 0.35 mm or more and 0.45 mm or less, and the length L2 may be 0.39 mm or more and 0.49 mm or less.

[0059] In the illustrated example, the arrangement pitches of the first branch portion 131, the second branch portion 132, the third lead 3, the sixth extending portion 23, and the plurality of fourth leads 4 may be equal to one another.

[0060] 2, 3, 9, and 13, the fifth lead 5 is located between the seventh extending portion 14 and the eighth extending portion 24 in the first direction x, and is spaced apart from the first lead 1 and the second lead 2. The fifth lead 5 is exposed from the fourth resin surface 904.

[0061] The fifth lead 5 may include a fifth main surface 501, a fifth back surface 502, a fifth thick portion 5 a, and a fifth thin portion 5 b. The thickness of the fifth lead 5 in the third direction z is not limited in any way and is, for example, 0.35 mm to 0.45 mm.

[0062] The fifth main surface 501 faces the z1 side in the third direction z. The fifth back surface 502 faces the z2 side in the third direction z. The fifth back surface 502 may be exposed from the sixth resin surface 906.

[0063] The shape of the fifth rear surface 502 is not limited in any way, and may have, for example, a semicircular portion on the first side y1 in the second direction y.

[0064] The fifth thick portion 5a is a portion that overlaps with the fifth main surface 501 and the fifth back surface 502 when viewed in the third direction z. The fifth thin portion 5b is a portion that overlaps with the fifth main surface 501 but does not overlap with the fifth back surface 502 when viewed in the third direction z. The fifth thin portion 5b may protrude from the fifth back surface 502 when viewed in the third direction z. The thickness of the fifth thin portion 5b in the third direction z is thinner than the thickness of the fifth thick portion 5a in the third direction z.

[0065] The tip of the fifth lead 5 on the first side y1 in the second direction y may be formed by a fifth thick portion 5a.

[0066] As shown in FIGS. 2 to 5, 11, and 13, the one or more sixth leads 6 are located on the second side x2 in the first direction x with respect to the eighth extending portion 24, and are spaced apart from the second lead 2. The number of the one or more sixth leads 6 is not limited in any way and may be one or more. In the illustrated example, the number of the one or more sixth leads 6 is three. The three sixth leads 6 are spaced apart from each other in the first direction x. The sixth leads 6 are exposed from the fourth resin surface 904.

[0067] The sixth lead 6 may include a fourth main surface 601, a fourth back surface 602, a fourth thick portion 6 a, and a fourth thin portion 6 b. The thickness of the sixth lead 6 in the third direction z is not limited in any way and is, for example, not less than 0.18 mm and not more than 0.22 mm.

[0068] The fourth main surface 601 faces the z1 side in the third direction z. The fourth back surface 602 faces the z2 side in the third direction z. The fourth back surface 602 may be exposed from the sixth resin surface 906.

[0069] The shape of the fourth rear surface 602 is not limited in any way, and may have, for example, a semicircular portion on the first side y1 in the second direction y.

[0070] The fourth thick portion 6a is a portion that overlaps with the fourth main surface 601 and the fourth back surface 602 when viewed in the third direction z. The fourth thin portion 6b is a portion that overlaps with the fourth main surface 601 but does not overlap with the fourth back surface 602 when viewed in the third direction z. The fourth thin portion 6b may protrude from the fourth back surface 602 when viewed in the third direction z. The thickness of the fourth thin portion 6b in the third direction z is thinner than the thickness of the fourth thick portion 6a in the third direction z.

[0071] The tip of the sixth lead 6 on the first side y1 in the second direction y may be formed by the fourth thin portion 6b.

[0072] A length L3 in the second direction y of at least a portion of the fifth lead 5 on the first side x1 in the first direction x is shorter than a length L4 in the second direction y of the sixth lead 6. In the example shown, the length L3 in the second direction y of the entire fifth lead 5 is shorter than the length L4. The specific sizes of the lengths L3 and L4 are not limited in any way, and for example, the length L3 may be 0.35 mm or more and 0.45 mm or less, and the length L4 may be 0.39 mm or more and 0.49 mm or less.

