Processing system and processing method

Abstract

Provided is a processing system for regenerating a carrier that has a structure in which a base material and a holding layer are laminated, and is capable of holding a die by using the holding layer, the system including a thermal processing device that heats and regenerates the holding layer, which has thermoplasticity.

Description

Processing system and processing method

[0001] The present disclosure relates to a processing system and a processing method.

[0002] Patent Document 1 discloses a chip-on-wafer bonding method for mounting chips on a wafer, in which a surface activation process and a hydrophilization process are performed on the chips, a surface activation process and a hydrophilization process are performed on the substrate, and then multiple chips are bonded to the substrate.

[0003] Patent No. 6337400

[0004] The technology disclosed herein effectively utilizes a carrier when mounting a die held by the carrier onto a target substrate in a die-on process manufacturing process.

[0005] One aspect of the present disclosure is a processing system for regenerating a carrier having a laminated structure of a substrate and a retaining layer, the retaining layer being capable of holding a die, the processing system including a heat treatment device for heating the thermoplastic retaining layer to regenerate the carrier.

[0006] According to the present disclosure, when a die held by a carrier is mounted on a target substrate in a die-on process manufacturing process, the carrier can be effectively utilized.

[0007] 1 is a plan view showing an outline of the configuration of a wafer on which a plurality of types of dies are mounted; FIG. 2 is a cross-sectional view showing an outline of the configuration of a dicing tape and a dicing frame to which dies are attached; FIG. 3 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die; FIG. 4 is a cross-sectional view showing an outline of the configuration of a first carrier that holds a first die; FIG. 5 is a cross-sectional view showing an outline of the configuration of a second carrier that holds a second die; FIG. 6 is a plan view showing an outline of the configuration of a processing system; FIG. 7 is a flow diagram showing main steps of a die-on wafer manufacturing process; FIG. 8 is an explanatory view schematically showing some steps of a die-on wafer manufacturing process; FIG. 9 is an explanatory view showing how dies are attached to and detached from a carrier; FIG. 10 is a flow diagram showing main steps of a carrier recycling process and reuse process; FIG. 11 is an explanatory view showing how a retention layer is regenerated in a heat treatment device; FIG. 12 is an explanatory view showing how an old retention layer is removed in a retention layer removal device; FIG. 13 is an explanatory view showing how a new retention layer is bonded in a retention layer bonding device; FIG. 14 is an explanatory view showing how a retention layer is regenerated in a heat treatment device according to another embodiment; FIG. 15 is an explanatory view showing how a retention layer is regenerated in a heat treatment device according to another embodiment. Fig. 10 is an explanatory view showing the state of removing an old retention layer in a retention layer removal device according to another embodiment; Fig. 11 is an explanatory view showing the state of removing an old retention layer in a retention layer removal device according to another embodiment; Fig. 12 is an explanatory view showing the state of removing an old retention layer in a retention layer removal device according to another embodiment; Fig. 13 is an explanatory view showing the state of removing an old retention layer in a retention layer removal device according to another embodiment; Fig. 14 is an explanatory view showing the state of joining a new retention layer in a retention layer laminating device according to another embodiment.

[0008] In recent years, in the manufacturing process of semiconductor devices, in response to demands for even higher performance and higher density of devices, a chip-on-wafer (CoW) manufacturing process has been studied as one method of three-dimensional packaging technology. Chip-on-wafer manufacturing is carried out by a method disclosed in Patent Document 1, for example.

[0009] In a chip-on-wafer manufacturing process (hereinafter referred to as a "die-on-wafer manufacturing process"), as disclosed in Patent Document 1, a series of processes, including a surface activation process and a hydrophilization process, are required for a semiconductor chip (hereinafter referred to as a "die") before the die is actually mounted on a semiconductor substrate (hereinafter referred to as a "wafer"). These processes are performed on the die while the die is placed on a dicing tape fixed to a dicing frame, for example. However, if the processes are performed in this state, the dicing tape on which the die is placed may be damaged, making the dicing tape unreusable.

[0010] Therefore, the inventors have conducted extensive research and discovered that, instead of performing the above series of processes on dies on dicing tape in the die-on-wafer manufacturing process, the above series of processes can be performed while the dies are held by a carrier of approximately the same shape as the wafer, which can reduce the damage to the carrier that is caused to the dicing tape as described above.

[0011] The carrier has a structure in which, for example, a substrate and a holding layer are laminated. The holding layer holds the die, and the above series of processes are performed on the die held by the holding layer. In addition, multiple through holes are formed in the substrate, and air is supplied to the through holes to detach the die from the holding layer. The die detached from the holding layer in this way is then picked up from the carrier and bonded to the wafer.

[0012] However, repeated use of the carrier to load and unload dies multiple times can cause the support layer to plastically deform and stretch. Conventionally, when the support layer becomes unable to properly load and unload dies due to plastic deformation, the carrier is discarded, which is uneconomical. Therefore, there is room for improvement in the conventional die-on-wafer manufacturing process.

[0013] The technology disclosed herein effectively utilizes a carrier when mounting a die held by the carrier onto a target substrate in a die-on process manufacturing process. Hereinafter, a processing system and a processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0014] In this embodiment, as shown in FIG. 1, multiple types of dies D1 and D2 are mounted on a wafer W as a target substrate. Specifically, first, multiple first dies D1 held on a first dicing tape T1 as shown in FIG. 2 are placed on a first carrier C1 as shown in FIGS. 3 and 4 to prepare a first carrier C1 for holding the multiple first dies D1. Furthermore, multiple second dies D2 held on a second dicing tape T2 as shown in FIG. 2 are placed on a second carrier C2 as shown in FIGS. 5 and 6 to prepare a second carrier C2 for holding the multiple second dies D2. Next, the multiple first dies D1 held on the first carrier C1 and the multiple second dies D2 held on the second carrier C2 are bonded to the wafer W as a target for mounting.

[0015] 1, the wafer W on which the first die D1 and the second die D2 are mounted is a semiconductor wafer such as a silicon substrate or a glass substrate used in the manufacturing process of semiconductor devices. For example, the diameter of the wafer W is 300 mm and the thickness is approximately 800 μm. The surface of the wafer W on which the first die D1 and the second die D2 are mounted is referred to as the front surface Wa, and the surface opposite to the front surface Wa is referred to as the back surface Wb.

[0016] The number and arrangement of the first die D1 and the second die D2 to be mounted on the front surface Wa of the wafer W are set to a desired pattern. A device layer (not shown) may be formed on the front surface Wa. This device layer is formed to correspond to a device layer E of the first die D1, which will be described later.

[0017] 2, the first dicing frame F1 has an annular shape, and the first dicing tape T1 is fixed to the back surface of the first dicing frame F1. The surface of the first dicing tape T1 is adhesive, and a plurality of first dies D1 are held on the surface (adhesive surface) of the first dicing tape T1. The second dicing frame F2 and the second dicing tape T2 have the same configuration as the first dicing frame F1 and the first dicing tape T1, respectively, and a plurality of second dies D2 are held on the surface of the second dicing tape T2.

[0018] 2 and 3, the first die D1 has a configuration in which, for example, a silicon layer S1 and a device layer E are stacked. A circuit is formed in the device layer E. As will be described later, when the first die D1 is bonded to the wafer W, high bonding accuracy is required of the first die D1, i.e., the first die D1 is a high-precision die. Note that the surface of the first die D1 on which the device layer E is formed is referred to as the front surface D1a, and the surface opposite to the front surface D1a is referred to as the back surface D1b.

[0019] 2 and 5, the second die D2 has a structure in which, for example, a silicon layer S2 and an oxide film G are stacked. No devices such as circuits are formed on the oxide film G. As will be described later, when the second die D2 is bonded to the wafer W, the bonding precision required for the second die D2 is low, i.e., the second die D2 is a low-precision die. Note that the surface of the second die D2 on which the oxide film G is formed is referred to as the front surface D2a, and the surface opposite to the front surface D2a is referred to as the back surface D2b.

[0020] As described above, the first die D1 and the second die D2 are different types of dies. The first die D1 has a circuit formed thereon, whereas the second die D2 does not. Therefore, the bonding accuracy required for the first die D1 is relatively high, while the bonding accuracy required for the second die D2 is relatively low. In addition, the shapes (size and thickness) of the first die D1 and the second die D2 are also different.

[0021] The first carrier C1 and the second carrier C2 have the same configuration. First, the configuration of the first carrier C1 will be described.

[0022] 3 and 4, the first carrier C1 has an upper surface that is an adsorption surface for holding a plurality of first dies D1 by electrostatic and vacuum adsorption. The first carrier C1 adsorbs and holds the silicon layer S1 on the back surface D1b side of the first die D1. The first carrier C1 has a configuration in which a substrate M1 and a holding layer N1 are stacked.

