Component of semiconductor manufacturing apparatus and method for manufacturing component of semiconductor manufacturing apparatus

Abstract

This component of a semiconductor manufacturing apparatus includes: a base material that has a first surface and a second surface which is contiguous with the first surface; and a film that contains aluminum hydroxide and is contiguously and directly provided on the first surface and the second surface. In addition, the base material contains aluminum. In addition, the base material includes a space through which a liquid flows, and the inner wall of the space is directly provided with the film that contains aluminum hydroxide. In addition, the base material includes a space in which a heat source can be disposed, and the inner wall of the space is directly provided with the film that contains aluminum hydroxide.

Description

Semiconductor manufacturing equipment component and method for manufacturing semiconductor manufacturing equipment component

[0001] One embodiment of the present invention relates to a component of a semiconductor manufacturing device. Another embodiment of the present invention relates to a method for manufacturing a component of a semiconductor manufacturing device.

[0002] Semiconductor devices are devices that utilize the semiconducting properties of silicon and other materials. In recent years, semiconductor devices have been installed in almost all electronic devices, enabling control according to the functions of each electronic device. Semiconductor devices are constructed by stacking insulating and conductive films on a substrate such as a silicon wafer (Si-wafer) and patterning these films or the substrate. For example, these films are stacked on the substrate using semiconductor manufacturing equipment that enables evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and these films or substrates are patterned using semiconductor manufacturing equipment that enables a photolithography process. The photolithography process includes forming a resist on the films to be patterned, exposing the resist, forming a resist mask by development, partially removing the films by etching, and removing the resist mask.

[0003] A semiconductor manufacturing apparatus includes multiple components (semiconductor manufacturing apparatus components). For example, the components of the semiconductor manufacturing apparatus include a stage (hereinafter referred to as a stage) on which a substrate is placed, an electrode unit, a shower head, and the like. The characteristics of the above-mentioned film are significantly influenced by the conditions for forming the film and the conditions for etching the film. One of these conditions is the voltage applied to the stage. With the recent trend toward miniaturization of semiconductor devices, the ratio of the diameter of the hole to the thickness of the film to be processed (the aspect ratio) has increased. This has led to a trend toward increasing the voltage applied to the stage included in, for example, an etching apparatus. Therefore, improvements in the withstand voltage and insulating properties of the components included in the stage are required. Furthermore, the above-mentioned film may be deposited on a substrate by generating plasma, or may be etched by generating plasma. Therefore, improvements in the plasma resistance of the components included in the stage are required.

[0004] For example, components included in the stage include a cooling plate, an electrostatic chuck, a heater, etc. For example, Patent Document 1 describes an electrostatic chuck in which, with a view to suppressing a decrease in insulation properties, an alumite film is formed on the surface of a base material constituting the stage, and a boehmite film is formed on the alumite.

[0005] Japanese Patent Application Laid-Open No. 2005-57234

[0006] An object of an embodiment of the present invention is to provide a semiconductor manufacturing equipment component capable of suppressing a decrease in insulation properties. Another object of an embodiment of the present invention is to provide a semiconductor manufacturing equipment component capable of suppressing a decrease in voltage resistance characteristics. Another object of an embodiment of the present invention is to provide a method for manufacturing a semiconductor manufacturing equipment component capable of suppressing a decrease in insulation properties. Another object of an embodiment of the present invention is to provide a method for manufacturing a semiconductor manufacturing equipment component capable of suppressing a decrease in voltage resistance characteristics.

[0007] According to one embodiment of the present invention, a component of a semiconductor manufacturing apparatus for mounting a substrate includes a base having a first surface and a second surface continuous with the first surface, and a film containing aluminum hydroxide provided continuously directly on the first surface and the second surface.

[0008] A method for fabricating a component of a semiconductor manufacturing apparatus for mounting a substrate according to one embodiment of the present invention includes placing a base material having a first surface and a second surface continuous with the first surface in a chamber that can be heated and pressurized, supplying water or an aqueous solution into the chamber, heating and pressurizing the chamber to generate water vapor in the chamber, and forming a film containing aluminum hydroxide continuously on the first surface and the second surface.

[0009] A method for fabricating a component of a semiconductor manufacturing apparatus for mounting a substrate according to one embodiment of the present invention includes placing a base material having a first surface and a second surface continuous with the first surface in a chamber that can be heated and pressurized, supplying water vapor into the chamber, heating and pressurizing the chamber, and forming a film containing aluminum hydroxide continuously on the first surface and the second surface.

[0010] According to one embodiment of the present invention, there is provided a component for semiconductor manufacturing equipment capable of suppressing a decrease in insulation properties and withstand voltage. Also, according to one embodiment of the present invention, there is provided a method for manufacturing a component for semiconductor manufacturing equipment capable of suppressing a decrease in insulation properties and withstand voltage.

[0011] 11 is a perspective view showing the configuration of a stage according to a first embodiment of the present invention. FIG. 12 is a schematic view showing a cross section of the stage according to the first embodiment of the present invention. FIG. 13 is a schematic view showing a cross section of an enlarged portion of the stage shown in FIG. 2. FIG. 14 is a schematic view showing a cross section of an enlarged portion of a stage of a conventional example. FIG. 15 is a schematic view showing a cross section of an enlarged portion of the stage shown in FIG. 2. FIG. 16 is a schematic view showing a cross section of an enlarged portion of the stage shown in FIG. 2. FIG. 17 is a schematic view showing a cross section of an enlarged portion of the stage shown in FIG. 2. FIG. 18 is a flowchart showing the method of manufacturing the stage according to the first embodiment of the present invention. FIG. 19 is a schematic view showing a cross section of a semiconductor manufacturing apparatus including a stage according to a second embodiment of the present invention. FIG. 19 is a perspective view showing the configuration of a shower head according to a third embodiment of the present invention. FIG. 11 is a schematic view showing a cross section of the shower head shown in FIG. 11 taken along A1-A2. FIG. 19 is a schematic view showing a cross section of the shower head shown in FIG. 11 taken along B1-B2. FIG. 19 is a schematic view showing a cross section of a semiconductor manufacturing apparatus including a stage and a shower head according to a fourth embodiment of the present invention.

[0012] A stage or a method for manufacturing a stage according to one embodiment of the present invention will be described below with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and should not be construed as being limited to the description of the embodiment exemplified below.

[0013] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements having the same functions as those explained with reference to the previous drawings may be assigned the same reference numerals, and duplicate explanations may be omitted.

[0014] In this specification and drawings, the same reference numerals are used to collectively refer to the same or similar components, and a hyphen and a number are added after the reference numerals to refer to them individually.

[0015] In this specification, the letters "first," "second," or "third" attached to each component are convenient labels used to distinguish each component, and have no other meaning unless otherwise specified.

[0016] In the following description, for convenience of explanation, terms indicating directions such as "up" and "down" may be used. The direction in which gravity acts on the stage is "down" and the opposite direction is "up."

[0017] 1. First Embodiment A stage 100 according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 9 as an example of a component of a semiconductor manufacturing apparatus.

