Solid-state imaging device

Abstract

[PROBLEM] A correction parameter of crosstalk is accurately acquired. [SOLUTION] A solid-state imaging device according to the present invention includes a light-receiving pixel region, a light-shielding pixel region, and a signal processing circuit. In the light-receiving pixel region, at least two light-receiving pixels among a plurality of light-receiving pixels share a photoelectric conversion region, and the plurality of light-receiving pixels are arranged in a two-dimensional array. Around the light-receiving pixel region, the light-shielding pixel region shares the photoelectric conversion region with the light-receiving pixels belonging to the light-receiving pixel region. Also, a plurality of light-shielding pixels shielded from light are arranged in the light-shielding pixel region. In addition, the light-shielding pixel region includes a defective pixel formed differently from the other light-shielding pixels. The signal processing circuit acquires a parameter for correcting crosstalk in the light-receiving pixel region on the basis of an output from at least one light-shielding pixel arranged around the defective pixel.

Description

solid-state imaging device

[0001] The present disclosure relates to a solid-state imaging device.

[0002] Image sensors using indium gallium arsenide (InGaAs) are widely used today. Because these InGaAs sensors lack pixel isolation in the photoelectric conversion film, photoelectrically converted carriers tend to move to adjacent pixels, resulting in poor crosstalk. However, introducing pixel isolation into compound image sensors can worsen characteristics such as dark current and white spots. Therefore, one method involves creating aperture pixels in the light-shielded area around the pixel area to obtain the amount of crosstalk and use it for correction.

[0003] However, while the method of arranging aperture pixels can obtain crosstalk correction parameters with high accuracy when an appropriate amount of light is incident on the entire light-receiving area of ​​the image sensor, it may not be possible to obtain sufficient output in scenes where there is almost no light around the periphery of the screen, making it impossible to obtain the necessary correction information.

[0004] Japanese Patent Application Laid-Open No. 2009-124282

[0005] Therefore, one of the non-limiting problems to be solved by the embodiments of the present disclosure is to accurately obtain crosstalk correction parameters. The problem to be solved by the embodiments of the present disclosure can also be, as some further non-limiting examples, a problem corresponding to the effects described in the embodiments. In other words, a problem corresponding to at least one of the effects described in the description of the embodiments of the present disclosure can be the problem to be solved by the present disclosure.

[0006] According to one embodiment, a solid-state imaging device includes a light-receiving image region, a light-shielding image region, and a signal processing circuit. In the light-receiving pixel region, at least two of a plurality of light-receiving pixels share a photoelectric conversion region, and the plurality of light-receiving pixels are arranged in a two-dimensional array. The light-shielding pixel region includes a plurality of light-shielding pixels arranged around the light-receiving pixel region, the light-shielding pixels sharing the photoelectric conversion region with the light-receiving pixels belonging to the light-receiving pixel region and being shielded from light. The light-shielding pixel region also includes a defective pixel formed in the light-shielding pixel region with a different configuration from the other light-shielding pixels. The signal processing circuit acquires a parameter for correcting crosstalk in the light-receiving pixel region based on an output from at least one of the light-shielding pixels arranged around the defective pixel.

[0007] The defective pixel may have a defect on the light-receiving surface side of the photoelectric conversion region.

[0008] The defective pixel may have a defect on the opposite side of the photoelectric conversion area to the light receiving surface.

[0009] The photoelectric conversion region may be formed of indium gallium arsenide, the light receiving surface may be formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface may be shielded from light by a light-shielding structure.

[0010] A plurality of the defective pixels may be provided, and the signal processing circuit may acquire the parameters based on outputs from the light-shielded pixels arranged around each of the plurality of defective pixels.

[0011] At least one of the plurality of defective pixels may be formed in an area different from the areas of the other defective pixels.

[0012] The light-shielding region may further include at least one aperture pixel that does not have the light-shielding structure.

[0013] The signal processing circuit may obtain the parameters based on outputs of the defective pixel and the aperture pixel.

[0014] According to one embodiment, a solid-state imaging device includes a light-receiving pixel area, a light-shielding pixel area, and a signal processing circuit. In the light-receiving pixel area, at least two of the light-receiving pixels share a photoelectric conversion area, and the plurality of light-receiving pixels are arranged in a two-dimensional array. The light-shielding pixel area includes a plurality of light-shielding pixels that share the photoelectric conversion area with the light-receiving pixels belonging to the light-receiving pixel area and are shielded from light, and the light-shielding pixel area also includes charge-injection pixels, into which electric charge is injected, among the light-shielding pixels. The signal processing circuit acquires a parameter for correcting crosstalk in the light-receiving pixel area based on an output from at least one of the light-shielding pixels arranged in the vicinity of the charge-injection pixel.

[0015] The charge injection pixel may be formed by injecting charges into a diffusion layer that detects carriers generated in the photoelectric conversion region.

[0016] The charge injection pixel may be injected with charge from a circuit side that reads out an output from a diffusion layer that detects the carriers.

[0017] The photoelectric conversion region may be formed of indium gallium arsenide, the light receiving surface may be formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface may be shielded from light by a light-shielding structure.

[0018] A plurality of the charge injection pixels may be provided, and the signal processing circuit may acquire the parameters based on outputs from the light-shielded pixels arranged around each of the plurality of charge injection pixels.

[0019] At least one of the charge injection pixels may be injected with a different amount of charge than other of the charge injection pixels.

[0020] The light-shielding region may further include at least one aperture pixel that does not have the light-shielding structure.

[0021] The light-shielded region may further include a defective pixel formed with a different configuration from the other light-shielded pixels.

[0022] The light-shielding region may further include at least one aperture pixel that does not have the light-shielding structure.

[0023] 1 is a block diagram schematically showing an example of a solid-state imaging device according to an embodiment. FIG. 1 is a plan view schematically showing an example of a pixel array according to an embodiment. FIG. 2 is a cross-sectional view schematically showing an example of a configuration of light-receiving pixels and light-shielding pixels according to an embodiment. FIG. 2 is a plan view schematically showing an example of an arrangement of defective pixels according to an embodiment. FIG. 3 is a diagram showing an example of a structure of a defective pixel according to an embodiment. FIG. 4 is a diagram showing an example of a process for forming the structure of FIG. 5. FIG. 5 is a diagram showing an example of a process for forming the structure of FIG. 5. FIG. 4 is a diagram showing an example of a process for forming the structure of FIG. 5. FIG. 5 is a diagram showing an example of a structure of a defective pixel according to an embodiment. FIG. 9 is a diagram showing an example of a process for forming the structure of FIG. 9. FIG. 9 is a diagram showing an example of a process for forming the structure of FIG. 9. FIG. 9 is a diagram showing an example of an arrangement of defective pixels according to an embodiment. FIG. 10 is a diagram showing an example of the structure of a defective pixel according to an embodiment. FIG. 11 is a diagram showing an example of the structure of a defective pixel according to an embodiment. FIG. 12 is a diagram showing an example of the structure of a defective pixel according to an embodiment. FIG. 13 is a diagram showing an example of the structure of a defective pixel and an aperture pixel according to an embodiment. A flowchart showing processing according to an embodiment. FIG. 14 is a block diagram showing an example of a general configuration of a vehicle control system. FIG. 15 is an explanatory diagram showing an example of installation positions of an outside vehicle information detection unit and an imaging unit.

[0024] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The drawings are used for explanation purposes, and the shape, size, and size ratio of each component in an actual device do not necessarily have to be the same as those shown in the drawings. Furthermore, since the drawings are simplified, components necessary for implementation other than those shown in the drawings are also assumed to be appropriately provided.

[0025] 1 is a block diagram schematically illustrating a portion of the configuration of a solid-state imaging device according to one embodiment. The solid-state imaging device 1 includes a pixel array 10, a control circuit 12, a first scanning circuit 14, a second scanning circuit 16, and a signal processing circuit 18. The solid-state imaging device 1 may also include a power supply circuit and the like for appropriately controlling each of the components. The solid-state imaging device 1 is a device that outputs a signal based on light irradiated onto pixels 100 in the pixel array 10.

