Susceptor assembly and chemical vapor deposition apparatus

Abstract

The present invention relates to a susceptor assembly and a chemical vapor deposition apparatus, and, more specifically, to a susceptor assembly and a chemical vapor deposition apparatus, which are capable of reducing temperature deviation of a substrate when a silicon carbide (SiC) film or the like is deposited on the substrate.

Description

Susceptor assembly and chemical vapor deposition apparatus

[0001] The present invention relates to a susceptor assembly and a chemical vapor deposition apparatus, and more particularly, to a susceptor assembly and a chemical vapor deposition apparatus capable of reducing temperature deviation of a substrate when depositing a silicon carbide (SiC) film or the like on the substrate.

[0002] Demand for SiC power semiconductor devices has been rapidly increasing recently, and the related market is expected to continue to grow.

[0003] These SiC power semiconductor devices can be manufactured by placing a substrate in a reaction chamber, supplying a mixture of process gas and carrier gas into the reaction chamber, and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor by thermal decomposition.

[0004] Conventional chemical vapor deposition devices typically employ a configuration that includes an induction heating coil formed spirally at the bottom of a susceptor. In this case, the temperature of the induction heating coil decreases in the center, resulting in a temperature differential with respect to the substrate mounted on the susceptor, making it difficult for the process to proceed smoothly.

[0005] The purpose of the present invention is to provide a chemical vapor deposition apparatus capable of reducing the temperature deviation of a substrate in order to solve the above-mentioned problems.

[0006] The above object of the present invention can be achieved by a susceptor assembly characterized by comprising a body part in which a concave part is formed into which a substrate or a satellite on which the substrate is to be mounted is inserted, a susceptor having a protrusion protruding downward from the body part, and a heater for heating the susceptor.

[0007] Here, the diameter of the protrusion is 35 mm to 50 mm, and the height of the protrusion may be smaller than the diameter.

[0008] Additionally, the protrusion can be detachably connected to the body portion.

[0009] Furthermore, the protrusion may not have a constant cross-sectional area, and the protrusion may have a smaller cross-sectional area as it moves away from the body.

[0010] In addition, a gas passage may be further provided that penetrates the protrusion or the body portion and is connected to the concave portion.

[0011] In this case, the gas path may include a main gas path penetrating the protrusion or the body portion, and a plurality of sub-gas paths branching from the main gas path and connected to the concave portion.

[0012] Additionally, the diameter of the gas passage may be 5 mm or less.

[0013] Meanwhile, the heater may be composed of an induction heating coil and may include a first heater portion arranged at the lower portion of the body portion and a second heater portion arranged to surround the protrusion portion.

[0014] In this case, the first heater part is configured in a shape that is bent and rolled from the lower part of the body part toward the center part, and the second heater part can be arranged to wrap the protrusion part multiple times along the vertical direction of the protrusion part.

[0015] Meanwhile, the cross-section of the first heater part may correspond to a long rectangle in the horizontal direction, and the cross-section of the second heater part may correspond to a square or a long rectangle in the horizontal direction.

[0016] Additionally, the second gap between the protrusion and the second heater part may be 1.0 to 1.5 times larger than the first gap between the first heater part and the body part.

[0017] Furthermore, the first gap between the first heater portion and the body portion may be 5 mm to 20 mm.

[0018] Additionally, the cross-sectional areas of the first heater portion and the second heater portion may be 60 ㎟ to 250 ㎟.

[0019] Furthermore, the coils forming the first heater section may not have a constant spacing.

[0020] Meanwhile, the spacing between the coils forming the first heater section may be 3 mm to 30 mm.

[0021] In this case, the first heater part and the second heater part may be configured integrally.

[0022] Additionally, the gap between the second heater portion and the protrusion portion may not be constant.

[0023] Meanwhile, the above object of the present invention can be achieved by a chemical vapor deposition apparatus comprising a chamber, an inner chamber provided inside the chamber, a susceptor assembly provided inside the inner chamber to place the substrate and heat the substrate, and an upper plate provided inside the inner chamber and provided above the susceptor assembly to provide a processing space for processing the substrate between the susceptor assembly and the upper plate, wherein the susceptor assembly comprises a body portion in which a concave portion is formed into which the substrate or a satellite on which the substrate is placed is inserted, a susceptor having a protrusion protruding downward from the body portion, and a heater for heating the susceptor.

[0024] Furthermore, the heater may be configured with an induction heating coil and may include a first heater portion arranged at the lower portion of the body portion and a second heater portion arranged to surround the protrusion portion.

