Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus capable of improving the thickness and doping uniformity of a film on a substrate by reducing temperature deviation of the substrate through heating the substrate not only from the lower part but also from the upper part of the substrate when a silicon carbide (SiC) film or the like is deposited on the substrate, and furthermore, partitioning and heating a processing space in which the substrate is disposed so as to enable temperature correction in regions where temperature deviation of the substrate occurs.

Description

chemical vapor deposition device

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of heating the substrate not only from the lower portion of the substrate but also from the upper portion of the substrate when depositing a silicon carbide (SiC) film or the like on the substrate, and further, by dividing the processing space in which the substrate is placed and heating it, thereby enabling temperature compensation in an area where a temperature deviation of the substrate occurs, thereby reducing the temperature deviation of the substrate and improving the thickness and doping uniformity of the film on the substrate.

[0002] Demand for SiC power semiconductor devices has been rapidly increasing recently, and the related market is expected to continue to grow.

[0003] These SiC power semiconductor devices can be manufactured by placing a substrate in a reaction chamber, supplying a mixture of process gas and carrier gas into the reaction chamber, and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor by thermal decomposition.

[0004] Conventional chemical vapor deposition equipment typically employs a configuration in which heaters are located only at the bottom of the substrate. This configuration requires considerable time to heat the substrate to the required process temperature, and it is also difficult to precisely control the process temperature.

[0005] Accordingly, it was necessary to develop a chemical vapor deposition device that could reduce the time required to heat the substrate to the process temperature and, furthermore, compensate for the temperature in the area where the temperature deviation of the substrate occurs, thereby reducing the temperature deviation of the substrate.

[0006] The present invention aims to provide a chemical vapor deposition apparatus capable of temperature compensation in an area where a temperature deviation of the substrate occurs by arranging a heater not only on the lower portion but also on the upper portion of the substrate in order to solve the above-mentioned problems.

[0007] The above-described object of the present invention can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber, a susceptor provided inside the chamber and on which a substrate is mounted, a lower heater provided at a lower portion of the susceptor and heating the susceptor, and an upper heater provided at an upper portion of the susceptor.

[0008] Here, the lower heater and the upper heater may have different heating methods. For example, the lower heater may be configured as an induction heater, and the upper heater may be configured as a resistance heater.

[0009] In addition, a power supply unit for supplying power to the resistance heating heater may be further provided, and a noise filter may be connected to the power supply unit.

[0010] Meanwhile, a lower plate provided between the susceptor and the lower heater and on which the susceptor is placed, and an upper plate provided between the susceptor and the upper heater may be provided, and a processing space in which the substrate is processed may be formed between the lower plate and the upper plate.

[0011] Furthermore, a gas supply unit for supplying process gas to the processing space may be further provided on one side of the processing space.

[0012] Additionally, the upper heater may be composed of a plurality of zone heaters whose temperatures can be individually controlled. In this case, the plurality of zone heaters may be arranged along the flow direction of the process gas.

[0013] Meanwhile, a heat-blocking member may be further provided inside the chamber to surround the susceptor, the upper heater, and the lower heater.

[0014] In this case, the heat-blocking member may be composed of carbon felt or graphite felt.

[0015] Meanwhile, the above-described object of the present invention can be achieved by a chemical vapor deposition apparatus characterized by comprising a chamber, an inner chamber provided inside the chamber, a susceptor provided inside the inner chamber and on which a substrate is mounted, a lower heater provided at a lower portion of the susceptor and heating the susceptor, and an upper heater provided at an upper portion of the susceptor.

[0016] Here, the lower heater may be configured as an induction heater, and the upper heater may be configured as a resistance heater.

[0017] Additionally, the upper heater may be composed of multiple zone heaters whose temperatures can be individually controlled.

[0018] Meanwhile, a lower plate provided between the susceptor and the lower heater and on which the susceptor is placed, and an upper plate provided between the susceptor and the upper heater may be provided, and a processing space in which the substrate is processed may be formed between the lower plate and the upper plate.

[0019] Additionally, the inner chamber may be composed of carbon felt or graphite felt.