[0026] The pixel array 10 is a region in which pixels 100 are arranged in a two-dimensional array. Each pixel 100 includes at least a light-receiving element and a pixel circuit that outputs a signal based on the intensity of light irradiated onto the light-receiving element. Within the pixel array 10, the pixels 100 are arranged in an array along a first direction (e.g., a line direction) and a second direction (e.g., a column direction) that intersects with the first direction.

[0027] The control circuit 12 is a circuit that controls light reception in the pixel array 10 and output from the pixel array 10. The control circuit 12 performs drive control to output from appropriate pixels 100 at appropriate timing, for example, by sending control signals to the first scanning circuit 14 and the second scanning circuit 16.

[0028] The first scanning circuit 14 is a circuit that selects pixels 100 that belong to a line along a first direction among the pixels 100. The first scanning circuit 14 performs control so that the pixels 100 that belong to the same line can be driven, for example, by control lines 140 arranged along the line.

[0029] The second scanning circuit 16 is a circuit that drives the pixels 100 that belong to a column along the second direction of the pixels 100. The second scanning circuit 16 controls, for example, the pixels that belong to a line that is selected and made drivable by the first scanning circuit 14 via control lines 160 arranged along the column, thereby outputting signals from each pixel 100 at appropriate timing.

[0030] The pixel 100 is driven and controlled via the first scanning circuit 14 and the second scanning circuit 16 to output a signal based on the intensity of the received light via the signal line 180 to the signal processing circuit 18 at an appropriate timing.

[0031] The signal processing circuit 18 is a circuit that converts the signals output from each pixel 100 into signals of an appropriate format and outputs the signals. The signal processing circuit 18 may include, for example, an analog-to-digital converter (ADC). An ADC may be provided for each pixel 100, for each pixel 100 belonging to a predetermined region of the pixel array 10, or for each column. In addition to this, the signal processing circuit 18 may include, for example, a circuit that converts the output digital signals into image signals.

[0032] The signal output from the signal processing circuit 18 is output through appropriate circuitry for storage, etc. As a non-limiting example, the signal output from the signal processing circuit 18 is output through an image processing circuit to be converted into a format suitable for subsequent processing or viewing.

[0033] 2 is a plan view schematically illustrating an example of a pixel array 10 according to an embodiment. The pixel array 10 includes a light-receiving pixel region 20 and a light-shielding pixel region 22. The light-receiving pixel region 20 and the light-shielding pixel region 22 each include the pixels 100 shown in FIG. 1. The pixels 100 include light-receiving pixels 200 that acquire image data from the intensity of received light, and light-shielding pixels 220 that operate as dummy pixels whose received light intensity does not directly contribute to image data.

[0034] The light-receiving pixel region 20 is a region for acquiring output in a region for forming image information output by the solid-state imaging device 1, and is formed by arranging a plurality of light-receiving pixels 200 in a two-dimensional array.

[0035] The light receiving pixel 200 converts the light received from the incident surface into carriers, for example, electric charges (holes), in the photoelectric conversion region, and detects these carriers in the diffusion region to output a signal corresponding to the intensity of the light received for each region (pixel).

[0036] The light-shielding pixel region 22 is a region formed in the region surrounding the light-receiving pixels 200, and is formed by arranging a plurality of light-shielding pixels 220 that do not directly output image information in a two-dimensional array.

[0037] The light-shielding pixel 220 is, for example, a pixel formed by shielding the light-receiving surface side, i.e., the surface other than the diffusion layer, of a configuration similar to that of the light-receiving pixel 200. The light-shielding pixel 220 is formed, for example, by covering the light-receiving surface side of the light-receiving pixel 200 with a light-shielding structure. The light-shielding structure may be, for example, a metal layer (metal film) made of W, Al, Cu, or the like, or may be a light-shielding film made of a semiconductor or an insulator.

[0038] The pixels 100, i.e., the light-receiving pixels 200 and the light-shielding pixels 220, may be pixels having, for example, indium gallium arsenide (InGaAs) as a photoelectric conversion region, which is a light-receiving region. As another example, the solid-state imaging device 1 can perform the same processing as the embodiment of the present disclosure as long as the photoelectric conversion region is shared across multiple pixels 100 in the pixel array 10.

[0039] Although the following description focuses on InGaAs pixels, the embodiments are not limited to this. Note that materials other than InGaAs (e.g., indium phosphide (InP) forming the light-receiving surface of InGaAs) can be similarly changed to other appropriate material combinations. Furthermore, the conductivity types of the respective semiconductor layers, diffusion layers, etc. can also be appropriately changed.

[0040] 3 is a cross-sectional view schematically illustrating an example of the configuration of a light-sensitive pixel 200 and a light-shielding pixel 220 according to an embodiment. This Fig. 3 shows, for example, a cross section taken along the line AA in Fig. 2.

[0041] The vertical dashed line indicates the boundary between the light-receiving pixel region 20 and the light-shielding pixel region 22. The horizontal dashed line indicates the boundary between the InGaAa film and the silicon (Si) substrate.

[0042] An antireflection film 300 is provided on the upper surface, which is a predetermined surface of the light-receiving pixel region 20. The antireflection film 300 is a film that suppresses reflection of light incident on the photoelectric conversion region formed by the InP layer 302 and the InGaAs layer 306. The antireflection film 300 is formed of, for example, an insulator, but is not limited to this and may be formed of a semiconductor layer or a conductor layer. When formed of a semiconductor or a conductor, an appropriate insulating film may be provided between the antireflection film 300 and the InP layer 302.

[0043] The compound substrate 30 is a layer including a photoelectric conversion region formed of InGaAs. Photoelectric conversion occurs in this layer, generating carriers according to the intensity of incident light. These carriers are detected by a diffusion layer or an electrode formed in the InGaAs layer and / or the InP layer, and a signal according to the intensity of the incident light is output.

[0044] The Si substrate 32 is a substrate made of Si. The Si substrate 32 may include, for example, a circuit layer that processes signals acquired via electrodes from the compound substrate 30. In addition, circuits related to signal processing, image processing, etc. of the solid-state imaging device 1 may be formed on the Si substrate 32.

[0045] The InP layer 302 is a layer that forms a light-receiving surface and is formed on the light-receiving side, which is a predetermined surface of the InGaAs layer 306. The InP layer 302 is made of, for example, n+ type InP.

[0046] The light-shielding film 304 is a light-shielding structure formed between the anti-reflection film 300 and the InP layer 302 in the light-shielding pixel region 22. As described above, the light-shielding film 304 may be, for example, a metal film. The light-shielding film 304 is formed in the light-shielding pixel region 22 of the pixel array 10 so as to prevent light from entering the InGaAs layer 306 in the light-shielding pixel region 22.

[0047] The InGaAs layer 306 is a semiconductor film that forms a photoelectric conversion region (light-receiving region), in which carriers are generated by photoelectric conversion according to the intensity of light incident through the InP layer 302, and these carriers are extracted by an electrode provided on the surface opposite the light-receiving surface, thereby outputting a signal based on the light intensity from the pixel 100. The InGaAs layer 306 is formed of, for example, n-type InGaAs.

[0048] The InP layer 302 and the InGaAs layer 306 are provided so as to be shared by a plurality of pixels 100 arranged in a two-dimensional array in the pixel array 10. The InP layer 302 and the InGaAs layer 306 are also provided so as to share at least a portion of the light receiving pixel 200 and the light receiving pixel region 202. As an example, the InP layer 302 and the InGaAs layer 306 are arranged so as to be shared across all of the pixels 100 belonging to the pixel array 10.

[0049] The diffusion region 308 is an electrode for extracting carriers generated by photoelectric conversion in the InGaAs layer 306. The diffusion region 308 is formed of, for example, a p-type semiconductor. The diffusion region 308 detects carriers generated in the vicinity by photoelectric conversion, and outputs a signal to each pixel according to the intensity of incident light.

