Machining method, apparatus, element, device, and storage medium

Abstract

A machining method, used for machining a workpiece (100) having a crack layer (190), wherein the crack layer is located at a specified thickness position in a thickness direction (H) of the workpiece, and the crack layer has cracks (191). The machining method comprises: ultrasonic waves (901) are focused on a crack layer of a workpiece, causing cracks in the crack layer to propagate. The machining method can accelerate propagation of cracks. The present invention further relates to a machining apparatus, an element, a machining device, a crystalline material exfoliation device, and a computer-readable storage medium.

Description

Processing method, device, device, equipment and storage medium Technical Field The present application belongs to the field of semiconductor technology, and in particular relates to a processing method, apparatus, device, equipment and storage medium. Background Art The third-generation semiconductor silicon carbide (SiC) has excellent physical properties such as wide bandgap, high critical breakdown field strength, and high thermal conductivity, making it an ideal substrate material for the preparation of power devices and radio frequency devices. During the preparation of silicon carbide (SiC) substrates, silicon carbide ingots need to be cut into thin silicon carbide wafers. The current processing scheme uses laser to process the silicon carbide ingot, causing cracks to appear inside the silicon carbide ingot. However, these cracks are misaligned in the thickness direction of the silicon carbide ingot. In order to peel off the thin silicon carbide wafers from the silicon carbide ingot, the laser needs to process the silicon carbide ingot multiple times to further expand these cracks, thereby inducing these cracks to connect in the thickness direction of the silicon carbide ingot. Summary of the Invention The embodiments of the present application provide a processing method, apparatus, device, equipment and storage medium that can accelerate the expansion of cracks. In a first aspect, an embodiment of the present application provides a processing method for processing a workpiece having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the workpiece, and the crack layer has cracks; The method comprises: The ultrasonic waves are focused on the crack layer of the workpiece, so that the crack in the crack layer propagates. In a possible implementation of the first aspect, the ultrasonic wave is focused on the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks in the crack layer are extended. In a possible implementation of the first aspect, the ultrasonic wave is focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer extend toward the cracks at adjacent positions. In a possible implementation of the first aspect, the ultrasonic wave is focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer are extended to connect with the cracks at adjacent positions. In a possible implementation of the first aspect, the crack layer may be set at least two points; The ultrasonic wave is focused on the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: The ultrasonic wave moves from one point of the crack layer to another point of the crack layer relative to the workpiece and focuses on different positions of the crack layer of the workpiece, so that the crack of the crack layer expands. In a possible implementation of the first aspect, the two points of the crack layer form a group of points, and the crack layer may be set to have M groups of points, where M is a positive integer; The ultrasonic wave moves from one point of the crack layer relative to the workpiece to another point of the crack layer and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: Starting from i equal to 1 to i equal to M, the ultrasonic wave moves from one point of the i-th group of points of the crack layer relative to the workpiece to another point of the i-th group of points, and focuses on different positions of the crack layer of the workpiece, so that the crack of the crack layer expands, and i is a positive integer. In a possible implementation of the first aspect, one point in each group of points is a point on the edge of the crack layer, another point in each group of points is a designated internal point of the crack layer, and the designated internal points in each group of points are the same, and the designated internal point is a point in the area surrounded by the edge of the crack layer. In a possible implementation manner of the first aspect, a line connecting each group of points passes through a designated internal point of the crack layer, and the designated internal point is a point in an area surrounded by an edge of the crack layer. In a possible implementation manner of the first aspect, M is an integer greater than 1, and a line connecting the i-1th group of points and a line connecting the i-th group of points are two adjacent lines. In a possible implementation of the first aspect, the ultrasonic wave moves from one point of the crack layer relative to the workpiece to another point of the crack layer and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: The ultrasonic wave moves relative to the workpiece from one point on the edge of the crack layer and a designated internal point of the crack layer to another point on the edge and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands. The designated internal point is a point in the area surrounded by the edge of the crack layer. In a possible implementation of the first aspect, N points may be set on the edge of the crack layer, where N is a positive integer; The ultrasonic wave moves relative to the workpiece from one point on the edge of the crack layer and a designated internal point of the crack layer to another point on the edge and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: Starting from P equal to 1 to P equal to N, the ultrasonic wave moves relative to the workpiece from the Pth point on the edge of the crack layer and a designated internal point of the crack layer to another point between the Pth point and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, and P is a positive integer. In a possible implementation manner of the first aspect, N is an integer greater than 1, and the P-1th point and the Pth point are two adjacent points on the edge of the crack layer. In a possible implementation of the first aspect, along the direction in which the ultrasonic wave moves relative to the workpiece, two adjacent areas where the ultrasonic wave is focused have an overlapping portion; Alternatively, along the direction in which the ultrasonic wave moves relative to the workpiece, a gap exists between two adjacent areas where the ultrasonic wave is focused. In a possible implementation of the first aspect, the ultrasonic wave is focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer are extended to be connected with the cracks at adjacent positions in the thickness direction of the workpiece. In a possible implementation manner of the first aspect, the ultrasonic processing path is a spoke-shaped processing path or a spiral processing path. In a possible implementation manner of the first aspect, at least a portion of an edge of the crack layer is an arc, and the designated internal point is a center of the arc. In a possible implementation manner of the first aspect, the designated internal point is the center of an area surrounded by an edge of the crack layer. In a possible implementation manner of the first aspect, along a thickness direction of the workpiece, the ultrasonic wave is transmitted from top to bottom to the crack layer of the workpiece. In a possible implementation of the first aspect, a direction in which the ultrasonic wave is incident on the crack layer of the workpiece has a specified angle with a thickness direction of the workpiece, and the specified angle is less than or equal to a critical angle of incidence of the ultrasonic wave. In a possible implementation manner of the first aspect, the workpiece is immersed in a liquid medium, the ultrasonic wave is transmitted to the crack layer of the workpiece through the liquid medium, and a starting position of the ultrasonic wave is in the liquid medium. In a possible implementation manner of the first aspect, the crack layer is formed by irradiating the workpiece with a laser; the workpiece has a C-surface; and the cracks are distributed along the C-surface. In a second aspect, an embodiment of the present application provides a processing device for processing a workpiece having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the workpiece, and the crack layer has cracks; The device comprises: The ultrasonic focusing module is used to emit ultrasonic waves focused on the crack layer of the workpiece, so that the crack of the crack layer expands. In a third aspect, an embodiment of the present application provides a device manufactured by any of the processing methods described above. In a possible implementation manner of the third aspect, the device has spoke-shaped processing marks. In a fourth aspect, an embodiment of the present application provides a processing device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the processing method described in any one of the first aspects above when executing the computer program. In a fifth aspect, an embodiment of the present application provides a crystal material stripping device for processing a crystal material having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the crystal material, and the crack layer has cracks; The crystal material stripping device comprises: an ultrasonic focusing unit, configured to emit ultrasonic waves focused on the crack layer of the workpiece, so as to cause the crack in the crack layer to expand; A stripping unit is used to strip a wafer from the crystal material along the crack layer. In a sixth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the processing method described in any one of the first aspects above is implemented. In a seventh aspect, an embodiment of