[0020] According to the present invention having the above-described configuration, by arranging heaters not only on the lower portion of the substrate but also on the upper portion, temperature compensation in an area where a temperature deviation of the substrate occurs is possible, thereby reducing the temperature deviation of the substrate and improving the thickness and doping uniformity of the film on the substrate.

[0021] FIG. 1 is a side cross-sectional view showing the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention;

[0022] Figure 2 is a partial perspective view showing the upper heater and the lower heater.

[0023] Figure 3 is an enlarged drawing of the upper heater, lower heater, upper plate, and lower plate.

[0024] Fig. 4 is a graph showing the temperature of the upper plate in the configuration according to Figs. 1 and 2;

[0025] Fig. 5 is a side view showing another embodiment of the upper heater;

[0026] Fig. 6 is a side view showing another embodiment of the upper heater;

[0027] FIG. 7 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus according to another embodiment of the present invention.

[0028] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0029] FIG. 1 is a cross-sectional side view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0030] Referring to FIG. 1, the chemical vapor deposition device (1000) may include a chamber (100), a susceptor (324) provided inside the chamber (100) and on which a substrate (W) is mounted, a lower heater (340) provided at the lower portion of the susceptor (324) and heating the susceptor (324), and an upper heater (330) provided at the upper portion of the susceptor (324).

[0031] A receiving space (110) is provided inside the chamber (100), and various components can be provided therein.

[0032] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may supply various process gases and purge gases toward the processing space (312).

[0033] Here, a lower plate (320) is provided between the susceptor (324) and the lower heater (340) on which the substrate (W) is mounted, and an upper plate (310) is provided between the susceptor (324) and the upper heater (330), and the processing space (312) can be defined between the lower plate (320) and the upper plate (310).

[0034] Meanwhile, the gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) through which gas is supplied may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0035] The chemical vapor deposition apparatus (1000) according to the present invention is an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and supplies a process gas or the like from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312) to grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W).

[0036] Meanwhile, when depositing a silicon carbide (SiC) film on the upper surface of the substrate (W), the process temperature corresponds to a high temperature of approximately 1600 degrees Celsius or higher. Therefore, the upper plate (310) and the lower plate (320) that partition the processing space (312) use graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material using a CVD sintering method, thereby increasing thermal stability and thermal conductivity, efficiently heating the substrate, and reducing power consumption.

[0037] In this case, the lower plate (320) may be provided with a susceptor (324) on which the substrate (W) is mounted.

[0038] For example, a concave portion (322) may be formed in the lower plate (320), and the susceptor (324) may be inserted and placed in the concave portion (322).

[0039] Meanwhile, the susceptor (324) may be rotatably provided on the lower plate (320). That is, a nozzle (not shown) for supplying floating gas or the like toward the lower surface of the susceptor (324) may be provided in the concave portion (322) to rotate the susceptor (324). During a process for the substrate (W), the substrate (W) may be rotated by the rotation of the susceptor (324), so that the process gas or the like supplied from the side may react uniformly on the entire surface of the substrate (W).

[0040] A gas exhaust pipe (400) through which gas of the processing space (312) is exhausted may be connected to the other side of the processing space (312). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas of the processing space (312) to the outside of the chamber (100).

[0041] Meanwhile, the chemical vapor deposition device (1000) may be equipped with an upper heater (330) and a lower heater (340) for heating the substrate (W) and processing space (312) to a process temperature.

[0042] The lower heater (340) may be provided at the lower portion of the lower plate (320), and the upper heater (330) may be provided at the upper portion of the upper plate (310).

[0043] In the case of a chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted in which a heater is provided only at the lower portion of the lower plate (320). In this case, it takes a lot of time to heat the substrate (W) and the processing space (312) to the process temperature, and it is also difficult to precisely control the process temperature.

[0044] In the case of the chemical vapor deposition apparatus according to the present invention, heaters are provided at both the upper and lower portions of the processing space, thereby reducing the time required to heat the substrate and the processing space to the process temperature, and further enabling precise control of the temperature of the substrate and the processing space.

[0045] In this case, the lower heater (340) and the upper heater (330) may be configured as heaters with different heating methods. For example, the lower heater (340) described above may be configured as an induction heating heater, and the upper heater (330) may be configured as a resistance heating heater.