[0023] The substrate M1 has approximately the same diameter and thickness as the wafer W on which the first die D1 is mounted, e.g., a diameter of 300 mm and a thickness of approximately 800 μm. The substrate M1 is made of any conductive material, such as silicon, aluminum, an aluminum alloy, stainless steel, alumina, zirconia, SiC, or titanium. In other words, a silicon substrate may be used as the substrate M1. The substrate M1 may have approximately the same diameter as the wafer W on which the first die D1 is mounted, but may have a different thickness (e.g., 500 μm to 1000 μm) from the wafer W.

[0024] The substrate M1 has a plurality of through holes H1 formed therethrough in the thickness direction. The through holes H1 can be formed at any position on the suction surface of the first carrier C1. For example, the through holes H1 may be formed one for each of the first dies D1 held by the first carrier C1, in other words, the same number as the number of first dies D1 held by the first carrier C1. Alternatively, for example, the through holes H1 may be formed in a number corresponding to each of the first dies D1 held by the first carrier C1, in other words, a number greater than the number of first dies D1 held by the first carrier C1.

[0025] Although the number, size, spacing, and arrangement of the through holes H1 are not particularly limited, it is desirable to determine the number, size, and spacing so as to ensure the strength (rigidity) of the first carrier C1 so that deformation such as bending does not occur. For example, the diameter of the through holes H1 is 0.5 mm to 5.0 mm, and the spacing (the center-to-center distance between adjacent through holes H1) is 0.5 mm to 5.0 mm.

[0026] The holding layer N1 is a layer formed on the surface of the substrate M1 and constitutes an adsorption surface for the first die D1 on the first carrier C1. The holding layer N1 has no through-holes and covers the surface of the substrate M1. The holding layer N1 has a thickness that is sufficient to hold the first die D1 on the first carrier C1 by electrostatic adsorption, for example, several tens of μm.

[0027] The retaining layer N1 is made of a thermoplastic, flexible, and insulating material, such as polyimide or EVA (ethylene-vinyl acetate copolymer). In this embodiment, "the retaining layer N1 is thermoplastic" means that the retaining layer N1 flows, softens, and can be reshaped at a predetermined temperature, such as 80°C. Furthermore, "the retaining layer N1 is flexible" means that the elastic modulus of the retaining layer N1 on the substrate M1 is 2 GPa or less, preferably 0.5 GPa or less. Furthermore, "the retaining layer N1 is insulating" means that the breakdown voltage of the retaining layer N1 on the substrate M1 is 30 kV or more, preferably 40 kV or more.

[0028] 5 and 6, the second carrier C2 has the same configuration as the first carrier C1, as described above, and is configured by stacking a substrate M2 and a support layer N2. The configurations of the substrate M2 and the support layer N2 are the same as those of the substrate M1 and the support layer N1, respectively. The substrate M2 has a plurality of through holes H2 formed therethrough in the thickness direction. Because the second die D2 held by the second carrier C2 is a different type from the first die D1, the number, size, spacing, and arrangement of the through holes H2 may be different from those of the through holes H1 of the first carrier C1.

[0029] The first carrier C1 in this embodiment is configured as described above, and attracts and holds the first die D1 on its attracting surface by generating an electrostatic (Coulomb) force between the first carrier C1 and the first die D1. Similarly, the second carrier C2 attracts and holds the second die D2 on its attracting surface by generating an electrostatic (Coulomb) force between the second carrier C2 and the second die D2.

[0030] In this embodiment, the first carrier C1 has a holding layer N1 made of a flexible material with a small elastic modulus. After the first die D1 is placed on the first carrier C1, a gap is formed between the first die D1 and the holding layer N1 before the first die D1 is electrostatically attracted and held. Due to the flexibility of the holding layer N1, when the first die D1 is electrostatically attracted to the holding layer N1, air escapes between the first die D1 and the holding layer N1, creating a pseudo-vacuum between the first die D1 and the holding layer N1. As a result, in addition to the electrostatic attraction between the first carrier C1 and the first die D1, a vacuum attraction force is generated due to the pseudo-vacuum state, creating a strong holding state using both the electrostatic attraction and the vacuum attraction. Similarly, the second carrier C2 attracts and holds the second die D2 using both the electrostatic attraction and the vacuum attraction.

[0031] The method of holding the dies D1 and D2 by the carriers C1 and C2 is not limited to this embodiment. For example, the dies D1 and D2 may be pressed against the carriers C1 and C2 to be pressure-bonded. In this case, by pressing the dies D1 and D2 against the carriers C1 and C2, air is removed from between the dies D1 and D2 and the holding layers N1 and N2, creating a vacuum suction force between the dies D1 and D2 and the holding layers N1 and N2, thereby adsorbing and holding the dies D1 and D2 to the carriers C1 and C2. The holding layers N1 and N2 may be heated when pressing the dies D1 and D2 against the carriers C1 and C2. In this case, since the holding layers N1 and N2 have thermoplasticity, the holding layers N1 and N2 soften, making it easier for the dies D1 and D2 to be adsorbed and held by the carriers C1 and C2. The materials of the substrates M1 and M2 in the carriers C1 and C2 do not need to be conductive and may be any material. Furthermore, the material of the support layers N1 and N2 is not necessarily insulating and may be any material as long as it has thermoplasticity and flexibility.

[0032] Furthermore, for example, adhesive sheets may be used for the holding layers N1 and N2 of the carriers C1 and C2. In such a case, adhesive force is generated between the dies D1 and D2 and the holding layers N1 and N2, thereby holding the dies D1 and D2 on the carriers C1 and C2. Alternatively, thermal release sheets may be used for the holding layers N1 and N2. The thermal release sheet is a sheet that has adhesive force at room temperature but is released when heated. As will be described later, when the dies D1 and D2 are bonded to the wafer W, the dies D1 and D2 are released from the carriers C1 and C2. At this time, heating the holding layers N1 and N2 can make it easier to release the dies D1 and D2.

[0033] Next, the processing system 1 according to this embodiment will be described. FIG.

[0034] 7 , the processing system 1 includes a carrier preparation processing system 2, a mounting processing system 3, a carrier reclamation processing system 4, and a carrier reuse processing system 5. The carrier preparation processing system 2 prepares carriers C1 and C2 that hold multiple dies D1 and D2. The mounting processing system 3 mounts multiple first dies D1 held in a first carrier C1 prepared in the carrier preparation processing system 2 and multiple second dies D2 held in a second carrier C2 prepared in the carrier preparation processing system 2 onto a wafer W. The carrier reclamation processing system 4 regenerates the retention layers N1 and N2 of the carriers C1 and C2 after multiple uses. The carrier reuse processing system 5 replaces the retention layers N1 and N2 of the carriers C1 and C2 after multiple uses, and reuses the substrates M1 and M2.

[0035] The carrier preparation processing system 2 has a configuration in which a FOUP mounting table 10, a transport device 20, and a die placement device 30 are integrally connected. Note that the number and arrangement of the die placement devices 30 are not limited to those in this embodiment, and can be determined arbitrarily.

[0036] FOUPs Ff1, Ff2, Fc1, and Fc2, each capable of accommodating a plurality of first dicing frames F1, a plurality of second dicing frames F2, a plurality of first carriers C1, and a plurality of second carriers C2, are loaded and unloaded from the FOUP platform 10, for example, to and from the outside. In the illustrated example, a plurality of FOUPs, for example, one each of FOUPs Ff1, Ff2, Fc1, and Fc2, are placed on the FOUP platform 10, aligned in a line in the Y-axis direction. Note that the number and arrangement of FOUPs Ff1, Ff2, Fc1, and Fc2 placed on the FOUP platform 10 are not limited to those in this embodiment and can be determined arbitrarily.

[0037] The transfer device 20 is provided adjacent to the FOUP mounting table 10 on the positive side of the X-axis of the FOUP mounting table 10. The transfer device 20 is configured to be movable on a transfer path 21 extending in the Y-axis direction. The transfer device 20 also has, for example, two transfer arms 22, 22 that hold and transfer the first dicing frame F1, the second dicing frame F2, the first carrier C1, and the second carrier C2. Each transfer arm 22 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arms 22 is not limited to this embodiment and may have any configuration. The transfer device 20 is configured to be able to transfer the first dicing frame F1, the second dicing frame F2, the first carrier C1, and the second carrier C2 to and from the FOUPs Ff1, Ff2, Fc1, and Fc2 on the FOUP mounting table 10 and the die placement device 30.

[0038] The die placement device 30 is provided adjacent to the transfer device 20 on the positive side of the X-axis of the transfer device 20. In the die placement device 30, the dies D1 and D2, which are held by dicing tapes T1 and T2 with their back surfaces D1b and D2b attached, are picked up by a collet as shown in FIG. 2. Next, as shown in FIGS. 3 and 5, the dies D1 and D2 held by the collets are placed in carriers C1 and C2 with their front surfaces D1a and D2a facing upward. This transfer of the dies D1 and D2 from the dicing tapes T1 and T2 to the carriers C1 and C2 is repeated until a plurality of dies D1 and D2 are arranged side by side on the carriers C1 and C2.