[0073] In the illustrated example, the arrangement pitches of the first branch portion 141, the second branch portion 142, the fifth lead 5, the eighth extending portion 24 and the plurality of 6 may be equal to one another.

[0074] As shown in FIGS. 2, 3, and 6, the one or more seventh leads 7A are located between the first extending portion 11 and the second extending portion 12 in the second direction y. The one or more seventh leads 7A are exposed from the first resin surface 901. The number of the one or more seventh leads 7A is not limited in any way and may be one or more. In the illustrated example, the number of the one or more seventh leads 7A is seven. The seven seventh leads 7A are spaced apart from each other in the second direction y.

[0075] The seventh lead 7A may include a seventh main surface 701A, a seventh back surface 702A, a seventh thick portion 7Aa, and a seventh thin portion 7Ab. The thickness of the seventh lead 7A in the third direction z is not limited in any way and is, for example, 0.18 mm to 0.22 mm.

[0076] The seventh main surface 701A faces the z1 side in the third direction z. The seventh back surface 702A faces the z2 side in the third direction z. The seventh back surface 702A may be exposed from the sixth resin surface 906.

[0077] The shape of the seventh back surface 702A is not limited in any way, and may have, for example, a semicircular portion on the second side x2 in the x direction.

[0078] The seventh thick portion 7Aa is a portion that overlaps with the seventh main surface 701A and the seventh back surface 702A when viewed in the third direction z. The seventh thin portion 7Ab is a portion that overlaps with the seventh main surface 701A but does not overlap with the seventh back surface 702A when viewed in the third direction z. The seventh thin portion 7Ab may protrude from the seventh back surface 702A when viewed in the third direction z. The thickness of the seventh thin portion 7Ab in the third direction z is thinner than the thickness of the seventh thick portion 7Aa in the third direction z.

[0079] The tip of the seventh lead 7A on the second side x2 in the first direction x may be formed by a seventh thin portion 7Ab.

[0080] The arrangement pitch of the plurality of seventh leads 7A may be the same as the arrangement pitch of the plurality of fourth leads 4, for example.

[0081] As shown in FIGS. 2, 3, and 6, the one or more eighth leads 7B are located between the third extending portion 21 and the fourth extending portion 22 in the second direction y. The one or more eighth leads 7B are exposed from the second resin surface 902. The number of the one or more eighth leads 7B is not limited in any way and may be one or more. In the illustrated example, the number of the one or more eighth leads 7B is seven. The seven eighth leads 7B are spaced apart from each other in the second direction y.

[0082] The eighth lead 7B may include an eighth main surface 701B, an eighth back surface 702B, an eighth thick portion 7Ba, and an eighth thin portion 7Bb. The thickness of the eighth lead 7B in the third direction z is not limited in any way and is, for example, 0.18 mm to 0.22 mm.

[0083] The eighth main surface 701B faces the z1 side in the third direction z. The eighth back surface 702B faces the z2 side in the third direction z. The eighth back surface 702B may be exposed from the sixth resin surface 906.

[0084] The shape of the eighth back surface 702B is not limited in any way, and may have, for example, a semicircular portion on the first side x1 in the x direction.

[0085] The eighth thick portion 7Ba is a portion that overlaps with the eighth main surface 701B and the eighth back surface 702B when viewed in the third direction z. The eighth thin portion 7Bb is a portion that overlaps with the eighth main surface 701B but does not overlap with the eighth back surface 702B when viewed in the third direction z. The eighth thin portion 7Bb may protrude from the eighth back surface 702B when viewed in the third direction z. The thickness of the eighth thin portion 7Bb in the third direction z is thinner than the thickness of the eighth thick portion 7Ba in the third direction z.

[0086] The tip of the eighth lead 7B on the first side x1 in the first direction x may be formed by an eighth thin portion 7Bb.

[0087] The arrangement pitch of the plurality of eighth leads 7B may be the same as the arrangement pitch of the plurality of seventh leads 7A, for example.

