Epitaxial growth device

Abstract

An epitaxial growth device (100). The epitaxial growth device (100) comprises a heating member (10) and a reaction body (11). The reaction body (11) comprises a plurality of heating seats (201) stacked in a stacking direction, a reaction cavity (202) being provided between any two adjacent heating seats (201). At least one heating seat (201) comprises heat suppression portions (2012a) and heat storage portions (2012b), the wall thickness of the heat suppression portions (2012a) being less than that of the heat storage portions (2012b); the pattern of the orthogonal projection of each heat suppression portion (2012a) onto the plane perpendicular to the stacking direction forms a heat suppression zone, and the pattern of the orthogonal projection of each heat storage portion (2012b) onto the same plane perpendicular to the stacking direction forms a lateral zone; and the heat suppression zones and the lateral zones are arranged in a crossing direction, the crossing direction being perpendicular to the stacking direction and the axial direction of the reaction body.

Description

Epitaxial growth equipment

[0001] Related applications

[0002] This application claims priority to Chinese patent application number 202410171604.6, filed on February 6, 2024, entitled “Epitaxial Growth Apparatus,” the entire text of which is incorporated herein by reference. Technical Field

[0003] The present application relates to the field of semiconductor growth technology, and in particular to an epitaxial growth device. Background Art

[0004] Epitaxial growth is a technique for growing a thin film on a substrate. Chemical vapor deposition (CVD) is a common epitaxial growth process. Specifically, gases or vapors, acting as reaction materials, are introduced into an epitaxial growth apparatus, which contains a reaction chamber that holds a tray. The reactants react within the chamber, ultimately depositing a thin film onto the substrate on the tray. The temperature within the chamber directly affects the deposition rate. Uneven temperatures within the chamber, or significant temperature differences between different chamber regions, can lead to poor thickness uniformity and poor deposition quality.

[0005] Summary of the Invention

[0006] In view of this, the present application provides an epitaxial growth device.

[0007] The epitaxial growth device provided in the present application includes a heating element and a reaction body. The heating element is arranged on the periphery of the reaction body. The reaction body includes a plurality of heating seats stacked into stacks along the stacking direction. At least one heating seat includes a heat suppression part and a heat storage part. The wall thickness of the heat suppression part is smaller than the wall thickness of the heat storage part. The shape of the heat suppression part projected onto a vertical plane in the stacking direction forms a heat suppression zone. The shape of the heat storage part projected onto a vertical plane in the same stacking direction forms a side zone. The heat suppression zone and the side zone are arranged in a transverse direction. The transverse direction is perpendicular to the stacking direction and the axial direction of the reaction body.

[0008] In one embodiment, at least one heating seat is provided with a heat uniformity groove, the heat suppression portion and the heat uniformity groove are arranged correspondingly in sequence along the stacking direction, and the portion of the heating seat without the heat uniformity groove forms a heat storage portion.

[0009] In one embodiment, the heating seat includes a top heating seat located at the top of the stack and a bottom heating seat located at the bottom of the stack, the top heating seat includes a first heat wall and a first radiation wall arranged along the stacking direction, and a first reaction chamber and a first radiation wall are respectively provided on both sides of the first heat wall, the bottom heating seat includes a second heat wall and a second radiation wall arranged along the stacking direction, and a second reaction chamber and a second radiation wall are respectively provided on both sides of the second heat wall, the uniform heat groove includes a first uniform heat groove opened in at least one of the first heat wall and the first radiation wall; and / or, the uniform heat groove includes a second uniform heat groove opened in at least one of the second heat wall and the second radiation wall.

[0010] In one embodiment, the top heating block and the bottom heating block are symmetrical about a bisecting cross section, which is parallel to the transverse direction and the axial direction of the reaction body and includes the axis of the reaction body.

[0011] In one embodiment, the heat-scaling groove includes a first heat-scaling groove opened in the first radiation wall, and the first heat-scaling groove passes through at least one side of the first radiation wall.

[0012] In one embodiment, the heat-scaling groove includes a second heat-scaling groove opened in the second radiation wall, and the second heat-scaling groove passes through at least one side of the second radiation wall.

[0013] In one embodiment, the heat-uniform groove includes a first heat-uniform groove opened in the first heat wall, and the first heat-uniform groove does not pass through both sides of the first heat wall; and / or, the heat-uniform groove includes a second heat-uniform groove opened in the second heat wall, and the second heat-uniform groove does not pass through both sides of the second heat wall.

[0014] In one embodiment, at least one of the top heating seat and the bottom heating seat is provided with a heat-uniform groove, which is divided into two equal longitudinal sections. The equal longitudinal sections are parallel to the stacking direction and the axial direction of the reaction body and include the axis of the reaction body.

[0015] In one embodiment, the uniform heat groove includes a first uniform heat groove opened on the top heating seat, the heat suppression portion includes a first heat suppression portion formed on the top heating seat, and the heat storage portion includes two first heat storage portions formed on the top heating seat. The first heat suppression portion is located between the two first heat storage portions and is arranged in sequence corresponding to the first uniform heat groove along the stacking direction.

[0016] In one embodiment, the uniform heat groove includes a second uniform heat groove opened on the bottom heating seat, the heat suppression portion includes a second heat suppression portion formed on the bottom heating seat, and the heat storage portion includes two second heat storage portions formed on the bottom heating seat. The second heat suppression portion is located between the two second heat storage portions and is arranged in sequence corresponding to the second uniform heat groove along the stacking direction.

[0017] In one embodiment, the uniform heat groove is distributed along the axial direction of the reaction body, wherein the uniform heat groove extends continuously along the axial direction of the reaction body; and / or, the heating seat includes a top heating seat located on the top of the stack, and the uniform heat groove includes a first uniform heat groove opened on the top heating seat, and the first uniform heat groove does not pass through both ends of the top heating seat.

[0018] In one embodiment, the heating seat includes a bottom heating seat located at the bottom of the stack, and the heat uniformity groove includes a second heat uniformity groove opened in the bottom heating seat, and the second heat uniformity groove does not pass through both ends of the bottom heating seat.

[0019] In one embodiment, the heating seat includes a top heating seat, a bottom heating seat, and at least one intermediate heating seat located between the top heating seat and the bottom heating seat, and at least one intermediate heating seat is provided with a heat uniforming groove.

[0020] In one embodiment, the uniform heat groove does not pass through both sides of the intermediate heating seat; and / or the uniform heat groove extends along the axial direction of the reaction body to pass through at least one of the two ends of the intermediate heating seat.

[0021] In one embodiment, the heat-sparing groove extends along the axial direction of the reaction body to pass through both ends of the intermediate heating seat.

[0022] In one embodiment, there are multiple heat-uniform grooves, and the multiple heat-uniform grooves are arranged in sequence along the transverse direction and opened on the middle heating seat.

[0023] In one embodiment, the epitaxial growth device further includes a heat-insulating component, which includes an intermediate heat-insulating felt, and the intermediate heat-insulating felt is arranged in a heat-uniform tank provided in the intermediate heating seat.

[0024] In one embodiment, the resistivity of the material of the middle heating seat is greater than at least one of the resistivity of the material of the top heating seat and the resistivity of the material of the bottom heating seat.

[0025] In one embodiment, the thermal conductivity of the material of the middle heating seat is greater than at least one of the thermal conductivity of the material of the top heating seat and the thermal conductivity of the material of the bottom heating seat.

[0026] In one embodiment, the stacking direction is perpendicular to the axial direction of the reaction body.

[0027] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG1 is a first cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present application, cut along a plane perpendicular to the axial direction of the reaction body.

[0029] FIG2 is a cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present application cut along a plane parallel to the axial direction of the reaction body.

[0030] FIG3 is a cross-sectional view of a reaction body according to an embodiment of the present application after being cut along a plane perpendicular to the axial direction of the reaction body.