[0046] In the above-described configuration, the temperature of the substrate (W) and the processing space (312) is heated to a temperature similar to the process temperature by the lower heater (340) configured as an induction heater, and then the temperature of the substrate (W) and the processing space (312) can be precisely controlled to correspond to the process temperature by the upper heater (330) configured as a resistance heater.

[0047] The shape of the induction heating coil constituting the above-mentioned lower heater (340) may be a circular or rectangular shape, so-called 'pancake type'. Since the above-mentioned induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0048] Meanwhile, as described above, when the lower heater (340) is configured as an induction heater and the upper heater (330) is configured as a resistance heater, noise may be generated due to magnetic field interference caused by the AC power supplied to the lower heater (340) and the DC power supplied to the upper heater (330). To remove such noise, a noise filter (not shown) may be connected to the upper heater (330). For example, a power supply (not shown) that supplies power to the upper heater (330) may be further provided, and a noise filter may be connected to the power supply.

[0049] The upper heater (330) and lower heater (340) may be installed inside the chamber (100) by a support member not shown in the drawing, or may be connected to and mounted on the upper plate (310) and lower plate (320). There is no specific limitation on the installation structure of the upper heater (330) and lower heater (340).

[0050] Meanwhile, the upper heater (330) may be divided into a plurality of zone heaters (332, 334, 336) whose temperatures can be individually controlled in order to heat the substrate (W) and processing space (312) more efficiently and further to control the process temperature more precisely.

[0051] FIG. 2 is a partial perspective view illustrating the upper heater (330) and the lower heater (340), and FIG. 3 is an enlarged view illustrating the upper heater (330), the lower heater (340), the upper plate (310), and the lower plate (320).

[0052] Referring to FIGS. 1 to 3, the plurality of zone heaters (332, 334, 336) may be provided on the upper portion of the upper plate (310). In this case, the plurality of zone heaters (332, 334, 336) may be mounted on the upper plate (310) and moved to fit the arrangement of the upper plate (310). Accordingly, when performing maintenance on various components of the chamber (100), there are no parts that interfere with each other, thereby contributing to improving throughput by reducing the work time.

[0053] For example, the plurality of zone heaters (332, 334, 336) may be divided into a first zone heater (332), a second zone heater (334), and a third zone heater (336). Here, the number of zone heaters (332, 334, 336) is described as an example, and the upper heater (330) may be composed of a single member, or may further be composed of two zone heaters or four or more zone heaters.

[0054] As described above, when three zone heaters (332, 334, 336) are provided, the first heating space (S1) corresponding to the first zone heater (332) may correspond to the front end of the processing space (312), i.e., the area where the process gas flows into the processing space (312). In this case, the first zone heater (332) may be arranged to correspond to the area from the starting end (D0) of the processing space (312) to the first point (D1). The first point (D1) may be located in front of the front end (A1) of the susceptor (324) or at the front end (A1) of the susceptor (324) along the flow of the process gas in the processing space (312).

[0055] In addition, the second heating space (S2) corresponding to the second zone heater (334) may correspond to an area corresponding to the susceptor (324). The second zone heater (334) may be disposed between a first point (D1) and a second point (D2) along the processing space (312). Here, the first point (D1) may be located at the front end (A1) of the susceptor (324) or in front of the front end (A1) along the flow of the process gas in the processing space (312), and the second point (D2) may be located at the rear end (A2) of the susceptor (324) or in the rear of the rear end (A2) along the flow of the process gas in the processing space (312).

[0056] Accordingly, the substrate (W) can be appropriately heated by the second zone heater (334), and the second zone heater (334) can be arranged to completely cover the substrate (W) or the susceptor (324) from above. That is, since it is important to maintain the temperature of the substrate (W) at the process temperature in the process for the substrate (W), the second zone heater (334) corresponding to the substrate (W) and the susceptor (324) is arranged to completely cover the substrate (W) or the susceptor (324) from above, and it is necessary to control the temperature of the substrate (W).