[0018] [1-1. Overview of the Stage] An overview of the stage 100 will be described with reference to Figures 1 to 3, 5, and 6. Figure 1 is a perspective view showing the configuration of the stage 100. Figure 2 is a schematic diagram showing a cross section of the stage 100. Figure 3 is a schematic diagram showing an enlarged cross section of the periphery of a corner 101 of the stage 100. Figure 4 is a schematic diagram showing an enlarged cross section of the periphery of a corner 101 of a conventional stage. Figures 5 and 6 are schematic diagrams showing an enlarged cross section of the periphery of a space 160.

[0019] The stage 100 includes a laminated substrate 110 and an insulating film 150 .

[0020] The laminated substrate 110 includes a first substrate 120, a second substrate 140, a space 160, and a through-hole 180. As an optional configuration, the laminated substrate 110 may include an opening 170 or may include a through-hole 180. For example, the first substrate 120 and the second substrate 140 are joined by brazing. Note that the joining method is not limited to brazing. Furthermore, as an example, the laminated substrate 110 includes a configuration in which two substrates (the first substrate 120 and the second substrate 140) are joined together, but the laminated substrate 110 may also include a configuration in which three or more substrates are joined together.

[0021] The first substrate 120 includes a first surface 122, a second surface 124, and a third surface 126. The third surface 126 is provided between the first surface 122 and the second surface 124, and is continuous with the first surface 122 and the second surface 124. For example, the third surface 126 has a C-chamfered shape. The third surface 126 may also have an R-chamfered shape having a curvature. The second substrate 140 includes a fourth surface 142.

[0022] The space 160 is formed in one or both of the first substrate 120 and the second substrate 140. The space 160 may be a flow path for circulating a medium within the stage 100, or may be a groove in which a heat source is disposed within the stage 100. The space 160 may also be called a hole, a communication hole, or the like. For example, the medium and the heat source are used to control the temperature of a substrate placed on the stage 100. For example, the medium is a liquid such as water, an alcohol such as isopropanol or ethylene glycol, or silicone oil. The medium may be used to cool the stage 100 or to heat the stage 100. For example, the heat source is a sheathed heater. A sheathed heater has the function of generating heat when electricity is passed through it.

[0023] Furthermore, for example, among the spaces 160, the spaces 160a corresponding to the inflow or outflow of a medium or the insertion or extraction holes of a heat source include inflow and outflow holes 160e. The cross section of the stage 100 shown in FIG. 2 shows one space 160a including the inflow and outflow hole 160e, but the space 160a shown in FIG. 2 is merely an example and is not limited to the example shown in FIG. 2. Furthermore, the inflow and outflow hole 160e shown in FIG. 2 is provided in the second substrate 140, but the position of the inflow and outflow hole 160e shown in FIG. 2 is merely an example and is not limited to the example shown in FIG. 2. For example, the stage 100 includes two spaces 160a: the space 160a including the inflow and outflow hole 160e corresponding to an inlet (e.g., an inflow hole or an insertion hole), and the space 160a including the inflow and outflow hole 160e corresponding to an outlet (e.g., an outlet hole or an extraction hole). The number of spaces 160a including the inlet / outlet holes 160e is not limited to two, and may be three or more, or may be one (for example, a configuration in which one end and the other end of the heat source are provided in the same inlet / outlet hole). Furthermore, the spaces 160a including the inlet / outlet holes 160e may be provided in any location based on the application or specifications of the stage 100.

[0024] The opening 170 is a hole for installing a temperature sensor on the bottom side (fourth surface 142 side) of the laminated substrate 110. For example, the temperature sensor is a thermocouple. Furthermore, although the stage 100 shown in FIG. 2 includes one opening 170, the stage 100 may include multiple openings 170. By including multiple openings 170 in the stage 100, the film processing apparatus 200 ( FIG. 10 ) including the stage 100 can obtain detailed temperature distribution of the substrate, thereby enabling more precise control of the substrate temperature.

[0025] For example, the through-hole 180 functions as a flow path for flowing gas through the gap between the stage 100 and a substrate placed on the stage 100. For example, the gas is a gas with high thermal conductivity, such as helium. Although FIG. 2 shows only one through-hole 180, the stage 100 may include multiple through-holes 180. By including multiple through-holes 180 in the stage 100, a film processing apparatus 200 ( FIG. 10 ) including the stage 100 can efficiently transfer thermal energy to the substrate. Note that, as an example, the through-hole 180 functions as a flow path for flowing gas through the gap between the stage 100 and a substrate placed on the stage 100. However, depending on the application and specifications of the stage 100, the through-hole 180 may also be a flow path for flowing a solvent or a hole for installing a heat source. Furthermore, an example of stage 100 has been shown in which the flow path for gas flow, the flow path for solvent flow, or the structure for installing a heat source is through-hole 180, but the flow path for gas flow, the flow path for solvent flow, or the structure for installing a heat source is not limited to through-hole 180, and a structure other than through-hole may be selected depending on the application and specifications of stage 100.

[0026] The insulating film 150 is provided so as to cover and be in contact with the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142. The insulating film 150 is also provided on the inner wall 172 of the opening 170, the inner wall 182 of the through-hole 180, and the inner wall 162 of the space 160. The insulating film 150 is also provided on the inner walls 162 and 162e of the space 160a including the inlet / outlet hole 160e. That is, the insulating film 150 is provided not only on the surfaces of the layered base material 110, such as the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142, but also on the inner walls, bottoms, or side walls of the spaces, and the inner walls of flow channels or the like whose surfaces are not exposed.

[0027] The material used for the first base material 120 and the second base material 140 is metal. For example, the material used for the first base material 120 and the second base material 140 is aluminum alloy (A6061).

[0028] For example, the material used for the insulating film 150 may be a material that reacts with the materials used for the first base material 120 and the second base material 140 and is capable of satisfying the desired insulating properties, the desired withstand voltage characteristics, the desired corrosion resistance, or the desired plasma resistance. For example, the material used for the insulating film 150 of the stage 100 includes aluminum hydroxide. For example, aluminum hydroxide includes aluminum oxide hydroxide (AlO(OH)), which is a metal hydroxide oxide. Aluminum oxide hydroxide (AlO(OH)) is known as boehmite.

[0029] 3 to 6, the configurations around the corner 101 of the stage 100 and the configurations around the space 160 of the stage 100 will be described. Configurations that are the same as or similar to those in FIGS. 1 and 2 will be described as necessary.

[0030] As described in "1-1", the insulating film 150 containing boehmite is provided so as to cover and be in contact with the first surface 122, the second surface 124, the third surface 126, and the fourth surface 142. As shown in more detail in Fig. 3, the insulating film 150 is provided at a corner 101 (corner 101c-1) formed between the first surface 122 and the third surface 126, and at a corner 101 (corner 101c-2) formed between the first surface 122 and the third surface 126. Although not shown, a boundary region is formed between the mutually adjacent surfaces of the first base material 120 and the mutually adjacent surfaces of the second base material 140.