[0088] 2, 6, 7, and 8, the first semiconductor element 8A is mounted on the first main surface 101 of the first island portion 10. The first semiconductor element 8A may include a first element body 80A and a plurality of first electrode pads 81A. The specific configuration of the first semiconductor element 8A is not limited in any way, and may be, for example, an LSI (Large Scale Integration) or the like.

[0089] In the illustrated example, the first element body 80A may have an elongated rectangular shape with the longitudinal direction being the second direction y. The multiple first electrode pads 81A may be located on the z1 side of the first element body 80A in the third direction z. The multiple first electrode pads 81A may be aligned in the second direction y.

[0090] One ends of the wires 88A may be individually connected to the first electrode pads 81A, and the other ends of the wires 88A may be individually connected to the fifth extension portion 13, the seventh extension portion 14, and the seventh leads 7A.

[0091] 2, 6, and 9 to 11, the second semiconductor element 8B is mounted on the second main surface 201 of the second island portion 20. The second semiconductor element 8B may include a second element body 80B and a plurality of second electrode pads 81B. The specific configuration of the second semiconductor element 8B is not limited in any way, and may be, for example, an LSI (Large Scale Integration) or the like.

[0092] In the illustrated example, the second element body 80B may have an elongated rectangular shape with the longitudinal direction being the second direction y. The multiple second electrode pads 81B may be located on the z1 side of the second element body 80B in the third direction z. The multiple second electrode pads 81B may be aligned in the second direction y.

[0093] One ends of the wires 88B may be individually connected to the second electrode pads 81B, and the other ends of the wires 88B may be individually connected to the third lead 3, the sixth extension 23, the fourth leads 4, the fifth lead 5, the eighth extension 24, the sixth leads 6, and the eighth leads 7B.

[0094] Next, the operation of the semiconductor device A1 will be described.

[0095] According to this embodiment, the first semiconductor element 8A is mounted on a first island 10. In the first island 10, a first extending portion 11 and a second extending portion 12 are connected. The second semiconductor element 8B is mounted on a second island 20. In the second island 20, a third extending portion 21 and a fourth extending portion 22 are connected. Therefore, it is possible to more appropriately provide a plurality of first semiconductor elements 8A and second semiconductor elements 8B.

[0096] The first lead 1 further includes a fifth extending portion 13. This makes it possible to more reliably support the first island portion 10, for example, during the manufacture of the semiconductor device A1.

[0097] The fifth extension 13 includes a base 130, a first branch 131, and a second branch 132. The inclusion of the base 130 allows for more reliable support of the first island 10. The inclusion of the first branch 131 and the second branch 132 allows for a reduction in the length in the first direction x of the metal portion to be cut during the manufacture of the semiconductor device A1.

[0098] The first branch portion 131 is made up of a part of the first thick portion 1 a and a part of the first thin portion 1 b, so that the second region 1022 of the first branch portion 131 can be used as a mounting terminal when the semiconductor device A1 is mounted.

[0099] The second branch portion 132 is formed only by the first thin portion 1b, which makes it possible to extend the insulation distance from the adjacent second lead 2 on the second side x2 in the first direction x.

[0100] The width W3 of the base 130 in the first direction x is greater than the width W4 of the first region 1021 in the first direction x. This allows the first island 10 to be supported more firmly.

[0101] The second lead 2 further includes a sixth extending portion 23. This makes it possible to more reliably support the second island portion 20, for example, during the manufacture of the semiconductor device A1.

[0102] The width W1 of the first island portion 10 is smaller than the width W2 of the second island portion 20. On the other hand, the width W3 of the base portion 130 is larger than the width W6 of the sixth extension portion 23. This improves the support of the first island portion 10. By making the width W6 relatively small, the insulation distance between the adjacent third lead 3, fourth lead 4, etc. can be extended.