[0057] Furthermore, the third heating space (S3) corresponding to the third zone heater (336) may correspond to the rear end of the processing space (312), the rear end area where gas, etc. is discharged from the processing space (312). In this case, the third zone heater (336) may be arranged in an area from the second point (D2) at the rear of the susceptor (324) to the end (D3) of the processing space (312).

[0058] Meanwhile, in the configuration described above, the process gas supplied from the side of the processing space (312) by the gas supply unit (200) may be introduced into the front end of the processing space (312), pass through the area where the substrate (W) is placed, and be discharged through the gas exhaust pipe (400) through the rear end of the processing space (312).

[0059] In this case, the plurality of zone heaters (332, 334, 336) described above can be individually equipped to control the temperature in order to heat the process gas and processing space (312). This enables temperature compensation in an area where a temperature deviation of the substrate (W) occurs, thereby reducing the temperature deviation of the substrate (W) and improving the thickness and doping uniformity of the film on the substrate (W).

[0060] Meanwhile, the process gas flowing into the front end of the processing space (312) may have a temperature lower than the process temperature for the substrate (W). Therefore, the first zone heater (332) disposed in the front end of the processing space (312) may heat the first heating space (S1) and the process gas to a predetermined first temperature (T1).

[0061] In addition, the second zone heater (334) corresponding to the area where the substrate (W) is placed heats the substrate (W) and the process gas to a predetermined second temperature (T2), and can maintain the temperature of the second heating space (S2) at the process temperature.

[0062] Furthermore, the third zone heater (336) disposed at the rear end of the processing space (312) can heat the third heating space (S3) to a predetermined third temperature (T3). In this case, the third zone heater (336) plays a role in preventing the temperature of the second heating space (S2) where the substrate (W) is disposed from falling below the process temperature.

[0063] Meanwhile, FIG. 4 is a graph showing the temperature distribution of the upper plate (310) in the configuration according to FIGS. 1 to 3 described above, when the upper heater (330) is not driven and heating is performed only by the lower heater (340). The temperature of the processing space (312) can be indirectly confirmed by the temperature distribution of the upper plate (310).

[0064] In Fig. 4, the vertical axis represents temperature, and the horizontal axis represents the distance from the starting end (D0) of the upper plate (310) toward the end end (D3) according to the flow of the process gas. In addition, although not shown in Figs. 1 and 2, a view port or the like may be formed on the upper portion of the second chamber (300) to measure the temperature of the processing space (312) using a non-contact sensor such as a laser sensor.

[0065] Referring to FIGS. 3 and 4, the temperature of the upper plate (310) corresponding to the first heating space (S1) corresponding to the space from the starting end (D0) of the processing space (312) to the first point (D1), i.e., the front end of the processing space (312), gradually increases as it is heated by the lower heater (340).

[0066] Next, the temperature of the upper plate (310) corresponding to the second heating space (S2) from the first point (D1) to the second point (D2) of the processing space (312), i.e., the second heating space (S2) where the substrate (W) is placed, is heated by the lower heater (340) to approximately the process temperature (T P) can maintain a similar temperature.

[0067] Meanwhile, the temperature of the upper plate (310) corresponding to the third heating space (S3) after the second point (D2) of the processing space (312), i.e. the rear end of the processing space (312), is equal to the process temperature (T P ) gradually descends.

[0068] That is, when only the lower heater (340) operates, the temperature of the first heating space (S1) corresponding to the front end of the processing space (312) is the lowest, the temperature of the second heating space (S2) where the substrate (W) is placed is the highest, and the temperature of the third heating space (S3) corresponding to the rear end of the processing space (312) may correspond to the middle of the first heating space (S1) and the second heating space (S2).

[0069] Accordingly, the heating temperatures of the plurality of zone heaters (332, 334, 336) may be determined according to the temperature of the heating space. For example, the first temperature (T1) of the first zone heater (332) may be the highest, the second temperature (T2) of the second zone heater (334) may be the lowest, and the third temperature (T3) of the third zone heater (336) may be higher than the first temperature (T1) and lower than the second temperature (T2).

[0070] Meanwhile, Fig. 5 is a side view illustrating another embodiment of the upper heater (430). In Fig. 5, the upper heater (330), the lower heater (340), the upper plate (310), and the sub-plate (320) are illustrated in an enlarged manner, and the same components as in the above-described embodiment are denoted by the same reference numbers.