[0031] 5 , the insulating film 150 is provided so as to cover and be in contact with the inner walls 162 (inner walls 162r, 162l, 162u, and 162d) of the space 160. The first base material 120 includes the inner walls 162r, 162l, and 162u, and the second base material 140 includes the inner wall 162d. The boundary region 103 of the space 160 includes the boundary between the first base material 120 and the second base material 140, the end of the bonding surface 144 between the first base material 120 and the second base material 140 on the space 160 side, and the boundary between the inner walls 162r and 162d. Thus, the insulating film 150 is provided so as to cover and be in contact with the boundary region 103. Although not shown, the boundary between the inner wall 162l and the inner wall 162d is also the boundary between the first base material 120 and the second base material 140, and is the boundary region 103 of the space 160.

[0032] 6 , the space 160 may be formed by joining a groove 160f formed in the first base material 120 and a groove 160s formed in the second base material 140. The insulating film 150 is provided to cover and contact the inner wall 162 (inner walls 162r, 162l, 162u, and 162d) of the space 160. The boundary region 105 includes the boundary of the space 160 between the first base material 120 and the second base material 140. Specifically, the boundary region 105 includes the end of the joining surface 146 between the first base material 120 and the second base material 140 on the space 160 side, and includes the boundary between the inner wall 162r and the inner wall 162d. Although not shown, the inner wall 162l, like the inner wall 162r, includes the boundary region 105 between the first base material 120 and the second base material 140. Therefore, the insulating film 150 is provided so as to cover and contact the boundary region 105 .

[0033] For example, the thickness of the laminated base material 110 (first base material 120 and second base material 140) is approximately 30 mm. Furthermore, for example, the thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 are 0.1 μm or more and 20 μm or less. The thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 of the stage 100 are approximately 5 μm. The thicknesses Tu, Tc, Ts, Tff, and Tsf of the insulating film 150 are sufficiently thinner than the thickness of the laminated base material 110 (first base material 120 and second base material 140).

[0034] Here, a conventional stage will be described with reference to Figure 4. For example, the first base material 120 included in the conventional stage includes anodized aluminum 150p, which is formed on the first surface 122, corner 101c-1, second surface 124, corner 101c-2, and third surface 126. The anodized aluminum 150p also includes cracks (gaps) 105p. Because the anodized aluminum 150p is formed in a direction perpendicular to each surface, the cracks 105p are likely to form in the corners 101p (corners).

[0035] The insulating film 150 containing boehmite has high continuity and high adhesion with the first surface 122, the corner 101c-1, the second surface 124, the corner 101c-2, and the third surface 126. As a result, the insulating film 150 is less likely to have gaps, such as cracks, formed on the first surface 122, the corner 101c-1, the second surface 124, the corner 101c-2, and the third surface 126. Therefore, the laminated base material 110 (first base material 120 and second base material 140) is covered by the insulating film 150 and is not exposed, and therefore the insulating properties of the laminated base material 110 are higher than those of a base material that includes cracks (gaps).

[0036] The boehmite-containing insulating film 150 is also formed in the boundary regions 103 and 105. That is, the boehmite-containing insulating film 150 can sufficiently cover the boundary between the substrates. Even if the boundary regions 103 and 105 include a misalignment at the bonding between the first substrate 120 and the second substrate 140, for example, the boehmite-containing insulating film 150 can be formed (deposited) to reflect the misalignment. That is, the boehmite-containing insulating film 150 can be formed to sufficiently cover the misalignment at the time of bonding the substrates. Therefore, the boehmite-containing insulating film 150 has high coverage performance for the layered substrate 110 (the first substrate 120 and the second substrate 140).

[0037] Here, as an example of measurement results, the measurement results of the breakdown voltage and surface roughness of the insulating film 150 will be described with reference to Tables 1 and 2. In the sample used for the measurement, the insulating film 150 containing boehmite was formed on a substrate based on an aluminum alloy (A6061). In the conventional sample, an insulating film containing alumite was formed on a substrate based on an aluminum alloy (A6061). As shown in Table 1, the breakdown voltage of the insulating film 150 containing boehmite is more than five times that of the conventional example (insulating film containing alumite). This demonstrates an improvement in the withstand voltage of the insulating film 150 containing boehmite. Furthermore, as shown in Table 2, the surface roughness of the insulating film 150 containing boehmite is approximately one-quarter that of the conventional example (insulating film containing alumite). This demonstrates an improvement in the uniformity or flatness of the surface of the insulating film 150 containing boehmite.

[0038]

[0039]

[0040] As an example of measurement results, Table 3 will be used to explain the dependence of the breakdown voltage and surface roughness of the insulating film 150 on the fabrication temperature (set temperature). For the sample in Example 1 used for the measurements, a boehmite-containing insulating film 150 was formed on a substrate made of an aluminum alloy (A6061) by a water vapor process with a set temperature of 200°C and a set heating time of 24 hours. The samples in Examples 2 and 3 used for the measurements were different in set temperature from the sample in Example 1, but were otherwise similar to the sample in Example 1. Specifically, the set temperatures for the samples in Examples 2 and 3 used for the measurements were 240°C and 280°C, respectively. As shown in Table 3, the higher the fabrication temperature, the higher the withstand voltage (breakdown voltage), and the lower the fabrication temperature, the more uniform the surface tends to be. The surface roughness of the insulating film 150 shown in Table 3 is recognized to be improved over the surface roughness of the conventional example (insulating film containing alumite), and the withstand voltage (breakdown voltage) of the insulating film 150 shown in Table 3 is recognized to be improved over the breakdown voltage of the conventional example (insulating film containing alumite) when the film thickness is taken into consideration.

[0041]

[0042] As described above, the stage 100 includes the first surface 122, the corner 101c-1, the second surface 124, the corner 101c-2, and the third surface 126, on which the insulating film 150 containing boehmite is densely formed, the space 160, the through-hole 180, and the opening 170. The stage 100 also includes boundary regions 103 and 105 in which the insulating film 150 containing boehmite is densely formed. That is, the surface of the layered substrate 110 is densely covered with the insulating film 150 containing boehmite and not containing cracks (gaps), thereby suppressing exposure of the layered substrate 110 (the first substrate 120 and the second substrate 140). As a result, the insulating properties, withstand voltage characteristics, corrosion resistance, and plasma resistance of the stage 100 are improved. Furthermore, the insulating properties, withstand voltage characteristics, corrosion resistance, and plasma resistance of the misaligned joint between the first substrate 120 and the second substrate 140 are improved. Furthermore, the high flatness or planarity of the insulating film 150 increases the contact area between the insulating film 150 and the laminated substrate 110. As a result, when the laminated substrate 110 is heated or cooled, the thermal conductivity from the laminated substrate 110 to the insulating film 150 via the stage 100 is improved.

[0043] [1-3. Fabrication of Stage 100] A method for fabricating the stage 100 will be described with reference to Figures 7 to 9. Figure 7 is a schematic cross-sectional view showing an outline of a film formation apparatus 300 for explaining the method for fabricating the stage 100. Figure 8 is a flowchart showing the method for fabricating the stage 100. Figure 9 is a schematic cross-sectional view showing an outline of a film formation apparatus 300 for explaining the method for fabricating the stage 100. Configurations that are the same as or similar to those in Figures 1 to 6 will be described as necessary.