[0050] Diffusion region 308 may be formed, for example, by an n+ type diffusion region formed in InGaAs and / or an n+ type diffusion region formed in InP. Diffusion region 308 may be, for example, a Zn-doped diffusion region. By way of non-limiting example, in this figure, an n+ type diffusion region formed with Zn in InGaAs and an n+ type diffusion region formed with Zn in InP can form diffusion region 308.

[0051] The diffusion region 308 is connected to an appropriate circuit in a readout circuit layer 316 in which a signal processing circuit is formed in the Si substrate 32, via an InP layer 310 formed on the surface opposite the incident surface of the InGaAs layer 306 in the compound substrate 30, an interlayer insulating film 312, a connection layer 314 formed by an insulating film, and a penetrating electrode 320. The InP layer 310 is, for example, an n-type InP layer, and the diffusion region 308 may be formed by doping the InP layer and the InGaAs layer with zinc (Zn).

[0052] The interlayer insulating film 312 is made of an insulator such as silicon oxide (SiO) or silicon nitride (SiN).

[0053] The connection layer 314 is formed of an insulator such as SiO or SiN.

[0054] The interlayer insulating film 312 and the connecting layer 314 may be formed of the same material. Alternatively, the interlayer insulating film 312 and the connecting layer 314 may be at least partially formed as an integrated layer. For example, in the compound substrate 30, the interlayer insulating film 312 and the connecting layer 314 can be formed as an integrated insulating film (oxide film).

[0055] The electrode 320 is an electrode connected to the diffusion region 308 and is made of, for example, a metal such as Cu, Al, or W, or polysilicon. The electrode 320 forms a wiring for transmitting carriers detected by the diffusion region 308 to the Si substrate 32. The electrode 320 may be made of, for example, a conductor such as a metal, or a semiconductor such as polysilicon.

[0056] As shown in the lower part of the figure, the pixels around where the light-shielding film 304 is formed may be treated as invalid pixels and not used for generating an image signal or acquiring correction parameters. The pixels other than the invalid pixels in the light-receiving pixel region 20 may be treated as valid pixels, and the solid-state imaging device 1 may generate an image signal based on the output from these valid pixels. Furthermore, the pixels other than the invalid pixels in the light-shielding pixel region 22 may be treated as correction pixels, and the solid-state imaging device 1 may acquire parameters for correcting crosstalk in the image signal based on the output from these correction pixels.

[0057] The compound substrate 30 and the Si substrate 32 may be formed on separate substrates and electrically connected by any method to form a stacked semiconductor substrate. Alternatively, the compound substrate 30 and the Si substrate 32 may be formed on the same substrate.

[0058] The solid-state imaging device 1 can acquire parameters for correcting crosstalk in valid pixels by arranging defective pixels among pixels other than invalid pixels that belong to the light-shielded pixel region 22. Acquisition of crosstalk correction parameters from defective pixels will be described below.

[0059] 4 is a diagram schematically illustrating an example of a defective pixel in a light-shielded pixel region 22 according to one embodiment and the movement of carriers generated in the defective pixel. The defective pixel can be arranged anywhere in the light-shielded pixel region 22, except for the invalid pixels. It is desirable that the defective pixel be formed at a position a predetermined number of pixels away from the invalid pixels in the light-shielded pixel region 22. This predetermined number of pixels is for obtaining parameters for correcting crosstalk from pixels surrounding the defective pixel, and it is desirable to leave a margin from the defective pixel that is the number of pixels necessary to generate the correction parameters.

[0060] The defective pixel 222 is formed in the light-shielding pixel region 22 with a different configuration from the other light-shielding pixels 220. Based on the output from the defective pixel 222 and at least one light-shielding pixel 220 arranged around the defective pixel 222, the signal processing circuit 18 obtains parameters for correcting crosstalk in the effective pixel region of the light-receiving pixel region 20.

[0061] This figure shows shaded pixels 220 arranged in a two-dimensional array in a shaded pixel region 22. Defective pixels 222 are arranged at any location among these shaded pixels. The shaded pixels 220 indicated by solid lines are pixels for obtaining correction parameters within a predetermined range from the defective pixels 222, and the solid-state imaging device 1 obtains parameters for correcting crosstalk within the effective pixel region based on the outputs of these pixels.

[0062] The defective pixel 222 is a pixel that belongs to the light-shielded region, and generates carriers due to its defect. The light-shielded pixels 220 surrounding the defective pixel 222 detect the carriers generated in the defective pixel 222 and output a signal corresponding to the amount of carriers detected. When the range shown in FIG. 4 is set as the correction parameter, the intensity of the signals output from the defective pixel 222 and the light-shielded pixels 220 surrounding the defective pixel 222 can be expressed, for example, by the following matrix:

[0063] a 33 is a signal indicating the intensity of the carrier detected in the defective pixel 222, and a 00 is the carrier intensity detected at the top left shaded pixel 220, and a 01 is the carrier intensity detected in the right shaded pixel 220, and a 10 A 00 is the intensity of the carrier detected in the light-shielded pixel 220 below a. 66 is the carrier intensity detected at the bottom right shaded pixel 220.

[0064] The signal processing circuit 18 arranged on the reading circuit layer 316 obtains the matrix according to equation (1) based on the output signals from the light-shielded pixels 220 within a predetermined range from the defective pixel. The signal processing circuit 18 can further normalize the output intensities from each defective pixel 222 and the light-shielded pixels 220 within the range, for example, to obtain correction parameters so that the sum of the pixel values ​​(or the squares of the pixel values) becomes 1.

[0065] The matrix expressed by equation (1) can be considered as the point spread function (PSF) for each pixel. Therefore, the signal processing circuit 18 can obtain image data with crosstalk correction by performing deconvolution processing on the image data obtained from the effective pixels using the matrix representing the correction parameters.

[0066] The signal processing circuit 18 may also acquire image data in which crosstalk has been corrected using a model trained by machine learning using the matrix shown in Equation (1) and an image with no (little) crosstalk. By training on matrices corresponding to various Equations (1), the accuracy of the model can be improved, and by using this model, the signal processing circuit 18 can acquire image data in which crosstalk has been appropriately suppressed.

[0067] The signal processing circuit 18 is 33 Alternatively, the correction parameters based on the formula (1) may be obtained by setting ∑ to 0. In this case, the signal processing circuit 18 can obtain image data in which the influence of crosstalk is suppressed by subtracting the result obtained by deconvolving the image data from the image data or by multiplying the result by a predetermined coefficient and then subtracting the result.

[0068] 4 and equation (1), data on defective pixel 222 and three pixels above, below, left, and right of defective pixel 222 are acquired, but this is not limited to this. At a minimum, correction parameters may be acquired as a 3-row, 3-column matrix taking into account a 3 × 3 range, or, for example, as an 11-row, 11-column matrix taking into account a 11 × 11 range. This size can be set arbitrarily within an appropriate range based on the application, implementation, etc.

[0069] The size of this matrix may be changed depending on temperature, voltage, etc., rather than on the application, implementation, etc. This change may be dynamic depending on the environment in which the image is acquired. Furthermore, the defective pixel does not have to be a single pixel, but may be a multiple contiguous area, for example, 1 x 2 pixels, 2 x 2 pixels, 3 x 3 pixels, etc.

[0070] For example, by performing processing using these correction parameters, the signal processing circuit 18 can acquire image data in which color mixing is suppressed. Next, the arrangement and structure of defective pixels will be described using several embodiments as non-limiting examples.

[0071] (First embodiment)

[0072] 5 is a diagram showing a non-limiting example of the structure of a defective pixel 222 in a light-shielded pixel region 22 according to an embodiment. As described above, the light-shielded pixel 220 is a pixel that includes, for example, a light-shielding film 304 on the light-receiving surface side of the compound substrate 30, and is formed so that light does not directly enter the InGaAs layer 306.