[0039] The mounting processing system 3 has a configuration in which a carry-in / out station 40 and a processing station 41 are integrally connected. In the carry-in / out station 40, for example, FOUPs Fw, Fc1, and Fc2, each capable of accommodating a plurality of wafers W, a plurality of first carriers C1, and a plurality of second carriers C2, are respectively carried in and out between the station 40 and the outside. The processing station 41 has, for example, three processing blocks 42 to 44, which will be described later, and is equipped with various processing devices for performing a series of processes.

[0040] The loading / unloading station 40 is provided with a FOUP mounting table 50. In the illustrated example, a plurality of FOUPs, for example, two FOUPs Fw, one FOUP Fc1, and one FOUP Fc2, are placed on the FOUP mounting table 50, lined up in the Y-axis direction. Note that the number and arrangement of the FOUPs Fw, Fc1, and Fc2 placed on the FOUP mounting table 50 are not limited to those in this embodiment and can be determined arbitrarily.

[0041] A transfer device 60 is provided adjacent to the FOUP mounting table 50 on the positive side of the X-axis. The transfer device 60 is configured to be movable on a transfer path 61 extending in the Y-axis direction. The transfer device 60 also has, for example, two transfer arms 62, 62 for holding and transferring the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 62 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transfer arm 62 is not limited to this embodiment and may have any configuration. The transfer device 60 is configured to transfer the wafer W, the first carrier C1, and the second carrier C2 to the FOUPs Fw, Fc1, and Fc2 on the FOUP mounting table 50, a transition device 80 (described later), and a buffer device 81 (described later).

[0042] The processing station 41 is provided with, for example, three processing blocks 42 to 44. The first processing block 42, the second processing block 43, and the third processing block 44 are arranged in this order from the negative side to the positive side of the X axis.

[0043] The first processing block 42 is provided with a transfer device 70, a transition device 80, a buffer device 81, an inspection device 90, a wafer modification device 91, a die modification device 92, a wafer cleaning device 93, a die surface device 94, a wafer hydrophilization device 95, and a die hydrophilization device 96. The number and arrangement of these various processing devices are not limited to those in this embodiment and can be determined as desired.

[0044] The transfer device 70 is configured to be movable on a transfer path 71 extending in the X-axis direction. The transfer device 70 also has, for example, two transfer arms 72, 72 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 72 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 80, 81, 90 to 96 in the first processing block 42, a transition device 110 described later, and a buffer device 111 described later.

[0045] The transition device 80 and the buffer device 81 are disposed on the negative side of the X-axis of the transport device 70. The transition device 80 and the buffer device 81 are stacked in this order vertically from the top. Note that a plurality of buffer devices 81 may be stacked.

[0046] The transition device 80 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 60 and the transfer device 70. The buffer device 81 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0047] The inspection device 90, wafer modification device 91, and die modification device 92 are arranged on the positive side of the Y axis of the transport device 70. The inspection device 90, wafer modification device 91, and die modification device 92 are stacked vertically in this order from the top. The wafer modification device 91 and die modification device 92 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0048] The inspection device 90 inspects a wafer W on which a first die D1 and a second die D2 are mounted. The inspection device 90 captures an image of the wafer W using, for example, an IR camera, and inspects for the presence or absence of voids between the surface Wa of the wafer W and the dies D1 and D2. The inspection device 90 may also inspect the positions of the dies D1 and D2 bonded to the surface Wa of the wafer W.

[0049] The wafer modifying apparatus 91 uses plasma to modify the surface Wa of the wafer W. In the wafer modifying apparatus 91, for example, under a reduced pressure atmosphere, a processing gas such as oxygen gas, nitrogen gas, hydrogen gas, or a mixture of these gases is excited to form plasma and ionized. The oxygen ions, nitrogen ions, or hydrogen ions are irradiated onto the surface Wa of the wafer W, and the surface Wa is subjected to plasma processing and modified.

[0050] Like the wafer modifying apparatus 91, the die modifying apparatus 92 also modifies the surfaces D1a, D2a of the dies D1, D2 using plasma. In the die modifying apparatus 92, for example, under a reduced pressure atmosphere, a process gas such as oxygen gas, nitrogen gas, hydrogen gas, or a mixture of these is excited to form plasma and ionized. The oxygen ions, nitrogen ions, or hydrogen ions are irradiated onto the surfaces D1a, D2a of the dies D1, D2 held by the carriers C1, C2, and the surfaces D1a, D2a are plasma-processed and modified.

[0051] The wafer cleaning device 93, die surface device 94, wafer hydrophilization device 95, and die hydrophilization device 96 are arranged on the negative side of the Y axis of the transfer device 70. The wafer cleaning device 93 and die surface device 94, and the wafer hydrophilization device 95 and die hydrophilization device 96 are stacked vertically from the top in this order. The wafer cleaning device 93 and die surface device 94 are arranged side by side in this order from the negative side to the positive side of the X axis. The wafer hydrophilization device 95 and die hydrophilization device 96 are arranged side by side in this order from the negative side to the positive side of the X axis.

[0052] The wafer cleaning device 93 cleans the front surface Wa of the wafer W. In the wafer cleaning device 93, while the wafer W held by, for example, a spin chuck is rotated, a cleaning liquid such as pure water, DI water, DHF, or IPA is supplied onto the wafer W. The supplied cleaning liquid then spreads over the front surface Wa of the wafer W, cleaning the front surface Wa.

[0053] The die surface device 94 also cleans the surfaces D1a and D2a of the dies D1 and D2, similarly to the wafer cleaning device 93. In the die surface device 94, a cleaning liquid is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by the chucks are rotated. The supplied cleaning liquid then spreads over the surfaces D1a and D2a of the dies D1 and D2, cleaning the surfaces D1a and D2a.

[0054] The wafer hydrophilization device 95 hydrophilizes and rinses the surface Wa of the wafer W. In the wafer hydrophilization device 95, pure water is supplied onto the wafer W while the wafer W held by, for example, a spin chuck is being rotated. The supplied pure water then spreads over the surface Wa of the wafer W, making the surface Wa hydrophilic. The surface Wa is also rinsed with the pure water.

[0055] Like the wafer hydrophilization apparatus 95, the die hydrophilization apparatus 96 hydrophilizes and rinses the surfaces D1a and D2a of the dies D1 and D2. In the die hydrophilization apparatus 96, a cleaning liquid is supplied onto the dies D1 and D2 held by the carriers C1 and C2 while the carriers C1 and C2 held by, for example, spin chucks are rotated. The supplied cleaning liquid then spreads over the surfaces D1a and D2a of the dies D1 and D2, hydrophilizing the surfaces D1a and D2a. The surfaces D1a and D2a are also rinsed with pure water.

[0056] The second processing block 43 is provided with a transport device 100, a transition device 110, a buffer device 111, and a first bonding device 120. The number and arrangement of these various processing devices are not limited to those in this embodiment and can be determined arbitrarily.

[0057] The transfer device 100 is configured to be movable on a transfer path 101 extending in the X-axis direction. The transfer device 100 also has, for example, two transfer arms 102, 102 that hold and transfer the wafer W, the first carrier C1, and the second carrier C2. Each transfer arm 102 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W, the first carrier C1, and the second carrier C2 to each of the devices 110, 111, 120 in the second processing block 43, a transition device 140 described later, and a buffer device 141 described later.

[0058] The transition device 110 and the buffer device 111 are disposed on the negative side of the X-axis of the transport device 100. The transition device 110 and the buffer device 111 are stacked in this order vertically from the top. Note that a plurality of buffer devices 111 may be stacked.

[0059] The transition device 110 transfers the wafers W, the first carrier C1, and the second carrier C2 between the transfer device 70 and the transfer device 100. The buffer device 111 temporarily stores the wafers W, the first carrier C1, and the second carrier C2.

[0060] For example, two first bonding devices 120 are arranged in the positive direction of the Y axis of the transfer device 100, and two are arranged in the negative direction of the Y axis of the transfer device 100. The first bonding devices 120 bond the first die D1 (high-precision die) held by the first carrier C1 to the wafer W. That is, high bonding precision is required of the first bonding devices 120 (hereinafter, such a bonding device may be referred to as a "high-precision bonding device").

[0061] In the first bonding device 120, air is supplied to the through-hole H1 of the first carrier C1 held by the carrier holding part to detach the first die D1 from the suction surface of the first carrier C1, and then the first die D1 on the first carrier C1 is picked up by a collet. Next, the first die D1 is transferred from the collet to the bond head, and the bond head is lowered to press and bond the first die D1 against the wafer W held by the wafer holding part.

[0062] The third processing block 44 is provided with a transport device 130, a transition device 140, a buffer device 141, and a second bonding device 150. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined arbitrarily.

[0063] The transfer device 130 is configured to be movable on a transfer path 131 extending in the X-axis direction. The transfer device 130 also has, for example, two transfer arms 132, 132 that hold and transfer the wafer W and the second carrier C2. Each transfer arm 132 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transfer the wafer W and the second carrier C2 to each of the devices 140, 141, and 150 in the third processing block 44.