[0044] First, the configuration of the film forming apparatus 300 will be described with reference to Fig. 7. The film forming apparatus 300 includes a first chamber 310, a second chamber 340, and a control circuit 360.

[0045] The first chamber 310 provides a space for heating or pressurizing the second chamber 340. Specifically, the first chamber 310 includes a lid 312, a container 314, an exhaust device 324, an introduction pipe 326, a valve 328, a mounting table 320, and a heater 322. The first chamber 310 also includes an upper space 316 above the mounting table 320 and a lower space 318 below the mounting table. The lid 312 is attached to the container 314 in an openable and closable manner, making the first chamber 310 sealable. An exhaust device 324 is connected to the container 314. For example, the exhaust device 324 can exhaust gases such as air and water vapor from the upper space 316 to create a reduced-pressure atmosphere inside the first chamber 310. An introduction pipe 326 is attached to the container 314. The introduction pipe 326 can introduce gas into the upper space 316 via a valve 328. For example, a gas can be introduced into the upper space 316 to create a high-pressure atmosphere in the upper space 316. The mounting table 320 is attached to the container 314, separates the space within the container 314 into the upper space 316 and the lower space 318, and is configured to allow a second chamber 340 to be placed therein. The heater 322 is placed in the lower space 318.

[0046] The second chamber 340 provides a space for forming a predetermined film on the stage 100. Specifically, the second chamber 340 includes a lid 342, a container 344, a mounting table 350, and an exhaust device 352. The second chamber 340 also includes a space 346. The lid 342 is attached to the container 344 in an openable and closable manner, making the second chamber 340 airtight. The space 346 is formed when the lid 342 contacts the container 344. The exhaust device 352 is connected to the container 344. For example, the exhaust device 352 can exhaust air, water vapor, etc. from the space 346 to create a reduced-pressure atmosphere within the space 346. The mounting table 350 is installed in the space 346. The mounting table 350 includes a mesh or lattice structure. When forming the insulating film 150, the layered substrate 110 is placed on the mounting table 350, and water or an aqueous solution is supplied to the space 346. For example, the method for fabricating the stage 100 includes supplying pure water 354 , which is an example of water or an aqueous solution, into the space 346 .

[0047] The water or aqueous solution may also contain an additive. For example, the additive may be a surfactant, triethanolamine, or the like. For example, if the method for producing the stage 100 includes supplying water containing a surfactant to the space 346, the surfactant reduces the surface tension of the water, allowing the boehmite-containing insulating film 150 to be uniformly formed on the layered substrate 110. For example, if the method for producing the stage 100 includes supplying water containing triethanolamine to the space 346, the pH of the water is maintained weakly alkaline, allowing the boehmite-containing insulating film 150 to be formed on the layered substrate 110 more quickly than in a production method that does not include triethanolamine.

[0048] Although not shown, the second chamber 340 may include a water or aqueous solution supply pipe capable of supplying water or aqueous solution to the space 346 via the first chamber 310, and a valve connected to the supply pipe. When the valve is opened, the water or aqueous solution is supplied to the space 346 via the first chamber 310, and when the valve is closed, the supply of water or aqueous solution to the space 346 is stopped. Closing the valve can prevent the water or aqueous solution from flowing back into the supply pipe.

[0049] Furthermore, although not shown, the second chamber 340 may include a steam spraying device equipped with a steam spray pipe capable of spraying and supplying water vapor to the space 346 via the first chamber 310. Alternatively, high-pressure steam generated in a separate facility may be introduced directly without passing through the first chamber 310. The steam spraying device may include a valve connected to the steam spray pipe. Similar to the water or aqueous solution supply pipe, when the valve is opened, water vapor is supplied to the space 346 via the first chamber 310, and when the valve is closed, the supply of water vapor to the space 346 is stopped. Closing the valve can prevent water vapor from flowing back into the steam spray pipe.

[0050] For example, the control circuit 360 includes a CPU, memory, a relay circuit, a timer, and the like. For example, a user can operate the control circuit 360 to set the temperature, heating time, pressure, pressurization time, or depressurization time of the first chamber 310 or the second chamber 340. The control circuit 360 can control the first chamber 310 or the second chamber 340 based on the settings. The control circuit 360 is connected to the heater 322. The control circuit 360 can control the heat generation of the heater 322 based on the set temperature and heating time. The control circuit 360 controls the heater 322 to heat the first chamber 310. Although not shown, pressure gauges and thermocouples are installed in the first chamber 310 and the second chamber 340 to monitor the pressure and temperature in the first chamber 310 and the second chamber 340. The pressure gauges and thermocouples are connected to the control circuit 360, and the control circuit 360 can monitor and store the pressure and temperature.

[0051] Furthermore, although not shown, a control circuit 360 may be connected to the exhaust device 324 and the exhaust device 352 and automatically control the opening and closing of valves included in the exhaust device 324 and the exhaust device 352. For example, the control circuit 360 can control the opening and closing of the valves and the pressure in the first chamber 310 or the second chamber 340 based on a set pressure and pressurization time.

[0052] The film forming apparatus 300 includes one control circuit 360, but the number of control circuits 360 is not limited to one. For example, the film forming apparatus 300 may include three control circuits that respectively control the heater 322, the exhaust device 324, and the exhaust device 352. By controlling the heater 322, the exhaust device 324, and the exhaust device 352 with different control circuits, it is possible to set the temperature, heating time, pressure, pressurization time, depressurization time, and the like more precisely.

[0053] Furthermore, although the film formation apparatus 300 includes a first chamber 310 and a second chamber 340, the number of chambers is not limited to two. For example, the film formation apparatus 300 may have only one chamber (e.g., the first chamber 310) as long as the film formation apparatus 300 is an apparatus including a configuration capable of forming the insulating film 150 containing boehmite on the layered substrate 110 by a water vapor process described below. The method of manufacturing the stage 100 when the film formation apparatus 300 includes one chamber has fewer steps than when the film formation apparatus 300 includes two chambers. Therefore, when the film formation apparatus 300 includes one chamber, the method of manufacturing the stage 100 can be simplified compared to when the film formation apparatus 300 includes two chambers.

[0054] 7 to 9, a method for manufacturing the stage 100 will be described. For example, the method for manufacturing the stage 100 includes steps S110 to S130.

[0055] When the fabrication of the stage 100 starts, the layered base material 110 is placed on the mounting table 350 (step S110). Also in step S110, pure water 354 is supplied to the space 346. The pure water 354 is supplied to the space 346 to such an extent that it does not come into contact with the layered base material 110. Also in step S110, the second chamber 340 and the first chamber 310 are sealed.

[0056] Next, the first chamber 310, the second chamber 340, or the interior of the first chamber 310 or the second chamber 340 is heated and pressurized (step S120). For example, the control circuit 360 controls the heater 322 based on the set temperature, and the first chamber 310 or the second chamber 340 is heated. The pure water 354 in the second chamber 340 is heated and boiled, and water vapor 356 ( FIG. 9 ) is generated in the space 346. For example, at this time, the valves (not shown) of the exhaust devices 352 and 324 are closed to promote pressurization in the second chamber 340. When the pressure and temperature of the second chamber 340 (space 346) reach the set pressure and temperature, the control circuit 360 controls the pressure and temperature of the first chamber 310 or the second chamber 340 based on a pressure gauge, a thermocouple, etc., to maintain the set pressure and temperature.