[0031] FIG4 is a cross-sectional view of a top heating seat and a bottom heating seat according to an embodiment of the present application, cut along a plane perpendicular to the axial direction of the reaction body.

[0032] FIG5 is a cross-sectional view of the intermediate heating seat according to one embodiment of the present application cut along a plane perpendicular to the axial direction of the reaction body.

[0033] FIG6 is a second cross-sectional view of the epitaxial growth device according to one embodiment of the present application after being cut along a plane perpendicular to the axial direction of the reaction body.

[0034] FIG7 is a cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present application cut along a plane perpendicular to the axial direction of the reaction body.

[0035] FIG8 is a schematic diagram of a partial structure of an epitaxial growth device according to an embodiment of the present application.

[0036] FIG9 is a schematic diagram of a partial structure of an epitaxial growth device according to an embodiment of the present application.

[0037] FIG10 is a schematic diagram showing the temperature distribution of a reactant in an epitaxial growth apparatus of the related art after heating.

[0038] FIG11 is a schematic diagram of the temperature distribution of a reactant after heating according to an embodiment of the present application.

[0039] FIG12 is a schematic diagram of the temperature distribution of a reactant after heating according to an embodiment of the present application.

[0040] Figure numerals: 100, epitaxial growth device; 10, heating element; 11, induction coil; 20, reactor; 201, heating seat; 2011, hot wall; 2012, radiation wall; 2012a, heat suppression part; 2012b, heat storage part; 2013, uniform heat groove; 202, reaction chamber; 2021, first reaction chamber; 2022, second reaction chamber; 21, top heating seat; 211, first hot wall; 212, first radiation wall; 213, first uniform heat groove; 22, bottom heating seat; 221, second hot wall; 222, second radiation wall; 223, second uniform heat groove; 23, middle heating seat; 231, third uniform heat groove; 30, bracket; 40, thermal insulation part; 41, top thermal insulation felt; 42, bottom thermal insulation felt; 43, middle thermal insulation felt; 44, thermal insulation end cover. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0043] The present application provides an epitaxial growth device 100 for preparing a semiconductor epitaxial film by chemical vapor deposition. The epitaxial growth device 100 includes a reaction body, and a reaction chamber is provided inside the reaction body. The steps of preparing a semiconductor epitaxial film by chemical vapor deposition include:

[0044] i. A gas or vapor (hereinafter referred to as a gaseous reaction raw material) is introduced into the reaction chamber of the epitaxial growth apparatus 100;

[0045] ii. heating the reaction body of the epitaxial growth apparatus 100 to increase the temperature within the reaction chamber;

[0046] iii. The gaseous reaction raw materials undergo a chemical reaction in the reaction chamber and are ultimately deposited on the substrate in the reaction chamber to obtain a deposition product, wherein the epitaxial thin film is the deposition product.

[0047] 1 to 2 and 7 , the epitaxial growth apparatus 100 of the present application includes a heating element 10 and a reaction body 20. The heating element 10 is disposed on the peripheral side of the reaction body 20 for heating the reaction body 20 to increase the temperature of the reaction chamber. The reaction body 20 includes at least two heating seats 201 stacked in a preset stacking direction. A reaction chamber 202 is provided between at least two adjacent heating seats 201. The reaction chamber 202 is used to accommodate gaseous reaction raw materials and a substrate for epitaxial thin film deposition and attachment, and serves as a reaction site for the gaseous reaction raw materials.

[0048] In some embodiments, the reaction chamber 202 can be used to accommodate a tray for carrying a substrate. During the chemical reaction of the gaseous reaction materials, the tray can rotate relative to the heating base 201 .

[0049] In some embodiments, the heating element 10 is an induction coil 11. When the induction coil 11 is energized, the reactant 20 generates induction heat under the electromagnetic induction action of the induction coil 11, that is, the induction coil 11 heats the reactant 20 by electromagnetic induction to increase the temperature in the reaction chamber 202.

[0050] In other embodiments, the heating element 10 is not limited to the induction coil 11 , and other heat source devices may also be used as the heating element 10 .

[0051] In some embodiments, the reaction body 20 has a columnar structure, the heating element 10 is a spiral induction coil 11 sleeved on the side of the reaction body 20, the stacking direction of the multiple heating seats 201 is perpendicular to the axial direction of the reaction body 20, and each heating seat 201 extends along the axial direction of the reaction body 20. If the epitaxial growth device 100 is cut along a longitudinal section perpendicular to the axial direction of the reaction body 20, the reaction chamber 202 and the multiple heating seats 201 are arranged in sequence along one of the radial directions of the reaction body 20.

[0052] In the plane rectangular coordinate system shown in FIG2 , the Y-axis extension direction represents the stacking direction of the plurality of heating seats 201 stacked into a stack, and the Z-axis extension direction represents the axial direction of the reaction body 20; in the plane rectangular coordinate system shown in FIG3 , the Y-axis extension direction represents the stacking direction of the plurality of heating seats 201 stacked into a stack, and the X-axis extension direction represents the transverse direction. The axial direction of the reaction body 20 is perpendicular to the plane defined by the Y-axis and the X-axis, and the transverse direction is perpendicular to the axial direction of the reaction body 20. Details regarding the transverse direction are described in detail below.

[0053] As can be seen from FIG. 2 and FIG. 3 , the reaction body 20 and the plurality of heating seats 201 are alternately arranged in sequence along the extending direction of the Y-axis of the plane rectangular coordinate system shown in FIG. 2 and FIG. 3 .

[0054] In some embodiments not shown in the figures, the induction coil 11 can also be of other shapes, for example, the induction coil 11 extends in a spiral shape in a plane, the induction coil 11 does not need to be set on the reaction body 20, and the number of induction coils 11 can also be multiple, for example, the reaction body 20 can be sandwiched between two induction coils 11, or can be surrounded by three or more induction coils 11.

[0055] In the embodiments shown in FIG. 1 to FIG. 3 and FIG. 7 , the reaction body 20 has a cylindrical structure. In some embodiments not shown in the figures, the reaction body 20 may also have a prismatic structure.

[0056] The present application does not limit the number of reaction chambers 202. In one embodiment, in some implementations, there are multiple reaction chambers 202, and any two adjacent heating seats 201 are spaced apart, with a reaction chamber 202 located between any two adjacent heating seats 201. Multiple reaction chambers 202 can each simultaneously accommodate multiple substrates, thereby simultaneously obtaining multiple epitaxial thin films during a single reaction process.

[0057] In some embodiments, the heating seat 201 includes a top heating seat 21 located at the top of the stack, a bottom heating seat 22 located at the bottom of the stack, and an intermediate heating seat 23 located between the top heating seat 21 and the bottom heating seat 22. The reaction chamber 202 includes at least a first reaction chamber 2021 located between the top heating seat 21 and the intermediate heating seat 23, and a second reaction chamber 2022 located between the bottom heating seat 22 and the intermediate heating seat 23. During the chemical reaction of the gaseous reaction materials, the top heating seat 21 is vertically higher than the bottom heating seat 22, and the top heating seat 21, the intermediate heating seat 23, and the bottom heating seat 22 are successively closer to the ground.

[0058] The number of intermediate heating seats 23 can be one or more. In the embodiments shown in Figures 1 to 3 and Figures 6 to 7, the number of intermediate heating seats 23 is one. When there are multiple intermediate heating seats 23, two adjacent intermediate heating seats 23 can also be spaced apart to form a reaction chamber 202. In this case, the number of reaction chambers 202 in the reaction body 20 is three or more.

[0059] It is understandable that in other embodiments, only one reaction chamber 202 may be formed in the reaction body 20 . In this case, the heating seat 201 only includes a top heating seat 21 and a bottom heating seat 22 , and the reaction chamber 202 is formed between the top heating seat 21 and the bottom heating seat 22 .