[0064] The transition device 140 and the buffer device 141 are disposed on the negative side of the X-axis of the transport device 130. The transition device 140 and the buffer device 141 are stacked in this order vertically from the top. Note that a plurality of buffer devices 141 may be stacked.

[0065] The transition device 140 transfers the wafer W and the second carrier C2 between the transfer device 100 and the transfer device 130. The buffer device 141 temporarily stores the wafer W, the first carrier C1, and the second carrier C2.

[0066] For example, two second bonding devices 150 are arranged in the positive direction of the Y axis of the transfer device 130, and two are arranged in the negative direction of the Y axis of the transfer device 130. The second bonding devices 150 bond the second die D2 (low-precision die) held by the second carrier C2 to the wafer W. In other words, the bonding precision required of the second bonding devices 150 is low (hereinafter, such a bonding device may be referred to as a "low-precision bonding device").

[0067] In the second bonding device 150, air is supplied to the through-hole H2 of the second carrier C2 held by the carrier holding part to detach the second die D2 from the suction surface of the second carrier C2, and then the second die D2 on the second carrier C2 is picked up by a collet. Next, the second die D2 is transferred from the collet to the bond head, and the bond head is lowered to press and bond the second die D2 against the wafer W held by the wafer holding part.

[0068] The first bonding apparatus 120, which is a high-precision bonding apparatus, and the second bonding apparatus 150, which is a low-precision bonding apparatus, have different precision specifications for their apparatus configurations and different bonding condition specifications. The apparatus configurations with different precision specifications are, for example, various moving mechanisms and alignment mechanisms (position adjustment mechanisms), with the first bonding apparatus 120 having high precision and the second bonding apparatus 150 having low precision. The bonding conditions with different specifications are conditions for bonding the dies D1 and D2 to the wafer W, and are apparatus parameters. The apparatus parameters include, for example, the acceleration / deceleration and speed of the various moving mechanisms, and the waiting time until the drive of the drive units of the various moving mechanisms stabilizes. The apparatus parameters also include whether alignment (position adjustment) is required and the time required for alignment.

[0069] The carrier regeneration system 4 has a configuration in which a FOUP mounting table 160, a transport device 170, and a heat treatment device 180 are integrally connected. The number and arrangement of the heat treatment devices 180 are not limited to those in this embodiment, and can be determined arbitrarily.

[0070] FOUPs Fc1 and Fc2, each of which can accommodate a plurality of first carriers C1 and a plurality of second carriers C2, are loaded and unloaded from the FOUP platform 160, for example, to and from the outside. In the illustrated example, a plurality of FOUPs, for example, two FOUPs Fc1 and two FOUPs Fc2, are placed on the FOUP platform 160, aligned in a line in the Y-axis direction. Note that the number and arrangement of FOUPs Fc1 and Fc2 placed on the FOUP platform 160 are not limited to those in this embodiment and can be determined arbitrarily.

[0071] The transport device 170 is provided adjacent to the FOUP mounting table 160 on the positive side of the X-axis of the FOUP mounting table 160. The transport device 170 is configured to be movable on a transport path 171 extending in the Y-axis direction. The transport device 170 also has, for example, two transport arms 172, 172 that hold and transport the first carrier C1 and the second carrier C2. Each transport arm 172 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transport arms 172 is not limited to this embodiment and may have any configuration. The transport device 170 is configured to transport the first carrier C1 and the second carrier C2 to and from the FOUPs Fc1 and Fc2 on the FOUP mounting table 160 and the heat treatment device 180.

[0072] The heat treatment device 180 is provided adjacent to the transport device 170 on the positive side of the X-axis of the transport device 170. The heat treatment device 180 heats and regenerates the retention layers N1 and N2 of the carriers C1 and C2 after the carriers C1 and C2 have been used multiple times. The configuration of the heat treatment device 180 will be described in detail later.

[0073] The carrier reuse processing system 5 has a configuration in which a carry-in / out station 190 and a processing station 191 are integrally connected. FOUPs Fc1 and Fc2, each capable of accommodating a plurality of first carriers C1 and a plurality of second carriers C2, are carried in and out of the carry-in / out station 190, for example, between the outside and the system. The processing station 191 is equipped with various processing devices for implementing a series of processes described below.

[0074] The carry-in / out station 190 is provided with a FOUP mounting table 200. In the illustrated example, a plurality of FOUPs, for example, two FOUPs Fc1 and two FOUPs Fc2, are placed on the FOUP mounting table 200, aligned in a line in the Y-axis direction. Note that the number and arrangement of FOUPs Fc1 and Fc2 placed on the FOUP mounting table 200 are not limited to those in this embodiment and can be determined arbitrarily.

[0075] A transport device 210 is provided adjacent to the FOUP platform 200 on the positive side of the X-axis. The transport device 210 is configured to be movable on a transport path 211 extending in the Y-axis direction. The transport device 210 also has, for example, two transport arms 212, 212 that hold and transport the first carrier C1 and the second carrier C2. Each transport arm 212 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. Note that the configuration of the transport arms 212 is not limited to this embodiment and may have any configuration. The transport device 210 is configured to transport the first carrier C1 and the second carrier C2 to and from the FOUPs Fc1 and Fc2 on the FOUP platform 200, a transition device 230 (described later), and a buffer device 231 (described later).

[0076] The processing station 191 is provided with a transport device 220, a transition device 230, a buffer device 231, a support layer removal device 240, a substrate cleaning device 241, and a support layer bonding device 242. The number and arrangement of these various processing devices are not limited to this embodiment and can be determined as desired.

[0077] The transport device 220 is configured to be movable on a transport path 221 extending in the X-axis direction. The transport device 220 also has, for example, two transport arms 222, 222 that hold and transport the first carrier C1 and the second carrier C2. Each transport arm 222 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis, and is configured to be able to transport the first carrier C1 and the second carrier C2 to each of the devices 230, 231, 240 to 242 in the processing station 191.

[0078] The transition device 230 and the buffer device 231 are disposed on the negative X-axis side of the transport device 220. The transition device 230 and the buffer device 231 are stacked in this order vertically from the top. Note that a plurality of buffer devices 231 may be stacked.

[0079] The transition device 230 transfers the first carrier C1 and the second carrier C2 between the transport device 210 and the transport device 220. The buffer device 231 temporarily stores the first carrier C1 and the second carrier C2.

[0080] The retention layer removal device 240 and the substrate cleaning device 241 are arranged side by side in this order from the negative side to the positive side of the X axis on the positive side of the Y axis of the conveyance device 210. The retention layer bonding device 242 is arranged on the negative side of the Y axis of the conveyance device 210.

[0081] The retention layer removal device 240 removes the retention layers N1 and N2 of the carriers C1 and C2 from the substrates M1 and M2 after the carriers C1 and C2 have been used multiple times. The configuration of the retention layer removal device 240 will be described in detail later.

[0082] The substrate cleaning device 241 cleans the surfaces of the substrates M1 and M2 after the retention layers N1 and N2 have been removed in the carriers C1 and C2. In the substrate cleaning device 241, while the substrates M1 and M2 held by, for example, a spin chuck are rotated, a cleaning liquid such as an organic solvent, pure water, or SPM (a mixture of sulfuric acid and hydrogen peroxide) is supplied onto the substrates M1 and M2. The supplied cleaning liquid then diffuses over the surfaces of the substrates M1 and M2, cleaning the surfaces.

[0083] The support layer laminating device 242 forms support layers N1 and N2 on the surfaces of the substrates M1 and M2 in the carriers C1 and C2. The configuration of the support layer laminating device 242 will be described in detail later.

[0084] Each of the above processing systems 1 (the carrier preparation processing system 2, the mounting processing system 3, the carrier reclaiming processing system 4, and the carrier reuse processing system 5) is provided with at least one control device 250. The control device 250 processes computer-executable instructions that cause the processing system 1 to perform the various processes described in this disclosure. The control device 250 may be configured to control each element of the processing system 1 to perform the various processes described herein. In one embodiment, some or all of the control device 250 may be included in the processing system 1. The control device 250 may include a processing unit, a storage unit, and a communication interface. The control device 250 is realized, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing system 1 via a communication line such as a LAN (Local Area Network).

[0085] Although the processing system 1 according to this embodiment is configured as described above, the configuration of the processing system 1 is not limited to this. For example, at least some of the processing devices in the carrier preparation processing system 2, the mounting processing system 3, the carrier regeneration processing system 4, and the carrier reuse processing system 5 may be combined into an integrated configuration. Furthermore, for example, other processing devices may be further disposed in each of the carrier preparation processing system 2, the mounting processing system 3, the carrier regeneration processing system 4, and the carrier reuse processing system 5 depending on the purpose. Alternatively, some of the processing devices may be disposed outside the carrier preparation processing system 2, the mounting processing system 3, the carrier regeneration processing system 4, and the carrier reuse processing system 5 depending on the purpose.