[0057] Here, for example, the set temperature may be 130°C or higher and 320°C or lower, preferably 250°C or higher and 300°C or lower, the set heating time may be 10 minutes or higher and 72 hours or lower, and the set pressure may be 0.2 MPa or higher and 12.4 MPa or lower. In one example of a method for producing the stage 100, the set temperature is 280°C, the set heating time is 24 hours, and the set pressure is 7 MPa. For example, the method for producing the stage 100 may include heating pure water to form a boehmite film with good quality over a long period of time, or may include introducing preheated water vapor into the second chamber 340 to form a boehmite film with good quality in a short period of time.

[0058] Next, an insulating film 150 containing boehmite is formed on the laminated substrate 110 (the first substrate 120 and the second substrate 140) (step S130). For example, region 370 shown in FIG. 9 is an enlarged view of a corner of the first substrate 120. Region 380 shown in FIG. 9 is an enlarged view of the space 160. As shown in regions 370 and 380, water vapor 356 fills the peripheries of the first surface 122, the second surface 124, the third surface 126, and the inner wall 162 (inner walls 162r, 162l, 162u, and 162d) of the space 160. Furthermore, the water vapor reacts with aluminum on each surface, producing an insulating film 150 containing boehmite (aluminum hydroxide oxide) on each surface (see FIGS. 3 and 5).

[0059] Step S130 includes forming an insulating film 150 containing boehmite on the fourth surface 142. Because the mounting table 350 has a mesh or lattice structure, water vapor 356 can enter between the fourth surface 142 (the surface in contact with the mounting table 350) of the second base material 140 and the mounting table 350. Thus, the insulating film 150 containing boehmite is formed on the fourth surface 142.

[0060] In this way, the stage 100 is manufactured. The control circuit 360 controls the heater 322 and the exhaust devices 352 and 324 based on the set heating time, pressurization time, or depressurization time. For example, when the temperature and pressure in the first chamber 310 and the second chamber 340 return to near steady states, the manufacturing of the stage 100 is completed.

[0061] As described above, by producing the stage 100 using the production method, the surface of the layered substrate 110 can be densely covered with the insulating film 150 that contains boehmite and does not contain cracks (gaps). The production method of the stage 100 includes using water vapor to form the insulating film 150 that contains boehmite and does not contain cracks (gaps) on the layered substrate 110. The production method of the stage 100 is sometimes referred to as a water vapor process.

[0062] For example, the anodized aluminum stage 150p in the conventional example described with reference to Figure 4 is formed using acid, which requires the discharge of carbon dioxide and the disposal of waste liquid, making it difficult to achieve a clean manufacturing process for forming the anodized aluminum stage 150p. Also, it is difficult to form the anodized aluminum stage 150p in the conventional example on the inner walls and side walls of narrow spaces such as the space 160, the through-hole 180 (Figure 2) and the opening 170 (Figure 2), or on the inner walls of closed spaces.

[0063] On the other hand, the method for manufacturing the stage 100 uses water vapor, which allows for a clean manufacturing process.

[0064] Furthermore, because the method for fabricating the stage 100 uses water vapor, the water vapor can enter the spaces 160, the through-holes 180 ( FIG. 2 ), the openings 170 ( FIG. 2 ), and the like. As a result, the method for fabricating the stage 100 includes forming the insulating film 150 of the stage 100 in spaces, grooves, holes, through-holes, and the like where it has been difficult to form anodized aluminum, as in the conventional example. Therefore, the insulating film 150 containing boehmite has high continuity and adhesion with the spaces 160, the through-holes 180, and the openings 170, and cracks (gaps) are less likely to form in the spaces 160, the through-holes 180, and the openings 170.

[0065] Furthermore, the insulating film 150, which contains boehmite but does not contain cracks (gaps), may be polished by blasting. The insulating film 150 is planarized by being polished. For example, planarization increases the contact area between the stage 100 and a substrate (such as a silicon wafer or semiconductor wafer) when the substrate is placed on the stage 100. As a result, thermal conductivity from the stage 100 to the substrate is improved.

[0066] [2. Second Embodiment] The configuration of a semiconductor manufacturing apparatus according to a second embodiment of the present invention will be described with reference to Figure 10. The semiconductor manufacturing apparatus includes a stage 100. For example, the semiconductor manufacturing apparatus is a film processing apparatus 200. The film processing apparatus 200 is a so-called etching apparatus. Note that the configuration of the film processing apparatus 200 described with reference to Figure 10 is one example, and the configuration of the film processing apparatus 200 is not limited to the configuration shown in Figure 10. Furthermore, the film processing apparatus 200 is not limited to an etching apparatus. In the description of the film processing apparatus 200, configurations that are the same as or similar to the configurations described with reference to Figures 1 to 9 will be described as necessary.

[0067] 10 is a schematic cross-sectional view of a film processing apparatus 200. The film processing apparatus 200 can perform dry etching on various films. The film processing apparatus 200 includes a chamber 202. The chamber 202 provides a space in which etching is performed on a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0068] An exhaust device 204 is connected to the chamber 202. The exhaust device 204 can set the inside of the chamber 202 to a reduced pressure atmosphere. An inlet pipe 206 is provided in the chamber 202. The inlet pipe 206 can introduce a reactive gas for etching into the chamber 202 via a valve 208. For example, the reactive gas may be carbon tetrafluoride (CF ４ ), octafluorocyclobutane (c-C ４ F ８ ), decafluorocyclopentane (c-C ５ F １０ ), hexafluorobutadiene (C ４ F ６) or other fluorine-containing organic compounds. As an optional configuration, a helium inlet pipe may be provided in the chamber 202. For example, the helium inlet pipe can allow helium gas to flow into the gap between the stage 100 and the substrate placed on the stage 100 via the through-hole 180 described in "1-1." As a result, the film processing apparatus 200 including the helium inlet pipe can efficiently transfer the thermal energy of the stage 100 to the substrate.

[0069] A microwave source 212 is provided above the chamber 202 via a waveguide 210. The microwave source 212 includes an antenna for supplying microwaves. For example, the microwave source 212 outputs high frequencies such as 2.45 GHz microwaves or 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 212 propagate to the top of the chamber 202 via the waveguide 210 and are introduced into the chamber 202 through a window 214 made of quartz, ceramic, or the like. The reactive gas is converted into plasma by the microwaves, and the film is etched by electrons, ions, radicals, and the like contained in the plasma.