the present application provides a computer program product, which, when run on a terminal device, enables the terminal device to execute any one of the processing methods described in the first aspect above. The beneficial effects of the embodiments of the present application are: By focusing ultrasound on the crack layer of the workpiece, the cracks in the crack layer will significantly expand under the combined effects of the shock wave generated by the direct action of ultrasound, the radiation force generated by the original ultrasound, and the radiation force of the subharmonics generated by the original ultrasound. Ultrasonic processing can basically further expand the cracks in the crack layer after one time, accelerate the expansion of the cracks, and improve processing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work. FIG1 is a schematic structural diagram of a cylindrical silicon carbide ingot provided in one embodiment of the present application; FIG2 is a schematic structural diagram of a silicon carbide crystal provided in one embodiment of the present application; FIG3 is a schematic diagram of the cleavage of a positive-axis silicon carbide crystal at one angle provided by an embodiment of the present application; FIG4 is a schematic diagram of the cleavage of a normal-axis silicon carbide crystal at another angle provided by an embodiment of the present application; FIG5 is a schematic diagram of the cleavage of an off-axis silicon carbide crystal at one angle provided by an embodiment of the present application; FIG6 is a schematic diagram of the cleavage of an off-axis silicon carbide crystal at another angle provided by an embodiment of the present application; FIG7 is a schematic diagram of a principle of a processing method provided by an embodiment of the present application; FIG8 is another schematic diagram of the principle of the processing method provided by one embodiment of the present application; FIG9 is a schematic structural diagram of a workpiece according to an embodiment of the present application and implementing the processing method of the present application; FIG10 is a schematic diagram of a processing method according to an embodiment of the present application; FIG11 is a schematic diagram of an ultrasonic focusing area in a processing method provided in one embodiment of the present application; FIG12 is a schematic diagram of a processing method provided by another embodiment of the present application; FIG13 is a schematic diagram of an ultrasonic focusing area in a processing method provided by another embodiment of the present application; FIG14 is a schematic diagram of ultrasonic processing of a workpiece according to a processing method provided in one embodiment of the present application; FIG15 is a schematic diagram of ultrasonic processing of a workpiece according to another embodiment of the present application; FIG16 is a schematic diagram of ultrasonic processing of a workpiece according to a processing method provided in another embodiment of the present application; FIG17a is a schematic diagram of an ultrasonic processing path of a processing method provided in one embodiment of the present application; FIG17 b is a schematic diagram of an ultrasonic processing path of a processing method provided in another embodiment of the present application; FIG18 is a schematic diagram of ultrasonic processing of the edge of a workpiece according to a processing method provided in one embodiment of the present application; FIG19 is a schematic diagram of a process of ultrasonically processing a workpiece according to a processing method provided in one embodiment of the present application; FIG20 is a schematic diagram of the complete process of ultrasonic processing of a workpiece according to a processing method provided in one embodiment of the present application; FIG21 is a schematic structural diagram of a processing device provided in one embodiment of the present application; FIG22 is a schematic structural diagram of a processing device provided in another embodiment of the present application; FIG23 is a schematic structural diagram of a crystal material stripping device provided in one embodiment of the present application; FIG24 is a schematic structural diagram of a processing device provided in one embodiment of the present application. DETAILED DESCRIPTION In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, this application is further described in detail below in conjunction with Figures 1 to 24 and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application. In the following description, specific details such as specific system structures and techniques are provided for purposes of illustration rather than limitation to facilitate a thorough understanding of the embodiments of the present application. However, it will be apparent to those skilled in the art that the present application may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid obscuring the description of the present application with unnecessary detail. It should be understood that when used in the present specification and the appended claims, the term "comprising" indicates the presence of described features, integers, steps, operations, elements and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or collections thereof. It will also be understood that the term "and / or" used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items. As used in this specification and the appended claims, the term "if" can be interpreted as "when" or "upon" or "in response to determining" or "in response to detecting," depending on the context. Similarly, the phrase "if it is determined" or "if [described condition or event] is detected" can be interpreted as meaning "upon determination" or "in response to determining" or "upon detection of [described condition or event]" or "in response to detecting [described condition or event]," depending on the context. In addition, in the description of the present application specification and the appended claims, the terms "first", "second", "third", etc. are only used to distinguish the descriptions and cannot be understood as indicating or implying relative importance. References to "one embodiment" or "some embodiments" in this specification mean that a particular feature, structure, or characteristic described in conjunction with that embodiment is included in one or more embodiments of the present application. Thus, phrases such as "in one embodiment," "in some embodiments," "in other embodiments," and "in other embodiments" appearing in various places in this specification do not necessarily refer to the same embodiment, but rather mean "one or more but not all embodiments," unless otherwise specifically emphasized. The terms "including," "comprising," "having," and variations thereof all mean "including but not limited to," unless otherwise specifically emphasized. The embodiments of the present application provide a processing method, specifically an ultrasonic processing method, or a crystal material processing method, or a wafer processing method, or a peeling method. The processing method provided in the embodiments of the present application is used to process a workpiece 100 having a crack layer 190. The workpiece 100 may be a crystalline material. The crystalline material may be silicon carbide or diamond. The silicon carbide material may be a columnar silicon carbide ingot or a thin silicon carbide wafer. A crack layer 190 of a workpiece 100 is located at a specified thickness position in the thickness direction H of the workpiece 100. The crack layer 190 has cracks 191. The specified thickness position can be a fixed value or a range of values. The cracks 191 can be microcracks or obvious cracks; microcracks are tiny cracks that are invisible to the naked eye, while obvious cracks are cracks that are visible to the naked eye. For silicon carbide materials, laser can be used to irradiate the silicon carbide materials, thereby causing cracks to appear in the silicon carbide materials. FIG1 is a schematic structural diagram of a cylindrical silicon carbide ingot provided in one embodiment of the present application. Referring to FIG1 , the embodiment of the present application will be described using a cylindrical silicon carbide ingot as an example. The cylindrical silicon carbide ingot 100 has a first surface 103 and a second surface 104 that are parallel to each other; in the height direction of the cylindrical silicon carbide ingot, the first surface 103 is the upper surface, and the second surface 104 is the lower surface. The first surface 103 can be a polished surface. The crystal material (such as a cylindrical silicon carbide ingot) is processed with a first positioning surface 101 and a second positioning surface 102. The function of the first positioning surface 101 and the second positioning surface 102 is to determine the crystal orientation of the crystal material. The length of the first positioning surface 101 is L1, and the length of the second positioning surface is L2, where L1>L2. Among them, the first positioning surface 101 of the crystal material is parallel to the X-axis direction, the second positioning surface 102 is parallel to the Y-axis direction, and the height direction of the crystal material is parallel to the Z-axis direction. Figure 2 is a schematic diagram of the structure of a silicon carbide crystal provided in an embodiment of the present application. Referring to Figure 2, silicon carbide crystal is a typical polytype with hundreds of crystal structures, one of which is 4H-SiC crystal. Commercial substrate materials are mainly 4H-SiC crystals, so 4H-SiC crystals are used as an example for illustration. The laser processing method provided in the embodiment of the present application is also applicable to other silicon carbide crystals (such as 6H-SiC, etc.). 2, 4H-SiC crystal has a hexagonal structure and contains three main cleavage planes: (0001) crystal plane (also called C plane), Crystal plane and Crystal planes; and crystal directions perpendicular to the corresponding crystal planes:

[0001] Crystalline direction (also called C-axis), Crystal orientation and Crystal orientation. Among the three main cleavage planes, the fracture toughness of the C plane (0001) is the smallest. Therefore, when a crack is generated in a silicon carbide crystal under external force, the crack tends to extend along the C plane (0001). According to the geometric structure of the crystal material, silicon carbide crystals are divided into on-axis silicon carbide crystals and off-axis silicon carbide crystals. FIG3 is a schematic diagram of the cleavage of an on-axis silicon carbide crystal at one angle provided by an embodiment of the present application. FIG4 is a schematic diagram of the cleavage of an on-axis silicon carbide crystal at another angle provided by an embodiment of the present application. Referring to FIG3 and FIG4, the first surface 103 of the on-axis silicon carbide crystal is parallel to the C-plane of the silicon carbide crystal. In addition, the crystal orientation Parallel to the first positioning plane 101 of the silicon carbide crystal, the crystal direction Parallel to the second orientation plane 102 of the silicon carbide crystal. Axis 201 represents an imaginary straight line perpendicular to the first surface 103 of the crystal. For a normal-axis silicon carbide crystal, axis 201 is parallel to the crystal's C-axis 210. When a cleavage crack is generated within the normal-axis silicon carbide crystal, the crack propagates along the C-plane (0001), and the debonding surface formed by the crack propagation is ultimately parallel to the first surface 103. FIG5 is a schematic diagram of the cleavage of an off-axis silicon carbide crystal at one angle provided in an embodiment of the present application. FIG6 is a schematic diagram of the cleavage of an off-axis silicon carbide crystal at another angle provided in an embodiment of the present application. Referring to FIG5 and FIG6, the first surface 103 of the off-axis silicon carbide crystal is not parallel to the C-plane (0001), and the first surface 103 and the C-plane (0001) form a small angle α, which is usually 4°. The first surface 103 of other off-axis crystal materials (such as gallium nitride) is also not parallel to the C-plane (0001). Among them, there are many C-planes inside the silicon carbide crystal, and each C-plane is parallel to each other. Axis 201 represents an imaginary straight line perpendicular to the first surface 103 of the crystal. Referring to FIG6, for the off-axis silicon carbide crystal, the axis 201 presents a 4° tilt angle α with the C-axis. When a cleavage crack forms inside an off-axis silicon carbide crystal, the crack propagates along the C-plane (0001), and the peeling surface formed by the crack propagation eventually presents a 4° tilt angle with the first surface 103. Laser irradiation of a silicon carbide ingot can form a crack layer with cracks in the silicon carbide ingot, but these cracks are misaligned in the thickness direction of the silicon carbide ingot. In order to peel a thin silicon carbide wafer from the silicon carbide ingot, the laser needs to be processed on the silicon carbide ingot multiple times to further propagate these cracks, thereby inducing these cracks to connect in the thickness direction of the silicon carbide ingot. In order to solve the above technical problems, the processing method provided in the embodiment of the present application includes step A1. Step A1: Ultrasonic waves are focused on the crack layer 190 of the workpiece 100, so that the crack 191 of the crack layer 190 expands. FIG7 is a schematic diagram of the principle of the processing method provided by one embodiment of the present application. FIG8 is another schematic diagram of the principle of the processing method provided by one embodiment of the present application. Referring to FIG7 and FIG8, in actual use, a focused acoustic field can be generated by using an arc-shaped piezoelectric ceramic sheet or multiple piezoelectric ceramic sheets distributed in a phased array to focus the ultrasonic wave 901 on the crack layer 190 of the workpiece 100. For example, along the thickness direction H of the workpiece 100, the ultrasonic wave 901 is transmitted from top to bottom to the crack layer 190 of the workpiece 100. 7 , there is a specified angle between the direction B in which the ultrasonic wave 901 is incident on the crack layer 190 of the workpiece 100 and the thickness direction H of the workpiece 100 . The specified angle is less than or equal to the critical incident angle of the ultrasonic wave, so that as much ultrasonic wave 901 as possible can be incident on the workpiece 100 . Referring to Figure 7, in order to reduce the attenuation of the ultrasonic wave 901 in the air, the workpiece 100 is immersed in the liquid medium 300. The ultrasonic wave is transmitted to the crack layer 190 of the workpiece 100 through the liquid medium 300, and the starting position of the ultrasonic wave 901 is in the liquid medium 300, so that the ultrasonic wave 901 continues to propagate in the liquid medium 300 after coming out of the ultrasonic focusing transducer 900 until it propagates to the workpiece 100. FIG9 is a structural intention of a workpiece provided by an embodiment of the present application and implementing the processing method of the present application. Referring to FIG7 and FIG9, when the ultrasonic wave 901 propagates through a medium with attenuation properties (i.e., the workpiece), an energy gradient is generated, which generates a force along the propagation direction on the workpiece 100. This force is called radiation force. The high-intensity focusing gain at the focus of the ultrasonic wave 901 will induce a nonlinear effect (the nonlinear effect can be induced by controlling the power density of the ultrasonic wave). Referring to FIG9, the nonlinear effect generates a shock wave and a stress gradient in the workpiece 100, causing the crack 191 of the workpiece 100 to expand. Moreover, the nonlinear effect caused by the focused ultrasound can generate additional secondary radiation force, which can further enhance this effect. When ultrasonic wave 901 is focused on crack layer 190 of workpiece 100, high-intensity ultrasonic energy exists within the thickness of crack layer 190. This ultrasonic energy is absorbed, reflected, and scattered by crack 191 (e.g., microcracks). During this process, the combined effects of the shock wave directly generated by ultrasonic wave 901, the radiation force generated by the original ultrasonic wave, and the radiation force of the subharmonic waves generated by the original ultrasonic wave cause crack 191 to significantly expand, as shown in FIG9 . It should be understood that the focus of the ultrasonic wave 901 has a certain depth. Specifically, the ultrasonic wave 901 focusing on the