[0073] The defective pixel 222 is a pixel that has a defect on the light-receiving surface side (light incident surface side) of the light-shielding pixel 220. The defective pixel 222 has a trench-shaped defect in the InGaAs layer 306 on the light-receiving surface side that is located above the diffusion region 308 that constitutes the pixel in the drawing. For example, the defective pixel 222 may not have the InP layer 302, and instead may have a structure in which the light-shielding film 304 is embedded inside the trench-shaped defect formed in the InGaAs layer 306. The anti-reflection film 300 is provided on the upper surface thereof.

[0074] Carriers are released from the defect thus formed, and the released carriers are detected by the defective pixel 222 and the surrounding light-shielded pixels 220, thereby making it possible to generate a correction parameter for the above-mentioned crosstalk.

[0075] A metal light-shielding film may be provided inside the trench-shaped defect in defective pixel 222, but this light-shielding film may also be an insulator. If the light-shielding film is metal, more carriers can leak out, but if the amount of leaking carriers is too large, the light-shielding film provided inside the defect can be an insulator to adjust the amount of leaking carriers.

[0076] 6 to 8 are diagrams showing an example of a manufacturing process for a defective pixel having the structure shown in Fig. 5. First, as shown in Fig. 6, an InGaAs layer 306 and a diffusion region 308 are formed by a process similar to that used in a general InGaAs image sensor.

[0077] Next, as shown in FIG. 7, a resist 400 is selectively formed on the upper surface of the formed InP layer 302 by, for example, lithography, and then etching is performed to selectively form trench-shaped defects on the upper surface of the InGaAs layer 306.

[0078] 8, after removing the resist, a light-shielding film 304 is formed on the top and side surfaces of the trench-shaped defect formed in the InP layer 302 and the InGaAs layer 306. Through this process, a defect is formed in which the inside of the trench is covered with the light-shielding film 304.

[0079] Thereafter, an anti-reflection film 300 is formed on the upper surface, thereby forming a defective pixel 222 having a trench-shaped defect as shown in FIG.

[0080] (Second embodiment)

[0081] 9 is a diagram showing a non-limiting example of a defective pixel 222, which differs from the first embodiment described above and has a defect on the side opposite to the light-receiving surface, i.e., on the electrode side that detects carriers. The defective pixel 222 has a defect on the diffusion region 308 side of the InGaAs layer 306. In the drawing, the thickness of the defect is the same as the electrode 320, which is the wiring that transmits signals from the diffusion region 308, but this is shown as an example and is not limiting.

[0082] The defect may be filled with the same material as the electrode 320 that penetrates the diffusion region 308. As in the first embodiment described above, the defect may be filled with an insulator. As yet another example, the defect may be filled with the same material as the diffusion region 308.

[0083] Carriers are released from this defect and are detected by the defective pixel 222 and the surrounding light-shielded pixels 220, and the signal processing circuit 18 can generate correction parameters from the strength of the detected signal.

[0084] 10 to 12 are diagrams showing an example of a manufacturing process for a defect image having the structure of Fig. 9. First, as shown in Fig. 10, a diffusion layer constituting the diffusion region 308 is generated by a process similar to that of a general InGaAs image sensor, and an interlayer insulating film 312 having a space for electrical connection wiring from the diffusion region 308 is formed.

[0085] Next, as shown in FIG. 11, a resist 400 is selectively formed on the upper surface of the interlayer insulating film 312 and the diffusion region 308 by, for example, lithography, and a trench is formed so as to penetrate the diffusion region 308 down to the InGaAs layer 306 .

[0086] Next, as shown in FIG. 12 , after removing the resist, a wiring for connecting to the readout circuit is formed so as to fill the trench in which the wiring was formed. As a result, a conductor is formed so as to extend the electrode 320 within the trench formed in the diffusion region 308 and the InGaAs layer 306. Simultaneously with or after forming the electrode 320 within the trench, a wiring for connecting to the diffusion region 308 is formed to create a connection surface. Then, by electrically connecting this connection surface to the connection surface on the readout circuit side using any appropriate method, the defective pixel 222 having the structure shown in FIG. 9 can be formed.

[0087] (Third embodiment)

[0088] In each of the above-described embodiments, defective pixels are formed, but charge injection pixels may be provided instead of defective pixels. For example, the solid-state imaging device 1 can provide charge injection pixels by injecting charges into the diffusion region 308 for a specific light-shielded pixel 220 in the light-shielded pixel region 22.

[0089] Charge injection can also be performed from the readout circuit layer 316 side, and by injecting charge in this manner, it becomes possible to release carriers from the pixel into the InGaAs layer 306, just like a defective pixel. In other words, a charge injection pixel can be formed by injecting charge from the charge readout circuit side into the diffusion layer that forms the diffusion region 308.

[0090] Then, the signal processing circuit 18 can obtain the correction parameters using equation (1) based on the outputs from the light-shielded pixels 220 around this charge injection pixel.

[0091] In the second and third embodiments, for example, the signal processing circuit 18 calculates a 33 By setting 0, it is possible to obtain appropriate crosstalk correction parameters.

[0092] (Fourth embodiment)

[0093] In each of the above-described embodiments, the configuration of a defective pixel or a pixel that replaces a defective pixel has been described. However, in the following, non-limiting examples will be given regarding the arrangement of defective pixels, etc. (hereinafter referred to as defective pixel 222, but this concept may also include charge injection pixels) in the light-shielded pixel region 22.

[0094] 13 is a diagram showing an example of the arrangement of defective pixels 222 according to an embodiment. A plurality of defective pixels 222 may be provided in the light-shielding pixel region 22. The signal processing circuit 18 may acquire correction parameters corresponding to each defective pixel 222 using equation (1) based on outputs from the plurality of defective pixels 222 and the surrounding light-shielding pixels 220. The solid-state imaging device 1 can use the acquired correction parameters to perform correction to suppress crosstalk in image data acquired from pixels 100 in the effective pixel region of the light-receiving pixel region 20.

[0095] The signal processing circuit 18 may, for example, determine the average value of each element of the correction parameter obtained based on a plurality of defective pixels 222 as the correction parameter.

[0096] For example, the signal processing circuit 18 may use a weighted average of each element of the correction parameter obtained based on a plurality of defective pixels 222 as the correction parameter depending on the position of the pixel 100 within the effective pixel area of ​​the light-receiving pixel area 20. For example, the signal processing circuit 18 may calculate a coefficient of the correction parameter obtained based on each defective pixel 222 in accordance with the ratio of the distance from each defective pixel 222 to the pixel 100 to be corrected within the light-receiving pixel area 20, and use the weighted average value as the correction parameter.

[0097] The signal processing circuit 18 may also obtain correction parameters for each pixel 100, for example, using correction parameters obtained from the nearest defective pixel 222 of the pixel 100 being corrected.

[0098] That is, by arranging a plurality of defective pixels 222 in the light-shielded pixel region 22, and by mixing or selecting correction parameters obtained based on each of the defective pixels 222 using any appropriate method, it is possible to obtain parameters that suppress crosstalk from each pixel 100 to be corrected.

[0099] The arrangement of the defective pixels 222 is shown in FIG. 13 as an example, and is not limited to the example of FIG. 13. The defective pixels 222 can be arranged in any appropriate number and at any appropriate position in the light-shielded pixel region 22.

[0100] (Fifth embodiment)

[0101] In the fourth embodiment, a configuration has been described in which a plurality of defective pixels 222 are provided in the light-shielded pixel region 22. The plurality of defective pixels 222 may be arranged as pixels having different characteristics.

[0102] 14 is a diagram showing an example of the structure of a defective pixel according to one embodiment. The defective pixel 222 may not have a defect in only one pixel, but may have defects across multiple pixels. While FIG. 14 shows a defective pixel with a defect on the light-receiving surface side, this is not limiting, and the defective pixel may have multiple consecutive defective pixels with defects on the diffusion region 308 side.