[0086] Next, a description will be given of a die-ion wafer manufacturing process performed in the processing system 1 configured as described above. Fig. 8 is a flow diagram showing the main steps of the die-ion wafer manufacturing process. Fig. 9 is an explanatory diagram schematically showing some steps of the die-ion wafer manufacturing process.

[0087] First, we will explain the processing in the carrier preparation processing system 2. In the carrier preparation processing system 2, a first carrier C1 that holds a plurality of first dies D1 is prepared, and a second carrier C2 that holds a plurality of second dies D2 is prepared.

[0088] First, the hoops Ff1 and Fc1, each housing a first dicing frame F1 and a first carrier C1, are placed on the hoop mounting table 10. At this time, as shown in Fig. 9(a), a plurality of first dies D1 are held on the first dicing tape T1, and the first dicing tape T1 is housed with its surface (first dies D1) facing upward. The first carrier C1 is also housed with its surface (holding layer N1) facing upward.

[0089] Next, the transfer device 20 removes the first dicing frame F1 from the FOUP Ff1 and transfers it to the die placement device 30. The transfer device 20 also removes the first carrier C1 from the FOUP Fc1 and transfers it to the die placement device 30. In the die placement device 30, the first die D1 held on the first dicing tape T1 is picked up by a collet (not shown) as shown in FIG. 9A, and the first die D1 is placed on the first carrier C1 with the front surface (device layer E) facing up. This transfer of the first die D1 from the first dicing tape T1 to the first carrier C1 is repeated, and multiple first dies D1 are placed side by side on the first carrier C1 as shown in FIG. 9B (St11 in FIG. 8).

[0090] In Step St11, power is supplied to the first carrier C1 from, for example, an electrode supply unit (not shown) to positively charge the substrate M1, and then the positive charge on the surface of the first die D1 is removed using, for example, a charge removal unit (not shown). A potential difference is generated between the substrate M1 of the first carrier C1 and the first die D1 across the holding layer N1, generating an electrostatic force that attracts them to each other, and the first die D1 is electrostatically attracted to the attraction surface of the first carrier C1. Furthermore, as described above, the flexibility of the holding layer N1 allows air to escape between the first die D1 and the holding layer N1, generating a vacuum suction force. In this way, the first die D1 is attracted and held to the first carrier C1 using both the electrostatic and vacuum suction forces.

[0091] Next, the first carrier C1 is transported to the FOUP Fc1 by the transport device 20. In this way, the processing in the carrier preparation processing system 2 is completed, and the first carrier C1 holding the plurality of first dies D1 is prepared.

[0092] The FOUP from which the first carrier C1 is retrieved does not necessarily have to be the same FOUP that housed the first carrier C1 when it was brought in. That is, for example, the FOUPs that housed the first carrier C1 may each carry out different components, or a new FOUP or the like for carrying out the first carrier C1 may have been brought into the carrier preparation processing system 2.

[0093] Similarly, in the carrier preparation processing system 2, the second die D2 held on the second dicing tape T2 is transferred to the second carrier C2 as shown in Fig. 9(c), and a plurality of second dies D2 are arranged in the second carrier C2 as shown in Fig. 9(d) (St12 in Fig. 8). Then, the second carrier C2 holding the plurality of second dies D2 is prepared.

[0094] Next, a description will be given of the processing in the mounting processing system 3. In the mounting processing system 3, a plurality of first dies D1 held in a first carrier C1 prepared in the carrier preparation processing system 2 and a plurality of second dies D2 held in a second carrier C2 prepared in the carrier preparation processing system 2 are mounted on a wafer W.

[0095] First, FOUPs Fw, Fc1, and Fc2, each containing a plurality of wafers W, a first carrier C1, and a second carrier C2, are placed on the FOUP mounting table 50 of the carry-in / out station 40. At this time, a plurality of first dies D1 are held in the first carrier C1 as shown in FIG. 9( b), and a plurality of second dies D2 are held in the second carrier C2 as shown in FIG. 9( d). The first carrier C1 is stored with its front surface (first die D1) facing upward, and the second carrier C2 is stored with its front surface (second die D2) facing upward. As described above, the first die D1 is a high-precision die, and the second die D2 is a low-precision die.

[0096] Next, the transfer device 60 removes the wafer W from the FOUP Fw and transfers it to the transition device 80. The wafer W transferred to the transition device 80 is then transferred by the transfer device 70 to the wafer cleaning device 93. In the wafer cleaning device 93, the front surface Wa of the wafer W is cleaned with, for example, a cleaning liquid (St21 in FIG. 8 ).

[0097] Next, the wafer W is transferred by the transfer device 70 to the wafer modifying device 91. In the wafer modifying device 91, for example, plasma processing is performed under a reduced pressure atmosphere, and the surface Wa of the wafer W is modified (St22 in FIG. 8).

[0098] Next, the wafer W is transferred by the transfer device 70 to the wafer hydrophilization device 95. In the wafer hydrophilization device 95, hydroxyl groups (silanol groups) are attached to the surface Wa of the wafer W modified in St22 by, for example, pure water, thereby making the surface Wa hydrophilic. The surface Wa is also rinsed with the pure water (St23 in FIG. 8 ).

[0099] Next, the wafer W is transferred by the transfer device 70 to the transition device 110, and further transferred by the transfer device 100 to the first bonding device 120. Note that if the bonding process has already been performed in the four first bonding devices 120, the wafer W is transferred to the buffer device 111 and temporarily stored in the buffer device 111.

[0100] While the wafer W is being processed in the above-described steps St21 to St23, the first die D1 held in the first carrier C1 is also processed. First, the transfer device 60 removes the first carrier C1 from the FOUP Fc1 and transfers it to the transition device 80. The first carrier C1 transferred to the transition device 80 is then transferred by the transfer device 70 to the die surface device 94. In the die surface device 94, the surface D1a of the first die D1 is cleaned with, for example, a cleaning solution (St24 in FIG. 8 ).

[0101] Next, the first carrier C1 is transported by the transport device 70 to the die modifying device 92. In the die modifying device 92, for example, plasma processing is performed under a reduced pressure atmosphere to modify the surface D1a of the first die D1 (St25 in FIG. 8).

[0102] Next, the first carrier C1 is transported by the transport device 70 to the die hydrophilization device 96. In the die hydrophilization device 96, hydroxyl groups (silanol groups) are attached to the surface D1a of the first die D1 modified in St25 using, for example, pure water, thereby hydrophilizing the surface D1a. The surface D1a is also rinsed with the pure water (St26 in FIG. 8 ).

[0103] Next, the first carrier C1 is transported by the transport device 70 to the transition device 110, and further transported by the transport device 100 to the first joining device 120. Note that if the joining process has already been performed in the four first joining devices 120, the first carrier C1 is transported to the buffer device 111 and temporarily stored therein.

[0104] While the wafer W is subjected to the processes in St21 to St23 described above and the first die D1 is subjected to the processes in St24 to St26 described above, the second die D2 held in the second carrier C2 is processed. First, the transfer device 60 removes the second carrier C2 from the FOUP Fc2 and transfers it to the transition device 80. The second carrier C2 transferred to the transition device 80 is then transferred by the transfer device 70 to the die surface device 94. In the die surface device 94, the surface D2a of the second die D2 is cleaned, for example, with a cleaning solution (St27 in FIG. 8 ).

[0105] Next, the second carrier C2 is transported by the transport device 70 to the die modifying device 92. In the die modifying device 92, for example, plasma processing is performed under a reduced pressure atmosphere to modify the surface D2a of the second die D2 (St28 in FIG. 8).

[0106] Next, the second carrier C2 is transported by the transport device 70 to the die hydrophilization device 96. In the die hydrophilization device 96, hydroxyl groups (silanol groups) are attached to the surface D2a of the second die D2 modified in St28 by, for example, pure water, thereby hydrophilizing the surface D2a. The surface D2a is also rinsed with the pure water (St29 in FIG. 8 ).

[0107] Next, the second carrier C2 is transported by the transport device 70 to the transition device 110, then by the transport device 100 to the transition device 140, and then by the transport device 130 to the second joining device 150. Note that if the joining process has already been performed in the four second joining devices 150, the second carrier C2 is transported to the buffer device 141 and temporarily stored therein.

[0108] The wafer W having undergone the processes of St21 to St23 described above is transferred to the first bonding apparatus 120, and the first carrier C1 having undergone the processes of St24 to St26 described above is transferred to the first bonding apparatus 120. In the first bonding apparatus 120, air is supplied to the through-hole H1 of the first carrier C1 to detach the first die D1 from the suction surface of the first carrier C1 and pick it up. Furthermore, as shown in FIG. 9( e), the surface D1 a of the picked-up first die D1 is brought into contact with the surface Wa of the wafer W, and the first die D1 is pressed against the wafer W, thereby bonding the first die D1 to the wafer W (St30 in FIG. 8 ).

[0109] In St30, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been modified in St22 and St25, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D1a, thereby bonding the surfaces Wa and D1a together. Furthermore, because the surface Wa of the wafer W and the surface D1a of the first die D1 have been hydrophilized in St23 and St26, respectively, the hydrophilic groups between the surfaces Wa and D1a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D1a together.