[0060] In one embodiment, referring to FIG. 1 and FIG. 7 , the epitaxial growth apparatus 100 further includes a bracket 30 , which is provided between two adjacent heating seats 201 arranged along the stacking direction. The bracket 30 is used to define the distance between the two spaced-apart heating seats 201 , thereby defining and maintaining the height dimension of the reaction chamber 202 along the stacking direction.

[0061] In some embodiments, the epitaxial growth apparatus 100 further includes a thermal insulation member 40, at least a portion of which is sleeved or wrapped around the reactor 20 to prevent the reactor 20 from losing heat and causing the temperature of the reaction chamber 202 to drop. Referring to Figures 1 and 3, the thermal insulation member 40 includes a top thermal insulation felt 41 located on the side of the top heating seat 21 away from the bottom heating seat 22, a bottom thermal insulation felt 42 located on the side of the bottom heating seat 22 away from the top heating seat 21, and thermal insulation end caps 44 located at both ends of the reactor 20. The top thermal insulation felt 41 and the bottom thermal insulation felt 42 together form a hollow thermal insulation tube sleeved around the outer periphery of the reactor 20, and the thermal insulation end caps 44 close the openings at both ends of the hollow thermal insulation tube.

[0062] An air inlet and an air outlet (not shown) are respectively provided at both ends of the reaction body 20. The air inlet is connected to the reaction chamber 202 for allowing gaseous reaction materials to enter and be injected into the reaction chamber 202. The air outlet is connected to the reaction chamber 202 for allowing excess or residual gaseous reaction materials to be discharged from the reaction chamber 202.

[0063] The temperature uniformity within the reaction chamber has a significant impact on the quality and thickness of the epitaxial film. If the temperature in different areas of the reaction chamber is not uniform, the reaction rates in different areas of the reaction chamber will be inconsistent, resulting in poor thickness uniformity and uneven quality of the epitaxial film. In order to improve the temperature uniformity within the reaction chamber, the industry currently generally adopts the idea of ​​changing the temperature distribution of the heating element to address the problem of uneven temperature within the reaction chamber. Specific measures include: adjusting the heating power of the heating element, adjusting the relative position of the heating element and the reactant, adjusting the number of turns of the induction coil, adjusting the diameter of the spiral structure formed by the induction coil and / or the density of the coil. In addition, the concentration distribution of the gaseous reaction raw materials in the reaction chamber can also be changed. For example, the concentration of the gaseous reaction raw materials can be locally increased to increase the local thickness of the epitaxial film.

[0064] The epitaxial growth device 100 of the present application overcomes the adverse effects of uneven temperature in the reaction chamber based on a new control concept to improve the quality and thickness uniformity of the epitaxial film. In the epitaxial growth device 100 of the present application, at least one heating seat 201 has a heat suppression portion 2012a and a heat storage portion 2012b, and the wall thickness of the heat suppression portion 2012a is smaller than the wall thickness of the heat storage portion 2012b. The relative position relationship between the heat suppression portion 2012a and the heat storage portion 2012b is configured as follows: if the shape of the heat suppression portion 2012a projected onto a vertical plane in the stacking direction forms a heat suppression zone, and the shape of the heat storage portion 2012b projected onto a vertical plane in the same stacking direction forms a side zone, then the heat suppression zone and the side zone are arranged in a transverse direction.

[0065] The term "vertical plane in the stacking direction" refers to any plane perpendicular to the stacking direction, parallel to the axial direction of the reaction body 20, and also parallel to the cross-direction. The cross-direction is perpendicular to both the stacking direction of the heating base 201 and the axial direction of the reaction body 20. Referring to FIG3 , the cross-direction is represented by the X-axis extending along the rectangular coordinate system in FIG3 . Referring to FIG2 and FIG3 , the plane defined by the X-axis and the Z-axis is equivalent to a vertical plane in the stacking direction.

[0066] 4 and 5 , FIG. 4 illustrates a cross-section of the top heating seat 21 and the bottom heating seat 22 remaining after the middle heating seat 23 in the reaction body 20 shown in FIG. 3 is removed, and FIG. 5 illustrates a cross-section of the middle heating seat 23 remaining after the top heating seat 21 and the bottom heating seat 22 in the reaction body 20 shown in FIG. 3 are removed.

[0067] Taking Figure 4 as an example, the top heating seat 21 is cut by two parallel longitudinal sections, which are parallel to the stacking direction and the axial direction of the reaction body 20, and perpendicular to the transverse direction. The top heating seat 21 is divided into three parts after being cut by the two longitudinal sections. These three parts are arranged in sequence along the transverse direction, wherein: the middle part is the heat suppression part 2012a of the top heating seat 21, referred to as the first heat suppression part; the two parts on the left and right sides are the two heat storage parts 2012b of the top heating seat 21, and the heat storage part 2012b of the top heating seat 21 is referred to as the first heat storage part. The wall thickness of the first heat suppression part is smaller than that of the first heat storage part. The wall thickness of the first heat suppression part is the sum of the physical thickness dimensions of the middle part of the top heating seat 21 along the stacking direction, and the wall thickness of the first heat storage part is the sum of the physical thickness dimensions of the two side parts of the top heating seat 21 along the stacking direction.

[0068] Taking Figure 4 as an example, the bottom heating seat 22 is cut by two parallel longitudinal sections. The two longitudinal sections are parallel to the stacking direction and the axial direction of the reaction body 20, and perpendicular to the transverse direction. The bottom heating seat 22 is divided into three parts after being cut by the two longitudinal sections. The three parts are arranged in sequence along the transverse direction, wherein: the middle part is the heat suppression part 2012a of the bottom heating seat 22, referred to as the second heat suppression part; the two parts on the left and right sides are the two heat storage parts 2012b of the bottom heating seat 22, and the heat storage part 2012b of the bottom heating seat 22 is referred to as the second heat storage part. The wall thickness of the second heat suppression part is smaller than that of the second heat storage part. The wall thickness of the second heat suppression part is the sum of the physical thickness dimensions of the middle part of the bottom heating seat 22 along the stacking direction, and the wall thickness of the second heat storage part is the sum of the physical thickness dimensions of the two side parts of the bottom heating seat 22 along the stacking direction.

[0069] Taking Figure 5 as an example, the intermediate heating seat 23 is cut by ten parallel longitudinal sections. These longitudinal sections are parallel to the stacking direction and the axial direction of the reaction body 20, and perpendicular to the transverse direction. The intermediate heating seat 23 is cut by these longitudinal sections into six thin sections and five thick sections, which are arranged alternately along the transverse direction. The six thin sections constitute the heat suppression portion 2012a of the intermediate heating seat 23, referred to as the third heat suppression portion; the five thick sections constitute the heat storage portion 2012b of the intermediate heating seat 23, referred to as the third heat storage portion. The wall thickness of the third heat suppression portion is smaller than that of the third heat storage portion. The wall thickness of the third heat suppression portion is the sum of the physical thicknesses of the multiple thin sections along the stacking direction, while the wall thickness of the third heat storage portion is the sum of the physical thicknesses of the multiple thick sections along the stacking direction.

[0070] It should be noted that, for the top heating seat 21 and the bottom heating seat 22, the number and distribution of the heat suppression parts 2012a are not limited to those shown in Figures 3 and 4, and the number and distribution of the heat storage parts 2012b are not limited to those shown in Figures 3 and 4. The number of heat suppression parts 2012a can be two or more, and the number of heat storage parts 2012b can be one, or three or more; for the middle heating seat 23, the number and distribution of thick sections are not limited to those shown in Figures 3 and 4, and the number and distribution of thin sections are not limited to those shown in Figures 3 and 4. Regardless of the top heating seat 21, the bottom heating seat 22 or the middle heating seat 23, as long as the heat suppression part 2012a and the heat storage part 2012b are arranged along the transverse direction, so that the two are projected onto the vertical plane of the stacking direction to form a heat suppression zone and a side zone arranged in sequence along the transverse direction, it can be sufficient.