crack layer 190 of the workpiece 100 may be the ultrasonic wave 901 acting on the crack layer 190 within the focal depth range, and an error is allowed. The ultrasonic wave 901 can be focused on one or different locations of the crack layer 190 of the workpiece 100. Under the action of the ultrasonic wave 901, the crack 191 in the crack layer 190 will expand. For silicon carbide material, the crack 191 is distributed along the C-plane. Therefore, the crack 191 in the crack layer 190 will expand along the C-plane. There will be an expansion component along the thickness direction H of the silicon carbide ingot, and there may also be an expansion component along the lateral direction of the silicon carbide ingot (related to the aforementioned specified angle). Among them, the expansion component along the thickness direction H of the silicon carbide ingot is the primary expansion component. When ultrasonic wave 901 is focused on different locations of the crack layer 190 of the workpiece 100, cracks 191 at different locations of the crack layer 190 will propagate. Specifically, cracks 191 at different locations of the crack layer 190 will propagate toward cracks 191 at adjacent locations. Ultimately, cracks 191 at different locations of the crack layer 190 will propagate until they connect with adjacent cracks 191. Specifically, the focus of ultrasonic wave 901 can be moved relative to the workpiece 100 (for example, the workpiece 100 remains stationary while ultrasonic wave 901 moves; or the workpiece 100 remains stationary while ultrasonic wave 901 moves), thereby causing ultrasonic wave 901 to focus on different locations of the crack layer 190 of the workpiece 100. For a silicon carbide ingot, initially, crack 191 is misaligned in the thickness direction H of the silicon carbide ingot. Ultrasonic wave 901 focuses on workpiece 100, generating a nonlinear effect. Crack 191 propagates toward adjacent cracks 191, ultimately connecting with adjacent cracks 191 in the thickness direction H of the silicon carbide ingot. Specifically, ultrasonic wave 901 focuses on crack layer 190, exacerbating the propagation of crack 191 and thereby inducing the cracks 191 to connect in the thickness direction H of the silicon carbide ingot. According to the above content, it can be seen that by focusing the ultrasonic wave 901 on the crack layer 190 of the workpiece 100, under the combined action of the shock wave directly generated by the ultrasonic wave 901, the radiation force generated by the original ultrasonic wave, and the radiation force of the subharmonic generated by the original ultrasonic wave, the crack 191 in the crack layer 190 will significantly expand. Using the ultrasonic wave 901 for processing once can basically make the crack 191 in the crack layer 190 further expand, which can accelerate the expansion of the crack 191 and improve the processing efficiency. Depending on the actual situation (such as the properties of the material), the ultrasonic wave 901 can be used to process a position of the workpiece once or multiple times. Figure 10 is a schematic diagram of the machining process of a machining method according to an embodiment of the present application. Figure 11 is a schematic diagram of the ultrasonic wave focusing area of a machining method according to an embodiment of the present application. Referring to Figures 10 and 11, along the direction S of motion of ultrasonic wave 901 relative to workpiece 100, two adjacent areas focused by ultrasonic wave 901 overlap. This allows for better utilization of stress concentration areas caused by crack expansion induced by the previous area focused by ultrasonic wave, thereby improving machining efficiency. For example, referring to Figure 11, the area where the ultrasonic wave 901 is focused on the crack layer 190 of the workpiece 100 is called the focusing area; taking four focusing areas as an example, the first focusing area 601 and the second focusing area 602 are two adjacent areas, the second focusing area 602 and the third focusing area 603 are two adjacent areas, and the third focusing area 603 and the fourth focusing area 604 are two adjacent areas; the first focusing area 601 and the second focusing area 602 have overlapping parts, the second focusing area 602 and the third focusing area 603 have overlapping parts, and the third focusing area 603 and the fourth focusing area 604 have overlapping parts. Figure 12 is a schematic diagram of the machining process of another embodiment of the present application. Figure 13 is a schematic diagram of the focused area of ultrasound waves in another embodiment of the present application. Alternatively, referring to Figures 12 and 13, along the direction S of the movement of ultrasound waves 901 relative to the workpiece 100, a gap exists between two adjacent areas where ultrasound waves 901 are focused. For example, referring to FIG13 , taking four focus areas as an example, the first focus area 601 and the second focus area 602 are two adjacent areas, the second focus area 602 and the third focus area 603 are two adjacent areas, and the third focus area 603 and the fourth focus area 604 are two adjacent areas; there is a gap between the first focus area 601 and the second focus area 602, there is a gap between the second focus area 602 and the third focus area 603, and there is a gap between the third focus area 603 and the fourth focus area 604. The above processing method may further include step A2. Step A2: peeling off the sub-workpiece from the workpiece along the crack layer. As the focus of the ultrasonic wave 901 moves relative to the workpiece (e.g., a silicon carbide ingot), the ultrasonic wave 901 focuses on different locations on the workpiece 100. When the ultrasonic wave 901 focuses on a sufficient number of locations on the workpiece 100 (e.g., the locations on the workpiece where the ultrasonic wave is focused cover the entire crack layer), the cracks 191 at each location will be connected together in the thickness direction H of the workpiece 100. Referring to FIG. 9 , it is possible to separate sub-workpieces from the workpiece 100 along the crack layer 190 (e.g., separate wafers from a silicon carbide ingot). Specifically, after the ultrasonic wave 901 completes the processing of the workpiece 100 , an adsorption head may be used to adsorb the top surface of the workpiece 100 , thereby separating a sub-workpiece (such as a wafer) from the workpiece 100 with the crack layer 190 as the boundary. It should be understood that if the workpiece is relatively small, the ultrasonic wave is focused on a fixed position of the workpiece to cause the crack to expand, and a sub-workpiece can be peeled off from the workpiece along the crack layer. FIG14 is a schematic diagram of ultrasonic processing of a workpiece in a processing method according to an embodiment of the present application. Referring to FIG14 , step A1 (focusing the ultrasonic wave on the crack layer of the workpiece, causing the crack in the crack layer to expand) can be specifically performed as follows: the ultrasonic wave moves relative to the workpiece from one point in the crack layer to another point in the crack layer, and focuses on different positions in the crack layer of the workpiece, causing the crack in the crack layer to expand. In other words, the ultrasonic wave moves relative to the workpiece between two points in the crack layer and focuses on different positions in the crack layer of the workpiece, causing the crack in the crack layer to expand. 