[0070] A stage 100 for placing a substrate is provided at the bottom of the chamber 202. A power supply 224 is connected to the stage 100. A voltage equivalent to high-frequency power is applied to the stage 100, and a microwave-generated electric field is formed perpendicular to the surface of the stage 100 and the surface of the substrate. Magnets 216, 218, and 220 are provided on the top or side of the chamber 202. The magnets 216, 218, and 220 may be permanent magnets or electromagnets having electromagnetic coils. The magnets 216, 218, and 220 form a magnetic field component parallel to the stage 100 and the surface of the substrate. In cooperation with the microwave-generated electric field, electrons in the plasma are subjected to a Lorentz force, resonate, and are bound to the stage 100 and the surface of the substrate. As a result, high-density plasma is generated on the surface of the substrate.

[0071] For example, if the stage 100 is equipped with a sheathed heater, a heater power supply 230 that controls the sheathed heater is connected to the stage 100. As an optional configuration, a power supply 226 for an electrostatic chuck that secures the substrate to the stage 100, a temperature controller 228 that controls the temperature of a medium circulated inside the stage 100, and a rotation control device (not shown) that rotates the stage 100 may be connected to the stage 100. For example, by using the temperature controller 228, a temperature-controlled medium can be flowed into the space 160 to control the temperature of the stage 100.

[0072] The film processing apparatus 200 according to the second embodiment includes a stage 100. As a result, the film processing apparatus 200 can uniformly heat a substrate and precisely control the heating temperature. Consequently, by using the film processing apparatus 200, various films formed on a substrate can be uniformly etched. Furthermore, because the stage 100 has excellent insulating properties, the withstand voltage of the film processing apparatus 200 is improved with respect to the voltage applied to the substrate. As a result, by using the film processing apparatus 200, contacts with high aspect ratios can be formed on a substrate, and films with high aspect ratios can be formed on the substrate. Furthermore, the film processing apparatus 200, including the stage 100 with excellent insulating properties and withstand voltage, has excellent long-term reliability, allowing users to reduce the frequency of maintenance of the film processing apparatus 200.

[0073] 11 to 13, a shower head 400 according to a third embodiment of the present invention will be described as an example of a component of a semiconductor manufacturing apparatus. FIG. 11 is a perspective view showing the configuration of the shower head 400. FIG. 12 is a schematic diagram showing a cross section of the shower head 400 taken along line A1-A2. FIG. 13 is a schematic diagram showing a cross section of the shower head 400 taken along line B1-B2. Configurations that are the same as or similar to those in FIGS. 1 to 10 will be described as necessary.

[0074] For example, the showerhead 400 is a semiconductor manufacturing component for injecting process gas into the interior of a semiconductor manufacturing device.

[0075] 11 to 13, the shower head 400 includes a layered substrate 405 and an insulating film 150. The layered substrate 405 includes a stacked configuration of a first substrate 410, a second substrate 420, and a third substrate 430. For example, the first substrate 410, the second substrate 420, and the third substrate 430 are bonded by diffusion bonding.

[0076] As shown in Figures 12 and 13, the first base material 410 includes a first surface 415a, a second surface 415b opposite the first surface 415a, a third surface 415c, and a fourth surface 415d. The fourth surface 415d is continuous with the first surface 415a and the third surface 415c, and the third surface 415c is in contact with the second surface 415b. For example, the fourth surface 415d has a C-chamfered shape. The fourth surface 415d may also have an R-chamfered shape with a curvature. Specifically, the fourth surface 415d has a configuration similar to that of the third surface 126 according to the first embodiment (see Figures 2 and 3). Although detailed illustrations are omitted here, a corner similar to corner 101c-1 (see FIG. 3) according to the first embodiment is provided between first surface 415a and fourth surface 415d, and a corner similar to corner 101c-2 (see FIG. 3) according to the first embodiment is provided between fourth surface 415d and third surface 415c.

[0077] The first base material 410 also includes a plurality of inlet / outlet holes 411 and a plurality of spaces 413. The plurality of inlet / outlet holes 411 are opened from the first surface 415a, and the plurality of spaces 413 are in communication with the inlet / outlet holes 411. The plurality of spaces 413 include a space 413a and a plurality of spaces 413b formed to surround the space 413a. Although not shown, the spaces 413a and 413b have annular groove shapes. The space 413a and the space 413b are in communication within the first base material 410, and adjacent spaces 413b among the plurality of spaces 413b are in communication within the first base material 410. The plurality of inlet / outlet holes 411 penetrate from the first surface 415a to the second surface 415b via the plurality of spaces 413.

[0078] The second substrate 420 includes a first surface 425 a, a second surface 425 b opposite the first surface 425 a, and a third surface 425 c. The third surface 425 c contacts the first surface 425 a and the second surface 425 b. The first surface 425 a is bonded to the second surface 425 b.

[0079] The second substrate 420 also includes a plurality of inlet / outlet holes 421, a plurality of spaces 423, and an inlet / outlet hole 426. The plurality of inlet / outlet holes 421 are opened from the first surface 425a, the inlet / outlet holes 426 are opened from the second surface 425b, and the plurality of spaces 423 are connected to the inlet / outlet holes 421 and 426. Each of the plurality of inlet / outlet holes 421 is connected to a space 413b. Although not shown, the plurality of spaces 423 are radial grooves formed by the intersection of a plurality of linear grooves. A space 423 constituting one of the linear grooves connects the through holes 421a and 412b located furthest from each other. The plurality of inlet / outlet holes 421 are connected to the inlet / outlet hole 426 via a plurality of spaces 413.

[0080] The third base material 430 includes a first surface 435a, a second surface 435b opposite the first surface 435a, a third surface 435c, and a fourth surface 435d. The fourth surface 435d is continuous with the second surface 435b and the third surface 435c, and the third surface 435c contacts the first surface 435a. For example, the fourth surface 435d has a configuration similar to that of the fourth surface 415d and has a C-chamfered shape. The first surface 435a is bonded to the second surface 425b.

[0081] The third base material 430 also includes an inlet / outlet hole 431. The inlet / outlet hole 431 is opened so as to penetrate from the first surface 435a to the second surface 435b. The inlet / outlet hole 431 also communicates with the inlet / outlet hole 426.

[0082] Thus, the laminated base material 405 includes a configuration in which a plurality of inlet / outlet holes 411, a plurality of spaces 413, a plurality of inlet / outlet holes 421, a space 423, an inlet / outlet hole 426, and an inlet / outlet hole 431 are connected to each other. The plurality of inlet / outlet holes 411, the plurality of spaces 413, the plurality of inlet / outlet holes 421, the space 423, the inlet / outlet hole 426, and the inlet / outlet hole 431 form flow paths for flowing a medium into the showerhead 400. The spaces 413 and 423 may be referred to as holes, communication holes, etc., similar to the space 160. For example, the medium is a process gas.

[0083] The insulating film 150 is provided to cover and be in contact with the first surface 415a, the third surface 415c, the fourth surface 415d, the third surface 425c, the fourth surface 435d, the third surface 435c, and the second surface 435b. The insulating film 150 is also provided on the inner walls 412 of each of the plurality of inlet / outlet holes 411, the inner walls 414 (e.g., inner walls 414a and 414b) of each of the plurality of spaces 413, the inner walls 422 (e.g., inner walls 422a and 422b) of each of the plurality of inlet / outlet holes 421, the inner walls 424 of each of the plurality of spaces 423, the inner walls 427 of the inlet / outlet holes 426, and the inner walls 432 of the inlet / outlet holes 431. That is, the insulating film 150 is provided not only on the surfaces of the laminated substrate 405, such as the first surface 415a, the third surface 415c, the fourth surface 415d, the third surface 425c, the fourth surface 435d, the third surface 435c and the second surface 435b, but also on the inner walls of flow paths whose surfaces are not exposed, such as the inner walls of inlet / outlet holes and the inner walls of spaces.