[0103] The solid-state imaging device 1 may include the defective pixels shown in Fig. 5 and the defective pixels shown in Fig. 14 in any arrangement in the light-shielded pixel region 22. However, the solid-state imaging device 1 may include three or more types of defective pixels. That is, the solid-state imaging device 1 may be formed such that at least one defective pixel in the light-shielded pixel region 22 has a defect area different from that of the other defective pixels.

[0104] The signal processing circuit 18 can generate correction parameters based on, for example, a plurality of defective pixels 222 having different defect areas.

[0105] The signal processing circuit 18 can generate correction parameters based on, for example, a plurality of defective pixels 222 having the same defect area, or a single defective pixel 222 having an appropriate defect area, among a plurality of defective pixels 222. The crosstalk characteristics of the signals received and output by the light receiving pixels 200 may change depending on the environment, such as temperature.

[0106] On the other hand, as described above, it is possible to generate correction parameters having various temperature and other characteristics depending on the defect area. Therefore, by arranging defective pixels 222 having defects of different areas, it is possible to obtain correction parameters that correspond to environmental characteristics such as temperature.

[0107] In this case, the signal processing circuit 18 can acquire the correction parameters based on one or more defective pixels 222 having an appropriate defect area depending on the environment, such as temperature. When generating the correction parameters based on multiple defective pixels 222, the signal processing circuit 18 may acquire the correction parameters by processing similar to that in the fourth embodiment described above.

[0108] In addition, when a charge injection pixel is used instead of the defective pixel 222, control may be performed to inject charge into a plurality of different light-shielded pixels 220, or control may be performed to inject different amounts of charge into a plurality of charge injection pixels arranged in different regions.

[0109] (Sixth embodiment)

[0110] When multiple defective pixels are provided as shown in FIG. 13, defective pixels 222 may be arranged with defects at different positions relative to the diffusion region 308 .

[0111] 15 is a diagram showing a non-limiting example of a defective pixel 222 having defects at different positions when multiple defective pixels 222 are arranged. The multiple defective pixels 222 can have defects at any position, for example, at a position shifted from the center of the pixel. While this diagram shows a case where the defect is on the light-receiving surface side, this is not limiting. Similarly, a defective pixel 222 having a defect at a position shifted from the center of the diffusion region 308 can also be provided when the defect is on the diffusion region 308 side.

[0112] By having such a deviation, it is possible to obtain correction parameters that take into account the deviation in pixel pattern alignment.

[0113] (Seventh embodiment)

[0114] When pixels for acquiring multiple correction parameters are provided as shown in FIG. 13, an open pixel 100 without a light-shielding film 304 may be provided in place of at least one defective pixel 222 in the light-shielded pixel region 22.

[0115] 16 is a diagram showing an example of an aperture pixel. As shown in the figure, the aperture pixel 224 is a pixel that is arranged in a region that does not have a light-shielding film 304 within the light-shielding pixel region 22. Based on the outputs from this aperture pixel 224 and the surrounding light-shielding pixels 220, the signal processing circuit 18 can obtain correction parameters.

[0116] By providing aperture pixels 224 in addition to defective pixels 222, it is possible to achieve crosstalk correction that is compatible with various subjects and output levels. It may be difficult for aperture pixels 224 to obtain appropriate correction information when the total amount of signals obtained from valid pixels in light-receiving pixel region 20 is small, such as when some signals are bright or a predetermined area or more is dark. However, by obtaining correction parameters from defective pixels 222, it is possible to further improve the accuracy of image data correction from correction parameters using aperture pixels 224.

[0117] The signal processing circuit 18 can obtain the correction parameters based on the outputs from the defective pixel 222 and the surrounding light-shielding pixels 220, and the outputs from the aperture pixel 224 and the surrounding light-shielding pixels 220. The signal processing circuit 18 may obtain the correction parameters, for example, by mixing these outputs in an appropriate manner.

[0118] Furthermore, depending on the situation, the signal processing circuit 18 can also switch the method of obtaining the correction parameters.

[0119] 17 is a flowchart showing a process according to one embodiment. The signal processing circuit 18 first determines whether there is an appropriate output from the aperture pixel 224 (S100). The signal processing circuit 18 then determines whether there is a sufficient amount of signal from the aperture pixel 224 and the surrounding light-shielding pixels 220 to obtain correction parameters.

[0120] If the signal processing circuit 18 determines that there is a sufficient amount of signal from the aperture pixel 224 (S100: YES), it determines whether this signal contains components with wavelengths longer than visible light (S102).

[0121] If components with wavelengths longer than visible light are included (S102: YES), the signal processing circuit 18 acquires correction parameters (S104) based on the outputs from the aperture pixel 224 and the surrounding light-shielding pixels 220. The signal processing circuit 18 acquires the correction parameters by performing processing similar to that of equation (1), for example, based on the outputs from the aperture pixel 224 and the surrounding light-shielding pixels 220.

[0122] If there are multiple aperture pixels 224, the signal processing circuitry 18 can obtain correction parameters for each pixel 100 by blending correction parameters based on the multiple aperture pixels 224 or adjusting the correction parameters based on position, similar to the processing of defective pixels 222 in the previously described embodiment.

[0123] If no components with wavelengths longer than visible light are included (S102: NO), the processing of the signal processing circuit 18 is branched depending on whether the defect in the defective pixel 222 is on the PN junction side, i.e., the diffusion region 308 side, or whether a charge injection pixel is used instead of the defective pixel 222 (S106).

[0124] If either of the above applies (S106: YES), the signal processing circuit 18 acquires the correction parameters in the process of S104.

[0125] If there is no appropriate output from the aperture pixel (S100: NO), or if the defect of the defective pixel 222 is on the light receiving surface side in S106 (S106: NO), the signal processing circuit 18 performs acquisition of correction parameters according to at least the defective pixel 222 (S108).

[0126] The signal processing circuit 18 may obtain the correction parameters so that they do not depend on the aperture pixels 224 but only on the defective pixels 222 (or charge-injected pixels), for example.

[0127] As another example, the signal processing circuit 18 may obtain correction parameters that take into account the calculation of parameters from the aperture pixels 224 in addition to the calculation of parameters from the defective pixels 222 .

[0128] As described above, in any embodiment of the present disclosure, by having a defective pixel, and / or a charge-injected pixel, and / or an aperture pixel in a light-shielded area outside the effective pixel area, it is possible to obtain parameters for correcting crosstalk based on the output from one or more surrounding pixels.

[0129] As a result, it becomes possible to obtain parameters for each chip to correct the effects of crosstalk in subsequent processing, and to obtain images with high image quality after color mixing correction. In addition, by providing defective pixels with multiple different characteristics in the light-shielded area outside the effective pixel area, it is also possible to obtain the signal output dependency of color mixing parameters, enabling more accurate correction.

[0130] The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, a construction machine, or an agricultural machine (tractor).

[0131] 18 is a block diagram showing a schematic configuration example of a vehicle control system 7000, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied. The vehicle control system 7000 includes a plurality of electronic control units connected via a communication network 7010. In the example shown in FIG. 18, the vehicle control system 7000 includes a drive system control unit 7100, a body system control unit 7200, a battery control unit 7300, an outside-vehicle information detection unit 7400, an inside-vehicle information detection unit 7500, and an integrated control unit 7600. The communication network 7010 connecting these multiple control units may be an in-vehicle communication network conforming to any standard, such as a Controller Area Network (CAN), a Local Interconnect Network (LIN), a Local Area Network (LAN), or FlexRay (registered trademark).

[0132] Each control unit includes a microcomputer that performs arithmetic processing according to various programs, a memory unit that stores the programs executed by the microcomputer or parameters used in various calculations, and a drive circuit that drives various controlled devices. Each control unit includes a network I / F for communicating with other control units via a communication network 7010, and a communication I / F for communicating with devices or sensors inside and outside the vehicle via wired or wireless communication. Figure 18 illustrates the functional configuration of the integrated control unit 7600, including a microcomputer 7610, a general-purpose communication I / F 7620, a dedicated communication I / F 7630, a positioning unit 7640, a beacon receiving unit 7650, an in-vehicle device I / F 7660, an audio / video output unit 7670, an in-vehicle network I / F 7680, and a memory unit 7690. Similarly, the other control units also include a microcomputer, a communication I / F, a memory unit, and the like.