10 , one of the two points may be at the edge 199 of the crack layer 190, and the other may be at the region 198 enclosed by the edge 199 of the crack layer 190 (referred to as a designated internal point). Alternatively, both points may be at the edge 199 of the crack layer 190, or at the region 198 enclosed by the edge 199 of the crack layer 190. 14 , every two points of the crack layer 190 form a group of points. The crack layer 190 may be set to have M groups of points, where M is a positive integer. Referring to FIG. 14 , starting from i = 1 to i = M, where i is a positive integer, ultrasonic wave 901 moves relative to workpiece 100 between two points in the i-th group of points in crack layer 190. Alternatively, the ultrasonic wave moves relative to the workpiece from one point in the i-th group of points in the crack layer to another point in the i-th group of points in the crack layer, focusing on different locations in the crack layer 190 of workpiece 100 and causing crack 191 in crack layer 190 to propagate. Ultrasonic wave 901 moves relative to workpiece 100 between two points in each group of points, focusing on multiple locations in the crack layer 190 of workpiece 100. Referring to Figure 14, in some embodiments, each point in the M group of points is a point on the edge 199 of the crack layer 190, then the ultrasonic wave 901 moves relative to the workpiece 100 between two points on the edge 199 of the crack layer 190 and focuses on different positions of the crack layer 190 of the workpiece 100, causing the crack 191 of the crack layer 190 to expand. For example, referring to Figure 14, the first group of points are edge point M11 and edge point M12, the second group of points are edge point M21 and edge point M22, and the last group of points are edge point Mi1 and edge point Mi2; the ultrasonic wave 901 moves relative to the workpiece 100 between edge point M11 and edge point M12 and focuses on different positions of the crack layer 190 of the workpiece 100; after the ultrasonic wave 901 completes processing between edge point M11 and edge point M12, it changes position and moves relative to the workpiece 100 between edge point M21 and edge point M22 and focuses on different positions of the crack layer 190 of the workpiece 100; after the ultrasonic wave 901 completes processing between edge point M21 and edge point M22, it changes position and continues processing until it reaches between edge point Mi1 and edge point Mi2. Figure 15 is a schematic diagram of ultrasonic processing of a workpiece according to another embodiment of the present application. Figure 16 is a schematic diagram of ultrasonic processing of a workpiece according to yet another embodiment of the present application. Referring to Figures 15 and 16, in some embodiments, the line L connecting each set of points passes through a designated internal point O of the crack layer 190. The designated internal point O is a point in the area 198 enclosed by the edge 199 of the crack layer 190. Figure 17a is a schematic diagram of an ultrasonic processing path in a processing method according to an embodiment of the present application. Referring to Figure 17a , the lines L connecting the various groups of points can be considered the processing path of ultrasonic wave 901 on workpiece 100. When the lines L connecting the various groups of points pass through the same designated internal point O of crack layer 190 , the processing path of ultrasonic wave 901 on workpiece 100 forms a spoke-shaped processing path 800 . FIG17 b is a schematic diagram of an ultrasonic processing path of a processing method provided in another embodiment of the present application. Referring to FIG17 b , the processing path of the ultrasonic wave 901 on the workpiece 100 can also be a spiral processing path 800 . FIG18 is a schematic diagram of ultrasonic processing of a workpiece edge according to a processing method provided by an embodiment of the present application. Referring to FIG18 , edge 199 is a relatively fragile area of workpiece 100 (e.g., a silicon carbide ingot). The spoke-shaped processing path allows ultrasonic wave 901 to process workpiece 100 uniformly (e.g., once) between two points in each group of points. This avoids damage to the workpiece edge caused by continuous processing near the edge when processing between two points in a given group of points, thereby improving processing quality. 15 , the aforementioned designated internal point may be the center (such as the center of gravity or the center of a circle) of an area surrounded by the edge of the crack layer. 12 , in actual production, for a columnar silicon carbide ingot, at least a portion of the edge 199 of its cross section is an arc, so at least a portion of the edge 199 of the crack layer 190 is also an arc, and the aforementioned designated internal point O can be the center of the arc. Referring to Figure 14, M is an integer greater than 1, and the line L connecting the i-1th group of points and the line L connecting the i-th group of points are two adjacent lines. In this way, the ultrasonic wave 901 processes the workpiece 100 in the order of the geometric positions of each group of points in the crack layer 190, and can always utilize the stress concentration area caused by the crack expansion caused by the previous ultrasonic focusing, so as to efficiently complete the crack expansion of the entire crack layer 190. FIG19 is a schematic diagram of the process of ultrasonic processing of a workpiece according to a processing method provided in an embodiment of the present application. FIG20 is a schematic diagram of the complete process of ultrasonic processing of a workpiece according to a processing method provided in an embodiment of the present application. Referring to FIG19 and FIG20, in some embodiments, one point in each group of points is a point at the edge 199 of the crack layer 190, and another point in each group of points is a designated internal point O of the crack layer 190, and the designated internal point O in each group of points is the same (for example, they are all the centers of the areas surrounded