[0071] Specifically, at least one heating seat 201 is provided with a heat-suppressing groove 2013. This heat-suppressing groove 2013 forms a heat-suppressing portion 2012a and a heat-storing portion 2012b. The heat-suppressing groove 2013 is formed by removing material from one or more heating seats 201, thereby reducing the wall thickness of the heating seat 201. The thinned portion with the smaller wall thickness serves as the heat-suppressing portion 2012a, while the portion of the heating seat 201 that has not undergone material removal serves as the heat-storing portion 2012b.

[0072] The smaller wall thickness makes the heat suppression part 2012a smaller and the space volume occupied is reduced, so the upper limit of heat that can be stored in the heat suppression part 2012a is reduced, and the heat radiated by the heat suppression part 2012a to the reaction chamber 202 and the tray is reduced accordingly, which can avoid abnormal overheating caused by excessive local heat absorption of the reaction chamber 202 and improve the heating uniformity of the reaction chamber 202; the uniform heat groove 2013 also makes the physical volume of the heating seat 201 provided with the uniform heat groove 2013 smaller, which means that the rate of heat conduction inside the heating seat 201 is increased, so that the heating seat 201 can be heated to the desired temperature more quickly, and different parts on the heating seat 201 can achieve a uniform temperature distribution in a shorter time.

[0073] Continuing with Figure 4 as an example, the top heating seat 21 is provided with a heat uniforming groove 2013, referred to as the first heat uniforming groove 213. The middle part of the top heating seat 21 cut by two longitudinal sections and the first heat uniforming groove 213 are arranged in sequence along the stacking direction. The two correspond to each other and are located in the interval area between the two longitudinal sections. Accordingly, the left and right sides of the top heating seat 21 where the heat uniforming groove 2013 is not provided form the first heat storage part, and the two longitudinal sections pass through and are tangent to the two opposite sides of the first heat uniforming groove 213 along the transverse direction.

[0074] Taking Figure 4 as an example, the bottom heating seat 22 is provided with a uniform heat groove 2013, referred to as the second uniform heat groove 223. The middle part of the bottom heating seat 22 cut by the two longitudinal sections and the second uniform heat groove 223 are arranged in sequence along the stacking direction. The two correspond to each other and are located in the interval area between the two longitudinal sections. Accordingly, the left and right sides of the bottom heating seat 22 where the uniform heat groove 2013 is not provided form a second heat storage part, and the two longitudinal sections pass through and are tangent to the two opposite sides of the second uniform heat groove 223 along the transverse direction.

[0075] Taking Figure 5 as an example, the middle heating seat 23 is provided with multiple uniform heat grooves 2013, all of which are referred to as third uniform heat grooves 231. The middle heating seat 23 is cut into multiple thin sections by several longitudinal sections, which correspond one to one with the multiple third uniform heat grooves 231. Any group of corresponding thin sections and third uniform heat grooves 231 are arranged in sequence along the stacking direction and are located in the interval area between the two longitudinal sections. Correspondingly, the thick section of the middle heating seat 23 without the uniform heat groove 2013 forms a third heat storage part, and the two longitudinal sections in which any third uniform heat groove 231 is sandwiched pass through and are tangent to the two opposite sides of the third uniform heat groove 231 along the transverse direction.

[0076] It should be noted that the top heating seat 21, the bottom heating seat 22 and the middle heating seat 23 are all provided with a heat uniforming groove 2013, which is only the design of one embodiment of the present application. The present application does not require that all heating seats 201 are provided with a heat uniforming groove 2013. More specifically, the present application does not require that each heating seat 201 can be divided into a heat suppression portion 2012a and a heat storage portion 2012b by providing a heat uniforming groove 2013 or other means. It is sufficient as long as at least one heating seat 201 is provided with a heat uniforming groove 2013 or other means to form a heat suppression portion 2012a and a heat storage portion 2012b arranged along the transverse direction.

[0077] The temperature distribution change and reaction rate optimization effect brought about by providing the uniform heat groove 2013 on different heating seats 201 will be described in detail later.

[0078] In some embodiments, at least one heating seat 201 includes a hot wall 2011 and a radiation wall 2012 arranged in sequence along the stacking direction. The hot wall 2011 is used to be adjacent to and spaced apart from other heating seats 201, so that a reaction chamber 202 is formed between one side of the hot wall 2011 and the other heating seats 201. The radiation wall 2012 is connected to the hot wall 2011 and is located on the other side of the hot wall 2011. The radiation wall 2012 is located on the side of the hot wall 2011 relatively close to the heating element 10 and is used to form the outer peripheral wall of the reaction body 20.

[0079] In the embodiment shown in Figures 1, 2, 3, and 7, the top heater 21 includes a first heat wall 211 and a first radiation wall 212 arranged sequentially along the stacking direction. The first heat wall 211 is located on a side of the first radiation wall 212 that is relatively close to the bottom heater 22. The first radiation wall 212 is used to form the outer peripheral wall of the reaction body 20 and is closer to the heating element 10 than the first heat wall 211. The bottom heater 22 includes a second heat wall 221 and a second radiation wall 222 arranged sequentially along the stacking direction. The second heat wall 221 is located on a side of the second radiation wall 222 that is relatively close to the top heater 21. The second radiation wall 222 is used to form the outer peripheral wall of the reaction body 20 and is closer to the heating element 10 than the second heat wall 221. The reaction chamber 202 includes a first reaction chamber 2021 and a second reaction chamber 2022. The first reaction chamber 2021 is located between the intermediate heater 23 and the first heat wall 211, and the second reaction chamber 2022 is located between the intermediate heater 23 and the second heat wall 221.

[0080] In the embodiments shown in Figures 1, 3, and 6 to 7, the heat suppression zone formed by the first heat suppression portion projected onto a plane perpendicular to the stacking direction along the stacking direction is located between the two side zones formed by the first heat storage portion projected onto the same plane along the stacking direction, and the arrangement order along the transverse direction is: side zone - heat suppression zone - side zone; the heat suppression zone formed by the second heat suppression portion projected onto a plane perpendicular to the stacking direction along the stacking direction is located between the two side zones formed by the second heat storage portion projected onto the same plane along the stacking direction, and the arrangement order along the transverse direction is: side zone - heat suppression zone - side zone. In the embodiment shown in Figure 6, the side of the middle heating seat 23 near the top heating seat 21 and the side near the bottom heating seat 22 are both perpendicular to the stacking direction. The heat suppression zone and the side zone are indicated by F1 and F2, respectively, in Figure 6.

[0081] In the embodiments shown in FIG1 , FIG2 , and FIG6 to FIG7 , the position design of the heat suppression portion 2012a and the heat storage portion 2012b of each of the top heating seat 21 and the bottom heating seat 22 adopts a layout of "the heat storage portion 2012b is located on both sides of the heat suppression portion 2012a and arranged in the transverse direction with the heat suppression portion 2012a". Therefore, the heat suppression zone and the side zone are arranged in the order of "side zone-heat suppression zone-side zone" in the transverse direction. This can improve the temperature uniformity of the first reaction chamber 2021 and the second reaction chamber 2022. More specifically, it improves the uniformity of the temperature distribution inside the first reaction chamber 2021 and the second reaction chamber 2022 along the transverse direction. The principle of achieving temperature uniformity in the reaction chamber 202 is analyzed below:

[0082] Compared with the heat storage part 2012b, the peak value of the heat that can be stored in the heat suppression part 2012a with a smaller wall thickness, that is, the heat storage capacity is reduced, and the heat radiated from the heat suppression part 2012a to the reaction chamber 202 is reduced. Therefore, the middle area between the two longitudinal sections shown in Figure 4 in the reaction chamber 202 obtains less heat from the heat suppression part 2012a and the temperature drops, which reduces the temperature difference between the middle area and the rest of the reaction chamber 202. The temperature uniformity in the reaction chamber 202 is improved accordingly, and the difference in chemical reaction rate between the middle area and the rest of the reaction chamber 202 can be reduced, so that the deposition rate of the gaseous reaction raw materials in different areas of the reaction chamber 202 tends to be consistent, thereby improving the thickness uniformity and deposition quality of the epitaxial film.