[0025] Meanwhile, the cross-section of the first heater unit may correspond to a long rectangle in the horizontal direction, and the cross-section of the second heater unit may correspond to a square or a long rectangle in the horizontal direction.

[0026] Additionally, the second gap between the protrusion and the second heater part may be 1.0 to 1.5 times larger than the first gap between the first heater part and the body part.

[0027] Furthermore, the body of the susceptor may be fixed to the chamber or the inner chamber, and the lower end of the protrusion of the susceptor may be spaced apart from the chamber or the inner chamber.

[0028] According to the present invention having the above-described configuration, by providing a protrusion at the lower part of the body of the susceptor and heating not only the body but also the protrusion, the temperature deviation of the substrate can be reduced, thereby improving the thickness and doping uniformity of the film on the substrate.

[0029] FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention;

[0030] FIG. 2 is a side view illustrating a susceptor assembly according to one embodiment;

[0031] FIG. 3 is a side view illustrating a susceptor assembly according to another embodiment;

[0032] Fig. 4 is a perspective view of the heater;

[0033] Fig. 5 is a plan view of the heater;

[0034] FIG. 6 is a side view illustrating a susceptor assembly according to another embodiment.

[0035] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0036] FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0037] Referring to Fig. 1, the chemical vapor deposition device (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).

[0038] An accommodation space (110) is provided inside the chamber (100), and an internal chamber (300) may be provided in the accommodation space (110).

[0039] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0040] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) through which gas is supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0041] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called dual chamber structure in this way, the possibility of particle contamination of the substrate (W) can be reduced, and the process for the substrate (W) can be performed more smoothly.

[0042] In addition, the inner chamber (300) may function as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor assembly (330) described below, and may be composed of carbon felt, graphite felt, or the like. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, or the like.

[0043] In this way, when the inner chamber (300) or the heat blocking member is provided, the heat from the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), so that the processing space (312) can be heated more effectively.

[0044] Specifically, the substrate (W) or a satellite (328) on which the substrate (W) is mounted is mounted inside the inner chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper plate (310) provided on the upper side of the susceptor assembly (330) inside the inner chamber (300) to provide a processing space between the susceptor assembly (330) and the substrate (W) for processing may be provided.

[0045] In addition, the susceptor assembly (330) may include a body portion (322) (see FIG. 2) in which a concave portion (326) is formed into which the substrate (W) or a satellite (328) on which the substrate (W) is mounted is inserted, a susceptor (320) having a protrusion (324) (see FIG. 2) protruding downward from the body portion (322), and a heater (340) for heating the susceptor (320).

[0046] The chemical vapor deposition apparatus (1000) according to the present invention is an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and supplies a process gas or the like from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312) to grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W).

[0047] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (350).

[0048] Meanwhile, as described above, when depositing a silicon carbide (SiC) film on the upper surface of the substrate (W), the process temperature corresponds to a high temperature of approximately 1600 degrees Celsius or higher. Therefore, the upper plate (310) and the susceptor (320) constituting the processing space (312) can use graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material using a CVD sintering method to increase thermal stability and thermal conductivity, thereby efficiently heating the substrate and reducing power consumption.

[0049] Figure 2 is a side view illustrating the susceptor assembly (330).

[0050] Referring to FIGS. 1 and 2, the processing space (312) is provided between the upper plate (310) and the susceptor (320).

[0051] The above susceptor (320) may have a body portion (322) and a protrusion portion (324) formed by protruding downward from the body portion (322).

[0052] A concave portion (326) is formed on the upper surface of the body portion (322), and the substrate (W) or a satellite (328) on which the substrate (W) is mounted can be mounted in the concave portion (326).

[0053] Meanwhile, when the substrate (W) or the satellite (328) is inserted into the concave portion (326), the substrate (W) or the satellite (328) may be rotatably provided on the susceptor (320).

[0054] That is, a gas passage (350) is further provided that penetrates the protrusion (324) or the body part (322) and is connected to the concave part (326), and a floating gas or the like is supplied toward the lower surface of the substrate (W) or the satellite (328) through the gas passage (350) to rotate the substrate (W) or the satellite (328).

[0055] During the process for the above substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0056] For example, as illustrated in FIG. 2, the gas path (350) may include a main gas path (352) extending from the lower portion of the protrusion (324) toward the upper portion through the protrusion (324), and a plurality of sub-gas paths (354, 356) branching from the main gas path (352) and connected to the concave portion (326).