[0110] As described above, the first bonding apparatus 120 is a high-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and high bonding precision is required. In St30, the first die D1 can be bonded to a desired position on the wafer W with high precision.

[0111] In St30, when all the first dies D1 held in the first carrier C1 are bonded to the wafers W, the first carrier C1 is transferred to the transition device 110 by the transfer device 100, transferred to the transition device 80 by the transfer device 70, and further transferred to the FOUP Fc1 by the transfer device 60. On the other hand, if the first die D1 remains in the first carrier C1 after St30, the first carrier C1 may remain in the first bonding device 120, and the first die D1 may be bonded to the subsequent wafer W. Alternatively, if the first die D1 remains in the first carrier C1 after St30, the first carrier C1 may be transferred to the buffer device 111 by the transfer device 100 and temporarily stored in the buffer device 111.

[0112] On the other hand, in St30, when the first die D1 is bonded to all of the desired positions on the wafer W, the wafer W is transferred by the transfer device 100 to the transition device 140, and then transferred by the transfer device 130 to the second bonding device 150. Note that if the bonding process has already been performed in the four second bonding devices 150, the wafer W is transferred to the buffer device 141 and temporarily stored in the buffer device 141.

[0113] The second carrier C2, which has been subjected to the processes of St27 to St29 described above, is transferred to the second bonding device 150. In the second bonding device 150, air is supplied to the through-holes H2 of the second carrier C2 to detach the second die D2 from the suction surface of the second carrier C2 and pick it up. Furthermore, as shown in FIG. 9( f), the surface D2a of the picked-up second die D2 is brought into contact with the surface Wa of the wafer W, and the second die D2 is pressed against the wafer W, thereby bonding the second die D2 to the wafer W (St31 in FIG. 8 ).

[0114] In St31, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been modified in St22 and St28, respectively, van der Waals forces (intermolecular forces) are generated between the surfaces Wa and D2a, thereby bonding the surfaces Wa and D2a together. Furthermore, because the surface Wa of the wafer W and the surface D2a of the second die D2 have been hydrophilized in St23 and St29, respectively, the hydrophilic groups between the surfaces Wa and D2a form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Wa and D2a together.

[0115] As described above, the second bonding apparatus 150 is a low-precision bonding apparatus. Since the second die D2 does not have a circuit or the like formed thereon and therefore requires low bonding precision, the second die D2 is bonded with low precision to a desired position on the wafer W in St31. In this case, since low bonding precision is sufficient, the time required for St31 can be shortened.

[0116] In St31, when all the second dies D2 held in the second carrier C2 are bonded to the wafers W, the second carrier C2 is transferred to the transition device 140 by the transfer device 130, transferred to the transition device 110 by the transfer device 100, transferred to the transition device 80 by the transfer device 70, and further transferred to the FOUP Fc2 by the transfer device 60. On the other hand, if the second die D2 remains in the second carrier C2 after St31 is performed, the second carrier C2 may remain in the second bonding device 150, and the second die D2 may be bonded to the subsequent wafer W. Alternatively, if the second die D2 remains in the second carrier C2 after St31 is performed, the second carrier C2 may be transferred to the buffer device 141 by the transfer device 130 and temporarily stored in the buffer device 141.

[0117] 1 , the wafer W is transferred to the transition device 140 by the transfer device 130, transferred to the transition device 110 by the transfer device 100, and further transferred to the inspection device 90 by the transfer device 70. The inspection device 90, for example, takes an image of the wafer W and inspects for the presence or absence of voids between the front surface Wa of the wafer W and the dies D1 and D2 (St32 in FIG. 8 ). Note that the inspection device 90 may also inspect the positions of the dies D1 and D2 bonded to the front surface Wa of the wafer W.

[0118] Next, the wafer W is transferred to the transition device 80 by the transfer device 70, and further transferred to the FOUP Fw by the transfer device 60. In this way, a series of processes in the mounting processing system 3 is completed, and a plurality of first dies D1 and a plurality of second dies D2 are mounted on the wafer W.

[0119] The FOUPs into which the wafers W, the first carrier C1, and the second carrier C2 are recovered do not necessarily have to be the same FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, when they were carried in. That is, for example, the FOUPs that housed the wafers W, the first carrier C1, and the second carrier C2, respectively, may carry out different members, or new FOUPs or the like for carrying out the wafers W, the first carrier C1, and the second carrier C2 may be carried into the mounting processing system 3.

[0120] According to the above embodiment, the mounting processing system 3 includes the first bonding apparatus 120, which is a high-precision bonding apparatus, and the second bonding apparatus 150, which is a low-precision bonding apparatus. The first die D1 includes a device layer E on which circuits and the like are formed, and therefore requires high bonding accuracy. The first bonding apparatus 120 can bond the first die D1 to a desired position on the wafer W with high accuracy. The second die D2 does not include circuits and therefore requires low bonding accuracy. The second bonding apparatus 150 bonds the second die D2 to a desired position on the wafer W with low accuracy. Since low bonding accuracy is sufficient, the time required for bonding the second die D2 to the wafer W can be shortened. Therefore, the throughput of the die-on-wafer manufacturing process can be improved while appropriately mounting multiple types of first dies D1 and second dies D2 on the wafer W with the required bonding accuracy.

[0121] In this embodiment, the second bonding device 150 is a low-precision bonding device, and the device configuration can be reduced to lower precision specifications compared to a high-precision bonding device. As a result, the device cost of the second bonding device 150 can be reduced, and the device cost of the processing system 1 (mounting processing system 3) can be reduced.

[0122] Here, in the mounting processing system 3, after bonding the first die D1 to the wafer W in St30, the empty first carrier C1 not holding the first die D1 is transferred to the FOUP Fc1. Thereafter, the first carrier C1 is transferred to the carrier preparation processing system 2, and St11 is performed to prepare the first carrier C1 holding a plurality of first dies D1. In this way, the first carrier C1 is repeatedly used in the carrier preparation processing system 2 and the mounting processing system 3.

[0123] That is, as shown in FIG. 10( a), in St11, multiple first dies D1 are placed on the first carrier C1. At this time, the holding layer N1 of the first carrier C1 is pressed, and the portion of the holding layer N1 corresponding to the first die D1 is compressed. Next, as shown in FIG. 10( b), in St30, air is supplied to the through hole H1 of the first carrier C1, and the first die D1 is released from the suction surface of the first carrier C1. At this time, the holding layer N1 of the first carrier C1 expands with the center portion of the through hole H1 as its apex. When this compression and expansion of the holding layer N1 is repeated, as shown in FIG. 10( c), because the film thickness of the holding layer N1 is small, the portion of the holding layer N1 corresponding to the through hole H1 is plastically deformed, sagging downward and stretching at the through hole H1. This weakens the suction force of the holding layer N1 to suction the first die D1.

[0124] Therefore, the plastically deformed retaining layer N1 is regenerated in the carrier regeneration processing system 4. Furthermore, if the first carrier C1 is used repeatedly, the retaining layer N1 becomes unregenerateable, so the retaining layer N1 that does not need to be regenerated is replaced in the carrier reuse processing system 5, and the substrate M1 is reused. Figure 11 is a flow diagram showing the main steps of the regeneration processing and reuse processing of the carriers C1 and C2.

[0125] The timing for regenerating the plastically deformed holding layer N1 (first carrier C1) can be set arbitrarily in the carrier regeneration processing system 4. For example, the regeneration timing may be set based on the number of times the first carrier C1 has been used or the number of processed wafers W.

[0126] In the carrier regeneration system 4, first, the FOUP Fc1 containing the first carrier C1 is placed on the FOUP placement table 160. At this time, the first carrier C1 is placed with its front surface (retaining layer N1) facing upward.

[0127] Next, the first carrier C1 is removed from the FOUP Fc1 by the transport device 170 and transported to the heat treatment device 180. At this time, the front and back surfaces are inverted so that the back surface (substrate M1) faces upward. The inversion of the front and back surfaces of the first carrier C1 may be performed by the transport device 170 or by an inversion device (not shown) provided in the carrier regeneration processing system 4. In the heat treatment device 180, the retention layer N1 of the first carrier C1 is heated to regenerate it (St41 in FIG. 11 ).

[0128] As shown in FIG. 12 , the heat treatment apparatus 180 has a heat treatment plate 300 as a heating unit. The heat treatment plate 300 has a built-in heater (not shown) and heats the first carrier C1. In St41, the heat treatment apparatus 180 supports the retaining layer N1 on the upper surface (support surface) 301 of the heat treatment plate 300, with the substrate M1 positioned above and the retaining layer N1 positioned below. The retaining layer N1 is then heated by the heat treatment plate 300 to a desired heating temperature, for example, 80° C. Note that the heating temperature may be any temperature at which the retaining layer N1 softens, as described below, and is set arbitrarily depending on the material of the retaining layer N1.