[0103] The length L1 of at least the portion of the third lead 3 on the first side x1 in the first direction x in the second direction y is shorter than the length L2 of the fourth lead 4 in the second direction y. This makes it possible to extend the insulation distance between the third lead 3 and the first lead 1. The tip of the sixth extension 23 on the second side y2 in the second direction y is formed by the second thick portion 2a. This makes it possible to more reliably extend the insulation distance between the third lead 3 and the first lead 1.

[0104] 14 and 15 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. The configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0105] 14 shows a first modification of the semiconductor device A11. The semiconductor device A11 of this modification has a different configuration of the third lead 3 from the above-described example.

[0106] In the third lead 3 of this modification, the tip on the second side y2 in the second direction y is configured by a third thin portion 3b. The portion of the third thin portion 3b on the second side x2 in the first direction x protrudes from the third thick portion 3a to the second side y2 in the second direction y. The portion of the third thin portion 3b on the first side x1 in the first direction x does not protrude from the third thick portion 3a to the second side y2 in the second direction y.

[0107] A length L1 in the second direction y of a portion of the third lead 3 on the first side x1 in the first direction x is shorter than a length L2 in the second direction y of the fourth lead 4. A length L5 in the second direction y of a portion of the third lead 3 on the second side x2 in the first direction x is equal to the length L2.

[0108] This modification makes it possible to more appropriately provide a plurality of first semiconductor elements 8A and second semiconductor elements 8B. In this modification, the length L1 in the second direction y of the portion of the third lead 3 on the first side x1 in the first direction x is shorter than the length L2 in the second direction y of the fourth lead 4, which makes it possible to increase the distance between the third lead 3 and the first lead 1, which is preferable for insulating the first lead 1 and the third lead 3.

[0109] 15 shows a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment does not include the third lead 3 of the semiconductor device A1 described above. The semiconductor device A2 may not include the fifth lead 5 of the semiconductor device A1 described above.

[0110] In this embodiment, the fifth extending portion 13 and the sixth extending portion 23 are adjacent to each other in the first direction x. In this embodiment, the seventh extending portion 14 and the eighth extending portion 24 may be adjacent to each other in the first direction x.

[0111] This embodiment makes it possible to more appropriately include a plurality of first semiconductor elements 8A and second semiconductor elements 8B. As can be understood from this embodiment, at least one of the third lead 3 and the fifth lead 5 may be omitted.