[0057] The floating gas supplied from the floating gas storage unit (not shown) can be injected into the concave portion (326) through the main gas path (352) and the sub gas paths (354, 356) to rotate the substrate (W) or the satellite (328). In this case, the sub gas paths (354, 356) can be connected at a predetermined angle with respect to the concave portion (326). Therefore, the substrate (W) or the satellite (328) can be rotated by the floating gas injected through the sub gas paths (354, 356).

[0058] The diameter of the above gas path (350) can be appropriately determined, and for example, can be determined to be 5 mm or less. If the diameter of the above gas path (350) exceeds 5 mm, the amount of required floating gas increases, and the temperature uniformity of the edge region of the substrate (W) may deteriorate due to the excessive amount of floating gas.

[0059] Meanwhile, FIG. 3 is a side view illustrating a susceptor assembly (330') according to another embodiment.

[0060] Referring to FIG. 3, in the case of the susceptor assembly (330') according to the present embodiment, the main gas path (362) of the gas path (360) can extend through the body part (322).

[0061] That is, the main gas path (362) can extend from the side of the body part (322) to the central part. The main gas path (362) can branch into a plurality of sub-gas paths (364, 366) at the central part of the body part (322).

[0062] Meanwhile, referring to FIGS. 1 and 2, a gas exhaust pipe (400) through which gas from the processing space (312) is exhausted may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0063] In addition, the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be equipped at the lower portion of the susceptor (320) and may be configured as an induction heating coil. The induction heating coil has advantages in terms of maintenance and equipment operation costs because it can be used semi-permanently after installation.

[0064] In the case of a chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted in which an induction heating coil is formed in a spiral shape at the lower portion of the susceptor (320). In this case, the temperature of the induction heating coil is lowered in the central portion, causing a temperature deviation with respect to the substrate (W), making it difficult for the process for the substrate (W) to proceed smoothly.

[0065] In order to solve the above-mentioned problem, the present invention provides a protrusion (324) formed to protrude downward from the body (322) of the susceptor (320), and a heater (340) for heating the body (322) and the protrusion (324).

[0066] That is, the heater (340) may include a first heater part (342) arranged at the lower portion of the body part (322) and a second heater part (344) arranged to surround the protrusion part (324).

[0067] Figure 4 is a perspective view of the heater (340), and Figure 5 is a plan view of the heater (340).

[0068] Referring to FIGS. 2, 4, and 5, the first heater part (342) may be arranged to be spaced apart from the lower surface of the body part (322) by a predetermined first distance (A1), and the second heater part (344) may be arranged to be spaced apart from the protrusion part (324) by a predetermined second distance (A2).

[0069] Accordingly, the temperature deviation of the substrate (W) can be reduced by heating the body part (322) by the first heater part (342) and simultaneously heating the protrusion part (324) by the second heater part (344).

[0070] The above protrusion (324) is formed in a cylindrical shape, but is not limited thereto and can be appropriately deformed. In addition, the protrusion (324) may be formed integrally with the body (322), but the protrusion (324) may be detachably connected to the body (322).

[0071] That is, when the size of the body part (322) or the diameter of the substrate (W) changes, the diameter (D) or height (H) of the protrusion (324) is changed accordingly and mounted on the body part (322), thereby increasing the heat transfer effect by heating of the protrusion (324).

[0072] The first heater part (342) may have a shape that is bent and rolled toward the center from the lower portion of the body part (322), as illustrated in FIGS. 4 and 5. In addition, the second heater part (344) may be connected to the first heater part (342) at the center of the first heater part (342). The first heater part (342) and the second heater part (344) may be manufactured separately or may be formed as one piece.

[0073] The second heater section (344) may be arranged to wrap the protrusion (324) multiple times along the vertical direction of the protrusion (324). In the drawing, it is illustrated as having three layers or three turns from the top to the bottom, but the number of such turns or layers may be appropriately adjusted depending on the height of the protrusion (324).

[0074] Meanwhile, as illustrated in FIG. 2, the first heater section (342) may have a rectangular shape with a relatively long cross-section in the horizontal direction so as to heat the body section (322) located at the top. This allows the area of ​​the first heater section (342) facing the body section (322) to be expanded, thereby effectively heating the body section (322).

[0075] In addition, the second heater section (344) may have a square cross-section or, although not shown in the drawing, a relatively long rectangular cross-section so as to heat the protrusion (324).