[0084] Although not shown in the drawings, the plurality of spaces 413 and 423 include boundary regions similar to those of the space 160. For example, the boundary region of the space 413a may include the boundary between the first substrate 410 and the second base material 420, and the boundary between the end of the bonding surface between the first base material 410 and the second base material 420 on the space 413 side (the inner wall 414a and the first surface 425a).

[0085] The materials used for the first substrate 410 , the second substrate 420 and the third substrate 430 are similar to the materials used for the first substrate 120 and the second substrate 130 .

[0086] The insulating film 150 in the shower head 400 has the same configuration as the insulating film 150 in the stage 100. For example, the material used for the insulating film 150 in the shower head 400 is boehmite.

[0087] For example, the first base material 410, the second base material 420, and the third base material 430 are bonded by diffusion bonding after forming the spaces 413 and 423 and the inlet / outlet holes 411, 421, 426, and 431. After bonding, the insulating film 150 is formed on the bonding base material 405 by the fabrication method described in "1-3. Fabrication of the stage 100."

[0088] Note that, after forming the spaces 413 and 423 and the inlet / outlet holes 411, 421, 426, and 431 between the first base material 410, the second base material 420, and the third base material 430, the insulating film 150 may be formed by the manufacturing method described in "1-3. Manufacturing of stage 100" before bonding the first base material 410, the second base material 420, the first base material 425a, and the second base material 420, and the first base material 435a are polished and removed, and then the base materials are bonded.

[0089] Also, as an example, the laminated substrate 405 includes a configuration in which three substrates are bonded together, but the laminated substrate 405 may also include a configuration in which two substrates are bonded together, similar to the laminated substrate 110, or may include a configuration in which four or more substrates are bonded together.

[0090] Here, in the process of manufacturing a shower head, when drilling holes after bonding multiple substrates, chips may fall into the holes and grooves, or burrs may occur. For example, when a shower head manufactured in this manner is used, the chips or burrs may be released to the outside along with the reaction gas. As a result, a film formed using the shower head may cause film formation defects. On the other hand, the shower head 400 according to the third embodiment is manufactured by forming inlet / outlet holes and spaces in each substrate and then bonding the substrates by diffusion bonding, which makes it possible to suppress the generation of chips and burrs. As a result, the shower head 400 according to the third embodiment includes a configuration that can suppress the occurrence of film formation defects.

[0091] Furthermore, for example, the showerhead 400 described above can introduce a medium through the inlet / outlet hole 431, which is an inlet for the medium, circulate the medium through a flow path (such as spaces 413 and 423), and release the medium from multiple inlet / outlet holes 411, which are outlets for the medium.

[0092] As described above, the showerhead 400 includes a configuration in which the insulating film 150 is formed on the surface of the layered base material 405, the inner walls of the inlet / outlet holes in the layered base material 405, and the inner walls of the spaces. As a result, the showerhead 400 can achieve the same effects as the stage 100.

[0093] Incidentally, semiconductor manufacturing components such as the stage 100 and shower head 400 that include flow channels are sometimes called plates with flow channels.

[0094] 14, the configuration of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention will be described. The semiconductor manufacturing apparatus according to the fourth embodiment includes a stage 100 and a shower head 400. For example, the semiconductor manufacturing apparatus is a chemical vapor deposition (CVD) apparatus 500. The configuration of the CVD apparatus 500 described with reference to FIG. 14 is one example, and the configuration of the CVD apparatus 500 is not limited to the configuration shown in FIG. 14. In the description of the CVD apparatus 500, configurations that are the same as or similar to the configurations described with reference to FIGS. 1 to 13 will be described as necessary.

[0095] 14 is a schematic cross-sectional view of a CVD apparatus 500. The CVD apparatus 500 includes a chamber 502. The chamber 502 provides a space into which a process gas (also called a reactive gas) is introduced and in which the reactive gas is chemically reacted to chemically form various films on a substrate. The chamber 502 may have an insulating film 150 formed on its inner wall, similar to the stage 100 and the showerhead 400.

[0096] An exhaust device 504 is connected to the chamber 502. The exhaust device 504 can reduce the pressure inside the chamber 502. An inlet pipe 506 is provided in the chamber 502. The exhaust device 504 and the inlet pipe 506 may have an insulating film 150 formed on the inner wall of each pipe, similar to the stage 100 and the shower head 400. The shower head 400 is provided at the top of the chamber 502. The inlet pipe 506 can supply a reaction gas for film formation to the shower head 400 via a valve 508. The reaction gas is introduced through an inlet / outlet hole 431 of the shower head 400, which serves as a reaction gas inlet and is connected to the inlet / outlet pipe 506. The reaction gas flows through flow paths (inlet / outlet hole 426, space 423, inlet / outlet hole 421, space 413, etc.) in the shower head 400 and is released into the chamber 502 from multiple inlet / outlet holes 411, which serve as medium outlets. The reaction gas may be various gases depending on the film to be formed. The reaction gas may be at room temperature or may be a liquid. For example, the reaction gas may be silane, dichlorosilane, tetraethoxysilane, tungsten fluoride, trimethylaluminum, or the like. By using silane, dichlorosilane, tetraethoxysilane, or the like, a thin film of silicon, silicon oxide, silicon nitride, or the like can be formed. By using tungsten fluoride or trimethylaluminum, or the like, a thin film of a metal or metal oxide such as tungsten, aluminum, or aluminum oxide can be formed.

[0097] A stage 100 for supporting a substrate is provided at the bottom of the chamber 502. A high-frequency power supply 524 is connected to the stage 100 and the showerhead 400. For example, when a voltage corresponding to high-frequency power is applied between the stage 100 and the showerhead 400, an electric field due to microwaves is formed in a direction perpendicular to the surface of the stage 100 and the surface of the substrate (the side where the showerhead 400 is provided). For example, a magnet 520 is provided on the top or side of the chamber 502. In FIG. 14 , as an example, the magnet 520 is provided on the side of the chamber 502. The magnet 520 may be a permanent magnet or an electromagnet having an electromagnetic coil. For example, the magnet 520 forms a magnetic field component parallel to the stage 100 and the substrate surface. In cooperation with the electric field due to the microwaves, electrons in the plasma are subjected to a Lorentz force, resonate, and are bound to the stage 100 and the substrate surface. As a result, high-density plasma is generated on the substrate surface.

[0098] For example, if the stage 100 is equipped with a sheathed heater, a heater power supply 530 that controls the sheathed heater is connected to the stage 100. As an optional configuration, a power supply 526 for an electrostatic chuck that secures the substrate to the stage 100, a temperature controller 528 that controls the temperature of a medium flowing inside the stage 100, and a rotation control device (not shown) that rotates the stage 100 may be connected to the stage 100. For example, by using the temperature controller 528, a temperature-controlled medium can be flowed into the space 160 to control the temperature of the stage 100.