[0133] The drivetrain control unit 7100 controls the operation of devices related to the drivetrain of the vehicle according to various programs. For example, the drivetrain control unit 7100 functions as a control device for a driving force generating device for generating driving force for the vehicle, such as an internal combustion engine or a drive motor, a driving force transmission mechanism for transmitting driving force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating braking force for the vehicle. The drivetrain control unit 7100 may also function as a control device for an ABS (Antilock Brake System) or ESC (Electronic Stability Control), etc.

[0134] A vehicle state detection unit 7110 is connected to the drivetrain control unit 7100. The vehicle state detection unit 7110 includes at least one of a gyro sensor that detects the angular velocity of the axial rotational motion of the vehicle body, an acceleration sensor that detects the acceleration of the vehicle, or a sensor that detects the amount of operation of the accelerator pedal, the amount of operation of the brake pedal, the steering angle of the steering wheel, the engine rotation speed, the wheel rotation speed, etc. The drivetrain control unit 7100 performs arithmetic processing using signals input from the vehicle state detection unit 7110, and controls the internal combustion engine, the drive motor, the electric power steering device, the brake device, etc.

[0135] The body system control unit 7200 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 7200 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 7200. The body system control unit 7200 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0136] The battery control unit 7300 controls the secondary battery 7310, which is the power supply source for the drive motor, in accordance with various programs. For example, information such as battery temperature, battery output voltage, or remaining battery capacity is input to the battery control unit 7300 from a battery device equipped with the secondary battery 7310. The battery control unit 7300 performs arithmetic processing using these signals, and controls the temperature regulation of the secondary battery 7310 or a cooling device or the like equipped in the battery device.

[0137] The outside vehicle information detection unit 7400 detects information outside the vehicle equipped with the vehicle control system 7000. For example, at least one of an imaging unit 7410 and an outside vehicle information detection unit 7420 is connected to the outside vehicle information detection unit 7400. The imaging unit 7410 includes at least one of a ToF (Time Of Flight) camera, a stereo camera, a monocular camera, an infrared camera, and other cameras. The outside vehicle information detection unit 7420 includes at least one of an environmental sensor for detecting the current weather or climate, or a surrounding information detection sensor for detecting other vehicles, obstacles, pedestrians, etc. around the vehicle equipped with the vehicle control system 7000.

[0138] The environmental sensor may be, for example, at least one of a raindrop sensor that detects rain, a fog sensor that detects fog, a sunshine sensor that detects the level of sunshine, and a snow sensor that detects snowfall. The surrounding information detection sensor may be at least one of an ultrasonic sensor, a radar device, and a LIDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) device. The imaging unit 7410 and the outside vehicle information detection unit 7420 may each be provided as an independent sensor or device, or may be provided as a device in which multiple sensors or devices are integrated.

[0139] 19 shows an example of the installation positions of the imaging unit 7410 and the vehicle exterior information detection unit 7420. The imaging units 7910, 7912, 7914, 7916, and 7918 are installed, for example, at at least one of the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 7900. The imaging unit 7910 installed on the front nose and the imaging unit 7918 installed on the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 7900. The imaging units 7912 and 7914 installed on the side mirrors mainly acquire images of the sides of the vehicle 7900. The imaging unit 7916 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 7900. The imaging unit 7918 provided on the top of the windshield inside the vehicle is primarily used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0140] 19 shows an example of the imaging ranges of the imaging units 7910, 7912, 7914, and 7916. Imaging range a indicates the imaging range of the imaging unit 7910 provided on the front nose, imaging ranges b and c indicate the imaging ranges of the imaging units 7912 and 7914 provided on the side mirrors, respectively, and imaging range d indicates the imaging range of the imaging unit 7916 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 7910, 7912, 7914, and 7916, a bird's-eye view image of the vehicle 7900 viewed from above can be obtained.

[0141] The outside vehicle information detection units 7920, 7922, 7924, 7926, 7928, 7930 provided on the front, rear, sides, corners, and above the windshield inside the vehicle cabin of the vehicle 7900 may be, for example, ultrasonic sensors or radar devices. The outside vehicle information detection units 7920, 7926, 7930 provided on the front nose, rear bumper, back door, and above the windshield inside the vehicle cabin of the vehicle 7900 may be, for example, LIDAR devices. These outside vehicle information detection units 7920 to 7930 are mainly used to detect preceding vehicles, pedestrians, obstacles, etc.

[0142] Returning to FIG. 18 , the explanation continues. The outside-vehicle information detection unit 7400 causes the imaging unit 7410 to capture an image outside the vehicle and receives the captured image data. The outside-vehicle information detection unit 7400 also receives detection information from the connected outside-vehicle information detection unit 7420. If the outside-vehicle information detection unit 7420 is an ultrasonic sensor, a radar device, or a LIDAR device, the outside-vehicle information detection unit 7400 emits ultrasonic waves or electromagnetic waves and receives information on the received reflected waves. The outside-vehicle information detection unit 7400 may perform object detection processing or distance detection processing for people, vehicles, obstacles, signs, or text on the road surface, based on the received information. The outside-vehicle information detection unit 7400 may also perform environment recognition processing to recognize rainfall, fog, road conditions, etc., based on the received information. The outside-vehicle information detection unit 7400 may also calculate the distance to an object outside the vehicle based on the received information.

[0143] The outside vehicle information detection unit 7400 may also perform image recognition processing or distance detection processing to recognize people, vehicles, obstacles, signs, characters on the road, etc. based on the received image data. The outside vehicle information detection unit 7400 may perform processing such as distortion correction or alignment on the received image data, and may also generate an overhead image or a panoramic image by combining image data captured by different imaging units 7410. The outside vehicle information detection unit 7400 may also perform viewpoint conversion processing using image data captured by different imaging units 7410.

[0144] The interior information detection unit 7500 detects information inside the vehicle. The interior information detection unit 7500 is connected to, for example, a driver state detection unit 7510 that detects the state of the driver. The driver state detection unit 7510 may include a camera that captures an image of the driver, a biosensor that detects the driver's biometric information, or a microphone that collects sound inside the vehicle. The biosensor may be provided, for example, on the seat or steering wheel, and detect biometric information of a passenger sitting in the seat or the driver gripping the steering wheel. The interior information detection unit 7500 may calculate the driver's level of fatigue or concentration, or may determine whether the driver is dozing, based on the detection information input from the driver state detection unit 7510. The interior information detection unit 7500 may perform processing such as noise canceling on the collected audio signal.

[0145] The integrated control unit 7600 controls the overall operation of the vehicle control system 7000 in accordance with various programs. An input unit 7800 is connected to the integrated control unit 7600. The input unit 7800 is realized by a device that can be operated by a passenger, such as a touch panel, a button, a microphone, a switch, or a lever. Data obtained by voice recognition of voice input through a microphone may be input to the integrated control unit 7600. The input unit 7800 may be, for example, a remote control device using infrared or other radio waves, or an externally connected device such as a mobile phone or PDA (Personal Digital Assistant) that is compatible with the operation of the vehicle control system 7000. The input unit 7800 may be, for example, a camera, in which case the passenger can input information using gestures. Alternatively, data obtained by detecting the movement of a wearable device worn by the passenger may be input. Furthermore, the input unit 7800 may include, for example, an input control circuit that generates an input signal based on information input by a passenger or the like using the input unit 7800 and outputs the signal to the integrated control unit 7600. The passenger or the like operates the input unit 7800 to input various data to the vehicle control system 7000 and to instruct processing operations.

[0146] The storage unit 7690 may include a ROM (Read Only Memory) that stores various programs executed by the microcomputer, and a RAM (Random Access Memory) that stores various parameters, calculation results, sensor values, etc. The storage unit 7690 may also be realized by a magnetic storage device such as an HDD (Hard Disc Drive), a semiconductor storage device, an optical storage device, a magneto-optical storage device, or the like.