[0076] In this case, the cross-sectional area of ​​the first heater part (342) and the second heater part (344) may be 60 ㎟ to 250 ㎟.

[0077] If the cross-sectional area of ​​the first heater part (342) and the second heater part (344) is less than 60 mm², the cooling water flowing inside the coil of the heater part is reduced, and there is a risk of the coil being damaged by the high-temperature water. On the other hand, if the cross-sectional area of ​​the first heater part (342) and the second heater part (344) exceeds 250 mm², the number of turns that can be wound around the coil is reduced as the cross-sectional area increases, which may result in a decrease in the induction heating efficiency.

[0078] Meanwhile, according to the inventor's experiment, when heating the susceptor (320) by the heater (340), it was found that the shape of the protrusion (324) and the gap between the heater (340) and the susceptor (320) are important.

[0079] For example, when examining the diameter (D) and height (H) of the protrusion (324), it was found that the heating efficiency by the protrusion (324) was excellent when the height (H) of the protrusion (324) was smaller than the diameter (D).

[0080] For example, the diameter (D) of the protrusion (324) can be set to approximately 35 mm to 50 mm, and the height (H) of the protrusion (324) can be set to be smaller than the diameter (D) of the protrusion (324).

[0081] When the diameter (D) of the protrusion (324) is less than 35 mm, the temperature of the central portion of the body portion (322) decreases, thereby lowering the temperature uniformity. Conversely, when the diameter (D) of the protrusion (324) exceeds 50 mm, excessive heat is conducted to the central portion of the protrusion (324) and the body portion (322), thereby increasing the temperature of the central portion compared to the edge of the substrate (W), thereby lowering the temperature uniformity.

[0082] In addition, when examining the gap between the heater (340) and the susceptor (320), it was found that when the second gap (A2) between the protrusion (324) and the second heater part (344) is greater than the first gap (A1) between the first heater part (342) and the body part (322), the heating efficiency by the body part (322) and the protrusion (324) is excellent.

[0083] For example, the second gap (A2) between the protrusion (324) and the second heater part (344) may be 1.0 to 1.5 times larger than the first gap (A1) between the first heater part (342) and the body part (322).

[0084] In this case, the first gap (A1) between the first heater part (342) and the body part (322) may correspond to approximately 5 mm to 20 mm, and the second gap (A2) between the protrusion part (324) and the second heater part (344) may correspond to approximately 12 mm to 30 mm.

[0085] When the first gap (A1) is less than 5 mm, the induction heating efficiency for the body part (322) increases, so that the temperature of the edge of the body part (322) increases compared to the center, and thus the temperature uniformity may decrease. On the other hand, when the first gap (A1) exceeds 20 mm, the induction heating efficiency for the body part (322) decreases, so that the temperature of the edge of the body part (322) drops, and thus the temperature uniformity may also decrease.

[0086] In addition, when the second gap (A2) is less than 1.0 times the first gap (A1), the induction heating efficiency for the protrusion (324) from the second heater part (344) increases, and excessive heat is conducted to the central part of the protrusion (324) and the body part (322), so that the temperature of the central part becomes higher than the edge of the substrate (W), and thus the temperature uniformity may deteriorate.

[0087] On the other hand, when the second gap (A2) is more than 1.5 times the first gap (A1), the induction heating efficiency for the protrusion (324) decreases, and the amount of heat conducted to the central portion of the protrusion (324) and the body portion (322) decreases, so that the temperature of the central portion decreases compared to the edge of the substrate (W), and thus the temperature uniformity may deteriorate.

[0088] Meanwhile, as illustrated in FIG. 5, when the first heater part (342) has a shape that is bent and wound toward the center, the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) is not constant and may vary.

[0089] For example, the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) may be narrower at the edges and, conversely, wider as they get closer to the center. As an example, the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) may be approximately 3 mm to 30 mm.

[0090] Meanwhile, in the plan view of Fig. 5, the flow of process gas for the heater (340) is depicted by arrows.

[0091] That is, the process gas is introduced from one side (or left) of the first heater section (342), passes through the central part of the heater (340), and passes through the other side (or right) of the first heater section (342).

[0092] In this case, the temperature of the process gas initially flowing into the left edge of the first heater section (342) may be relatively low. Therefore, in order to compensate for this low temperature, the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) may be formed narrower at the edge to increase induction heating efficiency and improve temperature uniformity.

[0093] On the other hand, since the temperature of the process gas is higher in the central portion of the first heater section (342) than in the edge, the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) can be formed wider in the central portion.