[0071] Referring to Fig. 5, the upper heater (430) may be composed of two zone heaters, for example, a first zone heater (432) and a second zone heater (434). The first zone heater (432) and the first heating space (S1) are similar to those in the above-described embodiment, and thus a repeated description thereof will be omitted.

[0072] Meanwhile, the second heating space (S2') corresponding to the second zone heater (434) may extend from the substrate (W) and the susceptor (324) to the rear end of the processing space (312). That is, the second zone heater (434) may extend from the rear end (A2) of the susceptor (324) by a predetermined length.

[0073] While the second heating space (S2) of the embodiment of the aforementioned FIG. 1 has an area corresponding to the susceptor (324), in the present embodiment, the second heating space (S2') may extend past the susceptor (324) to the rear end of the processing space (312). In this case, the end portion (D2') of the second zone heater (434) may be arranged so as not to reach the end portion (D3) of the processing space (312).

[0074] If the end (D2') of the second zone heater (434) is positioned only up to the rear end (A2) of the susceptor (324), it may not be easy to heat the temperature of the substrate (W) to the process temperature. In addition, if the second zone heater (434) is positioned so as to extend up to the end (D3) of the processing space (312), the temperature of the processing gas discharged from the processing space (312) may be approximately similar to the process temperature, which may cause deposition or the like in the gas exhaust pipe (400) or exhaust path (130), thereby causing particles.

[0075] Accordingly, the terminal end (D2') of the second zone heater (434) is positioned between the rear end (A2) of the susceptor (324) and the terminal end (D3) of the processing space (312), and preferably, the terminal end (D2') of the second zone heater (334) can be positioned midway between the rear end (A2) of the susceptor (324) and the terminal end (D3) of the processing space (312).

[0076] Meanwhile, Fig. 6 is a side view illustrating another embodiment of the upper heater (530). In Fig. 6, the upper heater (330), the lower heater (340), the upper plate (310), and the sub-plate (320) are illustrated in an enlarged manner, and the same components as in the above-described embodiment are denoted by the same reference numbers.

[0077] Referring to FIG. 6, the upper heater (530) may be composed of one zone heater (532), for example, a first zone heater (532).

[0078] Meanwhile, the first heating space (S1') corresponding to the first zone heater (532) may extend from the starting end (D0) of the processing space (312) to the rear end of the processing space (312). That is, the first zone heater (532) may be arranged to extend by a predetermined length from the rear end (A2) of the susceptor (324).

[0079] In addition, the terminal end (D1') of the first zone heater (332) is positioned between the rear end (A2) of the susceptor (324) and the terminal end (D3) of the processing space (312), and preferably, the terminal end (D1') of the first zone heater (332) can be positioned midway between the rear end (A2) of the susceptor (324) and the terminal end (D3) of the processing space (312).

[0080] By this, the process gas flowing into the processing space (312) can be effectively heated to raise the process temperature, and further, the temperature of the process gas discharged from the processing space (312) can be made lower than the process temperature, thereby preventing deposition from occurring in the gas exhaust pipe (400) or exhaust path (130).

[0081] Meanwhile, Fig. 7 is a cross-sectional side view illustrating a chemical vapor deposition apparatus (2000) according to another embodiment of the present invention. In Fig. 7, the same reference numbers are used for the same components as in the aforementioned embodiment.

[0082] Referring to FIG. 7, the chemical vapor deposition device (2000) may adopt a so-called dual chamber structure. That is, an inner chamber (300) may be further provided inside the chamber (100) described above, and the susceptor (324), lower heater (340), and upper heater (330) described above may be provided inside the inner chamber (300).

[0083] Additionally, the upper plate (310) and the lower plate (320) may be provided on the inside of the inner chamber (300).

[0084] By adopting the so-called double chamber structure in this way, the possibility of particle contamination of the substrate (W) can be reduced, and the process for the substrate (W) can be carried out more smoothly.

[0085] The aforementioned gas inlet pipe (220) may be connected to the processing space (312) by penetrating the inner chamber (300). In addition, the gas exhaust pipe (400) may extend from the rear end of the processing space (312) to the outside of the chamber (100) by penetrating the inner chamber (300).