[0147] The general-purpose communication I / F 7620 is a general-purpose communication I / F that mediates communication with various devices present in the external environment 7750. The general-purpose communication I / F 7620 may implement a cellular communication protocol such as GSM (Global System of Mobile communications), WiMAX (registered trademark), LTE (Long Term Evolution), or LTE-Advanced (LTE-A), or other wireless communication protocols such as wireless LAN (also known as Wi-Fi (registered trademark)) or Bluetooth (registered trademark). The general-purpose communication I / F 7620 may connect to devices (e.g., application servers or control servers) present on an external network (e.g., the Internet, a cloud network, or an operator-specific network) via, for example, a base station or an access point. The general-purpose communication I / F 7620 may also connect to a terminal located near the vehicle (e.g., a terminal of a driver, pedestrian, or store, or an MTC (Machine Type Communication) terminal) using, for example, P2P (Peer To Peer) technology.

[0148] The dedicated communication I / F 7630 is a communication I / F that supports a communication protocol designed for use in vehicles. The dedicated communication I / F 7630 may implement a standard protocol such as WAVE (Wireless Access in Vehicle Environment), which is a combination of a lower layer IEEE802.11p and an upper layer IEEE1609, a dedicated short range communications (DSRC), or a cellular communication protocol. The dedicated communication I / F 7630 typically performs V2X communication, which is a concept including one or more of vehicle-to-vehicle communication, vehicle-to-infrastructure communication, vehicle-to-home communication, and vehicle-to-pedestrian communication.

[0149] The positioning unit 7640 performs positioning by receiving, for example, GNSS signals from GNSS (Global Navigation Satellite System) satellites (for example, GPS signals from GPS (Global Positioning System) satellites) and generates position information including the latitude, longitude, and altitude of the vehicle. Note that the positioning unit 7640 may identify the current position by exchanging signals with a wireless access point, or may obtain position information from a terminal such as a mobile phone, PHS, or smartphone that has a positioning function.

[0150] The beacon receiving unit 7650 receives, for example, radio waves or electromagnetic waves transmitted from radio stations or the like installed on the road, and acquires information such as the current location, congestion, road closures, required travel time, etc. The function of the beacon receiving unit 7650 may be included in the dedicated communication I / F 7630 described above.

[0151] The in-vehicle device I / F 7660 is a communication interface that mediates connections between the microcomputer 7610 and various in-vehicle devices 7760 present in the vehicle. The in-vehicle device I / F 7660 may establish wireless connections using wireless communication protocols such as wireless LAN, Bluetooth (registered trademark), NFC (Near Field Communication), or WUSB (Wireless USB). The in-vehicle device I / F 7660 may also establish a wired connection such as USB (Universal Serial Bus), HDMI (High-Definition Multimedia Interface), or MHL (Mobile High-Definition Link) via a connection terminal (and a cable, if necessary) not shown. The in-vehicle device 7760 may include, for example, at least one of a mobile device or a wearable device owned by a passenger, or an information device carried into or attached to a vehicle. The in-vehicle device 7760 may also include a navigation device that searches for a route to an arbitrary destination. The in-vehicle device I / F 7660 exchanges control signals or data signals with these in-vehicle devices 7760.

[0152] The in-vehicle network I / F 7680 is an interface that mediates communication between the microcomputer 7610 and the communication network 7010. The in-vehicle network I / F 7680 transmits and receives signals in accordance with a predetermined protocol supported by the communication network 7010.

[0153] The microcomputer 7610 of the integrated control unit 7600 controls the vehicle control system 7000 in accordance with various programs based on information acquired via at least one of the general-purpose communication I / F 7620, the dedicated communication I / F 7630, the positioning unit 7640, the beacon receiving unit 7650, the in-vehicle device I / F 7660, and the in-vehicle network I / F 7680. For example, the microcomputer 7610 may calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on acquired information inside and outside the vehicle, and output control commands to the drivetrain control unit 7100. For example, the microcomputer 7610 may perform cooperative control aimed at realizing functions of an Advanced Driver Assistance System (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the following distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc. In addition, the microcomputer 7610 may perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling a driving force generating device, steering mechanism, braking device, etc. based on information acquired about the vehicle's surroundings.

[0154] The microcomputer 7610 may generate three-dimensional distance information between the vehicle and objects such as surrounding structures and people, and create local map information including information about the vicinity of the vehicle's current location, based on information acquired via at least one of the general-purpose communication I / F 7620, the dedicated communication I / F 7630, the positioning unit 7640, the beacon receiving unit 7650, the in-vehicle device I / F 7660, and the in-vehicle network I / F 7680. The microcomputer 7610 may also predict dangers, such as a vehicle collision, the approach of a pedestrian, or entry into a closed road, based on the acquired information, and generate a warning signal. The warning signal may be, for example, a signal for generating a warning sound or turning on a warning lamp.

[0155] The audio / video output unit 7670 transmits at least one of audio and visual output signals to an output device capable of visually or audibly notifying vehicle occupants or the outside of the vehicle of information. In the example of FIG. 18 , an audio speaker 7710, a display unit 7720, and an instrument panel 7730 are illustrated as output devices. The display unit 7720 may include, for example, at least one of an on-board display and a head-up display. The display unit 7720 may have an AR (Augmented Reality) display function. The output device may be other devices, such as headphones, a wearable device such as a glasses-type display worn by the occupant, a projector, or a lamp. When the output device is a display device, the display device visually displays results obtained by various processes performed by the microcomputer 7610 or information received from other control units in various formats, such as text, images, tables, and graphs. Furthermore, when the output device is an audio output device, the audio output device converts an audio signal consisting of reproduced voice data or acoustic data into an analog signal and outputs it audibly.

[0156] In the example shown in FIG. 18 , at least two control units connected via the communication network 7010 may be integrated into a single control unit. Alternatively, each control unit may be composed of multiple control units. Furthermore, the vehicle control system 7000 may include another control unit not shown. In addition, in the above description, some or all of the functions performed by one control unit may be performed by another control unit. In other words, as long as information is transmitted and received via the communication network 7010, predetermined arithmetic processing may be performed by one of the control units. Similarly, a sensor or device connected to one control unit may be connected to another control unit, and multiple control units may transmit and receive detection information to each other via the communication network 7010.

[0157] A computer program for realizing each function of the solid-state imaging device 1 according to this embodiment described using any of FIGS. 1 to 17 or other circuits, devices, and methods can be implemented in any control unit, etc. Also, a computer-readable recording medium storing such a computer program can be provided. The recording medium can be, for example, a magnetic disk, an optical disk, a magneto-optical disk, a flash memory, etc. Also, the computer program may be distributed, for example, via a network, without using a recording medium.

[0158] In the vehicle control system 7000 described above, the device according to this embodiment described using any of Figures 1 to 17 can be applied to a device that performs any image capture in the application example shown in Figure 18.

[0159] 1 to 17 may be realized in a module (for example, an integrated circuit module configured on a single die) for the integrated control unit 7600 shown in Fig. 18. Alternatively, the device described in any of Figs. 1 to 17 may be realized by multiple control units of the vehicle control system 7000 shown in Fig. 18.

[0160] The above-described embodiment may be modified as follows.

[0161] (1) A solid-state imaging device comprising: a light-receiving pixel region in which at least two of a plurality of light-receiving pixels share a photoelectric conversion region, and the plurality of light-receiving pixels are arranged in a two-dimensional array; and a light-shielding pixel region in which a plurality of light-shielding pixels are arranged around the light-receiving pixel region, the light-shielding pixels sharing the photoelectric conversion region with the light-receiving pixels belonging to the light-receiving pixel region and being shielded from light; and a signal processing circuit that has a defective pixel formed in the light-shielding pixel region with a different configuration from the other light-shielding pixels, and obtains parameters for correcting crosstalk in the light-receiving pixel region based on output from at least one of the light-shielding pixels arranged around the defective pixel.