[0094] If the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) is less than 3 mm, manufacturing is difficult, and on the other hand, if the spacing between the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) exceeds 300 mm, induction heating efficiency may be reduced.

[0095] Meanwhile, FIG. 6 is a side view illustrating a susceptor assembly (330”) according to another embodiment. In FIG. 6, the same reference numbers are used for the same components as in FIG. 2 described above.

[0096] Referring to FIG. 6, the susceptor (320') may have a body portion (322') and a protrusion portion (324') formed by protruding downward from the body portion (322').

[0097] In this case, the protrusion (324') may be deformed from the aforementioned cylindrical shape. For example, the diameter of the protrusion (324') may change non-uniformly, or the cross-sectional area of ​​the protrusion (324') may change non-uniformly.

[0098] That is, in the case of the aforementioned FIGS. 2 and 3, the protrusion (324) may be manufactured in a cylindrical shape so that the cross-sectional area or diameter may be constant.

[0099] However, in this embodiment, the protrusion (324') may be manufactured in a shape with an uneven cross-sectional area or an uneven diameter.

[0100] For example, the cross-sectional area of ​​the protrusion (324') may become smaller as it moves away from the body (322'), as illustrated in FIG. 6. Alternatively, the diameters (D2, D1) of the protrusion (324') may become smaller as it moves away from the body (322'). That is, the diameter (D1) of the lower end of the protrusion (324') may be smaller than the diameter (D2) of the upper end of the protrusion (324').

[0101] In addition, although not shown in the drawing, the protrusion (324') may have a larger cross-sectional area or larger diameter as it moves away from the body (322'). This change in cross-sectional area or diameter may be uniformly larger or uniformly smaller, and furthermore, the cross-sectional area or diameter may change irregularly.

[0102] In addition, when having the above-described configuration, the gap between the second heater part (344) and the protrusion (324') may not be constant.

[0103] For example, as illustrated in FIG. 6, the third gap (A3) between the lower end of the protrusion (324') and the second heater part (344) may be different from the fourth gap (A4) between the upper end of the protrusion (324') and the second heater part (344).

[0104] In the embodiment of Fig. 6, the third gap (A3) between the lower end of the protrusion (324') and the second heater part (344) may be larger than the fourth gap (A4) between the upper end of the protrusion (324') and the second heater part (344). However, this is merely an example, and the gap between the protrusion (324') and the second heater part (344) may increase or decrease consistently, or may even change irregularly.

[0105] As in the present embodiment, by adjusting the cross-sectional area of ​​the protrusion (324') or the gap with the second heater part (344), excessive heat can be prevented from being conducted to the center of the body part (322') and the temperature of the center part of the substrate (W) becoming higher than that of the edge part. As a result, the temperature uniformity for heating the substrate (W) can be improved.

[0106] Meanwhile, the susceptor assembly (330, 330', 330") according to the embodiments of the present invention as described above corresponds to a type in which the body portion (322, 322') of the susceptor (320, 320') is fixedly supported to the chamber (100) or the internal chamber (300). Accordingly, the lower portion of the protrusion (324, 324') is not supported by any part of the chamber (100) or the internal chamber (300) but is spaced apart, so that the heat of the susceptor (320, 320') is not lost through the protrusion (324).

[0107] The above protrusion (324, 324') of the susceptor assembly (330, 330', 330") can be distinguished from the rotational axis of the rotary susceptor according to the prior art.

[0108] Meanwhile, although not shown in the drawings of the present specification, a plurality of auxiliary heaters may be further provided on the upper portion of the upper plate (310) to individually control the temperature of each zone along the flow direction of the process gas in order to reduce the temperature deviation due to the flow of the process gas in the processing space (312).

[0109] Furthermore, in one embodiment, the auxiliary heater may be configured as a resistance heater. This is because if the auxiliary heater is configured as an induction heater, magnetic field interference may occur with the lower induction heating coil.

[0110] In addition, in order to prevent magnetic field interference between the upper and lower induction coils, a single induction coil surrounding both the upper and lower portions of the processing space (312) may be used. However, in the case of such a structure, it may be difficult to maintain the interior of the processing space (312) even when the lid of the chamber is opened and closed. Therefore, in one embodiment, the auxiliary heater is preferably configured as a resistance heater.

[0111] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0112] The present invention relates to a susceptor assembly and a chemical vapor deposition apparatus, and more particularly, to a susceptor assembly and a chemical vapor deposition apparatus capable of reducing temperature deviation of a substrate when depositing a silicon carbide (SiC) film or the like on the substrate.