[0112] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0113] Supplementary Note 1. A semiconductor device comprising: a first lead (1) located on a first side (x1) in a first direction (x); a second lead (2) located away from the first lead (1) on a second side (x2) in the first direction (x); a first semiconductor element (8A); a second semiconductor element (8B); and a sealing resin (9) covering the first semiconductor element (8A) and the second semiconductor element (8B), The sealing resin (9) includes a first resin surface (901) facing the first side (x1) in the first direction (x), a second resin surface (902) facing the second side (x2) in the first direction (x), a third resin surface (903) facing a first side (y1) in a second direction (y) perpendicular to the first direction (x), and a fourth resin surface (904) facing a second side (y2) in the second direction (y), as well as a first corner portion (91) sandwiched between the first resin surface (901) and the third resin surface (903), a second corner portion (92) sandwiched between the first resin surface (901) and the fourth resin surface (904), a third corner portion (93) sandwiched between the second resin surface (902) and the third resin surface (903), and a fourth corner portion (94) sandwiched between the second resin surface (902) and the fourth resin surface (904), the first lead (1) includes a first island portion (10), a first extending portion (11) and a second extending portion (12); the second lead (2) includes a second island portion (20), a third extending portion (21) and a fourth extending portion (22); the first semiconductor element (8A) is mounted on the first island portion (10); the second semiconductor element (8B) is mounted on the second island portion (20); the first extending portion (11) is exposed from the sealing resin (9) at the first corner portion (91); the second extending portion (12) is exposed from the sealing resin (9) at the second corner portion (92); and the third extending portion (21) is exposed from the sealing resin (9) at the third corner portion (93); The semiconductor device (A1), wherein the fourth extension portion (22) is exposed from the sealing resin (9) at the fourth corner portion (94). Appendix 2. The semiconductor device (A1) according to Appendix 1, wherein the width of the first island portion (10) in the first direction (x) is smaller than the width of the second island portion (20) in the first direction (x).Supplementary Note 3. The semiconductor device (A1) according to Supplementary Note 2, wherein the first lead (1) includes a first main surface (101) facing a first side (z1) in a third direction (z) perpendicular to the first direction (x) and the second direction (y) and on which the first semiconductor element (8A) is mounted, a first back surface (102) facing a second side (z2) in the third direction (z), a first thick portion (1a) overlapping the first main surface (101) and the first back surface (102) when viewed in the third direction (z), and a first thin portion (1b) overlapping the first main surface (101) and not overlapping the first back surface (102) when viewed in the third direction (z). The semiconductor device (A1) according to Supplementary Note 3, wherein the first lead (1) includes a fifth extension portion (13) located on the second side (x2) in the first direction (x) with respect to the first extension portion (11) and exposed from the third resin surface (903).Supplementary Note 5. The semiconductor device (A1) according to Supplementary Note 4, wherein the fifth extension portion (13) includes a base portion (130) connected to the first island portion (10), a first branch portion (131) connected to the base portion (130) and exposed from the third resin surface (903), and a second branch portion (132) located away from the first branch portion (131) on the second side (x2) in the first direction (x), connected to the base portion (130), and exposed from the third resin surface (903).Supplementary Note 6. The semiconductor device (A1) according to Supplementary Note 5, wherein the first branch portion (131) is constituted by a part of the first thick portion (1a) and a part of the first thin portion (1b).Supplementary Note 7: The semiconductor device (A1) according to Supplementary Note 6, wherein the second branch portion (132) is constituted only by the first thin portion (1b).Supplementary Note 8: The semiconductor device (A1) according to any one of Supplementary Notes 5 to 7, wherein the width of the base portion (130) in the first direction (x) is greater than the width of a portion of the first back surface (102) that overlaps with the first island portion (10) as viewed in the third direction (z).Supplementary Note 9. The semiconductor device (A1) according to any one of Supplementary Notes 4 to 8, wherein the second lead (2) includes a second main surface (201) facing a first side (z1) in the third direction (z) and on which the second semiconductor element (8B) is mounted, a second back surface (202) facing a second side (z2) in the third direction (z), a second thick portion (2a) overlapping the second main surface (201) and the second back surface (202) when viewed in the third direction (z), and a second thin portion (2b) overlapping the second main surface (201) but not overlapping the second back surface (202) when viewed in the third direction (z). The semiconductor device (A1) according to Supplementary Note 9, wherein the second lead (2) includes a sixth extension portion (23) located on the first side (x1) in the first direction (x) with respect to the third extension portion (21) and exposed from the third resin surface (903). Supplementary Note 11. The semiconductor device (A1) according to Supplementary Note 10, wherein the sixth extension portion (23) is constituted only by the second thin portion (2b). Supplementary Note 12. The semiconductor device (A1) according to Supplementary Note 10 or 11, wherein the width of the sixth extension portion (23) in the first direction (x) is smaller than the width of the fifth extension portion (13) in the first direction (x). Supplementary Note 13. The semiconductor device (A1) according to any one of Supplementary Notes 10 to 12, further comprising a third lead (3) located between the fifth extension portion (13) and the sixth extension portion (23) in the first direction (x) and spaced apart from the first lead (1) and the second lead (2). Supplementary Note 14. The semiconductor device (A1) according to Supplementary Note 13, wherein the third lead (3) includes a third main surface (301) facing a first side (z1) in the third direction (z), a third back surface (302) facing a second side (z2) in the third direction (z), a third thick portion (3a) overlapping the third main surface (301) and the third back surface (302) as viewed in the third direction (z), and a third thin portion (3b) overlapping the third main surface (301) but not overlapping the third back surface (302) as viewed in the third direction (z).Appendix 15. The semiconductor device (A1) according to Appendix 14, further comprising a fourth lead (4) located on the second side (x2) in the first direction (x) with respect to the sixth extension portion (23) and spaced apart from the second lead (2), wherein the length in the second direction (y) of at least a portion of the third lead (3) on the first side (x1) in the first direction (x) is shorter than the length in the second direction (y) of the fourth lead (4). Appendix 16. The semiconductor device (A1) according to Appendix 15, wherein the length in the second direction (y) of the sixth extension portion (23) is shorter than the length in the second direction (y) of the fourth lead (4). Appendix 17. The semiconductor device (A1) according to Appendix 15 or 16, wherein a tip of the sixth extension portion (23) on the second side (y2) in the second direction (y) is constituted by the second thick portion (2a). Appendix 18. The semiconductor device (A1) according to any one of Supplementary Notes 10 to 17, wherein the first lead (1) includes a seventh extension portion (14) located on the second side (x2) in the first direction (x) with respect to the second extension portion (12) and exposed from the fourth resin surface (904).Supplementary Note 19. The semiconductor device (A1) according to Supplementary Note 18, wherein the seventh extension portion (14) includes a base portion (140) connected to the first island portion (10), a first branch portion (141) connected to the base portion (140) and exposed from the fourth resin surface (904), and a second branch portion (142) located away from the first branch portion (141) on the second side (x2) in the first direction (x), connected to the base portion (140), and exposed from the fourth resin surface (904).Supplementary Note 20. The semiconductor device (A1) according to Appendix 19, wherein the first branch portion (141) is constituted by a part of the first thick portion (1 a) and a part of the first thin portion (1 b). Appendix 21. The semiconductor device (A1) according to Appendix 20, wherein the second branch portion (142) is constituted only by the first thin portion (1 b).