[0083] In contrast, in the epitaxial growth device of the related art, during use, the middle area of ​​the reaction chamber receives excessive radiant heat from the heating seat, causing the temperature of the middle area of ​​the reaction chamber to be significantly higher than the temperature on both sides of the middle area. Ultimately, there is a large difference between the reaction rate in the middle area of ​​the reaction chamber and the reaction rate on both sides of the middle area, resulting in uneven thickness and poor quality of the deposited product on the tray substrate.

[0084] Specifically, the first heat uniforming groove 213 is opened in the first radiation wall 212, and the second heat uniforming groove 223 is opened in the second radiation wall 222. In the embodiment shown in Figures 1 and 2, the first heat uniforming groove 213 passes through the side of the first radiation wall 212 close to the first heat wall 211 and the side of the first radiation wall 212 away from the first heat wall 211, and the second heat uniforming groove 223 passes through the side of the second radiation wall 222 close to the second heat wall 221 and the side of the second radiation wall 222 away from the second heat wall 221. The wall thickness of the first heat suppression portion is the wall thickness of the first heat wall 211, and the wall thickness of the first heat storage portion is the wall thickness of the first heat wall 211. 1 and the wall thickness of the first radiation wall 212, the wall thickness of the second heat suppression portion is the wall thickness of the second heat wall 221, and the wall thickness of the second heat storage portion is the sum of the wall thickness of the second heat wall 221 and the wall thickness of the second radiation wall 222; in the embodiment shown in Figure 3, the first heat uniforming groove 213 is a blind groove that passes through the side of the first radiation wall 212 close to the first heat wall 211, and the second heat uniforming groove 223 is a blind groove that passes through the side of the second radiation wall 222 close to the second heat wall 221.

[0085] In one embodiment, the first reaction chamber 2021 and the second reaction chamber 2022 have the same shape and size and are symmetrically arranged about a bisecting cross section. The bisecting cross section is parallel to the transverse direction and the axial direction of the reaction body 20 and perpendicular to the stacking direction. The bisecting cross section includes the axis of the reaction body 20.

[0086] In one embodiment, on the basis that the first reaction chamber 2021 and the second reaction chamber 2022 are symmetrical about a uniformly divided transverse section, the first uniformly divided heat groove 213 and the second uniformly divided heat groove 223 are symmetrically arranged about a uniformly divided transverse section.

[0087] In one embodiment, on the basis that the first reaction chamber 2021 and the second reaction chamber 2022 are symmetrical about the equally divided transverse section, the top heating seat 21 and the bottom heating seat 22 are symmetrically arranged about the equally divided transverse section.

[0088] In one embodiment, the first hot wall 211, the intermediate heating seat 23, and the second hot wall 221 are all flat-plate structures and are parallel to each other. The distance between the first hot wall 211 and the intermediate heating seat 23 is equal to the distance between the second hot wall 221 and the intermediate heating seat 23. Therefore, the first hot wall 211 and the intermediate heating seat 23 on the side facing away from the first hot wall 211 can respectively carry two trays or two substrates in the same posture, and the second hot wall 221 and the intermediate heating seat 23 on the side facing away from the second hot wall 221 can respectively carry two trays or two substrates in the same posture. When the stacking direction is vertical, substrates can be placed horizontally in both the first reaction chamber 2021 and the second reaction chamber 2022.

[0089] In other embodiments, referring to Figure 7, the first heat uniforming groove 213 can also be a blind groove opened in the first heat wall 211, and the second heat uniforming groove 223 can also be a blind groove opened in the second heat wall 221. On this basis, the first heat wall 211 and the first radiation wall 212 can both be provided with the first heat uniforming groove 213, and the second heat wall 221 and the second radiation wall 222 can both be provided with the second heat uniforming groove 223, as long as the first heat uniforming groove 213 does not pass through both sides of the first heat wall 211 and the second heat uniforming groove 223 does not pass through both sides of the second heat wall 221.

[0090] Furthermore, referring to Figures 1, 3, 5 and 6, the intermediate heating seat 23 is provided with a uniform heat groove 2013, referred to as the third uniform heat groove 231. The third uniform heat groove 231 is the physical volume of the intermediate heating seat 23, making the structure of the intermediate heating seat 23 more compact and increasing the rate of heat conduction within the intermediate heating seat 23. The improvement in the thermal conductivity of the intermediate heating seat 23 itself can overcome the following problems caused by the skin effect: in a conventional epitaxial growth device, the temperature of the portion of the intermediate heating seat 23 that is relatively close to the outer wall of the reaction body 20 and the heating element 10 is higher. As it gradually moves away from the outer wall of the reaction body 20 and the heating element 10, the temperature inside the intermediate heating seat 23 becomes lower, resulting in uneven temperatures at different portions of the intermediate heating seat 23.

[0091] Specifically, if the intermediate heating seat of the epitaxial growth device in the related art is cut by a plane perpendicular to the axial direction of the reaction body, and the cross section of the intermediate heating seat forms a cross-sectional figure, then the temperature at the two ends of the cross-sectional figure opposite to each other in the transverse direction is significantly higher than the temperature between the two ends of the cross-sectional figure. The main reason for this is that the heat conduction rate of the intermediate heating seat itself in the related art is too low, and the heat at the two ends of the cross-sectional figure is difficult to be conducted to the area between the two ends of the cross-sectional figure. After the third uniform heat groove 231 is opened, the heat at the left and right ends of the cross section of the intermediate heating seat shown in Figures 3 and 5 can be conducted to the middle of the cross section of the intermediate heating seat more quickly. This not only allows the intermediate heating seat 23 to uniformly heat the first reaction chamber 2021 and the second reaction chamber 2022 along the stacking direction, but also can balance the temperature of different areas in the first reaction chamber 2021 in the transverse direction, and balance the temperature of different areas in the second reaction chamber 2022 in the transverse direction.

[0092] In one embodiment, the third uniform heat groove 231 does not penetrate both the side of the intermediate heating seat 23 near the top heating seat 21 and the side of the intermediate heating seat 23 near the bottom heating seat 22. This ensures that gaseous reaction materials do not diffuse between the reaction chambers 202 on both sides of the intermediate heating seat 23. Accordingly, the third uniform heat groove 231 can be provided on either the side of the intermediate heating seat 23 near the top heating seat 21 or the side of the intermediate heating seat 23 near the bottom heating seat 22.

[0093] In one embodiment, the third uniform heat groove 231 extends along the axial direction of the reactor 20, thereby penetrating at least one of the ends of the intermediate heating seat 23. The ends of the intermediate heating seat 23 are disposed opposite each other along the axial direction of the reactor 20. When the third uniform heat groove 231 penetrates both ends of the intermediate heating seat 23, the problem of uneven temperature of the intermediate heating seat 23 is alleviated at any position along the axial direction of the reactor 20.

[0094] In one embodiment, there are multiple third uniform heat grooves 231. Referring to Figures 1, 3, and 5, multiple third uniform heat grooves 231 are sequentially arranged along the transverse direction and are provided on the intermediate heating seat 23. Thus, the intermediate heating seat 23 has multiple thin sections and multiple thick sections, and the thin sections and thick sections are alternately arranged along the transverse direction. In other embodiments, the number of third uniform heat grooves 231 may be only one.

[0095] Furthermore, in some embodiments, the insulation member 40 further includes an intermediate insulation felt 43 disposed on the intermediate heating seat 23. The intermediate insulation felt 43 is configured to prevent heat transfer between the two sides of the intermediate heating seat 23, thereby preventing the reaction chambers 202 on both sides of the intermediate heating seat 23 from affecting each other's temperature. Referring to FIG. 1 , the intermediate insulation felt 43 is disposed within the third uniform heat tank 231.