[0129] As shown in FIG. 10(c), the retaining layer N1 before heating (before regeneration) is stretched toward the inside of the through-hole H1 and plastically deformed. That is, as shown by the dotted line in the enlarged view in FIG. 12, the retaining layer N1 is stretched convexly upward at the through-hole H1 and plastically deformed. In St41, because the retaining layer N1 has thermoplastic properties, when heated to the desired heating temperature, the retaining layer N1 flows, softens, and is molded flat, as shown by the solid line in the enlarged view in FIG. 12. At this time, because the first carrier C1 is supported on the upper surface 301 of the heat treatment plate 300, the portion of the retaining layer N1 that extends convexly upward is likely to soften downward, and the retaining layer N1 is likely to be molded flat. Furthermore, because the upper surface 301 of the heat treatment plate 300 is flat, the retaining layer N1 is likely to be molded even flatter.

[0130] The first carrier C1, from which the retention layer N1 has been regenerated as described above, is transported to the FOUP Fc1 by the transport device 170. In this way, the processing in the carrier regeneration processing system 4 is completed, and the retention layer N1 in the first carrier C1 is regenerated.

[0131] The FOUP into which the first carrier C1 is recovered does not necessarily have to be the same FOUP that housed the first carrier C1 when it was brought in. That is, for example, the FOUPs that housed the first carrier C1 may each carry out a different component, or a new FOUP or the like may be brought into the carrier regeneration system 4 to carry out the first carrier C1.

[0132] A first carrier C1 (hereinafter referred to as "first remanufactured carrier C1") having a holding layer N1 remanufactured in the carrier remanufacturing processing system 4 is transferred to the carrier preparation processing system 2, where St11 is performed to prepare the first remanufactured carrier C1 holding a plurality of first dies D1. Next, the first remanufactured carrier C1 is transferred to the mounting processing system 3, where St24 to St26 and St30 are performed to mount the plurality of first dies D1 held in the first remanufactured carrier C1 onto wafers W.

[0133] Similarly, after the second carrier C2 is repeatedly used in the carrier preparation processing system 2 and the mounting processing system 3, it is transferred to the carrier reclamation processing system 4, where the retaining layer N2 of the second carrier C2 is heated and regenerated in the heat treatment device 180 (St42 in FIG. 11 ). The second carrier C2 having the retaining layer N2 regenerated in the carrier reclamation processing system 4 (hereinafter referred to as the "second regenerated carrier C2") is transferred to the carrier preparation processing system 2, where St12 is performed to prepare the second regenerated carrier C2 holding a plurality of second dies D2. Next, the second regenerated carrier C2 is transferred to the mounting processing system 3, where St27 to St29 and St31 are performed to mount the plurality of second dies D2 held in the second regenerated carrier C2 on wafers W.

[0134] In the carrier regeneration processing system 4, the retention layer N1 is regenerated in St41, but if the first carrier C1 is used repeatedly, the retention layer N1 becomes unregenerate. On the other hand, since the base material M1 is less susceptible to damage than the retention layer N1, the base material M1 can often be used even if the retention layer N1 is unregenerate.

[0135] Therefore, next, in the carrier reuse processing system 5, the retention layer N1 that does not need to be recycled is replaced, and the substrate M1 is reused. The timing for reusing the substrate M1 (first carrier C1) can be set arbitrarily. For example, the timing for recycling may be set based on the number of times the first carrier C1 has been used or the number of processed wafers W. In the following description, the retention layer N1 before replacement (after use) will be referred to as the old retention layer N11 as the first retention layer, and the new retention layer N1 after replacement will be referred to as the new retention layer N12 as the second retention layer.

[0136] In the carrier reuse processing system 5, first, the FOUP Fc1 containing the first carrier C1 is placed on the FOUP placement table 200. At this time, the first carrier C1 is stored with its front surface (old holding layer N11) facing upward.

[0137] Next, the first carrier C1 is removed from the FOUP Fc1 by the transport device 210 and transported to the transition device 230. The first carrier C1 transported to the transition device 230 is then transported by the transport device 220 to the retention layer removal device 240. In the retention layer removal device 240, the old retention layer N11 of the first carrier C1 is removed from the substrate M1 (St51 in FIG. 11 ).

[0138] 13, the retention layer removal device 240 has a chuck 400 and a peeling tape 410 as a peeling unit. The chuck 400 supports the substrate M1 on an upper surface 401 of the chuck 400, with the old retention layer N11 on top and the substrate M1 on the bottom. The peeling tape 410 supports, for example, the outer edge of the surface of the old retention layer N11, and can lift the outer edge of the surface of the old retention layer N11 obliquely upward by a moving mechanism (not shown).

[0139] In St51, in the retention layer removal device 240, after the first carrier C1 is held by the chuck 400 as shown in Fig. 13(a), a peeling tape 410 is attached to the outer edge of the surface of the old retention layer N11. Next, as shown in Fig. 13(b), the peeling tape 410 is moved obliquely upward, so that the old retention layer N11 is peeled off from the substrate M1 successively from the one end where the peeling tape 410 is attached to the other end.

[0140] Next, the first carrier C1 is transported by the transport device 220 to the substrate cleaning device 241. In the substrate cleaning device 241, the surface of the substrate M1 from which the old retention layer N11 has been removed in the first carrier C1 is cleaned with, for example, a cleaning liquid (St52 in FIG. 11 ).

[0141] Next, the first carrier C1 is transported by the transport device 220 to the retention layer bonding device 242. In the retention layer bonding device 242, a new retention layer N12 is formed by bonding it to the surface of the substrate M1 (St53 in FIG. 11).

[0142] 14, the retention layer laminating device 242 has a chuck 500 and a roller 510. The chuck 500 supports the substrate M1 on an upper surface 501. The roller 510 contacts the surface of the new retention layer N12 and presses the new retention layer N12 against the surface of the substrate M1. The roller 510 can be moved radially over the surface of the new retention layer N12 by a movement mechanism (not shown).

[0143] 14(a), in the retention layer bonding device 242, after the substrate M1 is held by the chuck 500, a roller 510 is placed on the outer edge of the surface of the new retention layer N12 so as to sandwich the outer edge of the surface of the new retention layer N12 between the substrate M1 and the roller 510. Next, as shown in FIG. 14(b), by moving the roller 510 in the radial direction, the new retention layer N12 is pressed against the surface of the substrate M1 successively from one end to the other end and bonded to the surface.

[0144] Next, the first carrier C1 is transported to the transition device 230 by the transport device 220, and further transported to the FOUP Fc1 by the transport device 210. In this way, the series of processes in the carrier reuse processing system 5 is completed, the retaining layer N1 in the first carrier C1 is replaced, and the substrate M1 is reused.

[0145] The FOUP from which the first carrier C1 is recovered does not necessarily have to be the same FOUP that housed the first carrier C1 when it was brought in. That is, for example, the FOUPs that housed the first carrier C1 may each carry out different components, or a new FOUP or the like may be brought into the carrier reuse processing system 5 in order to carry out the first carrier C1.

[0146] A first carrier C1 (hereinafter referred to as "first reuse carrier C1") having substrates M1 reused in the carrier reuse processing system 5 is transferred to the carrier preparation processing system 2, where St11 is performed to prepare the first reuse carrier C1 holding a plurality of first dies D1. Next, the first reuse carrier C1 is transferred to the mounting processing system 3, where St24 to St26 and St30 are performed to mount the plurality of first dies D1 held in the first reuse carrier C1 onto wafers W.

[0147] Similarly, after the second carrier C2 is repeatedly used in the carrier preparation processing system 2 and the mounting processing system 3, it is transported to the carrier reuse processing system 5. In the carrier reuse processing system 5, the retention layer removal device 240 removes the old retention layer N21 of the second carrier C2 from the substrate M2 (St54 in FIG. 11 ). Next, the substrate cleaning device 241 cleans the surface of the substrate M2 after the old retention layer N21 has been removed from the second carrier C2 (St55 in FIG. 11 ). Next, the retention layer bonding device 242 bonds a new retention layer N22 to the surface of the substrate M1 (St56 in FIG. 11 ).

[0148] A second carrier C2 (hereinafter referred to as "second reuse carrier C2") having substrates M2 reused in the carrier reuse processing system 5 is transferred to the carrier preparation processing system 2, where St12 is performed to prepare the second reuse carrier C2 holding a plurality of second dies D2. Next, the second reuse carrier C2 is transferred to the mounting processing system 3, where St27 to St29 and St31 are performed to mount the plurality of second dies D2 held on the second reuse carrier C2 onto wafers W.

[0149] According to the above embodiment, the carrier regeneration system 4 regenerates the retention layers N1 and N2 of the carriers C1 and C2 after the carriers C1 and C2 have been used multiple times, thereby enabling effective use of the carriers C1 and C2. This reduces the cost of the carriers C1 and C2, thereby reducing the cost of the die-on process and improving economy.

[0150] Furthermore, in the carrier reuse processing system 5, after the carriers C1, C2 have been used multiple times, the support layers N1, N2 of the carriers C1, C2 are replaced and the substrates M1, M2 are reused, thereby enabling more effective use of the carriers C1, C2. This reduces the cost of the carriers C1, C2, lowering the cost of the die-on process manufacturing process and further improving economic efficiency.