[0086] In the present embodiment, the inner chamber (300) may function as a heat-blocking member. That is, the inner chamber (300) is arranged to surround the susceptor (324), the upper heater (330), and the lower heater (340), and may be composed of carbon felt, graphite felt, or the like. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, or the like.

[0087] In this way, when the inner chamber (300) or the heat blocking member is provided, the heat from the upper heater (330) and the lower heater (340) is not radiated to the outside of the inner chamber (300), so that the processing space (312) can be heated more effectively.

[0088] The description of the upper heater (330), the upper plate (310), the lower plate (320), and the lower heater (340) is similar to that of the above-described embodiment, so a repeated description is omitted.

[0089] While the present invention has been described above with reference to preferred embodiments, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the claims below. Therefore, any modified implementation that fundamentally includes the elements of the claims should be considered within the technical scope of the present invention.

[0090] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of heating the substrate not only from the lower portion of the substrate but also from the upper portion of the substrate when depositing a silicon carbide (SiC) film or the like on the substrate, and further, by dividing the processing space in which the substrate is placed and heating it, thereby enabling temperature compensation in an area where a temperature deviation of the substrate occurs, thereby reducing the temperature deviation of the substrate and improving the thickness and doping uniformity of the film on the substrate.

Claims

1. Chamber; A susceptor provided inside the chamber on which a substrate is mounted; A lower heater provided at the lower portion of the susceptor to heat the susceptor; and A chemical vapor deposition apparatus characterized by comprising an upper heater provided on the upper portion of the susceptor.

2. In paragraph 1, A chemical vapor deposition device characterized in that the lower heater and the upper heater have different heating methods.

3. In paragraph 1, A chemical vapor deposition device characterized in that the lower heater is configured as an induction heating heater and the upper heater is configured as a resistance heating heater.

4. In paragraph 3, A chemical vapor deposition apparatus further comprising a power supply unit for supplying power to the resistance heating heater, and characterized in that a noise filter is connected to the power supply unit.

5. In paragraph 1, A lower plate is provided between the susceptor and the lower heater, and the susceptor is placed thereon, and an upper plate is provided between the susceptor and the upper heater, A chemical vapor deposition apparatus characterized in that a processing space in which the substrate is processed is formed between the lower plate and the upper plate.

6. In paragraph 5, A chemical vapor deposition apparatus characterized in that it further comprises a gas supply unit for supplying process gas to the processing space on one side of the processing space.

7. In paragraph 1, A chemical vapor deposition device characterized in that the upper heater is composed of a plurality of zone heaters whose temperatures can be individually controlled.

8. In paragraph 7, A chemical vapor deposition apparatus characterized in that the plurality of zone heaters are arranged along the flow direction of the process gas.

9. In paragraph 1, Equipped inside the above chamber A chemical vapor deposition apparatus characterized in that it further comprises a heat-blocking member surrounding the susceptor, the upper heater, and the lower heater.

10. In paragraph 9, A chemical vapor deposition device characterized in that the above heat-blocking member is composed of carbon felt or graphite felt.

11. Chamber; An inner chamber provided on the inside of the above chamber; A susceptor provided inside the inner chamber on which a substrate is mounted; A lower heater provided at the lower portion of the susceptor to heat the susceptor; and A chemical vapor deposition apparatus characterized by comprising an upper heater provided on the upper portion of the susceptor.

12. In paragraph 11, A chemical vapor deposition device characterized in that the lower heater is configured as an induction heating heater and the upper heater is configured as a resistance heating heater.

13. In paragraph 12, A chemical vapor deposition device characterized in that the upper heater is composed of a plurality of zone heaters whose temperatures can be individually controlled.

14. In paragraph 11, A lower plate is provided between the susceptor and the lower heater, and the susceptor is placed thereon, and an upper plate is provided between the susceptor and the upper heater, A chemical vapor deposition apparatus characterized in that a processing space in which the substrate is processed is formed between the lower plate and the upper plate.

15. In paragraph 11, A chemical vapor deposition device characterized in that the inner chamber is composed of carbon felt or graphite felt.

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