Claims

1. A susceptor having a body portion in which a concave portion is formed into which a substrate or a satellite on which the substrate is to be mounted is inserted, and a protrusion portion protruding downward from the body portion; and A susceptor assembly characterized by comprising a heater for heating the susceptor.

2. In paragraph 1, The diameter of the above protrusion is 35 mm to 50 mm, A susceptor assembly characterized in that the height of the protrusion is smaller than the diameter.

3. In paragraph 1, A susceptor assembly characterized in that the protrusion is detachably connected to the body.

4. In paragraph 1, A susceptor assembly characterized in that the cross-sectional area or diameter of the above protrusion is not constant.

5. In paragraph 4, A susceptor assembly characterized in that the cross-sectional area or diameter of the protrusion becomes smaller as it moves away from the body.

6. In paragraph 1, A susceptor assembly characterized in that it further comprises a gas passage that penetrates the protrusion or the body portion and is connected to the concave portion.

7. In paragraph 6, The above gas oil A susceptor assembly characterized by having a main gas passage penetrating the protrusion or the body portion, and a plurality of sub-gas passages branching from the main gas passage and connected to the concave portion.

8. In paragraph 7, A susceptor assembly characterized in that the diameter of the gas passage is 5 mm or less.

9. In paragraph 1, The above heater is composed of an induction heating coil, A susceptor assembly characterized by comprising a first heater part arranged at the lower portion of the body part and a second heater part arranged to surround the protrusion part.

10. In paragraph 9, The above first heater part is configured in a shape that is bent and wound from the lower part of the body part toward the center, A susceptor assembly characterized in that the second heater section is arranged to wrap the protrusion multiple times along the vertical direction of the protrusion.

11. In paragraph 9, A susceptor assembly characterized in that the cross-section of the first heater section corresponds to a long rectangle in the horizontal direction, and the cross-section of the second heater section corresponds to a square or a long rectangle in the horizontal direction.

12. In paragraph 9, A susceptor assembly, characterized in that the second gap between the protrusion and the second heater part is 1.0 to 1.5 times greater than the first gap between the first heater part and the body part.

13. In paragraph 9, A susceptor assembly, characterized in that the first gap between the first heater portion and the body portion is 5 mm to 20 mm.

14. In paragraph 9, A susceptor assembly, characterized in that the cross-sectional areas of the first heater portion and the second heater portion are 60 ㎟ to 250 ㎟.

15. In paragraph 9, A susceptor assembly, characterized in that the coils forming the first heater section have an irregular spacing.

16. In paragraph 15, A susceptor assembly, characterized in that the spacing between the coils forming the first heater section is 3 mm to 30 mm.

17. In paragraph 9, A susceptor assembly characterized in that the first heater section and the second heater section are formed integrally.

18. In paragraph 9, A susceptor assembly characterized in that the gap between the second heater portion and the protrusion portion is not constant.

19. Chamber; An inner chamber provided on the inside of the above chamber; A susceptor assembly provided on the inside of the inner chamber, on which the substrate is mounted, and which heats the substrate; and An upper plate is provided on the inside of the inner chamber and on the upper side of the susceptor assembly to provide a processing space where the substrate is processed between the upper plate and the susceptor assembly; A chemical vapor deposition apparatus characterized in that the susceptor assembly comprises a body portion in which a concave portion is formed into which the substrate or a satellite on which the substrate is mounted is inserted, a susceptor having a protrusion protruding downward from the body portion, and a heater for heating the susceptor.

20. In paragraph 19, The above heater is composed of an induction heating coil, A chemical vapor deposition apparatus characterized by comprising a first heater part arranged at the lower part of the body part and a second heater part arranged to surround the protrusion part.

21. In paragraph 20, A chemical vapor deposition apparatus characterized in that the cross-section of the first heater section corresponds to a long rectangle in the horizontal direction, and the cross-section of the second heater section corresponds to a square or a long rectangle in the horizontal direction.

22. In paragraph 20, A chemical vapor deposition apparatus, characterized in that the second gap between the protrusion and the second heater part is 1.0 to 1.5 times larger than the first gap between the first heater part and the body part.

23. In paragraph 19, The above body part is fixed to the chamber or the inner chamber, A chemical vapor deposition apparatus characterized in that the lower part of the protrusion is spaced apart from the chamber or the inner chamber.

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