[0099] The CVD apparatus 500 according to the fourth embodiment includes a stage 100 and a shower head 400 covered with boehmite. The CVD apparatus 500 can uniformly heat a substrate, precisely control the heating temperature, and uniformly release a reaction gas into a chamber 502. As a result, various films can be uniformly formed on a substrate by using the CVD apparatus 500. Furthermore, because the stage 100 and the shower head 400 have excellent insulating properties, the CVD apparatus 500 has an improved withstand voltage against voltages applied to the stage 100, the shower head 400, and the substrate. Furthermore, the CVD apparatus 500, including the stage 100 and the shower head 400 with excellent insulating properties and withstand voltage, has excellent long-term reliability, allowing users to reduce the frequency of maintenance of the CVD apparatus 500.

[0100] The components of the semiconductor manufacturing apparatus, the method for manufacturing the components of the semiconductor manufacturing apparatus, and the respective configurations of the semiconductor manufacturing apparatus described above as embodiments of the present invention can be combined as appropriate as long as they are not mutually inconsistent. Furthermore, the stages, the method for manufacturing the stages, and the respective configurations of the semiconductor manufacturing apparatus described above as embodiments of the present invention can be interchanged as appropriate as long as they are not mutually inconsistent. Furthermore, even if a person skilled in the art adds, deletes, or modifies components as appropriate based on each embodiment, these additions, deletions, or design changes are included within the scope of the present invention as long as they maintain the gist of the present invention.

[0101] Furthermore, even if there are other effects and advantages different from those brought about by the above-mentioned embodiments, those that are clear from the description in this specification or that can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention.

[0102] 100: stage, 101: corner, 101c-1: corner, 101c-2: corner, 101p: corner, 103: boundary region, 105: boundary region, 105p: crack, 110: laminated base material, 120: first base material, 122: first surface, 124: second surface, 126: third surface, 140: second base material, 142: fourth surface, 144: bonding surface, 146: bonding surface, 150: insulating film, 150p: anodized aluminum, 160: space, 160a: space, 160e: inlet / outlet hole, 160f: groove, 160s: groove, 162: inner wall, 162d: inner wall, 162e: inner wall, 162l: inner wall, 162r: inner wall, 162u: inner wall, 170: aperture, 172: inner wall, 180: through-hole, 182: inner wall, 200: film processing device, 202: chamber, 204: exhaust device, 206: introduction pipe, 208: valve, 210: waveguide, 212: microwave source, 214: window, 216: magnet, 218: magnet, 220: magnet, 224: power supply, 226: power supply, 228: temperature controller, 230: heater power supply, 300: film forming device, 310: first chamber, 312: lid, 314: container, 316: upper space, 318: lower space, 320: mounting table, 322: heater, 324: exhaust device, 326: introduction pipe , 328: valve, 340: second chamber, 342: lid, 344: container, 346: space, 350: mounting table, 352: exhaust device, 354: pure water, 356: water vapor, 360: control circuit, 370: area, 380: area, 400: shower head, 405: laminated base material, 405: bonding base material, 410: first substrate, 410: first base material, 411: inlet / outlet hole, 412: inner wall, 412b: through hole, 413: space, 413a: space, 413b: space, 414: inner wall, 414a: inner wall, 414b: inner wall, 415a: first surface, 415b: second surface, 415c: third surface, 415 d: fourth surface, 420: second base material, 421: inlet / outlet hole, 421a: through hole, 422: inner wall, 422a: inner wall, 422b: inner wall, 423: space, 424: inner wall, 425a: first surface, 425b: second surface, 425c: third surface, 426: inlet / outlet hole, 427: inner wall, 430: third base material, 431: inlet / outlet hole, 432: inner wall, 435a: first surface, 435b: second surface, 435c: third surface, 435d: fourth surface, 500: CVD apparatus, 502: chamber, 504: exhaust device, 506: introduction pipe, 508: valve, 520: magnet, 524: high frequency power supply, 526: power supply,528: Temperature controller, 530: Heater power supply,

Claims

1. A component of a semiconductor manufacturing device, comprising: a substrate having a first surface and a second surface continuous with the first surface; and a film containing aluminum hydroxide provided continuously directly on the first surface and the second surface.

2. The component of claim 1, wherein the substrate comprises aluminum.

3. The component of semiconductor manufacturing equipment according to claim 1, wherein the substrate includes a space for allowing a medium to flow, and the film containing aluminum hydroxide is directly provided on the inner wall of the space.

4. The component for semiconductor manufacturing equipment according to claim 1, wherein the base material includes a space in which a heat source can be placed, and the film containing aluminum hydroxide is directly provided on the inner wall of the space.

5. The component for semiconductor manufacturing equipment according to claim 1, wherein the substrate further has a corner portion that is continuous with the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is provided directly on the corner portion.

6. A method for producing a component for semiconductor manufacturing equipment, comprising: placing a substrate having a first surface and a second surface continuous with the first surface in a chamber that can be heated and pressurized; supplying water or an aqueous solution into the chamber; heating and pressurizing the inside of the chamber to generate water vapor within the chamber; and forming a film containing aluminum hydroxide successively on the first surface and the second surface.

7. The method for fabricating a semiconductor manufacturing equipment component according to claim 6, wherein the substrate comprises aluminum.

8. The method for producing a component for semiconductor manufacturing equipment according to claim 6, wherein the substrate includes a space for allowing a medium to flow, and the method comprises forming a film containing the aluminum hydroxide on an inner wall of the space.

9. The method for producing a component for semiconductor manufacturing equipment according to claim 6, wherein the base material includes a space in which a heat source can be placed, and the method includes forming a film containing the aluminum hydroxide on an inner wall of the space.

10. The method for producing a component for semiconductor manufacturing equipment according to claim 6, wherein the substrate further has a corner portion that is continuous with the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is provided directly on the corner portion.

11. A method for manufacturing a component of a semiconductor manufacturing device, comprising: placing a substrate having a first surface and a second surface continuous with the first surface in a chamber that can be heated and pressurized; supplying water vapor into the chamber; heating and pressurizing the inside of the chamber; and forming a film containing aluminum hydroxide successively on the first surface and the second surface.

12. The method for fabricating a semiconductor manufacturing equipment component according to claim 11, wherein the substrate comprises aluminum.

13. The method for producing a component for semiconductor manufacturing equipment according to claim 11, wherein the substrate includes a space for allowing a medium to flow, and the method includes forming a film containing the aluminum hydroxide on an inner wall of the space.

14. The method for producing a component for semiconductor manufacturing equipment according to claim 11, wherein the base material includes a space in which a heat source can be placed, and the method includes forming a film containing the aluminum hydroxide on an inner wall of the space.

15. The method for producing a component for semiconductor manufacturing equipment according to claim 11, wherein the substrate further has a corner portion that is continuous with the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is provided directly on the corner portion.

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