by the edge of the crack layer). For each group of points, the ultrasonic wave 901 moves relative to the workpiece 100 between the point at the edge 199 of the crack layer 190 and the designated internal point O of the crack layer 190, or in other words, the ultrasonic wave moves relative to the workpiece from one point at the edge of the crack layer and the designated internal point of the crack layer to another point at the edge and the designated internal point, and focuses on different positions of the crack layer 190 of the workpiece 100, so that the crack 191 in the crack layer 190 expands. Referring to Figures 19 and 20 , N points can be set along the edge 199 of the crack layer 190, where N is a positive integer. Starting from P = 1 to P = N, where P is a positive integer, ultrasonic wave 901 moves relative to the workpiece 100 between the Pth point on the edge 199 of the crack layer 190 and a designated internal point O of the crack layer 190. In other words, the ultrasonic wave moves relative to the workpiece from one point between the Pth point on the edge of the crack layer and the designated internal point of the crack layer to another point between the Pth point and the designated internal point, focusing on different locations of the crack layer 190 of the workpiece 100, causing the crack 191 in the crack layer 190 to expand. Thus, the ultrasonic wave processing path also forms a spoke-shaped processing path. For example, referring to Figures 19 and 20, the ultrasonic wave 901 moves relative to the workpiece 100 between the edge point P1 and the specified internal point O and focuses on different positions of the crack layer 190 of the workpiece 100; after the ultrasonic wave 901 completes processing between the edge point P1 and the specified internal point O, it changes its position in the specified direction F (for example, clockwise) and moves relative to the workpiece 100 between the edge point P2 and the specified internal point O and focuses on different positions of the crack layer 190 of the workpiece 100; after the ultrasonic wave 901 completes processing between the edge point P2 and the specified internal point O, it changes its position in the specified direction F (for example, counterclockwise or clockwise) and continues processing until it reaches between the edge point P and the specified internal point O. N is an integer greater than 1, and the P-1 point (i.e., edge point P-1) and the P point (i.e., edge point P) are two adjacent points on the edge 199 of the crack layer 190. In this way, the ultrasonic wave 901 processes the workpiece in the order in which the points are adjacent to each other on the edge 199, and can always utilize the stress concentration area brought about by the crack expansion caused by the previous ultrasonic wave focusing, thereby efficiently completing the crack expansion of the entire crack layer. The processing method provided in the embodiment of the present application utilizes ultrasound to focus on the workpiece, so that cracks in the crack layer expand, which can accelerate the expansion of the cracks, improve the processing quality, and improve the processing efficiency. It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application. Corresponding to the method described in the above embodiment, Figure 21 shows a structural block diagram of the processing device provided in the embodiment of the present application. For the sake of convenience of explanation, only the parts related to the embodiment of the present application are shown. 21 , an embodiment of the present application provides a processing device for processing a workpiece having a crack layer, wherein the crack layer is located at a specified thickness position in the thickness direction of the workpiece and has cracks; the processing device includes an ultrasonic focusing module 1A. The ultrasonic focusing module 1A is used to emit ultrasonic waves focused on the crack layer of the workpiece, so that the crack in the crack layer expands. In some embodiments, the ultrasonic focusing module 1A is specifically used to emit ultrasonic waves focused on different positions of a crack layer of a workpiece, so that the crack in the crack layer expands. In some embodiments, the ultrasonic focusing module 1A is specifically used to emit ultrasonic waves focused on different positions of a crack layer of a workpiece, so that cracks at different positions of the crack layer extend toward cracks at adjacent positions. In some embodiments, the ultrasonic focusing module 1A is specifically used to emit ultrasonic waves focused on different positions of a crack layer of a workpiece, so that cracks at different positions of the crack layer expand to connect with cracks at adjacent positions. In some embodiments, at least two points can be set in the crack layer; the above-mentioned ultrasonic focusing module 1A is specifically used to: emit ultrasonic waves from one point of the crack layer to another point of the crack layer relative to the workpiece, and focus on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands. In some embodiments, two points of the crack layer form a group of points, and the crack layer can be set to M groups of points, where M is a positive integer; the above-mentioned ultrasonic focusing module 1A is specifically used to: from i equals 1 to i equals M, emit ultrasonic waves from a point of the i-th group of points in the crack layer to move relative to the workpiece to another point of the i-th group of points, and focus on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, and i is a positive integer. In some embodiments, the ultrasonic focusing module 1A is specifically used to: emit ultrasonic waves from a point on the edge of the crack layer and a designated internal point of the crack layer to move relative to the workpiece to a point on the edge and another point on the designated internal point, and focus on different positions of the crack layer of the workpiece to expand the crack in the crack layer. The aforementioned designated internal point is a point in the area surrounded by the edge of the crack layer. In some embodiments, N points can be set on the edge of the crack layer, where N is a positive integer; the above-mentioned ultrasonic focusing module 1A is specifically used to: start from P equals 1 to P equals N, emit ultrasonic waves from the Pth point on the edge of the crack layer and a point between the specified internal points of the crack layer relative to the workpiece to the Pth point and another point between the specified internal points, and focus on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, and P is a positive integer. In some embodiments, the ultrasonic focusing module 1A is specifically used to emit ultrasonic waves focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer expand to connect with the cracks at adjacent positions in the thickness direction of the workpiece. Figure 22 is a schematic structural diagram of a processing device provided in another embodiment of the present application. Referring to Figure 22, the processing device may further include a stripping module 2A. The stripping module 2A is used to strip a sub-workpiece from the workpiece along the crack layer. It should be noted that the information interaction, execution process, etc. between the above-mentioned devices / units are based on the same concept as the method embodiment of this application. Their specific functions and technical effects can be found in the method embodiment section and will not be repeated here. The embodiment of the present application further provides a device, which is manufactured by the processing method provided in any of the above embodiments. The aforementioned device can be a silicon carbide wafer or a silicon carbide device. The device may have spoke-shaped processing marks. Figure 23 is a schematic diagram of the structure of a crystal material stripping apparatus provided in one embodiment of the present application. Referring to Figure 23 , another embodiment of the present application provides a crystal material stripping apparatus for processing a crystal material having a crack layer; the crack layer is located at a predetermined thickness position along the thickness direction of the crystal material; the crack layer has cracks; and the crystal material may be silicon carbide or gallium nitride. The crystal material stripping device provided in the embodiment of the present application includes an ultrasonic focusing unit 291 and a stripping unit 292 . The ultrasonic focusing unit 291 is used to emit ultrasonic waves focused on the crack layer of the workpiece, so that the crack in the crack layer expands. The stripping unit 292 is used to strip a wafer from the crystal material along the crack layer. The ultrasonic focusing unit 291 may include the ultrasonic focusing module 1A described above. The stripping unit 292 may include the above-mentioned stripping module 2A. Figure 24 is a schematic diagram of the structure of a processing device provided in one embodiment of the present application. As shown in Figure 24, the processing device 24 of this embodiment includes: at least one processor 240 (only one is shown in Figure 24), a memory 241, and a computer program 242 stored in the memory 241 and executable by the at least one processor 240. When the processor 240 executes the computer program 242, the steps of the above-mentioned method embodiments are implemented. The processing device 24 may include, but is not limited to, a processor 240 and a memory 241. Those skilled in the art will appreciate that FIG24 is merely an example of a processing device and does not limit the processing device. The processing device may include more or fewer components than shown in the figure, or may combine certain components or different components. For example, the processing device may also include input and output devices, network access devices, buses, etc. The processor 240 may be a central processing unit (CPU), or other general-purpose processors, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor. In some embodiments, the memory 241 may be an internal storage unit of the processing device 24, such as a hard disk or memory of the processing device. In other embodiments, the memory 241 may also be an external storage device of the processing device, such as a plug-in hard disk equipped on the processing device, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. Furthermore, the memory 241 may also include both an internal storage unit of the processing device and an external storage device. The memory 241 is used to store an operating system, application programs, a boot loader, data, and other programs, such as the program code of a computer program. The memory 241 may also be used to temporarily store data that has been output or is about to be output. For example, the computer program 242 may be divided into one or more modules / units, one or more of which are stored in the memory 241 and executed by the processor 240 to implement the present application. The one or more modules / units may be a series of computer program instruction segments capable of performing specific functions, and the instruction segments are used to describe the execution process of the computer program 242 in the processing equipment 24. Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. If the aforementioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present application implements all or part of the processes in the above-mentioned embodiment method, which can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a computer-readable storage medium; when the computer program is executed by the processor, it can implement the steps of the above-mentioned various method embodiments. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. Computer-readable media include: any entity or device that can carry computer program code to a device / terminal device, recording medium, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal and software distribution medium. For example, USB flash drive, mobile hard disk, magnetic disk or optical disk, etc. In some jurisdictions, according to legislation and patent practice, computer-readable media cannot be electric carrier signals and telecommunication signals. An embodiment of the present application further provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, the steps in the above-mentioned various method embodiments can be implemented. An embodiment of the present application provides a computer program product. When the computer program product runs on a terminal device, the terminal device can implement the steps in the above-mentioned various method embodiments. In the above embodiments, the description of each embodiment has its own focus. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant description of other embodiments. Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application. In the embodiments provided in this application, it should be understood that the disclosed devices / equipment and methods can be implemented in other ways. For example, the device / equipment embodiments described above are merely schematic. For example, the division of the modules or units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms. The units described above as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected according to actual needs to achieve the purpose of the solution of this embodiment. The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present application, and should all be included in the scope of protection of the present application.