[0151] In the above embodiment, the heat treatment device 180 may have any configuration as long as it can heat the retention layers N1 and N2 on the carriers C1 and C2.

[0152] For example, as shown in FIG. 15 , the heat treatment apparatus 180 may include a roller 310 as a pressing unit in addition to the heat treatment plate 300. The roller 310 contacts, for example, the back surfaces of the substrates M1 and M2 (the surfaces opposite the retaining layers N1 and N2) and presses the retaining layers N1 and N2 against the heat treatment plate 300 via the substrates M1 and M2. The roller 310 can also be moved radially over the back surfaces of the substrates M1 and M2 by a moving mechanism (not shown). In this case, while the retaining layers N1 and N2 are heated to a desired temperature by the heat treatment plate 300 at Steps St41 and St42, or after the retaining layers N1 and N2 are heated to a desired temperature, the roller 510 is moved radially over the back surfaces of the substrates M1 and M2 to press the entire surfaces of the retaining layers N1 and N2 against the heat treatment plate 300. This softens and flattens the retaining layer N1.

[0153] 16, the heat treatment apparatus 180 may have a heat treatment plate 320 as a heating unit instead of the heat treatment plate 300. The heat treatment plate 320 supports the retaining layer N1 on its lower surface (support surface) 321, with the substrate M1 positioned below and the retaining layer N1 positioned above. In this case, the retaining layers N1 and N2 are heated to a desired heating temperature by the heat treatment plate 320 in steps St41 and St42. This allows the retaining layer N1 to be softened and molded flat.

[0154] Furthermore, the method of heating the retention layers N1 and N2 in the heat treatment device 180 is not limited to the heat treatment plate. For example, the retention layers N1 and N2 may be heated by a heated atmosphere, or may be heated by radiant heat.

[0155] In the above embodiment, the retention layer removal device 240 may have any configuration as long as it can remove the old retention layers N11 and N21 from the substrates M1 and M2 in the carriers C1 and C2.

[0156] 17 , the retention layer removal device 240 may include a heater 420 as a heating unit in addition to the chuck 400 and the peeling tape 410. The heater 420 is provided, for example, on the upper surface 401 of the chuck 400 and heats the old retention layers N11 and N21 to a desired heating temperature. In this case, heating the old retention layers N11 and N21 to the desired heating temperature in St51 and St54 reduces the adhesion between the old retention layers N11 and N21 and the substrates M1 and M2. This allows the old retention layers N11 and N21 to be easily peeled off from the substrates M1 and M2 using the peeling tape 410.

[0157] Furthermore, for example, the retention layer removal device 240 may have a laser irradiation unit (not shown) as a heating unit in addition to the chuck 400 and the peeling tape 410. In such a case, the laser irradiation unit is provided above the chuck 400 and irradiates the old retention layers N11 and N21 of the carriers C1 and C2 held by the chuck 400 with laser light. The laser irradiation unit may be located in the same position as the ultraviolet irradiation unit 430 described below. In such a case, when laser light is irradiated onto the old retention layers N11 and N21 at St51 and St54, the adhesion between the old retention layers N11 and N21 and the substrates M1 and M2 is reduced due to the influence of heat. In this case, the old retention layers N11 and N21 can be easily peeled off from the substrates M1 and M2 by the peeling tape 410.

[0158] 18, the retention layer removal device 240 may include an ultraviolet ray irradiation unit 430 in addition to the chuck 400 and the peeling tape 410. The ultraviolet ray irradiation unit 430 is provided above the chuck 400 and irradiates ultraviolet rays U onto the old retention layers N11 and N21 of the carriers C1 and C2 held by the chuck 400. In this case, irradiating the old retention layers N11 and N21 with ultraviolet rays U at Steps St51 and St54 reduces the adhesion between the old retention layers N11 and N21 and the substrates M1 and M2. This allows the old retention layers N11 and N21 to be easily peeled off from the substrates M1 and M2 using the peeling tape 410. Alternatively, the old retention layers N11 and N21 may be removed by irradiating them with ultraviolet rays U alone from the ultraviolet ray irradiation unit 430.

[0159] 19, the retention layer removal device 240 may have, instead of the peeling tape 410, a suction pad 440 that suction-holds the entire surfaces of the old retention layers N11 and N21. The suction pad 440 is configured to be able to move up and down vertically by a movement mechanism (not shown). In this case, in St51 and St54, the suction pad 440 is raised while suction-holding the entire surfaces of the old retention layers N11 and N21. This causes the old retention layers N11 and N21 to be peeled off from the substrates M1 and M2.

[0160] 20 , the retention layer removal device 240 may have a processing liquid nozzle 450 as a dissolving unit instead of the peeling tape 410. The processing liquid nozzle 450 is provided above the chuck 400 and supplies processing liquid P to the old retention layers N11 and N21 of the carriers C1 and C2 held by the chuck 400. A chemical solution, such as an organic solvent, that dissolves the old retention layers N11 and N21 is used as the processing liquid P. The chuck 400 is also configured to be rotatable. In this case, the processing liquid P is supplied to the old retention layers N11 and N21 while the carriers C1 and C2 held by the chuck 400 are rotated at Steps St51 and St54. The supplied processing liquid P then spreads over the old retention layers N11 and N21, dissolving and removing the old retention layers N11 and N21. The treatment liquid P is a chemical liquid that does not damage the substrates M1 and M2, and the substrates M1 and M2 can be appropriately reused after St51 and St54 are performed.

[0161] Furthermore, for example, the retention layer removal apparatus 240 may be a plasma processing apparatus having a plasma generation unit (not shown) as a decomposition unit. The plasma generation unit is configured to generate plasma from at least one processing gas supplied to the plasma processing space inside the retention layer removal apparatus 240. In this case, in St51 and St54, the old retention layers N11 and N21 are decomposed and removed using the plasma generated in the plasma generation unit.

[0162] In the above embodiment, the substrate cleaning device 241 may have any configuration as long as it can clean the surfaces of the substrates M1 and M2 in the carriers C1 and C2. For example, the substrate cleaning device 241 may clean the surfaces of the substrates M1 and M2 by irradiating the surfaces with ultraviolet light.

[0163] In the above embodiment, the support layer laminating device 242 may have any configuration as long as it can laminate the new support layers N12 and N22 onto the surfaces of the substrates M1 and M2 in the carriers C1 and C2.

[0164] 21 , the retention layer bonding device 242 may have, instead of the roller 510, a suction pad 520 that suction-holds the entire surfaces of the new retention layers N12 and N22. The suction pad 520 is configured to be able to move up and down vertically by a movement mechanism (not shown). In this case, in Steps St53 and St56, the substrates M1 and M2 held on the upper surface 501 of the chuck 500 are positioned opposite the new retention layers N12 and N22 held on the lower surface of the suction pad 520, and the suction pad 520 is lowered. This presses and bonds the substrates M1 and M2 to the new retention layers N12 and N22.

[0165] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0166] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that would be apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0167] 1 Processing system 4 Carrier regeneration processing system 180 Heat treatment device C1 First carrier C2 Second carrier D1 First die D2 Second die M1, M2 Substrate N1, N2 Support layer

Claims

1. A processing system for regenerating a carrier having a laminated structure of a substrate and a retaining layer, the retaining layer being capable of holding a die, the processing system including a heat treatment device for heating the thermoplastic retaining layer to regenerate the carrier.

2. The processing system according to claim 1, wherein the heat treatment device has a support surface that supports the retention layer and a heat treatment plate that heats the retention layer.

3. The processing system of claim 2, wherein the thermal processing device supports the retainer layer on an upper surface of the thermal processing plate.

4. The processing system according to claim 1, wherein the heat treatment device comprises: a heating section that heats the retention layer; and a pressing section that presses the retention layer.

5. The processing system of claim 1, further comprising a bonding device that bonds the plurality of dies held by the carrier having the refurbished holding layer to a target substrate.

6. The processing system of claim 1, further comprising a placement device that places a plurality of said dies on said carrier having said refurbished support layer.

7. A processing method for regenerating a carrier having a structure in which a substrate and a retaining layer are laminated, and in which the retaining layer can hold a die, the processing method comprising heating the retaining layer, which has thermoplastic properties, to regenerate the carrier.

8. The treatment method according to claim 7, wherein when the retaining layer is regenerated, the retaining layer is supported on a support surface of a heat treatment plate and heated.

9. The processing method according to claim 8, wherein the support layer is supported on the upper surface of the heat treatment plate when the support layer is heated.

10. The method of claim 7, wherein regenerating the retainer layer comprises: heating the retainer layer; and pressing the retainer layer.

11. The processing method of claim 7, further comprising bonding a plurality of said dies held by said carrier having said refurbished holding layer to a target substrate.

12. The method of claim 7, including placing a plurality of said dies on said carrier having said retainer layer refurbished.

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