[0162] (2) The solid-state imaging device according to (1), wherein the defective pixel has a defect on the light receiving surface side of the photoelectric conversion region.

[0163] (3) The solid-state imaging device according to (1), wherein the defective pixel has a defect on the side opposite to the light receiving surface of the photoelectric conversion region.

[0164] (4) A solid-state imaging device according to any one of (1) to (3), wherein the photoelectric conversion region is formed of indium gallium arsenide, the light receiving surface is formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface is shielded from light by a light-shielding structure.

[0165] (5) The solid-state imaging device according to any one of (1) to (4), wherein a plurality of the defective pixels are provided, and the signal processing circuit acquires the parameters based on outputs from the light-shielding pixels arranged around each of the plurality of defective pixels.

[0166] (6) The solid-state imaging device according to (5), wherein at least one of the plurality of defective pixels is formed in an area different from the areas of the other defective pixels.

[0167] (7) The solid-state imaging device according to any one of (1) to (6), further comprising at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

[0168] (8) The solid-state imaging device according to (7), wherein the signal processing circuit acquires the parameters based on outputs of the defective pixel and the aperture pixel.

[0169] (9) A solid-state imaging device comprising: a light-receiving pixel region in which at least two of a plurality of light-receiving pixels share a photoelectric conversion region, and the plurality of light-receiving pixels are arranged in a two-dimensional array; and a light-shielding pixel region in which a plurality of light-shielding pixels are arranged around the light-receiving pixel region, the light-shielding pixels sharing the photoelectric conversion region with the light-receiving pixels belonging to the light-receiving pixel region and being shielded from light; wherein the light-shielding pixel region has charge-injection pixels into which charge is injected, and further comprising: a signal processing circuit that acquires parameters for correcting crosstalk in the light-receiving pixel region based on an output from at least one of the light-shielding pixels arranged around the charge-injection pixels.

[0170] (10) The solid-state imaging device according to (9), wherein the charge injection pixel is formed by injecting charges into a diffusion layer that detects carriers generated in the photoelectric conversion region.

[0171] (11) The solid-state imaging device according to (10), wherein the charge injection pixel receives charge from a circuit that reads out an output from a diffusion layer that detects the carriers.

[0172] (12) A solid-state imaging device according to any one of (9) to (11), wherein the photoelectric conversion region is formed of indium gallium arsenide, the light receiving surface is formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface is shielded from light by a light-shielding structure.

[0173] (13) The solid-state imaging device according to any one of (9) to (12), wherein a plurality of the charge injection pixels are provided, and the signal processing circuit acquires the parameters based on outputs from the light-shielded pixels arranged around each of the plurality of charge injection pixels.

[0174] (14) The solid-state imaging device according to (13), wherein at least one of the charge injection pixels is injected with a different amount of charge than the other charge injection pixels.

[0175] (15) The solid-state imaging device according to any one of (9) to (14), further comprising at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

[0176] (16) The solid-state imaging device according to any one of (9) to (14), further including a defective pixel in the light-shielded region, the defective pixel having a different configuration from the other light-shielded pixels.

[0177] (17) The solid-state imaging device according to (16), further comprising: at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

[0178] The aspects of the present disclosure are not limited to the above-described embodiments and include various conceivable modifications, and the effects of the present disclosure are not limited to the above-described contents. The components in each embodiment may be appropriately combined and applied. In other words, various additions, modifications, and partial deletions are possible within the scope of the conceptual idea and intent of the present disclosure, which is derived from the content defined in the claims and their equivalents.

[0179] 1: solid-state imaging device, 10: pixel array, 100: pixel, 20: light-receiving pixel region, 200: light-receiving pixel, 22: light-shielding pixel region, 220: light-shielding pixel, 222: defective pixel, 224: aperture pixel, 12: control circuit, 14: first scanning circuit, 140: control line, 16: second scanning circuit, 160: control line, 18: signal processing circuit, 180: signal line, 30: compound substrate, 300: anti-reflection film, 302: InP layer, 304: light-shielding film, 306: InGaAs layer, 308: diffusion region, 310: InP layer, 312: interlayer insulating film, 314: connection layer, 32: Si substrate, 316: readout circuit layer 320: electrode, 400: resist

Claims

1. A solid-state imaging device comprising: a photosensitive pixel region in which at least two of a plurality of photosensitive pixels share a photoelectric conversion region, and the plurality of photosensitive pixels are arranged in a two-dimensional array; and a light-shielding pixel region in which a plurality of light-shielding pixels are arranged around the photosensitive pixel region, the light-shielding pixels sharing the photoelectric conversion region with the photosensitive pixels belonging to the photosensitive pixel region and being shielded from light; and a signal processing circuit that has a defective pixel formed in the light-shielding pixel region with a different configuration from the other light-shielding pixels, and obtains parameters for correcting crosstalk in the photosensitive pixel region based on output from at least one of the light-shielding pixels arranged around the defective pixel.

2. The solid-state imaging device according to claim 1, wherein the defective pixel has a defect on the light-receiving surface side of the photoelectric conversion region.

3. The solid-state imaging device according to claim 1, wherein the defective pixel has a defect on the opposite side of the photoelectric conversion region from the light receiving surface.

4. The solid-state imaging device according to claim 1, wherein the photoelectric conversion region is formed of indium gallium arsenide, the light receiving surface is formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface is shielded from light by a light-shielding structure.

5. The solid-state imaging device according to claim 1, wherein a plurality of the defective pixels are provided, and the signal processing circuit acquires the parameters based on outputs from the light-shielding pixels arranged around each of the plurality of defective pixels.

6. The solid-state imaging device according to claim 5, wherein at least one of the plurality of defective pixels is formed in an area different from the areas of the other defective pixels.

7. The solid-state imaging device according to claim 1, further comprising at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

8. The solid-state imaging device according to claim 7, wherein the signal processing circuit acquires the parameters based on outputs from the defective pixel and the aperture pixel.

9. A solid-state imaging device comprising: a light-receiving pixel region in which at least two of a plurality of light-receiving pixels share a photoelectric conversion region, and the plurality of light-receiving pixels are arranged in a two-dimensional array; and a light-shielding pixel region in which a plurality of light-shielding pixels are arranged around the light-receiving pixel region, the light-shielding pixels sharing the photoelectric conversion region with the light-receiving pixels belonging to the light-receiving pixel region and being shielded from light; wherein the light-shielding pixel region has charge-injection pixels into which charge is injected, and further comprising a signal processing circuit that obtains parameters for correcting crosstalk in the light-receiving pixel region based on output from at least one of the light-shielding pixels arranged around the charge-injection pixels.

10. The solid-state imaging device according to claim 9, wherein the charge injection pixel is formed by injecting charges into a diffusion layer that detects carriers generated in the photoelectric conversion region.

11. The solid-state imaging device according to claim 10, wherein the charge injection pixel receives charge injection from a circuit that reads out an output from a diffusion layer that detects the carriers.

12. The solid-state imaging device according to claim 9, wherein the photoelectric conversion region is formed of indium gallium arsenide, the light receiving surface is formed on a predetermined surface of the photoelectric conversion region of indium phosphide, and in the light-shielding pixel region, the light receiving surface is shielded from light by a light-shielding structure.

13. The solid-state imaging device according to claim 9, wherein a plurality of the charge injection pixels are provided, and the signal processing circuit acquires the parameters based on outputs from the light-shielded pixels arranged around each of the plurality of charge injection pixels.

14. The solid-state imaging device according to claim 13, wherein at least one of the charge injection pixels is injected with a different amount of charge than the other charge injection pixels.

15. The solid-state imaging device according to claim 9, further comprising at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

16. The solid-state imaging device according to claim 9, further comprising a defective pixel formed in the light-shielded region and having a different configuration from the other light-shielded pixels.

17. The solid-state imaging device according to claim 16, further comprising at least one aperture pixel in the light-shielding region that does not have the light-shielding structure.

Images