Claims

1. A processing method, characterized in that: Used for processing a workpiece having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the workpiece, and the crack layer has cracks; The method comprises: The ultrasonic waves are focused on the crack layer of the workpiece, so that the crack in the crack layer propagates.

2. The processing method according to claim 1, wherein The ultrasonic wave is focused on the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks in the crack layer are extended.

3. The processing method according to claim 2, characterized in that The ultrasonic waves are focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer extend toward the cracks at adjacent positions.

4. The processing method according to claim 2, characterized in that: The ultrasonic waves are focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer are extended to connect with the cracks at adjacent positions.

5. The processing method according to claim 2, characterized in that: The crack layer can be set at least two points; The ultrasonic wave is focused on the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: The ultrasonic wave moves from one point of the crack layer to another point of the crack layer relative to the workpiece and focuses on different positions of the crack layer of the workpiece, so that the crack of the crack layer expands.

6. The processing method according to claim 5, characterized in that: The two points of the crack layer form a group of points, and the crack layer can be set to M groups of points, where M is a positive integer; The ultrasonic wave moves from one point of the crack layer relative to the workpiece to another point of the crack layer and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: Starting from i equal to 1 to i equal to M, the ultrasonic wave moves from one point of the i-th group of points of the crack layer relative to the workpiece to another point of the i-th group of points, and focuses on different positions of the crack layer of the workpiece, so that the crack of the crack layer expands, and i is a positive integer.

7. The processing method according to claim 6, characterized in that: One point in each group of points is a point on the edge of the crack layer, another point in each group of points is a designated internal point of the crack layer, and the designated internal points in each group of points are the same, and the designated internal point is a point in the area surrounded by the edge of the crack layer.

8. The processing method according to claim 6, wherein: The lines connecting each group of points pass through a designated internal point of the crack layer, and the designated internal point is a point in the area surrounded by the edge of the crack layer.

9. The processing method according to claim 6, characterized in that: M is an integer greater than 1, and the line connecting the i-1th group of points and the line connecting the ith group of points are two adjacent lines.

10. The processing method according to claim 5, characterized in that: The ultrasonic wave moves from one point of the crack layer relative to the workpiece to another point of the crack layer and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: The ultrasonic wave moves relative to the workpiece from one point on the edge of the crack layer and a designated internal point of the crack layer to another point on the edge and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands. The designated internal point is a point in the area surrounded by the edge of the crack layer.

11. The processing method according to claim 10, characterized in that: The edge of the crack layer can be set to N points, where N is a positive integer; The ultrasonic wave moves relative to the workpiece from one point on the edge of the crack layer and a designated internal point of the crack layer to another point on the edge and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, specifically: Starting from P equal to 1 to P equal to N, the ultrasonic wave moves relative to the workpiece from the Pth point on the edge of the crack layer and a designated internal point of the crack layer to another point between the Pth point and the designated internal point, and focuses on different positions of the crack layer of the workpiece, so that the crack in the crack layer expands, and P is a positive integer.

12. The processing method according to claim 11, characterized in that: N is an integer greater than 1, and the P-1th point and the Pth point are two adjacent points on the edge of the crack layer.

13. The processing method according to claim 2, characterized in that: Along the direction in which the ultrasonic wave moves relative to the workpiece, two adjacent areas where the ultrasonic wave is focused have overlapping parts; Alternatively, along the direction in which the ultrasonic wave moves relative to the workpiece, a gap exists between two adjacent areas where the ultrasonic wave is focused.

14. The processing method according to claim 2, wherein: The ultrasonic waves are focused on different positions of the crack layer of the workpiece to cause the crack in the crack layer to expand, specifically: The ultrasonic waves are focused on different positions of the crack layer of the workpiece, so that the cracks at different positions of the crack layer are extended to be connected with the cracks at adjacent positions in the thickness direction of the workpiece.

15. The processing method according to claim 2, wherein: The ultrasonic processing path is a spoke-shaped processing path or a spiral processing path.

16. The processing method according to claim 6, characterized in that: At least a portion of the edge of the crack layer is an arc, and the designated internal point is the center of the arc.

17. The processing method according to claim 6, characterized in that: The designated interior point is the center of an area surrounded by the edges of the crack layer.

18. The processing method according to claim 1, wherein: The ultrasonic waves are transmitted from top to bottom to the crack layer of the workpiece along the thickness direction of the workpiece.

19. The processing method according to claim 1, wherein: There is a specified angle between the direction in which the ultrasonic wave is incident on the crack layer of the workpiece and the thickness direction of the workpiece, and the specified angle is less than or equal to a critical incident angle of the ultrasonic wave.

20. The processing method according to claim 1, wherein: The workpiece is immersed in a liquid medium, the ultrasonic wave is transmitted to the crack layer of the workpiece through the liquid medium, and a starting position of the ultrasonic wave is in the liquid medium.

21. The processing method according to claim 1, characterized in that: The crack layer is formed by irradiating the workpiece with a laser; the workpiece has a C-surface; and the cracks are distributed along the C-surface.

22. The processing method according to any one of claims 1 to 21, characterized in that: The processing method further comprises: A sub-workpiece is peeled off from the workpiece along the crack layer.

23. A processing device, characterized in that: Used for processing a workpiece having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the workpiece, and the crack layer has cracks; The device comprises: The ultrasonic focusing module is used to emit ultrasonic waves focused on the crack layer of the workpiece, so that the crack of the crack layer expands.

24. A device, characterized in that Manufactured by the processing method according to any one of claims 1 to 22.

25. The device according to claim 24, wherein The device has spoke-shaped machining marks.

26. A processing equipment, characterized in that The method comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processing method according to any one of claims 1 to 22 is implemented when the processor executes the computer program.

27. A crystal material stripping device, characterized in that: Used for processing a crystal material having a crack layer, wherein the crack layer is located at a specified thickness position in a thickness direction of the crystal material, and the crack layer has cracks; The crystal material stripping device comprises: an ultrasonic focusing unit, configured to emit ultrasonic waves focused on the crack layer of the workpiece, so as to cause the crack in the crack layer to expand; A stripping unit is used to strip a wafer from the crystal material along the crack layer.

28. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the processing method according to any one of claims 1 to 22 is implemented.

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