[0114] A1, A11, A2: semiconductor device 1: first lead 1a: first thick portion 1b: first thin portion 2: second lead 2a: second thick portion 2b: second thin portion 3: third lead 3a: third thick portion 3b: third thin portion 4: fourth lead 4a: fourth thick portion 4b: fourth thin portion 5: fifth lead 5a: fifth thick portion 5b: fifth thin portion 6: sixth lead 6a: fourth thick portion 6b: fourth thin portion 7A: seventh lead 7Aa: seventh thick portion 7Ab: seventh thin portion 7B: eighth lead 7Ba: eighth thick portion 7Bb: eighth thin portion 8A: first semiconductor element 8B: second semiconductor element 9: sealing resin 10: first island portion 11: First extension portion 12: Second extension portion 13: Fifth extension portion 14: Seventh extension portion 20: Second island portion 21: Third extension portion 22: Fourth extension portion 23: Sixth extension portion 24: Eighth extension portion 80A: First element body 80B: Second element body 81A: First electrode pad 81B: Second electrode pad 88A: Wire 88B: Wire 91: First corner portion 92: Second corner portion 93: Third corner portion 94: Fourth corner portion 101: First main surface 102: First back surface 130: Base portion 131: First branch portion 132: Second branch portion 140: Base portion 141: First branch portion 142: Second branch portion 201: Second main surface 202: Second back surface 301: Third main surface 302: Third back surface 401: Fourth main surface 402: Fourth back surface 501: Fifth main surface 502: Fifth back surface 601: Fourth main surface 602: Fourth back surface 701A: Seventh main surface 701B: Eighth main surface 702A: Seventh back surface 702B: Eighth back surface 901: First resin surface 902: Second resin surface 903: Third resin surface 904: Fourth resin surface 905: Fifth resin surface 906: Sixth resin surface 1021: First region 1022: Second region 1023: Third region x: First direction x1: First side x2: Second side y: Second direction y1: First side y2: Second side z: Third direction z1: First side z2: second side