[0096] In one embodiment, the inner cavity space of each third heat-uniform groove 231 is filled with the intermediate insulation felt 43, thereby further improving the insulation effect of the intermediate insulation felt 43 and ensuring that the temperature of the reaction chambers 202 on both sides of the intermediate heating seat 23 is appropriate and does not affect each other.

[0097] In some embodiments, the heating element 10 is an induction coil 11 arranged on the side of the reaction body 20. The induction coil 11 causes the reaction body 20 to generate induced current and induced heat through electromagnetic induction. The resistivity of the material of the middle heating seat 23 is greater than the resistivity of the material of the top heating seat 21, and also greater than the resistivity of the material of the bottom heating seat 22. As a result, the heat generation of the middle heating seat 23 is increased, which can overcome the defects of the middle heating seat of related similar products that are difficult to heat up and have a low temperature.

[0098] In some embodiments, the thermal conductivity of the material of the intermediate heating seat 23 is greater than the thermal conductivity of the material of the top heating seat 21 and the thermal conductivity of the material of the bottom heating seat 22. As a result, the thermal conductivity of the intermediate heating seat 23 itself is improved, and heat can be conducted faster from the part of the intermediate heating seat 23 relatively close to the heating element 10 to the inner center of the intermediate heating seat 23. This is also beneficial to improving the temperature uniformity of different parts of the intermediate heating seat 23, so that the tray carried by the intermediate heating seat 23 is evenly heated.

[0099] In one embodiment, in some implementations, regardless of whether the uniform heat groove 2013 is provided in the top heating seat 21, the bottom heating seat 22, or the middle heating seat 23, the uniform heat groove 2013 is distributed along the axial direction of the reaction body 20. The number of uniform heat grooves 2013 can be multiple. The heating seat 201 shown in FIG8 is a top heating seat 21 or a bottom heating seat 22 having a hot wall and a radiating wall, wherein the multiple uniform heat grooves 2013 are arranged in a row along the axial direction of the reaction body 20. Of course, the uniform heat groove 2013 can also be a strip-shaped groove extending continuously along the axial direction of the reaction body 20. The heating seat 201 shown in FIG9 is a top heating seat 21 or a bottom heating seat 22 having a hot wall and a radiating wall.

[0100] In one embodiment, at least some of the uniform heat grooves 2013 do not penetrate the ends of the heating base 201. The ends of the heating base 201 are located opposite each other along the axial direction of the reactor 20. Referring to Figure 2 , the first uniform heat groove 213 provided in the first radiating wall 212 extends axially along the reactor 20 but does not penetrate the ends of the first radiating wall 212. The second uniform heat groove 223 provided in the second radiating wall 222 extends axially along the reactor 20 but does not penetrate the ends of the second radiating wall 222. The third uniform heat groove 231 provided in the intermediate heating base 23 can either extend continuously along the axial direction of the reactor 20, thus penetrating the ends of the intermediate heating base 23, or be a blind groove extending axially along the reactor 20.

[0101] The two ends of the heating seat 201, which are arranged axially opposite to each other along the reaction body 20, can be divided into a front end and a rear end. The front end refers to the end used to receive the gaseous reaction raw materials to be injected into the reaction chamber 202, and the rear end refers to the end used to discharge excess or residual gaseous reaction raw materials. When the uniform heat groove 2013 does not penetrate the front end of the top heating seat 21 and / or the front end of the bottom heating seat 22, the front end of the top heating seat 21 and / or the bottom heating seat 22 can radiate more heat to the gaseous reaction raw materials just injected into the reaction chamber 202, so as to increase the initial temperature of the gaseous reaction raw materials entering the reaction chamber 202 and accelerate the chemical reaction process.

[0102] In some embodiments, at least a portion of the heat-smoothing groove 2013 is bisected by a longitudinal section, wherein the bisected longitudinal section is parallel to the stacking direction and the axial direction of the reaction body 20, and perpendicular to the transverse direction, and the bisected longitudinal section includes the axis of the reaction body 20. Referring to Figures 1 and 3, the first heat-smoothing groove 213 and the second heat-smoothing groove 223 are both bisected by longitudinal sections. With this arrangement, the first heat suppression portion is more centered in the transverse direction relative to the two first heat storage portions on either side of the first heat suppression portion, and the second heat suppression portion is also more centered in the transverse direction relative to the two second heat storage portions on either side of the second heat suppression portion. This further helps alleviate the problem of overheating in the middle regions of the first reaction chamber 2021 and the second reaction chamber 2022, reduces the temperature difference between the middle region of the reaction chamber 202 and the sides of the middle region, and thus improves the temperature uniformity of the reaction chamber 202.

[0103] In one embodiment, the top heating seat 21, the middle heating seat 23 and the bottom heating seat 22 are all symmetrical structures with the equally divided longitudinal section as the symmetry plane. The two side areas formed when the first heat storage part is projected onto the vertical plane in the stacking direction are symmetrically distributed about the equally divided longitudinal section. The two side areas formed when the second heat storage part is projected onto the vertical plane in the stacking direction are symmetrically distributed about the equally divided longitudinal section. The first uniform heat groove 213 and the second uniform heat groove 223 are equally divided by the equally divided longitudinal section. The heat suppression areas formed when the first heat suppression part and the second heat suppression part are projected onto the vertical plane in the stacking direction are equally divided by the equally divided longitudinal section.

[0104] The following is an analysis of the temperature distribution changes and reaction rate optimization effects brought about by opening the uniform heat groove 2013 on different heating seats 201 to form the heat suppression portion 2012a and the heat storage portion 2012b in combination with the simulation experimental data shown in Figures 10 to 12.

[0105] Before the simulation experiment, six groups of temperature sampling points were pre-set for the reaction body 20 shown in FIG1 and FIG3 , as shown in FIG6 , where:

[0106] The first set of temperature sampling points is represented by T1, which represents the center temperature of the hot wall 2011 (first hot wall 211) of the top heating seat 21 relatively close to the middle heating seat 23;

[0107] The second set of temperature sampling points is represented by T2, which represents the center temperature of the side of the middle heating seat 23 relatively close to the top heating seat 21;

[0108] The third set of temperature sampling points is represented by T3, which is also located on the side of the middle heating seat 23 relatively close to the top heating seat 21, and represents the temperature around the temperature sampling point T2;

[0109] The fourth group of temperature sampling points is represented by T4, which represents the center temperature of the side of the middle heating seat 23 relatively close to the bottom heating seat 22;

[0110] The fifth group of temperature sampling points is represented by T5, which represents the center temperature of the hot wall 2011 (second hot wall 221) of the bottom heating seat 22 relatively close to the middle heating seat 23;

[0111] The sixth group of temperature sampling points is represented by T6. T6 is also located on a side of the second heat wall 221 relatively close to the middle heating seat 23 and represents the temperature around the temperature sampling point T5.

[0112] Figure 10 is a schematic diagram of the temperature distribution of a reaction body of an epitaxial growth device in the related art. The reaction body has the same outer contour as the reaction body of the epitaxial growth device of the present application, and also includes a top heating seat, a middle heating seat and a bottom heating seat stacked in sequence along the stacking direction. However, none of the three heating seats is provided with a uniform heat groove 2013, nor is there a structural division between the heat suppression part 2012a and the heat storage part 2012b.

[0113] Before conducting a simulation experiment on the reaction body in the related technology, six groups of temperature sampling points were also selected. The positions of the six groups of temperature sampling points correspond to the positions of the temperature sampling points in Figure 6. The following are the temperature differences of the six groups of temperature sampling points T1 to T6 in Figure 10: ΔT(1-4)=16℃>15℃; ΔT(5-2)=8℃>5℃; ΔT(2-3)=18℃>10℃; ΔT(5-6)=16℃>10℃.