Claims

1. A semiconductor device comprising: a first lead located on a first side in a first direction; a second lead located away from the first lead on a second side in the first direction; a first semiconductor element; a second semiconductor element; and a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the sealing resin includes a first resin surface facing the first side in the first direction, a second resin surface facing the second side in the first direction, a third resin surface facing the first side in a second direction perpendicular to the first direction, and a fourth resin surface facing the second side in the second direction, a first corner portion sandwiched between the first resin surface and the third resin surface, a second corner portion sandwiched between the first resin surface and the fourth resin surface, a third corner portion sandwiched between the second resin surface and the third resin surface, and a fourth corner portion sandwiched between the second resin surface and the fourth resin surface, wherein the first lead includes a first island portion, a first extending portion, and a second extending portion, a semiconductor device, wherein the second lead includes a second island portion, a third extension portion, and a fourth extension portion; the first semiconductor element is mounted on the first island portion; the second semiconductor element is mounted on the second island portion; the first extension portion is exposed from the sealing resin at the first corner portion; the second extension portion is exposed from the sealing resin at the second corner portion; the third extension portion is exposed from the sealing resin at the third corner portion; and the fourth extension portion is exposed from the sealing resin at the fourth corner portion.

2. The semiconductor device according to claim 1, wherein the width of said first island portion in said first direction is smaller than the width of said second island portion in said first direction.

3. The semiconductor device described in claim 2, wherein the first lead includes a first main surface facing a first side in a third direction perpendicular to the first direction and the second direction and on which the first semiconductor element is mounted, a first back surface facing a second side in the third direction, a first thick portion overlapping the first main surface and the first back surface when viewed in the third direction, and a first thin portion overlapping the first main surface but not the first back surface when viewed in the third direction.

4. The semiconductor device according to claim 3, wherein the first lead includes a fifth extension portion located on the second side in the first direction with respect to the first extension portion and exposed from the third resin surface.

5. The semiconductor device described in claim 4, wherein the fifth extension portion includes a base portion connected to the first island portion, a first branch portion connected to the base and exposed from the third resin surface, and a second branch portion located away from the first branch portion on a second side in the first direction, connected to the base, and exposed from the third resin surface.

6. The semiconductor device according to claim 5, wherein said first branch portion is constituted by a part of said first thick portion and a part of said first thin portion.

7. The semiconductor device according to claim 6, wherein said second branch portion is constituted solely by said first thin portion.

8. A semiconductor device according to any one of claims 5 to 7, wherein the width in the first direction of the base is greater than the width in the first direction of a portion of the first rear surface that overlaps with the first island portion when viewed in the third direction.

9. A semiconductor device as described in any one of claims 4 to 8, wherein the second lead includes a second main surface facing a first side in the third direction and on which the second semiconductor element is mounted, a second back surface facing the second side in the third direction, a second thick portion overlapping the second main surface and the second back surface when viewed in the third direction, and a second thin portion overlapping the second main surface but not the second back surface when viewed in the third direction.

10. The semiconductor device according to claim 9, wherein the second lead includes a sixth extension portion located on the first side in the first direction relative to the third extension portion and exposed from the third resin surface.

11. The semiconductor device according to claim 10, wherein the sixth extension portion is constituted solely by the second thin portion.

12. The semiconductor device according to claim 10 or 11, wherein the width of the sixth extension portion in the first direction is smaller than the width of the fifth extension portion in the first direction.

13. The semiconductor device according to any one of claims 10 to 12, further comprising a third lead located between the fifth extension portion and the sixth extension portion in the first direction and spaced apart from the first lead and the second lead.

14. The semiconductor device described in claim 13, wherein the third lead includes a third main surface facing a first side in the third direction, a third back surface facing a second side in the third direction, a third thick portion overlapping the third main surface and the third back surface when viewed in the third direction, and a third thin portion overlapping the third main surface but not the third back surface when viewed in the third direction.

15. The semiconductor device described in claim 14, further comprising a fourth lead located on the second side in the first direction with respect to the sixth extension portion and spaced apart from the second lead, wherein the length in the second direction of at least the portion of the third lead on the first side in the first direction is shorter than the length in the second direction of the fourth lead.

16. The semiconductor device according to claim 15, wherein the length of said sixth extension portion in said second direction is shorter than the length of said fourth lead in said second direction.

17. The semiconductor device according to claim 15 or 16, wherein the tip of the sixth extension portion on the second side in the second direction is formed by the second thick portion.

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