[0114] In addition, the figure also includes the temperature data of the temperature sampling point Tin (abbreviated as Tin-1) at the air inlet of the top heating seat and the temperature data of the temperature sampling point Tin (abbreviated as Tin-2) at the air inlet of the middle heating seat. The sampling point Tin-1 is located at the front end of the top heating seat, and the sampling point Tin-2 is located at the front end of the middle heating seat. Tin-1 = 1350 ° C, which represents the initial temperature of the gaseous reaction raw materials entering the first reaction chamber, or the starting temperature at the entrance of the first reaction chamber. Tin-2 = 1260 ° C, which represents the initial temperature of the gaseous reaction raw materials entering the second reaction chamber, or the starting temperature at the entrance of the second reaction chamber. ΔTin = 90 ° C.

[0115] Figure 11 is a schematic diagram of the temperature distribution of the reaction body 20 of Example 1 of the present application. In the reaction body 20 of Example 1, the middle heating seat 23 is provided with a plurality of third uniform heat grooves 231, so that the middle heating seat 23 has a structural division of a heat suppression portion 2012a and a heat storage portion 2012b, while the top heating seat 21 and the bottom heating seat 22 are not provided with uniform heat grooves 2013. The following are the temperature differences of the six groups of temperature sampling points T1 to T6 in Figure 11: ΔT(1-4)=45℃>15℃; ΔT(5-2)=7℃>5℃; ΔT(2-3)=11℃>10℃; ΔT(5-6)=11℃>10℃.

[0116] In addition, the figure also includes the temperature data of the temperature sampling point Tin (abbreviated as Tin-1) at the air inlet of the top heating seat 21 and the temperature data of the temperature sampling point Tin (abbreviated as Tin-2) at the air inlet of the middle heating seat 23. The sampling point Tin-1 is located at the front end of the top heating seat 21, and the sampling point Tin-2 is located at the front end of the middle heating seat 23. Tin-1 = 1505°C, which represents the initial temperature of the gaseous reaction raw materials entering the first reaction chamber 2021, or the starting temperature at the entrance of the first reaction chamber 2021. Tin-2 = 1454°C, which represents the initial temperature of the gaseous reaction raw materials entering the second reaction chamber 2022, or the starting temperature at the entrance of the second reaction chamber 2022. ΔTin = 51°C.

[0117] By providing a third uniform heat groove to the middle heating seat of the reaction body in the related art shown in FIG10, the reaction body 20 of the first embodiment of the present application shown in FIG11 can be obtained. Comparing FIG10 with FIG11, the decrease in ΔT(2-3) indicates that the temperature difference between the middle part and the two side parts of the middle heating seat 23 provided with the third uniform heat groove 231 is reduced, and the temperature uniformity is improved, thereby overcoming the defects of the uneven temperature of the middle heating seat 23 caused by the skin effect, the excessively high temperature of the part close to the heating element 10 and the excessively low temperature of the part far from the heating element 10. The decrease in ΔT(5-6) indicates that the temperature uniformity of each part of the second hot wall 221 of the bottom heating seat 22 is also improved; the decrease in ΔTin indicates that the middle heating seat 23 provided with the third uniform heat groove 231 reduces the difference between the inlet starting temperature of the first reaction chamber 2021 and the inlet starting temperature of the second reaction chamber 2022.

[0118] Figure 12 is a schematic diagram of the temperature distribution of the reaction body 20 of Example 2 of the present application. The reaction body 20 of Example 2 is the reaction body 20 shown in Figures 1, 2, 3 and 6. The top heating seat 21, the bottom heating seat 22 and the middle heating seat 23 are all provided with a uniform heat groove 2013. The following are the temperature differences of the six groups of temperature sampling points T1 to T6 in Figure 12: ΔT(1-4)=16℃>15℃; ΔT(5-2)=4℃<5℃; ΔT(2-3)=7℃<10℃; ΔT(5-6)=8℃<10℃.

[0119] In addition, the figure also includes the temperature data of the temperature sampling point Tin (abbreviated as Tin-1) at the air inlet of the top heating seat 21 and the temperature data of the temperature sampling point Tin (abbreviated as Tin-2) at the air inlet of the middle heating seat 23. The sampling point Tin-1 is located at the front end of the top heating seat 21, and the sampling point Tin-2 is located at the front end of the middle heating seat 23. Tin-1 = 1532°C, which represents the initial temperature of the gaseous reaction raw materials entering the first reaction chamber 2021, Tin-2 = 1525°C, which represents the initial temperature of the gaseous reaction raw materials entering the second reaction chamber 2022, and ΔTin = 7°C.

[0120] The ΔTin value in FIG12 is not only significantly lower than the ΔTin value in FIG10 , but also significantly lower than the ΔTin value in FIG11 . Therefore, the difference between the inlet starting temperature of the first reaction chamber 2021 and the inlet starting temperature of the second reaction chamber 2022 is further reduced. The ΔT(2-3) value in FIG12 is lower than the ΔT(2-3) values ​​in FIG10 and FIG11 , and the ΔT(5-6) value in FIG12 is lower than the ΔT(5-6) values ​​in FIG10 and FIG11 . By comparing FIG10 , FIG11 , and FIG12 , it can be obtained that:

[0121] A third uniform heat groove 231 is provided on the intermediate heating seat 23, which improves the temperature uniformity and heat conduction efficiency of the intermediate heating seat 23. Heat can be transferred more quickly and more efficiently from the temperature sampling point T3 to the temperature sampling points T2 and T4, thereby increasing the temperatures of T2 and T4. The temperatures of T3 and T6 are also increased. As a result, the temperatures in the first reaction chamber 2021 and the second reaction chamber 2022 are greatly increased. Ultimately, the trays supported by the intermediate heating seat 23 and the bottom heating seat 22 can be heated to higher temperatures more quickly, which helps to save power consumption of the heating element 10.

[0122] The first uniform heat groove 213 is provided on the top heating seat 21 to reduce heat radiation from the first heat suppression portion to the middle area of ​​the first reaction chamber 2021, thereby lowering the temperatures of T1 and T2. Specifically, the temperature at the center of the first heating wall 211 near the middle heating seat 23 and the temperature at the center of the middle heating seat 23 near the first heating wall 211 are lowered. Ultimately, the temperature difference ΔT(2-3) between T2 and T3 is reduced, thereby improving the temperature uniformity of different parts of the middle heating seat 23.

[0123] Providing a second uniform heat groove 223 on the bottom heating seat 22 can reduce heat radiation from the second heat suppression portion to the middle area of ​​the second reaction chamber 2022, thereby lowering the temperatures of T5 and T4. That is, lowering the temperature at the center of the second hot wall 221 on the side close to the middle heating seat 23 and lowering the temperature at the center of the middle heating seat 23 on the side close to the second hot wall 221. Ultimately, the temperature difference ΔT(5-6) between T5 and T6 is reduced, and the temperature uniformity of different parts of the second hot wall 221 is improved.

[0124] It should be noted that the present application does not limit the number and distribution of the heating seats 201 provided with the uniform heat grooves 2013. The uniform heat grooves 2013 may be provided on different heating seats 201 according to actual temperature control needs to generate the structural division of the heat suppression portion 212a and the heat storage portion 212b. For example:

[0125] When ΔT(1-4) needs to be lowered, for example, to no higher than 15°C, uniform heat grooves 2013 can be provided on the top heating seat 21 and the middle heating seat 23. When the first radiation wall 212 of the top heating seat 21 is provided with a first uniform heat groove 213, the first heat suppression portion is located between the two first heat storage portions, and the first heat suppression portion and the first heat storage portion are arranged in sequence along the transverse direction, the larger the size of the first uniform heat groove 213, the lower the temperature of T1. When the size of the third uniform heat groove 231 is larger, the thermal conductivity of the middle heating seat 23 is stronger, and the temperature of T4 is higher.

[0126] When ΔT(5-2) needs to be lowered, for example, to no higher than 5°C, a uniform heat groove 2013 can be provided on the bottom heating seat 22 and the middle heating seat 23. When the second radiation wall 222 of the bottom heating seat 22 is provided with a second uniform heat groove 223, the second heat suppression portion is located between the two second heat storage portions, and the second heat suppression portion and the second heat storage portion are arranged in sequence along the transverse direction, the larger the size of the second uniform heat groove 223, the lower the temperature of T5. When the size of the third uniform heat groove 231 is larger, the thermal conductivity of the middle heating seat 23 is stronger, and the temperature of T2 is higher.

[0127] When ΔT(2-3) needs to be lowered, for example, to no higher than 10°C, a uniform heat groove 2013 can be provided on the top heating seat 21. When the first radiation wall 212 of the top heating seat 21 is provided with the first uniform heat groove 213, the first heat suppression portion is located between the two first heat storage portions, and the first heat suppression portion and the first heat storage portion are arranged in sequence along the transverse direction, the larger the size of the first uniform heat groove 213, the lower the temperature T2.

[0128] When ΔT(5-6) needs to be lowered, for example, to no higher than 10°C, a uniform heat groove 2013 can be provided on the bottom heating seat 22. When the second radiation wall 222 of the bottom heating seat 22 is provided with a second uniform heat groove 223, the second heat suppression portion is located between the two second heat storage portions, and the second heat suppression portion and the second heat storage portion are arranged in sequence along the transverse direction, the larger the size of the second uniform heat groove 223, the lower the temperature of T5.

[0129] When ΔTin needs to be lowered, a heat uniformity groove 2013 can be opened on the intermediate heating seat 23. The larger the size of the third heat uniformity groove 2013 and the smaller the physical volume of the intermediate heating seat 23, the lower the ΔTin value.

[0130] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0131] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of patent protection for the present application shall be determined by the appended claims.

Claims

1. An epitaxial growth device, characterized in that: The invention comprises a heating element and a reaction body, wherein the heating element is arranged on the peripheral side of the reaction body, and the reaction body comprises a plurality of heating seats stacked in a stacking direction, at least one of the heating seats has a heat suppression portion and a heat storage portion, and the wall thickness of the heat suppression portion is smaller than the wall thickness of the heat storage portion. The figure of the heat suppression part projected onto the vertical plane of the stacking direction forms a heat suppression zone, and the figure of the heat storage part projected onto the same vertical plane of the stacking direction forms a side zone. The heat suppression zone and the side zone are arranged in a cross-direction, and the cross-direction is perpendicular to the stacking direction and the axial direction of the reaction body.

2. The epitaxial growth apparatus according to claim 1, wherein: At least one of the heating seats is provided with a heat uniformity groove, the heat suppression portion and the heat uniformity groove are sequentially arranged correspondingly along the stacking direction, and the portion of the heating seat without the heat uniformity groove forms the heat storage portion.

3. The epitaxial growth apparatus according to claim 2, wherein: The heating seat includes a top heating seat located at the top of the stack and a bottom heating seat located at the bottom of the stack. The top heating seat includes a first heat wall and a first radiation wall arranged along the stacking direction, and a first reaction chamber and a first radiation wall are respectively provided on both sides of the first heat wall. The bottom heating seat includes a second heat wall and a second radiation wall arranged along the stacking direction, and a second reaction chamber and a second radiation wall are respectively provided on both sides of the second heat wall. The heat-sparing groove comprises a first heat-sparing groove opened in at least one of the first heat wall and the first radiation wall; and / or, The heat-striking groove includes a second heat-striking groove opened in at least one of the second heat wall and the second radiation wall.

4. The epitaxial growth apparatus according to claim 3, wherein: The heat-uniform groove comprises a first heat-uniform groove opened in the first radiation wall, and the first heat-uniform groove passes through at least one side of the first radiation wall; and / or, The heat-uniform groove includes a second heat-uniform groove opened in the second radiation wall, and the second heat-uniform groove passes through at least one side of the second radiation wall.

5. The epitaxial growth apparatus according to claim 3, wherein: The heat-distributing groove includes a first heat-distributing groove opened on the first heat wall, and the first heat-distributing groove does not pass through both sides of the first heat wall; and / or, The heat-uniform groove includes a second heat-uniform groove opened on the second heat wall, and the second heat-uniform groove does not pass through both sides of the second heat wall.

6. The epitaxial growth apparatus according to claim 3, wherein: The top heater block and the bottom heater block are symmetrical about a bisecting cross section, wherein the bisecting cross section is parallel to the transverse direction and the axial direction of the reaction body and includes the axis of the reaction body; and / or, At least one of the top heating seat and the bottom heating seat is provided with the uniform heat groove, which is cut by an equally divided longitudinal section, which is parallel to the stacking direction and the axial direction of the reaction body and includes the axis of the reaction body.

7. The epitaxial growth apparatus according to claim 3, wherein: The uniform heat groove includes a first uniform heat groove opened on the top heating seat, the heat suppression portion includes a first heat suppression portion formed on the top heating seat, and the heat storage portion includes two first heat storage portions formed on the top heating seat, the first heat suppression portion is located between the two first heat storage portions and is sequentially arranged corresponding to the first uniform heat groove along the stacking direction; and / or, The uniform heat groove includes a second uniform heat groove opened on the bottom heating seat, the heat suppression portion includes a second heat suppression portion formed on the bottom heating seat, and the heat storage portion includes two second heat storage portions formed on the bottom heating seat, the second heat suppression portion is located between the two second heat storage portions, and is arranged in sequence corresponding to the second uniform heat groove along the stacking direction.

8. The epitaxial growth apparatus according to any one of claims 2 to 7, wherein: The heat-uniform grooves are distributed along the axial direction of the reaction body, wherein the heat-uniform grooves extend continuously along the axial direction of the reaction body; and / or, The heating seat includes a top heating seat located at the top of the stack, and the heat-distributing groove includes a first heat-distributing groove opened on the top heating seat, and the first heat-distributing groove does not pass through both ends of the top heating seat; and / or, The heating seat includes a bottom heating seat located at the bottom of the stack, and the heat-uniform groove includes a second heat-uniform groove opened on the bottom heating seat, and the second heat-uniform groove does not pass through the two ends of the bottom heating seat.

9. The epitaxial growth apparatus according to claim 2, wherein: The heating seat includes a top heating seat, a bottom heating seat, and at least one middle heating seat located between the top heating seat and the bottom heating seat, and at least one middle heating seat is provided with the heat uniforming groove.

10. The epitaxial growth apparatus according to claim 9, wherein: The heat-distributing groove does not pass through both sides of the middle heating seat; and / or, The heat-uniform groove extends along the axial direction of the reaction body to pass through at least one of the two ends of the intermediate heating seat; and / or, There are multiple heat-uniform grooves, and the multiple heat-uniform grooves are arranged in sequence along the transverse direction and opened on the middle heating seat.

11. The epitaxial growth apparatus according to claim 9, wherein: The epitaxial growth device further includes a heat-insulating member, wherein the heat-insulating member includes an intermediate heat-insulating felt, and the intermediate heat-insulating felt is arranged in the heat-uniform groove provided in the intermediate heating seat; and / or, The resistivity of the material of the middle heating seat is greater than at least one of the resistivity of the material of the top heating seat and the resistivity of the material of the bottom heating seat; and / or, The thermal conductivity of the material of the middle heating seat is greater than at least one of the thermal conductivity of the material of the top heating seat and the thermal conductivity of the material of the bottom heating seat.

12. The epitaxial growth apparatus according to any one of claims 1 to 7 and 9 to 11, characterized in that: The stacking direction is perpendicular to the axial direction of the reaction body.

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